KUMAGAI Yoshinao 熊谷義直

… Alternative Names

熊谷義直クマガイヨシナオ

KUMAGA Yoshinao 熊谷義直

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Researcher Number	20313306
Other IDs
Affiliation (Current)	2025: 東京農工大学, 工学(系)研究科(研究院), 卓越教授
Affiliation (based on the past Project Information) *help	2022 – 2023: 東京農工大学, 工学(系)研究科(研究院), 卓越教授 2017 – 2020: 東京農工大学, 工学(系)研究科(研究院), 卓越教授 2013 – 2016: 東京農工大学, 工学(系)研究科(研究院), 教授 2013: 東京農工大学, 大学院工学研究院, 教授 2012: 東京農工大学, 工学(系)研究科(研究院), 准教授 … More 2010 – 2012: 東京農工大学, 大学院・工学研究院, 准教授 2007 – 2009: 東京農工大学, 大学院・共生科学技術研究院, 准教授 2006: 東京農工大学, 大学院共生科学技術研究院, 助教授 2005: 東京農工大学, 大学院・共生科学技術研究部, 助教授 2001 – 2002: 東京農工大学, 工学部, 講師 2000: Tokyo Univ. of Agriculture & Technology, Department of Applied Chemistry, Assistant Prof., 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Science and Engineering / Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Applied materials science/Crystal engineering / Science and Engineering
Keywords	Principal Investigator 窒化アルミニウム / 不純物 / HVPE法 / エピタキシャル成長 / 分解メカニズム / 拡張熱力学解析 / 相整合混晶 / 相混在面 / 反応解析 / 相混在 … More / バンドエンジニアリング / 格子引き込み / 混晶成長 / 発現相制御 / 非熱平衡 / 熱平衡 / Ⅲ族セスキ酸化物半導体 / ハライド気相成長法 / ミスト化学気相堆積法 / 非熱平衡成長 / 熱平衡成長 / 準安定相 / 安定相 / Ⅲ族セスキ酸化物半導体結晶 / PVT法 / 導電性制御 / バルク結晶 / 結晶工学 / エッチピット / 転位 / Siドーピング / ショットキーバリアダイオード / ドーピング / n形導電性 / 点欠陥 / 深紫外発光ダイオード / 昇華法 / MOVPE法 / 深紫外線LED / 深紫外光透過性 / 転位密度 / サファイア / 無極性 / 自発分離 / ヘテロ界面 / サファイア基板 / 自立基板 / 分解 / 面極性 / 基板 / HVPE / AlN / シリコン基板 / 熱力学解析 / ジクロルシラン / 塩化鉄 / 気相エピタキシー / 鉄シリサイド / 環境半導体 … More Except Principal Investigator Web / 気相成長 / HVPE / 窒化物半導体 / Internet / Thermodynamic analysis / 計算機能を有するデータベース / 化合物半導体 / MOVPE / インターネット / 熱力学解析 / 窒化物 / HVPE成長 / 自立基板結晶 / ハライド気相成長 / III族セスキ酸化物 / バッファ層 / ワイドバンドギャップ半導体 / 高移動度半導体 / 酸化インジウム / ハライド気相成長法 / Compound Semiconductor / Vapor Phase Epitaxy / Data base using calculation system / 電子デバイス / 光デバイス / データーベース / 気相エピタキシャル成長 / Vapor phase epitaxy / Vapor-solid relation / Nitrides / VPE / MBE / III族窒化物 / ネットワーク / 固相組成 / 気相-固相関係 / 原料分子制御 / バルク結晶 / THVPE / エピタキシャル成長 / 窒化ガリウム / 結晶工学 / エピタキシャル / 結晶成長 / A1GaN / A1N / A1系窒化物 / AIGaN / AIN / AlGaN / AlN / HVPE成 / 原料分子制御法 / Al系窒化物 / 厚膜エピタキシー Less

Growth of low dislocation density indium oxide single crystal layer to elucidate intrinsic electron mobility
- Principal Investigator
  
  後藤健
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Tokyo University of Agriculture and Technology
Bottom up creation of singularities by utilization of equilibrium and non-equilibrium crystal growth from vapor phasePrincipal Investigator
- Principal Investigator
  
  Kumagai Yoshinao
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Realization of n-type AlN by clarifying the mechanism of point defect formation in bulk AlN crystalPrincipal Investigator
- Principal Investigator
  
  Kumagai Yoshinao
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxyPrincipal Investigator
- Principal Investigator
  
  KUMAGAI Yoshinao
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
New Growth Method for Bulk GaN using molecule-controlling method
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Investigation of void formation mechanism beneath thin AlN layers grown on foreign substratesPrincipal Investigator
- Principal Investigator
  
  KUMAGAI Yoshinao
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Thick epitaxial growth of AlN and AlGaN by using controlling molecules of source precursors
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo University of Agriculture and Technology
その場重量測定による窒化アルミニウム基板表面反応メカニズムの解明Principal Investigator
- Principal Investigator
  
  熊谷義直
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Thermodynamic interactive database for vapor phase epitaxy using internet
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
環境半導体鉄シリサイドの気相エピタキシャル成長Principal Investigator
- Principal Investigator
  
  熊谷義直
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Thermodynamic analysis system for vapor phase epitaxy by using internet
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture & Technology

[Book] GaNパワーデバイスの技術展開(分担執筆)2012
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Total Pages
  264
- Publisher
  サイエンス&テクノロジー
- Data Source
  KAKENHI-PROJECT-23360008
[Book] Technology of Gallium Nitride Crystal Growth Hydride Vapor Epitaxy of GaN2010
- Author(s)
  A.Koukitu, Y.Kumagai
- Total Pages
  326
- Publisher
  Springer
- Data Source
  KAKENHI-PLANNED-18069004
[Book] Springer Handbook of Crystal Growth2010
- Author(s)
  Carl Hemmingsson, Bo Monemar, Yoshinao Kumagai, Akinori Koukitu
- Publisher
  Springer
- Data Source
  KAKENHI-PLANNED-18069004
[Book] Technology of Gallium Nitride Crystal Growth Hydride Vapor Epitaxy of GaN2010
- Author(s)
  A. Koukitu, Y. Kumagai
- Publisher
  Springer
- Data Source
  KAKENHI-PLANNED-18069004
[Book] 室化物基板および格子整合成長とデバイス特性(天野浩編集)・室化ガリウムのハイドライド気相成長2009
- Author(s)
  纐纈明伯、熊谷義直
- Total Pages
  225
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PLANNED-18069004
[Book] 熱力学解析による化合物半導体の気相成長第79巻,第11号2009
- Author(s)
  纐纈明伯, 熊谷義直
- Publisher
  金属
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0001) substrates2021
- Author(s)
  Hidetoshi Nakahata, Rie Togashi, Ken Goto, Bo Monemar, Yoshinao Kumagai
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 563 Pages: 1261111-6
- DOI
  10.1016/j.jcrysgro.2021.126111
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Journal Article] Thermodynamic and experimental studies of β-Ga2O3 growth by metalorganic vapor phase epitaxy2021
- Author(s)
  Ken Goto, Kazutada Ikenaga, Nami Tanaka, Masato Ishikawa, Hideaki Machida, and Yoshinao Kumagai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 4 Pages: 0455051-8
- DOI
  10.35848/1347-4065/abec9d
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06417
[Journal Article] Temperature dependence of Ga2O3 growth by halide vapor phase epitaxy on sapphire and β-Ga2O3 substrates2020
- Author(s)
  Ken Goto, Hidetoshi Nakahata, Hisashi Murakami, and Yoshinao Kumagai
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 22 Pages: 2221011-5
- DOI
  10.1063/5.0031267
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06417
[Journal Article] Comparison of O2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy2018
- Author(s)
  Keita Konishi, Ken Goto, Rie Togashi, Hisashi Murakami, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Yoshinao Kumagai
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 492 Pages: 39-44
- DOI
  10.1016/j.jcrysgro.2018.04.009
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PROJECT-16K04944
[Journal Article] High rate growth of In2O3 at 1000℃ by halide vapor phase epitaxy2016
- Author(s)
  R. Togashi, S. Numata, M. Hayashida, T. Suga, K. Goto, A. Kuramata, S. Yamakoshi, P. Paskov, B. Monemar, and Y. Kumagai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202B3-1202B3
- DOI
  10.7567/jjap.55.1202b3
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PROJECT-16K04944
[Journal Article] Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H22016
- Author(s)
  R. Togashi, Y. Kisanuki, K. Goto, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu, and Y. Kumagai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202BE-1202BE
- DOI
  10.7567/jjap.55.1202be
- NAID
  210000147274
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PROJECT-16K04944
[Journal Article] Influence of high-temperature processing on the surface properties of bulk AlN substrates2016
- Author(s)
  S. Tojo, R. Yamamoto, R. Tanaka, Q.-T. Thieu, R. Togashi, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, H. Murakami, R. Collazo, A. Koukitu, B. Monemar, Z. Sitar, Y. Kumagai
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 446 Pages: 33-38
- DOI
  10.1016/j.jcrysgro.2016.04.030
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555, KAKENHI-PROJECT-26790043, KAKENHI-PROJECT-16K04945
[Journal Article] Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy2015
- Author(s)
  T. Kinoshita, T. Nagashima, T. Obata, S. Takashima, R. Yamamoto, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 6 Pages: 0610031-3
- DOI
  10.7567/apex.8.061003
- NAID
  210000137521
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Journal Article] Growth of Thick InGaN Layers by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  Takahide Hirasaki, Masato Ishikawa, Fumiaki Sakuma, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- NAID
  210000143862
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN2014
- Author(s)
  B. E. Gaddy, Z. Bryan, I. Bryan, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Kirste, Z. Sitar, R. Collazo, and D. L. Irving
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 20
- DOI
  10.1063/1.4878657
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360006
[Journal Article] Vacancy defects in UV-transparent HVPE-AlN2014
- Author(s)
  T. Kuittinen, F. Tuomisto, Y. Kumagai, T. Nagashima, T. Kinoshita, A. Koukitu, R. Collazo, and Z. Sitar
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 11 Issue: 3-4 Pages: 405-407
- DOI
  10.1002/pssc.201300529
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360006
[Journal Article] Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy2013
- Author(s)
  T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, S. Mita, S. Inoue, Y. Kumagai, A. Koukitu, and Z. Sitar
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 9 Pages: 092103-092103
- DOI
  10.7567/apex.6.092103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360006
[Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N22013
- Author(s)
  Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JB10-08JB10
- DOI
  10.7567/jjap.52.08jb10
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-24360006, KAKENHI-PROJECT-25390064
[Journal Article] Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates2013
- Author(s)
  Rie Togashi, Sho Yamamoto, K. Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JD05-08JD05
- DOI
  10.7567/jjap.52.08jd05
- NAID
  210000142640
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-25390064
[Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N22013
- Author(s)
  Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi, Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10-13) crystal on GaAs(110) by MOVPE2013
- Author(s)
  H.C.Cho, R.Togashi, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 367 Pages: 122-125
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10- 13) crystal on GaAs(110) by MOVPE2013
- Author(s)
  H.C. Cho, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 367 Pages: 122-125
- DOI
  10.1016/j.jcrysgro.2012.12.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008, KAKENHI-PROJECT-24656011, KAKENHI-PROJECT-25390064
[Journal Article] Vacancy compensation and related donor-acceptor pair recombination in bulk AlN2013
- Author(s)
  B. E. Gaddy, Z. Bryan, I. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, Z. Sitar, R. Collazo, and D. L. Irving
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Issue: 16
- DOI
  10.1063/1.4824731
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360006
[Journal Article] Thermodynamic analysis of InGaN-HVPE growth using group-III chlorides, bromides, and iodides2013
- Author(s)
  Takahide Hirasaki, Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai,, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 413-416
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase Epitaxy2013
- Author(s)
  Hisashi Murakami, Sae Takenaka, Tetsuro Hotta, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 472-475
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy2013
- Author(s)
  Hisashi Murakami, Sae Takenaka, Tetsuro Hotta, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 472-475
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy2012
- Author(s)
  Toru Kinoshita
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 12 Pages: 1221011-3
- DOI
  10.1143/apex.5.122101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686008, KAKENHI-PROJECT-24360006
[Journal Article] Influence of growth temperature on the twin formation of the InN{10-13} on GaAs(110) by metalorganic vapor phase epitaxy2012
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 9 Issue: 3-4 Pages: 677-680
- DOI
  10.1002/pssc.201100383
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H_2 and N_22012
- Author(s)
  Y. Kumagai, T. Igi, M. Ishizuki, R. Togashi, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol.350 Issue: 1 Pages: 60-65
- DOI
  10.1016/j.jcrysgro.2011.12.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009, KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport2012
- Author(s)
  Toru Nagashima
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 12 Pages: 1255011-3
- DOI
  10.1143/apex.5.125501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008, KAKENHI-PROJECT-24360006
[Journal Article] On the origin of the 265 nm absorption band in AlN bulk crystals2012
- Author(s)
  Ram Collazo
- Journal Title
  
