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ISHIWARA Hiroshi  石原 宏

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Researcher Number 60016657
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Affiliation (based on the past Project Information) *help 2009 – 2010: Tokyo Institute of Technology, 大学院・総合理工学研究科, 教授
2008: Tokyo Institute of Technology, 大学院・総合理工学研究科(研究院), 教授
2007: Tokyo Institute of Technology, 大学院・総合理工学研究科, 教授
2005 – 2006: 東京工業大学, 大学院総合理工学研究科, 教授
1998 – 2003: Tokyo Institute of Technology, Frontier Collaborative Research Center, Professor, フロンティア創造共同研究センター, 教授 … More
1998: 東京工業大学, プロンティア創造研究センター, 教授
1991 – 1998: 東京工業大学, 精密工学研究所, 教授
1992: 東京工業大学, 精研, 教授
1990: 東京工業大学精密工学研究所, 教授
1989: TOKYO INSTITUTE OF TECHNOLOGY, RESEARCH LABORATORY OF PRECISION MACHINERY AND ELECTRONICS, PROFESSOR, 精密工学研究所, 教授
1987 – 1988: Tokyo Institute of Technology, Graduate school of Science & Enginerrirng,Associa, 大学院総合理工学研究科, 助教授
1986: 東京工大, 国立大学(その他), 助教授
1986: 東京工芸大学, 大学院・総合理工学研究科, 助教授 Less
Review Section/Research Field
Principal Investigator
電子デバイス・機器工学 / Electron device/Electronic equipment / 電子材料工学 / Applied materials / Applied materials science/Crystal engineering / 電子機器工学
Except Principal Investigator
Electronic materials/Electric materials / Science and Engineering / Applied materials
Keywords
Principal Investigator
シリコン / 強誘電体 / Si / 超高圧 / SOI / MOSFET / 熱不整 / 固相成長 / SrBi_2Ta_2O_9 / YMnO_3 … More / GaAs-on-Si / CdS / MISFET / 適応学習 / 不揮発性メモリ / 集積回路 / 弾性歪 / GaAs / ヘテロ構造 / エピタキシャル成長 / RAPID THERMAL ANNEALING / SILICON / GERMANIUM / SOLID PHASE EPITAXY / HETEROSTRUCTURE / OHMIC CONTACT / プラズマ化学気相堆積法 / 炭化シリコン / ヘテロ接合 / オーミックコンタクト / 高温短時間熱処理 / ゲルマニウム / 固相エピタキシャル成長 / オ-ミックコンタクト / ひ化ガリウム / amorphous Si / silicon-on-insulator / selective doping / lateral solid phase epitaxy / イオン注入 / 選択ドープ構造 / 横方向固相成長 / 選択ドープ法 / 選択ドーピング / 三次元集積回路 / 非晶質シリコン / 横方向成長 / Silicon / Memory / Ferroelectric / PbZr_<1-x>Ti_xO_3 / MFSFET / 強誘電体メモリ / メモリ / strain-free / photoluminescence / annealing / elastic strain / thermal expansion coefficient / ultrahigh pressure / GaAs‐on‐Si / アニール / 熱膨張率 / adaptive-learning system / retina chip / analog-digital-merged circuits / nuron-MOS / imaging processor / caotic circuits / nurochip / bio-inspired processing / 4端子デバイス / 強誘導体 / ニューロデバイス / イメージセンサ / ニューラクネットワーク / 自己組織化 / 神経回路 / カオス / パルス幅変調 / パルス周波数変調 / 適応学習機能 / 網膜チップ / AD融合回路技術 / ニューロンMOS / イメージプロセッサ / カオス生成回路 / ニューロチップ / 生体的処理 / Glass Film / Sereen Printing / Diaphragm / Semiconductor / Pressure Sensor / ガラス薄膜 / スクリーン印刷 / ダイアフラム / 半導体 / 圧力センサ / Adaptive-Learning / Self-Learning / Ferroelectrics / Neural-Networks / ニューロ素子 / 自己学習機能 / 自己学習 / ニューラルネット / C_60 / TrFE / PVDF / ペンタセン / PVDF/TrFE / 強誘電体ゲートトランジスタ / フレキシブルメモリ / 有機半導体 / 有機強誘電体 / 電子デバイス / 界面準位 / トランジスタ / カーボンナノチューブ / ヘフロエピタキシー / ヘテロエピタキシ- / 蒸着 / 酸化物超伝導薄膜 / ア-ク放電 … More
Except Principal Investigator
GaAs / Ge / SrBi_2Ta_2O_9 / BaMgF_4 / 強誘電体 / MIS device / Fluoride / Heteroepitaxy / 弗化物薄膜エピタキシャル成長 / 砒化ガリウム / CMISトランジスタ / EBEIピタキシー / ゲルマニウム / ひ化ガリウム / ヘテロ構造 / 弗化物 / MISデバイス / SOI / ヘテロエピタキシー / plasma-assisted MOCVD / metalorganic chemical vapor deposition (MOCVD) / ferroelectric memory / 酸素プラズマ / プラズマ / 有機金属気相成長法(MOCVD) / 強誘電体メモリ / ferroelectric-gate transistor / neural network / non-volatile memory / ferroelectrics / 強誘電体ゲートトランジスタ / ニューラルネット / 不揮発性メモリ / moleculat beam epitaxy (MBE) / two dimensional electron gas / high electron mobility transistor (HEMT) / ferroelectric thin film / 分子線エピタキシ-(MBE) / 2次元電子ガス / 高電子移動度トランジスタ(HEMT) / Ultimate Material and Process / Intelligent Information Processing / Silicon Integrated Circuits / Intelligent electronic systems / 材料 / プロセス / デバイス / 回路 / 半導体プロセス / 集積回路 / シリコンテクノロジー / システム / マイクロエレクトロニクス / アーキテクチャ / 極限材料・プロセス / 知能情報処理 / シリコン集積回路 / 知的電子システム / 不揮発生SRAM回路 / しきい値電圧 / 基板バイパス / 強誘電体SPICEモデル / 不揮発性SRAM回路 / 強誘電体ゲートFET / 基板バイアス / 低スタンバイ消費電力 / FeRAM / 不揮発性ラッチ回路 / 強誘電体FET / しきい値 / 基盤バイアス / 低消費電力 / 半導体MOSFET / マイクロマイン / 半導体レーザー / マイクロマシン / ニューロトランジスタ / 光集積回路 / 光インターコネクト / 並列光情報処理 / 微小光学 / 光通信 / 半導体レーザ / 集積化 / シリコン / 知能エレクトロニクス / HBT / 無ひずみ / ひずみ成長 / ヘテロ接合 / シリコン系ヘテロ接合 / 高濃度ド-ピング / 歪成長 / 格子整合 / 熱反応CVD / SiGe / 固相エピタキシャル成長 / イオン注入 Less
  • Research Projects

