Ujihara Toru 宇治原徹

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UJIHARA Toru 宇治原徹

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Researcher Number	60312641
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Affiliation (Current)	2025: 名古屋大学, 未来材料・システム研究所, 教授
Affiliation (based on the past Project Information) *help	2018 – 2024: 名古屋大学, 未来材料・システム研究所, 教授 2014 – 2016: 名古屋大学, 未来材料・システム研究所, 教授 2013 – 2014: 名古屋大学, グリーンモビリティ連携研究センター, 教授 2013: 名古屋大学, 工学研究科, 教授 2011 – 2013: 名古屋大学, 工学(系)研究科(研究院), 教授 … More 2010 – 2011: 名古屋大学, 大学院・工学研究科, 教授 2010 – 2011: 名古屋大学, 工学研究科, 教授 2008 – 2009: Nagoya University, 工学研究科, 准教授 2006 – 2009: Nagoya University, 大学院・工学研究科, 准教授 2006: 名古屋大学, 大学院工学系研究科, 助教授 2005 – 2006: 名古屋大学, 大学院工学研究科, 助教授 2004 – 2005: 名古屋大学, 大学院・工学研究科, 助教授 2003 – 2005: 名古屋大学, 大学院・工学系研究科, 助教授 1999 – 2003: 東北大学, 金属材料研究所, 助手 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Medium-sized Section 30:Applied physics and engineering and related fields / Crystal engineering / Medium-sized Section 26:Materials engineering and related fields / Electronic materials/Electric materials / Biological Sciences / Applied materials science/Crystal engineering / Condensed matter physics I Except Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering … More / Electronic materials/Electric materials / Medium-sized Section 27:Chemical engineering and related fields / Particle/Nuclear/Cosmic ray/Astro physics / Physical properties of metals / Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties / Science and Engineering Less
Keywords	Principal Investigator 結晶成長 / 半導体デバイス / 相分離構造 / 脂質二重膜 / SiC / 半導体 / 熱制御 / 光電子分光 / 熱物性 / インターカレーション … More / シミュレーション / 機械学習 / バンド構造 / 結晶欠陥 / バイオデバイス / 歪み / 太陽電池 / 化合物 / マルチフィジクスシミュレーション / 酸化物 / 熱スイッチ / 熱伝導率 / アモルファス / 熱デバイス / 熱伝導率変化 / 熱伝導 / 最適化 / プロセスインフォマティクス / 半導体物性 / 光電子分光法 / 高効率太陽光発電材料・素子 / 高効率太陽光発電材料・素子 / 溶液成長 / ＳｉＣ / 転位 / シリコンカーバイド / プラズマ / ラフト構造 / 膜タンパク質 / 有機金属気相成長法 / スピン偏極 / 超格子構造 / 線形加速器 / 半導体フォトカソード / 量子構造 / エッチング / パターン形成 / ナノテクノロジー / ゲルマニウム / シリコン / 複合材料 / その場測定 / 組成分布測定 / 蛍光X線分析 / 相互拡散 / 半導体溶液 / 金属溶液 / 拡散係数 … More Except Principal Investigator 結晶成長 / その場観察 / SiGe / シリコンゲルマニウム / InGaAsN / 溶質元素補給ゾーン成長法 / X線回折 / その場測定 / ヨハンソン分光結晶 / 混晶半導体 / 炭化ケイ素 / ベイズ最適化 / PINNs / 人工知能 / 数値流体解析 / 数値解析 / 半導体 / 情報学 / 移動速度論 / Extremely high vacuum technology / Field emission dark current / Negative Electron Affinity (NEA) / Spin polarization / ERL accelerator / Linear collider / Electron source / Emittance / フォトカソード / 超高真空 / ピコ秒レーザー / GaAs / 電界放出型偏極電子源 / 正の電子親和性(PEA) / Pepper-Pot法 / 電極間暗電流 / 超高真空環境 / 200keV直流型電子銃 / 負の電子親和性(NEA)表面 / 低エミッタンス / ERL(Energy Recovery Linac) / 電子・陽電子リニアコライダー / tip状-GaAsフォトカソード / NEA-GaAsフォトカソード / 偏極電子源 / 低エミッタンス電子源 / ビームエミッタンス / 極高真空技術 / 電界放出暗電流 / 負の電子親和性表面 / スピン偏極電子 / ERL加速器 / リニアコライダー / 電子源 / エミッタンス / resonant tunneling / strained Si / floating zone growth / multicomponent zone-melting method / multicomponent bulk crystal / ヘテロ構造 / 歪み / 優先成長方位 / フローティングゾーン成長法 / 分子線エピタキシー / 逆格子空間マッピング / 共鳴トンネル / 歪みシリコン / フローティングゾーン成長 / 溶質元素補給成長法 / バルク結晶 / Two-dimensional hole gas / Modulation doping / Strain-controlled thin film / Multicomponent Zone-melting Method / Molecular Beam Epitaxy / Silicon Germanium / 二次元正孔ガス / 変調ドーピング構造 / 歪み制御薄膜 / 分子線エピタキシー法 / image data processing / Maximum entropy method / X-ray diffraction / Mapping of X-ray fluorescence / X-ray micronanalyzer / Bent graphite monochoromator / マキシマムエンドロピー法 / 蛍光X線 / グラファイト集光素子 / 画像処理 / マキシマムエントロピー法 / 蛍光X線マッピング / X線マイクロアナライザ / 湾曲グラファイト / indirect semiconductor / electron localization / charged exciton / modulation doping / semiconductor quantum well / semiconductor quantum dot / microscopic photoluminescence / 励起子分子 / 局在励起子 / フォトルミネッセンス / 間接遷移型半導体 / 電子局在 / 帯電励起子 / 変調ドーピング / 半導体量子井戸 / 半導体量子ドット / 顕微フォトルミネッセンス / in-situ monitoring / alloy semiconductor / multicomponet zone-melting method / 基板 / 単結晶 / 成長界面 / In-Ga-As / 均一組成 / 多元系バルク結晶 / 多元系半導体バルク結晶 / SiC / ドーピング / 稼動部のない測定 / X線反射率測定 / X線散乱 / X線集光光学系 / 回転機構排除 / 分光集光結晶 / X線回折測定 / 量子ビーム / 量子エレクトロニクス / 表面・界面物性 / スピントロニクス / 量子井戸 / 半導体超微細化 / 結晶工学 / 回転移動不要 / 角度分散のあるX線 / 既存の実験室系X線源 / X線CTR散乱測定 / 半導体結晶成長 / X 線回折・散乱 / 金属内包フラーレン / 配列ナノ空間物質 / X線構造解析 / CTR散乱法 / ヘテロ界面 / 太陽電池 / 結晶欠陥 / 結晶粒径 / 成長速度 / 潜熱 / 過冷度 / 融液成長 / シリコン / フィードバック制御 / 溶質元素補給ゾーン成長 Less

インターカレーションによる熱伝導可変メカニズムの解明と新規デバイス構造の提案Principal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2024 – 2025
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Nagoya University
Variable Thermal Conduction Devices by Intercalation into Oxide MaterialsPrincipal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Nagoya University
Complex crystal growth modeling and process design in latent spacePrincipal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Nagoya University
Thermal switching device based on thermal properties change by intercalationPrincipal Investigator
- Principal Investigator
  
  Ujihara Toru
- Project Period (FY)
  2020 – 2021
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 26:Materials engineering and related fields
- Research Institution
  Nagoya University
Revolution of semiconductor bulk crystal growth technique by transport phenomena combined with information technology
- Principal Investigator
  
  岡野泰則
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 27:Chemical engineering and related fields
- Research Institution
  Osaka University
Method of Crystal Growth InformaticsPrincipal Investigator
- Principal Investigator
  
  Ujihara Toru
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 26:Materials engineering and related fields
- Research Institution
  Nagoya University
Two-step excitation phenomenon observed by VPS method in inter-band solar cellsPrincipal Investigator
- Principal Investigator
  
  Ujihara Toru
- Project Period (FY)
  2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Quantitative evaluation of conduction band structure with visible-light photoelectron spectroscopyPrincipal Investigator
- Principal Investigator
  
  Ujihara Toru
- Project Period (FY)
  2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Nagoya University
The high-speed and high-accuracy evaluation of conduction band in semiconductor by visible-light photoemission spectroscopyPrincipal Investigator
- Principal Investigator
  
  UJIHARA Toru
- Project Period (FY)
  2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
In-situ observation of threading dislocation conversion in high-quality SiC growthPrincipal Investigator
- Principal Investigator
  
  Ujihara Toru
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Nagoya University
High-quality and Low-resistant SiC crystal
- Principal Investigator
  
  Kamei Kazuhito
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Energy spectroscopy of electrons in conduction band of solar cell materials based on quantum structurePrincipal Investigator
- Principal Investigator
  
  UJIHARA Toru
- Project Period (FY)
  2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Nagoya University
Improvement of quantum efficiency of super-high brightness and high spin-polarization photocathodes
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya Industrial Science Research Institute
  Nagoya University
Realization of non-dislocation SiC crystalPrincipal Investigator
- Principal Investigator
  
  UJIHARA Toru
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Development of X-ray diffractomator to realize in-situ observation of crystal growth
- Principal Investigator
  
  TABUCHI MASAO
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Prototype of bio-membrane/semiconductor active devicePrincipal Investigator
- Principal Investigator
  
  UJIHARA Toru
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
材料工学的アプローチによる人工生体膜ラフト構造の再現Principal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Biological Sciences
- Research Institution
  Nagoya University
発光デバイスを用いた膜タンパク質アクティブ輸送制御Principal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
High-speed solution growth based on plasma-VLS methodPrincipal Investigator
- Principal Investigator
  
  UJIHARA Toru
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Development of X-ray scattering measurement system for in-situ observations of semiconductor crystalline growth
- Principal Investigator
  
  TABUCHI Masao
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
人工生体膜におけるラフト構造膜内輸送制御システムの提案Principal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Biological Sciences
- Research Institution
  Nagoya University
Intrinsic Hetero-interface Structures and Their Formation
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
半導体デバイスを利用した生体膜相分離構造のアクティブ制御Principal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
結晶成長で達成する世界最高性能偏極電子ビーム源の開発Principal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
押す・引っ張る・ねじ曲げる「力」によるナノ=ファブリケーションPrincipal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Condensed matter physics I
- Research Institution
  Nagoya University
Development of ultra-low-emittance electron source
- Principal Investigator
  
  NAKANISHI Tsutomu
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Particle/Nuclear/Cosmic ray/Astro physics
- Research Institution
  Nagoya University
歪みを内在したバンドギャップ分散半導体複合結晶の創製Principal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Growth of SiGe bulk single crystals with low defect density and creation of functional heterostructures
- Principal Investigator
  
  NAKAJIMA Kazuo
- Project Period (FY)
  2002 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
シリコン系混晶半導体のグローバル成長制御
- Principal Investigator
  
  USAMI Noritaka
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
過冷炉度を制御した融液成長法による太陽電池用Si多結晶の大粒径化と高効率化
- Principal Investigator
  
  中嶋一雄
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Research on functional electronic devices based on straind-Si on SiGe alloy substrates
- Principal Investigator
  
  USAMI Noritaka
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
高温融液中における拡散係数のその場測定法Principal Investigator
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Development of Hamos-type X-ray micro-analyzer using a cylindrically, bent graphite monochromator
- Principal Investigator
  
  MATSUBARA Eiichiro
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  Tohoku University
Development of multicomponent bulk single crystal with uniform composition by the multicomponent zone-melting method
- Principal Investigator
  
