Suda Jun 須田淳

… Alternative Names

Researcher Number	00293887
Other IDs
Affiliation (Current)	2020: 名古屋大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help	2016: 京都大学, 大学院工学研究科, 准教授 2012 – 2015: 京都大学, 工学(系)研究科(研究院), 准教授 2013: 京都大学, 大学院工学研究科, 准教授 2007 – 2012: 京都大学, 工学研究科, 准教授 2010: Kyoto University, 大学院・工学研究科, 准教授 … More
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Electron device/Electronic equipment Except Principal Investigator Electronic materials/Electric materials / Science and Engineering / Applied optics/Quantum optical engineering / Electronic materials/Electric materials / Crystal engineering
Keywords	Principal Investigator 分子線エピタキシー / ポリタイプ / SiC / 窒化アルミニウム / 炭化珪素 / 成長機構 / AlN / MBE / 界面 / III族窒化物 … More Except Principal Investigator パワーデバイス / MOSFET / シリコンカーバイド / 窒化物半導体 / 非線形光学定数 / 波長変換 / キャリア寿命 / 炭化珪素 / 拡張欠陥 / 点欠陥 / Silicon Carbide / Power Device / 超接合 / イオン注入 / 埋め込み成長 / 非線形光学材料 / 第2高調波発生 / 疑似位相整合 / 内部電界 / 電場誘起第2高調波発生 / SiC / 多重反射効果 / メーカーフリンジ法 / ウェッジ法 / 半導体 / 結晶欠陥 / 絶縁破壊 / 深い準位 / PiNダイオード / 接合終端 / 酸化膜 / 半導体界面 / チャネル移動度 / Oxide / Semiconductor Interface / Channel Mobility / pn接合 / 電界集中緩和 / デバイスシミュレーション / Multi pn Junction / RESURF Structure / InN / InGaN / 混晶組成 / 極微領域評価 / MBE / 転位 / リーク電流 / 不活性化 Less

Dislocation passivation in InGaN by intentinally using immiscible nature during MBE growth by DERI method
- Principal Investigator
  
  NANISHI YASUSHI
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Ritsumeikan University
Coherent growth of high-quality group-III nitirides on SiC substrates and its device applicationsPrincipal Investigator
- Principal Investigator
  
  Suda Jun
- Project Period (FY)
  2012 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
Temperature independent SiC photodetector operating up to 500 degreeCPrincipal Investigator
- Principal Investigator
  
  SUDA Jun
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kyoto University
Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking Voltage
- Principal Investigator
  
  KIMOTO Tsunenobu
- Project Period (FY)
  2009 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
超高耐圧ロバスト素子を目指した炭化珪素半導体の欠陥制御に関する研究
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
Growth of aluminum nitride with a new crystal structure for deep-ultraviolet light emitting devicesPrincipal Investigator
- Principal Investigator
  
  SUDA Jun
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
Accurate measurements of the second-order nonlinear-optical coefficients of SiC
- Principal Investigator
  
  SHOJI Ichiro
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Chuo University
窒化物半導体の非線形光学定数の精密評価と内部電界による制御
- Principal Investigator
  
  KONDO Takashi
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Study on SiC Super-Junction Power MOSFETs Utilizing Ion Implantation and Embedded Epitaxial Growth
- Principal Investigator
  
  TSUNENOBU Kimoto
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
ヘテロバレント・ヘテロポリタイプSiC上III族窒化物結晶成長の総合的理解と制御Principal Investigator
- Principal Investigator
  
  須田淳
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
Fundamental Study on Low-loss SiC Power Devices Using Multi pn Junctions
- Principal Investigator
  
  KIMOTO Tsunenobu
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYOTO UNIVERSITY
ワイドギャップ半導体ヘテロ界面の電子物性制御とパワーデバイスの高性能化への展開Principal Investigator
- Principal Investigator
  
  須田淳
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
High-Voltage, High-Efficiency, High-Speed Power MOSFET Using Wide Bandgap Semiconductor SiC
- Principal Investigator
  
  KIMOTO Tsunenobu
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYOTO UNIVERSITY
有機金属分子線エピタキシー法による立方晶窒化ガリウムの結晶成長機構の解明と応用Principal Investigator
- Principal Investigator
  
  須田淳
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University

[Book] Silicon Carbide Epitaxy 42012
- Author(s)
  T. Kimoto, G. Feng, K. Danno, T. Hiyoshi and J. Suda
- Publisher
  Research Signpost,
- Data Source
  KAKENHI-PROJECT-21226008
[Book] "4H-SiC epitaxial growth and defect characterization", Silicon Carbide Epitaxy 42012
- Author(s)
  T. Kimoto, G. Feng, K. Danno, T. Hiyoshi and J. Suda
- Publisher
  Publisher Research Signpost
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy2017
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 121 Pages: 095703-095703
- DOI
  10.1063/1.4977201
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419
[Journal Article] Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy2016
- Author(s)
  Mitsuaki Kaneko, Tsunenobu Kimoto, and Jun Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 2 Pages: 025502-025502
- DOI
  10.7567/apex.9.025502
- NAID
  210000137796
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-14J07117, KAKENHI-PROJECT-24360009
[Journal Article] Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE2016
- Author(s)
  Mitsuaki Kaneko, Tsunenobu Kimoto, and Jun Suda
- Journal Title
  
