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Akazawa Masamichi  赤澤 正道

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… Alternative Names

AKAZAWA Masamichi  赤澤 正道

赤沢 正道  アカザワ マサミチ

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Researcher Number 30212400
Other IDs
External Links
Affiliation (Current) 2025: 北海道大学, 量子集積エレクトロニクス研究センター, 准教授
Affiliation (based on the past Project Information) *help 2023 – 2024: 北海道大学, 量子集積エレクトロニクス研究センター, 准教授
2010 – 2020: 北海道大学, 量子集積エレクトロニクス研究センター, 准教授
2007 – 2008: Research Center for Integrated Quantum Electronics, 量子集積エレクトロニクス研究センター, Associate Professor
2001 – 2006: 北海道大学, 量子集積エレクトロニクス研究センター, 助教授
2002: 北海道大学, 量子エレクトロニクス研究センター, 助教授 … More
2002: 北海道大学, 量子集積エレクトニクス研究センター, 助教授
2001 – 2002: 北海道大学, 大学院・工学研究科, 助教授
1998 – 1999: Grad.School of Eng., Hokkaido Univ., Ass.Pro., 工学研究科, 助教授
1997 – 1999: Hokkaido Univ., Grad.School of Eng.Assoc.Prof., 大学院・工学研究科, 助教授
1998: 北海道大学, 大学院工学研究科, 助教授
1997: Hokkaido Univ., Grad.School of Eng.Assoc.Prof.
1995 – 1996: Hokkaido University, Faculty of Engineering, Associate Professor, 工学部, 助教授
1993 – 1994: Hokkaido University Faculty of Engineering, Assistant, 工学部・電気工学科, 助手
1989 – 1994: Fac.of Engineering, Hokkaido University, Research Associate, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
電子デバイス・機器工学 / Basic Section 21060:Electron device and electronic equipment-related / Thin film/Surface and interfacial physical properties / Electron device/Electronic equipment / 電子材料工学 / Thin film/Surface and interfacial physical properties / Electronic materials/Electric materials
Except Principal Investigator
Electronic materials/Electric materials / 電子材料工学 / 電子デバイス・機器工学 … More / Thin film/Surface and interfacial physical properties / Basic Section 21050:Electric and electronic materials-related / Science and Engineering / Applied materials science/Crystal engineering / Electron device/Electronic equipment / 電力工学・電気機器工学 / 極微細構造工学 / 表面界面物性 / Electronic materials/Electric materials / Communication/Network engineering Less
Keywords
Principal Investigator
GaAs / 界面準位 / 単電子 / InGaAs / MOS構造 / TDS / 界面制御 / MIS構造 / 窒化インジウムアルミニウム / InAlN … More / デバイス / MIS / 光電気化学エッチング / 欠陥準位 / MOSFET / アルミナ / SiO2 / 二酸化シリコン / MOS / emitter / surface plasmon-plariton / InAs / metal hole array / metal mesh / THz / LT-GaAs / エミッター / 表面プラズモン / インジウム砒素 / ガリウム砒素 / 金属開口配列 / 金属メッシュ / テラヘルツ / Neuron / Hopfield Network / Boltzmann Machine / Neural Network / Single-Electron Tunneling / ホップフィールドネットワーク / ボルツマンマシン / ニューロン / ニューラルネットワーク / MIS structure / Interface State / Inp / solid state TWA / 磁性薄膜 / ヘテロ界面 / InP / 固体進行波素子 / 表面不活性化 / フェルミ準位ピンニング / 窒化物混晶 / Al2O3 / ピンニング / 界面 / 表面 / LSI / 断熱論理回路 / 可逆計算デバイス / 量子極限 / 準静的 / 断熱的 / 集積回路 / 消費電力 / 可逆的 / アーキテクチャ / 回路設計 / 加算器 / BDD / 二分決定グラフ / ボルテックス / メモリー / MIM / SET / 回路 / MBE / MISFET … More
Except Principal Investigator
界面制御 / 化合物半導体 / 界面準位 / InGaAs / interface control / ショットキー障壁 / フォトルミネセンス / GaAs / Schottky barrier / 量子ドット / Photoluminescence / 半導体 / MBE / HEMT / C-V / MIS / 表面不活性化 / MMIC / 集積回路 / 窒化物半導体 / Fermi level pinning / HFET / Al_2O_3 / フェルミ準位ピンニング / 単電子回路 / InP / BDD / 論理回路 / シングルエレクトロン / 単電子 / ショットキーゲート / electrochemical process / indium phosphide / 電気化学プロセス / インジウムリン / InAlAs / Quantum Dots / 量子細線 / 量子井戸 / 表面・界面準位 / 量子構造 / Semiconductor / 結晶成長 / MISFET / CCD / インジウムガリウム砒素 / Compound Semiconductor / 表面準位 / InMnAs / InAs / AlGaN / GaN / トランジスタ / 電子準位 / 窒化ガリウム / ピンニング / 電子捕獲準位 / 周期的ナノチャネル / CV解析 / 電気化学エッチング / MOS / 異種接合 / Integrated Circuit / Slow-wave / Microwave / MIS Structure / Schottky Junction / Coplanar Waveguide / クロスタイコプレーナ線路 / 固体進行波相互作用 / 漏波 / 遅延 / 電磁波伝搬 / 半導体キャリア / 遅波 / マイクロ波 / MIS接合 / ショットキ接合 / コプレ-ナ線路 / nanowire / integrated sensor / sensor network / Schottky diode / nitride semiconductors / liquid sensor / hydrogen sensor / 2分決定論理 / ナノ細線 / 集積化センサ / センサネットワーク / ショットキダイオード / 溶液センサ / 水素センサ / electromagnetic bandgap / surface plasmon / metamaterial / terahertz / compound semiconductor / High-frequency circuits / wireless communication / ubiquitous communication / 人工磁気導体 / 光導電サンプリング / アンテナ / 電磁バンドギャップ / 表面プラズモン / メタマテリアル / テラヘルツ / 高周波回路 / ワイヤレス通信 / ユビキタス / heterointerface / Schottky contact / surface control / Gallium Nitride / 表面処理 / 窒化カリウム / ヘテロ構造 / ショットキー接合 / 表面制御 / enhancement of dielectric strength / Paschen curve / per-fluorocarbon / amorphous CF film / electric insulation / 薄膜堆積 / 薄膜推積 / フルオロカーボン / 非平衡プラズマ / 絶縁体力向上 / 絶縁耐力向上 / パッシェン曲線 / パーフルオロカーボン / アモルファスCF薄膜 / 電気絶縁 / Quantum Transport / Power-Delay Product / Quantum Wire Network / Schottky Gate / Hexagonal BDD Quantum Circuit / Binary Decision Diagram (BDD) / Single Electron Circuit / ヘキサゴナルBDD量子回路 / 量子輸送 / 電力・遅延積 / 量子細線ネットワーク / ナノショットキーゲート / ヘキサゴナルBDD回路 / 二分決定グラフ(BDD) / gate circuit / digital circuit / tunnel / single electron / majority logic / 集積 / 多数決 / ゲート回路 / ディジタル回路 / トンネル / 多数決論理 / Switching / High Speed / Diode / Schottky / スイッチング / 高速 / ダイオード / ショットキ / ultrathin Si control layer / シリコン超薄膜制御層 / intrinsic semiconductor island / SET circuit / single-electron-tunneling / logic device / cellular automaton / 学位セル / セリオートマトン / 量子 / 単位セル / 電気化学 / トンネル接合 / セルオートマトン / binary decision diagram / logic circuit / SET / Single electron / 二部決定グラフ / ロジック / 二分決定グラフ / Schottky gate / single electron transistor / quantum wire transistor / split gate / in-plane gate / 2DEG / quantum structure / ショットキーゲット / 単電子トランジスタ / 量子細線トランジスタ / スプリットゲート / インプレーンゲート / 2次元電子ガス / optical communication system / micro-wave devices / optoelectronic ICs / FET / 光通信システム / マイクロ波デバイス / 光電子集積回路 / 電界効果トランジスタ / photoluminescence / silicon interface control layr / surface passivation / surface and interface states / compound semiconductors / quantum wire / quantum well / シリコン界面制御層 / InAs dot / Solar cell / Interface state density / Surface recombination velocity / 再成長 / インジウムアルミニウム砒素 / Stranski-Krastanow成長 / 電極界面再結合 / 高濃度ドープ層 / InAsドット / 太陽電池 / 界面準位密度 / 表面再結合速度 / MOCVD / Crystal Growth / 有機金属気相成長法 / Surface passivation / Quantum well / Interface control / interface stete / Surface / Compound semiconductor / Quantum structure / 表面電気伝導 / 界面制御層 / Quantum dot / Cryxtal growth / interface states / interface / MIS構造 / 電荷撮像素子 / 超薄膜 / シリコン / 分子線エピタキシー / MIS形電界効果トランジスタ / 界面 / 電荷転送撮像素子 / Schottky Barrier / In-Situ Measurement / Hetero-Junction / Free Surface / Surface State Density / Surface Recombination / 計算機シミュレ-ション / 表面準位分布 / 表面再結合 / ヘテロ界面 / 半導体自由表面 / 表面準位密度分布 / in-situ評価 / Anomalous Hall Effect / Compound Semiconductors / III-V Compounds / Diluted Magnetic Semiconductors / 磁気抵抗効果 / 半磁性半導体 / 分子線エピタキシ / 異常ホ-ル効果 / IIIーV族 / 希薄磁性半導体 / 電気化学酸化 / 電流コラプス / 多重台形チャネル / AlInN / 窒素空孔 / ドライエッチング / ICP / ALD / へテロ接合 / MMC / 絶縁膜 / 表面・界面 / PL / 消費電力 / トンネル障壁 / 高誘電率膜 / 単電子デバイス / III-V族化合物半導体 / 量子デバイス / 波長分散 / 結合写像格子 / カオス同期 / カオス / 多重伝送 / 半導体レーザ Less
  • Research Projects

