inokuma takao 猪熊孝夫

… Alternative Names

Researcher Number	50221784
Other IDs
External Links
Affiliation (Current)	2021: 金沢大学, 電子情報通信学系, 教授
Affiliation (based on the past Project Information) *help	2018 – 2019: 金沢大学, 電子情報通信学系, 教授 2017: 金沢大学, 電子情報学系, 教授 2005 – 2006: 金沢大学, 自然科学研究科, 助教授 2001 – 2002: 金沢大学, 自然科学研究科, 助教授 1999 – 2000: Faculty of Technology, Kanazawa University Associate professor, 工学部, 助教授 … More
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / 電子デバイス・機器工学 / Electron device/Electronic equipment / Electronic materials/Electric materials Except Principal Investigator Applied materials science/Crystal engineering / 情報通信工学 / Electronic materials/Electric materials
Keywords	Principal Investigator 薄膜 / シリコンナノ結晶 / 酸化物媒質 / フォトルミネセンス / 発光波長制御 / Si nanocrystal / Oxide matrix / Thin film / Multilayer / Plasma CVD … More Except Principal Investigator 結合構造 / シリコン窒化膜 / シリコン酸化膜 / プラズマCVD / 電荷移動モデル / ランダム結合モデル / 赤外吸収 / ストレス / Silicon nitride / Silicon oxide / Plasma CVD / Bonding Structure / Charge-transfer model / Random bonding model / Vibrational properties / Stress / 半導体レーザ / 光周波数掃引 / リフレクトメトリ / 光干渉センサ / ディジタルフィルタ / 最大エントロピー法 / 雑音 / Laser diode / Optical frequency sweep / Reflectometry / Optical interferometric sensor / Digital filter / Maximum entropy method / Noise / 多結晶シリコン / シリコン・ナノ結晶 / 結晶構造 / 界面制御 / エッチング効果 / 基板のプラズマ処理 / 一軸配向 / 表面モフォロジー / エッチングガスの添加 / 基板の表面処理 / 薄膜成長中のエッチング効果 / Poly-Si / Nano-Si / Crystal Structure / Control of Interface / Etching Effects / Plasma Treatment on Substrates / Uniaxis / Surface Morphology Less

Analyses of carrier transport properties in surface-terminated diamondPrincipal Investigator
- Principal Investigator
  
  猪熊孝夫
- Project Period (FY)
  2017 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
Fabrication and analysis of optical properties in spherical microcavity using nc-Si dispersed filmsPrincipal Investigator
- Principal Investigator
  
  INOKUMA Takao
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kanazawa University
Optical properties of the photonic crystals based on nano-crystalline-Si-dispersed films as an optically active mediumPrincipal Investigator
- Principal Investigator
  
  INOKUMA Takao
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
"Electrical and Optical Properties of Nanocrystalline-Si-Dispersed Film with Periodical Modulation of Its Layer Structure"Principal Investigator
- Principal Investigator
  
  INOKUMA Takao
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
The preparation of high quality polycrystalline Si films at low temperature using PECVD.
- Principal Investigator
  
  HASEGAWA Seiichi
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
Si超微粒子分散薄膜を用いた電界発光素子の作製と基本特性評価Principal Investigator
- Principal Investigator
  
  猪熊孝夫
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kanazawa University
Development of nondestructive diagnosis of optical circuits by using a frequency-swept light source
- Principal Investigator
  
  IIYAMA Koichi
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  情報通信工学
- Research Institution
  Kanazawa University
Analysis of the Local Bonding Structure in Silicon Nitride (Oxide) Films Deposited by Plasma-Enhanced CVD in Terms of a Charge-Transfer Model
- Principal Investigator
  
  HASEGAWA Seiichi
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kanazawa University

All 2006 2005

All Journal Article

[Journal Article] Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films2006
- Author(s)
  Azadeh Haddad Adel, Takao Inokuma, Yoshihiro Kurata, Seiichi Hasegawa
- Journal Title
  
  Surface Science Vol. 600
  
  Pages: 4418-4425
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560306
[Journal Article] Structural and photo-luminescence Properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced chemical vapor deposition2006
- Author(s)
  Atif Mossad Ali, Takao Inokuma, Seiichi Hasegawa
- Journal Title
  
  Applied Surface Science Vol.253
  
  Pages: 1198-1204
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560306
[Journal Article] Characterization of structure and role of different textures in polycrystalline Si films2005
- Author(s)
  Azadeh Haddad Adel, Takao Inokuma, Yoshihiro Kurata, Seiichi Hasegawa
- Journal Title
  
  Journal of Non-crystalline Solids Vol. 351
  
  Pages: 2107-2114
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560306

1. HASEGAWA Seiichi (10019755)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
2. IIYAMA Koichi (90202837)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

inokuma takao 猪熊 孝夫

猪熊 孝夫 イノクマ タカオ

INOKUMA Takao 猪熊 孝夫

Research Projects

Research Products

Co-Researchers

Analyses of carrier transport properties in surface-terminated diamondPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication and analysis of optical properties in spherical microcavity using nc-Si dispersed filmsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Optical properties of the photonic crystals based on nano-crystalline-Si-dispersed films as an optically active mediumPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

"Electrical and Optical Properties of Nanocrystalline-Si-Dispersed Film with Periodical Modulation of Its Layer Structure"Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

The preparation of high quality polycrystalline Si films at low temperature using PECVD.

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Si超微粒子分散薄膜を用いた電界発光素子の作製と基本特性評価Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of nondestructive diagnosis of optical circuits by using a frequency-swept light source

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Analysis of the Local Bonding Structure in Silicon Nitride (Oxide) Films Deposited by Plasma-Enhanced CVD in Terms of a Charge-Transfer Model

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Structural and photo-luminescence Properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced chemical vapor deposition2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Characterization of structure and role of different textures in polycrystalline Si films2005

Author(s)

Journal Title

Description

Data Source

inokuma takao 猪熊孝夫

猪熊孝夫イノクマタカオ

INOKUMA Takao 猪熊孝夫