  Phisica Satatus Solidi B
  
  Volume: -
- DOI
  10.1002/pssb.201552649
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-14J07117, KAKENHI-PROJECT-24360009
[Journal Article] Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps2014
- Author(s)
  H. Okumura, T. Kimoto and J. Suda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Pages: 071603-071603
- DOI
  10.1063/1.4892807
- NAID
  120005669315
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360009
[Journal Article] Effects of TMSb Overpressure on InSb Surface Morphology for InSb Epitaxial Growth Using Low Pressure Metalorganic Chemical Vapor Deposition2014
- Author(s)
  S. Park, J. Jung, C. Seok, K. Shin, S. Park, Y. Nanishi, Y. Park, E. Yoon
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 401 Pages: 518-522
- DOI
  10.1016/j.jcrysgro.2013.10.062
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26600090
[Journal Article] Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime2013
- Author(s)
  N. Kaji, H. Niwa, J. Suda, and T. Kimoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 7R Pages: 070204-070204
- DOI
  10.7567/jjap.52.070204
- NAID
  210000142425
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation2013
- Author(s)
  Takafumi Okuda, Tsunenobu Kimoto, and Jun Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 12 Pages: 121301-121301
- DOI
  10.7567/apex.6.121301
- NAID
  40019923235
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J06044, KAKENHI-PROJECT-21226008
[Journal Article] Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy2013
- Author(s)
  M. Kaneko, R. Kikuchi, H. Okumura, T. Kimoto and J. Suda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 8S Pages: 08JE21-08JE21
- DOI
  10.7567/jjap.52.08je21
- NAID
  210000142665
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360009
[Journal Article] Deep levels generated by thermal oxidation in p-type 4H-SiC2013
- Author(s)
  Koutarou Kawahara, et al.
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113
- DOI
  10.1063/1.4776240
- NAID
  120005439688
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J05621, KAKENHI-PROJECT-21226008
[Journal Article] Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance2013
- Author(s)
  Koutarou Kawahara, et al.
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 102
- DOI
  10.1063/1.4796141
- NAID
  120005439685
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J05621, KAKENHI-PROJECT-21226008
[Journal Article] Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation2013
- Author(s)
  T. Okuda, T. Kimoto, and J. Suda
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 6
- NAID
  40019923235
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC2013
- Author(s)
  K. Kawahara, J. Suda, and T. Kimoto,
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 5 Pages: 051301-051301
- DOI
  10.7567/apex.6.051301
- NAID
  10031174299
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] AlGaN/SiC heterojunction bipolar transistors featuring AlN/GaN short-period superlattice emitter2013
- Author(s)
  H. Miyake, T. Kimoto and J. Suda
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 60 Pages: 2768-2775
- DOI
  10.1109/ted.2013.2273499
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360009
[Journal Article] Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)2013
- Author(s)
  M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 6 Pages: 062604-062604
- DOI
  10.7567/apex.6.062604
- NAID
  10031181971
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-24360009
[Journal Article] Thermo-Optic Coefficients of 4H-SiC, GaN, and AlN for Ultraviolet to Infrared Regions up to 500 $^{\circ}$C2012
- Author(s)
  N.Watanabe, T. Kimoto, and J. Suda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Pages: 112101-112101
- DOI
  10.1143/jjap.51.112101
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656230
[Journal Article] 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension2012
- Author(s)
  H. Niwa, J. Suda, and T. Kimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 6 Pages: 064001-064001
- DOI
  10.1143/apex.5.064001
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes2012
- Author(s)
  S. Ichikawa, K. Kawahara, J. Suda, and T. Kimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 10 Pages: 101301-101301
- DOI
  10.1143/apex.5.101301
- NAID
  10031117540
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Breakdown characteristics of 15-kV-class 4H-SiC PiN diodes with various junction termination structures2012
- Author(s)
  H. Niwa, G. Feng, J. Suda, and T. Kimoto
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 59 Pages: 2748-2752
- DOI
  10.1109/ted.2012.2210044
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Analytical model for reduction of deep levels in SiC by thermal oxidation2012
- Author(s)
  K. Kawahara, J. Suda, and T. Kimoto
- Journal Title
  
  J. Appl. Phys
  
  Volume: 111
- DOI
  10.1063/1.3692766
- NAID
  120004057133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 $^{\circ}$C2012
- Author(s)
  Naoki Watanabe, 他
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 9 Pages: 094101-094101
- DOI
  10.1143/apex.5.094101
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J05864, KAKENHI-PROJECT-24656230
[Journal Article] AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy2012
- Author(s)
  H.Okumura, T. Kimoto and J. Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 5 Pages: 051002-051002
- DOI
  10.1143/apex.5.051002
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360009
[Journal Article] Space-modulated junction termination extension for ultrahigh-voltage p-i-n diodes in 4H-SiC2012
- Author(s)
  G. Feng, J. Suda, and T. Kimoto
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 59 Pages: 414-418
- DOI
  10.1109/ted.2011.2175486
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] 21-kV SiC BJTs with space-modulated junction termination extension2012
- Author(s)
  H. Miyake, T. Okuda, H. Niwa, T. Kimoto, and J. Suda
- Journal Title
  
  IEEE Electron Device Lett.
  
