NISHINO Shigehiro 西野茂弘

… Alternative Names

西野茂弘ニシノシゲヒロ

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Researcher Number	30089122
External Links
Affiliation (based on the past Project Information) *help	2001 – 2004: 京都工芸繊維大学, 工芸学部, 教授 1997 – 1998: 京都工芸繊維大学, 工芸学部, 教授 1995: 京都工芸繊維大学, 工芸学部, 教授 1988 – 1992: 京都工芸繊維大学, 工芸学部, 助教授 1986 – 1987: 京都工芸繊維大学, 工業短期大学部, 助教授
Review Section/Research Field	Principal Investigator Applied materials / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator 電子材料工学
Keywords	Principal Investigator 3C-SiC / 立方晶SiC / 結晶成長 / プラズマCVD / シリコンカーバイド / 単結晶SiC / 3CーSiC / ヘテロエピタキシ- / 昇華法 / silicon carbide … More / 減圧CVD / ヘテロエピタキシャル / SiC on Si / エピタキシヤル成長 / 低温成長 / 結晶多形 / 近接法 / SiC / ヘテロエピタキシャル成長 / 選択成長 / CVD法 / 気相成長 / 横方向成長 / cubic SiC / vapor phase growth / CVD / βーSiC / 常結晶SiC / ラジカルビ-ム / バルク成長 / 炭化珪素 / 6H-SiC / 多形制御 / バクル成長 / β-SiC / Si / 光CVD / Plsama CVD / Photo-CVD, / LPCVD / Cubic sic / Low Temperature Growth / Heteroepitaxy, / Crystal Growth, / エピタキシャル成長 / 6H-SiCエピタキシャル層 / 昇華エピタキシー / SiCデバイス / SiC薄膜 / 昇華エピアキシャル成長 / epitaxial growth / sublimation method / 6H-SiC epitaxial layer / closed space technique / sublimation epitaxy / SiC device / SiC think film / チャネルエピタキシー / エアーブリッジ構造 / ファセット成長 / ELO / 立方晶 SiC / EL0 / channel epitaxy / heteroepitaxial growth / selective growth / CVD method / マイクロチャネルエピタキシー / 立法晶SiC / 単結晶薄膜成長 / シリコンカーバイト / heteroepitaxy / microchanel epitaxy / selective epitaxy … More Except Principal Investigator MBE法 / 光CVD / アルミナ膜 / 格子整合 / ZnSSe / Nアクセプタ / Liアクセプタ / 高量子収率 / SiMIS構造 / GaAsMIS構造 / 低界面準位密度 / ワイドギャップ材料 / ヘテロエピタキシャル成長 / 半導体混晶 / ZnSSe混晶 / GaAs基板 / 窒素ドーピング / 短波長半導体レーザ材料 / ZnSSe mixed crystal / Lattice-matching / GaAs substrate / Nitrogen doping / MBE / 光CVD法 / 堆積速度 / 誘電損失 / 有機金属原料 / 誘電特性 / 屈折率 / Al_2O_3 films / Photo-CVD method / Deposition rate / Dielectric loss factor Less

Crystal Growth of Free Standing 3C-SiC Using Air-Bridge StructurePrincipal Investigator
- Principal Investigator
  
  NISHINO Shigehiro
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto Institute of Technology
Crystal growth of 3C-SiC on Si substrates by channel epitaxy methodPrincipal Investigator
- Principal Investigator
  
  NISHINO Shigehiro
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto Institute of Technology
Epitaxial Growth of High Quality SiC by Sublimation Close Space Technique with High Growtn RatePrincipal Investigator
- Principal Investigator
  
  NISHINO Shigehiro
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto Institute of Technology
昇華法による立方晶SiCインゴットの単結晶成長Principal Investigator
- Principal Investigator
  
  西野茂弘
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto Institute of Technology
バルク状単結晶SiCの育成と結晶多形の制御Principal Investigator
- Principal Investigator
  
