matsuoka takashi 松岡隆志

… Alternative Names

MATSUOKA Takashi 松岡隆志

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Researcher Number	40393730
Other IDs
Affiliation (Current)	2025: 東北大学, 未来科学技術共同研究センター, 学術研究員
Affiliation (based on the past Project Information) *help	2012 – 2018: 東北大学, 金属材料研究所, 教授 2005 – 2006: 東北大学, 金属材料研究所, 教授
Review Section/Research Field	Principal Investigator Crystal engineering / Electronic materials/Electric materials Except Principal Investigator Electron device/Electronic equipment / Device related chemistry / Applied materials science/Crystal engineering
Keywords	Principal Investigator 有機金属気相成長 / 窒化物半導体 / ヘテロ構造 / N極性 / 有機金属気相成長法 / GaN / 高電子移動度トランジスタ / HEMT / 分極効果 / 極性 / MOVPE / InGaN / 発光ダイオード … More Except Principal Investigator … More トランジスタ / 窒化物半導体 / 半導体物性 / マイクロ・ナノデバイス / デバイス設計・製造プロセス / 窒素極性 / 電界効果トランジスタ / 結晶成長 / 先端機能デバイス / 電子デバイス・機器 / 窒素極性窒化物 / 高電子移動度トランジスタ / マイクロ波・ミリ波 / 太陽光発電 / 集光系 / 導波路結合 / 非対称導波路 / 離散的併進対称性 / 集光システム / 非対称導波路構造 / 導波路 / 太陽電池 / 半導体デバイス / SCAM基板 / パワーデバイス / long lived white LEDs / artificial control of defect genearation / generation of microscopic point defects / REDR effect / thermal and electronic defect reaction / degaradation of white LED / widedgap semiconductor optical device / ミクロ点欠陥制御による短波長光デバイスの長寿命化 / GaN系発光デバイスのミクロ点欠陥挙動 / ミクロ点欠陥による素子劣化 / ミクロ欠陥制御による素子寿命改善 / 電子的欠陥反応 / GaN系光デバイスのミクロ欠陥 / ZnSe白色LEDの劣化と制御 / ミクロ点欠陥増殖・移動 / ミクロ欠陥による素子劣化 / ワイドギャップ半導体光デバイス劣化機構 / 白色LEDの長寿命化技術 / 欠陥増殖の人工的制御 / ミクロ点欠陥増殖 / REDR効果 / 熱・電子的欠陥反応 / 白色LEDの劣化 / ワイドギャップ半導体光素子 Less

Crystal Growth of N-polar Nitride Semiconductor Heterostructures with Two-Dimensional Electron GasPrincipal Investigator
- Principal Investigator
  
  Matsuoka Takashi
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Tohoku University
Asymmetric-waveguide-coupled multi-striped orthogonal photo-photocarrier-propagation solar cell
- Principal Investigator
  
  Ishibashi Akira
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Device related chemistry
- Research Institution
  Hokkaido University
Study on nitrogen-polar InGaAs-channel high electron mobility transistors
- Principal Investigator
  
  Suemitsu Tetsuya
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Study on GaN-based vertical transistors using ScAlMgO4 substrates
- Principal Investigator
  
  Suemitsu Tetsuya
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Development of red-color emission based on nitride semiconductor for white lighingPrincipal Investigator
- Principal Investigator
  
  MATSUOKA Takashi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Study of degradation mechanism and its control on II-VI, III-V wide bandgap light emitting device
- Principal Investigator
  
  ANDO Koshi
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tottori University

All 2018 2017 2016 2015 2014 2013 2012 Other

All Journal Article Presentation Book

[Book] Epitaxial Growth of III-Nitride Compounds ~Computational Approach~2018
- Author(s)
  Takashi Matsuoka and Yoshihiro Kangawa
- Total Pages
  223
- Publisher
  Springer
- ISBN
  9783319766416
- Data Source
  KAKENHI-PROJECT-16H03857
[Journal Article] N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching2018
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 015503-015503
- DOI
  10.7567/apex.11.015503
- NAID
  210000136090
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074, KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-16H03857, KAKENHI-PROJECT-16H04341
[Journal Article] Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers2017
- Author(s)
  Ohnishi Kazuki、Kanoh Masaya、Tanikawa Tomoyuki、Kuboya Shigeyuki、Mukai Takashi、Matsuoka Takashi
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 10 Pages: 101001-101001
- DOI
  10.7567/apex.10.101001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13963
[Journal Article] New solar cell and clean unit system platform (CUSP) for earth and environmental science2017
- Author(s)
  A. Ishibashi,T. Matsuoka,R. Enomoto,M. Yasutake
- Journal Title
  
