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NISHINO Shigehiro  西野 茂弘

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… Alternative Names

西野 茂弘  ニシノ シゲヒロ

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Researcher Number 30089122
External Links
Affiliation (based on the past Project Information) *help 2001 – 2004: 京都工芸繊維大学, 工芸学部, 教授
1997 – 1998: 京都工芸繊維大学, 工芸学部, 教授
1995: 京都工芸繊維大学, 工芸学部, 教授
1988 – 1992: 京都工芸繊維大学, 工芸学部, 助教授
1986 – 1987: 京都工芸繊維大学, 工業短期大学部, 助教授
Review Section/Research Field
Principal Investigator
Applied materials / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering
Except Principal Investigator
電子材料工学
Keywords
Principal Investigator
3C-SiC / 立方晶SiC / 結晶成長 / プラズマCVD / シリコンカーバイド / 単結晶SiC / 3CーSiC / ヘテロエピタキシ- / 昇華法 / silicon carbide … More / 減圧CVD / ヘテロエピタキシャル / SiC on Si / エピタキシヤル成長 / 低温成長 / 結晶多形 / 近接法 / SiC / ヘテロエピタキシャル成長 / 選択成長 / CVD法 / 気相成長 / 横方向成長 / cubic SiC / vapor phase growth / CVD / βーSiC / 常結晶SiC / ラジカルビ-ム / バルク成長 / 炭化珪素 / 6H-SiC / 多形制御 / バクル成長 / β-SiC / Si / 光CVD / Plsama CVD / Photo-CVD, / LPCVD / Cubic sic / Low Temperature Growth / Heteroepitaxy, / Crystal Growth, / エピタキシャル成長 / 6H-SiCエピタキシャル層 / 昇華エピタキシー / SiCデバイス / SiC薄膜 / 昇華エピアキシャル成長 / epitaxial growth / sublimation method / 6H-SiC epitaxial layer / closed space technique / sublimation epitaxy / SiC device / SiC think film / チャネルエピタキシー / エアーブリッジ構造 / ファセット成長 / ELO / 立方晶 SiC / EL0 / channel epitaxy / heteroepitaxial growth / selective growth / CVD method / マイクロチャネルエピタキシー / 立法晶SiC / 単結晶薄膜成長 / シリコンカーバイト / heteroepitaxy / microchanel epitaxy / selective epitaxy … More
Except Principal Investigator
MBE法 / 光CVD / アルミナ膜 / 格子整合 / ZnSSe / Nアクセプタ / Liアクセプタ / 高量子収率 / SiMIS構造 / GaAsMIS構造 / 低界面準位密度 / ワイドギャップ材料 / ヘテロエピタキシャル成長 / 半導体混晶 / ZnSSe混晶 / GaAs基板 / 窒素ドーピング / 短波長半導体レーザ材料 / ZnSSe mixed crystal / Lattice-matching / GaAs substrate / Nitrogen doping / MBE / 光CVD法 / 堆積速度 / 誘電損失 / 有機金属原料 / 誘電特性 / 屈折率 / Al_2O_3 films / Photo-CVD method / Deposition rate / Dielectric loss factor Less
  • Research Projects

    (15 results)
  • Research Products

    (35 results)
  • Co-Researchers

    (4 People)
  •  Crystal Growth of Free Standing 3C-SiC Using Air-Bridge StructurePrincipal Investigator

    • Principal Investigator
      NISHINO Shigehiro
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  Crystal growth of 3C-SiC on Si substrates by channel epitaxy methodPrincipal Investigator

    • Principal Investigator
      NISHINO Shigehiro
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  Epitaxial Growth of High Quality SiC by Sublimation Close Space Technique with High Growtn RatePrincipal Investigator

    • Principal Investigator
      NISHINO Shigehiro
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  昇華法による立方晶SiCインゴットの単結晶成長Principal Investigator

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  バルク状単結晶SiCの育成と結晶多形の制御Principal Investigator

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto Institute of Technology
  •  光CVD法によるアルミナ絶縁膜の低温堆積の研究

    • Principal Investigator
      松村 信男
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  ラジカムビ-ル励起による半導体SiCの結晶成長Principal Investigator

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto Institute of Technology
  •  単結晶SiCのプラズマCVDにおける励起種の表面反応の研究Principal Investigator

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  MBE法による青色発光用格子整合混晶へのアクセプタ添加の研究