  西野茂弘
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  Kyoto Institute of Technology
光CVD法によるアルミナ絶縁膜の低温堆積の研究
- Principal Investigator
  
  松村信男
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto Institute of Technology
ラジカムビ-ル励起による半導体SiCの結晶成長Principal Investigator
- Principal Investigator
  
  西野茂弘
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  Kyoto Institute of Technology
単結晶SiCのプラズマCVDにおける励起種の表面反応の研究Principal Investigator
- Principal Investigator
  
  西野茂弘
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto Institute of Technology
MBE法による青色発光用格子整合混晶へのアクセプタ添加の研究
- Principal Investigator
  
  更家淳司
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Kyoto Institute of Technology
単結晶SiCのプラズマCVDにおける励起種の表面反応の研究Principal Investigator
- Principal Investigator
  
  西野茂弘
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto Institute of Technology
Low Temperature Growth of Semiconductor Sic by Photo-Plasma Double ExcitationPrincipal Investigator
- Principal Investigator
  
  NISHINO Shigehiro
- Project Period (FY)
  1989 – 1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  Kyoto Institute of Technology
単結晶SiCのプラズマCVDにおける励起種の表面反応の研究Principal Investigator
- Principal Investigator
  
  西野茂弘
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto Institute of Technology
Low temperature deposition of Al_2O_3 insulating thin films by photo-CVD
- Principal Investigator
  
  SARAIE Junji
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Kyoto Institute of Technology
短波長発光用II-VI族半導体混晶のMBE成長
- Principal Investigator
  
  更家淳司
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto Institute of Technology
MBE growth of a semiconductin gmaterial for blue light lasers
- Principal Investigator
  
  SARAIE Junji
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Kyoto Institute of Technology

All 2005 2004 2003 2002 2001

All Journal Article

[Journal Article] Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition2005
- Author(s)
  T.Nishiguchi, Y.Mukai, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science forum 483-485
  
  Pages: 221-224
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Micorstuructures in the Pendio epitaxial layer of 3C-SiC on Si substrate2005
- Author(s)
  A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Mater.Sci.Forum 353-356
  
  Pages: 221-224
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method2005
- Author(s)
  S.Sugishita, A.shoji, Y.Mukai, T.Nishiguchi, K.Michikami, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 177-180
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Pendio epitaxial growth of 3C-SiC on Si subastrates2005
- Author(s)
  A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 221-224
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Later Microfabrication of Si column covered with SiC film for electronn emitter2005
- Author(s)
  T.Nakata, Y.Ohshirao, A.Shoji, Y.Okui, S.Ohshima, Y.Hayashi, S.Nishino
- Journal Title
  
  Mater.Sci.Forum 353-356
  
  Pages: 237-240
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrates by hetero-epitaxial CVD method2005
- Author(s)
  T.Isshiki, M.Nakamura, T.Nishiguchi, K.Nishio, S.Ohshima, S.Nishino
- Journal Title
  
  Mater.Sci.Forum 353-356
  
  Pages: 185-188
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Suppression of the twin formation in CVD growth of (111)3C-SiC on (110)Si substrate2005
- Author(s)
  T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Mater.Sci.Forum 353-356
  
  Pages: 193-196
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Later An in-situ post growth annnealing process for the improvement of 4H-SiC/SiO2 MOS interface prepared by CVD using TEOS, and its2005
- Author(s)
  K.Kumaresan, H.Furuichi, K.Taguchi, S.Yukimoto, S.Nishino
- Journal Title
  
  Mater.Sci.Forum 353-356
  
  Pages: 681-684
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Effect of the substrate off-axis on the suppression of twin formation in CVD growth of (111)3C-SiC on (110)Si substrate2005
- Author(s)
  T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 193-196
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Microstructures in the Pendio epitaxial layer of 3C-SiC on Si substrate2005
- Author(s)
  A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 221-224
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Later Microfabrication of Si column covered with SiC film for electron emitter2005
- Author(s)
  T.Nakata, Y.Ohshirao, A.Shoji, Y.Okui, S.Ohshima, Y.Hayashi, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 237-240
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate2005
- Author(s)
  M.Nakamura, T.Isshiki, T.Nishiguchi, K.Nishio, S.Ohshima, S.Nishino
- Journal Title
  
