KASU Makoto 嘉数誠

Researcher Number	50393731
Other IDs
Affiliation (Current)	2025: 佐賀大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help	2018 – 2025: 佐賀大学, 理工学部, 教授 2011 – 2017: 佐賀大学, 工学(系)研究科(研究院), 教授 2012: 佐賀大学, 工学系研究科, 教授 2012: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 2010: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Electronic materials/Electric materials Except Principal Investigator Basic Section 30010:Crystal engineering-related / Medium-sized Section 30:Applied physics and engineering and related fields / Crystal engineering / Applied materials science/Crystal engineering / Nanostructural science
Keywords	Principal Investigator ダイヤモンド / パワー半導体 / ヘテロエピタキシャル成長 / ワイドギャップ半導体 / ダイヤモンド半導体 / 結晶工学 / 成長機構 / 結晶成長機構 / 転位 / シンクロトロン光 … More / パワー半導体デバイス / FET / MOS構造 / 電子素子 / 電子物性 / 電子・電気材料 / 窒化物 / 酸化物 / 半導体 / 電気・電子材料 / 電子電気材料 / キャリア伝導 … More Except Principal Investigator ダイヤモンド / 表面活性化接合 / 界面熱抵抗 / 熱処理 / 接合界面 / シリコン / 直接接合 / X線回折 / EDX / HAADF-STEM / ダイヤモンド//シリコン接合 / 立方晶SiC中間層 / ダイヤモンド//Si接合界面 / ヘテロエピタキシャル成長 / ダイヤモンド//3C-SiC接合界面 / 耐熱性 / 中間層 / 固相固相界面 / Cu / Al / Si / 界面中間層 / 熱処理効果 / ワイドギャップ半導体 / パワーデバイス / 固相・固相界面 / XPS / EELS / 常温接合 / ラマン分光顕微鏡 / 応力分布 / ダイヤモンド単結晶 / アモルファス層 / 界面 / 単結晶ダイヤモンド / 超格子 / 表面・界面物性 / 光物性 / 無転位 / ステップフリー / 窒化物半導体 / 結晶成長 / 量子井戸 / 半導体物性 / エピタキシャル成長 / 擬確率分布関数 / 光の強結合領域 / cavity-QED(共振器量子電磁力学) / (超)強結合 / 量子通信 / 量子非破壊測定 / エンタングルメント / NVセンター / 超伝導 / 超精密計測 / メゾスコピック系 / 微小共振器 / 量子メモリー / 人工原子 Less

サファイア、SiC基板上ダイヤモンドヘテロエピタキシャル成長とMOSFETへの応用Principal Investigator
- Principal Investigator
  
  嘉数誠
- Project Period (FY)
  2025 – 2029
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Saga University
Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched SubstratePrincipal Investigator
- Principal Investigator
  
  嘉数誠
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Saga University
Control of nanostructures of directly-bonded Si/diamond interfaces by annealing
- Principal Investigator
  
  重川直輝
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Osaka Metropolitan University
  Osaka City University
Fundamental Study on Cubic Diamond Heteroepitaxial Growth on Trigonal Sapphire SubstratePrincipal Investigator
- Principal Investigator
  
  Kasu Makoto
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Saga University
Direct bonding of widegap semiconductors and diamond for high-efficiency devices and investigation of bonding interface characteristics
- Principal Investigator
  
  Shigekawa Naoteru
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Osaka City University
Room temperature bonding of diamond to Si for power device application and clarification of bonding mechanism
- Principal Investigator
  
  Shigekawa Naoteru
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Osaka City University
Measurements and analysis of electronic properties and interface structure of diamond MOS structures with extremely high two-dimensional carrier concentrationPrincipal Investigator
- Principal Investigator
  
  Kasu Makoto
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saga University
Extremely high density carrier doping mechanism on diamond and application to the next generation devicesPrincipal Investigator
- Principal Investigator
  
  KASU Makoto
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saga University
Research on Quantum Memory using Superconducting Artificial Atoms
- Principal Investigator
  
  SEMBA Koichi
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Nanostructural science
- Research Institution
  National Institute of Informatics
  NTT Basic Research Laboratories
Research on step-free heterostructures of nitride semiconductors
- Principal Investigator
  
  AKASAKA Tetsuya
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NTT Basic Research Laboratories

[Book] 次世代パワーエレクトロニクスの課題と評価技術2022
- Author(s)
  嘉数　誠
- Total Pages
  15
- Publisher
  S&T出版
- ISBN
  9784907002930
- Data Source
  KAKENHI-PROJECT-23K23242
[Book] スマートフォン・タッチパネル部材の最新技術便覧2013
- Author(s)
  嘉数　誠
- Total Pages
  15
- Publisher
  技術情報協会
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] AC Stable (100 h) Operation of NO2 p-Type Doped Diamond MOSFETs2023
- Author(s)
  Niloy Chandra Saha, Tomoki Shiratsuchi, Toshiyuki Oishi, M. Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 10 Pages: 1704-1707
- DOI
  10.1109/led.2023.3305302
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography2023
- Author(s)
  S. Sdoeung, Y. Otsubo, K. Sasaki, A. Kuramata, M. Kasu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 123 Issue: 12 Pages: 123-123
- DOI
  10.1063/5.0170398
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Observation of comet-shaped defect as killer defect in halide vapor phase epitaxial (001) β-Ga2O3 and its impact on Schottky barrier diodes2023
- Author(s)
  S. Sdoeung, K. Sasaki, K Kawasaki, A. Kuramata, M. Kasu
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 62 Issue: 7 Pages: 071001-071001
- DOI
  10.35848/1347-4065/acddb6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Fast Switching NO2-doped p-Channel Diamond MOSFETs2023
- Author(s)
  Niloy Chandra Saha, Tomoki Shiratsuchi, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, and Makoto Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 5 Pages: 793-796
- DOI
  10.1109/led.2023.3261277
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] 3659-V NO2 p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates2023
- Author(s)
  Niloy Chandra Saha; Seong-Woo Kim; Koji Koyama; Toshiyuki Oishi; Makoto Kasu
- Journal Title
  
  IEEE Electron Dev. Lett.
  
  Volume: 44 Issue: 1 Pages: 112-112
- DOI
  10.1109/led.2022.3226426
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs2023
- Author(s)
  Niloy Chandra Saha, Tomoki Shiratsuchi, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, M. Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 6 Pages: 975-978
- DOI
  10.1109/led.2023.3265664
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure2023
- Author(s)
  Yuhei Seki, Niloy Chandra Saha, Seiya Shigematsu, Yasushi HOSHINO, Jyoji Nakata, Toshiyuki Oishi and Makoto Kasu
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: 4 Pages: 040902-040902
- DOI
  10.35848/1347-4065/acc70d
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes2023
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata and Makoto Kasu
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SF Pages: SF1001-SF1001
- DOI
  10.35848/1347-4065/acb0b8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Structural characterization of defects in EFG- and HVPE-grown beta-Ga2O3 crystals2022
- Author(s)
  Osamu Ueda, Makoto Kasu, Hirotaka Yamaguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 5 Pages: 050101-050101
- DOI
  10.35848/1347-4065/ac4b6b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes2022
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi, and Makoto Kasu
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 120 Issue: 12 Pages: 122107-122107
- DOI
  10.1063/5.0088284
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes2022
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, and Makoto Kasu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 120 Issue: 9 Pages: 092101-092101
- DOI
  10.1063/5.0085057
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Initial growth mechanism of high-quality CVD diamond on Ir/sapphire substrate compared with Ir/MgO substrate2022
- Author(s)
  Kasu Makoto、Takaya Ryota、Masaki Ryo、Kim Seong-Woo
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 128 Pages: 109287-109287
- DOI
  10.1016/j.diamond.2022.109287
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K21083, KAKENHI-PROJECT-23K23242
[Journal Article] Growth of high-quality inch-diameter heteroepitaxial diamond layers on sapphire substrates in comparison to MgO substrates2022
- Author(s)
  M. Kasu, R. Takaya, S. -W. Kim
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 126 Pages: 109086-109086
- DOI
  10.1016/j.diamond.2022.109086
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] 875-MW/cm2 Low-Resistance NO2 p-type Doped Chemical Mechanical Planarized Diamond MOSFETs2022
- Author(s)
  N. C. Saha, S. -W. Kim, T. Oishi, and M. Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 43 Issue: 5 Pages: 777-777
- DOI
  10.1109/led.2022.3164603
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] 3326-V Modulation-Doped Diamond MOSFETs2022
- Author(s)
  Niloy Chandra Saha , Seong-Woo Kim , Toshiyuki Oishi , and Makoto Kasu
- Journal Title
  
  IEEE Electron Dev. Lett
  
  Volume: 43 Issue: 8 Pages: 1303-1303
- DOI
  10.1109/led.2022.3181444
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography2022
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Akito Kuramata, and Makoto Kasu
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 15 Issue: 11 Pages: 111001-111001
- DOI
  10.35848/1882-0786/ac9726
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] High Crystal Quality of Vertical Bridgman and Edge-defined Film-fed Growth-Grown β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-ray Diffraction and Synchrotron X-ray Topography2022
- Author(s)
  Muhidul Islam Chaman, Keigo Hoshikawa, Sayleap Sdoeung, and Makoto Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 5 Pages: 055501-055501
- DOI
  10.35848/1347-4065/ac55e3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] 345-MW/cm2 2608-V NO2 p-type Doped Diamond MOSFETs with an Al2O3 Passivation Overlayer on Heteroepitaxial Diamond2021
- Author(s)
  Niloy Chandra Saha, Seong-Woo Kim, Toshiyuki Oishi, Yuki Kawamata, Koji Koyama, and Makoto Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 42 Issue: 6 Pages: 903-906
- DOI
  10.1109/led.2021.3075687
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Fabrication of diamond modulation-doped FETs by NO2 delta doping in an Al2 O3 gate layer2021
- Author(s)
  Makoto Kasu, Niloy Chandra Saha, Toshiyuki Oishi, and Seong-Woo Kim
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 14 Issue: 5 Pages: 051004-051004
- DOI
  10.35848/1882-0786/abf445
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (11-20) misoriented substrate by step-flow mode2021
- Author(s)
  Seong-Woo Kim, Ryota Takaya, Shintaro Hirano, and Makoto Kasu
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 11 Pages: 115501-115501
- DOI
  10.35848/1882-0786/ac28e7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes2021
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Satoshi Masuya, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, and Makoto Kasu
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 118 Issue: 17 Pages: 172106-172106
- DOI
  10.1063/5.0049761
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Polycrystalline defects; origin of leakage current; in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography2021
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 3 Pages: 036502-036502
- DOI
  10.35848/1882-0786/abde74
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Fabrication of diamond/Cu direct bonding interface for power device applications2020
- Author(s)
  S. Kanda, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, and J. Liang
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SB Pages: SBBB03-SBBB03
- DOI
  10.7567/1347-4065/ab4f19
- NAID
  210000157393
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616, KAKENHI-PROJECT-18K19034
[Journal Article] 145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer2020
- Author(s)
  Niloy Chandra Saha, Toshiyuki Oishi, Seongwoo Kim, Yuki Kawamata, Koji Koyama, Makoto Kasu
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS
  
  Volume: 41 Issue: 7 Pages: 1066-1066
- DOI
  10.1109/led.2020.2997897
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Growth of high-quality one-inch freestanding heteroepitaxial (001) diamond on (11-20) sapphire substrate2020
- Author(s)
  Seong-Woo Kim, Yuki Kawamata, Ryota Takaya, Koji. Koyama, Makoto Kasu
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 117 Issue: 20 Pages: 202102-202102
- DOI
  10.1063/5.0024070
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Observation of nitrogen species at Al2O3/NO2/H-diamond interfaces by synchrotron radiation x-ray photoemission spectroscopy2020
- Author(s)
  Niloy Chandra Saha, Kazutoshi Takahashi, Masaki Imamura, Makoto Kasu,
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 128 Issue: 13 Pages: 135702-135702
- DOI
  10.1063/5.0024040
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high　sensitive emission microscopy2020
- Author(s)
  Sayleap Sdoeung , Kohei Sasaki , Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi , Makoto Kasu
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 117 Issue: 2 Pages: 022106-022106
- DOI
  10.1063/5.0012794
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Characterization of crystalline defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography2019
- Author(s)
  S. Masuya, K. Sasaki, A. Kuramata, S. Yamakoshi, O. Ueda, and M. Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 5 Pages: 055501-055501
- DOI
  10.7567/1347-4065/ab0dba
- NAID
  210000155651
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] パワー半導体デバイス応用を目指したダイヤモンド，酸化ガリウムのシンクロトロンX 線トポグラフィー観察2019
- Author(s)
  嘉数　誠、桝谷聡士
- Journal Title
  
  放射光学会
  
  Volume: 32 Pages: 285-291
- NAID
  40022119154
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on β-Ga2O32017
- Author(s)
  M. Kasu, T. Oshima, K. Hanada, T. Moribayashi, A. Hashiguchi, T. Oishi, K. Koshi, K. Sasaki, A. Kuramata, and O. Ueda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Pages: 091101-091101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Realization of direct bonding of single crystal diamond and Si substrates2017
- Author(s)
  J. Liang, S. Masuya, M. Kasu, and N. Shigekawa
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 110 Pages: 111603-111603
- NAID
  120006453318
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Determination of partial dislocations of stacking fault in (111) single crystal diamond grown on (111) seed crystal by synchrotron X-ray topography2017
- Author(s)
  S. Masuya, K. Hanada, T. Moribayashi, H. Sumiya, M. Kasu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 468 Pages: 439-442
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector2017
- Author(s)
  A. Boussadi, A. Tallaire, M. Kasu, J. Barjon, J. Achard
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 83 Pages: 162-169
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna2017
- Author(s)
  Toshiyuki Oishi, Naoto Kawano, Satoshi Masuya, and Makoto Kasu
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS
  
  Volume: 38 Issue: 1 Pages: 87-90
- DOI
  10.1109/led.2016.2626380
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03977, KAKENHI-PROJECT-15K05990
[Journal Article] Diamond Field-effect transistors for RF power electronics: Novel NO2 hole doping and low-temperature deposited Al2O3 passivation2017
- Author(s)
  Makoto Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects2017
- Author(s)
  T. Oshima, A. Hashiguchi, T. Moribayashi, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, T. Oishi, and M. Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Pages: 086501-086501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Formation of stacking fault and dislocation behavior during the high temperature annealing of single-crystal HPHT diamond2017
- Author(s)
  S. Masuya, K. Hanada, T. Oshima, H. Sumiya, M. Kasu
- Journal Title
  
  Dia. Rel. Mater.
  