    (22 results)
  • Research Products

    (63 results)
  • Co-Researchers

    (34 People)
  •  A study on low-power, high-density integrated circuits for flexible organic FeRAMsPrincipal Investigator

    • Principal Investigator
      ISHIWARA Hiroshi
    • Project Period (FY)
      2007 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Tokyo Institute of Technology
  •  カーボンナノチューブを用いた強誘電体/半導体直接接触トランジスタの作製Principal Investigator

    • Principal Investigator
      石原 宏
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Tokyo Institute of Technology
  •  高・強誘電体膜を用いた極低電圧・超低消費電力FET,及び高性能新機能素子の開発

    • Principal Investigator
      平本 俊郎
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Ultimate Integration of Intelligence on Silicon Electronic Systems

    • Principal Investigator
      OHMI Tadahiro
    • Project Period (FY)
      1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Tohoku University
  •  Development of Low-Temperature MOCVD Technology for Ferroelectric Thin Films

    • Principal Investigator
      TOKUMITSU Eisuke
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tokyo Institute of Technology
  •  Study on Singl-Transistor-Cell-Type Ferroelectric MemoryPrincipal Investigator

    • Principal Investigator
      ISHIWARA Hiroshi
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Tokyo Institute of Technology
  •  Study on memory characteristics of non-volatile ferroelectric-gate transistors for neural network applications

