YAMAGUCHI Masahito 山口雅史

… Alternative Names

山口雅史ヤマグチマサヒト

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Researcher Number	20273261
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Affiliation (based on the past Project Information) *help	2012: 名古屋大学, 大学院・工学研究科, 准教授 2011 – 2012: 名古屋大学, 工学(系)研究科(研究院), 准教授 2010 – 2011: 名古屋大学, 工学研究科, 准教授 2007 – 2009: Nagoya University, 大学院・工学研究科, 准教授 2006: 名古屋大学, 大学院工学研究科, 助教授 … More 2004 – 2005: 名古屋大学, 大学院・工学研究科, 助教授 2002 – 2004: 名古屋大学, 工学研究科, 助教授 2001: 名古屋大学, 工学研究科, 教授 1998 – 2001: 名古屋大学, 工学研究科, 助手 1995 – 1996: 名古屋大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Nanomaterials/Nanobioscience / Microdevices/Nanodevices Except Principal Investigator Applied materials science/Crystal engineering / Electronic materials/Electric materials / Science and Engineering / Energy engineering / Microdevices/Nanodevices / Electronic materials/Electric materials
Keywords	Principal Investigator GaAs / Weiss振動 / 電子線露光装置 / ポテンシャル変調 / 分子線エピタキシー法 / ファセット / MBE / VLS / ナノワイヤ / 無触媒 … More / 非対称三重量子井戸 / 光非線形 / 三準位共鳴 / ポンプ・プローブ法 / トンネル / フェムト秒レーザー / ライン&スペース構造 / フォトルミネッセンス / 磁気輸送特性 / ナノメートル / 二次元電子ガス / 表面プラズモン / 平面超格子構造 / ウェットケミカルエッチング / 単一量子井戸 / シュブニコフ・ド・ハース振動 / 再成長 / リッジ成長 / 平面超格子 / 電流磁気特性 / フーリエスペクトル / 結合量子ディスク / カソードルミネッセンス / 表面拡散 / 電子線露光法 / 量子井戸 / 立体量子井戸構造 / (111)Si / ウィスパリング・ギャラリー・モード / AlGaAs / マイクロワイヤ / InAs / 架橋 / V / III比 / フラックス量 / 拡散長 / 液滴 / 双晶 / InGaAs … More Except Principal Investigator トンネル効果 / フェムト秒分光 / GaN / 選択成長 / 結晶成長 / InGaN / 電子波干渉 / 二重量子井戸 / 量子準位共鳴 / 反交差現象 / 光変調 / 光変調器 / 結合量子井戸 / 光非線形性 / 窒化物半導体 / MOVPE / ファセット成長 / 光デバイス / 面間拡散 / 光導波路 / シリコン基板 / 量子細線 / ナノワイヤ / LED / ホトルミネッセンス / GaAs / PEDOT / 電子格子相互作用 / エネルギー緩和 / 界面凹凸散乱 / 波動関数の局在・非局在 / 非対称結合量子井戸 / 光非線刑性 / 光制御 / フェトム秒分光 / キャリア寿命 / 光吸収 / 光透過 / 量子閉込めシュタルク効果 / 多波光制御 / p-i構造 / ナノへテロ構造 / 不純物ドーピング / ナノヘテロ構造 / 時間分解分光 / Si基板 / 界面構造 / 電子線ホログラフィー / エネルギー効率利用 / 電気電子材料 / 薄膜物性 / エピタキシャル成長 / 可視長波長 LED / 圧力印加有機金属化合物気相成長法 / 加圧MOVPE / 緑色LED / 青色LED / 量子効率 / 可視長波長LED / 圧力印加MOVPE / 熱力学 / MBE / 半導体超微細化 / 半導体物性 / フォトルミネッセンス / STEM / 双晶 / PAMBE / 窒素ラジカル / 太陽電池 / PA MBE / 超格子 / 内部量子効率 / 微細構造 / 量子井戸 / 格子欠陥 / 傾斜基板 / ミネッセンス / フィールドエミッタ / TEM / カソードルミネッセンス / 励起子 / サブミクロン微細構造 / ナノメトール量子構造 / バンド端発光 / 格子歪み / III nitrides / selective growth / nano-structure / quantum well / defects / off axis substrate / luminescence / field emitter / イメージセンサ / 非線形デバイス / ポンプ・プローブ法 / 電子・正孔対 / 準位共鳴 / optical modulator / coupled quantum wells / tunneling / optical nonlinearity / femto-second spectroscopy / optical device / Quantum confined Stark effect / ヘテロエピタキシ / 選択成長法 / 表面拡散 / MOVPE法 / HVPE法 / 量子ドット / ダブルヘテロ構造 / 伝導性制御 / 三族窒化物 / 緩衝層 / 異種基板 / Hetero-epitaxy / Selective growth / Growth on facets / Surface diffusion / HVPE / Quantum dot / 有機EL / 表面状態 / 透明電極 / 導電性高分子 / 表面処理 / 分子配向 / イオン化ポテンシャル / 誘電性高分子 / 無機電極 / イオン化エネルギー / Organic Lighy-Emitting Diodes / Surface State / Transparent Electrode / Conducting Polymer / Surface Treatment / Molecular Orientation / Ionization Potential Less

