Sakai Akira 酒井朗

… Alternative Names

SAKAI Akira 酒井朗

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Researcher Number	20314031
Other IDs
External Links
Affiliation (Current)	2025: 大阪大学, 大学院基礎工学研究科, 教授
Affiliation (based on the past Project Information) *help	2021 – 2024: 大阪大学, 大学院基礎工学研究科, 教授 2012 – 2021: 大阪大学, 基礎工学研究科, 教授 2008 – 2009: 大阪大学, 基礎工学研究科, 教授 2007 – 2009: 大阪大学, 大学院・基礎工学研究科, 教授 2008: 名古屋大学, 大学院・工学研究科, 准教授 … More 2006: Nagoya University, Graduate School of Engineering, Assistant Professor, 大学院工学研究科, 助教授 2000 – 2005: 名古屋大学, 大学院・工学研究科, 助教授 2004: 名古屋大学, 工学研究科, 助教授 1999 – 2002: 名古屋大学, 工学研究科, 助教授 Less
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials / Electrical and electronic engineering and related fields / Science and Engineering / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Thin film/Surface and interfacial physical properties / Thin film/Surface and interfacial physical properties / Science and Engineering … More Except Principal Investigator … More Thin film/Surface and interfacial physical properties / Science and Engineering / Medium-sized Section 30:Applied physics and engineering and related fields / Science and Engineering / 表面界面物性 / Applied materials science/Crystal engineering / Electronic materials/Electric materials Less
Keywords	Principal Investigator メモリスタ / 酸素空孔 / シナプス / 透過電子顕微鏡 / 転位 / 走査透過電子顕微鏡 / 連合学習 / クロスバーアレイ / ドーパント / 多ビット信号 … More / パブロフ型条件付け / コンダクタンス / ニューラルネットワーク / 有限要素法シミュレーション / ドリフト・拡散 / 電子顕微鏡 / シリコン / FIB / 抵抗変化 / 集束イオンビーム加工 / フォーミング / 還元 / 金属酸化物 / ヒステリシス / 金属酸化物結晶 / 抵抗スイッチング / TEM / 多端子クロスバー / エッジAI / 極限環境 / 電子線リソグラフィ / 有限要素法 / 人工シナプス / 介在ニューロン / パルスレーザー蒸着法 / 抑制性介在ニューロン / 興奮性主ニューロン / コンダクタンス変調 / 4端子平面型素子 / ニューロモルフィック / 多端子クロスバーアレイ / ゲートチューニング / 4端子クロスバー構造 / パブロフ型条件付け連合学習 / クロスバー構造 / 高温動作 / 4端子 / ヘテロシナプス / 酸化物結晶 / レーザー蒸着 / 薄膜 / 酸化物 / パルスレーザー蒸着 / エピタキシャル薄膜 / 先端機能デバイス / 結晶場分裂 / 不可逆領域 / ゲート効果 / 増強／抑圧特性 / 電気着色現象 / トポロジー / 酸素空孔分布 / シナプス素子 / X線ナノビーム回折 / ポンプ＆プローブ法 / 時間分解 / 圧電応答走査プローブ顕微鏡 / 放射光 / 時間分解ポンプ＆プローブ法 / 圧電応答特性 / ナノボイド / Ptワイヤプロファイラー / 圧電応答 / 3次元 / 結晶性断層マッピング解析 / トモグラフィックマッピング / ３次元 / Ptワイヤプロファイラ / 結晶性断層マッピング / AlGaN/GaN HEMT / ポンプ＆プローブ計測 / 時分割パルス放射光回折 / 時分割ポンプ－プローブ法 / 逆圧電効果 / 漏れ電流 / 深さ分解結晶評価 / トモグラフィックマッピング解析 / 3次元逆格子マッピング / ナノビームX線回折 / Strain structure / Germanium / Silicon / Electron microscopy / Semiconductor property / Lattice defect / Crystal growth / Crystal engineering / 高分解能X線回析2次元逆格子マッピング / X線回折 / 欠陥 / ヘテロエピタキシャル / 歪み / 歪構造 / ゲルマニウム / 半導体物性 / 格子欠陥 / 結晶成長 / 結晶工学 / sample holder / degradation / electric field stress / PZT / ferroelectric film / in situ obervation / 電極 / 電圧ストレス / 試料ホルダー / 劣化 / 電界ストレス / PZT薄膜 / 強誘電体 / その場観察 / 電流‐電圧特性 / 直接接合基板 / 電子線リソグラフィー / フィラメント / ４端子 / 単結晶 / メムリスタ / バーガースベクトル / 抵抗遷移 / 電子エネルギー損失分光 / 欠陥準位 / 空間電荷制限電流 / 電気伝導 / 電流検出型原子間力顕微鏡 / 界面固相反応 / 熱的負荷プロセス / 層状積層プロセス / PLD / High-k / ゲート絶縁膜 … More Except Principal Investigator シリサイド / 格子欠陥 / 走査トンネル顕微鏡 / シリコンゲルマニウム / Silicide / ニッケル / GaN / 電流検出型原子間力顕微鏡 / ゲート絶縁膜 / 結晶工学 / 半導体物性 / ボロン / 透過電子顕微鏡 / 転位 / 低転位 / 気相成長 / 低抵抗 / PNダイオード / OVPE / 先端機能デバイス / 電子・電気材料 / 特異構造 / Scanning Tunneling Microscope / Contact / Surface / Interface / Nickel / Carbon / Silicon / 表面物件 / 界面物件 / コンタクト / 表面物性 / 界面物性 / カーボン / シリコン / Dielectric breakdown / Stress induced leakage current / Gate SiO_2 Films / Metal-oxide-Semiconductor(MOS) / Conductive atomic force microscopy / Scanning tunneling spectroscopy(STS) / Scanning tunneling microscopy(STM) / 電気伝導特性 / HfO_2 / 走査プローブ顕微鏡 / ストレス誘起リーク電流 / 高誘電率材料 / 金属酸化膜 / ストレス誘起欠陥 / 電流スポット / La_2O_3-Al_2O_3複合膜 / 高誘電率ゲート絶縁膜 / ゲートSiO_2膜 / MOSキャパシタ / 絶縁破壊 / Metal-oxide-Semiconductor / 電荷トラップ / 極薄シリコン酸化膜 / 走査トンネル分光 / 走査型トンネル顕微鏡 / Drain / Source / Germanosilicide / Titanium / Rapid thermal annealing / Silicon germanium / modulated interface / Ultra low resistance contact / 急速加熱化学気相成長法 / 超抵抗コンタクト / ドレイン / ソース / ジャーマノシリサイド / チタン / 急速加熱処理 / 界面組成変調層 / 超低抵抗コンタクト / 研磨 / GaN基板 / 積層欠陥 / サファイア基板 / HVPE / MOVPE / 半極性面 / 次世代半導体デバイス / 劣化機構 / ナノ領域 / 構造ゆらぎ / 半導体デバイス / MOSFET / キャリアセパレーション / C-AFM / IV族半導体 / 半導体工学 / ひずみ / 酸化現象 / エピタキシャル成長 / 表面・界面物理 / 水素 / 錫 / ゲルマニウム / 歪ゲルマニウム / ゲートスタック構造 / ポストスケーリング / 表面・界面物性 / ナノ材料 / デバイス設計・製造プロセス / 半導体超微細化 / ハイドープ / 低温エピタキシャル成長 / イオンビームスパッタ法 / 水素サーファクタント成長 / 固相エピタキシャル成長 / イオンビームスパッタ / 歪成長 / スパッタ粒子のエネルギーの低減 / スパッタ法のMCシミュレーション / 界面層 / 歪緩和バッファ層 / シリコンゲルマニウムカーボン / Bの高濃度ドープ / 2次元逆格子マッピングX線回折法 / B高濃度ドーピング / 熱電効果 / バッファ層 / 歪緩和 / シリコンゲルマニウムカーボンバッファ層 Less

Development of high-performance crossbar array memristors for Edge AI in extreme environmentsPrincipal Investigator
- Principal Investigator
  
  酒井朗
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Osaka University
Development of Neural Hardware with Associative Learning Capabilities for Multi-bit SignalsPrincipal Investigator
- Principal Investigator
  
  酒井朗
- Project Period (FY)
  2024 – 2025
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
Artificial synaptic crossbar array memristors with interneuron functionPrincipal Investigator
- Principal Investigator
  
  Sakai Akira
- Project Period (FY)
  2021 – 2022
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
Growth of a thick GaN crystal with extremely low resistivity by the OVPE method
- Principal Investigator
  
  Mori Yusuke
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Osaka University
Heterosynaptic platform functionalized by topological control of oxygen vacancy distribution in memristive devicesPrincipal Investigator
- Principal Investigator
  
  Sakai Akira
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
Topological control of oxygen vacancy distribution in memristive materials for hypercomplex synaptic devicesPrincipal Investigator
- Principal Investigator
  
  Sakai Akira
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Research Field
  
  Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
Synaptic platform for neuromorphic computing developed by functional defect engineering in memristive devicesPrincipal Investigator
- Principal Investigator
  
  Sakai Akira
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Steering Group
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Multiscale characterization of singularity structures and behaviors thereofPrincipal Investigator
- Principal Investigator
  
  SAKAI AKIRA
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Osaka University
Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
- Principal Investigator
  
  Tadatomo Kazuyuki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Four terminal memristor devices for correlation-based synaptic signal transductionPrincipal Investigator
- Principal Investigator
  
  Sakai Akira
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Osaka University
Investigation of mechanism of electrical conduction via functionalized dislocation networks in atomically-bonded metal-oxide crystalsPrincipal Investigator
- Principal Investigator
  
  SAKAI Akira
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Osaka University
Development of carrier separation technique by conductive atomic force microscopy
- Principal Investigator
  
  SAKASHITA Mitsuo
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Creation of tensile-strained Ge high-mobility-channel by thermal nonequilibrium process
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Controlling deformation of strained hetero structure of group IV semiconductors for realization of ultra uniform strain fieldsPrincipal Investigator
- Principal Investigator
  
  SAKAI Akira
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Control of solid-phase reaction dynamics and carbon engineering for nanofabrication of group-IV
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
熱負荷プロセスにおける異種絶縁膜界面の構造遷移機構の原子レベル解析Principal Investigator
- Principal Investigator
  
  酒井朗
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Development of direct observation technique of single electron trap and investigation of degradation mechanism of ultra-thin gate dielectric films
- Principal Investigator
  
