Miyata Noriyuki 宮田典幸

… Alternative Names

MIYATA noriyuki 宮田典幸

MIYATA Noriyuki 宮田典幸

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Researcher Number	40358130
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究主幹
Affiliation (based on the past Project Information) *help	2019 – 2021: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究主幹 2017 – 2018: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究グループ長 2016: 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, グループリーダー 2012 – 2014: 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究グループ長 2012: 独立行政法人産業技術総合研究所, エレクトロニクス研究部門, 主任研究員 2011: National Institute of Advanced Industrial Science and Technology, 研究員 2007 – 2008: National Institute of Advanced Industrial Science and Technology, エレクトロニクス研究部門, 主任研究員
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Thin film/Surface and interfacial physical properties Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Principal Investigator X線励起光電子分光法 / 酸化膜 / 界面ダイポール / 不揮発性メモリ / 表面・界面 / 電子デバイス / 光電子分光 / 酸化物エレクトロニクス / 薄膜成長 / 抵抗変化メモリ … More / 機械学習 / データストレージ / データストレージ機械学習 / 表面・界面物性 / 電子デバイス・機器 / 電子・電気材料 / XPS / MOS / アモルファス / 不揮発メモリ / ニューロモルフィック / 第一原理計算 / X線光電子分光法 / 酸化物 / 絶縁体・半導体界面 / 界面物性 / 絶縁体・半導体界 / 電界効果型トランジスタ / 半導体工学 / 半導体界面 / 絶縁膜 / 高誘電率絶縁膜 … More Except Principal Investigator エピタキシャル / マイクロ・ナノデバイス / 半導体物性 / Ⅲ－Ⅴ族化合物半導体 / エピタキシャル成長 / MOSFET / 表面・界面物性 / Ⅲ-Ⅴ族化合物半導体 / 電子・電気材料 / 高誘電率絶縁膜 / マイクロディスク / 光電子融合デバイス / 導波路 / 微小共振器 / 歪み / シミュレーション / フォトニック結晶 / 量子ドット / ゲルマニウム Less

Two-terminal resistance change memory based on interface dipole modulationPrincipal Investigator
- Principal Investigator
  
  Miyata Noriyuki
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Multi-stack interface dipole modulation memory and analog operation dynamicsPrincipal Investigator
- Principal Investigator
  
  MIYATA noriyuki
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Valence-band engineering and interface-dipole control for realizing III-V pMOSFET
- Principal Investigator
  
  YASUDA Tetsuji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
金属酸化物の表面反応性を利用したグラフェンの創成Principal Investigator
- Principal Investigator
  
  宮田典幸
- Project Period (FY)
  2011
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies
- Principal Investigator
  
  SHIRAKI Yasuhiro
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo City University
An Experimental Study of Dipole-Layer Formation at Metal-Oxide/Semiconductor InterfacesPrincipal Investigator
- Principal Investigator
  
  MIYATA Noriyuki
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2022 2021 2020 2019 2018 2017 2016 2014 2013 2009 2008 2007 Other

All Journal Article Presentation Patent

[Journal Article] Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance-voltage and hard X-ray photoelectron spectroscopy studies2021
- Author(s)
  Noriyuki Miyata, Kyoko Sumita, Akira Yasui, Ryousuke Sano, Reito Wada, and Hiroshi Nohira
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 7 Pages: 071005-071005
- DOI
  10.35848/1882-0786/ac0b08
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19H02178
[Journal Article] Interface Dipole Modulation in HfO<inf>2</inf>/SiO<inf>2</inf> MOS Stack Structures2018
- Author(s)
  Miyata Noriyuki、Nara Jun、Yamasaki Takahiro、Sumita Kyoko、Sano Ryousuke、Nohira Hiroshi
- Journal Title
  
  2018 IEEE International Electron Devices Meeting (IEDM)
  
  Volume: 2018 Pages: 7.6.1-7.6.4
- DOI
  10.1109/iedm.2018.8614674
- Data Source
  KAKENHI-PROJECT-16H02335
[Journal Article] Low temperature preparation of HfO2/SiO2 stack structure for interface dipole modulation2018
- Author(s)
  Miyata Noriyuki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Issue: 25 Pages: 251601-251601
- DOI
  10.1063/1.5057398
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16H02335
[Journal Article] Electric-field-controlled interface dipole modulation for Si-based memory devices2018
- Author(s)
  Miyata Noriyuki
- Journal Title
  
