Kimoto Tsunenobu 木本恒暢

… Alternative Names

Researcher Number	80225078
Other IDs
Affiliation (Current)	2020: 京都大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help	2018 – 2020: 京都大学, 工学研究科, 教授 2012 – 2013: 京都大学, 工学(系)研究科(研究院), 教授 2006 – 2011: 京都大学, 工学研究科, 教授 2008: Kyoto University, 大学院・工学研究科, 教授 2004 – 2005: 京都大学, 工学研究科, 助教授 … More
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Applied optics/Quantum optical engineering / Applied materials science/Crystal engineering / Electronic materials/Electric materials / Medium-sized Section 21:Electrical and electronic engineering and related fields Except Principal Investigator 電子材料工学 / Electronic materials/Electric materials / エネルギー学一般・原子力学 / 電力工学・電気機器工学 / Applied materials science/Crystal engineering / Applied physics, general / Physics
Keywords	Principal Investigator パワーデバイス / MOSFET / シリコンカーバイド / 炭化珪素 / シリコンカーバイド(SiC) / イオン注入 / 結晶欠陥 / キャリア寿命 / 深い準位 / 拡張欠陥 … More Except Principal Investigator シリコンカーバイド / パワーデバイス / 表面超構造 / イオン注入 / MOSFET / 広禁制帯幅半導体 / ガリウムリン / silicon carbide / power device / 熱酸化 / pn接合ダイオード / 太陽電池 / シリコン / 格子整合 / シリコンカ-バイド / 原子層エピタキシ- / 原子層エピタキシー / メゾスコピック構造 / 反射高速電子線回折法 / 表面反応 / 分子線エピタキシ- / 価電子制御 / シリコンカーバイド(SiC) / Silicon Carbide / Thermal Oxidation / pn Junction Diode / Schottky Barrier Diode / エピタキシャル成長 / フォトルミネセンス / 深い準位 / 不純物ド-ピング / photoluminescence / ion implantation / 表面超格子 / 反射電子回線折法 / 局在中心 / ステップ制御エピタキシ- / 青色発光ダイオード / 有機金属分子線成長法 / 窒化ガリウム / 超高真空 / 可視発光材料 / 有機アミン / 高速反射電子線回析 / ガスソース分子線成長法 / しきい値イオン化質量分析法 / レーザ誘起反応 / 原子層エピタキシャル成長 / その場観測 / 有機金属分子線エピタキシャル成長法 / 二次イオン質量分析法 / ラジカル / 有機金属 / 光励起 / 反射高速電子線回折 / 原子層制御成長 / 高効率太陽電池 / 有機金属気相成長法 / タンデム型太陽電池 / ヘテロエピタキシ- / メチルラジカル / ガスソース分子線 / ヘテロエピタキシャル成長 / SiC / EMC / 回路実装 / 集積化 / パワ-デバイス / 絶縁破壊電界 / 低温成長 / ポリタイプ制御 / ステップフロ-成長 / 低温結晶成長 / breakdown field / low-temperature growth / polytype control / step-flow growth / 気相エピタキシ- / 成長機構 / Schottky障壁ダイオード / 結晶成長 / 不純物ドーピング / Power Device / Vapor Phase Epitaxy / Growth Mechanism / 結晶評価 / epitaxial growth / deep level / 有機金属分子線エピタキシ- / 光励起反応 / 光励起原子層エピタキシ- / その場観察 / 反射高速電子回折法 / 飽和吸着 / 光励起プロセス / 質量分析 / 反射電子線回析 / III-V族半導体 / MOMBE / Photo-chemical reaction / Surface reaction / Photo-induced ALE / In-situ observation / RHEED / GaP / Saturated adsorption / Schottkyダイオード / Power Device- / Ion Implantation / 極微領域ホトルミネセンス像 / 極低温測定 / 極微領域電子構造 / レーザー顕微鏡 / 半導体極微構造 / ピエゾアクチュエータ / 半導体特性マッピング / high spatial resolution / low temperature / confocal microscope / electronic structure / piezo actuator / photoluminescence image / nano structure / pn diode / thermal oxidation Less

半絶縁性SiCの物性・欠陥解明とイオン注入による相補型ロバストJFETの作製Principal InvestigatorOngoing
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Kyoto University
Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking VoltagePrincipal Investigator
- Principal Investigator
  
  KIMOTO Tsunenobu
- Project Period (FY)
  2009 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
超高耐圧ロバスト素子を目指した炭化珪素半導体の欠陥制御に関する研究Principal Investigator
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
Study on SiC Super-Junction Power MOSFETs Utilizing Ion Implantation and Embedded Epitaxial GrowthPrincipal Investigator
- Principal Investigator
  
  TSUNENOBU Kimoto
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
Design and Integration of Power Line Circuit for SiC Power Devices Considering EMC
- Principal Investigator
  
  HIKIHARA Takashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電力工学・電気機器工学
- Research Institution
  Kyoto University
Fundamental Study on Low-loss SiC Power Devices Using Multi pn JunctionsPrincipal Investigator
- Principal Investigator
  
  KIMOTO Tsunenobu
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYOTO UNIVERSITY
High-Voltage, High-Efficiency, High-Speed Power MOSFET Using Wide Bandgap Semiconductor SiCPrincipal Investigator
- Principal Investigator
  
  KIMOTO Tsunenobu
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYOTO UNIVERSITY
Control of Electronic Properties of Wide Bandgap Semiconductor and Application to Energy Electronics
- Principal Investigator
  
  MATSUNAMI Hiroyuki
- Project Period (FY)
  1997 – 2000
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Physics
- Research Institution
  KYOTO UNIVERSITY
Topographic analyzer for electronic structures of semiconductors
- Principal Investigator
  