  Mater.Sci.Forum 353-356
  
  Pages: 181-184
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrates by hetero-epitaxial CVD method2005
- Author(s)
  T.Isshiki, M.Nakamura, T.Nishiguchi, K.Nishino, S.Ohshima, S.Nishio
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 185-188
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Infuence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrates by hetero-epitaxial CVD method2005
- Author(s)
  T.Isshiki, M.Nakamura, T.Nishiguchi, K.Nishio, S.Ohshima, S.Nishino
- Journal Title
  
  Mater.Sci.Forum 353-356
  
  Pages: 185-188
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate2005
- Author(s)
  T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 181-184
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Effect of the substrate off-axis on the suppression of twin formation in CVD growth of (111) 3C-SiC on (110) Si substrate2005
- Author(s)
  T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 193-196
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method2005
- Author(s)
  S.Sugishita, A.Shoji, Y.Mukai, T.Nishiguchi, K.Michikami, T.Isshiki, S.Ohshima, S.nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 177-180
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Pendio epitaxial growth of 3C-SiC on Si substrates2005
- Author(s)
  A.Shoji, M.Nakamura, K.Mitikami, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 221-224
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Later An in-situ post growth annnealing process for the improvement of 4H-SiC/SiO2 MOS interface prepared by CVD using TEOS, and its characteristic study2005
- Author(s)
  K.Kumaresan, H.Furuichi, K.Taguchi, S.Yukimoto, S.Nishino
- Journal Title
  
  Mater.Sci.Forum 353-356
  
  Pages: 681-684
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] An in-situ post growth annealing process for the improvement of 4H-SiC/SiO2 MO interface prepared by CVD using TEOS, and its characteristic study2005
- Author(s)
  K.Kumaresan, H.Furuichi, K.Taguchi, S.Yukimoto, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 681-684
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Suppression of the twin formation in CVD growth of (111)3C-SiC on (110) Si substrate2005
- Author(s)
  T.Nishiguchi, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 193-196
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Lateral epitaxial overgrowth and reduction in defect density of 3C-SiC on patterned Si2004
- Author(s)
  A.R.Bushroa, C.Jacob, H.Saijo, S.Nishino
- Journal Title
  
  J.Crystal Growth 271
  
  Pages: 200-206
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Structural Analysis of (211)3C-SiC on (211)Si Substrates Grown by Chemical Vapor Deposition2004
- Author(s)
  T.Nishiguchi, Y.Mukai, M.Nakamura, K.Nishio, T.Isshiki, S.Ohshima, S.Nishino
- Journal Title
  
  Mater.Sci.Forum 457-460
  
  Pages: 285-288
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Raman microprobe mapping of residual microstresses in 3C-SiC film epitaxial lateral growth2004
- Author(s)
  C.J.Lee, G.Pezzottie, Y.Okui, S.Nishino
- Journal Title
  
  Applied Surface Science 228
  
  Pages: 10-16
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] Pendio Epitaxial Growth of 3C-SiC on Si Substrates2004
- Author(s)
  A.Shoji, Y.Okui, T.Nishiguchi, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 457-460
  
  Pages: 257-260
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450012
[Journal Article] Pendio Epitaxial Growth of 3C-SiC on Si Substrates2004
- Author(s)
  A.Shoji, Y.Okui, T.Nishiguchi, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum Vols. 457-460
  
  Pages: 257-260
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450012
[Journal Article] Raman microprobe mapping of residual microstresses in 3C-SiC film epitaxial lateral2004
- Author(s)
  C.J.Lee, G.Pezzottie, Y.Okui, S.Nishino
- Journal Title
  
  Applied Surface Science 228
  
  Pages: 10-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360010
[Journal Article] CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semiconductors2003
- Author(s)
  T.Nishiguchi, Y.Mukai, S.Ohshima, S.Nishino
- Journal Title
  
