YAGI Shuhei 八木修平

… Alternative Names

八木修平ヤギシュウヘイ

YAGI SHUHEI 八木修平

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Researcher Number	30421415
Other IDs	https://orcid.org/0000-0002-8194-0656
Affiliation (Current)	2024: 埼玉大学, 理工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2024: 埼玉大学, 理工学研究科, 准教授 2022: 埼玉大学, 理工学研究科, 准教授 2016 – 2020: 埼玉大学, 理工学研究科, 准教授 2014: 埼玉大学, 大学院理工学研究科, 助教 2011: 埼玉大学, 大学院・理工学研究科, 助教 2010 – 2011: 埼玉大学, 理工学研究科, 助教
Review Section/Research Field	Principal Investigator Design and evaluation of sustainable and environmental conscious system / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Applied materials science/Crystal engineering / Basic Section 21050:Electric and electronic materials-related / Crystal engineering
Keywords	Principal Investigator 分子線エピタキシー / 中間バンド型太陽電池 / 高効率太陽電池 / 希釈窒化物半導体 / 希釈窒化物混晶半導体 / 2段階光吸収電流 / 希釈窒化物混晶 / タンデム型太陽電池 / 中間バンド太陽電池 / タンデム太陽電池 … More / 希釈窒化物 / GaPN / InGaAsN / 光物性 / 高効率太陽光発電材料・素子 / 半導体超格子 / 結晶成長 / 半導体物性 / 超格子 / ナノ材料 / 再生可能エネルギー / Ⅲ-Ⅴ族化合物 / 太陽電池 … More Except Principal Investigator エピタキシャル成長 / MBE、エピタキシャル / 応用光学・量子光工学 / 単一光子 / 光物性 / 半導体物性 / 化合物半導体 / 太陽電池 / フォトルミネッセンス / 電子顕微鏡 / 転位 / 点欠陥 / 劣化 / 光照射 / 欠陥 / 希釈窒化物半導体 / 等電子トラップ / 原子層ドーピング / 励起子分子 / 応用光学・量子光光学 / 量子もつれ光子対 / 量子光学 / 半導体 / MBE,エピタキシャル / 結晶工学 / エピタキシャル / 応用光学・量子光工学MBE Less

Improvement of the efficiency of photovoltaic cells using two-step optical absorption through band tail states
- Principal Investigator
  
  矢口裕之
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Saitama University
A novel stacked structure of intermediate band cells for higher efficiencyPrincipal Investigator
- Principal Investigator
  
  八木修平
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Saitama University
Research on high-efficiency intermediate band tandem solar cells based on dilute nitride alloysPrincipal Investigator
- Principal Investigator
  
  Shuhei Yagi
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Fund for the Promotion of Joint International Research (Fostering Joint International Research)
- Research Field
  
  Design and evaluation of sustainable and environmental conscious system
- Research Institution
  Saitama University
Study of multi-band solar cells using dilute nitride semiconductorsPrincipal Investigator
- Principal Investigator
  
  Yagi Shuhei
- Project Period (FY)
  2016 – 2019
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Design and evaluation of sustainable and environmental conscious system
- Research Institution
  Saitama University
Study on the Behavior of Defects in Dilute Nitride Semiconductors and Improvement of Device Reliability
- Principal Investigator
  
  Ueda Osamu
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Kanazawa Institute of Technology
Generation and control of quantum correlated photons from atomic-layer doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Single Photon Generation from locally doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University

All 2023 2022 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 Other

All Journal Article Presentation

[Journal Article] Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells2023
- Author(s)
  Shuhei Yagi, Shun Numata, Yasushi Shoji, Yoshitaka Okada and Hiroyuki Yaguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SK Pages: SK1008-SK1008
- DOI
  10.35848/1347-4065/acbf5e
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04211
[Journal Article] Spectral change of E－ band emission in a GaAs:N δ-doped superlattice due to below-gap excitation and its discrimination from thermal activation2020
- Author(s)
  Md. D. Haque, N. Kamata, A.Z.M.T. Islam, S. Yagi, and H. Yaguchi
- Journal Title
  
