Nakane Ryosho 中根了昌

… Alternative Names

中根了昌ナカネリョウショウ

NAKANE Ryosho 中根了昌

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Researcher Number	50422332
Other IDs
Affiliation (Current)	2022: 東京大学, 大学院工学系研究科(工学部), 特任准教授
Affiliation (based on the past Project Information) *help	2020 – 2022: 東京大学, 大学院工学系研究科(工学部), 特任准教授 2013 – 2016: 東京大学, 工学(系)研究科(研究院), 准教授 2015: 東京大学, 大学院工学系研究科, 特任准教授 2012: 東京大学, 工学(系)研究科(研究院), 講師 2009 – 2011: The University of Tokyo, 大学院・工学系研究科, 特任講師 … More 2010: The University of Tokyo, 大学院・工学系研究科, 講師 2008: The University of Tokyo, 大学院・工学系研究科, 助教 2007: The University of Tokyo, 大学院・工学系研究科, 特任助教 2006: 東京大学, 大学院工学系研究科, 特任助教 2006: 東京大学, 大学院工学系研究科・TST派遣研究員 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electron device/Electronic equipment / Applied materials science/Crystal engineering / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Electron device/Electronic equipment / Microdevices/Nanodevices / Science and Engineering / Engineering
Keywords	Principal Investigator スピンエレクトロニクス / 電子デバイス・機器 / 電子・電気材料 / 結晶成長 / 電子デバイス / スピントロニクス / 先端機能デバイス / 電気・電子材料 / 磁性 / 量子閉じ込め … More / 電子材料 / 電界効果型トランジスタ / 強磁性シリサイド / 次世代高機能デバイス / 新規磁性材料作製法 / 量子デバイス / スピンデバイス / 電子デバイス・電子機器 / 複合材料・物性 / 集積回路デバイス / crystal growth / spintronics / 磁性材料 / 表面・界面物性 / 強磁性薄膜 / 半導体デバイス / 薄膜 / 半導体スピントロニクス / シリコンデバイス … More Except Principal Investigator スピン / 磁性半導体 / 再構成可能 / MnAs / GaMnAs / 分子線エピタキシー / スピントランジスタ / スピンMOSFET / 強磁性半導体 / トンネル磁気抵抗効果 / 共鳴トンネル効果 / 半導体 / 共鳴トンネル / スピンデバイス / スピントロニクス・デバイス / 微粒子 / トンネル磁気抵抗 / 不揮発性メモリ / ヘテロ構造 / 電子デバイス・集積回路 / リコンフイギャラブル / スピントラジスタ / スピン起電力 / リコンフィギャラブル / 強磁性トンネル接合 / スピントランジスタを / ナノスピンデバイス / GeFe / 磁性体 / ナノ構造 / スピントロニクス / バンドエンジニアリング / スピン依存伝導 / 量子井戸 / 波動関数工学 / LED / 強磁性体 / ナノ微粒子 / トンネル効果 / 不揮発性 / デバイス Less

シリコンを含む磁性接合におけるスピン伝導物理の解明と制御Principal Investigator
- Principal Investigator
  
  中根了昌
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  The University of Tokyo
Fabrication of epitaxial Ferrite thin films on Si substrates and their application to spintronic devicesPrincipal Investigator
- Principal Investigator
  
  Nakane Ryosho
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
III-V semiconductor-based spin transistors: fabrication techniquePrincipal Investigator
- Principal Investigator
  
  Nakane Ryohso
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
磁性体/半導体ハイブリッドナノ構造におけるスピン関連現象とデバイス応用
- Principal Investigator
  
  田中雅明
- Project Period (FY)
  2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  The University of Tokyo
Fabrication of spin-filter magnetic-hetero structures and their applications to electronic devicesPrincipal Investigator
- Principal Investigator
  
  NAKANE Ryosho
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Semiconductor Materials and Devices with Nonvolatile and Reconfigurable Functions
- Principal Investigator
  
