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HIRAMATSU Kazumasa  平松 和政

ORCIDConnect your ORCID iD *help
… Alternative Names

平松 和政  ヒラマツ カズマサ

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Researcher Number 50165205
External Links
Affiliation (based on the past Project Information) *help 2020: 三重大学, 地域イノベーション学研究科, 特任教授(研究担当)
2018: 三重大学, 地域イノベーション学研究科, 特任教授(研究担当)
2016 – 2017: 三重大学, 工学研究科, 教授
2016: 三重大学, 大学院工学研究科, 教授
2012 – 2015: 三重大学, 工学(系)研究科(研究院), 教授 … More
2014: 三重大学, 大学院工学研究科, 教授
2007 – 2012: Mie University, Graduate School of Engineering, Electrical amd Electronic Engineesing, Professor
2007: Mie University, 大学院・工学研究料, 教授
2006: 三重大学, 大学院工学研究科, 教授
2006: 三重大学, 大学院工学碗究科, 教授
2003 – 2005: 三重大学, 工学部, 教授
1999 – 2001: 三重大学, 工学部, 教授
1999: 三重大, 工学部, 教授
1994 – 1995: 名古屋大学, 工学部, 助教授
1991: 名古屋大学, 工学部, 助教授
1988 – 1989: 名古屋大学, 工学部, 講師
1987: 名古屋大学, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Crystal engineering / Applied materials science/Crystal engineering / 電子デバイス・機器工学 / Science and Engineering / Applied materials
Except Principal Investigator
Applied materials science/Crystal engineering / Optical engineering, Photon science / Science and Engineering / 電子材料工学 / Applied materials science/Crystal engineering
Keywords
Principal Investigator
窒化物半導体 / 選択成長 / GaN / 窒化アルミニウム / MOVPE / 窒化ガリウム / AlN / AlGaN / 回折格子 / selective area growth … More / 金属 / 表面プラズモン / 結晶成長 / 紫外線発光素子 / 非極性 / 光取り出し効率 / 電子線リソグラフィ / 回折レンズ / 配光制御 / フォトニック結晶 / ナノ構造 / 発光ダイオード / 反射光モニタリング / HVPE / a面 / 転位密度 / 紫外線発光 / 量子井戸 / 電子線励起 / エピタキシャル成長 / バルク単結晶 / 結晶工学 / 応用光学・量子光工学 / 光物性 / プラズモン誘導光透過 / 極性 / プラズモン誘導透過現象 / 紫外線発光デバイス / AlGaN epitaxial growth / reactive ion etching / electron beam lithography / gratings / ultraviolet light / nano antenna / photonic crystals / III-nitride semiconductors / 電子ビームリソグラフィ / 自然形成 / 電子ビームリソグタフィ / 反射防止構造 / AlGaNエピタキシャル成長 / 反応性イオンエッチング / 紫外線 / ナノアンテナ / dry etching / AIN super lattice / epitaxial lateral overgrowth / electronic emitter / metalorganic vapor phase epitaxy / pyramid structure / gallium nitride / 有機金属気相成長法 / GaN超格子 / ドライエッチング / AlN超格子 / 横方向成長 / 電子エミッター / 有機金属帰気相成長法 / ピラミッド構造 / air-bridge structure / metal mask buried structure / Schottky junction / tungsten nitride / tungsten / 橋脚構造 / 金属埋込み構造 / ショットキー電極 / 窒化タングステン / タングステン / センサー / ワイヤーグリッド偏光子 / 金属薄膜 / 化合物半導体 / 2層型ワイヤーグリッド偏光子 / 表面プラズモンセンサー / 深紫外領域 / AIN / カソードルミネッセンス / 導電性 / 選択横方向成長 / ナノボイド / 量子井戸構造 / ナノボイドエピタキシー / ファセット変調構造 / 歪み / 転位 / ファセット制御 / m面 / 渋紙 / A1GaN / InGaN / 光学フィルム / LED照明 / 成長圧力 / a面AlGaN / a面GaN / 減圧MOVPE / 電子線照射 / 深紫外光源 / 無極性 / 反り / クラック / 貫通転位密度 / バッファ層 / ハイドライド気相成長 / 窒素化ガリウム / InN / ヘテロエピタキシ / 低温成長 / ワイドギャップ半導体 … More
Except Principal Investigator
GaN / 窒化物半導体 / MOVPE / AIN / バッファ層 / AlGaN / 組成変調 / 貫通転位 / AlN / 窒化アルミニウム / 選択成長 / 2層型ワイヤーグリッド構造 / 半導体 / 感度 / 回折格子 / 金属 / 屈折率 / センサー / 光学異方性 / 表面プラズモンセンサー / ワイヤーグリッド構造 / 表面プラズモン / 超格子 / 転位 / 偏析 / 窒化物混晶半導体 / 特異構造場 / 結晶工学 / 結晶成長 / 計算物理 / 量子ドット / 自然超格子 / 極性反転 / ボンドエンジニアリング / ナノ構造 / 特異構造 / 計算科学 / In-site / selective area growth / metal-organic vapor phase epitaxy / Nitride Semiconductor / TEM観察 / ファセット / その場観察 / カソードルミネッセンス / MIS構造 / Zn添加 / 青色LED / A1GaN / 多層構造 / p形GaN / Mg添加 / カソ-ドルルミネッセンス / pn接合形青色LED / GaAlN / 不純物 / 混晶半導体 / ホトルミネセンス / 有機金属化学気相法 / 気相成長 / 青色発光 / ワイドギャップ半導体 / 深紫外光源 / 多重量子井戸 / 紫外光源 / 電子線励起 / ELO / 横方向成長 / 触媒作用 / ハイドライド気相エピタキシャル成長 / 紫外線発光 / ファセット制御 / EPD法 / エッチピット / 加工基板 / 選択横方向成長 / HVPE / ハイドライド気相成長法 / 抵抗率 / SiCl_4 / キャリア濃度 / 伝導性制御 / ZnOバッファ層 / SiO_2マスク / ホモエピタキシ- / ハイドライド気相成長 / バルク単結晶 Less
  • Research Projects

    (19 results)
  • Research Products

    (744 results)
  • Co-Researchers

    (46 People)
  •  Computational materials design for hetero-bond manipulation

    • Principal Investigator
      ITO Tomonori
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Mie University
  •  The plasmonic extraordinary transmission phenomenon of III-nitride semiconductors and application to UV emitting devicesPrincipal Investigator

    • Principal Investigator
      Hiramatsu Kazumasa
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Mie University
  •  The metal wire grid surface plasmon sensor by using the optical anisotropy of GaN

    • Principal Investigator
      Motogaito Atsushi
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Optical engineering, Photon science
    • Research Institution
      Mie University
  •  Study on localized surface plasmon resonance on III-nitride semiconduvtors in deep-UV regionPrincipal Investigator

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2013 – 2014
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Mie University
  •  Nano-void epitaxy of III-nitride semiconductors and controlling light emitting properties of deep-UV lightPrincipal Investigator

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Control of Deep Ultra-violet Emission and Modulation Epitaxy of Nitride Semicondusturs.

    • Principal Investigator
      MIYAKE Hideto
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectraPrincipal Investigator

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  High growth-rate hydride-vapor-phase of aluminum nitride

    • Principal Investigator
      MIYAKE Hideto
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Epitaxial growth and defect controlling technique of AlGaN with high AlN molar fractionPrincipal Investigator

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Mie University
  •  Study on light emitting diode for lighting controlling the luminous intensity distribution by nano-photonics structuresPrincipal Investigator

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Epitaxial Growth of AIGaN Using Selective Area Gmwth Technique

    • Principal Investigator
      MIYAKE Hideto
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Controlling of UV light by using III-nitride based photonic crystals with nano-antennaPrincipal Investigator

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Fabrication of Buried Metal Structure and Reduction of Dislocation Density for Nitride Semiconductors by Selective Area Growth TechniquePrincipal Investigator

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron AffinityPrincipal Investigator

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Mie University
  •  ホモエピタキシ-基板用のGaNバルク単結晶の電気伝導度制御に関する研究

    • Principal Investigator
      後藤 英雄
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Chubu University
      Nagoya University
  •  選択成長を用いたGaNバルク単結晶の高品質化に関する研究Principal Investigator

    • Principal Investigator
      平松 和政
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Nagoya University
  •  窒化物ワイドギャップ半導体の結晶成長の低温化に関する研究Principal Investigator

    • Principal Investigator
      平松 和政
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Nagoya University
  •  高エネルギーギャップ半導体の結晶成長と光学的性質に関する研究

    • Principal Investigator
      赤崎 勇
    • Project Period (FY)
      1987
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  高性能GaN系青色LEDの試作研究

    • Principal Investigator
      赤崎 勇
    • Project Period (FY)
      1987 – 1989
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      電子材料工学
    • Research Institution
      Nagoya University

All 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation Book Patent

  • [Book] 新インターユニバーシティ半導体工学2009

    • Author(s)
      平松和政、元垣内敦司, 他4名
    • Publisher
      (株)オーム社
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Book] 新インターユニバーシティ 半導体工学2009

    • Author(s)
      平松和政、元垣内敦司, 他4名
    • Publisher
      (株)オーム社
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Book] 新インターユニバーシティ 半導体工学2009

    • Author(s)
      平松和政、元垣内敦司
    • Publisher
      (株)オーム社
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy2018

    • Author(s)
      Yoshizawa, R; Miyake, H; Hiramatsu, K
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: 57 Issue: 1S Pages: 01AD05-01AD05

    • DOI

      10.7567/jjap.57.01ad05

    • NAID

      210000148548

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-15H03556
  • [Journal Article] 一次元金属回折格子を用いた表面プラズモンセンサーの周期及び入射角度依存性と感度特性2017

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Journal Title

      電子情報通信学会技術研究報告(電磁界理論)

      Volume: 116 Pages: 13-18

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Journal Article] Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure2017

    • Author(s)
      Atsushi Motogaito, Tomoyasu Nakajima, Hideto Miyake and Hiramatsu Kazumasa
    • Journal Title

      Applied Physics A

      Volume: 123 Issue: 12 Pages: 729-729

    • DOI

      10.1007/s00339-017-1367-6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Journal Article] Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns2017

    • Author(s)
      Okada, S; Iwai, H; Miyake, H; Hiramatsu, K
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: 56 Issue: 12 Pages: 125504-125504

    • DOI

      10.7567/jjap.56.125504

    • NAID

      210000148460

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-15H03556
  • [Journal Article] 表面プラズモンを用いたワイヤーグリッド偏光子の作製と偏光特性に関する研究2017

    • Author(s)
      中島智康、元垣内敦司、三宅秀人、平松和政
    • Journal Title

      電子情報通信学会技術研究報告(電磁界理論)

      Volume: 116 Pages: 19-22

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Journal Article] Au2次元回折格子構造における光学素子の作製と光学的特性評価2017

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Journal Title

      電子情報通信学会技術研究報告(電磁界理論)

      Volume: 116 Pages: 269-272

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Journal Article] Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates2017

    • Author(s)
      S. Okada, H. Iwai, H. Miyake, K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 印刷中 Pages: 851-855

    • DOI

      10.1016/j.jcrysgro.2016.12.011

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-16H06418, KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-15H03556
  • [Journal Article] Surface thermal stability of free-standing GaN substrates2016

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O Eryu and T. Hasegawa
    • Journal Title

      Japanese Journal Applied Physics

      Volume: 55 Issue: 1S Pages: 01AC08-01AC08

    • DOI

      10.7567/jjap.55.01ac08

    • NAID

      210000145956

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-16H06415
  • [Journal Article] Detecting High-Refractive-Index Media Using Surface Plasmon Sensor with One-Dimensional Metal Diffraction Grating2016

    • Author(s)
      Atsushi Motogaito, Shinya Mito, Hideto Miyake, Kazumasa Hiramatsu
    • Journal Title

      Optics and Photonics Journal

      Volume: 6 Issue: 07 Pages: 164-170

    • DOI

      10.4236/opj.2016.67018

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PROJECT-26390082
  • [Journal Article] Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions2016

    • Author(s)
      Chia-Hung Lin, Yasuhiro Yamashita, Hideto Miyakea, Kazumasa Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 印刷中 Pages: 845-850

    • DOI

      10.1016/j.jcrysgro.2016.09.076

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PLANNED-16H06415
  • [Journal Article] Relationship between space control and optical properties of a double-layer surface plasmon wire grid polariser2016

    • Author(s)
      T. Nakajima, A. Motogaito, H. Miyake, K. Hiramatsu
    • Journal Title

      Abstract of the 14th International Conference on Near-field Optics, Nanophotonics and Related Techniques

      Volume: - Pages: 227-227

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Journal Article] Detecting High-refractive-index (n> 1.5) Media using Surface Plasmon Sensor with One-Dimensional Au Diffraction Grating on Glass Substrate2016

    • Author(s)
      Atsushi Motogaito, Shinya Mito, Hideto Miyake, Kazumasa Hiramatsu
    • Journal Title

      Technical Dogest on Light, Energy and the Enviroment Congress

      Volume: - Pages: JW4A.42-JW4A.42

    • DOI

      10.1364/fts.2016.jw4a.42

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Journal Article] Annealing of an AlN buffer layer in N-2-CO for growth of a high-quality AlN film on sapphire2016

    • Author(s)
      H. Miyake, G. Nisho, S. Suzuki, K. Hiramatsu, H. Fukuyama, J. Kuar and N. Kuwano
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 2 Pages: 025501-025501

    • DOI

      10.7567/apex.9.025501

    • NAID

      210000137795

    • Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-16H06415
  • [Journal Article] Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN2016

    • Author(s)
      Chia-Hung Lin, Daiki Yasui, Shinya Tamaki, Hideto Miyake and Kazumasa Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FA12-05FA12

    • DOI

      10.7567/jjap.55.05fa12

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PLANNED-16H06415
  • [Journal Article] Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-μm-thick a-plane AlN films grown on r-plane sapphire substrates2016

    • Author(s)
      Chia-Hung Lin, Shinya Tamaki, Yasuhiro Yamashita, Hideto Miyake and Kazumasa Hiramatsu
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 8 Pages: 081001-081001

    • DOI

      10.7567/apex.9.081001

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PLANNED-16H06415
  • [Journal Article] Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing2016

    • Author(s)
      H. Miyake, C.-H. Lin, K. Tokoro, K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 456 Pages: 155-159

    • DOI

      10.1016/j.jcrysgro.2016.08.028

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-15H03556, KAKENHI-PLANNED-16H06415
  • [Journal Article] Extraordinary Optical Transmission Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid Polarizer2015

    • Author(s)
      A. Motogaito, Y. Morishita, H. Miyake and K. Hiramatsu
    • Journal Title

      Plasmonics

      Volume: 10 Issue: 6 Pages: 1657-1662

    • DOI

      10.1007/s11468-015-9980-8

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082, KAKENHI-PROJECT-15H03556
  • [Journal Article] Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application2015

    • Author(s)
      A. Motogaito, M. Kito, H. Miyake and K. Hiramatsu
    • Journal Title

      Proc.of SPIE Micro+Nano Materials, Devices, and Systems

      Volume: 9668 Pages: 96681Q-96681Q

    • DOI

      10.1117/12.2201116

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082, KAKENHI-PROJECT-15H03556
  • [Journal Article] Detection of High-Refractive Index Media by a Surface Plasmon Sensor Using a One-Dimensional Metal Diffraction Grating2015

    • Author(s)
      S. Mito, A. Motogaito, H. Miyake and K. Hiramatsu
    • Journal Title

      Technical Digest on 20th Microoptics Conference (MOC’15)

      Volume: - Pages: 126-127

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Journal Article] Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template2015

    • Author(s)
      D.Khan, S.Takeuchi, Y.Nakamura, K.Nakamura, T.Arauchi, H.Miyake, K.Hiramatsu, Y.Imai, S.Kimura, A.Sakai
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 411 Pages: 38-41

    • DOI

      10.1016/j.jcrysgro.2014.10.052

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media2015

    • Author(s)
      A. Motogaito, S. Nakamura, J. Miyazaki, H. Miyake and K. Hiramatsu
    • Journal Title

      Optics Communications

      Volume: 341 Pages: 64-68

    • DOI

      10.1016/j.optcom.2014.12.006

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25600090, KAKENHI-PROJECT-26390082
  • [Journal Article] MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer2014

    • Author(s)
      M. Katagiri, H. Fang, H. Miyake, K. Hiramatsu, H. Oku, H. Asanuma and K. Kawamura
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FL09-05FL09

    • DOI

      10.7567/jjap.53.05fl09

    • NAID

      210000143869

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-25600090
  • [Journal Article] Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures2014

    • Author(s)
      P.Lefebvre, C. Brimont, P.Valvin, B. Gil, H.Miyake, K.Hiramatsu
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 211 Issue: 4 Pages: 765-768

    • DOI

      10.1002/pssa.201300505

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] High quality GaN grown by using maskless epitaxial lateral overgrowthon Si substrate with thin SiC intermediate layer2014

    • Author(s)
      H Fang, M Katagiri, H Miyake, K Hiramatsu, H Oku, H Asamura, and K Kawamura
    • Journal Title

      Pbysica status solidi (a)