  J. Electronic Materials
  
  Volume: 49 Issue: 2 Pages: 1550-1555
- DOI
  10.1007/s11664-019-07856-6
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17KK0127, KAKENHI-PROJECT-16H05895
[Journal Article] Detection of nonradiative recombination centers in GaPN (N:0.105%) by below-gap excitation light2020
- Author(s)
  S. Ferdous, N. Kamata, S. Yagi, and H. Yaguchi
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 257 Issue: 2 Pages: 1900377-1900377
- DOI
  10.1002/pssb.201900377
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17KK0127, KAKENHI-PROJECT-19H02612
[Journal Article] Photoluminescence intensity change of GaP1-xNx alloys by laser irradiation2020
- Author(s)
  Sultan Md. Zamil、Shiroma Akinori、Yagi Shuhei、Takamiya Kengo、Yaguchi Hiroyuki
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 9 Pages: 095302-095302
- DOI
  10.1063/5.0020793
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02612, KAKENHI-PROJECT-17KK0127
[Journal Article] Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure2019
- Author(s)
  Haque Md Dulal、Kamata Norihiko、Islam A.Z.M. Touhidul、Honda Zentaro、Yagi Shuhei、Yaguchi Hiroyuki
- Journal Title
  
  Optical Materials
  
  Volume: 89 Pages: 521-527
- DOI
  10.1016/j.optmat.2019.01.047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17KK0127, KAKENHI-PROJECT-16H05895
[Journal Article] Nonradiative recombination centers in GaAs:N δ-doped superlattice revealed by two-wavelength-excited photoluminescence2018
- Author(s)
  Dulal Haque Md.、Kamata Norihiko、Fukuda Takeshi、Honda Zentaro、Yagi Shuhei、Yaguchi Hiroyuki、Okada Yoshitaka
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 16 Pages: 161426-161426
- DOI
  10.1063/1.5011311
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17KK0127, KAKENHI-PROJECT-16H05895
[Journal Article] Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates2017
- Author(s)
  K. Ishii, S. Yagi, and H. Yaguchi
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 254 Issue: 2 Pages: 1600542-1600542
- DOI
  10.1002/pssb.201600542
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-26390057
[Journal Article] Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation2016
- Author(s)
  N. Kamata, M. Suetsugu, D. Haque, S. Yagi, H. Yaguchi, F. Karlsson, P.O. Holtz
- Journal Title
  
  Physica Stat. Solidi. B
  
  Volume: 254 Issue: 2 Pages: 1600566-1600566
- DOI
  10.1002/pssb.201600566
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895, KAKENHI-PROJECT-26390057
[Journal Article] Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy2015
- Author(s)
  R. G. Jin, S. Yagi, Y. Hijikata, and H. Yaguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 5 Pages: 051201-051201
- DOI
  10.7567/jjap.54.051201
- NAID
  210000145121
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360004, KAKENHI-PROJECT-26390057
[Journal Article] Control of intermediate-band configulation in GaAs:N δ-doped superlattice2015
- Author(s)
  K. Osada, T. Suzuki, S. Yagi, S. Naitoh, Y. Shoji, Y. Y. Hijikata, Y. Okada, and H. Yaguchi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 8S1 Pages: 08KA04-08KA04
- DOI
  10.7567/jjap.54.08ka04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390057, KAKENHI-PROJECT-25286048
[Journal Article] Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices2015
- Author(s)
  T. Suzuki, K. Okada, S. Yagi, S. Naitoh, Y. Shoji, Y. Hijikata, Y. Okada, and H. Yaguchi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 54 Issue: 8S1 Pages: 08KA07-08KA07
- DOI
  10.7567/jjap.54.08ka07
- NAID
  210000145536
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390057, KAKENHI-PROJECT-25286048
[Journal Article] Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys2014
- Author(s)
  W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 211 Issue: 4 Pages: 752-755
- DOI
  10.1002/pssa.201300462
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360004, KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-26390057
[Journal Article] Enhanced optical absorption due to E+-related band transition in GaAs:N2014
- Author(s)
  S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H.
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 10 Pages: 102301-102301
- DOI
  10.7567/apex.7.102301
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-26390057
[Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2013
- Author(s)
  RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 85-87
- DOI
  10.1016/j.jcrysgro.2012.12.043
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013
- Author(s)
  Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
- Journal Title
  
  THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
  
  Volume: 1566 (1) Pages: 538-539
- DOI
  10.1063/1.4848523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K. Takamiya, Y.Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: Vol.706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H. Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs2012
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 5 Issue: 11 Pages: 111201-111201
- DOI
  10.1143/apex.5.111201
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-20104004, KAKENHI-PROJECT-23360135, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Presentation] Photocurrent enhancement by below bandgap excitation in GaPN2022
- Author(s)
  Abdul Qayoom, Sanjida Ferdous, Shuhei Yagi and Hiroyuki Yaguchi
- Organizer
  33rd International Photovoltaic Science and Engineering Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04211
[Presentation] Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells2022
- Author(s)
  Shuhei Yagi, Shun Numata, Yasushi Shoji, Yoshitaka Okada and Hiroyuki Yaguchi
- Organizer
  33rd International Photovoltaic Science and Engineering Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04211
[Presentation] GaPN混晶のアップコンバージョン発光へのバンドギャップエネルギーを超える励起光の影響2020
- Author(s)
  相良鋼、高宮健吾、八木修平、矢口裕之
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] 中間バンド型GaPN混晶のキャリア再結合過程の光学的評価：窒素濃度1.4%と3.2%の比較2020
- Author(s)
  岩井広樹、フェルドスサンジーダ、鎌田憲彦、八木修平、矢口裕之
- Organizer
  第61回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] Optical Detection of Nonradiative Recombination Levels via Intermediate Band in GaAs:N δ-Doped Superlattices2019
- Author(s)
  N. Kamata, K. Nagata, Md. D. Haque, Z. Honda, S. Yagi, H. Yaguchi, and Y. Okada
- Organizer
  30th International Conference on Defects in Semiconductors (ICDS30)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Upconversion Luminescence from GaPN Alloys with Various N Compositions2019
- Author(s)
  K. Takamiya, W. Takahashi, S. Yagi, N. Kamata, Y. Hazama, H. Akiyama, and H. Yaguchi
- Organizer
  7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] 窒素δ-ドープGaAs超格子の二波長励起フォトルミネッセンス法によるキャリア再結合準位評価2019
- Author(s)
  永田航太, 鎌田憲彦, 八木修平, 矢口裕之
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] (111)基板上に作製した窒素δドープGaAs中の単一等電子トラップによる励起子分子発光2019
- Author(s)
  高岡祥平、高宮健吾、八木修平、挟間優治、秋山英文、矢口裕之
- Organizer
  第80回応用物理学会秋季学術講演会, 札幌
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] InGaAs:N δドープ超格子の電気特性評価2019
- Author(s)
  米野龍司、宮下直也、岡田至崇、八木修平、矢口裕之
- Organizer
  第80回応用物理学会秋季学術講演会, 札幌
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Optical Detection of Nonradiative Recombination Levels via Intermediate Band in GaAs:N δ-Doped Superlattices2019
- Author(s)
  N. Kamata, K. Nagata, Md. D. Haque, Z. Honda, S. Yagi, H. Yaguchi, and Y. Okada
- Organizer
  30th International Conference on Defects in Semiconductors (ICDS30)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] Optical Characterization of Nonradiative Centers in GaAs:N δ-Doped Superlattices by Using Below-Gap Excitation Light2019
- Author(s)
  M.D. Haque, N. Kamata, A.Z.M.T. Islam, Md. Julkarnain, S. Yagi, H. Yaguchi, and Y. Okada
- Organizer
  International Conference on Computer, Communication, Chemical, Materials and Electronic Engineering (IC4ME2)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] 窒素δ-ドープGaAs超格子の二波長励起フォトルミネッセンス法によるキャリア再結合準位評価2019
- Author(s)
  永田航太、鎌田憲彦、八木修平、矢口裕之
- Organizer
  第80回応用物理学会秋季学術講演会, 札幌
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Optical Characterization of Nonradiative Centers in GaAs:N δ-Doped Superlattices by Using Below-Gap Excitation Light2019
- Author(s)
  M.D. Haque, N. Kamata, A.Z.M.T. Islam, Md. Julkarnain, S. Yagi, H. Yaguchi, and Y. Okada
- Organizer
  International Conference on Computer, Communication, Chemical, Materials and Electronic Engineering (IC4ME2), Rajshahi
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Photoluminescence Intensity Change of GaPN by Laser Irradiation2019
- Author(s)
  S. Md. Zamil, A. Shiroma, S. Yagi, K. Takamiya, and H. Yaguchi
- Organizer
  7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] InGaAs:N δドープ超格子の電気特性評価2019
- Author(s)
  米野龍司, 宮下直也, 岡田至崇, 高宮健吾, 矢口裕之, 八木修平
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] Growth of InGaAs:Nδ-doped superlattices for multi-junction solar cells2018
- Author(s)
  Shumpei Umeda, Shuhei Yagi, Naoya Miyashita, Yoshitaka Okada, Hiroyuki Yaguchi
- Organizer
  2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] 二波長励起PL測定によるGaPN混晶のアップコンバージョン発光特性評価2018
- Author(s)
  高橋渉、高宮健吾、八木修平、狭間優治、秋山英文、矢口裕之、鎌田憲彦
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] 二波長励起PL測定によるGaPN混晶のアップコンバージョン発光特性評価2018
- Author(s)
  橋渉、高宮健吾、八木修平、狭間優治、秋山英文、矢口裕之、鎌田憲彦