Ｓｉ基板上ＧａＡｓ系三元混晶ナノワイヤの成長機構解明と欠陥抑制に関する研究Principal Investigator
- Principal Investigator
  
  山口雅史
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Nagoya University
Development of bridged nitride semiconductor nanowire LED on Si substrate
- Principal Investigator
  
  HONDA Yoshio
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Nagoya University
Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2011
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Growth of high-quality thick InGaN by raised-pressure MOVPE
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
MBE-VLS法によるシリコン基板上GaAs系ナノワイヤ構造の作製と評価Principal Investigator
- Principal Investigator
  
  山口雅史
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  Nagoya University
Creation of hybrid energy materials with highly ordered nano-structure
- Principal Investigator
  
  YOSHIDA Yutaka
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (S)
- Research Field
  
  Energy engineering
- Research Institution
  Nagoya University
Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substrate
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2004 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Development of Neo-Technology for Fabrication of Him Display Based on Organic light-Emitting Diodes
- Principal Investigator
  
  MORI Tatsuo
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
結合多重量子井戸構造による多波光制御に関する研究
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  2002
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
電子線露光法による極微細平面・立体量子構造の作製とその評価に関する研究Principal Investigator
- Principal Investigator
  
  山口雅史
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
結合多重量子井戸構造による多波光制御に関する研究
- Principal Investigator
  
  沢木宣彦
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATE
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
極短周期GaAs系平面超格子構造における量子輸送現象に関する研究Principal Investigator
- Principal Investigator
  
  山口雅史
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
電子線露光装置を用いた化合物半導体における平面超格子構造作製に関する研究Principal Investigator
- Principal Investigator
  
  山口雅史
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Selective Growth of GaN pyramids and study of their optical and electronic properties
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
Non-linear optical devices utilizing triply coupled asymmetric GaAs quantum wells
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
二重量子井戸構造における電子波干渉効果
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
結合三重量子井戸構造における光非線形性Principal Investigator
- Principal Investigator
  
  山口雅史
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
二重量子井戸構造における電子波干渉効果
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University

