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Takenaka Mitsuru  竹中 充

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TAKENAKA Mitsuru  竹中 充

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Researcher Number 20451792
Other IDs
Affiliation (Current) 2025: 東京大学, 大学院工学系研究科(工学部), 教授
Affiliation (based on the past Project Information) *help 2020 – 2024: 東京大学, 大学院工学系研究科(工学部), 教授
2016 – 2018: 東京大学, 大学院工学系研究科(工学部), 准教授
2016: 東京大学, 大学院工学系研究科, 准教授
2011 – 2016: 東京大学, 工学(系)研究科(研究院), 准教授
2013: 東京大学, 大学院工学系研究科, 准教授 … More
2013: 東京大学, 工学系研究科, 准教授
2010: 東京大学, 工学系研究科, 准教授
2007 – 2010: 東京大学, 大学院・工学系研究科, 准教授
2007: The University of Tokyo, 大学院・工学系研究科, 講師 Less
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Medium-sized Section 21:Electrical and electronic engineering and related fields / Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related
Except Principal Investigator
Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties / Engineering / Science and Engineering / Science and Engineering
Keywords
Principal Investigator
光集積回路 / 化合物半導体 / センシング / ゲルマニウム / 中赤外光 / 光変調器 / CMOSフォトニクス / III-V族半導体 / 量子井戸混合 / コンピューティング … More / 光通信 / 光デバイス / 光電子融合集積回路 / ウェハボンディング / シリコンフォトニクス / トランジスタ / III-V MOSFET / CMOS photonics / 基板貼り合わせ / MOSトランジスタ / 光スイッチ / III-V-OI基板 / 基板貼り合せ / InGaAs MOSFET / 受光器 / 細線導波路 / 光電子集積回路 / InAlAs酸化膜 / 半導体物性 / 電子デバイス・機器 / ウェット酸化 / InP / InGaAs / InAlAs / MOSFET … More
Except Principal Investigator
移動度 / MOSFET / ゲルマニウム / サブバンド / 反転層 / 結晶成長 / エネルギーバンド / IV族半導体 / Ⅳ族半導体 / 集積回路 / ゲルマニウム錫 / 表面・界面物性 / 結晶工学 / 半導体物性 / LSI / 欠陥 / 高キャリア移動度 / ひずみ / スズ / ゲートスタック / スズ(錫) / 表面・界面 / CMOS / エピタキシャル成長 / 歪 / 錫 / 酸化膜信頼性 / 界面準位 / クーロン散乱 / 表面ラフネス / ひずみSi / 強磁性 / スピン / 面方位 / GOI Less
  • Research Projects

    (12 results)
  • Research Products

    (518 results)
  • Co-Researchers

    (13 People)
  •  Development of fundamental technologies for III-V semiconductor membrane photonic integrated circuits using quantum well intermixingPrincipal Investigator

    • Principal Investigator
      竹中 充
    • Project Period (FY)
      2023 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      The University of Tokyo
  •  On-chip molecular sensing using Ge mid-infrared photonic integrated circuitPrincipal Investigator

    • Principal Investigator
      Takenaka Mitsuru
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      The University of Tokyo
  •  Optical sensing chip based on Ge mid-infrared integrated photonicsPrincipal Investigator

    • Principal Investigator
      竹中 充
    • Project Period (FY)
      2017 – 2018
    • Research Category
      Grant-in-Aid for JSPS Fellows
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      The University of Tokyo
  •  Establishment of Fundamental Engineering of Sn-related Group-IV Semiconductor Materials for Multi-Functional and Low-Power Electronics

    • Principal Investigator
      ZAIMA SHIGEAKI
    • Project Period (FY)
      2014 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Nagoya University
  •  Research on platform technologies for electronic-photonic integrated circuits based on III-V CMOS photonicsPrincipal Investigator

    • Principal Investigator
      Takenaka Mitsuru
    • Project Period (FY)
      2014 – 2017
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      The University of Tokyo
  •  Understanding of carrier transport properties of Ge-On-Insulator CMOS and establishment of performance enhancement engineering

    • Principal Investigator
      Takagi Shinichi
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The University of Tokyo
  •  Understanding of carrier transport mechanism in Ge MOS interfaces and establishment of mobility enhancement technologies

    • Principal Investigator
      TAKAGI Shinichi
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The University of Tokyo
  •  Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices

    • Principal Investigator
      ZAIMA Shigeaki
    • Project Period (FY)
      2010 – 2013
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Science and Engineering
      Engineering
    • Research Institution
      Nagoya University
  •  Construction of III-V CMOS PhotonicsPrincipal Investigator

    • Principal Investigator
      TAKENAKA Mitsuru
    • Project Period (FY)
      2010 – 2013
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      The University of Tokyo
  •  Understanding of mechanisms dominating inversion-layer mobility in strained-Si MOSFETs and establishment of guideline for the mobility enhancement

    • Principal Investigator
      TAKAGI Shinichi
    • Project Period (FY)
      2008 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The University of Tokyo
  •  III-V-OI MOS structure by using selective wet oxidation of InAlAs layerPrincipal Investigator

    • Principal Investigator
      TAKENAKA Mitsuru
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Young Scientists (Start-up)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      The University of Tokyo
  •  Nano-structure functional devices based Ge-based channels

    • Principal Investigator
      TAKAGI Shinichi
    • Project Period (FY)
      2006 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 Other

All Journal Article Presentation Patent

  • [Journal Article] Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization2024

    • Author(s)
      Sakumoto Hiroya、Nakayama Taketoshi、Miyatake Yuto、Toprasertpong Kasidit、Takagi Shinichi、Takenaka Mitsuru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 63 Issue: 2 Pages: 02SP52-02SP52

    • DOI

      10.35848/1347-4065/ad189b

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Journal Article] Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>3</sub>S<sub>2</sub>2023

    • Author(s)
      Miyatake Yuto、Makino Kotaro、Tominaga Junji、Miyata Noriyuki、Nakano Takashi、Okano Makoto、Toprasertpong Kasidit、Takagi Shinichi、Takenaka Mitsuru
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 70 Issue: 4 Pages: 2106-2112

    • DOI

      10.1109/ted.2023.3235865

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H02198, KAKENHI-PROJECT-22KJ0549
  • [Journal Article] Design of compact and low-loss S-bends by CMA-ES2023

    • Author(s)
      Miyatake Yuto、Toprasertpong Kasidit、Takagi Shinichi、Takenaka Mitsuru
    • Journal Title

      Optics Express

      Volume: 31 Issue: 26 Pages: 43850-43850

    • DOI

      10.1364/oe.504866

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-22KJ0549, KAKENHI-PROJECT-23H00172
  • [Journal Article] Efficient optical phase modulator based on an III?V metal-oxide-semiconductor structure with a doped graphene transparent electrode2022

    • Author(s)
      Piyapatarakul Tipat、Tang Hanzhi、Toprasertpong Kasidit、Takagi Shinichi、Takenaka Mitsuru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 62 Issue: SC Pages: SC1008-SC1008

    • DOI

      10.35848/1347-4065/aca59c

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Journal Article] Ge-on-insulator Platform for Mid-infrared Photonic Integrated Circuits2022

    • Author(s)
      Takenaka Mitsuru、Zhao Ziqiang、Ho Chong Pei、Fujigaki Takumi、Piyapatarakul Tipat、Miyatake Yuto、Tang Rui、Toprasertpong Kasidit、Takagi Shinichi
    • Journal Title

      ECS Transactions

      Volume: 109 Issue: 4 Pages: 47-58

    • DOI

      10.1149/10904.0047ecst

    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Journal Article] Non-volatile compact optical phase shifter based on Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> operating at 2.3 μm2022

    • Author(s)
      Miyatake Yuto、Ho Chong Pei、Pitchappa Prakash、Singh Ranjan、Makino Kotaro、Tominaga Junji、Miyata Noriyuki、Nakano Takashi、Toprasertpong Kasidit、Takagi Shinichi、Takenaka Mitsuru
    • Journal Title

      Optical Materials Express

      Volume: 12 Issue: 12 Pages: 4582-4582

    • DOI

      10.1364/ome.473987

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198, KAKENHI-PROJECT-22KJ0549
  • [Journal Article] Numerical analysis of optical phase modulator operating at 2 μm wavelength using graphene/III?V hybrid metal-oxide-semiconductor capacitor2022

    • Author(s)
      Piyapatarakul Tipat、Tang Hanzhi、Toprasertpong Kasidit、Takagi Shinichi、Takenaka Mitsuru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 61 Issue: SC Pages: SC1031-SC1031

    • DOI

      10.35848/1347-4065/ac4443

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Journal Article] Low-loss Ge waveguide at the 2-μm band on an n-type Ge-on-insulator wafer2021

    • Author(s)
      Zhao Ziqiang、Lim Cheol-Min、Ho Chongpei、Sumita Kei、Miyatake Yuto、Toprasertpong Kasidit、Takagi Shinichi、Takenaka Mitsuru
    • Journal Title

      Optical Materials Express

      Volume: 11 Issue: 12 Pages: 4097-4097

    • DOI

      10.1364/ome.444071

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Journal Article] Ge-on-insulatorを用いた近赤外・中赤外集積フォトニクス2020

    • Author(s)
      竹中充,高木信一
    • Journal Title

      レーザー研究

      Volume: 48 Pages: 535-539

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Journal Article] High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform2019

    • Author(s)
      T. Fujigaki, S. Takagi, and M. Takenaka
    • Journal Title

      Optics Express

      Volume: 27 Issue: 5 Pages: 6451-6458

    • DOI

      10.1364/oe.27.006451

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] Numerical analysis of Ge/Si hybrid MOS optical modulator operating at mid-infrared wavelength2019

    • Author(s)
      Y. Taguchi, S. Takagi, and, M. Takenaka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SB Pages: SBBE03-SBBE03

    • DOI

      10.7567/1347-4065/aafb52

    • NAID

      210000135336

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] Tunable germanium-on-insulator band-stop optical filter using thermo-optic effect2019

    • Author(s)
      C. P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka
    • Journal Title

      IEEE Photonics Journal

      Volume: 印刷中 Issue: 2 Pages: 1-1

    • DOI

      10.1109/jphot.2019.2904050

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-17F17071
  • [Journal Article] III-V/Si Hybrid MOS Optical Phase Shifter for Si Photonic Integrated Circuits2019

    • Author(s)
      Takenaka Mitsuru、Han Jae-Hoon、Boeuf Frederic、Park Jin-Kwon、Li Qiang、Ho Chong Pei、Lyu Dongsheng、Ohno Shuhei、Fujikata Junichi、Takahashi Shigeki、Takagi Shinichi
    • Journal Title

      Journal of Lightwave Technology

      Volume: 37 Issue: 5 Pages: 1474-1483

    • DOI

      10.1109/jlt.2019.2892752

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Journal Article] Design and characterization of Ge passive waveguide components on Ge-on-insulator wafer for mid-infrared photonics2018

    • Author(s)
      J. Kang, S. Takagi, and M. Takenaka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 4 Pages: 042202-042202

    • DOI

      10.7567/jjap.57.042202

    • NAID

      210000148818

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform2018

    • Author(s)
      J.-K. Park, S. Takagi, and M. Takenaka
    • Journal Title

      Optics Express

      Volume: 26 Issue: 4 Pages: 4842-4852

    • DOI

      10.1364/oe.26.004842

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate2018

    • Author(s)
      J. Kang, S. Takagi, and M. Takenaka
    • Journal Title

      Optics Express

      Volume: 26 Issue: 23 Pages: 30546-30555

    • DOI

      10.1364/oe.26.030546

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] Mid-infrared high-Q germanium microring resonator2018

    • Author(s)
      T. H. Xiao, Z. Zhao, W. Zhou, C. Y. Chang, S. Y. Set, M. Takenaka, H. K. Tsang, Z. Cheng, and K. Goda
    • Journal Title

      Optics Letters

      Volume: 43 Issue: 12 Pages: 2885-2888

    • DOI

      10.1364/ol.43.002885

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] High-Q germanium optical nanocavity2018

    • Author(s)
      Xiao Ting-Hui、Zhao Ziqiang、Zhou Wen、Takenaka Mitsuru、Tsang Hon Ki、Cheng Zhenzhou、Goda Keisuke
    • Journal Title

      Photonics Research

      Volume: 6 Issue: 9 Pages: 925-925

    • DOI

      10.1364/prj.6.000925

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K13798, KAKENHI-PROJECT-26220605
  • [Journal Article] Ultra-power-efficient 2 × 2 Si Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter2018

    • Author(s)
      Li Q.、Han J.-H.、Ho C. P.、Takagi S.、Takenaka M.
    • Journal Title

      Optics Express

      Volume: 26 Issue: 26 Pages: 35003-35003

    • DOI

      10.1364/oe.26.035003

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Journal Article] Tunable Grating Coupler by Thermal Actuation and Thermo-Optic Effect2018

    • Author(s)
      Ho Chong Pei、Zhao Ziqiang、Li Qiang、Takagi Shinichi、Takenaka Mitsuru
    • Journal Title

      IEEE Photonics Technology Letters

      Volume: 30 Issue: 17 Pages: 1503-1506

    • DOI

      10.1109/lpt.2018.2857469

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Journal Article] Low-loss graphene-based optical phase modulator operating at mid-infrared wavelength2018

    • Author(s)
      Y. Yamaguchi, S. Takagi, and M. Takenaka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 4S Pages: 04FH06-04FH06

    • DOI

      10.7567/jjap.57.04fh06

    • NAID

      210000148944

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] Numerical analysis of carrier-depletion InGaAsP optical modulator with lateral PN junction formed on III-V-on-insulator wafer2017

    • Author(s)
      N. Sekine, J.-H. Jan, S. Takagi, and M. Takenaka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 56 Issue: 4S Pages: 04CH09-04CH09

    • DOI

      10.7567/jjap.56.04ch09

    • NAID

      210000147623

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] Focusing subwavelength grating coupler for mid-infrared suspended membrane germanium waveguides2017

    • Author(s)
      J. Kang, Z. Cheng, W. Zhou, T.-H. Xiao, K.-L. Gopalakrisna, M. Takenaka, H. K. Tsang, and K. Goda
    • Journal Title

      Optics Letters

      Volume: 42 Issue: 11 Pages: 2094-2097

    • DOI

      10.1364/ol.42.002094

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] InP-based photonic integrated circuit platform on SiC wafer2017

    • Author(s)
      M. Takenaka and S. Takagi
    • Journal Title

      Optics Express

      Volume: 25 Issue: 24 Pages: 29993-30000

    • DOI

      10.1364/oe.25.029993

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] Heterogeneous CMOS Photonics Based on SiGe/Ge and III-V Semiconductors Integrated on Si Platform2017

    • Author(s)
      Mitsuru Takenaka,Younghyun Kim, Jaehoon Han, Jian Kang, Yuki Ikku, Yongpeng Cheng, Jinkwon Park, Misa Yoshida, Seiya Takashima, Shinich Takagi
    • Journal Title

      IEEE Journal of Selected Topics in Quantum Electronics

      Volume: 23 Issue: 3 Pages: 8200713-8200713

    • DOI

      10.1109/jstqe.2017.2660884

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15J08956, KAKENHI-PROJECT-26709022
  • [Journal Article] Efficient low-loss InGaAsP/Si hybrid MOS optical modulator2017

    • Author(s)
      J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka
    • Journal Title

      Nature Photonics

      Volume: 11 Issue: 8 Pages: 486-490

    • DOI

      10.1038/nphoton.2017.122

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] Mid-infrared germanium photonic crystal cavity2017

    • Author(s)
      T. H. Xiao, Z. Zhao, W. Zhou, M. Takenaka, H. K. Tsang, Z. Cheng, and K. Goda
    • Journal Title

      Optics Letters

      Volume: 42 Issue: 15 Pages: 2882-2885

    • DOI

      10.1364/ol.42.002882

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] Benchmarking Si, SiGe and III-V/Si hybrid SIS Optical Modulators for Datacenter Applications2017

    • Author(s)
      F. Boeuf, J.-H. Han, S. Takagi, and M. Takenaka
    • Journal Title

      J. Light. Technol.

      Volume: 35 Issue: 18 Pages: 4047-4055

    • DOI

      10.1109/jlt.2017.2728365

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] Evaluation of mobility degradation factors and performance improvement of ultrathin-body Germanium-on-insulator (GOI) MOSFETs by GOI thinning using plasma oxidation2016

    • Author(s)
      X. Yu, J. Kang, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices,

      Volume: 64 Issue: 4 Pages: 1418-1425

    • DOI

      10.1109/ted.2017.2662217

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Challenges and opportunities of near and mid-infrared photonics based on SiGe and Ge2016

    • Author(s)
      M. Takenaka, Y. Kim, J. Han, J. Kang, and S. Takagi
    • Journal Title

      ECS Trans.

      Volume: 75 Issue: 8 Pages: 447-459

    • DOI

      10.1149/07508.0447ecst

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-26709022
  • [Journal Article] Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation2016

    • Author(s)
      M. Ke, X. Yu, C. Chang, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 109 Issue: 3 Pages: 032101-032101

    • DOI

      10.1063/1.4958890

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut GeOI substrates2016

    • Author(s)
      X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
    • Journal Title

      Solid-State Electronics

      Volume: 115 Pages: 120-125

    • DOI

      10.1016/j.sse.2015.08.021

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer2016

    • Author(s)
      J.-K. Park, J. Han, M. Takenaka, and S. Takagi
    • Journal Title

      MRS Advances

      Volume: 48 Issue: 48 Pages: 3295-3300

    • DOI

      10.1557/adv.2016.339

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method2016

    • Author(s)
      J. Han, M. Takenaka, and S. Takagi
    • Journal Title

      J. Appl. Phys.

      Volume: 120 Issue: 12 Pages: 125707-125707

    • DOI

      10.1063/1.4963877

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J09221
  • [Journal Article] III-V/Ge MOS Device Technologies for Low Power Integrated Systems2016

    • Author(s)
      S. Takagi, M. Noguchi, M. Kim, S.-H. Kim, C.-Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke and M. Takenaka
    • Journal Title

      Solid State Electron.