  SARAIE Junji, 吉本昌広
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied physics, general
- Research Institution
  KYOTO INSTITUTE OF TECHNOLOGY
  Kyoto University
表面超構造制御原子層エピタキシ-のためのフリーラジカルの作製
- Principal Investigator
  
  松波弘之
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
表面超構造制御原子層エピタキシ-のためのフリーラジカルの作製
- Principal Investigator
  
  松波弘之
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
レーザ励起による表面反応ダイナミクスの究明とエピタキシャル成長の原子層レベル制御
- Principal Investigator
  
  冬木隆
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
広禁制帯幅半導体との複合による極限高効率シリコン太陽電池の開発
- Principal Investigator
  
  冬木隆
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  エネルギー学一般・原子力学
- Research Institution
  Kyoto University
ワイドギャッブ半導体SiC/GaNヘテロ接合の作製と物性評価Principal Investigator
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
Electronic Behavior ofWide-Gap Semiconductor and Devices
- Principal Investigator
  
  MATSUNAMI Hiroyuki
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Institution
  KYOTO UNIVERSITY
Microscopic analysis on surface reaction induced by laser irradiation and its application to atomic layr epitaxy
- Principal Investigator
  
  MATSUNAMI Hiroyuki
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  KYOTO UNIVERSITY
Application of Wide Bandgap Semiconductor SiC for Power Devices
- Principal Investigator
  
  MATSUNAMI Hiroyuki
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYOTO UNIVERSITY
表面超構造制御原子層エピタキシーのためのフリーラジカルの作製
- Principal Investigator
  
  松波弘之
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
レーザ誘起原子層エピタキシーによる純正III-V族半導体結晶の製作
- Principal Investigator
  
  吉本昌広
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
ワイドギャップ半導体SiCへの新しい青色発光中心の添加と発光過程の解明Principal Investigator
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Kyoto University
格子整合系複合材料を用いたシリコン太陽電池の極限高効率化
- Principal Investigator
  
  冬木隆
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
表面制御原子層エピタキシー法によるSiC純正結晶の製作と光物性制御
- Principal Investigator
  
  冬木隆
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
有機金属分子線成長法による光素子用ワイドギヤップ材料窒化ガリウムの純正結晶の製作
- Principal Investigator
  
  吉本昌広
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Kyoto University
Crystal Growth of Widegap Semiconductor SiC with High-Purity and Application to Power Devices
- Principal Investigator
  
  MATSUNAMI Hiroyuki
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  KYOTO UNIVERSITY
格子整合系複合材料を用いたシリコン太陽電池の極限高効率化
- Principal Investigator
  
  FUYUKI Takashi
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
表面制御原子層エピタキシ-法によるSiC純正結晶の製作と光物性制御
- Principal Investigator
  
  冬木隆
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
Crystal Growth of High-Quality SiC by Step-Controlled Epitaxy and its Application for Power Devices
- Principal Investigator
  
  MATSUNAMI Hiroyuki
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Kyoto University

All 2019 2018 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004

All Journal Article Presentation Book Patent

[Book] ワイドギャップ半導体　あけぼのから最前線へ2013
- Author(s)
  木本恒暢
- Publisher
  培風館
- Data Source
  KAKENHI-PROJECT-21226008
[Book] Silicon Carbide Epitaxy 42012
- Author(s)
  T. Kimoto, G. Feng, K. Danno, T. Hiyoshi and J. Suda
- Publisher
  Research Signpost,
- Data Source
  KAKENHI-PROJECT-21226008
[Book] "4H-SiC epitaxial growth and defect characterization", Silicon Carbide Epitaxy 42012
- Author(s)
  T. Kimoto, G. Feng, K. Danno, T. Hiyoshi and J. Suda
- Publisher
  Publisher Research Signpost
- Data Source
  KAKENHI-PROJECT-21226008
[Book] SiCパワーデバイス最新技術2010
- Author(s)
  木本恒暢
- Publisher
  サイエンス&テクノロジー
- Data Source
  KAKENHI-PROJECT-21226008
[Book] Silicon Carbide and Related Materials 20072009
- Author(s)
  A. Suzuki, H. Okumura, T. Kimoto, T. Funaki, K. Fukuda, and S. Nishizawa
- Publisher
  Trans Tech Publications
- Data Source
  KAKENHI-PROJECT-18206032
[Book] Wide Bandgap Semiconductors2007
- Author(s)
  K. Takahashi, A. Yoshikawa, A. Sandhu, T. Kimoto, 他
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-18206032
[Book] ワイドギャップ半導体光・電子デバイス2006
- Author(s)
  高橋清、長谷川文夫、吉川明彦、木本恒暢、他
- Publisher
  森北出版株式会社
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing2019
- Author(s)
  T. Kobayashi, J. Suda, and T. Kimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 3 Pages: 031001-031001
- DOI
  10.7567/1882-0786/ab032b
- NAID
  210000135625
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03779
[Journal Article] Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices2019
- Author(s)
  T. Kimoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: 1 Pages: 018002-018002
- DOI
  10.7567/1347-4065/aae896
- NAID
  120006550407
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H03779
[Journal Article] Determination of Surface Recombination Velocity From Current-Voltage Characteristics in SiC p-n Diodes2018
- Author(s)
  S. Asada, J. Suda and T. Kimoto
- Journal Title
  