  Scientific Reports
  
  Volume: 8 Issue: 1 Pages: 8486-8486
- DOI
  10.1038/s41598-018-26692-y
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16H02335
[Journal Article] Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors2014
- Author(s)
  A. Ohtake, T. Mano, N. Miyata, T. Mori, and T. Yasuda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 3
- DOI
  10.1063/1.4862542
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246058
[Journal Article] Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces2014
- Author(s)
  Noriyuki Miyata, Akihiro Ohtake, Masakazu Ichikawa, Takahiro Mori, and Tetsuji Yasuda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 23
- DOI
  10.1063/1.4882643
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246058
[Journal Article] Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole2009
- Author(s)
  宮田典幸, 阿部泰宏, 安田哲二
- Journal Title
  
  Applied Physics Express 2巻
- NAID
  210000014303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360149
[Journal Article] Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/ SiO2/Si Structures2009
- Author(s)
  阿部泰宏, 宮田典幸, 池永英司, 鈴木治彦, 北村幸司, 五十嵐智, 野平博司
- Journal Title
  
  Japanese Journal of Applied Physics 48巻
- NAID
  40016559583
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360149
[Journal Article] Conductance Spectroscopy Study on Interface Electronic States of HfO_2/Si Structures : Comparison with Interface Dipole2009
- Author(s)
  宮田典幸
- Journal Title
  
  Applied Physics Express 2
- NAID
  80020169638
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360149
[Journal Article] Comparison between Direct-Contact HfO2/Ge and HfO2/GeO2/Ge Struc- tures: Physical and Electrical Properties2008
- Author(s)
  阿部泰宏, 宮田典幸, 安田哲二
- Journal Title
  