      Volume: (印刷中) Issue: 4 Pages: 744-747

    • DOI

      10.1002/pssa.201300443

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01357, KAKENHI-PROJECT-24360008
  • [Journal Article] Selective-area growth of GaN on non- and semi-polar bulk GaN substrates2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, Y. Enatsu and S. Nagao
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FL04-05FL04

    • DOI

      10.7567/jjap.53.05fl04

    • NAID

      210000143864

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency2014

    • Author(s)
      S.Kurai, K.Anai, H.Miyake, K.Hiramatsu, Y.Yamada
    • Journal Title

      JOURNAL OF APPLIED PHYSICS

      Volume: 116 Issue: 23 Pages: 235703-235703

    • DOI

      10.1063/1.4904847

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420288, KAKENHI-PROJECT-25420289
  • [Journal Article] High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy2014

    • Author(s)
      S. Kitagawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FL03-05FL03

    • DOI

      10.7567/jjap.53.05fl03

    • NAID

      210000143863

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25600090
  • [Journal Article] Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants ― With results for AlN optical constants2014

    • Author(s)
      T.Saito, K.Ozaki, K.Fukui,H.Iwai,K.Yamamoto,H.Miyake, K.Hiramatsu
    • Journal Title

      Thin Solid Films

      Volume: 559 Pages: 517-521

    • DOI

      10.1016/j.tsf.2014.02.099

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560006, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25410006
  • [Journal Article] Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template2014

    • Author(s)
      T.Arauchi, S.Takeuchi, K.Nakamura, K.Dinh, Y.Nakamura, H.Miyake, K.Hiramatsu, A. Sakai
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 211 Issue: 4 Pages: 731-735

    • DOI

      10.1002/pssa.201300461

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Effect of SiC Intermediate Layer Properties in Epitaxy of GaN on 3C-SiC/Si Substrates2014

    • Author(s)
      H Fang, M Katagiri, H Miyake, K Hiramatsu, H Oku, H Asamura, and K Kawamura
    • Journal Title

      Joumal of Applied Physics

      Volume: 115 Issue: 6

    • DOI

      10.1063/1.4864780

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01357, KAKENHI-PROJECT-24360008
  • [Journal Article] Binding energy of localized biexcitons in AlGaN-based quantum wells2014

    • Author(s)
      Y.Hayakawa, T.Fukuno, K.Nakamura, H.Miyake, K.Hiramatsu, Y.Yamada
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 7 Issue: 12 Pages: 122101-122101

    • DOI

      10.7567/apex.7.122101

    • NAID

      210000137325

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420289
  • [Journal Article] Selective Area Growth of Semipolar (20-21) and (20-2-1) GaN substrates by Metalorganic Vapor Phase Epitaxy2013

    • Author(s)
      Daiki Jinno, Bei Ma, Hideto Miyake, Kazumasa Hiramatsu, Yuuki Enatsu, and Satoru Nagao
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JC06-08JC06

    • DOI

      10.7567/jjap.52.08jc06

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Journal Article] Study on the Chemical Sensor Using Excitation of the Surface Plasmon Polariton with the GaP-Au Contact2013

    • Author(s)
      Shohei Nakamura,Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Journal Title

      Proc. JSAP-OSA Symposia 2013

      Volume: なし

    • Data Source
      KAKENHI-PROJECT-25600090
  • [Journal Article] Effects of Si doping in high-quality AIN grown by MOVPE on trench-patterned template2013

    • Author(s)
      G. Nishio, Y. Shibo, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 370 Pages: 74-77

    • DOI

      10.1016/j.jcrysgro.2012.10.038

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources2013

    • Author(s)
      F. Fukuyo, S. Ochiai, H. Miyake, K. Hiramatsu, H. Yoshida and Y. Kobayashi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 1S Pages: 01AF03-01AF03

    • DOI

      10.7567/jjap.52.01af03

    • NAID

      210000141776

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy2013

    • Author(s)
      S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu,K. Hiramatsu, A. Uedono
    • Journal Title

      Journal of Applied Physics

      Volume: 113 Issue: 21 Pages: 2135061-6

    • DOI

      10.1063/1.4807906

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-24560010
  • [Journal Article] The Excitation of the Surface Plasmon Polariton with the GaP-Au Contact and Application to Chemical Sensors2013

    • Author(s)
      S. Nakamura, A. Motogaito, H. Miyake, and K. Hiramatsu
    • Journal Title

      Technical digest on 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

      Volume: なし

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Journal Article] Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy2013

    • Author(s)
      S. Kurai, F. Ushijima, Y. Yamada, H. Miyake, K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JL07-08JL07

    • DOI

      10.7567/jjap.52.08jl07

    • NAID

      210000142732

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420288
  • [Journal Article] Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration2013

    • Author(s)
      S. Kurai, F. Ushijima, H. Miyake, K. Hiramatsu, Y. Yamada
    • Journal Title

      Journal of Applied Physics

      Volume: 115 Issue: 5 Pages: 53509-53509

    • DOI

      10.1063/1.4864020

    • NAID

      120006364143

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420288, KAKENHI-PROJECT-25420289
  • [Journal Article] Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources2013

    • Author(s)
      Fumitsugu Fukuyo, Shunsuke Ochiai, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, and Yuji Kobayashi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52

    • NAID

      210000141776

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Journal Article] AlN Grown on a- and n-Plane Sapphire Substrates:by Low-Pressure Hydride Vapor Phase Epitaxy2013

    • Author(s)
      Naoki Goriki, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito, and Osamu Eryu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JB31-08JB31

    • DOI

      10.7567/jjap.52.08jb31

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25600090
  • [Journal Article] Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template2013

    • Author(s)
      D.T. Khan, S. Takeuchi, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, A. Sakai
    • Journal Title

      Journal of Crystal Growth

      Volume: 381 Pages: 37-42

    • DOI

      10.1016/j.jcrysgro.2013.07.012

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Journal Article] AIN homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE2012

    • Author(s)
      T. Nomura, K. Okumura, H. Miyake, K. Hiramatsu, O. Eryu and Y. Yamada
    • Journal Title

      Journal of Crystal Growth

      Volume: 350 Issue: 1 Pages: 69-71

    • DOI

      10.1016/j.jcrysgro.2011.12.025

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Journal Article] Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substratesr2012

    • Author(s)
      B. Ma, D. Jinno, H. Miyake, K. Hiramatsu and H. Harima
    • Journal Title

      Applied Physics Letters

      Volume: 100

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2012

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Phys.Status Solidi

      Volume: vol.9 Issue: 3-4 Pages: 576-579

    • DOI

      10.1002/pssc.201100797

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J10845, KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014
  • [Journal Article] Effects of carrier gas and growth temperature on MOVPE growth of AlN2012

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, H.Hiramatsu
    • Journal Title

      Phys.Status Solidi

      Volume: vol.9 Issue: 3-4 Pages: 499-502

    • DOI

      10.1002/pssc.201100712

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J10845, KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014
  • [Journal Article] Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates2012

    • Author(s)
      Bei Ma, Daiki Jinno, Hideto Miyake, Kazumasa Hiramatsu, Hiroshi Harima
    • Journal Title

      Applied Physics Letters

      Volume: 100 Issue: 1

    • DOI

      10.1063/1.3674983

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-10J08374, KAKENHI-PROJECT-21360007
  • [Journal Article] Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate2012

    • Author(s)
      R. Miyagawa, S. Yang, H. Miyake, K. Hiramatsu, T. Kuwahara, M. Mitsuhara and N. Kuwano
    • Journal Title

      Applied Physics Express

      Volume: 5

    • NAID

      10030155844

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Microstructure of AlN grown on a nucleation layer on sapphire substrate2012

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu, T.Kuwahara, M.Mitsuhara, N.Kuwano
    • Journal Title

      Appl.Phys.Express

      Volume: Volime 5 No.2 Issue: 2 Pages: 025501-025501

    • DOI

      10.1143/apex.5.025501

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J10845, KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014, KAKENHI-PROJECT-21651054
  • [Journal Article] Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template2012

    • Author(s)
      G. Nishio, S. Yang, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 370 Pages: 74-77

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Journal Article] Interaction of the dual effects triggered by A1N interlayers in thick GaN grown on 3C-SiC/Si substrates2012

    • Author(s)
      H Fang, Y Takaya, H Miyake, K Hiramatsu, H Asamura, K Kawamura
    • Journal Title

      Journal of Physics D : Applied Physics

      Volume: 45 Issue: 38 Pages: 385101-385101

    • DOI

      10.1088/0022-3727/45/38/385101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01357, KAKENHI-PROJECT-24360008
  • [Journal Article] Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN2011

    • Author(s)
      Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka, H. Yoshida
    • Journal Title

      Applied Physics Express

      Volume: 4 Pages: 421031-3

    • NAID

      10028209557

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] HVPE growth of thick AlN on trench-patterned substrate2011

    • Author(s)
      K. Fujita, K. Okuura, H. Miyake, K. Hiramatsu and H. Hirayama
    • Journal Title

      Physica Status Solidi

      Volume: 8 Pages: 1483-1486

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Stress analysis of a-plane GaN grown on r-plane sapphire substrate2011

    • Author(s)
      B. Ma, H. Miyake, K. Hiramatsu and H. Harima
    • Journal Title

      Physica Status Solidi(c)

      Volume: 8 Pages: 2066-2068

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy2011

    • Author(s)
      Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and Y. Shimahara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 50

    • NAID

      40019010401

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN2011

    • Author(s)
      Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and Y. Shimahara
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028209557

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c)

      Volume: 8 Issue: 7-8 Pages: 2069-2071

    • DOI

      10.1002/pssc.201001186

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014
  • [Journal Article] Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer2011

    • Author(s)
      H.Fang, Y.Takaya, S.Ohuchi, H.Miyake, K.Hiramatsu, H.Asamura, K.Kawamura
    • Journal Title

      physica status solidi (c)

      Volume: 9 Issue: 3-4 Pages: 550-553

    • DOI

      10.1002/pssc.201100332

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01357, KAKENHI-PROJECT-21360007
  • [Journal Article] aman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express 4

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN2011

    • Author(s)
      Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, Y.Shimahara
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 4 Issue: 4 Pages: 042103-042103

    • DOI

      10.1143/apex.4.042103

    • NAID

      10028209557

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Stress analysis of a-plane GaN grown on r-plane sapphire substrates2011

    • Author(s)
      Bei Ma, Hideto Miyake, Kazumasa Hiramatsu, Hiroshi Harima
    • Journal Title

      physica status solidi (c)

      Volume: 8 Issue: 7-8 Pages: 2066-2068

    • DOI

      10.1002/pssc.201001166

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-10J08374, KAKENHI-PROJECT-21360007
  • [Journal Article] Huge binding energy of localized biexcitons in Al-rich Al_xGa_<1-x>N2011

    • Author(s)
      R.Kittaka, H.Muto, H.Murotani, Y.Yamada, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] HVPE grown thick ALN on trench-patterned substrate2011

    • Author(s)
      K. Fujita, K. Okuura, H. Miyake, K. Hiramatsu and H. Hirayama
    • Journal Title

      Physica Status Solidi(c)

      Volume: 8 Pages: 1483-1486

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] HVPE growth of AlN on trench-patterned 6H-SiC substrates2011

    • Author(s)
      K. Okumura, T. Nomura, H. Miyake, K. Hiramatsu and O. Eryuu
    • Journal Title

      Physica Status Solidi

      Volume: 8 Pages: 467-469

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Huge binding energy of localized biexcitons in Al-rich Al_xGa_<1-x>N2011

    • Author(s)
      R.Kittaka, H.Muto, H.Murotani, Y.Yamada, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S. Yang, R. Miyagawa, H. Miyake, K. Hiramatsu, and H. Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] HVPE grown thick ALN on trench-patterned substrate2011

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, H.Hirayama
    • Journal Title

      Physica Status Solidi (c)

      Volume: 8 Issue: 5 Pages: 1483-1486

    • DOI

      10.1002/pssc.201001130

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014
  • [Journal Article] Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy2011

    • Author(s)
      Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, Y.Shimahara
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: 50 Issue: 9R Pages: 095502-095502

    • DOI

      10.1143/jjap.50.095502

    • NAID

      40019010401

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R. Miyagawa, S. Yang, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c)

      Volume: 8 Pages: 2069-2071

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Enhanced deep ultraviolet emission from Si-doped Al_xGa_<1-x>N/AlN MQWs2010

    • Author(s)
      D.Li, W.Hu, H.Miyake, K.Hiramatsu, H.Song
    • Journal Title

      Chinese Physics B

      Volume: 19

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Fabrication and characterization of binary diffractive lens with the 100μm-order-focal length2010

    • Author(s)
      A. Motogaito, K. Arakawa, Y. Nakayama, H. Miyake and K. Hiramatsu
    • Journal Title

      Technical Digest of the 16th Microoptics Conference

      Pages: 207-208

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Facet control in selective area growth(SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      B. Ma, R. Miyagawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Facet control in selective area growth (SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      B.Ma, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Facet control in selective area growth (SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      B.Ma, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions2010

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics 49

    • NAID

      40017033737

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Facet control in selective area growth (SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      .Ma, R.Miyagawa, H.Miyake , K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R. Miyagawa, J. Wu, H. Miyake and K. Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M.Narukawa, H.Asamura, K.Kawamura, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M. Narukawa, H. Asamura, K. Kawamura, H. Miyake and K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions2010

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics 49

    • NAID

      40017033737

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M. Narukawa, H. Asamura, K. Kawamura, H. Miyake and K. Hiramatsu
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M.Narukawa, H.Asamura, K.Kawamura, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions2010

    • Author(s)
      W. Hu, B. Ma, D. Li, R. Miyagawa, H. Miyake, and K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • NAID

      40017033737

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M.Narukawa, H.Asamura, K.Kawamura, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R. Miyagawa, J. Wu, H. Miyake and K. Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Deep Electronic Levels of Al_xGa_<1-x>N with a Wide Range of Al Composition Grown by Metal-Organic Vapor Phase Epitaxy2010

    • Author(s)
      K.Ooyama, K.Sugawara, S.Okuzaki, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 3801-3805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y.Katagiri, S.Kishino, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2831-2833

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Influence ofoff-cutangleof r-plane sapphireonthecrystalqualityof nonpolar a-plane AlNbyLP-HVPE2009

    • Author(s)
      J.Wu, K.Okuura, K.Fujita, K.Okumura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 4473-4477

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 3801-3805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J.Wu, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Express 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE2009

    • Author(s)
      B.Ma, R.Miyagawa, W.Hu, D.Li, H.Miyake,K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2899-2902

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Influence of off-cutangle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE2009

    • Author(s)
      J. Wu, K. Okuura, K. Fujita, K. Okumura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 4473-4477

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on rplane sapphire by MOVPE2009

    • Author(s)
      B.Ma, R.Miyagawa, W.Hu, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2899-2902

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires2009

    • Author(s)
      M.Narukawa, S.Koide, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2970-2972

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] In-plane electric field induced by polarization and lateral photovoltalic effect in a-plane GaN2009

    • Author(s)
      W. Hu, B. Ma, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 94

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 3801-3805

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE2009

    • Author(s)
      B. Ma, R. Miyagawa, W. Hu, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2899-2902

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 3801-3805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy2009

    • Author(s)
      B. Ma, W. Hu, H. Miyake and K. Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 95

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] In-plane electric field induced by polarization and lateral photovoltalic effect in a-plane GaN2009

    • Author(s)
      W.Hu, B.Ma, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 94

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J. Wu, K. Okuura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Applied Physics Express

      Volume: 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Influence ofoff-cutangleof r-plane sapphireonthecrystalqualityof nonpolar a-plane AlNbyLP-HVPE2009

    • Author(s)
      J.Wu, K.Okuura, K.Fujita, K.Okumura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 4473-4477

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J. Wu, K. Okuura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Applied Physics Express

      Volume: 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires2009

    • Author(s)
      M.Narukawa, S.Koide, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2970-2972

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J.Wu, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Express 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c)

      Volume: 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] In-plane electric field induced by polarization and lateral photovoltalic effect in a-plane GaN2009

    • Author(s)
      W.Hu, B.Ma, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 94

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE2009

    • Author(s)
      J. Wu, K. Okuura, K. Fujita, K. Okumura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 4473-4477

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Photoluminesence study of Si-doped a-plane GaN grown by MOVPE2009

    • Author(s)
      D.Li, B.Ma, R.Miyagawa, M.Narukawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2906-2909

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE2009

    • Author(s)
      B.Ma, R.Miyagawa, W.Hu, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2899-2902

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy2009

    • Author(s)
      B.Ma, W.Hu, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 95

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article]2009

    • Author(s)
      平松和政, 元垣内敦司, 他4名
    • Journal Title

      新インターユニバーシティ 半導体工学((株) オーム社)

      Pages: 1-46

    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c)

      Volume: 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Optical properties of MOVPE-grown a-plane GaN and AlGaN2009

    • Author(s)
      M. Narukawa, R. Miyagawa, B. Ma, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2903-2905

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y.Katagiri, S.Kishino, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2831-2833

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y. Katagiri, S. Kishino, K. Okuura, H. Miyake and K. Hiramatsu
    • Volume
      311
    • Pages
      2831-2833
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Photoluminesence study of Si-doped a-plane GaN grown by MOVPE2009

    • Author(s)
      D. Li, B. Ma, R. Miyagawa, M. Narukawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2906-2909