    • Principal Investigator
      TOKUMITSU Eisuke
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOKYO INSTITUTE OF TECHNOLOGY
  •  超並列光エレクトロニクス

    • Principal Investigator
      伊賀 健一
    • Project Period (FY)
      1995 – 2000
    • Research Category
      Grant-in-Aid for COE Research
    • Research Institution
      Tokyo Institute of Technology
  •  Bio-inspired processing of multi-dimensional informationPrincipal Investigator

    • Principal Investigator
      ISHIHARA Hiroshi
    • Project Period (FY)
      1995 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tokyo Institute of Technology
  •  Preparation of ferroelectric BaMgF_4films on GaAs for the control of two-dimensional electron gas

    • Principal Investigator
      TOKUMITSU Eisuke
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOKYO INSTITUTE OF TECHNOLOGY
  •  Fabrication of Long-Life Laser Diodes in GaAs films on Si formed by annealing under ultrahigh pressurePrincipal Investigator

    • Principal Investigator
      ISHIWARA Hiroshi
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
  •  極限集積化シリコン知能エレクトロニクス

    • Principal Investigator
      OHMI Tadahiro
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University
  •  超高圧下アニールと圧力・温度差比例降下法によるヘテロ構造の熱不整欠陥の抑制Principal Investigator

    • Principal Investigator
      石原 宏
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tokyo Institute of Technology
  •  Development of Hig-Sensitive Pressure Sensors Using Screen Prenting MethodPrincipal Investigator

    • Principal Investigator
      ISHIWARA Hiroshi
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Tokyo Institute of Technology
  •  超高圧下アニールと圧力・温度差比例降下法によるヘテロ構造の熱不整欠陥の抑性Principal Investigator

    • Principal Investigator
      石原 宏
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tokyo Institute of Technology
  •  Self-Learning Functions in Electron Devices and Their Applications to Neural NetworksPrincipal Investigator

    • Principal Investigator
      ISHIWARA Hiroshi
    • Project Period (FY)
      1992 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      電子機器工学
    • Research Institution
      Tokyo Institute of Technology
  •  超高圧下アニ-ルと圧力・温度差比例降下法によるヘテロ構造の熱不整欠陥の抑制Principal Investigator

    • Principal Investigator
      石原 宏
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tokyo Institute of Technology
  •  無ひずみシリコン系ヘテロ接合の新しい作製手法とその超高速素子への応用

    • Principal Investigator
      FURUKAWA Seijiro
    • Project Period (FY)
      1990 – 1991
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      Tokyo Institute of Technology
  •  ア-ク放電蒸着法を用いたSi基板上への酸化物超伝導薄膜のエピタキシャル成長Principal Investigator

    • Principal Investigator
      石原 宏
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tokyo Institute of Technology
  •  STUDY ON THERMALLY STABLE HETEROJUNCTION OHMIC CONTACTS TO GaAsPrincipal Investigator

    • Principal Investigator
      ISHIWARA Hiroshi
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      TOKYO INSTITUTE OF TECHNOLOGY
  •  Lateral Solid Phase Epitaxy of Selectively Doped Si FilmsPrincipal Investigator

    • Principal Investigator
      ISHIWARA Hiroshi
    • Project Period (FY)
      1986 – 1987
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      Tokyo Institute of Technology
  •  Electronic properties of nearly lattice matched heterostructures and their application to low-power, very-high-spped electron devices

    • Principal Investigator
      FURUKAWA Seijiro
    • Project Period (FY)
      1984 – 1987
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Research Institution
      Tokyo Institute of Technology

All 2011 2010 2009 2008 2007

All Journal Article Presentation

  • [Journal Article] Solvent dependency of pentacene degradation for top-gate-type organic ferroelectric memory2011

    • Author(s)
      T.Mabuchi, S-M.Yoon, H.Ishiwara
    • Journal Title

      Current Appl.Phys. 11 in press

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer2011

    • Author(s)
      Y-U.Song, H.Ishiwara, S.Ohmi
    • Journal Title

      IEICE Trans.on Electronics

      Volume: E94-C(in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Electrical characteristics of Si MFIS-FETs using P(VDF-TrFE) thin films2011

    • Author(s)
      J-W.Yoon, S-M.Yoon, H.Ishiwara
    • Journal Title

      Current Appl.Phys. 11 in press

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Electrical characteristics of Si MFIS-FETs using P (VDF-TrFE) Thin films2011

    • Author(s)
      J-W.Yoon, S-M.Yoon, H.Ishiwara
    • Journal Title

      Current Appl.Phys.