  Volume: 75 Pages: 155-160
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] β-Ga2O3結晶中の欠陥とSBD素子特性への影響2017
- Author(s)
  嘉数　誠
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 44
- NAID
  130006327991
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Diamond Schottky barrier diodes with NO2 exposed surface and RF-DC conversion toward high power rectenna2017
- Author(s)
  T. Oishi, N. Kawano, S. Masuya, and M. Kasu
- Journal Title
  
  IEEE Electon Dev. Lett.
  
  Volume: 38 Pages: 87-87
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Observation of nanometer-sized crystalline grooves in as-grown β-Ga2O3 single crystals2016
- Author(s)
  K. Hanada, T. Moribayashi, T. Uematsu, S. Masuya, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, and M. Kasu.
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 3 Pages: 030303-030303
- DOI
  10.7567/jjap.55.030303
- NAID
  210000146118
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390057, KAKENHI-PROJECT-15H03977
[Journal Article] Estimation method of solar cell temperature using meteorological data in mega solar power plant2016
- Author(s)
  S. Hara, M. Kasu, and N. Matsui
- Journal Title
  
  IEEE Journal of Photovoltaics
  
  Volume: 6. Pages: 1255-1255
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes2016
- Author(s)
  M. Kasu, K. Hanada, T. Moribayashi, A. Hashiguchi, T. Oshima, T. Oishi, K. Koshi, K. Sasaki, A. Kuramata, and O. Ueda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202BB-1202BB
- DOI
  10.7567/jjap.55.1202bb
- NAID
  210000147271
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03977, KAKENHI-PROJECT-26390057
[Journal Article] Conduction mechanism in highly doped β-Ga2O3 (-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes2016
- Author(s)
  Toshiyuki Oishi, Kazuya Harada, Yuta Koga, and Makoto Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 3 Pages: 030305-030305
- DOI
  10.7567/jjap.55.030305
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K05990, KAKENHI-PROJECT-15H03977
[Journal Article] Structural evaluation of defects in beta-Ga2O3 single crystals grown by edge-defined film-fed growth process2016
- Author(s)
  O. Ueda N. Ikenaga, K. Koshi, K. Iizuka, A. Kuramata, K. Hanada, T. Moribayashi, S. Yamakoshi, and M. Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202BD-1202BD
- DOI
  10.7567/jjap.55.1202bd
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03977, KAKENHI-PROJECT-26390057
[Journal Article] Formation of indium-tin oxide ohmic contacts for β-Ga2O32016
- Author(s)
  T. Oshima, R. Wakabayashi, M. Hattori, A. Hashiguchi, N. Kawano, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo, T. Oishi, M. Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202B7-1202B7
- DOI
  10.7567/jjap.55.1202b7
- NAID
  210000147267
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H03881, KAKENHI-PROJECT-15H03977, KAKENHI-PROJECT-16J09832, KAKENHI-PROJECT-26709020, KAKENHI-PROJECT-16K13673
[Journal Article] Origins of etch-pits in (010) β-Ga2O3 single crystals2016
- Author(s)
  K Hanada, T. Moribayashi, K. Koshi, K. Sasaki, A. Kuramata, O. Ueda, and M. Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202BG-1202BG
- DOI
  10.7567/jjap.55.1202bg
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Diamond epitaxy: basics and applications2016
- Author(s)
  Makoto Kasu
- Journal Title
  
  Progress in Crystal Growth and Characterization of Materials
  
  Volume: 62 Pages: 317-317
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Study on capacitance–voltage characteristics of diamond field-effect transistors with NO2 hole doping and Al2O3 gate insulator layer2016
- Author(s)
  M. Kasu, K. Hirama, K. Harada, and T. Oishi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4 Pages: 041301-041301
- DOI
  10.7567/jjap.55.041301
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Determination of the type of stacking faults in single-crystal high-purity diamond with a low dislocation density of < 50 cm−2 by synchrotron X-ray topography2016
- Author(s)
  S. Masuya, K. Hanada, T. Uematsu, T. Moribayashi, H. Sumiya, and M. Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4 Pages: 040303-040303
- DOI
  10.7567/jjap.55.040303
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03977
[Journal Article] Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy2014
- Author(s)
  K. Takahashi, M. Imamura, K. Hirama, and M. Kasu
- Journal Title
  
  APPLIED PHYSICS LETTERS
  
  Volume: 104 Issue: 7 Pages: 72101-72101
- DOI
  10.1063/1.4865929
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] Synchrotron X-ray topography of dislocations in high-pressure high-temperature-grown2014
- Author(s)
  M. Kasu, R. Murakami, S. Masuya, K. Harada, and H. Sumiya
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 12 Pages: 125501-125501
- DOI
  10.7567/apex.7.125501
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] High-mobility β-Ga2O3(-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact2014
- Author(s)
  T. Oishi, Y. Koga, K. Harada, M. Kasu
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 3 Pages: 031101-031101
- DOI
  10.7567/apex.8.031101
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] Maximum bole concentration for Hydrogen-terminated diamond surfaces with various surface orientaions obtained by exposure to highly concentrated NO22013
- Author(s)
  H. Sato and M. Kasu
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 31 Pages: 47-49
- DOI
  10.1016/j.diamond.2012.10.007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule2013
- Author(s)
  Y. Takagi, K. Shiraishi, M. Kasu, H. Sato
- Journal Title
  
  Surface Science
  
  Volume: 609 Pages: 203-206
- DOI
  10.1016/j.susc.2012.12.015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] ダイヤモンド結晶成長:パワーデバイス応用への現状と課題2013
- Author(s)
  嘉数誠、平間一行、佐藤寿志
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 39 Pages: 6-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] CVD単結晶ダイヤモンドの異常成長粒子,転位,不純物ドーピングの機構2013
- Author(s)
  嘉数誠
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 39(招待論文) Pages: 33-43
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy2013
- Author(s)
  T. Akasaka, Y. Kobayashi, M. Kasu, H. Yamamoto
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 6 Issue: 10 Pages: 105501-105501
- DOI
  10.7567/apex.6.105501
- NAID
  40019840892
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond2012
- Author(s)
  K. Hirama, M. Kasu, and Y. Taniyasu
- Journal Title
  
  IEEE Electron Device Lett
  
  Volume: 33 Issue: 4 Pages: 513-515
- DOI
  10.1109/led.2012.2185678
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] Diamond Field-Effect Transistors with 1. 3A/mm Drain Current Density by Al2O3 Passivation Layer2012
- Author(s)
  K. Hirama. H. Sato, Y. Harada, H. Yamamoto, and M. Kasu
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 51 Issue: 9R Pages: 90112-90112
- DOI
  10.1143/jjap.51.090112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] NO2及びO3吸着による水素終端ダイヤモンド表面の正孔ドーピング2012
- Author(s)
  嘉数誠、佐藤寿志、M. Kubovic
- Journal Title
  
  表面科学
  
  Volume: 33(招待論文) Pages: 575-582
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] Thermally Stable Operation of H-Terminated Diamond FETs by NO2 Adsorption and Al2O3 Passivation2012
- Author(s)
  K. Hirama, H. Sato, Y. Harada, and H. Yamamoto. and M. Kasu
- Journal Title
  
  IEEE Electroi Device Lett.
  
  Volume: 33 Issue: 8 Pages: 1111-1113
- DOI
  10.1109/led.2012.2200230
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface2012
- Author(s)
  K. Hirama, Y. Taniyasu, and M.Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 9R Pages: 90114-90114
- DOI
  10.1143/jjap.51.090114
- NAID
  210000141158
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond2011
- Author(s)
  Xiaobo Zhu, Shiro Saito, Alexander Kemp, Kosuke Kakuyanagi, Shin-ichi Karimoto, Hayato Nakano, William J.Munro, Tasuhiro Tokura, Mark S.Everitt, Kae Nemoto, Makoto Kasu, Norikazu Mizuochi, Kouichi Semba
- Journal Title
  
  Nature
  
  Volume: 478(7368) Issue: 7368 Pages: 221-224
- DOI
  10.1038/nature10462
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09F09770, KAKENHI-PLANNED-21102002, KAKENHI-PLANNED-21102003, KAKENHI-PUBLICLY-22102502, KAKENHI-PROJECT-22241025, KAKENHI-PROJECT-23681017
[Journal Article] Semba:"Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond"2011
- Author(s)
  X. Zhu, S. Saito, A. Kemp, K. Kakuyanagi, S. Karimoto, H. Nakano, W. J. Munro, Y. Tokura, M. S. Everitt, K. Nemoto, M. Kasu, N. Mizuochi, and K. Semba
- Journal Title
  
  Nature
  
  Volume: Volume 478 Pages: 221-224
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22241025
[Journal Article] 表面過飽和度制御によるGaN ステップフリー面の形成2011
- Author(s)
  赤坂哲也、小林康之赤坂哲也、小林康之、嘉数誠
- Journal Title
  