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Photoluminesence study of Si-doped a-plane GaN grown by MOVPE2009

    • Author(s)
      D.Li, B.Ma, R.Miyagawa, M.Narukawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2906-2909

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y. Katagiri, S. Kishino, K. Okuura, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2831-2833

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) 6

      Pages: 5478-5481

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J.Wu, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Express 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Optical properties of MOVPE-grown a-plane GaN and AlGaN2009

    • Author(s)
      M.Narukawa, R.Miyagawa, B.Ma, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2903-2905

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires2009

    • Author(s)
      M. Narukawa, S. Koide, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2970-2972

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy2009

    • Author(s)
      B.Ma, W.Hu, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 95

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Optical properties of MOVPE-grown a-plane GaN and AlGaN2009

    • Author(s)
      M.Narukawa, R.Miyagawa, B.Ma, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2903-2905

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Reactor-pres sure dependence of growthof a-plane Ga N on r-plane sapphire2008

    • Author(s)
      R. Miyagawa, M. Narukawa, B. Ma, H. Miyake and K. Hiramatsu.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Gro wth of crack-free AlGaN ons elective-area-growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et.al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer2008

    • Author(s)
      D.Li, M.Aoki, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Selective Area Growth of III-Nitride and Their Application for Emitting Devices2008

    • Author(s)
      K. Hiramatsu, H. Miyake, D. Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Improved optical properties of AlGaN using periodic structures2008

    • Author(s)
      H.Miyake, T. Ishii, A. Motogaito and K.Hiramatsu
    • Journal Title

      Physica Status Solidi c 5

      Pages: 1822-1824

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire2008

    • Author(s)
      R. Miyagawa, M. Narukawa, B. Ma, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Gro wth of crack-free AlGaN ons elective-are a-growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of crack-free AlGaN ons elective-area-growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu, et al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective Area Growth of III-Nitride and Their Application for Emitting Devices2008

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Improved optical properties of AlGaN using periodic structures2008

    • Author(s)
      H. Miyake, T. Ishii, A. Motogaito, K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1822-1824

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer2008

    • Author(s)
      D. Li, M. Aoki, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2008

    • Author(s)
      K.Hiramatsu, H.Miyake, D.Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperaturl A1N buffer layer2008

    • Author(s)
      D. Li, M. Aoki, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi c 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity2008

    • Author(s)
      A. Motogaito, K. Manabe, Y. Yamanaka, N. Machida, H. Miyake, K. Hiramatsu
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 218-221

    • NAID

      110006663916

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III -nitride and their application for emitting devices2008

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia2008

    • Author(s)
      Y. Liu, S.Koide, H.Miyake, K.Hiramatsu, et.al.
    • Journal Title

      Physica Status Solidi c 5

      Pages: 1522-1524

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Reactor-pressure dependence of growthof a-plane GaN on r-plane sapphire2008

    • Author(s)
      R. Miyagawa, M. Narukawa, B. Ma, H. Miyake, K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Growth of crack-free AlGaN ons elective-area-growth GaN2008

    • Author(s)
      H. Miyake, N.Masuda, Y. Ogawahara, M. Narukawa, K.Hiramatsu, et.al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer2008

    • Author(s)
      D. Li, M. Aoki, H. Miyake, K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Thermal analys is of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia2008

    • Author(s)
      Y. Liu, S. Koide, H. Miyake, K. Hiramatsu, et al.
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1522-1524

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Growth of crack-free AlGaN ons elective-area-growth GaN2008

    • Author(s)
      H.Miyake, N.Masuda, Y.Ogawahara, M.Narukawa, K.Hiramatsu, et al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Improved optical properties of AlGaN using periodic structures2008

    • Author(s)
      H.Miyake, T.Ishii, A.Motogaito and K.Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1822-1824

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Reactor-pressure dependence of growthof a-plane GaN on r-plane sapphire2008

    • Author(s)
      R.Miyagawa, M.Narukawa, B.Ma, H.Miyake, K.Hiramatsu.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Reactor-pres sure dependence of growthof a-plane Ga N on r-plane sapphire2008

    • Author(s)
      R. Miyagawa, M. Narukawa, B. Ma, H. Miyake and K. Hiramatsu.
    • Journal Title

      Journal of Cryst al Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Optical characterization of Japanese papers for application in the LED lighting system with human sensitivity2008

    • Author(s)
      A.Motogaito, K.Manabe, Y.Yamanaka, N.Machida, H.Miyake and K.Hiramatsu
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 218-221

    • NAID

      110006663916

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer2008

    • Author(s)
      D. Li, M. Aoki, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2008

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia2008

    • Author(s)
      Y. Liu, S. Koide, H. Miyake, K. Hiramatsu, et.al.
    • Journal Title

      Physica Status Solidi(c) 5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] High temperature growth of AIN film by LP-HVPE2007

    • Author(s)
      K. Tsujisawa, S. Kishino, Y.H. Liu, H.Miyake, K. Hiramatsu, T. shibata, M. tanaka
    • Journal Title

      Physica Status Solidi (c)4,(7)

      Pages: 2252-2255

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H. Miyake, K. Nakao and K. Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] High temperature growth of AIN film by LP-HVPE2007

    • Author(s)
      K.Tsujisawa, S.Kishino, Y.H.Liu, H.Miyake, K.Hiramatsu, et. al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2252-2255

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H. Miyake, K. Nakao and K. Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Dependence of In mole fraction in InGaN on GaN facets2007

    • Author(s)
      K. Nakao, D. Li, Y. Liu, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2383-2386

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of HI-nitride and their application for emitting devices2007

    • Author(s)
      K. Hiramatsu, H. Miyake, D. Li
    • Journal Title

      Proc. 1st International Confernce on White LEDs and Solid State Lighting

      Pages: 72-77

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of crack generation using high-compressivestrain AIN/Sapphire template for hydride vapor phase epitaxy of thick AIN film2007

    • Author(s)
      K.Tsujisawa, S.Kishino, D.Li, H.Miyake, K.Hiramatsu, et. al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Supression of crack generation using high・compressive-strain AIN/Sapphire template for hydride vapor phase epitaxy of thick AIN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miyake, K. Hiramatsu, et. al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Optical characterization of Japanese papers for application to theLEDlightning system wit hhuman sensitivity2007

    • Author(s)
      A.Motogaito, K.Manabe, Y.Yamanaka, N.Machida, H.Miyake and K.Hiramatsu
    • Journal Title

      Proc.1st International Confernce on White LEDsand Solid State Lighting

      Pages: 440-443

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H. Miyake, K. Nakao and K. Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H.Miyake, K.Nakao, K.Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures" Superlattices and Microstructures2007

    • Author(s)
      H. Miyake, K. Nakao, K. Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of crack generation using high-compressive-strain AIN/Sapphire template for hydride vapor phase epitaxy of thick MN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miyake, K. Hiramatsu, T. Shibata, M. Tanaka
    • Journal Title

      Japanese Journal of Applied Physics 46,(23)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of crack generation using high-compressive-strain AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miyake, K. Hiramatsu, et. al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Influence of growth conditions on Al incorporation to Al_xGa_<1-x>N (x>0.4) grown by MOVPE2007

    • Author(s)
      D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 372-374

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2007

    • Author(s)
      K.Hiramatsu, H.Miyake and D.Li
    • Journal Title

      Proc.1st International Confernce on White LEDs and Solid State Lighting

      Pages: 72-77

    • NAID

      110006663908

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN multiple quantum wells2007

    • Author(s)
      D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 500-503

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of crack generation using high-compressive-s train AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miya ke, K. Hiramatsu et.al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Supression of crack generation using high-compressive-strain AIN/Sapphire template for hydride vapor phase epitaxy of thick AIN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miyake, K. Hiramatsu, et. al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] High temperaturegrowth of AlN film by LP-HVPE2007

    • Author(s)
      K.Tsujisawa, S.Kishino, Y.Liu, H.Miyake,K.Hiramatsu et.al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2252-2255

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2007

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Proc. 1st International Confernce on White LEDs and Solid State Lighting

      Pages: 72-77

    • NAID

      110006663908

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H.Miyake, K.Nakao andK.Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Synthesis of IIInitride microcrystals using metal-EDTA complexes2007

    • Author(s)
      Y.H.Liu, S.Koide, H.Miyake, K.Hiramatsu, et. al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2346-2349

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Structural and optical properties of Si-doped AIGaN/AIN multiple quantum wells grown by MOVPE2007

    • Author(s)
      D.Li, T.Katsuno, M.Aoko, H.Miyake, K.Hiramatsu, et. al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2494-2497

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Structural and optical properties of Si-doped AIGaN/AIN multiple quantum wells grown by MOVPE2007

    • Author(s)
      D. Li, T. Katsuno, M. Aoki, H. Miyake, K. Hiramatsu, T. Shibata
    • Journal Title

      Physica Status Solidi (c)4,(7)

      Pages: 2494-2497

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN multiple quantum wells2007

    • Author(s)
      D. Li, M. Aoki, T. Katsuno, H. Miyake, K.Hiramatsu and M. Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 500-503

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2007

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Proc. 1st International Confernce on White LEDs and Solid State Lighting

      Pages: 72-77

    • NAID

      110006663908

    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Influence of growth conditions on Al incorporation to Al_xGa_<1-x>N (x>0.4) grown by MOVPE2007

    • Author(s)
      D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 372-374

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE2007

    • Author(s)
      D. Li, T. Katsuno, M. Aoki, H. Miyake, K. Hiramatsu et.al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2494-2497

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN multiple quantum wells2007

    • Author(s)
      D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 500-503

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Dependence of In mole fraction in InGaN on GaN facets2007

    • Author(s)
      K. Nakao, D. Li, Y.H. Liu, H. Miyake, K. Hiramatsu
    • Journal Title

      Physica Status Solidi (c)4,(7)

      Pages: 2383-2386

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of c rack generation using high-compressive-s train AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miya ke, K. Hiramatsu et al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Supression of crack generation using high-compressive-strain AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film2007

    • Author(s)
      K.Tsujisawa, S.Kishino, D.Li, H.Miyake, K.Hiramatsu, et al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Fabrication of high-quality nitride semiconductors by facet control technique2006

    • Author(s)
      H.Miyake, K.Hiramatsu
    • Journal Title

      OYO BUTURI (in Japanese) Vol.75, No.48

      Pages: 467-472

    • NAID

      10017541097

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrate2005

    • Author(s)
      Y.Shibata, A.Motogaito, H.Miyake, K.Hiramatsu, Y.Ohuchi, H.Okagawa, K.Tadatomo, T.Nomura, Y.Hamamura, K.Fukui
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 831

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer2005

    • Author(s)
      A.Ishiga, T.Onishi, Y.LIU, M.Haraguchi, N.Kuwano, T.Shibata, M.Tanaka, H.Miyake, K.Hiramatsu
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 831

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Freestanding GaN substrate by Advanced FACELO Technique with Masking Side-facets2005

    • Author(s)
      Shinya Bohyama, Hideto Miyake, Kazumasa Hiramatsu, Yoshihiko Tsuchida, Takayoshi Maeda
    • Journal Title

      Japan Journal of Applied Physics 44

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360-10nm) using Synchrotron Radiation2004

    • Author(s)
      A.Motogaito, K.Hiramatsu, Y.Shibata, H.Watanabe, H.Miyake, K.Fukui, Y.Ohuchi, K.Tadatomo, Y.Hamamura
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 798

      Pages: 53-58

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] High temperature growth of AlN film by LP-HVPE

    • Author(s)
      K.Tsujisawa, S.Kishino, Y.Liu, H.Miyake, K.Hiramatsu, T.Shibata, M.Tanaka
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Blue Emission from InGaN/GaN Hexagonal Pyramid Structures

    • Author(s)
      H.Miyake, K.Nakao, K.Hiramatsu
    • Journal Title

      Superlattices and Microstructures (掲載決定)

    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Synthesis of III-nitride microcrystals using Metal-EDTA complexes

    • Author(s)
      Y.Liu, H.Miyake, K.Hiramatsu, K.Nakamura, N.Nambu
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Structural and electrical properties of Si-doped a-pl ane GaN grown on r-plane sapphire by MOVPE

    • Author(s)
      B. Ma, R. Miyagawa, W. Hu, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Dependence of In mole fraction in InGaN on GaN facets

    • Author(s)
      K.Nakao, D.Li, Y.Liu, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Low-Pressur e HVPE growth of crack free thick AlN on trench patterened AlN template

    • Author(s)
      Y. Katagiri, S. Kishino, K. Okuura, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Optical pro perties of MOVPE-grown a-plane GaN a nd AlGaN

    • Author(s)
      M. Narukawa, R. Miyagawa, B. Ma, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

    • Author(s)
      D. Li, B. Ma, R. Miyagawa, W. Hu, M. Narukawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Dependence of In mole fraction in InGaN on GaN facets

    • Author(s)
      K.Nakao, D.Li, Y.Liu, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE

    • Author(s)
      D.Li, T.Katsuno, M.Aoki, H.Miyake, K.Hiramatsu, T.Shibata
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] High temperature growth of AlN film by LP-HVPE

    • Author(s)
      K.Tsujisawa, S.Kishino, Y.Liu, H.Miyake, K.Hiramatsu, T.Shibata, M.Tanaka
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] High Quality AlGaN/AlN Superlattices grown on AlN/Sapphire Template by MOVPE

    • Author(s)
      Y.H.Liu, A.Ishiga, T.Ohnishi, H.Miyake, K.Hiramatsu, T.Shibata, M.Tanaka
    • Journal Title

      Compound Semiconductors (In press)

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Blue Emission from InGaN/GaN Hexagonal Pyramid Structures

    • Author(s)
      H.Miyake, K.Nakao, K.Hiramatsu
    • Journal Title

      Superlattices and Microstructures (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE

    • Author(s)
      D.Li, T.Katsuno, M.Aoki, H.Miyake, K.Hiramatsu, T.Shibata
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires

    • Author(s)
      M. Narukawa, S. Koide, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of C rystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Fabrication of a Binary Diffractive Lens for Controlling the Luminous Intensity Distribution of LED Light

    • Author(s)
      A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake, K. Hiramatsu
    • Journal Title

      Optical Review (掲載決定、印刷中)

    • NAID

      10025305178

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Patent] 光学装置の製造方法及び光学装置2014

    • Inventor(s)
      元垣内敦司、平松和政、森下雄太
    • Industrial Property Rights Holder
      国立大学法人三重大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-024746
    • Filing Date
      2014-02-12
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Patent] 半導体素子用エピタキシャル基板,半導体素子用エピタキシャル基板の作製方法,およびALN単結晶自立基板2012

    • Inventor(s)
      三宅秀人,平松和政
    • Industrial Property Rights Holder
      国立大学法人三重大学
    • Industrial Property Number
      2012-129102
    • Filing Date
      2012-06-06
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 二層型ワイヤーグリッド構造における伝搬型表面プラズモンの伝搬特性に関する研究2018

    • Author(s)
      渡邊直也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 焦点制御型回折レンズの作製と集光特性評2018

    • Author(s)
      加藤 亮、元垣内 敦司、三宅秀人、平松和政
    • Organizer
      平成30年度照明学会東海支部若手セミナー
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Agワイヤーグリッド構造を用いたプラズモニック波長板の作製に関する研究2018

    • Author(s)
      渡邊 陽生、元垣内 敦司、三宅秀人、平松和政
    • Organizer
      平成30年度照明学会東海支部若手セミナー
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの作製及び感度評価2018

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Au 2次元回折格子構造による光学素子の作製と光学特性評価2017

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Place of Presentation
      伊勢市民観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] nvestigation of the sputtered AlN films qualitative improvement process by high- temperature annealing2017

    • Author(s)
      Shi-yu Xiao, Yi-kang Liu, Hideto Miyake, Kazumasa Hiramatsu, Shunta Harada, Toru Ujihara
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 表面プラズモンを用いたワイヤーグリッド偏光子の作製と偏光特性に関する研究2017

    • Author(s)
      中島智康、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Place of Presentation
      伊勢市観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Abrupt polarity inversion of AlN for second harmonics generation in DUV region2017

    • Author(s)
      Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito, Ryuji Katayama
    • Organizer
      International Workshop of UV Materials and Devices 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06418
  • [Presentation] スパッタ法を用いたサファイア基板上へのAlN 堆積2017

    • Author(s)
      山木佑太,岩山章, 三宅秀人, 平松 和政, 小松永治,寺山暢之
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06418
  • [Presentation] 溝加工(10-10)GaN基板上へのGaN選択横方向成長2017

    • Author(s)
      岡田 俊祐、岩生 浩季、三宅 秀人、平松 和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] スパッタ法AlN基板へのMOVPE法によるホモ成長2017

    • Author(s)
      吉澤 涼、林 侑介、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] スパッタ法AlN膜の高温アニールとHVPE法によるホモエピ成長2017

    • Author(s)
      劉 怡康、三宅 秀人、平松 和政、岩谷 素顕、赤﨑 勇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Au2次元回折格子構造における光学素子の作製と光学的特性評価2017

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Place of Presentation
      伊勢市観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Fabrication of highly oriented c-plane AlN buffer layer by metalorganic vapor phase epitaxy on nucleation layer deposited by sputtering2017

    • Author(s)
      Ryo Yoshizawa, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      The 11th International Symposium on Semiconductor Light Emitting Devices 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06418
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの光学特性及び感度評価2017

