Tanaka Hajime 田中一

Researcher Number	40853346
Other IDs
Affiliation (Current)	2025: 関西学院大学, 工学部, 講師
Affiliation (based on the past Project Information) *help	2022 – 2024: 大阪大学, 大学院工学研究科, 助教 2020 – 2021: 大阪大学, 工学研究科, 助教 2019: 京都大学, 大学院横断教育プログラム推進センター先端光・電子デバイス創成学卓越大学院, 特定助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / 0302:Electrical and electronic engineering and related fields Except Principal Investigator Broad Section C
Keywords	Principal Investigator シミュレーション / 移動度 / 炭化ケイ素 / 量子輸送 / 原子論 / MOS反転層 / キャリア輸送 / ワイドギャップ半導体 / 衝突イオン化 / 高電界 … More / モンテカルロ / モンテカルロ法 / 散乱過程 / Hall移動度 / SiC / MOS界面 … More Except Principal Investigator MOS界面 / 高温動作デバイス / パワーデバイス / 絶縁破壊 / MOSFET / 炭化珪素 Less

SiC MOS反転層における電子輸送機構の原子論と量子論に基づく解明Principal Investigator
- Principal Investigator
  
  田中一
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Osaka University
Materials Science and Device Physics in SiC toward Robust Electronics
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  2021 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  Kyoto University
Theoretical Study on Impact Ionization Phenomena in Wide-bandgap SemiconductorsPrincipal Investigator
- Principal Investigator
  
  Tanaka Hajime
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Osaka University
Theoretical Study on Carrier Transport in SiC MOS InterfacesPrincipal Investigator
- Principal Investigator
  
  Tanaka Hajime
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Review Section
  
  0302:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
  Kyoto University

All 2024 2023 2022 2021 2020 2019

All Journal Article Presentation

[Journal Article] Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC2024
- Author(s)
  Tanaka Hajime, Kimoto Tsunenobu, Mori Nobuya
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 173 Pages: 108126-108126
- DOI
  10.1016/j.mssp.2024.108126
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14195, KAKENHI-PROJECT-21H05003
[Journal Article] Tunneling current through non-alloyed metal/heavily-doped SiC interfaces2024
- Author(s)
  Masahiro Hara, Takeaki Kitawaki, Hajime Tanaka, Mitsuaki Kaneko, and Tsunenobu Kimoto
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 171 Pages: 108023-108023
- DOI
  10.1016/j.mssp.2023.108023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1709, KAKENHI-PROJECT-21H05003
[Journal Article] Full-band Monte Carlo analysis of strain effects on carrier transport in GaN2024
- Author(s)
  Miyazaki Wataru, Tanaka Hajime, Mori Nobuya
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 02SP35-02SP35
- DOI
  10.35848/1347-4065/ad1005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14195
[Journal Article] Origin of hole mobility anisotropy in 4H-SiC2024
- Author(s)
  R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 135 Issue: 7 Pages: 075704-075704
- DOI
  10.1063/5.0186307
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1957, KAKENHI-PROJECT-21H05003
[Journal Article] Tight-binding analysis of the effect of strain on the band structure of GaN2023
- Author(s)
  W. Miyazaki, H. Tanaka, and N. Mori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SC Pages: SC1076-SC1076
- DOI
  10.35848/1347-4065/acb7fe
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14195
[Journal Article] Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H-SiC2023
- Author(s)
  R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
- Journal Title
  
  physica status solidi (b)
  