  KONDO Hiroki, 安田幸夫
- Project Period (FY)
  2001 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  表面界面物性
- Research Institution
  Nagoya University
In situ transmission electron microscopy of degradation phenomena of Pb(Zrx Ti_<l-x>)O_3 thin filmsPrincipal Investigator
- Principal Investigator
  
  SAKAI Akira
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSI
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
人工IV族半導体極微細構造デバイス製作のための原子精度要素プロセスの開発
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University

[Journal Article] Interface engineering of amorphous gallium oxide crossbar array memristors for neuromorphic computing2023
- Author(s)
  Masaoka Naoki、Hayashi Yusuke、Tohei Tetsuya、Sakai Akira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SC Pages: SC1035-SC1035
- DOI
  10.35848/1347-4065/acb060
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00248, KAKENHI-PROJECT-21K18723
[Journal Article] Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors2023
- Author(s)
  Ikeuchi Taishi、Hayashi Yusuke、Tohei Tetsuya、Sakai Akira
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 1 Pages: 015509-015509
- DOI
  10.35848/1882-0786/acb0ae
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00248, KAKENHI-PROJECT-21K18723
[Journal Article] High-temperature operation of gallium oxide memristors up to 600?K2023
- Author(s)
  Sato Kento、Hayashi Yusuke、Masaoka Naoki、Tohei Tetsuya、Sakai Akira
- Journal Title
  
  Scientific Reports
  
  Volume: 13 Issue: 1
- DOI
  10.1038/s41598-023-28075-4
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00248, KAKENHI-PROJECT-21K18723
[Journal Article] Versatile Functionality of Four-Terminal TiO2-x Memristive Devices as Artificial Synapses for Neuromorphic Computing2022
- Author(s)
  Ryotaro Miyake, Zenya Nagata, Kenta Adachi, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: - Issue: 5 Pages: 2326-2336
- DOI
  10.1021/acsaelm.2c00161
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04468, KAKENHI-PROJECT-19K05525, KAKENHI-PROJECT-20H00248, KAKENHI-PROJECT-21K18723
[Journal Article] Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates2021
- Author(s)
  T. Hamachi, T. Tohei, Y. Hayashi, M. Imanishi, S. Usami, Y. Mori, N. Ikarashi, A. Sakai
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 129 Issue: 22 Pages: 225701-225701
- DOI
  10.1063/5.0053766
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00352, KAKENHI-PROJECT-20J10170
[Journal Article] Fabrication of GaOx based crossbar array memristive devices and their resistive switching properties2020
- Author(s)
  M. Joko, Y. Hayashi, T. Tohei, A. Sakai
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 59 Issue: SM Pages: SMMC03-SMMC03
- DOI
  10.35848/1347-4065/ab8be6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04468, KAKENHI-PROJECT-20H00248
[Journal Article] Local piezoelectric properties in Na-flux GaN bulk single crystals2020
- Author(s)
  Ueda A.、Hamachi T.、Okazaki A.、Takeuchi S.、Tohei T.、Imanishi M.、Imade M.、Mori Y.、Sakai A.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 128 Issue: 12 Pages: 125110-125110
- DOI
  10.1063/5.0018336
- Data Source
  KAKENHI-PLANNED-16H06423
[Journal Article] Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method2019
- Author(s)
  Hamachi Takeaki、Tohei Tetsuya、Imanishi Masayuki、Mori Yusuke、Sakai Akira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCB23-SCCB23
- DOI
  10.7567/1347-4065/ab1392
- NAID
  210000156139
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06423
[Journal Article] Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction2019
- Author(s)
  Shida Kazuki、Yamamoto Nozomi、Tohei Tetsuya、Imanishi Masayuki、Mori Yusuke、Sumitani Kazushi、Imai Yasuhiko、Kimura Shigeru、Sakai Akira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCB16-SCCB16
- DOI
  10.7567/1347-4065/ab0d05
- NAID
  210000155953
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06423, KAKENHI-PROJECT-18J10700
[Journal Article] Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals2019
- Author(s)
  Takeuchi Shotaro、Shimizu Takuma、Isaka Tsuyoshi、Tohei Tetsuya、Ikarashi Nobuyuki、Sakai Akira
- Journal Title
  
  Scientific Reports
  
  Volume: 9 Issue: 1
- DOI
  10.1038/s41598-018-38347-z
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H03236, KAKENHI-PROJECT-17K18881
[Journal Article] Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2－x Memristive Devices2019
- Author(s)
  Z. Nagata, T. Shimizu, T. Isaka, T. Tohei*, N. Ikarashi, A. Sakai*
- Journal Title
  
  Scientific Reports
  
  Volume: 9 Issue: 1
- DOI
  10.1038/s41598-019-46192-x
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04468, KAKENHI-PROJECT-17H03236
[Journal Article] Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method2019
- Author(s)
  Hamachi Takeaki、Tohei Tetsuya、Imanishi Masayuki、Mori Yusuke、Sakai Akira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 5 Pages: 050918-050918
- DOI
  10.7567/1347-4065/ab14f9
- NAID
  210000155665
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06423
[Journal Article] Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy2018
- Author(s)
  Hamachi T.、Takeuchi S.、Tohei T.、Imanishi M.、Imade M.、Mori Y.、Sakai A.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 16 Pages: 161417-161417
- DOI
  10.1063/1.5011345
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06423, KAKENHI-PLANNED-25106003
[Journal Article] Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction2018
- Author(s)
  Shida K.、Takeuchi S.、Tohei T.、Miyake H.、Hiramatsu K.、Sumitani K.、Imai Y.、Kimura S.、Sakai A.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 16 Pages: 161563-161563
- DOI
  10.1063/1.5011291
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06423, KAKENHI-PLANNED-25106003, KAKENHI-PLANNED-16H06415
[Journal Article] Facile Synthesis Route of Au-Ag Nanostructures Soaked in PEG2018
- Author(s)
  Fodjo Essy Kouadio、Canlier Ali、Kong Cong、Yurtsever Ayhan、Guillaume Pohan Lemeyonouin Aliou、Patrice Fato Tano、Abe Masayuki、Tohei Tetsuya、Sakai Akira
- Journal Title
  
  Advances in Nanoparticles
  
  Volume: 07 Issue: 02 Pages: 37-45
- DOI
  10.4236/anp.2018.72004
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Journal Article] 半導体結晶中特異構造の３次元微細構造解2018
- Author(s)
  酒井朗，鎌田祥平，志田和己，竹内正太郎，今井康彦，木村滋
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 45
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06423
[Journal Article] Analysis of Ti valence states in resistive switching regions of a rutile TiO2-x four-terminal memristive device2018
- Author(s)
  Yamaguchi Kengo、Takeuchi Shotaro、Tohei Tetsuya、Ikarashi Nobuyuki、Sakai Akira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 6S3 Pages: 06KB02-06KB02
- DOI
  10.7567/jjap.57.06kb02
- NAID
  210000149225
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03236, KAKENHI-PROJECT-17K18881
[Journal Article] Depth-resolved analysis of lattice distortions in high-Ge-content SiGe/compositionally graded SiGe films using nanobeam x-ray diffraction2018
- Author(s)
  Shida Kazuki、Takeuchi Shotaro、Tohei Tetsuya、Imai Yasuhiko、Kimura Shigeru、Schulze Andreas、Caymax Matty、Sakai Akira
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 33 Issue: 12 Pages: 124005-124005
- DOI
  10.1088/1361-6641/aae6d9
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06423, KAKENHI-PROJECT-18J10700
[Journal Article] Control of dislocation morphology and lattice distortion in Na-flux GaN crystals2017
- Author(s)
  Takeuchi S.、Mizuta Y.、Imanishi M.、Imade M.、Mori Y.、Sumitani K.、Imai Y.、Kimura S.、Sakai A.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 122 Issue: 10 Pages: 105303-105303
- DOI
  10.1063/1.4989647
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06423
[Journal Article] Tomographic mapping analysis in the depth direction of high-Ge-content SiGe layers with compositionally graded buffers using nanobeam X-ray diffraction2017
- Author(s)
  K. Shida, S. Takeuchi, Y. Imai, S. Kimura, A. Schulze, M. Caymax, A. Sakai
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 9 Issue: 15 Pages: 13726-13732
- DOI
  10.1021/acsami.7b01309
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Journal Article] Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique2016
- Author(s)
  S. Kamada, S. Takeuchi, D. T. Khan, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 11 Pages: 111001-111001
- DOI
  10.7567/apex.9.111001
- NAID
  210000138078
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423, KAKENHI-PLANNED-16H06415
[Journal Article] Positional dependence of defect distribution in semipolar (20-21) hydride vapor phase epitaxy-GaN films grown on (22-43) patterned sapphire substrates2016
- Author(s)
  T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FA07-05FA07
- DOI
  10.7567/jjap.55.05fa07
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Thickness and Growth Condition Dependence of Crystallinity in Semipolar (20-21) GaN Films Grown on (22-43) Patterned Sapphire Substrate2015
- Author(s)
  S. Takeuchi, T. Uchiyama, T. Arauchi, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, A. Sakai
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 未定 Issue: 5 Pages: 1142-1148
- DOI
  10.1002/pssb.201451562
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26790044, KAKENHI-PROJECT-25289088
[Journal Article] Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction2015
- Author(s)
  T. Arauchi, S. Takeuchi, Y. Nakamura, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, A. Sakai
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 未定 Issue: 5 Pages: 1149-1154
- DOI
  10.1002/pssb.201451564
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26790044, KAKENHI-PROJECT-25289088
[Journal Article] 貼り合わせ直接接合SrtiO_3(001)基板の抵抗スイッチング特製評価2012
- Author(s)
  浅田遼大, Pham Phu Than Son, Kokate Nishad Vasant, 吉川純, 竹内政太郎, 中村芳明, 酒井朗
- Journal Title
  
  信学技報(IEICE Tschnical Report)
  
  Volume: 112 Pages: 7-12
- Data Source
  KAKENHI-PROJECT-24360017
[Journal Article] Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor2010
- Author(s)
  H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Journal Title
  
  Appl. Phys. Lett. 96
  
  Pages: 12105-12105
- NAID
  120002414452
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Low temperature growth of Ge_<1-x>Sn_x buffer layers for tensile-strained Ge layers2010
- Author(s)
  Y.Shimura, N.Tsutsui, O.Nakatsuka, A.Sakai, S.Zaima
- Journal Title
  
  Thin Solid Films 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing2010
- Author(s)
  T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata
- Journal Title
  
