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Harada Shunta  原田 俊太

… Alternative Names

HARADA Shunta  原田 俊太

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Researcher Number 30612460
Other IDs
  • ORCIDhttps://orcid.org/0000-0002-3076-6678
Affiliation (Current) 2022: 名古屋大学, 未来材料・システム研究所, 准教授
Affiliation (based on the past Project Information) *help 2020 – 2022: 名古屋大学, 未来材料・システム研究所, 准教授
2017 – 2019: 名古屋大学, 未来材料・システム研究所, 講師
2014 – 2016: 名古屋大学, 未来材料・システム研究所, 助教
2013 – 2014: 名古屋大学, グリーンモビリティ連携研究センター, 助教
2011 – 2013: 名古屋大学, 工学(系)研究科(研究院), 助教
2011 – 2013: 名古屋大学, 工学研究科, 助教
Review Section/Research Field
Principal Investigator
Structural/Functional materials / Science and Engineering / Basic Section 26040:Structural materials and functional materials-related / Basic Section 26060:Metals production and resources production-related / Medium-sized Section 26:Materials engineering and related fields
Except Principal Investigator
Medium-sized Section 26:Materials engineering and related fields / Applied materials science/Crystal engineering / Electronic materials/Electric materials / Crystal engineering / Medium-sized Section 30:Applied physics and engineering and related fields
Keywords
Principal Investigator
結晶成長 / 積層欠陥 / 溶液成長法 / 転位 / ステップフロー成長 / X線トポグラフィー / ステップバンチング / パワーデバイス半導体 / 格子欠陥 / 量子井戸構造 … More / 熱電変換 / シリコンカーバイト / 熱電変換材料 / 量子井戸 / 量子細線 / 部分転位分解 / 低次元電気伝導 / SiC / パワーデバイス / 再結合 / キャリア再結合 / 紫外線照射 / 炭化ケイ素 / キャリアライフタイム / X線トポグラフィ / その場観察 / 時間分解フォトルミネッセンス / ピコスケール / 原子構造制御 / マルチモルフィズム / 結晶学的せん断構造 / 酸化チタン / 面欠陥 / 熱伝導 / 構造物性 / シアー構造 / 格子振動 / コヒーレント界面 / 酸化物 / 結晶構造 / 浮遊帯域溶融法 / 強化学習 / 逆強化学習 / 自動操業 / 自動化 / 混合ガウスモデル / 機械学習 / 深層視覚運動学習 / 走査透過電子顕微鏡 / エネルギーキャリア / 超解像 / ベイズ推定 / 透過電子顕微鏡法 … More
Except Principal Investigator
結晶成長 / SiC / 結晶欠陥 / 機械学習 / シリコンカーバイド / 転位 / SiC / 溶液成長 / ドーピング / プロセスインフォマティクス / 最適化 / シミュレーション / インターカレーション / 熱伝導 / 熱制御 / 熱伝導率変化 / 熱物性 / 熱デバイス / アモルファス Less
  • Research Projects

    (12 results)
  • Research Products

    (121 results)
  • Co-Researchers

    (11 People)
  •  Complex crystal growth modeling and process design in latent space

    • Principal Investigator
      宇治原 徹
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 30:Applied physics and engineering and related fields
    • Research Institution
      Nagoya University
  •  Automatic crystal growth by visuomotor learningPrincipal Investigator

    • Principal Investigator
      原田 俊太
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 26060:Metals production and resources production-related
    • Research Institution
      Nagoya University
  •  Visualization of light elements by STEM imaging with Bayesian super-resolutionPrincipal Investigator

    • Principal Investigator
      原田 俊太
    • Project Period (FY)
      2021 – 2022
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 26:Materials engineering and related fields
    • Research Institution
      Nagoya University
  •  Thermal switching device based on thermal properties change by intercalation

    • Principal Investigator
      Ujihara Toru
    • Project Period (FY)
      2020 – 2021
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 26:Materials engineering and related fields
    • Research Institution
      Nagoya University
  •  Method of Crystal Growth Informatics

    • Principal Investigator
      Ujihara Toru
    • Project Period (FY)
      2018 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 26:Materials engineering and related fields
    • Research Institution
      Nagoya University
  •  Materials science of multi-morphism in oxides and singular structural propertiesPrincipal Investigator

    • Principal Investigator
      Harada Shunta
    • Project Period (FY)
      2018 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 26040:Structural materials and functional materials-related
    • Research Institution
      Nagoya University
  •  Active control of stacking fault in bulk SiC crystalPrincipal Investigator

    • Principal Investigator
      原田 俊太
    • Project Period (FY)
      2017 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Nagoya University
  •  In-situ observation of threading dislocation conversion in high-quality SiC growth

    • Principal Investigator
      Ujihara Toru
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Crystal engineering
    • Research Institution
      Nagoya University
  •  High-quality and Low-resistant SiC crystal

    • Principal Investigator
      Kamei Kazuhito
    • Project Period (FY)
      2013 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  Realization of quantum well structure in bulk thermoelectric semiconductor by control of the formation of stacking fault in SiCPrincipal Investigator

    • Principal Investigator
      HARADA Shunta
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Structural/Functional materials
    • Research Institution
      Nagoya University
  •  Realization of non-dislocation SiC crystal