  TANAKA Masaaki
- Project Period (FY)
  2011 – 2015
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  The University of Tokyo
Creation of oxide heterostructures with magnetic particles and their application to semiconductor-based electronic devicesPrincipal Investigator
- Principal Investigator
  
  NAKANE Ryosho
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Investigation of carrier spin related phenomena in Si and its application to spin-functional devicesPrincipal Investigator
- Principal Investigator
  
  NAKANE Ryosho
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Reconfigurable Nano-Spin Devices
- Principal Investigator
  
  TANAKA MASAAKI (TANAKA Masaaki)
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
強磁性体からSiへのスピン注入とスピン蓄積効果に関する研究Principal Investigator
- Principal Investigator
  
  中根了昌
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo

All 2020 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 Other

All Journal Article Presentation Book

[Book] 第19回「半導体スヒン工学の基礎と応用」研究会 19th Conference on the Physics and Applications of Spin-related Phenomena in Semiconductors PASPS-192014
- Author(s)
  田中雅明、大矢忍、中根了昌
- Total Pages
  122
- Publisher
  PASPS-19実行委員会
- Description
  【発行確定】
- Data Source
  KAKENHI-PROJECT-23000010
[Journal Article] Enhancement of Room-Temperature Effective Spin Diffusion Length in a Si-Based Spin MOSFET With an Inversion Channel2020
- Author(s)
  R. Nakane, S. Sato, and M. Tanaka
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 8 Pages: 807-812
- DOI
  10.1109/jeds.2020.2993705
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02199
[Journal Article] Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+－Si source/drain regions2020
- Author(s)
  S. Sato, M. Tanaka, and R. Nakane
- Journal Title
  
  Physical Review B
  
  Volume: 102 Pages: 035305-035305
- DOI
  10.1103/physrevb.102.035305
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02199
[Journal Article] Structural and magnetic properties of ferromagnetic Fel-xSix (0.18<x<0.33) films formed by rapid thermal annealing on silicon-on-insulator substrates2015
- Author(s)
  Ryosho Nakane, Satoshi Sugahara, and Masaaki Tanaka
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 117
- DOI
  10.1063/1.4915335
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23000010
[Journal Article] Origin of the broad three-terminal Hanle signals in Fe/Si02/Si tunnel junctions2015
- Author(s)
  Shoichi Sato, Ryosho Nakane, and Masaaki Tanaka
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 107
- DOI
  10.1063/1.4926969
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23000010
[Journal Article] Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge1-xFex with and without boron doping2014
- Author(s)
  Yoshisuke Ban, Yuki Wakabayashi, Ryota Akiyama, Ryosho Nakane, and Masaaki Tanaka
- Journal Title
  
  AIP advances
  
  Volume: 4
- DOI
  10.1063/1.4895109
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-23000010, KAKENHI-PROJECT-26870086
[Journal Article] Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip2014
- Author(s)
  R. Nakane, Y. Shuto, H. Sukegawa, Z.C. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, and S. Sugahara
- Journal Title
  
  Solid State Electronics
  
  Volume: 102 Pages: 52-58
- DOI
  10.1016/j.sse.2014.06.004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000010
[Journal Article] Appearance of Anisotropic Magnetoresistance and Electric Potential Distribution in Si-based Multi-terminal Devices with Fe Electrodes2012
- Author(s)
  Ryosho Nakane, Shoichi Sato, Shun Kokutani, and Masaaki Tanaka
- Journal Title
  
  Magnetics Lett
  
  Volume: 3
- Data Source
  KAKENHI-PROJECT-23686049
[Journal Article] Appearance of Anisotropic Magnetoresistance and Electric Potential Distribution in Si-based Multi-terminal Devices with Fe Electrodes2012
- Author(s)
  Ryosho Nakane
- Journal Title
  
