YAMAGUCHI Tomohiro 山口智広

Researcher Number	50454517
Other IDs
Affiliation (Current)	2025: 工学院大学, 先進工学部, 教授
Affiliation (based on the past Project Information) *help	2024: 工学院大学, 先進工学部, 教授 2021 – 2022: 工学院大学, 先進工学部, 教授 2015 – 2020: 工学院大学, 先進工学部, 准教授 2015 – 2016: 工学院大学, 公私立大学の部局等, 准教授 2013 – 2014: 工学院大学, 工学部, 准教授 … More 2012: 立命館大学, 総合科学技術研究機構, ポストドクトラルフェロー 2011: 工学院大学, 工学部, 准教授 2010: 立命館大学, 立命館グローバル・イノベーション研究機構, ポストドクトラルフェロー 2010: 立命館大学, 総合理工学研究機構, ポストドクトラルフェロー 2009: Ritsumeikan University, 総合理工学研究機構, 研究員 2008: 立命館大学, 総合理工学・研究機構, 研究員 2007: 立命館大学, 総合理工学研究機構, 研究員 Less
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Crystal engineering / Electronic materials/Electric materials Except Principal Investigator Applied materials science/Crystal engineering / Medium-sized Section 30:Applied physics and engineering and related fields / Basic Section 30010:Crystal engineering-related / Science and Engineering / Electronic materials/Electric materials / Crystal engineering / Electron device/Electronic equipment / Science and Engineering
Keywords	Principal Investigator ナノコラム / 薄膜 / 分子線エピタキシー（MBE） / InGaN / 窒化物半導体 / 量子構造 / 赤色発光 / 赤色LED / X線その場観察 / MBE … More / ヘテロ界面 / ヘテロエピタキシャル成長 / In系窒化物半導体 / MBE、エピタキシャル / 半導体物性 / 電子・電気材料 / エピタキシャル成長 / 結晶成長 / 分子線エピタキシー法 / 作製・評価技術 / 混晶 / 製作・評価技術 / 薄膜・量子構造 / 分子線エピタキシー / 半導体 … More Except Principal Investigator MBE / InGaN / InN / 分子線エピタキシー / p型ドーピング / 分子線エピタキシー法 / 窒化インジウム / 窒化物半導体 / RF-MBE / 窒化物 / X線回折 / 酸化物 / 窒化ガリウム / MIS構造 / p形ドーピング / ナノコラム / DERI法 / 窒化インジウムガリウム / レーザ / LED / 三原色集積型光デバイス / Ｘ線回折 / その場X線回折 / 放射光 / グラフェン / MBE成長 / 放射光利用 / 拡張熱力学解析 / 相整合混晶 / 相混在面 / 反応解析 / 相混在 / バンドエンジニアリング / 格子引き込み / 混晶成長 / 発現相制御 / 非熱平衡 / 熱平衡 / Ⅲ族セスキ酸化物半導体 / ハライド気相成長法 / ミスト化学気相堆積法 / 非熱平衡成長 / 熱平衡成長 / 準安定相 / 安定相 / Ⅲ族セスキ酸化物半導体結晶 / 先端機能デバイス / 半導体物性 / 不活性化 / リーク電流 / 転位 / 極微領域評価 / 混晶組成 / x線回折 / GaN / 透明電極 / リフトオフ / 結晶成長 / 分子線エピタキシャル成長法 / 発光ダイオード / X線光電子分光法 / ケルビン力顕微鏡 / ショットキー電極 / オーミック電極 / KOH / ウェットエッチング / 極性 / ドライエッチング / DERI / ヘテロ構造 / 結晶性 / キャリア濃度 / 窒素ラジカル / オーミックコンタクト / インターミキシング / ヘテロ界面 / エピタキシャル成長 / 無極性 / 多重量子井戸 / 光反射率 / ラジカルビーム / RHEED / その場観察 / 分子線エビタキシー法 / Seebeck係数 / サーモパワー / ナノ構造 Less

赤色発光素子応用に資するInGaNマトリクスの構造制御Principal Investigator
- Principal Investigator
  
  山口智広
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Kogakuin University
Control of heterointerface region in the heteroepitaxial growth of In-based nitride semiconductorsPrincipal Investigator
- Principal Investigator
  
  Yamaguchi Tomohiro
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Kogakuin University
Development of free-standing nitride substrates using graphene
- Principal Investigator
  
  SASAKI TAKUO
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institutes for Quantum Science and Technology
Innovation of Three Primary Colors Emitting Devices by Nanocolumn Crystals
- Principal Investigator
  
  KISHINO Katsumi
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Sophia University
Bottom up creation of singularities by utilization of equilibrium and non-equilibrium crystal growth from vapor phase
- Principal Investigator
  
  Kumagai Yoshinao
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Dislocation passivation in InGaN by intentinally using immiscible nature during MBE growth by DERI method
- Principal Investigator
  
  NANISHI YASUSHI
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Ritsumeikan University
Fabrication processes of GaN-based integrated surface-emitting devices using a chemical liftoff techniques
- Principal Investigator
  
  Honda Tohru
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kogakuin University
Development of fundamental crystal growth technology of In-based nitride alloy semiconductorsPrincipal Investigator
- Principal Investigator
  
  Yamaguchi Tomohiro
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Kogakuin University
Pioneering development of fundamental technologies for fabrication of wide bandgap III-group oxide/nitride heterostructures
- Principal Investigator
  
  Higashiwaki Masataka
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Information and Communications Technology
Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University
Development of MBE growth technology of InN-based alloys using quasi-LPE methodPrincipal Investigator
- Principal Investigator
  
  YAMAGUCHI Tomohiro
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kogakuin University
  Ritsumeikan University
RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Ritsumeikan University
Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University

[Book] Chapter 1-Molecular-beam epitaxy of InN, Editors : T. D. Veal, C. F. McConville, and W. J. Schaff, CRC Press/Taylor and Francis(in press)2009
- Author(s)
  Y. Nanishi, T. Araki and T. Yamaguchi
- Publisher
  Indium Nitride and Related Alloys
- Data Source
  KAKENHI-PROJECT-18206003
[Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys2009
- Author(s)
  Y. Nanishi, T. Araki and T. Yamaguchi (Editors: T. D. Veal, C. F. McConville, and W. J. Schaff)
- Data Source
  KAKENHI-PLANNED-18069012
[Book] Chapter : 1-Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors : T.D.Veal, C.F.McConville, and W.J.Schaff)2009
- Author(s)
  Y.Nanishi, T.Araki, T.Yamaguchi
- Total Pages
  50
- Publisher
  CRC
- Data Source
  KAKENHI-PLANNED-18069012
[Book] "Indium Nitride and Related Alloys" Chapter I Molecular-Beam Epitaxy of InN(edited by T.D.Veal, C.F.McConville, and W.J.Schaff)2009
- Author(s)
  Y.Nanishi, T.Araki, T.Yamaguchi
- Publisher
  CRC
- Data Source
  KAKENHI-PLANNED-18069012
[Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors: T. D. Veal, C. F. McConville, and W. J. Schaff)2009
- Author(s)
  Y. Nanishi, T. Arakiand T. Yamaguchi
- Publisher
  CRC
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Photoelectron spectroscopic study on electronic state of corundum In2O3 epitaxial thin film grown by mist-CVD2020
- Author(s)
  T. Nagata, T. Yamaguchi, S. Ueda, W. Yi, J. Chen, T. Kobayashi, H. Yokoo, T. Honda, Y. Yamashita, and T. Chikyow
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SI Pages: SIIG12-SIIG12
- DOI
  10.35848/1347-4065/ab84b2
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06417
[Journal Article] Impact of hydrochloric acid on the epitaxial growth of In2O3 films on (0001)α-Al2O3 substrates by mist CVD2020
- Author(s)
  T. Yamaguchi, S. Takahashi, T. Kiguchi, A. Sekiguchi, K. Kaneko, S. Fujita, H. Nagai, M. Sato, T. Onuma, and T. Honda
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 7 Pages: 0755041-4
- DOI
  10.35848/1882-0786/ab9a90
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PUBLICLY-19H04531
[Journal Article] Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001) α-Al2O3 substrates2020
- Author(s)
  T. Yamaguchi, H. Nagai, T. Kiguchi, N. Wakabayashi, T. Igawa, T. Hitora, T. Onuma, T. Honda, and M. Sato
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 7 Pages: 0755051-5
- DOI
  10.35848/1882-0786/ab9a8f
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PUBLICLY-19H04531
[Journal Article] In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN2019
- Author(s)
  Yamaguchi Tomohiro、Sasaki Takuo、Fujikawa Seiji、Takahasi Masamitu、Araki Tsutomu、Onuma Takeyoshi、Honda Tohru、Nanishi Yasushi
- Journal Title
  
  Crystals
  
  Volume: 9 Issue: 12 Pages: 631-631
- DOI
  10.3390/cryst9120631
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K05298, KAKENHI-PROJECT-19H00874, KAKENHI-PROJECT-17H02778
[Journal Article] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2017
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 121 Issue: 9 Pages: 095703-095703
- DOI
  10.1063/1.4977201
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419
[Journal Article] Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in beta-Ga2O3 single crystals2016
- Author(s)
  T.Onuma, S.Saito, K.Sasaki, K.Goto, T.Masui, T.Yamaguchi, T.Honda, A.Kuramata, and M.Higashiwaki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 108 Issue: 10 Pages: 1019041-5
- DOI
  10.1063/1.4943175
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25390071, KAKENHI-PROJECT-25420341, KAKENHI-PROJECT-25289093
[Journal Article] Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED2016
- Author(s)
  D. Taka, T. Onuma, T. Shibukawa, H. Nagai, T. Yamaguchi, J.-S. Jang, M. Sato, and T.Honda
- Journal Title
  
  Physica Status Solidi (a)
  
  Volume: 214 Issue: 3 Pages: 16005981-5
- DOI
  10.1002/pssa.201600598
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Journal Article] Spectroscopic ellipsometry studies on β-Ga2O3 films and single crystal2016
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, and M. Higashiwaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202B2-1202B2
- DOI
  10.7567/jjap.55.1202b2
- NAID
  210000147262
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289093
[Journal Article] Optical properties of Ga0.82In0.18N p-n homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy2015
- Author(s)
 T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya and T. Honda
- Journal Title
 
 Transactions of the Materials Research Society of Japan
 
 Volume: 40 Issue: 2 Pages: 149-152
- DOI
 10.14723/tmrsj.40.149
- NAID
 130005089534
- ISSN
 1382-3469, 2188-1650
- Language
 Japanese
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-15H03559
[Journal Article] Valence band ordering in beta-Ga2O3 studied by polarized transmittance and reflectance spectroscopy2015
- Author(s)
  T.Onuma, S.Saito, K.Sasaki, T.Masui, T.Yamaguchi, T.Honda, and M.Higashiwaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 11 Pages: 1126011-5
- DOI
  10.7567/jjap.54.112601
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25390071, KAKENHI-PROJECT-25420341, KAKENHI-PROJECT-25289093
[Journal Article] InN NanoColumns Grown by Molecular Beam Epitaxy and Their Luminescence Properties2015
- Author(s)
  K. Wang, T. Araki, T. Yamaguchi, Y.T. Chen, E. Yoon, Y. Nanishi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 430 Pages: 93-97
- DOI
  10.1016/j.jcrysgro.2015.07.027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-15H03559
[Journal Article] Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal2015
- Author(s)
  R. Cusco, N. Domenech-Amador, T. Hatakeyama, T. Yamaguchi, T. Honda and L. Artus
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 117 Issue: 18 Pages: 185706-185706
- DOI
  10.1063/1.4921060
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Journal Article] Impacts of AlOx formation on emission properties of AlN/GaN heterostructures2015
- Author(s)
  Takeyoshi Onuma, Yohei Sugiura, Tomohiro Yamaguchi, Tohru Honda, and Masataka Higashiwaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 5 Pages: 0524011-3
- DOI
  10.7567/apex.8.052401
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289093, KAKENHI-PROJECT-25390071, KAKENHI-PROJECT-25420341
[Journal Article] Polarized Raman spectra in β-Ga2O3 single crystals2014
- Author(s)
  T. Onuma, S. Fujioka, T. Yamaguchi, Y. Itoh, M. Higashiwaki, K. Sasaki, T. Masui, and T. Honda
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in press Pages: 330-333
- DOI
  10.1016/j.jcrysgro.2013.12.061
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289093, KAKENHI-PROJECT-25390071
[Journal Article] Cathodoluminescence spectra of Ga-In-O Polycrystalline films fabricated by molecular precursor method2014
- Author(s)
  尾沼猛儀、山口智広、本田徹他10名
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 5S1 Pages: 05FF02-05FF02
- DOI
  10.7567/jjap.53.05ff02
- NAID
  210000143831
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25390071, KAKENHI-PROJECT-25420341
[Journal Article] Effect of (GaN/AlN) alternating-source-feeding buffer layer in GaN growth on Al2O3 and silicon by RF-MBE2013
- Author(s)
  T. Yamaguchi, D. Tajimi, M. Hayashi, T. Igaki, Y. Sugiura and T. Honda
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 11 Issue: 11 Pages: 1549-1552
- DOI
  10.1002/pssc.201300399
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420341, KAKENHI-PROJECT-25706020
[Journal Article] Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation2013
- Author(s)
  T. Yamaguchi, N. Uematsu, T. Araki, T. Honda, E. Yoon and Y. Nanishi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 377 Pages: 123-126
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420341
[Journal Article] Electron-beam incident-angle-resolved cathodoluminescence studies on bulk ZnO crystals2013
- Author(s)
  T. Onuma, T. Yamaguchi and T. Honda
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 869-872
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420341
[Journal Article] Fabrication of red, green and blue pixels using integrated GaN-based Schottky-type light-emitting diodes2013
- Author(s)
  T Honda, T. Yamaguchi, N. Sakai, S. Fujioka and Y. Sugiura
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JH12-08JH12
- DOI
  10.7567/jjap.52.08jh12
- NAID
  210000142705
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420341
[Journal Article] Application of DERI Method to InN/InGaN MQW, Thick InGaN and InGaN/InGaN MQW Structure Growth2013
- Author(s)
  T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi
- Journal Title
  
  Proceedings of SPIE "Gallium Nitride Materials and Devices VIII
  
  Volume: 8625巻 Pages: 862502-862502
- DOI
  10.1117/12.2007258
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Investigation of the Near-Surface Structures of Polar InN Films by Chemicalstate-Discriminated Hard X-Ray Photoelectron Diffraction2013
- Author(s)
  A. L. Yang, Y. Yamashita, M. Kobata, T. Matsushita, H. Yoshikawa, I. Pis, M. Imura, T. Yamaguchi, O. Sakata, Y. Nanishi, and K. Kobayashi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals2013
- Author(s)
  T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Masui, and T. Honda
- Journal Title
  
  Applied Physcs Letters
  
  Volume: 103 Issue: 4 Pages: 0419101-3
- DOI
  10.1063/1.4816759
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289093, KAKENHI-PROJECT-25390071
[Journal Article] Fabrication of Nano-structure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE2012
- Author(s)
  T. Araki, S. Yamashita, T. Yamaguchi, E. Yoon, and Y. Nanishi
- Journal Title
  
  physica status solidi (a)
  
  Volume: 209巻 Issue: 3 Pages: 447-450
- DOI
  10.1002/pssa.201100520
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films2012
- Author(s)
  A.Yang, Y.Yamashita, T.Yamaguchi, M.Imura, M.Kaneko, O.Sakata, Y.Nanishi, K.Kobayashi
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 3 Pages: 031002-031002
- DOI
  10.1143/apex.5.031002
- NAID
  10030510922
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004, KAKENHI-PROJECT-23560033
[Journal Article] Surface Acoustic Waves and Elastic Constants of InN Epilayers Determined by Brillouin Scattering2012
- Author(s)
  R. J. Jimenez, R. Cusco, N. Domenech-Amador, C. Prieto, T. Yamaguchi, Y. Nanishi, L. Artus
- Journal Title
  
  physica status solidi (RRL) - Rapid Research Letters
  
  Volume: 6 Pages: 256-258
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] MBE法による配列制御InNナノコラム成長2012
- Author(s)
  荒木努、山口智広、名西〓之
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 38 Pages: 47-53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Double Resonance Raman Effects in InN Nanowires2012
- Author(s)
  N. Domenech-Amador, R. Cusco, R. Calarco, T. Yamaguchi, Y. Nanishi and L. Artus
- Journal Title
  
  physica status solidi (RRL) - Rapid Research Letters
  
  Volume: 6 Pages: 160-162
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Temperature dependence of Mg-H local vibrational modes in heavily doped InN:Mg2012
- Author(s)
  R. Cusco, N. Dome`nech-Amador, L. Artus, K. Wang, T. Yamaguchi, and Y. Nanishi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys. 50巻
- NAID
  210000138257
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Mg doped InN and confirmation of free holes in InN2011
- Author(s)
  K.Wang, N.Millar, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.AgerIII
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Proceedings of SPIE photonic West 2011
  
  Volume: 7939 Pages: 793904-793904
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiationto InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
- Author(s)
  T.Yamaguchi, H.Umeda, T.Ataki, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Plays.
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Application of Droplet Elimination Process by Radical -Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
- Author(s)
  T. Yamaguchi, H. Umeda, T. Araki, and Y. Nanishi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50巻 Issue: 4S Pages: 04DH08-04DH08
- DOI
  10.1143/jjap.50.04dh08
- NAID
  210000070345
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004, KAKENHI-PROJECT-21760237
[Journal Article] Investigation on InN Mole Fraction Fluctuation in InGaN Films Grown by RF-MBE2011
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(c)
  
  Volume: 8 Issue: 5 Pages: 1499-1502
- DOI
  10.1002/pssc.201001203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09F09272, KAKENHI-PROJECT-21246004, KAKENHI-PROJECT-21760237
[Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
- Author(s)
  T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000070345
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2011
- Author(s)
  K. Wang, T. Yamaguchi, T. Araki, E. Yoon, Y. Nanishi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50巻 Issue: 1S1 Pages: 01AE02-01AE02
- DOI
  10.1143/jjap.50.01ae02
- NAID
  210000138257
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Application of Droplet Elimination Process by Radical -Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
- Author(s)
  T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys. 50巻
- NAID
  210000070345
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
- Author(s)
  K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] High-Pressure Raman Scattering in Wurtzite Indium Nitride2011
- Author(s)
  J.Iba～nez, F.J.Manjon, A.Segura, R.Oliva, R.Cusco, R.Vilaplana, T.Yamaguchi, Y.Nanishi, L.Artus
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 99 Issue: 1
- DOI
  10.1063/1.3609327
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Proceedings of SPIE photonic West 2011
  
  Volume: 7939 Pages: 793904-793904
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2011
- Author(s)
  T. Kimura, E. Fukumoto, T. Yamaguchi, K. Wang, M. Kaneko, T. Araki, E. Yoon and Y. Nanishi
- Journal Title
  
  Physica status solidi(c)
  
  Volume: Vol.8 Pages: 1499-1502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
- Author(s)
  K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. M. Yu, E. E. Haller, W. Walukiewicz, J. W. Ager III
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 98巻 Issue: 4
- DOI
  10.1063/1.3543625
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Raman Scattering Study of Anharmonic Phonon Decay in InN2011
- Author(s)
  R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Phys.Rev.B.
  
  Volume: 83 Issue: 24
- DOI
  10.1103/physrevb.83.245203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50
- NAID
  210000138257
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Unintentional Incorporation of Hydrogen in Wurtzite InN with Different Surface Orientations2011
- Author(s)
  V.Darakchieva, K.Lorenz, M.-Y.Xie, E.Alves, C.L.Hsiao, L.C.Chen, L.W.Tu, W.J.Schaff, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 110 Issue: 6
- DOI
  10.1063/1.3642969
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
- Author(s)
  K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
- Journal Title
  
  Appl.Phys.Lett. 98巻
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] PN junction rectification in electrolyte gated Mg-doped InN2011
- Author(s)
  E.Alarcon-Llado, M.A.Mayer, B.W.Boudouris, R.A.Segalman, N.Miller, T.Yamaguchi, K.Wang, Y.Nanishi, E.E.Haller, J.W.Ager
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 99 Issue: 10
- DOI
  10.1063/1.3634049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09F09272, KAKENHI-PROJECT-21246004
[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
- Author(s)
  K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] MBE法による配列制御InNナノコラム成長2011
- Author(s)
  荒木努、山口智広、名西〓之
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 38 Pages: 47-53
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T. Yamaguchi, T. Arakiand Y. Nanishi
- Journal Title
  
  Proceedings of SPIE photonic West 2011
  
  Volume: 7939巻 Pages: 793904-793904
- DOI
  10.1117/12.874840
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Application of droplet elimination process by radical-beam irradiation to InGaN growth and fabrication of InN/InGaN periodic structure2011
- Author(s)
  T. Yamaguchi, H. Umeda, T. Araki, and Y. Nanishi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50
- NAID
  210000070345
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure2010
- Author(s)
  J.Ibanez, A.Segura, F.J.Manjon, L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 96
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Structural Anisotropy of Nonpolar and Semipolar InN Epitaxial Layers2010
- Author(s)
  V.Darakchieva, M.-Y.Xie, N.Franco, F.Giuliani, B.Nunes, E.Alves, C.L.Hsiao, L.C.Chen, T.Yamaguchi, Y.Takagi, K.Kawashima, Y.Nanishi
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a) (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a)
  
  Volume: 207 Pages: 1356-1360
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2010
- Author(s)
  T. Yamaguchiand Y. Nanishi
- Journal Title
  
  phys. stat.sol. (a)
  
  Volume: 207巻 Issue: 1 Pages: 19-23
- DOI
  10.1002/pssa.200982638
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004, KAKENHI-PROJECT-21760237
[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000138257
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Hydrogen in InN : a Ubiquitous Phenomenon in Molecular Beam Epitaxy Grown Material2010
- Author(s)
  V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, B.Monemar, M.Schubert, N.Franco, C.L Hsiao, L.C.Chen, J.Schaff, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2010
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a) 207巻
  
  Pages: 19-23
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Structural Anisotropy of Nonpolar and Semipolar InN Epitaxial Layers2010
- Author(s)
  V.Darakchieva, M.-Y.Xie, N.Franco, F.Giuliani, B.Nunes, E.Alues, C.L.Hsiao, L.C.Chen, T.Yamaguchi, Y.Takagi, K.Kawashima, Y.Nanishi
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Arakiand Y. Nanishi
- Journal Title
  
  phys. stat. sol. (a)
  
  Volume: 207巻 Issue: 6 Pages: 1356-1360
- DOI
  10.1002/pssa.200983657
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure2010
- Author(s)
  J.Ibanez, A.Segura, F.J.Manjon, L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Hydrogen in InN : a Ubiquitous Phenomenon in Molecular Beam Epitaxy Grown Material2010
- Author(s)
  V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, B.Monemar, M.Schubert, N.Franco, C.L Hsiao, L.C.Chen, J.Schaff, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
- Author(s)
  T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010)
  
  Pages: 92-95
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a)
  
  Volume: 207 Pages: 1356-1360
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
- Author(s)
  T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
  
  Pages: 92-95
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] RF-MBE growth of InN/InGaN MQW Structures by DERI and their characterization2010
- Author(s)
  T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials
  
  Pages: 92-95
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a) (印刷中(掲載決定))
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000138257
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Indium droplet elimination by radical beam irradiation for reproducible and high-quality growth of InN by RF molecular beam epitaxy2009
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.2
- NAID
  10025085943
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Journal Title
  
  SPIE Photonics West 2009 Proceedings 7216
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate, phys2009
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  stat. sol (c)6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy2009
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025085943
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE, J2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, and Y. Nanishi
- Journal Title
  
  Cryst. Growth 311
  
  Pages: 2780-2782
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO2 Substrate by RF-MBE2009
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth and Characterization of N-Polar and In-Polar InN Films by RF-MBE2009
- Author(s)
  T.Yamaguchi, D.Muto, T.Araki, Y.Nanishi
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2780-2782
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Photoexcited Carriers and Surface Recombination Velocity in InN Epilayers : A Raman Scattering Study2009
- Author(s)
  R.Cusco, J.Ibanez, E.Alarcon L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Phys.Rev.B. 80
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO2 Substrate by RF-MBE2009
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Indium droplet elimination by radical beam irradiation for reproducible and highquality growth of InN by RF molecular beam epitaxy2009
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Journal Title
  