  Thin Solid Films 518(6)
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Low temperature growth of Ge_<1-x>Sn_x buffer layers for tensile-strained Ge layers2010
- Author(s)
  Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Journal Title
  
  Thin Solid Films 518(6)
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor2010
- Author(s)
  H.Kondo, S.Sakurai, M.Sakashita, A.Sakai, M.Ogawa, S.Zaima
- Journal Title
  
  Appl.Phys.Lett. 96
- NAID
  120002414452
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Microstructures in directly bonded Sisubstrates2009
- Author(s)
  Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori
- Journal Title
  
  Solid-State Electronics 53
  
  Pages: 837-840
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si_<1-x>Ge_x Structures on Si(001) Substrates2009
- Author(s)
  T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, S. Zaima
- Journal Title
  
  Solid-State Electronics 53(11)
  
  Pages: 1198-1201
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Thermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodes2009
- Author(s)
  H. Kondo, K. Furumai, M. Sakashita, A. Sakai, S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- NAID
  210000066523
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Thermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodes2009
- Author(s)
  H.Kondo, K.Furumai, M.Sakashita, A.Sakai, S.Zaima
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  210000066523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge_<1-x>Sn_x Buffer Layers for Tensile-Strained Ge Layers2009
- Author(s)
  Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x> Sn_x/virtual Ge substrates2008
- Author(s)
  S.Takeuchi, A.Sakai, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 159-162
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System2008
- Author(s)
  O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47(4)
  
  Pages: 2402-2406
- NAID
  10022551560
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth of highly strain-relaxed Ge_<1-x>Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008
- Author(s)
  S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, A. Sakai
- Journal Title
  
  Appl. Phys. Lett. 92
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Characterization of bonding structures of directly bonded hybrid crystal orientation substrates2008
- Author(s)
  E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, S. Zaima
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 323-326
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge (001) Substrates2008
- Author(s)
  M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Journal Title
  
  Appl. Surf. Sci. (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2008
- Author(s)
  M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Journal Title
  
  Appl. Surf. Sci 254(19)
  
  Pages: 6048-60651
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Silicide and germanide technology for contacts and gates in MOSFET applications2008
- Author(s)
  S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 80-83
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates2008
- Author(s)
  S.Takeuchi, A.Sakai, O.Nakatsuka, M.Ogawa, and S.Zaima
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 159-162
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System2008
- Author(s)
  O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 2402-2406
- NAID
  10022551560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2008
- Author(s)
  K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 2420-2424
- NAID
  10022549067
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth of highly strain-relaxed Ge_<1-x>Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008
- Author(s)
  S.Takeuchi, Y.Shimura, O.Nakatsuka, S.Zaima, M.Ogawa, and A.Sakai
- Journal Title
  
  Appl.Phys.Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Silicide and germanide technology for contacts and gates in MOSFET applications2008
- Author(s)
  S.Zaima, O.Nakatsuka, H.Kondo, M.Sakashita, A.Sakai, M.Ogawa
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 80-83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2008
- Author(s)
  K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47(4)
  
  Pages: 2420-2424
- NAID
  10022549067
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates2008
- Author(s)
  S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 159-162
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth of highly strain-relaxed Ge_<1-x> Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008
- Author(s)
  S.Takeuchi, Y.Shimura, O.Nakatsuka, S.Zaima, M.Ogawa, A.Sakai
- Journal Title
  
  Appl.Phys.Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2008
- Author(s)
  K.Furumai, H.Kondo, M.Sakashita, A.Sakai, M.Ogawa and S.Zaima
- Journal Title
  
  Jpn.J.Appl.Phys. 47(4)
  
  Pages: 2420-2424
- NAID
  10022549067
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価2007
- Author(s)
  鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明
- Journal Title
  
  特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"(第12回研究会)
  
  Pages: 251-256
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Comparison Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes2007
- Author(s)
  D.Ikeno, K.Furumai, H.Kondo, M.Sakashita, A.Sakai, M.Ogawa, S.Zaima
- Journal Title
  
  Japanese Journal of Applied Physics 46 (4B)
  
  Pages: 1865-1869
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Composition dependence of work function in metal (Ni, Pt)-germanide gate electrode2007
- Author(s)
  D. Ikeno, Y. Kaneko, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Journal Title
  
  Jpn. J. Appl. phys. 46(4B)
  
  Pages: 1865-1869
- NAID
  10022545673
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth and structure evaluation of strain-relaxed Ge_<1-x>Sn_x buffer layers grown on various types of substrates2007
- Author(s)
  S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, S. Zaima
- Journal Title
  
  Semicond. Sci. Technol. 22(1)
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明
- Journal Title
  
  特別研究会研究報告"ゲートスタック研究会-材料・プロセス・評価の物理-"(第12回研究会)
  
  Pages: 197-202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Pt-germanideゲート電極の結晶構造及び電気的特性の評価2007
- Author(s)
  池野大輔, 古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明
- Journal Title
  
  特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"(第12回研究会)
  
  Pages: 277-282
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth and structure evaluation of strain-relaxed Ge_1-xSn_x buffer layers grown on various types of substrates2007
- Author(s)
  S.Takeuchi, A.Sakai, K.Yamamoto, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
  
  Semiconductor Science and Technology 22 (1)
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Scanning Tunneling Microscopy Study on the Reaction of Oxygen with Clean Ge(001) Surfaces2007
- Author(s)
  A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, and M. Ogawa
- Journal Title
  
  ECS Trans 3(7)
  
  Pages: 1197-1203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction2006
- Author(s)
  S.Mochizuki, A.Sakai, N.Taoka, O.Nakatsuka, S.Takeda, S.Kimura, M.Ogawa, S.Zaima
- Journal Title
  
  Thin Solid Films 508 (1-2)
  
  Pages: 128-131
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Engineering of strain and dislocations at group IV semiconductor thin-film interfaces for next-generation silicon ULSI2006
- Author(s)
  A.Sakai, S.Zaima
- Journal Title
  
  OYO BUTSURI 75 (4)
  
  Pages: 426-434
- NAID
  10017540920
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] 次世代シリコンULSIに向けたIV族系半導体ヘテロ界面のひずみと転位の制御技術と評価2006
- Author(s)
  酒井朗, 財満鎭明
- Journal Title
  
  応用物理 75 (4)
  
  Pages: 426-434
- NAID
  10017540920
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates2006
- Author(s)
  N.Taoka, A.Sakai, S.Mochizuki, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
  
  Thin Solid Films 508 (1-2)
  
  Pages: 147-151
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Improvement in NiSi/Si contact properties with C-implantation2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, Y.Yasuda, S.Zaima
- Journal Title
  
  Microelectronic Engineering 82 (3-4)
  
  Pages: 479-484
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Fabrication technology of SiGe hetero-structures and their properties2005
- Author(s)
  Y.Shiraki, A.Sakai
- Journal Title
  
  Surface Science Reports 59(7-8)
  
  Pages: 153-207
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Initial growth behaviors of SiGeC in SiGe and C alternate deposition2005
- Author(s)
  S.Takeuchi, O.Nakatsuka, Y.Wakazono, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science in Semiconductor Processing 8 (1-3)
  
  Pages: 5-9
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations2005
- Author(s)
  N.Taoka, A.Sakai, T.Egawa, O.Nakatsuka, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science in Semiconductor Processing 8 (1-3)
  
  Pages: 131-135
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations2005
- Author(s)
  N.Taoka, A.Sakai, T.Egawa, O.Nakatsuka, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science in Semiconductor Processing 8(1-3)
  
  Pages: 131-135
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Dislocation and strain engineering for SiGe buffer layers on Si2005
- Author(s)
  A.Sakai, S.Mochizuki, N.Taoka, O.Nakatsuka, S.Takeda, S.Kimura, M.Ogawa, S.Zaima
- Journal Title
  
  Crystalline Defects and Contamination : Their Impact and Control in Device Manufacturing IV, DECON 2005, Proceedings of the Satellite Symposium to 35th European Solid-State Device Research Conference 2005 2005-10
  
  Pages: 16-29
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, S.Zaima, J.Murota, Y.Yasuda
- Journal Title
  
  Proceedings of Advanced Metallization Conference 2004 (AMC2004)
  
  Pages: 293-298
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Control of strain and dislocation structures of Si_<1-x>,Ge_x buffer layers2005
- Author(s)
  N.Taoka, A.Sakai, S.Mochizuki, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
  
  Journal of the Japanese Association of Crystal Growth 32
  
  Pages: 89-98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Improvement in NiSi/Si contact properties with C-implantation2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, Y.Yasuda, S.Zaima
- Journal Title
  
  Microelectronic Engineering 82(3-4)
  
  Pages: 479-484
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Si_<1-x>Ge_xバッファ層の歪緩和および転位構造制御2005
- Author(s)
  田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎭明
- Journal Title
  
  日本結晶成長学会誌 32
  
  Pages: 89-98
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Initial growth behaviors of SiGeC in SiGe and C alternate deposition2005
- Author(s)
  S.Takeuchi, O.Nakatsuka, Y.Wakazono, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science in Semiconductor Processing 8
  
  Pages: 5-9
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems2005
- Author(s)
  A.Sakai, N.Taoka, O.Nakatsuka, S.Zaima, Y.Yasuda
- Journal Title
  
  Applied Physics Letters 86
- NAID
  120000979691
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, S.Zaima, J.Murota, Y.Yasuda
- Journal Title
  
  Proceedings of Advanced Metallization Conference 2004 (AMC2004) 293
  
  Pages: 293-298
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Fabrication technology of SiGe hetero-structures and their properties2005
- Author(s)
  Y.Shiraki, A.Sakai
- Journal Title
  
  Surface Science Reports 59
  
  Pages: 153-207
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Improvement in NiSi/Si contact properties with C-implantation2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, Y.Yasuda, S.Zaima
- Journal Title
  
  Microelectronic Engineering 82
  
  Pages: 479-484
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Fabrication technology of SiGe hetero-structures and their properties2005
- Author(s)
  Y.Shiraki, A.Sakai
- Journal Title
  
  Surface Science Reports 59 (7-8)
  
  Pages: 153-207
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Fabrication technology of SiGe hetero-structures and their properties2005
- Author(s)
  Y.Shiraki, A.Sakai
- Journal Title
  
  Surface Science Reports 59 (7-8)
  
  Pages: 153-207
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] SiおよびSi_<1-x-y>Ge_xC_y上のNiシリサイド形成2004
- Author(s)
  中塚理, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
  