    (37 results)
  • Research Products

    (239 results)
  • Co-Researchers

    (32 People)
  •  Improvement of effective electron mobility in inversion-type n-channel gallium nitride MOSFET by interface controlPrincipal Investigator

    • Principal Investigator
      赤澤 正道
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Hokkaido University
  •  窒化物半導体異種界面パラレル伝導制御とマルチチャネル高周波トランジスタの開発

    • Principal Investigator
      佐藤 威友
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Hokkaido University
  •  Interface control of heterojunctions including singularity structures for advanced electron devices

    • Principal Investigator
      Hashizume Tamotsu
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Hokkaido University
  •  Control of insulator/InAlN interface using high-temperature annealed Al2O3 ultrathin layer and its applicationPrincipal Investigator

    • Principal Investigator
      Akazawa Masamichi
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Hokkaido University
  •  Control of Fermi level pinning at surfaces and interfaces of InAlNPrincipal Investigator

    • Principal Investigator
      AKAZAWA Masamichi
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Hokkaido University
  •  Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structure

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      2009 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Hokkaido University
  •  化合物半導体MIS界面準位に関するピンニング・スポット面内分布モデル

    • Principal Investigator
      長谷川 英機
    • Project Period (FY)
      2008
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Hokkaido University
  •  電界移動型量子ドットを用いた室温動作高速・超低消費電力単電子スイッチ素子の研究

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire Networks

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Hokkaido University
  •  カオス多重による超大容量光通信の研究

    • Principal Investigator
      SANO Eiichi
    • Project Period (FY)
      2004 – 2005
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Communication/Network engineering
    • Research Institution
      Hokkaido University
  •  Research on inter-ubiquitous-chip communication circuits using terahertz electromagnetic wave

    • Principal Investigator
      SANO Eiichi
    • Project Period (FY)
      2004 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Research on a highly efficient semiconductor THz emitting source using a metal thin-film meshPrincipal Investigator

    • Principal Investigator
      AKAZAWA Masamichi
    • Project Period (FY)
      2004 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Hokkaido University
  •  Surface/interface control of high-frequency and high-power transistors based on GaN materials

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      2002 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  可逆計算デバイスの実現に関する基礎的研究Principal Investigator

    • Principal Investigator
      赤澤 正道
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hokkaido University
  •  Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky Gates

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Development of insulating system with low dielectric constant, high dielectric strength a-C:F film coated conductor prepared by plasma CVD as alternatives to SF_6

    • Principal Investigator
      SAKAI Yosuke
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電力工学・電気機器工学
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  ボルテックスを利用した機能回路の開拓Principal Investigator

    • Principal Investigator
      赤澤 正道
    • Project Period (FY)
      1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Hokkaido University
  •  Single-electron device based on the majority logic.

    • Principal Investigator
      AMEMIYA Yoshihito
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  High Speed InP Schottky Power Rectifier

    • Principal Investigator
      WU Nan-Jian
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      The University of Electro-Communications
      Hokkaido University
  •  Implementation of Ultra Micro Boltzmann Machine NeuronPrincipal Investigator

    • Principal Investigator
      AKAZAWA Masamichi
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  超高密度多値メモリ集積回路の実現に関する基礎的研究Principal Investigator

    • Principal Investigator
      赤澤 正道
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hokkaido University
  •  Single-electron devices based on the binary decision diagram.

    • Principal Investigator
      AMEMIYA Yoshihito
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hokkaido University
  •  Cellular-Automaton Circuits Using Single-Electron-Tunneling Junctions

    • Principal Investigator
      WU Nan-Jian
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hokkdai University
  •  Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier height

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      極微細構造工学
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  InGaAs2次元電子ガスMISFETの試作Principal Investigator

    • Principal Investigator
      赤澤 正道
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Fabrication and Characterization of Self-organized Quantum Nano-structures.

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Study on Supcr-High Efficicncy InGaAs/InP Solar Ccll With Controlled Surface

    • Principal Investigator
      SAITOH Toshiya
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Characterization and Control of Interaction between Quantized Energy Levels and Surface/Interface States in Compound Semiconductor Quantum Structures.

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area Grant

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University
  •  Fabrication of Highly Functional MMICs Using Traveling Wave Interaction Mode and Static Magnetic Wave ModePrincipal Investigator

    • Principal Investigator
      AKAZAWA Masamichi
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University
  •  A Novel Contactless and Nondestructive Measurement Method of Surface State Density on Semiconductor Free Surface, and Control of Their Surfaces

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University, (Faculty of Engineering)
  •  A new MIS Interface Control Technology for Fabrication of High Spatial Resolution InGaAs Change Coupled Devices for Imaging

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University, (Faculty of Engineering)
  •  Growth and Characterization of Diluted Magnetic III-V Compound Semiconductors

    • Principal Investigator
      OHNO Hideo
    • Project Period (FY)
      1990 – 1991
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University
  •  New Waveguides for Microwave Monolithic Integrated Circuits Using Distributed Parameter Effects of Semiconductor Carriers

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University

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All Journal Article Presentation

  • [Journal Article] Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques2023

    • Author(s)
      Ochi Ryota、Togashi Takuya、Osawa Yoshito、Horikiri Fumimasa、Fujikura Hajime、Fujikawa Kazunari、Furuya Takashi、Isono Ryota、Akazawa Masamichi、Sato Taketomo
    • Journal Title

      Applied Physics Express

      Volume: 16 Issue: 9 Pages: 091002-091002

    • DOI

      10.35848/1882-0786/acf644

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23KJ0042, KAKENHI-PROJECT-23K26131
  • [Journal Article] Effects of dosage increase on electrical properties of MOS diodes with Mg-ion-implanted GaN before activation annealin2020

    • Author(s)
      M. Akazawa, R. Kamoshida, S. Murai, T. Narita, M. Omori, J. Suda, and T. Kachi
    • Journal Title

      Phys. Status Solidi B

      Volume: 257 Issue: 2

    • DOI

      10.1002/pssb.201900367

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Journal Article] Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing2020

    • Author(s)
      Akazawa Masamichi、Kamoshida Ryo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 9 Pages: 096502-096502