All 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004

All Journal Article Presentation Book

[Book] ナノワイヤ最新技術の基礎と応用展開2013
- Author(s)
  福井孝志監修，7章：山口雅史
- Total Pages
  241
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-23510148
[Journal Article] Stacking faults and luminescence property of In- GaN nanowires2013
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Stacking 10 nm図 4:STEM 観察による InGaN ナノワイヤにおける双晶図 5 :InGaN ナノワイヤにおける双晶密度と積分 PL 強度の関係1011021034 1055 1056 1057 1058 105Integrated PL intensity (a.u.)Density of stacking faults (/cm)図 6:HOPG 基板上 GaN ナノワイヤ1μm faults and luminescence property of In- GaN nanowires2013
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] GaN nanowires grown on a graphite substrate by RF-MBE2013
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] GaN nanowires grown on a graphite substrate by RF-MBE2013
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Thermoelectric Power Measurement of Catalyst-free Si-doped GaAs Nanowires2012
- Author(s)
  M. Yamaguchi, J.H. Paek, and H. Amano
- Journal Title
  
  MRS Proceedings
  
  Volume: 1439 Pages: 83-87
- DOI
  10.1557/opl.2012.1326
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23510148
[Journal Article] Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate2012
- Author(s)
  M. Yamaguchi, J.H. Paek, and H. Amano
- Journal Title
  
  Nanoscale Research Lett.
  
  Volume: 7
- DOI
  10.1186/1556-276x-7-558
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23510148
[Journal Article] Growth of InGaN Nanowires on a (111)Si Substrate by RF-MBE2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  phys. stat. sol. (c)
  
  Volume: 9 Pages: 646-649
- DOI
  10.1002/pssc.201100446
- NAID
  110008726018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  phys. stat. sol
  
  Volume: 9 Pages: 646-649
- NAID
  110008726018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Spontaneous formation of highly regular superlattice structure in InGa N epilayers grown by molecular beam epitaxy2011
- Author(s)
  Z.H.Wu, Y.Kawai, Y.-Y.Fang, C.Q.Chen, H.Kondo, M.Hori, Y.Honda, M.Yamaguchi, H.Amano
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98
- DOI
  10.1063/1.3574607
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656015
[Journal Article] Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy2011
- Author(s)
  Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98
- URL
  http://dx.doi.org/10.1063/1.3574607
- Data Source
  KAKENHI-PROJECT-23656015
[Journal Article] Growth and properties of semi-polar GaN on a patterned silicon substrate2009
- Author(s)
  N. Sawaki, T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi and T. Tanaka
- Journal Title
  
  J. Crystal Growth Online 14 Jan. doi.10.1016
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Si基板上化合物半導体ナノワイヤのMBE-VLS成長2009
- Author(s)
  山口雅史, 他
- Journal Title
  
  信学技法 109
  
  Pages: 49-52
- NAID
  110007230228
- Data Source
  KAKENHI-PROJECT-19651051
[Journal Article] Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE2008
- Author(s)
  T.Tanikawa, T.Hikosaka, Y.Honda, M.Yamaguchi and N.Sawaki
- Journal Title
  
  phys. sta. sol.(c) 5
  
  Pages: 2966-2968
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] SUPERCONDUCTING PROPERTIES IN MAGNETIC FIELDS OF LTG-Sm_<1+x>Ba_<2-x>Cu_3Oy FILMS ON Ni-W TEXTURED SUBSTRATE2008
- Author(s)
  S. Yamaguchi, Y. Yoshida, Y. Ichino, Y. Takai, Y. Shiohara 他
- Journal Title
  
  Physica C (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676005
[Journal Article] SUPERCONDUCTING PROPERTIES IN MAGNETIC FIELDS OF LTG-Smi_<1+x>Ba_<2-x>Cu_3O_y FILMS ON Ni-W TEXTURED SUBSTRATE2008
- Author(s)
  S. Yamaguchi, Y. Yoshida, Y. Ichino, Y. Takai, Y. Shiohara, 他
- Journal Title
  
  Physica C 468
  
  Pages: 1619-1622
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676005
[Journal Article] Fabrication and properties of semi- polar (1-101) and (11-22)InGaN/GaN MQW light emitting diode on patterned Si substrates2008
- Author(s)
  T.Hikosaka, T.Tanikawa, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. sta. sol.(c) 5
  
