Nishi Yusuke 西佑介

… Alternative Names

Researcher Number	10512759
Other IDs
Affiliation (Current)	2020: 舞鶴工業高等専門学校, その他部局等, 准教授
Affiliation (based on the past Project Information) *help	2018 – 2019: 京都大学, 工学研究科, 助教 2013: 京都大学, 大学院工学研究科, 助教 2011 – 2013: 京都大学, 工学(系)研究科(研究院), 助教 2008 – 2011: Kyoto University, 工学研究科, 助教 2009: Kyoto University, 大学院・工学研究科, 助教
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Electronic materials/Electric materials / Medium-sized Section 21:Electrical and electronic engineering and related fields
Keywords	Principal Investigator 抵抗変化 / 不揮発性メモリ / 酸化物 / 欠陥準位 / スパッタリング / 構造・機能材料 / 表面・界面物性 / 結晶性 / スパッタ / フォーミング … More Except Principal Investigator 炭化珪素 / パワーデバイス / 結晶欠陥 / キャリア寿命 / 深い準位 / 拡張欠陥 / 点欠陥 / 半導体 / 絶縁破壊 / PiNダイオード / 接合終端 / 半絶縁性基板 / イオン注入 / 電界効果トランジスタ / 耐環境素子 / 相補型素子 Less

Appearance of conductance quantization in binary transition metal based resistive switchingPrincipal InvestigatorOngoing
- Principal Investigator
  
  西佑介
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyoto University
半絶縁性SiCの物性・欠陥解明とイオン注入による相補型ロバストJFETの作製Ongoing
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Kyoto University
Correlation between Fundamental Properties and Resistive Switching Characterisitics in ReRAMPrincipal Investigator
- Principal Investigator
  
  YUSUKE Nishi
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking Voltage
- Principal Investigator
  
  KIMOTO Tsunenobu
- Project Period (FY)
  2009 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
超高耐圧ロバスト素子を目指した炭化珪素半導体の欠陥制御に関する研究
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
Role of Electrical Forming Process in Resistive Switching Effect of Nickel Oxide Thin FilmsPrincipal Investigator
- Principal Investigator
  
  NISHI Yusuke
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (Start-up)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University

All 2020 2019 2018 2014 2013 2012 2011 2009 2008 Other

All Journal Article Presentation

[Journal Article] Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr_0.7Ca_0.3MnO_3-δ/Pt ReRAM cells2020
- Author(s)
  Naoki Kanegami, Yusuke Nishi, Tsunenobu Kimoto
- Journal Title
  
  Applied Physics Letters
  
  Volume: 116 Pages: 013501-013501
- DOI
  10.1063/1.5131090
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04234
[Journal Article] Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells2019
- Author(s)
  Toshiki Miyatani, Yusuke Nishi, Tsunenobu Kimoto
- Journal Title
  
  MRS Advances
  
  Volume: 4 Pages: 2601-2607
- DOI
  10.1557/adv.2019.316
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04234
[Journal Article] Dominant conduction mechanism in TaO x -based resistive switching devices2019
- Author(s)
  Toshiki Miyatani, Yusuke Nishi, Tsunenobu Kimoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: 9 Pages: 090914-090914
- DOI
  10.7567/1347-4065/ab3b68
- NAID
  210000156961
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04234
[Journal Article] Effects of TiO_2 crystallinity and oxygen composition on forming characteristics in Pt/TiO_2/Pt resistive switching cells2018
- Author(s)
  Masaya Arahata,Yusuke Nishi, Tsunenobu Kimoto
- Journal Title
  