    • DOI

      10.35848/1347-4065/abac41

    • NAID

      120007145358

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Journal Article] Effects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers2020

    • Author(s)
      Isobe Kazuki、Akazawa Masamichi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 4 Pages: 046506-046506

    • DOI

      10.35848/1347-4065/ab8024

    • NAID

      120007000858

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Journal Article] Impact of Low-Temperature Annealing on Defect Levels Generated by Mg-Ion-Implanted GaN2019

    • Author(s)
      M. Akazawa and K. Uetake
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SCCB10-SCCB10

    • DOI

      10.7567/1347-4065/ab09d5

    • NAID

      120006841057

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Journal Article] Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation2019

    • Author(s)
      M. Akazawa, S. Kitajima, and Y. Kitawaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: 10 Pages: 106504-106504

    • DOI

      10.7567/1347-4065/ab3c49

    • NAID

      120006887714

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Journal Article] Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors2019

    • Author(s)
      S. Nakazawa, H.-A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, T. Kimoto, and T. Hashizume
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: 3 Pages: 030902-030902

    • DOI

      10.7567/1347-4065/aafd17

    • NAID

      210000135371

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Journal Article] Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers2017

    • Author(s)
      M. Akazawa and A. Seino
    • Journal Title

      Physica Status Solidi B

      Volume: 254 Issue: 8

    • DOI

      10.1002/pssb.201600691

    • NAID

      120006491497

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Journal Article] On the origin of interface states at oxide/III-nitride heterojunction interfaces2016

    • Author(s)
      M. Matys, B. Adamowicz, A. Domanowska, A. Michalewicz, R. Stoklas, M. Akazawa, Z. Yatabe, and T. Hashizume
    • Journal Title

      J. Appl. Phys.

      Volume: 120 Issue: 22

    • DOI

      10.1063/1.4971409

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04672, KAKENHI-PROJECT-15K18034
  • [Journal Article] Control of Al2O3/InAlN interface by two-step atomic layer deposition combined with high-temperature annealing2014

    • Author(s)
      T. Nakano, M. Chiba, and M. Akazawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 4S Pages: 04EF06-04EF06

    • DOI

      10.7567/jjap.53.04ef06

    • NAID

      210000143623

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Journal Article] Interface Investigation of High-Temperature-Annealed Ultrathin-ALD-Al2O3/InAlN Structures2014

    • Author(s)
      M. Akazawa and T. Nakano
    • Journal Title

      e-Journal of Surface Science and Nanotechnology

      Volume: 12 Pages: 83-88

    • NAID

      130004933800

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Journal Article] Appropriate fabrication procedure for InAlN metal-oxide-semiconductor structures with atomic-layer-deposited Al2O32014

    • Author(s)
      M. Chiba, T. Nakano, and M. Akazawa
    • Journal Title

      Phys. Status Solidi C

      Volume: 11 Issue: 3-4 Pages: 902-905

    • DOI

      10.1002/pssc.201300423

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Journal Article] Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN2013

    • Author(s)
      M. Akazawa, M. Chiba, and T. Nakano
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102

    • NAID

      120005315201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Journal Article] Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment2013

    • Author(s)
      T. Nakano and M. Akazawa
    • Journal Title

      IEICE Trans. Electron.

      Volume: E96.C Issue: 5 Pages: 686-689

    • DOI

      10.1587/transele.E96.C.686

    • NAID

      10031193914

    • ISSN
      0916-8524, 1745-1353
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Journal Article] Effects of Chemical Treatments and Ultrathin Al2O3 Deposition on InAlN Surface Investigated by X-ray Photoelectron Spectroscopy2013

    • Author(s)
      M. Akazawa and T. Nakano
    • Journal Title

      Jpn. J. Appl. phys.

      Volume: 52

    • NAID

      210000142769

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Journal Article] Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition2012

    • Author(s)
      M. Akazawa and T. Nakano
    • Journal Title

      Appl. Phys. Lett.

      Volume: 101 Issue: 12

    • DOI

      10.1063/1.4754141

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Journal Article] Investigation of native oxide layers on untreated and chemically treated InAlN surfaces by X-ray photoelectron spectroscopy2012

    • Author(s)
      M. Akazawa and T. Nakano
    • Journal Title

      ECS Solid State Letters,

      Volume: 1 Issue: 1 Pages: P4-P6

    • DOI

      10.1149/2.004201ssl

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Journal Article] Al_0.44Ga_0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures2011

    • Author(s)
      M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa
    • Journal Title

      Appl. Phys. Lerr.

      Volume: 98 Issue: 14 Pages: 142117-142117

    • DOI

      10.1063/1.3578449

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246007
  • [Journal Article] Measurement of valence-band offsets of InAlN/ GaN heterostructures grown by metal-organic vapor phase epitaxy2011

    • Author(s)
      M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa
    • Journal Title

      J. Appl. Phys.

      Volume: 109 Issue: 1 Pages: 13703-13703

    • DOI

      10.1063/1.3527058

    • Data Source
      KAKENHI-PROJECT-21246007
  • [Journal Article] Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy2010

    • Author(s)
      M. Akazawa, T. Matsuyama, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa
    • Journal Title

      Appl. Phys. Lett.

      Volume: 96 Issue: 13 Pages: 132104-132104

    • DOI

      10.1063/1.3368689

    • Data Source
      KAKENHI-PROJECT-21246007
  • [Journal Article] Small valence-band offset of In0.17A10.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Akazawa, T.Matsuyama, T.Hashizume, M.Hiroki, S.Yamahata, N.Shigekawa
    • Journal Title

      Appl.Phys.Lett.

      Volume: 96

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246007
  • [Journal Article] Distributed Pinning Spot Model for Highk Insulator - III-V Semiconductor Interfaces2009

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology Vol. 7

      Pages: 122-128

    • NAID

      130004439129

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-III Nitride Schottky Barriers2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Korean Physical Society 54(印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interfaces2009

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology 7

      Pages: 122-128

    • NAID

      130004439129

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interfaces2009

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology 7

      Pages: 122-128

    • NAID

      130004439129

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-III Nitride Schottky Barriers2009

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Journal Title

      J. Korean Physical Society 54(印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-Ill Nitride Schottky Barriers (invited)2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Korean Physical Society vol. 54 (in press)

      Pages: 10-10

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on A1GaN /GaN Heterostructures2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1542-1550

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Surface passivation technology for III V semiconductor nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science 255

      Pages: 628-632

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. c 5

      Pages: 1959-1961

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      Proceeding of International Conference on Indium Phosphide and related Materials 20

      Pages: 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] PERFORMANCE COMPAEISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      Proceedings of International Conference on Indium Phosphide and Related Materials 20

      Pages: 1-4

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Surface passivation technology for III V semiconductor nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science Vol. 255, No. 3

      Pages: 628-632

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Laver2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 2729-2732

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science 254

      Pages: 8005-8015

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation andInterface Control in III-V Semiconductor Nanoelectronics2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Journal Title

      Applied Surface Science 254(invited)

      Pages: 8005-8015

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) Vol. 5, No. 6

      Pages: 1959-1961

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science 254

      Pages: 3653-3666

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Surface passivation technology for III V semiconductor nanoelectronics2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Journal Title

      Applied Surface Science 255(invited)

      Pages: 628-632

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN /GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 26, No. 4

      Pages: 1542-1550

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      accepted for publication in Proceeding of 20th International Conference on Indium Phosphide and related Materials

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Laver2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1569-1578

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 26, No. 4

      Pages: 1569-1578

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      accepted for publication in phys. stat. sol. c 5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 1959-1961

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Siuface Science 254

      Pages: 3653-3666

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science Vol. 254, No. 24

      Pages: 8005-8015

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator- Semiconductor Structixre Having Silicon Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 2729-2732

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science Vol. 254

      Pages: 3653-3666

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science (in press ; available online) 254

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/A1GaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Getterinn2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 1959-1961

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Surface passivation technology for III-V semiconductor nanoelectronics2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      accepted for publication in Applied Surface Science 254

