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IMAI Shigeru  今井 茂

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IMAI Sigeru  今井 茂

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Researcher Number 40223309
Other IDs
Affiliation (Current) 2025: 立命館大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help 2002 – 2004: 立命館大学, 理工学部, 教授
2001: 立命館大学, 理工学部, 助教授
1996 – 1998: 立命館大学, 理工学部, 助教授
1992 – 1995: 東京工業大学, 工学部, 助手
1994: 東京工業大学, 工学部電子物理工学科, 助手
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Except Principal Investigator
Applied materials science/Crystal engineering / Electronic materials/Electric materials / 電子機器工学 / 電子材料工学
Keywords
Principal Investigator
ゲルマニウム / 原子層エッチング / シリコン / 原子層エピタキシ- / dimethylaluminiumhydride / atomic layer deposition / Aluminium / 原子層堆積 / 原子状水素 / ジメチルアルミニウムハイライド … More / ジメチルアルミニウムハイドライド / 原子層堆積法 / アルミニウム / 極短周期超格子 / 塩素 / 単原子層超格子 / ヘテロ界面 … More
Except Principal Investigator
Si / Germanium / Silicon / ゲルマニウム / シリコン / InGaN / InN / HFET / RF-MBE / ALE / ヘテロ接合 / Ge人工結晶 / Atomic Hydrogen / Atomic Layr Epitaxy / 原子状水素 / 原子層成長 / crystal growth / quantum well / heterostructure / bandqap / Full Band Monte Carlo Simulation / 二次元電子ガス / GaN / AlGaN / 低温中間層 / 窒化 / 最大ドリフト速度 / モンテカルロシミュレーション / AlNバッファ / Si基板 / 極性 / バンドギャツプ / 貫通転位 / 量子井戸構造 / InAlN / 臨界膜厚 / 結晶成長 / 量子井戸 / ヘテロ構造 / バンドギャップ / 窒化インジウムガリウム / 窒化インジウム / Hetero Interface / Manmade Crystal / Hetero Structure / 超格子 / 人工結晶 / 原子層エピロキシ- / AES / 原子層エピタキシ- / Ge manmade Crystal / Tight Binding sps^* Model / Electronic Structure / Light Emission / 発光デバイス / 溶融再結晶化法 / 発光特性 / 多結晶シリコン / レーザ結晶化 / エキシマレーザ / 強束縛近似 / 電子構造 / 発光 / Hetero Epitaxy / ジエチルゲルマン / ジクロロシラン / ヘテロ成長 / 偏析 / 原子層エッチング / ヘテロ界面 / オージェ光電子分光 Less
  • Research Projects

    (9 results)
  • Co-Researchers

    (11 People)
  •  Study on fabrication of heterostructures based on InN, GaN and alloys and applications for HFET

    • Principal Investigator
      NANISHI Yasushi
    • Project Period (FY)
      2001 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Ritsumeikan University
  •  Atomic layer deposition of AluminiumPrincipal Investigator

    • Principal Investigator
      IWAI Shigeru
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Ritsumeikan University
  •  界面ゆらぎを完全に除去したIV族半導体の極短周期超格子の作製Principal Investigator

    • Principal Investigator
      今井 茂
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Ritsumeikan University
  •  IV族半導体の単原子層超格子の作製Principal Investigator

    • Principal Investigator
      今井 茂
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tokyo Institute of Technology
  •  Preparation and Characterization of Si-based Manmade Crystals

    • Principal Investigator
      MATSUMURA Masakiyo
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
  •  深さ方向分解能の高いオージェ電子分光法によるSi/Geヘテロ界面の評価

    • Principal Investigator
      UCHIDA Sasutaka
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Teikyo University of Science & Technology
  •  1原子寸法オーダーで急峻なシリコン/ゲルマニウムヘテロ界面の形成法に関する研究Principal Investigator

    • Principal Investigator
      今井 茂
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tokyo Institute of Technology
  •  Atomic-Layr-Epitaxy of Group VI Semiconductors Using Ultra-Activ Gas

    • Principal Investigator
      MATSUMURA Masakiyo
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Tokyo Institute of Technology
  •  Research of High-Efficiency Silicon-Based Light-Emitting Devices

    • Principal Investigator
      MATSUMURA Masakiyo
    • Project Period (FY)
      1992 – 1994
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子機器工学
    • Research Institution
      Tokyo Institute of Technology
  • 1.  UCHIDA Sasutaka (80134823)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 2.  MATSUMURA Masakiyo (30110729)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 3.  SUGIURA Osamu (10187643)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  SUGAHARA Satoshi (40282842)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  NANISHI Yasushi (40268157)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  TAKAKURA Hideyuki (30112022)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  ARAKI Tsutomu (20312126)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  SUZUKI Akira (10111931)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  HARIMA Hiroshi (00107351)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  寺口 信明
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  鈴木 章
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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