  Applied Physics Letters
  
  Volume: 100 Issue: 19 Pages: 1919141-5
- DOI
  10.1063/1.4717623
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-24360006
[Journal Article] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport2012
- Author(s)
  Yoshinao Kumagai
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 5 Pages: 0555041-3
- DOI
  10.1143/apex.5.055504
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008, KAKENHI-PROJECT-24360006
[Journal Article] Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates2012
- Author(s)
  Toru Nagashima, Akira Hakomori, Takafumi Shimoda, Keiichiro Hironaka, Yuki Kubota, Toru Kinoshita, Reo Yamamoto, Kazuya Takada, Yoshinao Kumagai, Akinori Koukitu, Hiroyuki Yanagi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (印刷中) Issue: 1 Pages: 75-79
- DOI
  10.1016/j.jcrysgro.2011.12.027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates2012
- Author(s)
  Rie Togashi, Toru Nagashima, Manabu Harada, Hisashi Murakami, Yoshinao Kumagai, Hiroyuki Yanagi, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (印刷中) Pages: 197-200
- DOI
  10.1016/j.jcrysgro.2011.10.014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers2012
- Author(s)
  Rui Masuda, Chih-Wei Hsu, Martin Eriksson, Yoshinao Kumagai, Akinori Koukitu, Per-Olof Holtz
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 3R Pages: 031103-031103
- DOI
  10.1143/jjap.51.031103
- NAID
  210000140324
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] 窒化物化合物半導体の厚膜結晶成長技術-HVPE成長を中心にして-2012
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Journal Title
  
  鉱山
  
  Volume: 700 Pages: 25-34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy2012
- Author(s)
  J.A.Freitas Jr., J.C.Culbertson, M.A.Mastro, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Growth of semi-polar InN layer on GaAs (110) surface by MOVPE2011
- Author(s)
  Hisashi Murakami, Hyun Chol Cho, Mayu Suematsu, Rie Togashi, Yoshinao Kumagai, Ryuichi Toba, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Issue: 1 Pages: 479-482
- DOI
  10.1016/j.jcrysgro.2010.10.027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Theoretical study on the influence of surface hydrogen coverage on the initial growth process of AlN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Control of in-plane epitaxial relationship of c-plane AlN layers grown on a-plane sapphire substrates by hydride vapor phase epitaxy2011
- Author(s)
  J.Tajima, R.Togashi, H.Murakami, Y.Kumagai, K.Takada, A.Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamic analysis on HVPE growth of InGaN ternary alloy2011
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Pages: 441-445
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Control of in-plane epitaxial relationship of c-plane AlN layers grown on a-plane sapphire substrates by hydride vapor phase epitaxy2011
- Author(s)
  J. Tajima, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, and A. Koukitu
- Journal Title
  
  Physica Status Solidi(c)
  
  Volume: Vol.8No.7-8 Issue: 7-8 Pages: 2028-2030
- DOI
  10.1002/pssc.201000954
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009, KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Thermodynamic analysis on HVPE growth of InGaN ternary alloy2011
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Issue: 1 Pages: 441-445
- DOI
  10.1016/j.jcrysgro.2010.11.079
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments2011
- Author(s)
  Tetsuo Fujii, Naoki Yoshii, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 314 Issue: 1 Pages: 108-112
- DOI
  10.1016/j.jcrysgro.2010.11.097
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Tri-halide vapor phase epitaxy of GaN using GaCl_3 gas as a group III precursor2011
- Author(s)
  T.Yamane, K.Hanaoka, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 5 Pages: 1471-1474
- DOI
  10.1002/pssc.201000902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Carrier Gas Dependence at Initial Processes for a-Plane AlN Growth on r-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2011
- Author(s)
  Jumpei Tajima, Chikashi Echizen, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Jpn., J.Appl.Phys. 50
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of semi-polar InN layer on GaAs (110) surface by MOVPE2011
- Author(s)
  Hisashi Murakami, Hyun Chol Cho, Mayu Suematsu, Rie Togashi, Yoshinao Kumagai, Ryuichi Toba, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Pages: 479-482
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical study on the influence of surface hydrogen coverage on the initial growth process of AlN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 5 Pages: 1577-1580
- DOI
  10.1002/pssc.201000867
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] First-principles study on the effect of surface hydrogen coverage on the adsorption process of ammonia on InN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy2011
- Author(s)
  Rui Masuda, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Kouikitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 12R Pages: 125503-125503
- DOI
  10.1143/jjap.50.125503
- NAID
  40019141129
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas2011
- Author(s)
  H.C.Cho, M.Suematsu, H.Murakami, Y.Kumagai, R.Toba, A.Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas2011
- Author(s)
  H.C.Cho, M.Suematsu, H.Murakami, Y.Kumagai, R.Toba, A.Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 7-8 Pages: 2025-2027
- DOI
  10.1002/pssc.201000951
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Carrier Gas Dependence at Initial Processes for a-Plane AlN Growth on r-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2011
- Author(s)
  J. Tajima, C. Echizen, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, and A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50, No.5 Issue: 5R Pages: 055501-055501
- DOI
  10.1143/jjap.50.055501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009, KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Tri-halide vapor phase epitaxy of GaN using GaCl_3 gas as a group III precursor2011
- Author(s)
  T.Yamane, K.Hanaoka, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First-principles study on the effect of surface hydrogen coverage on the adsorption process of ammonia on InN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 7-8 Pages: 2267-2269
- DOI
  10.1002/pssc.201000896
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy2010
- Author(s)
  Yoshinao Kumagai, Hirokazu Adachi, Aya Otake, Yoshihiro Higashikawa, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 7 Pages: 2022-2024
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of substrate polarity of (0001) and (0001)GaN surfaces on hydride vapor-phase epitaxy of InN2010
- Author(s)
  Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 651-655
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HYPE2010
- Author(s)
  Y.Kumagai, Y.Enatsu, M.Ishizuki, Y.Kubota, J.Tajima, T.Nagashima, H.Murakami, K.Takada, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 2530-2536
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009
[Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlNlayers grown by HVPE2010
- Author(s)
  Yoshinao Kumagai, Yuuki Enatsu, Masanari Ishizuki, Yuki Kubota, Jumpei Tajima, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 2530-2536
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE2010
- Author(s)
  Y. Kumagai, Y. Enatsu, M. Ishizuki, Y. Kubota, J. Tajima, T. Nagashima, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol.312 Issue: 18 Pages: 2530-2536
- DOI
  10.1016/j.jcrysgro.2010.04.008
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009
[Journal Article] Selective growth of InN on patterned GaAs(111)B substrate-influence of InN decomposition at the interface2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 7 Pages: 2019-2021
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical investigation of the decomposition mechanism of AlN(0001) surface under a hydrogen atmosphere2010
- Author(s)
  Hikari Suzuki, Uliana Panyukova, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 7 Pages: 2265-2267
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE2010
- Author(s)
  Yoshinao Kumagai, Yuuki Enatsu, Masanari Ishizuki, Yuki Kubota, Jumpei Tajima, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 2530-2536
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Measurement of misorientation of AIN layer grown on (111)Si for freestanding substrate2009
- Author(s)
  K.Saito, J.Tajima, Y.Kumagai, M.Ishizuki, K.Takada, H.Morioka, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450℃2009
- Author(s)
  Jumpei Tajima, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2837-2839
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Ab initio calculation for an initial growth process of GaN on(0001)and(000-1)surfaces by vapor phase epitaxy2009
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001)Si Face2009
- Author(s)
  Kazuhiro Akiyama, Yasuhiro Ishii, Sohei Abe, Hisashi Murakami, Yoshinao Kumagai, Hironori Okumura, Tsunenobu Kimoto, Jun Suda, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  40016743032
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy2009
- Author(s)
  Toru Nagashima, Keiichiro Hironaka, Masanari Ishizuki, Yoshinao Kumagai, Akinori Koukitu, Kazuya Takada
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of substrate polarity of(0001)and(000-1)GaN surfaces on hydride vap or-phase epitaxy of InN2009
- Author(s)
  Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 651-6550
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical investigation on the decomposition process of GaN(0001)surface under a hydrogen atmosphere2009
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3103-3105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of polarity dependent InN{0001}decomposition in N_2 and H_2 ambient2009
- Author(s)
  R.Togashi, T.Kamoshita, H.Adachi, H. Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ gravimetric monitoring of surface reactions between sapphire and NH_32009
- Author(s)
  Kazuhiro Akiyama, Yasuhiro Ishii, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3110-3113
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Controlled formation of voids at the AlN/sapphire interface by sapphire decomposition for self-separation of the AlN layer2009
- Author(s)
  J.Tajima, Y.Kubota, M.Ishizuki, T.Nagashima, R.Togashi, H.Murakami, Y.Kumagai, K.Takada, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity control and preparation of AIN nano-islands by hydride vapor phase epitaxy2009
- Author(s)
  T. Nagashima, K. Hironaka, M. Ishizuki, Y. Kumagai, A. Koukitu, K. Takada
- Journal Title
  
  Physica Status Solidi(c) (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure2008
- Author(s)
  H. Murakami, H.-C. Cho, Y. Kumagai, A Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4954-4958
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of thin protective AIN layers on sapphire substrates at 1065℃ for hydride vapor phase epitaxy of AIN above 1300 ℃2008
- Author(s)
  J. Tajima, Y. Kubota, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 1515-1517
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-Temperature Growth of Nonpolar AlN2008
- Author(s)
  K. Akiyama, H. Murakami, Y. Kumagai, and A. Koukitu
- Journal Title
  