      Volume: 125 Pages: 82-102

    • DOI

      10.1016/j.sse.2016.07.002

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs with 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks2016

    • Author(s)
      R. Zhang, X. Yu, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 63 Issue: 2 Pages: 558-564

    • DOI

      10.1109/ted.2015.2509961

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation2016

    • Author(s)
      R. Zhang, P. C. Huang, N. Taoka, M. Yokoyama, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 108 Issue: 5 Pages: 052903-052903

    • DOI

      10.1063/1.4941538

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Effect of III-V on insulator structure on quantum well intermixing2016

    • Author(s)
      S. Takashima, Y. Ikku, M. Takenaka, and S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 4S Pages: 04EH13-04EH13

    • DOI

      10.7567/jjap.55.04eh13

    • NAID

      210000146360

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] III-V/Ge MOS Device Technologies for Low Power Integrated Systems2016

    • Author(s)
      S. Takagi, M. Noguchi, M. Kim, S.-H. Kim, C.-Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke and M. Takenaka
    • Journal Title

      Solid-State Electronics

      Volume: 108

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits2016

    • Author(s)
      J. Kang, M. Takenaka, and S. Takagi
    • Journal Title

      Optics Express

      Volume: 24 Issue: 11 Pages: 11855-11864

    • DOI

      10.1364/oe.24.011855

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] Low resistivity lateral P-I-N junction formed by Ni-InGaAsP alloy for carrier injection InGaAsP photonic devices2016

    • Author(s)
      Jin-Kwon Park, Mitsuru Takenaka and Shinichi Takagi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 4S Pages: 04EH04-04EH04

    • DOI

      10.7567/jjap.55.04eh04

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15J08956, KAKENHI-PROJECT-26709022
  • [Journal Article] Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding2016

    • Author(s)
      J. Kang, X. Yu, M. Takenaka and S. Takagi
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 42 Pages: 259-263

    • DOI

      10.1016/j.mssp.2015.07.021

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] Low-dark-current waveguide InGaAs metal-semiconductor-metal photodetector monolithically integrated with InP grating coupler on III&#8211;V CMOS photonics platform2016

    • Author(s)
      Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 4S Pages: 04EH01-04EH01

    • DOI

      10.7567/jjap.55.04eh01

    • NAID

      210000146348

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance2015

    • Author(s)
      K. Tanaka, R. Zhang, M. Takenaka and S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54

    • NAID

      210000144949

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Tunneling FET Technologies Using III-V and Ge Materials2015

    • Author(s)
      S. Takagi, M. Kim, M. Noguchi, K. Nishi, and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 69 (10) Issue: 10 Pages: 99-108

    • DOI

      10.1149/06910.0099ecst

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Properties of ultrathin-body condensation Ge-On-Insulator films thinned by additional thermal oxidation2015

    • Author(s)
      W.-K. Kim, M. Takenaka and S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 4S Pages: 04DA05-04DA05

    • DOI

      10.7567/jjap.54.04da05

    • NAID

      210000144952

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] III-V/Ge Channel MOS Device Technologies in Nano CMOS era2015

    • Author(s)
      S. Takagi, R. Zhang, J. Suh, S.-H. Kim, M. Yokoyama, K. Nishi and M. Takenaka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 6S1 Pages: 06FA01-06FA01

    • DOI

      10.7567/jjap.54.06fa01

    • NAID

      210000145217

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] MOS Interface Control Technologies for Advanced III-V/ Ge Devices2015

    • Author(s)
      S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 69(5) Issue: 5 Pages: 37-51

    • DOI

      10.1149/06905.0037ecst

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Ultrathin body Germanium-on-insulator (GeOI) Pseudo-MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates2015

    • Author(s)
      X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Journal Title

      ECS Solid State Letters

      Volume: 4 Issue: 2 Pages: P15-P18

    • DOI

      10.1149/2.0031502ssl

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] “Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs2015

    • Author(s)
      X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
    • Journal Title

      Microelectronic Engineering

      Volume: 147 Pages: 196-200

    • DOI

      10.1016/j.mee.2015.04.063

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Surface leakage reduction in MSM InGaAs photodetector on III-V CMOS photonics platform2015

    • Author(s)
      Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi,
    • Journal Title

      IEEE Photonics Technology Letters

      Volume: 27 Issue: 14 Pages: 120-125

    • DOI

      10.1109/lpt.2015.2432052

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
    • Journal Title

      Microelectron. Eng.

      Volume: 147 Pages: 244-248

    • DOI

      10.1016/j.mee.2015.04.079

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Suppression of dark current in GeOx-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation2015

    • Author(s)
      J. Kang, R. Zhang, M. Takenaka, and S. Takagi
    • Journal Title

      Optics Express Letters

      Volume: 23 Issue: 13 Pages: 16967-16976

    • DOI

      10.1364/oe.23.016967

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Journal Article] Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs2015

    • Author(s)
      J.-K. Suh, N. Taoka, M. Takenaka and S. Takagi
    • Journal Title

      Solid-State Electronics

      Volume: 117 Pages: 77-87

    • DOI

      10.1016/j.sse.2015.11.014

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
    • Journal Title

      Microelectronic Engineering

      Volume: 147

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors2014

    • Author(s)
      S.H. Kim., Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y.-C. Kao, M. Takenaka, and S. Takagi
    • Journal Title

      Appl. Phys. Lett

      Volume: 105 Issue: 4 Pages: 043504-043504

    • DOI

      10.1063/1.4891493

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs with 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation2014

    • Author(s)
      R. Zhang, X. Yu, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 61 Issue: 11 Pages: 3668-3675

    • DOI

      10.1109/ted.2014.2359678

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Material Challenges and Opportunities in Ge/III-V channel MOSFETs2014

    • Author(s)
      S. Takagi, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang and M. Takenaka
    • Journal Title

      ECS Transaction

      Volume: 64 Issue: 11 Pages: 99-110

    • DOI

      10.1149/06411.0099ecst

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Sb-Doped S/D Ultrathin body Ge-On-insulator nMOSFET fabricated by improved Ge condensation process2014

    • Author(s)
      W.-K. Kim, K. Kuroda, T. Osada, M. Hata, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 61 Issue: 10 Pages: 3379-3385

    • DOI

      10.1109/ted.2014.2350457

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] Impact of plasma postoxidation temperature on the electrical properties of Al_2O_3/GeO_X/Ge pMOSFETs and nMOSFETs2014

    • Author(s)
      R. Zhang, J-C. Lin, X. Yu, M. Takenaka, S. Takagi
    • Journal Title

      IEEE Transaction on Electron Devices

      Volume: 61 Issue: 2 Pages: 416-422

    • DOI

      10.1109/ted.2013.2295822

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J09309, KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
  • [Journal Article] Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs with GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation2014

    • Author(s)
      R. Zhang, X. Yu, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 61 Issue: 7 Pages: 2316-2323

    • DOI

      10.1109/ted.2014.2325604

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Journal Article] InGaAs MSM photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform2014

    • Author(s)
      Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi
    • Journal Title

      IEICE Electron. Express

      Volume: 11 Issue: 16 Pages: 20140609-20140609

    • DOI

      10.1587/elex.11.20140609

    • NAID

      130004678211

    • ISSN
      1349-2543
    • Language
      English
    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Journal Article] III-V CMOS フォトニクスを用いた光電子融合集積回路プラットフォーム技術2014

    • Author(s)
      竹中充, 一宮佑希, 程勇鵬, 金相賢, 高木 信一
    • Journal Title

      電子情報通信学会和文論文誌C

      Volume: vol.J97-C, No.3 Pages: 95-103

    • Data Source
      KAKENHI-PROJECT-22686034
  • [Journal Article] III-V CMOSフォトニクスを用いた光電子融合集積回路プラットフォーム技術2014

    • Author(s)
      竹中充,一宮佑希,程勇鵬,金相賢,高木 信一
    • Journal Title

      電子情報通信学会和文論文誌C

      Volume: J97-C Pages: 95-103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Journal Article] Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation2014

    • Author(s)
      S. H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
    • Journal Title

      Applied Physics Letters

      Volume: 104 Issue: 11 Pages: 113509-113509

    • DOI

      10.1063/1.4869221

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J07612, KAKENHI-PROJECT-22686034
  • [Journal Article] III-V/Ge MOS Transistor Technologies for Future ULSI (invited)2013

    • Author(s)
      S. Takagi and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 54 (1) Pages: 39-54

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxG_a_<1-x> As metal-oxide-semiconductor field effect transistors2013

    • Author(s)
      N. Taoka, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
    • Journal Title

      IEEE Transactions on device and materials reliability

      Volume: 13 Issue: 4 Pages: 456-462

    • DOI

      10.1109/tdmr.2013.2289330

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J07612, KAKENHI-PROJECT-22686034
  • [Journal Article] Performance Enhancement Technologies in III-V/Ge MOSFETs (invited)2013

    • Author(s)
      S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 58(9) Pages: 137-148

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors2013

    • Author(s)
      N. Taoka, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
    • Journal Title

      Applied Physics Letters

      Volume: 103 Issue: 14 Pages: 143509-143509

    • DOI

      10.1063/1.4824474

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J07612, KAKENHI-PROJECT-22686034
  • [Journal Article] III-V/Ge CMOS device technologies for high performance logic applications (invited)2013

    • Author(s)
      S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 53 (3) Pages: 85-96

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] High Mobility Ge p- and n-MOSFETs with 0.7 nm EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation2013

    • Author(s)
      R. Zhang, P.-C. Huang, J.-C. Lin, N. Taoka, M. Takenaka, and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 60 Pages: 927-934

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Journal Article] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties2013

    • Author(s)
      S.Takagi, R.Zhang, and M.Takenaka
    • Journal Title

      Micoroelectron. Eng.

      Volume: 109 Pages: 389-395

    • DOI

      10.1016/j.mee.2013.04.034

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] III-V/Ge CMOS device technologies for high performance logic applications2013

    • Author(s)
      S.Takagi, M.Yokoyama, S.-H.Kim, R.Suzuki, R.Zhang, N.Taoka and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 53(3) Issue: 3 Pages: 85-96

    • DOI

      10.1149/05303.0085ecst

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] Invited : III-V/Ge MOS transistor technologies for future ULSI future IC technology and novel devices2013

    • Author(s)
      S. Takagi and M. Takenaka
    • Journal Title

      ECS Trans.

      Volume: VOL. 54 Issue: 1 Pages: 39-54

    • DOI

      10.1149/05401.0039ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-22686034, KAKENHI-PROJECT-23246058
  • [Journal Article] High Mobility Ge p- and n-MOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2013

    • Author(s)
      R.Zhang, P.-C.Huang, J.-C.Lin, N.Taoka, M.Takenaka and S.Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: vol.60, no.3 Issue: 2 Pages: 927-934

    • DOI

      10.1109/ted.2011.2176495

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] ductor-compatible IIInGaAsP grating couplers fabricated using complementary-metal-oxide-semiconI-V-on-insulator on Si2013

    • Author(s)
      Mitsuru Takenaka, Masafumi Yokoyama, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi
    • Journal Title

      Applied Physics Express

      Volume: vol. 6 Issue: 4 Pages: 42501-42501

    • DOI

      10.7567/apex.6.042501

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20226008, KAKENHI-PROJECT-22686034
  • [Journal Article] Limiting factors of channel mobility in III-V/Ge MOSFETs2013

    • Author(s)
      S.Takagi, M.S.-H.Kim, R.Zhang, N.Taoka, Yokoyama and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 53(3) Issue: 3 Pages: 97-105

    • DOI

      10.1149/05303.0003ecst

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform2013

    • Author(s)
      S. Takagi, S. -H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata and M. Takenaka
    • Journal Title

      Solid Stale Electronics

      Volume: 88 Pages: 2-8

    • DOI

      10.1016/j.sse.2013.04.020

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J07612, KAKENHI-PROJECT-23246058
  • [Journal Article] Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces2013

    • Author(s)
      R. Zhang, J. C. Lin, X. Yu, M. Takenaka, S. Takagi
    • Journal Title

      Microelectron. Eng.

      Volume: 109 Pages: 97-100

    • DOI

      10.1016/j.mee.2013.03.034

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J09309, KAKENHI-PROJECT-23246058
  • [Journal Article] Biaxially strained Extremely-thin Body I_<n0.53>G_<a0.47>As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility2013

    • Author(s)
      S. -H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
    • Journal Title

      Journal of Applied Physics

      Volume: 114 Issue: 16 Pages: 164512-164512

    • DOI

      10.1063/1.4828481

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J07612, KAKENHI-PROJECT-22686034
  • [Journal Article] Limiting factors of channel mobility in III-V/Ge MOSFETs2013

    • Author(s)
      S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 53 (3) Pages: 97-105

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures2013

    • Author(s)
      R. Zhang, P.-C. Huang, J.-C. Lin, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102 Issue: 8 Pages: 81603-81603

    • DOI

      10.1063/1.4794013

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
  • [Journal Article] Invited : Performance enhancement technologies in III-V/Ge MOSFETs Ge-based and III-V technologies2013

    • Author(s)
      S. Takagi, Rui Zhang, S. -H. Kim, M. Yokoyama, and M. Takenaka
    • Journal Title

      ECS Trans.

      Volume: VOL. 59 Issue: 9 Pages: 137-148

    • DOI

      10.1149/05809.0137ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-22686034, KAKENHI-PROJECT-23246058
  • [Journal Article] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks2012

    • Author(s)
      S.Takagi, R.Zhang, R.Suzuki N.Taoka, M.Yokoyama and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 50(4) Issue: 4 Pages: 107-122

    • DOI

      10.1149/05004.0107ecst

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] High-mobility Ge pMOSFET with 1-nm EOT Al2O3/GeOx/Ge gate stack fabricated by plasma post oxidation2012

    • Author(s)
      R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 59 Pages: 335-341

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Journal Article] Electron mobility enhancement of extremely thin body In_<0.7>Ga_<0.3>As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrates by metal-oxide-semiconductor interface buffer layers2012

    • Author(s)
      S. H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
    • Journal Title

      Appl. Phys. Express

      Volume: Vol.5 Issue: 1 Pages: 14201-14201

    • DOI

      10.1143/apex.5.014201

    • NAID

      10030154895

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Journal Article] Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform2012

    • Author(s)
      Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka, and S. Takagi
    • Journal Title

      Optics Express Letters

      Volume: vol.20, no.26 Issue: 26 Pages: B357-B357

    • DOI

      10.1364/oe.20.00b357

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Journal Article] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012

    • Author(s)
      R.Zhang, P.-C.Huang, M.Takenaka and S.Takagi
    • Journal Title

      ECS Trans.

      Volume: 50(9) Issue: 9 Pages: 699-706

    • DOI

      10.1149/05009.0699ecst

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] Impact of GeOx interfacial layer thickness on Al2O3/Ge MOS interface properties2011

    • Author(s)
      R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi
    • Journal Title

      Microelecton. Engineering

      Volume: 88 Issue: 7 Pages: 1533-1536

    • DOI

      10.1016/j.mee.2011.03.130

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
  • [Journal Article] Suppression of ALD-induced degradation of Ge MOS interface properties by low power plasma nitridation of GeO22011

    • Author(s)
      R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi
    • Journal Title

      J. Electrochem. Soc.

      Volume: 158 Issue: 8 Pages: G178-G178

    • DOI

      10.1149/1.3599065

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
  • [Journal Article] High performance extremely thin body InGaAs-on-insulator metal-oxide semiconductor field-effect transistors on Si substrates with Ni-InGaAs metal source/drain2011

    • Author(s)
      S. H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
    • Journal Title

      Appl. Phys. Express

      Volume: Vol.4 Issue: 11 Pages: 114201-114201

    • DOI

      10.1143/apex.4.114201

    • NAID

      10030153611

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Journal Article] Suppression of Interface State Generation in Si MOSFETs with Biaxially-Tensile Strain2011

    • Author(s)
      Y.Zhao, M.Takenaka, S.Takagi
    • Journal Title

      in Electron Device Letters 32(accepted)

    • Data Source
      KAKENHI-PROJECT-20246055
  • [Journal Article] Prospective and critical issues of III-V/Ge CMOS on Si platform2011

    • Author(s)
      S.Takagi and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 35(3) Issue: 3 Pages: 279-298

    • DOI

      10.1149/1.3569921

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] High Mobility Ge-based CMOS Device Technologies2011

    • Author(s)
      S.Takagi, S.Dissanayake and M.Takenaka
    • Journal Title

      Key Engineering Materials

      Volume: Vol.470 Pages: 1-7

    • DOI

      10.4028/www.scientific.net/kem.470.1

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] Device and integration technologies of III-V/Ge channel CMOS2011

    • Author(s)
      S.Takagi, M.Yokoyama, Y.-H.Kim and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 41(7) Issue: 7 Pages: 203-218

    • DOI

      10.1149/1.3633300

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] Al_2O_3/GeO_x/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Journal Title

      Appl.Phys.Lett.

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Journal Article] Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates2011

    • Author(s)
      J. Suh, R. Nakane, N. Taoka, M. Takenaka, and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 99 Issue: 14 Pages: 142108-142108

    • DOI

      10.1063/1.3647631

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
  • [Journal Article] Al2O3/GeOx/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: vol.98 Issue: 11 Pages: 112902-112902

    • DOI

      10.1063/1.3564902

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] MOS interface control technologies for III-V/Ge channel MOSFETs2011

    • Author(s)
      S.Takagi, R.Zhang, T.Hoshii and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 41(3) Issue: 3 Pages: 3-20

    • DOI

      10.1149/1.3633015

    • Data Source
      KAKENHI-PROJECT-23246058
  • [Journal Article] Novel Characterization Scheme of Si/SiO_2 Interface Roughness for Surface Roughness Scattering-limited Mobilities of Electrons and Holes in Unstrained-and Strained-Si MOSFETs2010

    • Author(s)
      Y.Zhao, H.Matsumoto, T.Sato, S.Koyama, M.Takenaka, S.Takani
    • Journal Title

      IEEE Trans.Electron Devices

      Volume: 57 Pages: 2057-2066

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Journal Article] A Novel Characterization Scheme of Si/SiO2 Interface Roughness for Surface Roughness Scattering-limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs2010

    • Author(s)
      Y.Zhao, H.Matsumoto T.Sato, S.Koyama, M.Takenaka, S.Takagi
    • Journal Title

      IEEE Trans.Electron Devices 57

      Pages: 2057-2066

    • Data Source
      KAKENHI-PROJECT-20246055
  • [Journal Article] High Performance Ultrathin(110)-Oriented Ge-On-Insulator pMOSFETs Fabricated by Ge Condensation Technique2010

    • Author(s)
      S.Dissanayake, S.Sugahara, M.Takenaka, S.Takagi
    • Journal Title

      Applied Physics Express 3

      Pages: 41302-41302

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal-Oxide-Semiconductor Field-Fffect Transistors2010

    • Author(s)
      O.Weber, M.Takenaka, S.Takagi
    • Journal Title

      Jpn.J.Appl.Rhys.