  Appl. Phys. Express 2
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth and Characterization of N-Polar and In-Polar InN Films by RF-MBE2009
- Author(s)
  山口智広, 武藤大祐, 荒木努, 名西〓之
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2780-2782
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of M-plane(10-10) InN on LiAlO_2 (100) Substrate2009
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Journal Title
  
  Proc. of SPIE 7216 72160N
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] RF-MBE法によるr面(10-12)Sapphire基板上、半極性面InNの結晶成長2009
- Author(s)
  中谷佳津彦、川島圭介、山口智広、武藤大祐、荒木努、名西〓之
- Journal Title
  
  電気学会論文誌C 電子・情報・システム部門誌 129
  
  Pages: 1974-1977
- NAID
  10025533035
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Journal Title
  
  SPIE Photonics West 2009 Proceedings 7216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Photoexcited Carriers and Surface Recombination Velocity in InN Epilayers : A Raman Scattering Study2009
- Author(s)
  R.Cusco, J.Ibanez, E.Alarcon L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Phys.Rev.B. 80
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy2009
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Applied Physics Express 2巻
- NAID
  10025085943
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Novel InN growth method under In-rich condition on GaN/Al_2O_3 (0001) templates, phys2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
- Journal Title
  
  stat. sol (c)6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Journal Title
  
  SPIE Photonics West 2009 Proceedings 7216 72160N
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, and Y. Nanishi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol.311 Pages: 2780-2782
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2009
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a) 207
  
  Pages: 19-23
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Indium droplet elimination by radical beam irradiation for reproducible and high-quality growth of InN by RF molecular beam epitaxy2009
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Journal Title
  
  Applied Physics Express 2 051001
  
  Pages: 1-3
- NAID
  10025085943
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article]2009
- Author(s)
  Y.Nanishi, T.Araki, T.Yamaguchi
- Journal Title
  
  "Indium Nitride and Related Alloys" Chapter 1 Molecular-Beam Epitaxy of InN( edited by T.D.Veal, C.F.McConville, and W.J.Schaff)(CRC)
  
  Pages: 1-50
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] RF-MBE法によるr面(10-12)Sapphire 基板上、半極性面InNの結晶成長2009
- Author(s)
  中谷佳津彦、川島圭介、山口智広、武藤大祐、荒木努、名西〓之
- Journal Title
  
  電気学会論文誌C電子・情報・システム部門誌 129
  
  Pages: 1974-1977
- NAID
  10025533035
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Novel InN growth method under In-rich condition on GaN/Al_2O_3(0001) templates2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2009
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a) 207
  
  Pages: 19-23
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
- Journal Title
  
  J. Cryst. Growth (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T.Araki, D.Fukuoka, H.Tamiya, S.Harui, T.Yamaguchi, H.Miyake, K.Hiramatsu, Y.Nanishi
- Journal Title
  
  SPIE Photonics West 2009 Proceedings 7216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T.Araki, D.Fukuoka, H.Tamiya, S.Harui, T.Yamaguchi, H.Miyake, K.Hiramatsu, Y.Nanishi
- Journal Title
  
  SPIE Photonics West 2009 Proceedings 7216
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Raman-Scattering Study of the Long-Wavelength Longitudinal-Optical-Phonon-Plasmon Coupled Modes in High-Mobility InN Layers2009
- Author(s)
  R.Cusco, J.Ibanez, E.Alarcon L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Phys.Rev.B 79
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2009
- Author(s)
  山口智広, 名西〓之
- Journal Title
  
  phys.stat.sol.(a) 207
  
  Pages: 19-23
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE, phys2009
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  stat. sol (c)6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Raman-Scattering Study of the Long-Wavelength Longitudinal-Optical-Phonon-Plasmon Coupled Modes in High-Mobility InN Layers2009
- Author(s)
  R.Cusco, J.Ibanez, E.Alarcon L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Phys.Rev.B 79
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth and Characterization of N-Polar and In-Polar InN Films by RF-MBE2009
- Author(s)
  T.Yamaguchi, D.Muto, T.Araki, Y.Nanishi
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2780-2782
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, Y. Nanishi
- Journal Title
  
  J. Cryst. Growth (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate2009
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy2009
- Author(s)
  山口智広, 名西〓之
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025085943
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy2009
- Author(s)
  T. Yamaguchiand Y. Nanishi
- Journal Title
  
  Applied Physics Express
  
  Volume: 2巻 Pages: 051001-051001
- DOI
  10.1143/apex.2.051001
- NAID
  10025085943
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246004
[Journal Article] Appl. Phys2009
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Journal Title
  
  Express 2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy2009
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025085943
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760237
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
- Author(s)
  T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
- Journal Title
  
  Mater. Res. Soc. Symp. Proc. 955
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
- Author(s)
  T.Yamaguchi, T.Araki, H.Naoi, Y.Nanishi
- Journal Title
  
  Material Research Society Symposium Proceedings 955
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE, Mater. Res2007
- Author(s)
  T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
- Journal Title
  
  Soc. Symp. Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
- Author(s)
  T.Yamaguchi, H.Naoi, T.Araki, and Y.Nanishi
- Journal Title
  