  Volume: 33 Pages: 1598-1600
- DOI
  10.1109/led.2012.2215004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] 21-kV SiC BJTs with space-modulated junction termination extension2012
- Author(s)
  H. Miyake, T. Okuda, H. Niwa, T. Kimoto, and J. Suda
- Journal Title
  
  IEEE Electron Device Lett
  
  Volume: 33 Pages: 1598-1600
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Carrier recombination in n-type 4H-SiC epilayers with long carrier lifetimes2012
- Author(s)
  S. Ichikawa, K. Kawahara, J. Suda, and T. Kimoto
- Journal Title
  
  Appl. Phys. Exp
  
  Volume: 5
- NAID
  10031117540
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence manning2011
- Author(s)
  G. Feng, J. Suda, and T. Kimoto
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 110
- DOI
  10.1063/1.3622336
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth2011
- Author(s)
  H.Okumura, T.Kimoto, J.Suda
- Journal Title
  
  Applied Physics Express 4
  
  Pages: 25502-25502
- NAID
  10027783561
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Origin of Etch Hillocks Formed on On-Axis SiC(000-1) Surfaces by Molten KOH Etching2011
- Author(s)
  J.Suda, T.Kimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50
- NAID
  210000138538
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-tyne 4H-Sic epilavers2011
- Author(s)
  T.Hayashi, T.Asano, J.Suda, T.Kimoto
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 109
- DOI
  10.1063/1.3583657
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth2011
- Author(s)
  H.Okumura, T.Kimoto, J.Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- NAID
  10027783561
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Origin of Etch Hillocks Formed on On-Axis SiC(000-1) Surfaces by Molten KOH Etching2011
- Author(s)
  J.Suda, T.Kimoto
- Journal Title
  
  Japanese Applied Physics 50
  
  Pages: 38002-38002
- NAID
  210000138538
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC(0001)2010
- Author(s)
  J.Suda, T.Kimoto
- Journal Title
  
  Physica Status Solidi (C)
  
  Volume: 7 Pages: 2094-2096
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1-100)2010
- Author(s)
  M.Horita, T.Kimoto, J.Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027014547
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Sources of epitaxial growth-induced stacking faults in 4H-SiC2010
- Author(s)
  G.Feng, J.Suda, T.Kimoto
- Journal Title
  
  Journal of Electronic Material
  
  Volume: 39 Pages: 1166-1169
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC2010
- Author(s)
  K.Kawahara, J.Suda, G.Pensl, T.Kimoto
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- NAID
  120003386608
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC (0001)2010
- Author(s)
  H.Okumura, J.Suda, T.Kimoto
- Journal Title
  
  Physica Status Solidi C7
  
  Pages: 2094-2094
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1-100)2010
- Author(s)
  M.Horita, T.Kimoto, J.Suda
- Journal Title
  
  Applied Physics Express 3
  
  Pages: 51001-51001
- NAID
  10027014547
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers2010
- Author(s)
  T.Kimoto, T.Hiyoshi, T.Hayashi, J.Suda
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- NAID
  120002661513
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Characterization of major in-grown stacking faults in 4H-SiC epilayers2009
- Author(s)
  G.Feng, J.Suda, T.Kimoto
- Journal Title
  
  Physica B : Condensed Matter 23-24
  
  Pages: 4745-4748
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226008
[Journal Article] Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11-20) and (1-100) Planes under Group-III-Rich Conditions2009
- Author(s)
  M.Horita, T.Kimoto, J.Suda,
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 91003-91003
- NAID
  10025517458
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Accurate measurements of second-order nonlinear optical coefficients of 6H and 4H silicon carbide2009
- Author(s)
  Hiroaki Sato, Makoto Abe, Ichiro Shoji, Jun Suda, Takashi Kondo
- Journal Title
  
  J.Opt.Soc.Am.B Vol.26
  
  Pages: 1892-1896
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560038
[Journal Article] A new class of step-and-terrace structure observed on 4H-SiC (0001) after high-temperature gas etching2009
- Author(s)
  J.Suda, T.Kimoto
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 101603-101603
- NAID
  10025518173
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions2009
- Author(s)
  M.Horita, J.Suda, T.Kimoto
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025517458
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Accurate measurements of second-order nonlinear-optical coefficients of silicon carbide2009
- Author(s)
  H. Sato, I. Shoji, J. Suda, and T. Kondo
- Journal Title
  
  Materials Science Forum 615-617
  
  Pages: 315-318
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032003
[Journal Article] A new class of step-and-terrace structure observed on 4H-SiC(0001) after high-temperature gas etching2009
- Author(s)
  J.Suda, T.Kimoto
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025518173
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes2008
- Author(s)
  T. Hiyoshi, T. Hori, J. Suda, and T. Kimoto
- Journal Title
  
  IEEE Transaction on electron Devices 55
  
  Pages: 1841-1846
- NAID
  120001462508
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation2008
- Author(s)
  T. Kimoto, K. Danno, and J. Suda
- Journal Title
  
  Phys. Stat. Sol.(b) 245
  
  Pages: 1327-1336
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Comprehensive analysis of multiple-reflection effects on rotational Maker-fringe experiments2008
- Author(s)
  Makoto Abe, Ichiro Shoji, Jun Suda, Takashi Kondo
- Journal Title
  
  J.Opt.Soc.Am.B Vol.25
  
  Pages: 1616-1624
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560038
[Journal Article] 4H-SiC MIS Capacitors and MISFETs with deposited SiNx/SiO2 stack-gate structures2008
- Author(s)
  M. Noborio, J. Suda, and T. Kimoto
- Journal Title
  