    • Principal Investigator
      更家 淳司
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto Institute of Technology
  •  単結晶SiCのプラズマCVDにおける励起種の表面反応の研究Principal Investigator

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  Low Temperature Growth of Semiconductor Sic by Photo-Plasma Double ExcitationPrincipal Investigator

    • Principal Investigator
      NISHINO Shigehiro
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto Institute of Technology
  •  単結晶SiCのプラズマCVDにおける励起種の表面反応の研究Principal Investigator

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  Low temperature deposition of Al_2O_3 insulating thin films by photo-CVD

    • Principal Investigator
      SARAIE Junji
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto Institute of Technology
  •  短波長発光用II-VI族半導体混晶のMBE成長

    • Principal Investigator
      更家 淳司
    • Project Period (FY)
      1987
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  MBE growth of a semiconductin gmaterial for blue light lasers

    • Principal Investigator
      SARAIE Junji
    • Project Period (FY)
      1986 – 1987
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto Institute of Technology

All 2005 2004 2003 2002 2001

All Journal Article

  • [Journal Article] Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition2005

    • Author(s)
      T.Nishiguchi, Y.Mukai, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science forum 483-485

      Pages: 221-224

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Micorstuructures in the Pendio epitaxial layer of 3C-SiC on Si substrate2005

    • Author(s)
      A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 221-224

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method2005

    • Author(s)
      S.Sugishita, A.shoji, Y.Mukai, T.Nishiguchi, K.Michikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 177-180

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Pendio epitaxial growth of 3C-SiC on Si subastrates2005

    • Author(s)
      A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 221-224

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Later Microfabrication of Si column covered with SiC film for electronn emitter2005

    • Author(s)
      T.Nakata, Y.Ohshirao, A.Shoji, Y.Okui, S.Ohshima, Y.Hayashi, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 237-240

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrates by hetero-epitaxial CVD method2005

    • Author(s)
      T.Isshiki, M.Nakamura, T.Nishiguchi, K.Nishio, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 185-188

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Suppression of the twin formation in CVD growth of (111)3C-SiC on (110)Si substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 193-196

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Later An in-situ post growth annnealing process for the improvement of 4H-SiC/SiO2 MOS interface prepared by CVD using TEOS, and its2005

    • Author(s)
      K.Kumaresan, H.Furuichi, K.Taguchi, S.Yukimoto, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 681-684

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Effect of the substrate off-axis on the suppression of twin formation in CVD growth of (111)3C-SiC on (110)Si substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 193-196

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Microstructures in the Pendio epitaxial layer of 3C-SiC on Si substrate2005

    • Author(s)
      A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 221-224

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Later Microfabrication of Si column covered with SiC film for electron emitter2005

    • Author(s)
      T.Nakata, Y.Ohshirao, A.Shoji, Y.Okui, S.Ohshima, Y.Hayashi, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 237-240

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate2005

    • Author(s)
      M.Nakamura, T.Isshiki, T.Nishiguchi, K.Nishio, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 181-184

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrates by hetero-epitaxial CVD method2005

    • Author(s)
      T.Isshiki, M.Nakamura, T.Nishiguchi, K.Nishino, S.Ohshima, S.Nishio
    • Journal Title

      Materials Science Forum 483-485

      Pages: 185-188

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Infuence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrates by hetero-epitaxial CVD method2005

    • Author(s)
      T.Isshiki, M.Nakamura, T.Nishiguchi, K.Nishio, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 185-188

    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 181-184

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Effect of the substrate off-axis on the suppression of twin formation in CVD growth of (111) 3C-SiC on (110) Si substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 193-196

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method2005

    • Author(s)
      S.Sugishita, A.Shoji, Y.Mukai, T.Nishiguchi, K.Michikami, T.Isshiki, S.Ohshima, S.nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 177-180

    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Pendio epitaxial growth of 3C-SiC on Si substrates2005

    • Author(s)
      A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 221-224

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Later An in-situ post growth annnealing process for the improvement of 4H-SiC/SiO2 MOS interface prepared by CVD using TEOS, and its characteristic study2005

    • Author(s)
      K.Kumaresan, H.Furuichi, K.Taguchi, S.Yukimoto, S.Nishino
    • Journal Title

      Mater.Sci.Forum 353-356

      Pages: 681-684

    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] An in-situ post growth annealing process for the improvement of 4H-SiC/SiO2 MO interface prepared by CVD using TEOS, and its characteristic study2005