  IOP Conference Series: Earth and Environmental Science
  
  Volume: 93 Pages: 0120811-7
- DOI
  10.1088/1755-1315/93/1/012081
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04221, KAKENHI-PROJECT-16K12698
[Journal Article] Control of impurity concentration in N-polar (000-1) GaN grown by metalorganic vapor phase epitaxy2017
- Author(s)
  Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Matsuoka
- Journal Title
  
  Physics Status Solidi B
  
  Volume: 254 Issue: 8
- DOI
  10.1002/pssb.201600751
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-16H03857
[Journal Article] MOVPE growth of N-polar GaN/AlGaN/GaN heterostructure on small off-cut substrate for flat interface2016
- Author(s)
  K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka
- Journal Title
  
  2016 Compound Semiconductor Week, CSW 2016
  
  Volume: - Pages: 1-2
- DOI
  10.1109/iciprm.2016.7528837
- Data Source
  KAKENHI-PROJECT-16H03857
[Journal Article] Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (0001) GaN/sapphire2014
- Author(s)
  T. Tanikawa, K. Shojiki, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 5S1 Pages: 05FL05-05FL05
- DOI
  10.7567/jjap.53.05fl05
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth2014
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 8 Pages: 085501-085501
- DOI
  10.7567/jjap.53.085501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-24560362
[Journal Article] Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-Incorporation into InGaN Grown by MOVPE2014
- Author(s)
  J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka
- Journal Title
  
  Joumal of Nanoscience and Nanotechynology
  
  Volume: 14 Issue: 8 Pages: 6112-6115
- DOI
  10.1166/jnn.2014.8306
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Effect of c-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN2014
- Author(s)
  K. Shojiki and R. Katayama(他6名)
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53(5S1) Issue: 5S1 Pages: 05FL07-05FL07
- DOI
  10.7567/jjap.53.05fl07
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy2013
- Author(s)
  Yuantao Zhang, Takeshi Kimura, Kiattiwut Prasertusk, Takuya Iwabuchi, Suresh Kumar, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka
- Journal Title
  
  Thin Solid Films
  
  Volume: 536 Pages: 152-155
- DOI
  10.1016/j.tsf.2013.04.004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE2013
- Author(s)
  J. H. Choi and R. Katayama(他4名)
- Journal Title
  
  phys. stat. sol. (c)
  
  Volume: 10(3) Issue: 3 Pages: 417-420
- DOI
  10.1002/pssc.201200667
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Tilted domain and indium content of MOVPE-grown InGaN layer on m-plane GaN substrate2012
- Author(s)
  K. Shojiki and R. Katayama(他4名)
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 51 Issue: 4S Pages: 04DH01-04DH01
- DOI
  10.1143/jjap.51.04dh01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Phase diagram on phase purity of InN grown pressurized-reactor MOVPE2012
- Author(s)
  Takeshi Kimura, Kiattiwut Prasertsuk, Yuantao Zhang, Yuhuai Liu, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka
- Journal Title
  
  physica status solidi (c)
  
  Volume: 9(3-4) Issue: 3-4 Pages: 654-657
- DOI
  10.1002/pssc.201100390
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10F00059, KAKENHI-PROJECT-24560362
[Journal Article] Effect of Nitridation on Indium-composition of InGaN Films2012
- Author(s)
  J. H. Choi, S. Kumar, S. Y. Ji, K. Shojiki, T. Hanada, R. Katayama and T. Matsuoka
- Journal Title
  
  Key. Eng. Mater.
  