  Volume: 260 Issue: 10 Pages: 2300275-2300275
- DOI
  10.1002/pssb.202300275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1957, KAKENHI-PROJECT-21H05003
[Journal Article] Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased conditions based on the complex band structure2023
- Author(s)
  Murakami Yutoku、Nagamizo Sachika、Tanaka Hajime、Mori Nobuya
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SC Pages: SC1042-SC1042
- DOI
  10.35848/1347-4065/acaed2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H05003, KAKENHI-PROJECT-20H00250
[Journal Article] Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces2023
- Author(s)
  Takeaki Kitawaki, Masahiro Hara, Hajime Tanaka, Mitsuaki Kaneko, and Tsunenobu Kimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 3 Pages: 031005-031005
- DOI
  10.35848/1882-0786/acc30d
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1709, KAKENHI-PROJECT-21H05003
[Journal Article] Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates2022
- Author(s)
  Takahashi Katsuya、Tanaka Hajime、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 69 Issue: 4 Pages: 1989-1994
- DOI
  10.1109/ted.2022.3154673
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14209, KAKENHI-PROJECT-21H05003
[Journal Article] Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes2022
- Author(s)
  H. Tanaka, T. Kimoto, and N. Mori
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 22 Pages: 225701-225701
- DOI
  10.1063/5.0090308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14195, KAKENHI-PROJECT-21H05003
[Journal Article] Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes2022
- Author(s)
  Hara Masahiro、Tanaka Hajime、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 120 Issue: 17 Pages: 172103-172103
- DOI
  10.1063/5.0088681
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H05003, KAKENHI-PROJECT-22KJ1709
[Journal Article] Electron mobility along <0001> and <1-100> directions in 4H-SiC over a wide range of donor concentration and temperature2021
- Author(s)
  R. Ishikawa, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 14 Issue: 6 Pages: 061005-061005
- DOI
  10.35848/1882-0786/abfeb5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H05003
[Journal Article] Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors2020
- Author(s)
  Hajime Tanaka, Tsunenobu Kimoto, and Nobuya Mori
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 4 Pages: 041006-041006
- DOI
  10.35848/1882-0786/ab7f16
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K23514
[Presentation] Impacts of band structures and scattering processes on high-field carrier transport in wide bandgap semiconductors2023
- Author(s)
  H. Tanaka, T. Kimoto, N. Mori
- Organizer
  International Workshop on Computational Nanotechnology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14195
[Presentation] Full-Band Monte Carlo Analysis of Strain Effects on Carrier Transport in GaN2023
- Author(s)
  W. Miyazaki, H. Tanaka, N. Mori
- Organizer
  2023 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14195
[Presentation] Anisotropic Electron and Hole Mobilities in 4H-SiC Bulk Crystals2023
- Author(s)
  R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  65th Electronic Materials Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Impacts of Band Structures and Scattering Processes on High-field Carrier Transport in Wide Bandgap Semiconductors2023
- Author(s)
  H. Tanaka, T. Kimoto, and N. Mori
- Organizer
  Int. Workshop on Computational Nanotechnology 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] High-Field Phenomena in SiC Material and Devices2023
- Author(s)
  T. Kimoto, H. Niwa, X. Chi, M. Hara, R. Ishikawa, H. Tanaka, and M. Kaneko
- Organizer
  Symposium on Silicon Carbide as Quantum-Classical Platform 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Full-band Monte Carlo analysis of the effects of strain on the impact ionization of GaN2023
- Author(s)
  W. Miyazaki, H. Tanaka, N. Mori
- Organizer
  22nd International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14195
[Presentation] 4H-SiCの衝突イオン化係数の理論解析2023
- Author(s)
  田中一, 木本恒暢, 森伸也
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K14195
[Presentation] Monte Carlo Simulation of Electron Transport in SiC MOS Inversion Layers Considering Capture and Emission by Interface States2022
- Author(s)
  F. Tanaka, H. Tanaka, and N. Mori
- Organizer
  IEEE 2022 International Meeting for Future of Electron Devices, Kansai
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Anisotropy of hole mobility in 4H-SiC over wide ranges of acceptor concentration and temperature2022
- Author(s)
  R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Tight-Binding Analysis of the Effect of Strain on the Band Structure of GaN2022
- Author(s)
  W. Miyazaki, H. Tanaka, and N. Mori
- Organizer
  2022 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14195
[Presentation] Theoretical Analysis of Tunneling Current in 4H-SiC Schottky Barrier Diodes Under Reverse-biased Condition Based on Complex Band Structure2022
- Author(s)
  Y. Murakami, S. Nagamizo, H. Tanaka, and N. Mori