      Volume: 11(in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer2011

    • Author(s)
      Y-U.Song, H.Ishiwara, S.Ohmi
    • Journal Title

      IEICE Trans.on Electronics E94-C

      Pages: 767-770

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Solvent dependency of pentacene degradation for top-gate-type organic ferroelectric memory2011

    • Author(s)
      T.Mabuchi, S-M.Yoon, H.Ishiwara
    • Journal Title

      Current Appl.Phys.

      Volume: 11(in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Impact of interface controlling layer of Al_2O_3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor2010

    • Author(s)
      S-M.Yoon, S-H.Yang, S-W.Jung, C-W.Byun, S-H.K.Park, C-S.Hwang, G-G.Lee, E.Tokumitsu, H.Ishiwara
    • Journal Title

      Appl.Phys.Lett. 96

      Pages: 232903-232903

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Non-volatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinyliden fluoride-trifluoro-ethylene)2010

    • Author(s)
      S-M.Yoon, S-W.Jung, S-H.Yang, C-W.Byun, C-S.Hwang, S-H.K.Park, H.Ishiwara
    • Journal Title

      Organic Electronics 11

      Pages: 1746-1752

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Improvement of ferroelectric fatigue endurance in poly (methyl metacrylate) -blended poly (vinylidene fluoride-trifluoroethylene)2010

    • Author(s)
      J-W. Yoon, S-M. Yoon, H. Ishiwara
    • Journal Title

      Jpn. J. Appl. Phys 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Characterization of nonvolatile memory behaviors of Al/poly (vinylidene fluoride-trifluoro-ethylene)/Al_2O_3/ZnO thin-film transistors2010

    • Author(s)
      S-M.Yoon, S-H.Yang, C-W.Byun, S-H.K.Park, S-W.Jung, D-H.Cho, S-Y.Kang, C-S.Hwang, H.Ishiwara
    • Journal Title

      Jpn.J.Appl.Phys. 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Improvement of ferroelectric fatigue endurance in poly (methylmetacrylate)-blended poly (vinylidene fluoride-trifluoroethylene)2010

    • Author(s)
      J-W.Yoon, S-M.Yoon, H.Ishiwara
    • Journal Title

      Jpn.J.Appl.Phys. 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Characterization of nonvolatile memory behaviors of Al/poly (vinylidene fluoridetrifluoroethylene)/Al_2O_3/ZnO thin-film transistors2010

    • Author(s)
      S-M.Yoon, S-H.Yang, C-W.Byun, S-H.K.Park, S-W.Jung, D-H.Cho, S-Y.Kang, C-S.Hwang, H.Ishiwara
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Impact of interface controlling layer of Al_2O_3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor2010

    • Author(s)
      S-M.Yoon, S-H.Yang, S-W.Jung, C-W.Byun, S-H.K.Park, C-S.Hwang, G-G.Lee, E.Tokumitsu, H.Ishiwara
    • Journal Title

      Appl.Phys.Lett

      Volume: 96

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Non-volatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly (vinyliden fluoride-trifluoroethylene)2010

    • Author(s)
      S-M.Yoon, S-W.Jung, S-H.Yang, C-W.Byun, C-S.Hwang, S-H.Ko Park, H.Ishiwara
    • Journal Title

      Organic Electronics

      Volume: 11 Pages: 1746-1752

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Nonvolatile memory thin film transistors using spin-coated amorphous zinc indium oxide channel and ferroelectric copolymer2010

    • Author(s)
      S-M.Yoon, S-W.Jung, S-H.Yang, C-W.Byun, C-S.Hwang, H.Ishiwara
    • Journal Title

      J.Electrochem.Soc. 157

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Improvement of ferroelectric fatigue endurance in poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene)2010

    • Author(s)
      J-W.Yoon, S-M.Yoon, H.Ishiwara
    • Journal Title

      Jpn.J.Appl.Phys. 49

      Pages: 30201-30201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Nonvolatile memory thin film transistors using spin-coated amorphous zinc indium oxide channel and ferroelectric copolymer2010

    • Author(s)
      S-M.Yoon, S-W.Jung, S-H.Yang, C-W.Byun, C-S.Hwang, H.Ishiwara
    • Journal Title

      J.Electrochem.Soc.