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] 第一原理計算によるGaAsN混晶中のN原子配置のバンド構造への影響の検討2018
- Author(s)
  塚原悠太、八木修平、矢口裕之
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Growth of InGaAs:N δ-doped superlattices for multi-junction solar cells2018
- Author(s)
  Shumpei Umeda, Shuhei Yagi, Naoya Miyashita, Yoshitaka Okada, Hiroyuki Yaguchi
- Organizer
  2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] 第一原理計算によるGaAsN混晶中のN原子配置のバンド構造への影響の検討2018
- Author(s)
  塚原悠太、八木修平、矢口裕之
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17KK0127
[Presentation] First-Principles Study of Optical Transitions in Gallium Arsenide:Nitrogen Delta-Doped Superlattices2017
- Author(s)
  Hiroki Yoshikawa, Shuhei Yagi, Hiroyuki Yaguchi
- Organizer
  27th International Photovoltaic Science and Engineering Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Nanostructured Dilute Nitride Alloys for High-Efficiency Solar Cells2017
- Author(s)
  Shuhei Yagi, Yoshitaka Okada, and Hiroyuki Yaguchi
- Organizer
  International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] 希釈窒化物半導体中の窒素原子配置によるバンドギャップへの影響2017
- Author(s)
  宮島数喜、八木修平、庄司靖、岡田至崇、矢口裕之
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] 1 eV帯InGaAs:N δドープ超格子の作製2017
- Author(s)
  梅田俊平, 八木修平, 宮下直也, 岡田至崇, 矢口裕之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Properties of Dilute Nitride Pseudo-Alloys Grown using a Nitrogen Delta-Doping Technique2017
- Author(s)
  S. Yagi, Y. Okada and H. Yaguchi
- Organizer
  SPIE Photonics West 2017
- Place of Presentation
  San Francisco　（USA）
- Year and Date
  2017-01-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] GaPN混晶のアップコンバージョン発光2017
- Author(s)
  高橋渉、高宮健吾、八木修平、伊藤隆、秋山英文、矢口裕之
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Influence of Nitrogen Atomic Arrangement in GaAsN Alloys on Band Gap Energy2017
- Author(s)
  Kazuki Miyajima, Shuhei Yagi, Yasushi Shoji, Yoshitaka Okada, Hiroyuki Yaguchi
- Organizer
  27th International Photovoltaic Science and Engineering Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] n型GaAs:N δドープ超格子の電気的特性評価2017
- Author(s)
  加藤諒, 八木修平, 岡田至崇, 矢口裕之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Electrical characterization of n-type GaAs:N δ-doped superlattices2017
- Author(s)
  Ryo Kato, Shuhei Yagi, Yoshitaka Okada, and Hiroyuki Yaguchi
- Organizer
  Compound Semiconductor Week 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] レーザ照射によるGaInNAs半導体の発光効率への影響2016
- Author(s)
  米倉成一、高宮健吾、八木修平、上田修、矢口裕之
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Effect of Carrier Blocking Layer on Carrier Collection in Intermediate-Band Solar Cells using GaAs:N Delta-Doped Superlattice2016
- Author(s)
  T. Suzuki, S. Yagi, Y. Okada, H. Yaguchi
- Organizer
  26th Photovoltaic Science and Engineering Conference (PVSEC-26)
- Place of Presentation
  Singapore
- Year and Date
  2016-10-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] Optical Characterization of Carrier Recombination Processes in GaPN by Two-Wavelength Excited Photoluminescence2016
- Author(s)
  M. Suetsugu, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, F. Karlsson, and P. -O. Holtz
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  富山国際会議場（富山県・富山市）
- Year and Date
  2016-06-27
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] レーザ照射によるGaInNAs混晶半導体の発光効率への影響2016
- Author(s)
  米倉成一, 高宮健吾, 八木修平, 上田修, 矢口裕之
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H05895
[Presentation] 第一原理計算によるInAsN混晶のバンド構造に関する研究2015
- Author(s)
  宮崎貴史, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学(神奈川県・平塚市)
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Nonradiative recombination pathway via the intermediate band in GaP1-xNx studied by below-gap excitation2015
- Author(s)
  M. Suetsugu, M. Eriksson, K. F. Karlsson, P. O. Holtz, N. Kamata, S. Yagi, and H. Yaguchi
- Organizer
  28th Int. Conf. Defects in Semiconductors
- Place of Presentation
  Espoo(Finland)
- Year and Date
  2015-07-31
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] GaAs:N δドープ超格子を有する太陽電池の二段階吸収2015
- Author(s)
  鈴木智也, 八木修平, 土方泰斗, 岡田至崇, 矢口裕之
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県・平塚市）
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Epitaxial relationship of GaN grown on GaAs (110) by RF-molecular beam2015
- Author(s)
  T. Ikarashi, M. Orihara, S. Yagi, S. Kuboya, R. Katayama, and H. Yaguchi
- Organizer
  11th Int. Conf. Nitride Semiconductors
- Place of Presentation
  Beijing(China)
- Year and Date
  2015-09-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Optical and Structural Characterization of GaAs:N δ-Doped Superlattices Grown by Molecular Beam Epitaxy2015
- Author(s)
  S. Yagi, Y. Sato, N. Ueyama, T. Suzuki, K. Osada, Y. Okada, and H. Yaguchi