  Jpn. J. Appl. Phys 47
  
  Pages: 3434-3437
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire2008
- Author(s)
  Yoshinao Kumagai, Jumpei Tajima, Masanari Ishizuki, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Appl.Phys.Express 1
- NAID
  210000013992
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-Temperature Growth of Nonpolar AIN2008
- Author(s)
  K. Akiyama, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3434-3437
- NAID
  40016057214
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Ab initio calculation for the decomposition process of_GaN (0001) and (000-1) surfaces2008
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1632-1636
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111) A grown by metalorganic vapor phase epitaxy2008
- Author(s)
  H. Murakami, J. Torii, H.-C. Cho, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1602-1606
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First principles study of the decomposition processes of AIN in ahydrogen atmosphere2008
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 3042-3044
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] High-temperature growth of thick AIN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy2008
- Author(s)
  K. Eriguchi, T. Hiratsuka, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4016-4019
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Experimental and ab-initio studies of temperature dependent InN decomposition in various ambient2008
- Author(s)
  R. Togashi, T. Kamoshita, Y. Nishizawa, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 1518-1521
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Self-Separation of a Thick AIN Layer from a Sapphire Substratevia Interfacial Voids Formed by the Decomposition of Sapphire2008
- Author(s)
  Y. Kumagai, J. Tajima, M. Ishizuki, T. Nagashima, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Applied Physics Express 1
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Characterization of a freestanding AIN substrate prepared by hydride vapor phase epitaxy2008
- Author(s)
  Y. Kumagai, T. Nagashima, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 1512-1514
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-temperature Growth of Nonpolar AIN2008
- Author(s)
  K. Akiyama, H. Murakami, Y. Kumagai, and A. Koukitu
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 3434-3437
- NAID
  40016057214
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of surface atom arrangement on the growth of InN layers on GaAs (111)A and (111)B surfaces by metalorganic vapor phase epitaxy2007
- Author(s)
  H.Murakami, J.Torii, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 387-389
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] A new system for growing thick InN layers by hydride vapor phase epitaxy2007
- Author(s)
  J. Kikuchi, Y. Nishizawa, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Pysica State Solide 4
  
  Pages: 2419-2422
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvement of AIN crystalline quality with high epitaxial growth ratc by hydridc vapor phase epitaxy2007
- Author(s)
  T. Nagashima, M. Harada, A. Hakomori, H, Yanagi, H. Fukuyama, Y. Kumagai, A. Koukitu, K. Takada
- Journal Title
  
  Journal of Crystal Growth 305
  
  Pages: 355-359
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 ℃ Using (111)Si as a Starting Substrate2007
- Author(s)
  Y.Kumagai, T.Nagashima, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46 No. 17
- Data Source
  KAKENHI-PROJECT-17760007
[Journal Article] Theoretical Analysis for Surface Reconstruction of AIN and InN in the Presence of Hydrogen2007
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 5112-5115
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] HVPE growth of AlxGa1-xN ternary alloy using AlCl3 and GaCl2007
- Author(s)
  Akinori Koukitu, Fumitaka Satoh, Takayoshi Yamane, Hisashi Murakami, Yoshinao Kumagai
- Journal Title
  
  J.Cryst.Growth 305
  
  Pages: 335-339
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl_3 using In metal and Cl_22007
- Author(s)
  Y.Kumagai, J.Kikuchi, Y.Nishizawa, H.Murakami, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.300
  
  Pages: 57-61
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] High-speed epitaxial growth AIN above 1200 ºC by hydride vapor phase epitaxy2007
- Author(s)
  T. Nagashima, M. Harada, H. yanagi, Y. kumagai, A. Koukitu, K.Takada
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 42-44
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First-Principles Calculation and X-ray Absorption Fine Structure Analys is of Fc Doping Mcchanism for Scomi-Inaulating CaN Crowth on GaAs Substrates2007
- Author(s)
  R. Togashi, F. Sato, H. Murakami, J. Iihara, K. Yamaguchi, Y. Kumagai, A. Koukitu
- Journal Title
  
  Pysica State Solide 244
  
  Pages: 1862-1866
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Al- and N-polar AIN laters layers on c-plane sapphire substrates by modified flow-modulation MOCVD2007
- Author(s)
  M. Takeuchi, H. Shimizu, R.Kajitami, K. Kawasaki, T.Kinoshita, K. Takada, H. Murakami, Y.Kumagai, Y. Kumagai, A. Koukitu, T. Koyama, S.F.Chichibue, Y. Aoyagi
- Journal Title
  
  Jpn. J. Appl. Phys. 305
  
  Pages: 360-365
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ GraVimetric Monitoring of Decomposition Rate on the Surface of (0001) c-plane Sapphire for the High Temperature Growth of AIN2007
- Author(s)
  K. Akiyama, T. Araki, H. Murakami, Y. kumagai, and A. koukitu
- Journal Title
  
  Pysica State Solide 4
  
  Pages: 2297-2300
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl22007
- Author(s)
  Y. Kumagai, J. Kikuchi, Y. Nishizawa, H; Murakami, and A Koukitu
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 57-61
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] High-speed epitaxial growth of AlN above 1200℃ by hydride vapor phase epitaxy2007
- Author(s)
  T.Nagashima, M.Harada, H.Yanagi, Y.Kumagai, A.Koukitu, K.Takada
- Journal Title
  
  Journal of Crystal Growth Vol.300
  
  Pages: 42-44
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Ab initio calculation for the decomposition proces of GaN (0001) and (000-1) surfaces2007
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai and A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1632-1636
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] HVPE growth of AlxGal-xN tcrnory alloy using ALCl3 and GaCl2007
- Author(s)
  Akinori Koukitu, Takayoshi Yamane, Fumitaka Satoh, Hisashi Murakami, Yoshinao Kumagai
- Journal Title
  
  Journal of Crystal Growth 305
  
  Pages: 335-339
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] MOVPE-like HVPE of AIN using solid aluminum trichloride source2007
- Author(s)
  K.Eriguchi, H.Murakami, U.Panyukova, Y.Kumagai, S.Ohira, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 332-335
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl22007
- Author(s)
  Yoshinao Kumagai, Jun Kikuchi, Yuuki Nishizawa, Hisashi Murakami, Akinori Koukitu
- Journal Title
  
  J.Cryst.Growth 300
  
  Pages: 57-61
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity dependence of AIN {0001} decomposition in flowing H22007
- Author(s)
  Y. Kumagai, K. Akiyama, R. Togashi, H. Murakami, M. Takeuchi, T. Kinoshita, K. Takada, Y. Aoyagi, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 305
  
  Pages: 366-371
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230℃ Using (111)Si as a Starting Substrate2007
- Author(s)
  Yoshinao Kumagai, Toru Nagashima, Akinori Koukitu
- Journal Title
  
  Jpn.J.Appl.Phys. 46
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of thick Al_xGa_<1-x>N ternary alloy by hydride vapor phase epitaxy2007
- Author(s)
  T.Yamane, F.Satoh, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.300
  
  Pages: 164-167
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of thick AlxGal-xN ternary alloy by hydride vapor phase epitaxy2007
- Author(s)
  T. Yamane, F. Satoh, H. Murakami, Y. Kumagai and A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 164-167
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl_3 and NH_32006
- Author(s)
  Y.Kumagai, K.Takemoto, J.Kikuchi, T.Hasegawa, H.Murakami, A.Koukitu
- Journal Title
  
  physica status solidi (b) Vol.243
  
  Pages: 1431-1435
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates2006
- Author(s)
  Y.Kumagai, F.Satoh, R.Togashi, H.Murakami, K.Takemoto, J.Iihara, K.Yamaguchi, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.296
  
  Pages: 11-14
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamic analysis of various types of hydride vapor phase epitaxy systems for high-speed growth of InN2006
- Author(s)
  J.Kikuchi, Y.Nishizawa, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics Vol.45
- NAID
  10018632545
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates2006
- Author(s)
  Y.Kumagai, F.Satoh, R.Togashi, H.Murakami, K.Takemoto, J.Iihara, K.Yamaguchi, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol. 296
  
  Pages: 11-14
- Data Source
  KAKENHI-PROJECT-17760007
[Journal Article] Thermodynamic study on the role of hydrogen during hydride vapor phase epitaxy of Al_x Ga_<1-x>N2006
- Author(s)
  H.Murakami, J.Kikuchi, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) Vol.3
  