      Volume: 49 Pages: 74101-74101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Journal Article] Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal Oxide Semiconductor Field-Effect Transistors2010

    • Author(s)
      O.Weber, M.Takenaka, S.Takagi
    • Journal Title

      Jpn.J.Appl.Phys. 49

      Pages: 74101-74101

    • NAID

      40017216105

    • Data Source
      KAKENHI-PROJECT-20246055
  • [Journal Article] Ge/III-V Channel Engineering for future CMOS2009

    • Author(s)
      S.Takagi, M.Sugiyama, T.Yasuda, M.Takenaka
    • Journal Title

      ECS Transactions 19

      Pages: 9-20

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors2009

    • Author(s)
      K.Morii, S.Dissanayake, S.Tanabe, R.Nakane, M.Takenaka, S.Sugahara, S.Takagi
    • Journal Title

      Japanese Journal of Applied Physics 48

    • NAID

      210000066561

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Interfacial Control and Electrical Properties of Ge MOS structures2009

    • Author(s)
      S. Takagi, N. Taoka, M. Takenaka
    • Journal Title

      ECS Trans. vol.19,no.2

      Pages: 67-85

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Ge/III-V Channel Engineering for future CMOS2009

    • Author(s)
      S. Takagi, M. Sugiyama, T. Yasuda, M. Takenaka
    • Journal Title

      ECS Trans. vol.19,no.5

      Pages: 9-20

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Investigation of InAlAs oxide/InP metal-oxide-semiconductor structures formed by wet thermal oxidation2009

    • Author(s)
      S. Nakagawa, M. Yokoyama, O. Ichikawa, M. Hata, M. Tanaka, M. Takenaka. S. Takagi
    • Journal Title

      Japanese Journal of Applied Physics 48(掲載確定in press)

    • NAID

      210000066604

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19860024
  • [Journal Article] On Surface Roughness Scattering-limited Mobilities of Electrons and Holes in Biaxially-tensile Strained Si MOSFETs2009

    • Author(s)
      Y.Zhao, M.Takenaka, S.Takagi
    • Journal Title

      IEEE Electron Device Letters 30

      Pages: 987-989

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Journal Article] Investigation of InAlAs oxide/InP metal-oxide-semiconductor structures formed bywet thermal oxidation2009

    • Author(s)
      S. Nakagawa, M. Yokoyama, O. Ichikawa, M.Hata, M. Tanaka, M. Takenaka, S. Takagi
    • Journal Title

      Japanese Journal ofApplied Physics (JJAP) vol.48, No.2

    • Data Source
      KAKENHI-PROJECT-19860024
  • [Journal Article] Surface Orientation Dependence of Interface Properties of GeO2/Ge metal-oxide-semiconductor Structures Fabricated by Thermal Oxidation2009

    • Author(s)
      T.Sasada, Y.Nakakita, M.Takenaka, S.Takagi
    • Journal Title

      Journal of Applied Physics 106

      Pages: 73716-73716

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] On Surface Roughness Scatteringlimited Mobilities of Electrons and Holes in Biaxially-tensile Strained Si MOSFETs2009

    • Author(s)
      Y.Zhao, M.Takenaka, S.Takagi
    • Journal Title

      IEEE Electron Device Letters 30

      Pages: 987-989

    • Data Source
      KAKENHI-PROJECT-20246055
  • [Journal Article] Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-On-Insulator Metal-Oxide- Semiconductor Field-Effect Transistors2009

    • Author(s)
      K. Morii, S. Dissanayake, S. Tanabe, R. Nakane, M. Takenaka, S. Sugahara, S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys. vol.48,no.4

    • NAID

      210000066561

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Surface Orientation Dependence of Interface Properties of GeO2/Ge metal-oxide-semiconductor Structures Fabricated by Thermal Oxidation2009

    • Author(s)
      T. Sasada, Y. Nakakita, M. Takenaka, S. Takagi
    • Journal Title

      J. Appl. Phys. vol.106

      Pages: 73716-73716

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Interfacial Control and Electrical Properties of Ge MOS structures2009

    • Author(s)
      S.Takagi, N.Taoka, M.Takenaka
    • Journal Title

      ECS Transactions 19

      Pages: 67-85

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially-Strained Si MOSFETs2009

    • Author(s)
      Y.Zhao, M.Takenaka, S.Takagi
    • Journal Title

      IEEE Trans.Electron Devices 56

      Pages: 1152-1156

    • Data Source
      KAKENHI-PROJECT-20246055
  • [Journal Article] (110) Ultra-thin GOI Layers Fabricated by Ge Condensation Method2008

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
    • Journal Title

      Thin Solid Films Vol.517,Issue1

      Pages: 178-180

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance2008

    • Author(s)
      S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka and N. Sugiyama
    • Journal Title

      IEEE Trans. Electron Devices(Invited Paper) Vol. 55, No. 1

      Pages: 21-39

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] (110) Ultra-thin GOI Layers Fabricated by Ge Condensation Method2008

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka and S. Takagi
    • Journal Title

      Thin Solid Films Vol. 517, Issue 1

      Pages: 178-180

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Evidence of low interface trap density in GeO2/Ge Metal-Oxide-Semiconductor structures fabricated by thermal oxidation2008

    • Author(s)
      H. Matsubara, T. Sasada, M. Takenaka and S. Takaai
    • Journal Title

      Appl. Phys. Lett 93

      Pages: 32104-32104

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Evidence of low interface trap density in GeO2/Ge Metal-Oxide-Semiconductor structures fabricated by thermal oxidation2008

    • Author(s)
      H. Matsubara, T. Sasada, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett. Vol. 93, Issue. 3

      Pages: 32104-32104

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance (lnvited Paper)2008

    • Author(s)
      S. Takagi, T. lrisawa, T. Tezuka, T.Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka and N. Sugiyama
    • Journal Title

      IEEE Transaction on Electron Devices 55

      Pages: 21-39

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance2008

    • Author(s)
      S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka, N. Sugiyama
    • Journal Title

      IEEE Trans. Electron Devices Vol.55,No.1

      Pages: 21-39

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Evidence of low interface trap density in GeO2/Ge Metal-Oxide- Semiconductor structures fabricated by thermal oxidation2008

    • Author(s)
      H. Matsubara, T. Sasada, M. Takenaka, S. Takagi
    • Journal Title

      Appl. Phys. Lett. Vol.93,Issue.3

      Pages: 32104-32104

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] (110)Ultra-thin GOI Layers Fabricated by Ge Condensation Method2008

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka and S. Takagi
    • Journal Title

      Thin Solid Films 517

      Pages: 178-180

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Patent] MOS型光変調器及びその製造方法2016

    • Inventor(s)
      竹中充、韓在勲、高木信一
    • Industrial Property Rights Holder
      竹中充、韓在勲、高木信一
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2016-160229
    • Filing Date
      2016-08-17
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Patent] 半導体基板、半導体基板の製造方法および半導体装置2008

    • Inventor(s)
      竹中充、高木信一、秦雅彦、市川磨
    • Industrial Property Rights Holder
      国立大学法人東京大学、住友化学株式会社
    • Filing Date
      2008-03-26
    • Data Source
      KAKENHI-PROJECT-19860024
  • [Patent] 半導体基板, 半導体基板の製造方法および半導体装置2008

    • Inventor(s)
      竹中充, 高木信一, 秦雅彦, 市川磨
    • Industrial Property Rights Holder
      東京大学, 住友化学株式会社
    • Filing Date
      2008-03-26
    • Data Source
      KAKENHI-PROJECT-19860024
  • [Presentation] AI用シリコンプログラマブル光回路2024

    • Author(s)
      竹中充
    • Organizer
      電子情報通信学会総合大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] 低損失光位相シフタに向けたSb2S3の最適成膜条件の探索2024

    • Author(s)
      按田 智大, 宮武 悠人, 牧野 孝太郎, 富永 淳二, 宮田 典幸, 岡野 誠, トープラサートポン カシディット, 高木 信一, 竹中 充
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] 相変化材料Ge2Sb2Te3S2を用いたプログラマブル光回路2024

    • Author(s)
      竹中充, 宮武 悠人, 牧野 孝太郎, 富永 淳二, 宮田 典幸, 中野 隆志, 岡野 誠, トープラサートポン カシディット, 高木 信一
    • Organizer
      レーザー学会第44回年次大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Photonic tensor core with low-insertion-loss, non-volatile Ge2Sb2Te3S2 intensity modulators2023

    • Author(s)
      Y. Miyatake, R. Tang, K. Makino, J. Tominaga, N. Miyata, M. Okano, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      European Conference on Optical Communication (ECOC2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Photonic matrix multiplication with Ge2Sb2Te3S2 intensity modulators,2023

    • Author(s)
      Y. Miyatake, R. Tang, K. Makino, J. Tominaga, N. Miyata, M. Okano, K. Toprasertpong, S Takagi, and M. Takenaka
    • Organizer
      13th International Symposium on Photonics and Electronics Convergence (ISPEC2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Transparent in-line optical power monitor integrated with MOS optical phase shifter using InP/Si hybrid integration2023

    • Author(s)
      T. Akazawa, K. Sumita, S. Monfray, F. Boeuf, K. Toprasertpong, S. Takagi, M. Takenaka
    • Organizer
      European Conference on Optical Communication (ECOC2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Ge2Sb2Te3S2を用いた不揮発性相変化中赤外光位相シフタ2023

    • Author(s)
      宮武悠人, 牧野孝太郎, 富永淳二, 宮田典幸, 中野隆志, 岡野 誠, トープラサートポン カシディット, 高木信一, 竹中 充
    • Organizer
      電気学会ナノエレクトロニクス機能化・応用技術調査専門委員会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] InP/Siハイブリッド光パワーモニタとMOS型光位相シフタの一体集積2023

    • Author(s)
      赤澤 智熙, 隅田 圭, モンフレ ステファン, ブフ フレデリック, トープラサートポン カシディット, 高木 信一, 竹中 充
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Numerical evaluation of modulation bandwidth and insertion loss in InP-EO polymer hybrid optical modulator with doping optimization2023

    • Author(s)
      H. Sakumoto, T. Nakayama, Y. Miyatake, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] FeFET 駆動型不揮発性ハイブリッドMOS 位相シフタの Endurance・Retention 特性2023

    • Author(s)
      藤田 将大, 唐 睿, 湯 涵智, トープラサートポン カシディット, 高木 信一, 竹中 充
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] III-V CMOS photonics platform for universal photonics applications2023

    • Author(s)
      M. Takenaka, N. Sekine, K. Sumita, H. Sakumoto, S. Fu, K. Toprasertpong, and S. Takag
    • Organizer
      th International Conference on Optics, Photonics, and Lasers (OPL2023)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Optical power monitor for photonic integrated circuit using waveguide phototransistor2023

    • Author(s)
      T. Akazawa, K. Sumita, S. Monfray, F. Boeuf, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      Photonic Device Workshop 2023 (PDW2023)
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] 異種材料集積シリコン光回路を用いた深層学習アクセラレータ2023

    • Author(s)
      竹中充
    • Organizer
      微小光学研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Ge2Sb2Te3S2を用いた不揮発性相変化中赤外光位相シフタ2023

    • Author(s)
      宮武悠人, 牧野孝太郎, 富永淳二, 宮田典幸, 中野隆志, 岡野 誠, トープラサートポン カシディット, 高木信一, 竹中 充
    • Organizer
      電子情報通信学会シリコン材料・デバイス研究会(SDM)
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Memory characteristics of FeFET-driven hybrid MOS optical phase shifter2023

    • Author(s)
      M. Fujita, R. Tang, H. Tang, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      13th International Symposium on Photonics and Electronics Convergence (ISPEC2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Heterogeneous integration of III-V and phase change material for Si programmable photonic integrated circuits2023

    • Author(s)
      M. Takenaka
    • Organizer
      13th International Symposium on Photonics and Electronics Convergence (ISPEC2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] 低挿入損失・不揮発性Ge2Sb2Te3S2強度変調器を用いた光行列演算2023

    • Author(s)
      宮武 悠人, 唐 睿, 牧野 孝太郎, 富永 淳二, 宮田 典幸, 岡野 誠, トープラサートポン カシディット, 高木 信一, 竹中 充
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Low-power add-drop microring resonator switch with positive/negative phase tuning using InGaAsP/Si hybrid MOS phase shifter2023

    • Author(s)
      Y. Wakita, R. Tang, H. Tang, S. Ohno, T. Akazawa, Y. Miyatake, S. Monfray, F. Boeuf, K. Toprasertpong, S Takagi, M. Takenaka
    • Organizer
      European Conference on Optical Communication (ECOC2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] Demonstration of add-drop ring resonator switch using InGaAsP/Si hybrid MOS phase shifter2023

    • Author(s)
      Y. Wakita, R. Tang, H. Tang, S. Ohno, T. Akazawa, S. Monfray, F. Boeuf, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      13th International Symposium on Photonics and Electronics Convergence (ISPEC2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00172
  • [Presentation] ウェハ接合を用いた光集積回路およびコンピューティング応用2022

    • Author(s)
      竹中 充
    • Organizer
      電子実装工学研究所(IMSI)第3回会員会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] CAM-ESに基づく小型低損失2×2カプラの設計2022

    • Author(s)
      宮武 悠人, トープラサートポン カシディット, 高木 信一, 竹中 充
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Record-low loss non-volatile mid-infrared PCM optical phase shifter based on Ge2Sb2Te3S22022

    • Author(s)
      Y. Miyatake, K. Makino, J. Tominaga, N. Miyata, T. Nakano, M. Okano, K. Toprasertpong, S. Takagi, M. Takenaka
    • Organizer
      International Electron Devices Meeting (IEDM2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Compact, low-loss, fabrication-tolerant, and thermally stable 2x2 Si optical coupler designed by CMA-ES2022

    • Author(s)
      Y. Miyatake, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Ge-on-insulator platform for mid-infrared photonic integrated circuits2022

    • Author(s)
      M. Takenaka, Z. Zhao, T. Piyapatarakul, Y. Miyatake, K. Toprasertpong, and S. Takagi
    • Organizer
      242th ECS Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] 極薄III-V族半導体を用いたSiハイブリッド光集積回路および光コンピューティング応用2022

    • Author(s)
      竹中充
    • Organizer
      学振R025産学協力委員会第11回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Optimization of Compact and Low-loss 2×2 Si Optical Coupler based on CMA-ES2022

    • Author(s)
      Y. Miyatake, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      12th International Symposium on Photonics and Electronics Convergence (ISPEC2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Numerical analysis of III-V MOS optical modulator with graphene transparent electrode for efficient phase modulation2022

    • Author(s)
      Tipat Piyapatarakul, Hanzhi Tang, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Design of the III-V MOS optical modulator with doped graphene electrode for efficient, high-speed phase modulation2022

    • Author(s)
      T. Piyapatarakul, H. Tang, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      12th International Symposium on Photonics and Electronics Convergence (ISPEC2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Analysis of III-V MOS optical modulator with transparent doped graphene gate electrode2022

    • Author(s)
      T. Piyapataraku, H. Tang, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] III-V/Si hybrid integration for scalable optical switching and computing2022

    • Author(s)
      M. Takenaka, H. Tang, K. Watanabe, T. Ochiai, T. Akazawa, Y. Miyatake, S. Ohno, K. Sumita, S. Monfray, F. Boeuf, R. Tang, K. Toprasertpong, and S. Takagi
    • Organizer
      International Conference on Photonics in Switching and Computing (PSC2022)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Ge ring modulator based on carrier-injection phaser shifter operating at two micrometer band2021

    • Author(s)
      Z. Zhao, C.-P. Ho, Q. Li, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      European Conference on Optical Communication (ECOC2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] 波長2.4μmで動作する相変化材料を用いた中赤外光位相シフタ2021

    • Author(s)
      宮武 悠人, 何 鐘培, 牧野 孝太郎, 富永 淳二, 宮田 典幸, 中野 隆志, 関根 尚希, トープラサートポン カシディット, 高木 信一, 竹中 充
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Materials drive Si photonics2021

    • Author(s)
      M. Takenaka, K. Toprasertpong, and S. Takagi
    • Organizer
      34th International Microprocesses and Nanotechnology Conference (MNC2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Germanium mid-infrared integrated photonics on GeOI platform2021

    • Author(s)
      M. Takenaka, Z. Zhao, C.-P. Ho, T. Fujigaki, K. Toprasertpong, and S. Takagi
    • Organizer
      Conference on Lasers and Electro-Optics (CLEO2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Reduction of optical loss of phase-change phase shifter based on Ge2Sb2Te5 operating at mid-infrared wavelength2021

    • Author(s)
      Y. Miyatake, C.-P. Ho, K. Makino, J. Tominaga, N. Miyata, T. Nakano, N. Sekine, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      11th International Symposium on Photonics and Electronics Convergence (ISPEC2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Enhancement of the Ge sub-bandgap photo-response at 2-μm band by photo-gating effect2021

    • Author(s)
      Z. Zhao, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Investigation of Optical Phase-shift by Free-carrier effect in Germanium Waveguides for Mid-infrared Photonics2020

    • Author(s)
      Z. Zhao, C. Ho, Q. Li, Z. Lin, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Experimental evaluation of the free-carrier plasma dispersion effect in germanium2020

    • Author(s)
      Z. Zhao, C.-P. Ho, Q. Li, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      10th International Symposium on Photonics and Electronics Convergence (ISPEC2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Mid-infrared non-volatile compact optical phase shifter based on Ge2Sb2Te52020