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1569-1578

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) Vol. 5, No. 9

      Pages: 2729-2732

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1542-1550

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Journal Title

      physica status solidi (a) 204

      Pages: 1034-1040

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2007

    • Author(s)
      H.Hasegawa, M.Akazawa
    • Journal Title

      Applied Surface Science (in press)(accepted for publication)

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Formation of Ultrathin SiNx/ Si Interface Control Double Layer on (001) and (Hi) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 25, No. 4

      Pages: 1481-1490

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN /GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 4

      Pages: 2629-2633

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Formation of Ultrathin SiN_x/ Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 25

      Pages: 1481-1490

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices2007

    • Author(s)
      M.Akazawa, H.Hasegawa
    • Journal Title

      Journal of Crystal Growth Vol.301-302

      Pages: 951-954

    • NAID

      120000965574

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 4

      Pages: 2629-2633

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Formation of Ultrathin SiN_x/Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 25

      Pages: 1481-1490

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) Vol. 4, No. 7

      Pages: 2629-2633

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (111) B sxirfaces for passivation of GaAs quantum wire devices2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 951-954

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] In-situ X-ray photoelectron spectros copy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Journal Title

      physica status solidi (a) Vol. 204, No. 4

      Pages: 1034-1040

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007

    • Author(s)
      M.Akazawa, H.Hasegawa
    • Journal Title

      physica status solidi (a) Vol.204, No.4

      Pages: 1034-1040

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN/GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H.Hasegawa, M.Akazawa
    • Journal Title

      J. Vac. Sci. Technol B Vol.25, No.4(in press)(accepted for publication)

    • NAID

      120000955872

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Formation of Ultrathin SiN_x/Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M.Akazawa, H.Hasegawa
    • Journal Title

      J. Vac. Sci. Technol B Vol.25, No.4(in press)(accepted for publication)

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN /GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M.Akazawa, H.Hasegawa
    • Journal Title

      physica status solidi (c) (in press)(accepted for publication)

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN/GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B 25

      Pages: 1495-1503

    • NAID

      120000955872

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (lll)B surfaces for passivation of GaAs quantum wire devices2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth Vol. 301-302

      Pages: 951-954

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN /GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 25, No. 4

      Pages: 1495-1503

    • NAID

      120000955872

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devipps2006

    • Author(s)
      N. Shiozaki, T. Sato, M. Akazawam, H. Hasegawa
    • Journal Title

      Journal de Physique IV Vol. 132

      Pages: 249-253

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Transmission Characteristics through Two-Dimensional Periodic Hole Arrays Perforated in Perfect Conductors2006

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano, M.Tanaka, F.Miyamaru, M.Hangyo
    • Journal Title

      Jpn.J.Appl.Phys. 45・5A

      Pages: 4058-4063

    • NAID

      40007248579

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Transmission Characteristics through Two-Dimensional Periodic Hole Arrays Perforated in Perfect Conductors2006

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano, M.Tanaka, F.Miyamaru, M.Hangyo
    • Journal Title

      Jpn.J.Appl.Phys. 45・5A(accepted for publication)(印刷中)

    • NAID

      40007248579

    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111)B Surfaces.2006

    • Author(s)
      M.Akazawa, N.Shiozaki H.Hasegawa
    • Journal Title

      Journal de Physique IV Vol.132

      Pages: 95-99

    • NAID

      120000958460

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] THz Transmission Propertiess of Metal Hole-Array Filters.2006

    • Author(s)
      Y.Yamazaki, M.Akazawa, E.Sano
    • Journal Title

      Collected Abstracts of 2006 RCIQE International Seminar (Sapporo, February 9-10,2006)

      Pages: 129-130

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces2006

    • Author(s)
      M.Akazawa, N.Shiozaki, H.Hasegawa
    • Journal Title

      Journal de Physique IV 1(accepted for publication)(印刷中)

    • NAID

      120000958460

    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devices2006

    • Author(s)
      N. Shiozaki, T. Sato, M. Akazawa, H. Hasegawa
    • Journal Title

      Journal de Physique IV 132

      Pages: 249-253

    • NAID

      120000953027

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces2006

    • Author(s)
      M.Akazawa, N.Shiozaki, H.Hasegawa
    • Journal Title

      Journal of Physique IV 132

      Pages: 95-99

    • NAID

      120000958460

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] THz transmission properties of metal hole-array filters.2006

    • Author(s)
      Y.Yamazaki, M.Akazawa, E.Sano
    • Journal Title

      Abstract of 2006 RCIQE International Seminar for 21^<st> Century COE Program", Sapporo, Japan

      Pages: 129-129

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111)B Surfaces2006

    • Author(s)
      M. Akazawa, N. Shiozaki, H. Hasegawa
    • Journal Title

      Journal de Physique IV 132

      Pages: 95-99

    • NAID

      120000958460

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] THz Transmission Properties of Metal Hole-Array Filters2006

    • Author(s)
      Y.Yamazaki, M.Akazawa, E.Sano
    • Journal Title

      Collected Abstracts of 2006 RCIQE International Seminar (Sapporo, February 9-10) 1

      Pages: 129-130

    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Transmission Characteristics through Two-Dimensional Periodic Hole Arrays Perforated in Perfect Conductors.2006

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano, M.Tanaka, F.Miyamaru, M.Hangyo
    • Journal Title

      Jpn.J.Appl.Phys. Vol.45, No.5A

      Pages: 4058-4063

    • NAID

      40007248579

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (ill) B Surfaces2006

    • Author(s)
      M. Akazawa, N. Shiozaki, H. Hasegawa
    • Journal Title

      Journal de Physique IV Vol. 132

      Pages: 95-99

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] THz Transmission Properties of Metal Hole-Array Filters2006

    • Author(s)
      Y.Yamazaki, M.Akazawa, E.Sano
    • Journal Title

      Collected Abstracts of 2006 RCIQE International Seminar (Sapporo, February 9-10, 2006) 1

      Pages: 129-130

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Evaluation of sub-terahertz periodic structure in a coplanar stripline.2005

    • Author(s)
      Y.Yamazaki, K.Inafune, M.Akazawa, E.Sano
    • Journal Title

      Tech. Report of IEICE vol.104, no.693

      Pages: 41-46

    • NAID

      110003205119

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] Photoconductive Sampling of Electromagnetic Periodic Structures in Subterahertz Coplanar Striplines2005

    • Author(s)
      Y.Yamazaki, K.Inafune, M.Akazawa, J.Motohisa, E.Sano
    • Journal Title

      Collected Abstracts of 2005 RCIQE International Seminar (February 8th-10th,2005,Sapporo)

      Pages: 144-144

    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Effect of a thin dielectric layer on terahertz transmission characteristics for metal hole arrays.2005

    • Author(s)
      M.Tanaka, F.Miyamaru, M.Hangyo, T.Tanaka, M.Akazawa, E.Sano
    • Journal Title

      Optics Lett. vol.30, no.10

      Pages: 1210-1212

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] Terahertz Transmission Property of a Thin Metal Hole-Array Filter.2005

    • Author(s)
      M.Akazawa, Y.Yamazaki, E.Sano
    • Journal Title

      Jpn.J.Appl.Phys. Vol.44, No.49

    • NAID

      10016873536

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Transmission Characteristics of THz Perfect-Conductor Perforated Plate Filters with Two-Dimensional Periodic Holes2005

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano
    • Journal Title

      Collected Abstracts of 2005 RCIQE International Seminar (February 8th-10th,2005,Sapporo)

      Pages: 145-145

    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] GaAs(111)B基板上に形成されたAlGaAs/GaAs量子構造のSi界面制御層による表面不活性化2005

    • Author(s)
      赤澤正道, 塩崎奈々子, 佐藤威友, 長谷川英機
    • Journal Title

      電子情報通信学会技術報告 ED2005-62

      Pages: 25-30

    • NAID

      110003205129

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Photoconductive sampling of electromagnetic periodic structures in subterahertz coplanar striplines.2005

    • Author(s)
      Y.Yamazaki, K.Inafune, M.Akazawa, J.Motohisa, E.Sano
    • Journal Title