  Pages: 1457-1460
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates2005
- Author(s)
  K.Takemoto, Y.Kumagai, H.Murakami, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44 No.50
- NAID
  10016920515
- Data Source
  KAKENHI-PROJECT-17760007
[Journal Article] Polarity dependence of AlN {0 0 0 1} decomposition in flowing H_2
- Author(s)
  Y.Kumagai, K.Akiyama, R.Togashi, H.Murakami, M.Takeuchi, T.Kinoshita, K.Takada, Y.Aoyagi, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PROJECT-17760007
[Journal Article] A new system for growing thick InN layers by hydride vapor phase epitaxy
- Author(s)
  J.Kikuchi, Y.Nishizawa, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on the Surface of (0001) c-plane Sapphire for the High Temperature Growth of AIN
- Author(s)
  K.Akiyama, T.Araki, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvement of crystalline quality for Al- and N-polar AlN layers by modified flow-modulation MOCVD growth
- Author(s)
  M.Takeuchi, H.Shimizu, R.Kajitani, K Kawasaki, T.Kinoshita, K.Takada, H.Murakami, Y.Kumagai, A.Koukitu, Y.Aoyagi
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl_3 and NH_3
- Author(s)
  Y.Kumagai, K.Takemoto, J.Kikuchi, T.Hasegawa, H.Murakami, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 印刷中
- Data Source
  KAKENHI-PROJECT-17760007
[Journal Article] First-Principles Calculation and X-ray Absorption Fine Structure Analysis of Fe Doping Mechanism for Semi-Insulating GaN Growth on GaAs Substrates
- Author(s)
  R.Togashi, F.Sato, H.Murakami, J.Iihara, K.Yamaguchi, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvement of AlN crystalline quality with high epitaxial growth rate by hydride vapor phase epitaxy
- Author(s)
  T.Nagashima, M.Harada, A.Hakomori, H, Yanagi, H.Fukuyama, Y.Kumagai, A.Koukitu, K.Takada
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] RF-MBE growth of 2H-AlN templates by using a mode change MEE on Si(111) for HVPE growth
- Author(s)
  T.Ohachi, H.Shimomura, N.Yamabe, T.Yamane, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity dependence of AlN {0001} decomposition in flowing H_2
- Author(s)
  Y.Kumagai, K.Akiyama, R.Togashi, H.Murakami, M.Takeuchi, T.Kinoshita, K.Takada, Y.Aoyagi, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] HVPE growth of Al_xGa_<1-x>N ternary alloy using AlCl_3 and GaCl
- Author(s)
  A.Koukitu, T.Yamane, F.Satoh, H.Murakami, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication
- Author(s)
  J.A.Freitas, Jr., J.G Tischler, J-H.Kim, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 酸化物半導体結晶Ga2O3およびIn2O3の準安定相発現機構の検討2021
- Author(s)
  熊谷義直，後藤健，富樫理恵，山口智広，村上尚
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Thermodynamic study of etching characteristics of HVPE-grown In2O3 layers by hydrogen-environment anisotropic thermal etching2021
- Author(s)
  Rie Togashi, Ryo Kasaba, Yuki Ooe, Ken Goto, Yoshinao Kumagai, Akihiko Kikuchi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Growth of stable and/or metastable phases of Ga2O3 and In2O3 by halide vapor phase epitaxy and mist chemical vapor deposition2021
- Author(s)
  Yoshinao Kumagai, Ken Goto, Rie Togashi, Tomohiro Yamaguchi, Hisashi Murakami
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Epitaxial mist chemical vapor deposition growth and characterization of α-In2O3 films on α-Al2O3 substrates2021
- Author(s)
  Tomohiro Yamaguchi, Takahiro Nagata, Subaru Takahashi, Takanori Kiguchi, Atsushi Sekiguchi, Takeyoshi Onuma, Tohru Honda, Ken Goto, Yoshinao Kumagai, Kentaro Kaneko, Shizuo Fujita
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Thermodynamic study of (AlxGa1-x)2O3 ternary alloy growth by metalorganic vapor phase epitaxy2020
- Author(s)
  Nami Tanaka, Saori Matsugai, Sakiko Yamanobe, Nao Takekawa, Ken Goto, Yoshinao Kumagai
- Organizer
  The 8th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Thermodynamic analysis of metalorganic vapor phase epitaxy of group-III sesquioxides2020
- Author(s)
  Saori Matsugai, Nami Tanaka, Sakiko Yamanobe, Nao Takekawa, Ken Goto, Yoshinao Kumagai
- Organizer
  The 8th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性評価2020
- Author(s)
  富樫理恵，笠羽遼，大江優輝，長井研太，後藤健，熊谷義直，菊池昭彦
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 水素雰囲気異方性熱エッチング (HEATE)法による HVPE-In2O3成長層のエッチング特性評価2020
- Author(s)
  富樫理恵，笠羽遼，大江優輝，後藤健，熊谷義直，菊池昭彦
- Organizer
  Sophia Open Research Weeks 2020半導体ナノフォトニクス研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Halide Vapor Phase Epitaxy of Group-III Sesquioxides2020
- Author(s)
  Yoshinao Kumagai, Ken Goto, Rie Togashi, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki
- Organizer
  2020 Virtual MRS Spring Meeting & Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性の熱力学的検討2020
- Author(s)
  富樫理恵，笠羽遼，大江優輝，後藤健，熊谷義直，菊池昭彦
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] In2O3及びGa2O3のHVPE成長におけるIII族原料の熱力学的比較2019
- Author(s)
  田中那実，税本雄也，長井研太，富樫理恵，竹川直，後藤健，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Growth of Single Crystalline c-In2O3(111) Layers on Off-Axis c-Plane Sapphire Substrates by Halide Vapor Phase Epitaxy2019
- Author(s)
  Yuya Saimoto, Kenta Nagai, Hidetoshi Nakahata, Keita Konishi, and Yoshinao Kumagai
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] GaCl-O2-N2系およびGaCl3-O2-N2系によるε-Ga2O3気相成長の比較2019
- Author(s)
  佐藤万由子，竹川直，村上尚，熊谷義直
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Study on halide vapor phase epitaxy growth of twin-free cubic-indium oxide and its carrier properties2019
- Author(s)
  Ken Goto, Kenta Nagai, Yuya Saimoto, Nami Tanaka, Nao Takekawa, Rie Togashi, and Yoshinao Kumagai
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] GaCl及びGaCl3をGa源とするGa2O3 HVPE成長の熱力学解析2019
- Author(s)
  加茂崇，三浦遼，竹川直，富樫理恵，後藤健，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Investigation of Thermal and Chemical Stabilities of (001), (010), and (-201) β-Ga2O3 substrates in a flow of either N2 or H22019
- Author(s)
  R. Togashi, S. Yamanobe, K. Goto, H. Murakami, S. Yamakoshi, and Y. Kumagai
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] HVPE法で成長したサファイア基板上In2O3単結晶薄膜の電気伝導特性2019
- Author(s)
  後藤健，長井研太，税本雄也，田中那実，竹川直，富樫理恵，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Influence of substrate constraint on the emergence of metastable α-Ga2O32019
- Author(s)
  Chika Ohashi, Takashi Kamo, Ryo Miura, Nao Takekawa, Rie Togashi, Ken Goto, and Yoshinao Kumagai
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Comparison of thermodynamics on growth of In2O3 and Ga2O3 by halide vapor phase epitaxy using mono- and tri-halides2019
- Author(s)
  Nami Tanaka, Yuya Saimoto, Kenta Nagai, Rie Togashi, Nao Takekawa, Ken Goto, and Yoshinao Kumagai
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Investigation of Etching Characteristics of HVPE-Grown In2O3 Layers by Hydrogen-Environment Anisotropic Thermal Etching2019
- Author(s)
  Ryo Kasaba, Yuki Ooe, Kenta Nagai, Ken Goto, Rie Togashi, Akihiko Kikuchi, and Yoshinao Kumagai
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] トリハライド気相成長法によるa面sapphire基板上へのε-Ga2O3成長2019
- Author(s)
  江間研太郎，竹川直，後藤健，村上尚，熊谷義直
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] In2O3のハライド気相成長におけるIn原料分子種の影響2019
- Author(s)
  長井研太，田中那実，税本雄也，富樫理恵，竹川直，後藤健，熊谷義直
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Ga源にGaCl3又はGaClを用いるGa2O3 HVPE成長の熱力学解析2019
- Author(s)
  加茂崇，三浦遼，竹川直，富樫理恵，後藤健，熊谷義直
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] トリハライド気相成長法によるε-Ga2O3成長のsapphire基板面方位依存性2019
- Author(s)
  江間研太郎，竹川直，後藤健，村上尚，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] THVPE法を用いたc面サファイア基板上酸化ガリウム成長における準安定相の相制御2019
- Author(s)
  竹川直，佐藤万由子，村上尚，熊谷義直
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Thermodynamic study on halide vapor phase epitaxy of Ga2O3 using GaCl or GaCl3 as a group-III precursor2019
- Author(s)
  T. Kamo, R. Miura, N. Takekawa, R. Togashi, K. Goto, and Y. Kumagai
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] β-Ga2O3(001), (010), (-201)基板の熱的・化学的安定性の面方位依存性2019
- Author(s)
  富樫理恵，山野邉咲子，後藤健，村上尚，山腰茂伸，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 水素・窒素気流中におけるβ-Ga2O3(001)，(010)，(-201)基板の熱的・化学的安定性の検討2019
- Author(s)
  富樫理恵，山野邉咲子，後藤健，村上尚，山腰茂伸，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Thermodynamic and experimental analyses of β-Ga2O3 growth by ozone molecular beam epitaxy2018
- Author(s)
  N. Ueda, Y. Sawada, K. Konishi, Y. Nakata, M. Higashiwaki, and Y. Kumagai
- Organizer
  International Conference on Light-Emitting Devices and Their Industrial Applications ’18 (LEDIA ’18)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] c面サファイアoff基板を用いたc-In2O3(111)単結晶のHVPE成長2018
- Author(s)
  長井研太，中畑秀利，小西敬太，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] ハライド気相成長法におけるサファイアoff基板上への単結晶c-In2O3成長2018
- Author(s)
  長井研太，中畑秀利，小西敬太，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] HVPE法によるc面サファイア基板上ε-酸化ガリウム成長における酸素分圧及び成長温度の影響2018
- Author(s)
  竹川直，佐藤万由子，村上尚，熊谷義直
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Thermodynamics on (AlxGa1-x)2O3 growth by ozone molecular beam epitaxy2018
- Author(s)
  Natsuki Ueda, Yohei Sawada, Keita Konishi, and Yoshinao Kumagai
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-19)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] MOVPE法によるGa2O3成長の熱力学解析2018
- Author(s)
  山野邉咲子，吉田健人，小西敬太，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Heteroepitaxial growth of ε-Ga2O3 thin films on c-plane sapphire and GaN templates by HVPE2018
- Author(s)
  Mayuko Sato, Nao Takekawa, Keita Konishi, Hisashi Murakami, and Yoshinao Kumagai
- Organizer
  International Conference on Light-Emitting Devices and Their Industrial Applications ’18 (LEDIA ’18)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 有機金属気相成長法を用いた酸化ガリウム結晶成長の熱力学解析2018
- Author(s)
  山野邉咲子，吉田健人，小西敬太，熊谷義直
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] HVPE法によるサファイアおよびGaNテンプレート上ε-Ga2O3膜の成長2018
- Author(s)
  佐藤万由子，竹川直，小西敬太，村上尚，熊谷義直
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Thermodynamic analysis on Ga2O3 growth by metalorganic vapor phase epitaxy2018
- Author(s)
  Sakiko Yamanobe, Kento Yoshida, Keita Konishi, and Yoshinao Kumagai
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-19)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] c面sapphire基板上c-In2O3のHVPE成長における成長速度の影響2017
- Author(s)
  長井研太，須賀隆之，中畑秀利，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第6回結晶工学未来塾
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Temperature dependence of In2O3 growth on (0001) sapphire by HVPE2017
- Author(s)
  Takayuki Suga, Shiyu Numata, Rie Togashi, Hisashi Murakami, Bo Monemar, and Yoshinao Kumagai
- Organizer
  International Conference on Light-Emitting Devices and Their Industrial Applications '17 (LEDIA ’17)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] エッチピットを用いたMOVPE AlNテンプレートの貫通転位評価2017
- Author(s)
  樋口真里，三井太朗，永島徹，木下亨，山本玲緒，小西敬太，Bo Monemar，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Preparation of bulk AlN substrates by hydride vapor phase epitaxy2017
- Author(s)
  Yoshinao Kumagai
- Organizer
  International Workshop on UV Materials and Devices 2017 (IWUMD 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] 分子線エピタキシー法を用いたGa2O3結晶成長の特異性2017
- Author(s)
  佐和田陽平，上田菜月，小西敬太，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第6回結晶工学未来塾
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Development of bulk AlN substrates for deep-UV optoelectronic devices by HVPE method2017
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramon Collazo, Akinori Koukitu, Bo Monemar, and Zlatko Sitar
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Influence of ambient oxygen on Si incorporation during hydride vapor phase epitaxy of AlN at high temperature2017
- Author(s)
  Keita Konishi, Reo Yamamoto, Rie Togashi, Toru Nagashima, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramon Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] ハライド気相成長法による(0001)サファイア基板上準安定相α-Ga2O3成長の検討2017
- Author(s)
  下川道貴，佐和田陽平，小西敬太，村上尚，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Temperature-Dependent Growth of Ga2O3 on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy2017
- Author(s)
  M. Shimokawa, Y. Sawada, K. Konishi, H. Murakami, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Halide Vapor Phase Epitaxy of β-Ga2O3 Homoepitaxial Layers Using O2 and H2O as Oxygen Sources2017
- Author(s)
  K. Konishi, K. Goto, R. Togashi, H. Murakami, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] HVPE法を用いたc面サファイア基板上Ga2O3成長の温度依存性の調査2017
- Author(s)
  下川道貴，佐和田陽平，小西敬太，村上尚，Bo Monemar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第6回結晶工学未来塾
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Wet chemical etching of MOVPE-AlN templates for evaluation of threading dislocations2017
- Author(s)
  Taro Mitsui, Mari Higuchi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Bo Monemar, and Yoshinao Kumagai
- Organizer
  International Conference on Light-Emitting Devices and Their Industrial Applications ’17 (LEDIA ’17)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] ハライド気相成長法によるIn2O3成長の温度依存性2017
- Author(s)
  中畑秀利，須賀隆之，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Thermodynamic analysis on molecular beam epitaxy of Ga2O32017
- Author(s)
  Yohei Sawada, Natsuki Ueda, Keita Konishi, and Yoshinao Kumagai
- Organizer
  International Workshop on UV Materials and Devices 2017 (IWUMD 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 高品質窒化アルミニウムのハイドライド気相成長におけるSiドープ量制御2017
- Author(s)
  小西敬太，山本玲緒，富樫理恵，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，村上尚，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE法を用いたIn2O3成長における成長速度の影響2017
- Author(s)
  須賀隆之，中畑秀利，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Characterization of threading dislocations in HVPE-grown AlN substrates by wet chemical etching2017
- Author(s)
  Taro Mitsui, Mari Higuchi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Galia Pozina, Rafael Dalmau, Raoul Schlesser, Ramon Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Influence of Growth Rate on Halide Vapor Phase Epitaxy of c-In2O3 on c-Plane Sapphire Substrates2017
- Author(s)
  T. Suga, H. Nakahata, K. Konishi, R. Togashi, H. Murakami, P. P. Paskov, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 高温AlN-HVPEにおける系内酸素がSiドープ量に与える影響2017
- Author(s)
  小西敬太，山本玲緒，富樫理恵，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，村上尚，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] 分子線エピタキシー法によるGa2O3結晶成長の熱力学解析2017
- Author(s)
  佐和田陽平，上田菜月，小西敬太，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] エッチピットを用いたHVPE-AlN基板の貫通転位評価2017
- Author(s)
  樋口真里，三井太朗，永島徹，山本玲緒，小西敬太，Galia Pozina，Rafael Dalmau，Raoul Schlesser，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Defect selective etching of MOVPE grown AlN and HVPE grown bulk AlN substrates in a molten KOH/NaOH eutectic2017
- Author(s)
  Mari Higuchi, Taro Mitsui, Toru Nagashima, Reo Yamamoto, Keita Konishi, Galia Pozina, Rafael Dalmau, Raoul Schlesser, Ramon Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
- Organizer