    • Author(s)
      Y. Miyatake, C.-P. Ho, P. Pitchappa, R. Singh, K. Makino, J. Tominaga, N. Miyata, T. Nakano, N. Sekine, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      European Conference on Optical Communication (ECOC 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Two-micrometer monolithic germanium waveguide photodetector integrated with lateral PIN junction2020

    • Author(s)
      Z. Zhao, C.-P. Ho, Q. Li, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      10th International Symposium on Photonics and Electronics Convergence (ISPEC2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] 相変化材料を用いた中赤外光位相シフタの提案2020

    • Author(s)
      宮武 悠人, 何 鐘培, 牧野 孝太郎, 富永 淳二, 宮田 典幸, 中野 隆志, 関根 尚希, トープラサートポン カシディット, 高木 信一, 竹中 充
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Non-volatile compact optical phase shifter based on Ge2Sb2Te5 operating at mid-infrared wavelength2020

    • Author(s)
      Y. Miyatake, C. P. Ho, P. Pitchappa, R. Singh, K. Makino, J. Tominaga, N. Miyata, T. Nakano, N. Sekine, K. Toprasertpong, S. Takagi, and M. Takenaka
    • Organizer
      10th International Symposium on Photonics and Electronics Convergence (ISPEC2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02198
  • [Presentation] Investigation of Franz-Keldysh effect and carrier depletion effect in III-V/Si hybrid MOS optical modulator2019

    • Author(s)
      Q. Li, C.-H. Ho, S. Takagi, and, M. Takenaka
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] Efficient Optical Modulator by Reverse-biased III-V/Si Hybrid MOS Capacitor based on FK Effect and Carrier Depletion2019

    • Author(s)
      Q. Li, C. P. Ho, S. Takagi, and M. Takenaka
    • Organizer
      Optical Fiber Communication Conference (OFC2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] フォトニクス応用に向けたIII-V on SiCプラットフォームの検討2018

    • Author(s)
      三條 嵩明, 関根 尚希, 高木 信一, 竹中 充
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] III-V/Si hybrid MOS optical phase modulator for Si photonic integrated circuits2018

    • Author(s)
      M. Takenaka, J. Han, F. Boeuf, J.-K. Park, Q. Li, C. P. Ho, D. Lyu, S. Ohno, J. Fujikata, S. Takahashi, and S. Takagi
    • Organizer
      European Conference on Optical Communication (ECOC 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] Fabrication of Si racetrack optical modulator with III-V/Si hybrid MOS phase shifter2018

    • Author(s)
      Q. Li, C.-P. Ho, S. Takagi, and M. Takenaka
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] Fabrication of High-Q Ring Resonator using n-type GeOI wafer2018

    • Author(s)
      Z. Zhao, C. Ho, S. Takagi, and M. Takenaka
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Investigation of a germanium-on-insulator band-stop filter2018

    • Author(s)
      C. P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka
    • Organizer
      8th International Symposium on Photonics and Electronics Convergence (ISPEC2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] Fabrication of high-Q ring resonator using low loss GeOI wafer2018

    • Author(s)
      Z. Zhao, C. P. Ho, S. Takagi, and M. Takenaka
    • Organizer
      8th International Symposium on Photonics and Electronics Convergence (ISPEC2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] Low-power Ge thermo-optic phase shifter on Ge-on-Insulator platform2018

    • Author(s)
      T. Fujigaki, S. Takagi, and M. Takenaka
    • Organizer
      European Conference on Optical Communication (ECOC 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Electronic-photonic integrated circuits based on heterogeneous integration of III-V, Ge, and 2D materials on Si2018

    • Author(s)
      M. Takenaka
    • Organizer
      Korean Institute of Science and Technology (KIST)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] 中赤外フォトニクスのためのGe/Si ハイブリッド MOS型光変調器の提案2018

    • Author(s)
      田口富隆, 高木信一, 竹中充
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Low-crosstalk, low-power Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter2018

    • Author(s)
      Q. Li, J.-H. Han, C. Ho, S. Takagi, and M. Takenaka
    • Organizer
      Optical Fiber Communication Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Low-crosstalk, low-power Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter2018

    • Author(s)
      Q. Li, J.-H. Han, C. Ho, S. Takagi, and M. Takenaka
    • Organizer
      Optical Fiber Communication Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] Demonstration of Mach-Zehnder interferometer optical switch with InGaAsP/Si hybrid MOS optical phase shifter2018

    • Author(s)
      Q. Li, S. Takagi, M. Takenaka
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Demonstration of Si racetrack resonator based on III-V/Si hybrid MOS phase shifter2018

    • Author(s)
      Q. Li, C. P. Ho, S. Takagi, and M. Takenaka
    • Organizer
      8th International Symposium on Photonics and Electronics Convergence (ISPEC2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] Efficient low-loss InGaAsP/Si hybrid MOS optical modulator2018

    • Author(s)
      韓 在勲, Boeuf Frederic, 藤方 潤一, 高橋 重樹, 高木 信一, 竹中 充
    • Organizer
      第65回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Ge-on-insulator platform for mid-infrared integrated photonics2018

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      IEEE Summer Topicals Meeting Series
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Si hybrid MOS optical phase shifter for switching and computing2018

    • Author(s)
      M. Takenaka, J. Han, Q. Li, C.P. Ho, D. Lyu, S. Ohno, and S. Takagi
    • Organizer
      Photonics in Switching and Computing (PSC 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] Proposal of Ge/Si hybrid MOS optical modulator operating at mid-infrared wavelengths2018

    • Author(s)
      Y. Taguchi, S. Takagi, and M. Takenaka
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Investigation of Low-loss Mid-infrared Waveguide Using n-type Ge2018

    • Author(s)
      Z. Zhao, C. Ho, S. Takagi, and M. Takenaka
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Fabrication of high-Q ring resonator using low loss GeOI wafer2018

    • Author(s)
      Z. Zhao, C. P. Ho, S. Takagi, and M. Takenaka
    • Organizer
      8th International Symposium on Photonics and Electronics Convergence (ISPEC2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] ゲルマニウムを用いた中赤外集積フォトニクスへの展開2018

    • Author(s)
      竹中充, 高木信一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] High-efficiency, low-loss optical phase modulator based on III-V/Si hybrid MOS capacitor2018

    • Author(s)
      M. Takenaka, J.-H. Han, J.-K. Park, F. Boeuf, J. Fujikata, S. Takahashi, and S. Takagi
    • Organizer
      Optical Fiber Communication Conference
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Investigation of a germanium-on-insulator band-stop filter2018

    • Author(s)
      C. P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka
    • Organizer
      8th International Symposium on Photonics and Electronics Convergence (ISPEC2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] 酸化物半導体/IV族半導体を用いた超低消費電力トンネルトランジスタ2018

    • Author(s)
      藤垣匠, 高木信一, 竹中充
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Design Optimization of Ultralow Capacitance InGaAs Waveguide Photodetector on III-V CMOS photonics platform2018

    • Author(s)
      P. Cheng, S. Takagi, M. Takenaka
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Heterogeneous integration of III-V/Ge on Si for photonic integrated circuits2018

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      Progress In Electromagnetics Research Symposium (PIERS2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Monolithic integration of InGaAsP MZI modulator and InGaAs driver MOSFET using III-V CMOS photonics2017

    • Author(s)
      J. Park, S. Takagi, and M. Takenaka
    • Organizer
      Optical Fiber Communication Conference
    • Place of Presentation
      Los Angeles Convention Center, Los Angeles, USA
    • Year and Date
      2017-03-20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] 異種半導体集積Siフォトニクスを用いた高効率光変調器への展開2017

    • Author(s)
      竹中 充, 高木 信一
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] III-V/Si hybrid MOS optical phase shifter toward low-crosstalk switching2017

    • Author(s)
      Q. Li, S. Takagi, and M. Takenaka
    • Organizer
      7th International Symposium on Photonics and Electronics Convergence
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Low-optical-loss graphene-based phase modulator operating at mid-infrared wavelength2017

    • Author(s)
      Y. Yamaguchi, S. Takagi, and M. Takenaka
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] III-V/Ge MOSFETs and TFETs for Ultra-Low Power Logic LSIs2017

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      2017 International Symposium on VLSI Technology, Systems and Applications (2017 VLSI-TSA)
    • Place of Presentation
      Ambassador Hotel Hsinchu, Hsinchu, Taiwan
    • Year and Date
      2017-04-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Near-infrared and mid-infrared integrated photonics based on Ge-on-insulator platform2017

    • Author(s)
      M. Takenaka, J. Kang, T. Fujigaki, and S. Takagi
    • Organizer
      IEEE Photonics Conference (IPC 2017)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Investigation of a bandpass filter on Germanium-on-Insulator photonic platform2017

    • Author(s)
      C. P. Ho, Z. Zhao, S. Takagi, and M. Takenaka
    • Organizer
      7th International Symposium on Photonics and Electronics Convergence (ISPEC2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] III-V-based low power CMOS devices on Si platform2017

    • Author(s)
      S. Takagi, D. H. Ahn, T. Gotow, M. Noguchi, K. Nishi, S.-H. Kim, M. Yokoyama, C.-Y. Chang, S.-H. Yoon, C. Yokoyama and M. Takenaka
    • Organizer
      IEEE International Conference on Integrated Circuit Design & Technology (ICICDT)
    • Place of Presentation
      Avaya Auditorium, Austin, USA
    • Year and Date
      2017-05-23
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] 酸化濃縮プロセスにおける冷却方法がGeOI中の圧縮ひずみに及ぼす効果2017

    • Author(s)
      金佑彊, 竹中充, 高木信一
    • Organizer
      第64回 応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Pure phase modulation based on graphene operating at wavelength of 3000 nm2017

    • Author(s)
      Y. Yamaguchi, S. Takagi, and M. Takenaka
    • Organizer
      24th Congress of the international Commission for Optics (ICO-24)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] 貼り合わせ法を用いた高性能InGaAsP/Si hybrid MOS型光変調器2017

    • Author(s)
      韓 在勲, 高木 信一, 竹中 充
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Year and Date
      2017-03-14
    • Invited
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] High-Efficiency O-Band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor2017

    • Author(s)
      J. Han, S. Takagi, and M. Takenaka
    • Organizer
      Optical Fiber Communication Conference
    • Place of Presentation
      Los Angeles Convention Center, Los Angeles, USA
    • Year and Date
      2017-03-20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Electronic-photonic integrated circuits based on heterogeneous integration of Ge/III-V on Si2017

    • Author(s)
      M. Takenaka
    • Organizer
      Silicon Photonic Workshop, European Conference on Optical Communication
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Influence of ALD High-k film deposition on plasma oxidation GeOx/Ge gate stacks2017

    • Author(s)
      M. Ke, M. Takenaka, and S. Takagi
    • Organizer
      10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, "Atomically Controlled Processing for Ultralarge Scale Integration
    • Place of Presentation
      東北大学(宮城県仙台市)
    • Year and Date
      2017-02-13
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Wavelength dependence of Ge thermo-optic switch operating at mid-infrared wavelength range2017

    • Author(s)
      T. Fujigaki, S. Takagi, and M. Takenaka
    • Organizer
      7th International Symposium on Photonics and Electronics Convergence (ISPEC2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] III-V/SiハイブリッドMOS構造を用いた高効率光位相変調およびユニバーサル光集積回路への展開2017

    • Author(s)
      竹中 充
    • Organizer
      第27回シリコンフォトニクス研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] プラズマ酸化により形成したAl2O3/GeOx/Ge MOS界面の遅い準位の起源2017

    • Author(s)
      柯夢南, シャオ・ユウ, 張志宇, 竹中充, 高木信一
    • Organizer
      第22回電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―
    • Place of Presentation
      東レ研修センター(静岡県三島市)
    • Year and Date
      2017-01-20
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] MOS Interface Defect Control in Ge/IIIV Gate Stacks2017

    • Author(s)
      S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, and M. Takenaka
    • Organizer
      232nd Electrochemical Society (ECS) Meeting, D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar
    • Place of Presentation
      Gaylord National Resort and Convention Center, National Harbor, USA
    • Year and Date
      2017-10-01
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers2017

    • Author(s)
      M. Ke, M. Takenaka, and S. Takagi
    • Organizer
      20th Conference on Insulating Films on Semiconductors (INFOS 2017)
    • Place of Presentation
      Seminaris SeeHotel Potsdam, Potsdam, Germany
    • Year and Date
      2017-06-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] High-efficiency phase modulation based on Si hybrid MOS structure2017

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      Progress In Electromagnetics Research Symposium
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Structure optimization of InGaAsP/Si hybrid MOS optical modulator for high-efficiency phase modulation2017

    • Author(s)
      Q. Li, J.-H. Han, F. Boeuf, S. Takagi, and M. Takenaka
    • Organizer
      24th Congress of the international Commission for Optics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Ultra-low Power MOSFETs and Tunneling FETs using III-V and Ge2017

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      International Workshop on Nanodevice Technologies 2017 (IWNT 2017)
    • Place of Presentation
      広島大学(広島県東広島市)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Investigation on Mg ion implantation for carrier-depletion InGaAsP optical modulator with vertical PN junction2017

    • Author(s)
      N. Sekine, J.-H. Han, S. Takagi, and M. Takenaka
    • Organizer
      24th Congress of the international Commission for Optics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] High Performance 4.5-nm-Thick Compressively-Strained Ge-on-Insulator pMOSFETs Fabricated by Ge Condensation with Optimized Temperature Control2017

    • Author(s)
      W.-K. Kim, M. Takenaka and S. Takagi
    • Organizer
      Symposium on VLSI technology
    • Place of Presentation
      京都リーガローヤルホテル(京都府京都市)
    • Year and Date
      2017-06-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Investigation of a bandpass filter on Germanium-on-Insulator photonic platform2017

    • Author(s)
      C.-P. Ho, Z. Zhao, S. Takagi, and M. Takenaka
    • Organizer
      7th International Symposium on Photonics and Electronics Convergence
    • Data Source
      KAKENHI-PROJECT-17F17071
  • [Presentation] 低損失グラフェン中赤外光変調器の検討2017

    • Author(s)
      山口夕貴, 高木信一, 竹中充
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Si photonics based on heterogeneous integration2017

    • Author(s)
      M. Takenaka
    • Organizer
      Tsinghua University-the University of Tokyo Joint Symposium
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] プラズマ後酸化によるALD Al2O3/Y2O3/GeOx/Geゲートスタックの電気特性2017

    • Author(s)
      柯夢南, 竹中充, 高木信一
    • Organizer
      第64回 応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Performance benchmarking of InGaAsP, Si0.8Ge0.2 and Si-based photonics homojunction and heterojunction PN modulators2017

    • Author(s)
      F. Boeuf, N. Sekine, S. Takagi, and M. Takenaka
    • Organizer
      International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] 異種材料集積を用いたSiフォトニクス2017

    • Author(s)
      竹中充
    • Organizer
      第9回フォトニクス・イノベーションセミナー(シリコンフォトニクスの進展と展望)
    • Invited
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Low-crosstalk optical switch with InGaAsP/Si hybrid MOS optical phase shifter2017

    • Author(s)
      Q. Li, S. Takagi, and M. Takenaka
    • Organizer
      International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] III-V CMOSフォトニクス・プラットフォーム上L字接合をもつキャリア空乏型InGaAsP光変調器の検討2017

    • Author(s)
      関根 尚希, 高木 信一, 竹中 充
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Numerical investigation of ultralow-capacitance InGaAs photodetector on III-V/a-Si hybrid platform2017

    • Author(s)
      P. Cheng, S. Takagi, and M. Takenaka
    • Organizer
      7th International Symposium on Photonics and Electronics Convergence
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Optimization of modulation efficiency of InGaAsP/Si hybrid MOS optical modulator2017

    • Author(s)
      Q. Li, S. Takagi, and M. Takenaka
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] 温度サイクルを減らした酸化濃縮法による高圧縮ひずみ極薄膜Ge-OI 構造の実現2016

    • Author(s)
      金佑彊, 竹中充, 高木信一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si2016

    • Author(s)
      M. Takenaka, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J. Park, and S. Takagi
    • Organizer
      SPIE Photonics Europe
    • Place of Presentation
      SQUARE Brussels Meeting Center, Brussels, Belgium
    • Year and Date
      2016-04-04
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] 極低電力LSIのための先端Ge MOSデバイス技術2016

    • Author(s)
      高木信一, シャオ・ユウ, 張睿, 柯夢南, 竹中充
    • Organizer
      第80回半導体・集積路技術シンポジウム
    • Place of Presentation
      東京理科大学森戸記念館(東京都新宿区)
    • Invited
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Challenges and opportunities of near and mid-infrared photonics based on SiGe and Ge2016

    • Author(s)
      M. Takenaka, Y. Kim, J. Han, J. Kang, and S. Takagi
    • Organizer
      230th ECS Meeting
    • Place of Presentation
      Hawaii, USA
    • Year and Date
      2016-10-04
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Control of slow traps of ALD Al2O3/Ge-based gate stacks with post plasma process2016

    • Author(s)
      M. Ke, X. Yu, M. Takenaka and S. Takagi
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, "Atomically Controlled Processing for Ultralarge Scale Integration”
    • Place of Presentation
      東北大学(宮城県仙台市)
    • Year and Date
      2016-01-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Heterogeneous integration of SiGe/Ge and III-V on Si for CMOS photonics2016

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Avanti Kyoto Hall, Ryukoku Univeristy, Kyoto
    • Year and Date
      2016-06-23
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Numerical analysis of InGaAsP carrier-depletion optical modulator on III-V CMOS photonics platform2016

    • Author(s)
      N. Sekine, J. Han, M. Takenaka, and S. Takagi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba, Ibaragi
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Al2O3/GeOx/Ge MOS界面の遅い準位密度に与える界面構造の影響2016

    • Author(s)
      柯夢南, ユウ・シャオ, 竹中充, 高木信一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Heterogeneous integration of SiGe/Ge and III-V on Si for CMOS photonics2016

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      International Meeting for Future of Electron Devices
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2016-06-23
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Heterogeneous integration of SiGe/Ge and III-Vs on Si for electronic-photonic integrated circuit2016

