Ishitani Yoshihiro 石谷善博

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ISHITANI Yoshihiro 石谷善博

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Researcher Number	60291481
Other IDs
Affiliation (Current)	2025: 千葉大学, 大学院工学研究院, 教授
Affiliation (based on the past Project Information) *help	2024: 千葉大学, 大学院工学研究院, 教授 2017 – 2020: 千葉大学, 大学院工学研究院, 教授 2016: 千葉大学, 大学院工学研究科, 教授 2011 – 2016: 千葉大学, 工学(系)研究科(研究院), 教授 2014: 千葉大学, 大学院工学研究科, 教授 … More 2008 – 2011: 千葉大学, 大学院・工学研究科, 教授 2007 – 2008: 千葉大学, 大学院・工学研究科, 准教授 2006: 千葉大学, 工学部, 助教授 2001 – 2004: 千葉大学, 工学部, 助教授 Less
Review Section/Research Field	Principal Investigator Crystal engineering / Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Science and Engineering / Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering
Keywords	Principal Investigator 窒化物半導体 / フォノン / 励起子 / フォノン制御 / LOフォノン / キャリアダイナミクス / GaN / ラマン分光 / エネルギー局在 / 表面マイクロ構造 … More / ２波長ラマン分光 / 深い準位 / 励起子ダイナミクス / フォノン輸送 / 縦光学モード / THz輻射 / 顕微ラマン分光 / 励起子ダイダイナミクス / 格子欠陥 / 半導体物性 / フォノンダイナミクス / 光物性 / フォノンポラリトン / テラヘルツ波 / 量子干渉 / THz / 赤外分光 / 量子井戸 / 縦光学フォノン制御 / 電子散乱 / 発光効率 / PXRモデル / フォノン系量子干渉 / 局所フォノン場 / 励起子輻射 / フォノン輸送制御 / THz波 / 欠陥評価 / 欠陥構造 / 複合材料 / ミスフィット転位 / 共焦点ラマン散乱 / ラマン散乱 / 特異構造 / 中赤外発光 / 縦光学フォノン / 電気双極子 / 金属半導体複合構造 / ファノ効果 / 電磁誘起透明化 / LOフォノン共鳴 / 輻射 / 中赤外 / THz吸収 / 界面フォノンポラリトン / THz発光 / フォノン局在制御 / 時間分解計測 / 時間分解PL / 発光デバイス / 太陽電池 / 結晶工学 / 結晶欠陥 / フォノンエンジニアリング / プラズモン / ＬＯフォノン / 電気双極子モーメント / テラヘルツ / 半導体薄膜 / 界面モード / 半導体 / 界面分極 / 赤外光 / 正孔移動度 / カソードルミネッセンス / 正孔物性 / プラズモン・LOフォノン結合モード / 2次元電子ガス / 散乱異方性 / 電子移動度 / 高周波電子デバイス / 電子素子 / 赤外光物性 / 窒化インジウム / 結晶評価 / 時間分解フォトカレント / 時間分解フォトルミネッセンス / 輻射再結合 / 非輻射再結合 / 励起子・電子・正孔 / 衝突・輻射モデル / 内部電場 / SiC基板 / AlN … More Except Principal Investigator 窒化インジウム / 窒化物半導体 / ZnO / InN / AlN / GaN / Wide bandgap semiconductors / Crystal Polarity / Epitaxy / III-V nitrides / -族窒化物 / 分子線エピタキシー / 窒化カリウム / 酸化亜鉛 / 窒化アルミニュウム / 窒化ガリウム / ワイドギャップ化合物半導体 / 結晶極性 / エピタキシー / III-V族窒化物 / 太陽電池 / 薄膜・量子構造 / 貫通転位 / 分光エリプソメトリ / バンドパラメータ / 超格子・量子井戸 / 窒化インジウム(InN) / p型窒化インジウム / エピタキシ制御 / 空間・時間分解ルミネッセンス測定 / 光電子物性の赤外分光評価 / 超格子・量子構造 / 光物性・分光計測 / 短周期超格子 / MBE、エピタキシャル / ナノ構造光デバイス / 極広域分光計測 / 擬似混晶 / 超格子 / MBEエピタキシャル / ナノ構造デバイス / 表面・界面物性 / キャリアダイナミクス / 極広域分光 Less

Integrated control of optical and acoustic phonons for an inovative design of photonic and electronic devicesPrincipal Investigator
- Principal Investigator
  
  石谷善博
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Chiba University
Development of basic science and technology for nitride semiconductor optical devices by controlling phonon functionsPrincipal Investigator
- Principal Investigator
  
  Ishitani Yoshihiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Chiba University
Development of three dimensional spectroscopy of crystal singularity and defects and its application based on phonon sciencePrincipal Investigator
- Principal Investigator
  
  Ishitani Yoshihiro
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Chiba University
Study on THz light source using quantum interference in phonon systemPrincipal Investigator
- Principal Investigator
  
  Yoshihiro Ishitani
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Chiba University
Advanced research on semiconductor optical device materials by controlling phonon transport under non-thermal equilibrium statePrincipal Investigator
- Principal Investigator
  
  Ishitani Yoshihiro
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Chiba University
Development of Fundamental Technologies of III-Nitride Semiconductor Optical Devices with "1-monolayer" Quantum Well Structures
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  2011 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chiba University
Science of THz light source based on longitudinal phonon-plasmon coupled mode in nitride materialsPrincipal Investigator
- Principal Investigator
  
  ISHITANI Yoshihiro
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Chiba University
Study on carrier transport processes in InN by the developing of sensing method of mobility depth profile by infrared spectroscopyPrincipal Investigator
- Principal Investigator
  
  ISHITANI Yoshihiro
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Chiba University
Characterization of Nano-Device Structures of InN-based III-nitrides by Extremely Wide Range Spectroscopy
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Chiba University
III族窒化物結晶の分光計測における衝突・輻射モデルによる解析Principal Investigator
- Principal Investigator
  
  石谷善博
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chiba University
Study on the polarity control of hexagonal-structure widegap compound semiconductors and its effect on the material control
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  2001 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chiba University

[Book] 2020年度版　薄膜作製応用ハンドブック2020
- Author(s)
  分担執筆　石谷善博
- Publisher
  NTS
- Data Source
  KAKENHI-PROJECT-17H02772
[Book] 2020年度版　薄膜作製応用ハンドブック2020
- Author(s)
  分担執筆　石谷善博
- Total Pages
  13
- Publisher
  NTS
- Data Source
  KAKENHI-PLANNED-16H06425
[Book] Wide bandgap semiconductors2007
- Author(s)
  K.Takahashi, A.Yoshikawa, and A.Sandhu, 編集著者 : A.Yoshikawa Y.Ishitani, 他66名
- Publisher
  Springer Berlin
- Data Source
  KAKENHI-PLANNED-18069002
[Book] Wide bandgap semiconductors(K.Takahashi, A.Yoshikawa, A.Sandhu編集)2007
- Author(s)
  A.Yoshikawa, Y.Ishitani, 他66名
- Total Pages
  460
- Publisher
  Springer Berlin
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020
- Author(s)
  D. Uehara, M. Kikuchi, B. Ma, H. Miyake, Y. Ishitani
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 6 Pages: 061003-061003
- DOI
  10.35848/1882-0786/ab8c1c
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06425
[Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020
- Author(s)
  Daisuke Uehara, Moe Kikuchi, Bei Ma, Hideto Miyake, Yoshihiro Ishitani
- Journal Title
  
  Applied Physics Express
  
  Volume: Undecided
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02772
[Journal Article] Local heat energy transport analysis in GaInN/GaN heterostructures by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams2020
- Author(s)
  Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, Yoshihiro Ishitani
- Journal Title
  
  IPACK2020-2570
  
  Volume: V001T06A002
- DOI
  10.1115/ipack2020-2570
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425
[Journal Article] Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN2020
- Author(s)
  Ma Bei、Tang Mingchuan、Ueno Kohei、Kobayashi Atsushi、Morita Ken、Fujioka Hiroshi、Ishitani Yoshihiro
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 19 Pages: 192103-192103
- DOI
  10.1063/5.0023112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414, KAKENHI-PLANNED-16H06425
[Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020
- Author(s)
  Uehara Daisuke, Kikuchi Moe, Ma Bei, MIYAKE Hideto, Ishitani Yoshihiro
- Journal Title
  
  Applied Physics Express
  
  Volume: Undecided
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425
[Journal Article] Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers2020
- Author(s)
  Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita , Daisuke Iida, Kazuhiro Ohkawa, and　Yoshihiro Ishitani,
- Journal Title
  
  Applied Physics Letters,
  
  Volume: 116 Issue: 14 Pages: 142107-142107
- DOI
  10.1063/5.0003491
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772, KAKENHI-PLANNED-16H06425
[Journal Article] Statistics of excitonic energy states based on phononic-excitonic-radiative model2019
- Author(s)
  Yoshihiro Ishitani, kensuke Oki, and Hideto Miyake
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 未定 Issue: SC Pages: SCCB34-SCCB34
- DOI
  10.7567/1347-4065/ab09e2
- NAID
  210000156204
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-17H02772, KAKENHI-PLANNED-16H06415
[Journal Article] Influence of LO and LA phonon processes on thermal-nonequilibrium excitation and deexcitation dynamics of excitons in GaN, AlN, and ZnO2019
- Author(s)
  Kensuke Oki and Yoshihiro Ishitani
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 125 Issue: 20 Pages: 205705-205705
- DOI
  10.1063/1.5092620
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-17H02772
[Journal Article] Temperature and laser energy dependence of the electron g-factor in intrinsic InGaAs/InAlAs multiple quantum wells2019
- Author(s)
  K. Morita, A. Okumura, H. Takaiwa, I. Takazawa, T. Oda, T. Kitada, M. Kohda, and Y. Ishitani
- Journal Title
  
  Applied Physics Letters,
  
  Volume: 115 Issue: 1 Pages: 012404-012404
- DOI
  10.1063/1.5100343
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-15H05854, KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-15H02099, KAKENHI-PROJECT-17H02772, KAKENHI-PROJECT-15H05699
[Journal Article] Terahertz pulse generation by the tilted pulse front technique using an M-shaped optical system2018
- Author(s)
  Ken Morita, Kento Shiozawa, Koji Suizu, and Yoshihiro Ishitani
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 5 Pages: 050304-050304
- DOI
  10.7567/jjap.57.050304
- NAID
  210000149033
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-17H02795
[Journal Article] Selective thermal radiation at the longitudinal optical phonon energy under geometric condition of metal-semiconductor mesa stripe structures2018
- Author(s)
  Yoshihiro Ishitani, Tomoyuki Aoki, Hidenori Funabashi, and Ken Morita
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Issue: 19 Pages: 192105-192105
- DOI
  10.1063/1.5047458
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-17H02772, KAKENHI-PROJECT-17H02795
[Journal Article] Population decay and distribution of exciton states analyzed by rate equations based on theoretical phononic and electron-collisional rate coefficients2017
- Author(s)
  Kensuke Oki, Bei Ma, and Yoshihiro Ishitani
- Journal Title
  
  Physical Review B
  
  Volume: 96 Issue: 20
- DOI
  10.1103/physrevb.96.205204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K17511, KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-17H02772
[Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon;-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures2017
- Author(s)
  Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 51
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13345
[Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures2017
- Author(s)
  Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 51
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425
[Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures2017
- Author(s)
  Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 51
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02772
[Journal Article] Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga0.5In0.5P films2016
- Author(s)
  Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 49 Issue: 37 Pages: 375107-375107
- DOI
  10.1088/0022-3727/49/37/375107
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-16K17511
[Journal Article] Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga0.5In0.5P films2016
- Author(s)
  Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 49
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13345
[Journal Article] Excitation and de-excitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states2016
- Author(s)
  Yoshihiro Ishitani, Kazuma Takeuchi, Naoyuki Oizumi, Hironori Sakamoto, Bei Ma, and Ken Morita, Hideto Miyake, and Kazumasa Hiramatsu
- Journal Title
  
  Journal of Physics D
  
  Volume: 49 Issue: 24 Pages: 245102-245102
- DOI
  10.1088/0022-3727/49/24/245102
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-16K17511, KAKENHI-PLANNED-16H06415
[Journal Article] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2016
- Author(s)
  Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FH02-05FH02
- DOI
  10.7567/jjap.55.05fh02
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-15K13345, KAKENHI-PROJECT-16K17511
[Journal Article] Theoretical investigation of non-thermal equilibrium exciton dynamics in GaN based on hydrogen plasma model2016
- Author(s)
  Tomohiro Iwahori, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FM06-05FM06
- DOI
  10.7567/jjap.55.05fm06
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-16K17511
[Journal Article] Dielectric absorption of s-polarized infrared light resonant to longitudinal optical phonon energy incident on lateral (0001)GaN/Ti stripe structures2015
- Author(s)
  Y. Ishitani, K. Hatta, K. Morita, and B. Ma
- Journal Title
  