    • Author(s)
      伊藤 優佑、元垣内 敦司、三宅 秀人、平松 和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] バイナリ構造を用いた焦点制御型回折レンズの作製と特性評価2017

    • Author(s)
      元垣内敦司、井口陽介、加藤秀治、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Study of curvature during thermal annealing of AlN on sapphire2017

    • Author(s)
      Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Investigation of high-temperature annealing process of sputtered AlN films2017

    • Author(s)
      Shiyu Xiao, Ryoya Suzuki, Hideto Miyake, Kazumasa Hiramatsu, Shunta Harada, Toru Ujihara
    • Organizer
      International Workshop on UV Materials and Devices 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06418
  • [Presentation] Role of oxygen atoms on polarity inversion of N-polar AlN buffer layers: A first-principles theory2017

    • Author(s)
      Motoshi Uchino, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06418
  • [Presentation] Fabrication and characterization of a binary diffractive lens for controlling the focal length and depth of focus2017

    • Author(s)
      Atsushi Motogaito, Yousuke Iguchi, Shuji Kato, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 22nd Microoptics Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Agを用いた二層型ワイヤーグリッド構造の周期と波長の依存性2017

    • Author(s)
      渡邊直也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] The Sensor Characteristics of Surface Plasmon Sensor using the 1D Metal Diffraction Grating2017

    • Author(s)
      Yusuke Ito, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 11th Asia-Pacific Conference on Near Field Optics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Effect of Thermal Annealing on AlN Films Grown on Sputtered AlN Templates2017

    • Author(s)
      Ryo Yoshizawa, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      中部大学(愛知県・春日井市)
    • Year and Date
      2017-03-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] スパッタ法で成膜したr面サファイア基板上a面AlNの高品質化2017

    • Author(s)
      福田 涼、山木 佑太、林 侑介、三宅 秀人、平松 和政
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Face to Face 高温アニールで生じるAlN膜内歪の定量的評価2017

    • Author(s)
      谷川健太朗、鈴木涼矢、岩山章、林侑 介、三宅秀人、平松和政
    • Organizer
      第46回結晶成長国内会議
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの周期及び入射角度依存性と感度特性2017

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Place of Presentation
      伊勢市観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Ab initio approach to polarity inversion of AlN caused by oxygen atoms2017

    • Author(s)
      Motoshi Uchino, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      International Conference on Materials and Systems for Sustainability
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06418
  • [Presentation] The study of high-temperature annealing process of sputtered AlN films2017

    • Author(s)
      S. Xiao, Y. Liu, H. Miyake, K. Hiramatsu, S. Harada, and T. Ujihara
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] MOVPE法によるAlN膜のface-to-faceアニール2017

    • Author(s)
      田中 襲一、岡田 俊祐、林 侑介、三宅 秀人、平松 和政
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Agを用いた二層型ワイヤーグリッド構造の入射角度依存性2017

    • Author(s)
      渡邊 直也、元垣内 敦司、三宅 秀人、平松 和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Effect of thermal annealing on AlN films grown on sputtered AlN templates2017

    • Author(s)
      R. Yoshizawa, H. Miyake, and K. Hiramatsu
    • Organizer
      ISPlasma2017 / IC-PLANTS2017
    • Place of Presentation
      中部大学(愛知県・春日井市)
    • Year and Date
      2017-03-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06418
  • [Presentation] Face to Face法アニールによる AlN極性反転構造の作製と疑似位相整合 SHGへの応用2017

    • Author(s)
      林 侑介、三宅秀人、平松和政、秋山 亨、伊藤智徳、片山竜二
    • Organizer
      電子情報通信学会 電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017

    • Author(s)
      林 侑介、三宅 秀人、平松 和政、片山 竜二
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] スパッタ法AlN膜の高温アニールとHVPE法によるホモエピ成長2017

    • Author(s)
      劉怡康,三宅秀人,平松和政, 岩谷素顕, 赤﨑勇
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06418
  • [Presentation] スパッタ法を用いたサファイア基板上へのAlN堆積2017

    • Author(s)
      山木 佑太、岩山 章、三宅 秀人、平松 和政、小松 永治、寺山 暢之
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] MOVPE法によるAlN成長における窒化温度の影響2017

    • Author(s)
      河合 祥也、三宅 秀人、平松 和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 溝加工(10-10)GaN基板上へのGaN選択横方向成長2017

    • Author(s)
      岡田俊祐,岩生 浩季,三宅秀人,平松和政
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06418
  • [Presentation] 表面プラズモンを用いたワイヤーグリッド偏光子の偏光特性評価に関する研究2017

    • Author(s)
      中嶋智康、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Place of Presentation
      伊勢市民観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの 周期及び入射角度依存性と感度特性2017

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Place of Presentation
      伊勢市民観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの光学特性及び感度評価2017

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Excitation Mechanism of Surface Plasmon Polaritons in a Double-Layer Wire Grid Structure2017

    • Author(s)
      Atsushi Motogaito, Tomoyasu Nakajima, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 11th Asia-Pacific Conference on Near Field Optics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Agを用いた二層型ワイヤーグリッド構造の入射角度依存性2017

    • Author(s)
      渡邊直哉、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの感度評価2017

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Face to Face アニールによる AlN 分極反転構造の作製と評価2017

    • Author(s)
      林 侑介、三宅 秀人、 平松 和政、 片山 竜二
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの光学特性評価2016

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会ナノオプティクス研究グループ 第23回研究討論会
    • Place of Presentation
      大阪大学吹田キャンパス(大阪府・吹田市)
    • Year and Date
      2016-11-28
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] The controlling of transmittance and reflectance of a 2D metal periodic grating structure for cold filter application2016

    • Author(s)
      Atsushi Motogaito, Masanori Kito, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      JSAP-OSA Joint Symposia
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] The Dependence of Surface Plasmon Sensor using 1D Metal Diffraction Grating on its Priod and the Incident Angle and Sensitivity Evaluation2016

    • Author(s)
      Yusuke Ito, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 6th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学(三重県・津市)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Effect of AlN Buffer Layer Thickness on Crystallinity and Surface Morphology of 10-μm-Thick A-Plane AlN Films Grown on R-Plane Sapphire Substrates2016

    • Author(s)
      Chia-Hung Lin, Shinya Tamaki, Yasuhiro Yamashita, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando (USA)
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Agを用いた二層型ワイヤーグリッド構造の光学特性評価2016

    • Author(s)
      渡邊直也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会ナノオプティクス研究グループ 第23回研究討論会
    • Place of Presentation
      大阪大学吹田キャンパス(大阪府・吹田市)
    • Year and Date
      2016-11-28
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Relationship between Space Control and Optical Properties of a Double-layer Surface Plasmon Wire Grid Polariser2016

    • Author(s)
      T. Nakajima, A. Motogaito, H. Miyake, K. Hiramatsu
    • Organizer
      The 14th International Conference on Near-field Optics, Nanophotonics, and Related Techniques
    • Place of Presentation
      アクトシティ浜松コングレスセンター(静岡県・浜松市)
    • Year and Date
      2016-09-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] r面サファイア上へのa面AlN成長におけるバッファ層厚さ依存性2016

    • Author(s)
      林 家弘、玉置 真哉、山下 泰弘、三宅 秀人、平松 和政
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Effect of buffer-layer growth temperature and thermal annealing conditions on a-plane AlN films grown on r-plane sapphire2016

    • Author(s)
      C.-H. Lin, Y. Yamashita, H. Miyake, K. Hiramatsu
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] サブ波長構造を有するAu2次元回折格子の作製と光学特性評価2016

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] r 面サファイア上への a 面 AlN 成長におけるバッファ層の成長温度およびバッファ層アニール条件依存性2016

    • Author(s)
      林 家弘 、山下 泰弘 、三宅 秀人、平松 和政
    • Organizer
      第8回 窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス ローム記念館(京都府・京都市)
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Growth of GaN on trench patterned non-polar bulk GaN substrates2016

    • Author(s)
      S. Okada, H. Iwai, H. Miyake, K. Hiramatsu
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Au2次元回折格子による光学ミラーの作製と光学特性評価2016

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス(東京都・文京区)
    • Year and Date
      2016-10-31
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] AlGaN多重量子井戸成長におけるAlNバッファ層の効果2016

    • Author(s)
      藤田直宏、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Au2次元回折格子における光学ミラーの作製と光学的特性評価2016

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス(東京都・文京区)
    • Year and Date
      2016-10-31
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Agを用いた二層型ワイヤーグリッド構造の光学特性評価2016

    • Author(s)
      渡邊直哉、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会ナノオプティクス研究グループ 第23回研究討論会
    • Place of Presentation
      大阪大学吹田キャンパス(大阪府・吹田市)
    • Year and Date
      2016-11-28
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] AlN成長のための空気中アニールによるc面サファイアの原子ステップ形成2016

    • Author(s)
      玉置真哉、鈴木周平、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Detecting High-refractive-index (n> 1.5) Media using Surface Plasmon Sensor with One-Dimensional Au Diffraction Grating on Glass Substrate2016

    • Author(s)
      Atsushi Motogaito, Shinya Mito, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      Light, Energy and the Environment Congress
    • Place of Presentation
      Leipzig (Germany)
    • Year and Date
      2016-11-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] RF加熱式HVPE法を用いたサファイア基板上へのAlN成長2016

    • Author(s)
      山下泰弘、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] サブ波長構造を有するAu 2 次元回折格子の作製と光学特性評価2016

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの周期及び入射角度依存性2016

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] ワイヤーグリッド構造における表面プラズモン分散曲線と透過率マッピング2016

    • Author(s)
      中島智康、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス(東京都・文京区)
    • Year and Date
      2016-10-31
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの光学特性評価2016

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会ナノオプティクス研究グループ 第23回研究討論会
    • Place of Presentation
      大阪大学吹田キャンパス(大阪府・吹田市)
    • Year and Date
      2016-11-28
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] ワイヤーグリッド構造における表面プラズモン 分散曲線と透過率マッピング2016

    • Author(s)
      中嶋智康、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス(東京都・文京区)
    • Year and Date
      2016-10-31
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Fabrication of High-Quality AlN Template on Sapphire by HighTemperature Annealing2016

    • Author(s)
      Hideto Miyake, Chia-Hung Lin, Yikang Liu and Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando (USA)
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの周期及び入射角度依存性2016

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] 2 層型ワイヤーグリッド偏光子の空間制御と光学特性評価2016

    • Author(s)
      中嶋智康、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] The Study on Fabricated and Characterization of Double-layer Wire Grid Structure using Ag2016

    • Author(s)
      Naoya Watanabe, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 6th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学(三重県・津市)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] 2層型ワイヤーグリッド偏光子の空間制御と光学特性評価2016

    • Author(s)
      中嶋智康、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Detecting High-refractive-index (n>1.5) Media using Surface Plasmon Sensor with One-dimensional Au Diffraction Grating on Glass Substrate2016

    • Author(s)
      Atsushi Motogaito, Shinya Mito, HidetoMiyake and Kazumasa Hiramatsu
    • Organizer
      Light, Energy and the Environment Congress
    • Place of Presentation
      Leipzig (Germany)
    • Year and Date
      2016-11-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Structural Study of GaN Grown on Nonpolar Bulk GaN Substrates with Trench Patterns2016

    • Author(s)
      Shunsuke Okada, Hiroki Iwai, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando (USA)
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] r面サファイア上へのa面AlN成長におけるバッファ層成長温度依存性2016

    • Author(s)
      林家弘、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Relationship between space control and optical properties of a double-layer surface plasmon wire grid polariser2016

    • Author(s)
      T. Nakajima, A. Motogaito, H. Miyake, K. Hiramatsu
    • Organizer
      The 14th International Conference on Near-field Optics, Nanophotonics and Related Techniques
    • Place of Presentation
      アクトシティ浜松コングレスセンター(静岡県・浜松市)
    • Year and Date
      2016-09-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] The controlling of transmittance and refectance of a 2D metal periodic grating structure for cold filter application2016

    • Author(s)
      Atsushi Motogaito, Masanori Kito, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      JSAP-OSA Joint Symposia 2016
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] 一次元金属回折格子を用いた伝搬型表面プラズモンセンサーによる高屈折率媒質の検出(Ⅱ)2015

    • Author(s)
      水戸慎也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application2015

    • Author(s)
      A. Motogaito, M. Kito, H. Miyake and K. Hiramatsu
    • Organizer
      SPIE Micro+Nano Materials, Devices, and Systems
    • Place of Presentation
      Sydney(Australia)
    • Year and Date
      2015-12-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 2層型2次元金属回折格子の作製とフィルター特性評価2015

    • Author(s)
      元垣内敦司、鬼頭壮宜、三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] ±c面GaNの表面熱的安定性に関する研究2015

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、逢坂崇、谷川智之、松岡隆志
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Influence of Thermal Cleaning on the Surface of Free-Standing GaN Substrates2015

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West Convention Center, San Francisco, California
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた 伝搬型表面プラズモンセンサーによる高屈折率媒質の検出(Ⅱ)2015

    • Author(s)
      水戸慎也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] 微傾斜角度の異なるc面サファイア基板上へのAlN成長とN2-COアニール2015

    • Author(s)
      鈴木周平、林家弘、三宅秀人、平松和政、福山博之
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪市立大学(大阪府・大阪市)
    • Year and Date
      2015-11-26
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Fabrication and optical characterization of the Au two-dimensional diffraction grating having sub-wavelength structures2015

    • Author(s)
      T. Yamada, A. Motogaito, H. Miyake and K. Hiramatsu
    • Organizer
      The 5th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学(三重県・津市)
    • Year and Date
      2015-11-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Ag 細線構造を用いた二層型ワイヤーグリッド偏光子の光学特性2015

    • Author(s)
      辻村一希、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会(OPJ2015)
    • Place of Presentation
      筑波大学東京キャンパス(東京都・文京区)
    • Year and Date
      2015-10-28
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] r面サファイア上へのa面AlN成長におけるバッファ層アニール効果2015

    • Author(s)
      林家弘、安井大貴、玉置真哉、三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Transmission of the Double-layer Wire Grid Polarizer and its Dependence on the Incident Angle and the Periodical Structures2015

    • Author(s)
      A. Motogaito, Y. Morishita, H. Miyake and K. Hiramatsu
    • Organizer
      JSAP-OSA Joint Symposia
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Detection of High-Refractive Index Media by a Surface Plasmon Sensor Using a One-Dimensional Metal Diffraction Grating2015

    • Author(s)
      S. Mito, A. Motogaito, H. Miyake and K. Hiramatsu
    • Organizer
      The 20th Microoptics Conference (MOC’15)
    • Place of Presentation
      福岡国際会議場(福岡県・福岡市)
    • Year and Date
      2015-10-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] 一次元金属回折格子を用いた伝搬型表面プラズモンセンサーによる高屈折率媒質の検出2015

    • Author(s)
      水戸慎也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-13
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア微傾斜角度の影響2015

    • Author(s)
      鈴木周平、林家弘、三宅秀人、平松和政、福山博之
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア表面の影響2015

    • Author(s)
      林家弘、鈴木周平、岡田俊祐、三宅秀人、平松和政
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] スパッタ法AlNテンプレート基板を用いたAlNのHVPE成長2015

    • Author(s)
      安井大貴、三宅秀人、平松和政、岩谷素顕、赤﨑勇、天野浩
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-11
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Detecion of high-refractive index media by a surface plasmon sensor using a one dimensional metal diffraction grating2015

    • Author(s)
      S.Mito, A.Motogaito, H.Miyake and K.Hiramatsu
    • Organizer
      The 20th MICROOPTICS CONFERENCE
    • Place of Presentation
      福岡国際会議場(福岡県・福岡市)
    • Year and Date
      2015-10-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application2015

    • Author(s)
      A. Motogaito, M. Kito, H. Miyake and K. Hiramatsu
    • Organizer
      SPIE Micro+Nano Materials, Devices, and Systems
    • Place of Presentation
      Sydney(Australia)
    • Year and Date
      2015-12-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Transmission of the Double-layer Wire Grid Polarizer and its Dependence on the Incident Angle and the Periodical Structures2015

    • Author(s)
      A. Motogaito, Y. Morishita, H. Miyake and K. Hiramatsu
    • Organizer
      JSAP-OSA Joint Symposia 2015
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] サファイア上への窒化物半導体エピタキシーにおける界面制御2015

    • Author(s)
      三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Stady on surface thermal stability of free-standing GaN substrates2015

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      ISPlasma2015
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-03-28
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Optimization of Growth Conditions for A-Plane AlN on R-Plane Sapphire2015

    • Author(s)
      C.-H. Lin,S. Suzuki,H. Miyake and K. Hiramatsu
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West Convention Center, San Francisco, California
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア表面の影響2015

    • Author(s)
      林家弘、鈴木周平、岡田俊祐、三宅秀人、平松和政
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Fabrication and characterization of the double-layer wire grid polarizers using Ag nano-periodical structures2015

    • Author(s)
      K. Tsujimura, A. Motogaito, H. Miyake and K. Hiramatsu
    • Organizer
      The 5th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学(三重県・津市)
    • Year and Date
      2015-11-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア微傾斜角度の影響2015

    • Author(s)
      鈴木周平、林家弘、三宅秀人、平松和政、福山博之
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlN/Sapphire基板を用いたRF加熱式HVPEによるAlN成長2015

