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NIU Hirohiko  丹生 博彦

ORCIDConnect your ORCID iD *help
… Alternative Names

丹生 博彦  ニウ ヒロヒコ

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Researcher Number 40047618
Other IDs
External Links
Affiliation (based on the past Project Information) *help 2002 – 2003: Himeji Inst. Tech., Grad. School of Eng.., Prof., 工学研究科, 教授
2000 – 2001: 姫路工業大学, 工学部, 教授
1996 – 1997: 姫路工業大学, 工学部, 教授
1989: 姫路工業大学, 工学部, 講師
1986: 姫路工大, 工学部, 助手
Review Section/Research Field
Principal Investigator
電子デバイス・機器工学 / Electronic materials/Electric materials / 電子機器工学
Except Principal Investigator
Electronic materials/Electric materials / Science and Engineering
Keywords
Principal Investigator
MOCVD / MFS型デバイス / PZT薄膜 / MFSデバイス / TiO_2 thin film / PFM observations / MFS device / A1_2O_3 thin film / PZT thin film / MFIS structure … More / Ferroelectric gate FET / MOCVD法 / 強誘電性のAFM観察 / TiO_2薄膜 / PFM観察 / Al_2O_3薄膜 / MFIS構造 / 強誘電体ゲートFET / Ir electrode / PZT thin films / Semiconductor interface / Ferroelectric thin films / MFS-Device / Ir / 強誘電体 / Ir電極 / 半導体界面 / 強誘電体薄膜 / 位相による位置情報 / 素子感度の調整 / MOS型光位置センサ / MOS型位置センサ / 二次元位置センサ / 光位置センサ … More
Except Principal Investigator
MOCVD / MOCVD法 / 二段階成長法 / Ir薄膜 / 低温成長 / 強誘電性 / 圧電応答顕微鏡 / ferroelectric thin film memory / three-dimensional capacitor / ferroelectric capacitor / Ir thin film step coverage / PZT thin film / low temperature growth / 段差被膜性 / Pb(Zr, Ti)O_3(PZT)薄膜 / NOCVD法 / PZTキャパシタ / Ir系電極 / 強誘電体薄膜メモリ / 立体構造キャパシタ / 強誘電体キャパシタ / 段差被覆性 / PZT薄膜 / 低音成長 / ultra thin PZT films / polarization reversal process / piezoresponse / ferroelectricity / grain boundary / grain size / Pb(Zr,Ti)O_3(PZT) thin films / 原子層ステップ / エピタキシャル単結晶PZT薄膜 / 初期成長過程 / PbTiO_3初期核 / グレインサイズの制御 / 強誘電体PZT薄膜 / エピタキシャルPZT薄膜 / グレインサイズ制御 / Pb(Zr, Ti)O_3(PZT) / 強誘電体メモリ / 強誘電体薄膜 / PZT極薄膜 / 分極反転機構 / 圧電応答 / グレインバウンダリ / グレインサイズ / Pb(Zr, Ti)O_3薄膜 / 圧電振動応答 / 成長機構 / 島状核 / 立体構造PZTキャパシタ / Stranski-Krastanov成長 / Volmer-Waber成長 / 三次元キャパシタ / 高品質強誘電体薄膜 / エピタキシャル成長 / 自己集合 / ナノ構造 / 極薄膜 / Pb(Zr,Ti)O_3 / 強誘電体 Less
  • Research Projects

    (7 results)
  • Co-Researchers

    (6 People)
  •  Low-Temperature Growth of Ferroelectric and Electrode Thin Films by MOCVD and Their Application to Three-Dimensional High Density Memories

    • Principal Investigator
      SHIMIZU Masaru
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Himeji Institute of Technology
  •  MOCVD法による高品質強誘電体薄膜の作製と物性評価

    • Principal Investigator
      SHIMIZU Masaru
    • Project Period (FY)
      2000 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Himeji Institute of Technology
  •  Study on the Influence of Grain Boundary of Ferroelectric Thin Films on Elelectrical Properties and Its Application to Memory Devices

    • Principal Investigator
      SHIMIZU Masaru
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Himeji Institute of Technology
  •  Analysis and Control of Ferroelectric/Semiconductor (Metal) Interface for Their Device-ApplicationPrincipal Investigator

    • Principal Investigator
      NIU Hirohiko
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Himeji Institute of Technology
  •  Analysis and Control of Ferroelectric/Semiconductor(Metal)Interface for Their Device-ApplicationPrincipal Investigator

    • Principal Investigator
      NIU Hirohiko
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Himeji Institute of Technology
  •  走査を必要としないMOS型二次元光位置センサの開発Principal Investigator

    • Principal Investigator
      丹生 博彦
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Institution
      Himeji Institute of Technology
  •  横方向光起電力効果を利用したMOS型光位置センサの開発Principal Investigator

    • Principal Investigator
      丹生 博彦
    • Project Period (FY)
      1986
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子機器工学
    • Research Institution
      Himeji Institute of Technology
  • 1.  SHIMIZU Masaru (30154305)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 2.  FUJISAWA Hironori (30285340)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 3.  松田 哲郎 (10047582)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  安達 正利 (90026287)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  FUJIMORI Yoshikazu
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  KADOKURA Hidekimi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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