YANO Hiroshi 矢野裕司

… Alternative Names

Yano Hiroshi 矢野裕司

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Researcher Number	40335485
Other IDs
External Links
Affiliation (Current)	2025: 筑波大学, 数理物質系, 教授
Affiliation (based on the past Project Information) *help	2021 – 2024: 筑波大学, 数理物質系, 准教授 2016 – 2019: 筑波大学, 数理物質系, 准教授 2013: 筑波大学, 数理物質系, 准教授 2011 – 2012: 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 2010: 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 2007 – 2009: 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 2003 – 2006: 奈良先端科学技術大学院大学, 物質創成科学研究科, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Electron device/Electronic equipment / Applied materials science/Crystal engineering / Basic Section 21010:Power engineering-related / Science and Engineering
Keywords	Principal Investigator MOSFET / 超接合 / 炭化ケイ素 / 界面準位 / MOS構造 / チャネル移動度 / シリコンカーバイド / しきい値電圧変動 / 超接合MOSFET / 相補型インバータ … More / SiC / MOS界面 / 電子・電気材料 / pMOS / ｐ型ＭＯＳ / パワーデバイス / 炭化珪素 / リン / しきい値変動 / UMOSFET / トレンチ / 界面遷移層 / NOアニール / CVD酸化膜 / (11-20)面 / 界面準位密度 / MOS … More Except Principal Investigator バイオミネラリゼーション / フェリチンタンパク / バイオナノプロセス / ボトムアップ / ディスプレイ / 自己組織化 / bio-mineralization / self assemble / bottom-up / Bio-nano process / 薄膜トランジスタ / 量子ドット / 結晶化 / シリコン薄膜 / SiC/SiO2界面 / 引っ張り応力、せん断応力 / アルミ電極と銅電極 / TCADシミュレーション / 電気－熱－応力連成解析 / 負荷短絡破壊 / ゲートもれ電流 / SiCMOS結晶面 / ゲート底部電界保護層 / NIT密度 / Jd-Vgs特性 / 負荷短絡試験 / SiC-MOSFET / 残留ダメージ / 機械応力 / 負荷短絡 / 高信頼性特性 / SiC MOSFET / Ni catalyst / Nano Particle / System On Panel / Display / Metal Induced Crystalization / Poly silicon film / Thin Film Transistor / Ferritin Protein / シリサイド / 固相成長 / ニッケル / Ni触媒 / ナノ粒子 / システムオンパネル / 金属誘起結晶化法 / 多結晶シリコン薄膜 / floating gate transistor / Quntum dot / フローティグゲートトランジスタ / フローティングゲートトランジスタ / plasma treatment / ferritin protein / バイオナノ / プラズマ / バイオメネラリゼーション / 積層シリコン薄膜 / ファイバー / 多結晶 / 三次元素子 / グリーンレーザ / フォトダイオード / 非二次元基板 / 多結晶シリコン / 三次元デバイス / 薄膜フォトダイオード / レーザ結晶化 / トンネル現象 / 電子デバイス・集積回路 / コバルト / MOSデバイス / 走査型トンネル顕微鏡 / ケルビンプローブ顕微鏡 / 走査型プローブ顕微鏡 / クーロンブロケード / 単電子 / MOSトランジスタ / 配置制御 / ナノドット / 不揮発 / フェリチン / 自己組織化材料 / バイオテクノロジー / 微細加工 / 半導体 / 低温結晶化 / 抵抗変化型メモリ / タンパク / メモリ / 半導体デバイス / 生体超分子 Less

Development of one-chip complementary inverters using SiC lateral super-junction power MOSFETsPrincipal Investigator
- Principal Investigator
  
  矢野裕司
- Project Period (FY)
  2022 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  University of Tsukuba
Study on the effect of residual damage on reliabilities in short-circuited SiC MOSFETs
- Principal Investigator
  
  岩室憲幸
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21010:Power engineering-related
- Research Institution
  University of Tsukuba
Fundamental research and development of low-loss p-type SiC superjunction power MOSFETsPrincipal Investigator
- Principal Investigator
  
  Yano Hiroshi
- Project Period (FY)
  2016 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
Elimination of interface defects at SiC/insulator by introducing phosphorus and other atoms toward innovation of power MOSFETsPrincipal Investigator
- Principal Investigator
  
  YANO Hiroshi
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
  Nara Institute of Science and Technology
Laser Crystallization of non two-dimensional Si substrates and their device application
- Principal Investigator
  
  URAOKA Yukiharu
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nara Institute of Science and Technology
Nano structure fabrication by Self-assembling ability
- Principal Investigator
  
  YUKIHARU Uraoka (URAOKA Yukiharu)
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nara Institute of Science and Technology
Random Tunneling Conduction in 2 Dimensional Bio-nano Dot Arrays and Application to Stochastic Resonant Tunneling Devices
- Principal Investigator
  
  FUYUKI Takashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nara Institute of Science and Technology
超低損失パワーデバイスを目指したSiCトレンチMOS構造の研究Principal Investigator
- Principal Investigator
  
  矢野裕司
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nara Institute of Science and Technology
Research of Bio-nano Display using Ferritin Protein
- Principal Investigator
  
  URAOKA Yukiharu
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nara Institute of Science and Technology
新結晶面を有するSiCのMOS構造電子物性の制御Principal Investigator
- Principal Investigator
  
  矢野裕司
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nara Institute of Science and Technology
Two dimensional crystallization of ferritin protein for nano-scale process in semiconductor fabrication
- Principal Investigator
  
  URAOKA Yukiharu
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nara Institute of Science and Technology
Self assembly of quantum dot and application to electron device using bio-nano process
- Principal Investigator
  
  FUYUKI Takashi
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nara Institute of Science and Technology

[Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基板・界面効果-(分担:第2編、第1章、第4節SiCデバイスプロセスにおける新規表面・界面改質技術)2013
- Author(s)
  矢野裕司
- Publisher
  エヌ・ティー・エス
- Data Source
  KAKENHI-PROJECT-23760283
[Book] ポストシリコン半導体　－ナノ成膜ダイナミクスと基板・界面効果－2013
- Author(s)
  矢野裕司　（他　全57名）
- Total Pages
  510
- Publisher
  エヌ・ティー・エス
- Data Source
  KAKENHI-PROJECT-23760283
[Book] SiCパワーデバイスの開発と最新動向　－普及に向けたデバイスプロセスと実装技術－2012
- Author(s)
  矢野裕司　（岩室憲幸監修）
- Publisher
  S&T出版
- Data Source
  KAKENHI-PROJECT-23760283
[Book] 「SiCパワーデバイスの開発と最新動向-普及に向けたデバイスプロセスと実装技術-」岩室憲幸監修(分担:第2章-第4節MOS界面欠陥の低減技術と高品質化)2012
- Author(s)
  矢野裕司
- Publisher
  S&T出版
- Data Source
  KAKENHI-PROJECT-23760283
[Journal Article] ＋<i>α</i> research techniques for MOS interface trap characterization by charge pumping method2024
- Author(s)
  矢野裕司
- Journal Title
  
  Oyo Buturi
  
  Volume: 93 Issue: 3 Pages: 179-183
- DOI
  10.11470/oubutsu.93.3_179
- ISSN
  0369-8009, 2188-2290
- Year and Date
  2024-03-01
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K22810
[Journal Article] Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs2020
- Author(s)
  Nemoto Hiroki、Okamoto Dai、Zhang Xufang、Sometani Mitsuru、Okamoto Mitsuo、Hatakeyama Tetsuo、Harada Shinsuke、Iwamuro Noriyuki、Yano Hiroshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 4 Pages: 044003-044003
- DOI
  10.35848/1347-4065/ab7ddb
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Investigation of UIS Capability for -600V Class Vertical SiC p-channel MOSFET2019
- Author(s)
  Yao Kailun、Yano Hiroshi、Iwamuro Noriyuki
- Journal Title
  
  2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
  
  Volume: ー Pages: 187-190
- DOI
  10.1109/ispsd.2019.8757607
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors2018
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- NAID
  210000149219
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors2018
- Author(s)
  Y. Karamoto, X. Zhang, D. Okamoto, M. Sometani, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- NAID
  210000149221
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Investigation of Robustness Capability of -730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications2017
- Author(s)
  J. An, M. Namai, H. Yano, and N. Iwamuro
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 64 Issue: 10 Pages: 4219-4225
- DOI
  10.1109/ted.2017.2742542
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Characterization of Near-Interface Traps at 4H-SiC Metal-Oxide-Semiconductor Interfaces Using a Modified Distributed Circuit Model2017
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, R. Kosugi, N. Iwamuro, and H. Yano
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 10 Issue: 6 Pages: 064101-064101
- DOI
  10.7567/apex.10.064101
- NAID
  210000135889
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Reduction of SiC-MOS Interface Traps and Improved MOSFET Performance by Phosphorus Incorporation into Gate Oxides2014
- Author(s)
  矢野裕司,畑山智亮,冬木隆
- Journal Title
  
  Hyomen Kagaku
  
  Volume: 35 Issue: 2 Pages: 90-95
- DOI
  10.1380/jsssj.35.90
- NAID
  130004785041
- ISSN
  0388-5321, 1881-4743
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760283
[Journal Article] Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 annealing2013
- Author(s)
  H. Yano, T. Araoka, T. Hatayama, and T. Fuyuki
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 740-742 Pages: 727-732
- DOI
  10.4028/www.scientific.net/msf.740-742.727
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760283
[Journal Article] Effect of Interface Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices2013
- Author(s)
  T. Akagi, H. Yano, T. Hatayama, and T. Fuyuki
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 740-742 Pages: 695-698
- DOI
  10.4028/www.scientific.net/msf.740-742.695
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760283
[Journal Article] Characterization of POCl3- and NO-annealed 4H-SiC MOSFETs by Charge Pumping Technique2013
- Author(s)
  A. Osawa, H. Yano, T. Hatayama, and T. Fuyuki
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 740-742 Pages: 541-544
- DOI
  10.4028/www.scientific.net/msf.740-742.541
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760283
[Journal Article] Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide2012
- Author(s)
  D. Okamoto, H. Yano, T. Hatayama, and T. Fuyuki
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 未定
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760283
[Journal Article] Effect of POCl3 annealing on Reliability of Thermal Oxides Grown on 4H-SiC2012
- Author(s)
  R. Morishita, H. Yano, D. Okamoto, T. Hatayama, and T. Fuyuki
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 未定
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760283
[Journal Article] POCl3 Annealing as a New Method for Improving 4H-SiC MOS Device Performance2012
- Author(s)
  H. Yano, T. Hatayama, and T. Fuyuki
- Journal Title
  
  ECS Trans.
  
  Volume: 50 Issue: 3 Pages: 257-265
- DOI
  10.1149/05003.0257ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760283
[Journal Article] SiO2/p型4H-SiC界面特性におけるPOCl3アニールの効果2011
- Author(s)
  高上稔充, 矢野裕司, 畑山智亮, 冬木隆
- Journal Title
  
  信学技報
  
  Volume: 111 Pages: 11-15
- Data Source
  KAKENHI-PROJECT-23760283
[Journal Article] Comprehensive study of electroluminescence in multicrystalline silicon solar cells2009
- Author(s)
  A.Kitiyanan, A.Ogane, A.Tani, T.Hatayama, H.Yano, Y.Uraoka, T.Fuyuki
- Journal Title
  
  J.Appl.Phys 106
  
  Pages: 43717-43717
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article]2009
- Author(s)
  A. Kitiyanan, A. Ogane, A. Tani, T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki
- Journal Title
  