  日本結晶成長学会論文誌
  
  Volume: Vol. 38 Pages: 221-226
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] 表面過飽和度制御によるGaNステップフリー面の形成2011
- Author(s)
  赤坂哲也, 小林康之, 嘉数誠
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: Vol.38 No.4 Pages: 221-226
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Nucleus and spiral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol. 3 Pages: 75602-75602
- NAID
  10026495564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Nucleus and spiral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10026495564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol. 97 Pages: 141902-141902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Patent] 知的財産権2018
- Inventor(s)
  梁剣波、重川直輝、嘉数誠
- Industrial Property Rights Holder
  梁剣波、重川直輝、嘉数誠
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2018-094186
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-18K19034
[Patent] ダイヤモンドコンタクト構造とこれを用いた電子素子2016
- Inventor(s)
  嘉数　誠
- Industrial Property Rights Holder
  嘉数　誠
- Industrial Property Rights Type
  特許
- Filing Date
  2016
- Acquisition Date
  2018
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Diamond High Power and Voltage MOSFETs: Physics, Fabrication, Static and Dynamic Characterization2024
- Author(s)
  M, Kasu、Niloy, Chandra Saha
- Organizer
  ISPlasma2024 / IC-PLANTS2024 / APSPT-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンド半導体の最近の進展～パワー半導体デバイスと大口径ウェハ～2024
- Author(s)
  嘉数　誠
- Organizer
  映像情報メディア学会
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] (001)面方位HVPEエピ厚膜ベータ型酸化ガリウムショットキーバリアダイオードの多結晶欠陥列のエミッション顕微鏡観察2024
- Author(s)
  大坪優斗, 佐々木公平, 有馬　潤, 藤田　実, 川崎克己, 倉又朗人, 嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] パワー半導体に向けたダイヤモンドMOSFETの最近の進展2024
- Author(s)
  嘉数　誠
- Organizer
  応用物理学会電子デバイス界面研究会
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドMOSFETの高電圧(105V) スイッチング動作2024
- Author(s)
  白土智基，ニロイ　チャンドラ　サハ, 大石敏之, 嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドパワー半導体開発の現状2024
- Author(s)
  嘉数　誠
- Organizer
  エレトロニクス実装学会「部品内蔵技術委員会技術調査研究会公開研究会『パワーデバイスと関連技術』」
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドの最近の進展：パワー半導体と大口径ウェハの開発2023
- Author(s)
  嘉数　誠
- Organizer
  機械学会「第14 回マイクロ・ナノ工学シンポジウム」
- Invited
- Data Source
  KAKENHI-PROJECT-23K21083
[Presentation] ダイヤモンドMOSFETの長時間(190h)ストレス特性2023
- Author(s)
  白土智基・Niloy Saha・Seongwoo Kim・小山浩司・大石敏之・嘉数　誠
- Organizer
  電子通信情報学会総合大会C-10-7、さいたま、2023年3月9日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドNO2 p 型ドープMOSFET の長時間(100h)AC ストレス測定2023
- Author(s)
  白土智基，ニロイチャンドラサハ, 大石敏之, 嘉数誠
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] (011)面方位 HVPEβ型酸化ガリウムショットキーバリアダイオードの高感度エミッション顕微鏡とシンクロトロンＸ線トポグラフィによるキラー欠陥の同定2023
- Author(s)
  大坪優斗、スダーンセイリープ、佐々木公平、倉又朗人、嘉数誠
- Organizer
  15p-E102-16、2023年第70回応用物理学会春季学術講演会、東京、2023年3月15日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 究極のパワー半導体「ダイヤモンド」デバイスとウェハの最近の進展2023
- Author(s)
  嘉数　誠
- Organizer
  精密工学会プラナリゼーション CMP とその応用技術専門委員会第 208 回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドパワー半導体デバイス技術の現状2023
- Author(s)
  嘉数　誠
- Organizer
  SEMICON「STSパワーデバイスセッション、飛躍するパワーデバイスの技術と応用最前線」
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンド半導体－Beyond5G, EV, 宇宙応用を目指した次世代パワー半導体－2023
- Author(s)
  嘉数　誠
- Organizer
  日本学術会議（招待）、佐賀、2023年3月14日
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンド半導体デバイスの作製技術と高性能化2023
- Author(s)
  嘉数　誠
- Organizer
  技術情報協会（招待）、東京、2023年1月16日
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドMOSFET の高速(<10ns)スイッチング特性2023
- Author(s)
  ニロイチャンドラサハ, 白土智基，金聖祐, 小山浩司, 大石敏之, 嘉数誠
- Organizer
  17a-A301-8、2023年第70回応用物理学会春季学術講演会、東京、2023年3月17日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] パワー半導体に向けたダイヤモンドFETとインチ径ダイヤウェハの最近の進展2023
- Author(s)
  ]嘉数　誠
- Organizer
  電子通信情報学会総合大会（招待）CI-4-4、さいたま、2023年3月9日
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンド半導体デバイスの作製とインチ径ウェハの成長メカニズム2023
- Author(s)
  嘉数　誠
- Organizer
  ナノ科学シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドパワー半導体デバイスの作製とデバイス応用に向けた課題2023
- Author(s)
  嘉数　誠
- Organizer
  技術情報協会
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ヘテロエピタキシャルダイヤモンド放射線検出器のα線特性2023
- Author(s)
  入江優雅, 人見啓太朗, 野上光博，金聖祐，小山浩司，ニロイチャンドラサハ, 嘉数誠
- Organizer
  16a-D311-10, 2023年第70回応用物理学会春季学術講演会、東京、2023年3月16日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 宇宙応用に向けたダイヤモンド半導体パワーデバイスの開発2023
- Author(s)
  嘉数　誠
- Organizer
  マイクロ波無線送電技術ビジネス化研究会
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] (011)面方位HVPE beta型酸化ガリウムショットキーバリアダイオードの多結晶欠陥の断面STEM 観察2023
- Author(s)
  スダーンセイリープ, 佐々木公平, 倉又朗人, 嘉数誠
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドパワー半導体デバイス技術の現状2023
- Author(s)
  嘉数　誠
- Organizer
  パワーエレクトロニクス学会
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンド半導体2023
- Author(s)
  嘉数　誠
- Organizer
  トランジスタ技術ミニセミナー
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Misorientation Angle of Heteroepitaxial Diamond on Sapphire Misoriented Substrate2023
- Author(s)
  JACQUES DAGBETO, Koji Koyama, Seongwoo Kim, Makoto Kasu
- Organizer
  15a-A408-8、2023年第70回応用物理学会春季学術講演会、東京、2023年3月15日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンド半導体－Beyond5G, EV, 宇宙応用を目指した次世代パワー半導体－2023
- Author(s)
  嘉数　誠
- Organizer
  電子情報産業協会（JEITA）電気部品委員会機構（招待）、オンライン、2023年3月24日
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドMOSFETの高速(<10ns)スイッチング動作2023
- Author(s)
  白土智基・Niloy Saha・Seongwoo Kim・・大石敏之・嘉数　誠
- Organizer
  電子通信情報学会総合大会C-10-6、さいたま、2023年3月9日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンド半導体デバイスの基礎知識とそのポテンシャル、今後の課題～原理・物性の理解と大口径ウェハ化、デバイスの作製技術・高性能化～2023
- Author(s)
  嘉数　誠
- Organizer
  サイエンスアンドテクノロジー
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Present status of Diamond Semiconductors2023
- Author(s)
  Makoto Kasu
- Organizer
  次世代グリーンパワー技術における最先端研究、（招待）、横浜、2023年3月22日
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 放射光X 線トポグラフィーによるEFG (001) β-Ga2O3 の部分転位に関連する積層欠陥の観察2023
- Author(s)
  Sayleap Sdoeung、Yuto Ostubo、Kohei Sasaki、Chia-Hung Lin、Akito Kuramata、Makoto Kasu
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンド NO2ドープMOSFET の研究開発の現状2023
- Author(s)
  嘉数　誠
- Organizer
  応用物理学会応用電子分科会
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドMOSFETの最近の進展～次世代パワーデバイスへの道を拓く～2023
- Author(s)
  嘉数　誠
- Organizer
  サタディプラズマ
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドMOSFET の長時間(190h)ストレス測2023
- Author(s)
  ニロイチャンドラサハ, 白土智基，金聖祐, 小山浩司, 大石敏之, 嘉数誠
- Organizer
  17a-A301-9、2023年第70回応用物理学会春季学術講演会、東京、2023年3月17日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドの最近の進展：パワー半導体と大口径ウェハの開発2023
- Author(s)
  嘉数　誠
- Organizer
  機械学会「第 14 回マイクロ・ナノ工学シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンド半導体デバイスの作製とインチ径ウェハの成長メカニズム2023
- Author(s)
  嘉数　誠
- Organizer
  日本テクノセンター「次世代パワー半導体の基礎と最新動向」
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 未来型ダイヤモンド半導体の実用化に向けて―佐大から宇宙へ―2023
- Author(s)
  嘉数　誠
- Organizer
  TSUNAGIシンポジウム（招待）、佐賀、2023年3月18日
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 2インチ径ダイヤモンドCVD成長の機構と課題2022
- Author(s)
  嘉数　誠
- Organizer
  化学工学会CVD反応分科会
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] High Quality Vertical Bridgman and Edge-Defined Film-Fed Growth β-Ga2O3 Bulk Crystal Investigated Using High-Resolution X-Ray Diffraction and Synchrotron X-Ray Topography2022
- Author(s)
  Muhidul Islam Chaman, Keigo Hoshikawa, Sayleap Sdoeung, and Makoto Kasu
- Organizer
  The 4th International Workshop on Gallium Oxide and Related Materials (IWGO 2022) Nanano, October 23-27, 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] インチ径高品質CVDダイヤモンドエピ膜の成長初期過程－サファイア基板とMgO基板の比較－2022
- Author(s)
  眞崎瞭，高谷亮太，小山浩司，金聖祐，嘉数誠
- Organizer
  秋季応用物理学会、仙台、2022年9月20－23日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 3659 V 0.37 A/mm NO2-doped p-channel Diamond MOSFETs fabricated on diamond grown on misoriented sapphire substrates2022
- Author(s)
  Niloy Chandra Saha, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, and Makoto Kasu
- Organizer
  The 2022 Materials Research Society (MRS) Fall Meeting, Nov. 27- Dec. 2, 2022, Boston
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 820 MW/cm2 0.42 A/mm 3326 V 選択ドーピダイヤモンドMOSFET2022
- Author(s)
  ニロイチャンドラサハ, 金聖祐,　大石敏之, 嘉数誠
- Organizer
  2022年秋季応用物理学会、相模原、22p-E302-9、2022年3月22-26日
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] N フリーヘテロエピタキシャルダイヤモンドの成長2022
- Author(s)
  金聖祐，高谷亮太 , 平野慎太郎, 川又友喜, 小山浩司, 嘉数誠
- Organizer
  2022年秋季応用物理学会、相模原、25a-E204-9、2022年3月22-26日
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ダイヤモンドパワーFETと大口径ウエファーの最近の進展2022
- Author(s)
  嘉数誠
- Organizer
  日本学術振興会第161委員会第117 回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 875 MW/cm2 NO2-p-Type-Doped Diamond MOSFETs2022
- Author(s)
  Makoto Kasu, Niloy Chandra Saha, Seong-Woo Kim, and Toshiyuki Oishi,
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022), Marid, Sep 4-8, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ヘテロエピタキシャルダイヤモンド放射線検出器の作製2022
- Author(s)
  入江優雅, 人見啓太朗, 野上光博, 中山隼，金聖祐，小山浩司，ニロイチャンドラサハ, 嘉数誠
- Organizer
  秋季応用物理学会、仙台、2022年9月20－23日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Diamond Semiconductor; Inch‐Wafer Growth and Power FET Technologies2022
- Author(s)
  Makoto Kasu
- Organizer
  The 54th International Conference on Solid State Devices and Materials (SSDM 2022) Short Course (Invited), Makuhari, Sep 26, 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Microstructural Characterization of β-Ga2O3 Crystals by Photoluminescence Mapping Measurements2022
- Author(s)
  K. Shoji, M. Nakanishi, M. Kasu, T. Yamaguchi, T. Honda, K. Sasaki, A. Kuramata, and T. Onuma
- Organizer
  The 4th International Workshop on Gallium Oxide and Related Materials (IWGO 2022) Nagano, October 23-27, 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Crystal Defects and Lattice Constants of High-Quality β-Ga2O3 Edge-Defined Film-Fed Grown Single Crystals Studied by Synchrotron X-ray Topography and High-Resolution X-Ray Diffractions2022
- Author(s)
  Muhidul Islam Chaman, Sayleap Sdoeung, and Makoto Kasu
- Organizer
  The 4th International Workshop on Gallium Oxide and Related Materials (IWGO 2022) Nanano, October 23-27, 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Observation of Reverse Leakage Current in (001) Halide Vapor Phase Epitaxial (HVPE)-grown b-Gallium Oxide Schottky Barrier Diodes by High Sensitive Emission Microscope2022
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, and Makoto Kasu
- Organizer
  1st International Workshop on Diamond Devices, Saga, Feb 21-22, 2022.
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 傾斜サファイア基板上に成長したダイヤモンドウェハの高品質化2022
- Author(s)
  ジャックダグベト，小山浩司，嘉数誠，金聖祐
- Organizer
  秋季応用物理学会、仙台、2022年9月20－23日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 精密 X 線回折法による高品質 EFG β-Ga2O3単結晶の格子定数の決定2022
- Author(s)
  ムヒドゥルイスラムチャマン , スダーンセイリープ ,嘉数誠
- Organizer
  2022年秋季応用物理学会、相模原、26p-E202-13、2022年3月22-26日
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ダイヤモンドパワー半導体デバイスの作製とデバイス応用に向けた課題2022
- Author(s)
  嘉数　誠
- Organizer
  技術情報協会　(招待) 2022年9月15日
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 875 MW/cm2 2568 V 0.68A/mm NO2 ドープダイヤモンドMOSFET2022
- Author(s)
  ニロイチャンドラサハ , 金聖祐, 大石敏之 , 嘉数誠
- Organizer
  2022年秋季応用物理学会、相模原、22p-E302-10、2022年3月22-26日。
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ダイヤモンドパワー半導体デバイス2022
- Author(s)
  嘉数　誠
- Organizer
  菱実会　(招待) 2022年9月17日
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Recent Progress of High-Voltage High-Power Diamond MOSFETs2022
- Author(s)
  Makoto Kasu and Niloy Chandra Saha
- Organizer
  1st International Workshop on Diamond Devices, Saga, Feb 21-22, 2022.
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 3659 V, 0.37 A /mm微傾斜ダイヤモンド上に作製したNO2ドープダイヤモンドMOSFET2022
- Author(s)
  ニロイチャンドラサハ, 金聖祐, 小山浩司, 大石敏之, 嘉数誠
- Organizer
  秋季応用物理学会、仙台、2022年9月20－23日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 垂直 VB 成長と EFG 成長(001) β-Ga2O3 結晶の X 線トポグラフィー観察2022
- Author(s)
  ムヒドゥルイスラムチャマン, 干川圭吾 , スダーンセイリープ , 嘉数誠
- Organizer
  2022年秋季応用物理学会、相模原、26p-E202-14、2022年3月22-26日
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Growth of high-quality inch-diameter heteroepitaxial diamond layers on Sapphire substrates in comparison to MgO substrates2022
- Author(s)
  R. Takaya, S-W. Kim, M. Kasu
- Organizer
  1st International Workshop on Diamond Devices, Saga, Feb 21-22, 2022
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 820 MW/cm2 0.42 A/mm 3326 V modulation-doped diamond MOSFET2022
- Author(s)
  Niloy Chandra Saha, Seong Woo Kim, Toshiyuki Oishi, Makoto Kasu
- Organizer
  15th International Conference on New Diamond and Nano Carbons (NDNC 2022), Kanazawa, June 6-9, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] High On/Off Rectification Ratio of Diamond Schottky Barrier Diode Fabricated by All-Ion-Implantation Doping2022
- Author(s)
  N. C. Saha, Irie, Seki, Nakata, Hoshino, S. -W. Kim, T. Oishi, and M. Kasu
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022), Marid, Sep 4-8, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Dislocation Responsible for Leakage Current in HVPE (001) β-Ga2O3 SBD Observed by Emission Microscopy and Synchrotron X-ray Topography2022
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, and Makoto Kasu
- Organizer