  Magnetics letters
  
  Volume: 3
- DOI
  10.1109/lmag.2012.2201698
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000010, KAKENHI-PROJECT-23686049
[Journal Article] Magnetoresistance of a Spin Metal-Oxide-Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts2010
- Author(s)
  R.Nakane, T.Harada, K.Sugiura, S.Sugahara, M.Tanaka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  210000069374
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106007
[Journal Article] Magnetoresistance of a Spin Metal-Oxide-Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts2010
- Author(s)
  R.Nakane, T.Harada, K.Sugiura, S.Sugahara, M.Tanaka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- NAID
  210000069374
- Data Source
  KAKENHI-PROJECT-18106007
[Journal Article] A new spin-functional MOSFET based on magnetic tunnel junction technology : pseudo-spin-MOSFET2010
- Author(s)
  Y.Shuto, R.Nakane, W.Wang, H.Sukegawa, S.Yamamoto, M.Tanaka, K.Inomata, S.Sugahara
- Journal Title
  
  Applied Physics Express 3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106007
[Journal Article] Magnetoresistance of a Spin Metal-Oxide-Semiconductor Field-Effect Transistor (spin MOSFET) with Ferromagnetic MnAs Source and Drain Contacts2010
- Author(s)
  R.Nakane, T.Harada, K.Suigura, M.Tanaka
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: Vol.49 Pages: 1130001-1130004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686023
[Journal Article] Magnetoresistance of a Spin Meta 1-Oxide-Semiconductor Field-Effect Transistor (spin MOSFET) with Ferromagnetic MnAs Source and Drain Contacts2010
- Author(s)
  R.Nakane, T.Harada, K.Suigura, M.Tanaka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
  
  Pages: 1130001-1130004
- Data Source
  KAKENHI-PROJECT-20686023
[Journal Article] Formation of Si and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors2008
- Author(s)
  Y.Taakamura, A. Nisnijima, Y . Nagahama, R. Nakane, and S. C.sugahara
- Journal Title
  
  ECS Transactions 16
  
  Pages: 945-952
- NAID
  120006581933
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686023
[Journal Article] Characterization of halfmetallic L21-phase Co2FeSi full-Heusler alloy thin films formed by rapid thermal annealing2008
- Author(s)
  Y. Takamura, R. Nakane, H. Munekata, and. S. Sugahara
- Journal Title
  
  Journal of Applied Physics 103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686023
[Journal Article] Preparation and characterization of ferromagnetic DO_3-phase Fe_3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications2006
- Author(s)
  Ryosho Nakane
- Journal Title
  
  Applied Physics Letters 89
  
  Pages: 192503-192503
- Data Source
  KAKENHI-PROJECT-18760010
[Journal Article] "Schottky barrier height of ferromagnet/Si(001) junctions" Appl. Phys. Lett. 89,072110/1-3(2006).2006
- Author(s)
  K.Sugiura, R.Nakane, S.Sugahara, M.Tanaka
- Journal Title
  
  Applied Physics Letters 89
- Data Source
  KAKENHI-PROJECT-18106007
[Journal Article] Preparation and characterization of ferromagnetic DO3-phase Fe3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications2006
- Author(s)
  R.Nakane, M.Tanaka, S.Sugahara
- Journal Title
  
  Applied Physics Letters 89
- Data Source
  KAKENHI-PROJECT-18106007
[Journal Article] Appearance of Anisotropic Magnetoresistance and Electric Potential Distribution in Si-based Multi-terminal Devices with Fe Electrodes
- Author(s)
  Ryosho Nakane, Shoichi Sato, Shun Kokutani, and Masaaki Tanaka
- Journal Title
  