  International Workshop on UV Materials and Devices 2017 (IWUMD 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] 異なる酸素源を用いた酸化ガリウムハライド気相成長の比較2017
- Author(s)
  小西敬太，後藤健，富樫理恵，村上尚，東脇正高，倉又朗人，山腰茂伸，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] ハライド気相成長法によるc-In2O3の高温成長2016
- Author(s)
  沼田至優，富樫理恵，林田真由子，須賀隆之，後藤健，倉又朗人，山腰茂伸，Plamen Paskov，Bo Monemar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第5回結晶工学未来塾
- Place of Presentation
  東京農工大学小金井キャンパス（東京都小金井市）
- Year and Date
  2016-11-07
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Growth of AlN substrates by hydride vapor phase epitaxy for opto-electronic devices2016
- Author(s)
  T. Kinoshita, T. Nagashima, T. Obata, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, Z. Sitar
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center（愛知県名古屋市熱田区）
- Year and Date
  2016-08-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE法AlN単結晶基板表面のSi蓄積の原因調査および制御の検討2016
- Author(s)
  佐藤圭介，寺尾真人，三井太朗，山本玲緒，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，纐纈明伯，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第5回結晶工学未来塾
- Place of Presentation
  東京農工大学小金井キャンパス（東京都小金井市）
- Year and Date
  2016-11-07
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Progress of homoepitaxial growth technique of thick β-Ga2O3 layers by halide vapor phase epitaxy2016
- Author(s)
  Y. Kumagai, K. Nomura, K. Goto, Q.-T. Thieu, R. Togashi, K. Sasaki, K. Konishi, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu, M. Higashiwaki
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center（愛知県名古屋市熱田区）
- Year and Date
  2016-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] HVPE法によるn形AlNバルク基板作製の検討2016
- Author(s)
  熊谷義直，富樫理恵，山本玲緒，永島徹，木下亨，村上尚，Monemar Bo，纐纈明伯
- Organizer
  応用物理学会結晶工学分科会第145回研究会
- Place of Presentation
  名古屋大学東山キャンパス（愛知県名古屋市千種区）
- Year and Date
  2016-06-03
- Invited
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Recent Progress in the Growth of AlN by HVPE on Native AlN Substrates2016
- Author(s)
  T. Kinoshita, T. Nagashima, T. Obata, R. Togashi, R. Schlesser, R. Collazo, A. Koukitu, Y. Kumagai and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN 2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, FL, U.S.A.
- Year and Date
  2016-10-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE法によるn型AlN基板作製と縦型ショットキーダイオードへの適用2015
- Author(s)
  山本玲緒，木下亨，永島徹，小幡俊之，高島信也，富樫理恵，熊谷義直，Raoul Schlesser，Ramon Collazo，纐纈明伯，Zlatko Sitar
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE法によるSiドープn形AlN基板作製と縦型ショットキーバリアダイオード試作への適用2015
- Author(s)
  寺尾真人，山本玲緒，木下亨，永島徹，小幡俊之，高島信也，富樫理恵，村上尚，Raoul Schlesser，Ramon Collazo，纐纈明伯，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  第45回結晶成長国内会議（NCCG-45）
- Place of Presentation
  北海道大学学術交流会館（北海道札幌市）
- Year and Date
  2015-10-20
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE growth of AlN substrates for opto-electronic applications2015
- Author(s)
  Toru Kinoshita, Toru Nagashima, Toshiyuki Obata, Shinya Takashima, Reo Yamamoto, Rie Togashi, Yoshinao Kumagai, Raoul Schlesser, Ramon Collazo, Akinori Koukitu, and Zlatko Sitar
- Organizer
  The 2015 E-MRS Fall Meeting and Exhibit
- Place of Presentation
  Warsaw University of Technology, Warsaw, Poland
- Year and Date
  2015-09-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] High-purity and highly-transparent AlN bulk crystal growth for UVC LED application by HVPE2015
- Author(s)
  Y. Kumagai, T. Nagashima, T. Kinoshita, R. Togashi, R. Yamamoto, B. Moody, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
- Organizer
  2015 Photonics West
- Place of Presentation
  The Moscone Center, San Francisco, California, U.S.A.
- Year and Date
  2015-02-09
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy2015
- Author(s)
  R. Yamamoto, T. Kinoshita, T. Nagashima, T. Obata, S. Takashima, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu（静岡県浜松市）
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Properties of point defects in AlN and high Al content AlGaN2015
- Author(s)
  Benjamin E. Gaddy, Zachary Bryan, Isaac Bryan, Joshua S. Harris, Kelsey J. Mirrielees, Brian D. Behrhorst, Jonathon N. Baker, Ronny Kirste, Toru Kinoshita, Yoshinao Kumagai, Akinori Koukitu, Ramon Collazo, Zlatko Sitar, Douglas L. Irving
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu（静岡県浜松市）
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Growth of Si-Doped AlN Layers by Hydride Vapor Phase Epitaxy2014
- Author(s)
  R. Tanaka, S. Tojo, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Centennial Hall, Wroclaw, Poland
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] AlN高温HVPE成長における基板昇降温プロセスが表面に与える影響2014
- Author(s)
  東城俊介，田中凌平，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学天白キャンパス（愛知県名古屋市）
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] AlN/sapphireテンプレート上へのSiドープAlN層のHVPE成長の検討2014
- Author(s)
  田中凌平，東城俊介，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学天白キャンパス（愛知県名古屋市）
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] High-Speed Growth of InN over 10 μm/h by a Novel HVPE System2014
- Author(s)
  N. Fujita, R. Imai, H. Saito, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] AlNのHVPE高温ホモエピタキシャル成長における基板昇降温時表面劣化の原因2014
- Author(s)
  東城俊介，田中凌平，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道札幌市）
- Year and Date
  2014-09-17
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy2014
- Author(s)
  木下亨，小幡俊之，永島徹，柳裕之，Baxter Moody，三田清二，井上振一郎，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道札幌市）
- Year and Date
  2014-09-18
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE法によるAlN/sapphireテンプレート上へのSiドープAlN成長の検討2014
- Author(s)
  田中凌平，東城俊介，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  応用物理学会第3回結晶工学未来塾
- Place of Presentation
  学習院創立百周年記念会館（東京都豊島区）
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Investigation of Ambient Gas after High-Temperature Growth of AlN by Hydride Vapor Phase Epitaxy2014
- Author(s)
  S. Tojo, R. Tanaka, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Centennial Hall, Wroclaw, Poland
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications2014
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Deep UV-LEDs Fabricated of on HVPE-AlN Substrates2014
- Author(s)
  T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  5th International Symposium on Growth of III-Nitrides
- Place of Presentation
  The Westin Peachtree Plaza, Atlanta, Georgia, U.S.A.
- Year and Date
  2014-05-21
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Predicted Properties of Point Defects and Complexes in AlN and AlGaN2014
- Author(s)
  B. E. Gaddy, Z. Bryan, I. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Collazo, Z. Sitar and D. L. Irving
- Organizer
  2014 MRS Fall Meeting and Exhibit
- Place of Presentation
  Hynes Convention Center, Boston, Massachusetts, U.S.A.
- Year and Date
  2014-12-04
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Hydride Vapor Phase Epitaxy and Doping of AlN2014
- Author(s)
  Y. Kumagai, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
- Organizer
  5th International Symposium on Growth of III-Nitrides
- Place of Presentation
  The Westin Peachtree Plaza, Atlanta, Georgia, U.S.A.
- Year and Date
  2014-05-19
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Growth of AlN by Hydride Vapor Phase Epitaxy2014
- Author(s)
  Y. Kumagai, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Centennial Hall, Wroclaw, Poland
- Year and Date
  2014-08-26
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE法によるAlN単結晶自立基板の作製とそのデバイス応用2014
- Author(s)
  熊谷義直，永島徹，木下亨，村上尚，纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学天白キャンパス（愛知県名古屋市）
- Year and Date
  2014-07-25
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System2014
- Author(s)
  R. Togashi, N. Fujita, R. Imai, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Growth of Semi-polar InN Layers on GaAs(311)A and (311)B by MOVPE2014
- Author(s)
  Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Characterizing The Role of Point Defects and Complexes in UV Absorption and Emission in AlN2014
- Author(s)
  B. E. Gaddy, Z. A. Bryan, I. S. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Collazo, Z. Sitar and D. L. Irving
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Centennial Hall, Wroclaw, Poland
- Year and Date
  2014-08-27
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] MOCVD growth of AlGaN alloy for DUV-LEDs2014
- Author(s)
  T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, S. Inoue, Y. Kumagai, A. Koukitu, R. Collazo, and Z. Sitar
- Organizer
  17th International Conference on Metalorganic Vapor Phase Epitaxy
- Place of Presentation
  EPFL, Lausanne, Switzerland
- Year and Date
  2014-07-15
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Semi-polar growth of InN on GaAs(11n) substrate by MOVPE2013
- Author(s)
  Hisashi Murakami, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  2013 Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Cancun, Mexico
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE 法によるAlN 基板作製と260 nm 帯深紫外LED への応用2013
- Author(s)
  熊谷義直, 纐纈明伯
- Organizer
  応用物理学会応用電子物性分科会研究例会
- Place of Presentation
  京都テルサ, 京都府
- Year and Date
  2013-06-07
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Deep ultraviolet light-emitting diodes fabricated on AIN substrates prepared by hydride vapor phase epitaxy2013
- Author(s)
  T, Kinoshita, K, Hironaka, T, Obata, T, Nagashima, R, F, Dalmau, R, Schlesser, B, Moody, J, Xie, S, Inoue, Y, Kumagai, A, Koukitu, Z, Sitar
- Organizer
  2013 Photonics West
- Place of Presentation
  The Moscone Center, San Francisco (米国)
- Year and Date
  2013-02-06
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Fabrication of DUV-LEDs on AlN Substrates2013
- Author(s)
  T.Kinoshita, T. bata, T.Nagashima, H.Yanagi, J.Xie, R.Collazo, S.Inoue, Y.Kumagai, A.Koukitu, and Z.Sitar
- Organizer
  Conference on LED and Its Industrial Application '13 (LEDIA '13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Year and Date
  2013-04-25
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Donor-Acceptor Pair Compensation and the Broad 2.8 eV Luminescence in Bulk AlN2013
- Author(s)
  Benjamin E.Gaddy, Zachary A.Bryan, Isaac S.Bryan, Ronny Kirste, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Zlatko Sitar, Ramon Collazo and Douglas L.Irving
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, D.C., U.S.A.
- Year and Date
  2013-08-26
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] DUV-LEDs Fabricated on HVPE-AlN Substrates2013
- Author(s)
  T.Kinoshita, T.Obata, T.Nagashima, H.Yanagi, J.Xie, R.Collazo, S.Inoue, Y.Kumagai, A.Koukitu and Z.Sitar
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, D.C., U.S.A.
- Year and Date
  2013-08-26
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE成長フリースタンディングAIN基板の異方性を考慮した分光エリプソメトリー評価2012
- Author(s)
  岡本浩, 佐藤崇信, 堤浩一, 鈴木道夫, 熊谷義直, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 纐纈明伯, Z, Sitar
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山大学文京キャンパス
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] PVT基板上に成長したCドープHVPE法AIN厚膜の光学特性と構造特性2012
- Author(s)
  永島徹, 久保田有紀, 木下亨, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山大学文京キャンパス
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Homoepitaxial growth of thick AIN layers by HYPE on bulk AIN substrates prepared by PVT2012
- Author(s)
  R, Sakamaki, Y, Kubota, T, Nagashima, T, Kinoshita, R, Dalmau, R, Schlesser, B, Moody, J, Xie, H, Murakami, Y、Kumagai, A, Koukitu, Z, Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2012-10-15
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] バルクPVT基板上HVPE成長によるAIN自立基板の作製2012
- Author(s)
  坂巻龍之介, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山大学文京キャンパス
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Optical and structural properties of intentionally C-doped thick HVPE AIN layers grown on PVT AIN substrates2012
- Author(s)
  T, Nagashima, Y, Kubota, T, Kinoshita, R, Schlesser, B, Moody, J, Xie, H, Murakami, Y, Kumagai, A, Koukitu, Z, Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2012-10-18
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] MOVPE法によるGaAs(110)上InN成長における水素添加の影響2012
- Author(s)
  堀田哲郎, 末松真友, 竹中佐江, 冨樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Hetero- and Homo-Epitaxy of Thick AIN Layers by Hydride Vapor Phase Epitaxy2012
- Author(s)
  Y, Kumagai, Y, Kubota, T, Nagashima, T, Kinoshita, R, Dalmau, R, Schlesser, B, Moody, J, Xie, H, Murakami, A, Koukitu, Z, Sitar
- Organizer
  2012 Collaborative Conference on Crystal Growth
- Place of Presentation
  Doubletree by Hilton Orlandoat SeaWorld (米国)(招待講演)
- Year and Date
  2012-12-12
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Prediction of point defect behavior in nitrides using hybrid exchange DFT: Applications to the deep-UV absorption band in AIN2012
- Author(s)
  Z, Sitar, B, E, Gaddy, R, Collazo, J, Xie, Z, Biyan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, D, L, Irving
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2012-10-16
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE法による深紫外光透過性を有する高品質AINウェーハーの作製2012
- Author(s)
  坂巻鮨之介, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] On the origin of the 265 nm absorption band in AIN bulk crystals2012
- Author(s)
  R, Collazo, J, Xie, B, E, Gaddy, Z, Bryan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, D, L, Irving, Z, Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2012-10-18
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Predictive Calculations of Defect Properties using Hybrid Exchange DFT: Applications to Optically Active Impurities in AIN2012
- Author(s)
  B, E, Gaddy, R, Collazo, J, Xie, Z, Bryan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, Z, Sitar, D, L, Irving
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2012-10-15
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] サファイア基板の水素・窒素混合雰囲気下熱処理による表面分解およびAlN形成の熱力学的検討2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-05
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] その場重量測定法を用いたサファイア表面の反応メカニズムの解明2011
- Author(s)
  吉田崇, 冨樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  科学研究費補助金・特定領域研究・公開シンポジウム窒化物光半導体のフロンティア～材料潜在能力の極限発現～
- Place of Presentation
  東京ガーデンパレス
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 高温熱処理によるサファイア表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 綴織明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] Properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy2011
- Author(s)
  J.A.Freitas Jr., J.C.Culbertson, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] InN/sapphire(0001)MBEテンプレート上へのInN HVPEにおける成長速度の影響2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 水素・窒素混合雰囲気での高温熱処理によるc面サファイア基板表面分解及びAlN形成2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] In系窒化物半導体のMOVPE、HVPE成長2011
- Author(s)
  村上尚, 富樫理恵, 稲葉克彦, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス(招待講演)
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Formation of AlN on sapphire surface by high temperature heating in the mixed flow of H_2 and N_22011