    • Principal Investigator
      UJIHARA Toru
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Nagoya University
  •  溶液成長法によるSiC結晶の欠陥自己修復メカニズムの解明Principal Investigator

    • Principal Investigator
      原田 俊太
    • Project Period (FY)
      2011 – 2012
    • Research Category
      Grant-in-Aid for Research Activity Start-up
    • Research Field
      Structural/Functional materials
    • Research Institution
      Nagoya University

All 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 Other

All Journal Article Presentation Patent

  • [Journal Article] Geometrical design of a crystal growth system guided by a machine learning algorithm2021

    • Author(s)
      Yu Wancheng、Zhu Can、Tsunooka Yosuke、Huang Wei、Dang Yifan、Kutsukake Kentaro、Harada Shunta、Tagawa Miho、Ujihara Toru
    • Journal Title

      CrystEngComm

      Volume: 23 Pages: 2695-2702

    • DOI

      10.1039/d1ce00106j

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H03839
  • [Journal Article] Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth2021

    • Author(s)
      Dang Yifan、Zhu Can、Ikumi Motoki、Takaishi Masaki、Yu Wancheng、Huang Wei、Liu Xinbo、Kutsukake Kentaro、Harada Shunta、Tagawa Miho、Ujihara Toru
    • Journal Title

      CrystEngComm

      Volume: 23 Pages: 1982-1990

    • DOI

      10.1039/d0ce01824d

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H03839
  • [Journal Article] Ordered Arrangement of Planar Faults with Pico-Scale Perfection in Titanium Oxide Natural Superlattice2021

    • Author(s)
      Shunta Harada, Naoki Kosaka, Miho Tagawa, Toru Ujihara
    • Journal Title

      The Journal of Physical Chemistry C

      Volume: -

    • DOI

      10.1021/acs.jpcc.1c01831

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H01733
  • [Journal Article] Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation2018

    • Author(s)
      Fujie Fumihiro、Harada Shunta、Koizumi Haruhiko、Murayama Kenta、Hanada Kenji、Tagawa Miho、Ujihara Toru
    • Journal Title

      Applied Physics Letters

      Volume: 113 Pages: 012101-012101

    • DOI

      10.1063/1.5038189

    • Peer Reviewed
    • Data Source
      KAKENHI-PUBLICLY-17H05331
  • [Journal Article] Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth2016

    • Author(s)
      S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara
    • Journal Title

      Cryst. Growth Des

      Volume: 16 Pages: 6436-6439

    • DOI

      10.1021/acs.cgd.6b01107

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26246019
  • [Journal Article] Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents2016

    • Author(s)
      A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 1S Pages: 01AC01-01AC01

    • DOI

      10.7567/jjap.55.01ac01

    • NAID

      210000145949

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249034
  • [Journal Article] Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis2016

    • Author(s)
      S. Xiao, S. Harada, K. Murayama, T. Ujihara
    • Journal Title

      Cryst. Growth Des

      Volume: 16 Pages: 5136-5140

    • DOI

      10.1021/acs.cgd.6b00711

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26246019
  • [Journal Article] Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method2016

    • Author(s)
      Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 858 Pages: 57-60

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249034
  • [Journal Article] Dislocation Conversion during SiC Solution Growth for High-quality Crystals2015

    • Author(s)
      Shunta Harada, Yuji Yamamoto, Shiyu Xiao, Daiki Koike, Takuya Mutoh, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai, Miho Tagawa and Toru Ujihara
    • Journal Title

      Materials Forum

      Volume: N/A

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Journal Article] Nitrogen doping of 4H-SiC by top-seeded solution growth technique using Si-Ti solvent2014

    • Author(s)
      K. Kusunoki, K. Kamei, K. Seki, S. Harada and Toru Ujihara
    • Journal Title

      Journal of Crystal Growth

      Volume: 392 Pages: 60-65

    • DOI

      10.1016/j.jcrysgro.2014.01.044

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249034
  • [Journal Article] "Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent"2014

    • Author(s)
      S.Harada, Y.Yamamoto, S.Y.Xiao, M.Tagawa, T.Ujihara
    • Journal Title

      Materials Science Forum

      Volume: 778-780 Pages: 67-70

    • DOI

      10.4028/www.scientific.net/msf.778-780.67

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004, KAKENHI-PROJECT-24686078
  • [Journal Article] Different behavior of threading edge dislocation conversion during the solution growth of 4H–SiC depending on the Burgers vector2014

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, M. Tagawa, T. Ujihara
    • Journal Title

      Acta Materialia

      Volume: 81 Pages: 284-290

    • DOI

      10.1016/j.actamat.2014.08.027

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Journal Article] "Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC"2013

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, T. Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 740-742 Pages: 189-192

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Journal Article] "Evolution of threading screw dislocation conversion during solution growth of 4H-SiC"2013

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, M.Tagawa, T.Ujihara
    • Journal Title

      APL Materials

      Volume: 1(2) Pages: 22109-22109

    • DOI

      10.1063/1.4818357

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004, KAKENHI-PROJECT-24686078
  • [Journal Article] Reduction of Threading Screw Dislocation Density Utilizing Defect Conversion during Solution Growth of 4H-SiC2013

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, T.Ujihara
    • Journal Title

      Materials Science Forum

      Volume: 740-742 Pages: 189-192

    • DOI

      10.4028/www.scientific.net/msf.740-742.189

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004, KAKENHI-PROJECT-24686078
  • [Journal Article] "Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth"2012