  NAKAJIMA Kazuo
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (A).
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Research on spatially and temporally resolved spectroscopy of semiconductor quantum structures by using ulta small probe light
- Principal Investigator
  
  USAMI Noritaka
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
  The University of Tokyo

[Book] 「SiCパワーデバイスの開発と最新動向―普及に向けたデバイスプロセスと実装技術―」2012
- Author(s)
  宇治原徹
- Total Pages
  361
- Publisher
  S＆T出版
- Data Source
  KAKENHI-PROJECT-23246004
[Book] SiC パワーデバイスの開発と最新動向―普及に向けたデバイスプロセスと実装技術―2012
- Author(s)
  宇治原徹, 他
- Total Pages
  361
- Publisher
  S&T出版
- Data Source
  KAKENHI-PROJECT-23246004
[Book] 「工学的手法による膜制御」(トランスポートソームの世界-膜輸送研究の源流から未来へ-)2011
- Author(s)
  宇治原徹
- Total Pages
  5
- Publisher
  京都廣川書店
- Data Source
  KAKENHI-PROJECT-22656007
[Journal Article] Geometrical design of a crystal growth system guided by a machine learning algorithm2021
- Author(s)
  Yu Wancheng、Zhu Can、Tsunooka Yosuke、Huang Wei、Dang Yifan、Kutsukake Kentaro、Harada Shunta、Tagawa Miho、Ujihara Toru
- Journal Title
  
  CrystEngComm
  
  Volume: 23 Issue: 14 Pages: 2695-2702
- DOI
  10.1039/d1ce00106j
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03839
[Journal Article] Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth2021
- Author(s)
  Dang Yifan、Zhu Can、Ikumi Motoki、Takaishi Masaki、Yu Wancheng、Huang Wei、Liu Xinbo、Kutsukake Kentaro、Harada Shunta、Tagawa Miho、Ujihara Toru
- Journal Title
  
  CrystEngComm
  
  Volume: 23 Issue: 9 Pages: 1982-1990
- DOI
  10.1039/d0ce01824d
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03839
[Journal Article] Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal2021
- Author(s)
  TAKEHARA Yuto、SEKIMOTO Atsushi、OKANO Yasunori、UJIHARA Toru、DOST Sadik
- Journal Title
  
  JTST
  
  Volume: 16 Issue: 1 Pages: JTST0009-JTST0009
- DOI
  10.1299/jtst.2021jtst0009
- NAID
  130007965495
- ISSN
  1880-5566
- Language
  English
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Journal Article] Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method2019
- Author(s)
  Wang L.、Horiuchi T.、Sekimoto A.、Okano Y.、Ujihara T.、Dost S.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 520 Pages: 72-81
- DOI
  10.1016/j.jcrysgro.2019.05.017
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Journal Article] The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide2019
- Author(s)
  Horiuchi Takashi、Wang Lei、Sekimoto Atsushi、Okano Yasunori、Yamamoto Takuya、Ujihara Toru、Dost Sadik
- Journal Title
  
  Crystal Research and Technology
  
  Volume: 54 Issue: 5 Pages: 1900014-1900014
- DOI
  10.1002/crat.201900014
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Journal Article] Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process2019
- Author(s)
  Horiuchi Takashi、Wang Lei、Sekimoto Atsushi、Okano Yasunori、Ujihara Toru、Dost Sadik
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 517 Pages: 59-63
- DOI
  10.1016/j.jcrysgro.2019.04.001
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Journal Article] Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal2019
- Author(s)
  Liu Xinbo、Zhu Can、Harada Shunta、Tagawa Miho、Ujihara Toru
- Journal Title
  
  CrystEngComm
  
  Volume: 21 Issue: 47 Pages: 7260-7265
- DOI
  10.1039/c9ce01338e
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03839
[Journal Article] Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth2016
- Author(s)
  S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara
- Journal Title
  
  Cryst. Growth Des
  
  Volume: 16 Issue: 11 Pages: 6436-6439
- DOI
  10.1021/acs.cgd.6b01107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26246019
[Journal Article] Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents2016
- Author(s)
  A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 55 Issue: 1S Pages: 01AC01-01AC01
- DOI
  10.7567/jjap.55.01ac01
- NAID
  210000145949
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249034
[Journal Article] Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis2016
- Author(s)
  S. Xiao, S. Harada, K. Murayama, T. Ujihara
- Journal Title
  
  Cryst. Growth Des
  
  Volume: 16 Issue: 9 Pages: 5136-5140
- DOI
  10.1021/acs.cgd.6b00711
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26246019
[Journal Article] Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method2016
- Author(s)
  Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 858 Pages: 57-60
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249034
[Journal Article] Nitrogen doping of 4H-SiC by top-seeded solution growth technique using Si-Ti solvent2014
- Author(s)
  K. Kusunoki, K. Kamei, K. Seki, S. Harada and Toru Ujihara
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 392 Pages: 60-65
- DOI
  10.1016/j.jcrysgro.2014.01.044
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249034
[Journal Article] Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4HSiC Using Al-Si Solvent2014
- Author(s)
  S.Harada, Y.Yamamoto, S.Y.Xiao, M.Tagawa, T.Ujihara
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 778-780 Pages: 67-70
- DOI
  10.4028/www.scientific.net/msf.778-780.67
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004, KAKENHI-PROJECT-24686078
[Journal Article] "Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC"2013
- Author(s)
  S. Harada, Y. Yamamoto, K. Seki, T. Ujihara
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 740-742 Pages: 189-192
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] Evolution of threading screw dislocation conversion during solution growth of 4H-SiC2013
- Author(s)
  S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, M.Tagawa, T.Ujihara
- Journal Title
  
  APL Mater.
  
  Volume: 1(2) Issue: 2 Pages: 22109-22109
- DOI
  10.1063/1.4818357
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004, KAKENHI-PROJECT-24686078
[Journal Article] Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth"2013
- Author(s)
  K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 740-742 Pages: 15-18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth2013
- Author(s)
  K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 740-742 Pages: 15-18
- DOI
  10.4028/www.scientific.net/msf.740-742.15
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4HSiC2013
- Author(s)
  S.Harada, Y.Yamamoto, K.Seki, T.Ujihara
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 740-742 Pages: 189-192
- DOI
  10.4028/www.scientific.net/msf.740-742.189
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004, KAKENHI-PROJECT-24686078
[Journal Article] "Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth"2012
- Author(s)
  T. Ujihara, S. Kozawa, K. Seki, Alexander, Y. Yamamoto, S. Harada
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 717-720 Pages: 351-354
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth2012
- Author(s)
  Y.Yamamoto, K.Seki, S.Kozawa, Alexander, S.Harada, T.Ujihara
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 717-720 Pages: 53-56
- DOI
  10.4028/www.scientific.net/msf.717-720.53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth2012
- Author(s)
  T.Ujihara, S.Kozawa, K.Seki, Alexander, Y.Yamamoto, S.Harada
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 717-720 Pages: 351-354
- DOI
  10.4028/www.scientific.net/msf.717-720.351
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation2012
- Author(s)
  X. Jin, H. Nakahara, K. Saitoh, T. Saka, T. Ujihara, N. Tanaka, Y. Takeda
- Journal Title
  
  Journal of Crystal Growtｈ
  
  Volume: 353 Issue: 1 Pages: 84-87
- DOI
  10.1016/j.jcrysgro.2012.05.017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23760310
[Journal Article] "Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth"2012
- Author(s)
  Y. Yamamoto, K. Seki, S. Kozawa, Alexander, S. Harada, T. Ujihara
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 717-720 Pages: 53-56
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth2012
- Author(s)
  Y.Yamamoto, S.Harada, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 5 Issue: 11 Pages: 115501-115501
- DOI
  10.1143/apex.5.115501
- NAID
  10031126459
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] "High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth"2012
- Author(s)
  Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 5
- NAID
  10031126459
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during Sic Solution Growth2012
- Author(s)
  S. Harada, K. Seki, Y. Yamamoto, C. Zhu, Y. Yamamoto, S. Arai, J. Yamasaki, N. Tanaka and T. Ujihara
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 12 Issue: 6 Pages: 3209-3214
- DOI
  10.1021/cg300360h
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246004
[Journal Article] "Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth"2012
- Author(s)
  S. Harada, Alexander, K. Seki, Y. Yamamoto, C. Zhu, Y. Yamamoto, S. Arai, J. Yamasaki, N. Tanaka, and T. Ujihara
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 12, (6) Pages: 3209-3214
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246004
[Journal Article] Elimination of local thickness modulation in GaAs/GaAsP strained superlattices for high spin-polarization photocathodes2011
- Author(s)
  X.G.Jin, S.Fuchi, T.Ujihara, Y.Takeda, 他
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: 298 Pages: 012011-012011
- DOI
  10.1088/1742-6596/298/1/012011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246003
[Journal Article] Status of the high brightness polarized electron source using transmission photocathode2011
- Author(s)
  X.G.Jin, T.Ujihara, Y.Takeda, 他
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: 298 Pages: 12017-12017
- DOI
  10.1088/1742-6596/298/1/012017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23246015, KAKENHI-PROJECT-23540340
[Journal Article] Stacking Faults around the hetero-interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth2010
- Author(s)
  K.Seki, K.Morimoto, T.Ujihara, T.Tokunaga, K.Sasaki, K.Kuroda, Y.Takeda
- Journal Title
  
  Mater.Sci. Forum 363-366
  
  Pages: 363-366
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686003
[Journal Article] Stacking Faults around the hetero-interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth2010
- Author(s)
  K. Seki, K. Morimoto, T. Ujihara, T. Tokunaga, K. Sasaki, K. Kuroda, Y. Takeda
- Journal Title
  
  Mater. Sci. Forum 645-648
  
  Pages: 363-366
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686003
[Journal Article] High Temperature Solution Growth on Free-standing (001)3C-SiC Epilayers2009
- Author(s)
  R.Tanaka, K.Seki, T.Ujihara, Y.Takeda
- Journal Title
  
  Mater.Sci.Forum 615-617
  
  Pages: 27-30
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686003
[Journal Article] Low temperature solution growth of 3C-SiC crystals in Si-Ge-Ti solvent2009
- Author(s)
  R.Tanaka, T.Ujihara, Y.Takeda
- Journal Title
  
  Mater.Sci.Forum 600-603
  
  Pages: 59-62
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686003
[Journal Article] Low temperature solution growth of 3C-SiC crystals in Si-Ge-Ti solvent2009
- Author(s)
  R. Tanaka, T. Ujihara, Y. Takeda
- Journal Title
  
  Mater. Sci. Forum 600-603
  
  Pages: 59-62
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686003
[Journal Article] Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method2009
- Author(s)
  K. Seki, R. Tanaka, T. Ujihara, Y. Takeda
- Journal Title
  
  Mater. Sci. Forum 615-617
  
  Pages: 27-30
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686003
[Journal Article] Local Condensation of Artificial Raft Domains under Light Irradiation in Supported Lipid Bilayer of PSM-DOPC-Cholesterol System2009
- Author(s)
  T.Ujihara, S.Suzuki, Y.Yamauchi, R.Tero, Y.Takeda
- Journal Title
  
  Trans.Mater.Res.Soc.Jpn 34
  
  Pages: 179-182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20056012
[Journal Article] Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method2009
- Author(s)
  K.Seki, R.Tanaka, T.Ujihara, Y.Takeda
- Journal Title
  