  J. Appl. Phys. 106
  
  Pages: 43717-43717
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs2008
- Author(s)
  D. Okamoto, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Journal Title
  
  IEEE Transaction Electron Device Vol.55,No.8
  
  Pages: 2013-2020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article]2008
- Author(s)
  M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. Sim Jung
- Journal Title
  
  J. Yeon Kwon, Jpn. J. Appl. Phys. Vol.47,No.8
  
  Pages: 6236-6240
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Thermal analysis of degradation in Ga_2O_3-In_2O_3-ZnO thin film transistors2008
- Author(s)
  M.Fujii, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki, J.Sim Jung, J.Yeon Kwon
- Journal Title
  
  Japanese Journal of Applied Physics Vol.47
  
  Pages: 6236-6240
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20246006
[Journal Article] Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC metal-oxide-semiconductor field effect transistors fabricated on 8° off substrates2007
- Author(s)
  H.Yano
- Journal Title
  
  Appl. Phys. Lett. 90・4
- Data Source
  KAKENHI-PROJECT-17760254
[Journal Article] Fabrication of Poly-Si Thin-Film Transistors on Quartz Fiber2007
- Author(s)
  Yuta Sugawara, Yukiharu Uraoka, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki
- Journal Title
  
  Aplied Physics Ltter 91
  
  Pages: 203518-203518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Low temperature poly-Si Thin Film Transistors flash memory with Si nanocrystal dot2007
- Author(s)
  Kazunori Ichikawa, Yukiharu Uraoka, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  Jpn. J. Appl. Phys. Lett. Vol.46,No.27
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Low-temperature poly-Si TFT flash memory w ith ferritin2007
- Author(s)
  Kazunori Ichikawa, Yukiharu Uraoka, Prakaipetch, Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, Ichiro Yamashita
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.46,No.34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing2007
- Author(s)
  Yuta Sugawara, Yukiharu Uraoka, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, A, Mimura
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46,No. 8
- NAID
  10018902932
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates2007
- Author(s)
  H.Yano
- Journal Title
  
  Mater. Sci. Forum 556-557
  
  Pages: 807-810
- Data Source
  KAKENHI-PROJECT-17760254
[Journal Article] Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing for High Performance Thin Film Transistors2007
- Author(s)
  Yuta Sugawara, Yukiharu Uraoka, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, Akio Mimura
- Journal Title
  
  IEEE EDL Vol.28,No.5
  
  Pages: 395-395
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Reliability of low temperature poly-Si Thin Film Transistors with ultrathin gate oxide2007
- Author(s)
  Hitoshi Ueno, Yuta Sugawara, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Tadashi Serikawa
- Journal Title
  
  pn. J. Appl. Phys. Vol.46,No.7A
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Low Temperature Poly-Si TFT Flash Memory with Si Nano crystal Dot2007
- Author(s)
  K.Ichikawa, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki
- Journal Title
  
  The proceeding of the 3^<rd> International TFT Conference
  
  Pages: 340-340
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Reliability Analysis of Ultra-Low-Temperature Poly-Si Thin Film Transistors2007
- Author(s)
  Hitoshi Ueno, Yuta Sugawara, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46,No. 3B
  
  Pages: 1303-1303
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Low-temperature poly-Si TFT flash memory with ferritin2007
- Author(s)
  Kazunori Ichikawa, Yukiharu Uraoka, Prakaipetch, Punchaipetch, H.iroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, Ichiro Yamashita
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 1804-806
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Fabrication of Poly-Si Thin-Film Transistors on Quartz Fiber2007
- Author(s)
  Yuta Sugawara, Yukiharu Uraoka^*, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki
- Journal Title
  
  Applied Physics Letters 91
  
  Pages: 203518-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Electron Injection into Si nanodot by side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  K.Ichikawa, P.Punchaipetch, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki
- Journal Title
  
  2005 International Meeting for Future of Electron Device, Kansai P-D7
  
  Pages: 97-97
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] シリコンナノクリスタルドット形成プロセスの低温化2005
- Author(s)
  向正人, 市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-P6-17
  
  Pages: 988-988
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] シリコンナノクリスタルドット形成プロセスの低温化2005
- Author(s)
  向正人, 市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-p6-17(未定)
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Electron Injection into Si nano dot fabricated by side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  International Meeting of Future Electron Device in Kansai P-D7
  
  Pages: 97-97
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Siナノドットメモリにおけるート酸化膜厚依存性2005
- Author(s)
  P.Punchaipetch, 市川和典, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-P6-19
  
  Pages: 988-988
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] High Temperature NO Annealing of Deposited SiO_2 and SiON Films on N-tybe 4H-SiC2005
- Author(s)
  H.Yano
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 685-688
- Data Source
  KAKENHI-PROJECT-15760222
[Journal Article] Electron Injection into Si nano dot fabricated by Side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  Kazunori Ichikawa, Masato Mukai, P.Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  IEEE/International Meeting for Future Electron Devices, Kansai P-D7
  
  Pages: 97-97
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Siナノドットメモリにおける-ト酸化膜厚依存性2005
- Author(s)
  p.punchaipetch, 市川和典, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-p6-18(未定)
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] 積層型Siナノドットフローティングゲートメモリにおける充放電特性評価2005
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-P6-19
  
  Pages: 988-988
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] 積層型Siナノドットフローティングゲートメモリにおける充放電特性評価2005
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-p6-19(未定)
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Electron Injection into Si nano dot fabricated by side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  International Meeting of Future Electron Device in Kansai (未定)
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Electron Injection into Si nano dot fabricated by Side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  Kazunori Ichikawa, Masato Mukai, P.Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  IEEE/International Meeting for Future Electron Devices, Kansai P-D7
  