  Journal of Physics D
  
  Volume: 48
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048
[Journal Article] Carrier dynamics and related electronic band properties of InN films2014
- Author(s)
  Y. Ishitani
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- NAID
  210000144514
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048
[Journal Article] Analysis of nouradiative carrier recombination processes in InN films by mid-infrared spectroscopy2013
- Author(s)
  Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwra, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 42 Issue: 5 Pages: 875-881
- DOI
  10.1007/s11664-013-2550-y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J04851, KAKENHI-PROJECT-23246056, KAKENHI-PROJECT-25286048
[Journal Article] Theoretical and experimental study of the optical absorption at longitudinal phonon or phonon-plasmon coupling mode ener gy : An example of GaN2012
- Author(s)
  Y. Ishitani
- Journal Title
  
  J. Appl. Phys
  
  Volume: 112 Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656010
[Journal Article] Theoretical and experimental study of the optical absorption at longitudinal phonon or phonon-plasmon coupling mode energy: An example of GaN2012
- Author(s)
  Yoshihiro Ishitani
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 112 Issue: 6
- DOI
  10.1063/1.4754555
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656010
[Journal Article] Carrierr ecombinat ion processes in Mg-doped N-polar InN films2012
- Author(s)
  D. Imai, Y . Ishitani, M. Fujiwara, X. Q. Wang, K. Kusakabe, and A. Yoshikawa
- Journal Title
  
  Physica Status Solidi
  
  Volume: B249 Pages: 472-475
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656010
[Journal Article] Electron and hole scattering in InN films investigated by infrared measurements2012
- Author(s)
  Yoshihiro Ishitani, et al.
- Journal Title
  
  physica status solidi (a)
  
  Volume: 207 Issue: 1 Pages: 56-64
- DOI
  10.1002/pssa.201100152
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246056
[Journal Article] Electron and hole scattering in InN films investigated by infrared measurements2012
- Author(s)
  Y . Ishitani, M. Fujiwara, D. Imai, K. Kusakabe, and A. Y oshikawa
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 207 Pages: 56-64
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656010
[Journal Article] Carrier recombination processes in Mg-doped N-polar InN films2011
- Author(s)
  D.Imai, Y.Ishitani,\, M.Fujiwara, X.Q.Wang, K.Kusakabe, A.Yoshikawa,
- Journal Title
  
  Applied Physics Letters
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Carrier recombination processes in Mg-doped N-polar InN films2011
- Author(s)
  D.Imai, Y.Ishitani, M.Fujiwara, X.Q.Wang, K.Kusakabe, A.Yoshikawa
- Journal Title
  
  Applied Physics Letters 98
  
  Pages: 181901-181901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Anomalous Hall mobility kink observed in Mg-doped InN : Demonstration of p-type conduction2010
- Author(s)
  N.Ma, X.Q.Wang, F.J.Xu, N.Tang, B.Shen, Y.Ishitani, Yoshikawa
- Journal Title
  
  Applied Physics Letters 97
  
  Pages: 222114-222114
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy2010
- Author(s)
  A.Yoshikawa, X.Wang, Y.Ishitani, A.Uedono
- Journal Title
  
  phys.stat.sol.(a) 207(5)
  
  Pages: 1011-1023
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs2009
- Author(s)
  A.Yoshikawa, S.B.Che, Y.Ishitani, X.Wang
- Journal Title
  
  J.Crystal Growth 311(7)
  
  Pages: 2073-2073
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Lattice polarity detection of InN by circular photogalvanic effect2009
- Author(s)
  Q.Zhang, X.Wang, Y.Ishitani, A.Yoshikawa, 他6名
- Journal Title
  
  Appl.Phys.Lett. 95
  
  Pages: 31902-31902
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] InNの結晶欠陥とキャリアダイナミクス2009
- Author(s)
  石谷善博,藤原昌幸,吉川明彦
- Journal Title
  
  日本結晶成長学会誌 36
  
  Pages: 45-53
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Lattice polarity detection of InN by circular photogalvanic effect2009
- Author(s)
  Q.Zhang, X.Wang, X.W.He, C.M.Yin, F.J.Xu, B.Shen, Y.H.Chen, Z.G.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Applied Physics Letters 95
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] InNの結晶欠陥とトキャリアダイナミクス2009
- Author(s)
  石谷善博
- Journal Title
  
  日本結晶成長学会誌 36
  
  Pages: 45-53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation2009
- Author(s)
  A.Uedono, X.Wang, Y.Ishitani, A.Yoshikawa, 他5名
- Journal Title
  
  J.Appl.Phys. 105
  
  Pages: 54507-54507
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Carrier recombination processes in In-polar n-InN in regions of low residual electron density2009
- Author(s)
  石谷善博
- Journal Title
  
  Journal of Applied Physics 106
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Carrier recombination processes in In-polar n-InN in regions of low residual electron density2009
- Author(s)
  Y.Ishitani, K.Kato, H.Ogiwara, S.B.Che, A.Yoshikawa
- Journal Title
  
  106
  
  Pages: 113515-113515
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Carrier recombination processes in In-polar n-InN in regions of low residual electron density2009
- Author(s)
  石谷善博
- Journal Title
  
  Journal of Applied Physics 106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties2009
- Author(s)
  Y.Ishitani
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region2009
- Author(s)
  S.B.Che, A.Yuki, H.Watanabe, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 21001-21001
- NAID
  10025084321
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties2009
- Author(s)
  Y. Ishitani
- Journal Title
  
  Physica Status Solidi C 104
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] InNの結晶欠陥とキャリアダイナミクス2009
- Author(s)
  石谷善博
- Journal Title
  
  日本結晶成長学会誌 36
  
  Pages: 45-53
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties2009
- Author(s)
  石谷善博
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Carrier recombination processes in In-polar n-InN in regions of low residual electron density2009
- Author(s)
  Y.Ishitani, K.Kato, H.Ogiwara, S.B.Che, A.Yoshikawa, X.Wang
- Journal Title
  
  Journal of Applied Physics 106
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Carrier recombination processes in In-polar n-InN in regions of low residual electron density2009
- Author(s)
  Y.Ishitani
- Journal Title
  
  Journal of Applied Physics 106
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties2009
- Author(s)
  Y.Ishitani, M.Fujiwara, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Physica Status Solidi (c) 6
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] InNの結晶欠陥とキャリアダイナミクス2009
- Author(s)
  石谷善博, 藤原昌幸, 吉川明彦
- Journal Title
  
  日本結晶成長学会誌 36
  
  Pages: 45-45
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Infrared analysis of hole properties of Mg-doped p-type InN films2008
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, S.B.Che, and A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 93
  
  Pages: 231903-231903
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Hole mobility in Mg-doped p-type InN films2008
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 92
  
  Pages: 132108-132108
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Bowing of the band gap pressure coefficient in In_xGa_<1-x>N alloys2008
- Author(s)
  G.Franssen, Y.Ishitani, A.Yoshikawa, 他10名
- Journal Title
  
  J.Appl.Phys. 103
  
  Pages: 33514-33514
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region2008
- Author(s)
  Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Journal of Applied Physics 103
  
  Pages: 53515-53515
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region2008
- Author(s)
  Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  J.Appl.Phys. 103
  
  Pages: 53515-53515
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region2008
- Author(s)
  Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Journal of Applied Physics 103
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix2008
- Author(s)
  A.Yoshikawa, Y.Ishitani, X.Wang, 他3名
- Journal Title
  
  J.Vac.Sci.Tech. B26
  
  Pages: 1551-1551
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Anisotropic damping of longitudinal optical phonon-plasmon coupling modes of InN films2008
- Author(s)
  Y. Ishitani
- Journal Title
  
  Applied Physics Letters 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Infrared analysis of Mg-doped p-type InN films2008
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 93
  
  Pages: 231903-231903
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Anisotropic damping of longitudinal optical phonon-plasmon coupling modes of InN films2008
- Author(s)
  Y.Ishitani
- Journal Title
  
  Applied Physics Letters 92
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Conduction band filling in In-rich InGaN and InN under hydrostatic pressure2008
- Author(s)
  G.Franssen, A.Kaminska, T.Suski, I.G.Franssen, A.Kaminska, T.Suski, I.Gorczyca, A.Svane, H.Lu, W.J.Schaff, E.Dimakis, A.Georgakilas, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 1488-1490
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Hole mobility in Mg-doped p-type InN films2008
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Applied Physics Letters 92
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Hole mobility in Mg-doped p-type InN films2008
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Applied Physics Letters 92
  
  Pages: 132108-132108
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of electron distribution in InN films on infrared reflectance spect rum of longitudinal optical phonon-plasmon interaction region2008
- Author(s)
  Y. Ishitani
- Journal Title
  
  Journal of Applied Physics 103
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Infrared analysis of hole properties of Mg-doped p-type InN films2008
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Applied Physics Letters 93
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Anisotropic damping of longitudinal optical phonon-plasmon coupling modes of InN films2008
- Author(s)
  Y.Ishitani, M.Fujiwara, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 92
  
  Pages: 251901-251901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Anisotropic damping of longitudinal optical phonon-plasmon coupling modes of InN films2008
- Author(s)
  Y.Ishitani, M.Fujiwara, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Applied Physics Letters 92
- Data Source
  KAKENHI-PROJECT-20560005
[Journal Article] Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages: 242111-242111
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Threading dislocations in In-polar InN films and their effects on surface morphology and electrical properties2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 90
  
  Pages: 151901-151901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Growth and properties of Mg-doped In-polar InN films2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 90
  
  Pages: 201913-201913
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Alloy composition fluctuation and band edge energy structure of In-rich InxGal-xN layers investigated by systematic spectroscy2007
- Author(s)
  Y. Ishitani
- Journal Title
  
  Physica Status Solidi(c) 4
  
  Pages: 2428-2432
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Polarity inversion in high Mg-doped In-polar InN epitaxial layers2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa, H.Sasaki, T.Shinagawa, S.Yoshida
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages: 81912-81912
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication and properties of coherent-structure In-polarity InN /In_<0.7>Ga_<0.3>N multi-quantum wells emitting at around 1.55μm2007
- Author(s)
  S.B.Che, T.Mizuno, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  J.Appl.Phys. 102
  
  Pages: 83539-83539
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of one monolayer and fractional monolayer InN wells inserted in GaN matrix2007
- Author(s)
  A.Yoshikawa, S.B.Che, W.Yamaguchi, H.Saito, X.Wang, Y.Ishitani, E.S.Hwang
- Journal Title
  
  Appl.Phys.Lett. 90
  
  Pages: 73101-73101
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Broadening factors of E1(LO) phonon-plasmon coupled modes of hexagonal InN investigated by infrared reflectance measurements2007
- Author(s)
  Y.Ishitani, T.Ohira, X.Q.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Physical Review B 76
  
  Pages: 45206-45206
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  J.Cryst.Growth 301/302
  
  Pages: 496-496
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Broadening factors of E1(LO)phonon-plasmon coupled modes of hexagonal InN investigated by infrared reflectance measurements2007
- Author(s)
  Y. Ishitani
- Journal Title
  
  Physical Review B 76
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of precise control of V/III ratio on In-rich InGaN epitaxial growth2006
- Author(s)
  S.B.Che, T.Shinada, T.Mizuno, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018460978
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy2006
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Journal of Applied Physics 90
  
  Pages: 73512-73512
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Step-flow growth of In-polar InN by molecular beam epitaxy2006
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10017653670
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Conduction and valence band edge properties of hexagonal InN characterized by optical measurements2006
- Author(s)
  Y.Ishitani
- Journal Title
  
  Physica Status Solidi (c) Vol. 3, (6)
  
  Pages: 1850-1853
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Bandgap energy of InN and its temperature dependence2005
- Author(s)
  Y.Ishitani, H.Masuyama, W.Terashima, M.Yoshitani, N.Hashimoto, S.B.Che, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.2, No.7
  
  Pages: 2276-2280
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Influence of Al-preflow in MOVPE-grown GaN films analysed by X-ray reciprocal space map2005
- Author(s)
  B.W.Seo, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.2, No.2
  
  Pages: 2353-2356
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy2005
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-Hwan Roh, Masayuki Ohsugi, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. Vol.86
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Bandgap energy of InN and its temperature dependence2005
- Author(s)
  Y.Ishitani
- Journal Title
  
  phys.stat.sol.(c) (未定)
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Influence of Al-preflow in MOVPE-grown GaN films analysed by X-ray reciprocal space map2005
- Author(s)
  B.W.Seo, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.2,No.2
  
  Pages: 2353-2356
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Bandgap energy of InN and its temperature dependence2005
- Author(s)
  Y.Ishitani, H.Masuyama, W.Terashima, M.Yoshitani, N.Hashimoto, S.B.Che, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.2,No.7
  
  Pages: 2276-2280
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE2005
- Author(s)
  S.B.Che, W.Terashima, T.Ohkubo, M.Yoshitani, N.Hashimoto, K.Akasaka, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.2, No.7
  
  Pages: 2258-2262
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Device-Quality Thick InN Epilayers ; Comparison between N-polarity and In-polarity Growth Processes2005
- Author(s)
  A.Yoshikawa, Y.Ishitani, S.B.Che, K.Xu, X.Wang, M.Yoshitani, W.Terashima, N.Hashimoto
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831, E4.1
  