  Mater.Sci.Forum 615-617
  
  Pages: 27-30
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686003
[Journal Article] Effects of Applied Voltage on the Size of Phase-Separated Domains in DMPS-DOPC Lipid Binary Bilayers Supported on SiO2/Si Substrates2009
- Author(s)
  Y.Yamauchi, T.Ujihara, R.Tero, Y.Takeda
- Journal Title
  
  Trans.Mater.Res.Soc.Jpn 34
  
  Pages: 217-220
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20056012
[Journal Article] High Temperature Solution Growth on Free-standing (001)3C-SiC Epilayers2009
- Author(s)
  R. Tanaka, K. Seki, T. Ujihara, Y. Takeda
- Journal Title
  
  Mater. Sci. Forum 615-617
  
  Pages: 37-40
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686003
[Journal Article] Highly spin polarized Photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer(査読有)2008
- Author(s)
  X. G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, T. Koshikawa
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 5039-5043
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Journal Article] 固体表面物性がサポーティッドメンブレンの形成過程と構造に及ぼす影響2008
- Author(s)
  手老龍吾、宇治原徹、宇理須恒雄
- Journal Title
  
  表面 (印刷中)
- NAID
  40016130895
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18656007
[Journal Article] Local concentration of gel phase domains in supported lipid bilayers under light irradiation in binary mixture of phospholipids doped with dyes for photoinduced activation2008
- Author(s)
  T. Ujihara, et.al.
- Journal Title
  
  Langmuir 24
  
  Pages: 10974-10980
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20056012
[Journal Article] Local concentration of gel phase domains in supported lipid bilayers under light irradiation in binary mixture of phospholipids doped with dyes for photoinduced activation2008
- Author(s)
  T.Ujihara, S.Suzuki, Y.Yamauchi, R.Tero, Y.Takeda
- Journal Title
  
  Langmuir 24
  
  Pages: 10974-10980
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656003
[Journal Article] 固体表面物性がサポーティツドメンブレンの形成過程と構造に及ぼす影響2008
- Author(s)
  手老龍吾、宇治原徹、宇理須恒雄
- Journal Title
  
  表面 (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18059013
[Journal Article] “High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP super-lattice layer"(査読有)2008
- Author(s)
  N. Yamamoto, T. Nakanishi, A. Mano, H. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X., Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara
- Journal Title
  
  Journal of Applied Physics 103
  
  Pages: 64905-64905
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Journal Article] “Super-high brightness and high spin-polarization photocathode"(査読有)2008
- Author(s)
  X. Jin, N. Yamamoto, Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi, T. Saka, H. Horinaka, T. Kato, T. Yasue, T. Koshikawa
- Journal Title
  
  Applied Physics Express 1・4
  
  Pages: 45002-45002
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Journal Article] Super-high brightness and high spin-polarization photocathode2008
- Author(s)
  X. Jin, N. Yamamoto, Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi, T. Saka, H. Horinaka, T. Kato, T. Yasue, T. Koshikawa
- Journal Title
  
  Applied Physics Express Vol. 1, No. 4
- NAID
  10025080044
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Journal Article] Highly spin polarized Photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer2008
- Author(s)
  X. G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, T. Koshikawa
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 5039-5043
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Journal Article] High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP super- lattice layer2008
- Author(s)
  N. Yamamoto, T. Nakanishi, A. Mano, H. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X., Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara
- Journal Title
  
  Journal of Applied Physics vol. 103, No. 6
  
  Pages: 64905-64905
- NAID
  120001442826
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Journal Article] Supported lipid bilayer membranes on SiO_2 and TiO_2: substrate effects on membrane formation and shape transformation2007
- Author(s)
  R. Tero, T. Ujihara, and T. Urisu
- Journal Title
  
  Proceedings of SPIE 6769
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18656007
[Journal Article] “Thermal emittance measurements for electron beams produced from bulk and superlattice NEA photocathodes"(査読有)2007
- Author(s)
  N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Ryosuke, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T Nakanishi, M. Kuriki, C. Bo, T. Ujihara, Y. Takeda
- Journal Title
  
  Journal of Applied Physics 102
  
  Pages: 24904-24904
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Journal Article] Thermal emittance measurements for electron beams produced from bulk and superlattice NEA photocathodes2007
- Author(s)
  N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Ryosuke, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T. Nakanishi, M. Kuriki, C. Bo, T. Ujihara, Y. Takeda.
- Journal Title
  
  Journal of Applied Physics vol. 102
  
  Pages: 24904-24904
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Journal Article] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering2007
- Author(s)
  A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
- Journal Title
  
  Indium Phosphide and Related Materials 2007 IPRM2007
  
  Pages: 315-318
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Supported lipid bilayer membranes on SiO_2 and TiO_2: substrate effects on membrane formation and shape transformation2007
- Author(s)
  R.Tero, T. Ujihara, and T. Urisu
- Journal Title
  
  Proceedings of SPIE 6769
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18059013
[Journal Article] Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method2006
- Author(s)
  T.Ujihara, Y.Yoshida, W-S.Lee, Y.Takeda
- Journal Title
  
  Appl. Phys. Lett. 89
  
  Pages: 83110-83110
- Data Source
  KAKENHI-PROJECT-17686004
[Journal Article] Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy"2006
- Author(s)
  T.Ujihara, Y.Yoshida, W-S.Lee, Y.Takeda
- Journal Title
  
  J.Crystal Growth 289
  
  Pages: 89-95
- Data Source
  KAKENHI-PROJECT-17686004
[Journal Article] Influence of growth temperature on minority carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent2005
- Author(s)
  Y.Satoh, N.Usami, W.Pan, K.Fujiwara, T.Ujihara, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] メサ構造InPテンプレート基板へのInAs量子ドットの成長とサイズ制御2005
- Author(s)
  宇治原徹, 吉田義浩, 李祐植, 竹田美和
- Journal Title
  
  信学技報 105
  
  Pages: 23-26
- Data Source
  KAKENHI-PROJECT-17686004
[Journal Article] Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams2005
- Author(s)
  K.Nakajima, Y.Azuma, N.Usami, G.Sazaki, T.Ujihara, K.Fujiwara et al.
- Journal Title
  
  INTERNATIONAL JOURNAL OF MATERIALS ＆ PRODUCT TECHNOLOGY 22
  
  Pages: 185-212
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams2005
- Author(s)
  K.Nakajima, Y.Azuma, N.Usami, G.Sazaki, T.Ujihara, K.Fujiwara, T.Shishido, Y.Nishijima, T.Kusunoki
- Journal Title
  
  INTERNATIONAL JOURNAL OF MATERIALS ＆ PRODUCT TECHNOLOGY 22
  
  Pages: 185-212
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Structural properties of directionally grown polycrystalline SiGe for solar cells2005
- Author(s)
  K.Fujiwara, W.Pan, N.Usami, K.Sawada, A.Nomura, T.Ujihara, T.Shishido, K.Nakajima
- Journal Title
  
  J.Crystal Growth 275
  
  Pages: 467-473
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained Si layer2005
- Author(s)
  N.Usami, K.Kutsukake, W.Pan, K.Fujiwara, T.Ujihara, B.Zhang et al.
- Journal Title
  
  J. Crystal Growth 275
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化2005
- Author(s)
  宇治原徹, 陳博, 安井健一, 酒井良介, 山本将博, 中西彊, 竹田美和
- Journal Title
  
  信学技報 106
  
  Pages: 79-84
- NAID
  110004737610
- Data Source
  KAKENHI-PROJECT-17686004
[Journal Article] Structural properties of directionally grown polycrystalline SiGe for solar cells2005
- Author(s)
  K.Fujiwara, W.Pan, N.Usami, K.Sawada, A.Nomura, T.Ujihara et al.
- Journal Title
  
  J. Crystal Growth 275
  
  Pages: 467-473
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Influence of growth temperature on minority carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent2005
- Author(s)
  Y.Satoh, N.Usami, W.Pan, K.Fujiwara, T.Ujihara, K.Nakajima
- Journal Title
  
  J. Appl. Phys. 98
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained Si layer2005
- Author(s)
  N.Usami, K.Kutsukake, W.Pan, K.Fujiwara, T.Ujihara, B.Zhang, T.Yokoyama, K.Nakajima
- Journal Title
  
  J.Crystal Growth 275
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations2004
- Author(s)
  K.Nakajima, T.Ujihara, N.Usami, K.Fujiwara, G.Sazaki, T.Shishido
- Journal Title
  
  J. Crystal Growth 260
  
  Pages: 372-383
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositiona distribution2004
- Author(s)
  W.Pan, K.Fujiwara, N.Usami, T.Ujihara, K.Nakajima et al.
- Journal Title
  
  J. Appl. Phys. 96
  
  Pages: 1238-1241
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Grain growth behaviors of polycrystalline silicon during melt growth processes2004
- Author(s)
  K.Fujiwara, Y.Obinata, T.Ujihara, N.Usami, G.Sazaki, K.Nakajima
- Journal Title
  
  J. Crystal Growth 266
  
  Pages: 441-448
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations2004
- Author(s)
  K.Nakajima, T.Ujihara, N.Usami, K.Fujiwara, G.Sazaki, T.Shishido
- Journal Title
  
  J.Crystal Growth 260
  
  Pages: 372-383
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer2004
- Author(s)
  Alguno, N.Usami, T.Ujihara, K.Fujiwara, G.Sazaki, K.Nakajima, K.Sawano, Y.Shiraki
- Journal Title
  
  Appl.Phys.Lett. 84
  
  Pages: 2802-2804
- NAID
  120002337903
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate by liquid phase epitaxy2004
- Author(s)
  T.Ujihara, K.Obara, N.Usami, K.Fujiwara, G.Sazaki, T.Shishido et al.
- Journal Title
  
  J. Crystal Growth 266
  
  Pages: 467-474
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates2004
- Author(s)
  K.Kutsukake, N.Usami, T.Ujihara, K.Fujiwara, G.Sazaki et al.
- Journal Title
  
  Appl. Phys. Lett. 85
  
  Pages: 1335-1337
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe2004
- Author(s)
  N.Usami, W.Pan, K.Fujiwara, T.Ujihara, G.Sazaki, K.Nakajima
- Journal Title
  
  Jpn. J. Appl. Phys. 43
- NAID
  10012039322
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime2004
- Author(s)
  N.Usami, A.Alguno, K.Sawano, T.Ujihara, K.Fujiwara, G.Sazaki et al.
- Journal Title
  
  Thin Sold Films 451/452
  
  Pages: 604-607
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ observation of melt growth behavior of polycrystalline silicon2004
- Author(s)
  K.Fujiwara, Y.Obinata, T.Ujihara, N.Usami, G.Sazaki, K.Nakajima
- Journal Title
  
  J.Crystal Growth 262
  
  Pages: 124-129
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Grain growth behaviors of polycrystalline silicon during melt growth processes2004
- Author(s)
  K.Fujiwara, Y.Obinata, T.Ujihara, N.Usami, G.Sazaki, K.Nakajima
- Journal Title
  
  J.Crystal Growth 266
  
  Pages: 441-448
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ observation of melt growth behavior of polycrystalline silicon2004
- Author(s)
  K.Fujiwara, Y.Obinata, T.Ujihara, N.Usami, G.Sazaki, K.Nakajima
- Journal Title
  
  J. Crystal Growth 262
  
  Pages: 124-129
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime2004
- Author(s)
  N.Usami, A.Alguno, K.Sawano, T.Ujihara, K.Fujiwara, G.Sazaki, Y.Shiraki, K.Nakajima
- Journal Title
  