  AIP Advances
  
  Volume: 8 Pages: 125010-125010
- DOI
  10.1063/1.5060639
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04234
[Journal Article] Conductance fluctuation in NiO-based resistive switching memory2018
- Author(s)
  Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 124 Pages: 152134-152134
- DOI
  10.1063/1.5037486
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04234
[Journal Article] Microscopic Investigation of the Electrical Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells2013
- Author(s)
  T. Iwata, Y. Nishi, and T. Kimoto
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: vol.52 Pages: 41801-41801
- Data Source
  KAKENHI-PROJECT-23760282
[Journal Article] Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells2013
- Author(s)
  Tatsuya Iwata, Yusuke Nishi, and Tsunenobu Kimoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 4R Pages: 041801-041801
- DOI
  10.7567/jjap.52.041801
- NAID
  210000141938
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760282
[Journal Article] Effects of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures2011
- Author(s)
  Tatsuya Iwata, Yusuke Nishi, and Tsunenobu Kimoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 8 Pages: 081102-081102
- DOI
  10.1143/jjap.50.081102
- NAID
  40018960985
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760282
[Journal Article] Effect of Heat Treatment on the Resistive Switching Characteristics of Pt/NiO/Pt Stack Structures2011
- Author(s)
  T. Iwata, Y. Nishi, and T. Kimoto
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: vol.50 Pages: 81102-81102
- NAID
  40018960985
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] PtまたはTiN下部電極上の遷移金属酸化物の結晶性および抵抗変化特性2019
- Author(s)
  山田和尚、西佑介、木本恒暢
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Ti/Pr_0.7Ca_0.3MnOx/Pt素子におけるフォーミングおよびその後の連続的な抵抗変化現象2019
- Author(s)
  金上尚毅、西佑介、木本恒暢
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Pt/TaOx/Ta_2O_5/Pt素子における“準高抵抗状態”の発現2019
- Author(s)
  宮谷俊輝、西佑介、木本恒暢
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Coexistence of Interface-Type and Filament-Type Resistive Switching Phenomena in Ti/Pr_0.7Ca_0.3MnO_3/Pt Cells2019
- Author(s)
  Naoki Kanegami, Yusuke Nishi, Tsunenobu Kimoto
- Organizer
  Materials Research Society Symposium Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Ti/Pr_0.7Ca_0.3MnOx/Pt素子における界面型抵抗変化現象の解析2019
- Author(s)
  金上尚毅、西佑介、木本恒暢
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Effects of Crystallinity and Oxygen Composition on Forming Characteristics in TMO-Based Resistive Switching Cells2019
- Author(s)
  Yusuke Nishi, Masaya Arahata, Tsunenobu Kimoto
- Organizer
  Materials Research Society Symposium Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Ta酸化物を用いた抵抗変化素子の電気伝導機構2019
- Author(s)
  宮谷俊輝、西佑介、木本恒暢
- Organizer
  第39回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Pt/TaOx/Ta_2O_5/Pt素子における2種類のバイポーラ型抵抗変化の遷移過程で見られるアナログ抵抗変化2019
- Author(s)
  宮谷俊輝、西佑介、木本恒暢
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Impacts of an Asymmetric Stack Structure in TaOx-Based ReRAM Cells on Resistive Switching Characteristics2019
- Author(s)
  Toshiki Miyatani, Yusuke Nishi, Tsunenobu Kimoto
- Organizer
  Materials Research Society Symposium Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Pt/TaOx/Ta_2O_5/Pt素子の直流および交流コンダクタスの温度依存性の解析2019
- Author(s)
  宮谷俊輝、西佑介、木本恒暢
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Distribution of forming characteristics in NiO-based resistive switching cells with two kinds of NiO crystallinity2018
- Author(s)
  Yusuke Nishi, Tsunenbu Kimoto
- Organizer
  Materials Research Society Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Resistance increase by overcurrent suppression in forming process in Pt/TiO_2/Pt cells2018
- Author(s)
  R.yosuke Matsui, Yutaka Kuriyama, Yusuke Nishi, Tsunenbu Kimoto
- Organizer
  Materials Research Society Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Driving force behind reset process in Pt/NiO/Pt stack cells2018
- Author(s)
  Yusuke Nishi, Hiroki Sasakura, Tsunenbu Kimoto
- Organizer
  Int. Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] DC and AC electrical characteristics of Ta_2O_5-based ReRAM cells2018
- Author(s)
  Toshiki Miyatani, Yusuke Nishi, Tsunenbu Kimoto
- Organizer
  Int. Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] Pt/TaOx/Ta_2O_5/Pt抵抗変化素子の直流および交流電気的特性の解析2018
- Author(s)
  宮谷俊輝、西佑介、木本恒暢
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04234
[Presentation] NiO抵抗変化素子の伝導特性と抵抗状態の差異の新たな解釈2014