- Author(s)
  Y. Kumagai, 他
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Wakayama, Japan
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] Measurement of temperature dependent lattice constants of single crystal AlN and various starting substrates for the growth of AlN2011
- Author(s)
  R.Togashi, M.Sakai, T.Nagashima, J.Tajima, H.Murakami, H.Morioka, T.Yamauchi, K.Saito, Y.Kumagai, K.Takada, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Self epitaxial lateral overgrowth of HVPE-AlN layers on 6H-SiC (0001) substrates by the intentional formation of non c-axis oriented AlN grains2011
- Author(s)
  H.Murakami, S.Sekiguchi, M.Ishizuki, R.Togashi, K.Takada, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Crack in HVPE grown 2H-AlN films on AlN templates prepared by PA-MBE using AM-MEE2011
- Author(s)
  T.Ohachi, N.Yamabe, Y.Yamamoto, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire(0001)テンプレート上AlN HVPE成長における成長速度増加の検討2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-03
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Possibility of InGaN HVPE growth with the high growth rate and the wide composition control2011
- Author(s)
  A.Koukitu, K.Hanaoka, H.Murakami, Y.Kumagai
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 水素・窒素混合雰囲気下熱処理におけるc面サファイア基板表面分解・AlN形成の挙動及びその熱力学解析2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] AlN/sapphire(0001)テンプレート上AlN HVPE成長における成長速度増加の検討2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-03
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates2011
- Author(s)
  T.Nagashima, A.Hakomori, T.Shimoda, K.Hironaka, Y.Kubota, T.Kinoshita, R.Yamamoto, H.Yanagi, Y.Kumagai, A.Koukitu, K.Takada
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 高温下での水素・窒素同時供給によるサファイア基板表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-05
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates2011
- Author(s)
  Rie Togashi, Toru Nagashima, Manabu Harada, Yoshinao Kumagai, Hiroyuki Yanagi, Akinori Koukitu
- Organizer
  5th International Workshop on Crystal Growth Technology (IWCGT-5)
- Place of Presentation
  Berlin-Kopenick, Berlin, Germany
- Year and Date
  2011-06-27
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] GaAs(110)上半極性InN(10-13)成長における窒化及びバッファ層の効果2011
- Author(s)
  趙賢哲, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of Growth Temperature on the Twin Formation of the InN{10-13} on GaAs(110)by Metalorganic Vapor Phase Epitaxy2011
- Author(s)
  Hisashi Murakami, H.-C.Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  SECC, Glasgow, Scotland
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 高温下での水素・窒素同時供給によるサファイア基板表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-05
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 水素・窒素混合雰囲気下熱処理におけるc面サファイア基板表面分解・AlN形成の挙動及びその熱力学解析2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈a明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] サファイア結晶基板の製造技術開発競争2011
- Author(s)
  熊谷義直, 纐纈明伯
- Organizer
  日本学術振興会結晶成長の科学と技術・第161委員会第72回研究会
- Place of Presentation
  東北大学金属材料研究所(招待講演)
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] AlN/sapphire(0001)テンプレート上へのAlN HVPE高速成長における成長速度の影響2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 富樫理恵, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] MOVPE法による高指数面GaAs(311)A及び(311)B基板上への半極性InN成長2011
- Author(s)
  末松真友, 竹中佐江, 堀田哲郎, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Self epitaxial lateral overgrowth of HVPE-AlN layers on 6H-SiC(0001) substrates by the intentional formation of non c-axis oriented AlN grains2011
- Author(s)
  H.Murakami, S.Sekiguchi, M.Ishizuki, R.Togashi, K.Takada, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII) S3-4
- Place of Presentation
  Koyasan, Wakayama, Japan 招待講演
- Year and Date
  2011-06-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire (0001)テンプレート上へのAlN HVPE高速成長における成長速度の影響2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 富樫理恵, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] Formation of AlN on sapphire surface by high temperature heating in the mixed flow of H2 and N22011
- Author(s)
  Y.Kumagai, T.Igi, M.Ishizuki, R.Togashi, H.Murakami, K.Takada, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII) S3-6
- Place of Presentation
  Koyasan, Wakayama, Japan 招待講演
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] MOVPE法を用いた半極性InN(1013)低温成長への水素添加の影響2011
- Author(s)
  竹中佐江, 末松真友, 堀田哲郎, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE法によるInN/sapphire(0001)MBEテンプレート上へのInN成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-03
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Growth of AlN on homo- and hetero-substrates by HVPE2011
- Author(s)
  Yoshinao Kumagai
- Organizer
  5th International Workshop on Crystal Growth Technology (IWCGT-5)
- Place of Presentation
  Berlin, Germany(Invited)
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] サファイア基板の水素・窒素混合雰囲気下熱処理による表面分解および・AlN形成の熱力学的検討2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-05
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] a面サファイア表面の反応メカニズムの原子レベルその場測定2011
- Author(s)
  吉田崇, 阿部創平, 土屋正樹, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Formation of AlN on sapphire surface by high temperature heating in the mixed flow of H_2 and N_22011
- Author(s)
  Y.Kumagai, T.Igi, M.Ishizuki, R.Togashi, H.Murakami, K.Takada, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPEの熱力学的反応解析とリアクタ設計2011
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 水素・窒素混合雰囲気での高温熱処理によるc面サファイア基板表面分解及びAlN形成2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] MOVPE法によるGaAs(110)上InN{10-13}の成長温度が双晶形成に与える影響2011
- Author(s)
  堀田哲郎, 末松真友, 趙賢哲, 富樫理恵, 稲葉克彦, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 高温熱処理によるサファイア表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE法によるInN/sapphire(0001)テンプレート上InN高速成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Influence of GaN substrate polarity on InN growth by hydride vapor phase epitaxy2010
- Author(s)
  R.Togashi, A.Otake, Y.Higashikawa, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride Vapor Phase Epitaxy of AlN at High Temperatures on Freestanding (0001)AlN Substrates2010
- Author(s)
  Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
- Organizer
  2010 International Conference on Indium Phosphide and Related Materials (22nd IPRM)
- Place of Presentation
  高松シンボルタワー(香川県)
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride Vapor Phase Epitaxy of AlN at High Temperatures on Freestanding (0001)AlN Substrates2010
- Author(s)
  Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
- Organizer
  2010 International Conference on Indium Phosphide and Related Materials (22nd IPRM) WeB3-3
- Place of Presentation
  Kagawa, Japan 口頭発表
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaAs(110)基板上半極性InNのMOVPE成長2010
- Author(s)
  村上尚, 趙賢哲, 末松真友, 富樫理恵, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study on the influence of surface hydrogen coverage on the initial growth process of AlN(0001) surface2010
- Author(s)
  Hikari Suzuki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Thermodynamic Analysis on HVPE Growth of InGaN Ternary Alloy2010
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-10
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ gravimetric monitoring of hydrogen etching rates of GaN, sapphire and SiC2010
- Author(s)
  Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
- Organizer
  The 16th International Conference on Crystal Growth in Conjunction with The 14th International Conference on Vapor Growth and Epitaxy (ICCG-16/ICVGE-14)
- Place of Presentation
  Beijing, China 基調講演
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 高温その場X線回折による単結晶AlNの格子定数の温度依存性測定2010
- Author(s)
  酒井美希, 田島純平, 永島徹, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による気相成長法におけるGaN(0001)へのV族原料吸着過程の解析2010
- Author(s)
  鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 単結晶AlNの格子定数の温度依存性2010
- Author(s)
  酒井美希, 田島純平, 永島徹, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] InGaN三元混晶のHVPE成長に関する熱力学的考察2010
- Author(s)
  花岡幸史, 田口悠嘉, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of nucleation behavior in the initial growth stage on the HVPE growth of InN on sapphire (0001) substrates2010
- Author(s)
  Y.Higashikawa, A.Otake, R.Togashi, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN及びAlN成長用初期基板の格子定数の温度依存性測定2010
- Author(s)
  酒井美希, 永島徹, 田島純平, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of InN Films by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)(招待講演)
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of InN Films by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth in Conjunction with The 14th International Conference on Vapor Growth and Epitaxy (ICCG-16/ICVGE-14) DK1
- Place of Presentation
  Beijing, China 招待講演
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 非c軸配向AlNグレインを利用した6H-SiC(0001)基板上AlNのSelf-ELO2010
- Author(s)
  関口修平, 石附正成, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Control of in-plane Epitaxial Relationship of c-plane AlN Layers Grown on a-plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Jumpei Tajima, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010) A1.8
- Place of Presentation
  Tampa, FL, U.S.A. 口頭発表
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] サファイア(0001)基板上InN HVPE成長におけるNH_3供給分圧変調効果2010
- Author(s)
  東川義弘, 大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaN自立基板上InNハイドライド気相成長における基板極性の影響2010
- Author(s)
  富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Effects of growth temperature on the crystal orientation of InN on GaAs(110) by metalorganic vapor phase epitaxy2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaCl_3を用いたGaNのHVPE成長2010
- Author(s)
  山根貴好, 花岡幸史, 近藤秀昭, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE Growth of Nitrides2010
- Author(s)
  纐纈明伯, 熊谷義直
- Organizer
  Growth of Bulk Nitrides
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2010-01-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of Hydrogen Gas on the Growth of Semi-polar InN2010
- Author(s)
  Hyunchol Cho, Mayu Suematsu, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  Florida (USA)
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による窒化物表面へのV族原料吸着過程の解析2010
- Author(s)
  鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2010-11-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 高温熱処理によるc面sapphire基板表面の窒化2010
- Author(s)
  猪木孝洋, 石附正成, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Two-Step Growth of (0001) ZnO Single Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy2010
- Author(s)
  Rui Masuda, Rie Togashi, Hisashi Murakami Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-10
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] First-principle Study on the Effect of Surface Hydrogen Coverage on the Adsorption Process of Ammonia on the InN(0001) Surfaces2010
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  Florida (USA)
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of Semi-Polar InN Layer on GaAs(110) Surface by MOVPE2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride vapor-phase epitaxy of GaN using GaCl_32010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハライド気相成長法によるc面sapphire基板上ZnO二段階成長2010
- Author(s)
  篠塚俊克, 増田塁, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハライド気相成長法を用いたsapphire(0001)基板上ZnO二段階成長2010
- Author(s)
  篠塚俊克, 増田塁, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会年末講演会
- Place of Presentation
  学習院大学(東京都)
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] r面sapphire基板上a面AlN HVPE成長におけるキャリアガスの影響2010
- Author(s)
  田島純平, 越前史, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of AlN on homo-and hetero-substrates by HVPE2010
- Author(s)
  Y. Kumagai
- Organizer
  5th International Workshop on Crystal Growth Technology
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-06-30
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] Control of in-plane Epitaxial Relationship of c-plane AlN Layers Grown on a-plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Jumpei Tajima, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  Florida (USA)
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハイドライド気相成長法によるGaN自立基板上InN成長の極性依存性2010
- Author(s)
  富樫理恵, 足立裕和, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] a面sapphire基板上c面AlN HVPE成長における面内配向性の制御2010
- Author(s)
  田島純平, 越前史, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算によるAlN(0001)表面へのV族原料吸着過程の解析2010
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 窒化物半導体のHVPE成長-表面反応解析から結晶成長へ-2010
- Author(s)
  纐纈明伯, 村上尚, 熊谷義直
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)(基調講演)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] サファイア(0001)基板上InN HVPE成長における成長初期核制御の効果2010
- Author(s)
  東川義弘, 大竹斐, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] r面sapphire基板上a面AlN HVPE成長初期過程におけるキャリアガスの影響2010
- Author(s)
  田島純平, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] r面sapphire基板上a面AlN HVPE成長初期過程におけるキャリアガスの影響2010
- Author(s)
  田島純平, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] 水素・窒素混合雰囲気における高温熱処理がc面sapphire基板表面に与える影響2010
- Author(s)
  猪木孝洋, 石附正成, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会年末講演会
- Place of Presentation
  学習院大学(東京都)
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Lattice constants of AlN in the range 25-1600℃ investigated by using a quasi-bulk crystal grown by hydride vapor phase epitaxy2010
- Author(s)
  Yoshinao Kumagai, Miki Sakai, Jumpei Tajima, Toru Nagashima, Rie Togashi, Hisashi Murakami, Hitoshi Morioka, Tsutomu Yamauchi, Keisuke Saito, Kazuya Takada Akinori Koukitu
- Organizer
  The 37th International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  高松シンボルタワー(香川県)
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ gravimetric monitoring of hydrogen etching rates of GaN, sapphire and SiC2010
- Author(s)
  Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)(基調講演)
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Tri-halide vapor-phase epitaxy of GaN2010
- Author(s)
  Takayoshi Yamane, Hisashi Murakami, Koshi Hanaoka, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Effect of High NH_3 Input Partial Pressure on HVPE of InN on (0001) Sapphire Substrates2010
- Author(s)
  Rie Togashi, Aya Otake, Yoshihiro Higashikawa, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Carrier Gas Dependence of a-Plane AlN Layer Growth on r-Plane Sapphire Substrates at Initial Stage by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Jumpei Tajima, Chikashi Echizen, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Temperature dependence of the lattice constants of single crystal AlN2010
- Author(s)
  M.Sakai, J.Tajima, T.Nagashima, R.Togashi, H.Murakami, H.Morioka, T.Yamauchi, K.Saito, Y.Kumagai, K.Takada, A.Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN-HVPE成長のための原料探索-熱力学解析-2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE2009
- Author(s)
  熊谷義直, 江夏悠貴, 石附正成, 富樫理恵, 田島純平, 村上尚, 高田和哉, 纐纈明伯