  Pages: 1-13
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Device-Quality Thick InN Epilayers ; Comparison between N-polarity and In-polarity Growth Processes2005
- Author(s)
  A.Yoshikawa, Y.Ishitani, S.B.Che, K.Xu, X.Wang, M.Yoshitani, W.Terashima, N.Hashimoto
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy2005
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-Hwan Roh, Masayuki Ohsugi, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. Vol.86, 01192
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy2005
- Author(s)
  Song-Bek Che, Wataru Terashima, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. (in press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE2005
- Author(s)
  S.B.Che, W.Terashima, T.Ohkubo, M.Yoshitani, N.Hashimoto, K.Akasaka, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.2,No.7
  
  Pages: 2258-2262
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire2005
- Author(s)
  N.Hashimoto, N.Kikuwaka, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831, E4.4
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire2005
- Author(s)
  N.Hashimoto, N.Kikuwaka, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy2005
- Author(s)
  A.Yoshikawa, N.Hashimoto, N.Kikukawa, S.B.Che, Y.Ishitani
- Journal Title
  
  Appl.Phys.Lett. Vol.86
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE-grown ZnO films on sapphire substrate with double buffer layers2004
- Author(s)
  Xinqiang Wang, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.1 No.4
  
  Pages: 1022-1025
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE growth and characterization of hexagonal ZnCdMgSe layers and ZnCdSe/ZnCdMgSe QW structures on GaAs (111) substrates2004
- Author(s)
  S.Suzuki, Y.Kaifuchi, H.Kumada, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241,No.3
  
  Pages: 475-478
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Optical characterization of hexagonal CdS layers grown on GaAs (111) by MBE : application of phase-shift-difference spectroscopy2004
- Author(s)
  S.Suzuki, Y.Takazawa, H.Kumada, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.1,No.4
  
  Pages: 657-661
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Properties of fundamental absorption edge of InN crystal investigated by optical reflection and transmission spectra2004
- Author(s)
  Y.Ishitani, K.Xu, Che Song-Bek, H.Masuyama, W.Terashima, M.Yoshitani, N.Hashimoto, K.Akasaka, T.Okubo, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241
  
  Pages: 2849-2853
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE-grown ZnO films on sapphire substrate with double buffer layers2004
- Author(s)
  Xinqiang Wang, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.1, No.4
  
  Pages: 1022-1025
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE growth and characterization of hexagonal ZnCdMgSe layers and ZnCdSe/ZnCdMgSe QW structures on GaAs (111) substrates2004
- Author(s)
  S.Suzuki, Y.Kaifuchi, H.Kumada, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241, No.3
  
  Pages: 475-478
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Rotation-domains suppression and polarity control of ZnO epilayers grown on skillfully treated C-Al_2O_3 surfaces2004
- Author(s)
  A.Yoshikawa, X.Wang, Y.Tomita, Ok-Hwan Roh, H.Iwaki, Y.Ishitani
- Journal Title
  
  phys.stat.sol.(b) Vol.241,No.3
  
  Pages: 620-623
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy2004
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-hwan Roh, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43,No.6A
- NAID
  10013097096
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy2004
- Author(s)
  O.H.Roh, Y.Tomita, M.Ohsugi, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241, no.12
  
  Pages: 2835-2838
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy2004
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-hwan Roh, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43, No.6A
- NAID
  10013097096
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Temperature dependence of the optical properties of InN films grown by RF-MBE2004
- Author(s)
  Y.Ishitani, K.Xu, H.Masuyama, W.Terashima, N.Hashimoto, M.Yoshitani, Che Song-Bek, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.798
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Temperature dependence of the optical properties of InN films grown by RF-MBE2004
- Author(s)
  Y.Ishitani, K.Xu, H.Masuyama, W.Terashima, N.Hashimoto, M.Yoshitani, Che Song-Bek, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.798, Y12.5
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Optical characterization of hexagonal CdS layers grown on GaAs (111) by MBE : application of phase-shift-difference spectroscopy2004
- Author(s)
  S.Suzuki, Y.Takazawa, H.Kumada, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.1, No.4
  
  Pages: 657-661
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy2004
- Author(s)
  O.H.Roh, Y.Tomita, M.Ohsugi, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241,No.12
  
  Pages: 2835-2838
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] In-situ spectroscopic ellipsometry investigation and control of GaN growth mode in metalorganic vapor phase epitaxy at low pressures of 20 Torr2004
- Author(s)
  B.Cao, K.Xu, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Thin Solid Films Vol.455-456
  
  Pages: 661-664
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Rotation-domains suppression and polarity control of ZnO epilayers grown on skillfully treated C-Al_2O_3 surfaces2004
- Author(s)
  A.Yoshikawa, X.Wang, Y.Tomita, Ok-Hwan Roh, H.Iwaki, Y.Ishitani
- Journal Title
  
  phys.stat.sol.(b) Vol.241, No.3
  
  Pages: 620-623
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Comparative Study of InN Growth on Ga- and N-polarity GaN Template by Molecular-beam epitaxy2003
- Author(s)
  K.Xu, W.Terashima, T.Hara, N.Hashimoto, M.Yoshitani, B.Cao, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.sata.sol.(c) vol.0,No.7
  
  Pages: 2814-2817
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Improved crystallinity and polarity manipulation of MOVPE-grown GaN epilayers with deep sapphire-nitridation followed by Al-preflow at high temperatures2003
- Author(s)
  B.W.Seo, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2570-2574
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Improved crystallinity and polarity manipulation of MOVPE-grown GaN epilayers with deep sapphire-nitridation followed by Al-preflow at high temperatures2003
- Author(s)
  B.W.Seo, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2570-2574
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface2003
- Author(s)
  Xinqiang Wang, H.Iwaki, M.Murakami, XiaolongDu, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part2 No.2A
- NAID
  80015838068
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Dependences of GaN polarity on the growth temperatures of migration-enhanced-epitaxy-grown Al1N in MOVPE2003
- Author(s)
  B.Cao, K.Xu, B.W.Seo, S.Arita, S.Nishida, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2553-2556
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN Project as CREST Program of JST : New evolution in Nano-processes/Nano-devices Focused on MBE-grown InN-based □-Nitrides2003
- Author(s)
  A.Yoshikawa, Y.Ishitani, K.Xu
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 31-31
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface2003
- Author(s)
  Xinqiang Wang, H.Iwaki, M.Murakami, Xiaolong Du, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, Part2 No.2A
- NAID
  80015838068
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE-grown ZnO films on sapphire with GaN buffer layer2003
- Author(s)
  Xinqiang Wang, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 304-304
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Optical Properties of Hexagonal CdS Layers Grown on GaAs (111)B2003
- Author(s)
  S.Suzuki, H.Kumada, Y.Kaifuchi, Y.Takazawa, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 314-317
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Growth and Properties of InN Epilayers by RF-MBE with In-situ Monitoring by RHEED, Spectroscopic Ellipsometry, and CAICISS2003
- Author(s)
  K.Xu, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 33-33
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Infrared measurements of InN films at low temperatures2003
- Author(s)
  Y.Ishitani, K.Xu, W.Terashima, N.Hashimoto, M.Yoshitani, T.Hata, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2838-2841
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Dependences of GaN polarity on the growth temperatures of migration-enhanced-epitaxy-grown AIN in MOVPE2003
- Author(s)
  B.Cao, K.Xu, B.W.Seo, S.Aria, S.Nishida, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2553-2556
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] High-quality and thick InN films grown on 2-inch sapphire substrate by molecular-beam epitaxy2003
- Author(s)
  K.Xu, N.Hashimoto, B.Cao, T.Hata, W.Terashima, M.Yoshitani, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No7
  
  Pages: 2790-2793
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Step flow growth procedure for AIN layer on 6H-SiC substrate by MOVPE2003
- Author(s)
  Y.Ishitani, Y.Arita, N.Yoshida, H.Masuyama, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 284-287
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] High-quality and thick InN films grown on 2-inch sapphire substrate by molecular-beam epitaxy2003
- Author(s)
  K.Xu, N.Hashimoto, B.Cao, T.Hata, W.Terashima, M.Yoshitani, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2790-2793
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN Project as CREST Program of JST : New evolution in Nano-processes/Nano-devices Focused on MBE-grown InN-based III-Nitrides2003
- Author(s)
  A.Yoshikawa, Y.Ishitani, K.Xu
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 31-31
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Infrared measurements of InN films at low temperatures2003
- Author(s)
  Y.Ishitani, K.Xu, W.Terashima, N.Hashimoto, M.Yoshitani, T.Hata, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2838-2841
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth of Hexagonal CdS on GaAs (111)B Substrate2003
- Author(s)
  H.Kumada, S.Suzuki, Y.Kaifuchi, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 312-313
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Comparative Study of InN Growth on Ga-and N-polarity GaN Templates by Molecular-Beam Epitaxy2003
- Author(s)
  K.Xu, W.Terashima, T.Hata, N.Hashimoto, M.Yoshitani, B.Cao, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2814-2817
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film2002
- Author(s)
  Xiaolong Du, M.Murakami, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.41, Part2 No.10A
- NAID
  110006350818
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates2002
- Author(s)
  S.Suzuki, T.Nemoto, Y.Kaifuchi, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(a) Vol.192,No.1
  
  Pages: 195-200
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Step-Flow Growth of InN on N-Polarity GaN Template by Molecular Beam Epitaxy with Growth Rate of 1.3μm/h2002
- Author(s)
  K.Xu, W.Terashima, T.Hata, N.Hashimoto, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.1
  
  Pages: 377-381
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Step-Flow Growth of InN on N-Polarity GaN Template by Molecular Beam Epitaxy with Growth Rate of 1.3 μm/h2002
- Author(s)
  K.Xu, W.Terashima, T.Hata, N.Hashimoto, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.1
  
  Pages: 377-381
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates2002
- Author(s)
  S.Suzuki, T.Nemoto, Y.Kaifuchi, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(a) Vol.192, No.1
  