  ECS Transactions 16巻
  
  Pages: 375-385
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360149
[Patent] シナプス素子2018
- Inventor(s)
  宮田
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-546444
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-16H02335
[Patent] 不揮発性記憶素子2018
- Inventor(s)
  宮田典幸
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2018-194268
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-16H02335
[Patent] 不揮発性記憶素子2016
- Inventor(s)
  宮田典幸
- Industrial Property Rights Holder
  宮田典幸
- Industrial Property Rights Type
  特許
- Filing Date
  2016
- Overseas
- Data Source
  KAKENHI-PROJECT-16H02335
[Patent] 表面の平坦性および結晶構造の完全性に優れたGaSb/InAs/S1（111）構造とその形成方法、並びにその構造を用いたMOSデバイスおよび赤外線検出デバイス2013
- Inventor(s)
  宮田典幸, 安田哲二, 大竹晃浩, 真野高明
- Industrial Property Rights Holder
  産業技術総合研究所, 国立研究開発法人物質・材料研究機構
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-195290
- Filing Date
  2013-09-20
- Acquisition Date
  2017-06-09
- Data Source
  KAKENHI-PROJECT-24246058
[Patent] 表面の平坦性および結晶構造の完全性に優れたGaSb/InAs/Si(111)構造とその形成方法、並びにその構造を用いたMOSデバイスおよび赤外検出デバイス2013
- Inventor(s)
  大竹晃浩、間野高明、宮田典幸、安田哲二
- Industrial Property Rights Holder
  大竹晃浩、間野高明、宮田典幸、安田哲二
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-195290
- Filing Date
  2013-09-20
- Data Source
  KAKENHI-PROJECT-24246058
[Patent] 不揮発性記憶素子2013
- Inventor(s)
  宮田典幸
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-192920
- Filing Date
  2013-09-18
- Acquisition Date
  2017-05-26
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] HfO2/TiO2/SiO2構造の電圧印加によるTiの化学結合状態変化の観測2022
- Author(s)
  桐原芳治, 辻口良太, 伊藤俊一, 保井晃, 宮田典幸, 野平博司
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第27回研究会)
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] Hard X-ray Photoemission Spectroscopy Study on Interface Dipole Modulation of HfO2/SiO2 MIM Device2021
- Author(s)
  Yoshiharu Kirihara, Ryota Tsujiguti, Reito Wada, Akira Yasui, Noriyuki Miyata, Hiroshi Nohir
- Organizer
  2021 International Conference on Solid State Devices and Materials (SSDM2021)
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] HAXPESによる界面ダイポール変調機構の解明2021
- Author(s)
  桐原芳治、和田励虎、辻口良太、保井晃、宮田典、野平博司
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] HAXPESによる界面ダイポール変調発生の確認2021
- Author(s)
  桐原芳治、辻口良太、保井晃、宮田典幸、野平博司
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] Resistive switching in two-terminal HfO2/SiO2 stack with interface dipole modulation2020
- Author(s)
  Noriyuki Miyata, Kyoko Sumita, Akira Yasui, Reito Wada, and Hiroshi Nohira
- Organizer
  2020 International Conference on Solid State Devices and Materials (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] バイアス印加硬X線光電子分光法によるHfO2/SiO2界面ダイポール変調の検出2020
- Author(s)
  野平博司、和田励虎、保井晃、宮田典幸
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第25回研究会)
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] STDP-like pulse response characteristics of interface dipole modulation FETs2020
- Author(s)
  Noriyuki Miyata
- Organizer
  2020 International Conference on Solid State Devices and Materials (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] HfO2/SiO2 MOS積層構造中の界面ダイポール変調動作2019
- Author(s)
  宮田、奈良、山崎、住田、佐野、野平
- Organizer
  応物・電通学会共催「ULSIデバイス・プロセス技術(IEDM2018特集)」
- Invited
- Data Source
  KAKENHI-PROJECT-16H02335
[Presentation] Effect of EOT Scaling on Switching Operation of HfO2/SiO2-Based Interface Dipole Modulation FETs2019
- Author(s)
  Noriyuki Miyata
- Organizer
  2019 International Workshop on ‘DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY’-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] バイアス印加硬X線光電子分光法によるHfO2/SiO2界面ダイポール変調の評価2019
- Author(s)
  野平博司、和田励虎、保井晃、宮田典幸
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] Interface dipole modulation in HfO2/SiO2 MOS stack and the analog dynamics2019
- Author(s)
  Noriyuki Miyata
- Organizer
  Collaborative Conference on Advanced Materials 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] Interface dipole modulation memory based on multi-stack HfO2/SiO2 structure2018
- Author(s)
  N. Miyata
- Organizer
  2018 International Conference on Small Science (ICSS 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02335
[Presentation] Interface dipole modulation in low-temperature-prepared HfO2/SiO2 structure2018
- Author(s)
  N. Miyata
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14), 26st International Colloquium on Scanning Probe Microscopy (ICSPM26)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02335
[Presentation] Gate-induced modulation of interface dipole in HfO2-based MOS structures2018
- Author(s)
  N. Miyata
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02335
[Presentation] 酸化物界面ダイポールを用いた新規メモリの提案2018
- Author(s)
  宮田典幸
- Organizer
  2018年春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02335
[Presentation] A New Memory Device based on Interface Dipole Modulation in HfO2-based Gate Stack Structure2017
- Author(s)
  N. Miyata
- Organizer
  Collaborative Conference on Materials Research (CCMR) 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02335
[Presentation] Electric Field Controlled Analog Memory based on Interface Dipole Modulation in HfO2/SiO2 Multi-Stacked Structures2016
- Author(s)
  Noriyuki Miyata
- Organizer
  The 6th Annual World Congress of Nano Science and Technology-2016 (Nano S&T-2016)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02335
[Presentation] Electrical Characteristics and Thermal Stability of HfO2/GaSb MOS Interfaces Formed on Clean GaSb(100)-c(2×6) Surfaces2013
- Author(s)
  N. Miyata, A. Ohtake, M. Ichikawa, T. Yasuda
- Organizer
  2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] GaSb(100)-c(2x6)表面に形成したHfO2 MOSキャパシタの電気特性2013
- Author(s)
  宮田典幸
- Organizer
  第60回応用物理学会春期学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] Chemical Bonding-Induced Dipole at the HfO_2/Si Interface2008
- Author(s)
  宮田典幸
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  つくば
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] Chemical Bonding-induced Dipole at the HfO2/Si Interface2008
- Author(s)
  宮田典幸阿部泰宏, 安田哲二
- Organizer
  International Conference on Solid State Devices and Materials(SSDM 2008 )
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] HfO2/SiO2/Si 構造で観察されるHf 光電子スペクトルのブロードニング2008
- Author(s)
  阿部泰宏, 宮田典幸, 池永英司, 鈴木治彦, 北村幸司, 五十嵐智, 野平博司
- Organizer
  第55 回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部(船橋)
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] HfO2/Ge 構造における界面GeO2の電気特性への影響2008
- Author(s)
  阿部泰宏, 宮田典幸, 安田哲二
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(愛知県)
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] Comparison between Direct-Contact HfO2/Ge and HfO2/GeO2/Ge Struc- tures: Physical and Electrical Properties2008
- Author(s)
  阿部泰宏, 宮田典幸, 安田哲二
- Organizer
  214th Meeting of ECS
- Place of Presentation
  Honolulu, Hawaii
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] 薄いHfO_2膜の熱的安定性:ボイド形成に関する考察2008
- Author(s)
  宮田典幸
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部天学(愛知県)
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] 薄いHfO2膜の熱的安定性: ボイド形成に関する考察2008
- Author(s)
  宮田典幸阿部泰宏, 安田哲二
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(愛知県)
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] Ge Diffusion through a Thin HfO2 Film during the Thermal Annealing2007
- Author(s)
  阿部泰宏, 宮田典幸, 安田哲二
- Organizer
  The 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  東京大学駒場キャンパス
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] 高真空EB蒸着法で作製したHfO2/Ge構造の熱的安定性2007
- Author(s)
  阿部泰宏, 宮田典幸, 安田哲二
- Organizer
  第68 回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(札幌)
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] Si(111)上でのGaSbヘテロエピタキシーとHfO2/GaSb MOSキャパシタの作製
- Author(s)
  大竹晃浩、間野高明、宮田典幸、森貴洋、安田哲二
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] Si(100)上のGaSbナノコンタクトへテロエピ成長とHfO2/GaSb MOS特性
- Author(s)
  宮田典幸、大竹晃浩、市川昌和、森貴洋、安田哲二
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246058

