SUMIYA Masatomo 角谷正友

Researcher Number	20293607
Other IDs
External Links
Affiliation (Current)	2025: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主席研究員
Affiliation (based on the past Project Information) *help	2024: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主席研究員 2018 – 2023: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 2017: 国立研究開発法人物質・材料研究機構, 材料研究機構・機能性材料研究拠点, 主席研究員 2016: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 2015: 物質・材料研究機構, ワイドギャップ機能材料グループ, 研究員 1998 – 2004: 静岡大学, 工学部, 助手
Review Section/Research Field	Principal Investigator 無機工業化学 Except Principal Investigator Basic Section 26060:Metals production and resources production-related / Basic Section 19020:Thermal engineering-related / Science and Engineering / Electronic materials/Electric materials / Applied materials science/Crystal engineering / Electronic materials/Electric materials / 無機工業化学
Keywords	Principal Investigator 価電子帯制御 / ウルツ鉱型薄膜 / 硝酸溶液処理 / stereo-selective成長 / 光触媒効果 / 極性構造 / 窒化物半導体 / 基板窒化 / CAICISS / GaN … More / KOH エッチング / ab initio MD / 不純物 / 成長モード / 極性 / ウルツ鉱GaN / MOCVD … More Except Principal Investigator 水素ラジカル / 太陽電池 / 熱炭素還元 / シリコン / MOCVD / ZnO / a-Si:H / phonon / thermal management / thermal dissipation / superlattices / GaN / 熱輸送 / 脱炭素 / 高周波誘導加熱 / 熱炭素還元プロセス / 炭素熱還元 / 熱力学計算 / ニッケル / フラックス / 結晶工学 / 結晶成長 / 格子欠陥 / 長周期InGaN/GaN超格子構造 / イオン注入 / 捕獲 / キャリア / 欠陥 / 光熱偏光分光法 / X線回折 / 陽電子 / 0次元欠陥 / 理論計算 / 室温PL発光寿命 / 超格子構造 / キャリア捕獲 / 結晶特異構造 / 電気的特性 / 光学特性 / 結晶欠陥 / 光熱偏向分光法 / 陽電子消滅シミュレーション / 陽電子消滅 / 空孔型欠陥 / 点欠陥 / 結晶 / ショットキーダイオード / 有機金属気相成長 / スイッチング特性 / デバイス･スイッチング特性 / 電流コラプス / MOCVD結晶成長 / デバイス・スイッチング特性 / 欠陥準位 / 炭素 / GaNバッファ層 / AlGaN/GaNヘテロ構造 / transmission electron microscopy / misoriented substrate / dislocation / gallium arsenic substrate / cross-hatched pattern / graded layer / indium gallium arsenic / TEM / 透過電子顕微鏡観察 / オフ基板 / 転位 / GaAs基板 / クロスハッチパターン / グレーデッド層 / InGaAs / High Quality / Dislocation Density / Organometallic Vapor Phase Epitax / Selective Growth / Nitride / Compound Semiconductor / 高品位化 / 高品位 / 転位密度 / 有機金属気相成長法 / 選択成長 / 窒化物 / 化合物半導体 / precusor / laser ablation / photo degradation / KCN treatment / LD TOF-MS / アモルファスシリコン / 酸化亜鉛 / レーザー脱離飛行時間型質量分析器 / KCN処理a-Si:H / 飛来種 / レーザーアブレーション / 光劣化抑制 / KCN処理 / レーザー脱離飛行時間型質量分析 Less

New Hybrid Silicon Reduction Process Using Hydrogen Radicals for Decarbonization
- Principal Investigator
  
  伊高健治
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 26060:Metals production and resources production-related
- Research Institution
  Hirosaki University
窒化物超格子フォノニック結晶による室温熱輸送制御
- Principal Investigator
  
  SANG Liwen
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 19020:Thermal engineering-related
- Research Institution
  National Institute for Materials Science
Next-generation carbothermal reduction process of silicon with the metal additive for solar cell application
- Principal Investigator
  
  Itaka Kenji
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 26060:Metals production and resources production-related
- Research Institution
  Hirosaki University
Study of trapping/scattering dynamics of carriers in crystal singularity by means of positron annihilation
- Principal Investigator
  
  Uedono Akira
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structures
- Principal Investigator
  
  NAKANO Yoshitaka
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chubu University
エピタキシャル薄膜における極性構造の原子レベル理解と新機能探索Principal Investigator
- Principal Investigator
  