  The 4th International Workshop on Gallium Oxide and Related Materials (IWGO 2022) Nanano, October 23-27, 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] B イオン注入のみで作製したダイヤモンドショットキーバリアダイオード2022
- Author(s)
  関裕平，重松誠也, 大石敏之, 嘉数誠, 星野靖, 中田穣治、
- Organizer
  秋季応用物理学会、仙台、2022年9月20－23日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 究極の半導体ダイヤモンドの大口径ウェハとパワーデバイスの最近の進展(招待)2022
- Author(s)
  嘉数　誠
- Organizer
  令和3年度ナノ・マイクロ技術支援講座（ナノ茶論）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Growth mechanism of high-quality inch-diameter diamond layers on sapphire substrates in comparison to MgO substrates2022
- Author(s)
  Makoto Kasu, Ryota Takaya, Ryo Masaki, and Seong-Woo Kim
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022), Marid, Sep 4-8, 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] インチ径高品質CVDダイヤモンドエピ膜の成長初期過程の観察－サファイア基板とMgO基板の比較－2022
- Author(s)
  嘉数誠，眞崎瞭，高谷亮太，小山浩司，金聖祐
- Organizer
  第51回結晶成長国内会議（JCCG-51）、2022年10月31日－11月2日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Defects responsible for leakage current in β-Ga2O3 Schottky barrier diodes observed by ultrahigh sensitive emission microscopy and synchrotron X-ray topography2022
- Author(s)
  Makoto Kasu, Sayleap Sdoeung, Kohei Sasaki, and Akito Kuramata
- Organizer
  The 10th Asia-Pacific Workshop on Widegap Semiconductors 2022 (APWS2022), Taoyuan, Taiwan, November 13-18, 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Growth Mechanism of 2-Inch High-Quality Heteroepitaxial Diamond Free-Standing Wafers on Sapphire for High-Power Diamond FETs2022
- Author(s)
  Makoto Kasu, Seong-Woo Kim, Ryota Takaya, and Niloy Saha Chandra,
- Organizer
  Materials Research Society (MRS) Spring Meeting, EQ01.16.06, On-line, May 8, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 究極のパワー半導体『ダイヤモンド』2022
- Author(s)
  嘉数　誠
- Organizer
  佐賀県高校科学部研修会（招待）、佐賀、2022年8月20日
- Invited
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Fabrication and Electrical properties for diamond Schottky Barrier Diodes with small area Schottky electrode using All-Ion-Implantation Process2022
- Author(s)
  S. Shigematsu, Y. Seki, Y. Hoshino, J. Nakata, T. Oishi, and M. Kasu
- Organizer
  1st International Workshop on Diamond Devices, Saga, Feb 21-22, 2022
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 875 MW/cm2 2568 V 0.68 A/mm NO2 P-type Doped Diamond MOSFETs2022
- Author(s)
  N. C. Saha, S-W. Kim, T. Oishi, and M. Kasu
- Organizer
  15th International Conference on New Diamond and Nano Carbons (NDNC 2022), Kanazawa, June 6-9, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Two-inch diamond wafer with high FOM for use in MOSFET2022
- Author(s)
  Makoto Kasu, Seoeng-Woo Kim
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022), (Invited) Aug 29- Sep 1, 2022.
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 高感度エミッション顕微鏡によるHVPE (001)β型酸化ガリウムSBDのリーク電流の起源の同定ー研磨による表面キズ2022
- Author(s)
  スダーンセイリープ、シャーマンイスラム, 桝谷聡士, 佐々木公平, 川崎克己, 平林潤, 倉又朗人, 嘉数誠
- Organizer
  2022年秋季応用物理学会、相模原、25p-E202-10、2022年3月22-26日
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Growth process of high-quality 2-in-diameter CVD diamond on Ir/sapphire substrate compared with Ir/MgO substrate2022
- Author(s)
  Makoto Kasu, Ryo Masaki, Koji Koyama, and Seong-Woo Kim
- Organizer
  The 2022 Materials Research Society (MRS) Fall Meeting, Nov. 27- Dec. 2, 2022, Boston
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Structural Characterization of Vertical-Bridgman and Edge-Defined Film-Fed Growth β-Ga2O3 Single Crystal Wafers by High-resolution X-ray Diffraction and Synchrotron X-ray Topography2022
- Author(s)
  Chaman Islam, Sayleap Sdoeung, and Makoto Kasu
- Organizer
  1st International Workshop on Diamond Devices, Saga, Feb 21-22, 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 「ステップフローを用いたダイヤモンド2インチ径ヘテロウェハ成長と選択ドーピングしたダイヤモンドFETの開発」（招待）2022
- Author(s)
  嘉数誠、金聖祐
- Organizer
  独立行政法人　日本学術振興会　第R032委員会　第5回研究会 2022年1月7日（金）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Recent progress of NO2 p-type doped diamond MOSFET and heteroepitaxial diamond wafer technologies2022
- Author(s)
  Makoto Kasu, Seong-Woo Kim
- Organizer
  The 10th Asia-Pacific Workshop on Widegap Semiconductors 2022 (APWS2022), Taoyuan, Taiwan, November 13-18, 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] インチ径高品質CVDダイヤモンドエピ膜の格子歪発生のメカニズム－サファイア基板とMgO基板の比較－2022
- Author(s)
  嘉数誠，眞崎瞭，高谷亮太，小山浩司，金聖祐
- Organizer
  第51回結晶成長国内会議（JCCG-51）、2022年10月31日－11月2日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 3326 V 0.42 A/mm Modulation-Doped Diamond MOSFETs Fabricated via NO2 Delta Doping in Al2O3 Gate Layer2022
- Author(s)
  M. Kasu, N.C. Saha, S.-W. Kim, and T. Oishi
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022), Marid, Sep 4-8, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 影が太陽光モジュールの発電量に与える影響のメカニズム2021
- Author(s)
  高治広行、嘉数誠、吉岡達也
- Organizer
  2021年電気・情報関係学会九州支部第74回連合大会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ダイヤモンド大口径ウェハおよびパワートランジスターの最近の進展2021
- Author(s)
  嘉数　誠、金　聖祐
- Organizer
  耐放射線デバイス研究会、鳥栖、2021年10月8日（招待）
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] High Current (776 mA/mm) and High Voltage (618 V) Operation of Heteroepitaxial Diamond FETs with NO2 Doping2021
- Author(s)
  Niloy Chandra Saha, Seong-Woo Kim, Toshiyuki Oishi, Yuki Kawamata, Koji Koyama, Makoto Kasu
- Organizer
  New Diamond and Nano Carbons 2020/2021, online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] サファイア基板上大口径・高品質ヘテロエピタキシャルダイヤモンドの成長機構2021
- Author(s)
  嘉数誠、高谷亮太、金聖祐
- Organizer
  日本結晶成長学会第50回結晶成長国内会議(JCCG-50) オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] HVPE成長β-Ga2O3 SBDのキラー欠陥のエミッション顕微鏡とシンクロトロン X 線トポグラフィーによる観察」（招待）2021
- Author(s)
  嘉数　誠
- Organizer
  日本学術振興会「結晶加工と評価技術」第 145 委員会第 173 回研究会、オンライン、2021年12月8日
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 「ダイヤモンド半導体デバイスの最近の進展2インチ径ヘテロエピウェハ成長と選択ドープパワーデバイスの作製」（招待）2021
- Author(s)
  嘉数　誠、金　聖祐
- Organizer
  応用物理学会、先進パワー半導体研究会、オンライン、2021年12月10日。
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] サファイア基板に大口径・高品質ヘテロエピタキシャルダイヤモンドが成長する機構2021
- Author(s)
  高谷亮太，眞崎瞭, 金聖祐, ニロイチャンドラサハ, 嘉数誠
- Organizer
  2021年秋季応用物理学会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 選択ドーピングしたダイヤモンド電界効果トランジスタ2021
- Author(s)
  嘉数誠，ニロイサハチャンドラ, 金聖祐，大石敏之
- Organizer
  2021年秋季応用物理学会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ダイヤモンド半導体ウェハとデバイス技術の最近の進展2021
- Author(s)
  嘉数誠
- Organizer
  （一社）電子実装工学研究所（IMSI）接合界面創成技術研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ステップフロー成長を用いたヘテロエピタキシャルダイヤモンドの高品質化2021
- Author(s)
  金聖祐，高谷亮太, 嘉数誠
- Organizer
  2021年秋季応用物理学会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 顕微ラマンマッピング測定による酸化ガリウム結晶の微細構造評価2021
- Author(s)
  中西雅彦, 飯塚万友, 庄司昂平, 桝谷聡士, 嘉数誠, 山口智広, 本田徹, 佐々木公平, 倉又朗人, 尾沼猛儀
- Organizer
  2021年春季応用物理学会19a-Z33-4
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 高感度エミッション顕微鏡によるHVPE(001)beta型酸化ガリウムSBDのリーク電流の起源の同定―微粒子による積層欠陥2021
- Author(s)
  嘉数誠, スダーンセイリープ, 佐々木公平, 桝谷聡士, 川崎克己, 平林潤, 倉又朗人
- Organizer
  2021年春季応用物理学会19a-Z33-8
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Diamond Field-Effect Transistors with Modulation Doping2021
- Author(s)
  Makoto Kasu, Niloy Chandra Saha, Seong-Woo Kim, and Toshiyuki Oishi
- Organizer
  2021 Materials Research Society Fall Meeting, EQ19.12, Online,
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Initial Growth Mechanism of High-Quality Diamond Heteroepitaxial Layers on Sapphire and MgO Substrates2021
- Author(s)
  Makoto Kasu, Ryota Takaya, Ryo Masaki, Niloy Chandra Saha, Yuki Kawamata, Koji Koyama, and Seong-Woo Kim
- Organizer
  31st International Conference on Diamond and Carbon Materials, Online, 6-9 September 2021.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 高分解能X線回折法によるVB成長β型酸化ガリウムの結晶品質の評価2021
- Author(s)
  チャマン　イスラム, 干川圭吾, 嘉数誠
- Organizer
  2021年秋季応用物理学会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ダイヤモンドウェハおよびトランジスタ技術の最近の進展」（招待）2021
- Author(s)
  嘉数　誠、金　聖祐
- Organizer
  2021 Microwave Workshops & Exhibition (MWE 2021)、横浜、2021年11月24日
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] High Quality Heteroepitaxial Diamond by Using Step-Flow Growth2021
- Author(s)
  Seong-Woo Kim, Ryota Takaya, and Makoto Kasu
- Organizer
  2021 Materials Research Society Fall Meeting, ET, Online
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Killer defects in β-Ga2O3 Schottky barrier diodes observed by ultrahigh sensitive emission microscopy and synchrotron X-ray topography2021
- Author(s)
  M. Kasu, S. Sayleap, H. Takaji, K. Sasaki, J. Arima, K. Kawasaki, J. Hirabayashi, A. Kuramata
- Organizer
  Materials Research Society 2021 Spring Meeting, online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 高感度エミッション顕微鏡によるHVPE (001) β型酸化ガリウムSBDのリーク電流の起源の同定ープローブによる欠陥2021
- Author(s)
  スダーンセイリープ, シャーマンイスラム, 桝谷聡士, 佐々木公平, 川崎克己, 平林潤, 倉又朗人, 嘉数誠
- Organizer
  2021年秋季応用物理学会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] イオン注入法のみでドーピングし作製したダイヤモンドショットキーバリアダイオード2021
- Author(s)
  重松誠弥，関裕平，星野靖，中田穣治，大石敏之，嘉数誠
- Organizer
  2021年秋季応用物理学会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Observation of Nitrogen species at Al2O3/NO2/H-diamond Interfaces Using Synchrotron X-ray Photoemission Spectroscopy2021
- Author(s)
  Niloy Chandra Saha, Kazutoshi Takahashi, Masaki Imamura, Makoto Kasu
- Organizer
  2021年春季応用物理学会E 18a-Z13-7
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] マイクロ波帯ハイパワーアンプ応用を目指したダイヤモンドトランジスタの研究」（招待）2021
- Author(s)
  嘉数　誠、金　聖祐
- Organizer
  2021 Microwave Workshops & Exhibition (MWE 2021)、横浜、2021年11月25日
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ラマン分光法によるGaN/ダイヤモンド接合界面の残留応力評価2021
- Author(s)
  小林礼佳, 清水康雄, 大野裕, 金聖祐, 小山浩司, 嘉数誠, 重川直輝, 梁剣波
- Organizer
  2021年春季応用物理学会19p-Z25-12
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Diamond Schottky barrier diodes with double Boron ion implantation structure2021
- Author(s)
  S. Sigematsu, T. Oishi, Y. Seki, J. Nakata, and M. Kasu
- Organizer
  New Diamond and Nano Carbons 2020/2021, online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Modulation-doped diamond field-effect transistors fabricated by NO2 delta doping in an Al2O3 gate layer2021
- Author(s)
  M. Kasu, N.C. Saha, S.-W. Kim, and T. Oishi
- Organizer
  31st International Conference on Diamond and Carbon Materials, Online
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 145-MW/cm2 NO2-Doped Diamond MOSFETs2021
- Author(s)
  Makoto Kasu
- Organizer
  Diamond Electronics Workshop, Online (Washington DC)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ダイヤモンド大口径ウェハおよびパワートランジスターの最近の進展2021
- Author(s)
  嘉数　誠、金　聖祐
- Organizer
  日本機械学会熱工学コンファレンス 2021、オンライン、2021年10月9日（招待）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ステップフロー成長を用いたサファイア基板上大口径・高品質ダイヤモンドのヘテロエピタキシャル成長2021
- Author(s)
  金聖祐, 平野慎太郎, 高谷亮太, 嘉数誠
- Organizer
  日本結晶成長学会第50回結晶成長国内会議(JCCG-50) オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 緑色発光を用いたβ-Ga2O3結晶の微細構造評価2021
- Author(s)
  庄司昂平, 中西雅彦, 桝谷聡士, 嘉数誠, 山口智広, 本田徹, 佐々木公平, 倉又朗人, 尾沼猛儀
- Organizer
  2021年秋季応用物理学会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Mechanism of Diamond Heteroepitaxial Growth on Sapphire Substrate2021
- Author(s)
  R. Takaya, Y. Kawamata, K. Kawamata, Seong -Woo Kim, and M. Kasu
- Organizer
  New Diamond and Nano Carbons 2020/2021, online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] MgO基板上ダイヤモンドヘテロエピタキシャル成長機構2021
- Author(s)
  真崎瞭, 高谷亮太, 金聖祐, 川又友喜, 小山浩司, ニロイチャンドラ, 嘉数誠
- Organizer
  2021年春季応用物理学会18a-Z13-4
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] サファイア基板上に成長した最高品質ヘテロエピタキシャルダイヤモンド2021
- Author(s)
  高谷亮太, 金聖祐, 川又友喜, 小山浩司,　ニロイサハチャンドラ, 嘉数誠
- Organizer
  2021年春季応用物理学会18a-Z13-5
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 2608 V Operation of NO2-Doped p-channel Diamond MOSFETs2021
- Author(s)
  Niloy Chandra Saha, Seong Woo Kim, Toshiyuki Oishi, Yuki Kawamata, Koji Koyama, Makoto Kasu
- Organizer
  2021年春季応用物理学会E 19p-Z25-14
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope2021
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu
- Organizer
  2021年春季応用物理学会19a-Z33-7
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] ダイヤモンド半導体の最近の進展大口径ヘテロエピタキシャル成長とパワー半導体デバイスの開発」（招待）2021
- Author(s)
  嘉数　誠、金　聖祐
- Organizer
  「2021 Nano Scientific Symposium Japan」「ナノ科学シンポジウム 2021」、横浜、2021年11月22日
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 高感度エミッション顕微鏡およびシンクロトロンX線トポグラフィーによるHVPE(001)β型酸化ガリウムSBDのキラー欠陥の同定2021
- Author(s)
  嘉数誠，スダーンセイリープ，シャーマンイスラム，桝谷聡士，佐々木公平，川崎克己，平林潤，倉又朗人
- Organizer
  日本結晶成長学会第50回結晶成長国内会議(JCCG-50) オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 2608-V 344.6-MW/cm2 NO2 p-type Doped Diamond MOSFETs on High-Quality Heteroepitaxial Diamond Layers2021
- Author(s)
  M. Kasu, N.C. Saha, S. -W. Kim, Y. Kawamata, K. Koyama, and T. Oishi
- Organizer
  Materials Research Society 2021 Spring Meeting, online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] サファイア基板上ダイヤモンドヘテロエピタキシャルの成長機構2020
- Author(s)
  高谷亮太，川又友喜，小山浩司，金聖祐，嘉数誠
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 高品質VB成長β型酸化ガリウムバルク結晶のシンクロトロンX線トポグラフィー観察2020
- Author(s)
  嘉数誠, スダーンセイリープ, 小林拓実, 大葉悦子, 干川圭吾
- Organizer
  2020年秋季応用物理学会、9p-Z20-5
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] High Current (0.7 A/mm) for Diamond MOSFETs with 1.4 Micron Meter Gate and NO2 P-Type Doping on High Quality Heteroepitaxial Diamond Substrates2020