  Pages: 195-200
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film2002
- Author(s)
  Xiaolong Du, M.Murakami, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.41,Part2 No.10A
- NAID
  110006350818
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Bowing of the band gap pressure coefficient in InxGa1-xN alloys ournal of Applied Physics 103 2008 033514-(1-6)
- Author(s)
  G.Franssen, I.Gorczyca, T.Suski, A.Kaminska, J.Pereiro, E.Munoz, E.Illiopoulos, A.Georgakilas, S.B.Che, Y.Ishitani, A.Yoshikawa, N.E.Christensen
- Data Source
  KAKENHI-PROJECT-20560005
[Patent] 赤外光素子2016
- Inventor(s)
  石谷善博
- Industrial Property Rights Holder
  石谷善博
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-144974
- Filing Date
  2016-07-23
- Data Source
  KAKENHI-PROJECT-15K13345
[Patent] 赤外光素子2016
- Inventor(s)
  石谷善博
- Industrial Property Rights Holder
  石谷善博
- Industrial Property Rights Type
  特許
- Filing Date
  2016-07-23
- Data Source
  KAKENHI-PLANNED-16H06425
[Patent] 光電変換装置2013
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-238746
- Filing Date
  2013-11-19
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 光電変換装置2013
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-238747
- Filing Date
  2013-11-19
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 半導体光素子2012
- Inventor(s)
  崔　成伯、石谷　善博、吉川　明彦
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Filing Date
  2012-12-30
- Acquisition Date
  2014-06-20
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] PHOTOELECTRIC CONVERSION DEVICE AND CHARACTERISTIC INSPECTION METHOD FOR SAME2012
- Inventor(s)
  A.Yoshikawa, Y.Ishitani, K.Kusakabe
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2012-03-02
- Overseas
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] PHOTOELECTRIC CONVERSION DEVICE2012
- Inventor(s)
  A.Yoshikawa, Y.Ishitani, K.Kusakabe
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2012-03-02
- Overseas
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 半導体光素子2012
- Inventor(s)
  崔成伯，石谷善博，吉川明彦
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-289267
- Filing Date
  2012-12-30
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 光電変換装置2011
- Inventor(s)
  吉川明彦、草部一秀、石谷善博
- Industrial Property Rights Holder
  吉川明彦、草部一秀、石谷善博
- Filing Date
  2011-02-28
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2011
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2011-03-14
- Overseas
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2011
- Inventor(s)
  吉川明彦、草部一秀、石谷善博
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2011-06-17
- Overseas
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 光電変換装置2011
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2011-03-14
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-08-05
- Overseas
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-08-05
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-08-05
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-08-05
- Overseas
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-06-18
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2009
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Industrial Property Number
  2009-183263
- Filing Date
  2009-08-06
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置及びその特性検査方法2009
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Industrial Property Number
  2010-055388
- Filing Date
  2009-03-12
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2009
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Industrial Property Number
  2009-185425
- Filing Date
  2009-08-06
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 半導体素子、光スイッチング素子及び量子カスケードレーザ素子2006
- Inventor(s)
  崔成伯, 吉川明彦, 石谷善博
- Industrial Property Rights Holder
  千葉大学学長
- Filing Date
  2006-06-19
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 半導体光素子2006
- Inventor(s)
  崔成伯, 石谷善博, 吉川明彦
- Industrial Property Rights Holder
  千葉大学学長
- Filing Date
  2006-05-17
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Characterization of heavily sillion doped GaN using infrared reflectance and Raman spectroscopy2021
- Author(s)
  Bei Ma, Mingchuan Tang, Kohei Ueno, Atsushi Kobayashi, Ken Morita, Hiroshi Fujioka, and Yoshihiro Ishitani
- Organizer
  8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Mechanism of Exciton Radiative LifetimeReduction by Background ElectronsAnalyzed by Phononic-Excitonic-Radiative Model2021
- Author(s)
  M. Chizaki, K. Oki, and Y. Ishitani
- Organizer
  8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Longitudinal Optical Phonon Resonant THz- Mid Infrared Radiation from Surface Metal-Semiconductor Microstructures2021
- Author(s)
  Y. Ishitani, Bei Ma, Kensuke Oki, Ken Morita
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Requirement of phonon control in electronic and photonic devices and mode-separated phonon transport analysis in heterostructures using microscopic Raman scattering measurement using double lasers2021
- Author(s)
  Y. Ishitani, S. Okamoto, M. Chizaki, K. Oki, B. Ma, B.-J. Lin, K. Morita, D. Iida, and K. Ohkawa
- Organizer
  8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis2021
- Author(s)
  Y. Ishitani, K. Oki, M. Chizaki, S. Okamoto, T. Nakayama, B. Lin, B. Ma, K. Morita, H. Miyake , D. Iida , and K. Ohkawa
- Organizer
  SPIE, Photonic West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Raman scattering of Si-doped GaN film at cross-section2021
- Author(s)
  Bei Ma, Mingchuan Tang, Kohei Ueno, Atsushi Kobayashi, Ken Morita, Hiroshi Fujioka, and Yoshihiro Ishitani
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] ｎ型間接遷移半導体GaP表面マイクロストライプ構造による中赤外輻射2020
- Author(s)
  林鴻太朗, 田中大智, 海老澤啓介, 相原　望, 米本拓郎，Hnin Lai Lai Aye, 森田　健, 馬　ベイ, 石谷善博
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Longitudinal Optical Phonon Resonant THz -Mid Infrared Radiation From Surface Metal-Semiconductor Microstructures2020
- Author(s)
  K. Hayashi, D. Tanaka, K. Ebisawa, N. Aihara, T. Yonemoto, H. L. L. Aye, B. Lin, B. Ma, K. Morita, and Y. Ishitani
- Organizer
  IRMMW-THz
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] ｎ型間接遷移半導体GaP表面マイクロストライプ構造による中赤外輻射2020
- Author(s)
  林鴻太朗, 田中大智, 海老澤啓介, 相原　望, 米本拓郎，Hnin Lai Lai Aye, 森田　健, 馬　ベイ, 石谷善博
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] フォノン輸送のミクロ評価と発光効率への影響2020
- Author(s)
  石谷善博
- Organizer
  第81回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] n型間接遷移半導体GaP表面マイクロストライプ構造における中赤外吸収・輻射スペクトル解析2020
- Author(s)
  林鴻太朗, 相原望, 森田健, 馬ベイ, 石谷善博
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Local heat energy transport analysis in GaInN/GaN heterostructure by microscopic imaging exploiting simultaneous irradiation of two laser beams2020
- Author(s)
  S. Okamoto, N. Saito, K. Ito, B. Ma, K. Morita, D. Iida, K. Ohkawa, Y. Ishitani
- Organizer
  InterPack2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Structure dependence of LO phonon radiation using GaAs/metal microstructure stripe structures2020
- Author(s)
  Hnin Lai Lai Aye, K. Hayashi, B. Ma, K. Morita, and Y. Ishitani
- Organizer
  第68回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 間接遷移半導体GaP表面マイクロメサストライプ構造における中赤外吸収・輻射スペクトル解析2020
- Author(s)
  林鴻太朗, 関川康太, 折戸春樹, 相原望, 馬ベイ, 森田健, 石谷善博
- Organizer
  第68回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 電子‐フォノン相互作用およびフォノン輸送のミクロ評価2020
- Author(s)
  石谷善博
- Organizer
  第67回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 高SiドープGaN薄膜の断面ラマン測定2020
- Author(s)
  馬ベイ，湯明川，森田健，上野耕平，小林篤，藤岡洋，石谷善博
- Organizer
  第68回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] フォノン・励起子・輻射モデルによる励起子輻射寿命の制御の提案2020
- Author(s)
  地﨑匡哉，大木健輔，石谷善博
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 電子‐フォノン相互作用およびフォノン輸送のミクロ評価2020
- Author(s)
  石谷善博
- Organizer
  第67回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 輻射性励起子減衰寿命の温度依存性への非輻射再結合の影響2020
- Author(s)
  地﨑匡哉，大木健輔，馬ベイ，森田健，石谷善博
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 輻射性励起子減衰寿命の温度依存性への非輻射再結合の影響2020
- Author(s)
  地﨑匡哉，大木健輔，馬ベイ，森田健，石谷善博
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] LO phonon resonant mid-IR emission from surface-metal structures on indirect electronic transition type semiconductors2020
- Author(s)
  K. Hayashi, N. Orito, K. Sekigawa, N. Aihara, M. Bei, K. Morita, Y. Ishitani
- Organizer
  フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaInN薄膜における膜内フォノン輸送過程の2波長同時照射ラマン分光法による解析2020
- Author(s)
  中山朋哉，伊藤航太郎，岡本駿吾，馬ベイ, 森田健,飯田大輔，大川和宏,石谷善博
- Organizer
  第68回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] フォノン・励起子・輻射モデルによる励起子発光速度の決定機構の解析2020
- Author(s)
  地﨑匡哉，大木健輔，石谷善博
- Organizer
  第68回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Analysis of phonon transport at GaInN/GaN heterointerfaces by Raman spectroscopy using simultaneous irradiation of two lasers2020
- Author(s)
  S. Okamoto, K. Ito, D. Iizasa, B. Ma, K. Morita, Y. Ishitani
- Organizer
  フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNの深い準位の直接光励起による発光特性の考察2019
- Author(s)
  菊地　萌，上原大輔，馬ベイ, 森田健,三宅秀人，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaAs-金属ストライプ構造からのLOフォノン共鳴赤外輻射特性の構造依存性2019
- Author(s)
  海老澤　啓介，馬ベイ，森田健，大木健輔，石谷善博
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Local phonon analysis in InGaN film by mapping of Raman spectroscopy2019
- Author(s)
  Shungo Okamoto, Naomichi Saito, Bei Ma, Kensuke Oki, and Ken Morita, Kazuhiro Ohkawa, and Yoshihiro Ishitani
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] ２波長ラマン分光を用いたフォノン輸送評価における測定モード依存性2019
- Author(s)
  岡本駿吾，伊藤航太郎，馬ベイ，森田健，飯田大輔，大川和宏，石谷善博
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Microscopic analysis of heat transport at GaInN/GaN heterointerface with misfit dislocations by two-wavelength Raman measurements2019
- Author(s)
  Shungo Okamoto, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, and Yoshihiro Ishitani
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaAs-金属ストライプ構造からのLOフォノン共鳴赤外輻射特性の構造依存性2019
- Author(s)
  海老澤　啓介，田中　大智，森田　健，馬　ベイ，石谷善博
- Organizer
  第3回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Longitudinal Optical Phonon Resonating Dipole Radiation from Metal- Semiconductor Composite Structures and Quantum Interference2019
- Author(s)
  Yoshihiro Ishitani, Keisuke Ebisawa, Daichi Tanaka, Nozomi Aihara, Bei Ma, and Ken Morita
- Organizer
  IRMMW-THz 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 高濃度SiドープGaNの深さ方向結晶性の赤外およびラマン分光評価2019
- Author(s)
  湯　明川，馬ベイ,　森田健,上野耕平,小林　篤，藤岡洋，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 小型フーリエ変換赤外分光装置の製作と測定法の確立2019
- Author(s)
  中山政裕，菅野裕吾，石谷善博，北田貴弘，森田健
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2019
- Author(s)
  大木健輔，野町健太郎，西川智秀，馬ベイ，森田健，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Deep level luminescence of HVPE grown GaN by below-bandgap photo-excitation2019
- Author(s)
  Daisuke Uehara, Moe Kikuchi, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitan
- Organizer
  ICNS-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 赤外及びラマン分光法による高密度SiドープGaN薄膜の評価2019
- Author(s)
  馬ベイ, 湯明川, 上野耕平, 小林篤, 藤岡洋, 石谷善博
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 価電子帯間遷移－2種LOフォノン系における量子干渉の理論解析2019
- Author(s)
  相原望，田中大智，森田健，馬ベイ，石谷善博
- Organizer
  第3回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Local phonon analysis in InGaN film by mapping of Raman spectroscopy2019
- Author(s)
  Shungo Okamoto, Naomichi Saito, Bei Ma, Kensuke Oki, and Ken Morita, Kazuhiro Ohkawa, and Yoshihiro Ishitani
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Analysis of emission characteristics of deep levels in GaN by direct photo excitation2019
- Author(s)
  Moe Kikuchi, Daisuke Uehara, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitani
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 2LOフォノン-価電子帯間電子遷移系量子干渉の理論解析2019
- Author(s)
  相原　望，田中大智，馬　ベイ，森田　健，石谷善博
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNの深い準位の直接光励起による発光特性の考察2019
- Author(s)
  菊地　萌，上原大輔，馬ベイ,　森田健,三宅秀人，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] ２波長ラマン分光を用いたフォノン輸送評価における測定モード依存性2019
- Author(s)
  岡本駿吾，伊藤航太郎，馬ベイ，森田健，飯田大輔，大川和宏，石谷善博
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 赤外及びラマン分光法による高密度SiドープGaN薄膜の評価2019
- Author(s)
  馬ベイ, 湯明川, 上野耕平, 小林篤, 藤岡洋, 石谷善博
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Analysis of highly Si-doped GaN using various lattice vibration modes observed by infrared and Raman spectroscopy2019
- Author(s)
  Bei Ma, Ming Chuan Tang, Ken Morita, Yoshihiro Ishitani, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka,
- Organizer
  International Conference on Nitride Semiconductors-13
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] LOフォノン-価電子帯間遷移の量子干渉による結晶評価2019
- Author(s)
  相原望, 田中大智, 森田健, 馬ベイ, 石谷善博
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 小型フーリエ変換赤外分光装置の製作と測定法の確立2019
- Author(s)
  中山政裕，菅野裕吾，石谷善博，北田貴弘，森田健
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] LOフォノン-価電子帯間遷移の量子干渉による結晶評価2019
- Author(s)
  相原望, 田中大智, 森田健, 馬ベイ, 石谷善博
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2019
- Author(s)
  大木健輔，野町健太郎，西川智秀，馬ベイ,　森田健，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Longitudinal Optical Phonon Resonating Dipole Radiation from Metal- Semiconductor Composite Structures and Quantum Interference2019
- Author(s)
  Yoshihiro Ishitani, Keisuke Ebisawa, Daichi Tanaka, Nozomi Aihara, Bei Ma, and Ken Morita
- Organizer
  IRMMW-THz 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Analysis of emission characteristics of deep levels in GaN by direct photo excitation2019
- Author(s)
  Moe Kikuchi, Daisuke Uehara, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitani
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] aAs-金属ストライプ構造からのLOフォノン共鳴赤外輻射特性の構造依存性2019
- Author(s)
  海老澤啓介，田中大智，森田健，馬ベイ，石谷善博
- Organizer
  第3回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Microscopic analysis of heat transport at GaInN/GaN heterointerface with misfit dislocations by two-wavelength Raman measurements2019
- Author(s)
  Shungo Okamoto, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, and Yoshihiro Ishitani
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 2LOフォノン-価電子帯間電子遷移系量子干渉の理論解析2019
- Author(s)
  相原　望，田中大智，馬　ベイ，森田　健，石谷善博
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 価電子帯間遷移－2種LOフォノン系における量子干渉の理論解析2019
- Author(s)
  原　望，田中大智，森田　健，馬　ベイ，石谷善博
- Organizer
  第3回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Deep level luminescence of HVPE grown GaN by below-bandgap photo-excitation2019
- Author(s)
  Daisuke Uehara, Moe Kikuchi, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitani
- Organizer
  International Conference on Nitride Semiconductors-13
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 濃度SiドープGaNの深さ方向結晶性の赤外およびラマン分光評価2019
- Author(s)
  湯　明川，馬ベイ，森田健,上野耕平,小林　篤，藤岡洋，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Analysis of highly Si-doped GaN using various lattice vibration modes observed by infrared and Raman spectroscopy2019
- Author(s)
  Bei Ma, Ming Chuan Tang, Ken Morita, Yoshihiro Ishitani, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
- Organizer
  ICNS-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] GaAs-金属ストライプ構造からのLOフォノン共鳴赤外輻射特性の構造依存性2019
- Author(s)
  海老澤啓介，馬ベイ，森田健，大木健輔，石谷善博
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaAs/Auストライプ構造を用いたLOフォノン共鳴の赤外光輻射2018
- Author(s)
  青木伴晋，花田昂樹，坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 赤外分光法によるGaNの高電子密度層の空間分布評価2018
- Author(s)
  湯明川,　馬ベイ,　森田健,　石谷善博
- Organizer
  テラヘルツ科学の最先端V
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Optical absorption and emission in THz-mid infrared region of metal-semiconductor composites2018
- Author(s)
  Yoshihiro Ishitani
- Organizer
  Nano ST
- Invited
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2018
- Author(s)
  大木健輔、野町健太郎、西川智秀、馬ベイ、森田健、石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Interactions of phonon, electron, and photon in nitride semiconductors2018
- Author(s)
  Yoshihiro Ishitani, Kensuke Oki, Naomichi Saito, Tsubasa Yamakawa, Daisuke Uehara, Shungo Okamoto, Moe Kikuchi, Keisuke Ebisawa, Bojin Lin, Bei Ma, and Ken Morita
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] フォノンプロセスを考慮した励起子ダイナミクス解析（PXRモデル）2018
- Author(s)
  石谷善博、大木健輔、野町健太郎、馬ベイ、森田健
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] ワイドギャップ半導体における励起子-フォノン系の非熱平衡解析2018