      Abstract of 2005 RCIQE International Seminar for 21^<st> Century COE Program, Sapporo, Japan

      Pages: 144-144

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] Terahertz transmission property of a thin metal hole-array filter2005

    • Author(s)
      M.Akazawa
    • Journal Title

      Japan J. Appl. Phys. vol. 44, no. 49

    • NAID

      10016873536

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] コプレーナ伝送線路を用いたサブテラヘルツ1次元周期構造の評価2005

    • Author(s)
      山崎雄介, 稲船浩司, 赤澤正道, 佐野栄一
    • Journal Title

      電子情報通信学会技術報告 MW2005-133

      Pages: 41-46

    • NAID

      110003205119

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Transmission characteristics of THz perfect-conductor perforated plate filters with two-dimensional periodic holes.2005

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano
    • Journal Title

      Abstract of 2005 RCIQE International Seminar for 21^<st> Century COE Program, Sapporo, Japan

      Pages: 145-145

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces2005

    • Author(s)
      M.Akazawa, N.Shiozaki, H.Hasegawa
    • Journal Title

      Abstracts of 10th International Conference on the Formation of Semiconductor Interfaces (Aix-en-Provence, July, 2005) 1

    • NAID

      120000958460

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Transmission Characteristics of THz Perfect-Conductor PerforatedPlate Filters with Two-Dimensional Periodic Holes2005

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano
    • Journal Title

      Collected Abstracts of 2005 RCIQE International Seminar (Sapporo, February 8-10, 2005) 1

      Pages: 145-145

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Photoconductive Sampling of Electromagnetic Periodic Structures in Subterahertz Coplanar Striplines2005

    • Author(s)
      Y.Yamazaki, K.Inafune, M.Akazawa, J.Motohisa, E.Sano
    • Journal Title

      Collected Abstracts of 2005 RCIQE International Seminar (Sapporo, February 8-10, 2005) 1

      Pages: 144-144

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Terahertz Transmission Property of a Thin Metal Hole-Array Filter2005

    • Author(s)
      M.Akazawa, Y.Yamazaki, E.Sano
    • Journal Title

      Jpn.J.Appl.Phys. 44・49

    • NAID

      10016873536

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111)B Surfaces.2005

    • Author(s)
      M.Akazawa, N.Shiozaki, H.Hasegawa
    • Journal Title

      Abstracts of 10th International Conference on the Formation of Semiconductor Interfaces (Aix-en-Provence, France, ICFSI-10,July 3-8,2005)

    • NAID

      120000958460

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Transmission Characteristics of THz Perfect-Conductor Perforated Plate Filters with Two-Dimensional Periodic Holes.2005

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano
    • Journal Title

      Collected Abstracts of 2005 RCIQE International Seminar (Sapporo, February 8-10,2005)

      Pages: 145-145

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Photoconductive Sampling of Electromagnetic Periodic Structures in Subterahertz Coplanar Striplines.2005

    • Author(s)
      Y.Yamazaki, K.Inafune, M.Akazawa, J.Motohisa, E.Sano
    • Journal Title

      Collected Abstracts of 2005 RCIQE International Seminar (Sapporo, February 8-10,2005)

      Pages: 144-144

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] コプレーナ伝送線路を用いたサブテラヘルツ1次元周期構造の評価2005

    • Author(s)
      山崎雄介, 稲船浩司, 赤澤正道, 佐野栄一
    • Journal Title

      電子情報通信学会技術報告 MW2005

      Pages: 61-66

    • NAID

      110003205119

    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Using FDTD method to design millimeter-wave active integrated antenna.2005

    • Author(s)
      K.Inafune, M.Akazawa, E.Sano
    • Journal Title

      Abstract of 2005 RCIQE International Seminar for 21^<st> Century COE Program, Sapporo, Japan

      Pages: 143-143

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] THz-wave filters using surface periodic structures composed of the metal films.2004

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano
    • Journal Title

      Tech. Report of IEICE vol.109, no.296

      Pages: 51-56

    • NAID

      110003179773

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] RF CMOS inductor shielded by a high-impedance surface,2004

    • Author(s)
      E.Sano, K.Inafune, M.Akazawa
    • Journal Title

      IEICE Electronics Express vol.1, no.8

      Pages: 232-236

    • NAID

      130000088075

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] 金属薄膜による表面周期構造を利用したTHz波フィルタ2004

    • Author(s)
      田中毅, 赤澤正道, 佐野栄一
    • Journal Title

      電子情報通信学会技術報告 MW2004-133

      Pages: 51-56

    • NAID

      110003179773

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] A low-loss coplanar waveguide for the THz region and its application to electromagnetic-bandgap filters.2004

    • Author(s)
      K.Inafune, M.Akazawa, E.Sano
    • Journal Title

      Tech. Report of IEICE vol.109, no.296

      Pages: 45-49

    • NAID

      110003179772

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Journal Article] Evaluation of Sub-Terahertz Periodic Structure in a Coplanar Stripline.

    • Author(s)
      Y.Yamazaki, K.Inafune, M.Akazawa, E.Sano
    • Journal Title

      Technical Report of IEICE ED2004-248

      Pages: 41-46

    • NAID

      110003205119

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] THz-Wave Filters Using Surface Periodic Structures Composed of the Metal Films.

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano
    • Journal Title

      Technical Report of IEICE MW2004-133

      Pages: 51-56

    • NAID

      110003179773

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Surface Passivation Using a Si Interface Control Layer for AlGaAs/GaAs Quantum Structures Fabricated on GaAs(111)B Substrates.

    • Author(s)
      M.Akazawa, N.Shiozaki, T.Sato, H.Hasegawa
    • Journal Title

      Technical Report of IEICE ED2005-62

      Pages: 25-30

    • NAID

      110003205129

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560288
  • [Journal Article] Transmission Characteristics through Two-Dimensional Periodic Hole Arrays Perforated in Perfect Conductors.

    • Author(s)
      T.Tanaka, M.Akazawa, E.Sano, M.Tanaka, F.Miyamaru, M.Hangyo
    • Journal Title

      Jpn.J.Appl.Phys. vol.45, no.5A

      Pages: 4058-4063

    • NAID

      40007248579

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360161
  • [Presentation] Effects of SiO2-Cap Annealing Prior to Interface Formation on Properties of Al2O3/p-type GaN Interfaces2024

    • Author(s)
      Y. Jiao, T. Nukariya, U. Takatsu, T. Sato, and M. Akazawa
    • Organizer
      16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K26131
  • [Presentation] 光電気化学エッチングを施したp-GaNを用いたMOS構造のサブバンドギャップ光支援C-V測定2023

    • Author(s)
      忽滑谷崇秀, 焦一寧,高津海, 佐藤威友, 赤澤正道
    • Organizer
      第84 回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26131
  • [Presentation] AlGaN/GaNヘテロ構造の光電気化学エッチングと反応速度の制御2023

    • Author(s)
      富樫拓也、沖勇吾、大澤由斗、越智亮太、赤澤正道、佐藤威友
    • Organizer
      第84 回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26131
  • [Presentation] Interface Properties of p-type GaN MOS Structures Examined by Sub-Bandgap-Light-Assisted Capacitance-Voltage Measurement2023

    • Author(s)
      T. Nukariya, J. Yining, U. Takatsu, T. Sato, and M. Akazawa
    • Organizer
      14th International Conference on Nitride Semiconductors (ICNS)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K26131
  • [Presentation] GaNのコンタクトレス光電気化学(CL-PEC)エッチングにおける溶液pHの影響2023

    • Author(s)
      大澤 由斗、赤澤正道、佐藤 威友
    • Organizer
      第84 回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26131
  • [Presentation] 光電気化学エッチングを施したp-GaN MOS界面の特性に対する界面形成プロセスの影響2023

    • Author(s)
      焦一寧, 忽滑谷崇秀, 高津海, 佐藤威友, 赤澤正道
    • Organizer
      第71 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26131
  • [Presentation] A Defect Level Generated in GaN by High-Temperature Annealing with AlN Encapsulation2021