  Thin Sold Films 451/452
  
  Pages: 604-607
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate2004
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki et al.
- Journal Title
  
  Appl. Surf. Sci. 224
  
  Pages: 95-98
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution2004
- Author(s)
  W.Pan, K.Fujiwara, N.Usami, T.Ujihara, K.Nakajima, R.Shimokawa
- Journal Title
  
  J.Appl.Phys. 96
  
  Pages: 1238-1241
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate2004
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, K.Nakajima, B.P.Zhang, Y.Segawa
- Journal Title
  
  Appl.Surf.Sci. 224
  
  Pages: 95-98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates2004
- Author(s)
  K.Kutsukake, N.Usami, T.Ujihara, K.Fujiwara, G.Sazaki, K.Nakajima
- Journal Title
  
  Appl.Phys.Lett. 85
  
  Pages: 1335-1337
- NAID
  120002337905
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer2004
- Author(s)
  Alguno, N.Usami, T.Ujihara, K.Fujiwara, G.Sazaki et al.
- Journal Title
  
  Appl. Phys. Lett. 84
  
  Pages: 2802-2804
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe2004
- Author(s)
  N.Usami, W.Pan, K.Fujiwara, T.Ujihara, G.Sazaki, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 43
- NAID
  10012039322
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate by liquid phase epitaxy2004
- Author(s)
  T.Ujihara, K.Obara, N.Usami, K.Fujiwara, G.Sazaki, T.Shishido, K.Nakajima
- Journal Title
  
  J.Crystal Growth 266
  
  Pages: 467-474
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate2003
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki et al.
- Journal Title
  
  Jpn. J. Appl. Phys. 42
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Stacked Ge islands for photovoltaic applications2003
- Author(s)
  N.Usami, A.Alguno, T.Ujihara, K.Fujiwara, G.Sazaki, K.Nakajima, K.Sawano, Y.Shiraki
- Journal Title
  
  Sci.Tech.Adv.Mat. 4
  
  Pages: 367-370
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in Si matrix2003
- Author(s)
  N.Usami, T.Ichitsubo, T.Ujihara, T.Takahashi, K.Fujiwara et al.
- Journal Title
  
  J. Appl. Phys. 94
  
  Pages: 916-920
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature2003
- Author(s)
  T.Ujihara, K.Obara, N.Usami, K.Fujiwara, G.Sazaki, T.Shishido, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 42
- NAID
  10010781885
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Stacked Ge islands for photovoltaic applications2003
- Author(s)
  N.Usami, A.Alguno, T.Ujihara, K.Fujiwara, G.Sazaki et al.
- Journal Title
  
  Sci. Tech. Adv. Mat. 4
  
  Pages: 367-370
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in Si matrix2003
- Author(s)
  N.Usami, T.Ichitsubo, T.Ujihara, T.Takahashi, K.Fujiwara, G.Sazaki, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 94
  
  Pages: 916-920
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate2003
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, B.P.Zhang, Y.Segawa, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 42
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure2003
- Author(s)
  A.Alguno, N.Usami, T.Ujihara, K.Fujiwara, G.Sazaki, Y.Shiraki, K.Nakajima
- Journal Title
  
  Appl.Phys.Lett. 83
  
  Pages: 1258-1260
- NAID
  120002337899
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature2003
- Author(s)
  Y.Azuma, N.Usami, T.Ujihara, K.Fujiwara, Y.Murakami, K.Nakajima
- Journal Title
  
  J.Crystal Growth 250
  
  Pages: 298-304
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature2003
- Author(s)
  T.Ujihara, K.Obara, N.Usami, K.Fujiwara, G.Sazaki et al.
- Journal Title
  
  Jpn. J. Appl. Phys. 42
- NAID
  10010781885
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure2003
- Author(s)
  A.Alguno, N.Usami, T.Ujihara, K.Fujiwara, G.Sazaki, Y.Shiraki et al.
- Journal Title
  
  Appl. Phys. Lett. 83
  
  Pages: 1258-1260
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature2003
- Author(s)
  Y.Azuma, N.Usami, T.Ujihara, K.Fujiwara, Y.Murakami et al.
- Journal Title
  
  J. Crystal Growth 250
  
  Pages: 298-304
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications2002
- Author(s)
  K.Nakajima, N.Usami, K.Fujiwara, Y.Murakami, T.Ujihara, G.Sazaki, T.Shishido
- Journal Title
  
  Solar Energy Materials and Solar Cells 72
  
  Pages: 93-100
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution2002
- Author(s)
  N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, H.Yaguchi et al.
- Journal Title
  
  Jpn. J. Appl. Phys. 41
- NAID
  110006344347
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J. Non-cryst. Solids 312
  
  Pages: 196-202
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ observation of the Marangoni convection of a NaC1 aqueous solution under microgravity2002
- Author(s)
  G.Sazaki, S.Miyashita, M.Nokura, T.Ujihara, N.Usami, K.Nakajima
- Journal Title
  
  J.Cryst.Growth 234
  
  Pages: 516-522
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J.Crystal Growth 242
  
  Pages: 313-320
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures2002
- Author(s)
  N.Usami, Y.Azuma, T.Ujihara, G.Sazaki, K.Fujiwara et al.
- Journal Title
  
  Mat. Sci. Eng. B 89
  
  Pages: 364-367
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution2002
- Author(s)
  N.Usami, T.Takahashi, K.Fujiwara, T.Ujihara, G.Sazaki et al.
- Journal Title
  
  Jpn. J. Appl. Phys. 41
  
  Pages: 4462-4465
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ observation of the Marangoni convection of a NaCl aqueous solution under microgravity2002
- Author(s)
  G.Sazaki, S.Miyashita, M.Nokura, T.Ujihara, N.Usami, K.Nakajima
- Journal Title
  
  J. Cryst. Growth 234
  
  Pages: 516-522
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ monitoring system of the position and temperature at the crystal-solution interface2002
- Author(s)
  G.Sazaki, Y.Azuma, S.Miyashita, N.Usami, T.Ujihara, K.Fujiwara et al.
- Journal Title
  
  J. Crystal Growth 236
  
  Pages: 125-131
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In situ observation of crystal growth behavior of silicon melt2002
- Author(s)
  K.Fujiwara, Ke.Nakajima, T.Ujihara, N.Usami, G.Sazaki, H.Hasegawa, S.Mizoguchi, K.Nakajima
- Journal Title
  
  J.Cryst.Growth 243
  
  Pages: 275-282
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution2002
- Author(s)
  N.Usami, T.Takahashi, K.Fujiwara, T.Ujihara, G.Sazaki, Y.Murakami, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 92
  
  Pages: 7098-7101
- NAID
  120002338155
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells2002
- Author(s)
  K.Nakajima, N.Usami, K.Fujiwara, Y.Murakami, T.Ujihara et al.
- Journal Title
  
  Solar Energy Materials ＆ Solar Cell 73
  
  Pages: 305-320
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J. Crystal Growth 242
  
  Pages: 313-320
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J. Crystal Growth 241
  
  Pages: 387-394
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution2002
- Author(s)
  N.Usami, T.Takahashi, K.Fujiwara, T.Ujihara, G.Sazaki, Y.Murakami, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 4462-4465
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures2002
- Author(s)
  N.Usami, Y.Azuma, T.Ujihara, G.Sazaki, K.Fujiwara, Y.Murakami, K.Nakajima
- Journal Title
  
  Mat.Sci.Eng.B 89
  
  Pages: 364-367
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells2002
- Author(s)
  K.Nakajima, N.Usami, K.Fujiwara, Y.Murakami, T.Ujihara, G.Sazaki, T.Shishido
- Journal Title
  
  Solar Energy Materials ＆ Solar Cell 73
  
  Pages: 305-320
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J.Crystal Growth 241
  
  Pages: 387-394
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J.Non-cryst.Solids 312
  
  Pages: 196-202
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications2002
- Author(s)
  K.Nakajima, N.Usami, K.Fujiwara, Y.Murakami, T.Ujihara et al.
- Journal Title
  
  Solar Energy Materials and Solar Cells 72
  
  Pages: 93-100
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution2002
- Author(s)
  N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, H.Yaguchi, Y.Murakami, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 41
- NAID
  110006344347
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution2002
- Author(s)
  N.Usami, T.Takahashi, K.Fujiwara, T.Ujihara, G.Sazaki et al.
- Journal Title
  
  J. Appl. Phys. 92
  
  Pages: 7098-7101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ monitoring system of the position and temperature at the crystal-solution interface2002
- Author(s)
  G.Sazaki, Y.Azuma, S.Miyashita, N.Usami, T.Ujihara, K.Fujiwara, Y.Murakami, K.Nakajima
- Journal Title
  
  J.Crystal Growth 236
  
  Pages: 125-131
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In situ observation of crystal growth behavior of silicon melt2002
- Author(s)
  K.Fujiwara, Ke.Nakajima, T.Ujihara, N.Usami, G.Sazaki et al.
- Journal Title
  
  J. Cryst. Growth 243
  
  Pages: 275-282
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals2002
- Author(s)
  K.Nakajima, T.Kusunoki, Y.Azuma, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, T.Shishido
- Journal Title
  