  Pages: 2234-2237
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] MBE-VLS法を用いた(111)Si基板上へのGaAsナノワイヤ成長2008
- Author(s)
  山口雅史, 白知鉉, 西脇達也
- Journal Title
  
  信学技法 107
  
  Pages: 1-4
- NAID
  110006613698
- Data Source
  KAKENHI-PROJECT-19651051
[Journal Article] Growth of non-polar (11-20)GaN on a patterned (110)Si substrate by selective MOVPE2008
- Author(s)
  T.Tanikawa, D.Rudolph, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  J.Crystal Growth 310
  
  Pages: 4999-5002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Al doping in (1-101)GaN films grownon patterned (001)Si substrate2007
- Author(s)
  T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki, J
- Journal Title
  
  Appl. Phys 101.103513
  
  Pages: 1-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Series resistance of n-Si/AlGaN/GaN structure grown by MOVPE2007
- Author(s)
  Y.Honda, S.Kato, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat. sol 4
  
  Pages: 2740-2743
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN hetero- structures2007
- Author(s)
  X.X.Han, Y.Honda, T.Narita, M.Yamaguchi, and N.Sawaki, J
- Journal Title
  
  Phys.: Condens. Matter 19, 046204
  
  Pages: 1-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Mg doping in (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE2007
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  J.Crystal Growth 298
  
  Pages: 207-210
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Cathodoluminescence Properties of InGaN codoped with Zn and Si2006
- Author(s)
  Y.Honda, Y.Yanase, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (c) 3・6
  
  Pages: 1915-1918
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Carbon Incorporation on (1 101) Facet of A1GaN in Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Jap. J. Appl. Phys. 45・10A
  
  Pages: 7655-7660
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] The surface diffusion of Ga on an A1GaN/GaN stripe structure in the selective MOVPE2006
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (b) 243・7
  
  Pages: 1665-1668
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented(001)Si substrate by selective MOVPE2006
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat.sol 3
  
  Pages: 1425-1428
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Optical phonon-modes and electron-phonon interaction in a quantum dot2006
- Author(s)
  M.Ishidal, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Springer Proceedings in Physics Series 110
  
  Pages: 253-256
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure2006
- Author(s)
  H.Kondo, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Jap. J. Appl. Phys. 45・5A
  
  Pages: 4015-4017
- NAID
  40007248571
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] p-type conduction in a C-doped (1-101) GaN grown on a 7-degree-off oriented (001) Si substrate by selective MOVPE2006
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (c) 3・6
  
  Pages: 1425-1428
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Stata Solidi 2
  
  Pages: 2349-2352
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat. sol 2
  
  Pages: 2349-2352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE2005
- Author(s)
  T.Hikosaka, Y.Honda, N.Koide, M.Yamaguchi, N.Sawaki
- Journal Title
  
  IOP Conf.Series 184
  
  Pages: 251-254
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Incorporation of carbon on a (1-101)facet of GaN by MOVPE2005
- Author(s)
  N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  J.Cryst.Growth 284
  
  Pages: 341-346
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Uniform growth of GaN on AlN templated (111)Si substrate by HVPE2005
- Author(s)
  Y.Honda, M.Okano, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Stata Solidi 2
  
  Pages: 2125-2128
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Optical and electrical properties of (1-101)GaN grown on a 7°off-axis (001)Sisubstrate2004
- Author(s)
  T.Hikosaka, T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  Appl. Phys. Lett 84
  