    • Author(s)
      M. Akazawa, Y. Tamamura and S. Murai
    • Organizer
      13th International Symposium on Advanced Science and its Appliaction for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology & Science (ISPlasam2021/IC-PLANTS2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Presentation] Mgイオン注入GaNに対する低温熱処理の効果における表面保護膜材料依存性2020

    • Author(s)
      村井駿太、呉 恩誠,赤澤 正道, 加地 徹
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Presentation] Impact of Cap-Layer Materials Used in Long-Term Low-Temperature Annealing on Electrical Properties of Mg-Ion Implanted GaN2020

    • Author(s)
      M. Akazawa, S. Murai, R. Kamoshida, E. Wu, and T. Kachi
    • Organizer
      62nd Electronic Materials Conference (EMC2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Presentation] Control of SiO2/InAlN Interface by Plasma Surface Oxidation2019

    • Author(s)
      S. Kitajima and M. Akazawa
    • Organizer
      11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma-2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Presentation] プラズマ酸化膜介在層を有するSiO2/InAlN界面の特性2018

    • Author(s)
      北嶋翔平,赤澤正道
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] Al2O3およびプラズマ酸化物超薄膜介在層を有するSiO2/InAlN界面の特性2018

    • Author(s)
      北嶋翔平,赤澤正道
    • Organizer
      第53回応用物理学会北海道支部/第14回日本光学会北海道支部合同学術講演会
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] Investigation of Effect of Low-Temperature Annealing and Dosage on Mg-Ion- Implanted GaN Using MOS Structure2018

    • Author(s)
      K. Uetake, R. Kamoshida, and M. Akazawa
    • Organizer
      International Workshop on Nitride Semiconductors (IWN-2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Presentation] Fast Switching Performance by 20 A/730 V AlGaN/GaN MIS-HFET Using AlON Gate Insulator2017

    • Author(s)
      S. Nakazawa, H.-A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, M. Nozaki, T. Yamada, T. Hosoi, T. Shimura, H. Watanabe, and T. Hashizume
    • Organizer
      63rd. International Electron devices Meeting (IEDM-2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06421
  • [Presentation] Al2O3超薄膜介在層を有するSiO2/InAlN界面の特性2017

    • Author(s)
      北嶋翔平,赤澤正道
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] Al2O3超薄膜層を挿入したSiO2/InAlN界面の特性―Al2O3膜厚依存性―2017

    • Author(s)
      清野 惇、赤澤 正道
    • Organizer
      2017年<第64回>応用物理学会春季学術講演会
    • Place of Presentation
      横浜市,パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] プラズマCVD SiO2/InAlN界面へのAl2O3超薄膜層挿入の効果2016

    • Author(s)
      清野 惇,長谷崎泰斗,横田直茂,赤澤 正道
    • Organizer
      2016年<第63回>応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] Characterization of Surfaces and Interfaces of InAlN (invited)2016

    • Author(s)
      M. Akazawa
    • Organizer
      2016 RCIQE International Seminar
    • Place of Presentation
      Sapporo (Japan)
    • Year and Date
      2016-03-08
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] Reduction of Interface State Density at SiO2/InAlN Interface by Inserting Ultrathin Interlayers2016

    • Author(s)
      M. Akazawa, A. Seino, N. Yokota and T. Hasezaki
    • Organizer
      International Workshop on Nitride Semiconductors 2016
    • Place of Presentation
      Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] プラズマ酸化層を挿入したSiO2/InAlN界面の特性2016

    • Author(s)
      清野 惇、横田 直茂、赤澤 正道
    • Organizer
      2016年<第77回>応用物理学会秋季学術講演会
    • Place of Presentation
      新潟市,朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] Nature and origin of interface states at dielectric/III-N heterojunction interfaces2015

    • Author(s)
      M. Matys, B. Adamowicz, R. Stoklas, M. Akazawa, Z. Yatabe, and T. Hashizume
    • Organizer
      2015 MRS Fall Meeting & Exhibit
    • Place of Presentation
      Boston (USA)
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] プラズマCVDにより形成されたSiO2/InAlN界面の評価2015

    • Author(s)
      清野 惇,赤澤 正道
    • Organizer
      2015年<第76回>応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(名古屋)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] Characterization of Surfaces and Interfaces of InAlN/GaN Heterostructures (invited)2015

    • Author(s)
      M. Akazawa and T. Hashizume
    • Organizer
      11th International Conference on Nitride Semiconductors (ICNS11)
    • Place of Presentation
      Beijing (China)
    • Year and Date
      2015-08-30
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04672
  • [Presentation] ALD Al2O3絶縁体層を有するInAlN MOSダイオードの特性に対するアニールの効果2014

    • Author(s)
      千葉 勝仁, 中野 拓真, 赤澤 正道
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学(相模原)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] 2段階ALDにより形成されたAl2O3/InAlN界面の特性2014

    • Author(s)
      中野 拓真,千葉 勝仁,小棚木 陽一郎,赤澤 正道
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学(相模原)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] InAlN/GaNヘテロ構造の表面・界面の評価と制御2013

    • Author(s)
      赤澤正道 橋詰保
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(厚木市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] Effects of High-Temperature Annealing on Properties of Al2O3/InAlN Interface Formed by Atomic Layer Deposition2013

    • Author(s)
      T. Nakano, M. Chiba, and M. Akazawa
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM2013)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk (Japan)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] 「InAlN/GaNヘテロ構造の表面・界面の評価と制御」、応用物理学関係連合講演会シンポジウム:GaN系材料表面・界面評価の進展2013

    • Author(s)
      赤澤正道、橋詰保
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学、神奈川
    • Data Source
      KAKENHI-PROJECT-21246007
  • [Presentation] ALD-Al2O3を有するInAlN MOS 構造の電気的特性に対する作製プロセスの影響2013

    • Author(s)
      千葉 勝仁,中野 拓真,赤澤 正道
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      大阪大学(吹田)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] Dependence of ALD-Al2O3/InAlN interface properties on fabrication process2013

    • Author(s)
      T. Nakano, M. Chiba, and M. Akazawa
    • Organizer
      10th International Conference on Nitride Semiconductors (ICNS-10)
    • Place of Presentation
      Gaylord National Resort & Convention Center, Washington, DC, (USA)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] 高温熱処理を挟む2 段階ALD プロセスによるAl2O3/InAlN 界面特性の向上2013

    • Author(s)
      中野 拓真,千葉 勝仁,赤澤 正道
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学(京都)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] ALD-Al2O3/InAlN界面に対する熱処理の効果2013

    • Author(s)
      中野拓真 赤澤正道
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(厚木市)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] InAlN/GaN ヘテロ構造の表面・界面の評価と制御2013

    • Author(s)
      赤澤正道、橋詰 保
    • Organizer
      応用物理学関係連合講演会シンポジウム
    • Place of Presentation
      神奈川工科大学、神奈川県
    • Invited
    • Data Source
      KAKENHI-PROJECT-21246007
  • [Presentation] ALD-Al2O3 絶縁体層を有するInAlN MOS ダイオードの作製手順の検討2013

    • Author(s)
      千葉 勝仁, 中野 拓真, 赤澤 正道
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学(京都)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] Investigation of High-Temperature Annealed ALD-Al2O3/InAlN Interface2013

    • Author(s)
      M. Akazawa, T. Nakano, and M. Chiba
    • Organizer
      12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures in conjunction with 21st International Conference on Scanning Probe Microscopy (ACSIN-12 & ICSPM21)
    • Place of Presentation
      Tsukuba International Congress Center (Japan)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] Effect of hydrofluoric acid treatment on InAlN surfaces2012

    • Author(s)
      T. Nakano and M. Akazawa
    • Organizer
      2012 Asia-Pacific Workshop on Fundamental and Applications of Advanced Semiconductor Devices (AWAD2012)
    • Place of Presentation
      沖縄青年会館(那覇市)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] Effects of surface treatment on InAlN investigated by X-ray photoelectron spectroscopy2012