- Author(s)
  岩田達哉,西佑介,木本恒暢
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] 反応性スパッタNiO薄膜の電気特性に膜の微細構造が及ぼす影響2014
- Author(s)
  岩田達哉,西佑介,木本恒暢
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-17
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Forming Characteristics of NiO-based Resistance Change Random Access Memory2014
- Author(s)
  Y. Nishi, H. Sasakura, T. Iwata, and T. Kimoto
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Weibull Distribution of Forming Char acteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory2013
- Author(s)
  Y. Nishi, T. Iwata, and T. Kimoto
- Organizer
  2013 Materials Research Society Spring Meeting & Exhibit
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2013-04-04
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] ニッケル酸化物を用いた抵抗変化メモリ素子のフォーミング特性に関する研究2013
- Author(s)
  岩田達哉,西佑介,木本恒暢
- Organizer
  第288回電気材料技術懇談会
- Place of Presentation
  大阪大学
- Year and Date
  2013-07-12
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] NiO薄膜の膜質がPt/NiO/Pt素子のフォーミング電圧に及ぼす影響2013
- Author(s)
  岩田達哉,西佑介,木本恒暢
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Year and Date
  2013-09-18
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Pt/ NiO/Pt積層構造におけるフォーミング特性分布2013
- Author(s)
  西佑介,岩田達哉,木本恒暢
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-27
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Impact of the Oxygen Amount of an Oxide Layer and Post Annealing on Forming Voltage and Initial Resistance of NiO-based Resistive Switching Cells2013
- Author(s)
  T. Iwata, Y. Nishi, and T. Kimoto
- Organizer
  2013 Materials Research Society Spring Meeting & Exhibit
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2013-04-05
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Time-Dependent Forming Char acteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory2012
- Author(s)
  Y. Nishi, T. Iwata, D. Horie, and T. Kimoto
- Organizer
  2012 Materials Research Society Spring Meeting & Exhibit
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2012-04-11
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] NiO薄膜を用いたReRAMにおけるフォーミング特性の分布2012
- Author(s)
  堀江大典,西佑介,岩田達哉,木本恒暢
- Organizer
  第73回応用物理学会秋季学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Year and Date
  2012-09-14
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Pt/NiO/Pt抵抗変化素子に形成されたフィラメントの直接観察とその評価2012
- Author(s)
  岩田達哉，西佑介，木本恒暢
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Identification of the location of conductive filaments formed in Pt/NiO/ Pt resistive switching cells and investiga tion on their properties2012
- Author(s)
  Y. Nishi, and T. Kimoto
- Organizer
  2012 Materials Research Society Spring Meeting & Exhibit
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2012-04-11
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Pt/ NiO/Pt抵抗変化素子に形成されたフィラメントの直接観察とその評価2012
- Author(s)
  岩田達哉,西佑介,木本恒暢
- Organizer
  第59回応用物理学会春季学術講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] 金属/TiO2/金属積層構造の抵抗スイッチング特性に対する電極材料の影響2012
- Author(s)
  沖元直樹,岩田達哉,西佑介,木本恒暢
- Organizer
  電子情報通信学会2012シリコン材料・デバイス研究会
- Place of Presentation
  京都大学
- Year and Date
  2012-12-07
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] "Defect electronics in SiC and fabrication of ultrahigh-voltage bipolar devices2012
- Author(s)
  T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, S. Ichikawa, and Y. Nishi
- Organizer
  Electrochemical. Soc. Fall Meeting 2012
- Place of Presentation
  Honolulu
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Defect electronics in SiC and fabrication of ultrahigh-voltage bipolar devices2012
- Author(s)
  T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, and Y. Nishi
- Organizer
  Electrochemical. Soc. Fall Meeting 2012
- Place of Presentation
  Honolulu
- Invited
- Data Source
  KAKENHI-PROJECT-21226008
[Presentation] Pt/NiO/Pt積層構造におけるフォーミング特性の時間依存2012
- Author(s)
  西佑介，堀江大典，岩田達哉，木本恒暢
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Pt/NiO/Pt積層構造におけるフォーミング特性の時間依存2012
- Author(s)
  西佑介,堀江大典,岩田達哉,木本恒暢
- Organizer
  第59回応用物理学会春季学術講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] 抵抗変化型メモリ用Pt/NiO/Pt素子におけるフィラメント形成領域の特定とその評価2011
- Author(s)
  岩田達哉，西佑介，木本恒暢
- Organizer
  電子情報通信学会2011 シリコン材料・デバイス研究会
- Place of Presentation
  奈良先端科学技術大学院大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] 抵抗変化型メモリ用Pt/NiO/Pt素子におけるフィラメント形成領域の特定とその評価2011
- Author(s)
  岩田達哉,西佑介,木本恒暢
- Organizer
  電子情報通信学会2011シリコン材料・デバイス研究会
- Place of Presentation
  奈良先端科学技術大学院大学