    • Author(s)
      T. Ujihara, S. Kozawa, K. Seki, Alexander, Y. Yamamoto, S. Harada
    • Journal Title

      Mater. Sci. Forum

      Volume: 717-720 Pages: 351-354

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Journal Article] Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth2012

    • Author(s)
      Y.Yamamoto, K.Seki, S.Kozawa, Alexander, S.Harada, T.Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 717-720 Pages: 53-56

    • DOI

      10.4028/www.scientific.net/msf.717-720.53

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Journal Article] Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth2012

    • Author(s)
      T.Ujihara, S.Kozawa, K.Seki, Alexander, Y.Yamamoto, S.Harada
    • Journal Title

      Mater. Sci. Forum

      Volume: 717-720 Pages: 351-354

    • DOI

      10.4028/www.scientific.net/msf.717-720.351

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Journal Article] "Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth"2012

    • Author(s)
      Y. Yamamoto, K. Seki, S. Kozawa, Alexander, S. Harada, T. Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 717-720 Pages: 53-56

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Journal Article] High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth2012

    • Author(s)
      Y.Yamamoto, S.Harada, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 11 Pages: 115501-115501

    • DOI

      10.1143/apex.5.115501

    • NAID

      10031126459

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Journal Article] "High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth"2012

    • Author(s)
      Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara
    • Journal Title

      Appl. Phys. Express

      Volume: 5

    • NAID

      10031126459

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Journal Article] Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth2012

    • Author(s)
      S. Harada, K. Seki, Y. Yamamoto, C. Zhu, Y. Yamamoto, S. Arai, J. Yamasaki, N. Tanaka and T. Ujihara
    • Journal Title

      Crystal Growth & Design

      Volume: 12 Pages: 3209-3214

    • DOI

      10.1021/cg300360h

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246004
  • [Journal Article] "Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth"2012

    • Author(s)
      S. Harada, Alexander, K. Seki, Y. Yamamoto, C. Zhu, Y. Yamamoto, S. Arai, J. Yamasaki, N. Tanaka, and T. Ujihara
    • Journal Title

      Crystal Growth & Design

      Volume: 12, (6) Pages: 3209-3214

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Patent] 結晶成長条件の決定方法2018

    • Inventor(s)
      朱燦, 遠藤友樹, 原田俊太, 宇治原徹
    • Industrial Property Rights Holder
      朱燦, 遠藤友樹, 原田俊太, 宇治原徹
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Data Source
      KAKENHI-PROJECT-18H03839
  • [Presentation] 強化学習を用いた浮遊帯域溶融法による結晶成長の自動制御モデルの構築2022

    • Author(s)
      土佐 祐介, 炭谷 翔悟, 大前 遼, 原田 俊太
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01681
  • [Presentation] 面欠陥周期配列を含む自然超格子酸化チタンの構造制御と熱輸送特性2021

    • Author(s)
      原田 俊太, 小坂 直輝, 杉本 峻也, 八木 貴志, 田川 美穂, 宇治原 徹
    • Organizer
      2021年第68回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01733
  • [Presentation] 混合ガウスモデルを用いた浮遊帯域溶融法における融液状態のダイナミクス推定2021

    • Author(s)
      大前 遼, 炭谷 翔悟, 土佐 祐介, 原田 俊太
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01681
  • [Presentation] 面欠陥周期配列を含むCr添加酸化チタン多結晶の熱伝導率の温度依存性2021

    • Author(s)
      杉本 峻也, 金 柯怜, 竹内 恒博, 田川 美穂, 宇治原 徹, 原田 俊太
    • Organizer
      2021年第68回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01733
  • [Presentation] Cr添加酸化チタン結晶における面欠陥周期構造の制御2020

    • Author(s)
      杉本峻也, 田川美穂, 宇治原徹, 原田俊太
    • Organizer
      第49回結晶成長国内会議(JCCG-49)
    • Data Source
      KAKENHI-PROJECT-18H01733
  • [Presentation] Threading Screw Dislocations Conversion and Suppression of Inclusions in 3-inch 4° off-axis C-face 4H-SiC Solution Growth with Pure Si2019

    • Author(s)
      TAKAMA UNNO, CAN ZHU, SHUNTA HARADA, HARUHIKO KOIZUMI, MIHO TAGAWA, TORU UJIHARA
    • Organizer
      the International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H03839
  • [Presentation] The control of conduction type in high quality bulk solution growth of SiC2019

    • Author(s)
      Can Zhu, Shunta Harada, Miho Tagawa, Toru Ujihara
    • Organizer
      the International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H03839
  • [Presentation] SiC 溶液成長過程における転位変換現象を利用した高品質結晶成長2019

    • Author(s)
      原田俊太, 朱燦, 遠藤友樹, 小泉晴比古, 鳴海大翔, 田川美穂, 宇治原徹
    • Organizer
      日本金属学会 2019年春期講演大会
    • Data Source
      KAKENHI-PUBLICLY-17H05331
  • [Presentation] PREDICTION MODEL OF COMPUTATIONAL FLUID DYNAMICS BASED ON NEURAL NETWORK CONSTRUCTED BY MACHINE LEARNING AND PROCESS OPTIMIZATION OF SIC SOLUTION GROWTH2019