  角谷正友
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  無機工業化学
- Research Institution
  Shizuoka University
Realization of homogeneous dislocation distribution in a buffer layer by self-organization
- Principal Investigator
  
  TAKANO Yasushi
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Shizuoka University
Improvement of GaN epi-layer quality and reduction of dislocation density by selective growth method using buried metal
- Principal Investigator
  
  FUKE Shunro
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Shizuoka Uhiversity
コンビナトリアル合成MOCVD法による高格子不整合半導体薄膜の作製Principal Investigator
- Principal Investigator
  
  角谷正友
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  無機工業化学
- Research Institution
  Shizuoka University
Investigation of a light-induced Structure change of amorphous materials by using laser ablation method
- Principal Investigator
  
  KOINUMA Hideomi
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  無機工業化学
- Research Institution
  Tokyo Institute of Technology

All 2023 2021 2020 2019 2018 2017 2016 2015 2014 2013 2005 Other

All Journal Article Presentation Patent

[Journal Article] High‐pressure MOCVD growth of InGaN thick films toward the photovoltaic applications2023
- Author(s)
  Sang Liwen、Liao Meiyong、Sumiya Masatomo、Yang Xuelin、Shen Bo
- Journal Title
  
  Fundamental Research
  
  Volume: 3 Issue: 3 Pages: 403-408
- DOI
  10.1016/j.fmre.2021.11.024
- Data Source
  KAKENHI-PROJECT-23K26054
[Journal Article] Influence of thin MOCVD-grown GaN layer on underlying AlN template2020
- Author(s)
  Sumiya Masatomo、Fukuda Kiyotaka、Yasiro Shuhei、Honda Tohru
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 532 Pages: 125376-125376
- DOI
  10.1016/j.jcrysgro.2019.125376
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire2020
- Author(s)
  Sumiya Masatomo、Kindole Dickson、Fukuda Kiyotaka、Yashiro Shuhei、Takehana Kanji、Honda Tohru、Imanaka Yasutaka
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4 Pages: 1900524-1900524
- DOI
  10.1002/pssb.201900524
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Dynamic observation and theoretical analysis of initial O2 molecule adsorption on polar and m-plane surfaces of GaN2020
- Author(s)
  M. Sumiya, M. Sumita, Y. Asai, R. Tamura, A. Uedono, A. Yoshigoe
- Journal Title
  
  The Journal of Physical Chemistry C
  
  Volume: 124 Issue: 46 Pages: 25282-25290
- DOI
  10.1021/acs.jpcc.0c07151
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05338, KAKENHI-PLANNED-16H06424
[Journal Article] MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template2019
- Author(s)
  Matsuura Haruka、Onuma Takeyoshi、Sumiya Masatomo、Yamaguchi Tomohiro、Ren Bing、Liao Meiyong、Honda Tohru、Sang Liwen
- Journal Title
  
  Applied Sciences
  
  Volume: 9 Issue: 9 Pages: 1746-1746
- DOI
  10.3390/app9091746
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K14141, KAKENHI-PLANNED-16H06424
[Journal Article] Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy2019
- Author(s)
  Sumiya M.、Fukuda K.、Takashima S.、Ueda S.、Onuma T.、Yamaguchi T.、Honda T.、Uedono A.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 511 Pages: 15-18
- DOI
  10.1016/j.jcrysgro.2019.01.021
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Terahertz Cyclotron Resonance in AlGaN/GaN Heterostructures2019
- Author(s)
  Kindole Dickson、Imanaka Yasutaka、Takehana Kanji、Sang Liwen、Sumiya Masatomo
- Journal Title
  
  Journal of the Korean Physical Society
  
  Volume: 74 Issue: 2 Pages: 159-163
- DOI
  10.3938/jkps.74.159
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PROJECT-18K14141
[Journal Article] Growth of InGaN films on hardness-controlled bulk GaN substrates2019
- Author(s)
  Sumiya Masatomo、Fukuda Kiyotaka、Fujikura Hajime、Konno Taichiro、Suzuki Takayuki、Fujimoto Tetsuji、Yoshida Takehiro、Ueda Shigenori、Watanabe Kenji、Ohnishi Tsuyoshi、Honda Tohru
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Issue: 17 Pages: 172102-172102
- DOI
  10.1063/1.5110224
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Determination of the transition point from electron accumulation to depletion at the surface of In x Ga1－ x N films2018
- Author(s)
  X. Sun, X. Wang, S. Liu, P. Wang, D. Wang, X. Zheng, L. Sang, M. Sumiya, S. Ueda, M. Li, J. Zhang, W. Ge and B. Shen
- Journal Title
  