    • Author(s)
      M. Akazawa and T. Nakano
    • Organizer
      International Workshop on Nitride Semiconductors 2012 (IWN2012)
    • Place of Presentation
      札幌コンベンションセンター(札幌市)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] InAlN表面に対する弗化水素酸処理の効果2012

    • Author(s)
      中野拓真 赤澤正道
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(松山市)
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] Capacitance-Voltage and Photoluminescence Study of High-k /III-V Semiconductor Interfaces Controlled by Si Interface Control Layer2009

    • Author(s)
      Masamichi Akazawa, Marcin Miczek, Boguslawa Adamowicz, Hideki Hasegawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-36)
    • Place of Presentation
      Santa Barbara, California, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate A anN taaN Heterostructure Transistors2009

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-12
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate AlGaN /GaN Heterostructure Transistors2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-36)
    • Place of Presentation
      Santa Barbara, California, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The Symposium on Surface and Nano Science 2009 (SSNS'09)
    • Place of Presentation
      Shizukuishi, Iwate, Japan, January
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate AlGaN/GaN Heterostructure Transistors2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-12
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      The Symposium on Surface and Nano Science 2009
    • Place of Presentation
      Shizukuishi Prince Hotel, Shizukuishi, Iwate, Japan
    • Year and Date
      2009-01-27
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The Symposium on Surface and Nano Science 2009
    • Place of Presentation
      Shizukuishi Prince Hotel, Shizukuishi, Iwate, Japan
    • Year and Date
      2009-01-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Capacitance-Voltage and Photoluminescence Study of High-k/III-V Semiconductor Interfaces Controlled by Si Interface Control Laver2009

    • Author(s)
      M. Akazawa, M. Miczek, B. Adamowicz and H. Hasegawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semicoinductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-13
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Capacitance-Voltage and Photoluminescence study of High-k/III-V Semiconductor Interfaces Controlled by Si Interface Control Layer2009

    • Author(s)
      M. Akazawa, M. Miczek, B. Adamowicz, H. Hasegawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-13
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Distributed Pinning Spot Model for High-k Insulator - III-V Semiconductor Interface2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology QSSS-5)
    • Place of Presentation
      Tokyo, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal- Insulator- Semiconductor Capacitors2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2008 Electronic Material Conference (EMC2008)
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2008-05-20
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      La Fonda Hotel, Santa Fe, New Mexico, USA
    • Year and Date
      2008-01-16
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal-Insulator-Semiconductor Capacitors2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      Univer Sity of California Santa Barbara, Califomia, USA
    • Year and Date
      2008-06-26
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Interface Control of High-k MOS Gate Stack for GaAs nanowire Transistors2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Symposium on Surface and Nano Science 2008
    • Place of Presentation
      Hotel Appi Grand, Appi, Iwate, Japan
    • Year and Date
      2008-01-23
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] PERFORMANCE COMPARISON OF InP AND A1GaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Organizer
      20th International Conference on Indium Phosphide and Related
    • Place of Presentation
      Versailles, France
    • Year and Date
      2008-05-26
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-35)
    • Place of Presentation
      Santa Fe, New Mexico, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 14th Intemational Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2008-08-28
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN /GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      La Fonda Hotel, Santa Fe, New Mexico. USA
    • Year and Date
      2008-01-16
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on AlGaN/GaN Wafer2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2008 Electronic Material Conference (EMC2008)
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC2008)
    • Place of Presentation
      Lodz, Poland
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs Metal-Insulator-Semiconductor Structures2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interface2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2008-11-15
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of Group-HI Nitride Surfaces for Power Electronics and Sensor Electronics2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      The 14th International Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Jeju, Korea(invited)
    • Year and Date
      2008-08-28
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Interface Control of High-k MOS Gate Stack for GaAs nanowire Transistors (invited)2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      Symposium on Surface and Nano Science 2008
    • Place of Presentation
      Hotel Appi Grand, Appi, Iwate, Japan
    • Year and Date
      2008-01-23
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interface2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2008-11-15
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] AIGaN/GaNプレーナ・ショットキダイオードの低速分散性過渡応答2008

    • Author(s)
      長谷川英機, 赤澤正道
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      千葉県船橋市
    • Year and Date
      2008-03-29
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2008-05-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] On the Anomalous Admittance Behavior of Non-Silicon High-k MOS Structures2008

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
    • Place of Presentation
      長野県長野市
    • Year and Date
      2008-08-17
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe (WOCSDICE2008)
    • Place of Presentation
      Leuven, Belgium
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] On the Anomalous Admittance Behavior of Non-Silicon High-k MOS Structures2008

    • Author(s)
      赤澤正道、長谷川英機
    • Organizer
      社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
    • Place of Presentation
      長野県長野市
    • Year and Date
      2008-08-17
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on AlGaN/GaN Wafer2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      UniverSity of Californmia Santa Barbara, Califomia, USA
    • Year and Date
      2008-06-26
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland(invited)
    • Year and Date
      2008-06-03
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs MetaHnsulator-Semiconductor Structures2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC2008)
    • Place of Presentation
      Lodz, Poland
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      20th International Conference on Indium Phosphide and Related Materials (IPRM08)
    • Place of Presentation
      Versailles, France
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      2008-06-03
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal-Insulator-Semiconductor Capacitors2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Year and Date
      2008-06-26
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 14th International Symposium on the Physics of Semiconductors and Applications (ISPA2008)
    • Place of Presentation
      Jeju, Korea
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      La Fonda Hotel, Santa Fe, New Mexico, USA
    • Year and Date
      2008-01-16
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs Metal-Insulator-Semiconductor Structures2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      2008-06-04
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on A1GaN/GaN Wafer2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Year and Date
      2008-06-26
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      20th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Versailles, France
    • Year and Date
      2008-05-26
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] シリコン界面制御層を有するGaAs高誘電体MISキャパシタのアドミッタンス2008

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      千葉県船橋市
    • Year and Date
      2008-03-28
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-35)
    • Place of Presentation
      Santa Fe, New Mexico, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Hydrogen Response Characteristics and Mechanism of Pd/ AlGaN/ GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Year and Date
      2007-01-16
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Silicon Interface Control Laver Based Surface Passivation Method and Related High-k MIS Gate stack for GaAs Nanowire MISFETs2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      International Symposium on Advanced nanodevices and Nanotechnology
    • Place of Presentation
      Waikoloa Beach Marriot, Waikoloa, Hawaii, USA
    • Year and Date
      2007-12-03
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Silicon Interface Control Layer Based Surface Passivation Method and Related High-k MIS Gate Stack for GaAs Nanowire MISFETs2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      International Symposium on Advanced nanodevices and Nanotechnology
    • Place of Presentation
      Waikoloa Beach Marriot, Waikoloa, Hawaii, USA
    • Year and Date
      2007-12-03
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] GaAs High-k Dielectric MOS Structure Having Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 34th International Symposium on Compound Semiconductors (ISCS-34)
    • Place of Presentation
      Kyoto, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Interface Control Technology for Surface Passivation of III-V Semiconductor Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th International Workshop on Semi- conductor Surface Passivation
    • Place of Presentation
      Zakopane, Poland
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Dynamic behavior of metal contacts formed on AlGaN/GaN heterostructure2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, Nevada, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Sensing and current transport mechanisms of a high performance Pd/AlGaN/GaN Schottky diode hydrogen sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      7th International Conference on Nitride Semiconductor
    • Place of Presentation
      MG Grand Hotel, Las Vegas, Nevada, USA
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] GaAs High-k Dielectric MOS Structure Having Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 34th International Symposium on Compound Semiconductor
    • Place of Presentation
      Kyoto University, Kyoto, Japan
    • Year and Date
      2007-10-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Schottky Interfaces of AlGaN/GaN system for hydrogen sensor applications (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Symposium on Surface and Nano Science 2007
    • Place of Presentation
      Appi, Iwate, Japan
    • Year and Date
      2007-01-23
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Growth Mechanism and Fermi Level Unpinning in Silicon Interface Control Layers for Surface Passivation of (001) and (111) GaAs and AlGaAs Surfaces2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Year and Date
      2007-01-17
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Interface Control Technology for Surface Passivation of III-V Semiconductor Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th International Workshop on Semiconductor Surface Passivation
    • Place of Presentation
      GEOVITA, Zakopane, Poland
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Dynamic behavior of metal contacts formed on AlGaN/GaN heterostructure2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      7th International Conference on Nitride Semiconductor
    • Place of Presentation
      MG Grand Hotel, Las Vegas, Nevada, USA
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Complete Removal of Fermi Level Pinning at Highk Dielectric/GaAs (001) and (111)B Interfaces by a Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 Electronic Material Conference (EMC2007)
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Silicon Interface Control Layer Based Surface Passivation Method and Related High-k MIS Gate Stack for GaAs Nanowire MISFETs2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 2007 International Symposium on Advanced nanodevices and Nanotechnology (ISANN2007)
    • Place of Presentation
      Waikoloa, Hawaii, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Complete Removal of Fermi Level Pinning at High-k Dielectric/GaAs (001) and (111)B Interfaces by a Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 Electronic Material Conference
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      2007-06-21
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Growth Mechanism and Fermi Level Unpinning in Silicon Interface Control Layers for Surface Passivation of (001) and (111) GaAs and AlGaAs Surfaces2007