  Magnetics Lett
  
  Volume: (in press)
- Data Source
  KAKENHI-PROJECT-22656071
[Presentation] Effect of forming gas annealing on the enhancement of the electron spin lifetime in the inversion channel of Si-based spin MOSFETs2020
- Author(s)
  S. Sato, S. Okamoto, M. Tanaka, and R. Nakane
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02199
[Presentation] Siへのスピン注入におけるトンネルスピン分極率の温度依存性の解析2020
- Author(s)
  岡本祥太、佐藤彰一、田中雅明、中根了昌
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02199
[Presentation] Spin-flip Mechanism in a Si Inversion Layer of Spin MOSFETs2020
- Author(s)
  R. Nakane, S. Sato, S. Okamoto, and M, Tanaka
- Organizer
  The 78th Device Research Conference (DRC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02199
[Presentation] シリコンベーススピン電界効果型トランジスタのデバイス物理2020
- Author(s)
  中根了昌、佐藤彰一、田中雅明
- Organizer
  スピントロニクス学術研究基盤と連携ネットワーク拠点　2020 年度（令和２年度）年次報告会
- Invited
- Data Source
  KAKENHI-PROJECT-20H02199
[Presentation] , Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions2020
- Author(s)
  S. Sato, S. Okamoto, M. Tanaka, and R. Nakane
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02199
[Presentation] Electronic structure and magnetic properties of magnetic dead layers in epitaxial CoFe2O4/Al2O3/Si(111) films studied by X-ray magnetic circular dichroism (XMCD)2017
- Author(s)
  2)Yuuki Wakabayashi, Yosuke Nonaka, Yukiharu Takeda, Shoya Sakamoto, Keisuke Ikeda, Zhendong Chi, Goro Shibata, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori, and Ryosho Nakane
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26289086
[Presentation] Epitaxial NiFe2O4 films grown on Si(111) substrates2016
- Author(s)
  R. Nakane and M. Tanaka
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26289086
[Presentation] Growth, structure, and magnetic properties of epitaxial NiFe2O4 films grown on Si(111) substrates2016
- Author(s)
  R. Nakane and M. Tanaka
- Organizer
  61ST anuual Conference on Magnetism and Magnetic Materials
- Place of Presentation
  New Orleans
- Year and Date
  2016-10-31
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289086
[Presentation] Fe/Sio2/Si接合における三端子ハンルシグナルの起源2015
- Author(s)
  佐藤彰一、中根了昌、田中雅明
- Organizer
  東京大学固体エレクトロニクス・光エレクトロニクス研究会
- Place of Presentation
  東京大学生産技術研究所(東京都目黒区)
- Year and Date
  2015-03-16
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Structurral, magnetic, and electrical properties of thermally-formed MnP electrodes on InP(001)2015
- Author(s)
  G. Song, R. Nakane, and M. Tanaka
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26630150
[Presentation] IV族強磁性半導体Gel-yFey/Ge : B/Ge1-xFex三層ヘテロ構造における磁気抵抗効果2015
- Author(s)
  伴芳祐、中根了昌、田中雅明
- Organizer
  2015春季応用物理学会講演会
- Place of Presentation
  東海大学湘南キャンパス(神奈川県平塚市)
- Year and Date
  2015-03-11
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Structural, magnetic, and electrical properties of thermally-formed MnPelectrodes on InP (001)2015
- Author(s)
  Guibin Song, Ryosho Nakane, and Masaaki Tanaka
- Organizer
  2015年秋季第76回応用物理学会学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県名古屋市)
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] IV族強磁性半導体Gel-yFey/Ge : B/Ge1-xFex三層ヘテロ構造における磁気抵抗効果2015
- Author(s)
  伴芳祐、中根了昌、田中雅明
- Organizer
  第6回東京大学低温センター研究交流会
- Place of Presentation
  東京大学小柴ホール(東京都文京区)
- Year and Date
  2015-03-04
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] 強磁性金属/絶縁膜/半導体構造におけるスピン依存磁気抵抗効果とその起源2014
- Author(s)
  佐藤彰一、中根了昌、田中雅明
- Organizer
  東京大学固体エレクトロニクス研究会・光エレクトロニクス研究会
- Place of Presentation
  東京天学工学部2号館(東京都文京区)
- Year and Date
  2014-03-12
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Fe/SiO2/Si接合における三端子ハンルシグナルの起源2014
- Author(s)
  佐藤彰一、中根了昌、田中雅明
- Organizer
  第19回「半導体スピン工学の基礎と応用」研究会
- Place of Presentation
  東京大学本郷キャンパス武田先端知ビル5階武田ホール(東京都文京区)
- Year and Date
  2014-12-15
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Fe/SiO2/Si接合における三端子Hanle信号の磁場方向依存性2014
- Author(s)
  佐藤彰一、中根了昌、田中雅明
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-20
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] IV族強磁性半導体GehFexにおけるスピン依存伝導2014