    • Author(s)
      T. Ujihara, Y. Tsunooka, H. Lin, C. Zhu, T. Narumi, K. Kutsukake, S. Harada, M. Tagawa
    • Organizer
      the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H03839
  • [Presentation] Change in thermal conductivity of amorphous WO3 films by lithium intercalation2019

    • Author(s)
      S. Harada
    • Organizer
      International conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019), Nagoya University, Nagoya
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01733
  • [Presentation] ESTIMATION OF HIGH-TEMPERATURE PHYSICAL PROPERTIES BY MACHINE LEARNING TOWARD ACCURATE NUMERICAL MODELING OF CRYSTAL GROWTH2019

    • Author(s)
      K. Ando, H. Lin, Y. Tsunooka, T. Narumi, C. Zhu, K. Kutsukake, S. Harada, K. Matsui, I. Takeuchi, Y. Koyama, Y. Kawajiri, M. Tagawa, T. Ujihara
    • Organizer
      the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H03839
  • [Presentation] 高温X線トポグラフィーによるSiC積層欠陥の挙動のその場観察2018

    • Author(s)
      原田 俊太、藤榮 文博、村山 健太、宇治原 徹
    • Organizer
      日本学術振興会 結晶成長の科学と技術 第161委員会第103回研究会「SiC単結晶技術の現状と将来」
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05331
  • [Presentation] 還元熱処理により作製した Magneli 相酸化チタンの周期構 造と熱伝導特性2018

    • Author(s)
      原田俊太, 小坂直輝, 八木貴志, 田中克志, 乾晴行, 田川美穂, 宇治原徹
    • Organizer
      日本金属学会 2018 年秋期講演(第 163 回)
    • Data Source
      KAKENHI-PROJECT-18H01733
  • [Presentation] Solution Growth of High-Quality SiC Crystals for Power Devices2018

    • Author(s)
      S. Harada
    • Organizer
      第6回日中結晶成.結晶工学討論会(日中シンポ)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05331
  • [Presentation] ルチル型TiO2単結晶への周期的な面欠陥導入に伴う熱伝導率の変化2018

    • Author(s)
      小坂直輝, 八木貴志, 田中克志, 乾晴行, 田川美穂, 宇治原徹, 原田俊太
    • Organizer
      2018年 第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01733
  • [Presentation] Thermal conduction in Magneli phase titanium oxides with an ordered arrangement of planar defects2018

    • Author(s)
      S. Harada
    • Organizer
      第30回 相変化研究会シンポジウム(PCOS2018)
    • Invited
    • Data Source
      KAKENHI-PROJECT-18H01733
  • [Presentation] Change in thermal conductivity of rutile-type TiO2 by introducing periodic planar faults2018

    • Author(s)
      N. Kosaka, T. Yagi, K. Tanaka, H. Inui, M. Tagawa, T. Ujihara, S. Harada
    • Organizer
      Nanoscale and Microscale Heat Transfer 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01733
  • [Presentation] 4H-SiC中1SSF・PD起因フォトルミネッセンス減衰時間の温度依存性2017

    • Author(s)
      片平 真哉, 市川 義人, 原田 俊太, 木本 恒暢, 加藤 正史
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05331
  • [Presentation] Decay time of photoluminescence from single Schockley stacking faults in n-type 4H-SiC2017

    • Author(s)
      Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada
    • Organizer
      International Conference on Materials and Systems for Sustainability ICMaSS2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05331
  • [Presentation] Decay Time of Photoluminescence from 1SSFs and PDs in 4H- SiC2017

    • Author(s)
      Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, Tsunenobu Kimoto
    • Organizer
      International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05331
  • [Presentation] 放射光X線トポグラフィーによる半導体結晶の欠陥評価2017

    • Author(s)
      原田俊太
    • Organizer
      基盤産業支援セミナー「結晶の分析・評価~シンクロトロン光によって見えるもの~」
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05331
  • [Presentation] The realization of high-quality 4H-SiC C-face grown crystals by controlling the macrosteps formation during solution growth2016

    • Author(s)
      S. Y. Xiao, S. Harada, P. L. Chen, K. Murayama, T.Ujihara
    • Organizer
      the 18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26246019
  • [Presentation] 透過電子顕微鏡による窒素添加 SiC 積層欠陥の高温その場観察2016

    • Author(s)
      陳 鵬磊, 原田 俊太, 荒井 重勇, 藤榮 文博, 肖 世玉, 加藤 智久, 田川 美穂, 宇治原 徹
    • Organizer
      先進パワー半導体分科会 第3回講演会
    • Place of Presentation
      つくば国際会議場
    • Year and Date
      2016-11-08
    • Data Source
      KAKENHI-PROJECT-25249034
  • [Presentation] 窒素添加した 4H-SiC における積層欠陥拡張・収縮挙動の高温その場観察2016

    • Author(s)
      藤榮 文博, 原田 俊太, 村山 健太, 花田 賢志, 陳 鵬磊, 田川 美穂, 加藤 智久, 宇治原 徹,
    • Organizer
      先進パワー半導体分科会 第3回講演会
    • Place of Presentation
      つくば国際会議場
    • Year and Date
      2016-11-08
    • Data Source
      KAKENHI-PROJECT-25249034
  • [Presentation] Control of Macrostep Structure for High-Quality SiC Grown by Liquid Phase Epitaxy2016