  Mater.Res.Soc.Sump.Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Patent] 窒化物半導体薄膜の製造方法2009
- Inventor(s)
  山口智広, 名西〓之
- Industrial Property Rights Holder
  学校法人立命館
- Filing Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069012
[Patent] 窒化物半導体薄膜の製造方法2009
- Inventor(s)
  山口智広, 名西やす之
- Industrial Property Rights Holder
  学校法人立命館
- Filing Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-21246004
[Patent] 窒化物半導体薄膜の製造方法2009
- Inventor(s)
  山口智広, 名西やす之
- Industrial Property Rights Holder
  学校法人立命館
- Filing Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069012
[Patent] 窒化物半導体薄膜の製造方法2009
- Inventor(s)
  山口智広,名西〓之
- Industrial Property Rights Holder
  学校法人立命館
- Industrial Property Number
  2009-119315
- Filing Date
  2009-05-15
- Overseas
- Data Source
  KAKENHI-PROJECT-21246004
[Patent] 窒化物半導体薄膜の製造方法2009
- Inventor(s)
  山口智広, 名西〓之
- Industrial Property Rights Holder
  学校法人立命館
- Filing Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-21760237
[Patent] 窒化物半導体薄膜の製造方法2009
- Inventor(s)
  山口智広,名西.之
- Industrial Property Rights Holder
  学校法人立命館
- Filing Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] 窒素RFパワー変化によるナノコラム結晶のGaInNバッファ層形状均一化の検討2023
- Author(s)
  赤川広海、山田純平、山口智広、富樫理恵、尾沼猛儀、野村一郎、本田徹、岸野克巳
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] その場XRD-RSMを用いたGaN上GaInN Buffer層挿入GaInN RF-MBE成長における格子緩和過程観察2023
- Author(s)
  竹内丈、佐々木拓生、横山晴香、尾沼猛儀、本田徹、山口智広、名西やすし
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] RF-MBEによる多層膜緩衝層を用いた低転位密度GaInNの製作2022
- Author(s)
  板橋大樹、山口智広、尾沼猛儀、本田徹
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] RF-MBE成長赤色発光MQWにおけるGaInN下地層挿入の効果2022
- Author(s)
  山口智広、山田純平、富樫理恵、田原開悟、赤川広海、佐々木拓生、村上尚、尾沼猛儀、本田徹、名西やすし、岸野克巳
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] 赤色発光MQWｓを有するＩｎＧａＮ系ナノコラムにおけるＡｌＧａＮ小壁装のＡｌ組成非依存性2022
- Author(s)
  山田順平、本田達也、水野愛、富樫理恵、野村一郎、山口智広、本田徹、岸野克巳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] TEM evaluation of in-situ nitrogen plasma irradiated GaInN2022
- Author(s)
  A. Tokushige, S. Ohno, Y. Hayakawa, T. Honda, T. Onuma, T. Yamaguchi
- Organizer
  The 21st International Symposium on Advanced Technology (ISAT-21)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] THVPE法におけるInGaN薄膜成長の膜厚制御性とヘテロ構造の検討2022
- Author(s)
  小林伊織、江間研太郎、山田千帆、山口智広、村上尚
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] その場XRD-RSM を用いたRF-MBE GaInNヘテロエピタキシャル成長における緩和過程観察2022
- Author(s)
  竹内丈、佐々木拓生、藤川誠司、横山晴香、尾沼猛儀、本田徹、山口智広、名西やすし
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Structural analysis in epitaxial growth of GaInN by RF-MBE using XRD-RSM2022
- Author(s)
  J. Takeuchi, T. Sasaki, H. Yokoyama, T. Onuma, T. Honda, T. Yamaguchi
- Organizer
  The 21st International Symposium on Advanced Technology (ISAT-21)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] RF-MBEによるInN緩衝層を用いたGaInNの格子緩和制御2022
- Author(s)
  板橋大樹、吉田涼介、山口智広、尾沼猛儀、本田徹
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Impact of Ga1-xInxN underlayer for growth of Ga1-yInyN/Ga1-xInxN MQW structure2022
- Author(s)
  T. Yamaguchi, K. Tahara, J. Yamada, T. Sasaki, H. Yokoyama, T. Onuma, T. Honda, Y. Nanishi, and K. Kishino
- Organizer
  The 9th Advanced Functional Materials & Devices (AFMD) and The 4th Symposium for Collaborative Research on Energy Science and Technology (SCREST)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] 赤色ナノコラム成長におけるGaInNバッファ層のⅤ/Ⅲ族比依存性2022
- Author(s)
  赤川広海、山田純平、山口智広、富樫理恵、尾沼猛儀、野村一郎、本田徹、岸野克巳
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Impact of Ga1-xInxN underlayer for growth of Ga1-yInyN/Ga1-xInxN MQW structure2022
- Author(s)
  T. Yamaguchi, K. Tahara, J. Yamada, T. Sasaki, H. Yokoyama, T. Onuma, T. Honda, Y. Nanishi, and K. Kishino
- Organizer
  The 9th Advanced Functional Materials & Devices (AFMD) & The 4th Symposium for Collaborative Research on Energy Science and Technology (SCREST)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] RF-MBEによる格子緩和制御層上高In組成GaInN MQWの成長と評価2021
- Author(s)
  松田真樹、山口智広、尾沼猛儀、本田徹
- Organizer
  第4回結晶工学ⅹISYSE 合同研究会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] 酸化物半導体結晶Ga2O3およびIn2O3の準安定相発現機構の検討2021
- Author(s)
  熊谷義直，後藤健，富樫理恵，山口智広，村上尚
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Study on DERI growth of InGaN/InN heterostructures using in situ XRD RSM measurements2021
- Author(s)
  T. Araki, N. Goto, H. Tachibana, A. Fukuda, S. Kayamoto, R. Nakamura, K. Matsushima, R. Moriya, S. Yabuta, S. Mouri, T. Sasaki, M. Takahashi, T. Yamaguchi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] 緩和制御層上GaInN周期構造のRF-MBE成長と評価2021
- Author(s)
  松田真樹、吉田涼介、田原開悟、山口智広、尾沼猛儀、本田徹
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] GaN系ナノコラムにおけるn-GaN平坦層がInGaN/AlGaN MQWs発光層に与える影響2021
- Author(s)
  山田純平、本田達也、吉田圭吾、富樫理恵、野村一郎、山口智広、本田徹、岸野克巳
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Growth of GaInN multi quantum well on strain-controlled layer by RF-MBE toward realization of light emitting diodes operating in red spectral region2021
- Author(s)
  M. Matsuda, R. Yoshida, K. Tahara, T. Yamaguchi, T. Onuma, and T. Honda
- Organizer
  The 20th International Symposium on Advanced Technology (ISAT-20)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] In situ XRD RSM measurements in MBE growth of GaInN film with low-temperature GaInN buffer layer2021
- Author(s)
  Tomohiro Yamaguchi, Takuo Sasaki, Takanori Kiguchi, Soichiro Ohno, Hiroki Hirukawa, Ryosuke Yoshida, Takeyoshi Onuma, Tohru Honda, Masamitu Takahasi, Tsutomu Araki, Yasushi Nanishi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] GaN上GaInN膜成長初期のSi層挿入数に対する格子緩和過程の変化2021
- Author(s)
  横山晴香、山口智広、佐々木拓生、大野颯一朗、木口賢紀、比留川大輝、藤川誠司、高橋正光、尾沼猛儀、本田徹
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] (0001)および（10-11）面InGaN/GaNナノコラム上InGaN/AlGaN MQWsの発光特性2021
- Author(s)
  山田純平、本田達也、水野愛、富樫理恵、野村一郎、山口智広、本田徹、岸野克巳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] 赤色発光LEDの製作に向けた RF-MBEによる緩和制御層上GaInN周期構造の成長と評価2021
- Author(s)
  松田真樹、吉田涼介、田原開悟、山口智広、尾沼猛儀、本田徹
- Organizer
  第13回大学コンソーシアム八王子学生発表会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Well width dependence on residual strain in high In composition GaInN/GaInN MQW by RF-MBE2021
- Author(s)
  K. Tahara, J. Yamada, T. Yamaguchi, Y. Nanishi, T. Onuma, T. Honda, and K. Kishino
- Organizer
  The 20th International Symposium on Advanced Technology (ISAT-20)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Growth of stable and/or metastable phases of Ga2O3 and In2O3 by halide vapor phase epitaxy and mist chemical vapor deposition2021
- Author(s)
  Yoshinao Kumagai, Ken Goto, Rie Togashi, Tomohiro Yamaguchi, Hisashi Murakami
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] In situ XRD RSM measurements in MBE growth of GaInN film with low-temperature GaInN buffer layer2021
- Author(s)
  T. Yamaguchi, T. Sasaki, T. Kiguchi, S. Ohno, H. Hirukawa, R. Yoshida, T. Onuma, T. Honda, M. Takahasi, T. Araki, Y. Nanishi
- Organizer
  8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] GaN上GaInN膜成長初期のSi層挿入数に対する格子緩和過程の変化2021
- Author(s)
  横山晴香、山口智広、佐々木拓生、大野颯一朗、木口賢紀、比留川大輝、藤川誠司、高橋正光、尾沼猛儀、本田徹
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] RF-MBE 法によるGaInN/GaInN 多重量子井戸成長と評価2021
- Author(s)
  田原開悟、山田純平、山口智広、名西やすし、尾沼猛儀、本田徹、岸野克巳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] RF-MBE法によるGaInN/GaInN多重量子井戸成長と評価2021
- Author(s)
  田原開悟、山田純平、山口智広、名西やすし、尾沼猛儀、本田徹、岸野克巳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Epitaxial mist chemical vapor deposition growth and characterization of α-In2O3 films on α-Al2O3 substrates2021
- Author(s)
  Tomohiro Yamaguchi, Takahiro Nagata, Subaru Takahashi, Takanori Kiguchi, Atsushi Sekiguchi, Takeyoshi Onuma, Tohru Honda, Ken Goto, Yoshinao Kumagai, Kentaro Kaneko, Shizuo Fujita
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Impact on InN buffer layer inserted into GaInN/GaN interfaces by RF-MBE2021
- Author(s)
  D. Itabashi, R. Yoshida, T. Yamaguchi, T. Onuma, and T. Honda
- Organizer
  The 20th International Symposium on Advanced Technology (ISAT-20)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] In situ XRD RSM measurements in MBE growth of GaInN film with low-temperature GaInN buffer layer2021
- Author(s)
  T. Yamaguchi, T. Sasaki, T. Kiguchi, S. Ohno, H. Hirukawa, R. Yoshida, T. Onuma, T. Honda, M. Takahasi, T. Araki, Y. Nanishi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] ハニカム配列GaInN/GaN ナノコラムLED の製作プロセス2021
- Author(s)
  上野彰大、今村暁、山田純平、本田達也、大音隆男、山口智広、冨樫理恵、野村一郎、本田徹、岸野克巳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Fabrication process of GaInN/GaN honeycomb array nanocolumn LEDs for integration of surface plasmonic resonance scheme2020
- Author(s)
  Akihiro Ueno, Gyo Imamura, Keigo Yoshida, Keiji Takimoto, Ichirou Nomura, Rie Togashi, Tomohiro Yamaguchi, Tohru Honda, Katsumi Kishino
- Organizer
  8th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] RF-MBE growth and characterization of high-In-content GaInN/GaInN multiple layers2020
- Author(s)
  K. Tahara, R. Yoshida, H. Hirukawa, T. Yamaguchi, T. Onuma, T. Honda
- Organizer
  The 40th Electronic Materials Symposium (EMS40)
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] GaInN/GaN規則配列ナノコラム結晶における活性層の構造と光学特性の関係2020
- Author(s)
  吉田圭吾、滝本啓司、富樫理恵、野村一郎、山口智広、尾沼猛儀、本田徹、岸野克巳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Structural analyses of α-In2O3 grown on α-Al2O3 substrates by mist CVD2020
- Author(s)
  Y. Hayakawa, S. Ohno, T. Yamaguchi, T. Kiguchi, H. Yokoo, T. Onuma, T. Honda
- Organizer
  The 8th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] GaInN/GaN成長時の格子緩和に対するSiアンチサーファクタントの効果2020
- Author(s)
  横山晴香、山口智広、佐々木拓生、大野颯一朗、木口賢紀、比留川大輝、藤川誠司、高橋正光、尾沼猛儀、本田徹
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Comparison of Microstructures in α-Ga2O3 and α-In2O3 Films Grown on α-Al2O3 Substrates by Mist CVD2020
- Author(s)
  Y. Hayakawa, S. Ohno, T. Yamaguchi, T. Kiguchi, S. Takahashi, H. Yokoo, T. Onuma, T. Honda
- Organizer
  9th Electronic Materials Symposium (EMS-39)
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] GaInN/GaN成長時の格子緩和過程に対するSiアンチサーファクタント効果2020
- Author(s)
  横山晴香、山口智広、佐々木拓生、大野颯一朗、木口賢紀、比留川大輝、藤川誠司、高橋正光、尾沼猛儀、本田徹
- Organizer
  第81回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] RF-MBE成長した高In組成GaInN/ GaInN多重量子井戸における障壁層のIn組成と周期数が発光特性へ及ぼす影響2020
- Author(s)
  吉田涼介、比留川大輝、大野颯一朗、田原開悟、山口智広、尾沼猛儀、本田徹
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Power Supply Effective of Optical Wireless Power Transmission Systems Using Visible LEDs and Silicon Solar Cells2020
- Author(s)
  H. Yokoyama, T. Yamaguchi, T. Onuma, R. Yoshida, Y. Ushida, T. Honda
- Organizer
  The 2nd Optical Wireless and Fiber Power Transmission Conference (OWPT2020)
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] InGaN/GaN Honeycomb Lattice Nanocolumun LEDs2019
- Author(s)
  G. Imamura, K. Yoshida, A. Ueno, R. Togashi, T. Yamaguchi, T. Honda and K. Kishino
- Organizer
  2019 Materials Research Society (MRS) Fall Meeting & Exhibit (2019MRS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Red Emitting InGaN-based Ordered Nanocolumns Exhibiting Photonic Crystal Effects at 671 nm2019
- Author(s)
  K. Takimoto, K. Narita, K. Yoshida, T. Oto, T. Yamaguchi, T. Honda, T. Onuma, R. Togashi, I. Nomura and K. Kishino
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Optical characteristics of high In composition GaInN MQWs grown by RF-MBE2019
- Author(s)
  R. Yoshida, Y. Nakajima, H. Hirukawa, S. Ohno, T. Yamaguchi, T. Onuma, and T. Honda
- Organizer
  The 39th Electronic Materials Symposium (EMS-39)
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] 規則配列InGaNナノコラムを用いた赤色域発光結晶2019
- Author(s)
  滝本啓司、成田一貴、吉田圭吾、大音隆男、山口智広、本田徹、尾沼猛儀、富樫理恵、野村一郎、岸野克巳
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル分科会「第11回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] 低温GaN層挿入によるSi基板上GaNナノコラム構造への影響2019
- Author(s)
  細谷優人, 山口智広, 尾沼猛儀, 本田徹
- Organizer
  第２回結晶工学×ISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] Epitaxial relationship in Cu3N layer grown on c-plane sapphire substrate by mist CVD2019
- Author(s)
  N. Wakabayashi, M. Takahashi, T. Yamaguchi, H. Nagai, M. Sato, T. Onuma, T. Honda
- Organizer
  38th Electronic Materials Symposium (EMS-38)
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] RF-MBE 成長した高In 組成GaInN MQWs の光学特性2019
- Author(s)
  吉田涼介，中島裕亮，比留川大輝，大野颯一郎，山口智広，尾沼猛儀，本田徹
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] I nGaN/GaNハニカム構造ナノコラム結晶の成長と評価2019
- Author(s)
  吉田圭吾, 今村暁, 滝本啓司, 富樫理恵, 山口智広, 尾沼猛儀, 本田徹, 岸野克巳
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PROJECT-19H00874
[Presentation] ミストCVD法によるCu3Nエピタキシャル成長2019
- Author(s)
  若林那旺，高橋幹夫，山口智広，永井裕己，佐藤光史，尾沼猛儀，本田徹
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 深紫外光検出器のためのGa2O3薄膜のミストCVD成長2018
- Author(s)
  力武健一郎，山口智広, 尾沼猛儀, 本田徹
- Organizer
  第41回光通信研究会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Effect of α-(AlxGa1-x)2O3 Overgrowth on MSM-Type α-Ga2O3 Ultraviolet Photodetectors Grown by Mist CVD2018
- Author(s)
  K. Rikitake, T. Yamaguchi, T. Onuma, and T. Honda
- Organizer
  Pacific Rim Symposium on Surfaces, Coatings & Interfaces (Pacsurf2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Epitaxial Growth of Cu3N Films on (0001)Al2O3 Substrates by Mist Chemical Vapor Deposition2018
- Author(s)
  T. Yamaguchi, H. Itoh, M. Takahashi, H. Nagai, T. Onuma, T. Honda, and M. Sato
- Organizer
  The 17th International Symposium on Advanced Technology (ISAT-17)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Fabrication of double schottky type photodetector using corundum-structured gallium oxide2018
- Author(s)
  K. Rikitake, T. Yamaguchi, T. Onuma, and T. Honda
- Organizer
  37th Electronic Materials Symposium (EMS-37)
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Epitaxial Growth of Cu3N Films on (0001)Al2O3 Substrates by Mist Chemical Vapor Deposition2018
- Author(s)
  T. Yamaguchi, H. Itoh, M. Takahashi, H. Nagai, T. Onuma, T. Honda, and M. Sato
- Organizer
  2018 International Symposium on Novel and Sustainable Technology (2018 ISNST)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 単斜晶酸化ガリウム結晶における光学遷移過程2017
- Author(s)
  尾沼猛儀、齋藤伸吾、佐々木公平、後藤健、増井建和、山口智広、本田徹、倉又朗人、東脇正高
- Organizer
  第64回応用物理学会春季学術講演会シンポジウム「金属酸化物の結晶物性に迫る」
- Place of Presentation
  神奈川県横浜市横浜国際平和会議場（パシフィコ横浜）
- Year and Date
  2017-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] β-Ga2O3結晶における光学的異方性の解析2017
- Author(s)
  尾沼猛儀、山口智広、本田徹、佐々木公平、後藤健、増井建和、倉又朗人、齋藤伸吾、東脇正高
- Organizer
  日本学術振興会161委員会第98回研究会「ワイドギャップ酸化物半導体β-Ga2O3結晶成長、結晶評価、デバイス応用」
- Place of Presentation
  滋賀県長浜市長浜ロイヤルホテル
- Year and Date
  2017-01-12
- Invited
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Optical properties of Ga2O3 films and crystals2017
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, M. Higashiwaki
- Organizer
  Compound Semiconductor Week 2017 (CSW 2017)
- Place of Presentation
  dbb forum berlin, Berlin, Germany
- Year and Date
  2017-05-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Mist CVD growth of In2O3 films on (0001)alfa-Al2O3 substrates and (0001)GaN templates2016
- Author(s)
  T. Kobayashi, K. Tanuma, T. Yamaguchi, T. Onuma, T. Honda
- Organizer
  International Conference on Light-Emitting Devices and Thier Industrial Applications '16 (LEDIA '16)
- Place of Presentation
  Yokohama, Kanagawa, Japan
- Year and Date
  2016-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Observation of exciton-LO-phonon interaction in β-Ga2O3 single crystals2016
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, M. Higashiwaki
- Organizer
  German-Japanese Gallium Oxide Technology Meeting 2016
- Place of Presentation
  Leibniz Institute for Crystal Growth, Berlin, Germany
- Year and Date
  2016-09-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Beta-Ga2O3結晶における励起子-LOフォノン相互作用2016
- Author(s)
  尾沼猛儀、齋藤伸吾、佐々木公平、後藤健、増井建和、山口智広、本田徹、倉又朗人、東脇正高
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京都目黒区東京工業大学大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] (0001)α-Al2O3基板上および(0001)GaNテンプレート上へのIn2O3膜のミストCVD成長2016
- Author(s)
  小林拓也, 田沼圭亮, 山口智広, 尾沼猛儀, 本田徹
- Organizer
  2016年春季応用物理学会
- Place of Presentation
  東京工業大学, 東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Valence band structure of monoclinic gallium oxide studied by polarized optical measurements2016
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
- Organizer
  The Collaborative Conference on Crystal Growth 2015 (3CG 2015)
- Place of Presentation
  Hong Kong
- Year and Date
  2016-02-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Technical issues of GaInN growth with high indium composition for LEDs2016
- Author(s)
  T. Honda, T. Yamaguchi, and T. Onuma
- Organizer
  The Collaborative Conference on Crystal Growth 2015 (3CG 2015)
- Place of Presentation
  Hong Kong
- Year and Date
  2016-02-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Surface and Bulk Electronic Structures of Heavily Mg-Doped InN Epilayer by Hard X-Ray Photoelectron Spectroscopy2016
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Orlando, Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBE Growth of InGaN Ternary Alloys Using in-situ Monitoring Techniques2016
- Author(s)
  T. Yamaguchi, T. Sasaki, M. Takahasi, T. Araki, T. Onuma, T. Honda, Y. Nanishi
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM2016)
- Place of Presentation
  Tsukuba, Ibaraki, Japan
- Year and Date
  2016-09-26
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] In-Situ Monitoring in RF-MBE Growth of In-Based Nitrides2016
- Author(s)
  T. Yamaguchi, T. Sasaki, M. Takahashi, T. Araki, T. Onuma, T. Honda, Y. Nanishi
- Organizer
  15th International Symposium on Advanced Technology
- Place of Presentation
  Tainan City (Taiwan)
- Year and Date
  2016-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Anisotropic optical constants in β-Ga2O3 single crystal2016
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, M. Higashiwaki
- Organizer
  58th Electronic Materials Conference (EMC 2016)
- Place of Presentation
  University of Delaware, Newark, Delaware, USA
- Year and Date
  2016-06-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] 分子プレカーサー法を用いたIn-Ga-Mg-O薄膜製作検討2016
- Author(s)
  高橋勇貴, 後藤良介, 安野泰平, 尾沼猛儀, 永井裕己, 山口智広, 佐藤光史, 本田徹
- Organizer
  2016年春季応用物理学会
- Place of Presentation
  東京工業大学, 東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2016
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductor 2016 (IWN2016)
- Place of Presentation
  Orlando, Florida (USA)
- Year and Date
  2016-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Study on Mist CVD Growth of IN2O32016
- Author(s)
  T. Yamaguchi, T. Kobayashi, K. Tanuma, H. Nagai, T. Onuma, M. Sato, T. Honda
- Organizer
  2016 international Symposium on Novel and Sustainable Technology (2016ISNST)
- Place of Presentation
  Taiwan
- Year and Date
  2016-10-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth and characterization of In2O3 on various substrates by mist CVD2016
- Author(s)
  T. Kobayashi, K. Tanuma, T. Yamaguchi, T. Onuma, T. Honda
- Organizer
  2016 Materials Research Society Fall Meeting & Exhibit(2016 MRS Fall Meeting)
- Place of Presentation
  Boston, MA, USA
- Year and Date
  2016-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Strain Relaxation Analysis Using In-situ X-ray Reciprocal Space Mapping Measurements in RF-MBE Growth of GaInN2016
- Author(s)
  T. Yamaguchi, T. Sasaki, M. Takahashi, T. Onuma, T. Honda, Y. Nanishi
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市)
- Year and Date
  2016-08-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] RF-MBE Growth of GaInN Ternary Alloys Using in-situ Monitoring Techniques2016
- Author(s)
  T. Yamaguchi, T. Sasaki, M. Takahashi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
- Organizer
  2016 International Conference on Solid State Devices and Materials
- Place of Presentation
  つくば国際会議場(茨城県・つくば市)
- Year and Date
  2016-09-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] β-Ga2O3結晶における励起子-LOフォノン相互作用2016
- Author(s)
  尾沼猛儀, 齋藤伸吾, 佐々木公平, 後藤健, 増井建和, 山口智広, 本田徹, 倉又朗人, 東脇正高
- Organizer
  2016年春季応用物理学会
- Place of Presentation
  東京工業大学, 東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Recent Advancement of Growth of InN and In-rich InGaN by RF-MBE2016
- Author(s)
  Y. Nanishi, T. Yamaguchi and T. Araki
- Organizer
  45th International School on the Physics of Semiconducting Compounds
- Place of Presentation
  Szczyrk (Poland),
- Year and Date
  2016-06-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] 分子プレカーサー法で製作した銀分散ZnO薄膜の光学的特性2016
- Author(s)
  高大地, 尾沼猛儀, 澁川貴史, 永井裕己, 山口智広, Ja-Soon Jang, 佐藤光史, 本田徹
- Organizer
  2016年春季応用物理学会
- Place of Presentation
  東京工業大学, 東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Recent Advancements and Challenges of Growth of InN and In-rich InGaN by DERI Method2016
- Author(s)
  Y. Nanishi, T. Yamaguchi and T. Araki
- Organizer
  EMN Meeting on Epitaxy
- Place of Presentation
  Budapest (Hungary)
- Year and Date
  2016-09-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Mist-CVD-Grown Crystalline In2O3 Thin-Film Transistors with Low Off-State Current2016
- Author(s)
  S. Aikawa, K. Tanuma, T. Kobayashi, T. Yamaguchi, T. Onuma, T. Honda
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya, Aichi, Japan
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] In-situ monitoring in RF-MBE growth of In-based nitrides2016
- Author(s)
  T. Yamaguchi, T. Sasaki, M. Takahasi, T. Araki, T. Onuma, T. Honda, Y. Nanishi
- Organizer
  The 15th International Symposium on Advanced Technology (ISAT-15)
- Place of Presentation
  Taiwan
- Year and Date
  2016-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] β-Ga2O3薄膜と単結晶の光学定数の比較2016
- Author(s)
  尾沼猛儀、齋藤伸吾、佐々木公平、増井建和、山口智広、本田徹、倉又朗人、東脇正高
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟県新潟市朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Strain Relaxation Analysis Using In-situ X-ray Reciprocal Space Mapping Measurements in RF-MBE Growth of GaInN2016
- Author(s)
  T. Yamaguchi, T. Sasaki, M. Takahasi, T. Onuma, T. Honda, Y. Nanishi
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya, Aichi, Japan
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] ミストCVD法により製作したα-(AlGa)2O3の熱的安定性2015
- Author(s)
  高橋幹夫, 畠山匠, 尾沼猛儀, 山口智広, 本田徹
- Organizer
  2015年秋季応用物理学会
- Place of Presentation
  名古屋国際会議場, 愛知
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] GaInN系LED製作へ向けた結晶成長とデバイスプロセス2015
- Author(s)
  鳴谷建人, 尾沼猛儀、山口智広、本田徹
- Organizer
  2nd Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  工学院大学, 東京
- Year and Date
  2015-11-01
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] "Determination of Direct and Indirect Bandgap-energies of beta-Ga2O3 by polarized transmittance and reflectance spectroscopy2015
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
- Organizer
  57th Electronic Materials Conference (EMC-57)
- Place of Presentation
  The Ohio State University, Columbus, Ohio, USA
- Year and Date
  2015-06-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Epitaxial growth of GaInN by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy2015
- Author(s)
  T. Yamaguchi, T. Honda, T. Onuma, T. Sasaki, M. Takahasi, T. Araki and Y. Nanishi
- Organizer
  第25回日本MRS年次大会
- Place of Presentation
  横浜
- Year and Date
  2015-12-08
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE法によるGaN上GaInN成長におけるその場X線逆格子マッピング測定2015
- Author(s)
  澤田匡崇, 山口智広, 佐々木拓生, 鳴谷建人, 出来亮太, 尾沼猛儀, 本田徹, 高橋正光, 名西 憓之
- Organizer
  2015年秋季応用物理学会
- Place of Presentation
  名古屋国際会議場, 愛知
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] In-situ X-ray Reciprocal Space Mapping Measurements in GaInN Growth on GaN by RF-MBE2015
- Author(s)
  T. Yamaguchi, T. Sasaki, K. Narutani, M. Sawada, R. Deki, T. Onuma, T. Honda, M. Takahasi, Y. Nanishi
- Organizer
  The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
- Place of Presentation
  Mayan Riviera　(Mexico)
- Year and Date
  2015-10-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] 誘導結合型プラズマ反応性イオンエッチングによるInN エッチング2015
- Author(s)
  鳴谷建人, 山口智広, 荒木努, 名西憓之, 尾沼猛儀, 本田徹
- Organizer
  第7回窒化物半導体結晶成長講演会
- Place of Presentation
  仙台、宮城
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Correlation between green fluorescence and impurities on pits formed on surface of InGa2015
- Author(s)
  N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Sekiguchi, T. Yamaguchi, T. Honda, Y. Nakano, M. Sumiya
- Organizer
  The 5th Asia-Arab Sustainable Energy Forum & 7th Int. Workshop on SSB (5AASEF)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2015-05-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Comprehensive Study on Inductively Coupled Plasma Reactive Ion Etching of GaN and InN2015
- Author(s)
  K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma and T. Honda
- Organizer
  The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
- Place of Presentation
  Mayan Riviera　(Mexico)
- Year and Date
  2015-10-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Mist-CVD Growth of In2O32015
- Author(s)
  T. Kobayashi, K. Tanuma, T. Yamaguchi, T. Onuma, and T. Honda
- Organizer
  The 14th International Symposium on Advanced Technology (ISAT-14)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth temperature dependence of Ga2O3 growth rate by mist CVD2015
- Author(s)
  K. Tanuma, T. Onuma, T. Yamaguchi, and T. Honda
- Organizer
  1st International Workshop on Gallium Oxide and Related Materials
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-11-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Correlation between green fluorescent emission and pits formed on surface of GaInN films2015
- Author(s)
  N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Yamaguchi, T. Honda, Y. Nakano, and M. Sumiya
- Organizer
  The 14th International Symposium on Advanced Technology (ISAT-14)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Epitaxial growth of GaInN by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy2015
- Author(s)
  T. Yamaguchi, T. Honda, T. Onuma, T. Sasaki, M. Takahasi, T. Araki and Y. Nanishi
- Organizer
  第25回日本MRS年次大会
- Place of Presentation
  横浜、神奈川
- Year and Date
  2015-12-09
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] 情報化社会の快適化に向けたGaN系デバイス製作に関する研究2015
- Author(s)
  磯野大樹, 尾沼猛儀、山口智広、本田徹
- Organizer
  2nd Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  工学院大学, 東京
- Year and Date
  2015-11-01
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Study of nitridation conditions of Al layer for GaN growth by RF-MBE2015
- Author(s)
  Y. Hoshikawa, T. Onuma, T. Yamaguchi, and T. Honda
- Organizer
  Materials Research Society, 2015 Fall Meeting
- Place of Presentation
  Boston, MA, USA
- Year and Date
  2015-12-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Progress in GaInN Growth by RF-MBE and Development to Optical Device Fabrication2015
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma, T. Honda, Y. Nanishi
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Fransisco, USA
- Year and Date
  2015-02-09
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Growth mechanisms of InN and its alloys using droplet elimination by radical beam irradiation2015
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma,, T. Honda, Y. Nanishi
- Organizer
  EMN droplet
- Place of Presentation
  Phuket, Thailand
- Year and Date
  2015-05-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] ミストCVDによるalpha-(AlGa)2O3混晶成長の基礎検討　-alpha-Ga2O3と比較したalpha-Al2O3の成長速度の検討-2015
- Author(s)
  高橋幹夫, 畠山匠, 尾沼猛儀, 山口智広, 本田徹
- Organizer
  第62回応用物理学会春季講演会
- Place of Presentation
  神奈川
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth temperature dependence of Ga2O3 and In2O3 growth rates in Mist CVD2015
- Author(s)
  K. Tanuma, T. Yamaguchi, T. Onuma, and T. Honda
- Organizer
  Materials Research Society, 2015 Fall Meeting
- Place of Presentation
  Boston, MA, USA
- Year and Date
  2015-12-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] α-Ga2O3 and α-(AlGa)2O3 Buffer Layers in Growth of GaN2015
- Author(s)
  T. Yamaguchi, T. Hatakeyama, K. Tanuma, T. Hirasaki, H. Murakami, T. Onuma and T. Honda
- Organizer
  11th International Conference On Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijing, China
- Year and Date
  2015-09-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Inductively coupled plasma reactive ion etching of GaN and InN2015
- Author(s)
  K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
- Organizer
  34th Electronic Materials Symposium
- Place of Presentation
  守山、滋賀
- Year and Date
  2015-07-16
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Idea to Passivate Dislocations by Positive Usage of Phase Separation in InGaN2015
- Author(s)
  Y. Nanishi, T. Yamaguchi, and T. Araki
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  京都大学（京都府京都市）
- Year and Date
  2015-07-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Optical Anisotropy in (010) Plane of beta-Ga2O3 Single Crystals2015
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
- Organizer
  1st International Workshop on Gallium Oxide and Related Materials
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-11-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Comprehensive study on GaN and InN etching by inductively coupled plasma reactive ion etching2015
- Author(s)
  K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
- Organizer
  The 14th International Symposium on Advanced Technology (ISAT-14)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth of alpha-(AlGa)2O3 by mist CVD and evaluation of its thermal stability2015
- Author(s)
  M. Takahashi, T. Hatakeyama, T. Onuma, T. Yamaguchi, and T. Honda
- Organizer
  1st International Workshop on Gallium Oxide and Related Materials
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-11-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Inductively coupled plasma reactive ion etching of GaN and InN2015
- Author(s)
  K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
- Organizer
  34th Electronic Materials Symposium
- Place of Presentation
  La Forlet Biwako, Shiga
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Dislocation Passivation by Positive Usage of Phase Separation During InGaN Growth by DERI Method2015
- Author(s)
  Y. Nanishi, T. Yamaguchi and T. Araki
- Organizer
  Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Hong Kong (China)
- Year and Date
  2015-12-15
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Growth Mechanisms of InN and Its Alloys Using Droplet Elimination by Radical Beam Irradiation2015
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi,
- Organizer
  2015 EMN Meeting on Droplets
- Place of Presentation
  Phuket (Thailand)
- Year and Date
  2015-05-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] The Role of Impurities in Raman Scattering of InN: from Thin Films to Nanowires2015
- Author(s)
  N. Domènech-Amador, R. Cuscó, R. Calarco, T. Yamaguchi, Y. Nanishi, L.Artús,
- Organizer
  Compound Semiconductor Week 2015
- Place of Presentation
  Santa Barbara(USA)
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] プラズモンによる青色LEDの高輝度化に向けた研究2015
- Author(s)
  高大地, 尾沼猛儀、山口智広、本田徹
- Organizer
  2nd Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  工学院大学, 東京
- Year and Date
  2015-11-01
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Fabrication of p-type NiO thin films by molecular precursor method2015
- Author(s)
  R. Goto, T. Onuma, T. Yamaguchi, H. Nagai, M. Sato, and T. Honda
- Organizer
  1st International Workshop on Gallium Oxide and Related Materials
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-11-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Optical anisotropy in (010) plane of beta-Ga2O3 single crystals2015
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
- Organizer
  1st International Workshop on Gallium Oxide and Related Materials (IWGO-1)
- Place of Presentation
  京都府京都市京都大学桂キャンパス
- Year and Date
  2015-11-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] α-Ga2O3 and α-(AlGa)2O3 Buffer Layers in Growth of GaN2015
- Author(s)
  T. Yamaguchi, T. Hatakeyama, K. Tanuma, T. Hirasaki, H. Murakami, T. Onuma and T. Honda
- Organizer
  11th International Conference On Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijing, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth of Group-III Oxides by Mist Chemical Vapor Deposition and Discussion on Thier Growth Mechanisms2015
- Author(s)
  T. Yamaguchi, K. Tanuma, H. Nagai, T. Onuma, T. Honda, and M. Sato
- Organizer
  22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
- Place of Presentation
  Windwook, Namibia
- Year and Date
  2015-08-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Investigation of in-situ X-ray reciprocal space mapping measurements in GaInN growth on GaN by RF-MBE2015
- Author(s)
  M. Sawada, T. Yamaguchi, T. Sasaki, K. Narutani, R. Deki, T. Onuma, T. Honda, M. Takahashi, and Y. Nanishi
- Organizer
  The 14th International Symposium on Advanced Technology (ISAT-14)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Defect characterization in GaInN on compressive and strain-free GaN underlying layer2015
- Author(s)
  N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Yamaguchi, T. Honda, Y. Nakano, and M. Sumiya