  Volume: 508 Pages: 193-198
- DOI
  10.4028/www.scientific.net/kem.508.193
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Relationship between residual carrier density and phase purity in InN grown by pressurized-reactor MOVPE2012
- Author(s)
  Kiattiwut Prasertsuk, Masaki Hirata, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Takuya Iwabuchi, Ryuji Katayama, Takashi Matsuoka
- Journal Title
  
  physica status solidi (c)
  
  Volume: 9(3-4) Issue: 3-4 Pages: 681-684
- DOI
  10.1002/pssc.201100404
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10F00059, KAKENHI-PROJECT-24560362
[Presentation] Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, and T. Matsuoka
- Organizer
  Compound Semiconductor Week (CSW) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] History and Future Perspectives of the Nitride Semiconductors2018
- Author(s)
  T. Matsuoka
- Organizer
  2nd Global Summit & Expo on Laser Optics & Photonics (Optics-18)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] History and Current Status of Research on Nitride Semiconductors2018
- Author(s)
  T. Matsuoka
- Organizer
  5th International Conference on Theoretical and Applied Physics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Reverse-bias-induced virtual gate phenomenon in N-polar GaN HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka
- Organizer
  MRS Fall Meeting 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] Reverse bias annealing effects in N-polar GaN/AlGaN/GaN MIS-HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka
- Organizer
  Compound Semiconductor Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] MOVPEによる窒素極性窒化物半導体成長2018
- Author(s)
  松岡隆志, 谷川智之, 窪谷茂幸
- Organizer
  第47回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] 窒素極性GaN MIS-HEMTにおける逆バイアスアニールの効果2018
- Author(s)
  末光哲也, K. Prasertsuk, 谷川智之, 木村健司, 窪谷茂幸, 松岡隆志
- Organizer
  第79回応用物理学会秋季学術講演会講演会
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Multi-striped Orthogonal Photon-Photocarrier Propagation Solar Cell (MOP3SC) in Waveguide-Coupled Scheme2018
- Author(s)
  A. Ishibashi, N. Sawamura, T. Matsuoka, H. Kobayashi and T. Kasai
- Organizer
  第28回日本MRS年次大会～循環型社会のためのマテリアルズイノベーション
- Invited
- Data Source
  KAKENHI-PROJECT-16H04221
[Presentation] Reverse-Bias-Induced Virtual Gate Phenomenon in N-Polar GaN HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, and T. Matsuoka
- Organizer
  2018 MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] 窒素極性GaN MIS-HEMT における逆バイアスアニールの効果2018
- Author(s)
  末光哲也, K. Prasertsuk, 谷川智之, 木村健司, 窪谷茂幸, 松岡隆志
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] MOVPE窒素極性成長による窒化物半導体の新展開2018
- Author(s)
  松岡隆志
- Organizer
  第79回応用物理学会秋季学術講演会講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Threshold voltage engineering of recessed MIS-gate N-polar GaN HEMTs2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] N-polar GaN MIS-HEMTs on Small Off-cut Sapphire Substrate for Flat Interface2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  ワイドギャップ半導体光・電子デバイス第162委員会平成29年度特別事業企画委員会100回記念特別公開シンポジウム　『ワイドギャップ半導体の基盤技術と将来展望』～パワー半導体を中心として～
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Reduced gate leakage current in N-polar GaN MIS-HEMTs2017
- Author(s)
  K. Prasertsuk, A. Miura, S. Tanaka, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimuram T. Suemitsu, and T. Matsuoka
- Organizer
  Compound Semiconductor Week 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] New solar-cell system and clean unit system platform (CUSP) for Electronics, Communications and Networks2017
- Author(s)
  A. Ishibashi,T. Matsuoka,R. Enomoto,M. Yasutake
- Organizer
  The 7th International Conference on Electronics, Communications and Networks
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04221
[Presentation] N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, T. Suemitsu, T. Matsuoka
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] N-polar GaN MIS-HEMTs with flat interface grown by optimized MOVPE2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] Threshold Voltage Engineering of Recessed MIS-Gate N-polar GaN HEMTs2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] N極性GaN HEMTsにおけるMIS構造導入によるリーク電流の低減2017
- Author(s)
  プラスラットスックキャッティウット、三浦輝紀、田中真二、谷川智之、木村健司、窪谷茂幸、末光哲也、松岡隆志
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Improvement of Emission Wavelength Homogeneity in N-polar (000-1) InGaN Grown by Metalorganic Vapor Phase Epitaxy2016
- Author(s)
  R. Nonoda, T. Tanikawa, K. Shojiki, S. Tanaka, S. Kuboya, R. Katayama, and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] N 極性 n 型 GaN 上 Ni ショットキーダイオード特性の蒸着法依存性2016
- Author(s)
  寺島勝哉, 野々田亮平, 正直花奈子, 谷川智之, 松岡隆志, 鈴木秀明, 岡本浩