- Organizer
  5th Int. Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  Hsinchu(Taiwan)
- Year and Date
  2015-09-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Lateral alignment of InN nano-scale dots grown on 4H-SiC (0001) vicinal substrates2015
- Author(s)
  S. Mori, S. Yagi, M. Orihara, K. Takamiya, and H. Yaguchi
- Organizer
  11th Int. Conf. Nitride Semiconductors
- Place of Presentation
  Beijing(China)
- Year and Date
  2015-09-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Luminescence and Quenching Properties in GaPN Revealed by Below-Gap Excitation2014
- Author(s)
  M. Suetsugu, A. Z. M. Touhidul Islam, T. Hanaoka, T. Fukuda, N. Kamata, S. Yagi, and H. Yaguchi
- Organizer
  The 14th International Symposium on the Science and Technology of Lighting
- Place of Presentation
  コモ(イタリア)
- Year and Date
  2014-06-23
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Molecular Beam Epitaxy Growth of Intermediate Band Materials Based on GaAs:N δ-Doped Superlattices2014
- Author(s)
  T. Suzuki, K. Osada, S. Yagi, S. Naito, Y. Hijikata, Y. Okada, and H. Yaguchi
- Organizer
  6th World Conference on Photovoltaic Energy Conversion
- Place of Presentation
  国立京都国際会館（京都府・京都市）
- Year and Date
  2014-11-25
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Control of Intermediate Band Configuration in GaAs:N δ-doped Superlattice2014
- Author(s)
  K. Osada, T, Suzuki, S. Yagi, S. Naito, Y. Shoji, Y. Okada, Y. Hijikata, and H. Yaguchi
- Organizer
  6th World Conference on Photovoltaic Energy Conversion
- Place of Presentation
  国立京都国際会館（京都府・京都市）
- Year and Date
  2014-11-26
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well2014
- Author(s)
  Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  モンペリエ(フランス)
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] 中間バンド型太陽電池に向けたGaAs:Nδドープ超格子のMBE成長2014
- Author(s)
  鈴木智也, 長田一輝, 八木修平, 内藤俊弥, 土方泰斗, 岡田至崇, 矢口裕之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道・札幌市）
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well2014
- Author(s)
  Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  Montpellier (France)
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定2012
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs2012
- Author(s)
  K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
- Organizer
  31st International Conference on the Physics of Semiconductors
- Place of Presentation
  スイス連邦工科大学チューリッヒ校(スイス)
- Year and Date
  2012-08-02
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] GaAs中窒素δドープ超格子のエネルギー構造評価2012
- Author(s)
  野口駿介, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 第一原理計算によるGaAsNの電子構造に対する原子配置の影響に関する研究2012
- Author(s)
  坂元圭, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光2012
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs中の窒素原子対が形成する単一の等電子トラップからの発光に対する一軸応力の影響2012
- Author(s)
  新井佑也, 星野真也, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2012
- Author(s)
  R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
- Organizer
  17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  奈良県新公会堂(奈良県)
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長2012
- Author(s)
  金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec, Canada)(招待講演)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K.Takamiya, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] GaAs(110)基板上に作製した窒素δドープGaAsにおける等電子トラップからの発光特性評価2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H.Yaguchi
- Organizer
  The 7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec,Canada)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Is oelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Organizer
  The 3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs(110)中の単一等電子トラップからの発光の偏光特性2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトリフレクタンススペクトル2010
- Author(s)
  大久保航, 石川輝, 八木修平, 土方泰斗, 吉田貞史, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs中の等電子トラップを形成する窒素原子対配列に関する研究2010
- Author(s)
  星野真也, 遠藤雄太, 福島俊之, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNにおける窒素ペアからの発光の窒素濃度依存性2010
- Author(s)
  石川輝, 八木修平, 土方泰斗, 吉田貞史, 岡野真人, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Photoreflectance Study of the Temperature Dependence of Excitonic Transitions in Dilute GaAsN Alloys
- Author(s)
  W. Okubo, S. Yagi, Y. Hijikata, K. Onabe and H. Yaguchi
- Organizer
  10th International Conference on Nitride Semiconductors 2013
- Place of Presentation
  ゲイロード・ナショナル・リゾート・アンド・コンベンション・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs
- Author(s)
  K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
- Organizer
  4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  UCLAコンファレンス・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004