  IEEE Transaction on electron Devices 55
  
  Pages: 2054-2060
- NAID
  120001462509
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Improved performance of 4H-SiC double reduced Surface field metal-oxide- semiconductor field-effect transistors by increasing RESURF doses2008
- Author(s)
  M. Noborio, J. Suda, and T. Kimoto
- Journal Title
  
  Appl. Phys. Express 1
  
  Pages: 1014031-3
- NAID
  10025082727
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Nonpolar 4H-AlN grown on 4H-SiC (1-100) with reduced stacking fault density realized by persistent layer-by-layer growth2008
- Author(s)
  M.Horita, T.Kimoto, J.Suda
- Journal Title
  
  Applied Physics Letters 93
  
  Pages: 82106-82106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Surface Morphologies of 4H-SiC (11-20)and (1-100)Treated by High-Temperature Gas Etching2008
- Author(s)
  M. Horita, T. Kimoto, J. Suda
- Journal Title
  
  Japanese Applied Physics Letters 47
  
  Pages: 1327-1336
- NAID
  40016346953
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes2008
- Author(s)
  T. Hiyoshi, T. Hori, J Suda, T. Kimoto
- Journal Title
  
  IEEE Transaction on electron Devices. 55
  
  Pages: 1841-1846
- NAID
  120001462508
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] 4H-SiC MIS Capacitors and MISFETs with deposited SiNx/Si02 stack-gate structures2008
- Author(s)
  M. Noborio, J. Suda, T. Kimoto
- Journal Title
  
  IEEE Transaction on electron Devices. 55
  
  Pages: 2054-2060
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Surface Morphologies of 4H-SiC (11-20) and (1-100) Treated by High-Temperature Gas Etching2008
- Author(s)
  M.Horita, T.Kimoto, J.Suda
- Journal Title
  
  Japanese Applied Physics Letters 47
  
  Pages: 1327-1327
- NAID
  40016346953
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Comprehensive analysis of multiple-reflection effects on rotational Maker-fringe experiments2008
- Author(s)
  M. Abe, I. Shoji, J. Suda, and T. Kondo
- Journal Title
  
  J. Opt. Soc. Am B 25
  
  Pages: 1616-1624
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032003
[Journal Article] Nonpolar 4H-AlN grown on 4H-SiC (1-100)with reduced stacking fault density realized by persistent layer-by-layer growth2008
- Author(s)
  M. Horita, T. Kimoto, J. Suda
- Journal Title
  
  Applied Physics Letters 93
  
  Pages: 82106-82106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360008
[Journal Article] Hydrogen implantation and annealing-induced exfoliation process in SiC wafers with various crystal orientations2008
- Author(s)
  K. Senga, T. Kimoto, and J. Suda
- Journal Title
  
  Jpn. J. Appl. Phys 47
  
  Pages: 5352-5354
- NAID
  210000065207
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Improvea perrormance 01 4h-STC double reduced Suriace field metal-oxide-semiconductor field-effect transistors by increasing RESURF doses2008
- Author(s)
  M. Noborio, J. Suda, T. Kiraoto
- Journal Title
  
  Appl. Phys. Express. 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Power conversion with SiC devices at extremely high ambient temperatures2007
- Author(s)
  T. Funaki, J. C. Balda, J. Junghans, A. S . Kashyap, H. A. Mantooth, F. Barlow, T. Kimoto and T. Hikihara
- Journal Title
  
  IEEE Trans. Power Electronics 22
  
  Pages: 1321-1329
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-2007
- Author(s)
  Armitage R, Horita M, Suda J, Kimoto T
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 101・3
  
  Pages: 33534-33534
- Data Source
  KAKENHI-PROJECT-16686002
[Journal Article] 4H-SiC lateral double RESURF MOSFETs with low on-resistance2007
- Author(s)
  M. Noborio, J. Suda and T. Kimoto
- Journal Title
  
  IEEE Trans. Electron Devices 54
  
  Pages: 1216-1223
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206032
[Journal Article] Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates2006
- Author(s)
  R.Armitage, J.Suda, T.Kimoto
- Journal Title
  
  Applied Physics Letters 88・1
  
  Pages: 11908-11908
- Data Source
  KAKENHI-PROJECT-16686002
[Journal Article] Impact of III/V ratio on polytype and crystalline quality of AlN grown on 4H-SiC (110) substrate by molecular-beam2006
- Author(s)
  M.Horita, J.Suda, T.Kimoto
- Journal Title
  
  physica status solidi (c) 3・6
  
  Pages: 1503-1506
- Data Source
  KAKENHI-PROJECT-16686002
[Journal Article] High-quality nonpolar 4H-AlN grown on 4H-SiC (11-20) substrate by molecular-beam epitaxy2006
- Author(s)
  Horita M, Suda J, Kimoto T
- Journal Title
  
  APPLIED PIYSICS LETTERS 45・17-19
  
  Pages: 112117-112117
- Data Source
  KAKENHI-PROJECT-16686002
[Journal Article] Heteroepitaxial Growth of AlN on SiC(0001)-Sacking Mismatch2004
- Author(s)
  J.Suda, N.Onojima, T.Kimoto
- Journal Title
  
  Extended Abstracts of the 23^<rd> Electronic Materials Symposium EMS23
  
  Pages: 150-151
- Data Source
  KAKENHI-PROJECT-16686002
[Journal Article] Cathodoluminescence study of AlN grown on 4H-SiC(11-20)2004
- Author(s)
  M.Horita, N.Onojima, J.Suda, T.Kimoto
- Journal Title
  