  Materials phys. stat. sol 【○!C】0
  
  Pages: 2585-2588
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450012
[Journal Article] CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semiconductors2003
- Author(s)
  T.Nishiguchi, Y.Mukai, S.Ohshima, S.Nishino
- Journal Title
  
  phys.stat.sol. (c) 0
  
  Pages: 2585-2588
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450012
[Journal Article] Lateral over-growth of 3C-SiC on patterned Si(111) substrates2002
- Author(s)
  S.Nishino, C.Jacob, Y.Okui, S.Ohshima, Y.Masuda
- Journal Title
  
  J.Crystal Growth
  
  Pages: 1250-1253
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450012
[Journal Article] Selective Epitaxial Growth of pyramidal 3C-SiC on patterned Si substrate"2002
- Author(s)
  Y.Okui, C.Jacob, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum vols 389-393
  
  Pages: 331-334
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450012
[Journal Article] Lateral over-growth of 3C-SiC on patterned Si(111) substrates2002
- Author(s)
  S.Nishino, C.Jacob, Y.Okui, S.Ohshima, Y.Masuda
- Journal Title
  
  J. Crystal Growth
  
  Pages: 1250-1253
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450012
[Journal Article] Selective Epitaxial Growth of pyramidal 3C-SiC on patterned Si substrate2002
- Author(s)
  Y.Okui, C.Jacob, S.Ohshima, S.Nishino
- Journal Title
  
  Materials Science Forum 389-393
  
  Pages: 331-334
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450012
[Journal Article] Low temperature selective and lateral epitaxial growth of silicon carbide on pattgerened silicon substrates2001
- Author(s)
  C.Chacko, P.Pirouz, S.Nishino
- Journal Title
  
  Materials Science Forum 353-356
  
  Pages: 127-130
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450012
[Journal Article] Low temperature selective and lateral epitaxial growth of silicon carbide on patterned silicon substrates2001
- Author(s)
  C, Chacko, P.Pirouz, S.Nishino
- Journal Title
  
  Materials Science Forum 353-356
  
  Pages: 127-130
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450012

1. SARAIE Junnji (90026154)

# of Collaborated Projects: 12 results

# of Collaborated Products: 0 results
2. MATSUMURA Nobuo (60107357)

# of Collaborated Projects: 12 results

# of Collaborated Products: 0 results
3. HAYASHI Yasuaki (30243116)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
4. SHIRAFUJI Tatsuru (10235757)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

NISHINO Shigehiro 西野 茂弘

西野 茂弘 ニシノ シゲヒロ

Research Projects

Research Products

Co-Researchers

Crystal Growth of Free Standing 3C-SiC Using Air-Bridge StructurePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Crystal growth of 3C-SiC on Si substrates by channel epitaxy methodPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Epitaxial Growth of High Quality SiC by Sublimation Close Space Technique with High Growtn RatePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

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昇華法による立方晶SiCインゴットの単結晶成長Principal Investigator

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バルク状単結晶SiCの育成と結晶多形の制御Principal Investigator

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光CVD法によるアルミナ絶縁膜の低温堆積の研究

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ラジカムビ-ル励起による半導体SiCの結晶成長Principal Investigator

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単結晶SiCのプラズマCVDにおける励起種の表面反応の研究Principal Investigator

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MBE法による青色発光用格子整合混晶へのアクセプタ添加の研究

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単結晶SiCのプラズマCVDにおける励起種の表面反応の研究Principal Investigator

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Low Temperature Growth of Semiconductor Sic by Photo-Plasma Double ExcitationPrincipal Investigator

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単結晶SiCのプラズマCVDにおける励起種の表面反応の研究Principal Investigator

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Low temperature deposition of Al_2O_3 insulating thin films by photo-CVD

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短波長発光用II-VI族半導体混晶のMBE成長

NISHINO Shigehiro 西野茂弘

西野茂弘ニシノシゲヒロ