- Author(s)
  大木健輔,　馬ベイ,　森田健,　石谷善博
- Organizer
  第２回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Statistics of excitonic energy states based on phonon-exciton-radiation model2018
- Author(s)
  Yoshihiro Ishitani
- Organizer
  International Workshop on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] フォノンプロセスを考慮した励起子ダイナミクス解析（PXRモデル）2018
- Author(s)
  石谷善博，大木健輔，野町健太郎，馬ベイ，森田健
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Statistics of excitonic energy states based on phonon-exciton-radiation model2018
- Author(s)
  Yoshihiro Ishitani, Kensuke Oki, Tsubasa Yamakawa, Bojin Lin, Bei Ma, and Ken Morita
- Organizer
  International Workshop on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Control of THz emission and absorption resonating with LO phonon energy by meal/semiconductor-composite materials2018
- Author(s)
  Yoshihiro Ishitani
- Organizer
  International Conference on Physics of Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Optical properties of metal-semiconductor composites in THz-mid infrared region2018
- Author(s)
  Yoshihiro Ishitani, Hironori Sakamoto, Tomoyoki Aoki, Hidenori Funabashi, and Ken Morita
- Organizer
  International Conference on Nanomaterials and Nanotechnology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Control of THz emission and absorption resonating with LO phonon energy by meal/semiconductor-composite materials2018
- Author(s)
  Yoshihiro Ishitani
- Organizer
  International Symposium on Semiconductor Physics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] ワイドギャップ半導体キャリア・フォノンダイナミクス2018
- Author(s)
  石谷善博，大木健輔，野町健太郎，馬ベイ，森田健
- Organizer
  第13回励起ナノプロセス研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Optical absorption and emission in THz-mid infrared region of metal-semiconductor composites2018
- Author(s)
  Yoshihiro Ishitani
- Organizer
  Nano Science and Technology 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Statistics of excitonic energy states based on phonon-exciton-radiation model2018
- Author(s)
  Yoshihiro Ishitani, Kensuke Oki, Tsubasa Yamakawa, Bojin Lin, Bei Ma, and Ken Morita
- Organizer
  International Workshop on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] ワイドギャップ半導体キャリア・フォノンダイナミクス2018
- Author(s)
  石谷善博，大木健輔，野町健太郎，馬ベイ，森田健
- Organizer
  第13回励起ナノプロセス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Optical absorption and emission in THz-mid infrared region of metal-semiconductor composites2018
- Author(s)
  Yoshihiro Ishitani
- Organizer
  Nano ST 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2018
- Author(s)
  大木健輔、野町健太郎、西川智秀、馬ベイ、森田健、石谷善博
- Organizer
  65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Phonon modes Analysis of AlN/InN Superlattice2018
- Author(s)
  Yoshihiro Ihira and Masato Oda
- Organizer
  International Workshop on Nitride Semiconductor
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018
- Author(s)
  坂本裕則，馬ベイ，森田健, 石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaAs/Auストライプ構造を用いたLOフォノン共鳴の赤外光輻射2018
- Author(s)
  青木伴晋、花田昂樹、坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 赤外分光法によるGaNの高電子密度層の空間分布評価2018
- Author(s)
  湯明川,　馬ベイ,　森田健,　石谷善博
- Organizer
  テラヘルツ科学の最先端V
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] ラマン散乱マッピングによるInGaNの局所フォノン場評価2018
- Author(s)
  齋藤直道, 瀧口佳祐, 馬ベイ, 森田健, 飯田大輔, 大川和宏, 石谷善博
- Organizer
  第７９回応用物理学会秋季学術講演会名古屋国際会議場
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018
- Author(s)
  坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Optical properties of metal-semiconductor composites in THz-mid infrared region2018
- Author(s)
  Yoshihiro Ishitani, Hironori Sakamoto, Tomoyoki Aoki, Hidenori Funabashi, and Ken Morita
- Organizer
  International Conference on Nanomaterials and Nanotechnology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] ワイドギャップ半導体における励起子-フォノン系の非熱平衡解析2018
- Author(s)
  大木健輔,　馬ベイ,　森田健,　石谷善博
- Organizer
  第２回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Monte-Carlo simulation of time- and spatial-dynamics for electron spins in GaAs under the high-power THz pulse2018
- Author(s)
  Ichirota Takazawa、Yoshihiro Ishitani、Ken Morita
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Optical absorption and emission in THz-mid infrared region of metal-semiconductor composites2018
- Author(s)
  Yoshihiro Ishitani
- Organizer
  Nano Science and Technolohy 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] ラマン散乱マッピングによるInGaNの局所フォノン場評価2018
- Author(s)
  齋藤直道, 瀧口佳祐, 馬ベイ, 森田健, 飯田大輔, 大川和宏, 石谷善博
- Organizer
  第７９回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Optical absorption and emission inTHz-mid infrared region of metal-semiconductor composites2018
- Author(s)
  Yoshihiro Ishitani
- Organizer
  Nano ST 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Interactions of phonon, electron, and photon in nitride semiconductors2018
- Author(s)
  Yoshihiro Ishitani, Kensuke Oki, Naomichi Saito, Tsubasa Yamakawa, Daisuke Uehara, Shungo Okamoto, Moe Kikuchi, Keisuke Ebisawa, Bojin Lin, Bei Ma, and Ken Morita
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Statistics of excitonic energy states based on phonon-exciton-radiation model2018
- Author(s)
  Yoshihiro Ishitani
- Organizer
  International Workshop on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] GaNにおける励起子及び自由キャリアの密度とレート係数の理論計算2017
- Author(s)
  大木健輔, 野町健太郎, 馬ベイ, 森田健, 石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Simulation of carrier-exciton-phonon energy transportation in GaN2017
- Author(s)
  Bei Ma and Yoshihiro Ishitani
- Organizer
  12th International conference on nitride semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Theoretical calculation of rate coefficients, densities, and decay time of excitons and free carriers in GaN2017
- Author(s)
  Kensuke Oki, Kentaro Nomachi, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] フォノンによるGaN励起子ダイナミクス過程への影響2017
- Author(s)
  馬ベイ, 石谷善博
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNにおける励起子及び自由キャリアの密度とレート係数の理論計算2017
- Author(s)
  大木健輔，野町健太郎，馬ベイ，森田健，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] AlN/金属ストライプ構造のラマン散乱スペクトルにおけるA1-E1選択則の崩れに関する検討2017
- Author(s)
  坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜. 横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] p型GaNにおける深い準位を介した発光特性の解析2017
- Author(s)
  庄司凌，上原大侑, 馬ベイ, 森田健, 石谷善博 , 塩島謙次
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017
- Author(s)
  松本大，馬ベイ，森田健，福井一俊，木村真一，飯塚拓也，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] AlN/金属ストライプ構造における表面、界面ポラリトンモード観測2017
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 窒化物半導体における電子‐フォノン相互作用と結晶性2017
- Author(s)
  石谷善博，坂本裕則，馬ベイ，森田健
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Photonic function based on longitudinal optical phonon modes of semiconductors: infrared absorption control of composite materials and destructive quantum interferences2017
- Author(s)
  Y. Ishitani, H. Sakamoto, B. Ma, and K. Morita
- Organizer
  EMN Optoelectronics
- Invited
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Theoretical calculation of rate coefficients, densities, and decay time of excitons and free carriers in GaN2017
- Author(s)
  Kensuke Oki, Kentaro Nomachi, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  12th International conference on nitride semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2017
- Author(s)
  野町健太郎, 大木健輔, 馬ベイ, 森田健, 石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 金属/半導体複合構造におけるLOフォノン-プラズモン結合モード共鳴赤外光吸収とポラリトン損失2017
- Author(s)
  竹内映人，坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜. 横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2017
- Author(s)
  野町健太郎，大木健輔，馬ベイ，森田健，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] AlN 薄膜を用いたLO フォノン共鳴電気双極子形成および表面ポラリトン伝搬2017
- Author(s)
  坂本裕則，森田健, 馬ベイ，石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] 窒化物半導体における電子‐フォノン相互作用と結晶性2017
- Author(s)
  石谷善博、馬ベイ、大木健輔、坂本裕則、森田健
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] lN/金属ストライプ構造における表面、界面ポラリトンモード観測2017
- Author(s)
  坂本裕則，馬ベイ，森田健, 石谷善博
- Organizer
  第9 回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] AlN/金属ストライプ構造における表面、界面ポラリトンモード観測2017
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  第9 回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Photonic function based on longitudinal optical phonon modes of semiconductors: infrared absorption control of composite materials and destructive quantum interferences2017
- Author(s)
  Y. Ishitani, H. Sakamoto, B. Ma, and K. Morita
- Organizer
  EMN Optoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] AlN 薄膜を用いたLOフォノン共鳴電気双極子形成および表面ポラリトン伝搬2017
- Author(s)
  坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared light in AlN/metal-composites2017
- Author(s)
  H. Sakamoto Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Simulation of carrier-exciton-phonon energy transportation in GaN2017
- Author(s)
  Bei Ma, Yoshihiro Ishitani
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Phononic phenomenon in carrier dynamics and interaction with radiation in III-nitride materials2017
- Author(s)
  Yoshihiro Ishitani, Bei Ma, Kensuke Okim Hironori Sakamoto, and Ken Morita
- Organizer
  Third Intensive Discussion on Crystal Growth of Nitride Semiconductors
- Place of Presentation
  Sendai, Japan
- Year and Date
  2017-01-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared light in AlN/metal-composites2017
- Author(s)
  H. Sakamoto Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Organizer
  12th International conference on nitride semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] FDTD法を用いたテラへルツパルス発生のシミュレーション2017
- Author(s)
  大隅勇汰、森田健、石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] p型GaNにおける深い準位を介した発光特性の解析2017
- Author(s)
  庄司凌，上原大侑, 馬ベイ, 森田健, 石谷善博 , 塩島謙次
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Introduction of biexciton processes into exciton dynamics simulation for GaN based on the phononic-excitonic-radiative model2017
- Author(s)
  Kentaro Nomachi, Ma Bei, Ken Morita, and Yoshihiro Ishitani
- Organizer
  International Workshop on UV materials and devices (IWUMD) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] Phononic phenomenon in carrier dynamics and interaction with radiation in III-nitride materials2017
- Author(s)
  Yoshihiro Ishitani, Bei Ma, Kensuke Okim Hironori Sakamoto, and Ken Morita
- Organizer
  Third Intensive Discussion on Crystal Growth of Nitride Semiconductors
- Place of Presentation
  Tohoku University
- Year and Date
  2017-01-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 窒化物半導体における電子‐フォノン相互作用と結晶性2017
- Author(s)
  石谷善博，坂本裕則，馬ベイ，森田健
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Dielectric interaction of infrared light and electron-phonon coupling system in metal/semiconductor composites2017
- Author(s)
  E. Takeuchi, H. Sakamoto, B. Ma, K. Morita, and Y. Ishitani
- Organizer
  Compound Semiconductor Week
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] フォノンによるGaN励起子ダイナミクス過程への影響2017
- Author(s)
  馬ベイ, 石谷善博
- Organizer
  第9 回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17H02772
[Presentation] AlN薄膜を用いたLOフォノン共鳴電気双極子形成および表面ポラリトン伝搬2017
- Author(s)
  坂本裕則, 馬ベイ, 森田健, 石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] AlN/金属ストライプ構造のラマン散乱スペクトルにおけるA1-E1選択則の崩れに関する検討2017
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Dielectric interaction of infrared light and electron-phonon coupling system in metal/semiconductor composites2017
- Author(s)
  E. Takeuchi, H. Sakamoto, B. Ma, K. Morita, and Y. Ishitani
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared light in AlN/metal-composites2017
- Author(s)
  Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Organizer
  International conference on nitride semiconductors
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Introduction of biexciton processes into exciton dynamics simulation for GaN based on the phononic-excitonic-radiative model2017
- Author(s)
  Kentaro Nomachi, Ma Bei, Ken Morita, and Yoshihiro Ishitani
- Organizer
  International Workshop on UV materials and devices
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Phonon Engineering of Semiconductors in THz frequency region2016
- Author(s)
  Yoshihiro Ishitani, Hironori Sakamoto, Eito Takeuchi, Bei Ma, and Ken Morita
- Organizer
  International Conference on Science and Engineering
- Place of Presentation
  Yangon, Myanmar
- Year and Date
  2016-12-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 赤外反射分光によるGaN薄膜の電子特性深さ分解評価手法2016
- Author(s)
  上條隆明、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Simulation of carrier-exciton-phonon dynamics in GaN in non-equilibrium state2016
- Author(s)
  Bei Ma and Yoshihiro Ishitani
- Organizer
  International Workshop on Nitride Seiconductors 2016
- Place of Presentation
  Orland, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] フォノンの吸放出による電子・励起子系エネルギーの励起過程2016
- Author(s)
  馬ベイ，三宅秀人，平松和政，石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode2016
- Author(s)
  Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] 非熱平衡状態におけるGaN励起子ダイナミクスの実験解析及び数値計算2016
- Author(s)
  馬ベイ，竹内和真，石谷善博，三宅秀人，平松和政
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] ラマン散乱スペクトルにおけるファノ干渉を用いた窒化物半導体の正孔濃度評価モデルの検討2016
- Author(s)
  坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス，京都市
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaNにおける非熱平衡系励起子遷移過程のフォノン・衝突・輻射モデルに基づく解析2016
- Author(s)
  岩堀友洋、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光によるGaN薄膜の電子特性深さ分解評価手法2016
- Author(s)
  上條隆明、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] p 型Ga0.5In0.5P における高濃度ｐ型ドープ試料におけるフォノン系電磁誘起透明化のスペクトル計算2016
- Author(s)
  坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Carrier dynamics and related electronic band properties of InN films2016
- Author(s)
  石谷善博
- Organizer
  第７７回秋季応用物理学会学術講演会優秀論文賞受賞記念講演
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] フォノンの吸放出による電子・励起子系エネルギーの励起過程2016
- Author(s)
  馬ベイ，三宅秀人，平松和政，石谷善博
- Organizer
  第７７回秋季応用物理学会学術講演会優秀論文賞受賞記念講演
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Introducing of Biexciton Processes into Exciton Dynamics Simulation for GaN Based on Collisional Phononic and Radiative Model2016
- Author(s)
  Kentaro Nomachi, Tomohiro Iwahori, Kensuke Oki, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  Compound Semiconductor Week
- Place of Presentation
  Toyama
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] p-Ga0.5In0.5Pにおける複数種LOフォノン系量子干渉効果および、フォノン系電磁誘起透明化のスペクトル計算2016
- Author(s)
  坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第5回結晶成長未来塾
- Place of Presentation
  東京農工大学小金井キャンパス，小金井市
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaNにおける励起子・励起子分子準位間遷移過程の理論計算2016
- Author(s)
  野町健太郎，岩堀友洋，大木健輔，馬ベイ，森田健，石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Introducing of Biexciton Processes into Exciton Dynamics Simulation for GaN Based on Collisional Phononic and Radiative Model2016
- Author(s)
  Kentaro Nomachi, Tomohiro Iwahori, Kensuke Oki, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Carrier dynamics and related electronic band properties of InN films2016
- Author(s)
  石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおける起子分子準位間遷移過程理論計算2016
- Author(s)
  野町健太郎，岩堀友洋，大木健輔，馬ベイ，森田健，石谷善博
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Exciton dynamics and stability of GaN in non-thermal equilibrium state by the analysis taking into account the higher-order exciton states2016
- Author(s)
  Yoshihiro Ishitani, K. Takeuchi, T. Iwahori, K. Oki, K. Nomachi, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
- Organizer
  International Workshop on Nitride Seiconductors 2016
- Place of Presentation
  Orland, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Carrier dynamics and related electronic band properties of InN films2016
- Author(s)
  石谷善博
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Simulation of carrier-exciton-phonon dynamics in GaN in non-equilibrium state2016
- Author(s)
  Bei Ma and Yoshihiro Ishitani
- Organizer
  International Workshop on Nitride Seiconductors 2016
- Place of Presentation
  Orlando, U.S.A.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 高次励起準位を用いたGaNにおける励起子の励起・脱励起ダイナミクス解析2016