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Optical anisotropy in beta-Ga2O3 crystals grown by melt-growth methods2015
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
- Organizer
  International Conference on Light-Emitting Devices and Thier Industrial Applications ’15 (LEDIA ’15)
- Place of Presentation
  神奈川県横浜市横浜国際平和会議場（パシフィコ横浜）
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Aluminum growth on sapphire substrate with surface nitridation by RF-MBE2015
- Author(s)
  Y. Hoshikawa, S. Osawa, Y. Matsumoto, T. Yamaguchi, T. Onuma, T. Honda
- Organizer
  Conference on LED and its industrial application ’15 (LEDIA’15)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Optical Anisotropy in b-Ga2O3 Crystals Grown by Melt-Growth Methods2015
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki,
- Organizer
  Conference on LED and its industrial application ’15 (LEDIA’15)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Impact of nitridation on GaN growth on sapphire with an Al layer as a sacrifice layer by RF-MBE2015
- Author(s)
  Y. Hoshikawa, S. Osawa, Y. Matsumoto, T. Onuma, T. Yamaguchi, and T. Honda
- Organizer
  The 14th International Symposium on Advanced Technology (ISAT-14)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] ICP-RIEによるGaN,GaInN,InNエッチングとGaInN系LED製作への応用2015
- Author(s)
  鳴谷建人, 山口智広, 荒木努, 名西憓之, 尾沼猛儀, 本田徹
- Organizer
  第4回結晶工学未来塾
- Place of Presentation
  東京
- Year and Date
  2015-10-29
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Fabrication of copper thin films using the molecular precursor method2015
- Author(s)
  H. Nagai, T. Yamaguchi, T. Onuma, I. Takano, T. Honda and M. Sato
- Organizer
  22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
- Place of Presentation
  Windwook, Namibia
- Year and Date
  2015-08-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 誘導結合型プラズマ反応性イオンエッチングによるInN エッチング2015
- Author(s)
  鳴谷建人, 山口智広, 荒木努, 名西憓之, 尾沼猛儀, 本田徹
- Organizer
  第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学, 宮城
- Year and Date
  2015-05-09
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth condition dependence of Ga-In-O films by mist-CVD2015
- Author(s)
  K. Tanuma, R. Goto, T. Onuma, T. Yamaguchi, and T. Honda
- Organizer
  34th Electronic Materials Symposium
- Place of Presentation
  La Forlet Biwako, Shiga
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Fabrication of (Ga, In)2O3-x films on GaN-based LED structures by molecular precursor method for near-UV transparent electrodes2015
- Author(s)
  T. Honda, H. Nagai, S. Fujioka, R. Goto, T. Onuma, T. Yamaguchi, and M.Sato
- Organizer
  22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
- Place of Presentation
  Windwook, Namibia
- Year and Date
  2015-08-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Study on spontaneous emission in nitride-based LEDs with Ag-nanocrystallites ZnO films fabricated by molecular precursor method2015
- Author(s)
  T. Onuma, T. Shibukawa, D. Taka, K. Serizawa, E. Adachi, H. Nagai, T. Yamaguchi, J.-S. Jang, M. Sato, and T. Honda
- Organizer
  22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
- Place of Presentation
  Windwook, Namibia
- Year and Date
  2015-08-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Study on the Phase Transition Temperature of α-(AlGa)2O3 Grown by Mist CVD2015
- Author(s)
  M. Takahashi, T. Hayakeyama, T. Onuma, T. Yamaguchi, and T. Honda
- Organizer
  The 14th International Symposium on Advanced Technology (ISAT-14)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Progress in InGaN growth by RF-MBE and development to optical device fabrication2015
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
- Organizer
  SPIE Photonic West 2015
- Place of Presentation
  San Francisco, USA
- Year and Date
  2015-02-09
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth mechanisms of InN and its alloys using droplet elimination by radical beam irradiation2015
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma,, T. Honda, Y. Nanishi
- Organizer
  Energy Materials Nanotechnology meeting (EMN)
- Place of Presentation
  Phuket, Thailand,
- Year and Date
  2015-05-08
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] ICP-RIEによるGaN,GaInN,InNエッチングとGaInN系LED製作への応用2015
- Author(s)
  鳴谷建人, 山口智広, 荒木努, 名西憓之, 尾沼猛儀, 本田徹
- Organizer
  第4回結晶工学未来塾
- Place of Presentation
  東京農工大学, 小金井, 東京
- Year and Date
  2015-10-29
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Discussion of ZnO based film by mist CVD method using molecular precursor solution2015
- Author(s)
  R. Goto, K. Tanuma, T. Hatakeyama, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
- Organizer
  The 14th International Symposium on Advanced Technology (ISAT-14)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] β-Ga2O3結晶の(010)面における光学的異方性2015
- Author(s)
  尾沼猛儀, 齋藤伸吾, 佐々木公平, 増井建和, 山口智広, 本田徹, 東脇正高
- Organizer
  2015年秋季応用物理学会
- Place of Presentation
  名古屋国際会議場, 愛知
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Correlation between Deep-level Optical Spectroscopy and Cathodoluminescence on Pits Formed on Surface of GaInN Films2015
- Author(s)
  N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Sekiguchi, T. Yamaguchi, T. Honda, Y. Nakano, and M.Sumiya
- Organizer
  11th International Conference On Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijing, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] AR-XPS measurement of AlOx/AlN/GaN heterostructures2015
- Author(s)
  D. Isono, S. Takahashi, Y. Sugiura, T. Onuma, T. Yamaguchi, and T. Honda
- Organizer
  The 14th International Symposium on Advanced Technology (ISAT-14)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Comprehensive study on inductively coupled plasma reactive ion etching of GaN and InN2015
- Author(s)
  K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
- Organizer
  The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
- Place of Presentation
  Mayan Riviera, Mexico
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Beta-Ga2O3結晶の(010)面における光学的異方性2015
- Author(s)
  尾沼猛儀、齋藤伸吾、佐々木公平、増井建和、山口智広、本田徹、東脇正高
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  愛知県名古屋市名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Valence band structure of monoclinic gallium oxide studied by polarized optical measurements2015
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
- Organizer
  The Collaborative Conference on Crystal Growth 2015 (3CG 2015)
- Place of Presentation
  Eaton Hotel, Kowloon, Hong Kong
- Year and Date
  2015-12-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Growth and doping of In-based nitride semiconductors using DERI method2015
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
- Organizer
  The 2015 Materials Challenges in Alternative and Renewable Energy Conference (MCARE 2015)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2015-02-25
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Fundamental study on growth of α-(AlGa)2O3 alloys by mist CVD-A study on growth rate of α-Al2O3 compared with α-Ga2O32015
- Author(s)
  M. Takahashi, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda
- Organizer
  Conference on LED and its industrial application ’15 (LEDIA’15)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Dislocation Passivation by Positive Usage of Phase Separation During RF-MBE Growth of InGaN2015
- Author(s)
  Y. Nanishi, T. Yamaguchi, and T. Araki,
- Organizer
  The 3rd International Conference on Advanced Electromaterials (ICAE2015)
- Place of Presentation
  Jeju (Korea)
- Year and Date
  2015-11-18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] RF-MBE法によるGaN上GaInN成長におけるその場X線逆格子マッピング測定2015
- Author(s)
  澤田匡崇, 山口智広, 佐々木拓生, 鳴谷建人, 出来亮太, 尾沼猛儀, 本田徹, 高橋正光, 名西 憓之
- Organizer
  2015年秋季応用物理学会
- Place of Presentation
  名古屋、愛知
- Year and Date
  2015-09-14
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Thermal stability of alpha-(AlGa)2O3 grown by mist CVD2015
- Author(s)
  M. Takahashi，T. Hatakeyama，T. Onuma，T. Yamaguchi，and T. Honda
- Organizer
  The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
- Place of Presentation
  Mayan Riviera, Mexico
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Impact of nitridation on GaN growth on (0001)sapphire with an Al layer as a release layer by RF-MBE2015
- Author(s)
  Y. Hoshikawa, S. Osawa, Y. Matsumoto, T. Onuma, T. Yamaguchi, and T. Honda
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth of Group-III Oxides by Mist Chemical Vapor Deposition and Discussion on Thier Growth Mechanisms2015
- Author(s)
  T. Yamaguchi, K. Tanuma, H. Nagai, T. Onuma, T. Honda, and M. Sato
- Organizer
  22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
- Place of Presentation
  Namibia
- Year and Date
  2015-08-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Fundamental Study on Local Surface Plasmons in Ag-nanocrystallites ZnO films toward Future Applications in Nitride-based LEDs2015
- Author(s)
  D. Taka, T. Onuma, T. Shibukawa, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
- Organizer
  The 14th International Symposium on Advanced Technology (ISAT-14)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] MgZnO growth on (0001)sapphire by mist chemical vapor deposition2015
- Author(s)
  R. Goto, H. Nagai, T. Yamaguchi, T. Onuma, M. Sato and T. Honda,
- Organizer
  17th International Conference on II-VI Compounds and Related Materials
- Place of Presentation
  Paris, France
- Year and Date
  2015-09-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Determination of Direct and Indirect Bandgap-Energies of beta-Ga2O3 by Polarized Transmittance and Reflectance Spectroscopy2015
- Author(s)
  T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
- Organizer
  57th Electronic Materials Conference (EMC-57)
- Place of Presentation
  Ohio, USA
- Year and Date
  2015-06-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Comprehensive study on inductively coupled plasma reactive ion etching of GaN and InN2015
- Author(s)
  K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
- Organizer
  The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
- Place of Presentation
  Mayan Riviera, Mexico
- Year and Date
  2015-10-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Photoelectron spectra of AlN/GaN heterostructure observed by AR-XPS2015
- Author(s)
  D. Isono, S. Takahashi, Y. Sugiura, T. Yamaguchi, T. Honda
- Organizer
  The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015)
- Place of Presentation
  Seoul, Korea
- Year and Date
  2015-05-17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] In-situ X-ray Reciprocal Space Mapping Measurements in GaInN Growth on GaN by RF-MBE2015
- Author(s)
  T. Yamaguchi, T. Sasaki, K. Narutani, M. Sawada, R. Deki, T. Onuma, T. Honda, M. Takahasi, and Y. Nanishi
- Organizer
  The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
- Place of Presentation
  Mayan Riviera, Mexico
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] In-situ X-ray Reciprocal Space Mapping Measurements in GaInN Growth on GaN by RF-MBE2015
- Author(s)
  T. Yamaguchi, T. Sasaki, K. Narutani, M. Sawada, R. Deki, T. Onuma, T. Honda, M. Takahasi, and Y. Nanishi
- Organizer
  The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
- Place of Presentation
  Mayan Riviera, Mexico
- Year and Date
  2015-10-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Kelvin force microscopic study on GaN layers grown on (111)Al templates by RF-MBE2014
- Author(s)
  T. Honda, T. Yamaguchi, Y. Sugiura, D. Isono, Y. Watanabe, S. Osawa, D. Tajimi, T. Iwabuchi, S. Kuboya, T. Tanikawa, R. Katayama and T. Matsuoka
- Organizer
  18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
- Place of Presentation
  Arizona, USA
- Year and Date
  2014-09-09
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Mist Chemical Vapor Deposition Growth of Ga2O3, In2O3 and Their Alloys2014
- Author(s)
  T. Yamaguchi, K. Tanuma, T. Hatakeyama, T. Onuma and T. Honda
- Organizer
  The 41st International Symposium on Compound Semiconductor (ISCS 2014)
- Place of Presentation
  Montpellier, France
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth and characterization of Ga-In-O by mist CVD2014
- Author(s)
  K. Tanuma, T. Hatakeyama, R. Goto, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The 13th International Symposium on Advanced Technology (ISAT-13)
- Place of Presentation
  Danang, Vietnam
- Year and Date
  2014-11-14
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth of InGaN alloys using DERI method and fabrication of LED structures2014
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
- Organizer
  Energy Materials Nanotechnology open access week (EMN open access week)
- Place of Presentation
  Chengdu, China
- Year and Date
  2014-09-24
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Mist CVD法を用いて製作したalpha-Al2O3基板上Ga-In-O薄膜の評価2014
- Author(s)
  田沼圭亮, 畠山匠, 尾沼猛儀, 山口智広, 窪谷茂幸, 片山竜二, 松岡隆志, 本田徹
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] 下地GaN層の歪みの異なるGaInN薄膜表面ピット形成と蛍光特性2014
- Author(s)
  豊満直樹, Liwen Sang, Wang Jianyu, 山口智広, 本田徹, 角谷正友
- Organizer
  第3回応用物理学会結晶工学分科会結晶工学未来塾
- Place of Presentation
  学習院大学, 豊島区, 東京
- Year and Date
  2014-11-03
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 分子プリカーサｰ法で製作したGa-In-O多結晶薄膜の発光特性2014
- Author(s)
  尾沼猛儀、安野泰平、高野宗一郎、後藤良介、藤岡秀平、畠山匠、原広樹、望月千尋、永井裕己、山口智広、佐藤光史、本田徹
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学淵野辺キャンパス、神奈川県
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] New Approach to Fabricate Green, Red and IR Light Sources Based on Nitride Semiconductors by DERI Method2014
- Author(s)
  Y. Nanishi, T.Yamaguchi and T. Araki,
- Organizer
  31st International Korea-Japan Seminar on Ceramics
- Place of Presentation
  Changwon, Korea
- Year and Date
  2014-11-27
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] RF-MBE growth of GaInN films using DERI method and fabrication of p-n homojunction blue-green light-emitting diodes2014
- Author(s)
  T. Yamaguchi, K. Narutani, T. Onuma, T. Araki, T. Honda and Y. Nanishi
- Organizer
  The 6th International Symposium on Functional Materials (ISFM 2014)
- Place of Presentation
  Singapore
- Year and Date
  2014-08-07
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth of InGaN alloys using DERI method and fabrication of LED structures2014
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
- Organizer
  Energy Materials Nanotechnology open access week (EMN open access week)
- Place of Presentation
  Chengdu, China
- Year and Date
  2014-09-24
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Investigation of Ga-In-O films grown on alpha-Al2O3 substrates by mist CVD2014
- Author(s)
  K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  静岡
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBE growth of GaInN ternary alloys using DERI method and fabrication of pn-GaInN LEDs2014
- Author(s)
  T. Yamaguchi, K. Narutani, T. Onuma, T. Honda, T. Araki and Y. Nanishi
- Organizer
  2014 International Workshop on Future Energy Materials and Devices (IWFEMD 2014)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2014-05-02
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBE growth of GaN on alpha-Ga2O3 and mist CVD growth of Ga2O3 on GaN2014
- Author(s)
  T. Honda, T. Yamaguchi, T. Hatakeyama, D. Tajimi and Y. Sugiura
- Organizer
  SPIE Photonic West 2014 OPTO conference
- Place of Presentation
  The Moscone Center, San Francisco, California, USA
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Mist chemical vapor deposition growth of group-III oxides and its growth mechanism2014
- Author(s)
  T. Yamaguchi, T. Hatakeyama, K. Tanuma, M. Sugimoto, H. Nagai, T. Onuma, M. Sato and T. Honda
- Organizer
  The Corroborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Phuket, Tailand
- Year and Date
  2014-11-05
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Mist CVD growth of Ga-In-O films grown on alpha-Al2O3 substrates2014
- Author(s)
  K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda
- Organizer
  International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014)
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2014-06-12
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBE growth of group-III nitrides and mist CVD growth of group-III oxides2014
- Author(s)
  T. Yamaguchi, T. Onuma, H. Nagai, C. Mochizuki, M. Sato, T. Honda, T. Araki and Y. Nanishi
- Organizer
  Third International Conference on Materials Energy and Environments (ICMEE 2014)
- Place of Presentation
  Hawaii, USA
- Year and Date
  2014-07-03
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBE growth of InGaN alloys and fabrication of optical device structures2014
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
- Organizer
  The Corroborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Phuket, Tailand
- Year and Date
  2014-11-05
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth of oxide thin films by mist chemical vapor deposition – Application of corundum-structured oxides for growth of GaN -2014
- Author(s)
  T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The 13th International Symposium on Advanced Technology (ISAT-13)
- Place of Presentation
  Danang, Vietnam
- Year and Date
  2014-11-14
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] DERI Method; Possible Approach to Longer Wavelength Light Emitters Based on Nitride Semiconductors2014
- Author(s)
  Y. Nanishi, T. Yamaguchi and T. Araki
- Organizer
  6th Forum on New Materials (CIMTEC2014)
- Place of Presentation
  Montecatini Terme, Italy
- Year and Date
  2014-06-18
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] 六方晶GaN中に挿入した一分子層InNの構造完全性による影響2014
- Author(s)
  渡邊菜月, 多次見大樹, 尾沼猛儀, 山口智広, 本田徹, 橋本直樹, 草部一秀, 王科, 吉川明彦
- Organizer
  第3回応用物理学会結晶工学分科会結晶工学未来塾
- Place of Presentation
  学習院大学, 豊島区, 東京
- Year and Date
  2014-11-03
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth of GaInN films using DERI method and fabrication of p-n homojunction blue-green light-emitting diodes2014
- Author(s)
  T. Yamaguchi, K. Narutani, T. Onuma, T. Araki, T. Honda and Y. Nanishi
- Organizer
  The 6th International Symposium on Functional Materials (ISFM 2014)
- Place of Presentation
  Singapore
- Year and Date
  2014-08-07
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Mist chemical vapor deposition growth of group-III oxides and its growth mechanism2014
- Author(s)
  T. Yamaguchi, T. Hatakeyama, K. Tanuma, M. Sugimoto, H. Nagai, T. Onuma, M. Sato and T. Honda
- Organizer
  The 21st International SPACC (The Society of Pure and Applied Coordination Chemistry) Symposium (SPACC 21)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2014-11-01
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Optical properties of GaInN p-n homojunction blue-green light-emitting-diodes2014
- Author(s)
  T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, T. Honda
- Organizer
  International Union of Materials Research Societies, International Conference in Asia 2014 (IUMRS-ICA 2014)
- Place of Presentation
  Fujuoka, Japan
- Year and Date
  2014-08-25
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Ga2O3基板の光学的特性評価2014
- Author(s)
  尾沼猛儀、山口智広、伊藤雄三、本田徹、佐々木公平、増井建和、東脇正高
- Organizer
  日本学術振興会第162委員会第91回研究会「酸化物材料の最近の進展」
- Place of Presentation
  東京都品川区京都大学東京オフィス
- Year and Date
  2014-09-26
- Invited
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Blue-green light emitting diodes using pn-GaInN homojunction type-structure2014
- Author(s)
  K. Narutani, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  静岡
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Fabrication of alpha-(AlGa)2O3 on sapphire substrate by mist CVD2014
- Author(s)
  T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Hirasaki, H. Murakami, T. Yamaguchi and T. Honda
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-15
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBE法によるGaInN厚膜成長とpnホモ接合型LEDの製作2014
- Author(s)
  鳴谷建人, 山口智広, Ke Wang, 荒木努, 名西やすし, Liwen Sang, 角谷正友, 藤岡秀平, 尾沼猛儀, 本田徹
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  愛知
- Year and Date
  2014-07-26
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth of alpha-Ga2O3 on alpha-Al2O3 substrate by mist CVD and growth of GaN on alpha-Ga2O3 buffer layer by RF-MBE2014
- Author(s)
  T. Yamaguchi, T. Hatakeyama, Y. Sugiura, T. Onuma and T. Honda
- Organizer
  18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
- Place of Presentation
  Arizona, USA
- Year and Date
  2014-09-11
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth of pn-GaInN structures by RF-MBE and fabrication of homojunction-type light emitting diodes2014
- Author(s)
  K. Narutani, T. Yamaguchi, K. Wang, T .Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
- Organizer
  18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
- Place of Presentation
  Arizona, USA
- Year and Date
  2014-09-11
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Ga2O3基板の光学特性評価2014
- Author(s)
  尾沼猛儀, 山口智広, 伊藤雄三, 本田徹, 佐々木公平, 増井建和, 東脇正高
- Organizer
  ワイドギャップ半導体光・電子デバイス第162委員会第91回研究会「酸化物材料の最近の進展」
- Place of Presentation
  京都大学東京オフィス, 品川, 東京
- Year and Date
  2014-09-26
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Plasma Induced Point Defects in InN During RF-MBE Growth and Those Reduction by DERI Method2014
- Author(s)
  Y. Nanishi, T. Yamaguchi, T. Araki, A. Uedono and T. Palacios
- Organizer
  Defects in Semiconductors ,Gordon Research Conference,
- Place of Presentation
  Walthum, USA
- Year and Date
  2014-08-05
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Recent Material Studies of III-Nitride Semiconductors for Next Generation Devices2014
- Author(s)
  Y. Nanishi, T. Yamaguchi, T. Araki,　A. Uedono and T. Palacios,
- Organizer
  The Professor Harry C. Gatos Lecture and Prize
- Place of Presentation
  Cambridge, USA
- Year and Date
  2014-07-24
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] RF-MBE法を用いた膜厚の異なるAlテンプレート上GaN成長2014
- Author(s)
  大澤真弥, 渡邉悠斗, 尾沼猛儀, 山口智広, 本田徹
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 名古屋市, 愛知
- Year and Date
  2014-07-26
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE法によるGaInN厚膜成長とpnホモ接合型LEDの製作2014
- Author(s)
  鳴谷建人, 山口智広, Ke Wang, 荒木努, 名西憓之, Liwen Sang, 角谷正友, 藤岡秀平, 尾沼猛儀, 本田徹
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 名古屋市, 愛知
- Year and Date
  2014-07-26
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Optical properties of GaInN p-n homojunction blue-green light-emitting-diodes2014
- Author(s)
  T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, T. Honda
- Organizer
  International Union of Materials Research Societies, International Conference in Asia 2014 (IUMRS-ICA 2014)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2014-08-25
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Recent Progress on InN and InGaN Growth for Future Optoelectronic Devices2013
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
- Organizer
  Conference on LED and Its Industrial Application (LEDIA-13)
- Place of Presentation
  パシフィコ横浜(神奈川県)
- Year and Date
  2013-04-23
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] GaInNのRF-MBE成長とpnホモ接合型青緑色LEDの製作2013
- Author(s)
  鳴谷健人、山口智広、Ke Wang, 荒木努、名西やすし、Liwen Sang, 角谷正友、藤岡秀平、尾沼猛儀、本田徹
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学淵野辺キャンパス、神奈川県
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Influence of native surface oxides on GaN surface band bending2013
- Author(s)
  R. Amiya, Y. Sugiura, D. Tajimi, T. Yamaguchi and T. Honda
- Organizer
  The 32nd Electromaterials Symposium
- Place of Presentation
  Laforet Biwako, Shiga, Japan
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] ミストCVD法を用いたGaN基板上へのGa2O3成長2013
- Author(s)
  多次見大樹、奥秋良隆、畠山匠、金子健太郎、藤田静雄、尾沼猛儀、山口智広、本田徹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス、京都府
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Characterization of fabricated Ga-In-O films by molecular precursor method and their future application of UV transparent electrodes2013
- Author(s)
  T. Yasuno, R. Goto, H. Nagai, H. Hara, Y. SUgiura, T. Yamaguchi, M. Sato and T. Honda
- Organizer
  The 20th International SPACC Symposium
- Place of Presentation
  Changchun University of Science and Technology, China
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Effects of surface modification on emission property of GaN Schottky diodes2013
- Author(s)
  S. Fujioka, R. Amiya, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The 32nd Electromaterials Symposium
- Place of Presentation
  Laforet Biwako, Shiga, Japan
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 表面酸化物のGaN表面フェルミ準位と表面バンド曲がりに及ぼす影響2013
- Author(s)
  網谷良介、多次見大樹、杉浦洋平、山口智広、本田徹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス、京都府
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] GaN系ショットキー型発光ダイオードにおける(Al, Ga)Ox/GaN界面準位の影響2013
- Author(s)
  藤岡秀平、網谷良介、尾沼猛儀、山口智広、本田徹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス、京都府
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 分子プレカーサｰ法を用いたIn添加ZnO薄膜の発光特性2013
- Author(s)
  後藤良介、安野泰平、永井裕己、山口智広、本田徹
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学淵野辺キャンパス、神奈川県
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] In-situ RF-MBE growth of AlOx/AlN/GaN heterostructures2013
- Author(s)
  Y. Sugiura, T. Yamaguchi, T. Honda, and M. Higashiwaki
- Organizer
  International Symposium on Compound Semiconductors (ISCS 2013)
- Place of Presentation
  兵庫県神戸市神戸国際会議場
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] 蛍光顕微鏡と2次イオン質量分析を用いたGaInN薄膜の不均一評価2013
- Author(s)
  豊満直樹、Liwen Sang, 山口智広、本田徹、角谷正友
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学淵野辺キャンパス、神奈川県
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Characterization of Ga-In-O films fabricated by molecular precursor method2013
- Author(s)
  T. Yasuno, T. Oda, H. Nagai, H. Hara, Y. Sugiura, T.Yamaguchi, M. Sato and T. Honda
- Organizer
  The 32nd Electromaterials Symposium
- Place of Presentation
  Laforet Biwako, Shiga, Japan
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth of InN and related alloys using DERI method toward fabrication of optoelectronic devices2013
- Author(s)
  T. Yamaguchi, K. Wang, T. Honda, E. Yoon, T. Araki and Y. Nanishi
- Organizer
  The 2nd International Conference on Advanced Electromaterials
- Place of Presentation
  ICC jeju, Jeju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 表面酸化物によるGaN表面フェルミ準位に及ぼす影響2013
- Author(s)
  網谷良介、多次見大樹、杉浦洋平、山口智広、本田徹
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物成長講演会
- Place of Presentation
  大阪大学銀杏会館、吹田市、大阪府
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Polarized Raman spectra in β-Ga2O3 crystals2013
- Author(s)
  T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Masui, and T. Honda
- Organizer
  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  University of Warsaw, Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] beta-Ga2O3結晶における青色発光強度と抵抗率の相関2013
- Author(s)
  尾沼猛儀、藤岡秀平、山口智広、東脇正高、佐々木公平、増井建和、本田徹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス、京都府
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth of GaN films on nitridated alpha-Ga2O3 buffer layer2013
- Author(s)
  T. Yamaguchi, T. Hatakeyama, D. Tajimi, Y. Sugiura, T. Onuma and T. Honda
- Organizer
  The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  University of Warsaw, Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth of AlOx/AlN/GaN heterostructures2013
- Author(s)
  杉浦洋平、山口智広、本田徹、東脇正高
- Organizer
  32nd Electronic Materials Syposium
- Place of Presentation
  滋賀県守山市ラフォーレ琵琶湖
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Effects of (Al, Ga)Ox/GaN interface states on GaN-based Schottky-type light-emitting diodes2013
- Author(s)
  S. Fujioka, R. Amiya, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The 2nd International Conference on Advanced Electromaterials
- Place of Presentation
  ICC jeju, Jeju, Korea
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth of GaN films on alpha-Ga2O3/sapphire template2013
- Author(s)
  T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura and T. Honda
- Organizer
  The 32nd Electromaterials Symposium
- Place of Presentation
  Laforet Biwako, Shiga, Japan
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] The GaN growth on pseudo Al templates by molecular beam epitaxy2013
- Author(s)
  S. Osawa, T. Hatakeyama, D. Tajimi, T. Yamaguchi and T. Honda
- Organizer
  The 32nd Electromaterials Symposium
- Place of Presentation
  Laforet Biwako, Shiga, Japan
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth of GaN/Al heterostructures on 4H-SiC2013
- Author(s)
  S. Osawa, D. Tajimi, T. Yamaguchi and T. Honda
- Organizer
  The 2nd International Conference on Advanced Electromaterials
- Place of Presentation
  ICC jeju, Jeju, Korea
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 4H-SiC上の疑似Al基板製作と疑似基板上へのGaN RF-MBE成長2013
- Author(s)
  大澤真弥、多次見大樹、山口智広、本田徹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス、京都府
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Use of alpha-Ga2O3/alpha-Al2O3 templates in GaN growth2013
- Author(s)
  T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. SUgiura and T. Honda
- Organizer
  2013 JSPS-MRS Joint Symposia
- Place of Presentation
  同志社大学京田辺キャンパス、京都府
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Ga2O3 and In2O3 growth by mist CVD2013
- Author(s)
  K. Tanuma, T. Yamaguchi, T. Hatakeyama, T. Onuma and T. Honda
- Organizer
  The 12th International Symposium on Advanced Technology
- Place of Presentation
  Southern Taiwan University of Science and Technology, Tainan, Taiwan
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] β-Ga2O3結晶における青色発光強度と抵抗率の相関2013
- Author(s)
  尾沼猛儀、藤岡秀平、山口智広、東脇正高、佐々木公平、増井建和、本田徹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都府京田辺市同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] Mist CVD growth of alpha-Ga2O3 on sapphire substrates and RF-MBE growth of GaN on alpha-Ga2O3/sapphire templates2013
- Author(s)
  T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura, R. Amiya, T. Onuma and T. Honda
- Organizer
  The 12th International Symposium on Advanced Technology
- Place of Presentation
  Southern Taiwan University of Science and Technology, Tainan, Taiwan
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth and characterization of GaN films on alpha-Ga2O3/sapphire template2013
- Author(s)
  T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura and T. Honda
- Organizer
  The 10th International Conference on Nitride Semiconductors
- Place of Presentation
  Gaylord Convention Center, Washington DC, USA
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] ミストCVD法を用いたGa2O3結晶成長における成長速度の温度依存性2013
- Author(s)
  田沼圭亮、杉本麻由花、畠山匠、尾沼猛儀、山口智広、本田徹
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学淵野辺キャンパス、神奈川県
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Fabrication of Ga-In-O films by molecular precursor method and their future application of transparent electrodes2013
- Author(s)
  T. Yasuno, H. Nagai, H. Hara, Y. Sugiura, T. Yamaguchi, M. Sato and T. Honda
- Organizer
  The 16th International Conference on II-VI Compounds and Related Materials
- Place of Presentation
  Nagahama Royal Hotel, Nagahama, Shiga, Japan
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE法による疑似Al基板上へのGaN成長2013
- Author(s)
  多次見大樹、大澤真弥、山口智広、本田徹
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物成長講演会
- Place of Presentation
  大阪大学銀杏会館、吹田市、大阪府
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Polarized Raman spectra in beta-Ga2O3 crystals2013
- Author(s)
  T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Matsui and T. Honda
- Organizer
  The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  University of Warsaw, Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth of AlOx/AlN/GaN heterostructures2013
- Author(s)
  Y. SUgiura, T. Yamaguchi, T. Hatakeyama, T. Honda and M. Higashiwaki
- Organizer
  The 32nd Electromaterials Symposium
- Place of Presentation
  Laforet Biwako, Shiga, Japan
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Impact of the surface modification of the Ga- and N-face n-GaN Schottky diodes with low reverse-bias leakage current2013
- Author(s)
  T. Honda, T. Yamaguchi, N. Sakai, S. Fujioka, R. Amiya and Y. Sugiura
- Organizer
  The 10th International Conference on Nitride Semiconductors
- Place of Presentation
  Gaylord Convention Center, Washington DC, USA
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] ラジカルモニタリング技術を応用したDERI法InGaN成長の検討2012
- Author(s)
  阪口順一、上松尚.油谷匡胤、齋藤巧、山口智広、荒木努、名西〓之、T.Fujishima、E.Matioli、T.Palacios
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、東京
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors-Band gap-2012
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
- Organizer
  2012 Fall Meeting of the Korean Ceramic Society
- Place of Presentation
  大田(韓国)
- Year and Date
  2012-10-19
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Application of DERI Method to thick InGaN and InN/InGaN MQW structure Growth2012
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  KAUST-UCSB-NSF Workshop on Solid-State Lighting
- Place of Presentation
  Thwal(サウジアラビア)(招待講演)
- Year and Date