    • Author(s)
      T. Ujihara, C. Zhu, K. Murayama, S. Harada, M.Tagawa
    • Organizer
      the 18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26246019
  • [Presentation] SiC溶液成長における貫通転位変換と成長表面のマクロステップの関係2015

    • Author(s)
      原田 俊太, 肖 世玉, 青柳 健大, 村山 健太, 酒井 武信, 田川 美穂, 宇治原 徹
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学 湘南キャンパス、神奈川県
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] SiC溶液成長における転位伝播挙動と高品質化2015

    • Author(s)
      原田俊太
    • Organizer
      第2回グリーンエネルギー材料のマルチスケール創製研究会
    • Place of Presentation
      松江市
    • Year and Date
      2015-01-12
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] シンクロトロン X 線トポグラフィによる溶液成長 SiC 結晶の欠陥評価と高品質化2015

    • Author(s)
      原田俊太
    • Organizer
      第4回名古屋大学シンクロトロン光研究センターシンポジウム
    • Place of Presentation
      名古屋大学 坂田平田ホール、愛知県
    • Year and Date
      2015-01-22
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] Structure of basal plane defects formed by the conversion of threading screw dislocation during solution growth of SiC2014

    • Author(s)
      S. Harada, S.Y. Xiao, M. Tagawa, Y. Yamamoto, S. Arai, N. Tanaka, T. Ujihara
    • Organizer
      SSDM2014
    • Place of Presentation
      Tsukuba International Congress Center, Ibaraki, Japan
    • Year and Date
      2014-09-09
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] 高品質4H-SiC溶液成長における多形変化抑制メカニズム2014

    • Author(s)
      原田俊太, 山本祐治, 村山健太, 青柳健大, 酒井武信, 田川美穂, 宇治原徹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス, 北海道
    • Year and Date
      2014-09-17
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] Efficient Process for Ultrahigh Quality 4H-SiC Crystal Utilizing Solution Growth on Off-axis Seed Crystal2014

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Organizer
      2012 MRS Spring Meeting & Exhibit
    • Place of Presentation
      California, USA
    • Year and Date
      2014-04-10
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Correlation between Surface Morphology and Threading Dislocation Conversion in Solution Growth of SiC2014

    • Author(s)
      S. Harada S.Y. Xiao, N. Hara, D. Koike, T. Mutoh, M. Tagawa, T. Ujihara
    • Organizer
      SSDM2014
    • Place of Presentation
      Fukuoka University, Fukuoka, Japan
    • Year and Date
      2014-08-28
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] Dislocation conversion during SiC solution growth for high-quality crystal2014

    • Author(s)
      S. Harada, Y. Yamamoto, S. Xiao, N. Hara, D. Koike, T. Mutoh, M. Tagawa, T. Sakai, T. Ujihara
    • Organizer
      10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014)
    • Place of Presentation
      The congress center of the World Trade Center, Grenoble, France
    • Year and Date
      2014-09-23
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] SiC溶液成長過程における貫通転位変換現象の弾性論的考察2014

    • Author(s)
      原田俊太, 肖世玉, 村山健太, 青柳健大, 酒井武信, 田川美穂, 宇治原徹
    • Organizer
      第44回結晶成長国内会議(NCCG-44)
    • Place of Presentation
      学習院創立百周年記念会館, 東京都
    • Year and Date
      2014-11-07
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] SiC溶液成長過程における貫通転位変換現象の成長表面との相互作用による考察2014

    • Author(s)
      原田俊太, 肖世玉, 村山健太, 青柳健大, 酒井武信, 田川美穂, 宇治原徹
    • Organizer
      先進パワー半導体分科会 第1回講演会
    • Place of Presentation
      ウインクあいち、愛知県
    • Year and Date
      2014-11-19
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] Defect evolution in high-qualit 4H-SiC grown by solution method2014

    • Author(s)
      S. Harada, M. Tagawa, T. Ujihara
    • Organizer
      IUCr 2014
    • Place of Presentation
      The Palais des congres de Montreal, Montreal, Quebec, Canada
    • Year and Date
      2014-08-11
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects2013

    • Author(s)
      T.Ujihara, Y.Yamamoto, S.Harada, S.Xiao, K.Seki
    • Organizer
      ICCGE-17
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2013-08-12
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 4H-SiC 溶液成長における成長表面のステップ構造と貫通転位変換挙動の相関2013

    • Author(s)
      原田俊太, 山本祐治, 肖世玉, 堀尾篤史, 田川美穂, 宇治原徹
    • Organizer
      SiC 及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館
    • Year and Date
      2013-12-09
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “SiC溶液成長過程における基底面転位の形成”2013

    • Author(s)
      肖 世玉,原田俊太,宇治原徹
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館,埼玉県
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] "Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects"2013

    • Author(s)
      T. Ujihara, Y. Yamamoto, S. Harada, S. Xiao, K. Seki
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy(ICCGE-17)
    • Place of Presentation
      University of Warsaw, Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 4H-SiC溶液成長における成長表面のステップ構造と貫通転位変換挙動の相関2013

    • Author(s)
      原田俊太、山本祐治、肖世玉、堀尾篤史、田川美穂、宇治原徹
    • Organizer
      第22回SiC講演会
    • Place of Presentation
      埼玉会館
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] Control of dislocation conversion during solution growth by changing surface step structure2013