      Volume: 157

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Comparative study on metal-ferro-electric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoro-ethylene) and poly (methyl metacrylate)-blended poly (vinyliden fluoride-trifluoro-ethylene)2009

    • Author(s)
      J-W.Yoon, B-E.Park, H.Ishiwara
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Comparative study on metal-ferroelectric-Insulator-semiconductor diodes composed of poly (vinyliden fluoride-trifluoroethylene) and poly (methyl metacrylate) -blended poly (vinyli-den fluoride-trifluoroethylene)2009

    • Author(s)
      J-W. Yoon, B-E. Park, H. Ishiwara
    • Journal Title

      Jpn. J. Appl. Phys 48

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Study on stability of pentacene-based metal-oxide-semiconductor diodes in air using capacitance-voltage characteristics2009

    • Author(s)
      Md. Akhtaruzzaman, S. Ohmi, J. Nishida, Y. Yamashita, H. Ishiwara
    • Journal Title

      Jpn. J. Appl. Phys 48

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly (vinyliden fluoride-trifluorethylene) and poly (methylmetacrylate)-blended poly (vinyliden fluoride-trifluoroethylene)2009

    • Author(s)
      J-W.Yoon, B-E.Park, H.Ishiwara
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Study on stability of pentacene-based metal-oxide-semiconductor diodes in air using capacitance-voltage characteristics2009

    • Author(s)
      Md.Akhtaruzzaman, S.Ohmi, J.Nishida, Y.Yamashita, H.Ishiwara
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Electrical Characteristics and Stability of Pentacene Field-Effect Transistors in Air Using HfO_2 as a Gate Insulator2009

    • Author(s)
      Md.Akhtaruzzaman, S.Ohmi, H.Ishiwara
    • Journal Title

      MRS Proceedings 1115

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Organic ferroelectric diodes with long retention characteristics suitable for non-volatile memory applications2008

    • Author(s)
      S.Fujisaki, H.Ishiwara, Y.Fujisaki
    • Journal Title

      Appl.Phys.Express 1

      Pages: 81801-81803

    • NAID

      10025081951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Organic ferroelectric diodes with long retention characteristics suitable for non-volatile memory applications2008

    • Author(s)
      S. Fujisaki, H. Ishiwara, Y. Fujisaki
    • Journal Title

      Appl. Phys. Express Vol. 1

      Pages: 81801-81803

    • NAID

      10025081951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly (vinylidene fluoride-trifluoroethylene) copolymer films2008

    • Author(s)
      J-W. Yoon, S. Ohmi, B-E. Park, H. Ishiwara
    • Journal Title

      Appl. Phys. Lett. Vol. 93

      Pages: 162904-162906

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Organic ferroelectric diodes with long retention characteristics suitable for non-volatile memory applications2008

    • Author(s)
      S. Fujisaki, H. Ishiwara, Y. Fujisaki
    • Journal Title

      Appl. Phys. Express 1

      Pages: 81801-81803

    • NAID

      10025081951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Inorganic and organic ferroelectric thin films for memory applications2008

    • Author(s)
      H.Ishiwara
    • Journal Title

      ECS Trans. 13

      Pages: 279-284

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Inorganic and organic ferroelectric thin films for memory applications2008

    • Author(s)
      H. Ishiwara
    • Journal Title

      ECS Transactions Vol. 13

      Pages: 279-284

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly (vinylidene fluoride-trifluoroethylene) copolymer films2008

    • Author(s)
      J-W. Yoon, S. Ohmi, B-E. Park, H. Ishiwara
    • Journal Title

      Appl. Phys. Lett 93

      Pages: 162904-162906

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinyliden fluoride-trifluoro-ethylene) copolymer films2008

