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HASEGAWA Seiichi  長谷川 誠一

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… Alternative Names

長谷川 誠一

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Researcher Number 10019755
External Links
Affiliation (based on the past Project Information) *help 2002: Kanazawa Univ., Professor, 工学部, 教授
1998 – 2001: 金沢大学, 自然科学研究科, 教授
1997: 金沢大学, 工学部, 教授
1993 – 1995: 金沢大学, 工学部, 教授
1988 – 1989: Kanazawa University, Professor., 工学部, 教授
1986: 金沢大学, 工学部, 教授
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Electronic materials/Electric materials / Applied materials
Except Principal Investigator
Electronic materials/Electric materials / Applied materials science/Crystal engineering / 電子材料工学
Keywords
Principal Investigator
結合構造 / CVD / シリコン窒化膜 / シリコン酸化膜 / プラズマCVD / 電荷移動モデル / ランダム結合モデル / 赤外吸収 / ストレス / Silicon nitride … More / Silicon oxide / Plasma CVD / Bonding Structure / Charge-transfer model / Random bonding model / Vibrational properties / Stress / 多結晶シリコン / シリコン・ナノ結晶 / 結晶構造 / 界面制御 / エッチング効果 / 基板のプラズマ処理 / 一軸配向 / 表面モフォロジー / エッチングガスの添加 / 基板の表面処理 / 薄膜成長中のエッチング効果 / Poly-Si / Nano-Si / Crystal Structure / Control of Interface / Etching Effects / Plasma Treatment on Substrates / Uniaxis / Surface Morphology / 多結晶Si / プラズマ印加 / 配向性 / 表面荒れ / ド-ピング効率 / 薄膜トランジスタ / プラズマ印加効果 / 結晶軸配向 / ドーピング効率 / 伝導機構 / Polycrystalline Si / Plasma supply / Preferential orientation / Surface roughness / Doping efficiency / Thin-film transistor … More
Except Principal Investigator
薄膜 / シリコンナノ結晶 / 酸化物媒質 / フォトルミネセンス / 発光波長制御 / Si nanocrystal / Oxide matrix / Thin film / Multilayer / Plasma CVD / Light-emitting Material / 多結晶シリコン薄膜 / 三次元軸配向 / 表面観察 / 結晶粒形状 / 結晶成長 / 原子間力顕微鏡 / 多層構造 / 電気伝導度制御 / プラズマCVD / 発光材料 / 分布ブラッグ反射鏡 / 垂直光共振器 / Conductivity Control / フォトニック結晶 / Photonic Crystal / マグネトロンスパッタ / シリサイド / 傾斜機能材料 / プラズマ制御 / プラズマ発光分光分析 / 人工格子 / スパッタリング / Sputtering / Silicide / Plasma control Less
  • Research Projects

    (7 results)
  • Co-Researchers

    (6 People)
  •  Optical properties of the photonic crystals based on nano-crystalline-Si-dispersed films as an optically active medium

    • Principal Investigator
      INOKUMA Takao
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kanazawa University
  •  "Electrical and Optical Properties of Nanocrystalline-Si-Dispersed Film with Periodical Modulation of Its Layer Structure"

    • Principal Investigator
      INOKUMA Takao
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kanazawa University
  •  The preparation of high quality polycrystalline Si films at low temperature using PECVD.Principal Investigator

    • Principal Investigator
      HASEGAWA Seiichi
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kanazawa University
  •  三次元軸配向した多結晶シリコン薄膜の開発とその結晶成長メカニズムの解明

    • Principal Investigator
      狄 国慶
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kanazawa University
  •  Analysis of the Local Bonding Structure in Silicon Nitride (Oxide) Films Deposited by Plasma-Enhanced CVD in Terms of a Charge-Transfer ModelPrincipal Investigator

    • Principal Investigator
      HASEGAWA Seiichi
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kanazawa University
  •  Investigation on the Effect of in situ Plasma Supply During Growth of Polycrystalline Silicon Films by Low-Pressure Chemical Vapor Deposition, and on their Electric Conduction PropertiesPrincipal Investigator

    • Principal Investigator
      HASEGAWA Seiichi
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kanazawa University
  •  Development of new method to control composition ratio of alloy film by low temperature, high rate deposition

    • Principal Investigator
      HATA Tomonobu
    • Project Period (FY)
      1986 – 1988
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      電子材料工学
    • Research Institution
      Kanazawa University
  • 1.  INOKUMA Takao (50221784)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 2.  HATA Tomonobu (50019767)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 3.  HORITA Susumu (60199552)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  狄 国慶 (70242823)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  和佐 清孝
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  WASA Kiyotaka
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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