  APEX
  
  Volume: 11 Issue: 2 Pages: 021001-021001
- DOI
  10.7567/apex.11.021001
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Valence band edge tail states and band gap defect levels of GaN bulk and InxGa1－xN films detected by hard X-ray photoemission and photothermal deflection spectroscopy2018
- Author(s)
  M. Sumiya, S. Ueda, K. Fukuda, Y. Asai, Y. Cho, L. Sang, A. Uedono, T. Sekiguchi, T. Onuma, and T. Honda
- Journal Title
  
  APEX
  
  Volume: 11 Issue: 2 Pages: 021002-021002
- DOI
  10.7567/apex.11.021002
- NAID
  210000136099
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy2018
- Author(s)
  Sumiya Masatomo、Fukuda Kiyotaka、Iwai Hideo、Yamaguchi Tomohiro、Onuma Takeyoshi、Honda Tohru
- Journal Title
  
  AIP Advances
  
  Volume: 8 Issue: 11 Pages: 115225-115225
- DOI
  10.1063/1.5052493
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams2018
- Author(s)
  Uedono Akira、Nabatame Toshihide、Egger Werner、Koschine T?njes、Hugenschmidt Christoph、Dickmann Marcel、Sumiya Masatomo、Ishibashi Shoji
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 15 Pages: 155302-155302
- DOI
  10.1063/1.5026831
- NAID
  120007133778
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation2017
- Author(s)
  Uedono Akira、Imanishi Masayuki、Imade Mamoru、Yoshimura Masashi、Ishibashi Shoji、Sumiya Masatomo、Mori Yusuke
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 475 Pages: 261-265
- DOI
  10.1016/j.jcrysgro.2017.06.027
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams2017
- Author(s)
  Uedono Akira、Tanaka Taketoshi、Ito Norikazu、Nakahara Ken、Egger Werner、Hugenschmidt Christoph、Ishibashi Shoji、Sumiya Masatomo
- Journal Title
  
  Thin Solid Films
  
  Volume: 639 Pages: 78-83
- DOI
  10.1016/j.tsf.2017.08.021
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures2015
- Author(s)
  Yoshitaka Nakanoa, Yoshihiro Irokawa and Masatomo Sumiya
- Journal Title
  
  Philosophical Magazine Letters
  
  Volume: 95 Issue: 6 Pages: 333-339
- DOI
  10.1080/09500839.2015.1062154
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26420286, KAKENHI-PROJECT-25420300
[Journal Article] Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures2014
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
- Journal Title
  
  Materials Research Society Symposium Proceedings
  
  Volume: 1635 Pages: 1-6
- DOI
  10.1557/opl.2014.102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420300
[Journal Article] Effect of treatments of sapphire substrate on growth of GaN film2005
- Author(s)
  M.Sumiya, S.Fuke
- Journal Title
  
  Applied Surface Science (in press)
- Data Source
  KAKENHI-PROJECT-14703024
[Journal Article] 極性構造から見たGaN薄膜成長におけるサファイア基板上バッファの層の機能2005
- Author(s)
  角谷正友, 福家俊郎
- Journal Title
  