    • Author(s)
      安井大貴、三宅秀人、平松和政、岩谷素顕、赤﨑勇、天野浩
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪市立大学(大阪府・大阪市)
    • Year and Date
      2015-11-26
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Temperature Dependence on AlN Buffer Layer in N2-CO Ambient2015

    • Author(s)
      S. Suzuki,H. Miyake,K. Hiramatsu and H. Fukuyama
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West Convention Center, San Francisco, California
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Stady on surface thermal stability of free-standing GaN substrates2015

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      ISPlasma 2015
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-03-28
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 2 層型2 次元金属回折格子の作製とフィルター特性評価2015

    • Author(s)
      元垣内敦司、鬼頭壮宜、三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Ag細線構造を用いた二層型ワイヤーグリッド偏光子の光学特性2015

    • Author(s)
      辻村一希、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス(東京都・文京区)
    • Year and Date
      2015-10-28
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた伝搬型表面プラズモンセンサーによる高屈折率媒質の検出2015

    • Author(s)
      水戸慎也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-13
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] HVPE法AlN成長条件のシミュレーションによる検討2014

    • Author(s)
      安井大貴、三宅秀人、平松和政、河村貴宏
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-25
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Study of AlN growth conditions for hydride vapor phase epitaxy2014

    • Author(s)
      D. Yasui, H. Miyake, K. Hiramatsu and T. Kawamura
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaN growth on carbonized-Si substrate by MOVPE2014

    • Author(s)
      K. Izumi, H. Miyake, K. Hiramatsu, H. Oku, H. Asamura and K. Kawamura
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Influence of thermal cleaning on free-standing GaN surface2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      第33回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2014-07-10
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 光学フィルタへの応用に向けた金属2次元回折格子構造の作製と光学特性評価2014

    • Author(s)
      鬼頭壮宜、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会光エレクトロニクス研究会
    • Place of Presentation
      機械振興会館
    • Year and Date
      2014-12-18
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] HVPE Homoepitaxy on Freestanding AlN Substrate with Trench Pattern2014

    • Author(s)
      Y. Watanabe、H. Miyake、K. Hiramatsu, Y. Iwasaki and S. Nagata
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta, USA
    • Year and Date
      2014-05-19
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] バイナリ型回折レンズによるベッセルビーム生成に関する研究2014

    • Author(s)
      丸谷太一、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス
    • Year and Date
      2014-11-06
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Excitation of Surface Plasmon Polariton at the GaP-Au Interface in a High-Refractive-Index Medium2014

    • Author(s)
      A. Motogaito, S. Nakamura, J. Miyazaki, H. Miyake and K. Hiramatsu
    • Organizer
      17th European Conference on Integrated Optics & 20th Microoptics Conference
    • Place of Presentation
      Nice, France
    • Year and Date
      2014-06-25
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Surface treatment of GaN substrates by thermal cleaning2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaN自立基板の表面におけるサーマルクリーニングの効果2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      電子情報通信学会レーザー量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Year and Date
      2014-11-28
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Influence of thermal annealing in N2-CO ambient on AlN buffer layer2014

    • Author(s)
      S. Suzuki , H. Miyake, K. Hiramatsu, and H. Fukuyama
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア基板のサーマルリング2014

    • Author(s)
      林家弘、鈴木周平、岡田俊祐、三宅秀人、平松和政
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Polarization Property of a Double-layer Wire Grid Polarizer and the Mechanism of Transmission2014

    • Author(s)
      A. Motogaito, Y. Morishita, H. Miyake and K. Hiramatsu
    • Organizer
      17th European Conference on Integrated Optics and 20th Microoptics Conference
    • Place of Presentation
      Nice, France
    • Year and Date
      2014-06-25
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] サファイア上AlN 緩衝層のN2-CO アニールとMOVPE 法による高温成長2014

    • Author(s)
      鈴木周平、三宅秀人、平松和政、福山博之
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 2 層型ワイヤーグリッド偏光子の偏光特性と表面プラズモン共鳴2014

    • Author(s)
      元垣内敦司、森下雄太、三宅秀人、平松和政
    • Organizer
      第75 回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Studies on surface plasmon sensor using one-dimensional metal diffraction grating2014

    • Author(s)
      S. Mito, A. Motogaito, H. Miyake and K. Hiramatsu
    • Organizer
      The 4th International Symposiumfor Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Surface treatment of GaN substrates by thermal cleaning2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] サファイア上AlN 緩衝層のN2-CO アニールとMOVPE 法による高温成長2014

    • Author(s)
      鈴木周平、三宅秀人、平松和政、福山博之
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] エピタキシャル成長のためのGaN 自立基板サーマルクリーニング2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] GaN自立基板の表面におけるサーマルクリーニングの効果2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-05-28
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Influence of thermal annealing in N2-CO ambient on AlN buffer layer2014

    • Author(s)
      S. Suzuki, H. Miyake, K. Hiramatsu, and H. Fukuyama
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 2層型ワイヤーグリッド偏光子の偏光特性と表面プラズモン共鳴2014

    • Author(s)
      元垣内敦司、森下雄太、三宅秀人、平松和政
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 光学フィルタへの応用に向けた金属2次元回折格子構造の作製と可視光及び赤外光の透過・反射制御2014

    • Author(s)
      鬼頭壮宜、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] AlN基板の表面処理とホモエピタキシャル成長2014

    • Author(s)
      渡邉祥順、三宅秀人、平松和政、岩崎洋介
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-05-29
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] AlN基板の表面処理とホモエピタキシャル成長2014

    • Author(s)
      渡邉祥順、三宅秀人、平松和政、岩崎洋介
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-05-29
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaN自立基板の表面におけるサーマルクリーニングの効果2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-05-28
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 光学フィルタへの応用に向けた金属2次元回折格子構造の 作製と光学特性評価2014

    • Author(s)
      鬼頭壮宜、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会光エレクトロニクス研究会、レーザー量子エレクトロニクス研究会
    • Place of Presentation
      機械振興会館
    • Year and Date
      2014-12-18
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Fabrication of AlGaN Multiple Quantum Wells on Sapphire with Lattice-Relaxation Layer2014

    • Author(s)
      K. Nakahama, F. Fukuyo, H. Miyake, K. Hiramatsu, H. Yoshida and Y. Kobayashi
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta, USA
    • Year and Date
      2014-05-19
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] The study for the controlling luminous intensity of white light emitting diode by binary diffractive concave lens2014

    • Author(s)
      N. Hashimoto, K. Manabe, A. Motogaito, H. Miyake, K. Hiramatsu
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Influence of thermal cleaning on free-standing GaN surface2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      第33回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2014-07-10
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE Homoepitaxy on Freestanding AlN Substrate with Trench Pattern2014

    • Author(s)
      Y. Watanabe、H. Miyake、K. Hiramatsu, Y. Iwasaki and S. Nagata
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta, USA
    • Year and Date
      2014-05-19
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaN growth on carbonized-Si substrate by MOVPE2014

    • Author(s)
      K. Izumi, H. Miyake, K. Hiramatsu, H. Oku, H. Asamura, and K. Kawamura
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア基板のサーマルリング2014

    • Author(s)
      林家弘、鈴木周平、岡田俊祐、三宅秀人、平松和政
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] The effect of the lattice-relaxation layer of Si-doped AlGaN multiple quantum2014

    • Author(s)
      K. Nakahama, F. Fukuyo, H. Miyake, K. Hiramatsu, H. Yoshida, and Y. Kobayashi
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Excitation of Surface Plasmon Polariton at the GaP-Au Interface in a High-Refractive-Index Medium2014

    • Author(s)
      A. Motogaito, S. Nakamura, J. Miyazaki, H. Miyake and K. Hiramatsu
    • Organizer
      17th European Conference on Integrated Optics and 20th Microoptics Conference
    • Place of Presentation
      Nice, France
    • Year and Date
      2014-06-25
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] GaN自立基板の表面におけるサーマルクリーニングの効果2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      電子情報通信学会レーザー量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Year and Date
      2014-11-28
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Studies on surface plasmon sensor using one-dimensional metal diffraction grating2014

    • Author(s)
      S. Mito, A. Motogaito, H. Miyake and K. Hiramatsu
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] エピタキシャル成長のためのGaN 自立基板サーマルクリーニング2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 減圧MOVPE法によるAlGaN多重量子井戸構造の緩衝層の効果2014

    • Author(s)
      中濵和大、福世文嗣、三宅秀人、平松和政、吉田治正、小林祐二
    • Organizer
      電子情報通信学会レーザー量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Year and Date
      2014-11-27
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE 法AlN 成長条件のシミュレーションによる検討2014

    • Author(s)
      安井大貴、三宅秀人、平松和政、河村貴宏
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-25
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] バイナリ型回折レンズによるベッセルビーム生成に関する研究2014

    • Author(s)
      丸谷太一、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス
    • Year and Date
      2014-11-06
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] 光学フィルタへの応用に向けた金属2 次元回折格子構造の作製と可視光 及び赤外光の透過・反射制御2014

    • Author(s)
      鬼頭壮宜、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第75 回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-26390082
  • [Presentation] Study of AlN growth conditions for hydride vapor phase epitaxy2014

    • Author(s)
      D. Yasui, H. Miyake, K. Hiramatsu and T. Kawamura
    • Organizer
      The 4th International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] GaP-Au接触界面における伝搬型表面プラズモンポラリトンの励起を用いた化学センサーの製作と評価2013

    • Author(s)
      中村将平、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-29
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 非極性GaN基板上への選択成長とInGaN/GaN多重量子井戸構造の作製2013

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、江夏悠貴、長尾哲
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaN growth on off-angle trench patterned GaN/sapphire templates by MOVPE2013

    • Author(s)
      Z. Cai, H. Miyake, K. Hiramatsu
    • Organizer
      ISPlasma2013
    • Place of Presentation
      名古屋大学
    • Year and Date
      2013-01-31
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Growth of thick AIN on 6H-SiC substrate by low-pressure HVPE2013

    • Author(s)
      S. Kitagawa, H. Miyake, K. Hiramatsu
    • Organizer
      ISPlasma2013
    • Place of Presentation
      名古屋大学
    • Year and Date
      2013-01-29
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] SiドープAINのMOVPE成長における転位密度の影響2013

    • Author(s)
      西尾剛、三宅秀人、平松和政
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-29
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE growth of Si doped AIN on trench patterned template2013

    • Author(s)
      Gou Nishio, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      The Moscone Center, San Francisco, California, USA
    • Year and Date
      2013-02-04
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 6H-SiC基板上へのAINのHVPE成長における核形成制御2013

    • Author(s)
      北川慎、三宅秀人、平松和政
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-28
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlNのMOVPE成長におけるSi取り込み量の転位密度依存性2013

    • Author(s)
      西尾剛、三宅秀人、平松和政、徳本有紀、米永一郎
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Selective-area growth of GaN on nonpolar substrates2013

    • Author(s)
      S. Okada, D. Jinno, M. Narukawa, H. Miyake, K. Hiramatsu, Y. Enatsu, S. Nagao
    • Organizer
      ISPlasma2013
    • Place of Presentation
      名古屋大学
    • Year and Date
      2013-01-31
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlNのMOVPE成長におけるSi取り込み量の転位密度依存性2013

    • Author(s)
      西尾剛、三宅秀人、平松和政、徳本有紀、米永一郎
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Si doped AIN growth on trench patterned template by MOVPE2013

    • Author(s)
      G. Nishio, M. Narukawa, H. Miyake, K. Hiramatsu
    • Organizer
      ISPlasma2013
    • Place of Presentation
      名古屋大学
    • Year and Date
      2013-01-31
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Epitaxy of AlGaN Multiple-Quantum Wells by MOVPE and Its Application of Ultraviolet Light Source2013

    • Author(s)
      H. Miyake, F. Fukuyo, S. Ochiai, K. Hiramatsu, H. Yoshida, Y. Kobayashi
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      サンフランシスコ(米国)
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] AlGaN多重量子井戸層からの電子線励起による発光における障壁層の影響2013

    • Author(s)
      中濱和大、福世文嗣、三宅秀人、平松和政、吉田治正、小林祐二
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Fabrication of high Al content AlGaN MQWs on AlN/sapphire by MOVPE2013

    • Author(s)
      H. Miyake, F. Fukuyo, S. Ochiai, M. Takagi, K. Hiramatsu, H. Yoshida, Y.Kobayashi
    • Organizer
      European Materials Research Society
    • Place of Presentation
      ストラスブール
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] 昇華法AlN基板の表面処理とHVPE法によるホモエピタキシャル成長2013

    • Author(s)
      渡邉祥順、三宅秀人、平松和政、永田俊郎
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Reflectance Characteristics at the Interface of GaP and Au Contact and the Exciting of the Surface Plasmon Polariton2012

    • Author(s)
      Shohei Nakamura, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 2nd International Symposium for Sustainability By Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2012-11-02
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 溝加工AlN基板上へのAlNのMOVPE成長におけるSiドーピング効果2012

    • Author(s)
      西尾剛, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE法AlN成長におけるボイドを用いた歪み・転位低減技術2012

    • Author(s)
      三宅秀人,平松和政
    • Organizer
      第59回応用物理学関係連合講演会(招待講演)
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイアナノ構造を用いた深紫外光取り出し効率の向上2012

    • Author(s)
      高木麻有奈, 落合俊介, 福世文嗣, 三宅秀人, 平松和政
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学 筑紫キャンパス
    • Year and Date
      2012-11-09
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 減圧HVPE法を用いた6H-SiC基板上へのAIN厚膜成長2012

    • Author(s)
      北川慎, 強力尚紀, 三宅秀人, 平松和政
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学 筑紫キャンパス
    • Year and Date
      2012-11-09
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Effect of dislocation blocking on HVPE-grown AIN using the grooved seed in triangle-shaped stripe2012

    • Author(s)
      H. Miyake, T. Nomura, and K. Hiramatsu
    • Organizer
      4th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hotel≪Saint-Petersburg≫, St. Petersburg, Russia
    • Year and Date
      2012-07-17
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Investigation of the surface plasmon polariton excitation conditions at a metal-semiconductor contact interface by simulation of reflectance characteristics2012

    • Author(s)
      Atsushi Motogaito, Shohei Nakamura, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      JSAP-OSA Joint Symosia
    • Place of Presentation
      愛媛大学
    • Year and Date
      2012-09-11
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE法によるAlN成長におけるサファイア界面制御とTEM観察2012

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政, 桑原崇彰, 光原昌寿, 桑野範之
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Selective area growth of semipolar(20-21) and (20-2-1) GaN by MOVPE2012

    • Author(s)
      Daiki Jinno, Bei Ma, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター
    • Year and Date
      2012-10-15
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] a面・n面サファイア上への減圧HVPE法によるAlN成長2012

    • Author(s)
      強力尚紀, 高木雄太, 三宅秀人, 平松和政,江龍修
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AIN grown on a-plane and n-plane Sapphire by Low-pressure HVPE2012

    • Author(s)
      Naoki Goriki, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター
    • Year and Date
      2012-10-15
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Optical analysis of indium incorporation of micro-facets grown on nonpolar GaN bulk substrate2012

    • Author(s)
      B. Ma, D. Jinno, H. Miyake, and K. Hiramatsu
    • Organizer
      第31回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2012-07-11
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 窒化物半導体における特異構造の理解と制御2012

    • Author(s)
      平松和政
    • Organizer
      第59回応用物理学関係連合講演会(招待講演)
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 溝加工AlN基板上へのAlNのMOVPE成長におけるSiドーピング効果2012

    • Author(s)
      西尾剛, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 窒化物半導体における特異構造の理解と制御2012

    • Author(s)
      平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス(招待講演)
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Si-doped AlGaN量子井戸構造の減圧MOVPE法による成長と発光特性2012

    • Author(s)
      落合俊介, 福世文嗣, 三宅秀人, 平松和政, 吉田治正, 小林祐二
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] a面・n面サファイア上への減圧HVPE法によるAlN成長2012

    • Author(s)
      強力尚紀, 高木雄太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] MOVPE Growth of GaN on Off-Angle Trench-Patterned GaN/Sapphire Templates2012

    • Author(s)
      Zhi Cai, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 2nd International Symposium for Sustainability By Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2012-11-02
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Thick AIN Growth on 6H-SiC Substrate by Hydride Vapor Phase Epitaxy2012

    • Author(s)
      Shin Kitagawa, Naoki Gouriki, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 2nd International Symposium for Sustainability By Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2012-11-02
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Epitaxy of AlGaN Multiple-Quantum Wells by MOVPE and Its Application of Ultraviolet Light Source2012

    • Author(s)
      H.Miyake, S.Ochiai1,Y.Shimahara, K. Hiramatsu, F.Fukuyo, H.Yoshida, Y.Kobayashi
    • Organizer
      Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      フロリダ
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] HVPE法AlN成長におけるボイドを用いた歪み・転位低減技術2012

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス(招待講演)
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 3C-SiC/Si基板上GaN成長におけるAlN中間層の効果2012

    • Author(s)
      高谷佳史, 方浩, 三宅秀人, 平松和政, 浅村英俊, 川村啓介, 奥秀彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] MOVPE法によるm面GaN自立基板上へのGaN選択成長2012