  IEEE TRANSACTIONS ON ELECTRON DEVICES
  
  Volume: 65 Pages: 4786-4791
- DOI
  10.1109/ted.2018.2867545
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03779, KAKENHI-PROJECT-16J08202
[Journal Article] Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations2018
- Author(s)
  S. Asada, J. Suda and T. Kimoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 8 Pages: 088002-088002
- DOI
  10.7567/jjap.57.088002
- NAID
  210000149429
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H03779, KAKENHI-PROJECT-16J08202
[Journal Article] High-temperature operation of n- and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating SiC substrate2018
- Author(s)
  M. Kaneko and T. Kimoto
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 39 Pages: 723-726
- DOI
  10.1109/led.2018.2822261
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03779
[Journal Article] 高耐圧SiCパワーデバイスの進展と課題2014
- Author(s)
  木本恒暢
- Journal Title
  
  固体物理
  
  Volume: 49 Pages: 35-43
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime2013
- Author(s)
  N. Kaji, H. Niwa, J. Suda, and T. Kimoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 7R Pages: 070204-070204
- DOI
  10.7567/jjap.52.070204
- NAID
  210000142425
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation2013
- Author(s)
  Takafumi Okuda, Tsunenobu Kimoto, and Jun Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 12 Pages: 121301-121301
- DOI
  10.7567/apex.6.121301
- NAID
  40019923235
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J06044, KAKENHI-PROJECT-21226008
[Journal Article] Deep levels generated by thermal oxidation in p-type 4H-SiC2013
- Author(s)
  Koutarou Kawahara, et al.
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113
- DOI
  10.1063/1.4776240
- NAID
  120005439688
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J05621, KAKENHI-PROJECT-21226008
[Journal Article] Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance2013
- Author(s)
  Koutarou Kawahara, et al.
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 102
- DOI
  10.1063/1.4796141
- NAID
  120005439685
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J05621, KAKENHI-PROJECT-21226008
[Journal Article] Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation2013
- Author(s)
  T. Okuda, T. Kimoto, and J. Suda
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 6
- NAID
  40019923235
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC2013
- Author(s)
  K. Kawahara, J. Suda, and T. Kimoto,
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 5 Pages: 051301-051301
- DOI
  10.7567/apex.6.051301
- NAID
  10031174299
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension2012
- Author(s)
  H. Niwa, J. Suda, and T. Kimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 6 Pages: 064001-064001
- DOI
  10.1143/apex.5.064001
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes2012
- Author(s)
  S. Ichikawa, K. Kawahara, J. Suda, and T. Kimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 10 Pages: 101301-101301
- DOI
  10.1143/apex.5.101301
- NAID
  10031117540
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Breakdown characteristics of 15-kV-class 4H-SiC PiN diodes with various junction termination structures2012
- Author(s)
  H. Niwa, G. Feng, J. Suda, and T. Kimoto
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 59 Pages: 2748-2752
- DOI
  10.1109/ted.2012.2210044
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Analytical model for reduction of deep levels in SiC by thermal oxidation2012
- Author(s)
  K. Kawahara, J. Suda, and T. Kimoto
- Journal Title
  
  J. Appl. Phys
  
  Volume: 111
- DOI
  10.1063/1.3692766
- NAID
  120004057133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Space-modulated junction termination extension for ultrahigh-voltage p-i-n diodes in 4H-SiC2012
- Author(s)
  G. Feng, J. Suda, and T. Kimoto
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 59 Pages: 414-418
- DOI
  10.1109/ted.2011.2175486
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] 21-kV SiC BJTs with space-modulated junction termination extension2012
- Author(s)
  H. Miyake, T. Okuda, H. Niwa, T. Kimoto, and J. Suda
- Journal Title
  
  IEEE Electron Device Lett.
  
  Volume: 33 Pages: 1598-1600
- DOI
  10.1109/led.2012.2215004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] 21-kV SiC BJTs with space-modulated junction termination extension2012
- Author(s)
  H. Miyake, T. Okuda, H. Niwa, T. Kimoto, and J. Suda
- Journal Title
  
  IEEE Electron Device Lett
  
  Volume: 33 Pages: 1598-1600
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Carrier recombination in n-type 4H-SiC epilayers with long carrier lifetimes2012
- Author(s)
  S. Ichikawa, K. Kawahara, J. Suda, and T. Kimoto
- Journal Title
  
  Appl. Phys. Exp
  
  Volume: 5
- NAID
  10031117540
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence manning2011
- Author(s)
  G. Feng, J. Suda, and T. Kimoto
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 110
- DOI
  10.1063/1.3622336
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] 高効率電力変換用SiCパワーデバイス2011
- Author(s)
  木本恒暢
- Journal Title
  
  応用物理
  
  Volume: 80 Pages: 673-678
- NAID
  10029354680
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-tyne 4H-Sic epilavers2011
- Author(s)
  T.Hayashi, T.Asano, J.Suda, T.Kimoto
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 109
- DOI
  10.1063/1.3583657
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Sources of epitaxial growth-induced stacking faults in 4H-SiC2010
- Author(s)
  G.Feng, J.Suda, T.Kimoto
- Journal Title
  
  Journal of Electronic Material
  
  Volume: 39 Pages: 1166-1169
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC2010
- Author(s)
  K.Kawahara, J.Suda, G.Pensl, T.Kimoto
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- NAID
  120003386608
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers2010
- Author(s)
  T.Kimoto, T.Hiyoshi, T.Hayashi, J.Suda
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- NAID
  120002661513
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Measuring terminal capacitance and its voltagedependency for high-voltagepower devices2009
- Author(s)
  T. Funaki, N. Phankong, T. Kimoto, T. Hikihara
- Journal Title
  