1. NOHIRA Hiroshi (30241110)

# of Collaborated Projects: 4 results

# of Collaborated Products: 12 results
2. NARA Jun (30354145)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
3. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. MARUIZUMI Takuya (00398893)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. SAWANO Kentarou (90409376)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. SETO Kenshu (10420241)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. XU Xuejun (80593334)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. XIA Jinsong (00434184)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. NAKAGAWA Kitokazu (40324181)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. MATSUI Toshiaki (20358922)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. USAMI Noritaka (20262107)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. YASUDA Tetsuji (90220152)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
13. MAEDA Tatsuro (40357984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. OHTAKE Akihiro (30267398)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
15. FUJISHIRO Hiroki (60339132)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. ICHIKAWA Masakazu (20343147)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
17. TANAKA Masatoshi (90130400)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. ABE Yasuhiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
19. YAMASAKI takahiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
20. SUMITA kyoko

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Miyata Noriyuki 宮田 典幸

MIYATA noriyuki 宮田 典幸

MIYATA Noriyuki 宮田 典幸

Research Projects

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Co-Researchers

Two-terminal resistance change memory based on interface dipole modulationPrincipal Investigator

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Multi-stack interface dipole modulation memory and analog operation dynamicsPrincipal Investigator

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Valence-band engineering and interface-dipole control for realizing III-V pMOSFET

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金属酸化物の表面反応性を利用したグラフェンの創成Principal Investigator

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Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies

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An Experimental Study of Dipole-Layer Formation at Metal-Oxide/Semiconductor InterfacesPrincipal Investigator

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[Journal Article] Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance-voltage and hard X-ray photoelectron spectroscopy studies2021

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[Journal Article] Interface Dipole Modulation in HfO<inf>2</inf>/SiO<inf>2</inf> MOS Stack Structures2018

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[Journal Article] Low temperature preparation of HfO2/SiO2 stack structure for interface dipole modulation2018

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[Journal Article] Electric-field-controlled interface dipole modulation for Si-based memory devices2018

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[Journal Article] Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors2014

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[Journal Article] Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces2014

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[Journal Article] Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole2009

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NAID

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[Journal Article] Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/ SiO2/Si Structures2009

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Miyata Noriyuki 宮田典幸

MIYATA noriyuki 宮田典幸

MIYATA Noriyuki 宮田典幸