    • Author(s)
      J-W.Yoon, S.Ohmi, B-E.Park, H.Ishiwara
    • Journal Title

      Appl.Phys.Lett. 93

      Pages: 162904-162906

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Excellent Ferroelectricity of Thin Poly (Vinylidene Fluoride-Trifluoro-ethylene) Copolymer Films and Low Voltage Operation of Capacitors and Diodes2007

    • Author(s)
      S.Fujisaki, Y.Fujisaki, H.Ishiwara
    • Journal Title

      IEEE Trans.on Ultrasonics, Ferroelectrics, and Frequency Control 154

      Pages: 2592-2594

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Journal Article] Excellent Ferroelectricity of Thin Poly (Vinylidene Fluoride-Trifluoroethylene) Copolymer Films and Low Voltage Operation of Capacitors and Diodes2007

    • Author(s)
      S. Fujisaki, Y. Fujisaki, H. Ishiwara
    • Journal Title

      IEEE Trans. on Untrsonics, Ferroelectrics, and Frequency Control 154

      Pages: 2592-2594

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Fabrication and characterization of top-gate-type MFS (metal-ferroelectric-semiconductor) memory diodes using pentacene as a? semiconductor film2010

    • Author(s)
      T.Mabuchi, S-M.Yoon, H.Ishiwara
    • Organizer
      Intern.Conf.on Electronic Materials and Nanotechnology for Green Environment
    • Place of Presentation
      Jeju.
    • Year and Date
      2010-11-23
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Fabrication and characterization of top-gate-type MFS (metal-ferroelectric-semicon ductor) memory diodes using pentacene as a semiconductor film2010

    • Author(s)
      T.Mabuchi, S-M.Yoon, H.Ishiwara
    • Organizer
      Intern.Conf.on Electronic Materials and Nanotechnology for Green Environment
    • Place of Presentation
      済州
    • Year and Date
      2010-11-23
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON high-k gate insulator2010

    • Author(s)
      M.Liao, H.Ishiwara, S.Ohmi
    • Organizer
      2010 International Conference on Solid State Devices and Materials
    • Place of Presentation
      東京
    • Year and Date
      2010-09-24
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Electrical characteristics of Si MFIS-FETs using P(VDF-TrFE) thin films2010

    • Author(s)
      J-W.Yoon, S-M.Yoon, H.Ishiwara
    • Organizer
      7^<th> Asian Meeting on Ferroelectricity and 7^<th> Asian Meeting on Electroceramics
    • Place of Presentation
      Jeju.
    • Year and Date
      2010-06-30
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Electrical characteristics of Si MFIS-FETs using P(VDF-TrFE) thin films2010

    • Author(s)
      J-W.Yoon, S-M.Yoon, H.Ishiwara
    • Organizer
      7^<th> Asian Meeting on Ferroelectricity and 7^<th> Asian Meeting on Electroceramics
    • Place of Presentation
      済州
    • Year and Date
      2010-06-30
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON high-k gate insulator2010

    • Author(s)
      M.Liao, H.Ishiwara, S.Ohmi
    • Organizer
      2010 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tokyo.
    • Year and Date
      2010-09-24
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Electrical characteristics of OFETs with thin gate dielectric2009

    • Author(s)
      Y-U.Song, S.Ohmi, H.Ishiwara
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Tokyo.
    • Year and Date
      2009-06-24
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Studies on organic ferroelectric memories2009

    • Author(s)
      H, Ishiwara
    • Organizer
      WCU Intern. Conf. on Quantum Phases and Devices
    • Place of Presentation
      ソウル
    • Year and Date
      2009-10-29
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film2009

    • Author(s)
      G-G.Lee, S-M.Yoon, J-W.Yoon, Y.Fujisaki, H.Ishiwara, E.Tokumitsu
    • Organizer
      Fall meeting of Mater.Res.Soc.
    • Place of Presentation
      Boston.
    • Year and Date
      2009-12-03
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Studies on organic ferroelectric memories2009

    • Author(s)
      H.Ishiwara
    • Organizer
      WCU Intern.Conf.on Quantum Phases and Devices
    • Place of Presentation
      Seoul.
    • Year and Date
      2009-10-29
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Studies on organic ferroelectric memories2009