  2012-02-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Importance of Advanced Plasma for Frontier Nitride Semiconductor Technologies2012
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2012
- Place of Presentation
  中部大学(愛知県)(基調講演)
- Year and Date
  2012-03-05
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 窒化物半導体新領域開拓にむけての材料技術最近の展開2012
- Author(s)
  名西〓之、山口智広、王科、荒木努、E.Yoon
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、東京(招待講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Application of DERI Method to thick InGaN and InN/InGaN MQW structure Growth2012
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  KAUST-UCSB-NSF Workshop on Solid-State Lighting
- Place of Presentation
  Saudi Arabia(invited)
- Year and Date
  2012-02-13
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] A Natural PN Junction in Mg-Doped In-Polar InN Film Directly Detected by High Resolution Angle-Resolved Hard X-Ray Photoelectron Spectroscopy2012
- Author(s)
  A.L.Yang, Y.Yamashita, T.Yamaguchi, M.Imura, M.Kaneko, O.Sakata, Y.Nanishi, K.Kobayashi
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法を応用したInGaN/InGaN量子井戸構造の作製2012
- Author(s)
  上松尚、山口智広、荒木努、名西〓之
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Importance of Advanced Plasma for Frontier Nitride Semiconductor Technologies2012
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2012
- Place of Presentation
  Nagoya, Japan(invited)
- Year and Date
  2012-03-05
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Reduction of Threading Dislocation Density by Regrowth on In-Polar InN2012
- Author(s)
  T.Araki, T.Sakamoto, A.Miki, N.Uematsu, Y.Takamatsu, T.Yamaguchi, Y.Eoon, Y.Nanishi
- Organizer
  SPIE Photonics West 2012
- Place of Presentation
  サンフランシスコ(アメリカ)
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] InN Overgrowth Through in Situ A1N Nano-Mask on Sapphire Substrate2012
- Author(s)
  王科、荒木努、武内道一、山口智広、名西〓之
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Free Holes in Mg Doped InN Confirmed by Thermopower Experiments2012
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2012
- Place of Presentation
  中部大学(愛知県)
- Year and Date
  2012-03-08
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] ラジカルモニタリング技術を応用したDERI法InGaN成長の検討2012
- Author(s)
  阪口順一、上松尚、油谷匡胤、齊藤巧、山口智広、荒木努、名西〓之、T.Fujishima、E.Matioli、T.Palacios
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] InNおよびInGaN成長の最近の進展-DERI法の結果が示唆すること-2012
- Author(s)
  名西〓之、山口智広、荒木努
- Organizer
  東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学、宮城(招待講演)
- Year and Date
  2012-01-12
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] DERI法を応用したInGaN/InGaN量子井戸構造の作製2012
- Author(s)
  上松尚、山口智広、荒木努、名西〓之
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、東京
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] InNおよびInGaN成長の最近の進展-DERI法の結果が示唆すること-2012
- Author(s)
  名西〓之、山口智広、荒木努
- Organizer
  東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2012-01-12
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Development of Growth and Characterization of InN, In-rich InGaN and Those Nano-structures2012
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
- Organizer
  IEEE International Conference on Solid-State and Integrated Circuit Technology、発表年月日
- Place of Presentation
  西安(中国)
- Year and Date
  2012-10-31
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 窒化物半導体新領域開拓にむけての材料技術最近の展開2012
- Author(s)
  名西〓之、山口智広、王科、荒木努、E.Yoon
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)(招待講演)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T. Yamaguchi, Y. Nanishi
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  サンフランシスコ(アメリカ)
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth and fabrication of InN-based III-nitride structure using droplet elimination process by radical beam irradiation2011
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, USA(招待講演)
- Year and Date
  2011-01-25
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] 窒化物光半導体デバイスの新しい可能性を求めて-InNと関連混晶の新しい成長技術の開発と現状-2011
- Author(s)
  名西〓之、山口智広、荒木努
- Organizer
  LED総合フォーラム2011in徳島
- Place of Presentation
  徳島グランヴィリオホテル(徳島県)(招待講演)
- Year and Date
  2011-06-25
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Strong Luminescence from Self-Assembled InN Nanocolumns with Few Dislocations Grown by Molecular Beam Epitaxy2011
- Author(s)
  K.Wang, T.Araki, T.Yamaguchi, E.Yoon, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-15
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Proposal of Thick InGaN Film Growth Using Advanced Droplet Elimination Process by Radical-Beam Irradiation2011
- Author(s)
  T.Yamaguchi, N.Uematsu, R.Iwamoto, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN2011
- Author(s)
  T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
- Place of Presentation
  Nagoya institute of technology, Aichi Japan
- Year and Date
  2011-03-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証2011
- Author(s)
  櫻井秀昭、井脇明日香、岩本亮輔、山口智広、城川潤二郎、荒木努、名西〓之
- Organizer
  2011年(平成23年)春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wangand T. Araki
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German - Japanese - Spanish Joint Workshop
- Place of Presentation
  グラナダ(スペイン)
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
- Place of Presentation
  グラナダ(スペイン)(招待講演)
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
- Place of Presentation
  Granada Spain
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Thick InGaN Growth Using DERI Method2011
- Author(s)
  N.Uematsu, T.Yamaguchi, R.Iwamoto, T.Sakamoto, T.Fujishima, T.Araki, Y.Nanishi
- Organizer
  30th Electronic Materials Symposium (EMS30)
- Place of Presentation
  ラフォーレ琵琶湖、滋賀
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Growth and fabrication of InN-based III-nitride structure using droplet elimination process by radical beam irradiation2011
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, USA
- Year and Date
  2011-01-25
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Recent Progress of DERI Process for Growth of InN and Related Alloys2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, T.Araki, E.Yoon
- Organizer
  40th "Jaszowiec" International School and Conference on the Physics of Semiconductors
- Place of Presentation
  Krynica-Zdroj(ポーランド)(招待講演)
- Year and Date
  2011-06-29
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Evaluation of P-type InN Using Temperature Dependence of I-V Characteristics2011
- Author(s)
  H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Study on DERI Growth of InN-Role of Indium Droplet-2011
- Author(s)
  T.Katsuki, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  30th Electronic Materials Symposium (EMS30)
- Place of Presentation
  ラフォーレ琵琶湖、滋賀
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] In極性InN上への再成長による貫通転位密度低減2011
- Author(s)
  荒木努、坂本務、三木彰、上松尚、高松祐基、山口智広、名西やすし
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス(山形県)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Thick InGaN Growth Using DERI Method2011
- Author(s)
  N.Uematsu, T.Yamaguchi, R.Iwamoto, T.Sakamoto, T.Fujishima, T.Araki, Y.Nanishi
- Organizer
  30th Electronic Materials Symposium (EMS30)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, CA USA
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method2011
- Author(s)
  T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
- Organizer
  3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
- Place of Presentation
  Nagoya institute of technology, Aichi Japan
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] N極性及びIn極性のInN-MIS構造の作製と評価2011
- Author(s)
  森本健太、三木彰、山口智広、前田就彦、荒木努、名西〓之
- Organizer
  2011年(平成23年)春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Fabrication of Nano-structure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE2011
- Author(s)
  T.Araki, S.Yamashita, T.Yamaguchi, E.Yoon, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法を用いたA面GaNテンプレート上A面InNの作成2011
- Author(s)
  油谷匡胤、山口智広、荒木努、名西〓之
- Organizer
  平成23年電気関係学会関西支部連合大会
- Place of Presentation
  兵庫県立大学書写キャンパス(兵庫県)
- Year and Date
  2011-10-30
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  Electronic Materials Conference 2011 (EMC2011)
- Place of Presentation
  サンタバーバラ(アメリカ)
- Year and Date
  2011-06-24
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] ECR-MBE法を用いたA面InNナノ構造の配列制御選択成長2011
- Author(s)
  荒木努、山下修平、山口智広、名西〓之
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場(茨城県)(招待講演)
- Year and Date
  2011-11-04
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Investigation of InN Nanocolumns Grown on GaN Templates by Molecular Beam Epitaxy2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証2011
- Author(s)
  櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学神奈川県厚木市
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth of InN Nanocolumns on GaN Templates and Sapphire by RF-MBE2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  鳥羽国際ホテル(三重県)
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress of InN and Related Alloys Grown by DERI Method2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  2011 E-MRS Spring Meeting
- Place of Presentation
  ニース(フランス)(招待講演)
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Anharmonic Phonon Decay in InN Thin Films2011
- Author(s)
  N.Domenech-Amador, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] PN Junction Measurement in InN2011
- Author(s)
  E.A.Llado, M.Mayer, N.Mayer, T.Yamaguchi, K.Wang, E.Haller, Y.Nanishi, J.Ager
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] InNおよびGaN成長における原子脱離過程その場観察2011
- Author(s)
  山口智広、荒木努、本田徹、名西〓之
- Organizer
  応用物理学会結晶工学分科会主催2011年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  サンフランシスコ(アメリカ)(招待講演)
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN2011
- Author(s)
  T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  Third International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2011)
- Place of Presentation
  名古屋工業大学(愛知県)
- Year and Date
  2011-03-07
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Application of DERI Method to InGaN Growth and Mg Doping2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  Advanced Workshop on 'Frontiers in Electronics' (WOFE 2011)
- Place of Presentation
  San Juan, Puerto Rico(invited)
- Year and Date
  2011-12-21
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Study on DERI Growth of InN-Role of Indium Droplet-2011
- Author(s)
  T.Katsuki, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  30th Electronic Materials Symposium (EMS30)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Investigation of InN Nanocolumns Grown on GaN Templates by Molecular Beam Epitaxy2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
- Place of Presentation
  Granada Spain
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Unintentional Incorporation of Hydrogen in InN with Different Surface Orientations2011
- Author(s)
  V.Darakchieva, K.Lorenz, M.-Y.Xie, N.P.Barradas, E.Alves, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  2011 E-MRS Spring Meeting
- Place of Presentation
  ニース(フランス)
- Year and Date
  2011-05-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN2011
- Author(s)
  T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
- Place of Presentation
  Nagoya Institute of Technology, Aichi Japan
- Year and Date
  2011-03-07
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress of InN and Related Alloys Grown by DERI Method2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  2011 E-MRS Spring Meeting
- Place of Presentation
  Strasbourg, France(invited)
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] In Situ Monitoring Techniques by DERI Method2011
- Author(s)
  T.Yamaguchi, K.Wang, T.Araki, T.Honda, E.Yoon, Y.Nanishi
- Organizer
  30th Electronic Materials Symposium (EMS30)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Strong Luminescence from Self-Assembled InN Nanocolumns with Few Dislocations Grown by Molecular Beam Epitaxy2011
- Author(s)
  K.Wang, T.Araki, T.Yamaguchi, E.Yoon, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-15
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] N極性及びIn極性のInN-MIS構造の作製と評価2011
- Author(s)
  森本健太、三木彰、山口智弘、前田就彦、荒木努、名西〓之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学神奈川県厚木市
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth of InN Nanocolumns on GaN Templates and Sapphire by RF-MBE2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Mie, Japan
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method2011
- Author(s)
  T.Araki, T.Sakamoto, R.Iwamto, T.Yamaguchi, E.Yoon, Y.Nanishi
- Organizer
  Third International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2011)
- Place of Presentation
  名古屋工業大学(愛知県)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Application of DERI Method to InGaN Growth and Mg Doping2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
- Organizer
  Advanced Workshop on 'Frontiers in Electronics' (WOFE 2011)
- Place of Presentation
  San Juan(プエルトリコ)(招待講演)
- Year and Date
  2011-12-21
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Temperature Dependence of I-V Characteristics of p-type InN Grown by RF-MBE2011
- Author(s)
  H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  30th Electronic Materials Symposium (EMS30)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Proposal of Thick InGaN Film Growth Using Advanced Droplet Elimination Process by Radical-Beam Irradiation2011
- Author(s)
  T.Yamaguchi, N.Uematsu, R.Iwamoto, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
- Place of Presentation
  グラスゴー(スコットランド)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Proposal of thick InGaN film growth using advanced droplet elimination process by radical-beam irradiation2011
- Author(s)
  T. Yamaguchi, N. Uematsu, R. Iwamoto, T. Araki, E. Yoon and Y. Nanishi
- Organizer
  The 9th International Conference on Nitride Semiconductors(ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Growths of InN/InGaN Periodic Structure and Thick InGaN Film Using Droplet Elimination Process by Radical-Beam Irradiation2011
- Author(s)
  T.Yamaguchi, T.Araki, T.Honda, E.Yoon, Y.Nanishi
- Organizer
  28th North American Molecular Beam Epitaxy Conference (NAMBE2011)
- Place of Presentation
  サンディエゴ(アメリカ)
- Year and Date
  2011-08-16
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, CA USA
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress of DERI Process for Growth of InN and Related Alloys2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, T.Araki, E.Yoon
- Organizer
  40th "Jaszowiec" International School and Conference on the Physics of Semiconductors
- Place of Presentation
  Jaszowiec, Poland(invited)
- Year and Date
  2011-06-29
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  Electronic Materials Conference 2011 (EMC2011)
- Place of Presentation
  Santa Barbara, USA
- Year and Date
  2011-06-24
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method2011
- Author(s)
  T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
- Organizer
  3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
- Place of Presentation
  Nagoya Institute of Technology, Aichi Japan
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE2010
- Author(s)
  T.Yamaguchi, H.Umeda, T Sakamoto, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Evidence of Rectification in InN pn Junctions2010
- Author(s)
  N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長2010
- Author(s)
  山下修平、山口智広、荒木努、名西〓之
- Organizer
  平成22年電気関係学会関西連合大会
- Place of Presentation
  立命館大学キャンパス滋賀県草津市
- Year and Date
  2010-11-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断2010
- Author(s)
  勝木拓郎、福本英太、山口智広、荒木努、名西〓之
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学三重県三重市
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] In組織揺らぎのメカニズム解明に向けたRF-MBE成長InGaNのCL測定評価2010
- Author(s)
  木村拓也、福本英太、山口智広、王科、金子昌充、武田彰史、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Free Hole Concentration and Mobility in InN : Mg2010
- Author(s)
  N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法InGaN成長を用いた厚膜化への試み2010
- Author(s)
  上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス長崎県長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Characterization of Contact Resistance of Ti/Al/Ti/Au Ohmic Metal on N-polar and In-polar InN Films mown by RF-MBE2010
- Author(s)
  K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Unintentional incorporation of hydrogen in InN : diffusion kinetics and effect of surface orientation2010
- Author(s)
  V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, L.Artus, D.Rogala, H.-W.Becker, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 電流・電圧特性の温度依存性評価によるp型InNの検証2010
- Author(s)
  櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学神奈川県厚本市
- Year and Date
  2010-03-24
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] InNデバイス作製プロセスへのウエットエッチングの適用2010
- Author(s)
  三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス長崎県長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method2010
- Author(s)
  T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
- Organizer
  The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Beijing, China
- Year and Date
  2010-05-18
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
- Author(s)
  T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  Takamatsu symbol tower, Kagawa Japan
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method2010
- Author(s)
  T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE 2010)
- Place of Presentation
  Berlin Germany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Mg Doped InN and Search For Holes2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.AgerIII, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
- Author(s)
  T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials(IPRM2010)
- Place of Presentation
  Takamatsu symbol tower, Kagawa Japan
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Electronic Materials Conference 2010 (EMC2010)2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
- Organizer
  Electronic Materials Conference 2010 (EMC2010)
- Place of Presentation
  Notre Dame, Indiana, USA
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] C面、A面、M面InNの表面化学状態の解析2010
- Author(s)
  高木俊樹、金子昌充、山口智広、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] In Situ Monitoring of InN Grown by RF-MBE2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  ISPlasma2010
- Place of Presentation
  名古屋(日本)
- Year and Date
  2010-03-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Unintentional incorporation of hydrogen in InN : diffusion kinetics and effect of surface orientation2010
- Author(s)
  V.Darakchieva, K.Lorenz, N.P Barradas, E.Alves, L.Artus, D.Rogala, H.-W.Becker.C.L.Hsiao, L.C.Chen, L.W.To, T.Yamaguchi, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  Third International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE2010
- Author(s)
  T.Yamaguchi, H.Umeda, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 窒化物半導体光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価2010
- Author(s)
  名西〓之、山口智広、王科、荒木努、E.Yoon
- Organizer
  応用物理学会九州支部学術講演会
- Place of Presentation
  九州大学(福岡県)(招待講演)
- Year and Date
  2010-11-27
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Free Hole Concentration and Mobility in InN : Mg2010
- Author(s)
  N.Miller, J.W.Ager III, E.E.Haller, W_ Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法を用いたInGaN成長と組成制御への試み2010
- Author(s)
  岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス長崎県長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用2010
- Author(s)
  山口智広、荒木努、名西〓之
- Organizer
  第2回窒化物半導体結晶成長講演会(プレISGN-3)
- Place of Presentation
  三重大学(三重県)(招待講演)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Characterization of Contact Resistance of Ti/Al/Ti/Au Ohmic Metal on N-polar and In-polar InN Films grown by RF-MBE2010
- Author(s)
  K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Evidence of Free Holes in Mg Doped InN2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE2010
- Author(s)
  T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
- Organizer
  The 16th International Conference on Crystal Growth (ICCG16)
- Place of Presentation
  Beijing China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断2010
- Author(s)
  勝木拓郎、福本英太、山口智広、荒木努、名西〓之
- Organizer
  第2回窒化物半導体結晶成長講演会(プレISGN-3)
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010
- Author(s)
  F.J.Manjon, J.Ibanez, A.Segura, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
- Organizer
  48th European High Pressure Research Group Conference (EHPRG)
- Place of Presentation
  Uppsala Sweden
- Year and Date
  2010-07-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Aloys and Challenges for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerIII, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010
- Author(s)
  J.Ibanez, A.Segura, F.J.Manjon, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
- Organizer
  2010 E-MRS Spring Meeting
- Place of Presentation
  Strasbourg France
- Year and Date
  2010-06-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure2010
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  2010 International Coference on Solid State Devices and Materials (SSDM2010)
- Place of Presentation
  東京大学(東京都)(招待講演)
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Raman scattering study of the temperature dependence of phonons in InN2010
- Author(s)
  N.Domenech-Amador, L.Artus, R.Cusco, J.Ibanez, T.Yamaguchi, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Undoped and Mg-doped InN grown using droplet elimination by radical-beam irradiation method2010
- Author(s)
  T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
- Organizer
  The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Peking, China
- Year and Date
  2010-05-18
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] N極性及びIn極性のInN-MIS構造の作製と評価2010
- Author(s)
  森本健大、三木彰、山口智弘、前田就彦、荒木努、名西〓之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学神奈川県厚木市
- Year and Date
  2010-03-24
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Hydrogen in InN : Ubiquitous Phenomena in Molecular Beam Epitaxy Grown Material2010
- Author(s)
  V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  CIMTEC2010 (5th Forum on New Materials)
- Place of Presentation
  Montecatini Terme, Tuscany Italy
- Year and Date
  2010-06-16
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用2010
- Author(s)
  山口智広、荒木努、名西〓之
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学三重県三重市
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] A面InN成長のための低温InNバッファ層最適成長条件の検討2010
- Author(s)
  荒木努、川島圭介、山口智広、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Raman scattering study of the temperature dependence of phonons in InN2010
- Author(s)
  N.Domenech-Amador, L.Artus, R.Cusco, J.Ibanez, T.Yamaguchi, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure2010
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Organizer
  2010 International Coference on Solid State Devices and Materials(SSDM2010)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長2010
- Author(s)
  山下修平、山口智広、荒木努、名西〓之
- Organizer
  平成22年電気関係学会関西連合大会
- Place of Presentation
  立命館大学キャンパス滋賀県草津市
- Year and Date
  2010-11-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, E.Yoon
- Organizer
  The second LED domestic conference
- Place of Presentation
  Seoul Korea
- Year and Date
  2010-08-25
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method2010
- Author(s)
  T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE 2010)
- Place of Presentation
  Berlin Germany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
- Author(s)
  T.Araki, H.Umeda, T Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
- Organizer
  22th Indium Phosphide and Related Materials Conference (IPRM2010)
- Place of Presentation
  高松シンボルタワー(香川県)
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] TEMを用いたDERI法ドープInNの極微構造評価2010
- Author(s)
  坂本務、山口智広、岩本亮輔、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Growth, Monitoring and InN/InGaN MQW Structure Fabrication by DERI Method2010
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  IX International Conference of Polish Society for Crystal Growth
- Place of Presentation
  Gdansk-Sobieszewo Poland
- Year and Date
  2010-05-25
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法を用いたInGaN成長と組成制御への試み2010
- Author(s)
  岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス長崎県長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010
- Author(s)
  F.J.Manjon, J.Ibanez, A.Segura, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
- Organizer
  48th European High Pressure Research Group Conference (EHPRG)
- Place of Presentation
  Uppsala Sweden
- Year and Date
  2010-07-26
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] In組織揺らぎのメカニズム解明に向けたRF-MBE成長InGaNのCL測定評価2010
- Author(s)
  木村拓也、福本英太、山口智広、王科、金子昌充、武田彰史、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] In Situ Monitoring of InN Grown by RF-MBE2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E..Yoon, Y.Nanishi
- Organizer
  ISPlasma2010
- Place of Presentation
  名古屋(日本)
- Year and Date
  2010-03-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] TEMを用いたDERI法ドープInNの極微構造評価2010
- Author(s)
  坂本努、山口智広、岩本亮輔、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス長崎県長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of InN and related alloys using droplet elimination by radical beam irradiation2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerIII, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Florida, USA(招待講演)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Mg doped InN and search for holes2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法InGaN成長を用いた厚膜化への試み2010
- Author(s)
  上松尚、山口智広、岩本亮輔、坂本務、藤嶌辰也、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Fabrication of InN/InGaN Multi Quantum Well Structures by Droplet Elimination by Radical-Beam Irradiation2010
- Author(s)
  H.Umeda, T.Yamaguchi, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  ISPlasma2010
- Place of Presentation
  名古屋(日本)
- Year and Date
  2010-03-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Evidence of Rectification in InN pn Junctions2010
- Author(s)
  N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method2010
- Author(s)
  T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
- Organizer
  The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Beijing China
- Year and Date
  2010-05-18
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
- Author(s)
  Y. Nanishi, T. Yamaguchi, K. Wang, T. Araki, M. Kaneko, E. Yoon, N. Miller, J. W. Ager III, K. M. Yu, W. Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  タンパ(アメリカ)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用2010
- Author(s)
  山口智広、荒木努、名西之
- Organizer
  第2回窒化物半導体結晶成長講演会(プレISGN-3)
- Place of Presentation
  三重大学、三重県
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma2010
- Author(s)
  T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Free-Charge Carrier Properties and Doping Mechanisms of Thin Films of InN and Related Alloys2010
- Author(s)
  V.Darakchieva, M.Schubert, K.Lorenz, N.P.Barradas, E.Alves, T.Hofmann, B.Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
- Place of Presentation
  Albany, New York USA
- Year and Date
  2010-05-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Fabrication of InN/InGaN Multi Quantum Well Structures by Droplet Elimination by Radical-Beam Irradiation2010
- Author(s)
  H.Umeda, T.Yamaguchi, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  ISPlasma2010
- Place of Presentation
  名古屋(日本)
- Year and Date
  2010-03-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価2010
- Author(s)
  名西〓之、山口智広、王科、荒木努、Euijoon Yoon
- Organizer
  応用物理学会九州支部学術講演会
- Place of Presentation
  九州大学伊都キャンパス福岡県福岡市
- Year and Date
  2010-11-27
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] A面InN成長のための低温InNバッファ層最適成長条件の検討2010
- Author(s)
  荒木努、川島圭介、山口智広、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth, monitoring and InN/InGaN MQW structure fabrication by DERI method2010
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  IX International Conference of Polish Society for Crystal Growth
- Place of Presentation
  Gdansk-Sobieszewo, Poland(招待講演)
- Year and Date
  2010-05-24
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Mg doped InN and search for holes2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討2010
- Author(s)
  荒木努、川島圭介、山口智広、名西〓之
- Organizer
  2010年度電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪大学中之島センター大阪府大阪市
- Year and Date
  2010-11-11
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Wet Etching Process for InN Device Fabrication2010
- Author(s)
  A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Optical Hall Effect in InN : Bulk Doping Mechanism and Surface Electron Accumulation Properties2010
- Author(s)
  V.Darakchieva, M.Schubert, T.Hofmann, Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  PLCN10
- Place of Presentation
  Cuernavaca Mexico
- Year and Date
  2010-04-12
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure2010
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  2010 International Coference on Solid State Devices and Materials
- Place of Presentation
  Tokyo Univ, Japan
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Wet Etching by KOH for InN Device Fabrication2010
- Author(s)
  A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Characterization of contact resistance of Ti/Al/Ti/Au ohmic metal on N-polar and In-polar InN films grown by RF-MBE2010
- Author(s)
  K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] 硬X線光電子分光によるInNバルク評価2010
- Author(s)
  金子昌充、山口智広、井村将隆、山下良之、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] TEMを用いたDERI法ドープInNの極微構造評価2010
- Author(s)
  坂本努、山口智広、岩本亮輔、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス長崎県長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010
- Author(s)
  J.Ibanez, A.Segura, F.J.Manjon, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
- Organizer
  2010 E-MRS Spring Meeting
- Place of Presentation
  Strasbourg France
- Year and Date
  2010-06-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Wet Etching Process for InN Device Fabrication2010
- Author(s)
  A.Miki, K.Morimoto, N.Maeda, T Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Wet etching by KOH for InN device fabrication2010
- Author(s)
  A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Evidence of Free Holes in Mg Doped InN2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
- Organizer
  Third International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価2010
- Author(s)
  名西〓之、山口智広、王科、荒木努、Euijoon Yoon
- Organizer
  応用物理学会九州支部学術講演会
- Place of Presentation
  九州大学伊都キャンパス福岡県福岡市
- Year and Date
  2010-11-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Free-Charge Carrier Properties and Doping Mechanisms of Thin Films of InN and Related Alloys2010
- Author(s)
  V. Darakchieva, M.Schubert, K.Lorenz, N.P.Barradas, E.Alves, T.Hofmann, B.Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.To, T.Yamaguchi, Y.Nanishi
- Organizer
  5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
- Place of Presentation
  Albany, New York USA
- Year and Date
  2010-05-27
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断2010
- Author(s)
  勝木拓郎、福本英太、山口智広、荒木努、名西〓之
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学三重県三重市
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] LiAlO_2(100)板上M面InN低温バッファ層利用に向けたM面GaN下地層の有効性2010
- Author(s)
  香川和明、山口智広、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Optical Hall Effect in InN : Bulk Doping Mechanism and Surface Electron Accumulation Properties2010
- Author(s)
  V.Darakchieva, M.Schubert, T.Hofmann, Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  PLCN10
- Place of Presentation
  Cuernavaca Mexico
- Year and Date
  2010-04-12
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Hydrogen in InN : Ubiquitous Phenomena in Molecular Beam Epitaxy Grown Material2010
- Author(s)
  V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.To, T.Yamaguchi, Y.Nanishi
- Organizer
  CIMTEC2010 (5th Forum on New Materials)
- Place of Presentation
  Montecatini Terme, Tuscany Italy
- Year and Date
  2010-06-16
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma2010
- Author(s)
  T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法を用いたInGaN成長と組成制御への試み2010
- Author(s)
  岩本亮輔、山口智広、上松尚、坂本務、藤嶌辰也、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Electronic Materials Conference 2010 (EMC2010)2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
- Organizer
  Electronic Materials Conference 2010 (EMC2010)
- Place of Presentation
  Notre Dame, Indiana, USA
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth, Monitoring and InN/InGaN MQW Structure Fabrication by DERI Method2010
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  IX International Conference of Polish Society for Crystal Growth
- Place of Presentation
  Gdansk-Sobieszewo Poland
- Year and Date
  2010-05-25
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE2010
- Author(s)