- Author(s)
  伴芳祐、中根了昌、大矢忍、田中雅明
- Organizer
  東京大学固体エレクトロニクス研究会・光エレクトロニクス研究会
- Place of Presentation
  東京大学工学部(東京都文京区)
- Year and Date
  2014-03-12
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] 三端子Hanle信号の理論的解析2014
- Author(s)
  佐藤彰一、中根了昌、田中雅明
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-20
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Spin-transistor characteristics of pseudo-spin-MOSFETs monolithically-integrated by utilizing a multi-project-wafer CMOS chip2013
- Author(s)
  R. Nakane, Y. Shuto, H. Sukegawa, Z. C. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, and S. Sugahara
- Organizer
  2013 International Conference on Solid-State Devices and Materials (SSDM 2013)
- Place of Presentation
  ヒルトン福岡シーホーク(福岡県福岡市中央区)
- Year and Date
  2013-09-27
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip Ifabricated through multi-project wafer service - A new route to more-than-Moore research -2013
- Author(s)
  R. Nakane, Y. Shuto, H. Sukegawa, Z. C. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, and S. Sugahara
- Organizer
  43rd European Solid-State Device Research Conference
- Place of Presentation
  JW Marriott Bucharest Grand Hotel (Bucharest, Romania)
- Year and Date
  2013-09-19
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Analysis of 3-terminal Hanle signals in Si-based spintronic devices2013
- Author(s)
  S. Sato, R. Nakane, M. Tanaka
- Organizer
  American Physical Society, Annual APS March Meeting
- Place of Presentation
  Baltimore convention center, Hilton Baltimore, Boltimore, Maryland, USA (C18.00007)
- Year and Date
  2013-03-18
- Data Source
  KAKENHI-PROJECT-23686049
[Presentation] Fabrication and characterization of pseudo-spin-MOSFETs using a multi-project CMOS wafer2013
- Author(s)
  R. Nakane, Y. Shuto, H. Sukegawa, Z. C. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, and S. Sugahara
- Organizer
  58th Annual Magnetism and Magnetic Materials (MMM) Conference
- Place of Presentation
  the Sheraton Denver Downtown Hotel (Denver, Colorado, USA)
- Year and Date
  2013-11-08
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Electrical state in spin devices for nonlocal measurements2012
- Author(s)
  Ryosho Nakane
- Organizer
  7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII)
- Place of Presentation
  Eindhoven,Netherlands
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] 磁性体電極を持つ半導体デバイスの磁気伝導特性2012
- Author(s)
  佐藤彰一、中根了昌、田中雅明
- Organizer
  東京大学低温センター研究交流会
- Place of Presentation
  東京大学本郷キャンパス小柴ホール
- Year and Date
  2012-03-05
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Materials and Devices for Semiconductor Spintronics : Si-based Spintronics2012
- Author(s)
  Ryosho Nakane and Masaaki Tanaka
- Organizer
  1st Annual World Congress of Advanced Materials-2012 (WCAM2012)
- Place of Presentation
  Beijing International Convention Center, Beijin China, (Session 6-3)
- Data Source
  KAKENHI-PROJECT-23686049
[Presentation] Materials and devices for semiconductor spintronics : Si-based spintronics2012
- Author(s)
  Ryosho Nakane
- Organizer
  1st Annual World Congress of Advanced Materials (WCAM-2012)
- Place of Presentation
  Beijing, China
- Invited
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Materials and Devices for Semiconductor Spintronics: Si-based Spintronics2012
- Author(s)
  R. Nakane
- Organizer
  1st Annual World Congress of Advanced Materials-2012 (WCAM2012)
- Place of Presentation
  Beijin, China
- Invited
- Data Source
  KAKENHI-PROJECT-23686049
[Presentation] Electrical state in spin devices for nonlocal measurements2012
- Author(s)
  R. Nakane, S. Sato, S. Kokutani, and M. Tanaka
- Organizer
  The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS VII)
- Place of Presentation
  Eindhoven University of Technology, the Netherlands
- Data Source
  KAKENHI-PROJECT-23686049
[Presentation] Electrical state in spin devices for nonlocal measurements2012
- Author(s)
  R. Nakane
- Organizer
  The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS VII)
- Place of Presentation