    • Author(s)
      H. Ishiwara
    • Organizer
      WCU Intern. Conf. on Quantum Phases and Devices
    • Place of Presentation
      Seoul
    • Year and Date
      2009-10-29
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Recent progress in FET-type memories with inorganic and organic ferroelectric gate films2008

    • Author(s)
      H. Ishiwara
    • Organizer
      3rd Intern. Sympo. on Next Generation Non-volatile Memory Technology for Terabit Memory
    • Place of Presentation
      Seoul
    • Year and Date
      2008-08-29
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Ferroelectrics characteristics of p(VDF-TrFE) thin films patterned by plasma etching2008

    • Author(s)
      J-W.Yoon, S.Ohmi, B-E.Park, H.Ishiwara
    • Organizer
      20^<th> Intern.Sympo.on Integrated Ferroelectrics
    • Place of Presentation
      Singapore.
    • Year and Date
      2008-06-11
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Recent progress in FET-type memories with inorganic and organic ferroelectric gate films2008

    • Author(s)
      H.Ishiwara
    • Organizer
      3^<th> Intern.Sympo.on Next Generation Non-volatile Memory Technology for Terabit Memory
    • Place of Presentation
      Seoul.
    • Year and Date
      2008-08-29
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] A study on air stability of pentacene based MOS diode structures2008

    • Author(s)
      Md Akhtaruzzaman, S.Ohmi, J.Nishida, Y.Yamashita, H.Ishiwara
    • Organizer
      Intern.Conf.on Solid State Device and Materials
    • Place of Presentation
      Tsukuba.
    • Year and Date
      2008-09-25
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Ferroelectrics characteristics of p(VDF-TrFE) thin films patterned by plasma etching2008

    • Author(s)
      J. W. Yoon, S. Ohmi, H. Ishiwara
    • Organizer
      20th Intern. Sympo. on Integrated Ferroelectrics
    • Place of Presentation
      Singapore
    • Year and Date
      2008-06-11
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Electrical characteristics and air-stability of pentacene based MOS diodes2008

    • Author(s)
      Md. Akhtaruzzaman, S. Ohmi, H. Ishiwara
    • Organizer
      Fall Meeting of Mater. Res. Soc.
    • Place of Presentation
      Boston
    • Year and Date
      2008-12-03
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Electrical characteristics and air-stability of pentacene based MOS diodes2008

    • Author(s)
      Md. Akhtaruzzaman, S. Ohmi, H. Ishiwara
    • Organizer
      Fall Meeting of Mater. Res. Soc
    • Place of Presentation
      Boston
    • Year and Date
      2008-12-03
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Characteristics of metal-ferroelectric-insulator-semiconductor structures based on poly (vinyliden fluoride-trifluoroethylene)2008

    • Author(s)
      尹珠元、大見俊一郎、石原宏
    • Organizer
      電子情報信学会 シリコン材料・デバイス研究会
    • Place of Presentation
      東京
    • Year and Date
      2008-03-14
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Electrical characteristics and air-stability of pentacene based MOS diodes2008

    • Author(s)
      Md.Akhtaruzzaman, S.Ohmi, H.Ishiwara
    • Organizer
      Fall Meeting of Mater.Res.Soc.
    • Place of Presentation
      Boston.
    • Year and Date
      2008-12-03
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Ferroelectric characteristics of p(VDF-TrFE) thin films patterned by plasma etching2008

    • Author(s)
      J. W. Yoon, S. Ohmi, H. Ishiwara
    • Organizer
      20th Intern. Sympo. on Integrated Ferroelectrics
    • Place of Presentation
      Singapore
    • Year and Date
      2008-06-11
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] A study on air stability of pentacene based MOS diode structures2008

    • Author(s)
      Md. Akhtaruzzaman, S. Ohmi, J. Nishida, Y. Yamashita, H. Ishiwara
    • Organizer
      Intern. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba
    • Year and Date
      2008-09-25
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors2007

    • Author(s)
      H.Ishiwara
    • Organizer
      Nano Korea 2007 Sympo.
    • Place of Presentation
      Seoul.
    • Year and Date
      2007-08-29
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Patterning of poly(vinyliden fluoride-trifluoroethylene) thin films by oxygen plasma etching2007