  日本結晶成長学会誌 (accepted)
- Data Source
  KAKENHI-PROJECT-14703024
[Patent] サファイア基板上への窒化物薄膜の製造方法及び窒化物薄膜装置2005
- Inventor(s)
  角谷正友, 福家俊郎
- Industrial Property Rights Holder
  科学技術振興機構, 静岡大学
- Industrial Property Number
  2005-084264
- Filing Date
  2005-03-23
- Data Source
  KAKENHI-PROJECT-14703024
[Presentation] Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates2021
- Author(s)
  M. Sumiya, Y. Takahara, A. Alghamdi, G. Andersson, A. Uedono, and Y. Imanaka
- Organizer
  8th Asian Conf. Cryst. Growth and Cryst. Tech.
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] InGaN/GaNヘテロ構造成長におけるAlNテンプレートの変化2020
- Author(s)
  角谷正友，高原悠希，矢代秀平，本田徹，Dickerson Kindole1，竹端寛治，今中康貴，上殿明良
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlNテンプレート上AlGaN/InxGa1-xNヘテロ構造の成長2020
- Author(s)
  角谷正友，高原悠希，今中康貴，Alghamdi Amira，Gunther Andersson，竹端寛治，上殿明良
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] InGaN 二次元電子系の有効質量の評価2019
- Author(s)
  今中康貴、Dickerson Kindole、竹端寛治、角谷正友
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 光熱偏向分光法によるギャップ中準位の評価2019
- Author(s)
  角谷正友
- Organizer
  第24回結晶工学セミナー工学院大学新宿キャンパス
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Open spaces in Al2O3 film deposited on widegap semiconductors probed by monoenergetic positron beams2019
- Author(s)
  A. Uedono, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, M. Sumiya, and S. Ishibashi
- Organizer
  American Vacuum Society Int. Sym. Ohio
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 放射光光電子分光によるIII-V族窒化物半導体の価電子帯構造と表面酸化プロセスの評価2019
- Author(s)
  角谷正友, 上田茂典, 吉越章隆, 隅田真人
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] サイクロトロン共鳴に向けたAlNテンプレート上 AlGaN/InGaNヘテロ構造の成長2019
- Author(s)
  角谷正友、福田清貴、矢代秀平、本田徹、D. Kindole、竹端寛治、今中康貴
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Electron transport at the interface of AlGaN/InGaN fabricated on AlN template2019
- Author(s)
  M. Sumiya, D. Kindole, S. Yashiro, K. Takehana, T. Honda, and Y. Imanaka
- Organizer
  日本MRS創立30周年記念シンポジウム
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlNテンプレート上に成長したGaN薄膜の光熱偏向分光法による評価2019
- Author(s)
  矢代秀平、本田徹、角谷正友
- Organizer
  第2回結晶工学ⅹISYSE 合同研究会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 光熱偏向分光法によるGaN自立基板上ホモエピタキシャル層の評価2019
- Author(s)
  福田清貴, 矢代秀平, 藤倉序章, 今野泰一郎, 鈴木貴征, 藤本哲爾, 吉田丈洋, 尾沼猛儀, 山口智広,本田徹, 角谷正友
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 光熱偏向分光によるIII-V族窒化物の評価2019
- Author(s)
  角谷正友
- Organizer
  レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Direct Growth of AlGaN/InGaN/GaN Structure on AlN Template for Measurement of Effective Mass in InGaN Layer2019
- Author(s)
  M. Sumiya, D. Kindole, S. Yashiro, T. Honda, and Y. Imanaka
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 陽電子消滅による窒化物半導体中0次元特異構造（点欠陥）のキャリア捕獲の評価2018
- Author(s)
  上殿明良，石橋章司，角谷正友
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Carrier trapping by vacancy-type defects in group-III nitrides studied by means of positron annihilation2018
- Author(s)
  A. Uedono, M. Sumiya, and S. Ishibashi
- Organizer
  Third DAE-BRNS Trombay Positron Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O2 molecular beam irradiation2018
- Author(s)
  Y. Asai, A. Yoshigoe, M. Sumita, A. Uedono, and M. Sumiya
- Organizer
  Int. Workshop on Nitride Semiconductor 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] PDS measurement for III-V nitride samples; InxGa1-xN, ion-implanted GaN and MOS structure2018
- Author(s)
  K. Fukuda, T. Onuma, T. Yamaguchi, T. Honda and M.Sumiya
- Organizer
  第37回電子材料シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Evaluation of Structural Disorder and In-Gap States of III-V nitrides by Photothermal Deflection Spectroscopy2018
- Author(s)
  M. Sumiya, K. Fukuda, Y. Nakano, S. Ueda, L. Sang, H. Iwai, T. Yamaguchi, T. Onuma, and T. Honda
- Organizer
  7th International Symposium of Nitride Semiconductor
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Vacancy-Type Defects and Their Carrier Trapping Properties in GaN Studied by Monoenergetic Positron Beams2018
- Author(s)
  A. Uedono, T. Tanaka, N. Ito, K. Nakahara, W. Egger, C. Hugenschmidt, S. Ishibashi, and M. Sumiya
- Organizer
  Electro Chemical Soc. and Americas Int. Meeting Electrochem. Solis state Science
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal election spectroscopy2018
- Author(s)
  M. Sumiya, K. Fukuda, S. Takashima, T. Yamaguchi, T. Onuma, T. Honda, and A. Uedono
- Organizer
  19TH Int. Conf. Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] III-V族窒化物の価電子帯構造およびギャップ内準位の評価2018
- Author(s)
  角谷正友，福田清貴，上田茂典，浅井祐哉，Cho Yujin，関口隆史，上殿明良，尾沼猛儀，Sang Liwen，山口智広，本田徹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Evaluation of Al2O3/n-, p-GaN samples by photothermal deflection spectroscopy2018
- Author(s)