  IEEE Transaction on Power Electronics
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Characterization of major in-grown stacking faults in 4H-SiC epilayers2009
- Author(s)
  G.Feng, J.Suda, T.Kimoto
- Journal Title
  
  Physica B : Condensed Matter 23-24
  
  Pages: 4745-4748
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation2009
- Author(s)
  T.Hiyoshi, T.Kimoto
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025085589
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Measuring terminal capacitance and its voltage dependency for high-voltagepower devices2009
- Author(s)
  T.Funaki, N.Phankong, T.Kimoto, and T.Hikihara
- Journal Title
  
  IEEE Transaction on Power Electronics (to appear)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC2009
- Author(s)
  K.Kawahara, G.Alfieri, T.Kimoto
- Journal Title
  
  Journal of Applied Physics 106
- NAID
  120002086109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation2009
- Author(s)
  T. Hiyoshi, and T. Kimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 2 Pages: 041101-041101
- DOI
  10.1143/apex.2.041101
- NAID
  10025085589
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes2008
- Author(s)
  T. Hiyoshi, T. Hori, J. Suda, and T. Kimoto
- Journal Title
  
  IEEE Transaction on electron Devices 55
  
  Pages: 1841-1846
- NAID
  120001462508
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation2008
- Author(s)
  T. Kimoto, K. Danno, and J. Suda
- Journal Title
  
  Phys. Stat. Sol.(b) 245
  
  Pages: 1327-1336
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model2008
- Author(s)
  T.Funaki, T.Kimoto, and T.Hikihara
- Journal Title
  
  IEEE Transaction on Power Electronics Vol.23, No.5
  
  Pages: 2602-2611
- NAID
  120001462514
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] 4H-SiC MIS Capacitors and MISFETs with deposited SiNx/SiO2 stack-gate structures2008
- Author(s)
  M. Noborio, J. Suda, and T. Kimoto
- Journal Title
  
  IEEE Transaction on electron Devices 55
  
  Pages: 2054-2060
- NAID
  120001462509
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses2008
- Author(s)
  M. Noborio, J. Suda,, T. Kimoto
- Journal Title
  
  Applied Physics Express No.1
  
  Pages: 101403-101403
- NAID
  10025082727
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Improved performance of 4H-SiC double reduced Surface field metal-oxide- semiconductor field-effect transistors by increasing RESURF doses2008
- Author(s)
  M. Noborio, J. Suda, and T. Kimoto
- Journal Title
  
  Appl. Phys. Express 1
  
  Pages: 1014031-3
- NAID
  10025082727
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Evaluation of High Frequency Switching Capability of Sic Schottky Barrier Diode, Based on Junction Capacitance Model2008
- Author(s)
  T. Funaki, T. Kimoto, T. Hikihara
- Journal Title
  
  IEEE Transaction on Power Electronics Vol. 23, No. 5
  
  Pages: 2602-2611
- NAID
  120001462514
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Direct determination of burgers vector sense and magnitude of elementary dislocations by synchrotron white x-ray topography2008
- Author(s)
  D. Nakamura, S. Yamaguchi, Y. Hirose, T. Tani, K. Takatori, K. Kajiwara, and T. Kimoto
- Journal Title
  
  J. Appl. Phys 103
  
  Pages: 0135101-7
- NAID
  120001462525
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes2008
- Author(s)
  T. Hiyoshi, T. Hori, J Suda, T. Kimoto
- Journal Title
  
  IEEE Transaction on electron Devices. 55
  
  Pages: 1841-1846
- NAID
  120001462508
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] 4H-SiC MIS Capacitors and MISFETs with deposited SiNx/Si02 stack-gate structures2008
- Author(s)
  M. Noborio, J. Suda, T. Kimoto
- Journal Title
  
  IEEE Transaction on electron Devices. 55
  
  Pages: 2054-2060
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses2008
- Author(s)
  Masato Noborio, Jun Suda, Tsunenobu Kimoto
- Journal Title
  
  Applied Physics Express 1
  
  Pages: 101403-101403
- NAID
  10025082727
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Hydrogen implantation and annealing-induced exfoliation process in SiC wafers with various crystal orientations2008
- Author(s)
  K. Senga, T. Kimoto, and J. Suda
- Journal Title
  
  Jpn. J. Appl. Phys 47
  
  Pages: 5352-5354
- NAID
  210000065207
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Investigation of carrier lifetime in 4H- SiC epilayers and lifetime control by electron irradiation2007
- Author(s)
  K. Danno, D. Nakamura and T. Kimoto
- Journal Title
  
  Appl. Phys. Lett. 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density2007
- Author(s)
  D. Nakamura, S. Yamaguchi, I. Gunjishima, Y. Hirose and T. Kimoto
- Journal Title
  
  J. Crystal Growth 304
  
  Pages: 57-63
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Power conversion with SiC devices at extremely high ambient temperatures2007
- Author(s)
  T. Funaki, J. C. Balda, J. Junghans, A. S . Kashyap, H. A. Mantooth, F. Barlow, T. Kimoto and T. Hikihara
- Journal Title
  
  IEEE Trans. Power Electronics 22
  
  Pages: 1321-1329
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation2007
- Author(s)
  K. Danno, D. Nakamura and T. Kimoto
- Journal Title
  
  Appl. Phys. Lett 90
  
  Pages: 2021091-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET2007
- Author(s)
  T.Funaki, T.Kimoto, T. Hikihara
- Journal Title
  
  IEICE Electron. Express Vol.4 No.16
  
  Pages: 517-523
- NAID
  130000088441
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers2007
- Author(s)
  K. Danno and T. Kimoto
- Journal Title
  