  電気学会研究会資料(電子材料研究会) EFM-04
  
  Pages: 25-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Si及びSi_<1-x-y>Ge_xC_y上のNiシリサイド形成2004
- Author(s)
  中塚理, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
  
  電気学会研究会資料(電子材料研究会) EFM-04
  
  Pages: 25-30
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Detection and Characterization of Stress-Induced Defects In Gate SiO_2 Films by Conductive Atomic Force Microscopy2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4679-4682
- NAID
  10013431900
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Silicide Formation on Si and Si_<1-x-y>Ge_xC_y2004
- Author(s)
  O.Nakatsuka, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Reports of DENKI GAKKAI KENKYUUKAI (DENSHI ZAIRYOU KENKYUUKAI) EFM-04
  
  Pages: 25-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4679-4682
- NAID
  10013431900
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)2004
- Author(s)
  E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Applied Surface Science 237(1-4)
  
  Pages: 150-155
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films2004
- Author(s)
  Yukihiko Watanabe, Akiyoshi Seko, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
- Journal Title
  
  Japanese Journal Applied Physics Vol.43, No.4B
  
  Pages: 1843-1847
- NAID
  10012948668
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Behavior of Local Current Leadage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy2004
- Author(s)
  A.Seko, Y.Watanabe, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4683-4686
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy2004
- Author(s)
  Akiyoshi Seko, Yukihiko Watanabe, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
- Journal Title
  
  Japanese Journal Applied Physics Vol.43, No.7B
  
  Pages: 4683-4686
- NAID
  10013431909
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(2A)
- NAID
  10012038848
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Dislocation engineering for high-quality SiGe epitaxial films on Si substrates2004
- Author(s)
  A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Proceedings of The 4th International Symposium on Advanced Science and Technology of Silicon Materials
  
  Pages: 245-250
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(4B)
  
  Pages: 1843-1847
- NAID
  10012948668
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Initial growth behaviors of SiGeC in SiGe and C alternate deposition2004
- Author(s)
  S.Takeuchi, O.Nakatsuka, Y.Wakazono, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science and Semiconductor Processing 8(1-3)
  
  Pages: 5-9
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy2004
- Author(s)
  Yukihiko Watanabe, Akiyoshi Seko, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
- Journal Title
  
  Japanese Journal Applied Physics Vol.43, No.7B
  
  Pages: 4679-4682
- NAID
  10013431900
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy2004
- Author(s)
  A.Seko, Y.Watanabe, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4683-4686
- NAID
  10013431909
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)2004
- Author(s)
  E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Applied Surface Science 237 (1-4)
  
  Pages: 150-155
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)2004
- Author(s)
  E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Applied Surface Science 237
  
  Pages: 150-155
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] 電流注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析2004
- Author(s)
  世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
  
  信学論 J87-C (8)
  
  Pages: 616-624
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] 電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析2003
- Author(s)
  世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
  
  Technical report of IEICE(信学技報) 103
  
  Pages: 1-6
- NAID
  110003202684
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Local Leakage Current of HfO_2 Thin Films Characterized by Conducting Atomic Force Microscopy2003
- Author(s)
  H.Ikeda, T.Goto, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 42(4B)
  
  Pages: 1949-1953
- NAID
  10010800794
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy2002
- Author(s)
  J.-Y.Rosaye, N.Kurumado, M.Sakashita, H.Ikeda, A.Sakai, P.Mialhe, J.-P.Charles, S.Zaima, Y.Yasuda, Y.Watanabe
- Journal Title
  
  Microelectronics Journal 33(5-6)
  
  Pages: 429-436
- NAID
  10012038848
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen.2002
- Author(s)
  H.Ikeda, D.Matsushita, S.Naito, K.Ohmori, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 41(4B)
  
  Pages: 2463-2467
- NAID
  10015752767
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Structural and electrical characteristics of HfO_2 films fabricated by pulsed laser deposition2002
- Author(s)
  H.Ikeda, S.Goto, K.Honda, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 41(4B)
  
  Pages: 2476-2479
- NAID
  110003310815
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Characterization of defect traps in SiO_2 thin films influence of temperature on defects2002
- Author(s)
  J.-Y.Rosaye, N.Kurumado, M.Sakashita, H.Ikeda, A.Sakai, P.Mialhe, J.-P.Charles, S.Zaima, Y.Yasuda, Y.Watanabe
- Journal Title
  
  Microelectronics Journal 33(5-6)
  
  Pages: 429-436
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Characterization of defect traps in SiO_2 thin films influence of temperature on defects2002
- Author(s)
  H.Ikeda, D.Matsushita, S.Naito, K.Ohmori, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 41(4B)
  
  Pages: 2463-2467
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Real-time observation of initial oxidation on highly B-doped Si(100)-2x1 surfaces using scanning tunneling microscopy2001
- Author(s)
  K.Ohmori, M.Tsukakoshi, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Proc.of the 25th International conference on the Physics of Semiconductors
  
  Pages: 329-330
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Real-time observation of initial oxdation on highly B-doped Si(100)-2xl surfaces using scanning tunneling microscopy2001
- Author(s)
  K.Ohmori, M.Tsukakoshi, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Proc.of the 25th International conference on the Physics of Semiconductors
  
  Pages: 329-330
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Microscopic Observation of X-ray Irradiation Damages in Ultra-Thin SiO_2 Films2001
- Author(s)
  K.Ohmori, T.Goto, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 40(4)
  
  Pages: 2823-2826
- NAID
  10017197998
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Characterization of deffect traps in SiO_2 thin films2001
- Author(s)
  J.-Y.Rosaye, P.Mialhe, J.-P.Charles, M.Sakashita, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Active and Passive Elec.Comp. 24
  
  Pages: 169-175
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Local electrical characteristics of ultra-thin SiO_2 films formed on Si(100) surfaces2001
- Author(s)
  H.Ikeda, N.Kurumado, K.Ohmori, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Surface Science 493
  
  Pages: 653-658
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Control of Ni/Si interfacial reaction and NiSi technology for ULSI applications
- Author(s)
  S.Zaima, O.Nakatsuka, A.Sakai, Y.Yasuda
- Journal Title
  
  Proceedings of IUMRS International Conference in Asia 2004 (印刷中)
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, S.Zaima, J.Murota, Y.Yasuda
- Journal Title
  
  Proceedings of Advanced Metallization Conference 2004 (AMC2004) (印刷中)
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction
- Author(s)
  A.Sakai, S.Mochizuki, N.Taoka, O.Nakatsuka, S.Takeda, S.Kimura, M.Ogawa, S.Zaima
- Journal Title
  