    • Author(s)
      K.Kumaresan, H.Furuichi, K.Taguchi, S.Yukimoto, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 681-684

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Suppression of the twin formation in CVD growth of (111)3C-SiC on (110) Si substrate2005

    • Author(s)
      T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 483-485

      Pages: 193-196

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Lateral epitaxial overgrowth and reduction in defect density of 3C-SiC on patterned Si2004

    • Author(s)
      A.R.Bushroa, C.Jacob, H.Saijo, S.Nishino
    • Journal Title

      J.Crystal Growth 271

      Pages: 200-206

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Structural Analysis of (211)3C-SiC on (211)Si Substrates Grown by Chemical Vapor Deposition2004

    • Author(s)
      T.Nishiguchi, Y.Mukai, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
    • Journal Title

      Mater.Sci.Forum 457-460

      Pages: 285-288

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Raman microprobe mapping of residual microstresses in 3C-SiC film epitaxial lateral growth2004

    • Author(s)
      C.J.Lee, G.Pezzottie, Y.Okui, S.Nishino
    • Journal Title

      Applied Surface Science 228

      Pages: 10-16

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] Pendio Epitaxial Growth of 3C-SiC on Si Substrates2004

    • Author(s)
      A.Shoji, Y.Okui, T.Nishiguchi, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 457-460

      Pages: 257-260

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • [Journal Article] Pendio Epitaxial Growth of 3C-SiC on Si Substrates2004

    • Author(s)
      A.Shoji, Y.Okui, T.Nishiguchi, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum Vols. 457-460

      Pages: 257-260

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • [Journal Article] Raman microprobe mapping of residual microstresses in 3C-SiC film epitaxial lateral2004

    • Author(s)
      C.J.Lee, G.Pezzottie, Y.Okui, S.Nishino
    • Journal Title

      Applied Surface Science 228

      Pages: 10-16

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360010
  • [Journal Article] CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semiconductors2003

    • Author(s)
      T.Nishiguchi, Y.Mukai, S.Ohshima, S.Nishino
    • Journal Title

      Materials phys. stat. sol 【○!C】0

      Pages: 2585-2588

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • [Journal Article] CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semiconductors2003

    • Author(s)
      T.Nishiguchi, Y.Mukai, S.Ohshima, S.Nishino
    • Journal Title

      phys.stat.sol. (c) 0

      Pages: 2585-2588

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • [Journal Article] Lateral over-growth of 3C-SiC on patterned Si(111) substrates2002

    • Author(s)
      S.Nishino, C.Jacob, Y.Okui, S.Ohshima, Y.Masuda
    • Journal Title

      J.Crystal Growth

      Pages: 1250-1253

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • [Journal Article] Selective Epitaxial Growth of pyramidal 3C-SiC on patterned Si substrate"2002

    • Author(s)
      Y.Okui, C.Jacob, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum vols 389-393

      Pages: 331-334

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • [Journal Article] Lateral over-growth of 3C-SiC on patterned Si(111) substrates2002

    • Author(s)
      S.Nishino, C.Jacob, Y.Okui, S.Ohshima, Y.Masuda
    • Journal Title

      J. Crystal Growth

      Pages: 1250-1253

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • [Journal Article] Selective Epitaxial Growth of pyramidal 3C-SiC on patterned Si substrate2002

    • Author(s)
      Y.Okui, C.Jacob, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 389-393

      Pages: 331-334

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • [Journal Article] Low temperature selective and lateral epitaxial growth of silicon carbide on pattgerened silicon substrates2001

    • Author(s)
      C.Chacko, P.Pirouz, S.Nishino
    • Journal Title

      Materials Science Forum 353-356

      Pages: 127-130

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • [Journal Article] Low temperature selective and lateral epitaxial growth of silicon carbide on patterned silicon substrates2001

    • Author(s)
      C, Chacko, P.Pirouz, S.Nishino
    • Journal Title

      Materials Science Forum 353-356

      Pages: 127-130

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450012
  • 1.  SARAIE Junnji (90026154)
    # of Collaborated Projects: 12 results
    # of Collaborated Products: 0 results
  • 2.  MATSUMURA Nobuo (60107357)
    # of Collaborated Projects: 12 results
    # of Collaborated Products: 0 results
  • 3.  HAYASHI Yasuaki (30243116)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 2 results
  • 4.  SHIRAFUJI Tatsuru (10235757)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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