  J.Crystal Growth 240
  
  Pages: 373-381
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Patent] 結晶成長条件の決定方法2018
- Inventor(s)
  朱燦, 遠藤友樹, 原田俊太, 宇治原徹
- Industrial Property Rights Holder
  朱燦, 遠藤友樹, 原田俊太, 宇治原徹
- Industrial Property Rights Type
  特許
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-18H03839
[Patent] 炭化珪素単結晶の製造方法および該製造方法により得られる炭化珪素単結晶2009
- Inventor(s)
  宇治原徹, 吉川和男, 小宮山聰
- Industrial Property Rights Holder
  名古屋大学・東海カーボン
- Industrial Property Number
  2009-234325
- Filing Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20686003
[Patent] 炭化珪素単結晶の製造方法および該製造方法により得られる炭化珪素単結晶2008
- Inventor(s)
  宇治原徹, 吉川和男, 小宮山聰
- Industrial Property Rights Holder
  名古屋大学・東海カーボン
- Industrial Property Number
  2008-262078
- Filing Date
  2008-10-08
- Data Source
  KAKENHI-PROJECT-20686003
[Patent] 炭化珪素単結晶の製造方法および該製造方法により得られる炭化珪素単結晶2008
- Inventor(s)
  宇治原徹, 吉川和男, 小宮山聰
- Industrial Property Rights Holder
  名古屋大学・東海カーボン
- Industrial Property Number
  2008-026078
- Filing Date
  2008-10-08
- Data Source
  KAKENHI-PROJECT-20686003
[Patent] スピン偏極電子源2008
- Inventor(s)
  宇治原徹, 金秀光, 竹田美和, 中西彊, 山本尚人, 坂貴, 加藤俊宏
- Industrial Property Rights Holder
  名古屋大学, 大同工業大学, 大同特殊鋼
- Industrial Property Number
  2008-079292
- Filing Date
  2008-03-25
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Patent] スピン偏極電子発生素子2006
- Inventor(s)
  宇治原徹ほか4名
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2006-060673
- Filing Date
  2006-03-07
- Data Source
  KAKENHI-PROJECT-17686004
[Patent] スピン偏極電子発生装置2006
- Inventor(s)
  宇治原徹, 竹田美和, 中西彊, 山本将博, 陳博
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2006-060673
- Filing Date
  2006-03-07
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15204019
[Presentation] デジタルツインを用いた結晶成長プロセス最適化技術（SiC溶液成長を中心に）2022
- Author(s)
  宇治原徹
- Organizer
  CVD反応分科会第35回シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] 大口径SiC結晶成長のためのプロセスインフォマティクス技術の開発2021
- Author(s)
  宇治原徹
- Organizer
  先進セラミックス学振124委員会　第166回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] 溶液法による6インチSiC結晶の成長とそれに活用したプロセス・インフォマティクス技術2021
- Author(s)
  宇治原徹
- Organizer
  応用物理学会先進パワー半導体分科会第8回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] Application of Machine Learning for High Quality SiC Crystal Growth2019
- Author(s)
  T. Ujihara
- Organizer
  the 5th International Conference on Advanced Electromaterials (ICAE 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] Threading Screw Dislocations Conversion and Suppression of Inclusions in 3-inch 4° off-axis C-face 4H-SiC Solution Growth with Pure Si2019
- Author(s)
  TAKAMA UNNO, CAN ZHU, SHUNTA HARADA, HARUHIKO KOIZUMI, MIHO TAGAWA, TORU UJIHARA
- Organizer
  the International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] The control of conduction type in high quality bulk solution growth of SiC2019
- Author(s)
  Can Zhu, Shunta Harada, Miho Tagawa, Toru Ujihara
- Organizer
  the International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] Machine learning for SiC crystal growth (modeling, optimization and visualization)2019
- Author(s)
  T. Ujihara
- Organizer
  International Symposium & School on Crystal Growth Fundamentals
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] Threading Screw Dislocations Conversion and Suppression of Inclusions in 3-inch 4° off-axis C-face 4H-SiC Solution Growth with Pure Si2019
- Author(s)
  TAKAMA UNNO, CAN ZHU, SHUNTA HARADA, HARUHIKO KOIZUMI, MIHO TAGAWA, TORU UJIHARA
- Organizer
  ICSCRM2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] The control of conduction type in high quality bulk solution growth of SiC2019
- Author(s)
  Can Zhu, Shunta Harada, Miho Tagawa, Toru Ujihara
- Organizer
  ICSCRM2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] PREDICTION MODEL OF COMPUTATIONAL FLUID DYNAMICS BASED ON NEURAL NETWORK CONSTRUCTED BY MACHINE LEARNING AND PROCESS OPTIMIZATION OF SIC SOLUTION GROWTH2019
- Author(s)
  T. Ujihara, Y. Tsunooka, H. Lin, C. Zhu, T. Narumi, K. Kutsukake, S. Harada, M. Tagawa
- Organizer
  the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] Application of high-quality SiC solution growth to large size crystal2019
- Author(s)
  Can Zhu, Tomoki Endo, Takama Unno, Haruhiko Koizumi, Shunta Harada, Miho Tagawa, Toru Ujihara
- Organizer
  ICSCRM2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] ESTIMATION OF HIGH-TEMPERATURE PHYSICAL PROPERTIES BY MACHINE LEARNING TOWARD ACCURATE NUMERICAL MODELING OF CRYSTAL GROWTH2019
- Author(s)
  K. Ando, H. Lin, Y. Tsunooka, T. Narumi, C. Zhu, K. Kutsukake, S. Harada, K. Matsui, I. Takeuchi, Y. Koyama, Y. Kawajiri, M. Tagawa, T. Ujihara
- Organizer
  the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] PREDICTION MODEL OF COMPUTATIONAL FLUID DYNAMICS BASED ON NEURAL NETWORK CONSTRUCTED BY MACHINE LEARNING AND PROCESS OPTIMIZATION OF SIC SOLUTION GROWTH2019
- Author(s)
  T. Ujihara, Y. Tsunooka, H. Lin, C. Zhu, T. Narumi, K. Kutsukake, S. Harada, M. Tagawa
- Organizer
  ICCGE-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03839
[Presentation] Spectroscopy of electrons emitting from conduction mini-band of semiconductor superlattice through negative-electron-affinity surface2017
- Author(s)
  T. Ujihara
- Organizer
  the 39th International conference on Vacuum Ultraviolet and X-ray Physics
- Place of Presentation
  Zurich, Switzerland
- Year and Date
  2017-07-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14230
[Presentation] Evaluation of conduction mini-bands in semiconductor superlattice by visible-light photoelectron spectroscopy2016
- Author(s)
  T. Ujihara
- Organizer
  13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Rome. Italy
- Year and Date
  2016-10-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14230
[Presentation] The realization of high-quality 4H-SiC C-face grown crystals by controlling the macrosteps formation during solution growth2016
- Author(s)
  S. Y. Xiao, S. Harada, P. L. Chen, K. Murayama, T.Ujihara
- Organizer
  the 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246019
[Presentation] High Quality SiC Single Crystal Grown by Soltion Growth Method2016
- Author(s)
  T. Ujihara
- Organizer
  Fall Meeting of the Korean Ceramics Society
- Place of Presentation
  Seoul
- Year and Date
  2016-11-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246019
[Presentation] 透過電子顕微鏡による窒素添加 SiC 積層欠陥の高温その場観察2016
- Author(s)
  陳鵬磊, 原田俊太, 荒井重勇, 藤榮文博, 肖世玉, 加藤智久, 田川美穂, 宇治原徹
- Organizer
  先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-25249034
[Presentation] Direct observation of electrons transported in second conduction mini-band of a semiconductor superlattice by visible-light photoemission spectroscopy2016
- Author(s)
  F. Ichihashi, K. Nishitani, X. Dong, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara
- Organizer
  SPIE photonics
- Place of Presentation
  San Francisco, CA
- Year and Date
  2016-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13349
[Presentation] 窒素添加した 4H-SiC における積層欠陥拡張・収縮挙動の高温その場観察2016
- Author(s)
  藤榮文博, 原田俊太, 村山健太, 花田賢志, 陳鵬磊, 田川美穂, 加藤智久, 宇治原徹,
- Organizer
  先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-25249034
[Presentation] Control of Macrostep Structure for High-Quality SiC Grown by Liquid Phase Epitaxy2016
- Author(s)
  T. Ujihara, C. Zhu, K. Murayama, S. Harada, M.Tagawa
- Organizer
  the 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-08-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246019
[Presentation] 可視光励起光電子分光法を用いたGaPにおけるキャリア散乱の温度依存性評価2016
- Author(s)
  市橋史朗，川口昂彦，董キン宇，井上明人，桑原真人，伊藤孝寛，原田俊太，田川美穂，宇治原徹
- Organizer
  第６３回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13349
[Presentation] 半導体伝導帯構造を明らかにする可視光電子光電子分光法の提案2016
- Author(s)
  宇治原徹, 市橋史朗, 董キン宇, 井上明人, 川口昂彦, 桑原真人, 伊藤孝寛, 原田俊太, 田川美穂
- Organizer
  2016年真空・表面科学合同講演会
- Place of Presentation
  名古屋
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-16K14230
[Presentation] Temperature Dependence of the Energy Distribution of the Conduction Electrons in GaP Single Crystal2015
- Author(s)
  F. Ichihashi, X. Dong, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, M. Tagawa and T. Ujihara
- Organizer
  10th International Symposium on Atomic Level Characterizations for New Materials and Devices
- Place of Presentation
  Shimane, Japan
- Year and Date
  2015-10-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13349
[Presentation] 可視光励起光電子分光によるGaP中伝導電子分布の温度変化の観測2015
- Author(s)
  川口昂彦, 市橋史朗, 董キン宇, 桒原真人, 伊藤孝寛, 宇治原徹
- Organizer
  日本物理学会秋季大会
- Place of Presentation
  関西大学
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-15K13349
[Presentation] Ultra-high quality SiC crystal grown by solution method2014
- Author(s)
  T.Ujihara
- Organizer
  ICSEM 2014 (International Conference on Science and Engineering of Materials)
- Place of Presentation
  Sharda University, Greater Noida, India
- Year and Date
  2014-01-08
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “可視光励起光電子分光法による半導体超格子ミニバンド構造の有効質量評価”2014
- Author(s)
  西谷健治，志村大樹，市橋史朗，桒原真人，伊藤孝寛，原田俊太，田川美穂，宇治原徹
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス、神奈川県
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] "Ultra-high quality SiC crystal grown by solution method"2014
- Author(s)
  T.Ujihara
- Organizer
  ICSEM 2014 (International Conference on Science and Engineering of Materials
- Place of Presentation
  Sharda University, Greater Noida, India
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “可視光励起光電子分光法による半導体中の伝導電子の直接観察”2014
- Author(s)
  市橋史朗，志村大樹，西谷健治，原真，伊藤孝寛，原田俊太，田川美穂，宇治原徹
- Organizer
  日本物理学会第69回年次大会
- Place of Presentation
  東海大学湘南キャンパス、神奈川県
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] 可視光励起光電子分光法による半導体中の伝導電子の直接観察2014
- Author(s)
  市橋史朗, 志村大樹, 西谷健治, 原真, 伊藤孝寛, 原田俊太, 田川美穂, 宇治原徹
- Organizer
  日本物理学会第69回年次大会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2014-03-27
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] Efficient Process for Ultrahigh Quality 4H-SiC Crystal Utilizing Solution Growth on Off-axis Seed Crystal2014
- Author(s)
  S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
- Organizer
  2012 MRS Spring Meeting & Exhibit
- Place of Presentation
  California, USA
- Year and Date
  2014-04-10
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 可視光励起光電子分光法による半導体超格子ミニバンド構造の有効質量評価2014
- Author(s)
  西谷健治, 志村大樹, 市橋史朗 , 桒原真人, 伊藤孝寛, 原田俊太, 田川美穂, 宇治原徹
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects2013
- Author(s)
  T.Ujihara, Y.Yamamoto, S.Harada, S.Xiao, K.Seki
- Organizer
  ICCGE-17
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2013-08-12
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 4H-SiC 溶液成長における成長表面のステップ構造と貫通転位変換挙動の相関2013
- Author(s)
  原田俊太, 山本祐治, 肖世玉, 堀尾篤史, 田川美穂, 宇治原徹
- Organizer
  SiC 及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館
- Year and Date
  2013-12-09
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “SiC溶液成長過程における基底面転位の形成”2013
- Author(s)
  肖世玉，原田俊太，宇治原徹
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館，埼玉県
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] Structure of basal plane defects formed by threading screw dislocation conversion during high quality SiC solution growth2013
- Author(s)
  S.Harada, R.Kunimatsu, Xiao Shiyu, Y.Yamamoto, M.Tagawa, Y.Yamamoto, S.Arai, N.Tanaka, T.Ujihara
- Organizer
  ISETS '13
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2013-12-14
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects"2013
- Author(s)
  T. Ujihara, Y. Yamamoto, S. Harada, S. Xiao, K. Seki
- Organizer
  17th International Conference on Crystal Growth and Epitaxy(ICCGE-17)
- Place of Presentation
  University of Warsaw, Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Observation of Conduction Electrons in Superlattice Structure by Visible Light Photoemission Spectroscopy"2013
- Author(s)
  K. Nishitani, F. Ichihashi, D. Shimura, S. Harada, M. Kuwahara, M. Tagawa, T. Ito, T. Ujihara
- Organizer
  the 23rd International Photovoltaic Science and Engineering Conference(PVSEC-23)
- Place of Presentation
  Taipei International Conventional Center, Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] SiC溶液成長過程における基底面転位の形成2013
- Author(s)
  肖世玉, 朱燦, 原田俊太, 宇治原徹
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Year and Date
  2013-09-18
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Control of Dislocation Conversion during Solution Growth by Changing Surface Step Structure"2013
- Author(s)
  S. Harada, Y. Yamamoto, S. Xiao, A. Horio, M. Tagawa, T. Ujihara
- Organizer
  the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
- Place of Presentation
  Phoenix Seagaia Resort, Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “4H-SiC溶液成長過程における貫通らせん転位変換により形成する欠陥の微細構造”2013
- Author(s)
  原田俊太,國松亮太,田川美穂,山本悠太,荒井重勇,田中信夫,宇治原徹
- Organizer
  公益社団法人応用物理学会　2012年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Direct Observation of Conduction Band Structure and Conduction Electron Distribution in Semiconductor for Intermediate-band Solar Cells"2013
- Author(s)