  Extended Abstracts of the 23^<rd> Electronic Materials Symposium EMS23
  
  Pages: 149-150
- Data Source
  KAKENHI-PROJECT-16686002
[Journal Article] SiCフォトダイオードの500℃動作の報告論文
- Author(s)
  N.Watanabe, T. Kimoto, and J. Suda
- Volume
  (準備中)
- Data Source
  KAKENHI-PROJECT-24656230
[Journal Article] SiCの光吸収係数の温度依存性に関する論文
- Author(s)
  N.Watanabe, T. Kimoto, and J. Suda
- Volume
  (投稿済み現在minor revisionで改訂対応中)
- Data Source
  KAKENHI-PROJECT-24656230
[Patent] 半導体装置、半導体装置の製造方法および熱処理装置2013
- Inventor(s)
  須田淳、奥田貴史、木本恒暢
- Industrial Property Rights Holder
  京都大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-143504
- Filing Date
  2013-07-09
- Data Source
  KAKENHI-PROJECT-21226008
[Patent] 半導体装置の製造方法および熱処理装置2013
- Inventor(s)
  須田淳、奥田貴史、木本恒暢
- Industrial Property Rights Holder
  京都大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-143504
- Filing Date
  2013-07-09
- Data Source
  KAKENHI-PROJECT-21226008
[Patent] 半導体素子及び半導体素子の製造2011
- Inventor(s)
  木本恒暢、須田淳
- Industrial Property Rights Holder
  京都大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2011-059992
- Filing Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2016
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductor 2016 (IWN2016)
- Place of Presentation
  Orlando, Florida (USA)
- Year and Date
  2016-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] ステップ高さ制御SiC基板上AlN層の高分解能X線回折評価における界面局在ミスフィット転位に起因する横方向サテライトピーク2016
- Author(s)
  金子光顕、木本恒暢、須田淳
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] Fluorine Plasma Treatment on InN Films Grown by RF-MBE2016
- Author(s)
  S. Fukushima, S. Usuda, T. Araki and Y. Nanishi
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県・守山市）
- Year and Date
  2016-07-07
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Study on Nitridation of α-(AlGa)2O3 Using Rf Plasma for AlGaN Growth2016
- Author(s)
  A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市)
- Year and Date
  2016-08-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Study on Nitridation of α-(AlGa)2O3 Using Rf Plasma for AlGaN Growth2016
- Author(s)
  A. Buma, N. Masuda, M. Oda, T. Hitora, T. Araki and Y. Nanishi
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県・守山市）
- Year and Date
  2016-07-07
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Study on Microstructure and Thermal Stability of Rf-Plasma Nitridated α-(AlGa)2O3 Grown by Mist-CVD2016
- Author(s)
  A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
- Organizer
  International Workshop on Nitride Semiconductor 2016 (IWN2016)
- Place of Presentation
  Orlando, Florida (USA)
- Year and Date
  2016-10-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] SiC基板上にPAMBE成長したAlN層の成長初期III/V比による貫通転位発生メカニズムの考察2015
- Author(s)
  金子光顕、木本恒暢、須田淳
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-14
- Invited
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] RF-MBE Growth and Structural Characterization of InN on Mist-CVD-grownα-In2O3/Sapphire2015
- Author(s)
  A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, and T. Hitora
- Organizer
  The 6th International Symposium on Growth of Ⅲ-nitrides,
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Growth and Characterization of InN on α-In2O3/Sapphire by RF-MBE2015
- Author(s)
  N. Masuda, A. Buma, T. Araki, Y. Nanishi, M. Oda, and T. Hitora,
- Organizer
  The 7th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Seoul (Korea)
- Year and Date
  2015-05-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Observation of lateral satellite peaks in nitride semiconductor: HRXRD study of AlN layer grown on step-height-controlled SiC substrate2015
- Author(s)
  Mitsuaki Kaneko, Tsunenobu Kimoto, and Jun Suda
- Organizer
  International Symposium on Growth of Nitride Semiconductors(ISGN-6)
- Place of Presentation
  Act City Hamamatsu
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] マクロステップバンチングが起こる条件でガスエッチングしたSiC表面のマクロテラス上に並んだ1 unit cell高さステップの発生機構2015
- Author(s)
  平井和斗、金子光顕、木本恒暢、須田淳
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] Growth and Characterization of Thin InN Films Grown by RF-MBE2015
- Author(s)
  A. Usuda, K. Komura, M. Aranami, T. Araki, and Y. Nanishi
- Organizer
  The 6th International Symposium on Growth of Ⅲ-nitrides
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Strain controls in AlN layer by ultra-thin GaN interlayer grown on high-quality AlN template coherently grown on SiC(0001) by PAMBE2015
- Author(s)
  Mitsuaki Kaneko, Tsunenobu Kimoto, and Jun Suda
- Organizer
  International Conference on Nitride Semiconductors
- Place of Presentation
  Beijing International conference center
- Year and Date
  2015-09-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] RF-MBE Growth of InN on Mist-CVD Grown α-In2O3/Sapphire2015
- Author(s)
  T. Araki, N. Masuda, A. Buma, Y. Nanishi, M. Oda and T. Hitora
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Characterization of RF Plasma Nitridated α-(AlGa)2O3 for AlGaN Growth2015
- Author(s)
  T. Araki, A. Buma, N. Masuda, M. Oda, T. Hitora, and Y. Nanishi
- Organizer
  The 4th International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2015-05-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] 水素ガスエッチングを施した4H-SiC極性面および無極性面基板の表面形状2014
- Author(s)
  東孝洋，金子光顕，木本恒暢，須田淳
- Organizer
  応用物理学会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] 4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (1120)2014
- Author(s)
  堀田昌宏、登尾正人、木本恒暢、須田淳
- Organizer
  第14回「関西コロキアム電子デバイスワークショップ」
- Place of Presentation
  大阪工業大学うめきたナレッジセンター
- Year and Date
  2014-11-17
- Invited
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] Junction technology in SiC for high-voltage power devices2013
- Author(s)
  T. Kimoto, K. Kawahara, H. Niwa, T. Okuda, and J. Suda
- Organizer
  Ext. Abstr. of IEEE 13th Int. Workshop on Junction Technology
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Large Shifts of Free Excitonic Transition Energies and (0001) due to Strong In-Plane Compressive Strain2013
- Author(s)
  M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Washington, USA
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] Progress and future challenges of high-voltage SiC power devices2013
- Author(s)
  T. Kimoto, H. Miyake, H. Niwa, T. Okuda, N. Kaji, and J. Suda
- Organizer
  2013 Materials Research Society Fall Meeting