  Pages: 97-97
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] Si nano-crystal dot memory fabricated by Side-wall Typed PECVD2004
- Author(s)
  Kazunori Ichikawa, Masato Mukai, P.Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  Technical Report of IEICE SDM2004-206
- NAID
  110003311202
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Plasma Nitridation of Gate Insulator on 4H-SiC2004
- Author(s)
  H.Yano
- Journal Title
  
  The 2004 International Meeting for Future Electron Devices, Kansai
  
  Pages: 61-62
- Data Source
  KAKENHI-PROJECT-15760222
[Journal Article] Si-Wall電極型PECVDによるSiナノドットにおける充放電特性評価2004
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第65回応用物理学関係連合講演会 1a-L-lO
  
  Pages: 754-754
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Side-Wall電極型PECVDによるSiナノドットメモリ2004
- Author(s)
  市川和典, 向正人, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆
- Journal Title
  
  電子情報通信学会信学技報 SDM2004-206
  
  Pages: 81-81
- NAID
  110003311202
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] Side-Wall電極型PECVDによるSiナノドットメモリ2004
- Author(s)
  市川和典, 向正人, p.punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆
- Journal Title
  
  電子情報通信学会信学技報 SDM2004-206
  
  Pages: 81-81
- NAID
  110003311202
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] Si-Wall電極型PECVDによるSiナノドットにおける充放電特性評価2004
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第65回応用物理学関係連合講演会 1a-L-10
  
  Pages: 754-754
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] リモートプラズマ法によるPLCVDHfSiO膜への窒素プロファイルの制御2004
- Author(s)
  P.Punchaipetch, 中村秀碁, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 堀井貞義
- Journal Title
  
  第65回応用物理学関係連合講演会 1p_C-7
  
  Pages: 679-679
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] Si nano-crystal dot memory fabricated by Side-wall Typed PECVD2004
- Author(s)
  Kazunori Ichikawa, Masato Mukai, P.Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  Technical Report of IEICE SDM2004-206
- NAID
  110003311202
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] シリコン窒化膜に埋め込まれたSiナノドットへの電子注入2004
- Author(s)
  P.Punchaipetch, 市川和典, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第65回応用物理学関係連合講演会 1a-L-10
  
  Pages: 754-754
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] シリコン窒化膜に埋め込まれたSiナノドットへの電子注入2004
- Author(s)
  P.Punchaipetch, 市川和典, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第65回応用物理学関係連合講演会 1a-L-11
  
  Pages: 754-754
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Radical Nitridation of Ultra-thin Gate Oxide on Silicon Carbide2004
- Author(s)
  H.Yano
- Journal Title
  
  2004 International Symposium on Nano Science and Technology
  
  Pages: 263-264
- Data Source
  KAKENHI-PROJECT-15760222
[Journal Article] 窒素励起活性種を用いたPLD-HfSixOy膜への窒素導入2004
- Author(s)
  中村秀碁, p.punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 堀井貞義
- Journal Title
  
  電子情報通信学会信学技報 SDM2004-45
  
  Pages: 57-57
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] プラズマ援用化学気相堆積法を用いて堆積したSiナノドットへの電子注入2004
- Author(s)
  市川和典, 猪飼順子, 彦野太樹夫, 矢野裕司, 畑山智亮, 冬木隆, 林司
- Journal Title
  
  第51回応用物理学会関係連合講演会 28p-ZH-2
  
  Pages: 959-959
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] Characterization of 4H-SiC MOSFETs with NO-annealed CVD Oxide
- Author(s)
  H.Yano
- Journal Title
  
