Masumoto Keiko 升本恵子

Researcher Number	60635324
Affiliation (Current)	2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員
Affiliation (based on the past Project Information) *help	2018 – 2021: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator 炭化珪素 / エピタキシャル成長 / スパイラル成長 / on-axis / 炭化ケイ素 / 3Cインクルージョン / SiC / CVD / エピタキシャル / バルク … More Except Principal Investigator … More SiC / MOS界面 / 散乱 / 原子的平坦化 / パワーデバイス / MOSFET / 移動度 Less

SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減
- Principal Investigator
  
  染谷満
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Growth of SiC bulk crystals by chemical vapor depositionPrincipal Investigator
- Principal Investigator
  
  Masumoto Keiko
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2020 2019

All Journal Article Presentation

[Journal Article] Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers2020
- Author(s)
  Masumoto Keiko、Kojima Kazutoshi、Yamaguchi Hiroshi
- Journal Title
  
  Materials
  
  Volume: 13 Pages: 4818-4818
- DOI
  10.3390/ma13214818
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04252
[Presentation] 4H-SiC C面 on-axis基板上の厚膜エピタキシャル成長2019
- Author(s)
  升本恵子、児島一聡、奥村元
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04252
[Presentation] SiC on-axisエピタキシャル層を用いた自立基板の作製と3Cインクルージョン発生原因の評価2019
- Author(s)
  升本恵子、児島一聡、奥村元
- Organizer
  先進パワー半導体分科会　第６回講演会
- Data Source
  KAKENHI-PROJECT-18K04252

1. 染谷満 (60783644)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. 平井悠久 (10828122)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Masumoto Keiko 升本恵子

Research Projects

Research Products

Co-Researchers

SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Growth of SiC bulk crystals by chemical vapor depositionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers2020

Author(s)

Journal Title

DOI

Data Source

[Presentation] 4H-SiC C面 on-axis基板上の厚膜エピタキシャル成長2019

Author(s)

Organizer

Data Source

[Presentation] SiC on-axisエピタキシャル層を用いた自立基板の作製と3Cインクルージョン発生原因の評価2019

Author(s)

Organizer

Data Source

Masumoto Keiko 升本 恵子

Research Projects

Research Products

Co-Researchers

SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Growth of SiC bulk crystals by chemical vapor depositionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers2020

Author(s)

Journal Title

DOI

Data Source

[Presentation] 4H-SiC C面 on-axis基板上の厚膜エピタキシャル成長2019

Author(s)

Organizer

Data Source

[Presentation] SiC on-axisエピタキシャル層を用いた自立基板の作製と3Cインクルージョン発生原因の評価2019

Author(s)

Organizer

Data Source

Masumoto Keiko 升本恵子