- Place of Presentation
  Boston, USA
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] 500℃動作SiC pnフォトダイオード2013
- Author(s)
  渡辺直樹, 木本恒暢, 須田淳
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24656230
[Presentation] Junction technology in SiC for high-voltage power devices2013
- Author(s)
  T. Kimoto, K. Kawahara, H. Niwa, T. Okuda, and J. Suda
- Organizer
  IEEE 13th Int. Workshop on Junction Technology
- Place of Presentation
  Kyoto
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Structural and Optical Characterization of 2H-AlN Coherently-Grown on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy2013
- Author(s)
  M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] Temperature dependence of impact ionization coefficients in 4H-SiC2013
- Author(s)
  H. Niwa, J. Suda, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Ultrahigh-voltage (> 20 kV) SiC PiN diodes with a space-modulated JTE and lifetime enhancement process via thermal oxidation2013
- Author(s)
  N. Kaji, H. Niwa, J. Suda, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Generation and elimination of the Z1/2 center in 4H-SiC2012
- Author(s)
  T. Kimoto, K. Kawahara, B. Zippelius and J. Suda
- Organizer
  2012 Spring Meeting, Materials Research Society
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] "Defect electronics in SiC and fabrication of ultrahigh-voltage bipolar devices2012
- Author(s)
  T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, S. Ichikawa, and Y. Nishi
- Organizer
  Electrochemical. Soc. Fall Meeting 2012
- Place of Presentation
  Honolulu
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Breakdown characteristics of 12-20 kV-class 4H-SiC PiN diodes with improved junction termination structures2012
- Author(s)
  H. Niwa, G. Feng, J. Suda, and T. Kimoto
- Organizer
  2012 24th Int. Symp. on Power Semiconductor Devices & IC's
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Defect electronics in SiC for high-voltage power devices2012
- Author(s)
  T. Kimoto, J. Suda, K. Kawahara, H. Niwa, T. Okuda, N. Kaji, and S. Ichikawa
- Organizer
  9th Europ. Conf. on Silicon Carbide and Related Materials
- Place of Presentation
  St. Petersburg, Russia
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Defect electronics in SiC and fabrication of ultrahigh-voltage bipolar devices2012
- Author(s)
  T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, and Y. Nishi
- Organizer
  Electrochemical. Soc. Fall Meeting 2012
- Place of Presentation
  Honolulu
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Progress and future challenges of SiC power devices2012
- Author(s)
  T. Kimoto and J. Suda
- Organizer
  8th Handai Nanoscience and Nanotechnology Int. Symp.
- Place of Presentation
  Osaka, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] High-Al-content AlGaN Digital Alloy with GaN Mole-fraction Up t0 20% Coherently - Grown on 6H-SiC (0001)2012
- Author(s)
  M. Kaneko, R. Kikuchi, H. Okumura T. Kimoto and J. Suda
- Organizer
  nternat ional Workshop on Nitride Semiconductors 201
- Place of Presentation
  Sapporo
- Year and Date
  2012-10-17
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] Fast epitaxial growth and defect control of SiC toward ultra high-voltage power devices2011
- Author(s)
  T.Kimoto, J.Suda, G.Feng
- Organizer
  Asia-Paciffic Workshop on Widegap Semiconductors
- Place of Presentation
  鳥羽国際ホテル,鳥羽、三重(招待講演)
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] High-voltage SiC power devices for energy electronics2011
- Author(s)
  T.Kimoto, J.Suda
- Organizer
  the 2011 Int.Conf.on Solid state Devices and Materials
- Place of Presentation
  愛知県産業労働センター,名古屋、愛知(招待講演)
- Year and Date
  2011-09-27
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Experimental study on various junction terminat ion structures applied to 15kV 4H-SiC PiN diodes2011
- Author(s)
  H.Niwa, G.Feng, J.Suda, T.Kimoto
- Organizer
  Int.Conf.on Silicon Carbide and Related Materials 2011
- Place of Presentation
  ルネッサンスクリーブランドホテル,Cleveland, USA
- Year and Date
  2011-09-14
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Elimination of deep levels in thick SiC epilayers by thermal oxidation and proposal of the analytical model2011
- Author(s)
  K.Kawahara, J.Suda, T.Kimoto
- Organizer
  Int.Conf.on Silicon Carbide and Related Materials 2011
- Place of Presentation
  ルネッサンスクリーブランドホテル,Cleveland, USA(招待講演)
- Year and Date
  2011-09-16
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Reduction of Threading Dislocation Density in 2H-AlN on 6H-SiC (0001) by Minimizing Nitrogen-Plasma Exposure to SiC Surface before Growth2010
- Author(s)
  H.Okiumura, T.Kimoto, J.Suda
- Organizer
  International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] Anomalously Low Ga Incorporation in High-Al Content AlGaN Grown on (11-20) Nonpolar Plane by Molecular Beam Epitaxy2010
- Author(s)
  S.Ueta, M.Horita, T.Kimoto, J.Suda
- Organizer
  International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA.
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] Reduction of Threading Dislocation Density in 2H-AlN on 6H-SiC (0001) by Minimizing Nitrogen-Plasma Exposure to SiC Surface before Growth2010
- Author(s)
  H.Okiumura, T.Kimoto, J.Suda
- Organizer
  International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Florida, USA.
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] Anomalously Low Ga Incorporation in High-Al Content AlGaN Grown on (11-20) Nonpolar Plane by Molecular Beam Epitaxy2010
- Author(s)
  S.Ueta, M.Horita, T.Kimoto, J.Suda
- Organizer
  International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] n型GaNの2次非線形光学定数精密測定2010
- Author(s)
  阿部真,庄司一郎,須田淳,近藤高志
- Organizer
  Optics & Photonics Japan 2010
- Place of Presentation
  中央大学(神田駿河台)
- Year and Date
  2010-11-08
- Data Source
  KAKENHI-PROJECT-20560038
[Presentation] Defect control in growth and processing of 4H-SiC for power device applications2009
- Author(s)
  T. Kimoto, G. Feng, T. Hiyoshi, K. Kawahara, M. Noborio, and J. Suda
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2009
- Place of Presentation
  Nurnberg
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] 4H-AlGaN/AlN MQW structures isopolytypically grown on 4H-SiC (1-100)2009
- Author(s)