- Year and Date
  2011-12-16
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] NiOを用いたReRAMの高温における抵抗スイッチング特性2009
- Author(s)
  岩田達哉、西佑介、木本恒暢
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20860047
[Presentation] 抵抗変化型不揮発性メモリ用NiO薄膜中の欠陥準位の検出2009
- Author(s)
  西佑介、岩田達哉、木本恒暢
- Organizer
  電子情報通信学会2009シリコン材料・デバイス研究会
- Place of Presentation
  奈良先端科学技術大学院大学
- Year and Date
  2009-12-04
- Data Source
  KAKENHI-PROJECT-20860047
[Presentation] NiO薄膜の構造および電気特性へのアニール効果2009
- Author(s)
  西佑介、木本恒暢
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-02
- Data Source
  KAKENHI-PROJECT-20860047
[Presentation] ニッケル酸化物の抵抗変化を用いた不揮発性メモリの基礎研究2009
- Author(s)
  西佑介、岩田達哉、木本恒暢
- Organizer
  第256回電気材料技術懇親会
- Place of Presentation
  中央電気倶楽部
- Year and Date
  2009-07-23
- Data Source
  KAKENHI-PROJECT-20860047
[Presentation] 抵抗変化型不揮発性メモリ用NiO薄膜における電気的特性の組成依存性2009
- Author(s)
  岩田達哉、西佑介、木本恒暢
- Organizer
  電子情報通信学会2009シリコン材料・デバイス研究会
- Place of Presentation
  奈良先端科学技術大学院大学
- Year and Date
  2009-12-04
- Data Source
  KAKENHI-PROJECT-20860047
[Presentation] 抵抗変化型不揮発性メモリ用NiO薄膜の構造および電気特性へのアニール効果2008
- Author(s)
  西佑介、木本恒暢
- Organizer
  電子情報通信学会2008シリコン材料・デバイス研究会
- Place of Presentation
  京都大学
- Year and Date
  2008-12-05
- Data Source
  KAKENHI-PROJECT-20860047
[Presentation] ニッケル酸化物(Ni0)/n^+-Si接合のアドミッタンス法によるNi0中の欠陥準位の検出2008
- Author(s)
  西佑介, 鈴木亮太, 木本恒暢
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-20860047
[Presentation] ニッケル酸化物(NiO)/n+-Si接合のアドミッタンス法によるNiO中の欠陥準位の検出2008
- Author(s)
  西佑介、鈴木亮太、木本恒暢
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-20860047
[Presentation] 抵抗変化型不揮発性メモリ用Ni0薄膜の構造および電気特性へのアニール効果2008
- Author(s)
  西佑介, 木本恒暢
- Organizer
  電子情報通信学会2008シリコン材料・デバイス研究会
- Place of Presentation
  京都大学
- Year and Date
  2008-12-05
- Data Source
  KAKENHI-PROJECT-20860047
[Presentation] NiO薄膜を用いたReRAMにおけるフォーミング特性の分布
- Author(s)
  堀江大典、西佑介、岩田達哉、木本恒暢
- Organizer
  第73回応用物理学会秋季学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Time-Dependent Forming Characteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory
- Author(s)
  Yusuke Nishi, Tatsuya Iwata, Daisuke Horie, and Tsunenobu Kimoto
- Organizer
  2012 Materials Research Society Spring Meeting & Exhibit
- Place of Presentation
  Marriott Marquis, San Francisco, California
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] NiO薄膜の膜質がPt/NiO/Pt抵抗変化素子のフォーミング電圧に及ぼす影響
- Author(s)
  岩田達哉，西佑介，木本恒暢
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] NiO抵抗変化素子の伝導特性と抵抗状態の差異の新たな解釈
- Author(s)
  岩田達哉，西佑介，木本恒暢
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Impact of the Oxygen Amount of an Oxide Layer and Post Annealing on Forming Voltage and Initial Resistance of NiO-based Resistive Switching Cells
- Author(s)
  Tatsuya Iwata, Yusuke Nishi, and Tsunenobu Kimoto
- Organizer
  2013 Materials Research Society Spring Meeting & Exhibit
- Place of Presentation
  Marriott Marquis, San Francisco, California
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Pt/NiO/Pt積層構造におけるフォーミング特性分布
- Author(s)
  西佑介、岩田達哉、木本恒暢
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Identification of the location of conductive filaments formed in Pt/NiO/Pt resistive switching cells and investigation on their properties
- Author(s)
  Tatsuya Iwata, Yusuke Nishi, and Tsunenobu Kimoto
- Organizer
  2012 Materials Research Society Spring Meeting & Exhibit
- Place of Presentation
  Marriott Marquis, San Francisco, California
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Weibull Distributions of Forming Characteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory
- Author(s)
  Yusuke Nishi, Tatsuya Iwata, and Tsunenobu Kimoto
- Organizer
  2013 Materials Research Society Spring Meeting & Exhibit
- Place of Presentation
  Moscone West, San Francisco, California
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] 反応性スパッタNiO 膜の電気特性に膜の微細構造が及ぼす影響
- Author(s)
  岩田達哉，西佑介，木本恒暢
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] Forming Characteristics of NiO-based Resistance Change Random Access Memory
- Author(s)
  Yusuke Nishi, Hiroki Sasakura, Tatsuya Iwata, and Tsunenobu Kimoto
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] 金属/TiO2/金属積層構造の抵抗スイッチング特性に対する電極材料の影響
- Author(s)
  沖元直樹、岩田達哉、西佑介、木本恒暢
- Organizer
  電子情報通信学会2012 シリコン材料・デバイス研究会
- Place of Presentation
  京都大学
- Data Source
  KAKENHI-PROJECT-23760282
[Presentation] ニッケル酸化物を用いた抵抗変化メモリ素子のフォーミング特性に関する研究
- Author(s)
  岩田達哉，西佑介，木本恒暢
- Organizer
  第288回電気材料技術懇談会
- Place of Presentation
  大阪大学
- Data Source
  KAKENHI-PROJECT-23760282