  Thin Solid Films (印刷中)
- Data Source
  KAKENHI-PROJECT-16360005
[Patent] メモリスタ、それを備えた半導体素子およびメモリスタを備えたアレイシステム2020
- Inventor(s)
  林侑介、藤平哲也、酒井朗
- Industrial Property Rights Holder
  林侑介、藤平哲也、酒井朗
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2020-214807
- Filing Date
  2020
- Data Source
  KAKENHI-PROJECT-20H00248
[Patent] メモリスタおよびそれを備えたアレイシステム2019
- Inventor(s)
  林侑介、藤平哲也、酒井朗
- Industrial Property Rights Holder
  大阪大学
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-17H03236
[Patent] 多層膜構造体の形成方法2008
- Inventor(s)
  中塚理、酒井朗、小川正毅, (他4名)
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2008-122891
- Filing Date
  2008
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 伸張歪ゲルマニウム薄膜の作製方法、伸張歪ゲルマニウム薄膜、及び多層膜構造体2007
- Inventor(s)
  竹内正太郎, 酒井朗, 中塚理, 小川正毅, 財満鎭明
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2007-05-17
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 伸張歪ゲルマニウム薄膜の作製方法、伸張歪ゲルマニウム薄膜、及び多層膜構造体2007
- Inventor(s)
  竹内正太郎, 酒井朗, 中塚理、ほか2名
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2007-132189
- Filing Date
  2007-05-23
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 多層膜構造体の形成方法2007
- Inventor(s)
  中塚理、酒井朗、小川正毅、財満鎭明、近藤博基、湯川勝規、水谷卓也
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2007
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 歪み緩和ゲルマニウム膜及びその製造方法並びに多層膜構造体2005
- Inventor(s)
  酒井朗,他4名
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2005-355102
- Filing Date
  2005-12-08
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Patent] 歪緩和ゲルマニウム膜及びその製造方法並びに多層膜構造体2005
- Inventor(s)
  酒井朗, 湯川勝規, 中塚理, 小川正毅, 財満鎭明
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2005-355102
- Filing Date
  2005-12-08
- Data Source
  KAKENHI-PROJECT-16360005
[Patent] エピタキシャル成長用基材及びその製造方法並びに多層膜構造体2004
- Inventor(s)
  酒井朗, 田岡紀之, 他3名
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2004-207782
- Filing Date
  2004-07-14
- Data Source
  KAKENHI-PROJECT-16360005
[Patent] エピタキシャル成長用基材及びその製造方法並びに多層膜構造体2004
- Inventor(s)
  酒井朗,他4名
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2004-207782
- Filing Date
  2004-07-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Presentation] 4端子平面型TiO2-xメモリスタの微細化とパブロフ型条件付け次元拡張2024
- Author(s)
  山本遼平、林侑介、藤平哲也、酒井朗
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Implementation of Operant Conditioning in Four-Terminal Planar TiO2-x Memristive Devices2024
- Author(s)
  Zijie Meng, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] アモルファスGaOxを用いた4端子クロスバーアレイメモリスタの開発と抵抗変化特性2024
- Author(s)
  山下真矢、林侑介、藤平哲也、酒井朗
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] その場TEMによる単結晶TiO2-xメモリスタ素子における剪断面形成機構の解析2023
- Author(s)
  高田玲、藤平哲也、林侑介、酒井朗
- Organizer
  日本顕微鏡学会第79回学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Implementation of Pavlovian Conditioning with TiO2-x Miniaturized Four-Terminal Planar Memristors2023
- Author(s)
  Ryohei Yamamoto, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
- Organizer
  2023 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Finite Element Analysis of Oxygen Vacancy Behavior in Four-Terminal TiO2-x Memristive Devices2023
- Author(s)
  Yuki Koizumi, Ryotaro Miyake, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
- Organizer
  2023 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Analysis of Shear Plane Formation Mechanism in Single Crystal TiO2-x Memristor by Using In-Situ TEM Observation2023
- Author(s)
  Rei Takada, Tetsuya Tohei, Yusuke Hayashi, Akira Sakai
- Organizer
  International Workshop on Advanced and In-Situ Microscopies of Functional Nanomaterials and Devices (IAMNano) 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] ルチル型TiO2中の剪断面構造及び酸素空孔挙動に関する第一原理計算2023
- Author(s)
  二宮雅輝、藤平哲也、林侑介、酒井朗
- Organizer
  第70回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] 4端子平面型TiO2-xメモリスタにおける酸素空孔挙動の有限要素法解析2023
- Author(s)
  小泉優紀、三宅亮太郎、林侑介、藤平哲也、酒井朗
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Amorphous GaOx Crossbar Array Memristors for Artificial Synaptic Devices2022
- Author(s)
  Naoki Masaoka, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
- Organizer
  2022 International Conference on Solid-State Devices and Materials
- Data Source
  KAKENHI-PROJECT-21K18723
[Presentation] 平面型TiO2-xメモリスタ素子における抵抗変化領域のその場TEM観察2022
- Author(s)
  谷口奈穂，林侑介, 藤平哲也，酒井朗
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] First-Principles Analysis of Oxygen Vacancy Behavior in Rutile TiO2 under External Electric Fields2022
- Author(s)
  Masaki Ninomiya, Yusuke Hayashi, Akira Sakai, Tetsuya Tohei
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] アモルファスGaOxを用いたクロスバーアレイメモリスタの抵抗変化特性2022
- Author(s)
  正岡直樹, 林侑介, 藤平哲也, 酒井朗
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] GaOxメモリスタの抵抗スイッチング特性評価2022
- Author(s)
  佐藤健人，林侑介, 藤平哲也，酒井朗
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] 酸素空孔分布制御型メモリスタを用いた多機能人工シナプス2022
- Author(s)
  酒井朗、林侑介、藤平哲也
- Organizer
  第69回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-21K18723
[Presentation] 第一原理計算によるルチル型TiO2中の剪断面構造及び酸素空孔挙動の解析2022
- Author(s)
  二宮雅輝、藤平哲也、林侑介、酒井朗
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] 酸素空孔分布制御型メモリスタを用いた多機能人工シナプス2022
- Author(s)
  酒井朗，藤平哲也，林侑介
- Organizer
  第69回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Amorphous GaOx Crossbar Array Memristors for Artificial Synaptic Devices2022
- Author(s)
  Naoki Masaoka, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
- Organizer
  2022 International Conference on Solid-State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] ナノビームX線回折によるHVPE-GaNバルク結晶における単独貫通転位周辺の局所歪解析2021
- Author(s)
  濱地威明、藤平哲也、林侑介、宇佐美茂佳、今西正幸、森勇介、隅谷和嗣、今井康彦、木村滋、酒井朗
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 第一原理計算手法に基づく外部電場下におけるルチル型TiO2中の酸素空孔挙動の解析2021
- Author(s)
  二宮雅輝、藤平哲也、林侑介、酒井朗
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K18723
[Presentation] Habituation and sensitization properties mimicked in four-terminal TiO2-x memristive devices2021
- Author(s)
  K. Adachi, Y. Hayashi, T. Tohei, A. Sakai
- Organizer
  MEMRISYS 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18723
[Presentation] AlGaN/GaN HEMTデバイスにおける局所圧電格子変形の放射光ナノビームX線回折オペランド計測2021
- Author(s)
  塩見春奈、嶋田章宏、藤平哲也、林侑介、金木奨太、橋詰保、今井康彦、隅谷和嗣、木村滋、酒井朗
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Operando analysis of local strain induced by inverse piezoelectric effect in AlGaN/GaN HEMT using synchrotron radiation nanobeam X-ray diffraction2021
- Author(s)
  A. Sakai
- Organizer
  SPIE Photonics West 2021, OE107, Gallium Nitride Materials and Devices XVI
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Structural analysis of Na-flux GaN by nanobeam X-ray diffraction: Local lattice constant variation depending on the growth sector2021
- Author(s)
  Z. D. Wu, K. Shida, T. Hamachi, Y. Hayashi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Depth-resolved three-dimensional characterization of semiconductor materials using nanobeam X-ray diffraction combined with differential-aperture technique2021
- Author(s)
  Y. Imai, K. Sumitani, S. Kimura, T. Hamachi, K. Shida, T. Tohei, H. Miyake, and A. Sakai
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Advanced analysis of singularity structures in semiconductor materials and devices by synchrotron radiation nanobeam X-ray diffraction2021
- Author(s)
  A. Sakai, Y. Imai, Y. Hayasahi, and T. Tohei
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Pavlovian conditioning implemented in four-terminal TiO2-x memristive devices2021
- Author(s)
  R. Miyake, K. Adachi, Y. Hayashi, T. Tetsuya, A. Sakai
- Organizer
  4th International Conference on Memristive Materials, Devices & Systems
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Sputtered and annealed AlN templates for photonic and electronic devices2021
- Author(s)
  Y. Hayashi, R. Chaudhuri, Y. Cho, H. G. Xing, D. Jena, H. Miyake, T. Tohei, and A. Sakai
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Heterosynaptic Property Demonstrated with Planer Four-Terminal Amorphous GaOx Memristive Devices2021
- Author(s)
  Taishi Ikeuchi, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
- Organizer
  2021 International Conference on Solid-State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Space- and time-revolved synchrotron X-ray diffraction for analysis of singularity structures in semiconductor materials2021
- Author(s)
  A. Sakai, Y. Hayashi, T. Tohei, and Y. Imai
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Analysis of stress and impurity evolution related to growth sector in Na-flux GaN by nanobeam X-ray diffraction2021
- Author(s)
  Z. D. Wu, T. Hamachi, Y. Hayashi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 4端子平面型アモルファスGaOxメモリスタ素子の開発と抵抗変化特性評価2021
- Author(s)
  池内太志、林侑介、藤平哲也、酒井朗
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] 第一原理計算手法に基づく外部電場下におけるルチル型TiO2中の酸素空孔挙動の解析2021
- Author(s)
  二宮雅輝，藤平哲也，林侑介，酒井朗
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] ナノビームX線回折法によるNPSS上AlN厚膜の深さ分解結晶性トモグラフィック評価第2021
- Author(s)
  山本望、林侑介、濱地威明、中西悠太、藤平哲也、隅谷和嗣、今井康彦、木村滋、正直花奈子、三宅秀人、酒井朗
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Pavlovian conditioning implemented in four-terminal TiO2-x memristive devices2021
- Author(s)
  R. Miyake, K. Adachi, Y. Hayashi, T. Tohei, A. Sakai
- Organizer
  MEMRISYS 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18723
[Presentation] ナノビームX線回折によるOVPE成長GaN結晶の微細構造解析2021
- Author(s)
  栗谷淳、藤平哲也、濱地威明、林侑介、滝野淳一、隅智亮、宇佐美茂佳、今西正幸、森勇介、隅谷和嗣、今井康彦、木村滋、酒井朗
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 4端子平面型TiO2-xメモリスタ素子におけるゲート制御に基づくシナプス特性の変調2021
- Author(s)
  安達健太、林侑介、藤平哲也、酒井朗
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Habituation and sensitization properties mimicked in four-terminal TiO2-x memristive devices2021
- Author(s)
  K. Adachi, Y. Hayashi, T. Tohei, A. Sakai
- Organizer
  4th International Conference on Memristive Materials, Devices & Systems
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Temperature-Dependent Resistive Switching Properties of GaOx Memristors up to 600 K2021
- Author(s)
  Kento Sato, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
- Organizer
  2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES ─ Science and Technology ─
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] Nano-patterned sapphire substrate上のスパッタ堆積アニールAlNテンプレートを用いたAlN厚膜の欠陥構造解析2020
- Author(s)
  山本望、濱地威明、林侑介、藤平哲也、三宅秀人、酒井朗
- Organizer
  応用物理学会関西支部2019年第3回支部講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Systematical analysis in local lattice constant variation depending on stress and impurity evolution in Na-flux GaN2020
- Author(s)
  Z. D. Wu, K. Shida, Y. Hayashi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai
- Organizer
  第3回結晶工学×ISYSE 合同研究会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] HVPE-GaNバルク結晶における貫通転位の3次元的形態とバーガースベクトルの関係2020
- Author(s)
  濱地威明、藤平哲也、林侑介、今西正幸、森勇介、五十嵐信行、酒井朗
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] OVPE法で成長した GaN バルク単結晶の微細構造解析2020
- Author(s)
  栗谷淳、藤平哲也、濱地威明、林侑介、滝野淳一、隅智亮、今西正幸、森勇介、隅谷和嗣、今井康彦、木村滋、酒井朗
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 高Ge添加NaフラックスGaN結晶の特異構造解析2020
- Author(s)
  古賀一朗、林侑介、藤平哲也、佐藤隆、三好直哉、村上明繁、皿山正二、今井康彦、隅谷和嗣、木村滋、酒井朗
- Organizer
  応用物理学会関西支部2019年第3回支部講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 4端子平面型 TiO2-xメモリスタ素子における酸素空孔分布2次元制御に基づくSTP・LTP特性の実装2020
- Author(s)
  安達健太、三宅亮太郎、林侑介、藤平哲也、酒井朗
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] スパッタ法と高温アニールで作製した－c/+c AlN薄膜の電子線回折による極性判定2020
- Author(s)
  林侑介、野本健斗、濱地威明、藤平哲也、三宅秀人、五十嵐信行、酒井朗
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] N-PSS上スパッタ堆積アニールAlNテンプレートに成長させたAlN厚膜の微細構造解析2020
- Author(s)
  山本望、濱地威明、林侑介、藤平哲也、三宅秀人、酒井朗
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ナノビームX線回折法による高Ge組成SiGe／組成傾斜SiGe／Si積層構造の深さ分解結晶性トモグラフィック評価2020
- Author(s)
  志田和己、藤平哲也、林侑介、隅谷和嗣、今井康彦、木村滋、酒井朗
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 高温熱処理したスパッタAlN膜の熱歪解析2020
- Author(s)
  林侑介、上杉謙次郎、正直花奈子、三宅秀人、藤平哲也、酒井朗
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Oxide-Vapor-Phase-Epitaxy法で成長したGaNバルク単結晶の微細構造解析2020
- Author(s)
  栗谷淳、藤平哲也、志田和己、濱地威明、林侑介、滝野淳一、隅智亮、今西正幸、森勇介、隅谷和嗣、今井康彦、木村滋、酒井朗
- Organizer
  応用物理学会関西支部2019年第3回支部講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Structural analysis of Na-flux GaN by nanobeam X-ray diffraction2020
- Author(s)
  Z. D. Wu, K. Shida, T. Hamachi, Y. Hayashi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai
- Organizer
  日本結晶成長学会ナノエピ分科会「第12回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Structural analysis of Na flux GaN by nanobeam X ray diffraction: Local lattice constant variation depending on the growth mode2020
- Author(s)
  Z. D. Wu, K. Shida, T. Hamachi, Y. Hayashi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] HVPE-GaNバルク結晶におけるa及びa+cタイプ貫通転位の3次元的伝播挙動の解析2020