  J. Appl. Phys 101
  
  Pages: 1037041-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC2007
- Author(s)
  G. Alfieri and T. Kimoto
- Journal Title
  
  J. Appl. Phys 107
  
  Pages: 1037161-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] 4H-SiC lateral double RESURF MOSFETs with low on resistance2007
- Author(s)
  M. Noborio, J. Suda and T. Kimoto
- Journal Title
  
  IEEE Trans. Electron Devices 54
  
  Pages: 1216-1223
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET2007
- Author(s)
  T. Funaki, T. Kimoto and T. Hikihara
- Journal Title
  
  IEICE Electron. Express Vol.4No.16
  
  Pages: 517-523
- NAID
  130000088441
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] 4H-SiC lateral double RESURF MOSFETs with low on-resistance2007
- Author(s)
  M. Noborio, J. Suda and T. Kimoto
- Journal Title
  
  IEEE Trans. Electron Devices 54
  
  Pages: 1216-1223
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] 4H-SiC lateral double RESURF MOSFETs with low on resistance2007
- Author(s)
  M. Noborio, J. Suda, T. Kimoto
- Journal Title
  
  IEEE Trans. Electron Devices Vol.54
  
  Pages: 1216-1223
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Dose designing and fabrication of 4H-SiC double RESURF MOSFETs2006
- Author(s)
  T.Kimoto 他
- Journal Title
  
  Proc. 18th Int. Symp. On Power Semiconductor Devices
  
  Pages: 273-276
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Reduction of on-resistance in 4H-SiC multi-RESURF MOSFETs2006
- Author(s)
  M. Noborio, J. Suda, and T. Kimoto
- Journal Title
  
  Materials Science Forum Vol.527-529
  
  Pages: 1305-1308
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics2006
- Author(s)
  T.Kimoto 他
- Journal Title
  
  Microelectron. Eng. 83
  
  Pages: 27-29
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Reduction of on-resistance in 4H-SiC multi-RESURF MOSFETs2006
- Author(s)
  M.Noborio, J.Suda, T.Kimoto
- Journal Title
  
  Materials Science Forum 527-529
  
  Pages: 1305-1308
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Improved dielectric and interface properties of 4H-SiC MOS structures processed by oxide deposition and N202006
- Author(s)
  T.Kimoto 他
- Journal Title
  
  Materials Science Forum 527-529
  
  Pages: 987-990
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage2006
- Author(s)
  T.Funaki, S. Matsuzaki, T. Kimoto, and T. Hikihara
- Journal Title
  
  IEICE Electron. Express Vol.3, No.6
  
  Pages: 379-384
- NAID
  130000088249
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] Epitaxial growth of 4H-SiC{0001} and reduction of deep levels2006
- Author(s)
  T.Kimoto 他
- Journal Title
  
  Superlattices and Microstructures 40
  
  Pages: 225-232
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Reduction of on-resistance in 4H-SiC multi-RESURF MOSFETs2006
- Author(s)
  T.Kimoto 他
- Journal Title
  
  Materials Science Forum 527-529
  
  Pages: 1305-1308
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage2006
- Author(s)
  Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara
- Journal Title
  
  IEICE Electron. Express Vol. 3, No. 16
  
  Pages: 379-384
- NAID
  130000088249
- Data Source
  KAKENHI-PROJECT-18360137
[Journal Article] SiC migration enhanced embedded epitaxial growth technology2006
- Author(s)
  T.Kimoto 他
- Journal Title
  
  Materials Science Forum 527-529
  
  Pages: 251-254
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Characterization of in-grown stacking faults in 4H-SiC(0001) epitaxial layers and its impacts on high-voltageSchottky diodes2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  Appl. Phys. Lett. 87
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (11-20), and 6H-SiC(0001)2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  IEEE Trans.Electron Devices 52
  
  Pages: 112-117
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] 1330 V,67 mΩcm^2 4H-Sic(0001)RESURF MOSFET2005
- Author(s)
  Kimoto他
- Journal Title
  
  IEEE Electron Device Lett. 26
  
  Pages: 649-651
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Design and fabrication of RESURF MOSFETS on 4H-SiC(0001), (1120), and 6H-SiC(0001)2005
- Author(s)
  T.Kimoto
- Journal Title
  
  IEEE Trans.Electron Devices Vol.52
  
  Pages: 112-117
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Dose designing for high-voltage 4H-SiC RESURF MOSFETs2005
- Author(s)
  T.Kimoto
- Journal Title
  
  Mat.Sci.Forum Vol.483-485
  
  Pages: 809-812
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  IEEE Trans. Electron Devices 52
  
  Pages: 1954-1962
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (1120) formed by N_2O oxidation2005
- Author(s)
  T.Kimoto
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.44
  
  Pages: 1213-1218
- NAID
  10015594453
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Interface properties of metal-oxide-semiconductor structureson 4H-SiC{0001} and (1120) formed by N_2O oxidation2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  Jpn.J.Appl.Phys. 44
  
  Pages: 1213-1218
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001)2005
- Author(s)
  T.Kimoto
- Journal Title
  
  J.Appl.Phys. Vol.98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001)2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  J.Appl.Phys. 98
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Dose designing for high-voltage 4H-SiC RESURF MOSFETs2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  Mat.Sci.Forum 483-485
  
  Pages: 809-812
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs2005
- Author(s)
  T.Kimoto
- Journal Title
  
  IEEE Trans.Electron Devices Vol.52
  
  Pages: 1954-1962
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  IEEE Trans.Electron Devices 52
  