    • Author(s)
      J-W.Yoon, S.Fujisaki, H.Ishiwara
    • Organizer
      41^<th> Conf.on New Exploratory Technologies
    • Place of Presentation
      Seoul.
    • Year and Date
      2007-10-26
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors2007

    • Author(s)
      H. Ishiwara
    • Organizer
      Nano Korea 2007 Sympo.
    • Place of Presentation
      Seoul
    • Year and Date
      2007-08-29
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Excellent ferroelectricity of thin poly (vinylidene fluoride-trifluoroethylene) copolymer films and low voltage operation of capacitors and diodes2007

    • Author(s)
      S. Fujisaki, Y. Fujisaki, H. Ishiwara
    • Organizer
      16th IEEE Intern. Sympo. on Applications of Ferroelectrics
    • Place of Presentation
      奈良
    • Year and Date
      2007-05-30
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Current status and prospect of ferroelectric random access memory2007

    • Author(s)
      H.Ishiwara
    • Organizer
      5^<th> IUMRS Intern.Conf.on Advanced Materials
    • Place of Presentation
      Bangalore.
    • Year and Date
      2007-10-09
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Excellent ferroelectricity of thin poly(vinyliden fluoride-trifluoro-ethylene) copolymer films and low voltage operation of capacitors and diodes2007

    • Author(s)
      S.Fujisaki, Y.Fujisaki, H.Ishiwara
    • Organizer
      16^<th> IEEE Intern.Sympo.on Applications of Ferroelectrics
    • Place of Presentation
      Nara.
    • Year and Date
      2007-05-30
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Patterning of poly (vinyliden fluoride-trifluoroethylene) thin films by oxygen plasma etching2007

    • Author(s)
      J-W. Yoon, S. Fujisaki and H. Ishiwara
    • Organizer
      4th Conf. on New Exploratory Technologies
    • Place of Presentation
      Seoul
    • Year and Date
      2007-10-26
    • Data Source
      KAKENHI-PROJECT-19206039
  • [Presentation] Current status and prospect of ferroelectric random access memory2007

    • Author(s)
      H. Ishiwara
    • Organizer
      5th IUMRS Intern. Conf. on Advanced Materials
    • Place of Presentation
      Bangalore
    • Year and Date
      2007-10-09
    • Data Source
      KAKENHI-PROJECT-19206039
  • 1.  AIAWA Kouji (40222450)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 0 results
  • 2.  TOKUMITSU Eisuke (10197882)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 0 results
  • 3.  OHMI Shunーichiro (30282859)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 20 results
  • 4.  FURUKAWA Seijiro (60016318)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 5.  SASAKI Kimihiro (40162359)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 6.  ASANO Tanemasa (50126306)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 7.  澤岡 昭 (40029468)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 8.  OHMI Tadahiro (20016463)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 9.  TSUBOUTI Kazuo (30006283)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 10.  ASADA Kunihiro (70142239)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 11.  HORIIKE Yasuhiro (20209274)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 12.  KAMEYAMA Michitaka (70124568)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 13.  FUJISAKI Yoshihisa (00451013)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 10 results
  • 14.  YONETSU Hiroo (90191668)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  HO Kouichiro (60211538)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  AMEMIYA Yoshihiro (80250489)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  SHIBATA Tadashi (00187402)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  IWATA Atsushi (30263734)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  OKABE Youichi (50011169)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  YAMAKAWA Tsuyoshi (00005547)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 21.  YAMAMOTO Shuu'itiro (50313375)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  KOMA Atsushi (00010950)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 23.  TSUTSUI Kazuo (60188589)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  伊賀 健一 (10016785)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  小山 二三夫 (30178397)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 26.  下河辺 明 (40016796)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 27.  宮本 智之 (70282861)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 28.  中村 健太郎 (20242315)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 29.  馬場 俊彦 (50202271)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 30.  平本 俊郎 (20192718)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 31.  IWATA Yoshinori
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 32.  KATAHAMA Hisasi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 33.  KIJIMA Takeshi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 34.  方浜 久
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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