- Author(s)
  濱地威明、藤平哲也、林侑介、今西正幸、森勇介、酒井朗
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Na-flux-GaN上に育成したHVPE-GaNバルク単結晶における貫通転位の形態と漏れ電流特性の評価2020
- Author(s)
  濱地威明、藤平哲也、林侑介、今西正幸、森勇介、酒井朗
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] アモルファス酸化ガリウムを用いたメモリスタの抵抗変化特性およびシナプス特性2020
- Author(s)
  上甲守治、池内太志、林侑介、藤平哲也、酒井朗
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00248
[Presentation] 放射光ナノビームX線回折による窒化物半導体HEMTデバイスにおける圧電応答局所格子変形ダイナミクスの観測2019
- Author(s)
  植田瑛、藤平哲也、安藤祐也、橋詰保、今井康彦、隅谷和嗣、木村滋、酒井朗
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 放射光ナノビームX線回折を用いた半導体材料・デバイスの構造解析2019
- Author(s)
  酒井朗，志田和己，植田瑛，藤平哲也，今井康彦，隅谷和嗣，木村滋
- Organizer
  第66回応用物理学会春季学術講演会,結晶工学×放射光シンポジウム
- Invited
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ドナー密度分布制御型メモリスタ素子における抵抗変化機構の有限要素法シミュレーション2019
- Author(s)
  永田善也，藤平哲也，酒井朗
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K18881
[Presentation] ハイドライド気相成長GaNバルク単結晶の単独貫通転位における漏れ電流評価2019
- Author(s)
  濱地威明、藤元聖人、藤平哲也、林侑介、今西正幸、森勇介、酒井朗
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Multilateral investigation of electrical and microstructural properties of threading dislocations in Na-flux-grown GaN crystals2019
- Author(s)
  Hamachi T、Tohei T、Imanishi M、Mori Y、Sakai A
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] NaフラックスGaNバルク単結晶における貫通転位の結晶構造と漏れ電流の関連性2019
- Author(s)
  濱地威明、藤平哲也、今西正幸、森勇介、酒井朗
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Microstructure analysis of FFC-GaN crystal2019
- Author(s)
  Wu Zhendong、Shida Kazuki、Hamachi Takeaki、Tohei Tetsuya、Hayashi Yusuke、Imanishi Masayuki、Mori Yusuke、Sumitani Kazushi、Imai Yasuhiko、Kimura Shigeru、Sakai Akira
- Organizer
  応用物理学会関西支部2019年第2回支部講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] HVPE-GaNバルク単結晶中貫通転位における漏れ電流特性に及ぼす転位構造の影響2019
- Author(s)
  濱地威明、藤元聖人、藤平哲也、林侑介、今西正幸、森勇介、酒井朗
- Organizer
  第2回結晶工学×ISYSE 合同研究会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ドナー密度分布制御型メモリスタ素子における抵抗変化機構の有限要素法シミュレーション2019
- Author(s)
  永田善也，藤平哲也，酒井朗
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] 4端子TiO2-x薄膜メモリスタ素子によるシナプス特性の実装2019
- Author(s)
  三宅亮太郎、林侑介、藤平哲也、酒井朗
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] TiO2-xエピタキシャル薄膜を用いた４端子メモリスタ素子の抵抗変化特性2019
- Author(s)
  三宅亮太郎，藤平哲也，酒井朗
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] Atomic and electronic structure analysis of resistive switching regions in rutile TiO2-x based four-terminal memristive devices2019
- Author(s)
  Isaka Tsuyoshi、Tohei Tetsuya、Shimizu Takuma、Takeuchi Shotaro、Ikarashi Nobuyuki、Sakai Akira
- Organizer
  International Conference on Materials and Systems for Sustainability 2019（ICMaSS 2019）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] NaフラックスGaNバルク単結晶の単独転位における漏れ電流特性とバーガースベクトルの解析2019
- Author(s)
  濱地威明, 藤平哲也, 今西正幸, 森勇介, 酒井朗
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 近赤外波長変換に向けた+c AlN/-c AlN構造の作製2019
- Author(s)
  林侑介、上杉謙次郎、正直花奈子、片山竜二、酒井朗、三宅秀人
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Depth-resolved three-dimensional characterization of semiconductors using nanobeam X-ray diffraction combined with a differential-aperture technique2019
- Author(s)
  Imai Y、Sumitani K、Kimura S、Shida K、Tohei T、Sakai A
- Organizer
  The 8th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] HVPE-GaNバルク単結晶における貫通転位の構造と漏れ電流の関連性2019
- Author(s)
  濱地威明、藤元聖人、藤平哲也、林侑介、今西正幸、森勇介、酒井朗
- Organizer
  第3回電子材料若手交流会（ISYSE）研究会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 4端子平面型TiO2-xメモリスタ素子におけるパブロフ型条件付けの実装2019
- Author(s)
  三宅亮太郎、林侑介、藤平哲也、酒井朗
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] Fabrication of +c/-c AlN Structure toward IR Wavelength Conversion2019
- Author(s)
  Hayashi Y、Uesugi K、Shojiki K、Katayama R、 Sakai A、Miyake H
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] GaOxを用いたクロスバーアレイメモリスタの開発と抵抗変化特性2019
- Author(s)
  上甲守治、林侑介、藤平哲也、酒井朗
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] OVPE法によるホモエピタキシャルGaN厚膜の欠陥構造評価2019
- Author(s)
  真鍋海希，藤平哲也 , 滝野淳一, 隅智亮, 今西正幸, 森勇介, 酒井朗
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Operando analysis of local piezoelectric lattice distortion in AlGaN/GaN HEMT devices using synchrotron radiation nanobeam X-ray diffraction2019
- Author(s)
  Ueda A、Shiomi H、Tohei T、Ando Y、Hashizume T、Imai Y、Sumitani K、Kimura S、Sakai A
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] TiO2-xエピタキシャル薄膜を用いた４端子メモリスタ素子の抵抗変化特性2019
- Author(s)
  三宅亮太郎，藤平哲也，酒井朗
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K18881
[Presentation] Oxygen vacancy distribution control for resistive switching of epitaxial TiO2-x thin films in four-terminal memristive devices2019
- Author(s)
  Miyake Ryotaro、Nagata Zenya、Tohei Tetsuya、Sakai Akira
- Organizer
  2019 International Conference on Solid State Devices and Materials（SSDM2019）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] Fabrication of GaOx Based Crossbar Array Memristive Devices and Their Resistive Switching Properties2019
- Author(s)
  Joko Mamoru、Hayashi Yusuke、Tohei Tetsuya、Sakai Akira
- Organizer
  2019 International Workshop on Dielectric Thin Films for future electron devices -science and technology-（IWDTF 2019）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] 放射光ナノビームX線回折による窒化物半導体HEMTデバイスにおける圧電応答局所格子変形の直接観測2019
- Author(s)
  植田瑛，藤平哲也，安藤祐也，橋詰保，今井康彦，隅谷和嗣，木村滋，酒井朗
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 組成傾斜層を有するSi基板上高Ge組成SiGe膜の深さ分解ナノビームX線回折評価2019
- Author(s)
  志田和己、藤平哲也、林侑介、隅谷和嗣、今井康彦、木村滋、酒井朗
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Defect structure analysis of OVPE grown homoepitaxial GaN thick film2019
- Author(s)
  Tohei T、Manabe M、Takino J、Sumi T、Imanishi M、Mori Y、Sakai A
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 窒化物半導体中の格子欠陥が生み出す特異構造の3次元解析2018
- Author(s)
  酒井朗，志田和己，竹内正太郎，藤平哲也，今井康彦，木村滋
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 圧電応答顕微鏡法によるNaフラックス成長GaN単結晶の局所圧電物性解析圧電応答顕微鏡法によるNaフラックス成長GaN単結晶の局所圧電物性解析2018
- Author(s)
  植田瑛, 竹内正太郎, 藤平哲也, 今西正幸, 森勇介, 酒井朗
- Organizer
  平成30年度応用物理学会第2回関西支部講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Nanobeam X-ray Diffraction Analysis of Local Lattice Distortions in the Growth Direction of a Modified Na-Flux GaN Bulk Crystal2018
- Author(s)
  Shida K, Takeuchi S, Tohei T, Imanishi M, Mori Y, Sumitani K, Imai Y, Kimura S, Sakai A
- Organizer
  International Symposium on Growth of III-Nitrides (ISGN-7)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Defect characterization in nitride semiconductor bulk materials2018
- Author(s)
  Sakai A
- Organizer
  The International Workshop on Nitride Semiconductors 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Gate-tuning of synaptic functions based on the oxygen vacancy distribution control in four-terminal TiO2-x memristive devices2018
- Author(s)
  Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Akira Sakai
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] Dislocation Properties in Bulk GaN Substrates2018
- Author(s)
  Sakai A
- Organizer
  IDGN-4
- Invited
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] OVPE法によるホモエピタキシャルGaN厚膜の欠陥構造評価2018
- Author(s)
  真鍋海希，藤平哲也，滝野淳一，隅智亮，今西正幸，森勇介，酒井朗
- Organizer
  平成30年度応用物理学会第2回関西支部講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Leakage current analysis for individual dislocations in the modified Na-flux GaN bulk single crystal2018
- Author(s)
  Hamachi T, Takeuchi S, Tohei T, Imanishi M, Mori Y, Sakai A
- Organizer
  International Symposium on Growth of III-Nitrides (ISGN-7)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Demonstrative operation of four-terminal memristive devices by controlling oxygen vacancy distribution in TiO2-x single crystals2018
- Author(s)
  Akira Sakai, Takuma Shimizu, Masato Shimotani, Shotaro Takeuchi, Tetsuya Tohei
- Organizer
  2018 MRS Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] Gate-Tuning of Synaptic Function Based on the Oxygen Vacancy Distribution Control in Four-Terminal TiO2-x Memristive Devices2018
- Author(s)
  Nagata Z, Shimizu T, Isaka T, Tohei T, Sakai A
- Organizer
  International Conference on Solid State Devices and Materials 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K18881
[Presentation] 酸素空孔分布制御型4 端子メモリスタ素子の抵抗変化特性精密制御2018
- Author(s)
  清水拓磨，永田善也，竹内正太郎，藤平哲也，酒井朗
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K18881
[Presentation] ゲート制御型4端子TiO2-xメモリスタによる可変シナプス機能の実装2018
- Author(s)
  永田善也，清水琢磨，井坂健，藤平哲也，酒井朗
- Organizer
  平成30年度応用物理学会第2回関西支部講演会
- Data Source
  KAKENHI-PROJECT-17K18881
[Presentation] ナノビームX線回折を用いた組成傾斜層を有する高Ge組成SiGe膜の結晶深さ方向格子面微細構造トモグラフィック解析2018
- Author(s)
  志田和己，竹内正太郎，藤平哲也，今井康彦，木村滋，Schluze Andreas，Caymax Matty，酒井朗
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 改良型Na フラックスGaN 単結晶内の単独転位における漏れ電流特性評価2018
- Author(s)
  濱地威明，竹内正太郎，藤平哲也, 今西正幸, 今出完, 森勇介, 酒井朗
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 酸素空孔分布制御型4端子メモリスタ素子における抵抗変化機構の有限要素法シミュレーション2018
- Author(s)
  永田善也，清水拓磨，竹内正太郎，藤平哲也，酒井朗
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K18881
[Presentation] Three-dimensional Analysis of Defect-related Singularity Structures in Semiconductor Materials2018
- Author(s)
  Sakai A, Takeuchi S, Shida K, Kamada S, Tohei T, Imai Y, Kimura S, Miyake H, Hiramatsu K
- Organizer
  OIST-Singularity Project Joint Workshop
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Tomographic mapping analysis of lattice distortions in the depth direction of high-Ge-content SiGe films with compositionally graded buffer layers using nanobeam X-ray diffraction2018
- Author(s)
  Shida K，Takeuchi S, Tohei T, Imai Y, Kimura S, Schulze A, Caymax M, Sakai A
- Organizer
  1st Joint ISTDM/ICSI 2018 Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ナノビームX線回折法による改良型NaフラックスGaNバルク単結晶の深さ方向結晶構造解析2018
- Author(s)
  志田和己，山本望，藤平哲也，今西正幸，森勇介，隅谷和嗣，今井康彦，木村滋，酒井朗
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] FIBおよびイオンミリング試料作製法による酸化チタン単結晶メモリスタの微細構造解析2018
- Author(s)
  藤平哲也，山口賢吾，村上弘弥，竹内正太郎，酒井朗
- Organizer
  大阪大学ナノテクノロジー設備供用拠点微細構造解析プラットフォーム地域セミナー
- Invited
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] Sakai A, Shimizu T, Shimotani M, Takeuchi S, Tohei T Demonstrative operation of four-terminal memristive devices by controlling oxygen vacancy distribution in TiO2-x single crystals2018
- Author(s)
  Sakai A, Shimizu T, Shimotani M, Takeuchi S, Tohei T
- Organizer
  2018 MRS Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K18881
[Presentation] Three-dimensional structural and defect analysis by nanobeam X-ray diffraction for semiconductor materials2018
- Author(s)
  Sakai A
- Organizer
  THERMEC'2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction2018
- Author(s)
  Shida K, Tohei T, Imanishi M, Mori Y, Sumitani K, Imai Y, Kimura S, Sakai A
- Organizer
  International Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 改良型NaフラックスGaN単結晶内単独転位の漏れ電流特性解析2018
- Author(s)
  濱地威明，藤平哲也，今西正幸，森勇介，酒井朗
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Local electrical and structural analysis for threading dislocations in the modified Na-flux GaN bulk single crystals2018
- Author(s)
  Hamachi T, Tohei T, Imanishi M, Mori Y, Sakai A
- Organizer
  International Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 圧電応答顕微鏡法によるNa フラックスGaN 単結晶の局所圧電物性解析2017
- Author(s)
  植田瑛, 竹内正太郎, 今西正幸, 今出完, 森勇介, 酒井朗
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Resistive switching characteristics of four-terminal TiO2-x single crystal memristive devices2017
- Author(s)
  Shimizu Takuma, Takeuchi Shotaro, Tohei Tetsuya, Sakai Akira
- Organizer
  2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K18881
[Presentation] NaフラックスGaN単結晶内の孤立転位に起因した局所漏れ電流特性評価2017
- Author(s)
  濱地威明, 竹内正太郎, 今西正幸, 今出完, 森勇介, 酒井朗
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ルチル型TiO2単結晶メモリスタ微細素子における抵抗変化領域の結晶構造解析2017
- Author(s)
  村上弘弥，山口賢吾，清水拓磨，竹内正太郎，酒井朗
- Organizer
  日本電子顕微鏡学会第73回学術講演会
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] ルチル型TiO2単結晶メモリスタ素子の抵抗変化領域における価電子状態解析2017
- Author(s)
  山口賢吾、竹内正太郎、五十嵐信行、酒井朗
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Characterization of local piezoelectric property in Na-flux GaN bulk single crystals2017
- Author(s)
  Ueda A, Takeuchi S, Tohei T, Imanishi M, Imade M, Mori Y, Sakai A
- Organizer
  29th International Conference on Defects in Semiconductors (ICDS29)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ルチル型TiO2単結晶の酸素空孔分布による抵抗変化の繰返し特性2017
- Author(s)
  清水拓磨、竹内正太郎、酒井朗
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ナノビームX線回折法による高Ge組成SiGe／組成傾斜SiGeの結晶深さ方向断層マッピング解析2017
- Author(s)
  志田和己，竹内正太郎，今井康彦，木村滋，Andreas Schulze，Matty Caymax，酒井朗
- Organizer
  応用物理学会結晶工学分科会第6回結晶工学未来塾
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Analysis of Ti valence state in resistive switching region of rutile TiO2-x four-terminal memristive device2017
- Author(s)