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] XPSを用いたGaN結晶の表面改質評価2009
- Author(s)
  野口和之, 野崎理, 渡邉謙二, 纐纈明伯, 熊谷義直, 本田徹
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)の分解過程の解析2009
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] sapphke(0001)基板上InN HVPE成長における成長温度依存性2009
- Author(s)
  纐纈明伯, 田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Si汚染の低減を目指したAlN-HVPE成長のための原料探索2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical investigation of the decomposition mechanism of AlN(0001)surface under a hydrogen atmosphere2009
- Author(s)
  鈴木ひかり, ウリアナ・パニュコワ, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE AlN厚膜自発分離の最適化に向けたAlN/sapphire(0001)界面ボイドの拡張制御2009
- Author(s)
  江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Spontaneous polarization effects in XPS spectra of GaN2009
- Author(s)
  野口和之, 野崎理, 渡邉謙二, 纐纈明伯, 熊谷義直, 本田徹
- Organizer
  第28回電子材料シンポジウム(EMS-28)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 熱力学解析による化合物半導体の気相成長2009
- Author(s)
  纐纈明伯, 熊谷義直
- Organizer
  ワイドギャップ半導体の結晶成長技術-高度環境・エネルギー社会に向けて-
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2009-11-18
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 熱力学解析によるAlN-HVPE成長のための原料探索-Si汚染の低減を目指して-2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 熊谷義直, 纐纈明伯
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法を用いたsapphire(0001)基板上InN成長における成長温度の影響2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 水素雰囲気下におけるAlN(0001)面の分解過程の理論解析2009
- Author(s)
  鈴木ひかり, ウリアナ・パニュコワ, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire界面ボイドの形成制御により自発分離したAlN自立基板の特性2009
- Author(s)
  内田健悟, 江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Temperature dependence of InN growth on(0001)sapphire substrates by atmospheric pressure hydride vapor phase epitaxy2009
- Author(s)
  熊谷義直, 足立裕和大竹斐, 東川義弘, 富樫理恵, 村上尚, 纐纈明伯
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 成長モード制御によるMOVPE-InNの高品質化の検討2009
- Author(s)
  趙賢哲, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Selective growth of InN on patterned GaAs(111)B substrate-Influence of InN decomposition at the interface-2009
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of source precursor for AlN-HVPE to decrease Si-contamination2009
- Author(s)
  纐纈明伯, 田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハイドライド気相成長法によるsapphire(0001)基板上InN成長の成長温度依存性2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] XPS spectra of(0001)and(000-1)GaN surfaces2009
- Author(s)
  Kazuyuki Noguchi, Tadashi Nozaki, Naoyuki Sakai, Yoshinao Kumagai, Akinori Koukitu, Tohru Honda
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] sapphire(0001)基板上HVPE AlN厚膜自発分離のための界面ボイド拡張制御2009
- Author(s)
  江夏悠貴, 久保田有紀, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire界面ボイドの形成を利用したfreestanding AlN基板の作製2009
- Author(s)
  内田健悟, 江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE2009
- Author(s)
  Y. Kumagai, 他
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] Two step growth of InN layer on SiO_2 patterned GaAs(111)B2009
- Author(s)
  趙賢哲, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第28回電子材料シンポジウム(EMS-28)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE2009
- Author(s)
  Yoshinao Kumagai
- Organizer
  6th International Workshop on Bulk Nitride Semi-conductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Iznota, Mikolajki, Ruciane Nida, Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PROJECT-21560009
[Presentation] 気相成長法におけるGaN(0001)の成長初期過程の理論解析2009
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of 2H-AlN films on Si(111)grown by RF-MBE using an interface reaction epitaxy and AM-MEE for HVPE growth2009
- Author(s)
  T.Ohachi, N.Yamabe, K.Ohkusa, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Preparation of a crack-free AIN template layer on sapphire substrate by hydride vapor phase epitaxy at 1450℃2008
- Author(s)
  J. Tajima, H. Murakami, Y. Kumagai, K. Takada, A. Koukitu
- Organizer
  2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  ラフォーレ修善寺, 伊豆, 静岡
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Ab Initio Calculation for an Initial Growth Process of GaN on (0001) and (000-1) Surfaces by Vapor Phase2008
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Controlled Formation of Voids at the AIN and Sapphire Interface by the Sapphire Decomposition for Self-Separation of AIN Layers2008
- Author(s)
  J. Tajima, Y. Kubota, M. Ishizuki, T. Nagashima, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical investigation on the decomposition process of GaN(0001) surface under a hydrogen atmosphere2008
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  ラフォーレ修善寺, 伊豆, 静岡
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of Polarity Dependent InN{0001} Decomposition in N_2 and H_2 Ambient2008
- Author(s)
  R. Togashi, H. Adachi, T. Kamoshita, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 20089
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Progress in Preparation of Freestanding AIN Substrates by Hydride Vapor Phase Epitaxy2008
- Author(s)
  Y. Kumagai, J. Tajima, Y Kubota, M. Ishizuki, R. Togashi, H. Murakami, T. Nagashima, K. Takada, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Improvements in crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure2008
- Author(s)
  H. Murakami, H.-C. Cho, Y. Kumagai, A. Koukitu
- Organizer
  14th International Conference of Metalorganic Vapor Phase Epitaxy
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ gravimetric monitoring of surface reactions between sapphire and NH_<3>2008
- Author(s)
  K. Akiyama, Y. Ishii, H. Murakami, Y., Kumagai, A. Koukitu
- Organizer
  2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  ラフォーレ修善寺, 伊豆, 静岡
- Year and Date
  2008-07-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situグラヴィメトリック法によるNH3雰囲気下(ooo1)c面サファイア表面反応メカニズム2008
- Author(s)
  秋山和博, 石井泰寛, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  千葉県、日本大学
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Progress in Preparation of Freestanding AlN Substrates by Hydride Vapor Phase Epitaxy2008
- Author(s)
  Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWN2008) We2b-C1
- Place of Presentation
  Montreux Music and Convention Center, Montreux, Switzerland 招待講演
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Characterization of a Freestanding AIN Substrate Prepared by Hydride Vapor Phase Epitaxy2007
- Author(s)
  Yoshinao Kumagai, Toru Nagashima, Hisashi Murakami. Kazuya Takada, Akinori Koukitu
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Nevada, Lasvegas, USA
- Year and Date
  2007-09-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride Vapor phase epitaxy of Al_xGa<1_x>N layers on GaN substrates2007
- Author(s)
  Fumitaka Satoh, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] in situ グラヴィメトリック法によるNH3雰囲気下(0001)c面サファイア分解速度の測定2007
- Author(s)
  秋山和博, 石井泰寛, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] High temperature growth of AIN by solid source HVPE with local heating system2007
- Author(s)
  Hisashi Murakami, Ken-ichi Eriguchi, Takako Hiratsuka, Uliana Panyukova, Yoshinao Kumagai, Akinori Koukutu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study of AlN decomposition processes in hydrogen atmosphere2007
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Polarity Control of 2H-AIN templates on Si (111) grown by RF-MBE using a mode change MEE for HVPE growth2007
- Author(s)
  T. Ohachi, H. Shimomura, N. Yamabe, K. Oride, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Groth of thin Protective AIN Layers on Sapphire Substrates at 1065℃ for Hydride Vapor Phase Epitaxy of AIN above 1300℃2007
- Author(s)
  Junpei Tajima, Yuki Kubota, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Nevada, Lasvegas, USA
- Year and Date
  2007-09-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ Gravimetric Monitoring of Decomposition Rate on the Surface of (10-12)r-plane Sapphire for the High Temperature Growth of non-polar AIN2007
- Author(s)
  Kazuhiro Akiyama, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of hydrogen inputpartial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy2007
- Author(s)
  Hisashi MURAKAMI, Jun-ichi TORII, Yoshinao KUMAGAI and Akinori KOUKITU
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] si(111)基板を初期基板に用いたHvPE法によるAIN自立基板の作製2007
- Author(s)
  熊谷義直, 永嶋徹, 村上尚, 高田和哉, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 様々な雰囲気下におけるN極性lnN分解の温度依存性2007
- Author(s)
  富樫理恵, 鴨下朋樹, 西澤雄樹, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] N-polar AIN sacrificial layers grown by MOCVD for free-standing AIN substrates2007
- Author(s)
  Misaichi Takeuchi, Yoshinao Kumagai, Akinori Koukitsu, Yoshinobu Aoyagi
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法によるsapphire基板上AIN高温成長における中間層導入の効果2007
- Author(s)
  田島純平, 久保田有紀, 永嶋徹, 樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] NH_3雰囲気下(0001)c面サファイア表面反応過程のグラヴィメトリック法によるその場測定2007
- Author(s)
  秋山和博, 石井泰寛, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] High Temperature Growth of High-Quality AIN by Sohd-Source HVPE2007
- Author(s)
  Ken-ichi Eriguchi, Hisashi Murakami, Uliana Panyukova, Yoshinao Kumagai, Shigeo Ohira, Akinori Koukitu
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  滋賀県ラフォーレ琵琶湖
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)および(000-1)面の分解過程の解析2007
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)および(000-1)面の分解過程の解析2007
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Experimental and Ab-Initio Studies of Temperature Dependent InN Decomposition in Various Ambient2007
- Author(s)
  Rie Togashi, Tomoki Kamoshita, Yuuki Nishizawa, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Nevada, Lasvegas, USA
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Decomposition Rate on the Surface of (10-12)r-plane Sapphire Monitored by in situ Gravimetric Monitoring Method for the High Temperature Growth of non-polar AIN2007
- Author(s)
  Kazuhiro Akiyama, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  滋賀県ラフォーレ琵琶湖
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法によるGaN基板上高品質Al_XGa_<1-x>N成長2007
- Author(s)
  村上尚, 佐藤史隆, 秋山和博, 武藤弘, 柴田克幸, 山下宗修, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Ab initio calculation of decomposition GaN (0001) and (000-1) Surfaces2007
- Author(s)
  Hikari Suzuki, Rie Togashi, His ashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study of the decomposition of AIN in a hydrogen atmospher2007
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Polarity-dependent growth of InN on Ga-and N-polar GaN surfaces byhydride vapor phase epitaxy2007
- Author(s)
  Y. Kumagai, R. Togashi, T. Kamoshita, Y. Nishizawa, H. Murakami, A. Koukitu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Effect of hydrogen partial pressure on the growth of InN layers on GaAs (111)A surfaces by metalorganic vapor phase epitaxy2007
- Author(s)
  Hisashi MURAKAMI, Hyun-Chol CH0, Yoshinao KUMAGAI and Akinori KOUKITU
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  滋賀県、ラフォーレ琵琶湖
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaN{0001}基板を用いたInNHVPE成長における極性制御2007
- Author(s)
  鴨下朋樹, 西澤雄樹, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE growth of AIN and AIGaN2007
- Author(s)
  Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 固体AICI_3を用いた光加熱HVPEによるAINの高温成長2007
- Author(s)
  江里口健一, 平塚貴子, 村上尚, 熊谷義直, 大平重男, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法によるSi-doped AlN成長の検討2007
- Author(s)
  久保田有紀, 田島純平, 永嶋徹, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study of AIN decomposition processes in hydrogen atmosphere2007
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 原料分子制御HVPE法によるAIN,AIGaNおよびlnN成長2007
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Fabrication of DUV-LEDs on AlN Substrates
- Author(s)
  T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, J. Xie, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  Conference on LED and Its Industrial Application '13
- Place of Presentation
  パシフィコ横浜
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Growth of high quality AlN with deep-UV transparency by HVPE
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Influence of Growth Temperature on Homo-Epitaxial Growth of AlN by HVPE on PVT-AlN Substrates
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Washington, D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Performance of DUV-LEDs fabricated on HVPE-AlN substrates
- Author(s)
  T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu, Z. Sitar
- Organizer
  2014 Photonics West
- Place of Presentation
  San Francisco, U.S.A.
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Vacancy Defects in UV-Transparent HVPE-AlN
- Author(s)
  T. Kuittinen, F. Tuomisto, Y. Kumagai, T. Nagashima, T. Kinoshita, A. Koukitu, R. Collazo and Z. Sitar
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Washington, D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE炉内高温雰囲気下におけるAlN単結晶表面の劣化
- Author(s)
  坂巻龍之介，額賀俊成，平連有紀，永島徹，木下亨，B. Moody，村上尚，R. Collazo，熊谷義直，纐纈明伯，Z. Sitar
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
- Author(s)
  熊谷義直，久保田有紀，永島徹，木下亨，R. Dalmau，R. Schlesser，B. Moody，J. Xie，村上尚，纐纈明伯，Z. Sitar
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE法によるAlN基板作製と260 nm帯深紫外LEDへの応用
- Author(s)
  熊谷義直，纐纈明伯
- Organizer
  応用物理学会応用電子物性分科会研究例会「ワイドギャップ半導体の基板から展開するデバイス　～実用デバイスへの展開～」
- Place of Presentation
  京都テルサ
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] DUV-LEDs Fabricated on HVPE-AlN Substrates
- Author(s)
  T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, J. Xie, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Washington, D.C., U.S.A.
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE法によるPVT-AlN基板上ホモエピタキシャル成長における成長速度増加の検討
- Author(s)
  額賀俊成，坂巻龍之介，平連有紀，永島徹，木下亨，B. Moody，村上尚，R. Collazo，熊谷義直，纐纈明伯，Z. Sitar
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Influence of growth parameters on homo-epitaxial growth of thick AlN layers by HVPE on PVT-AlN substrates
- Author(s)
  Y. Kumagai, T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, A. Koukitu, Z. Sitar
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  Conference on LED and Its Industrial Application '13
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE法による深紫外光透過性を有する高品質AlNの成長
- Author(s)
  額賀俊成，坂巻龍之介，久保田有紀，永島徹，木下亨，B. Moody，J. Xie，村上尚，熊谷義直，纐纈明伯，Z. Sitar
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学銀杏会館
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Properties of homoepitaxial AlN layers grown by HVPE on PVT-AlN substrates
- Author(s)
  T. Nagashima, Y. Kubota, R. Okayama, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, R. Collazo, Z. Sitar
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Donor-Acceptor Pair Compensation and the Broad 2.8 eV Luminescence in Bulk AlN
- Author(s)
  B. E. Gaddy, Z. A. Bryan, I. S. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, Z. Sitar, R. Collazo and D. L. Irving
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Washington, D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-24360006

