HIRAI HIROHISA 平井悠久

… Alternative Names

平井悠久ヒライヒロヒサ

Less

Researcher Number	10828122
Other IDs
Affiliation (Current)	2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究員
Affiliation (based on the past Project Information) *help	2021 – 2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究員
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator パワーエレクトロニクス / 窒化ガリウム / トランジスタ / 省エネ / MOS Except Principal Investigator SiC / MOS界面 / 散乱 / 原子的平坦化 / パワーデバイス / MOSFET / 移動度

Development of lightly-tilted crystal face trench MOS channels toward the realization of ultra-low resistance GaN power devicesPrincipal Investigator
- Principal Investigator
  
  平井悠久
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減
- Principal Investigator
  
  染谷満
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2021

All Presentation

[Presentation] 4H-SiC非極性面上のMOS界面散乱に対する酸化プロセスの影響2021
- Author(s)
  染谷満、平井悠久、岡本光央、畠山哲夫、原田信介
- Organizer
  先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-21K04166

1. 染谷満 (60783644)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
2. 升本恵子 (60635324)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

HIRAI HIROHISA 平井悠久

平井悠久ヒライヒロヒサ

Research Projects

Research Products

Co-Researchers

Development of lightly-tilted crystal face trench MOS channels toward the realization of ultra-low resistance GaN power devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Presentation] 4H-SiC非極性面上のMOS界面散乱に対する酸化プロセスの影響2021

Author(s)

Organizer

Data Source

HIRAI HIROHISA 平井 悠久

平井 悠久 ヒライ ヒロヒサ

Research Projects

Research Products

Co-Researchers

Development of lightly-tilted crystal face trench MOS channels toward the realization of ultra-low resistance GaN power devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Presentation] 4H-SiC非極性面上のMOS界面散乱に対する酸化プロセスの影響2021

Author(s)

Organizer

Data Source

HIRAI HIROHISA 平井悠久

平井悠久ヒライヒロヒサ