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      JSPS-OSA joing session
    • Place of Presentation
      Toki Messe, Niigata, Niigata
    • Year and Date
      2016-09-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Estimation of modulation efficiency enhancement using an InGaAsP/Si hybrid MOS optical modulator2016

    • Author(s)
      J.-H. Han, S. Takagi, and M. Takenaka
    • Organizer
      6th International Symposium on Photonics and Electronics Convergence
    • Place of Presentation
      Eneos Hall, The University of Tokyo, Meguro-ku, Komaba, Tokyo
    • Year and Date
      2016-11-28
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Design and characterization of Ge passive waveguide components on Ge-on-Insulator for mid-infrared photonics2016

    • Author(s)
      J. Kang, X. Yu, M. Takenaka, and S. Takagi
    • Organizer
      Optical Fiber Communication Conference (OFC2016)
    • Place of Presentation
      Tu3E.4, Anahaim
    • Year and Date
      2016-03-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] 極薄膜Ge-On-Insulator(GOI) p-MOSFETのキャリア輸送特性2016

    • Author(s)
      ユウ・シャオ, 亢健, 竹中充, 高木信―
    • Organizer
      電子情報通信学会SDM研究会・応用物理学会シリコンテクノロジー分科会共催研究集会「先端CMOSデバイス・プロセス技術(IEDM特集)」
    • Place of Presentation
      機械振興会館(東京都港区)
    • Year and Date
      2016-01-28
    • Invited
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Extremely high modulation efficiency III-V/Si hybrid MOS optical modulator fabricated by direct wafer bonding2016

    • Author(s)
      J. Han, M. Takenaka, and S. Takagi
    • Organizer
      International Electron Devices Meeting
    • Place of Presentation
      Hilton San Francisco Union Square, San Francisco, USA
    • Year and Date
      2016-12-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Ge-on-insulator platform for near and mid-infrared integrated photonics2016

    • Author(s)
      M. Takenaka
    • Organizer
      6th International Symposium on Photonics and Electronics Convergence (ISPEC2016)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2016-11-28
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si2016

    • Author(s)
      M. Takenaka, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J. Park, and S. Takagi
    • Organizer
      SPIE Photonics Europe
    • Place of Presentation
      Brussels, Belgium
    • Year and Date
      2016-04-04
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Si/III-V CMOS photonics for low-power electronic-photonic integrated circuits on Si platform2016

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      Conference on Lasers and Electro-Optics (CLEO2016)
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2016-06-10
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] CMOS photonics based on SiGe and Ge for near and mid-infrared photonic integrated circuits2016

    • Author(s)
      M. Takenaka, Y. Kim, J. Han, J. Kang, and S. Takagi
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2016)
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2016-09-28
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Design and characterization of Ge passive waveguide components at 2-μm band for mid-infrared integrated photonics2016

    • Author(s)
      J. Kang, M. Takenaka, and S. Takagi
    • Organizer
      6th International Symposium on Photonics and Electronics Convergence (ISPEC2016)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2016-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Carrier Transport Properties in Extremely-Thin Body GOI p-MOSFETs2016

    • Author(s)
      S. Takagi, X. Yu, J. Kang and M. Takenaka
    • Organizer
      Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
    • Place of Presentation
      Forschungszentrum Julich, Julich, Germany
    • Year and Date
      2016-11-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] 貼り合わせInGaAsP/Si ハイブリッド MOS 型光変調器に関する検討2016

    • Author(s)
      韓 在勲, 竹中 充, 高木 信一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Feasibility study of III-V/Si hybrid MOS optical modulators consisting of n-InGaAsP/Al2O3/p-Si MOS capacitor formed by wafer bonding2016

    • Author(s)
      J. Han, M. Takenaka, and S. Takagi
    • Organizer
      International Conference on Group IV Photonics
    • Place of Presentation
      Grand Kempinski Hotel, Shanghai, China
    • Year and Date
      2016-08-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Heterogeneous integration of SiGe/Ge and III-Vs on Si for electronic-photonic integrated circtuis2016

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      JSPS-OSA joing session
    • Place of Presentation
      Niigata, Japan
    • Year and Date
      2016-10-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Si上異種半導体集積によるCMOSフォトニクス2016

    • Author(s)
      竹中 充, 金 栄現, 韓 在勲, 亢 健, 一宮佑希, 程 勇鵬, 朴 珍權, 金 相賢, 高木信一
    • Organizer
      電子情報通信学会SDM研究会・応用物理学会シリコンテクノロジー分科会共催研究集会
    • Place of Presentation
      機会振興会館(東京都港区)
    • Year and Date
      2016-01-28
    • Invited
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] III-V CMOSフォトニクス・プラットフォーム上キャリア注入型InGaAsP可変光減衰器2016

    • Author(s)
      朴 珍權, 韓 在勲, 竹中 充, 高木 信一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Si上異種半導体集積による光電子集積回路技術2016

    • Author(s)
      竹中 充, 高木 信一
    • Organizer
      プラナリゼーションCMPとその応用技術専門委員会第150回研究会
    • Place of Presentation
      名古屋大学ES総合館ESホール(名古屋市千種区)
    • Year and Date
      2016-06-20
    • Invited
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Investigation of Ge thermo-optic switch on the Ge CMOS Photonics platform2016

    • Author(s)
      T. Fujigaki, J. Kang, S. Takagi, and M. Takenaka
    • Organizer
      6th International Symposium on Photonics and Electronics Convergence (ISPEC2016)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2016-11-29
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Si/III-V CMOS photonics for low-power electronic-photonic integrated circuits on Si platform2016

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      Conference on Lasers and Electro-Optics
    • Place of Presentation
      San Jose Convention Center, San Jose, USA
    • Year and Date
      2016-06-05
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Ge waveguide photodetector on wafer-bonded Ge-on-insulator substrate monolithically integrated with amorphous Si waveguide2016

    • Author(s)
      J. Kang, M. Takenaka, and S. Takagi
    • Organizer
      European Conference on Optical Communication (ECOC 2016)
    • Place of Presentation
      D&uuml;sseldorf, Germany
    • Year and Date
      2016-09-21
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] GeOxNy 層の挿入によるAl2O3/n-Ge MOS界面の遅い準位密度低減2016

    • Author(s)
      柯夢南, シャオ・ユウ, 竹中充, 高木信一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka, and S. Takagi
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2 nm2015

    • Author(s)
      X. Yu, J. Kang, M. Takenaka and S. Takagi
    • Organizer
      International Electron Device Meeting (IEDM)
    • Place of Presentation
      Hilton Washington, Washington DC., USA
    • Year and Date
      2015-12-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] MOS Interface Control Technologies for Advanced III-V/ Ge Devices2015

    • Author(s)
      S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka
    • Organizer
      228th Fall meeting of the Electrochemical Society, D04 - Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
    • Place of Presentation
      Hyatt Regency Hotel, Pheonix, Arizona, USA
    • Year and Date
      2015-10-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Low Power MOS Device Technologies based on Heterogeneous Integration2015

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      2015 International Electron Devices and Materials Symposia (IEDMS)
    • Place of Presentation
      Kun Shan University, Tainan, Taiwan
    • Year and Date
      2015-11-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Tunneling FET Technologies Using III-V and Ge Materials2015

    • Author(s)
      S. Takagi, M. Kim, M. Noguchi, K. Nishi, and M. Takenaka
    • Organizer
      228th Fall meeting of the Electrochemical Society, G04 - ULSI Process Integration 9
    • Place of Presentation
      Hyatt Regency Hotel, Pheonix, Arizona, USA
    • Year and Date
      2015-10-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
    • Organizer
      19th Conference on "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      University of Udine, Udine, Italy
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] First demonstration of Ge waveguide platform on Ge-on-Insulator for mid-infrared integrated photonics2015

    • Author(s)
      J. Kang, M. Takenaka, and S. Takagi
    • Organizer
      European Conference on Optical Communication (ECOC 2015)
    • Place of Presentation
      Barcelona, P.2.10
    • Year and Date
      2015-09-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Impact of Thermal Annealing on Ge-on-Insulator Substrate Fabricated by Wafer Bonding2015

    • Author(s)
      J. Kan, X. Yu, M. Takenaka, and S. Takagi
    • Organizer
      E-MRS Spring Meeting
    • Place of Presentation
      Symposium Z.5, Lille, France
    • Year and Date
      2015-05-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] III-V CMOS photonics on Si for high-performance electronic-photonic integrated circuits2015

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      8th International Conference on Materials for Advanced Technologies
    • Place of Presentation
      Suntech, Singapore
    • Year and Date
      2015-07-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs2015

    • Author(s)
      X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
    • Organizer
      19th Conference on "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      University of Udine, Udine, Italy
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Impact of GeOx passivation on dark current for wafer-bonded Ge-on-Insulator metal-semiconductor-metal photodetector2015

    • Author(s)
      J. Kang, M. Takenaka and S. Takagi
    • Organizer
      International Conference on Group IV Photonics (GFP2015)
    • Place of Presentation
      WP18, Vancouver, Canada
    • Year and Date
      2015-08-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] 低消費LSIのためのIII-V族半導体およびGe/ひずみSOIトンネルFETテクノロジー2015

    • Author(s)
      高木信一, 金閔洙, 野口宗隆, ジ・サンミン, 西康一, 竹中充
    • Organizer
      応用物理学会シリコンテクノロジー分科会共催研究集会第184回研究集会「先端CMOSデバイス・プロセス技術(VLSIシンポジウム特集)」
    • Place of Presentation
      甲南大学ネットワークキャンパス東京(東京都千代田区)
    • Year and Date
      2015-08-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Ni-InGaAsP alloy for low-resistivity lateral PIN junction formation in carrier-injected InGaAsP photonic devices2015

    • Author(s)
      J.-K. Park, M. Takenaka, and S. Takagi
    • Organizer
      5th International Symposium on Photonics and Electronics Convergence
    • Place of Presentation
      Ito Hall, The University of Tokyo, Bunkyo-ku, Hongo, Tokyo
    • Year and Date
      2015-12-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] A novel Ge waveguide platform on Ge-on-Insulator substrate for mid-infrared photonics2015

    • Author(s)
      J. Kang, X. Yu, M. Takenaka, and S. Takagi
    • Organizer
      5th International Symposium on Photonics and Electronics Convergence (ISPEC2015)
    • Place of Presentation
      Tokyo
    • Year and Date
      2015-12-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs2015

    • Author(s)
      X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Ge/SiGe CMOS device technology for future logic LSIs2015

    • Author(s)
      S. Takagi, W.-K. Kim, X. Yu, J.-h. Han, R. Zhang and M. Takenaka
    • Organizer
      E-MRS Spring meeting 2015, Symposium K, "Transport and photonics in group IV-based nanodevices"
    • Place of Presentation
      Lille Grand Palace, Lille, France
    • Year and Date
      2015-05-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Properties of slow traps of ALD Al2O3/GeOx/Ge gate stacks with plasma post oxidation2015

    • Author(s)
      M. Ke, X. Yu, M. Takenaka and S. Takagi
    • Organizer
      46th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Place of Presentation
      Key Bridge Marriott, Arlington, USA
    • Year and Date
      2015-12-03
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] III-V-OI基板上における量子井戸インターミキシングの検討2015

    • Author(s)
      高島 成也、一宮 佑希、竹中 充、高木 信一
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] III-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applications2015

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      13th International Meeting for Future of Electron Devices, Kansai (IMFEDK)
    • Place of Presentation
      龍谷大学アバンティ京都ホール(京都府京都市)
    • Year and Date
      2015-06-04
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Advanced Nano CMOS using Ge/III-V semiconductors for Low Power Logic LSIs2015

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      15th IEEE International Conference on Nanotechnology
    • Place of Presentation
      Angelicum Congress Centre, Rome, Italy
    • Year and Date
      2015-07-27
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Ge/III-V MOS Device Technologies for Low Power Integrated Systems2015

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      45th European Solid-State Device Conference (ESSDERC)
    • Place of Presentation
      Messe Congress Graz Betriebsgesellschaft, Graz, Austria
    • Year and Date
      2015-09-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Gate stack technologies for high mobility channel MOSFETs2015

    • Author(s)
      S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
    • Organizer
      2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory”
    • Place of Presentation
      Moscone West Convention Cener, San Francisco, USA
    • Year and Date
      2015-04-06
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si2015

    • Author(s)
      M. Takenaka, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J.-K. Park, S.-H Kim, and S. Takagi
    • Organizer
      International Electron Devices Meeting
    • Place of Presentation
      Washington Hilton, Washington D.C, USA
    • Year and Date
      2015-12-09
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si2015

    • Author(s)
      M. Takenaka, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J.-K. Park, S.-H Kim, and S. Takagi
    • Organizer
      International Electron Devices Meeting (IEDM’15)
    • Place of Presentation
      31.5, Washington D.C.
    • Year and Date
      2015-12-09
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] III-V and Ge tunneling FET technologies for low power LSIs2015

    • Author(s)
      S. Takagi, M.-S. Kim, M. Noguchi, S.-M. Ji, K. Nishi and M. Takenaka
    • Organizer
      Symposia on VLSI Technology
    • Place of Presentation
      京都リーガローヤルホテル(京都府京都市)
    • Year and Date
      2015-06-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] III-V on SiC基板を用いた光集積回路プラットフォームの提案2015

    • Author(s)
      竹中充,高木信一
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市熱田区)
    • Year and Date
      2015-09-14
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Tunneling FET Device Technologies Using III-V and Ge Materials2015

    • Author(s)
      S. Takagi, M. Kim, M. Noguchi, K. Nishi, M. Takenaka
    • Organizer
      4th Berkeley Symposium on Energy Efficient Electronic Systems (E3S)
    • Place of Presentation
      University of California, Berkeley, California, USA
    • Year and Date
      2015-10-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation2015

    • Author(s)
      Rui Zhang, Mitsuru Takenaka, Shinichi Takagi
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] II-V-OI基板のパターニングによるボイド低減の検討2015

    • Author(s)
      高島 成也, 一宮 佑希, 竹中 充, 高木 信一
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市熱田区)
    • Year and Date
      2015-09-14
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] III-V CMOS device technologies on Si platform2014

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      E-MRS Fall Meeting
    • Place of Presentation
      Warsaw University of Technology, Warsaw, Poland
    • Year and Date
      2014-09-16
    • Invited
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] nチャネルGel-xSnx MOSFETの電流-電圧特性へのSn組成依存性2014

    • Author(s)
      浅野孝典, 田岡紀之, 加藤公彦, 坂下満男, 張睿, 横山正史, 竹中充, 高木信一、財満鎭明
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Year and Date
      2014-03-18
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] 容量値の時間応答を利用したGe MOS界面における遅い準位の定量的評価2014

    • Author(s)
      田中克久,張睿,竹中充,高木信一
    • Organizer
      2014年第61回 応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] 小型低クロストークInGaAsP細線導波路光スイッチの作製2014

    • Author(s)
      一宮佑希,横山正史,竹中充,高木信一
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(北海道札幌市)
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Ge-on-Insulator Substrate Fabrication for Ge CMOS Photonics Platform2014

    • Author(s)
      J. Kang, X. Yu, M. Takenaka, and S. Takagi
    • Organizer
      4th International Symposium on Photonics and Electronics Convergence (ISPEC2014)
    • Place of Presentation
      ENEOS hall, The University of Tokyo
    • Year and Date
      2014-11-18
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] InGaAs MSM photodetector with InAlAs and InP cap layers on III-V CMOS photonics platform for low dark current operation2014

    • Author(s)
      Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi
    • Organizer
      4th International Symposium on Photonics and Electronics Convergence
    • Place of Presentation
      ENEOS hall, The University of Tokyo, Meguro, Tokyo
    • Year and Date
      2014-11-18
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] III-V/Ge CMOS Device Technologies for Future Logic LSIs2014

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      7th International SiGe Technology and Device Meeting (ISTDM)
    • Place of Presentation
      Swissotel Merchant Court, Singapore, Singapore
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Ge-on-Insulator fabrication by smartcut technology for Ge CMOS photonics platform2014

    • Author(s)
      亢健,玉虓,竹中充,高木信一
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates2014

    • Author(s)
      X.Yu, R.Zhang, J.Kang, T.Osada, M.Hata, M.Takenaka and S.Takagi
    • Organizer
      21st International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
    • Place of Presentation
      Ambassador Hotel Hsinchu, Hsinchu, Taiwan
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates2014

    • Author(s)
      X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka and S. Takagi
    • Organizer
      2014年第61回 応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Ultra-small, low-crosstalk, electrically-driven InGaAsP photonic-wire optical switches on III-V CMOS photonics platform2014

    • Author(s)
      Y. Ikku, M.Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      Optical Fiber Communication Conference (OFC2014)
    • Place of Presentation
      San Francisco
    • Year and Date
      2014-03-13
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks2014

    • Author(s)
      R. Zhang, W. Chern, X. Yu, M. Takenaka, J. L. Hoyt and S. Takagi
    • Organizer
      2014年第61回 応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Low-crosstalk carrier-injection Mach-Zehnder interferometer optical switches with 50-μm-long phase shifters on III-V CMOS photonics platform2014

    • Author(s)
      Y. Ikku, M. Yokoyama, M. Takenaka, and S. Takagi
    • Organizer
      4th International Symposium on Photonics and Electronics Convergence
    • Place of Presentation
      ENEOS hall, The University of Tokyo, Meguro, Tokyo
    • Year and Date
      2014-11-18
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] ark current reduction of waveguide InGaAs MSM photodetector on III-V CMOS photonics platform by InAlAs cap layer2014

    • Author(s)
      Y. Cheng,一宮佑希,竹中充,高木信一
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(北海道札幌市)
    • Year and Date
      2014-09-17
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Sb拡散ソース・ドレインを有する酸化濃縮基板上反転型極薄膜Ge-on-Insulator nMOSFET2014

    • Author(s)
      金佑彊, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
    • Organizer
      2014年第61回 応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V CMOS photonics platform for low-power and low-crosstalk photonic-wire switches and modulators2014