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] MOVPE growth of N-polar GaN/AlGaN/GaN heterostructure on small off-cut substrate for flat interface2016
- Author(s)
  K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] Influence of Growth Conditions on Transport Properties in Undoped N-polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy2016
- Author(s)
  T. Tanikawa, K. Prasertsuk, A. Miura, S. Kuboya, R. Katayama, and T. Matsuoka
- Organizer
  The 4th International Conference on Light-Emitting Devices and Their Industrial Applications（LEDIA’16)
- Place of Presentation
  パシフィコ横浜，横浜
- Year and Date
  2016-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Control of Impurity Concentration of Undoped N-polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy2016
- Author(s)
  T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] MOVPE Growth of N-polar GaN/AlGaN/GaN Heterostructure on Small Off-cut Substrate for Flat Interface2016
- Author(s)
  K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, and T. Matsuoka
- Organizer
  Compound Semiconductor Week 2016
- Place of Presentation
  富山国際会議場, 富山
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] 窒化物半導体における窒素極性成長2016
- Author(s)
  松岡隆志
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Drain depletion length in InAlN/GaN MIS-HEMTs with slant field plates2015
- Author(s)
  N. Yasukawa, S. Hatakeyama, T. Yoshida, T. Kimura, T. Matsuoka, T. Otsuji, and T. Suemitsu
- Organizer
  42nd International Symposium on Compound Semiconductors
- Place of Presentation
  Santa Barbara, USA
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13963
[Presentation] Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire2014
- Author(s)
  N. Yoshinogawa, T. Iwabuchi, K. Shojiki, T. Kimura, T. Tanikawa, R. Katayama, and T. Matsuoka
- Organizer
  8th Intern. Symp. Medical, Bio- and Nano-Electronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Effect of indium surfactant on MOVPE growth of N-polar GaN2014
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Iwabuchi, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  8th Intern. Symp. Medical, Bio- and Nano-Electronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Recent Trends in Wide-Gap LEDs and LDs from Epitaxial Growth to Devices Structures2014
- Author(s)
  T. Matsuoka
- Organizer
  Thailand National Science and Technology Development Agency (NSTDA)
- Place of Presentation
  Bangok, Thailand
- Invited
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Effect of Reactor Pressure on Rate-determining Process in InN Growth2013
- Author(s)
  T. Kimura, K. Prasertsuk, Y. Zhang, T. Iwabuchi, Y. Liu, R. Katayama, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Effect of c-plane Sapphire Substrate Miscut-angle on Indium Content of MOVPE-grown N-polar InGaN2013
- Author(s)
  K. Shojiki, J. H. Choi, H. Shindo, T. Kimura, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Improvement of surface morphology in (000-1) GaN/Sapphire grown by MOVPE with indium surfactant2013
- Author(s)
  T. Tanikawa, T. Aisaka, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada, and T. Matsuoka
- Organizer
  Conference on LED and its industrial application '13 (LEDIA '13)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] In situ X-ray Diffraction during Reactive Deposition Epitaxy of FeSi2 on Si(001)2013
- Author(s)
  T. Hanada, H. Tajiri, O. Sakata, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Influence of Mg-Doping on the Surface Morphology of (000-1) GaN/Sapphire Grown by Metalorganic Vapor Phase Epitaxy2013
- Author(s)
  T. Tanikawa, T. Aisaka, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  10th International Conference on Nitride Semiconductors(ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] MOVPE 成長N 極性InGaN におけるIn 組成のc 面サファイア基板微傾斜角依存性2013
- Author(s)
  正直花奈子，崔正焄，進藤裕文，木村健司, 谷川智之, 花田貴，片山竜二，松岡隆志
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Improvement of Surface Morphology of N-polar GaN by Introducing Indium Surfactant during MOVPE Growth2013
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Investigation and Suppression of Metastable-phase Inclusion in MOVPE-grown -c-plane InGaN/GaN Multiple Quantum Wells2013
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi1, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  KINKEN-WAKATE 2013 10th Materials Science School for Young Scientists
- Place of Presentation
  Sendai Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Lattice-matching Substrates to InGaAlN and its Epitaxial Growth2013
- Author(s)
  T. Matsuoka, T. Tanikawa, T. Iwabuchi, and K. Shojiki
- Organizer
  2nd International Symposium on Single Crystals and Wafers
- Place of Presentation