  Yamaguchi Kengo, Takeucni Shotaro, Tohei Tetsuya, Ikarashi Nobuyuki, Sakai Akira
- Organizer
  2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] Valence state analysis of Ti in resistive switching region of rutile TiO2-x single crystals memristor2017
- Author(s)
  Yamaguchi Kengo, Takeuchi Shotaro, Shimizu Takuma, Tohei Tetsuya, Ikarasi Nobuyuki, Sakai Akira
- Organizer
  International Conference on Materials and Systems for Sustainability 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] In depth microstructural analysis of heteroepitaxial AlN thick films grown on trench-patterned templates by nanobeam X-ray diffraction2017
- Author(s)
  Shida K, Takeuchi S, Tohei T, Miyake H, Hiramatsu K, Sumitani K, Imai Y, Kimura S, Sakai A
- Organizer
  29th International Conference on Defects in Semiconductors (ICDS29)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ナノビームX線回折法による周期溝加工基板上AlN厚膜の結晶深さ方向構造解析2017
- Author(s)
  志田和己，竹内正太郎，三宅秀人，平松和政，隅谷和嗣，今井康彦，木村滋，酒井朗
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Nano beam X-ray diffraction analysis of Na flux GaN bulk crystals grown with controlling seed crystal surfaces and growth mode2017
- Author(s)
  Takeuchi S, Mizuta Y, Imanishi M, Imade M, Mori Y, Imai Y, Kimura S, Sakai A
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Control of dislocation propagation behaviors in Na-flux GaN bulk crystals2017
- Author(s)
  Takeuchi S, Mizuta Y, Imanishi M, Imade M, Imai Y, Kimura S, Mori Y, Sakai A
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] 4端子TiO2単結晶メモリスタの抵抗変化特性2017
- Author(s)
  清水拓磨，竹内正太郎，藤平哲也，酒井朗
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K18881
[Presentation] ルチル型TiO2単結晶メモリスタ微細素子における抵抗変化領域の結晶構造解析2017
- Author(s)
  山口賢吾，村上弘弥，清水拓磨，竹内正太郎，藤平哲也，酒井朗
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] TEM Microstructure Analysis of Resistive Switching Regions in Rutile TiO2 Single Crystal Memristors2017
- Author(s)
  Tohei Tetsuya, Murakami Hiroya, Yamaguchi Kengo, Shimizu Takuma, Takeuchi Shotaro, Sakai Akira
- Organizer
  The 3rd East-Asia Microscopy Conference (EAMC3)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03236
[Presentation] Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy2017
- Author(s)
  Hamachi T, Takeuchi S, Tohei T, Imanishi M, Imade M, Mori Y, Sakai A
- Organizer
  29th International Conference on Defects in Semiconductors (ICDS29)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Nano beam X-ray diffraction analysis of microstructures in Na-flux GaN bulk crystals grown with controlling seed crystal surfaces and growth mode2016
- Author(s)
  Y. Mizuta, S. Takeuchi, M. Imanishi, M. Imade, Y. Imai, S. Kimura, Y. Mori, A. Sakai
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Hawaii (USA)
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Three-dimensional reciprocal space mapping analysis for localized structures and defects in nitride semiconductor materials2016
- Author(s)
  A. Sakai, T. Takeuchi
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida (USA)
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Lattice plane microstructure analysis of Na-flux GaN bulk crystals by nanobeam X-ray diffraction2016
- Author(s)
  Y. Mizuta, S. Takeuchi, M. Imanishi, M. Imade, Y. Imai, S. Kimura, Y. Mori, A. Sakai
- Organizer
  The 20th SANKEN International The 15th SANKEN Nanotechnology Symposium
- Place of Presentation
  Knowledge Capital Congres Convention Center (Osaka・Osaka)
- Year and Date
  2016-12-12
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ルチル型TiO2単結晶の酸素空孔分布制御と抵抗変化特性2016
- Author(s)
  下谷将人、竹内正太郎、酒井朗
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25600098
[Presentation] X線マイクロ回折による種結晶表面・成長モード制御NaフラックスGaNの微視的結晶構造解析2016
- Author(s)
  水田祐貴、竹内正太郎、今西正幸、今出完、今井康彦、木村滋、森勇介、酒井朗
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Demonstration of reversible resistive switching by the control of oxygen vacancy distribution in rutile TiO2-x single crystals2016
- Author(s)
  T. Shimizu, M. Shimotani, S. Takeuchi, A. Sakai
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Hawaii (USA)
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] ルチル型TiO2単結晶の酸素空孔分布制御と抵抗変化特性2016
- Author(s)
  清水拓磨、竹内正太郎、酒井朗
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Reversible resistive switching by the voltage-driven control of oxygen vacancy distribution in four terminal planar TiO2-x-based devices2016
- Author(s)
  T. Shimizu, M. Shimotani, S. Takeuchi, A. Sakai
- Organizer
  The 20th SANKEN International The 15th SANKEN Nanotechnology Symposium
- Place of Presentation
  Knowledge Capital Congres Convention Center (Osaka・Osaka)
- Year and Date
  2016-12-12
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Nanobeam X-ray diffraction for tomographic mapping analysis of high Ge content Si1-yGey/compositionally graded Si1-xGex stacked structure2016
- Author(s)
  K. Shida, S. Takeuchi, Y. Imai, S. Kimura, A. Shulze, M. Caymax, A. Sakai
- Organizer
  The 20th SANKEN International The 15th SANKEN Nanotechnology Symposium
- Place of Presentation
  Knowledge Capital Congres Convention Center (Osaka・Osaka)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] Tomographic mapping analysis of high Ge composition SiGe layers with compositionally graded buffers by Nanobeam X-ray diffraction2016
- Author(s)
  K. Shida, S. Takeuchi, Y. Imai, S. Kimura, A. Shulze, M. Caymax, A. Sakai
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Hawaii (USA)
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06423
[Presentation] X線マイクロ回折法による半極性面(20-21)GaN厚膜の欠陥分布評価2015
- Author(s)
  内山星郎，竹内正太郎，荒内琢士，橋本健宏，山根啓輔，岡田成仁，今井康彦，木村滋，只友一行，酒井朗
- Organizer
  2015年秋季第76回応用物理学会関係連合学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] ルチル型TiO2単結晶の抵抗変化特性と結晶構造変化2015
- Author(s)
  下谷将人、村上弘弥、竹内正太郎、酒井朗
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25600098
[Presentation] 貼り合わせ直接接合SrT103(001)基板の抵抗スイッチング特性評価2012
- Author(s)
  浅田遼太、Pham Phu Than Son、Kokate Nishad Vasant、吉川純、竹内正太郎、中村芳明、酒井朗
- Organizer
  シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  名古屋大学VBL(愛知県)
- Year and Date
  2012-06-21
- Data Source
  KAKENHI-PROJECT-24360017
[Presentation] Potential of Ge_<1-x>Sn_x alloys as high mobility channel materials and stressors2010
- Author(s)
  Invited: S. Takeuchi, Y. Shimura, T. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Organizer
  5th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Formation and characterization of tensile-strained Ge layers on Ge_<1-X>Sn_x buffer layers2009
- Author(s)
  S.Zaima, O.Nakatsuka, Y.Shimura, N.Tsutsui, A.Sakai
- Organizer
  The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Los Angeles, USA((招待講演))
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Formation and characterization of tensile-strained Ge layers on Ge_<1-x>Sn_x buffer layers2009
- Author(s)
  Invited: S. Zaima, O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai
- Organizer
  The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Los Angeles, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Low Temperature Growth of Ge_<1-x>Sn_x Buffer Layers for Tensile-strained Ge Layers2009
- Author(s)
  Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Organizer
  The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Los Angeles, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing2009
- Author(s)
  T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, O. Sakata
- Organizer
  The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Los Angeles, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Effect of Hydrogen on Initial Growth of Sn and Ge_<1-x>Sn_x on Ge(001) substrates2008
- Author(s)
  M. Yamazaki, O. Nakatsuka, T. Shinoda, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
  The fourth International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
  HsinChu, Taiwan
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates2008
- Author(s)
  E. Toyoda, A. Sakai, O. Nakatsuka, S. Zaima, M. Ogawa, H. Isogai, T. Senda, K. Izunome, K. Omote
- Organizer
  The fourth International SiGe Technology and Device Meeting
- Place of Presentation
  HsinChu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Microstructures in Directly Bonded Si Substrates2008
- Author(s)
  A. Sakai, Y. Ohara, T. Ueda, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda
- Organizer
  The fourth International SiGe Technology and Device Meeting
- Place of Presentation
  HsinChu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates2008
- Author(s)
  Invited: E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, K. Omote, S. Zaima
- Organizer
  The 5th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Hawaii, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Metalorganic Chemical Vapor Deposition of High-Dielectric-Constant Praseodymium Oxide Films using a Liquid Cyclopentadienyl Precursor2008
- Author(s)
  H. Kondo, S. Sakurai, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Control of Sn Precipitation and Strain relaxation in Compositionally Step-graded Ge_<1-x>Sn_x Buffer Layers for Tensile-strained Ge Layers2008
- Author(s)
  Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Surface Treatment of Ge(001) Surface by Radical Nitridation2007
- Author(s)
  H. Kondo, M. Fujita, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2007
- Author(s)
  K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第12回研究会)
- Place of Presentation
  三島市
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Strain and dislocations in group IV semiconductor heterostructures(招待講演)2007
- Author(s)
  A.Sakai, O.Nakatsuka, M.Ogawa, and S.Zaima
- Organizer
  Materials Research Society 2007 Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Defect Control for Ge/Si and Ge_<1-x>Sn_x/Ge/Si Heterostructures2007
- Author(s)
  Invited: A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面の酸素エッチングおよび酸化過程の走査トンネル顕微鏡による観察評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 小川正毅, 財満鎭明
- Organizer
  第6回・日本表面科学会中部支部・学術講演会
- Place of Presentation
  名古屋大学
- Year and Date
  2007-04-14
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] canning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2007
- Author(s)
  M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Defect Control for Ge/Si and Ge1-xSnx/Ge/Si Heterostructures (Invited)2007
- Author(s)
  A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, and S. Zaima
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo, Japan.
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Growth and Characterization of Tensile- Strained Ge Layers on Strain Relaxed Ge_<1-x>Sn_x Buffer Layers2007
- Author(s)
  Invited: O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  The 3nd international workshop on new group IV semiconductor nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates2007
- Author(s)
  S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面の酸素エッチングおよび酸化過程の走査トンネル顕微鏡による観察評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 小川正毅, 財満鎭明
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Strain and dislocations in group IV semiconductor heterostructures2007
- Author(s)
  Invited: A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
  Materials Research Society 2007 Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2007
- Author(s)
  M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Ge(001)表面の初期酸化およびエッチング過程の走査トンネル顕微鏡評価2006
- Author(s)
  若園恭伸, 山崎理弘, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Composition dependence of work function in metal (Ni, Pt)-germanide gate electrodes2006
- Author(s)
  D. Ikeno, K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  2006 International Conference on Solid State Devices and Materials
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Growth and structure evaluation of strain-relaxed Ge_<1-x>Sn_x buffer layers on virtual Ge(001) substrates2006
- Author(s)
  S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
  The Third International SiGe Technology and Device Meeting
- Place of Presentation
  Princeton, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Scanning Tunneling Microscopy Study on the Reaction of Oxygen with Clean Ge(001) Surfaces2006
- Author(s)
  A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, and M. Ogawa
- Organizer
  210th Meeting of The Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Electrical conduction characteristics of single crystal and directly-bonded Nb-doped SrTiO3
- Author(s)
  R. Asada, S. Kondo, S. Takeuchi, Y. Sugi, Y. Nakamura, A. Sakai
- Organizer
  The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
- Place of Presentation
  Fukuoka University, Fukuoka, Japan
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24360017