    • Author(s)
      神野大樹, Bei Ma, 三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 金属 -半導体接触の界面における反射特性と伝搬型表面プラズモンポラリトンの励起2012

    • Author(s)
      中村 将平, 元垣内 敦司, 三宅 秀人, 平松 和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      タワーホール船堀
    • Year and Date
      2012-10-24
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE法によるAlN成長におけるサファイア界面制御とTEM観察2012

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政, 桑原崇彰, 光原昌寿, 桑野範之
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 減圧MOVPE法によるSi-doped AlGaN多重量子井戸の作製とその深紫外光源応用2012

    • Author(s)
      落合俊介、高木麻有奈、福世文嗣、三宅秀人、平松和政、小林祐二、吉田治正
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究会
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2012-11-30
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE法AlN成長におけるボイドを用いた歪み・転位低減技術2012

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス(招待講演)
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Improvement of GaN Quality by Maskless Epitaxy of Lateral Overgrowth on 3C-SiC/Si substrates2012

    • Author(s)
      Hao Fang, Yoshifumi Takaya, Hideto Miyake, Kazumasa Hiramatsu, Hidetoshi Asamura, Keisuke Kawamura and Hidehiko Oku
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター
    • Year and Date
      2012-10-16
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 非極性GaN基板上への選択MOVPE成長2012

    • Author(s)
      神野大樹、岡田俊祐、三宅秀人、平松和政、江夏悠貴、長尾 哲
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究会
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2012-11-30
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Facet Structures of Selective-Area-Grown GaN on Semipolar(20-21) and (20-2-1) Substrates2012

    • Author(s)
      Shunsuke Okada, Daiki Jinno, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 2nd International Symposium for Sustainability By Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2012-11-02
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 半極性(20-21), (20-2-1)GaN基板上へのMOVPE法による選択成長2012

    • Author(s)
      神野大樹, Bei Ma,三宅秀人, 平松和政, 江夏悠貴, 長尾哲
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      松山大学
    • Year and Date
      2012-09-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 非極性自立GaN結晶のラマン散乱分光による評価2012

    • Author(s)
      馬ベイ, 神野大樹, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2011

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 高Al組成AlGaN混晶薄膜の励起子分子結合エネルギー2011

    • Author(s)
      橘高亮, 武藤弘貴, 室谷英彰, 倉井聡, 山田陽一, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Raman analysis of HVPE-grown free-standing gallium nitride with various orientations2011

    • Author(s)
      Ma, B; Jinno, D; Miyake, H; Hiramatsu, K; Harima, H
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] エッチピット法によるAlNエビタキシャル膜中の貫通転位の評価2011

    • Author(s)
      野村拓也、三宅秀人、平松和政、龍祐樹、桑原崇彰、桑野範之
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Al_xGa_<1-x>N混晶の組成決定2011

    • Author(s)
      金廷坤, 木村篤人, 亀井靖人, 蓮池紀幸, 木曽田賢治, 播磨弘, 島原佑樹, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 250 nm emission from Si-doped AlGaN and its quantum wells upon excitation by electron beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida, T.Fujita, T.Kuwahara, N.Kuwano
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Influence of carrier gas and growth temperature on MOVPE growth of AlN2011

    • Author(s)
      Miyagawa, R; Yang, S; Miyake, H; Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlNのMOVPE成長におけるキャリアガスの影響2011

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Influence of carrier gas and growth temperature on MOVPE growth of AlN2011

    • Author(s)
      Miyagawa, R; Yang, S; Miyake, H; Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカサンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法によるAlNホモエピタキシャル成長2011

    • Author(s)
      野村拓也, 奥村健太, 三宅秀人, 平松和政, 江龍修, 福山博之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2011

    • Author(s)
      楊士波、宮川鈴衣奈、三宅秀人、平松和政、播磨弘
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 減圧HVPE法を用いたAlN成長における転位密度の低減2011

    • Author(s)
      野村拓也, 藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Study on interface for AlN growth on sapphire substrate2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 深い溝加工の6H-SiC基板を用いた減圧HVPE法によるAlN成長2011

    • Author(s)
      強力尚紀、三宅秀人、平松和政
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2011

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Raman scattering spectroscopy of residual stresses in epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlNのMOVPE成長におけるキャリアガスの影響2011

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 3C-SiC/Si基板上AlGaN-buffer層を用いたGaN成長の歪み制御2011

    • Author(s)
      高谷佳史、大内澄人、方浩、三宅秀人、平松和政、浅村英俊、川村啓介
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 溝加工AlN上でのMOVPE法におけるAlN成長速度の異方性2011

    • Author(s)
      楊士波, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by lowpressure HVPE2011

    • Author(s)
      Takagi, Y Miyagawa, R Miyake, H Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-14
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by lowpressure HVPE2011

    • Author(s)
      Takagi, Y Miyagawa, R Miyake, H Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-14
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Ultraviolet light source using MOVPE grown Si-doped AlGaN on AlN/sapphire2011

    • Author(s)
      H. Miyake, Y. Shimahara, S. Ochiai, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka, H. Yoshida
    • Organizer
      E-MRS Spring Meeting(招待講演)
    • Place of Presentation
      ニース(フランス)
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN homo-epitaxial growth on sublimation-AlN substrate by low-pressure HVPE2011

    • Author(s)
      T.Nomura, K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu, Y.Yamada
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] エッチピット法によるAlNエピタキシャル膜中の貫通転位の評価2011

    • Author(s)
      野村拓也、三宅秀人、平松和政、龍祐樹、桑原崇彰、桑野範之
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlGaN系量子井戸構造の内部量子効率に対するSi添加効果2011

    • Author(s)
      赤瀬大貴, 室谷英彰, 穴井恒二, 倉井聡, 山田陽一, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Raman scattering spectroscopy of residual stresses in epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H. Miyake, Y. Shimahara, S. Ochiai, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Si-doped AlGaN多重量子井戸の作製と発光特性2011

    • Author(s)
      落合俊介, 島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN/サファイア上の低?中Al組成AlGaN層の成長過程と転位の挙動2011

    • Author(s)
      桑野範之, 藤田智彰, 桑原崇彰, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication and emission properties of Si-doped AlGaN multiple quantum wells2011

    • Author(s)
      S.Ochiai, Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Al_xGa_<1-x>N膜におけるLOフォノン-プラズモン結合モードの観測2011

    • Author(s)
      木村篤人, 金廷坤, 亀井靖人, 蓮池紀幸, 木曽田賢治, 播磨弘, 島原佑樹, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE法による選択成長を用いたGaN基板の反り制御2011

    • Author(s)
      大内澄人, 直井弘之, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] サファイア上へのAlN成長における界面層の評価(2)2011

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE法GaN成長におけるボイド形成による基板の反り制御2011

    • Author(s)
      大内澄人、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 非極性自立基板を用いたGaNホモエピタキシャル成長2011

    • Author(s)
      神野大樹, Bei Ma, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Effects of carrier gas and temperature on MOVPE growth of AlN2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN homo-epitaxial growth on sublimation-AlN substrate by low-pressure HVPE2011

    • Author(s)
      T.Nomura, K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu, Y.Yamada
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Study on interface for AlN growth on sapphire substrate2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Si-doped AlGaN超格子の作製と発光評価2011

    • Author(s)
      三宅秀人, 島原佑樹, 落合俊介, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正, 桑野範之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] a面Sapphire上周期溝加工c面AlNを基板に用いたHVPE法によるAlN厚膜成長2011

    • Author(s)
      高木雄太、三宅秀人、平松和政
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Distribution of three-dimensional local strain in thick AlN film grown on a trenchpatterned AlN/α-Al_2O_3 template2011

    • Author(s)
      原田進司, 渡邉翔太, 吉川純, 中村芳明, 酒井朗, 三宅秀人, 平松和政, 今井康彦, 木村滋, 坂田修
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工c面AlN/a面Sapphire上への減圧HVPE法によるAlN成長2011

    • Author(s)
      高木雄太, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による周期溝加工AlN/a面Sapphire上への厚膜AIN成長2011

    • Author(s)
      高木雄太, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法によるAlNホモエピタキシャル成長2011

    • Author(s)
      野村拓也, 奥村健太, 三宅秀人, 平松和政, 江龍修, 福山博之
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE法による選択成長を用いたGaN基板の反り制御2011

    • Author(s)
      大内澄人, 直井弘之, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における中間層制御2011

    • Author(s)
      宮川鈴衣奈、楊士波、三宅秀人、平松和政、桑原崇彰、桑野範之、光原昌寿
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN/サファイア上の低?中Al組成AlGaN層の成長過程と転位の挙動2011

    • Author(s)
      桑野範之, 藤田智彰, 桑原崇彰, 三宅秀人, 平松和政
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] サファイア上へのAlN成長における界面層の評価(2)2011

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN homo-epitaxial growth on sublimation-AlN substrate by low-pressure HVPE2011

    • Author(s)
      T.Nomura, K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu, Y.Yamada
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカサンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Si-doped AlGaN超格子の作製と発光評価2011

    • Author(s)
      三宅秀人, 島原佑樹, 落合俊介, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正, 桑野範之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2011

    • Author(s)
      楊士波、宮川鈴衣奈、三宅秀人、平松和政、播磨弘
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West 2011
    • Place of Presentation
      San Francisco, CA, USA
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R. Miyagawa, S. Yang, H. Miyake, and K. Hiramatsu, H. Miyake, K. Okumura, T. Nomura, K. Hiramatsu and Y. Yamada
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors
    • Place of Presentation
      Wakayama, Japan
    • Year and Date
      2011-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Ultraviolet light source using MOVPE grown Si-doped AlGaN on AlN/sapphire2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      E-MRS Spring Meeting
    • Place of Presentation
      Congress Center(ニース、フランス)(招待講演)
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 無極性・半極性自立基板を用いたGaNホモエピタキシャル成長2011

    • Author(s)
      神野大樹、馬ベイ、方浩、三宅秀人、平松和政
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] X線マイクロ回折を用いたGaN自立基板の格子面傾斜ゆらぎの解析2011

    • Author(s)
      渡邉翔大, 原田進司, Thanh Khan Dinh, 吉川純, 中村芳明, 三宅秀人, 平松和政, 今井康彦, 木村滋, 坂田修身, 酒井朗
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] a面Sapphire上周期溝加工c面AlNを基板に用いたHVPE法によるAlN厚膜成長2011

    • Author(s)
      高木雄太、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法によるAlNホモエピタキシャル成長2011

    • Author(s)
      野村拓也, 奥村健太, 三宅秀人, 平松和政, 江龍修, 福山博之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工c面AlN/a面Sapphire上への減圧HVPE法によるAlN成長2011

    • Author(s)
      高木雄太, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 深い溝加工の6H-SiC基板を用いた減圧HVPE法によるAlN成長2011

    • Author(s)
      強力尚紀、三宅秀人、平松和政
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Ultraviolet Light Source using MOVPE grown Si-doped AlGaN on AlN/Sapphire2011

    • Author(s)
      H. Miyake, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka, H. Yoshida
    • Organizer
      E-MRS 2011 Spring Meeting
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 溝加工AlN上でのMOVPE法におけるAlN成長速度の異方性2011

    • Author(s)
      楊士波,宮川鈴衣奈,三宅秀人,平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 周期溝加工c面AlN/a面Sapphire上への減圧HVPE法によるAlN成長2011

    • Author(s)
      高木雄太, 三宅秀人, 平松和政
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Effects of carrier gas and temperature on MOVPE growth of AlN2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] PETフィルム上バイナリ型回折凸レンズにおける緑色光の配光制御2011

    • Author(s)
      元垣内敦司, 荒川和哉, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による周期溝加工AlN/a面Sapphire上への厚膜AlN成長2011

    • Author(s)
      高木雄太, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] サファイア上へのAlN成長における界面層の評価(2)2011

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 自立GaN結晶を用いたラマン散乱分光の面方位依存性2011

    • Author(s)
      馬ベイ、神野大樹、三宅秀人、平松和政、播磨弘
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における中間層制御2011

    • Author(s)
      宮川鈴衣奈、楊士波、三宅秀人、平松和政、桑原崇彰、桑野範之、光原昌寿
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer2011

    • Author(s)
      Fang, H; Takaya, Y; Ohuchi, S; Miyake, H; Hiramatsu, K; Asamura, H; Kawamura, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] r面サファイア上a面GaN成長における反りのその場観察2010

    • Author(s)
      馬ベイ, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      Montpellier,France
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京(招待講演)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2010

    • Author(s)
      楊士波, 宮川鈴衣奈, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国 ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京(招待講演)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Evidence for Movement of Threading Dislocations in GaN Thin Layers during the VPE Growth2010

    • Author(s)
      N.Kuwano, T.Fujita, T.Ezaki, R.Miyagawa, S.Ohuchi, H.Miyake, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランス モンペリエ
    • Year and Date
      2010-07-05
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 短焦点距離バイナリ型回折レンズにおける回折効率の周期内凸部占有率依存性2010

    • Author(s)
      荒川和哉, 元垣内敦司, 三宅秀人, 平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      中央大学 駿河台記念館
    • Year and Date
      2010-11-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア上へのAlN成長における界面層の評価2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 陽電子消滅によるAlGaN中の欠陥評価2010

    • Author(s)
      上殿明良, 三宅秀人, 平松和政, 石橋章司
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(招待講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 電子線励起による深紫外光源用Si-doped AlGaNの作製2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] SiCを基板に用いた減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 野村拓也, 三宅秀人, 平松和政, 江龍修
    • Organizer
      電子情報通信学会研究会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE growth of Si-doped AlGaN and its application for ultra-violet light source2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu
    • Organizer
      10th Akasaki Research Center Symposium
    • Place of Presentation
      ルブラ王山(名古屋市)(招待講演)
    • Year and Date
      2010-11-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN Growth on Trench-Patterned AlN/Sapphire by Low-Pressure HVPE2010

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] HVPE growth of crack-free thick AlN film on trench-patterned AlN template2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Structural study of selective-area grown a-plane GaN2010

    • Author(s)
      B.Ma, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランス モンペリエ
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における界面制御2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H. Miyake, H. Taketomi, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)(招待講演)
    • Place of Presentation
      北京(中国)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication and characterization of binary diffractive lens with the 100μm-order-focal length2010

    • Author(s)
      A. Motogaito, K. Arakawa, Y. Nakayama, H. Miyake and K. Hiramatsu
    • Organizer
      16th Microoptics Conference(MOC2010)
    • Place of Presentation
      新竹(台湾)
    • Year and Date
      2010-11-02
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of c-plane AlN on a-plane sapphire using high-temperature buffer layer2010

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-02
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] サファイア基板上AlN成長における界面層評価2010

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのAlN横方向成長2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Low Pressure HVPE Growth of AlN on 6H-SiC2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Study on Light Control and LED Lighting Application2010

    • Author(s)
      K. Hiramatsu and A. Motogaito
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting(招待講演)
    • Place of Presentation
      ソウル(韓国)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア上へのAlN成長における界面層の評価2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Growth of High-Quality AlN on a-Plane Sapphire by HVPE2010

    • Author(s)
      Y.Takagi, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Si-doped AlGaNのMOVPE成長と光学特性評価2010

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of Deep Ultra-violer Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京(招待講演)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 溝加工6H-SiC基板上への減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Interface Control of AlN Buffer and Sapphire Substrate for AlN Growth2010

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AIN Growth on Trench-Patterned AlN/Sapphire by Low-Pressure HVPE2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Study on AlN buffer layer for AlN growth on sapphire substrate by MOVPE2010

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-15
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] HVPE growth of AlN on trench-patterned 6H-SiC substrates2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Study on Light Control and LED Lighting Application2010

    • Author(s)
      K.Hiramatsu, A.Motogaito
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国 ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Low Pressure HVPE Growth of AIN on 6H-SiC2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H. Miyake, H. Taketomi, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing, China(招待講演)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2010

    • Author(s)
      楊士波, 宮川鈴衣奈, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Stress Analysis of a-plane GaN Grown on r-plane Sapphire Substrates2010

    • Author(s)
      B.Ma, J.Zhang, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H. Miyake, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      Seoul Korea
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 高Al組成を有するAl_xGa_<1-x>Nの深い電子準位の評価2010

    • Author(s)
      奥崎慎也, 菅原克也, 武富浩幸, 三宅秀人, 平松和政, 橋詰保
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE growth of Si-doped AlGaN and its application for ultra-violet light source2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu
    • Organizer
      10th Akasaki Research Center Symposium
    • Place of Presentation
      ルブラ王山(名古屋市)(招待講演)
    • Year and Date
      2010-11-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 昇華法AlN基板上への減圧HVPE法によるAlNホモエピタキシャル成長2010

    • Author(s)
      野村拓也, 奥村建太, 三宅秀人, 平松和政, 江龍修, 山田陽一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランスモンペリエ
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Growth of High-Quality AlN on a-Plane Sapphire by HVPE2010

    • Author(s)
      Y.Takagi, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN Growth on Trench-Patterned AlN/Sapphire by Low-Pressure HVPE2010

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Al_xGa_<1-x>N膜組成とバンドギャップ変化の分光評価2010

    • Author(s)
      木村篤人, 金廷坤, 亀井靖人, 蓮池紀幸, 木曽田賢治, 播磨弘, 島原佑樹, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Optical Polarization Properties of Si-doped AlGaN Ternary Alloy Epitaxial Layers2010