  Wonju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Evaluation and Solution of Metastable-Phase Inclusion in MOVPE-grown -c-plane InGaN/GaN Multiple Quantum Wells2013
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
- Organizer
  10th International Conference on Nitride Semiconductors(ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Overview of Nitride Semiconductors2013
- Author(s)
  T. Matsuoka
- Organizer
  13 International Symposium on Optomechatronic Technologies
- Place of Presentation
  Jeju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Comparison of growth behavior in thick InGaN on (000-1) and (0001) GaN /Sapphire by metalorganic vapor phase epitaxy2013
- Author(s)
  T. Tanikawa, K. Shojiki, J.-H. Choi, R. Katayama, and T. Matsuoka
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Improvement of Surface Morphology in (000-1) GaN/Sapphire Grown by MOVPE with Indium Surfactant2013
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada, and T. Matsuoka
- Organizer
  Intern. Symp. Comp. Semcond. (ISCS2013)
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] (0001)および(000-1)面GaN上へMOVPE成長したInGaNの結晶品質比較2012
- Author(s)
  谷川智之, 片山竜二, 松岡隆志
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Comparison of crystalline quality in InGaN grown on (000-1) and (0001)GaN/Sapphire by metalorganic vapor phase epitaxy2012
- Author(s)
  T. Tanikawa, R. Katayama, and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2012
- Author(s)
  正直花奈子, 崔正焄, 進藤裕文, 木村健司, 谷川智之, 花田貴, 片山竜ニ,　松岡隆志
- Organizer
  第67回応用物理学会東北支部学術講演会
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] (0001)面、(000-1)面GaN上へMOVPE成長したInGaNの表面モフォロジーとIn取り込み2012
- Author(s)
  谷川智之, 正直花奈子, 崔正焄, 片山竜二, 松岡隆志
- Organizer
  第67回応用物理学会東北支部学術講演会
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] MOVPE成長(000-1) GaNのステップフロー成長の促進2012
- Author(s)
  逢坂崇, 正直花奈子, 岩渕拓也, 木村健司, 谷川智之, 花田貴, 片山竜二, 松岡隆志
- Organizer
  第67回応用物理学会東北支部学術講演会
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Study of In-composition of faceted InGaN on m-plane GaN substrate using high-resolution microbeam XRD2012
- Author(s)
  J-H Choi, K. Shojiki, T. Shimada, T. Tanikawa, T. Hanada, R. Katayama, Y. Imai, S. Kimura, and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-incorporation into InGaN Grown by MOVPE2012
- Author(s)
  J.H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  International Conference on Nano Science and Nano Technology
- Place of Presentation
  Gwangju, Korea
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Emission Wavelength Extension of Light Emitting Diode Using MOVPE-Grown N-Polar (000-1) InGaN
- Author(s)
  K. Shojiki, J.H. Choi, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Suppression of Metastable-Phase Inclusion in MOVPE-Grown N-Polar (000-1) InGaN/GaN Multiple Quantum Wells
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  Conference on LED and Its Industrial Application (LEDIA '14)
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Suppression of metastable-phase inclusion in MOVPE-grown N-polar (000-1) InGaN/GaN multiple quantum wells
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺（静岡県伊豆市）
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] サファイア基板上MOVPE成長N極性面(000-1)InGaNを用いた赤・緑・青色発光ダイオードの作製
- Author(s)
  正直花奈子，崔正焄，谷川智之，窪谷茂幸，花田貴，片山竜二，松岡隆志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy
- Author(s)
  T. Tanikawa, J. H. Choi, K. Shojiki, S. Kuboya, R. Katayama, and T. Matsuoka
- Organizer
  Conference on LED and Its Industrial Application (LEDIA '14)
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Crystallographic Polarity in Nitride Semicondcutors
- Author(s)
  T. Matsuoka, T. Tanikawa, T. Kimura, K. Shojiki, T. Iwabuchi, and R. Katayama
- Organizer
  2014 Intern.Symp. Crystal Growth and Crystal Technol.
- Place of Presentation
  Wonju, Korea
- Year and Date
  2014-11-12 – 2014-11-14
- Invited
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] MOVPE成長N極性(0001)InGaN多重量子井戸構造と発光ダイオードの構造・光学特性
- Author(s)
  正直花奈子，崔正焄，谷川智之，窪谷茂幸，花田貴，片山竜二，松岡隆志
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Control of GaN growth orientation by MOVPE
- Author(s)
  T. Tanikawa, K. Shojiki, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, T. Matsuoka, Y. Honda, H. Amano
- Organizer
  2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2)
- Place of Presentation
  東北大学片平キャンパス（宮城県仙台市）
- Year and Date
  2014-10-29 – 2014-10-31
- Invited
- Data Source
  KAKENHI-PROJECT-24560362
[Presentation] Overview on Crystallographic Polarization
- Author(s)
  T. Matsuoka, T. Tanikawa, T. Kimura, K. Shojiki, T. Iwabuchi, R. Katayama
- Organizer
  2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2)
- Place of Presentation
  東北大学片平キャンパス（宮城県仙台市）
- Year and Date
  2014-10-29 – 2014-10-31
- Invited
- Data Source
  KAKENHI-PROJECT-24560362