1. KIMOTO Tsunenobu (80225078)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
2. SUDA Jun (00293887)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results

Nishi Yusuke 西 佑介

西 佑介 ニシ ユウスケ

NISHI Yusuke 西 佑介

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Appearance of conductance quantization in binary transition metal based resistive switchingPrincipal InvestigatorOngoing

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半絶縁性SiCの物性・欠陥解明とイオン注入による相補型ロバストJFETの作製Ongoing

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Correlation between Fundamental Properties and Resistive Switching Characterisitics in ReRAMPrincipal Investigator

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Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking Voltage

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超高耐圧ロバスト素子を目指した炭化珪素半導体の欠陥制御に関する研究

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Role of Electrical Forming Process in Resistive Switching Effect of Nickel Oxide Thin FilmsPrincipal Investigator

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[Journal Article] Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr_0.7Ca_0.3MnO_3-δ/Pt ReRAM cells2020

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[Journal Article] Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells2019

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[Journal Article] Dominant conduction mechanism in TaO x -based resistive switching devices2019

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[Journal Article] Effects of TiO_2 crystallinity and oxygen composition on forming characteristics in Pt/TiO_2/Pt resistive switching cells2018

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[Journal Article] Conductance fluctuation in NiO-based resistive switching memory2018

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[Journal Article] Microscopic Investigation of the Electrical Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells2013

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[Journal Article] Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells2013

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Nishi Yusuke 西佑介

西佑介ニシユウスケ

NISHI Yusuke 西佑介