- Author(s)
  竹内和真、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] P型Ga0.5In0.5Pにおける複数種LO準位と電子遷移系の量子干渉効果2016
- Author(s)
  坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Exciton dynamics and stability of GaN in non-thermal equilibrium state by the analysis taking into account the higher-order exciton states2016
- Author(s)
  Yoshihiro Ishitani, K. Takeuchi, T. Iwahori, K. Oki, K. Nomachi, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
- Organizer
  International Workshop on Nitride Seiconductors 2016
- Place of Presentation
  Orlando, U.S.A.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNにおける励起子・励起子分子準位間遷移過程の理論計算2016
- Author(s)
  野町健太郎, 岩堀友洋, 大木健輔, 馬ベイ, 森田健, 石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Phonon Engineering of Semiconductors in THz frequency region2016
- Author(s)
  Yoshihiro Ishitani, Hironori Sakamoto, Eito Takeuchi, Bei Ma, and Ken Morita
- Organizer
  International Conference on Science and Engineering
- Place of Presentation
  Yangon, Myanmar
- Year and Date
  2016-12-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] LO フォノン-価電子帯間遷移の量子干渉におけるキャリア分布の影響2015
- Author(s)
  坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Interference of 2LO phonon and continuum inter-valence band transition in p-GaInP film2015
- Author(s)
  H. Sakamoto,Y.Ishitani, K. Morita, B. Ma
- Organizer
  40th International Conference on Infrared and Millimeter and Terahertz Waves
- Place of Presentation
  Hong-Kong, China
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaNにおける定常状態励起子遷移過程の水素プラズマモデルに基づいた計算2015
- Author(s)
  岩堀友洋,竹内和真, 馬ベイ, 森田健, 石谷善博
- Organizer
  第7回窒化物半導体結晶成長講演会(プレISGN-6)
- Place of Presentation
  東北大学
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光によるGaNの電子密度深さ不均一性評価手法2015
- Author(s)
  上條隆明, 馬ベイ, 森田健, 石谷善博
- Organizer
  2015年第7回窒化物半導体結晶成長講演会(プレISGN-6)
- Place of Presentation
  東北大学
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Infrared absorption at the LO phonon energy of metal/semiconductor/metal composite materials2015
- Author(s)
  Y. Ishitani, E. Takeuchi, B. Ma, and K. Morita
- Organizer
  40th International Conference on Infrared and Millimeter and Terahertz Waves
- Place of Presentation
  Hong-Kong, China
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2015
- Author(s)
  Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6),
- Place of Presentation
  Act City Hamamatsu, Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2015
- Author(s)
  Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu, Hamamatsu
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Mid-infrared absorption at the LO phonon energy of metal/GaN-composite structure2015
- Author(s)
  Y. Ishitani, K. Hatta, E. Takeuchi, B. Ma, and K. Morita
- Organizer
  11th International Symposium on Nitride Semiconductors
- Place of Presentation
  Beijin, China,
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] 赤外反射分光による GaN の電子深さ特性評価手法2015
- Author(s)
  上條隆明、馬ベイ、森田健、石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおける非熱平衡系励起子遷移過程の水素プラズマモデルに基づいた計算2015
- Author(s)
  岩堀友洋,竹内和真, 馬ベイ, 森田健, 石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光によるGaNの電子密度深さ不均一性評価手法2015
- Author(s)
  上條隆明, 馬 蓓, 森田健, 石谷善博
- Organizer
  第7回窒化物半導体結晶成長講演会(プレISGN-6)
- Place of Presentation
  東北大学
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおけるフォノン-キャリアダイナミクス解析2015
- Author(s)
  馬ベイ, 竹内和真、岩堀友洋、三宅秀人、平松和政、石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Effect of impurity on the exciton dynamics of GaN in non-thermal equilibrium state2015
- Author(s)
  Bei Ma, Kazuma Takeuchi, and Yoshihiro Ishitani
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu, Hamamatsu
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Theoretical investigation of non-thermal equilibrium exciton dynamics based on hydrogen plasma model in GaN2015
- Author(s)
  Tomohiro Iwahori, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu, Hamamatsu
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Numerical analysis of ion impurity effect on energy relaxation processes of carriers and excitons in GaN2015
- Author(s)
  B. Ma, K. Morita, and Y. Ishitani
- Organizer
  11th International Symposium on Nitride Semiconductors
- Place of Presentation
  Beijin, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光による GaN の電子深さ特性評価手法2015
- Author(s)
  條隆明、馬ベイ、森田健、石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] InNの非輻射再結合速度決定機構におけるキャリア・フォノン輸送特性2014
- Author(s)
  今井大地, 森田健, 塚原捷生, 馬蓓, 石谷善博, 王新強, 草部一秀, 吉川明彦
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Carrier recombination dynamics of III-nitrides based on infrared spectroscopy2014
- Author(s)
  Y.Ishitani and D.Imai
- Organizer
  AnalytiX2014
- Place of Presentation
  Dalian, China
- Invited
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] 縮退型ポンプ-プローブ法によるInN の超高速ダイナミクス観測2014
- Author(s)
  今井大地, 森田健, 塚原捷生, 馬蓓, 石谷善博, 王新強, 草部一秀, 吉川明彦
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] “縮退型ポンプ-プローブ法によるInNの超高速ダイナミクス観測2014
- Author(s)
  今井大地、森田健、塚原捷生、石谷善博、馬ベイ、王新強、草部一秀、吉川明彦
- Organizer
  第61回応用物理学会春期学術講演
- Place of Presentation
  青山学院大相模原キャンパス、相模原市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] p 型 GaInP を用いた 2 種フォノンと連続準位の量子干渉効果2014
- Author(s)
  坂本裕則, 石原一行, 馬蓓, 森田健, 石谷善博
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] InN の非輻射再結合速度決定機構におけるキャリア・フォノン輸送特性2014
- Author(s)
  今井大地, 森田健, 塚原捷生, 馬蓓, 石谷善博, 王新強, 草部一秀, 吉川明彦
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] p 型GaInP を用いた2 種フォノンと連続準位の量子干渉効果2014
- Author(s)
  坂本裕則，石原一行，馬ベイ，森田健，石谷善博
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Carrierr ecombination dynamics of III-nitrides based on infrared spectroscopy2014
- Author(s)
  Y . Ishitani
- Organizer
  AnalytiX
- Place of Presentation
  Dalian, China
- Invited
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] InNの非輻射再結合速度決定機構におけるキャリア・フォノン輸送特性2014
- Author(s)
  今井大地、石谷善博、王新強、草部一秀、吉川明彦、森田健、馬ベイ
- Organizer
  第61回応用物理学会春期学術講演
- Place of Presentation
  青山学院大相模原キャンパス、相模原市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] GaN励起子発光のフォノンレプリカに着目した励起子運動量および再結合過程の解析2014
- Author(s)
  高橋賢治，後藤圭，今井大地，森田健，馬蓓, 石谷善博，三宅秀人，平松和政
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Effects of Carrier Transport and Local Lattice Temperature on Nonradiative Recombination processes in InN Films2013
- Author(s)
  Daichi Imai, Yoshihiro Ishitani, Xinqiang Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Organizer
  10th International conference on nitride semiconductors (ICNS-2013)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] III 族窒化物半導体における光子-フォノン相互作用2013
- Author(s)
  八田佳祐, 石谷善博
- Organizer
  日本分光学会テラヘルツ分光部会シンポジウムテラヘルツ分光法の最先端 VII~どこへ行くテラヘルツ分光~
- Place of Presentation
  京都大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] InN のバンド端発光効率低減過程におけるフォノン輸送特性の影響2013
- Author(s)
  今井大地, 石谷善博, 王新強, 吉川明彦
- Organizer
  第74回秋季応用物理学会学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] 窒化物半導体における光子-フォノン相互作用2013
- Author(s)
  八田佳祐, 石谷善博
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Effects of Carrier Transport and Local Lattice Temperature on Nonradiative Recombination processes in InN Films2013
- Author(s)
  Daichi Imai, Yoshihiro Ishitani, X inqiang Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Organizer
  10th International Symposium on Nitride Semiconductors
- Place of Presentation
  Washington, U.S.A
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Phonon polariton and infrared absorption effects in III-nitride thin films2013
- Author(s)
  Keisuke Hatta and Yoshihiro Ishitani
- Organizer
  The 38th International Conference on Infrared, Millimeter and Terahertz Waves
- Place of Presentation
  Mainz, Germany
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] 窒化インジウムにおけるフォノン放出を伴う非輻射再結合2013
- Author(s)
  今井大地、石谷善博、王新強、吉川明彦
- Organizer
  日本物理学会
- Place of Presentation
  徳島大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 窒化インジウムにおけるフォノン放出による非輻射再結合過程2013
- Author(s)
  今井大地、石谷善博、王新強、吉川明彦
- Organizer
  2013年度秋季物理学会
- Place of Presentation
  徳島大、徳島市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] InNのバンド端発光効率低減過程におけるフォノン輸送特性の影響,今井大地，石谷善博, 王新強, 吉川明彦2013
- Author(s)
  今井大地、石谷善博、森田健、馬王新強、吉川明彦
- Organizer
  第74回秋季応用物理学会学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] フォノンレプリカを用いた励起子解離ダイナミクス解析の可能性2013
- Author(s)
  後藤圭，今井大地，高橋賢治，森田健，石谷善博，三宅秀人
- Organizer
  第74回秋季応用物理学会学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Phonon polariton and infrared absorption effect s in III-nitride thin films2013
- Author(s)
  K. Hatta and Y . Ishitani
- Organizer
  The 38th International Conference on Infrared, Millimeter and Terahertz Waves
- Place of Presentation
  Mainz, Germany
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] 窒化インジウムにおけるフォノン放出を伴う非輻射再結合2013
- Author(s)
  今井大地, 石谷善博, 王新強, 吉川明彦
- Organizer
  日本物理学会
- Place of Presentation
  徳島大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] III族窒化物半導体における光子－フォノン相互作用2013
- Author(s)
  八田佳祐,石谷善博
- Organizer
  日本分光学会テラヘルツ分光部会シンポジウム
- Place of Presentation
  京都大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] InNの非輻射再結合過程におけるフォノン輸送特性の影響2013
- Author(s)
  今井大地、石谷善博、王新強、吉川明彦
- Organizer
  第74回応用物理学会秋期学術講演会
- Place of Presentation
  同志社大、京都府
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] InN のキャリア再結合における局所的電子・格子ダイナミクスの影響2012
- Author(s)
  今井大地, 石谷善博, 王新強, 草部一秀, 吉川明彦
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] 近・中赤外域分光による InN の輻射・非輻射再結合過程解析2012
- Author(s)
  今井大地, 石谷善博, 王新強, 草部一秀, 吉川明彦
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学生産技術研究所
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Infrared measurement s in the study of III-nitrides2012
- Author(s)
  Y. Ishitani
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductor
- Place of Presentation
  Sendai, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Effect s of Carrier Transport and Local Lattice Temperature on Nonr adiat ive Recombination processes in InN Films2012
- Author(s)
  D. Imai, Y . Ishitani, X . Wang, K. Kusakabe, and A. Yoshikawa
- Organizer
  10th International Symposium on Nitride Semiconductors
- Place of Presentation
  Washington, USA, oral
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Mid and Far -Infrared analysis of the local electron-lattice dynamics on carrier recombinat ion processes of InN films2012
- Author(s)
  D. Imai, Y . Ishitani, M. Fujiwara, X. Wang, K. Kusakabe, and A. Y oshikawa
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan, oral
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Analysis of non-radiative carrier recombination processes in InN films by mid-infrared spectroscopy2012
- Author(s)
  D. Imai, Y . Ishitani, M. Fujiwara, X. Wang, K. Kusakabe, and A. Y oshikawa
- Organizer
  Electronic Material Symposium
- Place of Presentation
  State College, P A, USA, oral
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Carrier scattering processes in p and n type InN fims by infrared spectroscopy2012
- Author(s)
  M.Fujiwara, Y .Ishitani, X.Q.Wang, D.Imai, K.Kusakabe, and A.Y oshikawa
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] 窒化物エピタキシャル層評価における中赤外域表面・界面モードの利用2012
- Author(s)
  増田祥太郎, 石谷善博, 草部一秀, 吉川明彦
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Characteristics of carrier recombination processes in n-type and p-type InN films analyzed by infrared spectroscopy2012
- Author(s)
  D.Imai, Y .Ishitani, X.Q. Wang, K.Kusakabe, and A.Yoshikawa
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] InN のバンド端発光の低減におけるフォノン放出による非輻射性再結合過程2012
- Author(s)
  石谷善博
- Organizer
  第22回格子欠陥フォーラム・励起ナノプロセス研究会・理研シンポジウム合同シンポジウム
- Place of Presentation
  マホロバマインズ三浦
- Year and Date
  2012-09-22
- Invited
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Interface phonon polariton and infrared optical absorption in nitride thin films2012
- Author(s)
  Y. Ishitani
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan, oral
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Electron and hole scattering dynamics in InN films investigated by infrared measurements2011
- Author(s)
  Y.Ishitani, A.Yoshikawa, 他4名
- Organizer
  European Material Research Society Spring Meeting
- Place of Presentation
  Nice, France
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] p型InNにおけるMgアクセプタの活性化エネルギー2011
- Author(s)
  石谷善博
- Organizer
  第4回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学金属材料研究所
- Year and Date
  2011-01-17
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Characterization of Mg-doped InN by infrared spectroscopy2011
- Author(s)
  Y.Ishitani
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Granada, Spain
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] 赤外分光法によるInNおよびその他窒化物半導体評価2011
- Author(s)
  石谷善博，藤原昌幸，今井大地，王新強，草部一秀，吉川明彦
- Organizer
  日本学術振興会第162委員会第76回研究会(招待講演)
- Place of Presentation
  キャンパスイノベーションセンター東京
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] p型InNにおけるMgアクセプタの活性化エネルギー2011
- Author(s)
  石谷善博、藤原昌幸、草部秀一、吉川明彦
- Organizer
  第4回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  年東北大学金属材料研究所
- Year and Date
  2011-01-17
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Electron and hole scattering dynamics in-InN films investigated by infrared measurements.2011
- Author(s)
  Y.Ishitani, M.Fujiwara, D.Imai, X.Wang, K.Kusakabe, A.Yoshikawa
- Organizer
  European Material Research Society Spring Meeting
- Place of Presentation
  Nice, France (Invited Talk)
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] p型InNにおけるMgアクセプタの活性化エネルギー2011
- Author(s)
  石谷善博
- Organizer
  第4回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学金属材料研究所
- Year and Date
  2011-01-18
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Characterization of Mg-doped InN by infrared spectroscopy2011
- Author(s)
  Y.Ishitani, M.fujiwara, X.Wang, K.Kusakebe, A.Yoshiakwa
- Organizer
  Wo rkshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Granada, Spain (Invited Talk)
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] 赤外分光法によるInNおよびその他窒化物半導体評価2011
- Author(s)
  石谷善博, 他
- Organizer
  日本学術振興会第162委員会第76回研究会
- Place of Presentation
  キャンパス・イノベーションセンター東京
- Year and Date
  2011-10-07
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] InNの正孔散乱過程2011
- Author(s)
  石谷善博，今井大地，王新強，草部一秀，吉川明彦
- Organizer
  第5回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学金属材料研究所
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] InNの正孔散乱過程2011
- Author(s)
  石谷善博, 他
- Organizer
  第5回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学金属材料研究所,仙台市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Hole properties of Mg-doped InN films investigated by infrared measurements2011
- Author(s)
  Y.Ishitani, et al.
- Organizer
  5^<th> Asia Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Toba, Japan
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Characterization of Mg-doped InN by infrared spectroscopy2011
- Author(s)
  Yoshihiro Ishitani
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Granada, Spain
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Electron and hole scattering dynamics in InN films investigated by infrared measurements2011
- Author(s)
  Y.Ishitani, et al.
- Organizer
  European Material Research Society Spring Meeting
- Place of Presentation
  Nice, France(Invited)
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] 赤外分光によるGaNのフォノン・電子物性深さ分解評価における重要点2011
- Author(s)
  石谷善博, 他
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス,山形市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] 赤外分光によるGaNのフォノン・電子物性深さ分解評価における重要点2011
- Author(s)
  石谷善博，増田祥太郎，草部一秀，吉川明彦
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Mg impurity level in highly doped p-type InN studied by temperature dependence of infrared spectra2010
- Author(s)
  M.Fujiwara, Y.Ishitani, A.Yoshikawa, 他2名
- Organizer
  International Workshop on Nitride Semiconductors, L1.2
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] N-極性MgドープInNにおけるフォトルミネッセンス特性の解析2010
- Author(s)
  今井大地、石谷善博、草部秀一、吉川明彦
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Carrier scattering and non-radiative recombination properties of n-type and p-type InN films2010
- Author(s)
  Y.Ishitani, A.Yoshikawa, 他5名
- Organizer
  International Workshop on Nitride Semiconductors, L1.9