  Materials Science Forum (掲載予定)
- Data Source
  KAKENHI-PROJECT-17760254
[Presentation] 4H-SiC横型p-ch SJ-MOSFETのゲート－ドレイン間寄生容量特性解析2024
- Author(s)
  森海斗, 岩室憲幸, 矢野裕司
- Organizer
  電気学会全国大会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] 4H-SiC横型p-ch SJ-MOSFETのオン抵抗と寄生容量の関係評価2023
- Author(s)
  森海斗, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] ACゲートストレスによるSiC MOSFETのしきい値電圧とサブスレッショルドスイングの変動評価2023
- Author(s)
  円城寺佑哉, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress2023
- Author(s)
  Yuya Enjoji, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2023 (ICSCRM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique2023
- Author(s)
  Atsuhiro Akiba, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2023 (ICSCRM 2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] チャージポンピング法を用いたpチャネルSiC MOSFETの界面特性評価2023
- Author(s)
  秋葉淳宏, 矢野裕司
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] Investigations of Residual Damage in SiC Trench MOSFETs after Single and Multiple Short-Circuit Stress2023
- Author(s)
  Mitsuki Takahashi, Shinsuke Harada, Hiroshi Yano and Noriyuki Iwamuro
- Organizer
  The 35th International Symposium on Power Semiconductor Devices & ICs
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K20927
[Presentation] Characterization of SiC MOS structures using p-channel devices2022
- Author(s)
  Hiroshi Yano
- Organizer
  The 10th Asia-Pasific Workshop on Widegap Semiconductors (APWS2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] モノリシック相補型インバータに向けた4H-SiC横型p-ch SJ-MOSFETの構造設計2022
- Author(s)
  森海斗, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第9回講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] 3レベルチャージポンピング法を用いたSiC MOSFETの界面特性評価：酸化膜窒化処理と界面欠陥量の関係2022
- Author(s)
  秋葉淳宏, 矢野裕司
- Organizer
  先進パワー半導体分科会第9回講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] SiCパワーデバイスの高性能化・高信頼化に向けた課題と取り組み2022
- Author(s)
  矢野裕司
- Organizer
  結晶加工と評価技術第145委員会第176回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] 3レベルチャージポンピング法を用いた4H-SiC MOSFETの界面近傍酸化膜トラップの酸化膜内密度分布の検討2022
- Author(s)
  秋葉淳宏, 矢野裕司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] ACゲートストレス印加によるSiC-MOSFETのしきい値電圧変動評価2022
- Author(s)
  円城寺佑哉, 岩室憲幸, 矢野裕司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] バイポーラACゲートストレス印加によるSiC-MOSFETのしきい値電圧変動評価2022
- Author(s)
  円城寺佑哉, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第9回講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] SiC pチャネルMOSFETの正孔輸送機構の解析2020
- Author(s)
  岡本大, 周星炎, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－第25回研究会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Influence of Interface Traps on Split C-V Characteristics of 4H-SiC MOSFETs2020
- Author(s)
  Gyozen Sai, Dai Okamoto, Noriyuki Iwamoro, and Hiroshi Yano
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] ｐチャネル4H-SiC MOSFETのチャネルドリフト移動度の導出と散乱機構の解明2019
- Author(s)
  周星炎, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 高速緩和なし法によるpチャネル4H-SiC MOSFETのしきい値電圧変動評価2019
- Author(s)
  坂田大輝, 岡本大, 染谷満, 岡本光央, 原田信介, 畠山哲夫, 根本宏樹, 張旭芳, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 界面近傍酸化膜トラップを考慮した4H-SiC MOSFETの3レベルチャージポンピング特性の解析2019
- Author(s)
  松谷優汰, 張旭芳, 岡本大, 岩室憲幸, 矢野裕司
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 界面近傍酸化膜トラップを考慮した4H-SiC MOSFETにおける3レベルチャージポンピング特性の解析2019
- Author(s)
  松谷優汰，張旭芳，岡本大，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs2019
- Author(s)
  Xingyan Zhou, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Noriyuki Iwamuro, Hirosi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜正孔リーク電流伝導機構の解析2019
- Author(s)
  根本宏樹, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Investigation of UIS Capability for -600V Class Vertical SiC p-Channel MOSFET2019
- Author(s)
  K. Yao, H. Yano, N. Iwamuro
- Organizer
  The 31st International Symposium on Power Semiconductor Devices & ICs (ISPSD2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Analysis of three-level charge pumping characteristics of 4H-SiC MOSFETs considering near-interface traps2019
- Author(s)
  Yuta Matsuya, Xufang Zhang, Dai Okamoto, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias2019
- Author(s)
  Hiroki Nemoto, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜正孔リーク電流伝導機構の解析2019
- Author(s)
  根本宏樹, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides2019
- Author(s)
  Xufang Zhang, Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Interface Characterization of Nitrided a- and m-Face 4H-SiC MOS Structures Using Distributed Circuit Mode2019
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－第24回研究会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method2019
- Author(s)
  Dai Okamoto, Hiroki Nemoto, Xufang Zhang, Xingyan Zhou, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Tetsuo Hatakeyama, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Investigation of Unclamped Inductive Switching Capability of Silicon Carbide MOSFETs2019
- Author(s)
  Kailun Yao, 矢野裕司, 岩室憲幸
- Organizer
  平成31年電気学会全国大会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜リーク電流伝導機構の解析2018
- Author(s)
  根本宏樹，岡本大，染谷満，木内祐治，岡本光央，畠山哲夫，原田信介，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜リーク電流伝導機構の解析2018
- Author(s)
  根本宏樹, 岡本大, 染谷満, 木内祐治, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Impact of passivation treatments on channel mobility for p-channel 4H-SiC MOSFETs2018
- Author(s)
  X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, Y. Karamoto, X. Zhang, N. Iwamuro, and H. Yano
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Hall効果測定によるpチャネル4H-SiC MOSFETのチャネル輸送機構の解明2018
- Author(s)
  周星炎，岡本大，畠山哲夫，染谷満，原田信介，岡本光央，張旭芳，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 電力用半導体SiCのゲート酸化膜漏れ電流機構の解析2018
- Author(s)
  矢野裕司
- Organizer
  第16回環境研究シンポジウム
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Difference of NIT Density Distribution in 4H-SiC MOS Interfaces for Si- and C-faces2018
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－　第23回研究会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Analysis of leakage current conduction mechanisms in thermally grown oxides on p-channel 4H-SiC MOSFETs2018
- Author(s)
  H. Nemoto, D. Okamoto, M. Sometani, Y. Kiuchi, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano,
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Mobility limiting mechanisms in p-channel 4H-SiC MOSFETs investigated by Hall-effect measurements2018
- Author(s)
  X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, X. Zhang, N. Iwamuro, and H. Yano
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Impact of Oxide Thickness on the Density Distribution of Near-interface Traps in 4H-SiC MOS Capacitors2017
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (2017IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] SiC MOSデバイスにおける界面欠陥と信頼性2017
- Author(s)
  矢野裕司
- Organizer
  第37回ナノテスティングシンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Verification of Modified Distributed Circuit Model for Near-Interface Traps in 4H-SiC MOS Interface2017
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－　第22回研究会
- Place of Presentation
  東レ研修センター（静岡県・三島市）
- Year and Date
  2017-01-20
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Analysis of Fast and Slow Responses of Interface Traps in p-type SiC MOS Capacitors by Conductance Method2017
- Author(s)
  Y. Karamoto, X.Zhang, D. Okamoto, M. Sometani, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (2017IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Verification of density distribution of near-interface traps in 4H-SiC MOS capacitors with different oxide thicknesses2017