  F.Ichihashi, D.Shimura, K.Nishitani, M.Kuwahara, S.Harada, T.Ito, M.Tagawa, T.Ujihara
- Organizer
  ISETS '13
- Place of Presentation
  Nagoya University, Nagoya
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] 4H-SiC 溶液成長過程における貫通転位変換挙動と成長表面モフォロジーの相関2013
- Author(s)
  原田俊太, 山本祐治, 肖世玉, 堀尾篤史, 田川美穂, 宇治原徹
- Organizer
  日本結晶成長学会第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Year and Date
  2013-11-07
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Increase in the Growth Rate by Rotating the Seed Crystal at a High Speed during the Solution Growth of SiC"2013
- Author(s)
  T. Umezaki, D. Koike, S. Harada, T. Ujihara
- Organizer
  the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
- Place of Presentation
  Phoenix Seagaia Resort, Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 可視光励起光電子分光法による半導体超格子構造の伝導キャリア観察2013
- Author(s)
  西谷健治, 市橋史朗 , 志村大樹, 桒原真人, 伊藤孝寛, 原田俊太, 田川美穂, 宇治原徹
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] Increase in the Growth Rate by Rotating the Seed Crystal at a High Speed during the Solution Growth of SiC2013
- Author(s)
  T.Umezaki, D.Koike, S.Harada, T.Ujihara
- Organizer
  ICSCRM2013
- Place of Presentation
  Miyazaki, Japan
- Year and Date
  2013-09-30
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “高品質SiC溶液成長”2013
- Author(s)
  宇治原徹, 原田俊太
- Organizer
  一般社団法人資源・素材学会　平成25年度春季大会
- Place of Presentation
  千葉工業大学津田沼キャンパス, 千葉県
- Invited
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “SiC溶液成長過程における基底面転位の形成”2013
- Author(s)
  肖世玉，朱燦，原田俊太，宇治原徹
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 角度分解光電子分光法を用いた半導体超格子のミニバンド評価2013
- Author(s)
  志村大樹, 市橋史朗 , 西谷健治, 原田俊太, 伊藤孝寛, 桒原真人, 松波雅治, 木村真一, 田川美穂, 宇治原徹
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] Control of Dislocation Conversion during Solution Growth by Changing Surface Step Structure2013
- Author(s)
  S.Harada, Y.Yamamoto, S.Xiao, A.Horio, M.Tagawa, T.Ujihara
- Organizer
  ICSCRM2013
- Place of Presentation
  Miyazaki, Japan
- Year and Date
  2013-09-30
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “角度分解光電子分光法を用いた半導体超格子のミニバンド評価”2013
- Author(s)
  志村大樹，市橋史朗，西谷健治，原田俊太，伊藤孝寛，桒原真人，松波雅治，木村真一，田川美穂，宇治原徹
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス、京都府
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] Observation of Conduction Electrons in Superlattice Structure by Visible Light Photoemission Spectroscopy2013
- Author(s)
  K. Nishitani, F. Ichihashi, D. Shimura, S. Harada, M. Kuwahara, M. Tagawa, T. Ito, T. Ujihara
- Organizer
  the 23rd International Photovoltaic Science and Engineering Conference(PVSEC-23)
- Place of Presentation
  Taipei International Conventional Center, Taipei, Taiwan
- Year and Date
  2013-10-30
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] Direct Observation of Conduction Band Structure and Conduction Electron Distribution in Semiconductor for Intermediate-band Solar Cells2013
- Author(s)
  F. Ichihashi, D. Shimura, K. Nishitani, M. Kuwahara, S. Harada, T. Ito, M. Tagawa, T. Ujihara
- Organizer
  ISETS '13
- Place of Presentation
  Nagoya University, Nagoya
- Year and Date
  2013-12-14
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] Evolution of threading screw dislocation conversion during solution growth of 4H-SiC2013
- Author(s)
  S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, M.Tagawa, T.Ujihara
- Organizer
  ICCGE-17
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2013-08-15
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 4H-SiC 溶液成長過程における貫通らせん転位変換により形成する欠陥の微細構造2013
- Author(s)
  原田俊太, 國松亮太, 田川美穂, 山本悠太, 荒井重勇, 田中信夫, 宇治原徹
- Organizer
  応用物理学会 2012年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “4H-SiC溶液成長過程における貫通転位変換挙動と成長表面モフォロジーの相関”2013
- Author(s)
  原田俊太，山本祐治，肖世玉，堀尾篤史, 田川美穂，宇治原徹
- Organizer
  日本結晶成長学会第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター（TOiGO内）, 長野県
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “4H-SiC溶液成長における成長表面のステップ構造と貫通転位変換挙動の相関”2013
- Author(s)
  原田俊太，山本祐治，肖世玉，堀尾篤史，田川美穂，宇治原徹
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館，埼玉県
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “可視光励起光電子分光法による半導体超格子構造の伝導キャリア観察”2013
- Author(s)
  西谷健治，市橋史朗，志村大樹，桒原真人，伊藤孝寛，原田俊太，田川美穂，宇治原徹
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス、京都府
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] "Evaluation of Mini-Bands Formed in Superlattice Structure for Intermediate-Band Solar Cell"2013
- Author(s)
  D.Shimura, F.Ichihashi, K.Nishitani, S.Harada, T.Ito, M.Kuwahara, M.Matsunami, S.Kimura, M.Tagawa, T.Ujihara
- Organizer
  ISETS '13
- Place of Presentation
  Nagoya University, Nagoya
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] "Structure of basal plane defects formed by threading screw dislocation conversion during high quality SiC solution growth"2013
- Author(s)
  S.Harada, R.Kunimatsu, Xiao Shiyu, Y.Yamamoto, M.Tagawa, Y.Yamamoto, S.Arai, N.Tanaka, T.Ujihara
- Organizer
  ISETS '13
- Place of Presentation
  Nagoya University, Nagoya
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] SiC 溶液成長過程における基底面転位の形成2013
- Author(s)
  肖世玉, 原田俊太, 宇治原徹
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館
- Year and Date
  2013-12-09
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Evolution of threading screw dislocation conversion during solution growth of 4H-SiC"2013
- Author(s)
  S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, T. Ujihara
- Organizer
  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  University of Warsaw, Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “SiC溶液成長過程における貫通転位変換と成長表面のステップ構造”2013
- Author(s)
  原田俊太，山本祐治，肖世玉，堀尾篤史，田川美穂，宇治原徹
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 高品質SiC 溶液成長2013
- Author(s)
  宇治原徹, 原田俊太
- Organizer
  資源・素材学会平成25年度春季大会
- Place of Presentation
  千葉工業大学
- Year and Date
  2013-03-30
- Invited
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 「講演奨励賞受賞記念講演」可視光励起光電子分光法による伝導電子の直接観察2013
- Author(s)
  市橋史朗 , 志村大樹, 西谷健治, 桒原真人, 伊藤孝寛, 原田俊太, 田川美穂, 宇治原徹
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Year and Date
  2013-09-17
- Invited
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] SiC 溶液成長過程における貫通転位変換と成長表面のステップ構造2013
- Author(s)
  原田俊太, 山本祐治, 肖世玉, 堀尾篤史, 田川美穂, 宇治原徹
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Year and Date
  2013-09-18
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] Evaluation of Mini-Bands Formed in Superlattice Structure for Intermediate-Band Solar Cell2013
- Author(s)
  D. Shimura, F. Ichihashi, K. Nishitani, S. Harada, T. Ito, M. Kuwahara, M. Matsunami, S. Kimura, M. Tagawa, T. Ujihara
- Organizer
  ISETS '13
- Place of Presentation
  Nagoya University, Nagoya
- Year and Date
  2013-12-14
- Data Source
  KAKENHI-PROJECT-25600088
[Presentation] "Evolution of Threading Edge Dislocation During Solution Growth of SiC"2012
- Author(s)
  S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto International Conference Center, Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “Si-C-X溶媒を用いたSiC溶液成長における結晶化多形の熱力学的考察”2012
- Author(s)
  堀尾篤史, 原田俊太,宇治原徹
- Organizer
  SiC及び関連ワイドギャップ半導体研究会　第21回講演会
- Place of Presentation
  大阪市中央公会堂, 大阪府
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] Evolution of Threading Edge Dislocation During Solution Growth of SiC2012
- Author(s)
  S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
- Organizer
  SSDM2012
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] Reduction of threading screw dislocation density utilizing defect conversion during solution growth of 4H-SiC2012
- Author(s)
  S.Harada, Y.Yamamoto, K.Seki, T.Ujihara
- Organizer
  ECSCRM-2012
- Place of Presentation
  Saint-Petersburg, Russia
- Year and Date
  2012-09-04
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “4H-SiC溶液成長における貫通刃状転位の選択的変換”2012
- Author(s)
  原田俊太, 山本祐治, 関　和明, 堀尾篤史, 三橋貴仁, 宇治原徹
- Organizer
  公益社団法人応用物理学会　2012年秋季第73回応用物理学関係連合講演会
- Place of Presentation
  愛媛大学城北地区,　愛媛県
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 一方向の溶液流れ下におけるSiC のステップバンチングの挙動2012
- Author(s)
  朱燦, 原田俊太, 関和明, 新家寛正, 田川美穂, 宇治原徹
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Year and Date
  2012-11-10
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography2012
- Author(s)
  S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
- Organizer
  IUMRS-ICEM2012
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 溶液法による高品質SiC 結晶成長メカニズム2012
- Author(s)
  原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 田川美穂, 宇治原徹
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 溶液法による超高品質SiC 結晶成長2012
- Author(s)
  宇治原徹, 原田俊太, 山本祐治, 関和明
- Organizer
  日本セラミックス協会第25回秋季シンポジウム
- Place of Presentation
  名古屋大学
- Year and Date
  2012-09-19
- Invited
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] Si-C-X溶媒を用いたSiC 溶液成長における結晶化多形の熱力学的考察2012
- Author(s)
  堀尾篤史, 原田俊太, 宇治原徹
- Organizer
  SiC 及び関連ワイドギャップ半導体研究会第21回講演会
- Place of Presentation
  大阪市中央公会堂
- Year and Date
  2012-11-19
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Effect of surface polarity on the conversion of threading dislocations in solution growth"2012
- Author(s)
  Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
- Organizer
  The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)
- Place of Presentation
  Hotel Saint Petersburg, Saint-Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “一方向の溶液流れ下におけるSiCのステップバンチングの挙動”2012
- Author(s)
  朱燦, 原田俊太, 関和明, 新家寛正, 田川美穂, 宇治原徹
- Organizer
  第42回結晶成長国内会議 (NCCG-42)
- Place of Presentation
  九州大学, 福岡県
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Efficient Process for Ultrahigh Quality 4H-SiC Crystal Utilizing Solution Growth on Off-axis Seed Crystal"2012
- Author(s)
  S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
- Organizer
  2012 MRS Spring Meeting & Exhibit
- Place of Presentation
  Moscone West Convention Center Martiott Marquis San Francisco, California, USA
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] Possibility for elimination of dislocations in SiC crystal : conversion of threading edge dislocations by solution growth2012
- Author(s)
  S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, C.Zhu, M.Tagawa, T.Ujihara
- Organizer
  ECSCRM-2012
- Place of Presentation
  Saint-Petersburg, Russia
- Year and Date
  2012-09-04
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 4H-SiC 溶液成長における貫通刃状転位の選択的変換2012
- Author(s)
  原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 宇治原徹
- Organizer
  応用物理学会 2012年秋季第73回応用物理学関係連合講演会
- Place of Presentation
  愛媛大学
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Possibility for elimination of dislocations in SiC crystal: conversion of threading edge dislocations by solution growth"2012
- Author(s)
  S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, C. Zhu, M. Tagawa, T. Ujihara
- Organizer
  The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)
- Place of Presentation
  Hotel Saint Petersburg, Saint-Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “溶液法による高品質SiC結晶成長メカニズム”2012
- Author(s)
  原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 田川美穂, 宇治原徹
- Organizer
  第42回結晶成長国内会議 (NCCG-42)
- Place of Presentation
  九州大学, 福岡県
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Reduction of threading screw dislocation density utilizing defect conversion during solution growth of 4H-SiC"2012
- Author(s)
  S. Harada, Y. Yamamoto, K. Seki, T. Ujihara
- Organizer
  The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)
- Place of Presentation
  Hotel Saint Petersburg, Saint-Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “溶液法による超高品質SiC結晶成長”2012
- Author(s)
  宇治原徹, 原田俊太,山本祐治, 関　和明
- Organizer
  公益社団法人日本セラミックス協会第25回秋季シンポジウム
- Place of Presentation
  名古屋大学,　愛知県
- Invited
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] “溶液成長過程における貫通転位変換を利用した高品質4H-SiCの実現”2012
- Author(s)
  原田俊太, 山本祐治, 関和明, 田川美穂, 宇治原徹
- Organizer
  SiC及び関連ワイドギャップ半導体研究会　第21回講演会
- Place of Presentation
  大阪市中央公会堂, 大阪府
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] "Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography"2012
- Author(s)
  S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara
- Organizer
  International Union of Materials Research Societies International Conference on Electronic Materials (IUMRS-ICEM2012)
- Place of Presentation
  PACIFICO YOKOHAMA, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] Effect of surface polarity on the conversion of threading dislocations in solution growth2012
- Author(s)
  Y.Yamamoto, S.Harada, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
- Organizer
  ECSCRM-2012
- Place of Presentation
  Saint-Petersburg, Russia
- Year and Date
  2012-09-04
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] 溶液成長過程における貫通転位変換を利用した高品質4H-SiC の実現2012
- Author(s)
  原田俊太, 山本祐治, 関和明, 田川美穂, 宇治原徹
- Organizer
  SiC 及び関連ワイドギャップ半導体研究会第21回講演会
- Place of Presentation
  大阪市中央公会堂
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-23246004
[Presentation] Highly polarized and high quantum efficiency electron source using transmission-type photocathode2011