1. HANADA Takashi (80211481)

# of Collaborated Projects: 2 results

# of Collaborated Products: 20 results
2. Suemitsu Tetsuya (90447186)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
3. ANDO Koshi (60263480)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. ISHII Akira (70183001)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. ABE Tomoki (20294340)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. Ishibashi Akira (30360944)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
7. 谷川智之 (90633537)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
8. 片山竜二

# of Collaborated Projects: 0 results

# of Collaborated Products: 5 results
9. ZHANG Yuantao

# of Collaborated Projects: 0 results

# of Collaborated Products: 4 results

matsuoka takashi 松岡 隆志

MATSUOKA Takashi 松岡 隆志

Research Projects

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Crystal Growth of N-polar Nitride Semiconductor Heterostructures with Two-Dimensional Electron GasPrincipal Investigator

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Asymmetric-waveguide-coupled multi-striped orthogonal photo-photocarrier-propagation solar cell

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Study on nitrogen-polar InGaAs-channel high electron mobility transistors

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Study on GaN-based vertical transistors using ScAlMgO4 substrates

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Development of red-color emission based on nitride semiconductor for white lighingPrincipal Investigator

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Study of degradation mechanism and its control on II-VI, III-V wide bandgap light emitting device

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[Book] Epitaxial Growth of III-Nitride Compounds ~Computational Approach~2018

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[Journal Article] N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching2018

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[Journal Article] Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers2017

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[Journal Article] New solar cell and clean unit system platform (CUSP) for earth and environmental science2017

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[Journal Article] Control of impurity concentration in N-polar (000-1) GaN grown by metalorganic vapor phase epitaxy2017

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[Journal Article] MOVPE growth of N-polar GaN/AlGaN/GaN heterostructure on small off-cut substrate for flat interface2016

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[Journal Article] Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (0001) GaN/sapphire2014

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[Journal Article] Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth2014

Author(s)

matsuoka takashi 松岡隆志

MATSUOKA Takashi 松岡隆志