  J.Suda, M.Horita, T.Kimoto,
- Organizer
  Int.Conf.Silicon Carbide and Related Materials 2009 (ICSCRM2009)
- Place of Presentation
  Neurnberg, Germany.
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] 4H-Polytype AlN/AlGaN MQW Structure Isopolytically grown on m-plane 4H-SiC2009
- Author(s)
  M.Horita, T.Kimoto, J.Suda
- Organizer
  Electromic Materials Conference (EMC2009)
- Place of Presentation
  Pennsylvania, USA.
- Year and Date
  2009-06-24
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] (5-1)-bilayer-height step-and-terrace structures formed on 4H-SiC (0001) Si-face by high-temperature Pas etching2009
- Author(s)
  J.Suda
- Organizer
  Int.Conf.Silicon Carbide and Related Materials 2009
- Place of Presentation
  Nurnberg, Germany
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] (5-1)-bilayer-height step-and-terrace structures formed on 4H-SiC (0001) Si-face by high-temperature gas etching2009
- Author(s)
  J.Suda, T.Kimoto
- Organizer
  Int.Conf.Silicon Carbide and Related Materials 2009 (ICSCRM2009)
- Place of Presentation
  Neurnberg, Germany.
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide2008
- Author(s)
  Hiroaki Sato, Ichiro Shoji, Jun Suda, Takashi Kondo
- Organizer
  7th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  バルセロナ
- Year and Date
  2008-09-08
- Data Source
  KAKENHI-PROJECT-20560038
[Presentation] 4H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose2008
- Author(s)
  M. Noborio, J. Suda, and T. Kimoto
- Organizer
  20th Int. Symposium on Power Semiconductor Devices & IC's
- Place of Presentation
  Orlando
- Year and Date
  2008-05-21
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Spatial profilling of planar defects in 4H-SiC epilayers using micro-photoluminescence mapping2008
- Author(s)
  G. Feng, J. Suda, and T. Kimoto
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2008
- Place of Presentation
  Barcelona
- Year and Date
  2008-09-08
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] First Demonstration of SiC MISFETs with 4H-AlN Gate Dielectric Heteroepitaxially-grown on 4H-SiC (11-20)2008
- Author(s)
  M.Horita, T.Kimoto, J.Suda
- Organizer
  Europian Conference on Silicon Carbide and Related Materials (ECSCRM2008)
- Place of Presentation
  Barcelona, Spain.
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] First demonstration of SiC MISFETs with 4H-AIN gate dielectric2008
- Author(s)
  M. Horita, M. Noborio, T. Kimoto, and J. Suda
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2008
- Place of Presentation
  Barcelona
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] 多重反射効果を考慮した回転型メーカーフリンジ精密解析II2008
- Author(s)
  阿部真, 佐藤弘章, 丸山晃市, 田中宏昌, 須田淳, 庄司一郎, 近藤高志
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日大船橋
- Year and Date
  2008-03-30
- Data Source
  KAKENHI-PROJECT-19032003
[Presentation] 4H-SiC double RESURF MOSFETs with a record perfomance by increasing RESURF dose2008
- Author(s)
  M. Noborio, J. Suda, T. Kimoto
- Organizer
  Proc. of 20th Int. Symposium on Power Semiconductor Devices &IC's
- Place of Presentation
  Orlando, Florida
- Year and Date
  2008-05-21
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide2008
- Author(s)
  H. Sato, I. Shoji, J. Suda, and T. Kondo
- Organizer
  7th European Conference on Silicon Carbide and Related Materiak
- Place of Presentation
  Barcelona, Spain
- Year and Date
  2008-09-07
- Data Source
  KAKENHI-PROJECT-19032003
[Presentation] 多重反射効果を考慮した回転型メーカーフリンジ精密解析I2008
- Author(s)
  佐藤弘章, 阿部真, 丸山晃市, 田中宏昌, 須田淳, 庄司一郎, 近藤高志
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日大船橋
- Year and Date
  2008-03-30
- Data Source
  KAKENHI-PROJECT-19032003
[Presentation] ウェッジ法を用いたSiCの2次非線形光学定数精密測定2008
- Author(s)
  佐藤弘章, 袴田真史, 庄司一郎, 須田淳, 近藤高志
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19032003
[Presentation] Accurate Measurement of Nonlinear Optical Coeffcients of 6H Silicon Carbide by Rotational Maker-Fringe Technique2008
- Author(s)
  M. Abe, H. Sato, J. Suda, I. Shoji, and T. Kondo
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  つくば
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-19032003
[Presentation] First Demonstration of SiC MISFETs with 4H-AlN Gate Dielectric Heteroepitaxially-grown on 4H-SiC (11-20)2008
- Author(s)
  M. Horita, T. Kimoto, J. Suda
- Organizer
  Europian Conference on Silicon Carbide and Related Materials (ECSCRM2008)
- Place of Presentation
  Barcelona, Spain
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-20360008
[Presentation] 回転型メーカーフリンジ法を用いた6H-SiCの2次非線形光学定数精密測定2008
- Author(s)
  阿部真, 佐藤弘章, 須田淳, 庄司一郎, 近藤高志
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19032003
[Presentation] Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO_2 Stack Gate Structures2007
- Author(s)
  M. Noborio, J. Suda and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu, Japan
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes2007
- Author(s)
  T. Hiyoshi, T. Hori, J. Suda and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu
- Year and Date
  2007-10-16
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Temperature Dependence of Electrical Properties in Al-doped 4H-SiC Epitaxial Layers Investigated by Hall-Effect Measurements2007
- Author(s)
  A. Koizumi, J. Suda and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] Accurate Determination of Nonlinear Optical Coefficients of Hexagonal Silicon Carbide of Polytype 6H2007
- Author(s)
  M. Abe, K. Maruyama, H. Sato, H. Tanaka, J. Suda, I. Shoji, T. Kondo
- Organizer
  Nonlinear Optics: Materials Fundamentals and Applications
- Place of Presentation
  ハワイ(米国)
- Year and Date
  2007-08-01
- Data Source
  KAKENHI-PROJECT-19032003
[Presentation] Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures2007
- Author(s)
  M. Noborio, J. Suda and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PROJECT-18206032
[Presentation] PAMBE法によるAlN/GaN多層構造における極薄GaN層の成長制御性に関する検討
- Author(s)
  金子光顕、木本恒暢、須田淳
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] SiC(0001)基板上に成長した大きな圧縮歪みを内包するAlN薄膜の光学特性および格子振動数評価
- Author(s)
  金子光顕、奥村宏典、石井良太、船戸充、川上養一、木本恒暢、須田淳
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-24360009
[Presentation] SiC基板上AlN成長層の貫通転位低減における成長初期V/III比の重要性
- Author(s)
  金子光顕、木本恒暢、須田淳
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360009