  T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
- Organizer
  The 16th International Conference on Crystal Growth (ICCG16)
- Place of Presentation
  Beijing China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法InGaN成長を用いた厚膜化への試み2010
- Author(s)
  上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス長崎県長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用2010
- Author(s)
  山口智広、荒木努、名西〓之
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学三重県三重市
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Florida, USA
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Various application of DERI (droplet elimination by radical-beam irradiation) method in growth of RF-MBE2010
- Author(s)
  T.Yamaguchi, H.Umeda, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] InGaN growth using droplet elimination by radical-beam irradiation method2010
- Author(s)
  T.Yamaguchi, K.Wang, T.Araki, E.Yoon, N.Yasushi
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE2010)
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-19
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure2010
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tokyo Univ Tokyo Japan
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 硬X線光電子分光によるInNバルク評価2010
- Author(s)
  金子昌充、山口智広、井村将隆、山下良之、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] LiA1O_2(100)基板上M面InN低温バッファ層利用に向けたM面GaN下地層の有効性2010
- Author(s)
  香川和明、山口智広、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] C面、A面、M面InNの表面化学状態の解析2010
- Author(s)
  高木俊樹、金子昌充、山口智広、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  タンパ(アメリカ)(基調講演)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] InNデバイス作製プロセスへのウエットエッチングの適用2010
- Author(s)
  三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] InNデバイス作製プロセスへのウエットエッチングの適用2010
- Author(s)
  三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
- Organizer
  2010年(平成22年)秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス長崎県長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, E.Yoon
- Organizer
  The second LED domestic conference
- Place of Presentation
  Seoul Korea
- Year and Date
  2010-08-25
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Adsorption and Desorption of Indium Adlayer on GaN Surface2010
- Author(s)
  王科、山口智広、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Wet Etching Process for InN Device Fabrication2010
- Author(s)
  A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Evidence of Free Holes in Mg Doped InN2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Wet Etching by KOH for InN Device Fabrication2010
- Author(s)
  A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EM529)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Adsorption and Desorption of Indium Adlayer on GaN Surface2010
- Author(s)
  王科、山口智広、荒木努、名西〓之
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth of InN and Related Alloys Using Droplet Elimination by Radical Beam Irradiation2009
- Author(s)
  山口智広, 名西〓之
- Organizer
  2009 E-MRS Fall Meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2009-09-15
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE Growth and Characterization of M-Plane InN on LiAlO2 with C-Plane Phase Inclusion2009
- Author(s)
  T.Araki, H.Nozawa, Y.Takagi, A.Takeda, T.Sakamoto, K.Kagawa, T.Yamaguchi, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Polarized Photoluminescence from Nonpolar InN Films2009
- Author(s)
  K.Wang, T.Yamaguchi, K.Kawashima, Y.Takagi, T.Araki, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Proposal of New RF-MBE Method Capable for Reproducible, High-Quality InN Growth2009
- Author(s)
  名西〓之, 山口智広
- Organizer
  17th American Conference on Crystal Growth and Epitaxy(ACCGE-17)
- Place of Presentation
  ウィスコンシン(アメリカ)
- Year and Date
  2009-08-13
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] V/III Ratiodependence on M-Plane InN Growth on LiAlO2(100) Substrates by RF-MBE2009
- Author(s)
  K.Kagawa, Y.Takagi, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium (EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] LiAlO_2基板上C面混在M面InN薄膜の構造評価2009
- Author(s)
  荒木努、野沢浩一、高木悠介、武藤大祐、山口智広、名西〓之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE Growth and Characterization of M-Plane InN on LiAIO2 with C-Plane Phase Inclusion2009
- Author(s)
  T.Araki, H.Nozawa, Y.Takagi, A.Takeda, T.Sakamoto, K.Kagawa, T.Yamaguchi, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] RF-MBE法によるr面(10-12)Sapphire 基板上InNの結晶成長2009
- Author(s)
  川島圭介、山口智広、荒木努、名西〓之
- Organizer
  平成21年電気関係学会関西支部連合大会
- Place of Presentation
  大阪大学(吹田市)
- Year and Date
  2009-11-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法を用いた高品質InN結晶成長-配列制御InNナノコラム成長について-2009
- Author(s)
  荒木努、山口智広、金子昌充、名西〓之
- Organizer
  2009年度電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  徳島大学(徳島市)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] CTLM法によるIn極性及びN極性の高品質InN薄膜へのコンタクト抵抗評価2009
- Author(s)
  森本健太、菊池将悟、前田就彦、山口智広、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Indium Incorporation Behavior in InGaN Growth by RF-MBE2009
- Author(s)
  山口智広, 荒木努, 名西〓之
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Raman Scattering by LO-Phonon-Plasmon Coupled Modes in InN Epilayers : Dependence on the Excitation Laser Intensity and Wavelength2009
- Author(s)
  R.Cusco, J.lbanez, E.Alarcon-Llado, T.Yamaguchi, Y.Nanishi, L.Artus
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  ボストン(アメリカ)
- Year and Date
  2009-12-01
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress and Challenges of InN and Related Alloys for Device Applications2009
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  33rd Workshop on Compound Semiconductor Devices and Integrated Circuits(WOCSDICE 2009)
- Place of Presentation
  マラガ(スペイン)
- Year and Date
  2009-05-18
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 低温InNバッファ層を用いた高品質A面(11-20)InNの結晶成長2009
- Author(s)
  川島圭介、山口智広、武藤大祐、荒木努、名西〓之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] InNへのMgドーピングにおける成長条件依存性2009
- Author(s)
  岩本亮輔、山口智広、荒木努、名西〓之
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  SPIE International Symposium on Integrated Optoelectronic Devices 2009
- Place of Presentation
  San Jose Convention Center(San Jose, USA)
- Year and Date
  2009-01-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] 極性及び無極性InNの表面電位評価2009
- Author(s)
  金子昌充、川島圭介、山口智広、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法により作製されたInNの光反射率その場観察2009
- Author(s)
  王科、山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Proposal of New RF-MBE Method Capable for Reproducible, High-Quality InN Growth2009
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  17th American Conference on Crystal Growth and Epitaxy(ACCGE-17)
- Place of Presentation
  ウィスコンシン(アメリカ)
- Year and Date
  2009-08-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] AlN/InNへテロ構造の作製と評価2009
- Author(s)
  奥村昌平、山口智広、武藤大祐、荒木努、名西〓之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Photoexcited Carriers in InN Layers Observed by Raman Scattering2009
- Author(s)
  R.Cusco.E.Alarcon-Llado, J.Ibanez, T.Yamaguchi, Y.Nanishi, L.Artus
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] New Reproducible MBE Growth method for High Quality InN and InGaN2009
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  Advanced Workshop on 'Frontiers in Electronics'(WOFE09)
- Place of Presentation
  リンコン(プエルトリコ)
- Year and Date
  2009-12-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] MBE法によるGaN加工基板上配列制御InNナノコラムの作製2009
- Author(s)
  片岡佳大、田宮秀敏、山口智広、三宅秀人、平松和政、荒木努、名西〓之
- Organizer
  第1回窒化物半導体結晶成長講演会(Post-ISGN2)
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  SPIE International Symposium on Integrated Optoelectronic Devices 2009
- Place of Presentation
  San Jose Convention Center (San Jose, USA)
- Year and Date
  2009-01-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法により作製されたInNの光反射率その場観察2009
- Author(s)
  王科、山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Proposal of New InN Growth Method by MBE and Usefulness of This Method as Nitrogen Radical Beam Monitoring2009
- Author(s)
  Y. Nanishi, T. Yamaguchi
- Organizer
  First International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2009)
- Place of Presentation
  Nagoya University
- Year and Date
  2009-03-10
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] RF-MBE InN成長におけるDERI法の有用性2009
- Author(s)
  山口智広、王科、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] New Reproducible MBE Growth method for High Quality InN and InGaN2009
- Author(s)
  名西〓之, 山口智広
- Organizer
  Advanced Workshop on 'Frontiers in Electronics'(WOFE 09)
- Place of Presentation
  リンコン(プエルトリコ)
- Year and Date
  2009-12-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] New MBE growth method for high quality InN and related alloys using in situ monitoring technology2009
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Organizer
  E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-12
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Al簿膜堆積によるC面InNの表面改質効果2009
- Author(s)
  高木俊樹、金子昌充、山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Indium Incorporation Behavior in InGaN Growth by RF-MBE2009
- Author(s)
  T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Proposal and Potential of Simple, Reproducible, Thick and High Quality InN Growth Method by MBE2009
- Author(s)
  名西〓之, 山口智広
- Organizer
  The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
- Place of Presentation
  張家界(中国)
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
- Place of Presentation
  張家界(中国)
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] カソードルミネッセンス法によるr面サファイア基板上InN薄膜の光学的評価2009
- Author(s)
  武田彰史、川島圭介、山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] CTLM法によるIn極性及びN極性の高品質InN簿膜綴へのコンタクト抵抗評価2009
- Author(s)
  森本健太、菊池将悟、前田就彦、山口智広、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Proposal of New InN Growth Method by MBE and Usefulness of This Method as Nitrogen Radical Beam Monitoring2009
- Author(s)
  Y. Nanishi and T. Yamaguchi
- Organizer
  First International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2009)
- Place of Presentation
  Nagoya University
- Year and Date
  2009-03-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Raman Scattering and Phonon-Plasmon Coupled Modes in InN : a Free-Electron Density Study2009
- Author(s)
  R.Cusco, E..Alarcon-Llado, J.Ibanez, T.Yamaguchi, Y.Nanishi, L.Artus
- Organizer
  E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
- Place of Presentation
  ストラスブルグ(フランス)
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法を用いたRF-MBE InN結晶成長と各種その場観察評価2009
- Author(s)
  山口智広、荒木努、王科、岩本亮輔、名西やすし
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  第1回窒化物半導体結晶成長講演会(Post-ISGN2)
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法を用いたInN/InGaN量子井戸構造の作製2009
- Author(s)
  梅田英知、山口智広、荒木努、名西〓之
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE InN成長におけるDERI法の有用性2009
- Author(s)
  山口智広、王科、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] KFMによるInN表面電位の直接評価2009
- Author(s)
  金子昌充, 山口智広, 名西〓之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] RF-MBE法における新規高品質InN結晶成長手法の提案とInGaN結晶成長への応用2009
- Author(s)
  山口智広、名西〓之
- Organizer
  2009年度電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  徳島大学(徳島市)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Simple and Reproducible Growth of High-Quality InN by DERI2009
- Author(s)
  T.Yamaguchi, R.Iwamoto, N.Maeda, T.Araki, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 段差AlGaN/GaN基板上へのInN再成長構造の作製と電気的特性評価2009
- Author(s)
  前田就彦, 山口智広, 菊池将悟, 廣木正伸, 名西〓之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Structural Characterization of M-Plane InN Grown on LiAIO2 Substrate with C-Plane Phase Inclusion2009
- Author(s)
  T.Araki, H.Nozawa, Y.Takagi, A.Takeda, K.Kagawa, T.Yamaguchi, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法を用いたInN/InGaN量子井戸構造の作製2009
- Author(s)
  梅田英知、山口智広、荒木努、名西〓之
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Raman Scattering and Phonon-Plasmon Coupled Modes in InN : a Free-Electron Density Study2009
- Author(s)
  R.Cusco, E., Alarcon-Llado, J.Ibanez, T.Yamaguchi, Y.Nanishi, L.Artus
- Organizer
  E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
- Place of Presentation
  ストラスブルグ(フランス)
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Present Status and New Challenges of Nitride Semiconductors for Advanced Electronic Devices2009
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  2009 E-MRS Fall Meeting
- Place of Presentation
  ワルシャワ(ポーランド)(招待講演)
- Year and Date
  2009-09-16
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Mg Doping of In-Rich InGaN Grown by RF-MBE2009
- Author(s)
  E.Fukumoto, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Evaluation of Surface Fermi Level of MBE-Grown InN by Kelvin-Probe Force Microscopy2009
- Author(s)
  金子昌充, 山口智広, 名西〓之
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Evaluation of Surface Fermi Level of MBE-Grown InN by Kelvin-Probe Force Microscopy2009
- Author(s)
  M.Kaneko, T.Yamaguchi, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Potential and Challenges of InN and Related Alloys for Advanced Electronic Devices2009
- Author(s)
  Y.Nanishi, N.Maeda, T.Yamaguchi, M.Kaneko
- Organizer
  67th Device Research Conference
- Place of Presentation
  ペンシルバニア(アメリカ)
- Year and Date
  2009-06-23
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法を用いたメタルリッチ条件下でのInGaN成長2009
- Author(s)
  山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Characterization of Metal Contact Resistance Using Al, Ti, and Ni on High-Quality InN Films Grown by RF-MBE2009
- Author(s)
  S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] RF-MBE InN成長におけるDERI法の有用性2009
- Author(s)
  山口智広、王科、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Plarized Photoluminescence from Polar and Nonpolar InN Films2009
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] カソードルミネッセンス法によるr面サファイア基板上InN薄膜の光学的評価2009
- Author(s)
  武田彰史、川島圭介、山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Plarized Photoluminescence from Polar and Nonpolar InN Films2009
- Author(s)
  王科, 山口智広, 荒木努, 名西〓之
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 低温InNバッファ層を用いた高品質A面(11-20)InNの結晶成長2009
- Author(s)
  川島圭介, 山口智広, 武藤大祐, 荒木努, 名西〓之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Structural Characterization of M-Plane InN Grown on LiAlO2 Substrate with C-Plane Phase Inclusion2009
- Author(s)
  T.Araki, H.Nozawa, Y.Takagi, A.Takeda, K.Kagawa, T.Yamaguchi, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] DERI法を用いたRF-MBE InN結晶成長と各種その場観察評価2009
- Author(s)
  山口智広、荒木努、王科、岩本亮輔、名西〓之
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] InNナノウォールの作製と評価2009
- Author(s)
  片岡佳大、岩本亮輔、山口智広、三宅秀人、平松和政、荒木努、名西〓之
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Polarized Photoluminescence from Nonpolar InN Films2009
- Author(s)
  K.Wang, T.Yamaguchi, K.Kawashima, Y.Takagi, T.Araki, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] RF-MBE法における新規高品質InN結晶成長手法の提案とInGaN結晶成長への応用2009
- Author(s)
  山口智広、名西やすし
- Organizer
  2009年度電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  徳島大学(徳島市)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Photoexcited Carriers in InN Layers Observed by Raman Scattering2009
- Author(s)
  R.Cusco, E.Alarcon-Llado, J.Ibanez, T.Yamaguchi, Y.Nanishi, L.Artus
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Droplet Elimination Process by Radical Beam Irradiation for the Growth of InN-based III-nitrides2009
- Author(s)
  山口智広, 名西〓之
- Organizer
  Satellite Workshop on Nitride Semiconductors
- Place of Presentation
  ソウル(韓国)
- Year and Date
  2009-10-26
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Raman Scattering by LO-Phonon-Plasmon Coupled Modes in InN Epilayers : Dependence on the Excitation Laser Intensity and Wavelength2009
- Author(s)
  R.Cusco, J.Ibanez, E.Alarcon-Llado, T.Yamaguchi, Y.Nanishi, L.Artus
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  ボストン(アメリカ)
- Year and Date
  2009-12-01
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] LiAlO_2基板上C面混在M面InN薄膜の構造評価2009
- Author(s)
  荒木努, 野沢浩一, 高木悠介, 武藤大祐, 山口智広, 名西〓之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2009
- Author(s)
  山口智広, 名西〓之
- Organizer
  E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
- Place of Presentation
  ストラスブルグ(フランス)
- Year and Date
  2009-06-12
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Indium Incorporation Behavior in InGaN Growth by RF-MBE2009
- Author(s)
  山口智広, 荒木努, 名西〓之
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法によるr面(10-12)Sapphire基板上InNの結晶成長2009
- Author(s)
  川島圭介、山口智広、荒木努、名西〓之
- Organizer
  平成21年電気関係学会関西支部連合大会
- Place of Presentation
  大阪大学(吹田市)
- Year and Date
  2009-11-07
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] InNへのMgドーピングにおける成長条件依存性2009
- Author(s)
  岩本亮輔、山口智広、荒木努、名西〓之
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 極性及び無極性InNの表面電位評価2009
- Author(s)
  金子昌充、川島圭介、山口智広、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Characterization of Contact Resistance of Al, Ti, and Ni in High-Quality InN Films grown by RF-MBE2009
- Author(s)
  菊池将悟, 前田就彦, 山口智広, 名西〓之
- Organizer
  Electronic Materials Conference 2009(EMC2009)
- Place of Presentation
  ペンシルバニア(アメリカ)
- Year and Date
  2009-06-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法を用いた高品質InN結晶成長-配列制御InNナノコラム成長について-2009
- Author(s)
  荒木努、山口智広、金子昌充、名西〓之
- Organizer
  2009年度電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  徳島大学(徳島市)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Simple and Reproducible Growth of High-Quality InN by DERI2009
- Author(s)
  T.Yamaguchi, R.Iwamoto, N.Maeda, T.Araki, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Observation of Surface Potential on Polar and Nonpolar InN by Kelvin-Probe Force Microscopy2009
- Author(s)
  M.Kaneko, Y.Takagi, K.Kawashima, T.Yamaguchi, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth of InN and Related Alloys Using Droplet Elimination by Radical Beam Irradiation2009
- Author(s)
  山口智広, 名西〓之
- Organizer
  2009 E-MRS Fall Meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2009-09-15
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Proposal and Potential of Simple, Reproducible, Thick and High Quality InN Growth Method by MBE2009
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
- Place of Presentation
  張家界(中国)
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Characterization of Metal Contact Resistance Using At, Ti, and Ni on High-Quality InN Films Grown by RF-MBE2009
- Author(s)
  菊池将悟, 前田就彦, 山口智広, 名西〓之
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2009
- Author(s)
  山口智広, 名西〓之
- Organizer
  E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
- Place of Presentation
  ストラスブルグ(フランス)
- Year and Date
  2009-06-12
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] InNナノウォールの作製と評価2009
- Author(s)
  片岡佳大、岩本亮輔、山口智広、三宅秀人、平松和政、荒木努、名西〓之
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Simple and Reproducible Growth of High-Quality InN by DERI2009
- Author(s)
  T.Yamaguchi, R.Iwamoto, N.Maeda, T.Araki, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Proposal of Droplet Elimination Process by Radical Beam Irradiation for Reproducible Growth of High-quality InN and InGaN2009
- Author(s)
  T.Yamaguchi, A.Uedono, T.Suski, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-21760237
[Presentation] Proposal of Droplet Elimination Process by Radical Beam Irradiation for Reproducible Growth of High-quality InN and InGaN2009
- Author(s)
  T.Yamaguchi, A.Uedono, T.Suski, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Observation of Surface Potential on Polar and Nonpolar InN by Kelvin-Probe Force Microscopy2009
- Author(s)
  M.Kaneko, Y.Takagi, K.Kawashima, T.Yamaguchi, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Proposal of Droplet Elimination Process by Radical Beam Irradiation for Reproducible Growth of High-quality InN and InGaN2009
- Author(s)
  T.Yamaguchi, A.Uedono, T.Suski, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] RF-MBE法における新規高品質InN結晶成長手法の提案とInGaN結晶成長への応用2009
- Author(s)
  山口智広、名西やすし
- Organizer
  2009年度電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  徳島大学(徳島市)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Mg Doping of In-Rich InGaN Grown by RF-MBE2009
- Author(s)
  福本英太, 山口智広, 荒木努, 名西〓之
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 高品質InN上薄膜AIN成長構造の作成と電気的特性の評価2009
- Author(s)
  菊池将悟、山口智広、前田就彦、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] RF-MBE法を用いたLiA1O_2(100)基板上へのInNの結晶成長2009
- Author(s)
  香川和明、高木悠介、山口智広、荒木努、名西〓之
- Organizer
  平成21年電気関係学会関西支部連合大会
- Place of Presentation
  大阪大学(吹田市)
- Year and Date
  2009-11-07
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Recent Progress and Challenges of InN and Related Alloys for Device Applications2009
- Author(s)
  名西〓之, 山口智広
- Organizer
  33rd Workshop on Compound Semiconductor Devices and Integrated Circuits(WOCSDICE 2009)
- Place of Presentation
  マラガ(スペイン)
- Year and Date
  2009-05-18
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法を用いたLiAlO_2(100)基板上へのInNの結晶成長2009
- Author(s)
  香川和明、高木悠介、山口智広、荒木努、名西〓之
- Organizer
  平成21年電気関係学会関西支部連合大会
- Place of Presentation
  大阪大学(吹田市)
- Year and Date
  2009-11-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
- Place of Presentation
  張家界(中国)
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] CTLM法によるAl, Ti, Ni, のInNへのコンタクト抵抗評価2009
- Author(s)
  菊池将悟、前田就彦、山口智広、名西やす之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-21
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Characterization of Contact Resistance of Al, Ti, and Ni in High-Quality InN Films grown by RF-MBE2009
- Author(s)
  S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
- Organizer
  Electronic Materials Conference 2009(EMC2009)
- Place of Presentation
  ペンシルバニア(アメリカ)
- Year and Date
  2009-06-26
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  第1回窒化物半導体結晶成長講演会(POSt-ISGN2)
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] AlN/InNヘテロ構造の作製と評価2009
- Author(s)
  奥村昌平、山口智広、武藤大祐、荒木努、名西やす之
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Growth of InN and Related Alloys Using Droplet Elimination by Radical Beam Irradiation2009
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  2009 E-MRS Fall Meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2009-09-15
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] A1薄膜堆積によるC面InNの表面改質効果2009
- Author(s)
  高木俊樹、金子昌充、山口智広、荒木努、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 高品質InN上薄膜AlN成長構造の作成と電気的特性の評価2009
- Author(s)
  菊池将悟、山口智広、前田就彦、名西〓之
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Proposal of New RF-MBE Growth Method for Reproducible and High-Quality InN and InGaN2009
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  15th Semiconducting and Insulating Materials Conference(SIMC-15)
- Place of Presentation
  ヴィリニュス(リトアニア)
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI法を用いたRF-MBE InN結晶成長と各種その場観察評価2009
- Author(s)
  山口智広、荒木努、王科、岩本亮輔、名西やすし
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential and Challenges of InN and Related Alloys for Advanced Electronic Devices2009
- Author(s)
  Y.Nanishi, N.Maeda, T.Yamaguchi, M.Kaneko
- Organizer
  67th Device Research Conference
- Place of Presentation
  ペンシルバニア(アメリカ)
- Year and Date
  2009-06-23
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] V/III Ratiodependence on M-Plane InN Growth on LiAlO2(100)Substrates by RF-MBE2009
- Author(s)
  香川和明, 高木悠介, 山口智広, 荒木努, 名西〓之
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] MBE法によるGaN加工基板上配列制御InNナノコラムの作製2009
- Author(s)
  片岡佳大、田宮秀敏、山口智広、三宅秀人、平松和政、荒木努、名西〓之
- Organizer
  第1回窒化物半導体結晶成長講演会(Post-ISGN2)
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Proposal of New RF-MBE Growth Method for Reproducible and High-Quality InN and InGaN2009
- Author(s)
  名西〓之, 山口智広
- Organizer
  15th Semiconducting and Insulating Materials Conference(SIMC-15)
- Place of Presentation
  ヴィリニュス(リトアニア)
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2009
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
- Place of Presentation
  ストラスブルグ(フランス)
- Year and Date
  2009-06-12
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Study on Initial Growth Process of Position-Controlled InN Nanocolumns by ECR-MBE2008
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  The Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Laforet Shuzenji(静岡県)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress of InN and InGaN Growth for Device Applications2008
- Author(s)
  Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] X線光電子分光法によるMgドープInNの表面評価2008
- Author(s)
  緩利友晶紀、野田光彦、武藤大祐、山口智広、金子昌充、荒木努、名西〓之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited), International Conference on Optical2008
- Author(s)
  Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
- Organizer
  Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
- Place of Presentation
  Edmonton, Canada
- Year and Date
  2008-07-23
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] TEMを用いたN極性MgドープInNの極微構造評価2008
- Author(s)
  野沢浩一、春井聡、武藤大祐、山口智広、荒木努、名西〓之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法を用いたLiAlO_2基板上無極性M面InNの結晶成長および構造評価2008
- Author(s)
  高木悠介、野沢浩一、山口智広、荒木努、名西〓之
- Organizer
  電子情報通信学会
- Place of Presentation
  名古屋工業大学(名古屋市)
- Year and Date
  2008-11-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
- Organizer
  International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA 08)
- Place of Presentation
  University of ALBERTA (EDMONTON, CANADA)
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and structura investigation of high-In-com Position InGaN/GaN Nanostructure2008
- Author(s)
  T.Yamaguchi, A.Pretorius, A.Rosenauer, D.Hommel, T.Araki, and Y.Nanishi
- Organizer
  Workshop on Frontie Photonic and Electronic Materials and Devices-2008 JaPanese-German-SPanishpoint Workshop-
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-05
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] CTLM法によるInNオーミックコンタクト抵抗の評価2008
- Author(s)
  菊池将悟, 佐藤丈, 檜木啓宏, 山口智広, 前田就彦, 荒木努, 名西〓之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(春日井市)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] LiAIO_2(100)基板上MgドープM面(10-10)lnNの結晶成長2008
- Author(s)
  高木悠介, 武藤大祐, 山口智広, 荒木努, 名西〓之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(春日井市)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Growth of M-plane(10-10) InN on LiAlO_2 (100) Substrate2008
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzeland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE2008
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzerland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Novel InN growth method under In-rich condition on GaN/Al2O3(0001) templates2008
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzerland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth of Position-Controlled InN Nanocolumns by ECR-MBE on Hole-Pattemed GaN Template2008
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  27th Electronic Materials Symposium (EMS27)
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Growth and characterization of N-polar and In-polar InN films by RF-MBE2008
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, and Y. Nanishi
- Organizer
  The Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Laforet Shuzenji(静岡県)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法を用いた高In組成In GaNに対するMg dopingの検討2008
- Author(s)
  福本英太、澤田慎也、武藤大祐、山口智広、荒木努、名西〓之
- Organizer
  第38回結晶成長国内会議(NCCG-38)
- Place of Presentation
  仙台市戦災復興記念館(仙台市)
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] GaN and InN intermixing during RF-MBE growth observed by XRD2008
- Author(s)
  D. Muto, T. Yamaguchi, S. Sawada, T. Araki, and Y. Nanishi
- Organizer
  2008Electronic Materials Conference
- Place of Presentation
  University of California (Santa Barbara, USA)
- Year and Date
  2008-06-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate2008
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzerland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] CTLM法によるInNオーミックコンタクト抵抗の評価2008
- Author(s)
  菊池将悟、佐藤丈、檜木啓宏、山口智広、前田就彦、荒木努、名西やす之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] GaN/InN界面におけるInとGaのインターミキシング2008
- Author(s)
  武藤大祐、山口智広、澤田慎也、荒木努、名西憾之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications2008
- Author(s)
  Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
- Organizer
  International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
- Place of Presentation
  Edmonton, Canada
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and characterization of N-polar and In-polar InN films by RF-MBE2008
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, Y. Nanishi
- Organizer
  The Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Laforet Shuzenji (Japan)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] M面(10-10)InN結晶成長および電気的特性の評価2008
- Author(s)
  高木悠介、野田光彦、武藤大祐、山口智広、荒木努、名西〓之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] X線光電子分光法によるMgドープInNの表面評価2008
- Author(s)
  緩利友晶紀、野田光彦、武藤大祐、山口智広、金子昌充、荒木努、名西憾之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Recent Progress of InN and In GaN Growth for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] A面(11-20) InNに対するMgドーピングの効果2008
- Author(s)
  野田光彦、武藤大祐、山口智広、荒木努、名西〓之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] GaN/InNヘテロ構造の成長と評価2008
- Author(s)
  武藤大祐, 山口智広, 荒木努, 名西〓之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(春日井市)
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] LiAlO_2(100)基板上MgドープM面(10-10)InNの結晶成長2008
- Author(s)
  高木悠介、武藤大祐、山口智広、荒木努、名西〓之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(春日井市)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] M面(10-10) InN結晶成長および電気的特性の評価2008
- Author(s)
  高木悠介、野田光彦、武藤大祐、山口智広、荒木努、名西憾之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] TEMを用いたN極性MgドープInNの極微構造評価2008
- Author(s)
  野沢浩一、春井聡、武藤大祐、山口智広、荒木努、名西憾之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Recent Progress of InN and InGaN Growth for Device Applications2008
- Author(s)
  Y.Nanishi, T.Araki, T.Yamaguchi, D.Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  モントルー(スイス)(招待講演)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法によるR面(10-12)Sapphire基板上、半極性面InNの結晶成長2008
- Author(s)
  中谷佳津彦、川島圭介、山口智広、武藤大祐、荒木努、名西〓之
- Organizer
  電気関係学会関西支部連合大会
- Place of Presentation
  京都工芸繊維大学
- Year and Date
  2008-11-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法を用いたLiAlO_2基板上無極性M面InNの結晶成長および構造評価2008
- Author(s)
  高木悠介, 野沢浩一, 山口智広, 荒木努, 名西〓之
- Organizer
  電子情報通信学会
- Place of Presentation
  名古屋工業大学(名古屋市)
- Year and Date
  2008-11-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Recent Progress of InN and InGaN Growth for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzeland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Study on Initial Growth Process of Position-Controlled InN Nanocolumns by ECR-MBE2008
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  The Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Laforet Shuzenji (Japan)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] GaN/InNヘテロ構造の成長と評価2008
- Author(s)
  武藤大祐、山口智広、荒木努、名西〓之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(春日井市)
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress of InN and InGaN Growth for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzerland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] GaN/InN界面におけるInとGaのインターミキシング2008
- Author(s)
  武藤大祐、山口智広、澤田慎也、荒木努、名西やす之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] GaN/InNヘテロ構造の成長と評価2008
- Author(s)
  武藤大祐、山口智広、荒木努、名西やす之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] RF-MBE法を用いた高In組成In GaNに対するMg dopingの検討2008
- Author(s)
  福本英太、澤田慎也、武藤大祐、山口智広、荒木努、名西やす之
- Organizer
  第38回結晶成長国内会議(NCCG-38)
- Place of Presentation
  仙台市戦災復興記念館
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] GaN/InN界面におけるInとGaのインターミキシング2008
- Author(s)
  武藤大祐、山口智広、澤田慎也、荒木努、名西〓之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] GaNテンプレート上InN成長におけるRHEEDその場観察法を用いた実効的V/III比制御2008
- Author(s)
  山口智広、野沢浩一、武藤大祐、荒木努、前田就彦、名西〓之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(春日井市)
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法を用いた高In組成InGaNに対するMg dopingの検討2008
- Author(s)
  福本英太, 澤田慎也, 武藤大祐, 山口智広, 荒木努, 名西〓之
- Organizer
  第38回結晶成長国内会議(NCCG-38)
- Place of Presentation
  仙台市戦災復興記念館(仙台市)
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE2008
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzeland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] TEMを用いたM面(10-10)InNの極微構造評価2008
- Author(s)
  野沢浩一, 高木悠介, 春井聡, 武藤大祐, 山口智広, 荒木努, 名西〓之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(春日井市)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] TEMを用いたM面(10-10)InNの極微構造評価2008
- Author(s)
  野沢浩一、高木悠介、春井聡、武藤大祐、山口智広、荒木努、名西〓之
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学(春日井市)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] A面 (11-20) InNに対するMgドーピングの効果2008
- Author(s)
  野田光彦、武藤大祐、山口智広、荒木努、名西憾之
- Organizer
  2008年(平成20年)春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Growth of Position-Controlled InN Nanocolumns by ECR-MBE on Hole-Patterned GaN Template2008