1. MURAKAMI Hajime (90401455)

# of Collaborated Projects: 5 results

# of Collaborated Products: 278 results
2. KOUKITU Akinori (10111626)

# of Collaborated Projects: 4 results

# of Collaborated Products: 248 results
3. 富樫理恵 (50444112)

# of Collaborated Projects: 3 results

# of Collaborated Products: 71 results
4. HAGIWARA Yoichi (40218392)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. 後藤健 (50572856)

# of Collaborated Projects: 2 results

# of Collaborated Products: 29 results
6. SITAR Zlatko

# of Collaborated Projects: 2 results

# of Collaborated Products: 60 results
7. 関壽 (70015022)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 山口智広 (50454517)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
9. 小西敬太 (50805257)

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results
10. NAGASHIMA Toru

# of Collaborated Projects: 1 results

# of Collaborated Products: 44 results
11. KINOSHITA Toru

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
12. TUOMISTO Filip

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KUMAGAI Yoshinao 熊谷 義直

熊谷 義直 クマガイ ヨシナオ

KUMAGA Yoshinao 熊谷 義直

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Growth of low dislocation density indium oxide single crystal layer to elucidate intrinsic electron mobility

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Bottom up creation of singularities by utilization of equilibrium and non-equilibrium crystal growth from vapor phasePrincipal Investigator

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Realization of n-type AlN by clarifying the mechanism of point defect formation in bulk AlN crystalPrincipal Investigator

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Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxyPrincipal Investigator

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New Growth Method for Bulk GaN using molecule-controlling method

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Investigation of void formation mechanism beneath thin AlN layers grown on foreign substratesPrincipal Investigator

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Thick epitaxial growth of AlN and AlGaN by using controlling molecules of source precursors

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その場重量測定による窒化アルミニウム基板表面反応メカニズムの解明Principal Investigator

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Thermodynamic interactive database for vapor phase epitaxy using internet

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環境半導体鉄シリサイドの気相エピタキシャル成長Principal Investigator

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Thermodynamic analysis system for vapor phase epitaxy by using internet

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[Book] GaNパワーデバイスの技術展開(分担執筆)2012

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[Book] Technology of Gallium Nitride Crystal Growth Hydride Vapor Epitaxy of GaN2010

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KUMAGAI Yoshinao 熊谷義直

熊谷義直クマガイヨシナオ

KUMAGA Yoshinao 熊谷義直

[Book] 熱力学解析による化合物半導体の気相成長第79巻,第11号2009