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] p型n型InNの非輻射電子・正孔再結合過程2010
- Author(s)
  石谷善博
- Organizer
  第3回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学金属材料研究所
- Year and Date
  2010-10-25
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Carrier Scattering and Nonradiative Recombination Properties of n-type and p-type InN Films2010
- Author(s)
  Y.Ishitani
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Mgドープp型InNの極低温におけるアクセプタ活性化エネルギー評価2010
- Author(s)
  藤原昌幸、石谷善博、草部秀一、吉川明彦
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館、東京
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] p型n型InNの非輻射電子・正孔再結合過程2010
- Author(s)
  石谷善博、今井大地、草部秀一、吉川明彦
- Organizer
  第3回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学金属材料研究所
- Year and Date
  2010-10-25
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] N極性MgドープInNにおけるフォトルミネッセンス温度依存特性解析2010
- Author(s)
  今井大地、石谷善博、草部秀一、吉川明彦
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Carrier scattering and non-radiative recombination properties of n-type and p-type InN films2010
- Author(s)
  Y.Ishitani
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Quasi-ternary multi-junction solar cells with magic numbers (n,m)2010
- Author(s)
  K.Kusakabe, Y.Ishitani, A.Yoshikawa
- Organizer
  International Workshop on Nitride Semiconductors, J2.8
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Mg impurity level in highly doped p-type InN studied by temp erature dependence of infrared spectra2010
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, K.Kusaka be, A.Yoshiakawa
- Organizer
  Inte rnational Workshop on Nitride Semiconducto rs
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Carrier scattering an d non-radiative recombination properties of n-type and p-type InN films2010
- Author(s)
  Y.Ishitani, M.Fujiwara, X.Wang, K.Kusakebe, A.Yoshiakwa
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Demonstration of p-type InN by temperat ure -dependent Hall effect measurements2010
- Author(s)
  X.Q.Wang, Y.Ishitani, A.Yoshikawa
- Organizer
  I nternational Workshop on Nitride Semicondu ctors
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] 赤外分光法によるInN/InGaN界面における二次元電子ガスの観測2010
- Author(s)
  田中宏和、石谷善博、草部秀一、吉川明彦
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] フォトルミネッセンス法によるN極性MgドープInNのキャリア再結合過程評価2010
- Author(s)
  今井大地、石谷善博、草部秀一、吉川明彦
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館、東京
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Characterization of electron and hole mobility of InN by infrared spectroscopy2009
- Author(s)
  Y.Ishitani
- Organizer
  Asia Pacific Workshop on Widegap Semiconductors 2009
- Place of Presentation
  Zhangjiajie, China
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Effects of threading dislocatio ns and other defectson reduction of band-edge photoluminescence in n-InN films2009
- Author(s)
  Y.Ishitani, X.Wang, K.Kusakebe, A.Yoshiakawa
- Organizer
  Eur opean Materials Research Society 2009 Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Characterization of electron and hole mobility of InN by infra red spectroscopy2009
- Author(s)
  Y.Ishitani, M.Fujiawa, X.Wang, K.Kusak abe, A.Yoshiakawa
- Organizer
  Asia Pacific Workshop on Widegap Semiconductors 2009
- Place of Presentation
  Zhangjiajie, China
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Effects of threading dislocations and other defects on reduction of bandedge photoluminescence in n-InN films2009
- Author(s)
  Y.Ishitani
- Organizer
  European Materials Research Society 2009 Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Deterioration of electronic and radiative properties in n- and p-type InN films by edge-type dislocations2009
- Author(s)
  Y.Ishitani
- Organizer
  8^<th> International Symposium on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] 赤外分光法によるp型InNの正孔濃度及び移動度評価2009
- Author(s)
  藤原昌幸、石谷善博、草部秀一、吉川明彦
- Organizer
  第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Radiative and non-radiative carrier recombination properties of InN2009
- Author(s)
  Y.Ishitani
- Organizer
  Asia Core Workshop on Wide Bangap Semiconductors
- Place of Presentation
  Gyeonju, Korea
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Radiative and non-radiative carrier recombination properties of InN2009
- Author(s)
  Y.Ishitani, K.Kato, X.Wang, A.Yoshiakwa
- Organizer
  Asia Core Workshop on Wide Bandgap Semiconductors
- Place of Presentation
  Gyeonju, Korea (Invited Talk)
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] In極性InN/InGaNヘテロ界面における電子蓄積の観測2009
- Author(s)
  石谷善博
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] ガードリングを用いたInN pn接合のダイオード特性評価2009
- Author(s)
  海口翔平、石谷善博、草部秀一、吉川明彦
- Organizer
  第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Polarity dete rmination of InN by using circular photogal vanic effect2009
- Author(s)
  X.Wang, Q.Zhang, B.Shen, Y.Chen, Y.Ishitani, A.Yoshikawa
- Organizer
  European Materials Research Society 2009 Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Characterization of electron and hole mobility of InN by infrared spectroscopy2009
- Author(s)
  Y.Ishitani
- Organizer
  Asia Pacific Workshop on Widegap Semiconductors 2009
- Place of Presentation
  Zhangjiajie, China
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Effects of threading dislocations and other defects on reduction of band-edge photoluminescence in n-InN films2009
- Author(s)
  Y.Ishitani
- Organizer
  European Materials Research Society 2009 Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Deterioration of electronic and radiative properties in n- and p-type InN films by edge-type dislocations2009
- Author(s)
  Y.Ishitani
- Organizer
  8^<th> International Symposium on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Polarity detection of wurtzite s emiconductors based on circular photogalvani c effect2009
- Author(s)
  Q.Zhang, X.Wang, X.W.He, C.M.Y in, B.Shen, Y.H.Chen, Y.Ishitani, A.Yoshikawa
- Organizer
  Asia Pacific Workshop on Widegap Semiconductors 2009
- Place of Presentation
  Zhangjiajie, China
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Deterioration of electronic and radiative properties in n- and p-type InN films by edge-type dislocations2009
- Author(s)
  Y.Ishitani, M.Fujigawa, X.Wang, K.Kusakebe, A.Yoshikawa
- Organizer
  8^<th> International Symposium on Nitride Semi conductors
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Optical characteriza tion of hole scattering processes in-InN2009
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, K.Kusakebe, A.Yoshikawa
- Organizer
  Ja pan-Korea Asia Core Program General Meeting
- Place of Presentation
  Sendai, Japan
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Deterioration of electronic and radiative properties in n- and p-type InN films by edge-type dislocations2009
- Author(s)
  Y.Ishitani, A.Yoshikawa, 他3名
- Organizer
  8^<th> International Symposium on Nitride Semiconductors, FF3
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 六方晶n型InNにおける非輻射キャリア再結合過程の残留電子濃度・転位密度依存性2009
- Author(s)
  加藤健太、石谷善博、吉川明彦
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  日筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] 高濃度Mgドープp型InNにおけるアクセプタ活性化エネルギーと不純物バンド2009
- Author(s)
  藤原昌幸、石谷善博、草部秀一、吉川明彦
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] In極性InN/InGaNヘテロ界面における電子蓄積の観測2009
- Author(s)
  石谷善博、田中宏和、吉川明彦
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Radiative and non-radiative carrier recombination properties of InN2009
- Author(s)
  Y.Ishitani
- Organizer
  Asia Core Workshop on Wide Bandgap Semiconductors
- Place of Presentation
  Gyeonju, Korea
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] System atic Study on P-Type Doping of InN Layers with Both In- and N-Polarities for Wide R ange Mg Doping Levels2009
- Author(s)
  X.Q. Wang, G.Zhao, B.Shen, Y.Ishitani, H.Harima, A.Yoshikawa
- Organizer
  8th International Symposium on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Present status of electron and hole properties of InN2009
- Author(s)
  Y.Ishitani
- Organizer
  Asia Core Workshop on Wide Bandgap Semiconductors
- Place of Presentation
  Gwangju, Korea
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 赤外分光法によるn型およびp型InN薄膜のキャリア密度および移動度評価2008
- Author(s)
  石谷善博
- Organizer
  電子情報通信学会サマーセミナー
- Place of Presentation
  機械振興会館、東京
- Year and Date
  2008-06-27
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] imultaneous extraction of p-type carrier density and mobility in InN layers by infrared reflectance measurements2008
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Organizer
  Electronic Materials Conference
- Place of Presentation
  California, USA
- Year and Date
  2008-06-26
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Present status of electron and hole properties of InN2008
- Author(s)
  Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Organizer
  Asian core workshop on wide bandgap semiconductors
- Place of Presentation
  Gwangju, Korea, (Invited Talk)
- Year and Date
  2008-10-22
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] 赤外分光エリプソメトリによるp-InNの正孔移動度の異方性解析2008
- Author(s)
  藤原昌幸、石谷善博、崔成伯、吉川明彦
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties2008
- Author(s)
  Y. Ishitani
- Organizer
  International workshop on nitride semiconductors 2008
- Place of Presentation
  Montreux, Suiss
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon coupling properties2008
- Author(s)
  Y.Ishitani
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 低電子濃度InN薄膜における貫通刃状転位の電子散乱への影響2008
- Author(s)
  石谷善博
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] FTIR/SE characterization of Mg-doped InN2008
- Author(s)
  Y. Ishitani
- Organizer
  Workshops on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  Hakone, Kanagawa, Japan
- Year and Date
  2008-03-06
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 赤外分光法によるn型およびp型InN薄膜のキャリア密度および移動度評価2008
- Author(s)
  石谷善博、藤原昌幸、崔成伯、吉川明彦
- Organizer
  電子情報通信学会サマーセミナー
- Place of Presentation
  機械振興会館(招待講演)
- Year and Date
  2008-06-27
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] InN:state of the art- advances in epitaxy control, p-type doping, and novel nanostructures2008
- Author(s)
  A.Yoshikawa, Y.Ishitani, S.B.Che, X.Wang
- Organizer
  Plenary talk in International workshop on nitride semiconductors 2008
- Place of Presentation
  Montreux Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Hole density and anisotropic mobility of Mg-doped InN from the analysis of LOphonon-hole plasmon properties2008
- Author(s)
  Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Organizer
  International workshop on nitride semiconductors 2008
- Place of Presentation
  Montreux, Suiss
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] 赤外分光法によるn型およびp型InN薄膜のキャリア密度および移動度評価2008
- Author(s)
  石谷善博
- Organizer
  電子情報通信学会サマーセミナー
- Place of Presentation
  機械振興会館
- Year and Date
  2008-06-27
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon - hole plasmon coupling properties2008
- Author(s)
  Y.Ishitani, A.Yoshikawa, 他3名
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Radiative lifetime analysis on ultra thin InN/GaN-quantum well structures by transient photoluminescence measurements2008
- Author(s)
  Y.Omori, Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Organizer
  Nanotechnology materials and devices conference
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2008-10-21
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] P-type conductivity control and hole conduction properties of Mg-doped InN2008
- Author(s)
  X.Wang, A.Uedono, S.B.Che, Y.Ishitani, A.Yoshikawa
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Present status of electron and hole properties of InN2008
- Author(s)
  Y. Ishitani
- Organizer
  Asian core workshop on wide bandgap semiconductors
- Place of Presentation
  Gwangju, Korea
- Year and Date
  2008-10-22
- Data Source
  KAKENHI-PROJECT-20560005
[Presentation] Study on p-type dopability and polarity inversion in Mg-doped In-polar InN2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Organizer
  7^<th> International Conference on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Far-infrared reflectance method for investigation on carrier density and scattering processes on-nitrides2007
- Author(s)
  Y. Ishitani
- Organizer
  International Workshop on Advanced Photonic, Electronic, and Energy-Related Materials and Devices
- Place of Presentation
  Jeonju, Korea
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Electron density and electron scattering processes of inside bulk region in InN films2007
- Author(s)
  Y.Ishitani
- Organizer
  The 7th International Conference on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] InN薄膜のキャリア散乱機構の赤外偏光反射分光測定による研究2007
- Author(s)
  石谷善博
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal of a new fine structure of InN/GaN MQWs : One monolayer and fractional monolayer InN wells in GaN barriers2006
- Author(s)
  A.Yoshikawa, Y.Ishitani, 他3名
- Organizer
  Physics of Light Matter Coupling in Nanostructures
- Place of Presentation
  Magdeburg, Germany
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 1.55μm emission from In-polarity InN/In_<0.7>Ga_<0.3>N multi-quantum wells at room temperature2006
- Author(s)
  S.B.Che, Y.Ishitani, A.Yoshikawa, 他2名
- Organizer
  International Workshop on Nitride Semiconductors 2006
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Exciton-phonon interaction of GaN in non-thermal equilibrium state
- Author(s)
  Y.Ishitani, K. Takahashi, K. Goto, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Carrier scattering processes in p and n type InN fims by infrared spectroscopy
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Q.Wang, D.Imai, K.Kusakabe, and A.Yoshikawa
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] Optical characterization of III-nitride semiconductors for ultraviolet to infrared light emitting devices
- Author(s)
  Y.Ishitani
- Organizer
  International Conference on Science and Engineering
- Place of Presentation
  Yangon, Myanmar
- Year and Date
  2014-12-28 – 2014-12-29
- Invited
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外分光によるキャリアダイナミクスおよび結晶特異構造評価
- Author(s)
  石谷善博，森田健，馬　ベイ
- Organizer
  第75回　応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Interface phonon polariton and infrared optical absorption in nitride thin films
- Author(s)
  Yoshihiro Ishitani
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  札幌コンベンションセンター
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] 励起子励起準位を用いたGaNの励起子ダイナミクスの解析
- Author(s)
  竹内和真 ,大泉尚之 ,馬ベイ ,森田健 ,石谷善博 ,三宅秀人 ,平松和政
- Organizer
  第62回　応用物理学会春季学術講演会
- Place of Presentation
  東海大学、神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] InNのバンド端発光の低減におけるフォノン放出による非輻射性再結合過程
- Author(s)
  石谷善博
- Organizer
  第22回格子欠陥フォーラム・励起ナノプロセス研究会・理研シンポジウム　合同シンポジウム
- Place of Presentation
  マホロバマインズ三浦
- Invited
- Data Source
  KAKENHI-PROJECT-23656010
[Presentation] GaNにおけるキャリア・励起子エネルギー緩和過程の励起条件依存に関する数値解析
- Author(s)
  馬ベイ, 森田健, 石谷善博
- Organizer
  第62回　応用物理学会春季学術講演会
- Place of Presentation
  東海大学、神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Simulation of exciton and carrier energy excitation and relaxation dynamics in GaN
- Author(s)
  Bei Ma, Kenji Takahashi, K. Takeuchi, T. Iwahori, Ken Morita and Yoshihiro Ishitani
- Organizer
  Nanoenergy and Nanosystems 2014
- Place of Presentation
  Beijing, China
- Year and Date
  2014-12-08 – 2014-12-10
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光による赤外反射分光による GaN のキャリヤ密度深さ分布解析
- Author(s)
  上條隆明 , 馬ベイ, 森田健, 石谷善博
- Organizer
  第62回　応用物理学会春季学術講演会
- Place of Presentation
  東海大学、神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Carrier recombination dynamics of III-nitrides based on infrared spectroscopy
- Author(s)
  Y.Ishitani
- Organizer
  AnalytiX 2014
- Place of Presentation
  Dalian, China
- Year and Date
  2014-04-22 – 2014-04-28
- Invited
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaN におけるキャリア・励起子エネルギー緩和過程
- Author(s)
  馬　ベイ，山口裕暉，高橋賢治，後藤圭，竹内和真，岩堀友洋，森田健，石谷善博，三宅秀人，平松和政
- Organizer
  第75回　応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25286048