- Author(s)
  X.G.Jin, T.Ujihara, Y.Takeda, 他
- Organizer
  2^<nd> International Particle Accelerator Conference
- Place of Presentation
  San Sebastian (Spain)
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] 透過光型フォトカソードを用いた高スピン偏極・高輝度電子源の開発現状2011
- Author(s)
  金, 宇治原, 竹田, 他
- Organizer
  第8回日本加速器学会
- Place of Presentation
  つくば国際会議場(茨城県)
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] 4 times improvement of quantum efficiency in high spin-polarization transmission-type Photocathode2011
- Author(s)
  X.G.Jin, S.Fuchi, T.Ujihara, Y.Takeda, 他
- Organizer
  33^<rd> International Free Electron Laser Conference
- Place of Presentation
  上海(中国)
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] AlGaAs 中間層及びSi_3N_4 反射防止膜の導入による透過型GaAs/GaAsP 歪み超格子スピン偏極フォトカソードの量子効率向上2011
- Author(s)
  市橋史朗,金秀光,山本尚人,真野篤志, 桒原真人,渕真悟,宇治原徹,竹田美和
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学, 31a-ZA-13
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] Effect of inhomogeneous strain distribution on the thickness modulation in GaAs/GaAsP strained superlattice2011
- Author(s)
  X.G.Jin, T.Ujihara, Y.Takeda, 他
- Organizer
  24^<th> International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Kyoto (Japan)
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] 次世代パワーデバイス半導体SiCの溶液成長2010
- Author(s)
  宇治原徹
- Organizer
  日本金属学会・日本鉄鋼協会東海支部学術討論会「次世代自動車の普及と地球温暖化対策を目指す最先端材料研究」
- Place of Presentation
  名古屋名古屋大学
- Year and Date
  2010-02-23
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] 人工脂質二重膜における膜欠陥の低減と相分離ドメイン凝集への影響2010
- Author(s)
  内田昌志, 宇治原徹, 手老龍吾, 竹田美和
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-20656003
[Presentation] Laser light patterning on phase-separated domain in supported lipid bilayer2010
- Author(s)
  Masashi Uchida, Toru Ujihara, Ryugo Tero, Yoshikazu Takeda
- Organizer
  The 2010 International Chemical Congress of Pacific Basin Societies
- Place of Presentation
  Honolulu, Hawaii, USA
- Data Source
  KAKENHI-PROJECT-22656007
[Presentation] 光照射による人工脂質二重膜相分離ドメイン凝集制御における光強度の影響2009
- Author(s)
  内田昌志, 宇治原徹, 手老龍吾, 竹田美和
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-20656003
[Presentation] 固体基板上脂質二重膜における光照射による相分離ドメイン局所形成メカニズムの検討2009
- Author(s)
  宇治原徹, 山内庸詞, 内田昌志, 手老龍吾, 竹田美和
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学、茨城県
- Data Source
  KAKENHI-PROJECT-20656003
[Presentation] Active Control of Gel-Phase and Raft Domain Condensation in Supported Lipid Bilayer2009
- Author(s)
  宇治原徹
- Organizer
  2nd International Symposium, on Nanomedicine(ISNM2009)Asian Core Symposium -Nano and Biomedical Molecular Science-
- Place of Presentation
  Okazaki, Japan
- Data Source
  KAKENHI-PROJECT-20656003
[Presentation] Stacking Faults Induced by Polytype Transformation in 6H-SiC Grown on 3C-SiC with Solution Growth2009
- Author(s)
  Kazuaki Seki, Kai Morimoto, Toru Ujihara, Tomoharu Tokunaga, Katsuhiro Sasaki, Kotaro Kuroda, Yoshikazu Takeda
- Organizer
  13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM2009)
- Place of Presentation
  Nuremberg, Germany
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] Active Control of Gel-Phase and Raft Domain Condensation in Supported Lipid Bilayer2009
- Author(s)
  T. Ujihara
- Organizer
  2nd International Symposium on Nanomedicine (ISNM 2009) Asian Core Svmnosium
- Place of Presentation
  岡崎、日本
- Data Source
  KAKENHI-PROJECT-20056012
[Presentation] 3C-SiC種結晶上への溶液成長における多形変化2008
- Author(s)
  関和明, 田中亮, 宇治原徹, 徳永智春, 佐々木勝寛, 黒田光太郎, 竹田美和
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学, 愛知県
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] SiO2/Si基板上PSM-DOPC-Cholesterol系脂質二重膜における相分離ドメインの観察と制御2008
- Author(s)
  鈴木翔也、山内庸詞、宇治原徹、手老龍吾、竹田美和
- Organizer
  第55回応用物理学関係連合講演会(日大)
- Place of Presentation
  船橋・日大理工学部船橋キャンパス
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-18059013
[Presentation] 3C-SiC上の溶液成長における結晶方位と結晶内欠陥の成長多形への影響2008
- Author(s)
  関和明, 田中亮, 宇治原徹, 竹田美和
- Organizer
  第38回結晶成長国内会議
- Place of Presentation
  仙台市戦災復興記念館、宮城県
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] 電圧印加による人工脂質膜相分離ドメインのアクティブ制御2008
- Author(s)
  山内庸詞、鈴木翔也、宇治原徹、手老龍吾、竹田美和
- Organizer
  第55回応用物理学関係連合講演会(日大)
- Place of Presentation
  船橋・日大理工学部船橋キャンパス
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-18059013
[Presentation] 3C-SiC種結晶(001)面上への高品質3C-SiC低温溶液成長2008
- Author(s)
  田中亮, 関和明, 宇治原徹, 竹田美和
- Organizer
  第17回(2008年)SiC及び関連ワイドギャップ半導体講演会
- Place of Presentation
  大田区産業プラザ、東京都
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] 3C-SiC上の溶液成長における結晶方位と結晶内欠陥の成長多形への影響2008
- Author(s)
  関和明, 田中亮, 宇治原徹, 竹田美和
- Organizer
  第38回結晶成長国内会議
- Place of Presentation
  仙台市戦災復興記念館, 宮城県
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] 3C-SiC(111)面への溶液成長における多形変化と高密度積層欠陥の生成2008
- Author(s)
  関和明, 田中亮, 宇治原徹, 森本海, 徳永智春, 佐々木勝寛, 黒田光太郎、竹田美和
- Organizer
  第17回(2008年)SiC及び関連ワイドギャップ半導体講演会
- Place of Presentation
  大田区産業プラザ, 東京都
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] SiO2/Si基板上人工脂質膜相分離構造のドメインサイズにおける電圧印加効果2008
- Author(s)
  山内庸詞, 宇治原徹, 手老龍吾, 竹田美和
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学、愛知県
- Data Source
  KAKENHI-PROJECT-20656003
[Presentation] 3C-SiC種結晶上への溶液成長における多形変化2008
- Author(s)
  関和明, 田中亮, 宇治原徹, 徳永智春, 佐々木勝寛, 黒田光太郎, 竹田美和
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学、愛知県
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] Local Condensation of Artificial Raft Domains in Supported Lipid Bilayer under Light Irradiation in PSM-DOPC-Cholesterol System2008
- Author(s)
  T. Ujihara, et.al.
- Organizer
  International Union of Materials Research Societies International Conference in Asia
- Place of Presentation
  名古屋、日本
- Data Source
  KAKENHI-PROJECT-20056012
[Presentation] シングルステップTiO_2表面上でのリン脂質吸着ベシクルから平面二重膜への形状変化2008
- Author(s)
  手老龍吾、宇治原徹、宇理須恒雄
- Organizer
  日本化学会第88春季年会
- Place of Presentation
  東京・立教大池袋キャンパス
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-18656007
[Presentation] Solution growth on free-standing (001) 3C-SiC epilayers2008
- Author(s)
  R. Tanaka, K. Seki, T. Ujihara, Y. Takeda
- Organizer
  7th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Barcelona, Spain
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] (001)3C-SiC自立基板上への溶液成長における多形変化2008
- Author(s)
  田中亮, 関和明, 宇治原徹, 佐々木勝寛, 黒田光太郎, 竹田美和
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学、愛知県
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] 3C-SiC種結晶(001)面上への高品質3C-SiC低温溶液成長2008
- Author(s)
  田中亮, 関和明, 宇治原徹, 竹田美和
- Organizer
  第17回(2008年)SiC及び関連ワイドギャップ半導体講演会
- Place of Presentation
  大田区産業プラザ, 東京都
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] シングルステップTiO_2表面上でのリン脂質吸着ベシクルから平面二重膜への形状変化2008
- Author(s)
  手老龍吾、宇治原徹、宇理須恒雄
- Organizer
  日本化学会第88春季年会
- Place of Presentation
  東京・立教大池袋キャンパス
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-18059013
[Presentation] 3C-SiC(111)面への溶液成長における多形変化と高密度積層欠陥の生成2008
- Author(s)
  関和明、田中亮、宇治原徹、森本海、徳永智春、佐々木勝寛、黒田光太郎、竹田美和
- Organizer
  第17回(2008年)SiC及び関連ワイドギャップ半導体講演会
- Place of Presentation
  大田区産業プラザ、東京都
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] VLS法によるSiC単結晶の成長2008
- Author(s)
  小宮山聰, 吉川和男, 田中亮, 関和明, 宇治原徹
- Organizer
  第17回(2008年)SiC及び関連ワイドギャップ半導体講演会
- Place of Presentation
  大田区産業プラザ, 東京都
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] VLS法によるSiC単結晶の成長2008
- Author(s)
  小宮山聰、吉川和男、田中亮、関和明、宇治原徹
- Organizer
  第17回(2008年)SiC及び関連ワイドギャップ半導体講演会
- Place of Presentation
  大田区産業プラザ、東京都
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] (001)3C-SiC自立基板上への溶液成長における多形変化2008
- Author(s)
  田中亮, 関和明, 宇治原徹, 佐々木寛, 黒田光太郎, 竹田美和
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学, 愛知県
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] 電圧印加による人工脂質膜相分離ドメインのアクティブ制御2008
- Author(s)
  山内庸詞、鈴木翔也、宇治原徹、手老龍吾、竹田美和
- Organizer
  第55回応用物理学関係連合講演会(日大)
- Place of Presentation
  船橋・日大理工学部船橋キャンパス
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-18656007
[Presentation] Polytype transformation during solution growth on 3C-SiC seed crystals2008
- Author(s)
  K. Seki, R. Tanaka, T. Ujihara, Y. Takeda
- Organizer
  7th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Barcelona, Spain
- Data Source
  KAKENHI-PROJECT-20686003
[Presentation] SiO2/Si基板上PSM-DOPC-Cholesterol系脂質二重膜における相分離ドメインの観察と制御2008
- Author(s)
  鈴木翔也、山内庸詞、宇治原徹、手老龍吾、竹田美和
- Organizer
  第55回応用物理学関係連合講演会(日大)
- Place of Presentation
  船橋・日大理工学部船橋キャンパス
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-18656007
[Presentation] Fabrication of DMPC-DOPC Lipid Binary Bilayers Supported on SiO2/Al/Si Substrate for Electrical Control of Phase-Separated Structure2007
- Author(s)
  Yoji Yamauchi, Shoya Suzuki, Toru Ujihara, Ryugo Tero
- Organizer
  18th MRS-J Symposium
- Place of Presentation
  東京・日大理工学部
- Data Source
  KAKENHI-PROJECT-18656007
[Presentation] Supported planar lipid bilayerのドメイン形状への基板表面構造の影響2007
- Author(s)
  手老龍吾、宇治原徹、宇理須恒雄
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌・北工大
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-18059013
[Presentation] Supported lipid bilayer membranes on SiO_2 and TiO_2: Effects of substrate surface chemical species and atomic structures (Invited)2007
- Author(s)
  Ryugo Tero, Toru Ujihara
- Organizer
  SPIE Optic East 2007
- Place of Presentation
  Boston,USA
- Year and Date
  2007-09-12
- Data Source
  KAKENHI-PROJECT-18656007
[Presentation] 高濃度Ca2+緩衝液を用いたべシクル展開法による平面状脂質二重膜の形成2007
- Author(s)
  鈴木翔也、山内庸詞、宇治原徹、手老龍吾、竹田美和
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌・北工大
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-18656007
[Presentation] Supported planar lipid bilayerのドメイン形状への基板表面構造の影響2007
- Author(s)
  手老龍吾、宇治原徹、宇理須恒雄
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌・北工大
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-18656007
[Presentation] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering2007
- Author(s)
  A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
- Organizer
  The 19th International Conference on Indium Phosphide and Related Materials, PB29
- Place of Presentation
  Matsue, Japann
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Supported planar lipid bilayers on step-and-terrace TiO_2 surfaces2007
- Author(s)
  Ryugo Tero, Toru Ujihara
- Organizer
  The 234rd American Chemical Society National Meeting
- Place of Presentation
  Boston,USA
- Year and Date
  2007-08-20
- Data Source
  KAKENHI-PROJECT-18656007
[Presentation] 高濃度Ca2+緩衝液を用いたベシクル展開法による平面状脂質二重膜の形成2007
- Author(s)
  鈴木翔也、山内庸詞、宇治原徹、手老龍吾、竹田美和
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌・北工大
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-18059013
[Presentation] Supported lipid bilayer membranes on SiO_2 and TiO_2: Effects of substrate Surface chemical species and atomic structures (Invited)2007
- Author(s)
  Ryugo Tero, Toru Ujihara
- Organizer
  SPIE Optic East 2007
- Place of Presentation
  Boston, USA
- Year and Date
  2007-09-12
- Data Source
  KAKENHI-PROJECT-18059013
[Presentation] Supported planar lipid bilayers on step-and-terrace TiO_2 surfaces2007
- Author(s)
  Ryugo Tero, Tom Ujihara
- Organizer
  The 234rd American Chemical Society National Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2007-08-20
- Data Source
  KAKENHI-PROJECT-18059013
[Presentation] シングルステップTiO_2表面上に形成した平面脂質二重膜の形状と相分離構造2007
- Author(s)
  手老龍吾、宇治原徹、宇理須恒雄
- Organizer
  ナノ学会第5回大会
- Place of Presentation
  つくば・つくば国際会議場
- Year and Date
  2007-05-22
- Data Source
  KAKENHI-PROJECT-18656007
[Presentation] Fabrication of DMPC-DOPC Lipid Binary Bilayers Supported on SiO2/Al/Si Substrate for Electrical Control of Phase-Separated structure2007
- Author(s)
  Yoji Yamauchi, Shoya Suzuki, Toru Ujihara, Ryugo Tero
- Organizer
  18th MRS-J Symposium
- Place of Presentation
  東京・日大理工学部
- Data Source
  KAKENHI-PROJECT-18059013
[Presentation] シングルステップTiO_2表面上に形成した平面脂質二重膜の形状と相分離構造2007
- Author(s)
  手老龍吾、宇治原徹、宇理須恒雄
- Organizer
  ナノ学会第5回大会
- Place of Presentation
  つくば・つくば国際会議場
- Year and Date
  2007-05-22
- Data Source
  KAKENHI-PROJECT-18059013
[Presentation] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering2007
- Author(s)
  A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
- Organizer
  2007 Indium Phosphide and Related Materials 2007(IPRM2007)
- Place of Presentation
  PB29, Kunibiki Messe, Matsue, Japan
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] N-Type Doping of 4H-SiC by the Top-Seeded Solution Growth Technique
- Author(s)
  K. Kusunoki, K. Kamei, K. Seki, S. Harada, and T. Ujihara
- Organizer
  the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
- Place of Presentation
  宮崎、日本
- Year and Date
  2013-09-29 – 2013-10-04
- Data Source
  KAKENHI-PROJECT-25249034
[Presentation] High quality SiC crystal grown by solution method
- Author(s)
  Toru Ujihara
- Organizer
  International Conference on Chemical, Materials and Bio-Sciences for Sustainable Development
- Place of Presentation
  Solarpul, Indo
- Year and Date
  2015-01-08 – 2015-01-10
- Invited
- Data Source
  KAKENHI-PROJECT-25249034