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] コンダクタンス法によるp型SiC MOS界面の高速及び低速応答準位の解析2017
- Author(s)
  唐本祐樹, 張旭芳, 岡本大, 染谷満, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 4H-SiC MOS 界面におけるNIT 密度分布の膜厚依存性2017
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] コンダクタンス法によるp型SiC MOSキャパシタ界面特性の解析2017
- Author(s)
  唐本祐樹, 張旭芳, 岡本大, 染谷満, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 窒化したp 型SiC MOS キャパシタにおける反転層の形成2016
- Author(s)
  唐本祐樹, 岡本大, 原田信介, 染谷満, 畠山哲夫, 小杉亮治, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場（茨城県・つくば市）
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 窒化したp型SiC MOSキャパシタにおける反転層の形成2016
- Author(s)
  唐本祐樹, 岡本大, 原田信介, 染谷満, 畠山哲夫, 小杉亮治, 岩室憲幸, 矢野裕司
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Quantitative estimation of near-interface traps with distributed circuit model for 4H-SiC MOS capacitors2016
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場（茨城県・つくば市）
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors2016
- Author(s)
  X. F. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, R. Kosugi, N. Iwamuro, and H. Yano
- Organizer
  47th IEEE Semiconductor interface Specialist Conference (SISC2016)
- Place of Presentation
  San Diego (USA)
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors2016
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 直列抵抗を考慮したインピーダンス測定によるSiC MOS界面解析2016
- Author(s)
  岡本大, 張旭芳, 畠山哲夫, 染谷満, 原田信介, 小杉亮治, 岩室憲幸, 矢野裕司
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Comparative Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO- Annealed Gate Oxides2013
- Author(s)
  H. Yano, A. Osawa, T. Hatayama, and T. Fuyuki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
- Place of Presentation
  シーガイア･コンベンションセンター（宮崎県宮崎市）
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] 4H-SiC Si面上における表面ラフネスがMOSFETの電気特性に及ぼす影響2013
- Author(s)
  串阪哲也, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市）
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] SiC-MOSデバイスの界面欠陥低減技術2013
- Author(s)
  矢野裕司
- Organizer
  SEMI FORUM JAPAN 2013
- Place of Presentation
  グランキューブ大阪（大阪府大阪市）
- Invited
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] 界面にリンおよび窒素を導入した4H-SiC MOSFETの高温下におけるしきい値電圧不安定性の考察2013
- Author(s)
  金藤夏子, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市）
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] チャージポンピング法によるSiC-MOS界面特性の評価2013
- Author(s)
  矢野裕司, 畑山智亮, 冬木隆
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市）
- Invited
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] Comparative Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl_3- and NO- Annealed Gate Oxides2013
- Author(s)
  H. Yano, A. Osawa, T. Hatayama, and T. Fuyuki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
- Place of Presentation
  Miyazaki (Japan)
- Year and Date
  2013-10-02
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] NO/POCl3複合アニール処理したSiC MOSデバイスの電子注入耐性2012
- Author(s)
  荒岡幹, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  2012年春季　第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] POCl_3 Annealing as a New Method for Improving 4H-SiC MOS Device Performance2012
- Author(s)
  H. Yano, T. Hatayama, and T. Fuyuki
- Organizer
  PRiME 2012 (Pacific Rim Meeting on Electrochemical and Solid-State Science)
- Place of Presentation
  Honolulu (HI, USA)
- Year and Date
  2012-10-10
- Invited
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl_3 Annealing2012
- Author(s)
  H. Yano, T. Araoka, T. Hatayama, and T. Fuyuki
- Organizer
  The 9th European Conference on Silicon Carbide and Related Materials (ECSCRM2012)
- Place of Presentation
  Saint-Petersburg (Russia)
- Year and Date
  2012-09-05
- Invited
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] POCl3アニールした4H-SiC MOS構造の高電界ストレスによる電気特性への影響2011
- Author(s)
  森下隆至, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  SiC及び関連ワイドギャップ半導体研究会　第20回講演会
- Place of Presentation
  愛知県産業労働センター
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] SiO2/p型4H-SiC界面特性におけるPOCl3アニールの効果2011
- Author(s)
  高上稔充, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  SiC及び関連ワイドギャップ半導体研究会　第20回講演会
- Place of Presentation
  愛知県産業労働センター
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide2011
- Author(s)
  D. Okamoto, H. Yano, T. Hatayama, and T. Fuyuki
- Organizer
  2011 International Conference on Silicon Carbide and Related Materials (ICSCRM2011)(招待講演)
- Place of Presentation
  Cleveland (OH, USA)
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] 定電流ストレス印加によるPOCl3アニール4H-SiC熱酸化膜の劣化特性2011
- Author(s)
  森下隆至，矢野裕司，岡本大，畑山智亮，冬木隆
- Organizer
  平成23年秋季　第72回応用物理学会学術講演会
- Place of Presentation
  山形大学　小白川キャンパス
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] Effect of POCl3 annealing on Reliability of Thermal Oxides Grown on 4H-SiC2011
- Author(s)
  R. Morishita, H. Yano, D. Okamoto, T. Hatayama, and T. Fuyuki
- Organizer
  2011 International Conference on Silicon Carbide and Related Materials (ICSCRM2011)
- Place of Presentation
  Cleveland (OH, USA)
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide2011
- Author(s)
  D. Okamoto, H. Yano, K. Hirata, T. Hatayama, and T. Fuyuki
- Organizer
  IEEE EDS Kansai Chapter 第11回関西コロキアム電子デバイスワークショップ(招待講演)
- Place of Presentation
  大阪大学　中之島センター
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] SiO2/p型4H-SiC界面特性におけるPOCl3アニールの効果2011
- Author(s)
  高上稔充, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  電子情報通信学会　シリコン材料･デバイス研究会
- Place of Presentation
  奈良先端科学技術大学院大学
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] SiCデバイスプロセスの高度化に向けた新規表面・界面改質技術の開発2011
- Author(s)
  冬木隆, 矢野裕司, 畑山智亮
- Organizer
  SiC及び関連ワイドギャップ半導体研究会　第20回講演会(招待講演)
- Place of Presentation
  愛知県産業労働センター
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] 4H-SiC MOS界面特性におけるNOとPOCl3アニールの組み合わせ効果2011
- Author(s)
  荒岡　幹，矢野裕司，畑山智亮，冬木隆
- Organizer
  平成23年秋季　第72回応用物理学会学術講演会
- Place of Presentation
  山形大学　小白川キャンパス
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] 4H-SiC MOS界面特性におけるNOとPOCl3アニールの組み合わせ効果2011
- Author(s)
  荒岡幹, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  SiC及び関連ワイドギャップ半導体研究会　第20回講演会
- Place of Presentation
  愛知県産業労働センター
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] Pulsed Green Laser Anneling Crystallization of Double-Layered Silicon Thin Films2009
- Author(s)
  Y. Sugawara, H. Yano, T, Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  The 5^<th> International TFT Conference
- Place of Presentation
  Paris, France
- Year and Date
  2009-05-03
- Data Source
  KAKENHI-PROJECT-20246006
[Presentation] Improvement of interface properties by NH3 pretreatment for 4H-SiC(000-1) MOS structure2009
- Author(s)
  Y.Iwasaki, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki
- Organizer
  Solid State Device Meeting
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Pulsed Green Laser Anneling Crystallization of Double-Layered Silicon Thin Films2009
- Author(s)
  Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  5th International TFT Conference
- Place of Presentation
  Paris France
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Interface Properties of C-face 4H-SiC Metal-Oxide-Semiconductor Structures Prepared by Direct Oxidation in Nitric Oxide2009
- Author(s)
  D.Okamoto, H.Yano, Y.Oshiro, T.Hatayama, Y.Uraoka, T.Fuvuki
- Organizer
  Solid State Device Meeting