  Eindhoven, the Netherlands
- Data Source
  KAKENHI-PROJECT-23686049
[Presentation] Siチャネル及びFe電極を有する多端子横型デバイスにおける非局所信号への異方性磁気抵抗効果の影響2011
- Author(s)
  佐藤彰一、中根了昌、國谷瞬、田中雅明
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-20686023
[Presentation] 第16回半導体スピン工学の基礎と応用2011
- Author(s)
  佐藤彰一,中根了昌,國谷瞬,田中雅明
- Organizer
  東京工業大学博物館・百年記念館
- Place of Presentation
  フェライト会議室
- Year and Date
  2011-11-29
- Data Source
  KAKENHI-PROJECT-22656071
[Presentation] 強磁性電極を有する半導体ベース多端子デバイスにおける電気伝導:デバイス構造が非局所信号へ与える影響2011
- Author(s)
  佐藤彰一, 中根了昌, 國谷瞬, 田中雅明
- Organizer
  第16回半導体スピン工学の基礎と応用(PASPS-16)
- Place of Presentation
  東京工業大学博物館・百年記念館フェライト会議室,E4
- Year and Date
  2011-11-29
- Data Source
  KAKENHI-PROJECT-22656071
[Presentation] Siチャネル及びFe電極を有する多端子横型デバイスにおける非局所信号への異方性磁気抵抗効果の影響2011
- Author(s)
  佐藤彰一,中根了昌,國谷瞬,田中雅明
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学,神奈川
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-22656071
[Presentation] 強磁性電極を有する半導体ベース多端子デバイスにおける電気伝導:デバイス構造が非局所信号へ与える影響2011
- Author(s)
  佐藤彰一、中根了昌、國谷瞬、田中雅明
- Organizer
  第16回「半導体スピン工学の基礎と応用」研究会(PASPS-16)
- Place of Presentation
  東京工業大学博物館・百年記念館(大岡山キャンパス)
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] Influence of anisotropic magnetoresistance on nonlocal signals in multi-terminal lateral devices with a Si channel and Fe electrodes2011
- Author(s)
  S.Sato, R.Nakane, S.Kokutani, M.Tanaka
- Organizer
  Three-University-Symposium on Nano-manufacturing and Nanotechnology, Nanotechnology for Advanced Electronics, Photonics, and Sensing
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-23000010
[Presentation] 第16回半導体スピン工学の基礎と応用2011
- Author(s)
  佐藤彰一, 中根了昌, 國谷瞬, 中雅明
- Organizer
  (PASPS-16)
- Place of Presentation
  東京工業大学博物館・百年記念館フェライト会議室, E4
- Year and Date
  2011-11-29
- Data Source
  KAKENHI-PROJECT-23686049
[Presentation] 強磁性電極を有する半導体ベース多端子デバイスにおける電気伝導:デバイス構造が非局所信号へ与える影響2011
- Author(s)
  佐藤彰一, 中根了昌, 國谷瞬, 田中雅明
- Organizer
  第16回半導体スピン工学の基礎と応用(PASPS-16)
- Place of Presentation
  東京工業大学博物館・百年記念館フェライト会議室,E4(招待講演)
- Year and Date
  2011-11-29
- Data Source
  KAKENHI-PROJECT-23686049
[Presentation] Influence of anisotropic magnetoresistance on nonlocal signals in multi-terminal lateral devices with a Si channel and Fe electrodes2010
- Author(s)
  S. Sato, R. Nakane, S. Kokutani, and M. Tanaka
- Organizer
  International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors(PASPS-VI)
- Place of Presentation
  the University of Tokyo, Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22656071
[Presentation] Fe電極を用いたスピンMOSFETにおけるスピン依存伝導特性2009
- Author(s)
  國谷瞬、中根了昌、佐藤彰一、菅原聡、田中雅明
- Organizer
  日本応用物理学会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20686023
[Presentation] シリコンMOS反転層へのスピン注入とスピンMOSFETへの応用2008
- Author(s)
  中根了昌, 原田智之, 杉浦邦晃, 菅原聡, 田中雅明
- Organizer
  第69回応用物理学会学術講演会3p-CA-3,予稿集p52
- Place of Presentation
  中部大学,春日井
- Data Source
  KAKENHI-PROJECT-20686023
[Presentation] Magnetoresistance in MOSFETs with ferromagnetic MnAs source and drain contacts : Spin injection and transport in Si MOS channels2008
- Author(s)
  R. Nakane, T. Harada, K. Sugiura, S. Susahara and M. Tanaka
- Organizer
  The 66th Device Research Conference (66th DRC)
- Place of Presentation
  Santa Barbara, CA, USA
- Data Source
  KAKENHI-PROJECT-20686023
[Presentation] シリコンMOS反転層へのスピン注入とスピンMOSFETへの応用2008
- Author(s)
  中根了昌, 原田智之, 杉浦邦晃, 菅原聡, 田中雅明
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学, 春日井
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-20686023
[Presentation] Magnetoresistance in MOSFETs with ferromagnetic MnAs source and drain contacts : Spin injection and transport in Si MOS channels2008
- Author(s)
  R.Nakane, T.Harada, K.Sugiura, S.Sugahara, M.Tanaka
- Organizer
  The 66^<th> Device Research Conference (66^<th> DRC)V.A-7, Conference Digest p227.
- Place of Presentation
  Santa Barbara, CA,USA
- Data Source
  KAKENHI-PROJECT-20686023
[Presentation] Siキャップ層による強磁性Fe_3Si薄膜形成温度の低温化2007
- Author(s)
  中根了昌
- Organizer
  第68回応用物理学会学術連合会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-18760010