    • Author(s)
      S.Harada, Y.Yamamoto, S. Xiao, A. Horio, M.Tagawa, T.Ujihara
    • Organizer
      ICSCRM 2013
    • Place of Presentation
      Phoenix Seagia Resort, Miyazaki
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] SiC溶液成長における欠陥変換挙動と高品質結晶成長2013

    • Author(s)
      原田俊太
    • Organizer
      表面技術協会 関東支部・第86回講演会「ひらめき・未来材料~進化する選択的物質貯蔵・輸送・分離・変換材料~
    • Place of Presentation
      信州大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] "Control of Dislocation Conversion during Solution Growth by Changing Surface Step Structure"2013

    • Author(s)
      S. Harada, Y. Yamamoto, S. Xiao, A. Horio, M. Tagawa, T. Ujihara
    • Organizer
      the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
    • Place of Presentation
      Phoenix Seagaia Resort, Miyazaki, Japan
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “4H-SiC溶液成長過程における貫通らせん転位変換により形成する欠陥の微細構造”2013

    • Author(s)
      原田俊太,國松亮太,田川美穂,山本悠太,荒井重勇,田中信夫,宇治原徹
    • Organizer
      公益社団法人応用物理学会 2012年春季 第60回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 4H-SiC 溶液成長過程における貫通転位変換挙動と成長表面モフォロジーの相関2013

    • Author(s)
      原田俊太, 山本祐治, 肖世玉, 堀尾篤史, 田川美穂, 宇治原徹
    • Organizer
      日本結晶成長学会 第43回結晶成長国内会議
    • Place of Presentation
      長野市生涯学習センター
    • Year and Date
      2013-11-07
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 溶液成長過程における貫通らせん転位変換により形成する基底面欠陥の微細構造2013

    • Author(s)
      原田俊太
    • Organizer
      2013年春季第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-28
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] "Increase in the Growth Rate by Rotating the Seed Crystal at a High Speed during the Solution Growth of SiC"2013

    • Author(s)
      T. Umezaki, D. Koike, S. Harada, T. Ujihara
    • Organizer
      the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
    • Place of Presentation
      Phoenix Seagaia Resort, Miyazaki, Japan
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Increase in the Growth Rate by Rotating the Seed Crystal at a High Speed during the Solution Growth of SiC2013

    • Author(s)
      T.Umezaki, D.Koike, S.Harada, T.Ujihara
    • Organizer
      ICSCRM2013
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2013-09-30
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “高品質SiC溶液成長”2013

    • Author(s)
      宇治原徹, 原田俊太
    • Organizer
      一般社団法人資源・素材学会 平成25年度春季大会
    • Place of Presentation
      千葉工業大学津田沼キャンパス, 千葉県
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Structure of basal plane defects formed by threading screw dislocation conversion during high quality SiC solution growth2013

    • Author(s)
      S.Harada, R.Kunimatsu, S. Xiao, Y.Yamamoto, M.Tagawa, Y.Yamamoto, S.Arai, N.Tanaka, T.Ujihara
    • Organizer
      ISETS '13
    • Place of Presentation
      Nagoya University
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] “SiC溶液成長過程における基底面転位の形成”2013

    • Author(s)
      肖世玉,朱燦,原田俊太,宇治原徹
    • Organizer
      2013年 第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス, 京都府
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Control of Dislocation Conversion during Solution Growth by Changing Surface Step Structure2013

    • Author(s)
      S.Harada, Y.Yamamoto, S.Xiao, A.Horio, M.Tagawa, T.Ujihara
    • Organizer
      ICSCRM2013
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2013-09-30
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 4H-SiC溶液成長過程における貫通転位変換挙動と成長表面モフォロジーの相関2013

    • Author(s)
      原田俊太,山本祐治,肖世玉,堀尾篤史、田川美穂,宇治原徹
    • Organizer
      第43回結晶成長国内会議
    • Place of Presentation
      長野市生涯学習センター
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] Evolution of threading screw dislocation conversion during solution growth of 4H-SiC2013

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, M.Tagawa, T.Ujihara
    • Organizer
      ICCGE-17
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2013-08-15
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 4H-SiC 溶液成長過程における貫通らせん転位変換により形成する欠陥の微細構造2013

    • Author(s)
      原田俊太, 國松亮太, 田川美穂, 山本悠太, 荒井重勇, 田中信夫, 宇治原徹
    • Organizer
      応用物理学会 2012年春季 第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-28
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “4H-SiC溶液成長過程における貫通転位変換挙動と成長表面モフォロジーの相関”2013

    • Author(s)
      原田俊太,山本祐治,肖世玉,堀尾篤史, 田川美穂,宇治原徹
    • Organizer
      日本結晶成長学会 第43回結晶成長国内会議(NCCG-43)
    • Place of Presentation
      長野市生涯学習センター (TOiGO内), 長野県
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “4H-SiC溶液成長における成長表面のステップ構造と貫通転位変換挙動の相関”2013

    • Author(s)
      原田俊太,山本祐治,肖世玉,堀尾篤史,田川美穂,宇治原徹
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館,埼玉県
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] "Structure of basal plane defects formed by threading screw dislocation conversion during high quality SiC solution growth"2013

    • Author(s)
      S.Harada, R.Kunimatsu, Xiao Shiyu, Y.Yamamoto, M.Tagawa, Y.Yamamoto, S.Arai, N.Tanaka, T.Ujihara
    • Organizer
      ISETS '13
    • Place of Presentation
      Nagoya University, Nagoya
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] SiC 溶液成長過程における基底面転位の形成2013