1. Bei Ma (90718420)

# of Collaborated Projects: 4 results

# of Collaborated Products: 133 results
2. YOSHIKAWA Akihiko (20016603)

# of Collaborated Projects: 3 results

# of Collaborated Products: 100 results
3. CHE Songbek (00361410)

# of Collaborated Projects: 2 results

# of Collaborated Products: 39 results
4. Ken Morita (30448344)

# of Collaborated Projects: 2 results

# of Collaborated Products: 60 results
5. KUSAKABE Kazuhide (40339106)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
6. 篠塚雄三 (30144918)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. 三宅秀人 (70209881)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
8. ITOI Takaomi (50333670)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. JIA Anwei (90280916)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. OKAMOTO Tamotsu (80233378)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 矢口裕之 (50239737)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 渡邉聡 (00292772)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 秋山亨 (40362363)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 岩谷素顕 (40367735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. Kensuke Oki

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
16. KOHDA Makoto

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
17. 上野耕平

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Ishitani Yoshihiro 石谷 善博

ISHITANI Yoshihiro 石谷 善博

Research Projects

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Co-Researchers

Integrated control of optical and acoustic phonons for an inovative design of photonic and electronic devicesPrincipal Investigator

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Development of basic science and technology for nitride semiconductor optical devices by controlling phonon functionsPrincipal Investigator

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Development of three dimensional spectroscopy of crystal singularity and defects and its application based on phonon sciencePrincipal Investigator

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Study on THz light source using quantum interference in phonon systemPrincipal Investigator

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Advanced research on semiconductor optical device materials by controlling phonon transport under non-thermal equilibrium statePrincipal Investigator

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Development of Fundamental Technologies of III-Nitride Semiconductor Optical Devices with "1-monolayer" Quantum Well Structures

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Science of THz light source based on longitudinal phonon-plasmon coupled mode in nitride materialsPrincipal Investigator

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Study on carrier transport processes in InN by the developing of sensing method of mobility depth profile by infrared spectroscopyPrincipal Investigator

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Characterization of Nano-Device Structures of InN-based III-nitrides by Extremely Wide Range Spectroscopy

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III族窒化物結晶の分光計測における衝突・輻射モデルによる解析Principal Investigator

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Study on the polarity control of hexagonal-structure widegap compound semiconductors and its effect on the material control

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[Book] 2020年度版 薄膜作製応用ハンドブック2020

Author(s)

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Data Source

[Book] 2020年度版 薄膜作製応用ハンドブック2020

Author(s)

Total Pages

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Data Source

Ishitani Yoshihiro 石谷善博

ISHITANI Yoshihiro 石谷善博

[Book] 2020年度版　薄膜作製応用ハンドブック2020

[Book] 2020年度版　薄膜作製応用ハンドブック2020