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Theoretical Analysis of Tunneling Effect in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure2022
- Author(s)
  Y. Murakami, S. Nagamizo, H. Tanaka, and N. Mori
- Organizer
  Int. Workshop on Innovative Nanoscale Devices and Systems 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] GaNのバンド構造に歪みが与える影響の強束縛近似法に基づく解析2022
- Author(s)
  宮崎航, 田中一, 森伸也
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K14195
[Presentation] Tight-binding and full-band Monte Carlo analysis of the strain effects in wurtzite GaN2022
- Author(s)
  W. Miyazaki, H. Tanaka, and N. Mori
- Organizer
  Workshop on Innovative Nanoscale Devices and Systems 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14195
[Presentation] Contribution of a split-off band to tunneling current in heavily-doped p-type SiC Schottky barrier diodes2022
- Author(s)
  T. Kitawaki, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Physics and Innovative Technologies in SiC Power Devices2021
- Author(s)
  T. Kimoto, M. Kaneko, K. Tachiki, K. Ito, R. Ishikawa, X. Chi, D. Stefanakis, T. Kobayashi, and H. Tanaka
- Organizer
  67th IEEE Int. Electron Devices Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] A New Horizon of SiC Technology Driven by Deeper Understanding of Physics2021
- Author(s)
  T. Kimoto, M. Kaneko, T. Kobayashi, H. Tanaka, K. Tachiki, A. Iijima, S. Yamashita, X. Chi, Y. Zhao, D. Stefanakis, and Y. Matsushita
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Monte Carlo simulation of two-dimensional carrier mobility in wide-gap semiconductor devices2021
- Author(s)
  N. Mori, H. Tanaka, T. Hoshino, G. Mil'nikov
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K23514
[Presentation] Electronic States in 4H-SiC MOS Inversion Layers Considering Crystal Structure Using Empirical Pseudopotential Method2021
- Author(s)
  S. Nagamizo, H. Tanaka, N. Mori
- Organizer
  International Workshop on Computational Nanotechnology 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K23514
[Presentation] Ideal Thermionic Field Emission and Field Emission Transport through Metal/Heavily-Doped SiC Schottky Barriers2021
- Author(s)
  M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Anisotropy of electron mobility in 4H-SiC over wide ranges of donor concentration and temperature2021
- Author(s)
  R. Ishikawa, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] 強束縛近似法による酸化ガリウムの電子状態の解析に関する研究2021
- Author(s)
  入田一輝，岡田丈，橋本風渡，田中一，森伸也
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K14195
[Presentation] 衝突イオン化係数のバンド構造に対する依存性の理論的解析2020
- Author(s)
  田中一, 木本恒暢, 森伸也
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K23514
[Presentation] 経験的擬ポテンシャル法を用いた4H-SiCにおける浮遊電子状態の計算2020
- Author(s)
  永溝幸周, 田中一, 森伸也
- Organizer
  先進パワー半導体分科会第7回講演会
- Data Source
  KAKENHI-PROJECT-19K23514
[Presentation] ワイドギャップ半導体の衝突イオン化係数にバンド構造が与える影響の解析2020
- Author(s)
  田中一，木本恒暢，森伸也
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K23514
[Presentation] 界面準位の影響に着目したSiC MOS反転層における電子輸送の理論的検討2020
- Author(s)
  田中一, 森伸也
- Organizer
  先進パワー半導体分科会第6回個別討論会
- Invited
- Data Source
  KAKENHI-PROJECT-19K23514
[Presentation] Theoretical Study of Band Structure Effects on Impact Ionization Coefficients in Wide-bandgap Semiconductors2019
- Author(s)
  Hajime Tanaka, Nobuya Mori, and Tsunenobu Kimoto
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K23514
[Presentation] 衝突イオン化係数にバンド構造が与える影響の理論解析2019
- Author(s)
  田中一，木本恒暢，森伸也
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-19K23514
[Presentation] Monte Carlo Simulation of Hall Mobility in 4H-SiC MOS Inversion Layers2019
- Author(s)
  Hajime Tanaka and Nobuya Mori
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K23514

1. 木本恒暢 (80225078)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
2. 金子光顕 (60842896)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results

Tanaka Hajime 田中 一

Research Projects

Research Products

Co-Researchers

SiC MOS反転層における電子輸送機構の原子論と量子論に基づく解明Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Materials Science and Device Physics in SiC toward Robust Electronics

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Theoretical Study on Impact Ionization Phenomena in Wide-bandgap SemiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Theoretical Study on Carrier Transport in SiC MOS InterfacesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Tunneling current through non-alloyed metal/heavily-doped SiC interfaces2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Full-band Monte Carlo analysis of strain effects on carrier transport in GaN2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Origin of hole mobility anisotropy in 4H-SiC2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Tight-binding analysis of the effect of strain on the band structure of GaN2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H-SiC2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased conditions based on the complex band structure2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes2022

Author(s)

Tanaka Hajime 田中一