1. YAGUCHI Hiroyuki (50239737)

# of Collaborated Projects: 4 results

# of Collaborated Products: 46 results
2. HIJIKATA Yasuto (70322021)

# of Collaborated Projects: 2 results

# of Collaborated Products: 30 results
3. ONABE Kentaro (50204227)

# of Collaborated Projects: 2 results

# of Collaborated Products: 27 results
4. KATAYAMA Ryuji (40343115)

# of Collaborated Projects: 2 results

# of Collaborated Products: 24 results
5. KUBOYA Shigeyuki (70583615)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
6. AKIYAMA Hidefumi (40251491)

# of Collaborated Projects: 2 results

# of Collaborated Products: 19 results
7. Ueda Osamu (50418076)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
8. IKENAGA NORIAKI (30512371)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 高宮健吾 (70739458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

YAGI Shuhei 八木 修平

八木 修平 ヤギ シュウヘイ

YAGI SHUHEI 八木 修平

Research Projects

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Co-Researchers

Improvement of the efficiency of photovoltaic cells using two-step optical absorption through band tail states

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A novel stacked structure of intermediate band cells for higher efficiencyPrincipal Investigator

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Research on high-efficiency intermediate band tandem solar cells based on dilute nitride alloysPrincipal Investigator

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Study of multi-band solar cells using dilute nitride semiconductorsPrincipal Investigator

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Study on the Behavior of Defects in Dilute Nitride Semiconductors and Improvement of Device Reliability

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Generation and control of quantum correlated photons from atomic-layer doped semiconductors

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Single Photon Generation from locally doped semiconductors

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[Journal Article] Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells2023

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[Journal Article] Spectral change of E－ band emission in a GaAs:N δ-doped superlattice due to below-gap excitation and its discrimination from thermal activation2020

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[Journal Article] Detection of nonradiative recombination centers in GaPN (N:0.105%) by below-gap excitation light2020

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[Journal Article] Photoluminescence intensity change of GaP1-xNx alloys by laser irradiation2020

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[Journal Article] Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure2019

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[Journal Article] Nonradiative recombination centers in GaAs:N δ-doped superlattice revealed by two-wavelength-excited photoluminescence2018

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[Journal Article] Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates2017

Author(s)

YAGI Shuhei 八木修平

八木修平ヤギシュウヘイ

YAGI SHUHEI 八木修平