    • Author(s)
      M. Takenaka, Y. Ikku, and S. Takagi
    • Organizer
      Advanced Photonics for Communications
    • Place of Presentation
      Hilton San Diego, San Dieog, USA
    • Year and Date
      2014-07-15
    • Invited
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Low-resistance lateral junction formation for laser diodes on III-V CMOS photonics platform2014

    • Author(s)
      Y. Ikku, and M. Takenaka, and S. Takagi
    • Organizer
      24th IEEE International Semiconductor Laser Conference
    • Place of Presentation
      Meli&#225; Palas Atenea, Palma de Mallorca, Spain
    • Year and Date
      2014-09-08
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] III-V-OI 基板の耐熱性向上技術および低抵抗横型PIN 接合形成技術2014

    • Author(s)
      一宮 佑希, 竹中 充, 高木 信一
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      機会振興会館(東京都港区)
    • Year and Date
      2014-12-19
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Performance Enhancement Technologies in III-V/Ge MOSFETs2013

    • Author(s)
      S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
    • Organizer
      224th Fall meeting of the Electrochemical Society, ULSI Process Integration 8
    • Place of Presentation
      The Hilton San Francisco Hotel, San Francisco, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] MOS interface engineering for high-mobility Ge CMOS2013

    • Author(s)
      M. Takenaka, R. Zhang, S. Takagi
    • Organizer
      IEEE International Reliability Physics Symposium (IRPS'13)
    • Place of Presentation
      Monterey, USA(招待講演)
    • Year and Date
      2013-04-17
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing2013

    • Author(s)
      R. Zhang, J-C. Lin, X. Yu, M. Takenaka, and S. Takagi
    • Organizer
      VLSI Symposium
    • Place of Presentation
      Rihga Royal Hotel, Kyoto
    • Year and Date
      2013-06-11
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] III-V/Ge MOS Transistor Technologies for Future ULSI2013

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
    • Place of Presentation
      Grand H&#244;tel de Paris, Villard de Lans, France
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Examination of Physical Origins Limiting Effective Mobility of Ge MOSFETs and the Improvement by Atomic Deuterium Annealing2013

    • Author(s)
      R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
    • Organizer
      2013 Symposia on VLSI Technology
    • Place of Presentation
      リーガロイヤルホテル京都(京都府京都市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V/Ge MOS Transistor Technologies for Future ULSI2013

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
    • Place of Presentation
      Grand Hotel de Paris, Villard de Lans, France
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V CMOSフォトニクスプラットフォームと光インターコネクションへの展開2013

    • Author(s)
      竹中充,一宮佑希,キムサンヒョン,横山正史,高木信一
    • Organizer
      電子情報通信学会総合大会
    • Place of Presentation
      岐阜大学、岐阜
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] MOS interface engineering for high-mobility Ge CMOS2013

    • Author(s)
      M.Takenaka, R.Zhang, and S.Takagi
    • Organizer
      International Reliability Physics Symposium (IRPS)
    • Place of Presentation
      Hyatt Regency Monterey, Monterey, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation2013

    • Author(s)
      R.Zhang, W.Chern, X.Yu, M.Takenaka, J.L.Hoyt and S.Takagi
    • Organizer
      International Electron Device Meeting (IEDM)
    • Place of Presentation
      Washington Hilton, Washington, DC, USA
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation Hf02/Al203/GeOx gate stacks and strain modulation2013

    • Author(s)
      R. Zhang, W. Chern, X. Yu, M. Takenaka, J. L. Hoyt, S. Takagi
    • Organizer
      International Electron Devices Meeting (IEDM' 13)
    • Place of Presentation
      Wasnington Hilton, Washington D. C., U.S.A.
    • Year and Date
      2013-12-11
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Limiting factors of channel mobility in III-V/Ge MOSFETs2013

    • Author(s)
      S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
    • Organizer
      223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
    • Place of Presentation
      The Sheraton Centre Toronto Hotel, Toronto, Canada
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V/Ge device engineering for CMOS photonics2013

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      8th international conference on processing and manufacturing of advanced materials (THERMEC2013)
    • Place of Presentation
      Rio Hotel, Las Vegas, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V/Ge CMOS device technologies2013

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      20th Symposium on Nano Device Technology (SNDT)
    • Place of Presentation
      International Conference Hall of Nano Device Laboratory, Hsinchu, Taiwan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance2013

    • Author(s)
      S. Takagi, R. Zhang, N. Taoka, R. Suzuki, S.-H. Kim, M. Yokoyama, and M. Takenaka
    • Organizer
      2013 MRS (Material Research Society) Spring Meeting, Symposium CC “Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory”
    • Place of Presentation
      Moscone Center, San Francisco, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] High Quality Ge Gate Stacks Technologies by Using Plasma Oxidation2013

    • Author(s)
      S. Takagi, R. Zhang and M. Takenaka
    • Organizer
      JSPS Core-to-Core Program Seminar, “Atomically Controlled Processing for Ultralarge Scale Integration”
    • Place of Presentation
      九州大学医学部百年講堂(福岡県福岡市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels2013

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference (NMDC)
    • Place of Presentation
      National Cheng Kung University, Tainan, Taiwan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties2013

    • Author(s)
      S.Takagi, R.Zhang and M.Takenaka
    • Organizer
      18th Conference of "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      The Jagiellonian University, Cracow, Poland (plenary)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Characterization of Interface Properties of Au/Al2O3/GeOx/Ge MOS Structures2013

    • Author(s)
      J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
    • Organizer
      6th International Symposium on Control of Semiconductor Interfaces (ISCSI)
    • Place of Presentation
      九州大学医学部百年講堂(福岡県福岡市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Ultra-thin body MOS device technologies using high mobility channel materials2013

    • Author(s)
      S. Takagi, S.-H. Kim, M. Yokoyama, W.-K. Kim, R. Zhang and M. Takenaka, “Ultra-thin body MOS device technologies using high mobility channel materials
    • Organizer
      IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
    • Place of Presentation
      Hyatt Regency Monterey Hotel, Monterey, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Heterogeneous integration for CMOS photonics2013

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013)
    • Place of Presentation
      Tokyo
    • Year and Date
      2013-11-20
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Impact of Plasma Post Oxidation Temperature on Interface Trap Density and Roughness at GeOx/Ge Interfaces2013

    • Author(s)
      R.Zhang, Ju-Chin Lin, X.Yu, M.Takenaka and S.Takagi
    • Organizer
      18th Conference of "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      The Jagiellonian University, Cracow, Poland
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Characterization of Interface Traps in Au/Al2O3/GeOx/Ge MOS Structures2013

    • Author(s)
      J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
    • Organizer
      2013年秋季第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都府京田辺市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] 酸化濃縮基板へのSbドーピングにより作製した極薄膜Ge-on-Insulator nMOSFETs2013

    • Author(s)
      金佑彊, 忻宇飛, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
    • Organizer
      2013年秋季第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都府京田辺市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] 原子層平坦GeOx/Ge界面によるGe MOSFETsの高電界領域移動度の向上2013

    • Author(s)
      張睿,黄博勤,林汝静,竹中充,高木信一
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] MOS interface engineering for high-mobility Ge CMOS2013

    • Author(s)
      M. Takenaka, R. Zhang, S. Takagi
    • Organizer
      IEEE International Reliability Physcis Symposium (IRPS' 13)
    • Place of Presentation
      Hyatt Regency Monterey Hotel and Spa, Monterey, U.S.A.
    • Year and Date
      2013-04-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Waveguide InGaAs MSM photodetector for chip-scale optical interconnects on III-V CMOS photonics platform2013

    • Author(s)
      Y. Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      Asia Communications and Photonics Conference (ACP2013)
    • Place of Presentation
      Beijin
    • Year and Date
      2013-11-14
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance2013

    • Author(s)
      S.Takagi, R.Zhang, N.Taoka, R.Suzuki, S.-H.Kim, M.Yokoyama, and M.Takenaka
    • Organizer
      2013 MRS (Material Research Society) Spring Meeting, Symposium CC "Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory"
    • Place of Presentation
      Moscone Center, San Francisco, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V CMOSフォトニクスを用いたInGaAsP細線導波路光スイッチ2013

    • Author(s)
      一宮佑希,横山正史,市川磨,秦雅彦,竹中充,高木信一
    • Organizer
      電子情報通信学会総合大会
    • Place of Presentation
      岐阜大学、岐阜
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] III-V/Ge CMOSフォトニクス実現に向けたデバイス技術2013

    • Author(s)
      竹中充, 高木信一
    • Organizer
      第77回半導体・集積回路技術シンポジウム
    • Place of Presentation
      東京工業大学蔵前会館(東京都目黒区)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Low-crosstalk 2 × 2 InGaAsP photonic-wire optical switches using III-V CMOS photonics platform2013

    • Author(s)
      Y. Ikku, M. Yokoyama, N. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      European Conference on Optical Communication (ECOC'13)
    • Place of Presentation
      London
    • Year and Date
      2013-09-24
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] 0.7 nm超薄EOT HfO2/Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge CMOS2013

    • Author(s)
      張睿,林汝静,黄博勤,田岡紀之,竹中充,高木信一
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Sb-diffused source/drain ultra-thin body Ge-on insulator nMOSFETs fabricated by Ge condensation2013

    • Author(s)
      W. K. Kim, Y. Kin, Y. H. Kim, S. H. Kim, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2013)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk, Fukuoka city, Fnkuoka
    • Year and Date
      2013-09-27
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] High performance sub-20-nm-channel-length extremely-thin body InAs-on-Insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability2013

    • Author(s)
      S.-H. Kim, M. Yokoyama, R. Nakane, M. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
    • Organizer
      International Electron Devices Meeting (IEDM'13)
    • Place of Presentation
      Washington D. C
    • Year and Date
      2013-12-10
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Ge oxide growth by plasma oxidation of Ge substrates through Al2O3 Layers2013

    • Author(s)
      R. Zhang, J.-C. Lin, M. Takenaka, and S. Takagi
    • Organizer
      5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      Nagoya, Japan
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] III-V CMOSフォトニクスを用いた低電流駆動光スイッチ2013

    • Author(s)
      一宮佑希,横山正史,市川磨,秦雅彦,竹中充,高木信一
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学、神奈川
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] III-V/Ge CMOS device technologies for high performance logic applications2013

    • Author(s)
      S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
    • Organizer
      223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
    • Place of Presentation
      The Sheraton Centre Toronto Hotel, Toronto, Canada
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V/Ge MOS Interface Control Using and High k Films2013

    • Author(s)
      S.Takagi, R.Zhang, R.Suzuki, C.-Y.Chang, N.Taoka, S.-H.Kim, M.Yokoyama and M.Takenaka
    • Organizer
      15th Asian Chemical Congress (15ACC)
    • Place of Presentation
      Resorts World Sentosa, Singapore, Singapore
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V/Ge device engineering for CMOS photonics2013

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      International Conference on Processing & Manufacturing of Advanced Materials (THERMEC2013)
    • Place of Presentation
      Las Vegas
    • Year and Date
      2013-12-03
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] III-V/Ge device engineering for CMOS photonics2013

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      International Conference on Processing Manufacturing of Advanced Materials (THERMEC2013)
    • Place of Presentation
      Rio Hotel, Las Vegas, U.S.A.
    • Year and Date
      2013-11-20
    • Invited
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] MOS interface control of high mobility channel materials for advanced CMOS applications2013

    • Author(s)
      S.Takagi, R.Zhang, R.Suzuki, N.Taoka, M.Yokoyama and M.Takenaka
    • Organizer
      3rd Molecular Materials Meeting (M3)
    • Place of Presentation
      Singapore, Singapore
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Heterogeneous integration for CMOS photonics2013

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013)
    • Place of Presentation
      Eneos Hall, Meguro-ku, Tokyo
    • Year and Date
      2013-11-20
    • Invited
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Examination of Physical Origins Limiting Effective Mobility of Ge MOSFETs and the Improvement by Atomic Deuterium Annealing2013

    • Author(s)
      R.Zhang, J-C.Lin, X.Yu, M.Takenaka and S.Takagi
    • Organizer
      2013 Symposia on VLSI Technology
    • Place of Presentation
      リーガロイヤルホテル京都(京都府京都市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Ultra-thin body MOS device technologies using high mobility channel materials2013

    • Author(s)
      S.Takagi, S.-H.Kim, M.Yokoyama, W.-K.Kim, R.Zhang and M.Takenaka
    • Organizer
      IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
    • Place of Presentation
      Hyatt Regency Monterey Hotel and Spa, Monterey, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Ge p- and n-MOSFETの高電界領域での移動度劣化機構の解析2013

    • Author(s)
      張睿,黄博勤,林汝静,竹中充,高木信一
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing2013

    • Author(s)
      R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
    • Organizer
      2013年秋季第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都府京田辺市)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties2013

    • Author(s)
      S. Takagi, R. Zhang and M. Takenaka
    • Organizer
      18th Conference of "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      The Jagiellonian University, Cracow, Poland
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] InPとAl2O3パッシベーションによるInGaAsP細線導波路の損失改善2012

    • Author(s)
      一宮佑希、横山正史、市川磨、秦雅彦、竹中充、高木信一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学、愛媛
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Propagation-loss reduction in InGaAsP photonic-wire waveguides by InP and Al_2O_3 passivation layers2012

    • Author(s)
      Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka and S. Takagi
    • Organizer
      16th European Conference on Integrated Optics (ECIO'12)
    • Place of Presentation
      Barcelona
    • Year and Date
      2012-04-18
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] High Mobility Ge n- and p-MOSFETs with ~1nm EOT Al2O3/GeOx/Ge Gate Stacks2012

    • Author(s)
      張睿、田岡紀之、黄博勤、竹中充、高木信一
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform2012

    • Author(s)
      Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      European Conference on Optical Communication
    • Place of Presentation
      Amsterdam, Netherland
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Physical mechanism determining Ge p- and n-MOSFETs mobility in high ns region and mobility improvement by atomically flat GeOx/Ge interfaces2012

    • Author(s)
      R. Zhang, P.C. Huang, J.C. Lin, M. Takenaka, S. Takagi
    • Organizer
      International Electron Devices Meeting (IEDM’12)
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] InGaAsP photonic-wire Mach-Zehnder interferometer switches fabricated on III-V CMOS photonics platform2012

    • Author(s)
      Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      2nd International Symposium on Photonics and Electronics Convergence
    • Place of Presentation
      The University of Tokyo, Tokyo
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] III-V/Ge integration on Si platform for electronic-photonic integrated circuits2012

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Okinawa Seinen-kaikan, Okinawa
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Propagation-loss reduction in InGaAsP photonic-wire waveguides by InP and Al2O3 passivation layers2012

    • Author(s)
      Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka and S. Takagi
    • Organizer
      European Conference on Integrated Optics
    • Place of Presentation
      Barcelona, Spain
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform2012

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      13th International Conference on Ultimate Integration on Silicon (ULIS 2012)
    • Place of Presentation
      Grenoble, France(invited)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation2012

    • Author(s)
      R. Zhang, P.-C. Huang, N. Taoka, M. Takenaka, S. Takagi
    • Organizer
      VLSI Symposium
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] III-V/Ge integration on Si platform for electronic-photonic integrated circuits2012

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD'12)
    • Place of Presentation
      Naha
    • Year and Date
      2012-06-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] 高性能光電子集積回路に向けたIII-V CMOSフォトニクスプラットフォーム技術2012

    • Author(s)
      竹中充、一宮佑希、キムサンヒョン、横山正史、高木信一
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学、富山
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Advanced Nano CMOS Platform using High Mobility Channel Materials2012

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      International Symposium on Secure-Life Electronics-Advanced Electronics and Information Systems for Quality Life and Society-
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS2012

    • Author(s)
      S.Takagi, S,-H, Kim, R.Zhang, M.Yokoyama, N.Taoka and M.Takenaka
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM 2011)
    • Place of Presentation
      国立京都国際会館、京都府
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V/Ge integration on Si platform for electronic-photonic integrated circuits2012

    • Author(s)
      M. Takenaka
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
    • Place of Presentation
      沖縄青年会館、沖縄県
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012

    • Author(s)
      R. Zhang, P. Huang, J. Lin, M. Takenaka, and S. Takagi
    • Organizer
      The PRiME 2012 Joint International (222nd) ECS Meeting
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] High Mobility Ge n- and p-MOSFETs with 1nm EOT Al2O3/GeOx/Ge Gate stacks2012

    • Author(s)
      R.Zhang, N.Taoka, P.-C.Huang, M.Takenaka, S.Takagi
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      東京(受賞講演)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] MOS interface and channel engineering for high-mobility Ge/III-V CMOS2012

    • Author(s)
      S.Takagi, R.Zhang, S.-H Kim, N.Taoka, M.Yokoyama, J.-K.Suh, R.Suzuki, Y.Asakura, C.Zota and M.Takenaka
    • Organizer
      2012 International Electron Devices Meeting (IEDM)
    • Place of Presentation
      San Francisco, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces2012

    • Author(s)
      R.Zhang, P.-C.Huang, J.-C.Lin, M.Takenaka and S.Takagi
    • Organizer
      2012 International Electron Devices Meeting (IEDM)
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] 0.7 nm超薄EOT HfO2/Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFETs2012

    • Author(s)
      張睿、林汝静、黄博勤、田岡紀之、竹中充、高木信一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform2012

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      13th International Conference on Ultimate Integration on Silicon (ULIS 2012)
    • Place of Presentation
      Grenoble, France
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform2012

    • Author(s)
      Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      European Conference on Optical Communication (ECOC'12)
    • Place of Presentation
      Amsterdam
    • Year and Date
      2012-09-18
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012

    • Author(s)
      R.Zhang, P.-C.Huang, M.Takenaka and S.Takagi
    • Organizer
      Symposium on 5th International SiGe, Ge, & Related Compounds : Materials, Processing, and Devices, Symposium E of the 222nd Electrochemical Society (ECS) Meeting
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1-xAs-on-insulator MOSFETs on a Si with Ni-InGaAs metal S/D and MOS interface buffer Engineering2012

    • Author(s)
      S. H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
    • Organizer
      VLSI Symposium
    • Place of Presentation
      Honolulu, United Sates of America
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2012