  Pages: 1954-1962
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Characterization of in-grown stacking faults in 4H-SiC(0001) epitaxial layers and its impacts on high-voltage Schottky diodes2005
- Author(s)
  T.Kimoto
- Journal Title
  
  Appl.Phys.Lett. Vol.87
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Characterization of in-grown stacking faults in 4H-SiC(0001) epitaxial layers and its impacts on high-voltage Schottky diodes2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  Appl.Phys.Lett. 87
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001)2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  J. Appl. Phys. 98
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] 1330V,67mΩcm^2 4H-SiC(0001)RESURF MOSFET2005
- Author(s)
  T.Kimoto
- Journal Title
  
  IEEE Electron Device Lett. Vol.26
  
  Pages: 649-651
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] 1330 V,67 mΩcm^2 4H-SiC(0001) RESURF MOSFET2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  IEEE Electron Device Lett. 26
  
  Pages: 649-651
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Dose designing for high-voltage 4H-SiC RESURF MOSFETs2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  Mat. Sci. Forum 483-485
  
  Pages: 809-812
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (1120) formed by N_2O oxidation2005
- Author(s)
  T.Kimoto他
- Journal Title
  
  Jpn.J.Appl.Phys. 44
  
  Pages: 1213-1218
- NAID
  10015594453
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] 600V 4H-SiC RESURF-type JFET2004
- Author(s)
  T.Kimoto他
- Journal Title
  
  Mat.Sci.Forum 457-460
  
  Pages: 1189-1192
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Electrical activation of high-concentration aluminum implanted in 4H-SiC2004
- Author(s)
  T.Kimoto他
- Journal Title
  
  J.Appl.Phys. 96
  
  Pages: 4916-4922
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing2004
- Author(s)
  T.Kimoto他
- Journal Title
  