1. NAKAJIMA Kazuo (80311554)

# of Collaborated Projects: 7 results

# of Collaborated Products: 47 results
2. USAMI Noritaka (20262107)

# of Collaborated Projects: 6 results

# of Collaborated Products: 65 results
3. HARADA Shunta (30612460)

# of Collaborated Projects: 6 results

# of Collaborated Products: 80 results
4. TAKEDA Yoshikazu (20111932)

# of Collaborated Projects: 5 results

# of Collaborated Products: 18 results
5. TABUCHI Masao (90222124)

# of Collaborated Projects: 5 results

# of Collaborated Products: 3 results
6. SAZAKI Gen (60261509)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
7. TERO Ryugo (40390679)

# of Collaborated Projects: 3 results

# of Collaborated Products: 23 results
8. FUCHI Shingo (60432241)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results
9. 岡野泰則 (90204007)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results
10. KATO Masashi (80362317)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
11. JIN Xiugaung (20594055)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
12. SASAKI Katsuhiro (00211938)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. OKUDA Hiroshi (50214060)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. Kamei Kazuhito (10527576)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
15. MIYASHITA Satoru (00219776)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. MATSUBARA Eiichiro (90173864)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. SAKURAI Masaki (80235225)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. KOH Shinji (50323663)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. NAKAGAWA Kiyokazu (40324181)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. SHISHIDO Toetsu (50125580)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
22. UDA Satoshi (90361170)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. NAKANISHI Tsutomu (40022735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
24. YAMAMOTO Masahiro (00377962)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
25. KOBAYAKAWA Hisashi (50022611)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. HORINAKA Hiromichi (60137239)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
27. KURIKI Masao (80321537)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
28. 北原邦紀 (60304250)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. 藤原航三 (70332517)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 長田俊人 (00192526)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. 篠田弘造 (10311549)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
32. 高嶋圭史 (40303664)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
33. 佐藤正英 (20306533)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
34. 稲富裕光 (50249934)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
35. 烏山昌幸 (40628640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
36. 河村貴宏 (80581511)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
37. 沓掛健太朗 (00463795)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
38. ISHIKAWA Hiroshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
39. 田中信夫

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Ujihara Toru 宇治原 徹

UJIHARA Toru 宇治原 徹

Research Projects

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Co-Researchers

インターカレーションによる熱伝導可変メカニズムの解明と新規デバイス構造の提案Principal Investigator

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Variable Thermal Conduction Devices by Intercalation into Oxide MaterialsPrincipal Investigator

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Complex crystal growth modeling and process design in latent spacePrincipal Investigator

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Thermal switching device based on thermal properties change by intercalationPrincipal Investigator

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Revolution of semiconductor bulk crystal growth technique by transport phenomena combined with information technology

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Method of Crystal Growth InformaticsPrincipal Investigator

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Two-step excitation phenomenon observed by VPS method in inter-band solar cellsPrincipal Investigator

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Quantitative evaluation of conduction band structure with visible-light photoelectron spectroscopyPrincipal Investigator

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The high-speed and high-accuracy evaluation of conduction band in semiconductor by visible-light photoemission spectroscopyPrincipal Investigator

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In-situ observation of threading dislocation conversion in high-quality SiC growthPrincipal Investigator

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High-quality and Low-resistant SiC crystal

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Energy spectroscopy of electrons in conduction band of solar cell materials based on quantum structurePrincipal Investigator

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Improvement of quantum efficiency of super-high brightness and high spin-polarization photocathodes

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Ujihara Toru 宇治原徹

UJIHARA Toru 宇治原徹