    • Author(s)
      肖世玉, 原田俊太, 宇治原徹
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館
    • Year and Date
      2013-12-09
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] "Evolution of threading screw dislocation conversion during solution growth of 4H-SiC"2013

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, T. Ujihara
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
    • Place of Presentation
      University of Warsaw, Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “SiC溶液成長過程における貫通転位変換と成長表面のステップ構造”2013

    • Author(s)
      原田俊太,山本祐治,肖世玉,堀尾篤史,田川美穂,宇治原徹
    • Organizer
      2013年 第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス, 京都府
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 高品質SiC 溶液成長2013

    • Author(s)
      宇治原徹, 原田俊太
    • Organizer
      資源・素材学会 平成25年度春季大会
    • Place of Presentation
      千葉工業大学
    • Year and Date
      2013-03-30
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] SiC 溶液成長過程における貫通転位変換と成長表面のステップ構造2013

    • Author(s)
      原田俊太, 山本祐治, 肖世玉, 堀尾篤史, 田川美穂, 宇治原徹
    • Organizer
      2013年第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Year and Date
      2013-09-18
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Evolution of threading screw dislocation conversion during solution growth of 4H-SiC2013

    • Author(s)
      S.Harada, Y.Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M.Tagawa, T.Ujihara
    • Organizer
      ICCGE-17
    • Place of Presentation
      Warsaw university
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] Structure of basal plane defects formed by threading screw dislocation conversion during high quality SiC solution growth2013

    • Author(s)
      S.Harada, R.Kunimatsu, Xiao Shiyu, Y.Yamamoto, M.Tagawa, Y.Yamamoto, S.Arai, N.Tanaka, T.Ujihara
    • Organizer
      ISETS '13
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2013-12-14
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] SiC溶液成長過程における基底面転位の形成2013

    • Author(s)
      肖世玉, 朱燦, 原田俊太, 宇治原徹
    • Organizer
      2013年第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Year and Date
      2013-09-18
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] "Evolution of Threading Edge Dislocation During Solution Growth of SiC"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM2012)
    • Place of Presentation
      Kyoto International Conference Center, Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 透過電子顕微鏡法によるSiC溶液成長における欠陥挙動解析2012

    • Author(s)
      原田俊太
    • Organizer
      SiC及び関連ワイドギャップ半導体研究会第21回講演会
    • Place of Presentation
      大阪市中央公会堂
    • Year and Date
      2012-11-20
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] “Si-C-X溶媒を用いたSiC溶液成長における結晶化多形の熱力学的考察”2012

    • Author(s)
      堀尾篤史, 原田俊太,宇治原徹
    • Organizer
      SiC及び関連ワイド ギャップ半導体研究会 第21回講演会
    • Place of Presentation
      大阪市中央公会堂, 大阪府
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Efficient process for ultrahigh quality 4H-SiC crystal utilizing solution growth on off-axis seed crystal2012

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Organizer
      Materials research society 2012 spring meeting
    • Place of Presentation
      San Francisco (USA)
    • Year and Date
      2012-04-10
    • Data Source
      KAKENHI-PROJECT-23860025
  • [Presentation] Evolution of Threading Edge Dislocation During Solution Growth of SiC2012

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Organizer
      SSDM2012
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2012-09-25
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Reduction of threading screw dislocation density utilizing defect conversion during solution growth of 4H-SiC2012

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, T.Ujihara
    • Organizer
      ECSCRM-2012
    • Place of Presentation
      Saint-Petersburg, Russia
    • Year and Date
      2012-09-04
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “4H-SiC溶液成長における貫通刃状転位の選択的変換”2012

    • Author(s)
      原田俊太, 山本祐治, 関 和明, 堀尾篤史, 三橋貴仁, 宇治原徹
    • Organizer
      公益社団法人 応用物理学会 2012年秋季 第73回 応用物理学関係連合講演会
    • Place of Presentation
      愛媛大学城北地区, 愛媛県
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 一方向の溶液流れ下におけるSiC のステップバンチングの挙動2012

    • Author(s)
      朱燦, 原田俊太, 関和明, 新家寛正, 田川美穂, 宇治原徹
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学
    • Year and Date
      2012-11-10
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography2012

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Organizer
      IUMRS-ICEM2012
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2012-09-25
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 溶液法による高品質SiC 結晶成長メカニズム2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 田川美穂, 宇治原徹
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学
    • Year and Date
      2012-11-09
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 溶液法による超高品質SiC 結晶成長2012

    • Author(s)
      宇治原徹, 原田俊太, 山本祐治, 関和明
    • Organizer
      日本セラミックス協会 第25回秋季シンポジウム
    • Place of Presentation
      名古屋大学
    • Year and Date
      2012-09-19
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Si-C-X溶媒を用いたSiC 溶液成長における結晶化多形の熱力学的考察2012

    • Author(s)
      堀尾篤史, 原田俊太, 宇治原徹
    • Organizer
      SiC 及び関連ワイドギャップ半導体研究会 第21回講演会
    • Place of Presentation
      大阪市中央公会堂
    • Year and Date
      2012-11-19
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Possibility for elimination of dislocations in SiC crystal : conversion of threading edge dislocations by solution growth2012