1. Pham Nam Hai (50571717)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
2. TANAKA MASAAKI (30192636)

# of Collaborated Projects: 3 results

# of Collaborated Products: 25 results
3. OHYA Shinobu (20401143)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
4. SUGAHARA Satoshi (40282842)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
5. PALMSTROM Chris

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. AKIYAMA Ryota

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Nakane Ryosho 中根 了昌

中根 了昌 ナカネ リョウショウ

NAKANE Ryosho 中根 了昌

Research Projects

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Co-Researchers

シリコンを含む磁性接合におけるスピン伝導物理の解明と制御Principal Investigator

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Fabrication of epitaxial Ferrite thin films on Si substrates and their application to spintronic devicesPrincipal Investigator

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III-V semiconductor-based spin transistors: fabrication techniquePrincipal Investigator

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磁性体/半導体ハイブリッドナノ構造におけるスピン関連現象とデバイス応用

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Fabrication of spin-filter magnetic-hetero structures and their applications to electronic devicesPrincipal Investigator

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Semiconductor Materials and Devices with Nonvolatile and Reconfigurable Functions

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Creation of oxide heterostructures with magnetic particles and their application to semiconductor-based electronic devicesPrincipal Investigator

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Investigation of carrier spin related phenomena in Si and its application to spin-functional devicesPrincipal Investigator

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Reconfigurable Nano-Spin Devices

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強磁性体からSiへのスピン注入とスピン蓄積効果に関する研究Principal Investigator

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[Book] 第19回「半導体スヒン工学の基礎と応用」研究会 19th Conference on the Physics and Applications of Spin-related Phenomena in Semiconductors PASPS-192014

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Total Pages

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Description

Data Source

[Journal Article] Enhancement of Room-Temperature Effective Spin Diffusion Length in a Si-Based Spin MOSFET With an Inversion Channel2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+－Si source/drain regions2020

Author(s)

Journal Title

Nakane Ryosho 中根了昌

中根了昌ナカネリョウショウ

NAKANE Ryosho 中根了昌