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation]2009
- Author(s)
  Y. Iwasaki, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  SSDM
- Place of Presentation
  Sendai
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Acceleration of Crystal Growth by Pulse Rapid Anneaking using Ni ferritin2008
- Author(s)
  M. Ochi, Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, I. Yamashita
- Organizer
  The 4th International TFT Conference
- Place of Presentation
  Seoul Korea
- Year and Date
  2008-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation]2008
- Author(s)
  Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Ji Sim Jung, Jang Yeon Kwon, Takashi Nakanishi, Mutsumi Kimura
- Organizer
  IMFEDK
- Place of Presentation
  Osaka
- Year and Date
  2008-05-23
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Improvement in Al2O3/Si Interfacial Characteristics by High Pressure Water Annealing2008
- Author(s)
  H. Itoh, Y, Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  The 4th International TFT Conference
- Place of Presentation
  Seoul Korea
- Year and Date
  2008-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Threshold Voltage Shift in Ga2O3-In2O3-ZnO(ZIGO) Thin Film Transitors under Constant Voltage Stress2008
- Author(s)
  M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. Jung, J. Kwon, T. Nakanishi, M. Kimura
- Organizer
  SSDM
- Place of Presentation
  Tsukuba
- Year and Date
  2008-09-08
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Low temperature poly-Si TFT flash memory with Ferritin Protein2008
- Author(s)
  K. Ichikawa, P. Punchaipetch, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, S. Kawabata, M. Yoshimau
- Organizer
  AMFPD
- Place of Presentation
  Tokyo(招待講演)
- Year and Date
  2008-07-02
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] New Synthesis Method using Microwave Thermo Catalysis for Inorganic EL Displays2008
- Author(s)
  Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Nobuyoshi Taguchi, R. Sugie, N. Muraki
- Organizer
  AMFPD
- Place of Presentation
  Tokyo
- Year and Date
  2008-07-02
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Green Laser Anneling Double-Layered X'tallization for System on Panerl2008
- Author(s)
  Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, A, Mimura
- Organizer
  The 4th International TFT Conference
- Place of Presentation
  Seoul Korea
- Year and Date
  2008-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Pulsed Green Laser Anneling Crystallization of Double-Layered Silicon Thin Films2008
- Author(s)
  Y.Sugawara, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki
- Organizer
  The 5^<th> International TFT Conference
- Place of Presentation
  Paris, France
- Year and Date
  2008-03-05
- Data Source
  KAKENHI-PROJECT-20246006
[Presentation] Degradation in Ga2O3-In2O3-ZnO Thin Film Transistors under Constant Voltage Stress2008
- Author(s)
  M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. Jung, J. Kwon, T. Nakanishi, M. Kimura
- Organizer
  AMFPD
- Place of Presentation
  Tokyo
- Year and Date
  2008-07-02
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] 極薄トンネル酸化膜上バイオナノドットからの電子放出の過渡解析2007
- Author(s)
  河北あゆみ、矢野裕司、浦岡行治、冬木隆
- Organizer
  第68 回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-18360173
[Presentation] Low Temperature poly-Si TFT Flash memory with Si nano crystal dot2007
- Author(s)
  K. Ichikawa, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  The proceeding of the 3rd International TFT Conference
- Place of Presentation
  Rome
- Year and Date
  2007-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] micro-PCD Measurement of Double-Layered poly-Si Thin Films Crystallization by Solid Green Lazer Annealing2007
- Author(s)
  Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki
- Organizer
  The proceeding of the 3rd International TFT Conference
- Place of Presentation
  Rome
- Year and Date
  2007-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Crystallization of Double-Layerd silicon Thin Film by Solid Green Laser Annealing for High Performance Thin Film Transistor2007
- Author(s)
  Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, A, Mimura
- Organizer
  AMFPD '07
- Place of Presentation
  Hyogo
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Low Temperature poly-Si TFT Flash memory with Si nano crystal dot2007
- Author(s)
  K.Ichikawa, H.Yano, T.Hatayama, Y.Uraoka(他1名、4番目)
- Organizer
  The proceeding of the 3rd International TFT Conference
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
- Author(s)
  T. Akagi, H. Yano, T. Hatayama, and T. Fuyuki
- Organizer
  The 9th European Conference on Silicon Carbide and Related Materials (ECSCRM2012)
- Place of Presentation
  Saint-Petersburg (Russia)
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] リンの局在化が4H-SiC MOSデバイスの電気特性に与える影響
- Author(s)
  赤木剛, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  平成24年秋季　第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] 界面にリンおよび窒素を導入した4H-SiC MOSFETのしきい値電圧不安定性の考察
- Author(s)
  金藤夏子, 矢野裕司, 大澤愛, 畑山智亮, 冬木隆
- Organizer
  電子情報通信学会　シリコン材料・デバイス研究会
- Place of Presentation
  奈良先端科学技術大学院大学（奈良県生駒市）
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] リンを界面に局在化させた4H-SiC MOSデバイスの電気特性と信頼性
- Author(s)
  赤木剛, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  SiC及び関連ワイドギャップ半導体研究会　第21回講演会
- Place of Presentation
  大阪市中央公会堂
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] SiO2/SiC界面へのリン導入による高品質界面の形成
- Author(s)
  矢野裕司
- Organizer
  ゲートスタック研究会　－材料・プロセス・評価の物理－　第18回研究会
- Place of Presentation
  ニューウェルシティー湯河原
- Invited
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] チャージポンピング法を用いた4H-SiC MOSFETにおける界面準位密度分布の評価
- Author(s)
  大澤愛, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  SiC及び関連ワイドギャップ半導体研究会　第21回講演会
- Place of Presentation
  大阪市中央公会堂
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] POCl3アニールによるSiC-MOSデバイスの高性能化
- Author(s)
  矢野裕司, 畑山智亮, 冬木隆
- Organizer
  電子情報通信学会　シリコン材料・デバイス研究会, 応用物理学会　シリコンテクノロジー分科会（共催）
- Place of Presentation
  機械振興会館（東京都港区）
- Invited
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing
- Author(s)
  H. Yano, T. Araoka, T. Hatayama, and T. Fuyuki
- Organizer
  The 9th European Conference on Silicon Carbide and Related Materials (ECSCRM2012)
- Place of Presentation
  Saint-Petersburg (Russia)
- Invited
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] Characterization of POCl3-Annealed 4H-SiC MOSFETs by Charge-Pumping Technique
- Author(s)
  A. Osawa, H. Yano, T. Hatayama, and T. Fuyuki
- Organizer
  The 9th European Conference on Silicon Carbide and Related Materials (ECSCRM2012)
- Place of Presentation
  Saint-Petersburg (Russia)
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] POCl3 Annealing as a New Method for Improving 4H-SiC MOS Device Performance
- Author(s)
  H. Yano, T. Hatayama, and T. Fuyuki
- Organizer
  PRiME 2012 (Pacific Rim Meeting on Electrochemical and Solid-State Science)
- Place of Presentation
  Honolulu (HI, USA)
- Invited
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] 界面に窒素およびリンを導入した4H-SiC MOSFETのしきい値電圧不安定性の考察
- Author(s)
  金藤夏子, 矢野裕司, 大澤愛, 畑山智亮, 冬木隆
- Organizer
  応用物理学会関西支部第2回講演会
- Place of Presentation
  奈良先端科学技術大学院大学（奈良県生駒市）
- Data Source
  KAKENHI-PROJECT-23760283
[Presentation] POCl3アニール処理をした4H-SiC MOSFETのチャージポンピング測定
- Author(s)
  大澤愛, 矢野裕司, 畑山智亮, 冬木隆
- Organizer
  平成24年秋季　第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23760283