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  27th Electronic Materials Symposium (EMS27)
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and structural investigation of high-In-composition InGaN/GaN Nanostructures2008
- Author(s)
  T. Yamaguchi, A. Pretorius, A. Rosenauer, D. Hommel, T. Araki, and Y. Nanishi
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices -2008 Japanese-German-Spanish joint Workshop-
- Place of Presentation
  The Prince Hakone (Hakone, Japan)
- Year and Date
  2008-03-05
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
- Organizer
  International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
- Place of Presentation
  University of ALBERTA (EDMONTON, CANADA)
- Year and Date
  2008-07-23
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] RF-MBE法によるR面(10-12)Sapphire基板上、半極性面InNの結晶成長2008
- Author(s)
  中谷佳津彦, 川島圭介, 山口智広, 武藤大祐, 荒木努, 名西〓之
- Organizer
  電気関係学会関西支部連合大会
- Place of Presentation
  京都工芸繊維大学
- Year and Date
  2008-11-09
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] RF-MBE法による(100)LiAIO2基板上M面(10-10)InNの結晶成長2007
- Author(s)
  高木悠介、野田光彦、武藤大祐、山口智広、荒木努、名西憾之
- Organizer
  第37回結晶成長国内会議(NCCG-37)
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2007-11-07
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] MgドープA面(11-20)InNの結晶成長と電気的特性評価2007
- Author(s)
  野田光彦、武藤大祐、山口智広、荒木努、名西〓之
- Organizer
  第37回結晶成長国内会議(NCCG-37)
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2007-11-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] MgドープA面 (11-20)InNの結晶成長と電気的特性評価2007
- Author(s)
  野田光彦、武藤大祐、山口智広、荒木努、名西憾之
- Organizer
  第37回結晶成長国内会議(NCCG-37)
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2007-11-07
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Fabrication of patterned InN nano-columns by ECR-MBE2007
- Author(s)
  T.Araki, T.Yamaguchi, S.Harui, H.Miyake, K.Hiramatsu, Y.Nanishi
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL(Las Vegas,USA)
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] ECV方を用いたA面InNの表面電荷蓄積層の評価2007
- Author(s)
  野田光彦、武藤大祐、武藤大祐、K.M.Yu, R.E.Jones, W.Walikiewicz, 山口智広、荒木努、名西憾之
- Organizer
  2007年 (平成19年) 秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] 水素・窒素混合プラズマ照射によるInNの表面エッチングに関する検討2007
- Author(s)
  和田伸之、澤田慎也、山口智弘、荒木努、名西憾之
- Organizer
  2007年 (平成19年) 秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] ECR-MBE法を用いた加工GaN基板上の配列制御したInNナノコラム成長2007
- Author(s)
  田宮秀敏、春井聡、山口泰平、赤木孝信、三宅秀人、平松和政、荒木努、名西憾之
- Organizer
  2007年 (平成19年) 秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] P形MgドープInNの結晶成長とその電気的特性評価2007
- Author(s)
  武藤大祐、野田光彦、K. M. Yu, J. W. Ager, W. Walukiewicz, 山口智広、荒木努、名西〓之
- Organizer
  2007年(平成19年)秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE法による(100)LiAIO_2基板上M面(10-10)InNの結晶成長2007
- Author(s)
  高木悠介、野田光彦、武藤大祐、山口智広、荒木努、名西〓之
- Organizer
  第37回結晶成長国内会議(NCCG-37)
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2007-11-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth of InN hexagonal pyramids on hole-patterned GaN templates by ECR-MBE2007
- Author(s)
  D. Fukuoka, T. Yamaguchi, S. Harui, T. Akagi, K. Hiramatsu, H. Miyake, H. Naoi, T. Araki, and Y. Nanishi
- Organizer
  International Conference on Crystal Growth(ICCG15)
- Place of Presentation
  Grand America and Little America hotels(Salt Lake City, USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 水素・窒素混合プラズマ照射によるInNの表面エッチングに関する検討2007
- Author(s)
  和田伸之、澤田慎也、山口智弘、荒木努、名西〓之
- Organizer
  2007年(平成19年)秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Fabrication of patterned InN nano-columns by ECR-MBE2007
- Author(s)
  T. Araki, T. Yamaguchi, S. Harui, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL (Las Vegas, USA)
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growthof InN hexagonal pyramids on hole-patterned GaN templates by ECR-MBE2007
- Author(s)
  D.Fukuoka, T.Yamaguchi, S.Harui, T.Akagi, K.Hiramatsu, H.Miyake, H.Naoi, T.Araki, and Y.Nanishi
- Organizer
  International Conference on Crystal Growth (ICCG15)
- Place of Presentation
  Grand America and Little America hotels(SaltLake City,USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] P形MgドープInNの結晶成長とその電気的特性評価2007
- Author(s)
  武藤大祐、野田光彦、K.M.Yu, J.W.Agerm, W.Walukiewicz, 山口智広、荒木努、名西憾之
- Organizer
  2007年 (平成19年) 秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] ECR-MBE法を用いた加工GaN基板上の配列制御したInNナノコラム成長2007
- Author(s)
  田宮秀敏、春井聡、山口泰平、赤木孝信、三宅秀人、平松和政、荒木努、名西〓之
- Organizer
  2007年(平成19年)秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] ECV方を用いたA面InNの表面電荷蓄積層の評価2007
- Author(s)
  野田光彦、武藤大祐、K. M. Yu, R. E. Jones, W. Walikiewicz, 山口智広、荒木努、名西〓之
- Organizer
  2007年(平成19年)秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Injection-activated defect-governed recombination rate in InN
- Author(s)
  S. Nargelas, K. Jarasiunas, M. Vengris, T. Yamaguchi, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Angled-resolved XPS measurements of InN films grown by RF-MBE
- Author(s)
  R. Amiya, T. Yamaguchi, D. Tajimi, M. Hayashi, Y. Sugiura, T. Honda, T. Araki and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering
- Author(s)
  R. J. Jimenez, N. Domenech-Amador, R. Cusco, C. Prieto, T. Yamaguchi, Y. Nanishi, and L. Artus,
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN2012)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Frontier Research of Nitride Semiconductors toward Longer Wavelength and Higher Speed
- Author(s)
  Y. Nanishi, T.Yamaguchi, K.Wang, T.Araki and E. Yoon
- Organizer
  2nd Solid-State Systems Symposium; VLSIs and Semiconductor Related Technologies (4S-2012)
- Place of Presentation
  Ho Chi Minh City, Vietnam
- Invited
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth and doping of In-based nitride semiconductors using DERI method
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
- Organizer
  The 2015 Materials Challenges in Alternative and Renewable Energy Conference (MCARE 2015)
- Place of Presentation
  LOTTE Hotel, Jeju, Korea
- Year and Date
  2015-02-24 – 2015-02-27
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Influence of Surface Oxides for Band Bending of N-Type GaN
- Author(s)
  Y. Sugiura, R. Amiya, D. Isono, T. Yamaguchi and T. Honda
- Organizer
  5th International Symposium on Growth of III-Nitrides (ISGN-5)
- Place of Presentation
  The Westin, Peachtree Plaza, Atlanta, Georgia, USA
- Year and Date
  2014-05-18 – 2014-05-22
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] ミストCVD法を用いたGaN基板上へのGa2O3成長
- Author(s)
  多次見大樹、奥秋良隆、畠山匠、金子健太郎、藤田静雄、尾沼猛儀、山口智広、本田徹
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBE Growth of InGaN Ternally Alloys: Advantage of DERI method
- Author(s)
  T. Yamaguchi, K. Wang, T. Honda, E. Yoon, T. Araki, Y. Nanishi
- Organizer
  The 16th Canadian Semiconductor Science　and Technology Conference (CSSTC2013)
- Place of Presentation
  Thunder Bay, Canada
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBE Growth and Characterization of GaN　Films on alpha-Ga203/Sapphire Template
- Author(s)
  T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y.　Sugiura, T. Honda
- Organizer
  10th International　Conference on Nitride　Semiconductors 2013　(ICNS-10)
- Place of Presentation
  Washington D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] β-Ga2O3結晶の透過と反射スペクトルの偏光依存性
- Author(s)
  尾沼猛儀, 齋藤伸吾, 佐々木公平, 増井建和, 山口智広, 本田徹, 東脇正高
- Organizer
  第62回応用物理学会春季講演会
- Place of Presentation
  東海大学湘南キャンパス, 秦野, 神奈川
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Mist Chemical Vapor Deposition Growth of Ga2O3, In2O3 and Their Alloys
- Author(s)
  T. Yamaguchi, K. Tanuma, T. Hatakeyama, T. Onuma and T. Honda
- Organizer
  he 41st International Symposium on Compound Semiconductor (ISCS 2014)
- Place of Presentation
  Le Column, Montpellier, France
- Year and Date
  2014-05-11 – 2014-05-14
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Characterization of Dark Spots on GaInN Films by Using Fluorescence Microscope and Secondary Ion Mass Spectroscopy
- Author(s)
  N. Toyomitsu, L. Sang, T. Yamaguchi, T. Honda and M. Sumiya
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA’14)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 疑似Al基板上GaN薄膜のフォトルミネッセンス評価
- Author(s)
  渡邉悠斗, 大澤真弥, 尾沼猛儀, 山口智広, 本田徹
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Progress in InGaN growth by RF-MBE and development to optical device fabrication
- Author(s)
  T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
- Organizer
  SPIE Photonic West 2015
- Place of Presentation
  The Moscone Center, San Francisco, CA, USA
- Year and Date
  2015-02-13 – 2015-02-18
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Impact of perfection on one-monolayer thick InN in hexagonal GaN
- Author(s)
  N. Watanabe, D. Tajimi, T. Onuma, N. Hashimoto, K. Kusakabe, K. Wang, A. Yoshikawa, T. Yamaguchi and T. Honda
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Shizuoka, Japan
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 分子プレカーサー法によるZnO薄膜製作のための熱処理温度の検討
- Author(s)
  後藤良介, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] T-dependence of local vibrational modes of Mg-H complexes in InN:Mg
- Author(s)
  R. Cusco, N. Domenech-Amador, L. Artus, K. Wang, T. Yamaguchi, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] DERI Method; Possible Approach to Green, Red and IR Light Emitters Based on Nitride Semiconductors
- Author(s)
  Y. Nanishi, T. Yamaguchi, T. Araki and E. Yoon
- Organizer
  SPIE Photonics West 2014
- Place of Presentation
  San Francisco, U.S.A.
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth of α-Ga2O3 on α-Al2O3 substrate by mist CVD and growth of GaN on α -Ga2O3 buffer layer by RF-MBE
- Author(s)
  T. Yamaguchi, T. Hatakeyama, Y. Sugiura, T. Onuma and T. Honda
- Organizer
  18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
- Place of Presentation
  High Country conference center Flagstaff, Arizona, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] In-situ MBE法を用いたAlOx/AlN/GaNヘテロ構造の製作
- Author(s)
  杉浦洋平, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] AlOx/AlNヘテロ構造の発光特性
- Author(s)
  尾沼猛儀, 杉浦洋平, 山口智広, 本田徹, 東脇正高
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Effect of Pseudo Aluminum Templates in RF-MBE Growth of GaN on 4H-SiC
- Author(s)
  Y. Watanabe, S. Osawa, D. Tajimi, T. Yamaguchi, and T. Honda
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA’14)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth and characterization of Ga-In-O by mist CVD
- Author(s)
  K. Tanuma, T. Hatakeyama, R. Goto, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The 13th International Symposium on Advanced Technology (ISAT-13)
- Place of Presentation
  Danang, Vietnam
- Year and Date
  2014-11-13 – 2014-11-16
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] GaInNのRF-MBE成長とpn ホモ接合型青緑色LEDの製作
- Author(s)
  鳴谷建人，山口智広，Ke Wang，荒木努，名西やすし，Liwen Sang，角谷正友，藤岡秀平，尾沼猛儀，本田徹
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Angled-resolved XPS measurements of In-polar and N-polar InN films
- Author(s)
  R. Amiya, T. Yamaguchi, D. Tajimi, M. Hayashi, Y. Sugiura, T. Honda, T. Araki, and Y. Nanishi
- Organizer
  31st　Electronic Materials Symposium (EMS31)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Investigation of near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction
- Author(s)
  A. L. Yang, Y. Yamashita, M. Kobata, T. Matsushita, H. Yoshikawa, I. Pis, M. Imura, T. Yamaguchi, O. Sakata, Y. Nanishi, and K. Kobayashi
- Organizer
  The 6th International Conference on the Science and Technology for Advanced Ceramics (STAC-6)
- Place of Presentation
  メルパルク横浜　神奈川県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Ga2O3上GaN成長とGaN上Ga2O3成長
- Author(s)
  山口智広、畠山匠、多次見大樹、尾沼猛儀、本田徹
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] DERI法を用いたInGaN系量子ナノ構造のRF-MBE成長
- Author(s)
  荒木努、上松尚、阪口順一、王科、山口智広、Euijoon Yoon、名西やす之
- Organizer
  2012年度電子情報通信学会　レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪市立大学, 大阪府
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] ミストCVDによるα-(AlGa)2O3混晶成長の基礎検討- α-Ga2O3と比較したα-Al2O3の成長速度の検討
- Author(s)
  高橋幹夫, 畠山匠, 尾沼猛儀, 山口智広, 本田徹
- Organizer
  第62回応用物理学会春季講演会
- Place of Presentation
  東海大学湘南キャンパス, 秦野, 神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth of InGaN-based heterostructures using DERI by RF-MBE
- Author(s)
  T. Araki, N. Uematsu, J. Sakaguchi, K. Wang, T. Yamaguchi, E. Yoon, Yasushi Nanishi
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学城北地区/松山大学文京キャンパス、愛媛県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] InN および　In-rich InGaN をベースとした窒化物半導体による長波長発光デバイス開発への挑戦
- Author(s)
  名西やすし、山口智広、荒木努
- Organizer
  LED総合フォーラム2013in徳島
- Place of Presentation
  徳島
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Polarity determination of InN films by hard X-ray photoelectron diffraction
- Author(s)
  楊　安麗, 山下良之, 小畠雅明, 松下智裕, 吉川英樹, Pis Igor, 山口智広, 坂田修身, 名西やすし, 小林啓介
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学城北地区/松山大学文京キャンパス、愛媛県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Properties of near-UV transparent Ga-In-O electrode in GaN-ased MOS-LED
- Author(s)
  S. Fujioka, T. Yasuno, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-14 – 2014-12-19
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Fabrication of copper thin films using the solution based method
- Author(s)
  H. Nagai, T. Nakano, S. Mita, T. Yamaguchi, I. Takano, T. Honda and M. Sato
- Organizer
  Third International Conference on Materials Energy and Environments (ICMEE 2014)
- Place of Presentation
  Honolulu, Hawaii, USA
- Year and Date
  2014-07-02 – 2014-07-05
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth of InGaN/InGaN MQW structures using DERI by RF-MBE
- Author(s)
  T. Araki, N. Uematsu, K. Wang, T. Yamaguchi, E. Yoon and Y. Nanishi
- Organizer
  The Electronic Materials Conference　2012（EMC2012）
- Place of Presentation
  State College, USA
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 表面酸化物によるGaN表面フェルミ準位に及ぼす影響
- Author(s)
  網谷良介、多次見大樹、杉浦洋平、山口智広、本田徹
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第５回　窒化物半導体結晶成長講演会
- Place of Presentation
  大阪
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] X-ray photoelectron spectroscopy of C+, C- and M-GaN surfaces
- Author(s)
  D. Isono, Y. Sugiura, T. Yamaguchi and T. Honda
- Organizer
  The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  Kogakuin University, Tokyo, Japan
- Year and Date
  2014-11-01 – 2014-11-02
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth
- Author(s)
  T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi
- Organizer
  SPIE Photonics West 2013
- Place of Presentation
  San Francisco, California, USA
- Invited
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of pn-GaInN structures by RF-MBE and fabrication of homojunction-type light emitting diodes
- Author(s)
  K. Narutani, T. Yamaguchi, K. Wang, T Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
- Organizer
  18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
- Place of Presentation
  High Country conference center Flagstaff, Arizona, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Surface and Bulk Electronic Structure of Mgdoped　InN Analyzed by Hard X-ray Photoelectron　Spectroscopy
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, Y. Koide, A. Yang, Y. Yamashita, H. Yoshikawa, K. Kobayashi, M. Kaneko, T. Yamaguchi, N. Uematsu, T. Araki, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] RF-MBE法を用いたGaN成長が疑似Al基板に与える影響
- Author(s)
  大澤真弥, 渡邉悠斗, 尾沼猛儀, 山口智広, 本田徹
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Mist CVD法を用いて製作したα-Al2O3基板上Ga-In-O薄膜の評価
- Author(s)
  田沼圭亮, 畠山匠, 尾沼猛儀, 山口智広, 窪谷茂幸, 片山竜二, 松岡隆志, 本田徹
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] “Impact of UV transparent Ga-In-O electrode in vertical-type GaN-based metal oxide semiconductor light-emitting diodes
- Author(s)
  S. Fujioka, T. Yasuno, A. Sato, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Shizuoka, Japan
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 疑似Al基板上に成長したGaN薄膜の特性評価
- Author(s)
  渡邉悠斗, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth of GaInN ternary alloys using DERI method and fabrication of pn-GaInN LEDs
- Author(s)
  T. Yamaguchi, K. Narutani, T. Onuma, T. Honda, T. Araki and Y. Nanishi
- Organizer
  2014 International Workshop on Future Energy Materials and Devices (IWFEMD 2014)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2014-08-04 – 2014-08-06
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Characterization of fluorescence emission of GaInN films
- Author(s)
  N. Toyomitsu, L. Sang, T. Yamaguchi, T. Honda and M. Sumiya
- Organizer
  The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  Kogakuin University, Tokyo, Japan
- Year and Date
  2014-11-01 – 2014-11-02
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Interface reaction between Al and N atoms in GaN growth on Al by RF-MBE
- Author(s)
  S. Osawa, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  Kogakuin University, Tokyo, Japan
- Year and Date
  2014-11-01 – 2014-11-02
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Mist CVD growth of Ga-In-O films grown on α-Al2O3 substrates
- Author(s)
  K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda
- Organizer
  International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014)
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2014-06-10 – 2014-06-14
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth of GaN films on alpha-Ga2O3/sapphire template
- Author(s)
  T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura, T. Honda
- Organizer
  32nd Electronic Materials Symposium (EMS-32)
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] R. Amiya, T. Yamaguchi, D. Tajimi, M. Hayashi, Y. Sugiura, T. Honda, T. Araki, and Y. Nanishi
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, Y. Koide, A. Yang, Y. Yamashita, H. Yoshikawa, K. Kobayashi, M. Kaneko, T. Yamaguchi, N. Uematsu, R. Iwamoto, T. Araki, and Y. Nanishi
- Organizer
  31st　Electronic Materials Symposium (EMS31)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Growth of InN and Related Alloys using DERI Method toward Fabrication of Optoelectronics Devices
- Author(s)
  T. Yamaguchi, K. Wang, T. Honda, E. Yoon, T. Araki, Y. Nanishi
- Organizer
  The 2nd International Conference on Advanced Electromaterials (ICAE2013)
- Place of Presentation
  Juju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBEによる窒化サファイア基板上アルミニウム薄膜成長
- Author(s)
  星川侑也, 大澤真弥, 松本雄大, 尾沼猛儀, 山口智広, 本田徹
- Organizer
  第62回応用物理学会春季講演会
- Place of Presentation
  東海大学湘南キャンパス, 秦野, 神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE
- Author(s)
  R. Imai, S. Yamamoto, R. Togashi, H. Murakami, Y. Kumagai, T. Yamaguchi, T. Araki, Y. Nanishi, and A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] GaN層のケミカルリフトオフに向けたAlの膜厚検討
- Author(s)
  大澤真弥, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Influence of native surface oxide on GaN surface band bending
- Author(s)
  R. Amiya, Y. Sugiura, D. Tajimi, T. Yamaguchi, T. Honda
- Organizer
  32nd Electronic Materials Symposium (EMS-32)
- Place of Presentation
  滋賀
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Impact of Native Surface Oxide on GaN Layers for their Surface Band Bending
- Author(s)
  R. Amiya, Y. Sugiura, D. Tajimi, T. Yamaguchi, T. Honda
- Organizer
  The 2nd International Conference on Advanced Electromaterials (ICAE2013)
- Place of Presentation
  Juju, Korea
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth of thick InGaN films with entire alloy composition using DERI method
- Author(s)
  T. Yamaguchi, N. Uematsu, T. Araki, T. Honda, E. Yoon and Y. Nanishi
- Organizer
  The 17th International Conference on Conference on Molecular Beam Epitaxy (MBE-17)
- Place of Presentation
  奈良県新公会堂　奈良県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] AR-XPS spectra of c-, c+ and m-plane n-GaN crystals
- Author(s)
  D. Isono, R. Amiya, T. Yamaguchi and T. Honda
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Shizuoka, Japan
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Kelvin force microscopic study on GaN layers grown on (111)Al templates by RF-MBE
- Author(s)
  T. Honda, T. Yamaguchi, Y. Sugiura, D. Isono, Y. Watanabe, S. Osawa, D. Tajimi, T. Iwabuchi, S. Kuboya, T. Tanikawa, R. Katayama and T. Matsuoka
- Organizer
  18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
- Place of Presentation
  High Country conference center Flagstaff, Arizona, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Influence of surface oxides for band bending of n-type GaN
- Author(s)
  Y. Sugiura, D. Isono, T. Yamaguchi and T. Honda
- Organizer
  The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  Kogakuin University, Tokyo, Japan
- Year and Date
  2014-11-01 – 2014-11-02
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Raman scattering study of α-Ga2O3 single-crystal films grown by mist CVD
- Author(s)
  L. Artus, N. Domenech-Amador, R. Cusco, T. Hatakeyama, T. Yamaguchi and T. Honda
- Organizer
  Materials Research Society 2014 Fall Meeting
- Place of Presentation
  Hynes Convention Center, Boston, MA, USA
- Year and Date
  2014-12-01 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Fabrication of Pseudo Aluminum Templates on 4H-SiC and Growth of GaN on Pseudo Aluminum Templates by RF-MBE
- Author(s)
  Y. Watanabe, S. Osawa, D. Tajimi, T. Hatakeyama, T. Yamaguchi and T. Honda
- Organizer
  5th International Symposium on Growth of III-Nitrides (ISGN-5)
- Place of Presentation
  The Westin, Peachtree Plaza, Atlanta, Georgia, USA
- Year and Date
  2014-05-18 – 2014-05-22
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] GaN系MOS-LEDを用いたGa-In-O近紫外透明電極の評価
- Author(s)
  藤岡秀平, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Investigation of Ga-In-O films grown on α-Al2O3 substrates by mist CVD
- Author(s)
  K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Shizuoka, Japan
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth of oxide thin films by mist chemical vapor deposition – Application of corundum-structured oxides for growth of GaN -
- Author(s)
  T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The 13th International Symposium on Advanced Technology (ISAT-13)
- Place of Presentation
  Danang, Vietnam
- Year and Date
  2014-11-13 – 2014-11-16
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 硬X線光電子分光法を用いたInNの表面電子状態評価
- Author(s)
  井村将隆, 津田俊輔, 長田貴弘, 小出康夫, Yang Anli, 山下良之, 吉川英樹, 小林啓介, 名西やすし, 山口智広, 金子昌充, 上松　尚, 荒木　努
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学城北地区/松山大学文京キャンパス、愛媛県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors’ Band gap-
- Author(s)
  Y. Nanishi, T.Yamaguchi, K.Wang, T.Araki and E. Yoon
- Organizer
  2012 Fall Meeting of the Korean Ceramic Society
- Place of Presentation
  Daejoin, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Blue-green light emitting diodes using pn-GaInN homojunction type-structure
- Author(s)
  K. Narutani, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Shizuoka, Japan
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Mist CVDを用いた酸化物薄膜成長
- Author(s)
  畠山匠, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] AlOx/AlN/GaNヘテロ構造の発光特性
- Author(s)
  尾沼猛儀、杉浦洋平、山口智広、本田徹、東脇正高
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道札幌市北海道大学札幌キャンパス
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] RF-MBE growth of GaN films on nitridated alpha-Ga2O3 buffer layer
- Author(s)
  T. Yamaguchi, T. Hatakeyama, D. Tajimi, Y. Sugiura, T. Onuma, T. Honda
- Organizer
  17th International Conference on Crystal　Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Cathode luminescence at 520 nm related on fluorescence green emission from pits formed on surface of GaInN films
- Author(s)
  N. Toyomitsu, L. Sang, J. Wang, T. Yamaguchi, T. Honda and M. Sumiya
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-14 – 2014-12-19
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Ga-In-O薄膜のウェットエッチングプロセス検討
- Author(s)
  吉田邦晃, 藤岡秀平, 後藤良介, 永井裕己, 山口智広, 佐藤光史, 本田徹
- Organizer
  第62回応用物理学会春季講演会
- Place of Presentation
  東海大学湘南キャンパス, 秦野, 神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] RF-MBE growth of group-III nitrides and mist CVD growth of group-III oxides
- Author(s)
  T. Yamaguchi, T. Onuma, H. Nagai, C. Mochizuki, M. Sato, T. Honda, T. Araki and Y. Nanishi
- Organizer
  Third International Conference on Materials Energy and Environments (ICMEE 2014)
- Place of Presentation
  Honolulu, Hawaii, USA
- Year and Date
  2014-07-02 – 2014-07-05
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Angled-resolved X-ray photoelectron spectroscopy of c-plane InN grown by RF-MBE
- Author(s)
  R. Amiya, T. Yamaguchi, D. Tajimi, Y. Sugiura, T. Araki, Y. Nanishi, T. Honda
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学城北地区/松山大学文京キャンパス、愛媛県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Mist CVD法を用いて成長したα-Al2O3基板上Ga-In-O薄膜の製作
- Author(s)
  田沼圭亮, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Characterization of GaN thin film grown on pseudo Al templates by radio-frequency plasma-assisted molecular beam epitaxy
- Author(s)
  Y. Watanabe, S. Osawa, D. Tajimi, T. Hatakeyama, T. Yamaguchi and T. Honda
- Organizer
  The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  Kogakuin University, Tokyo, Japan
- Year and Date
  2014-11-01 – 2014-11-02
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Light emission properties of ultra thin InN in the GaN matrix
- Author(s)
  T. Honda, T. Yamaguchi, T. Onuma, D. Tajimi, N. Watanabe, N. Hashimoto, K. Kusakabe and A. Yoshikawa
- Organizer
  International Conference on Metamaterials and Nanophysics (Metanano2014)
- Place of Presentation
  Hotel Melia Varadero, Varadero, Cuba
- Year and Date
  2014-04-22 – 2014-05-01
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Optical Properties of Ga-In-O Polycrystalline Films Fabricated by Molecular Precursor Method
- Author(s)
  T. Onuma, T. Yasuno, S. Takano, R. Goto, S. Fujioka, T. Hatakeyama, H. Hara, C. Mochizuki, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA’14)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2014-04-22 – 2014-04-25
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] GaInNからの蛍光発光と結晶性の相関
- Author(s)
  豊満直樹, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Angle-Resolved XPS Measurements of GaN and InN Grown by RF-MBE
- Author(s)
  T. Yamaguchi, R. Amiya, D. Tajimi, M. Hayashi, Y. Sugiura, T. Honda, N. Uematsu, T. Araki and Y. Nanishi
- Organizer
  17th OptoElectronics and Communications Conference (OECC 2012)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] n-GaN結晶のXPSにおける内部電界強度とピーク非対称性の検討
- Author(s)
  磯野大樹, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Growth of InGaN film and InGaN/InGaN periodic structure using DERI method
- Author(s)
  T. Yamaguchi, N. Uematsu, K. Wang, T. Araki, T. Honda, E. Yoon, and Y. Nanishi
- Organizer
  31st　Electronic Materials Symposium (EMS31)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 窒化ガリウム系発光ダイオードにおける「グリーンギャップ」問題
- Author(s)
  本田徹, 山口智広
- Organizer
  JAEA放射光科学シンポジウム 2015 「環境・エネルギー研究開発における放射光科学」
- Place of Presentation
  型放射光施設 SPring-8 放射光普及棟, 佐用町, 兵庫県
- Year and Date
  2015-03-16 – 2015-03-17
- Invited
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 厚膜GaInN成長とホモ接合型青緑LEDsの製作
- Author(s)
  鳴谷健人, 山口智広, 本田徹
- Organizer
  37th International Symposium on Optical communications
- Place of Presentation
  Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
- Year and Date
  2014-08-09 – 2014-08-11
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] β-Ga2O3結晶の透過と反射スペクトルの偏光依存性
- Author(s)
  尾沼猛儀、齋藤伸吾、佐々木公平、増井建和、山口智広、本田徹、東脇正高
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県平塚市東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289093
[Presentation] DERI法を応用したRF-MBEによるInGaN成長と評価
- Author(s)
  荒木努、山口智広、名西やすし
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第５回　窒化物半導体結晶成長講演会
- Place of Presentation
  大阪
- Invited
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Growth of InN, InGaN and those Nano-structures by DERI Method
- Author(s)
  Y. Nanishi, T.Yamaguchi, K. Wang, T. Araki and E. Yoon
- Organizer
  2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices
- Place of Presentation
  Berlin, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Fabrication of Vertical-Type GaN-Based Metal Oxide Semiconductor Light-Emitting Diodes
- Author(s)
  S. Fujioka, T. Yasuno, A. Sato, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA’14)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Fabrication of -(AlGa)2O3 on sapphire substrate by mist CVD
- Author(s)
  T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Hirasaki, H. Murakami, T. Yamaguchi and T. Honda
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-14 – 2014-12-19
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Mist chemical vapor deposition growth of α-(AlGa)2O3
- Author(s)
  T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Hirasaki, H. Murakami, T. Yamaguchi and T. Honda
- Organizer
  The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  Kogakuin University, Tokyo, Japan
- Year and Date
  2014-11-01 – 2014-11-02
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Spin-coating fabrication of In-doped ZnO films by molecular precursor method
- Author(s)
  R. Goto, T. Yasuno, T. Hatakeyama, H. Hara, H. Nagai, T. Yamaguchi, M. Sato, T. Honda
- Organizer
  International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014)
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2014-06-10 – 2014-06-14
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] AR-XPS spectra and band-bending properties of +c, -c and m-GaN surfaces
- Author(s)
  D. Isono, S. Fujioka, Y. Sugiura, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  Materials Research Society 2014 Fall Meeting
- Place of Presentation
  Hynes Convention Center, Boston, MA, USA
- Year and Date
  2014-12-01 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Study on structure perfection of one-monolayer thick InN in hexagonal GaN using XRD techniques
- Author(s)
  N. Watanabe, D. Tajimi, N. Hashimoto, K. Kusakabe, K.Wang, T. Yamaguchi, A. Yoshikawa and T. Honda
- Organizer
  The International Workshop on Nitride Semiconductors (IWN 2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Mist chemical vapor deposition of Ga-In-O films
- Author(s)
  K. Tanuma, T. Hatakeyama, R. Goto, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  Kogakuin University, Tokyo, Japan
- Year and Date
  2014-11-01 – 2014-11-02
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] Strong correlation between oxygen donor and nearsurface electron accumulation in non-polar mplane (10-10) InN film
- Author(s)
  A. Yang, Y. Yamashita, H Yoshikawa, T. Yamaguchi, M. Imura, M. Kaneko, O. Sakata, Y. Nanishi, and K. Kobayashi
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌コンベンションセンター　北海道
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] Fabrication of ZnO thin film by molecular precursor method
- Author(s)
  R. Goto, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
- Organizer
  The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
- Place of Presentation
  Kogakuin University, Tokyo, Japan
- Year and Date
  2014-11-01 – 2014-11-02
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] n-GaN結晶のXPSスペクトルにおける内殻準位ピーク非対称性の検討
- Author(s)
  磯野大樹, 網谷良介, 杉浦洋平, 山口智広, 本田徹
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] 表面酸化物のGaN表面フェルミ準位と表面バンド曲がりに及ぼす影響
- Author(s)
  網谷良介、多次見大樹、杉浦洋平、山口智広、本田徹
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] RF-MBE Growth of pn-GaInN Structure and Fabrication of Blue-Green Homojunction-Type Light Emitting Diode
- Author(s)
  K. Narutani, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma, and T. Honda
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA’14)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] DERI法InGaN成長におけるラジカルモニタリング技術応用
- Author(s)
  荒木努、阪口順一、上松尚、油谷匡胤、齋藤巧、山口智広、名西やす之、T. Fujishima, E. Matioli, T. Palacios
- Organizer
  第4回　窒化物半導体結晶成長講演会(プレIWN2012）
- Place of Presentation
  東京大学生産技術研究所, 東京都
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] MBE Growth of Thick InN and InGaN Films using DERI Method
- Author(s)
  T. Araki, T. Yamaguchi, E. Yoon, Y. Nanishi
- Organizer
  2013 JSPS-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-25706020
[Presentation] Thickness dependence of pseudo aluminum templates in growth of GaN by RF-MBE
- Author(s)
  S. Osawa, T. Onuma, T. Yamaguchi and T. Honda
- Organizer
  The International Workshop on Nitride Semiconductors (IWN 2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25420341
[Presentation] In-situ monitoring of InGaN growth using DERI method
- Author(s)
  T. Araki, N. Uematsu, M. Yutani, T. Saito, J. Sakaguchi, T. Yamaguchi, T. Fujishima, E. Matioli, T. Palacios, Y. Nanishi
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN2012)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-21246004
[Presentation] 分子プレカーサー水溶液を用いたミストCVD法によるZnO薄膜製作
- Author(s)
  後藤良介, 澁木勇人, 田沼圭亮, 畠山匠, 永井裕己, 山口智広, 佐藤光史, 本田徹
- Organizer
  第62回応用物理学会春季講演会
- Place of Presentation
  東海大学湘南キャンパス, 秦野, 神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25420341