- Author(s)
  N. Chandra, T. Oishi, S. -W. Kim, Yuki Kawamata, Koji Koyama, and M. Kasu
- Organizer
  Materials Research Society 2020 Virtual Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Initial Growth of High-Quality Diamond Heteroepitaxial Layer on Sapphire Substrate2020
- Author(s)
  M. Kasu, R. Takaya, Yuki Kawamata, Koji Koyamand, and S. -W. Kim
- Organizer
  Materials Research Society 2020 Virtual Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] サファイア基板上にヘテロエピタキシャル成長したダイヤモンドの核形成の観察2020
- Author(s)
  高谷亮太, 川又友喜, 小山浩司, 金聖祐, 嘉数誠
- Organizer
  2020年秋季応用物理学会、8p-Z05-5
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] HVPE成長β型酸化ガリウムエピ層中の積層欠陥の観察2020
- Author(s)
  嘉数誠, スダーンセイリープ, 佐々木公平, 桝谷聡士, 川崎克己, 平林潤, 倉又朗人
- Organizer
  2020年秋季応用物理学会、29p-Z20-6
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Ultrahigh-Sensitivity Emission Microscopy Study of β-Ga2O3 Schottky Barrier Diodes in Operation2020
- Author(s)
  M. Kasu, S. Sayleap, H. Takaji, K. Sasaki, J. Arima, K. Kawasaki, J. Hirabayashi, A. Kuramata
- Organizer
  Materials Research Society 2020 Virtual Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 超高感度エミッション顕微鏡によるEFG成長β型酸化ガリウムショットキーバリアダイオードの漏れ電流の起源の同定2020
- Author(s)
  嘉数誠, スダーンセイリープ, 佐々木公平, 大石敏之, 川崎克己, 平林潤, 倉又朗人
- Organizer
  2020年秋季応用物理学会、9p-Z20-11
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 145-MW/cm2 NO2-Doped Diamond MOSFETs2020
- Author(s)
  Niloy Chandra Saha, Toshiyuki Oishi, Seongwoo Kim, Yuki Kawamata, Koji Koyama, Makoto Kasu
- Organizer
  2020年秋季応用物理学会、11p-Z04-9
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] NO2ドープダイヤモンドMOSFETの大電流（0.78 A / mm）、高電圧（618 V）動作2020
- Author(s)
  ニロイチャンドラサハ, 川又友喜, 小山浩司, 金聖祐, 大石敏之, 嘉数誠
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 高感度エミッション顕微鏡による(001β型酸化ガリウムショットキーバリアダイオードの漏れ電流の観察2020
- Author(s)
  スダーンセイリープ, 佐々木公平, 倉又朗人, 嘉数誠
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] GaN/多結晶ダイヤモンド直接接合の作製及び特性評価2020
- Author(s)
  小林礼佳, 清水康雄, 大野裕, 金聖祐, 小山浩司, 嘉数誠, 重川直輝, 梁剣波
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] GaN/多結晶ダイヤモンド直接接合の作製及び特性評価2020
- Author(s)
  小林礼佳、清水康雄、大野裕、金聖祐、小山浩司、嘉数誠、重川直輝、梁剣波
- Organizer
  2020年第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature2019
- Author(s)
  Jianbo Liang, Makoto Kasu, Martin Kuball and Naoteru Shigekawa
- Organizer
  13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] RF characteristics for submicron-gate diamond MOSFETs fabricated on heteroepitaxial diamonds2019
- Author(s)
  M. Kasu, Y. Ishimatsu, T. Kamogawa, N. C. Saha, T. Oishi, S. -W. Kim
- Organizer
  13th New Diamond and Nano Carbons Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] GaAs/Diamond直接接合の界面評価2019
- Author(s)
  中村祐志、清水康雄、大野裕、詹天卓、山下雄一郎、白崎謙次、永井康介、渡邊孝信、嘉数誠、重川直輝、梁剣波
- Organizer
  2019年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Effect of annealing temperature on diamond/Si interfacial structure2019
- Author(s)
  J. Liang, Y. Zhou, S. Masuya ; F. Gucmann, M. Singh, J. Pomeroy, S. Kim, M. Kuball, M. Kasu, N. Shigekawa
- Organizer
  2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] 高出力デバイス応用に向けたGaAs/Diamond直接接合の作製2019
- Author(s)
  中村祐志、桝谷聡士、嘉数誠、重川直輝、梁剣波
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] β-Ga2O3単結晶中の欠陥と電気的特性の相関2019
- Author(s)
  嘉数誠
- Organizer
  本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会、第113回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Relation between Emission Spots and Reverse Leakage Current in HVPE (001) β-Ga2O3 Schottky Barrier Diodes2019
- Author(s)
  M. Kasu, K. Sasaki, K. Kawasaki, J. Hirabayashi, and A. Kuramata
- Organizer
  2019 International Workshop on Gallium Oxide and related materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] GaAs/Diamond直接接合の界面評価2019
- Author(s)
  中村祐志、清水康雄、大野裕、詹天卓、山下雄一郎、白崎謙次、永井康介、渡邊孝信、嘉数誠、重川直輝、梁剣波
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Fabrication of GaAs/diamond direct bonding for high power device applications2019
- Author(s)
  Y. Nakamura, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, and J. Liang
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications2019
- Author(s)
  J. Liang, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, S. Kim, M. Kasu, M. Kuball, and N. Shigekawa
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Heterointerfacial electronic properties and energy band alignment of Al2O3/Air/H-diamond heterointerface using XPS/XANES measurements2019
- Author(s)
  Niloy Chandra Saha, Kazutoshi Takahashi, Masaki Imamura, Makoto Kasu
- Organizer
  13th New Diamond and Nano Carbons Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Synchrotron X-ray Topography Observation of Defects in Vertical-Bridgman-Grown β-Ga2O3 Single Crystal2019
- Author(s)
  M. Kasu, S. Masuya, K. Sasaki, A. Kuramata, T. Kobayashi, K. Hoshikawa, and O. Ueda
- Organizer
  2019 International Workshop on Gallium Oxide and related materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 高出力パワーデバイス応用に向けたGaN/Diamond直接接合の作製2019
- Author(s)
  梁剣波、清水康雄、大野裕、白崎謙次、永井康介、嘉数誠、金聖祐、Kuball Martin、重川直輝
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] 高出力パワーデバイス応用に向けたGaN/Diamond直接接合の作製2019
- Author(s)
  梁剣波、清水康雄、大野裕、白崎謙次、永井康介、嘉数誠、金聖祐、Kuball Martin、重川直輝
- Organizer
  2019年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] β-Ga2O3結晶中の欠陥と電気的特性との関係2019
- Author(s)
  嘉数　誠
- Organizer
  日本学術振興会162委員会第113回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Fabrication of Diamond/Cu Direct Bonding for Power Device Application2019
- Author(s)
  S. Kanda, S. Masuya, M. Kasu, N. Shigekawa, and J. Liang
- Organizer
  2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] パワーデバイス応用に向けたダイヤモンド/Cu直接接合の形成2019
- Author(s)
  梁剣波、神田進司、桝谷聡士、嘉数誠、重川直輝
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] RF measurements and analysis for submicron-gate diamond MOSFETs fabricated on heteroepitaxial diamonds2019
- Author(s)
  M. Kasu, T. Kamogawa, N. C. Saha, T. Oishi, S. -W. Kim
- Organizer
  30th International Conference on Diamond and Related Materials (ICDCM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] RF characteristics for submicron-gate diamond MOSFETs fabricated on heteroepitaxial diamonds2019
- Author(s)
  M. Kasu, Y. Ishimatsu, T. Kamogawa, N. C. Saha, T. Oishi, S. -W. Kim
- Organizer
  30th International Conference on Diamond and Related Materials (ICDCM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] β-Ga2O3結晶中の欠陥とデバイス特性との関係2019
- Author(s)
  嘉数　誠
- Organizer
  信州大学グリーンマテリアル研究所シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Diamond Semiconductor Technologies towards RF Power Applications2019
- Author(s)
  Makoto Kasu
- Organizer
  4th International Carbon Materials Conference and Exhibition
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 高い電圧変換比を持つダイヤモンドショットキーバリアダイオードRF-DC変換回路2018
- Author(s)
  深見成、網代康佑、大石敏之、河野直士、荒木幸二、桝谷聡士、嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Al2O3/NO2ホールドープダイヤモンドMOS構造のC-V測定におけるゲート金属の影響2018
- Author(s)
  サハニロイチャンドラ、嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] シンクロトロンX線光電子分光法によるAl2O3/NO/Hダイヤモンドヘテロ界面のエネルギーバンドアライメントの測定2018
- Author(s)
  サハニロイチャンドラ、高橋和敏、今村真幸、嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] ダイヤモンド基板のCMP処理によるエピタキシャル膜の高品質化2018
- Author(s)
  藤居大毅、枡谷聡士、大山幸希、武田秀俊、木村豊、金聖祐、嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] HVPEによるα-Ga2O3の選択横方向成長2018
- Author(s)
  大島祐一、河原克明、神野莉衣奈、四戸孝、人羅俊実、嘉数誠、藤田静雄
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] HVPEによるα-Ga2O3のGeドーピング2018
- Author(s)
  大島祐一、河原克明、嘉数誠、四戸孝、人羅俊実
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] シンクロトロンX線セクショントポグラフィーによる低転位密度の高温高圧合成ダイヤモンド単結晶の観察2018
- Author(s)
  桝谷聡士、角谷均、嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] バックコンタクト型太陽電池，PERC型太陽電池，シリコンヘテロ接合型太陽電池モジュールの温度特性測定2018
- Author(s)
  原重臣、ジャファーアブドゥ、崔誠佑、千葉恭男、増田淳、嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] マイクロニードル技術を用いた高品質ヘテロエピタキシャル膜上に作製したダイヤモンドFET2018
- Author(s)
  嘉数誠、深見成、石松裕真、桝谷聡士、大石敏之、藤居大樹、金聖佑
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] The combination of Diamond devices with Si LSI by surface activated bonding2018
- Author(s)
  Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu, and Naoteru Shigekawa
- Organizer
  29th International Conference on Diamond and Carbon Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Dependence of String Power on its Height in the Array in Yoshinogari Mega Solar Power Plant2017
- Author(s)
  S. Hara, M. Kasu, and Y. Masutomi
- Organizer
  International 2017 IEEE Photovoltaic Specialists Conference (PVSC-44)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Interface Properties of Diamond MOS Diodes Studied by Capacitance-Voltage and Conductance Methods - NO2 Hole Doping Effect2017
- Author(s)
  N. C. Saha, M. Kasu
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] (-201) β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係2017
- Author(s)
  森林朋也，橋口明広，大島孝仁，花田賢志，大石敏之，輿公祥，佐々木公平，倉又朗人，上田修，嘉数誠
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Si 基板と接合した単結晶ダイヤモンドの残留応力評価2017
- Author(s)
  梁剣波、桝谷聡士、嘉数誠、Y. Zhou、F. Gucmann、M. S ingh、J. Pomeroy、M. Kuball、重川直輝
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Interpolation Method for Missing Data of Measurement in Mega Solar Power Plant Using Wavelet Transforms2017
- Author(s)
  S. Hara, M. Kasu
- Organizer
  27th International Photovoltaic Science and Engineering Conference (PVSEC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] ダイヤモンド素子を用いた高耐圧レクテナ回路の作製2017
- Author(s)
  河野直士, 深見成, 桝谷聡士，嘉数誠，大石敏之
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Relationship between dislocations and etch pits on the (111) CVD diamond single crystal2017
- Author(s)
  S. Masuya, M. Kasu
- Organizer
  11th Conference on New Diamond and Nano Carbons (NDNC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Room temperature direct bonding of single crystal diamond and Si substrates for the combination of diamond devices with Si LSI2017
- Author(s)
  Jianbo Liang, Satoshi Masuya, Makoto Kasu, Manikant Singh, Michael J. Uren, Martin Kuball, and Naoteru Shigekawa
- Organizer
  12th Topical Workshop on Heterostructure Microelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K13676
[Presentation] High-Speed Measurements of Generated Power and its Relationship to Weather Observations at Yoshinogari Mega Solar Power Plant2017
- Author(s)
  M. Kasu, S. Hara, and T. Uematsu
- Organizer
  International 2017 IEEE Photovoltaic Specialists Conference (PVSC-44)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] emperature Dependence and Performance Analysis of Photovoltaic Modules2017
- Author(s)
  J. Abdu, S. Hara, S. Choi, Y. Chiba, A. Masuda, M. Kasu
- Organizer
  27th International Photovoltaic Science and Engineering Conference (PVSEC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Continuous operation (14 h) and stress tests for H-diamond field-effect transistors2017
- Author(s)
  M. Kasu, K. Funaki, Y. Ishimatsu, S. Masuya, T. Oshima, and T. Oishi
- Organizer
  11th Conference on New Diamond and Nano Carbons (NDNC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Si基板と接合した単結晶ダイヤモンドの残留応力評価2017
- Author(s)
  Jianbo Liang, Satoshi Masuya, Yan Zhou, Filip Gucmann, Manikant Singh, James Poweroy, Martin Kuball, Makoto Kasu, and Naoteru Shigekawa
- Organizer
  第７８回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K13676
[Presentation] ダブルNO2ホールドーピングした水素終端ダイヤモンドMOS FETの連続動作2017
- Author(s)
  舟木　浩祐，石松　裕真，桝谷　聡士，大島　孝仁，嘉数誠, 大石敏之
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Ten-Millisecond Interval Measurements of Generated Power, Irradiance and Weather at Mega Solar Power Plant2017
- Author(s)
  M. Kasu, S. Hara
- Organizer
  International 2017 IEEE Photovoltaic Specialists Conference (PVSC-44)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] NO2ホールドーピング水素終端ダイヤモンドMOS FETのDCストレスによる劣化メカニズムの検討2017
- Author(s)
  舟木浩祐、石松裕真、桝谷聡士、宮崎恭輔、大島孝仁、嘉数誠、大石敏之
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] 吉野ヶ里メガソーラーにおける高速測定システムの構築2017
- Author(s)
  嘉数　誠，原　重臣，植松卓巳
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] 低暗電流酸化ガリウムMIS光検出素子2017
- Author(s)
  大島孝仁、橋川誠、富澤三世、佐々木公平、倉又朗人、大石敏之、嘉数誠
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] シンクロトロンX線トポグラフィーによるEFG成長β-Ga2O3単結晶中の欠陥の観察2017
- Author(s)
  桝谷聡士、輿公祥、飯塚和幸、倉又朗人、上田修、嘉数誠
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Subsecond interval measurements of outdoor operated mega solar power plant2017
- Author(s)
  Shigeomi Hara, Makoto Kasu
- Organizer
  27th International Photovoltaic Science and Engineering Conference (PVSEC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] EFG成長したβ-Ga2O3結晶中の欠陥評価(2) - 板状のナノボイドおよび双晶2017
- Author(s)
  上田修、池永訓昭、森林朋也、輿公祥、飯塚和幸、倉又朗人、嘉数誠
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] ダイヤモンド単結晶とSi単結晶基板の常温接合2016
- Author(s)
  梁　剣波、桝谷　聡士、嘉数　誠、重川　直輝
- Organizer
  2016年　第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K13676
[Presentation] Synchrotron X-ray topography observation of stacking faults in HPHT diamond single crystal2016
- Author(s)
  S. Masuya, K. Hanada, T. Uematsu, T. Moribayashi, M. Kasu, H. Sumiya
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)
- Place of Presentation
  Nagoya
- Year and Date