  Appl.Phys.Lett. 85
  
  Pages: 1716-1718
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Robust 4H-SiC ph diodes fabricated using (11-20) face2004
- Author(s)
  T.Kimoto他
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 471-476
- Data Source
  KAKENHI-PROJECT-16360153
[Journal Article] Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition2004
- Author(s)
  T.Kimoto他
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 4105-4109
- NAID
  10013316880
- Data Source
  KAKENHI-PROJECT-16360153
[Patent] 半導体装置、半導体装置の製造方法および熱処理装置2013
- Inventor(s)
  須田淳、奥田貴史、木本恒暢
- Industrial Property Rights Holder
  京都大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-143504
- Filing Date
  2013-07-09
- Data Source
  KAKENHI-PROJECT-21226008
[Patent] 半導体装置の製造方法および熱処理装置2013
- Inventor(s)
  須田淳、奥田貴史、木本恒暢
- Industrial Property Rights Holder
  京都大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-143504
- Filing Date
  2013-07-09
- Data Source
  KAKENHI-PROJECT-21226008
[Patent] 半導体素子及び半導体素子の製造2011
- Inventor(s)
  木本恒暢、須田淳
- Industrial Property Rights Holder
  京都大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2011-059992
- Filing Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-21226008
[Patent] 半導体素子及び半導体素子の製造方法2011
- Inventor(s)
  木本恒暢
- Industrial Property Rights Holder
  京都大学
- Industrial Property Number
  2011-059992
- Filing Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-21226008
[Patent] 半導体素子の製造方法2005
- Inventor(s)
  木本恒暢
- Industrial Property Rights Holder
  京都大学
- Industrial Property Number
  2005-031093
- Filing Date
  2005-02-07
- Data Source
  KAKENHI-PROJECT-16360153
[Presentation] Defect electronics in SiC for high-voltage power devices and future prospects2019
- Author(s)
  T. Kimoto
- Organizer
  KIEEME-Silicon Carbide Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03779
[Presentation] SiC vertical-channel n- and p-JFETs fully fabricated by ion implantation2018
- Author(s)
  M. Kaneko, U. Grossner, and T. Kimoto
- Organizer
  European Conf. on Silicon Carbide and Related Materials 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03779
[Presentation] Reduction of interface state density in SiC (0001) MOS structures by very-low-oxygen-partial-pressure annealing2018
- Author(s)
  T. Kobayashi, K. Tachiki, K. Ito, Y. Matsushita, T. Kimoto
- Organizer
  European Conf. on Silicon Carbide and Related Materials 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03779
[Presentation] 400℃ operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate2018
- Author(s)
  M. Nakajima, M. Kaneko, and T. Kimoto
- Organizer
  European Conf. on Silicon Carbide and Related Materials 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03779
[Presentation] Defect electronics in SiC for high-voltage power devices2018
- Author(s)
  T. Kimoto, A. Iijima, S. Yamashita, and H. Niwa
- Organizer
  4th Intensive Discussion on Growth of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03779
[Presentation] Junction technology in SiC for high-voltage power devices2013
- Author(s)
  T. Kimoto, K. Kawahara, H. Niwa, T. Okuda, and J. Suda
- Organizer
  Ext. Abstr. of IEEE 13th Int. Workshop on Junction Technology
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Ultrahigh-voltage SiC devices for future power infrastructure2013
- Author(s)
  T. Kimoto
- Organizer
  Proc. of 43th Europ. Solid-State Device Research Conf
- Place of Presentation
  Bucharest
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Progress and future challenges of high-voltage SiC power devices2013
- Author(s)
  T. Kimoto, H. Miyake, H. Niwa, T. Okuda, N. Kaji, and J. Suda
- Organizer
  2013 Materials Research Society Fall Meeting
- Place of Presentation
  Boston, USA
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Junction technology in SiC for high-voltage power devices2013
- Author(s)
  T. Kimoto, K. Kawahara, H. Niwa, T. Okuda, and J. Suda
- Organizer
  IEEE 13th Int. Workshop on Junction Technology
- Place of Presentation
  Kyoto
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Temperature dependence of impact ionization coefficients in 4H-SiC2013
- Author(s)
  H. Niwa, J. Suda, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Ultrahigh-voltage SiC devices for future power infrastructure2013
- Author(s)
  T. Kimoto
- Organizer
  43th Europ. Solid-State Device Research Conf.,
- Place of Presentation
  Bucharest, Romania
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Fundamentals and frontiers of SiC power device technology2013
- Author(s)
  T. Kimoto
- Organizer
  Short Course of 25th Int. Symp. of Power Semiconductor Devices & ICs
- Place of Presentation
  Kanazawa
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Ultrahigh-voltage (> 20 kV) SiC PiN diodes with a space-modulated JTE and lifetime enhancement process via thermal oxidation2013
- Author(s)
  N. Kaji, H. Niwa, J. Suda, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Generation and elimination of the Z1/2 center in 4H-SiC2012
- Author(s)
  T. Kimoto, K. Kawahara, B. Zippelius and J. Suda
- Organizer
  2012 Spring Meeting, Materials Research Society
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] "Defect electronics in SiC and fabrication of ultrahigh-voltage bipolar devices2012
- Author(s)
  T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, S. Ichikawa, and Y. Nishi
- Organizer
  Electrochemical. Soc. Fall Meeting 2012
- Place of Presentation
  Honolulu
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Breakdown characteristics of 12-20 kV-class 4H-SiC PiN diodes with improved junction termination structures2012
- Author(s)
  H. Niwa, G. Feng, J. Suda, and T. Kimoto
- Organizer
  2012 24th Int. Symp. on Power Semiconductor Devices & IC's
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Defect electronics in SiC for high-voltage power devices2012
- Author(s)
  T. Kimoto, J. Suda, K. Kawahara, H. Niwa, T. Okuda, N. Kaji, and S. Ichikawa
- Organizer
  9th Europ. Conf. on Silicon Carbide and Related Materials
- Place of Presentation
  St. Petersburg, Russia
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Defect electronics in SiC and fabrication of ultrahigh-voltage bipolar devices2012
- Author(s)
  T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, and Y. Nishi
- Organizer
  Electrochemical. Soc. Fall Meeting 2012
- Place of Presentation
  Honolulu
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Progress and future challenges of SiC power devices2012
- Author(s)
  T. Kimoto and J. Suda
- Organizer
  8th Handai Nanoscience and Nanotechnology Int. Symp.
- Place of Presentation
  Osaka, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Fast epitaxial growth and defect control of SiC toward ultra high-voltage power devices2011
- Author(s)
  T.Kimoto, J.Suda, G.Feng
- Organizer
  Asia-Paciffic Workshop on Widegap Semiconductors
- Place of Presentation
  鳥羽国際ホテル,鳥羽、三重(招待講演)
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] SiC R&D in Japan2011
- Author(s)
  T.Kimoto
- Organizer
  Int.SiC Power Electronics Applications Workshop
- Place of Presentation
  Kista Science Tower, Stockholm, Sweden(招待講演)
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] High-voltage SiC power devices for energy electronics2011
- Author(s)
  T.Kimoto, J.Suda
- Organizer
  the 2011 Int.Conf.on Solid state Devices and Materials
- Place of Presentation
  愛知県産業労働センター,名古屋、愛知(招待講演)
- Year and Date
  2011-09-27
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Experimental study on various junction terminat ion structures applied to 15kV 4H-SiC PiN diodes2011
- Author(s)
  H.Niwa, G.Feng, J.Suda, T.Kimoto
- Organizer
  Int.Conf.on Silicon Carbide and Related Materials 2011
- Place of Presentation
  ルネッサンスクリーブランドホテル,Cleveland, USA
- Year and Date
  2011-09-14
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Elimination of deep levels in thick SiC epilayers by thermal oxidation and proposal of the analytical model2011
- Author(s)
  K.Kawahara, J.Suda, T.Kimoto
- Organizer
  Int.Conf.on Silicon Carbide and Related Materials 2011
- Place of Presentation
  ルネッサンスクリーブランドホテル,Cleveland, USA(招待講演)
- Year and Date
  2011-09-16
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] SiC technologies for future energy electronics2010
- Author(s)
  T.Kimoto
- Organizer
  2010 VLSI Technology Symposium
- Place of Presentation
  Honolulu
- Year and Date
  2010-06-14
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] SiC technologies for future energy electronics2010
- Author(s)
  T. Kimoto
- Organizer
  Tech. Digests of 2010 VLSI Technology Symp
- Place of Presentation
  Honolulu
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Defect control in growth and processing of 4H-SiC for power device applications2009
- Author(s)
  T. Kimoto, G. Feng, T. Hiyoshi, K. Kawahara, M. Noborio, and J. Suda
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2009
- Place of Presentation
  Nurnberg
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Point and extended defects in SiC and their impact on modern technological processes2009
- Author(s)
  T.Kimoto
- Organizer
  25th Int. Conf. on Defects in Semiconductors
- Place of Presentation
  St.Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] 4H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose2008
- Author(s)
  M. Noborio, J. Suda, and T. Kimoto
- Organizer
  20th Int. Symposium on Power Semiconductor Devices & IC's
- Place of Presentation
  Orlando
- Year and Date
  2008-05-21
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Spatial profilling of planar defects in 4H-SiC epilayers using micro-photoluminescence mapping2008
- Author(s)
  G. Feng, J. Suda, and T. Kimoto
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2008
- Place of Presentation
  Barcelona
- Year and Date
  2008-09-08
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose2008
- Author(s)
  M. Noborio, J. Suda, T. Kimoto
- Organizer
  Proc. of 20th Int. Symp. on Power Semiconductor Devices & IC's
- Place of Presentation
  Orlando, USA
- Year and Date
  2008-05-19
- Data Source
  KAKENHI-PROJECT-18360137
[Presentation] First demonstration of SiC MISFETs with 4H-AIN gate dielectric2008
- Author(s)
  M. Horita, M. Noborio, T. Kimoto, and J. Suda
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2008
- Place of Presentation
  Barcelona
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] 4H-SiC double RESURF MOSFETs with a record perfomance by increasing RESURF dose2008
- Author(s)
  M. Noborio, J. Suda, T. Kimoto
- Organizer
  Proc. of 20th Int. Symposium on Power Semiconductor Devices &IC's
- Place of Presentation
  Orlando, Florida
- Year and Date
  2008-05-21
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose2008
- Author(s)
  M. Noborio, J. Suda, and T. Kimoto
- Organizer
  Proc. of 20th Int. Symp. on Power Semiconductor Devices, IC's, Orlando
- Place of Presentation
  USA
- Year and Date
  2008-05-19
- Data Source
  KAKENHI-PROJECT-18360137
[Presentation] Deep levels generated by ion-implantation in n-and p-type 4H-SiC2008
- Author(s)
  K. Kawahara, G. Alfieri, and T. Kimoto
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2008
- Place of Presentation
  Barcelona
- Year and Date
  2008-09-08
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Capacitance spectroscopy study of midgap levels in n-type SiC polytypes2008
- Author(s)
  G. Alfieri, and T. Kimoto
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2008
- Place of Presentation
  Barcelona
- Year and Date
  2008-09-08
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Electrical characterization of MOS structure with deposited oxides Annealed in N_2O or NO2008
- Author(s)
  M. Grieb, M. Noborio, D. Peters, A. J. Bauer , P. Friedrichs, T. Kimoto, and H. Ryssel
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2008
- Place of Presentation
  Barcelona
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO_2 Stack Gate Structures2007
- Author(s)
  M. Noborio, J. Suda and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu, Japan
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures2007
- Author(s)
  M. Noborio, J. Suda, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials2007
- Place of Presentation
  Ohtsu, Japan
- Year and Date
  2007-10-27
- Data Source
  KAKENHI-PROJECT-18360137
[Presentation] Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures2007
- Author(s)
  M. Noborio, J. Suda and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  大津市
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PROJECT-18360137
[Presentation] Search for hydrogen related defects in p-type 6H and 4H-SiC2007
- Author(s)
  G. Alfieri and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007 Otsu
- Place of Presentation
  Otsu
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes2007
- Author(s)
  T. Hiyoshi, T. Hori, J. Suda and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu
- Year and Date
  2007-10-16
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Temperature Dependence of Electrical Properties in Al-doped 4H-SiC Epitaxial Layers Investigated by Hall-Effect Measurements2007
- Author(s)
  A. Koizumi, J. Suda and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures2007
- Author(s)
  M. Noborio, J. Suda and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PROJECT-18206032