1. NANISHI Yasushi (40268157)

# of Collaborated Projects: 4 results

# of Collaborated Products: 437 results
2. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 4 results

# of Collaborated Products: 318 results
3. KANEKO Masamitsu (70374709)

# of Collaborated Projects: 3 results

# of Collaborated Products: 37 results
4. SASAKI TAKUO (90586190)

# of Collaborated Projects: 3 results

# of Collaborated Products: 13 results
5. WANG Ke (60532223)

# of Collaborated Projects: 3 results

# of Collaborated Products: 96 results
6. 富樫理恵 (50444112)

# of Collaborated Projects: 3 results

# of Collaborated Products: 11 results
7. HYUNSEOK Na (80411239)

# of Collaborated Projects: 2 results

# of Collaborated Products: 124 results
8. NAOI Hiroyuki (10373101)

# of Collaborated Projects: 2 results

# of Collaborated Products: 6 results
9. Honda Tohru (20251671)

# of Collaborated Projects: 2 results

# of Collaborated Products: 181 results
10. 村上尚 (90401455)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
11. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. KIKAWA Jyunjiro (70469196)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
13. SUDA Jun (00293887)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
14. AKASAKA Tetsuya (90393735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. Higashiwaki Masataka (70358927)

# of Collaborated Projects: 1 results

# of Collaborated Products: 23 results
16. Kumagai Yoshinao (20313306)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
17. KISHINO Katsumi (90134824)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
18. 尾沼猛儀 (10375420)

# of Collaborated Projects: 1 results

# of Collaborated Products: 24 results
19. 後藤健 (50572856)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
20. 小西敬太 (50805257)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 日比野浩樹 (60393740)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 野村一郎 (00266074)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
23. 大音隆男 (20749931)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results

YAMAGUCHI Tomohiro 山口 智広

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赤色発光素子応用に資するInGaNマトリクスの構造制御Principal Investigator

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Control of heterointerface region in the heteroepitaxial growth of In-based nitride semiconductorsPrincipal Investigator

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Development of fundamental crystal growth technology of In-based nitride alloy semiconductorsPrincipal Investigator

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Development of MBE growth technology of InN-based alloys using quasi-LPE methodPrincipal Investigator

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[Book] Chapter 1-Molecular-beam epitaxy of InN, Editors : T. D. Veal, C. F. McConville, and W. J. Schaff, CRC Press/Taylor and Francis(in press)2009

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[Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys2009

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YAMAGUCHI Tomohiro 山口智広