1. TSUNENOBU Kimoto (80225078)

# of Collaborated Projects: 5 results

# of Collaborated Products: 55 results
2. KONDO Takashi (60205557)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
3. NISHI Yusuke (10512759)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
4. SHOJI Ichiro (90272385)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
5. MATSUNAMI Hiroyuki (50026035)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. NANISHI YASUSHI (40268157)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
7. AKASAKA Tetsuya (90393735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. YAMAGUCHI Tomohiro (50454517)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
9. 荒木努 (20312126)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
10. SATO Hiroaki

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
11. ABE Makoto

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
12. IMURA Masataka

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
13. 川上養一

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
14. 船戸充

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
15. 小出康夫

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Suda Jun 須田 淳

JUN Suda 須田 淳

SUDA Jun 須田 淳

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Coherent growth of high-quality group-III nitirides on SiC substrates and its device applicationsPrincipal Investigator

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Temperature independent SiC photodetector operating up to 500 degreeCPrincipal Investigator

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Growth of aluminum nitride with a new crystal structure for deep-ultraviolet light emitting devicesPrincipal Investigator

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ヘテロバレント・ヘテロポリタイプSiC上III族窒化物結晶成長の総合的理解と制御Principal Investigator

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ワイドギャップ半導体ヘテロ界面の電子物性制御とパワーデバイスの高性能化への展開Principal Investigator

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有機金属分子線エピタキシー法による立方晶窒化ガリウムの結晶成長機構の解明と応用Principal Investigator

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Suda Jun 須田淳

JUN Suda 須田淳

SUDA Jun 須田淳