    • Author(s)
      Masamichi Akazawa, Hideki Hasegawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34)
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Performance Enhancement and Sensing Mechanism of Pd/AlGaN/GaN Hydrogen Sensors Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2007 Electronic Material Conference (EMC2007)
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Passivation of III-V Surface by Si Interface Control Layer and Its Application of high-k MIS Gate Stack (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      International Workshop on High-k Dielectrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Year and Date
      2007-05-24
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Schottky Interfaces of AlGaN/GaN system for hydrogen sensor applications (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Symposium on Surface and Nano Science 2007 (SSNS '07)
    • Place of Presentation
      Iwate, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Surface passivation technology for III-V semiconductor nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces
    • Place of Presentation
      Tropical Eco Resort, Manaus-Amazonas, Brazil
    • Year and Date
      2007-08-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] MBE growth and in-situ XPS characterization of silicon interlayers for surfaces passivation of GaAs quantum devices2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 RCIQE International Seminar on"Advanced Semiconductor Materials and Devices, "
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2007-02-09
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Passivation of III-V Surface by Si Interface Control Layer and Its Application of high-k MIS Gate Stack (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Interntional Workshop on High-k Di- electrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Complete Removal of Fermi Level Pinning at High-k Dielectric/GaAs (001) and (111) B Interfaces by a Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 Electronic Material Conference
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      2007-06-21
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Si界面制御層によるHfO2/GaAs界面の制御2007

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      第68回応用物理学学術講演会
    • Place of Presentation
      札幌市
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Surface passivation technology for III-V semiconductor nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces (ICFSI-11)
    • Place of Presentation
      Manaus-Amazonas, Brazil
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Pd/AlGaN/GaNショットキーダイオード形水素センサの大気中動作特性2007

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      第68回応用物理学学術講演会
    • Place of Presentation
      札幌市
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Hydrogen Response Characteristics and Mechanism of Pd/ AlGaN/ GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      Hideki Hasegawa, Masamichi Akazawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34)
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Sensing and current transport mechanisms of a high performance Pd/AlGaN/GaN Schottky diode hvdroeen sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, Nevada, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Performance Enhancement and Sensing Mechanism of Pd/AlGaN/GaN Hydrogen Sensors Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2007 Electronic Material Conference
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      2007-06-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Understanding and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th Solid State Surfaces and Interfaces (SSSI2006)
    • Place of Presentation
      Smolenice Castle, Slovak Republic
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Understanding and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th Solid State Surfaces and Interfaces
    • Place of Presentation
      Smolenice Castle, Slovak Republic
    • Year and Date
      2006-11-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Technical Digest of International Workshop on Nitride Semiconductors (IWN2006)
    • Place of Presentation
      Kyoto, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] MBE Growth and In-Situ XPS Characterization of Silicon Interlayers on (111) B Surfaces for Passivation of GaAs Quantum Wire Devices2006

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2006-09-05
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] MBE Growth and In-Situ XPS Characterization of Silicon Interlayers on (111)B Surfaces for Passivation of GaAs Quantum Wire Devices2006

    • Author(s)
      Masamichi Akazawa, Hideki Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
    • Place of Presentation
      Tokyo, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2006

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Organizer
      8th Intemational Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Cadiz, Spain
    • Year and Date
      2006-05-16
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of AlGaN Schottky Diodes for Performance Enchancement of Hydrogen Sensors2006

    • Author(s)
      H. Hasegawa, KMatsuo, T. Kimura, J. Kotani, M. Akazawa, T. Hashizume
    • Organizer
      8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06)
    • Place of Presentation
      Cadiz, Spain
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] In-situ X-ray photoelectron spectros copy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2006

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Organizer
      8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06)
    • Place of Presentation
      Cadiz, Spain
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2006-10-25
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of AlGaN Schottky Diodes for Performance Enchancement of Hydrogen Sensors2006

    • Author(s)
      H. Hasegawa, K. Matsuo, T. Kimura, J. Kotani, M. Akazawa, T. Hashizume
    • Organizer
      8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Cadiz, Spain
    • Year and Date
      2006-05-15
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] 2段階ALD成膜Al2O3/InAlN界面のMOSHEMTへの応用

    • Author(s)
      小棚木 陽一郎、赤澤 正道、Joel T.Asubar、谷田部 然治、橋詰 保
    • Organizer
      2014年応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] Al2O3/InAlN界面特性のプロセス依存性

    • Author(s)
      千葉 勝仁、赤澤 正道
    • Organizer
      2015年応用物理学会秋季学術講演会
    • Place of Presentation
      平塚
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] Impact of Annealing on Properties of ALD Al2O3/InAlN Interfaces

    • Author(s)
      M. Akazawa, T. Nakano and M. Chiba
    • Organizer
      56th Electronic Materials Conference (EMC56)
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2014-06-25 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-24560022
  • [Presentation] Process-dependent properties of InAlN surface and ALD-Al2O3/InAlN interface

    • Author(s)
      M. Akazawa, M. Chiba, and T. Nakano
    • Organizer
      2014 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH 2014)
    • Place of Presentation
      Denver, Colorado, USA
    • Year and Date
      2014-05-19 – 2014-05-22
    • Data Source
      KAKENHI-PROJECT-24560022
  • 1.  HASEGAWA Hideki (60001781)
    # of Collaborated Projects: 16 results
    # of Collaborated Products: 139 results
  • 2.  WU Nan-jan (00250481)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 0 results
  • 3.  HASHIZUME Tamotsu (80149898)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 8 results
  • 4.  AMEMIYA Yoshihito (80250489)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 0 results
  • 5.  MOTOHISA Jun-ich (60212263)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 6.  SATO Taketomo (50343009)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 6 results
  • 7.  IIZUKA Kouichi (30193147)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 8.  SANO Eiichi (10333650)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 29 results
  • 9.  FUKUI Takashi (30240641)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 10.  YOH Kanji (60220539)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 11.  OHNO Hideo (00152215)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 12.  SAITOH Toshiya (70241396)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 13.  SAWADA Takayuki (40113568)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 14.  KASAI Seiya (30312383)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 15.  SEKI Shouhei
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 16.  KOGA Hiroaki (80519413)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  KUBO Toshiharu (10422338)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  FUJIKURA Hajime (70271640)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  YASUNAGA Hitoshi (40017330)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  ASAI Tetsuya (00312380)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 21.  SAKAI Yosuke (20002199)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  SUDA Yoshiyuki (70301942)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 23.  SUGAWARA Hirotake (90241356)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  BRATESCU A. maria (70312379)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  YAMAMOTO Masafumi (10322835)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 26.  OTSUJI Taiichi (40315172)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 27.  IKEBE Masayuki (20374613)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 28.  FUKAI Ichirou (70001740)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 29.  三好 実人 (30635199)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 30.  TSUBOUCHI Natsuro
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 31.  NAKAJIMA Masatoshi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 32.  石井 宏辰
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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