  Pages: 4717-4719
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] RF-MBE法による各種基板上GaN系ナノワイヤ成長2013
- Author(s)
  水谷駿介，田畑拓也，中川慎太，山口雅史，天野浩，井村将隆，中山佳子，竹口雅樹
- Organizer
  第60回応用物理学会春期学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Si 基板上 InGaN ナノワイヤの積層欠陥と発光特性2012
- Author(s)
  田畑拓也,白知鉉,本田善央,山口雅史,天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] MBE-VLS成長による無触媒SiドープGaAsナノワイヤの熱電性能測定2012
- Author(s)
  山口雅史，白　知鉉，天野　浩
- Organizer
  第31 回電子材料シンポジウム
- Place of Presentation
  静岡県伊豆市
- Data Source
  KAKENHI-PROJECT-23510148
[Presentation] RF-MBE法によるガラス基板上InGaNナノ構造の作製2012
- Author(s)
  中川慎太, 田畑拓也, 本田善央, 山口雅史, 天野浩, 渕真悟, 竹田美和
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第4回　窒化物半導体結晶成長講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Si基板上InGaNナノワイヤの積層欠陥と発光特性2012
- Author(s)
  田畑拓也，白　知鉉，本田善央，山口雅史，天野　浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Challenge for the growth of high-In-content InGaN2012
- Author(s)
  T. DOI:, T. Ohata, T. Tabata, S. Nakagawa, Y. Kawai, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  III-V and III-N-based High Efficiency Solar Cells for Future Energy Harvesting(Invited)
- Place of Presentation
  Chiba, Japan
- Year and Date
  2012-05-11
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Si基板上無触媒GaAsナノワイヤにおける双晶発生確率2012
- Author(s)
  山口雅史，白　知鉉，天野　浩
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛県松山市
- Data Source
  KAKENHI-PROJECT-23510148
[Presentation] Si 基板上 III-V族化合物半導体ナノワイヤの成長と応用2012
- Author(s)
  山口雅史,白知鉉,田畑拓也,中川慎太, 本田善央, 天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Probability of Twin Formation on Self-catalyzed GaAs Nanowires on Si Substrate2012
- Author(s)
  M. Yamaguchi, J.H. Paek, and H. Amano
- Organizer
  International Conference on Superlattices, Nanostructures, and Nanodevices 2012
- Place of Presentation
  Drresden, Germany
- Data Source
  KAKENHI-PROJECT-23510148
[Presentation] Thermoelectric power measurement of catalyst-free Si-doped GaAs nanowires2012
- Author(s)
  M. Yamaguchi, J.H. Paek, and H. Amano
- Organizer
  2012 MRS Spring Meeting
- Place of Presentation
  San Francisco, U.S.A.
- Data Source
  KAKENHI-PROJECT-23510148
[Presentation] 加圧MOVPE法によるInGaN結晶成長2012
- Author(s)
  坂倉誠也、土井友博、大畑俊也、谷川智之、本田善央、山口雅史、天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、東京
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] RF-MBE法によるグラファイト基板上GaNナノワイヤの成長2012
- Author(s)
  中川慎太，田畑拓也，本田善央，山口雅史，天野　浩
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] RF-MBE 法によるグラファイト基板上 GaN ナノワイヤの成長2012
- Author(s)
  中川慎太,田畑拓也,本田善央,山口雅史,天野浩
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Year and Date
  2012-09-14
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] GaN nanowires grown on a graphite substrate by RF-MBE2012
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] 高In組成InGaN実用化にむけて2012
- Author(s)
  天野浩、山口雅史、本田善央、谷川智之、坂倉誠也、大畑俊也、田畑拓也
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、東京
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] GaN nanowires grown on a graphite substrate by RF-MBE2012
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo
- Year and Date
  2012-10-19
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Stacking faults and luminescence property of In- GaN nanowires2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Si基板上III-V族化合物半導体ナノワイヤの成長と応用2012
- Author(s)
  山口雅史，白　知鉉，田畑拓也，中川慎太，本田善央，天野　浩
- Organizer
  第59回応用物理学関係連合講演会(招待講演)
- Place of Presentation
  早稲田大学（東京都）
- Data Source
  KAKENHI-PROJECT-23510148
[Presentation] RF-MBE 法による各種基板上 GaN系ナノワイヤ成長2012
- Author(s)
  水谷駿介,田畑拓也,中川慎太,山口雅史,天野浩,井村将隆,中山佳子,竹口雅樹
- Organizer
  第60回応用物理学会春期学術講演会
- Place of Presentation
  神奈川
- Year and Date
  2012-03-30
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Stacking faults and luminescence property of In- GaN nanowires2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo
- Year and Date
  2012-10-19
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] RF-MBE 法によるガラス基板上 InGaN ナノ構造の作製2012
- Author(s)
  中川慎太,田畑拓也,本田善央,山口雅史, 天野浩, 渕真悟 , 竹田美和
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京
- Year and Date
  2012-04-28