1. MATSUNAMI Hiroyuki (50026035)

# of Collaborated Projects: 19 results

# of Collaborated Products: 0 results
2. FUYUKI Takashi (10165459)

# of Collaborated Projects: 17 results

# of Collaborated Products: 0 results
3. YOSHIMOTO Masahiro (20210776)

# of Collaborated Projects: 16 results

# of Collaborated Products: 0 results
4. JUN Suda (00293887)

# of Collaborated Projects: 5 results

# of Collaborated Products: 55 results
5. NISHI Yusuke (10512759)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
6. HIKIHARA Takashi (70198985)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
7. WADA Osami (10210973)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. FUNAKI Tsuyoshi (20263220)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
9. SUSUKI Susuki Yoshihiko (40402961)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. SARAIE Junji (90026154)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. MATSUMURA Nobuo (60107357)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. PENSL G.

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. CHOYKE W.j.

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. GERHARD Pens

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. WOLFGANG.J. チョイケ

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kimoto Tsunenobu 木本 恒暢

木本 恒暢 キモト ツネノブ

TSUNENOBU Kimoto 木本 恒暢

KIMOTO Tsunenobu 木本 恒暢

Research Projects

Research Products

Co-Researchers

半絶縁性SiCの物性・欠陥解明とイオン注入による相補型ロバストJFETの作製Principal InvestigatorOngoing

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Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking VoltagePrincipal Investigator

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超高耐圧ロバスト素子を目指した炭化珪素半導体の欠陥制御に関する研究Principal Investigator

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Study on SiC Super-Junction Power MOSFETs Utilizing Ion Implantation and Embedded Epitaxial GrowthPrincipal Investigator

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Fundamental Study on Low-loss SiC Power Devices Using Multi pn JunctionsPrincipal Investigator

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High-Voltage, High-Efficiency, High-Speed Power MOSFET Using Wide Bandgap Semiconductor SiCPrincipal Investigator

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Principal Investigator

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Review Section

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Principal Investigator

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Principal Investigator

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Principal Investigator

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Principal Investigator

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Principal Investigator

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ワイドギャッブ半導体SiC/GaNヘテロ接合の作製と物性評価Principal Investigator

Principal Investigator

Project Period (FY)

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Kimoto Tsunenobu 木本恒暢

木本恒暢キモトツネノブ

TSUNENOBU Kimoto 木本恒暢

KIMOTO Tsunenobu 木本恒暢