  2016-03-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Fabrication of Diamond Field-Effect Transistors with Various NO2 Hole-Doping Conditions and Al2O3 Gate Insulator Layers2016
- Author(s)
  Makoto Kasu, Kenji Hanada, Kazuya Harada, Yuta Koga, Kosuke Funaki, and Toshiyuki Oisi,
- Organizer
  Materials Research Meeting (MRS) Spring Meeting
- Place of Presentation
  Phoenix, USA
- Year and Date
  2016-03-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Diamond FETs for RF Power Electronics; Novel Hole Doping2016
- Author(s)
  Makoto Kasu
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016)
- Place of Presentation
  名古屋
- Year and Date
  2016-03-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Observation of Crystalline Pits in β-Ga2O3 As-Grown Single Crystals2016
- Author(s)
  Makoto Kasu, Kenji Hanada, Tomoya Moribayashi, Takumi Uematsu, Satoshi Masuya, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, and Osamu Ueda
- Organizer
  Materials Research Meeting (MRS) Spring Meeting
- Place of Presentation
  Phoenix, USA
- Year and Date
  2016-03-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Real Time Measurement of Hole Doping by NO2 and SO2 Molecular Adsorption2016
- Author(s)
  Kenji Hanada, Makoto Kasu
- Organizer
  27th International Conference on Diamond and Carbon Materials
- Place of Presentation
  モンペリエ
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Fabrication of diamond field-effect transistors with double NO2 hole doping and low-temperature-deposited Al2O3 gate insulator layer2016
- Author(s)
  M. Kasu, K. Hanada, K. Funaki, S. Masuya, T. Oshima, and T. Oishi
- Organizer
  27th International Conference on Diamond and Carbon Materials
- Place of Presentation
  モンペリエ
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Determination of stacking faults in an (111) high pressure/high temperature (HP/HT) diamond single crystals with extremely low defect density via synchrotron X-ray topography2016
- Author(s)
  S. Masuya , T. Moribayashi , K. Hanada , H. Sumiya, M. Kasu
- Organizer
  27th International Conference on Diamond and Carbon Materials
- Place of Presentation
  モンペリエ
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] シンクロトロンX線トポグラフィーによる低欠陥密度高温高圧合成(110)ダイヤモンド単結晶の積層欠陥の部分転位観察2016
- Author(s)
  桝谷聡士、森林朋也、花田賢志、角谷均、嘉数誠
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] β-Ga2O3成長結晶の(010)における溝型欠陥の観察2016
- Author(s)
  花田賢志，森林朋也，輿　公祥，佐々木公平，倉又朗人，上田　修，嘉数　誠
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Study on Dislocations and Stacking faults and in High-Pressure High-Temperature Synthesized Type-IIa Diamond Single Crystals by Synchrotron X-ray Topography Observations2016
- Author(s)
  Makoto Kasu, Satoshi Masuya, Kenji Hanada, Tomoya Moribayashi, Hitoshi Sumiya
- Organizer
  Materials Research Meeting (MRS) Spring Meeting
- Place of Presentation
  Phoenix, USA
- Year and Date
  2016-03-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] β-Ga2O3ショットキーバリアダイオード素子特性の分布2016
- Author(s)
  嘉数誠、原田和也、花田賢志、大石敏之
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] シンクロトロンX線トポグラフィーによる低欠陥密度高温高圧合成ダイヤモンド(111)単結晶の積層欠陥観察2016
- Author(s)
  桝谷聡士、森林朋也、花田賢志、角谷均、嘉数誠
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Fabrication of Diamond Rectenna Devices for RF Power Transmission2016
- Author(s)
  M. Kasu, T. Oisi, N. Kawano, A. Miyachi, and S. Kawasaki
- Organizer
  27th International Conference on Diamond and Carbon Materials
- Place of Presentation
  モンペリエ
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] ダイヤモンドデバイスを用いた無線電力伝送用レクテナの理論的検討2016
- Author(s)
  大石敏之、河野直士、嘉数誠
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Diamond Devices for RF Applications2016
- Author(s)
  Makoto Kasu, Toshiyuki Oishi
- Organizer
  2016 URSI Asia-Pacific Radio Science Conference: URSI AP-RASC 2016
- Place of Presentation
  ソウル
- Year and Date
  2016-08-21
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] 酸化ガリウムダイオードを用いたレクテナ回路動作2016
- Author(s)
  河野直士、大島孝仁、嘉数誠、大石敏之
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Recent Progress of Diamond Devices for RF Applications2016
- Author(s)
  Makoto Kasu, Toshiyuki Oishi
- Organizer
  2016 IEEE Compound Semiconductor IC Symposium
- Place of Presentation
  Austin
- Year and Date
  2016-10-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係2016
- Author(s)
  橋口明広、森林朋也、花田賢志、大島孝仁、大石敏之、輿公祥、佐々木公平、倉又朗人、上田修、嘉数誠
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] ダブルNO2ホールドーピングを用いたダイヤモンド電界効果トランジスタの作製2016
- Author(s)
  嘉数誠、原田和也、古賀優太、花田賢志、大石敏之
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] 高温アニールによるダイヤモンド単結晶の積層欠陥の消滅2016
- Author(s)
  桝谷聡士、森林朋也、角谷均、嘉数誠
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] ダイヤモンド単結晶とSi単結晶基板の常温接合2016
- Author(s)
  梁剣波、桝谷聡士、嘉数誠、重川直輝
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] β-Ga2O3(010)単結晶のエッチピットの観察2016
- Author(s)
  花田賢志，森林朋也，輿　公祥，佐々木公平，倉又朗人，上田　修，嘉数　誠
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] β-Ga2O3 (010)単結晶のエッチピットの構造2016
- Author(s)
  森林朋也、花田賢志、輿公祥、佐々木公平、倉又朗人、上田修、嘉数誠
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Disappearance of stacking faults in single crystal diamond by thermal annealing2016
- Author(s)
  S. Masuya, T. Moribayashi , K. Hanada, H. Sumiya , M. Kasu
- Organizer
  27th International Conference on Diamond and Carbon Materials
- Place of Presentation
  モンペリエ
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] β-Ga2O3用ITOオーミック電極2016
- Author(s)
  大島孝仁、若林諒、服部真依、橋口明広、河野直人、佐々木公平、増井建和、倉又朗人、山腰茂伸、吉松公平、大友明、大石敏之、嘉数誠
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] ダイヤモンド表面のSO2ホールドーピングの実時間測定2016
- Author(s)
  花田賢志，嘉数誠
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] 高効率無線電力伝送を目指したダイヤモンド・レクテナデバイスの提案2016
- Author(s)
  大石敏之，河野直士，嘉数誠
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] 高濃度Snドープ-Ga2O3(-20 1)単結晶の温度特性の検討2016
- Author(s)
  大石敏之、嘉数誠
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] ダイヤモンド素子を用いたレクテナ回路の作製2016
- Author(s)
  河野直士, 大石敏之, 嘉数誠
- Organizer
  応用物理学会春季講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Etch-Pit Observation of EFG-grown b-Ga2O3 Single Crystals2015
- Author(s)
  M. Kasu, T. Uematsu, S. Masuya, T. Moribayashi, K. Hanada,　K. Koshi, K. Sasaki, and A. Kuramata
- Organizer
  International Workshop on Gallium Oxide (IWGO)
- Place of Presentation
  京都
- Year and Date
  2015-11-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] NO2分子によるホールドーピングを用いた水素終端ダイヤモンド電界効果トランジスタの作製2015
- Author(s)
  古賀優太、原田和也、花田賢志、大石敏之、嘉数誠
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Synchrotron X-ray Topography Observation of (110) HPHT type-IIa Diamond Single Crystals2015
- Author(s)
  M.Kasu, R.Murakami, S.Masuya, T.Uematsu, and H.Sumiya
- Organizer
  International Conference on New Diamond and Nano Carbon (NDNC)
- Place of Presentation
  Shizuoka
- Year and Date
  2015-05-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] ダイヤモンドMOSFET界面研究の最近の進展2015
- Author(s)
  嘉数　誠
- Organizer
  表面科学会学術講演会
- Place of Presentation
  つくば
- Year and Date
  2015-11-30
- Invited
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] β-Ga2O3(010)単結晶のエッチピット観察2015
- Author(s)
  植松卓巳、桝谷聡士、森林朋也、花田賢志、輿公祥、飯塚和幸、倉又郎人、嘉数　誠
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Estimation Method of Solar Cell Temperature Using Meteorological Data in Mega Solar Power Plant2015
- Author(s)
  S. Hara, H. Tanaka, M. Kasu, N. Matsui
- Organizer
  25th International Photovoltatic Science and Engineering Conference (PVSEC-25)
- Place of Presentation
  Busan, South Korea
- Year and Date
  2015-11-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] 高温高圧合成ダイヤモンド単結晶の積層欠陥の放射光Ｘ線トポグラフィ観察2015
- Author(s)
  桝谷聡士、花田賢志、植松卓巳、森林朋也、角谷均、嘉数誠
- Organizer
  第29回ダイヤモンドシンポジウム
- Place of Presentation
  東京
- Year and Date
  2015-11-17
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] シンクロトロンX線トポグラフィー透過法によるHPHT単結晶ダイヤモンドの2015
- Author(s)
  桝谷聡士、村上竜一、角谷均、嘉数　誠
- Organizer
  第29回ダイヤモンドシンポジウム
- Place of Presentation
  東京
- Year and Date
  2015-11-17
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Diamond Transistors –Present Status and Future Prospects2015
- Author(s)
  Makoto Kasu
- Organizer
  Collaborative Conference on 3D & Materials Research (CC3DMR)
- Place of Presentation
  Busan, South Korea
- Year and Date
  2015-06-15
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Ultimate Wide-Gap Semiconductors:Diamond Power Devices and Aluminum Nitride Deep-Ultraviolet LEDs2015
- Author(s)
  Makoto Kasu
- Organizer
  Semicon Nano 2015
- Place of Presentation
  Hsinchu, Taiwan
- Year and Date
  2015-09-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] β-Ga2O3ワイドギャップ半導体単結晶のエッチピットの構造2015
- Author(s)
  森林朋也、植松卓巳、桝谷聡士、花田賢志、輿公祥、佐々木公平、倉又朗人、嘉数　誠
- Organizer
  応用物理学会九州支部大会
- Place of Presentation
  那覇
- Year and Date
  2015-12-05
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] NO2 吸着ダイヤモンドFET のデバイスモデルの提案2015
- Author(s)
  大石敏之岸川拓也吉川大地古賀優太嘉数誠
- Organizer
  電子情報通信学会ソサエティー大会
- Place of Presentation
  仙台
- Year and Date
  2015-09-08
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Estimation Method of Characteristic Parameters of Strings in Mega Solar Power Plant2015
- Author(s)
  Shigeomi Hara, Makoto Kasu, Noriaki Matsui
- Organizer
  25th International Photovoltatic Science and Engineering Conference (PVSEC-25)
- Place of Presentation
  Busan, South Korea
- Year and Date
  2015-11-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] EFG成長β- Ga2O3単結晶のエッチピットの観察2015
- Author(s)
  花田賢志，森林朋也，植松卓巳，桝谷聡士，嘉数誠，輿公祥，佐々木公平，倉又朗人
- Organizer
  結晶成長学会国内会議
- Place of Presentation
  札幌
- Year and Date
  2015-10-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] NO2 分子吸着中における水素終端ダイヤモンド表面のホール濃度の測定2015
- Author(s)
  花田賢志, 嘉数誠
- Organizer
  表面科学会学術講演会
- Place of Presentation
  つくば
- Year and Date
  2015-12-01
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Fabrication of Schottky Barrier Diodes of EFG-grown Sn-doped b-Ga2O3 (-201) Single-Crystals2015
- Author(s)
  Y. Koga, K. Harada, K. Hanada, T. Oishi, and M. Kasu
- Organizer
  International Workshop on Gallium Oxide (IWGO)
- Place of Presentation
  京都
- Year and Date
  2015-11-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] Snドープβ-Ga2O3(-2 0 1)単結晶のショットキーバリアダイオードの作製2015
- Author(s)
  古賀優太、原田和也、花田賢志、大石敏之、嘉数誠
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] シンクロトロンX線トポグラフィによる高温高圧合成ダイヤモンド(110)単結晶の積層欠陥の評価2015
- Author(s)
  桝谷聡士、花田賢志、植松卓巳、森林朋也、嘉数誠、角谷均
- Organizer
  結晶成長学会国内会議
- Place of Presentation
  札幌
- Year and Date
  2015-10-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] シンクロトロンX線トポグラフィーによる高品質高温高圧合成ダイヤモンド2015
- Author(s)
  嘉数　誠，村上竜一、桝谷聡士、原田和也、角谷　均
- Organizer
  結晶成長学会国内会議
- Place of Presentation
  札幌
- Year and Date
  2015-10-19
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] シンクロトロンX線トポグラフィによる高温高圧合成ダイヤモンド単結晶の積層欠陥の観察2015
- Author(s)
  植松卓巳、桝谷聡士、花田賢志、角谷　均、嘉数　誠
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03977
[Presentation] β-Ga2O3単結晶のシンクロトロンX線トポグラフィー観察2014
- Author(s)
  桝谷聡士、村上竜一、輿　公祥、倉又朗人、飯塚和幸、嘉数　誠
- Organizer
  2014年春季応用物理学会学術講演会
- Place of Presentation
  相模原
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] シンクロトロン光・X線トポグラフィー観察を用いた高温高圧合成ダイヤモンド単結晶の転位の同定2014
- Author(s)
  村上竜一、桝谷聡士、松永晃和、原田和也、角谷均、嘉数誠
- Organizer
  2014年春季応用物理学会学術講演会
- Place of Presentation
  相模原
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ダイヤモンドパワートランジスタ研究開発の最近の進展2014
- Author(s)
  嘉数　誠
- Organizer
  日本学術振興会真空ナノエレクトロニクス第１５８委員会第１０４回研究会
- Place of Presentation
  京都
- Year and Date
  2014-09-24
- Invited
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] NO2曝露・水素終端ダイヤモンド／Al2O3ヘテロ界面のバンド不連続の放射光XPS/UPS/XANES測定2014
- Author(s)
  嘉数誠、高橋和敏、今村真幸、平間一行
- Organizer
  2014年春季応用物理学会学術講演会
- Place of Presentation
  相模原
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] β-Ga2O3単結晶のホール電子濃度と移動度の測定と解析2014
- Author(s)
  原田和也、松永晃和、輿公祥、倉又朗人、嘉数誠
- Organizer
  2014年春季応用物理学会学術講演会
- Place of Presentation
  相模原
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Diamond Power Transistors: Present Status and Challenges2014
- Author(s)
  Makoto Kasu
- Organizer
  2014 MRS Fall Meeting
- Place of Presentation
  Boston
- Invited
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ダイヤモンドMOSFETの容量電圧特性の測定と解析2014
- Author(s)
  原田和也, 平間一行, 嘉数誠
- Organizer
  2014年春季応用物理学会学術講演会
- Place of Presentation
  相模原
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ダイヤモンドパワーデバイス研究の現状2014
- Author(s)
  嘉数　誠
- Organizer
  ワイドバンドギャップ半導体デバイスに関わる超精密加工プロセス研究分科会
- Place of Presentation
  大阪
- Year and Date
  2014-05-28
- Invited
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] CVD成長ダイヤモンド単結晶のシンクロトロン光・X線トポグラフィー観察2014
- Author(s)
  桝谷聡士、村上竜一、角谷　均、嘉数　誠
- Organizer
  2014年春季応用物理学会学術講演会
- Place of Presentation
  相模原
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Diamond RF Power ansistors: Present Status and Future Prospects2014
- Author(s)
  Makoto Kasu
- Organizer
  9th European Microwave Integrated Circuits Conference (EUMIC 2014)
- Place of Presentation
  Rome
- Invited
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 高圧高温合成ダイヤモンド単結晶のシンクロトロン光を用いたX線トポグラフィー観察2013
- Author(s)
  村上竜一、桝谷　聡士、原田　和也、松永　晃和、嘉数　誠、角谷　均
- Organizer
  2013年応用物理学会九州支部大会
- Place of Presentation
  長崎
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Al2O3パッシベーションにより熱的安定化したNO2吸着・水素終端ダイヤモンドFETの動作機構2013