    • Author(s)
      H.Murotani, R.Kittaka, S.Kurai, Y.Yamada, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] r面サファイア上a面GaNの反り異方性2010

    • Author(s)
      馬ベイ, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] AlGaN混晶の広領域での複素屈折率2010

    • Author(s)
      岩井浩紀, 小田哲, 福井一俊, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2010

    • Author(s)
      楊士波, 宮川鈴衣奈, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] LEDの配光制御とLED照明応用2010

    • Author(s)
      元垣内敦司、平松和政
    • Organizer
      日本学術振興会真空ナノエレクトロニクス第158委員会第83回研究会(招待講演)
    • Place of Presentation
      三重大学工学部
    • Year and Date
      2010-06-24
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 電子線励起法による深紫外光源用Si-doped AlGaNの作製と特性評価2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Growth of High-Quality AlN on a-Plane Sapphire by HVPE2010

    • Author(s)
      Y.Takagi, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における界面制御2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Low Pressure HVPE Growth of AlN on 6H-SiC2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会研究会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN/サファイア上AlGaN層の成長過程と貫通転位の挙動2010

    • Author(s)
      桑野範之, 藤田智彰, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(招待講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of crack-free thick AlN film on trench-patterned AlN template2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Deep-ultraviolet luminescence from Si-doped AlGaN grown by low-pressure MOVPE2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] SiCを基板に用いた減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 野村拓也, 三宅秀人, 平松和政, 江龍修
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] SiCを基板に用いた減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 野村拓也, 三宅秀人, 平松和政, 江龍修
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] LEDの配光制御とLED照明応用2010

    • Author(s)
      元垣内敦司、平松和政
    • Organizer
      日本学術振興会真空ナノエレクトロニクス第158委員会 第83回研究会
    • Place of Presentation
      三重大学工学部(招待講演)
    • Year and Date
      2010-06-24
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of c-plane AlN on a-plane sapphire using high-temperature buffer layer2010

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-02
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Recombination Dynamics of Localized Excitons in Al_xGa_<1-x>N (0.37<x<0.81) Ternary Alloys2010

    • Author(s)
      H.Murotani, R.Kittaka, S.Kurai, Y.Yamada, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 昇華法AlN基板上への減圧HVPE法によるAlNホモエピタキシャル成長2010

    • Author(s)
      野村拓也, 奥村建太, 三宅秀人, 平松和政, 江龍修, 山田陽一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication and characterization of binary diffractive lens with the 100μm-order-focal length2010

    • Author(s)
      A.Motogaito, K.Arakawa, Y.Nakayama, H.Miyake, K.Hiramatsu
    • Organizer
      16^<th> Microoptics Conference (MOC2010)
    • Place of Presentation
      台湾 新竹
    • Year and Date
      2010-11-02
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 電子線励起による深紫外光源用Si-doped AlGaNの作製2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of AlN on trench-patterned 6H-SiC substrates2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 選択成長により形成されたボイドを利用したGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Stress Analysis of a-plane GaN Grown on r-plane Sapphire Substrates2010

    • Author(s)
      B.Ma, J.Zhang, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア基板上AlN成長における界面層評価2010

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Si-doped AlGaNのMOVPE成長と光学特性評価2010

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] AlNのサファイア上AlGaN層の成長過程と貫通転位の挙動2010

    • Author(s)
      桑野範之, 藤田智彰, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H. Miyake, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting(招待講演)
    • Place of Presentation
      ソウル(韓国)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランス モンペリエ
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlGaN混晶薄膜における偏光特性のSi濃度依存性2010

    • Author(s)
      室谷英彰, 橘高亮, 武藤弘貴, 倉井聡, 山田陽一, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 短焦点距離バイナリ型回折レンズの構造最適化2010

    • Author(s)
      荒川和哉、中山裕次、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第35回光学シンポジウム
    • Place of Presentation
      東京大学 生産技術研究所
    • Year and Date
      2010-07-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Interface Control of AlN Buffer and Sapphire Substrate for AlN Growth2010

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Deep-ultraviolet luminescence from Si-doped AlGaN grown by low-pressure MOVPE2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 選択成長により形成されたボイドを利用したGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 選択成長を用いて形成したボイドによるGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア上へのAlN成長における界面層の評価2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 選択成長を用いて形成したボイドによるGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Interface Control of AlN Buffer and Sapphire Substrate for AlN Growth2010

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカタンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication of 247nm Light-Source Using AlGaN on AlN/Sapphire2010

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, et al.
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlGaN混晶薄膜の励起スペクトル2010

    • Author(s)
      橘高亮, 室谷英彰, 武藤弘貴, 倉井聡, 山田陽一, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of crack-free thick AlN film on trench-patterned AlN template2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 昇華法AlN基板上への減圧HVPE法によるAlNホモエピタキシャル成長2010

    • Author(s)
      野村拓也, 奥村建太, 三宅秀人, 平松和政, 江龍修, 山田陽一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア基板上AlN成長における界面層評価2010

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 電子線励起による深紫外光源の開発2010

    • Author(s)
      福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正, 島原佑樹, 武富浩幸, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(招待講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 電子線励起法による深紫外光源用Si-doped AlGaNの作製と特性評価2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu, F Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国 ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 溝加工6H-SiC基板上への減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのAlN横方向成長2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] HVPE growth of c-plane AlN on a-plane sapphire using high-temperature buffer layer2010

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-02
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] r面サファイア上a面GaNの反り異方性2010

    • Author(s)
      馬ベイ, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのAlN横方向成長2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Study on AlN buffer layer for AlN growth on sapphire substrate by MOVPE2010

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] r面サファイア上a面GaN成長における反りのその場観察2010

    • Author(s)
      馬ベイ, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of AlN on trench-patterned 6H-SiC substrates2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Study on AlN buffer layer for AlN growth on sapphire substrate by MOVPE2010

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 溝加工6H-SiC基板上への減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Structural study of selective-area grown a-plane GaN2010

    • Author(s)
      B.Ma, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Deep-ultraviolet luminescence from Si-doped AlGaN grown by low-pressure MOVPE2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of 247 nm Light-Source Using AlGaN on AlN/Sapphire2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, et al.
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Effects of r-plane sapphire nitridation on a-plane GaN grown by MOVPE2009

    • Author(s)
      B.Ma, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界(中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による溝加工基板上へのAlN成長2009

    • Author(s)
      奥浦一輝、藤田浩平、三宅秀人、平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工基板を用いた減圧HVPE法によるAlN厚膜成長2009

    • Author(s)
      平松和政, 三宅秀人, 奥浦一輝, 桑野範之
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of AlN on trench patterned sapphire2009

    • Author(s)
      H. Miyake, Y. Katagiri, K. Okuura and K.Hiramatsu
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2009-01-26
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] MOVPE法によるr面サファイア上へのa面GaN成長2009

    • Author(s)
      馬ベイ, 宮川鈴衣奈, 胡衛国, 三宅秀人, 平松和政
    • Organizer
      電子情報通信学会 電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Influence of off-cut angle of sapphire on the crystal quality of nonpolara-plane AlN by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界 (中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] MOVPE法による高温AlN成長2009

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of AlN on trench patterned sapphire2009

    • Author(s)
      H.Miyake, Y.Katagiri, K.Okuura, K.Hiramatsu
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      San Jose, CA, USA(招待講演)
    • Year and Date
      2009-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE法を用いたa面GaNの選択成長2009

    • Author(s)
      馬ベイ、胡衛国、宮川鈴衣奈、三宅秀人、平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-14
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AlN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 高Al組成AlGaNのAlN/sapphire上へのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹、武富浩幸、三宅秀人、平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE法を用いたa面GaNの選択成長2009

    • Author(s)
      馬ベイ, 胡衛国, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-14
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAIN成長2009

    • Author(s)
      藤田浩平、奥浦一一輝、三宅秀人、平松和政、乗松潤、平山秀樹
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 窒化物半導体のMOVPE成長におけるその場観察2009

    • Author(s)
      生川満久, 西村将太, 小川原悠哉, 三宅秀人, 平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of AlN on trench patterned sapphire(招待講演)2009

    • Author(s)
      H. Miyake, Y. Katagiri, K. Okuura and K. Hiramatsu
    • Organizer
      SPIE Photonic West
    • Year and Date
      2009-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] In situ monitoring on MOVPE growth of nitride semiconductors2009

    • Author(s)
      生川満久, 西村将太, 小川原悠哉, 三宅秀人, 平松和政
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖 (滋賀県守山市)
    • Year and Date
      2009-07-10
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures2009

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, M.Narukawa, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界 (中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] r面サファイア上へのMOVPE法によるa面AlN, AlGaN成長2009

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN/sapphhle上のAlGaNのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹、武富浩幸、三宅秀人、平松和政, 他4名
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による溝加工基板上へのAlN成長2009

    • Author(s)
      奥浦一輝, 藤田浩平, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AIN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semi conductors
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      H. Miyake, H. Taketomi, Y. Shimahara, K. Hiramatsu, et al.
    • Organizer
      The 8th International Conference on Nitride Semiconductors(招待講演)
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-21
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] A-Plane AlN and AlGaN Growth on R-Plane Sapphire by MOVPE2009

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による溝加工基板上へのAlN成長2009

    • Author(s)
      奥浦一輝, 藤田浩平, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      三宅秀人, 武富浩幸, 島原佑樹, 平松和政, et al.
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-21
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による6H-SiC上へのAlN成長2009

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE法による高温AlN成長2009

    • Author(s)
      宮川鈴衣奈、三宅秀人、平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 加工サファイア基板上へのMOVPE法によるGaN成長における反射・反りのその場観察2009

    • Author(s)
      西村将太、生川光久、三宅秀人、平松和政、深野敦之、谷口豊
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Low-Pressure HVPE growth of thick AlN on trench patterned Sapphire substrate2009

    • Author(s)
      K. Okuura, Y. Katagiri, H. Miyake and K.Hiramatsu
    • Organizer
      First International Symposium on Advanced Plasma Science and its Applications
    • Place of Presentation
      名古屋
    • Year and Date
      2009-03-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] 高Al組成AlGaNのAlN/sapphire 上へのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による6H-SiC上へのAlN成長2009

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 窒化物半導体のMOVPE成長におけるその場観察2009

    • Author(s)
      生川満久、西村将太、小川原悠哉、三宅秀人、平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AlN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semi conductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE法によるr面サファイア上へのa面GaN成長2009

    • Author(s)
      馬ベイ、宮川鈴衣奈、胡衛国、三宅秀人、平松和政
    • Organizer
      電子情報通信学会電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平、奥浦一輝、三宅秀人、平松和政、乗松潤、平山秀樹
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of AlN on trench pat terned sapphire(招待講演)2009

    • Author(s)
      H. Miyake, Y. Katagiri, K. Okuura, K. Hiramatsu
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      San Jose, CA, USA
    • Year and Date
      2009-01-26
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] 電子線励起によるAlGaNを用いた深紫外光源2009

    • Author(s)
      武富浩幸, 島原佑樹, 三宅秀人, 平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AlN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] r面サファイア上へのMOVPE法によるa面AlN、 AlGaN成長2009

    • Author(s)
      宮川鈴衣奈、三宅秀人、平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による6H-SiC上へのAlN成長2009

    • Author(s)
      奥村建太、三宅秀人、平松和政、江龍修
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, et al.
    • Organizer
      The 8th International Conference on Nitride Semi conductors
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-21
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 電子線励起によるAlGaNを用いた深紫外光源2009

    • Author(s)
      武富浩幸、島原佑樹、三宅秀人、平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-20
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures2009

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, M.Narukawa, H.Miyake K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界(中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] In situ monitoring on MOVPE growth of nitride semiconductors2009

    • Author(s)
      M. Narukawa, Y. Ogawahara, H. Miyake and K. Hiramatsu
    • Organizer
      First International Symposium on Advanced Plasma Science and its Applications
    • Place of Presentation
      名古屋
    • Year and Date
      2009-03-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Influence of off-cut angle of sapphire on the crystal quality of nonpolara-plane AIN by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界(中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Control of Facet Structures in Selective Area Growth (SAG) of a-plane GaN by MOVPE2009

    • Author(s)
      B.Ma, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン(米国)
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] AlN/sapphire上のAlGaNのMOVPE成長と電子線励起による深紫外発光2009

    • Author(s)
      武富浩幸、三宅秀人、平松和政, 他4名
    • Organizer
      電子情報通信学会電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学(豊橋市)
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Growth of High Quality c-plane AlN on a-plane Sapphire2009

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン (米国)
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 周期溝加工基板を用いた減圧HVPE法によるAlN厚膜成長2009

    • Author(s)
      平松和政、三宅秀人、奥浦一輝、桑野範之
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] A-Plane AlN and AlGaN Growth on R-Plane Sapphire by MOVPE2009

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Control of Facet Structures in Selective Area Growth (SAG) of a-plane GaN by MOVPE2009

    • Author(s)
      馬ベイ, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン (米国)
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN/sapphire 上のAlGaNのMOVPE成長と電子線励起による深紫外発光2009

    • Author(s)
      武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      電子情報通信学会 電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学 (豊橋市)
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 加工サファイア基板上へのMOVPE法によるGaN成長における反射・反りのその場観察2009

    • Author(s)
      西村将太, 生川光久, 三宅秀人, 平松和政, 深野敦之, 谷口豊
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Effects of r-plane sapphire nitridation on a-plane GaN grown by MOVPE2009

    • Author(s)
      馬ベイ, 三宅秀人, 平松和政
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界 (中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN/sapphire 上のAlGaNのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, et al.
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-21
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] In situ monitoring on MOVPE growth of nitride semiconductors2009

    • Author(s)
      M.Narukawa, S.Nishimura, Y.Ogawahara, H.Miyake, K.Hiramatsu
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2009-07-10
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Growth of High Quality c-plane AlN on a-plane Sapphire2009

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン(米国)
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] ファセット制御ELO法による窒化物半導体のエピタキシャル成長2008

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      日本学術振興会マイクロビームアナリシス第141委員会
    • Place of Presentation
      三重大学(招待講演)
    • Year and Date
      2008-05-13
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Growth of crack-free AlGaN on selective area growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et al.
    • Organizer
      14th International Conference on Metalorganic vapor phase epitaxy
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Contrkl Technique2008

    • Author(s)
      H. Miyake, Y. Katagiri, S. Kishino, K. Okuura, K. Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux, Swiss
    • Year and Date
      2008-10-08
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] The effects of growth temperature on the properties of nonpolar a-plane AlN by LP-HVPE2008

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux, Switzerland
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Fabrication of the binary blazed diffractive lens for controlling the luminous intensity distribution of LED light2008

    • Author(s)
      A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake and K. Hiramatsu
    • Organizer
      6th International Conference on Optics-photonics Design & Fabrication
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2008-06-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Control Technique2008

    • Author(s)
      H. Miyake, Y. Katagiri, S. Kishino, K. Okuura, and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Year and Date
      2008-10-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of the binary blazeddiffractiveeens for controling the luminous intensity distribution of LED light2008

    • Author(s)
      A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake, K. Hiramatsu
    • Organizer
      6th Internat ional Conference on Optics-photonics Design and Fabrication
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2008-06-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Growth of crack-free AlGaN on selective area growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et.al.
    • Organizer
      14th International Conference on Metalorganic vapor phase epitaxy
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Growth of crack-free AlGaN on selective area growth GaN2008

    • Author(s)
      H.Miyake, N. Masuda, Y. Ogawahara, M.Narukawa, K.Hiramatsu, et.al.
    • Organizer
      14th International Conference on Metal organic vapor phase epitaxy
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Control Technique2008

    • Author(s)
      H.Miyake, Y.Katagiri, S.Kishino, K.Okuura, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux,Switzerland
    • Year and Date
      2008-10-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of the binary blazed diffractive lens for controlling the luminous intensity distribution of LED light2008

    • Author(s)
      A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake and K. Hiramatsu
    • Organizer
      International Conference on Optics-photonics Design & Fabrication
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2008-06-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Growth of crack-free AlGaN on selective area growth GaN2008

    • Author(s)
      H.Miyake, N.Masuda, Y.Ogawahara, M.Narukawa, K.Hiramatsu, et al.
    • Organizer
      14th International Conference on Metalorganic vapor phase epitaxy
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] ファセット制御ELO法による窒化物半導体のエピタキシャル成長(招待講演)2008

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      日本学術振興会マイクロビームアナリシス第141委員会
    • Place of Presentation
      三重大学
    • Year and Date
      2008-05-13
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Control Technique2008

    • Author(s)
      H.Miyake, Y.Katagiri, S.Kishino, K.Okuura, and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux, Swiss
    • Year and Date
      2008-10-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] R面サファイア上へのA面GaN成長における成長圧力依存性(招待講演)2007

    • Author(s)
      三宅秀人, 宮川鈴衣奈, 生川満久、平松和政
    • Organizer
      プレ・ISGN-2シンポジウム
    • Place of Presentation
      東京・田町
    • Year and Date
      2007-12-19
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] R面サファイア上へのA面GaN成長における成長圧力依存性(招待講演)2007