  K. Fukuda, Y. Asai, L. Sang, A. Yoshigoe, A. Uedono, T. Onuma, T. Yamaguchi, T. Honda, and M. Sumiya
- Organizer
  Int. Workshop on Nitride Semiconductor 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 分子線酸素ビーム照射下その場観察XPS によるGaN 表面酸化の面方位依存性2018
- Author(s)
  浅井祐哉，関慶祐，吉越章隆，隅田真人，石垣隆正，上殿明良，角谷正友
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 光熱偏向分光法によるMgイオン注入GaN層の評価2018
- Author(s)
  福田清貴，高島信也，尾沼猛儀，山口智広，本田徹，上殿明良，角谷正友
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] III-V族窒化物の価電子帯構造およびギャップ内準位の評価2018
- Author(s)
  角谷正友, 福田清貴，上田茂典, 浅井祐哉, Cho Yujin, 関口隆史, 上殿明良, 尾沼猛儀, Sang Liwen, 本田徹
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] イオン注入したGaNの光熱偏向分光法による評価2018
- Author(s)
  福田清貴，尾沼猛儀, 山口智広、本田徹, 岩井秀夫、Sang Liwen,角谷正友
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Al2O3/n-, p-GaN構造の光熱偏向分光法による評価2018
- Author(s)
  福田清貴，浅井祐哉，関慶祐，Sang Liwen，吉越章隆，上殿明良，石垣隆正，尾沼猛儀，山口智広，本田徹，角谷正友
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 光熱偏向分光法によるGa1-xInxN薄膜の評価2017
- Author(s)
  福田清貴、尾沼猛儀、Sang Liwen、山口智広、本田徹、角谷正友
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] InGaN系太陽電池の欠陥制御と高効率化2016
- Author(s)
  角谷正友、Liwen Sang
- Organizer
  2016年真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場(愛知県名古屋市）
- Year and Date
  2016-12-01
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Carbon-Related Deep-Level Defects and Carrier Trapping Characteristics in AlGaN/GaN Hetero-Structures2015
- Author(s)
  Y. Nakano, Y. Irokawa, M. Sumiya, S. Yagi, H. Kawai
- Organizer
  11th International Conference on Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijing
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] AlGaN/GaNヘテロ構造の炭素関連欠陥準位とターンオン電流回復特性2014
- Author(s)
  中野由崇，色川芳宏，角谷正友, 住田行常，八木修一, 河合弘治
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Containing Various Carbon Concentrations2013
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
- Organizer
  2013 Materials Research Society Fall Meeting
- Place of Presentation
  Hynes Convention Center (Boston)
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] C-t法によるAlGaN/GaNヘテロ構造のターンオン回復特性評価
- Author(s)
  中野由崇, 色川芳宏, 角谷正友, 八木修一, 河合弘治
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学 (北海道・札幌市)
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Carbon-Related Deep-Level Defects and Carrier-Trapping Characteristics in AlGaN/GaN Hetero-Structures
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Shuichi Yagi, Hiroji Kawai
- Organizer
  7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015)
- Place of Presentation
  名古屋大学 (愛知県・名古屋市)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-25420300

1. FUKE Shunro (00022236)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. TAKANO Yasushi (00197120)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. Itaka Kenji (40422399)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. KOINUMA Hideomi (70011187)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. NAKANO Yoshitaka (60394722)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
6. IROKAWA Yoshihiro (90394832)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
7. Uedono Akira (20213374)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
8. 大島永康 (00391889)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 石橋章司 (30356448)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
10. 奥村宏典 (80756750)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. SANG Liwen (90598038)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
12. MATSUDA Akihisa

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. KAWAI Hiroji

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
14. 吉越章隆

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

SUMIYA Masatomo 角谷 正友

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エピタキシャル薄膜における極性構造の原子レベル理解と新機能探索Principal Investigator

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コンビナトリアル合成MOCVD法による高格子不整合半導体薄膜の作製Principal Investigator

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[Journal Article] High‐pressure MOCVD growth of InGaN thick films toward the photovoltaic applications2023

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[Journal Article] Influence of thin MOCVD-grown GaN layer on underlying AlN template2020

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[Journal Article] Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire2020

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[Journal Article] Dynamic observation and theoretical analysis of initial O2 molecule adsorption on polar and m-plane surfaces of GaN2020

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[Journal Article] MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template2019

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SUMIYA Masatomo 角谷正友