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HASEGAWA Seiichi
長谷川 誠一
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Alternative Names
長谷川 誠一
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Researcher Number
10019755
External Links
Affiliation (based on the past Project Information)
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2002: Kanazawa Univ., Professor, 工学部, 教授
1998 – 2001: 金沢大学, 自然科学研究科, 教授
1997: 金沢大学, 工学部, 教授
1993 – 1995: 金沢大学, 工学部, 教授
1988 – 1989: Kanazawa University, Professor., 工学部, 教授
1986: 金沢大学, 工学部, 教授
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering
/
Electronic materials/Electric materials
/
Applied materials
Except Principal Investigator
Electronic materials/Electric materials
/
Applied materials science/Crystal engineering
/
電子材料工学
Keywords
Principal Investigator
結合構造 / CVD / シリコン窒化膜 / シリコン酸化膜 / プラズマCVD / 電荷移動モデル / ランダム結合モデル / 赤外吸収 / ストレス / Silicon nitride
…
More
/ Silicon oxide / Plasma CVD / Bonding Structure / Charge-transfer model / Random bonding model / Vibrational properties / Stress / 多結晶シリコン / シリコン・ナノ結晶 / 結晶構造 / 界面制御 / エッチング効果 / 基板のプラズマ処理 / 一軸配向 / 表面モフォロジー / エッチングガスの添加 / 基板の表面処理 / 薄膜成長中のエッチング効果 / Poly-Si / Nano-Si / Crystal Structure / Control of Interface / Etching Effects / Plasma Treatment on Substrates / Uniaxis / Surface Morphology / 多結晶Si / プラズマ印加 / 配向性 / 表面荒れ / ド-ピング効率 / 薄膜トランジスタ / プラズマ印加効果 / 結晶軸配向 / ドーピング効率 / 伝導機構 / Polycrystalline Si / Plasma supply / Preferential orientation / Surface roughness / Doping efficiency / Thin-film transistor
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More
Except Principal Investigator
薄膜 / シリコンナノ結晶 / 酸化物媒質 / フォトルミネセンス / 発光波長制御 / Si nanocrystal / Oxide matrix / Thin film / Multilayer / Plasma CVD / Light-emitting Material / 多結晶シリコン薄膜 / 三次元軸配向 / 表面観察 / 結晶粒形状 / 結晶成長 / 原子間力顕微鏡 / 多層構造 / 電気伝導度制御 / プラズマCVD / 発光材料 / 分布ブラッグ反射鏡 / 垂直光共振器 / Conductivity Control / フォトニック結晶 / Photonic Crystal / マグネトロンスパッタ / シリサイド / 傾斜機能材料 / プラズマ制御 / プラズマ発光分光分析 / 人工格子 / スパッタリング / Sputtering / Silicide / Plasma control
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Research Projects
(
7
results)
Co-Researchers
(
6
People)
Project Start Year (Newest)
Project Start Year (Oldest)
Optical properties of the photonic crystals based on nano-crystalline-Si-dispersed films as an optically active medium
Principal Investigator
INOKUMA Takao
Project Period (FY)
2001 – 2002
Research Category
Grant-in-Aid for Scientific Research (C)
Research Field
Electronic materials/Electric materials
Research Institution
Kanazawa University
"Electrical and Optical Properties of Nanocrystalline-Si-Dispersed Film with Periodical Modulation of Its Layer Structure"
Principal Investigator
INOKUMA Takao
Project Period (FY)
1999 – 2000
Research Category
Grant-in-Aid for Scientific Research (C)
Research Field
Electronic materials/Electric materials
Research Institution
Kanazawa University
The preparation of high quality polycrystalline Si films at low temperature using PECVD.
Principal Investigator
Principal Investigator
HASEGAWA Seiichi
Project Period (FY)
1997 – 1999
Research Category
Grant-in-Aid for Scientific Research (B)
Research Field
Electronic materials/Electric materials
Research Institution
Kanazawa University
三次元軸配向した多結晶シリコン薄膜の開発とその結晶成長メカニズムの解明
Principal Investigator
狄 国慶
Project Period (FY)
1995
Research Category
Grant-in-Aid for General Scientific Research (C)
Research Field
Applied materials science/Crystal engineering
Research Institution
Kanazawa University
Analysis of the Local Bonding Structure in Silicon Nitride (Oxide) Films Deposited by Plasma-Enhanced CVD in Terms of a Charge-Transfer Model
Principal Investigator
Principal Investigator
HASEGAWA Seiichi
Project Period (FY)
1993 – 1994
Research Category
Grant-in-Aid for General Scientific Research (C)
Research Field
Applied materials science/Crystal engineering
Research Institution
Kanazawa University
Investigation on the Effect of in situ Plasma Supply During Growth of Polycrystalline Silicon Films by Low-Pressure Chemical Vapor Deposition, and on their Electric Conduction Properties
Principal Investigator
Principal Investigator
HASEGAWA Seiichi
Project Period (FY)
1988 – 1989
Research Category
Grant-in-Aid for General Scientific Research (C)
Research Field
Applied materials
Research Institution
Kanazawa University
Development of new method to control composition ratio of alloy film by low temperature, high rate deposition
Principal Investigator
HATA Tomonobu
Project Period (FY)
1986 – 1988
Research Category
Grant-in-Aid for Developmental Scientific Research
Research Field
電子材料工学
Research Institution
Kanazawa University
# of Projects (Dsc)
# of Projects (Asc)
1.
INOKUMA Takao
(50221784)
# of Collaborated Projects:
4 results
# of Collaborated Products:
0 results
2.
HATA Tomonobu
(50019767)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
3.
HORITA Susumu
(60199552)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
4.
狄 国慶
(70242823)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
5.
和佐 清孝
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
6.
WASA Kiyotaka
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
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