    • Author(s)
      R.Zhang, P.C.Huang, N.Taoka, M.Takenaka and S.Takagi
    • Organizer
      Symposium on VLSI technology
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Advanced CMOS Technologies using III-V/Ge Channels2011

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      11th International Symposium on VLSI Technology, System and Applications (VLSI-TSA)
    • Place of Presentation
      Hsinchu, Taiwan(invited)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, N.Taoka, P.Huang, M.Takenaka and S.Takagi
    • Organizer
      International Electron Devices Meeting (IEDM)
    • Place of Presentation
      Washington DC., USA
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] MOS Interface Properties of Ge Gate Stacks based on Ge oxides and the Impact on MOS Device Performance2011

    • Author(s)
      S.Takagi, R.Zhang, N.Taoka and M.Takenaka
    • Organizer
      41th IEEE Semiconductor Interface Specialists Conference (SISC 2011)
    • Place of Presentation
      Arlington, VA, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] プラスマ後酸化法による1 nm EOT Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFETs2011

    • Author(s)
      張睿、田岡紀之、岩崎敬志、竹中充、高木信一
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge HOS interface Properties2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      7th Conference on Insulating Films on Semiconductor
    • Place of Presentation
      Grenoble, France
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge MOS interface Properties2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] メタルS/D 構造及びMOS interface buffer 層の導入による極薄膜 InGaAs-OI MOSFET の高性能化2011

    • Author(s)
      金相賢、横山正史、田岡紀之、飯田亮、李成薫、中根了昌、卜部友二、宮田典幸、安田哲二、山田永、福原昇、秦雅彦、竹中充、高木信一
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学、山形
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Mobility Enhancement of Strained-SGOI p-Channel MOSFETs by Applying Ge Condensation Technique to Strained-SOI Substrates2011

    • Author(s)
      J.Suh, R.Nakane, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      第72回応用物理学関係連合講演会
    • Place of Presentation
      山形
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] ALD Al2O3 activated direct wafer bonding for III-V CMOS photonics platform2011

    • Author(s)
      Y. Ikku, M. Yokoyama, R. Iida, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi
    • Organizer
      Indium Phosphide and Related Materials
    • Place of Presentation
      Berlin, Germany
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge MOS interface Properties2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
    • Organizer
      17th Conference on "Insulating Films on Semiconductors"
    • Place of Presentation
      Grenoble, France
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] High Mobility Ge pMOSFETs with 1nm Thin EOT using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      Symposium on VLSI technology
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Non-Si Channel MOS Device Technologies in Nano-CMOS era2011

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      2011 Tsukuba Nanotechnology Symposium (TNS' 11)
    • Place of Presentation
      つくば、茨城(invited)
    • Year and Date
      2011-12-15
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Mobility enhancement of strained-SGOI p-channel MOSFETs by applying Ge condensation technique to strained-SOI substrates2011

    • Author(s)
      徐準教、中根了昌、田岡紀之、竹中充、高木信一
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation2011

    • Author(s)
      R. Zhang, N. Taoka, P. Huang, M. Takenaka, S. Takagi
    • Organizer
      International Electron Devices Meeting (IEDM2011)
    • Place of Presentation
      Washington D.C., USA
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] III-V on Silicon for high-speed electronics and CMOS photonics2011

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      Indium Phosphide and Related Materials (IPRM'11)
    • Place of Presentation
      Berlin
    • Year and Date
      2011-05-23
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Device and integration technologies of III-V/Ge channel CMOS2011

    • Author(s)
      S.Takagi, M.Yokoyama, Y.-H.Kim, M.Takenaka
    • Organizer
      Symposium on ULSI Process Integration 7, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting
    • Place of Presentation
      Boston, Massachusetts, USA(invited)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] プラスマ後酸化法による1 nm EOT Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFET2011

    • Author(s)
      張睿, 岩崎敬志, 田岡紀之, 竹中充, 高木信一
    • Organizer
      応用物理学会シリコンテクノロジー分科会第139回研究集会
    • Place of Presentation
      東京(招待講演)
    • Year and Date
      2011-07-21
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Enhancement technologies and physical understanding of electron mobility in III-V n-MOSFETs with strain and MOS interface buffer engineering2011

    • Author(s)
      S.H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, M. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
    • Organizer
      International Electron Devices Meeting
    • Place of Presentation
      Washington D.C., United States of America
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Highly-Strained SGOI p-Channel MOSFETs Fabricated by Applying Ge Condensation Technique to Strained-SOI Substrates2011

    • Author(s)
      J.-K.Suh, R.Nakane, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      37th Device Research Conference (DRC)
    • Place of Presentation
      Santa Barbara, CA, USA
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] High Nobility Ge pMOSFETs with 1nm Thin EOT Al2O3/GeOx/Ge Gate stacks2011

    • Author(s)
      R.Zhang, N.Taoka, T.Iwasaki, M.Takenaka, S.Takagi
    • Organizer
      第72回応用物理学関係連合講演会
    • Place of Presentation
      山形
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Highly-Strained SGOI p-Channel MOSFETs Fabricated by Applying Ge Condensation Technique to Strained-SOI Substrates2011

    • Author(s)
      J.-K.Suh, R.Nakane, N.Taoka, M.Takenaka and S.Takagi
    • Organizer
      37th Device Research Conference (DRC)
    • Place of Presentation
      Santa Barbara, USA
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, N.Taoka, P.Huang, M.Takenaka, S.Takagi
    • Organizer
      International Electron Devices Meeting (IEDM)
    • Place of Presentation
      Washington DC, DSA
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering2011

    • Author(s)
      S.H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
    • Organizer
      VLSI Symposium
    • Place of Presentation
      Rihga Royal Hotel Kyoto, Kyoto
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Prospective and critical issues of III-V/Ge CMOS on Si platform2011

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      219th Electrochemical Society Meeting, Symposium E3 : International Symposiu on Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications -3
    • Place of Presentation
      Montreal, Canada(invited)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Non-Si材料チャネルMOSトランジスタの研究開発動向2011

    • Author(s)
      高木信一, 竹中充
    • Organizer
      日本学術振興会ナノプローブテクノロジー第167委員会第63回研究会
    • Place of Presentation
      神奈川(招待講演)
    • Year and Date
      2011-07-28
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Highly-strained SGOI p-channel MOSFETs fabricated by applying Ge condensation technique to strained-SOI substrates2011

    • Author(s)
      J. Suh, R. Nakane, N. Taoka, M. Takenaka, and S. Takagi
    • Organizer
      Device Research Conference (DRC 2011)
    • Place of Presentation
      Santa Barbara, USA
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] MOS Interface Properties of Ge Gate Stacks based on Ge oxides and the Impact on MOS Device Performance2011

    • Author(s)
      S.Takagi, R.Zhang, N.Taoka, M.Takenaka
    • Organizer
      41th IEEE Semiconductor Interface Specialists Conference (SISC 2011)
    • Place of Presentation
      Arlington, VA, USA(invited)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] High Mobility Material Channel CMOS Technologies based on Heterogeneous Integration (Keynote Speech)2011

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      11th International Workshop on Junction Technology (IWJT2011)
    • Place of Presentation
      Kyoto, Japan(invited)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] MOS interface control technologies for III-V/Ge channel MOSFETs2011

    • Author(s)
      S.Takagi, R.Zhang, T.Hoshii, M.Takenaka
    • Organizer
      Symposium on High Dielectric Constant and other Dielectric Materials for Nanoeleectronics and Photonics 9, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting
    • Place of Presentation
      Boston, Massachusetts, USA(invited)
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] Impact of GeOx interfacial layer thickness of Al2O3/Ge MOS interface Properties2011

    • Author(s)
      R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka and S. Takagi
    • Organizer
      17th Conference on Insulating Films on Semiconductors (INFOS' 11)
    • Place of Presentation
      Grenoble, France
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] ALD Al2O3を用いたIII-V CMOS Photonics用貼り合わせ基板の特性改善2011

    • Author(s)
      一宮佑希、横山正史、飯田亮、杉山正和、中野義昭、竹中充、高木信一
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] III-V CMOS technologies on Si platform2011

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      MRS Spring Meeting
    • Place of Presentation
      San Francisco, United States of America
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] High Mobility Ge pMOSFETs with ~ 1nm Thin EOT using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
    • Organizer
      VLSI symp.
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-23246058
  • [Presentation] III-V CMOS technologies on Si platform2011

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      MRS Spring Meeting
    • Place of Presentation
      San Francisco
    • Year and Date
      2011-04-27
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] III-V on Silicon for high-speed electronics and CMOS photonics2011

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      Indium Phosphide and Related Materials
    • Place of Presentation
      Berlin, Germany
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] High mobility Ge pMOSFETs with ~ 1nm thin EOT using Al2O3/GeOx/Ge Gate Stacks fabricated by plasma post oxidation2011

    • Author(s)
      R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka and S. Takagi
    • Organizer
      VLSI Symposium., 4A-1, , June 2011
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] 気相拡散によるソース・ドレイン接合を用いた高性能GeO2/Ge nMOSFET2010

    • Author(s)
      森井清仁, 岩崎敬志, 中根了昌, 竹中充, 高木信一
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、神奈川県
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] High Mobility CMOS Technologies using Ge-based Channels2010

    • Author(s)
      高木信一, 竹中充
    • Organizer
      5th international SiGe Technology and Device Meeting(ISTDM)
    • Place of Presentation
      Stockholm, Sweden
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Evidence of Correlation between Surtace Roughness and Intertace States Generationin Unstrained and Strained-Si MOSFETs2010

    • Author(s)
      Y.Zhao, M.Takenaka, S. Takagi
    • Organizer
      2010 Symposium on VLSI Technology
    • Place of Presentation
      Horwlulu, Hawaii, USA
    • Year and Date
      2010-06-17
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] 気相拡散により形成したソース・ドレイン接合を用いた高性能GeO2/Ge nMOSFET2010

    • Author(s)
      森井清仁, 岩崎敬志, 中根了昌, 竹中充, 高木信一
    • Organizer
      電気学会「グリーンITにおける化合物半導体電子デバイス」調査専門委員会
    • Place of Presentation
      大岡山、東京
    • Year and Date
      2010-03-26
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] 二軸引張りひずみSi MOS電子・正孔反転層における界面電荷・基板不純物によるクーロン散乱に与える影響の統一的な物理機構2010

    • Author(s)
      趙毅, 竹中充, 高木信一
    • Organizer
      第57回応物理学関係連合講演会
    • Place of Presentation
      東海大学、神奈川県
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] MOVPEを用いた気相ドーピングによる高品質Ge n+/p接合の形成およびGe nMOSFETへの応用2010

    • Author(s)
      竹中充, 森井清仁, 高木信一
    • Organizer
      電気学会シリコンナノデバイス集積化技術調査専門委員会・化合物半導体電子デバイス調査専門委員会合同委員会「高移動度化技術」
    • Place of Presentation
      早稲田、東京
    • Year and Date
      2010-03-05
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] 高精度TEMと新しいデータ分析方法によるMOS界面ラフネス移動度及びその引張り歪みの影響の定量評価2010

    • Author(s)
      趙毅, 松本弘昭, 佐藤岳志, 小山晋, 竹中充, 高木信一
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東京大学、神奈川県
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] 酸化濃縮法により生成したSGOI中の圧縮ひずみと酸化前基板構造の関係2010

    • Author(s)
      富山健太郎, Dissanayake Sanjeewa, 竹中充, 高木信一
    • Organizer
      第57回応用物理学関係迎合講演会
    • Place of Presentation
      東海大学、神奈川県
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] III-V CMOS photonicsプラットフォーム実現に向けたグレーティングカプラの作製2010

    • Author(s)
      竹中充、横山正史、杉山正和、中野義昭、高木信一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] 二軸引張りひずみSi MOS電子・正孔反転層における界面電荷・基板不純物によるクーロン散乱に与える影響の統一的な物理機構2010

    • Author(s)
      趙毅, 竹中充, 高木信一
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、神奈川県
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] 高性能光電子集積回路実現に向けたIII-V CMOSプラットフォーム技術2010

    • Author(s)
      竹中充、横山正史、杉山正和、中野義昭、高木信一
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      千歳アルカディアプラザ
    • Year and Date
      2010-08-26
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Evidence of Correlation between Surface Roughness and Interface States Generation in Unstrained and Strained-Si MOSFETs2010

    • Author(s)
      Y.Zhao, M.Takenaka, S.Takagi
    • Organizer
      2010 Symposium on VLSI Technology
    • Place of Presentation
      Honolulu, Hawaii, USA
    • Year and Date
      2010-06-17
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] Suppression of ALD-induced degradation of Ge MOS interface properties by low power plasma nitridation of GeO_22010

    • Author(s)
      R.Zhang, T.Iwasaki, M.Takenaka, S.Takagi
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM'10)
    • Place of Presentation
      東京大学(東京都)
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Si MOS界面ラフネス散乱による移動度とひずみの効果(招待講演)2010

    • Author(s)
      高木信一, 趙毅, 竹中充, 松本弘昭, 佐藤岳志, 小山晋
    • Organizer
      応用物理学会シリコンテクノロジー分科会第121回研究集会「半導体シリコン単結晶ウェーハを特徴づける評価技術」
    • Place of Presentation
      学習院大学、東京
    • Year and Date
      2010-03-12
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] High Mobility Ge CMOS Technologies2010

    • Author(s)
      高木信一, 竹中充
    • Organizer
      5th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Si MOS界面ラフネス散乱による移動度とひずみの効果2010

    • Author(s)
      高木信一, 趙毅, 竹中充, 松本弘昭, 佐藤岳志, 小山晋
    • Organizer
      応用物理学会シリコンテクノロジー分科会第121回研究集会「半導体シリコン単結晶ウェーハを特徴づける評価技術」
    • Place of Presentation
      学習院大学、東京(招待講演)
    • Year and Date
      2010-03-12
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] A Plasma Assisted Top-to-Bottom Assembly of Ge/GeOx/Al2O3 Gate Stack with Superior Electrical Properties2010

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Suppression of ALD-Induced Degradation on ultra thin GeO2 using Low Power Plasma Nitridation2010

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] Thin EOT and low D_<it>Al_2O_3/GeO_x/Ge Gate stacks fabricated by novel post-oxidation method2010

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      IEEE Semiconductor Interface Specialists conference (SISC'10)
    • Place of Presentation
      Washington D.C., USA
    • Year and Date
      2010-12-03
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] III-V/Ge CMOS technologies on Si platform2010

    • Author(s)
      高木信一, 竹中充
    • Organizer
      Symposium on VLSI Technology
    • Place of Presentation
      Honolulu, Hawaii
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] 高精度TEMと新しいデータ分析方法によるMOS界面ラフネス移動度及びその引張り歪みの影響の定量評価2010

    • Author(s)
      趙毅, 松本弘昭, 佐藤岳志, 小山晋, 竹中充, 高木信一
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、神奈川県
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] Electrical Properties of(110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Technique2009

    • Author(s)
      S.Dissanayake, Y.Shuto, S.Sugahara, M.Takenaka, S.Takagi
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学、富山県
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] High Performance(110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique2009

    • Author(s)
      S.Dissanayake, S.Sugahara, M.Takenaka, S.Takagi
    • Organizer
      International Conference on Solid Sate Devices and Materials(SSDM2009)
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] 高精度TEMと新しいデータ分析方法によるMOS界面ラフネス移動度の定量評価及び引張り歪からの影響2009

    • Author(s)
      趙毅, 松本弘昭, 佐藤岳志, 小山晋, 竹中充, 高木信一
    • Organizer
      第73回半導体・集積回路技術シンポジウム
    • Place of Presentation
      東京農工大学、東京
    • Year and Date
      2009-07-10
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] Fabrication of III-V MOS structureby using selective oxidation of InAlAs2009

    • Author(s)
      S. Nakagawa, M. Yokoyama, O. Ichikawa,M. Hata, M. Tanaka, M. Takenaka, S.Takagi
    • Organizer
      International Conference on Solid StateDevices and Materials (SSDM'08)
    • Place of Presentation
      G-9-4,Tsukuba
    • Year and Date
      2009-09-26
    • Data Source
      KAKENHI-PROJECT-19860024
  • [Presentation] Interfacial Control and Electrical Properties of Ge MOS structures2009

    • Author(s)
      S.Takagi, N.Taoka, M.Takenaka
    • Organizer
      10th International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics, 215th Meeting of The Electrochemical Society
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2009-05-25
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Advanced Nano CMOS Platform using Ge/III-V Channels2009

    • Author(s)
      S. Takagi, M. Sugiyama and M. Takenaka
    • Organizer
      First International Symposium on Atomically Controlied Fabrication Technology-Surface and Thin Film Processing-
    • Place of Presentation
      Osaka, Japan(invited)
    • Year and Date
      2009-02-17
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Ge/III-V Channel Engineering for future CMOS (invited)2009

    • Author(s)
      S. Takagi, M. Sugiyama, T. Yasuda, M. Takenaka
    • Organizer
      1st International Symposium on Graphene and Emerging Materials for Post-CMOS Applications, 215 th Meeting of The Electrochemical Society
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Impact of plasma nitridation of thermally-grown GeO2/Ge MIS structures on the GeO2 film and interface properties2009

    • Author(s)
      T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      40th IEEE Semiconductor Interface Specialists Conference(SISC)
    • Place of Presentation
      Washington D.C., USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] High Performance (110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique2009

    • Author(s)
      S. Dissanayake, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      SSDM
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] High Performance GeO2/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping2009

    • Author(s)
      森井清仁, 岩崎敬志, 中根了昌, 竹中充, 高木信一
    • Organizer
      International Electron Device Meeting(IEDM)
    • Place of Presentation
      Baltimore, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Interfacial Control and Electrical Properties of Ge MOS structures (invited)2009

    • Author(s)
      S. Takagi, N. Taoka, M. Takenaka
    • Organizer
      10th International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics, 215 th Meeting of The Electrochemical Society
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] High Performance GeO2/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping2009

    • Author(s)
      K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, S. Takagi
    • Organizer
      International Electron Device Meeting
    • Place of Presentation
      Baltimore, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Comprehensive Understanding of Surface Roughness Limited Mobility in Unstrained-and Strained-Si MOSFETs by Novel Characterization Scheme of Si/SiO2 Interface Roughness2009