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] 加圧MOVPE法によるInGaN/GaN MQW構造のIn組成揺らぎの改善2011
- Author(s)
  大畑俊也, 坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  春日、福岡
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] RF-MBE 法による(111)Si 基板上への InGaN ナノワイヤの成長 II2011
- Author(s)
  田畑拓也,白知鉉,本田善央,山口雅史,天野浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Growth of InGaN Nanowires on a (111)Si Substrate by RF-MBE2011
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  Glasgow, U.K.
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] RF-MBE 法による(111)Si 基板上へのInGaN ナノワイヤの成長II2011
- Author(s)
  田畑拓也，白　知鉉，本田善央，山口雅史，天野　浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学（山形県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE2011
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  鳥羽国際ホテル（三重県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE2011
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  Glasgow (U.K.)
- Year and Date
  2011-07-14
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] 組成および井戸層厚を変調させたInGaN擬周期構造に関する研究2011
- Author(s)
  坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  第3回窒化物半導体結晶成長講演会
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長2011
- Author(s)
  田畑拓也，白　知鉉，本田善央，山口雅史，天野　浩
- Organizer
  信学会電子デバイス(ED)研究会
- Place of Presentation
  名古屋ベンチャービジネスラボラトリー（愛知県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Second- and third-generation nitride-based LEDs and challenge for future photovoltaic applications2011
- Author(s)
  T.Sano, T.Ohata, S.Sakakura, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, M.Mori, M.Iwaya, M.Imade, Y.Mori
- Organizer
  EDIS2011
- Place of Presentation
  生命ホール、大阪(招待講演)
- Year and Date
  2011-12-17
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] MBE 法による Si 基板上化合物半導体ナノワイヤ成長と評価2011
- Author(s)
  山口雅史,白知鉉,田畑拓也,本田善央,天野浩
- Organizer
  第15回名古屋大学 VBL シンポジウム
- Place of Presentation
  名古屋
- Year and Date
  2011-11-08
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Effect of high-quality GaN substrates on the improvement of performance of group-III-nitride-based devices2011
- Author(s)
  H.Amano, T.Sugiyama, T.Tanikawa, Y.Honda, M.Yamaguchi, Y.Isobe, A.Mishima, T.Makino, M.Iwaya, M.Imade, Y.Kitaoka, Y.Mori
- Organizer
  ECO-MATES2011
- Place of Presentation
  阪急ホテルエクスポパーク、大阪(招待講演)
- Year and Date
  2011-11-29
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] 石英基板上InGaN ナノワイヤの成長2011
- Author(s)
  山口雅史，田畑拓也，白　知鉉，本田善央，天野　浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学（山形県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Thermoelectric power of catalyst-free GaAs nanowires grown by MBE-VLS method2011
- Author(s)
  J. H. Paek, M. Yamaguchi, and H. Amano
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  愛知県産業労働センター（愛知県）
- Data Source
  KAKENHI-PROJECT-23510148
[Presentation] MBE-VLS法によるSi基板上無触媒GaAs/InGaAs軸方向ヘテロ構造ナノワイヤ2011
- Author(s)
  山口雅史，白　知鉉，天野　浩
- Organizer
  第30 回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県）
- Data Source
  KAKENHI-PROJECT-23510148
[Presentation] MBE法によるSi基板上化合物半導体ナノワイヤ成長と評価2011
- Author(s)
  山口雅史，白　知鉉，田畑拓也，本田善央，天野　浩
- Organizer
  第15回名古屋大学VBLシンポジウム
- Place of Presentation
  名古屋大学フロンティアプラザ（愛知県）
- Data Source
  KAKENHI-PROJECT-23510148
[Presentation] 紫外～赤色LED究極効率を目指した窒化物半導体結晶成長技術2010
- Author(s)
  天野浩, 本田善央, 山口雅史
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会「GaN系プラネットコンシャスデバイス・材料の現状」
- Place of Presentation
  仙台
- Year and Date
  2010-11-05
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] AlGaAsマイクロワイヤの中のウィスパリングギャラリーモード2010
- Author(s)
  白知鉱, 山口雅史
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川県平塚市(東海大学湘南キャンパス)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] 加圧MOVPE法を用いたInGaN結晶成長2010
- Author(s)
  坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
- Place of Presentation
  東京
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Catalyst Free MBE-VLS growth of compound semiconductor nanowires on(111)Si substrate2009
- Author(s)
  M.Yamaguchi
- Organizer
  International Mini-Workshop on Plasma and Nanotechnology
- Place of Presentation
  Roskilde, Denmark
- Year and Date