1. ZAIMA Shigeaki (70158947)

# of Collaborated Projects: 7 results

# of Collaborated Products: 112 results
2. NAKATSUKA Osamu (20334998)

# of Collaborated Projects: 6 results

# of Collaborated Products: 73 results
3. YASUDA Yukio (60126951)

# of Collaborated Projects: 5 results

# of Collaborated Products: 22 results
4. KONDO Hiroki (50345930)

# of Collaborated Projects: 5 results

# of Collaborated Products: 29 results
5. IKEDA Hiroya (00262882)

# of Collaborated Projects: 4 results

# of Collaborated Products: 11 results
6. SAKASHITA Mitsuo (30225792)

# of Collaborated Projects: 3 results

# of Collaborated Products: 15 results
7. OGAWA Masaki (10377773)

# of Collaborated Projects: 2 results

# of Collaborated Products: 49 results
8. WATANABE Heiji (90379115)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. NAKAMURA Yoshiaki (60345105)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
10. KIKKAWA Jun (20435754)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
11. Tadatomo Kazuyuki (10379927)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
12. YAMADA Youichi (00251033)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. OKADA Narihito (70510684)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
14. TAKEUCHI Shotaro (70569384)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
15. FUJIOKA Hiroshi (50282570)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. Mori Yusuke (90252618)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
17. 畑朋延 (50019767)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 山根啓輔 (80610815)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
19. 川上養一 (30214604)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 小出康夫 (70195650)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 三宅秀人 (70209881)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 橋詰保 (80149898)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 今井康彦 (30416375)

# of Collaborated Projects: 1 results

# of Collaborated Products: 47 results
24. 上殿明良 (20213374)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. 津坂佳幸 (20270473)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. 河村貴宏 (80581511)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. 藤平哲也

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results

Sakai Akira 酒井 朗

SAKAI Akira 酒井 朗

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Development of high-performance crossbar array memristors for Edge AI in extreme environmentsPrincipal Investigator

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Development of Neural Hardware with Associative Learning Capabilities for Multi-bit SignalsPrincipal Investigator

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Artificial synaptic crossbar array memristors with interneuron functionPrincipal Investigator

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Heterosynaptic platform functionalized by topological control of oxygen vacancy distribution in memristive devicesPrincipal Investigator

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Topological control of oxygen vacancy distribution in memristive materials for hypercomplex synaptic devicesPrincipal Investigator

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Synaptic platform for neuromorphic computing developed by functional defect engineering in memristive devicesPrincipal Investigator

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Multiscale characterization of singularity structures and behaviors thereofPrincipal Investigator

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Four terminal memristor devices for correlation-based synaptic signal transductionPrincipal Investigator

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Investigation of mechanism of electrical conduction via functionalized dislocation networks in atomically-bonded metal-oxide crystalsPrincipal Investigator

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Sakai Akira 酒井朗

SAKAI Akira 酒井朗