    • Author(s)
      三宅 秀人, 宮川 鈴衣奈, 生川 満久、平松 和政
    • Organizer
      プレ・ISGN・2シンポジウム
    • Place of Presentation
      東京・田町
    • Year and Date
      2007-12-19
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] Optical characterization of Japanese papers for application to the LED lighting system with human sensitivity2007

    • Author(s)
      A.Motogaito, K.Manabe, Y.Yamanaka, N.Machida, H.Miyake and K.Hiramatsu
    • Organizer
      1st International Conference on White LEDs and Solid State Lighting
    • Place of Presentation
      東京
    • Year and Date
      2007-11-29
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Selective area growth of III-nitride and their application for emitting Devices2007

    • Author(s)
      K.Hiramatsu, H.Miyake, D.Li
    • Organizer
      1st International Conference on White LEDs and Solid State Lighting
    • Place of Presentation
      Tokyo, Japan(招待講演)
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Selective area growth of III-nitride and their application for emitting Devices(招待講演)2007

    • Author(s)
      K.Hiramatsu, H.Miyake and D.Li
    • Organizer
      1st International Conference on White LEDs andSolid State Lighting
    • Place of Presentation
      東京都港区
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE法によるGaN・AIN成長の現状と課題2007

    • Author(s)
      平松和政, 劉玉懐, 三宅秀人
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学(招待講演)
    • Year and Date
      2007-09-06
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Growth of High AIN Molar Fraction AlGaN on Selective-Area-Growth GaN2007

    • Author(s)
      H. Miyake, N. Masuda, K. Hiramatsu
    • Organizer
      The Seventh International Conference on Nitride Semiconductors (ICNS-7), P2
    • Place of Presentation
      Las Vegas, Nevada, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] HVPE法によるGaN・AIN成長の現状と課題(招待講演)2007

    • Author(s)
      平松和政, 劉 玉懐, 三宅秀人
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道札幌市手稲区
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] Selective area growth of III-nitride and their application for emitting Devices2007

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Organizer
      1st International Conference on White LEDs and Solid State Lighting
    • Place of Presentation
      東京(招待講演)
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE法によるGaN・AIN成長の現状と課題(招待講演)2007

    • Author(s)
      平松 和政, 劉 玉懐, 三宅 秀人
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道札幌市手稲区
    • Year and Date
      2007-09-06
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE法によるGaN・AIN成長の現状と課題(招待講演)2007

    • Author(s)
      平松和政, 劉 玉懐, 三宅秀人
    • Organizer
      第68回応用物理学会学術講演会
    • Year and Date
      2007-09-06
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Selective area growth of III-nitride and their application for emitting Devices(招待講演)2007

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Organizer
      1st International Conference on White LEDs and Solid State Lighting
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Optical Characterization of AIGaN grown on incline-grooved AIN epilayer2006

    • Author(s)
      H. Miyake, A. Ishiga, N. Umeda, T. Shibata, M. Tanaka, K. Hiramatsu
    • Organizer
      1st International Symposium on Nitride Growth
    • Place of Presentation
      LinkoSping, Sweden
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] Blue Emission from InGaN/GaN Hexagonal Pyramid Structures2006

    • Author(s)
      H. Miyake, K. Nakao, K. Hiramatsu
    • Organizer
      6th International Conference on Physics of Light-Matter Coupling in Nanos-tructures
    • Place of Presentation
      Magdeburg, Germany
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] MOVPE growth of AlN and AlGaN multiple-quantum wells on sapphire for electron-beam-excitation UV light source

    • Author(s)
      H. Miyake, G. Nishio, S. Suzuki, F. Fukuyo, K. Hiramatsu, H. Yoshida, Y. Kobayashi, H. Fukuyama, Y. Tokumoto
    • Organizer
      International Conference on Metamaterials and Nanophysics
    • Place of Presentation
      Varadera(Cuba)
    • Year and Date
      2014-04-22 – 2014-05-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Fabrication of high quality AlN on sapphire for deep-UV-LED substrate

    • Author(s)
      H. Miyake, S. Suzuki, G. Nishio, K. Hiramatsu
    • Organizer
      ISSLED2014
    • Place of Presentation
      Kaohsiung(Taiwan)
    • Year and Date
      2014-12-14 – 2014-12-19
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Fabrication of AlN molar fraction in Si-doped AlGaN MQWs

    • Author(s)
      Kazuhiro Nakahama, Fumitsugu Fukuyo, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, and Yuji Kobayashi
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Controlling reflectance and transmittance in visible and infrared light region by using periodical metallic nano-structures

    • Author(s)
      Masanori Kito, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] GaPとAuの接触を用いた伝搬型表面プラズモンセンサーによる高屈折率液体媒質の検出

    • Author(s)
      元垣内敦司、中村将平、宮崎 潤、三宅秀人、平松和政
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 薄膜3C-SiC緩衝層を用いたSi基板上GaN成長

    • Author(s)
      片桐正義、泉 健太、三宅秀人、平松和政、奥 秀彦、浅村英俊・川村啓介
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究会
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by Low-pressure HVPE

    • Author(s)
      Shin Kitagawa, Hideto Miyake and Kazumasa HIramatsu
    • Organizer
      JSAP-MRS Joint Symosia
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlN 緩衝層のN2-CO アニールとMOVPE 法によるAlN 成長

    • Author(s)
      西尾 剛、鈴木周平、三宅秀人、平松和政、福山博之、徳本有紀、山田陽一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      名城大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Optimazation of barrier hight in AlGaN multiple quantum wells

    • Author(s)
      Kazuhiro Nakahama, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名城大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlGaN 多重量子井戸構造における格子緩和層の影響

    • Author(s)
      中濵和大,福世文嗣,三宅秀人,平松和政,吉田治正,小林祐二
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] AlGaN Growth for Electron-Beam-Excitation Ultraviolet Light Source

    • Author(s)
      H. MIYAKE, F. Fukuyo, K. Hiramatsu, Y. Kobayashi
    • Organizer
      CIMTEC2014
    • Place of Presentation
      Montecatini Terme (Italy)
    • Year and Date
      2014-06-15 – 2014-06-19
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Impact of 3C-SiC intermediate-layer thickness on growth of GaN on Si substrate

    • Author(s)
      M. Katagiri, H. Fang, H. Miyake, K. Hiramatsu, H. Asamura, K. Kawamura and H. Oku
    • Organizer
      The 6th Asia-Pacific workshop on Widegap Semiconductors (APWS2013)
    • Place of Presentation
      Fullon Hotel (台湾 台北)
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Fabrication of high quality AlN on sapphire for deep-UV-LED substrate

    • Author(s)
      H. Miyake, S. Suzuki, G. Nishio, K. Hiramatsu, H. Fukuyama
    • Organizer
      2nd Intensive Discussion on Growth of Nitride Semiconductor
    • Place of Presentation
      東北大学 (仙台)
    • Year and Date
      2014-10-30 – 2014-10-31
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Effects of threading dislocation on MOVPE growth of Si-doped AlN

    • Author(s)
      G. Nishio, H. Miyake and K. Hiramatsu
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Surface treatment of sublimation-grown AlN substrate for homo-epitaxial growth by HVPE

    • Author(s)
      Yoshinobu Watanabe, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名城大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlN成長におけるN2-COアニールによるAlN緩衝層制御

    • Author(s)
      西尾 剛、三宅秀人、平松和政、福山博之
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] スパッタ法AlNテンプレート基板を用いたAlNのHVPE成長

    • Author(s)
      安井大貴、三宅秀人、平松和政、岩谷素顕、赤﨑勇、天野浩
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlN growth on 6H-SiC substrate by low-pressure HVPE

    • Author(s)
      Shin Kitagawa, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaN自立基板のサーマルクリーニング

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍 修
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 二層型ワイヤーグリッド偏光子の特性周期及び高さ依存性

    • Author(s)
      森下 雄太、元垣内 敦司、三宅 秀人、平松和政
    • Organizer
      日本光学会年次学術講演会(OPJ2013)
    • Place of Presentation
      奈良県新公会堂
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] サファイア上AlGaN 多重量子井戸構造における格子緩和層の影響

    • Author(s)
      中濱和大、福世文嗣、三宅秀人、平松和政、吉田治正、小林祐二
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Growth of high-quality AlN on sapphire with thermally annealed AlN buffer layer in N2-CO

    • Author(s)
      H. Miyake, G. Nishio, S. Suzuki, K. Hiramatsu, and H. Fukuyama
    • Organizer
      The International Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wroclaw (Poland)
    • Year and Date
      2014-08-24 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] HVPE Homoepitaxy on Freestanding AlN Substrate with Trench Pattern

    • Author(s)
      Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu, Yosuke Iwasaki, Shunro Nagata
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta (USA)
    • Year and Date
      2014-05-19 – 2014-05-22
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

    • Author(s)
      Shunsuke Okada , Hideto Miyake, kazumasa Hiramatsu , Yuuki Enatsu and Satoru Nagao
    • Organizer
      JSAP-MRS Joint Symosia
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Improvement of Light Extraction Efficiency with Periodic Light-extraction Structures on Sapphire Substrate for Electron-beam-pumped Deep-ultraviolet Light Sources

    • Author(s)
      F. Fukuyo, H. Miyake, K. Hiramatsu, H. Yoshida, Y. Kobayashi
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名城大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Formation of atomic steps on sapphiresubstrates for AlN epitaxy

    • Author(s)
      C.-H. Lin, S. Suzuki, H. Miyake, K. Hiramatsu
    • Organizer
      ISSLED2014
    • Place of Presentation
      Kaohsiung(Taiwan)
    • Year and Date
      2014-12-14 – 2014-12-19
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] 薄膜3C-SiC緩衝層を用いたGaN成長と評価

    • Author(s)
      片桐正義、方  浩、三宅秀人、平松和政、奥 秀彦、浅村英俊,川村啓介
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE法による高品質AlGaNの成長

    • Author(s)
      三宅秀人、平松和政
    • Organizer
      CRESTパワー・先端素子半導体に関するシンポジウム
    • Place of Presentation
      北海道大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Study on AlN growth conditions for hydride vapor phase epitaxy

    • Author(s)
      Daiki YASUI, Hideto MIYAKE, Kazumasa HIRAMATSU
    • Organizer
      The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
    • Place of Presentation
      福岡大学 (福岡)
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] The Excitation of the Surface Plasmon Polariton with the GaP-Au Contact and Application to Chemical Sensors

    • Author(s)
      S. Nakamura, A. Motogaito, H. Miyake, and K. Hiramatsu
    • Organizer
      2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
    • Place of Presentation
      国立京都国際会館
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Study on the Chemical Sensor Using Excitation of the Surface Plasmon Polariton with the GaP-Au Contact

    • Author(s)
      Shohei Nakamura, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      JSAP-OSA Symposia 2013
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Fabrication of InGaN MQWs on non-polar GaN substrates

    • Author(s)
      Shunsuke Okada, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名城大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 減圧HVPE成長を用いた6H-SiC基板上へのAlN成長における核形成制御

    • Author(s)
      北川 慎、三宅秀人、平松和政
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE growth of high quality AlN film on 6H-SiC substrate using three dimensional nucleation

    • Author(s)
      Shin Kitagawa, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 6th Asia-Pacific workshop on Widegap Semiconductors (APWS2013)
    • Place of Presentation
      Fullon Hotel (台湾 台北)
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE法によるAlGaN成長とその深紫外光源への応用

    • Author(s)
      三宅秀人、平松和政 、福世文嗣、吉田治正、小林祐二
    • Organizer
      日本学術振興会「結晶加工と評価技術」第145委員会
    • Place of Presentation
      明治大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Growth and characterization of Si-doped AlN films on sapphire

    • Author(s)
      Gou Nishio, Hideto Miyake, Kazumasa Hiramatsu, Yuki Tokumoto and Ichiro Yonenaga
    • Organizer
      JSAP-MRS Joint Symosia
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Thermal treatment of HVPE-grown GaN substrate surface

    • Author(s)
      Hideto Miyake, Shunsuke Okada, Kazumasa HIramatsu,
    • Organizer
      WUPP 2014
    • Place of Presentation
      Bath (UK)
    • Year and Date
      2014-08-20 – 2014-08-22
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Effects of threading dislocation on MOVPE growth of Si-doped AlN

    • Author(s)
      G. Nishio, H. Miyake and K. Hiramatsu
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Study on Surface Thermal Stability of Free-Standing GaN Substrates

    • Author(s)
      Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu, Reina Miyagawa, Osamu Eryu, Tamotsu Hashizume
    • Organizer
      ISPlasma/IC-PLANTS
    • Place of Presentation
      名古屋大学 (名古屋)
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Study on facet structures of selective-area grown GaN on non- and semi-polar substrates

    • Author(s)
      H. Miyake, D. Jinno, S. Okada, K. Hiramatsu, Y. Enatsu and S. Nagao
    • Organizer
      The 6th Asia-Pacific workshop on Widegap Semiconductors (APWS2013)
    • Place of Presentation
      Fullon Hotel (台湾 台北)
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Fabrication of high Al content AlGaN MQWs on AlN/sapphire by MOVPE

    • Author(s)
      H. Miyake, F. Fukuyo, S. Ochiai, M. Takagi, K. Hiramatsu, H. Yoshida, Y.Kobayashi
    • Organizer
      E-MRS
    • Place of Presentation
      Strasbourg, France
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Effects of thermal cleaning on surface of free-standing GaN substrates

    • Author(s)
      Shunsuke Okada, Hideto Miyake, Kazumasa HIramatsu,
    • Organizer
      The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
    • Place of Presentation
      福岡大学 (福岡)
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Growth of thick GaN on Si substrate with 3C-SiC intermediate layer

    • Author(s)
      M. Katagiri, H. Fang, H. Miyake, K. Hiramatsu, H. Oku and H. Asamura
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Fabrication of AlGaN multiple quantum wells on sapphire with lattice-relaxation layer

    • Author(s)
      Kazuhiro Nakahama, Fumitsugu Fukuyo, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, Yuji Kobayashi
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta (USA)
    • Year and Date
      2014-05-19 – 2014-05-22
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Thermal cleaning of sublimation-grown AlN substrate for homo-epitaxial growth by HVPE

    • Author(s)
      Yoshinobu Watanabe, Gou Nishio, Hideto Miyake, Kazumasa Hiramatsu and Shunro Nagata
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlN緩衝層のN2-COアニールとMOVPE法による高温成長

    • Author(s)
      西尾 剛、鈴木周平、三宅秀人、平松和政、福山博之
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE法による周期溝加工AlN自立基板へのホモエピタキシャル成長

    • Author(s)
      渡邉祥順、三宅秀人、平松和政、岩崎洋介、永田俊郎
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE growth of high-quality AlGaN for Deep-ultraviolet Light Source

    • Author(s)
      H. Miyake, F. Fukuyo, Y. Kobayashi, K. Hiramatsu
    • Organizer
      2014 Asia Communications and Photonics Conference
    • Place of Presentation
      Shanghai(China)
    • Year and Date
      2014-11-09 – 2014-11-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Studies on growth of GaN on Si substrate with 3C-SiC buffer layer

    • Author(s)
      Masayoshi Katagiri, Hideto Miyake, Kazumasa Hiramatsu, Hidehiko Oku, Hidetoshi Asamura, and Keisuke Kawamura
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • 1.  MIYAKE Hideto (70209881)
    # of Collaborated Projects: 12 results
    # of Collaborated Products: 668 results
  • 2.  MOTOGAITO Atsushi (00303751)
    # of Collaborated Projects: 10 results
    # of Collaborated Products: 120 results
  • 3.  後藤 英雄 (00195942)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  NAOI Hiroyuki (10373101)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 5.  天野 浩 (60202694)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 6.  赤崎 勇 (20144115)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 7.  澤木 宣彦 (70023330)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 8.  WATANABE Naoya
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 8 results
  • 9.  MITO Shinya
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 11 results
  • 10.  ITO Yuusuke
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 40 results
  • 11.  Nakajima TOMOYASU
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 9 results
  • 12.  ITO Tomonori (80314136)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 13.  秋山 亨 (40362363)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 14.  正直 花奈子 (60779734)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  河村 貴宏 (80581511)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  寒川 義裕 (90327320)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  MIYAGAWA Reina
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 33 results
  • 18.  MA Bei
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 96 results
  • 19.  LIU Yuhuai
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 20.  LI Dabing
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 22 results
  • 21.  WU Jiejun
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 11 results
  • 22.  HU Weiguo
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 10 results
  • 23.  TADATOMO Kazuyuki
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  LIN Chia-Hung
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 19 results
  • 25.  HAYASHI Yusuke
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 12 results
  • 26.  XIAO Shiyu
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 27.  YOSHIZAWA Ryo
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 28.  OKADA Shyunsuke
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 7 results
  • 29.  KAWAI Shoya
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 30.  FUKUDA Ryo
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 31.  TANAKA Shuuichi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 32.  SUZUKI Shuhei
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 33.  NAKAMURA Shohei
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 34.  MIYAZAKI Jyun
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 35.  MORISHITA Yuuta
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 36.  KITO Masanori
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 37.  TSUJIMURA Kazuki
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 38.  YAMADA Taishi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 5 results
  • 39.  デートプロム ティーラデ
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 40.  橋本 雅文
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 41.  HAZU Kouji
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 42.  FUKUI Kazutoshi
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 43.  FANG H.
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 12 results
  • 44.  古澤 健太郎
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 45.  上殿 明良
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 46.  秩父 重英
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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