  2009-06-12
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] Catalyst free MBE-VLS growth of GaAs/AlGaAs core-shell nanowires on(111)Si substrate2009
- Author(s)
  山口雅史, 他
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  滋賀県守山市(ラフォーレ琵琶湖)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] Si基板上化合物半導体ナノワイヤのMBE-VLS成長2009
- Author(s)
  山口雅史, 他
- Organizer
  信学会電子デバイス研究会
- Place of Presentation
  愛知県豊橋市(豊橋技科大サテライトオフィス)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] Catalyst Free MBE-VLS growth of GaAs/AlGaAs core-shell nanowires on(111)Si substrate2009
- Author(s)
  M.Yamaguchi, et al.
- Organizer
  E-MRS 2009 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate (Invited)2008
- Author(s)
  N.Sawaki, T.Hikosaka, N.Koide, Y.Honda, and Yamaguchi
- Organizer
  ISGN-2
- Place of Presentation
  Izu
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Growth mechanism of GaAs nanowire on (111)Si substrate2008
- Author(s)
  山口雅史, 他
- Organizer
  第27回電子材料シンポジウム
- Place of Presentation
  伊豆市
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] MBE-VLS growth mechanism of GaAs nanowire on (111)Si substrate2008
- Author(s)
  M. Yamaguchi, et al.
- Organizer
  The 35th International Symposium on Compound Semiconductors (ISCS 2008)
- Place of Presentation
  Rust, Germany
- Year and Date
  2008-09-21
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] MBE-VLS法を用いた(111)Si基板上へのGaAsナノワイヤ成長2008
- Author(s)
  山口雅史, 白知鉉, 西脇達也
- Organizer
  電子情報通信学会電子デバイス(ED)研究会
- Place of Presentation
  札幌
- Year and Date
  2008-01-30
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] MBE-VLS法を用いた(111)Si基板上へのGaAsナノワイヤ成長2008
- Author(s)
  山口雅史、白知鉱、西脇達也、吉田隆、澤木宣彦
- Organizer
  電子情報通信学会
- Place of Presentation
  北海道大学
- Year and Date
  2008-01-30
- Data Source
  KAKENHI-PROJECT-19676005
[Presentation] MBE-VLS法によるSi基板上のGaAsナノワイヤの作製-II:サイズ制御2008
- Author(s)
  白知鉉, 山口雅史, 澤木宣彦
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  千葉・船橋
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] MBE法を用いたGaAsナノワイヤの成長と評価2007
- Author(s)
  山口雅史, 白知鉉, 西脇達也
- Organizer
  第11回名古屋大学VBLシンポジウム
- Place of Presentation
  名古屋
- Year and Date
  2007-11-06
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] Time-resolved spectroscopy in an undoped GaN (1-101)2007
- Author(s)
  EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Organizer
  HCIS-15
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN2007
- Author(s)
  J.Saida, EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Organizer
  ICNS-7
- Place of Presentation
  Las Vegas
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] 加工シリコン基板上への半極性GaNの選択成長と物性2007
- Author(s)
  彦坂年輝、谷川智之、本田善央、山口雅史、澤木宣彦
- Organizer
  JSPS-162研究会
- Place of Presentation
  川口屋リバーサイドホテル
- Year and Date
  2007-12-10
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] MBE-VLS growth of GaAs nanowire on (111)Si substrate2007
- Author(s)
  西脇達也, 山口雅史, 白知鉉
- Organizer
  第26回電子材料シンポジウム
- Place of Presentation
  滋賀
- Year and Date
  2007-07-06
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] MBE Growth of GaAs Nanowires on a(111)Si Substrate2007
- Author(s)
  J. H. Paek, M. Yamaguchi
- Organizer
  The 34th International Symposium on Compound Semiconductors(ISCS 2007)
- Place of Presentation
  京都
- Year and Date
  2007-10-16
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] SUPERCONDUCTING PROPERTIES IN MAGNETIC FIELDS OF LTG-Sm_<1+x>Ba_<2-x>Cu_3O_y FILMS ON Ni-W TEXTURED SUBSTRATE2007
- Author(s)
  S. Yamaguchi, Y. Yoshida, Y. Ichino, Y. Takai, Y. Shiohara 他
- Organizer
  The 20th International Symposium on Superconductivity(ISS2007)
- Place of Presentation
  Epocal Tsukuba, Japan
- Year and Date
  2007-10-28
- Data Source
  KAKENHI-PROJECT-19676005
[Presentation] MBE-VLS法によるSi基板上へのGaAsナノワイヤ成長形態2007
- Author(s)
  山口雅史, 白知鉉, 西脇達也
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19651051
[Presentation] Acceptor Level due to Carbon in a (1-101)AlGaN2006
- Author(s)
  N.Sawaki, N.Koide, T.Hikosaka, Y.Honda, and M.Yamaguchi
- Organizer
  28th ICPS
- Place of Presentation
  Wien
- Data Source
  KAKENHI-PROJECT-16106001