    • Author(s)
      Y.Zhao, H.Matsumoto, T.Sato, S.Koyama, M.Takenaka, S.Takagi
    • Organizer
      Symposium on VLSI Technology
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2009-06-15
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] Ge/III-V Channel Engineering for future CMOS2009

    • Author(s)
      S.Takagi, M.Sugiyama, T.Yasuda, M.Takenaka
    • Organizer
      1st International Symposium on Graphene and Emerging Materials for Post-CMOS Applications, 215th Meeting of The Electrochemical Society
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2009-05-25
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Comprehensive Understanding of Surface Roughness Limited Mobility in Unstrained- and Strained-Si MOSFETs by Novel Characterization Scheme of Si/SiO2 Interface Roughness2009

    • Author(s)
      Y.Zhao, H.Matsumoto, T.Sato, S.Koyama, M.Takenaka, S.Takagi
    • Organizer
      Symposium on VLSI Technology
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2009-06-15
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] Gas phase doping of arsenic into germanium by using MOVPE system for source/drain formation of high performance Ge nMOSFETs2009

    • Author(s)
      M. Takenaka, M. Sugiyama, Y. Nakano, S. Takagi
    • Organizer
      Symposium I: Silicon and Germanium issues for future CMOS devices, E-MRS 2009
    • Place of Presentation
      Strasbourg (France)
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Impact of plasma nitridation of thermally-grown GeO2/Ge MIS structures on the GeO2 film and interface properties2009

    • Author(s)
      T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi
    • Organizer
      40th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      Washington D.C., USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Gas phase doping of arsenic into germanium by using MOVPE system for source/drain formation of high performance Ge nMOSFETs2009

    • Author(s)
      M.Takenaka, M.Sugiyama, Y.Nakano, S.Takagi
    • Organizer
      Symposium I : Silicon and Germanium issues for future CMOS devices, E-MRS 2009
    • Place of Presentation
      Strasbourg, France
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO2 Interfacial Layers2008

    • Author(s)
      Y. Nakakita, R. Nakane, T. Sasada, H. Matsubara, M. Takenaka and S. Takagi
    • Organizer
      International Electron Device Meeting (IEDM)
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Fabrication of III-V MOS structure by using selective oxidation of InAlAs2008

    • Author(s)
      S. Nakagawa, M. Yokoyama, O. Ichikawa, M. Hata, M. Tanaka, M. Takenaka. S. Takagi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      つくば
    • Year and Date
      2008-09-26
    • Data Source
      KAKENHI-PROJECT-19860024
  • [Presentation] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs2008

    • Author(s)
      K. Morii, S. Dissanayake, S. Tanabe, R. Nakane, M. Takenaka, S. Sugahara and S. Takaai
    • Organizer
      2008 International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Improvement of Interface Properties of GeO2/Ge MOS Structures Fabricated by Thermal Oxidation2008

    • Author(s)
      T. Sasada, H. Matsubara, M. Takenaka and S. Takaai
    • Organizer
      2008 International Conference on Solid State Devi ces and Materials (SSDM)
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO2 Interfacial Layers2008

    • Author(s)
      Yosuke Nakakita, Ryosho Nakane, Takashi Sasada, Hiroshi Matsubara, M. Takenaka, S. Takagi
    • Organizer
      International Electron Device Meeting
    • Place of Presentation
      San Fracisco, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Improvement of Interface Properties of GeO2/Ge MOS Structures Fabricated by Thermal Oxidation2008

    • Author(s)
      T. Sasada, H. Matsubara, M. Takenaka, S. Takagi
    • Organizer
      2008 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs2008

    • Author(s)
      Y.Zhao, M.Takenaka and S.Takagi
    • Organizer
      International Electron Device Meeting(IEDM)
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs2008

    • Author(s)
      Kiyohito Morii, Sanjeewa Dissanayake, Satoshi Tanabe, Ryosho Nakane, Mitsuru Takenaka, Satoshi Sugahara, Shinichi Takagi
    • Organizer
      2008 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Surface Orientation Dependence of Interface Properties of GeO2/Ge MOS Structures Fabricated by Thermal Oxidation2008

    • Author(s)
      Takashi Sasada, Yosuke Nakakita, Mitsuru Takenaka, Shinichi Takagi
    • Organizer
      39th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      San Diego, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxiallystrained Si MOSFETs2008

    • Author(s)
      Y.Zhao, M.Takenaka, S.Takagi
    • Organizer
      International Electron Device Meeting (IEDM)
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2008-12-15
    • Data Source
      KAKENHI-PROJECT-20246055
  • [Presentation] InAlAs選択酸化によるIII-V MOS界面構造の形成2008

    • Author(s)
      中川翔太, 横山正史, 市川磨, 秦雅彦, 田中雅明, 竹中充, 高木信一
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-19860024
  • [Presentation] Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO2 Interfacial Layers2008

    • Author(s)
      Y. Nakakita, R. Nakane, T. Sasada, H. Matsubara, M. Takenaka and S. Takagi
    • Organizer
      International Electron Device Meeting, pp. 877-880
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Electrical Characteristics of (110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2008

    • Author(s)
      Sanjeewa Dissanayake, Yusuke Shuto, Satoshi Sugahara, Mitsuru Takenaka, Shinichi Takagi
    • Organizer
      2008年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      於中部大学
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation2007

    • Author(s)
      S. Takagi, H. Matsubara, M. Nishikawa, T. Sasada, R. Nakane, S. Sugahara, M. Takenaka
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation2007

    • Author(s)
      S. Takagi, H. Matsubara, M. Nishikawa, T. Sasada, R. Nakane, S. Sugahara and M. Takenaka
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces-for Next Generation ULSI Process Integrations- (ISCSI-V)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2007-11-13
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Fabrication of(110)GOI Layers by Ge Condensation of SiGe/(110)SOI Structure and Application to pMOSFET Devices2007

    • Author(s)
      S. Dissanayake, S. Sugahara, M. Takenaka and S. Takagi
    • Organizer
      2nd International Conference on Industrial and Information Systems(ICIIS 2007)
    • Place of Presentation
      University of Peradeniya, Sri Lanka
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka and S. Takagi
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), pp. 233-234
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs2007

    • Author(s)
      S. Takagi, T. Uehara, S. Tanabe, H. Matsubara, R. Nakane, M. Takenaka and S. Sugahara
    • Organizer
      34th International Symposium on Compound Semiconductors (ISCS2007)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2007-10-16
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Carrier-Transport-Enhanced CMOS using New Channel Materials and Structures (invited)2007

    • Author(s)
      S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, K. Usuda, N. Hirashita, M. Takenaka and N. Sugiyama
    • Organizer
      International Semiconductor Device Research Symposium (ISDRS)
    • Place of Presentation
      Maryland, USA
    • Year and Date
      2007-12-13
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Fabrication of (110) GOI Layers by Ge Condensation of SiGe/ (110) SOI Structure and Application to pMOSFET Devices2007

    • Author(s)
      S. Dissanayake, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      2nd International Conference on Industrial and Information Systems (ICIIS 2007)
    • Place of Presentation
      Sri Lanka
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Evaluation of SiO2/GeO2/Ge MIS Interface Properties by Low Temperature Conductance Method2007

    • Author(s)
      H. Matsubara, H. Kumagai, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      Ext. Abs. SSDM
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Understanding and Control of Ge MIS Interface Properties (invited)2007

    • Author(s)
      S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Harada, T. Yamamoto, N. Sugiyama, M. Nishikawa, H. Kumagai, H. Matsubara, R. Nakane, M. Takenaka and S. Sugahara
    • Organizer
      4th International Symposium on Advanced Gate Stack Technology
    • Place of Presentation
      Dallas, USA
    • Year and Date
      2007-09-27
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETs2007

    • Author(s)
      O. Weber, T. Irisawa, T. Numata, M. Harada, N. Taoka, Y. Yamashita, T. Yamamoto, N. Sugiyama, M. Takenaka, S. Takagi
    • Organizer
      International Electron Device Meeting
    • Place of Presentation
      Washington DC., USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs2007

    • Author(s)
      S. Takagi, T. Uehara, S. Tanabe, H. Matsubara, R. Nakane, M. Takenaka, S. Sugahara
    • Organizer
      34th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Evaluation of SiO2/GeO2/Ge MlS Interface Properties by Low Temperature Conductance Method2007

    • Author(s)
      H. Matsubara, H. Kumagai, S. Sugahara and M. Takenaka and S. Takagi
    • Organizer
      International Conference on Solid State Devices and Materials(SSDM)
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka and S. Takagi
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces-for Next Generation ULSI Process Integrations- (ISCSI-V)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2007-11-14
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effects of Annealing on (110) GOI Layers Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      於北海道工業大学
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] 異種半導体集積CMOSおよびフォトニクス融合への展望

    • Author(s)
      竹中充
    • Organizer
      光産業技術振興協会第4回フォトニックデバイス・応用技術研究会
    • Place of Presentation
      上智大学(東京都千代田区)
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Waveguide InGaAs photodetector with Schottky barrier enhancement layer on III-V CMOS photonics platform

    • Author(s)
      Y. Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      Indium Phosphide and Related Materials
    • Place of Presentation
      Le Corum, Montpellier, France
    • Year and Date
      2014-05-11 – 2014-05-15
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates

    • Author(s)
      X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
    • Organizer
      Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
    • Place of Presentation
      Aula Prodi, Bologna, Italy
    • Year and Date
      2015-01-26 – 2015-01-28
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Surface orientation depdendence of electro-optic effects in InGaAsP for lateral pin-junction InGaAsP photonic-wire modulators

    • Author(s)
      Y. Ikku, M. Takenaka, and S. Takagi
    • Organizer
      Indium Phosphide and Related Materials
    • Place of Presentation
      Le Corum, Montpellier, France
    • Year and Date
      2014-05-11 – 2014-05-15
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Low-crosstalk 2 x 2 InGaAsP photonic-wire optical switches using III-V CMOS photonics platform

    • Author(s)
      Y. Ikku, M. Yokoyama, N. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      European Conference on Optical Communication
    • Place of Presentation
      the ExCeL centre, London, UK
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Ultra-small, low-crosstalk, electrically-driven InGaAsP photonic-wire optical switches on III-V CMOS photonics platform

    • Author(s)
      Y. Ikku, M.Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      Optical Fiber Communication Conference
    • Place of Presentation
      Moscone center, San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Performance enhancement technologies in III-V/Ge MOSFETS

    • Author(s)
      S. Takagi, R. Zhang, S.-H. Kim, M. Yokoyama, M. Takenaka
    • Organizer
      224th ECS Meeting
    • Place of Presentation
      The Hilton San Francisco Hotel, San Francisco, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Gate stack technologies for high mobility channel MOSFETs

    • Author(s)
      S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
    • Organizer
      2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory”
    • Place of Presentation
      Moscone West Convention Center, San Francisco, USA
    • Year and Date
      2015-04-06 – 2015-04-10
    • Invited
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] 異種半導体集積を用いたCMOSフォトニクス

    • Author(s)
      竹中充、高木信一
    • Organizer
      レーザー学会第34回年次大会
    • Place of Presentation
      北九州国際会議場(福岡県北九州市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform

    • Author(s)
      M. Kuramochi, M. Takenaka, Y. Ikku, and S. Takagi
    • Organizer
      Indium Phosphide and Related Materials
    • Place of Presentation
      Le Corum, Montpellier, France
    • Year and Date
      2014-05-11 – 2014-05-15
    • Data Source
      KAKENHI-PROJECT-26709022
  • [Presentation] Reduction in crosstalk of carrier-injection mach-zehnder interferometer optical switches by using III-V CMOS photonics platform

    • Author(s)
      Y. Ikku, M. Yokoyama, M. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      3rd International Symposium on Photonics and Electronics Convergence
    • Place of Presentation
      Eneos Hall, Meguro-ku, Tokyo
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] III-V/Ge CMOS Device Technologies for Future Logic LSIs

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      7th International SiGe Technology and Device Meeting (ISTDM)
    • Place of Presentation
      Swissotel Merchant Court, Singapore, Singapore
    • Year and Date
      2014-06-02 – 2014-06-04
    • Invited
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Waveguide InGaAs MSM photodetector for chip-scale optical interconnects on III-V CMOS photonics platform

    • Author(s)
      Y. Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      Asia Communications and Photonics Conference
    • Place of Presentation
      Beijing International Convention Center, Beijin, China
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Strained extremely-thin body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates

    • Author(s)
      S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      VLSI Symposium
    • Place of Presentation
      Rihga Royal Hotel Kyoto, Kyoto, Kyoto
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Electrical Properties of (110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Technique

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      2008年秋季応用物理学会
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Study of Thermal Annealing Effect on Smartcut Ge-on-Insulator Substrate

    • Author(s)
      Jian Kang, Xiao Yu, Mitsuru Takenaka, Shinichi Takagi
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26220605
  • [Presentation] II-V CMOSフォトニクス•プラットフォーム上導波路型InGaAs MSMフォトディテクタの作製

    • Author(s)
      程勇鵬, 一宮佑希, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates

    • Author(s)
      X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] III-V/Ge CMOSフォトニクス実現に向けたデバイス技術

    • Author(s)
      竹中 充,高木信一
    • Organizer
      電気化学会電子材料委員会第77回半導体・集積回路技術シンポジウム
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] nGaAsP細線導波路光スイッチに向けたZn拡散によるp+InGaAsPの形成

    • Author(s)
      一宮佑希,野口宗隆,横山正史,市川 磨,長田剛規,秦 雅彦,竹中 充,高木信一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都府京田辺市)
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates

    • Author(s)
      X. Yu, R. Zhang, J. Kang, T. Osada, M. Hata, M. Takenaka and S. Takagi
    • Organizer
      21st International Symposium on VLSI Technology, Systems and Applications (2014 VLSI-TSA)
    • Place of Presentation
      Ambassador Hotel, Hsinchu, Taiwan
    • Year and Date
      2014-04-28 – 2014-04-30
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Heterogeneous integration for CMOS photonics

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      3rd International Symposium on Photonics and Electronics Convergence
    • Place of Presentation
      Eneos Hall, Meguro-ku, Tokyo
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] プラスマ後酸化法による1 nm EOT Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFET

    • Author(s)
      張睿、岩崎敬志、田岡紀之、竹中充、高木信一
    • Organizer
      応用物理学会シリコンテクノロジー分科会第139回研究集会「VLSIシンポジウム特集 (先端CMOSデバイス・プロセス技術)」
    • Place of Presentation
      東京
    • Invited
    • Data Source
      KAKENHI-PROJECT-22000011
  • [Presentation] High performance extremely-thin body InAs-On-Insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology

    • Author(s)
      S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      VLSI Symposium
    • Place of Presentation
      Rihga Royal Hotel Kyoto, Kyoto, Kyoto
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs

    • Author(s)
      S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
    • Organizer
      Indium Phosphide and Related Materials
    • Place of Presentation
      Kobe Convention Center, Kobe, Hyogo
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs

    • Author(s)
      S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    • Organizer
      43rd European Solid-State Device Research Conference (ESSDERC’13)
    • Place of Presentation
      Marriott Bucharest Grand Hotel, Bucharest, Romaina
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] InGaAsP細線導波路光スイッチにおける低クロストーク動作

    • Author(s)
      一宮佑希, 横山正史, 野口宗隆, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] III-V/Ge device engineering for CMOS photonics

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      International Conference on Processing & Manufacturing of Advanced Materials
    • Place of Presentation
      Rio Hotel, Las Vegas, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] High mobility CMOS technologies using III-V/Ge channels

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference
    • Place of Presentation
      National Cheng Kung University, Tainan, Taiwan
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] High performance sub-20-nm-channel-length extremely-thin body InAs-on-Insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability

    • Author(s)
      S.-H. Kim, M. Yokoyama, R. Nakane, M. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
    • Organizer
      International Electron Devices Meeting
    • Place of Presentation
      Washington Hilton, Washington D. C., USA
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance

    • Author(s)
      K. Tanaka, R. Zhang, M. Takenaka and S. Takagi
    • Organizer
      46th International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      つくば国際会議場(茨城県つくば市)
    • Year and Date
      2014-09-09 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] Material Challenges and Opportunities in Ge/III-V channel MOSFETs

    • Author(s)
      S. Takagi, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang and M. Takenaka
    • Organizer
      226th Fall meeting of the Electrochemical Society, P3 - High Purity and High Mobility Semiconductors 13
    • Place of Presentation
      Moon Palace Resort, Cancun, Mexico
    • Year and Date
      2014-10-05 – 2014-10-10
    • Invited
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] III-V/Ge Channel MOS Device Technologies in Nano CMOS era

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      27th International Microprocesses and Nanotechnology Conference (MNC)
    • Place of Presentation
      ヒルトン福岡シーホーク(福岡県福岡市)
    • Year and Date
      2014-11-04 – 2014-11-07
    • Data Source
      KAKENHI-PROJECT-26249038
  • [Presentation] III-V/Ge MOS transistor technologies for future ULSI

    • Author(s)
      Shinichi Takagi and Mitsuru Takenaka
    • Organizer
      International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
    • Place of Presentation
      Grand Hotel de Paris, Grenoble, France
    • Invited
    • Data Source
      KAKENHI-PROJECT-22686034
  • [Presentation] 量子井戸インターミキシグを用いた III-V CMOSフォトニクス用マルチバンドギャップ貼り合せ基板の作製

    • Author(s)
      倉持美沙,竹中充,一宮佑希,高木信一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-22686034
  • 1.  TAKAGI Shinichi (30372402)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 259 results
  • 2.  ZAIMA Shigeaki (70158947)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 1 results
  • 3.  NAKATSUKA Osamu (20334998)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  SUGAHARA Satoshi (40282842)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 29 results
  • 5.  SAKASHITA Mitsuo (30225792)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 6.  TANAKA Nobuo (40126876)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  TAKEUCHI Wakana (90569386)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  KUROSAWA Masashi (40715439)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  齋藤 晃 (50292280)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  HO CHONG PEI
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 26 results
  • 11.  杉山 正和
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 12.  中野 義昭
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 13.  CHENG Zhenzhou
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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