1. HATAYAMA Tomoaki (90304162)

# of Collaborated Projects: 8 results

# of Collaborated Products: 55 results
2. YUKIHARU Uraoka (20314536)

# of Collaborated Projects: 5 results

# of Collaborated Products: 54 results
3. FUYUKI Takashi (10165459)

# of Collaborated Projects: 5 results

# of Collaborated Products: 26 results
4. 岩室憲幸 (50581203)

# of Collaborated Projects: 3 results

# of Collaborated Products: 50 results
5. IKEDA Atsuchi (90274505)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. YAMASHITA Ichiro

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. YAMAMOTO Shin-Ichi (70399260)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. KIMURA Mutsumi (60368032)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 岡本大 (50612181)

# of Collaborated Projects: 1 results

# of Collaborated Products: 38 results
10. 原田信介 (20392649)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

YANO Hiroshi 矢野 裕司

Yano Hiroshi 矢野 裕司

Research Projects

Research Products

Co-Researchers

Development of one-chip complementary inverters using SiC lateral super-junction power MOSFETsPrincipal Investigator

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Study on the effect of residual damage on reliabilities in short-circuited SiC MOSFETs

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Fundamental research and development of low-loss p-type SiC superjunction power MOSFETsPrincipal Investigator

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Elimination of interface defects at SiC/insulator by introducing phosphorus and other atoms toward innovation of power MOSFETsPrincipal Investigator

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Laser Crystallization of non two-dimensional Si substrates and their device application

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Nano structure fabrication by Self-assembling ability

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Random Tunneling Conduction in 2 Dimensional Bio-nano Dot Arrays and Application to Stochastic Resonant Tunneling Devices

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超低損失パワーデバイスを目指したSiCトレンチMOS構造の研究Principal Investigator

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Research of Bio-nano Display using Ferritin Protein

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新結晶面を有するSiCのMOS構造電子物性の制御Principal Investigator

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Two dimensional crystallization of ferritin protein for nano-scale process in semiconductor fabrication

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Self assembly of quantum dot and application to electron device using bio-nano process

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[Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基板・界面効果-(分担:第2編、第1章、第4節SiCデバイスプロセスにおける新規表面・界面改質技術)2013

Author(s)

Publisher

YANO Hiroshi 矢野裕司

Yano Hiroshi 矢野裕司

[Book] ポストシリコン半導体　－ナノ成膜ダイナミクスと基板・界面効果－2013

[Book] SiCパワーデバイスの開発と最新動向　－普及に向けたデバイスプロセスと実装技術－2012