    • Author(s)
      原田俊太
    • Organizer
      ECSCRM 2012
    • Place of Presentation
      Russia, Saint-Peterburg
    • Year and Date
      2012-09-05
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] "Effect of surface polarity on the conversion of threading dislocations in solution growth"2012

    • Author(s)
      Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
    • Organizer
      The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)
    • Place of Presentation
      Hotel Saint Petersburg, Saint-Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “一方向の溶液流れ下におけるSiCのステップバンチングの挙動”2012

    • Author(s)
      朱燦, 原田俊太, 関和明, 新家寛正, 田川美穂, 宇治原徹
    • Organizer
      第42回結晶成長国内会議 (NCCG-42)
    • Place of Presentation
      九州大学, 福岡県
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] SiC溶液成長における貫通らせん転位低減の促進2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 宇治原徹
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-23860025
  • [Presentation] SiC溶液成長における窒素ドープによる積層欠陥の形成2012

    • Author(s)
      原田俊太
    • Organizer
      第42回日本結晶成長学会 NCCG-42
    • Place of Presentation
      九州大学
    • Year and Date
      2012-11-10
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] "Efficient Process for Ultrahigh Quality 4H-SiC Crystal Utilizing Solution Growth on Off-axis Seed Crystal"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
    • Organizer
      2012 MRS Spring Meeting & Exhibit
    • Place of Presentation
      Moscone West Convention Center Martiott Marquis San Francisco, California, USA
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Possibility for elimination of dislocations in SiC crystal : conversion of threading edge dislocations by solution growth2012

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, C.Zhu, M.Tagawa, T.Ujihara
    • Organizer
      ECSCRM-2012
    • Place of Presentation
      Saint-Petersburg, Russia
    • Year and Date
      2012-09-04
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 4H-SiC 溶液成長における貫通刃状転位の選択的変換2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 宇治原徹
    • Organizer
      応用物理学会 2012年秋季 第73回応用物理学関係連合講演会
    • Place of Presentation
      愛媛大学
    • Year and Date
      2012-09-12
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] "Possibility for elimination of dislocations in SiC crystal: conversion of threading edge dislocations by solution growth"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, C. Zhu, M. Tagawa, T. Ujihara
    • Organizer
      The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)
    • Place of Presentation
      Hotel Saint Petersburg, Saint-Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “溶液法による高品質SiC結晶成長メカニズム”2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 田川美穂, 宇治原徹
    • Organizer
      第42回結晶成長国内会議 (NCCG-42)
    • Place of Presentation
      九州大学, 福岡県
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] "Reduction of threading screw dislocation density utilizing defect conversion during solution growth of 4H-SiC"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, T. Ujihara
    • Organizer
      The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)
    • Place of Presentation
      Hotel Saint Petersburg, Saint-Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] “溶液法による超高品質SiC結晶成長”2012

    • Author(s)
      宇治原徹, 原田俊太,山本祐治, 関 和明
    • Organizer
      公益社団法人日本セラミックス協 会 第25回秋季シンポジウム
    • Place of Presentation
      名古屋大学, 愛知県
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] 溶液成長過程における貫通転位変換を利用した高品質4H-SiC の実現2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 田川美穂, 宇治原徹
    • Organizer
      SiC 及び関連ワイドギャップ半導体研究会 第21回講演会
    • Place of Presentation
      大阪市中央公会堂
    • Year and Date
      2012-11-09
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography2012

    • Author(s)
      原田俊太
    • Organizer
      IUMRS-ICEM 2012
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2012-09-23
    • Data Source
      KAKENHI-PROJECT-24686078
  • [Presentation] “溶液成長過程における貫通転位変換を利用した高品質4H-SiCの実現”2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 田川美穂, 宇治原徹
    • Organizer
      SiC及び関連ワイド ギャップ半導体研究会 第21回講演会
    • Place of Presentation
      大阪市中央公会堂, 大阪府
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] "Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara
    • Organizer
      International Union of Materials Research Societies International Conference on Electronic Materials (IUMRS-ICEM2012)
    • Place of Presentation
      PACIFICO YOKOHAMA, Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] Effect of surface polarity on the conversion of threading dislocations in solution growth2012

    • Author(s)
      Y.Yamamoto, S.Harada, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Organizer
      ECSCRM-2012
    • Place of Presentation
      Saint-Petersburg, Russia
    • Year and Date
      2012-09-04
    • Data Source
      KAKENHI-PROJECT-23246004
  • [Presentation] N-Type Doping of 4H-SiC by the Top-Seeded Solution Growth Technique

    • Author(s)
      K. Kusunoki, K. Kamei, K. Seki, S. Harada, and T. Ujihara
    • Organizer
      the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
    • Place of Presentation
      宮崎、日本
    • Year and Date
      2013-09-29 – 2013-10-04
    • Data Source
      KAKENHI-PROJECT-25249034
  • 1.  UJIHARA Toru (60312641)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 76 results
  • 2.  KATO Masashi (80362317)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 3 results
  • 3.  岡野 泰則 (90204007)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  SASAKI Katsuhiro (00211938)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  Kamei Kazuhito (10527576)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 6.  田渕 雅夫 (90222124)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  佐藤 正英 (20306533)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  沓掛 健太朗 (00463795)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  烏山 昌幸 (40628640)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  河村 貴宏 (80581511)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  田中 信夫
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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