- Author(s)
  平間一行,佐藤寿志,原田裕一,山本秀樹,嘉数誡
- Organizer
  2013年第60回応用物理学会春季学術講演会、27p-A6-8
- Place of Presentation
  神奈川工科大学(口頭講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ダイヤモンドへのイオン注入　パワーデバイスを目指して2013
- Author(s)
  嘉数　誠
- Organizer
  応用物理学会表面薄膜分科会研究会イオンビームによる界面表面解析特別研究会
- Place of Presentation
  横浜
- Invited
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] CVD成長ダイヤモンド単結晶のX線トポグラフィー観察2013
- Author(s)
  桝谷　聡士、村上　竜一、原田　和也、松永　晃和、嘉数誠、角谷均
- Organizer
  2013年応用物理学会九州支部大会
- Place of Presentation
  長崎
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] β-Ga2O3のホール効果測定による電子濃度と移動度の解析2013
- Author(s)
  原田和也、松永晃和、嘉数誠、飯塚和幸、輿公祥、倉又朗人
- Organizer
  2013年応用物理学会九州支部大会
- Place of Presentation
  長崎
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] SiC-MOSFETのスイッチング特性解析―SiCパワーMOSFETとの比較―2013
- Author(s)
  田中裕之、原田和也、嘉数誠
- Organizer
  2013年応用物理学会九州支部大会
- Place of Presentation
  長崎
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ダイヤモンドパワーデバイスの開発・技術動向と応用及び今後の展開2012
- Author(s)
  嘉数誠
- Organizer
  日本技術情報センター「早期実用化を目指す次世代パワーデバイスの開発・技術動向と応用及び今後の展開」セミナー-
- Place of Presentation
  東京(招待講演)
- Year and Date
  2012-05-31
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 金属の電界施主における非金属電極材料の効果2012
- Author(s)
  池田進、田尾晋太郎、村上竜一、千北哲聖、嘉数誠
- Organizer
  第26回ダイヤモンドシンポジウム、P2-05
- Place of Presentation
  東京(ポスター講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Thermal stability of H-termianted Diamond FETs by NO2 Adsorption and A1203 passivation, Fl. 22012
- Author(s)
  K. Hirama, H. Sato, and M. Kasu
- Organizer
  6th International New Diamond and Nano Carbons Conference (NDNC 2012)
- Place of Presentation
  San Juan, Puerto Rico(口頭講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] A1203パッシベーションにより熱的安定化したNO2吸着・水素終端ダイヤモンドFET2012
- Author(s)
  平間、佐藤、原田、山本、嘉数誠、
- Organizer
  第26回ダイヤモンドシンポジウム、207
- Place of Presentation
  東京(口頭講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Thermal Stabilization of H-Terminated Diamond Surface by Using A1203 Overlayer and Improved Field-Effect Transistors, 046、2012
- Author(s)
  M. Kasu, K. Hirama. H. Sato, and Y. Harada
- Organizer
  23rd International Conference on Diamond and Carbon Materials (ICDCM2012)
- Place of Presentation
  Granada(口頭講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Critical Hole ConcenTralion for H-Terminaled Diamond surfaces with Various Surface Orientations Obtained by High-Concentrated NO2 Exposure, P2.42012
- Author(s)
  M. Kasu and H. Sato
- Organizer
  23rd International Conference on Diamond and Carbon Materials (ICDCM2012) Granada
- Place of Presentation
  Granada(口頭講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Al2O3パッシベーションにより熱的安定化したNO2吸着・水素終端ダイヤモンドFETのドレイン電流の増大2012
- Author(s)
  平間一打,佐藤寿志,原田裕一,山本秀樹,嘉数誠
- Organizer
  2012年秋季応用物理学会13p-C12-10
- Place of Presentation
  愛媛大学(口頭講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 高濃度NO2ガスを用いた様々な面方位をもつ水素終端ダイヤモンド表面への正孔ドーピング2012
- Author(s)
  嘉数誠、佐藤寿志
- Organizer
  第32回表面科学学術講演会20Dp07
- Place of Presentation
  東北大学(口頭講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ワイドギャップ半導体の創製と光電子デバイスへの応用2012
- Author(s)
  嘉数誠
- Organizer
  2012年応用物理学会九州支部大会、シンポジウム基調講演
- Place of Presentation
  佐賀(招待講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 高濃度NO2ガスを用いた水素終端ダイヤモンド表面の正孔生成の面方位依存性2012
- Author(s)
  嘉数誠、佐藤寿志
- Organizer
  第26回ダイヤモンドシンポジウム301
- Place of Presentation
  東京(口頭講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 高濃度NO2ガスを用いた様々な面方位をもつ水素終端ダイヤモンド表面へのホールドーピング2012
- Author(s)
  嘉数誠、佐藤寿志
- Organizer
  2012年秋季応用物理学会13P-C12-9
- Place of Presentation
  愛媛大学(口頭講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 半導体気相成長の過飽和度とステップフロー.核形成2012
- Author(s)
  嘉数誠
- Organizer
  結晶成長学会、第36回結晶成長討論会
- Place of Presentation
  唐津(招待講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Single-crystalline nitride growth on diamond, E1.1.2012
- Author(s)
  K. Hirama, Y. Taniyasu. and M.Kasu
- Organizer
  6th International New Diamond and Nano Carbons Conference (NDNC 2012)
- Place of Presentation
  San Juan, Puerto Rico(招待講演)
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE2011
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  名古屋
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 表面過飽和度制御によるGaNステップフリー面の形成2011
- Author(s)
  赤坂哲也, 小林康之, 嘉数誠
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス(春日市)(招待講演)
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 表面過飽和度制御によるGaN ステップフリー面の形成2011
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  福岡(招待講演IN3)
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] GaN のMOVPE成長における表面過飽和度に及ぼすキャリアガスの影響2011
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木(26a-BY-5)
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of step-free GaN surface at low temperature of 770 oC by controlling surface supersaturation2011
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  グラスゴー(英国)
- Year and Date
  2011-07-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE2011
- Author(s)
  T.Akasaka, Y.Kobayashi, M.Kasu
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  ウインクあいち(名古屋市)
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of step-free GaN surface at low temperature of 770C by controlling surface supersaturation2011
- Author(s)
  T.Akasaka, Y.Kobayashi, M.Kasu
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  SECCカンファレンスセンター,(グラスゴー,UK)
- Year and Date
  2011-07-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 窒化ガリウムのステップフリー面の作製と成長機構2010
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  真空・表面科学合同講演会
- Place of Presentation
  大阪(4Ca-06)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and spiral growth of GaN studied by selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM2010)
- Place of Presentation
  東京
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Step-free GaN hexagons grown by selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  3rd International Symposium on Growth of III-nitrides (ISGN-3)
- Place of Presentation
  モンペリエ(フランス)(招待講演)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPE におけるGaN スパイラルおよび核成長速度の基板温度依存性評価2010
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎(15p-C-6)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Step-free GaN hexagons grown by selective-area metalorganic vaporphase epitaxy(Invited)2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
- Organizer
  3rd International Symposium on Growth of III-nitrides
- Place of Presentation
  コラム(モンペリエ,フランス)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and spiral growth of GaN studied by selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi Makoto Kasu
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPEにおけるGaNスパイラルおよび核成長速度の基板温度依存性評価2010
- Author(s)
  赤坂哲也, 小林康之, 嘉数誠
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] ダイヤモンドMOSFETのゲート容量の周波数依存性
- Author(s)
  原田和也、平間一行、大石敏之、嘉数　誠
- Organizer
  2014年秋季応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Diamond RF Power Transistors: Present Status and Challenges
- Author(s)
  M. Kasu
- Organizer
  15th IUMRS International Conference in Asia (IUMRS-ICA)
- Place of Presentation
  福岡
- Year and Date
  2014-08-24 – 2014-08-30
- Invited
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] シンクロトロンX線トポグラフィー透過法によるHPHT単結晶ダイヤモンドの転位の観察
- Author(s)
  桝谷聡士、村上竜一、角谷均、嘉数　誠
- Organizer
  第28回ダイヤモンドシンポジウム
- Place of Presentation
  東京
- Year and Date
  2014-11-19 – 2014-11-21
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] (-201)及びB 面β-Ga2O3 単結晶のシンクロトロン単色X 線トポグラフィー観察
- Author(s)
  桝谷聡士, 村上竜一, 輿　公祥倉又　朗人、飯塚　和幸, 嘉数　誠
- Organizer
  2014年秋季応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] シンクロトロンX線トポグラフィーによる高品質高温高圧合成ダイヤモンド単結晶の転位の種類の同定
- Author(s)
  嘉数　誠，村上竜一、桝谷聡士、原田和也、角谷　均
- Organizer
  2014年結晶成長学会国内会議
- Place of Presentation
  東京
- Year and Date
  2014-11-06 – 2014-11-08
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] シンクロトロン光・単色X線トポグラフィーによる高温高圧合成ダイヤモンド単結晶の反りの高精度測定
- Author(s)
  嘉数誠、村上竜一、桝谷聡士、原田和也、角谷均
- Organizer
  2014年秋季応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Dislocation Identification of HPHT Diamond Single Crystal Using Synchrotron
- Author(s)
  M. Kasu, R. Murakami, S. Masuya, A. Matsunaga, K. Harada, and H. Sumiya
- Organizer
  International Conference on Diamond and Related Carbons 2014 (ICDCM2014)
- Place of Presentation
  Madrid
- Year and Date
  2014-09-07 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 高移動度-Ga2O3単結晶(-201 )を用いたショットキーバリアダイオードの作製
- Author(s)
  古賀優太、原田和也、大石敏之、嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  平塚
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] パワー半導体ダイヤモンド単結晶の放射光X線トポグラフィ観察
- Author(s)
  村上竜一、嘉数誠
- Organizer
  九州シンクロトロン光研究センター・産業総合研究所合同シンポジウム
- Place of Presentation
  鳥栖
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ynchrotron X-ray Topography Observation of β-Ga2O3 Single Crystals
- Author(s)
  M. Kasu, S. Masuya, R. Murakami, A. Kuramata, K. Koshi
- Organizer
  Materials Research Society Fall Meeting
- Place of Presentation
  Boston
- Year and Date
  2014-11-30 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Dislocation Identification of HPHT and CVD Diamond Single Crystals Using Synchrotron Radiation X-ray Topograph
- Author(s)
  M. Kasu, R. Murakami, S. Masuya, K. Harada, and H. Sumiya
- Organizer
  Materials Research Society Fall Meeting
- Place of Presentation
  Boston
- Year and Date
  2014-11-30 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ダイヤモンド単結晶のX線トポグラフィ評価、マイクロ波プラズマCVD成長と高圧高温合成の比較
- Author(s)
  村上竜一、嘉数誠、桝谷聡士、原田和也、角谷均
- Organizer
  電気学会プラズマ研究会
- Place of Presentation
  長崎
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Ni/Auを用いた𝛽–Ga2O3のショットキーバリアダイオードの作製
- Author(s)
  古賀優太、原田和也、大石敏之、嘉数誠
- Organizer
  2014年応用物理学会九州支部大会
- Place of Presentation
  大分
- Year and Date
  2014-12-06 – 2014-12-07
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] メガソーラー測定データを用いた太陽電池セル温度の推定
- Author(s)
  原重臣，嘉数誠，松井則明
- Organizer
  電気学会全国大会
- Place of Presentation
  東京
- Year and Date
  2015-03-24 – 2015-03-26
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 高圧高温合成ダイヤモンド単結晶のX線トポグラフィー観察による転位の同定
- Author(s)
  村上竜一、桝谷　聡士、原田　和也、嘉数　誠、輿　公祥、倉又　朗人、飯塚　和幸
- Organizer
  2014年応用物理学会九州支部大会
- Place of Presentation
  大分
- Year and Date
  2014-12-06 – 2014-12-07
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Device Operation Analysis of Diamond MOSFET Obtained by Capacitance–Voltage Characteristics
- Author(s)
  K. Harada, K. Hirama, T. Oishi, M. M. Kasu
- Organizer
  International Conference on Diamond and Related Carbons 2014 (ICDCM2014)
- Place of Presentation
  Madrid
- Year and Date
  2014-09-07 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 大面積化に向けたダイヤモンド・エピタキシャル成長技術の現状と研究課題
- Author(s)
  嘉数誠
- Organizer
  先端技術加工ネットワーク研究会
- Place of Presentation
  東京
- Invited
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] シンクロトロンX線トポグラフィーによる(110)高温高圧合成ダイヤモンド単結晶の観察
- Author(s)
  嘉数誠、村上竜一、桝谷聡士、植松卓也、角谷均
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  平塚
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ダイヤモンドMOSFETの容量電圧測定によるMOS構造のエネルギー構造の解析
- Author(s)
  原田和也、平間一行、古賀優太、大石敏之、嘉数　誠
- Organizer
  第28回ダイヤモンドシンポジウム
- Place of Presentation
  東京
- Year and Date
  2014-11-19 – 2014-11-21
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] NO2吸着・水素終端ダイヤモンド／ALD成長Al2O3界面の放射光XPS/UPSによる電子状態評価
- Author(s)
  嘉数誠，高橋和敏，今村真幸，平間一行
- Organizer
  表面科学会学術講演会
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ソーラーパネルのホットスポット観察と電流電圧特性
- Author(s)
  田中　裕之、中村　圭宏、原　重臣、嘉数　誠、松井　則明
- Organizer
  2014年応用物理学会九州支部大会
- Place of Presentation
  大分
- Year and Date
  2014-12-06 – 2014-12-07
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Synchrotron X-ray Topography Observation of CVD Diamond Single Crystal
- Author(s)
  S. Masuya, R. Murakami, K. Harada, H. Sumiya , M. Kasu
- Organizer
  International Conference on Diamond and Related Carbons 2014 (ICDCM2014)
- Place of Presentation
  Madrid
- Year and Date
  2014-09-07 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] マイクロ波プラズマCVD成長ダイヤモンドを用いたパワー高周波FET
- Author(s)
  嘉数誠
- Organizer
  電気学会プラズマ研究会
- Place of Presentation
  長崎
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] High electron mobility of EFG-grown β-Ga2O3 single crystal
- Author(s)
  K. Harada, A. Matsunaga, S. Masuya, K. Koshi, A. Kuramata, and M. Kasu
- Organizer
  15th IUMRS International Conference in Asia (IUMRS-ICA)
- Place of Presentation
  福岡
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] Diamond MOS Interface Properties Studied by XPS/UPS/XANES and C-V Measurements
- Author(s)
  M. Kasu, K. Hirama, K. Harada, M. Imamura, K. Takahashi, K. Shiraishi
- Organizer
  The 7th International Symposium on Surface Science
- Place of Presentation
  松江
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] ダイヤモンドパワー素子技術
- Author(s)
  嘉数　誠
- Organizer
  公益社団法人応用物理学会　集積化MEMS技術研究会主催
- Place of Presentation
  熊本
- Year and Date
  2014-05-29 – 2014-05-30
- Invited
- Data Source
  KAKENHI-PROJECT-24360124
[Presentation] 太陽電池モジュールの半導体素子としての電気的特性解析
- Author(s)
  田中　裕之，中村　圭宏，原　重臣，嘉数　誠松井　則明
- Organizer
  電気学会全国大会
- Place of Presentation
  東京
- Year and Date
  2015-03-24 – 2015-03-26
- Data Source
  KAKENHI-PROJECT-24360124
[]
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[]