1. SAWAKI Nobuhiko (70023330)

# of Collaborated Projects: 8 results

# of Collaborated Products: 26 results
2. HONDA Yoshio (60362274)

# of Collaborated Projects: 5 results

# of Collaborated Products: 61 results
3. AMANO Hiroshi (60202694)

# of Collaborated Projects: 3 results

# of Collaborated Products: 38 results
4. TANAKA Shigeyasu (70217032)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
5. 安亨洙 (40303672)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. YOSHIDA Yutaka (20314049)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
7. MIYAZAKI Yasuji (70315159)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. AWAJI Satoshi (10222770)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. ICHINO Yusuke (90377812)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. MORI Tatsuo (40230073)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. MIZUTANI Teruyosh (70023249)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. FUNAKI Shuhei

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. OZAKI Toshinori

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. SUZUKI Takamasa

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 一野裕亮

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results

YAMAGUCHI Masahito 山口 雅史

山口 雅史 ヤマグチ マサヒト

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Ｓｉ基板上ＧａＡｓ系三元混晶ナノワイヤの成長機構解明と欠陥抑制に関する研究Principal Investigator

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MBE-VLS法によるシリコン基板上GaAs系ナノワイヤ構造の作製と評価Principal Investigator

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電子線露光法による極微細平面・立体量子構造の作製とその評価に関する研究Principal Investigator

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極短周期GaAs系平面超格子構造における量子輸送現象に関する研究Principal Investigator

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電子線露光装置を用いた化合物半導体における平面超格子構造作製に関する研究Principal Investigator

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YAMAGUCHI Masahito 山口雅史

山口雅史ヤマグチマサヒト