1. Shigekawa Naoteru (60583698)

# of Collaborated Projects: 3 results

# of Collaborated Products: 14 results
2. 高橋和敏 (30332183)

# of Collaborated Projects: 3 results

# of Collaborated Products: 4 results
3. 梁剣波 (80757013)

# of Collaborated Projects: 3 results

# of Collaborated Products: 14 results
4. 大石敏之 (40393491)

# of Collaborated Projects: 2 results

# of Collaborated Products: 45 results
5. SEMBA Koichi (50393773)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. NEMOTO Kae (80370104)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
7. SAITO Shiro (90393777)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
8. KAKUYANAGI Kousuke (40417093)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
9. NAKANO Hayato (60393774)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
10. ZHU Xiaobo (70536226)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
11. KARIMOTO Shinichi (80393734)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
12. MIZUOCHI Norikazu (00323311)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
13. AKASAKA Tetsuya (90393735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
14. GOTOH Hideki (10393795)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. KOBAYASHI Yasuyuki (90393727)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
16. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
17. 大野裕 (80243129)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. SAHA・NILOY CHANDRA (20933089)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. UEDA Osamu

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
20. EVERITT Mark Stanly

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
21. EVERITT MarkStanley

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
22. 大友明

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
23. 吉松公平

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

KASU Makoto 嘉数 誠

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サファイア、SiC基板上ダイヤモンドヘテロエピタキシャル成長とMOSFETへの応用Principal Investigator

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Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched SubstratePrincipal Investigator

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Control of nanostructures of directly-bonded Si/diamond interfaces by annealing

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Fundamental Study on Cubic Diamond Heteroepitaxial Growth on Trigonal Sapphire SubstratePrincipal Investigator

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Direct bonding of widegap semiconductors and diamond for high-efficiency devices and investigation of bonding interface characteristics

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Room temperature bonding of diamond to Si for power device application and clarification of bonding mechanism

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Measurements and analysis of electronic properties and interface structure of diamond MOS structures with extremely high two-dimensional carrier concentrationPrincipal Investigator

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Extremely high density carrier doping mechanism on diamond and application to the next generation devicesPrincipal Investigator

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Research on Quantum Memory using Superconducting Artificial Atoms

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Research on step-free heterostructures of nitride semiconductors

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[Book] 次世代パワーエレクトロニクスの課題と評価技術2022

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[Book] スマートフォン・タッチパネル部材の最新技術便覧2013

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[Journal Article] AC Stable (100 h) Operation of NO2 p-Type Doped Diamond MOSFETs2023

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KASU Makoto 嘉数誠