NISHIKAWA Atsushi 西川敦

… Alternative Names

西川敦ニシカワアツシ

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Researcher Number	60417095
Affiliation (based on the past Project Information) *help	2011 – 2012: 大阪大学, 大学院・工学研究科, 助教 2011 – 2012: 大阪大学, 工学(系)研究科(研究院), 助教 2009 – 2010: Osaka University, 工学研究科, 助教 2009: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 社員 2007: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 社員 2006: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 研究員
Review Section/Research Field	Principal Investigator Structural/Functional materials / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Principal Investigator 窒化ガリウム / ユウロピウム / エレクトロルミネセンス / 局所構造制御 / XAFS / 赤色発光素子 / Si基板 / GaN基板 / 電流注入型デバイス / LED … More / 4f殻内遷移 / フォトルミネセンス / 赤色発光 / 有機金属気相エピタキシャル法 / OMVPE法 / 赤色発光ダイオード / 窒化物半導体 … More Except Principal Investigator 半導体物性 / テラヘルツ波 / 希土類添加半導体 / 先端機能デバイス / スピンエレクトロニクス / スピントロニクス / オプトロニクス / 希土類元素 / エピタキシャル成長 / 光物性 / 結晶成長 / 半導体 Less

Development of terahertz emitters and detectors using rare-earth-doped semiconductors
- Principal Investigator
  
  FUJIWARA Yasufumi
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
GaNに添加されたEu原子の能動的局所構造制御による高効率赤色発光の実現Principal Investigator
- Principal Investigator
  
  西川敦
- Project Period (FY)
  2011
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Structural/Functional materials
- Research Institution
  Osaka University
Fabrication of red light-emitting devices using the rare-earth doped nitride semiconductors and the elucidation of luminescence mechanismPrincipal Investigator
- Principal Investigator
  
  NISHIKAWA Atsushi
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka University
Development of Properties and Functionalities by Precise Control of Rare-Earth Doping
- Principal Investigator
  
  FUJIWARA Yasufumi
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Creative Scientific Research
- Research Institution
  Osaka University
Research on hexagonal boron nitride semiconductors
- Principal Investigator
  
  KOBAYASHI Yasuyuki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NTT Basic Research Laboratories

All 2013 2012 2011 2010 2009 Other

All Journal Article Presentation Book Patent

[Book] Advanced materials design of rare-earth-doped semiconductors by organometallic vapor phase epitaxy (Chapter 21)2013
- Author(s)
  Y. Fujiwara, Y. Terai, and A. Nishikawa
- Publisher
  Progress in Advanced Structural and Functional Materials Design
- Data Source
  KAKENHI-PROJECT-23656220
[Journal Article] Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy2012
- Author(s)
  A.Nishikawa, N.Furukawa, D.Lee, K.Kawabata, T.Matsuno, R.Harada, Y.Terai, Y.Fujiwara
- Journal Title
  
  Materials Research Society Symposium Proceedings
  
  Volume: (印刷中) Pages: 9-13
- DOI
  10.1557/opl.2011.994
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686099, KAKENHI-PROJECT-24226009
[Journal Article] Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometalic vapor-phase epitaxy2012
- Author(s)
  J.Poplawsky, N.Woodward, A.Nishikawa, Y.Fujiwara, V.Dierolf
- Journal Title
  
  Materials Research Society Symposium Proceedings
  
  Volume: (印刷中) Pages: 21-26
- DOI
  10.1557/opl.2011.1049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686099, KAKENHI-PROJECT-24226009
[Journal Article] Photoluminescence x-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy2012
- Author(s)
  S.Emura, K.Higashi, A.Itatani, H.Torigoe, Y.Kuroda, A.Nishikawa, Y.Fujiwara, H.Asahi
- Journal Title
  
  Materials Research Society Symposium Proceedings
  
  Volume: (印刷中) Pages: 15-20
- DOI
  10.1557/opl.2011.1241
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686099, KAKENHI-PROJECT-24226009
[Journal Article] Eu luminescence center created by Mg codoping in Eu-doped GaN2012
- Author(s)
  D. Lee, A. Nishikawa, Y. Terai, and Y. Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 100 Issue: 17
- DOI
  10.1063/1.4704920
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209, KAKENHI-PROJECT-24226009
[Journal Article] Site selective magneto-optical studies of Eu ions in gallium nitride2012
- Author(s)
  N.Woodward, A.Nishikawa, Y.Fujiwara, V.Dierolf
- Journal Title
  
  Materials Research Society Symposium Proceedings
  
  Volume: (印刷中) Pages: 111-115
- DOI
  10.1557/opl.2011.1156
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686099, KAKENHI-PROJECT-24226009
[Journal Article] Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center2011
- Author(s)
  N.Woodward, J.Poplawsky, B.Mitchell, A.Nishikawa, Y.Fujiwara, V.Dierolf
- Journal Title
  
  Appl.Phys.Lett. 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] OMVPE法により作製したEu添加GaNの発光特性及び赤色発光ダイオードへの応用2011
- Author(s)
  西川敦
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 38 Pages: 270-273
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy2011
- Author(s)
  A.Nishikawa
- Journal Title
  
  Optical Materials
  
  Volume: 33 Issue: 7 Pages: 1071-1074
- DOI
  10.1016/j.optmat.2010.10.010
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers2011
- Author(s)
  N.Woodward, A.Nishikawa, Y.Fujiwara, V.Dierolf
- Journal Title
  
  Optical Materials 33
  
  Pages: 1050-1054
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Excitation of Eu3+ in gallium nitride epitaxial layers : Majority versus trap defect center2011
- Author(s)
  N. Woodward, J. Poplawsky, B. Mitchell, A. Nishikawa, Y. Fujiwara, and V. Dierolf
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Excitation of Eu^<3+> in gallium nitride epitaxial layers : Majority versus trap defectcenter2011
- Author(s)
  N.Woodward, J.Poplawsky, B.Mitchell, A.Nishikawa, Y.Fujiwara, V.Dierolf
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy2011
- Author(s)
  A.Nishikawa, N.Furukawa, T.Kawasaki, Y.Terai, Y.
- Journal Title
  
  Optical Materials 33
  
  Pages: 1071-1074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy2010
- Author(s)
  A.Nishikawa
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] 希土類添加半導体の現状と将来展望2010
- Author(s)
  藤原康文、寺井慶和、西川敦
- Journal Title
  
  応用物理 79
  
  Pages: 25-31
- NAID
  10026198784
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE2010
- Author(s)
  A.Nishikawa
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 207 Pages: 1397-1399
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Growth temperature dependence of Eu-doped GaN grown by organometallic vapor phase epitaxy2010
- Author(s)
  A.Nishikawa
- Journal Title
  
  Journal of The Society of Materials Science Japan
  
  Volume: 59 Pages: 671-674
- NAID
  130000335797
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] 希土類添加半導体の現状と将来展望2010
- Author(s)
  藤原康文, 西川敦, 寺井慶和
- Journal Title
  
  応用物理 79
  
  Pages: 25-31
- NAID
  10026198784
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy2010
- Author(s)
  T.Kawasaki, A.Nishikawa, N.Furukawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  physica status solidi C
  
  Volume: 7 Pages: 2040-2043
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] 有機金属気相エピタキシャル法によるユウロピウム添加窒化ガリウムの成長温度依存性2010
- Author(s)
  西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
- Journal Title
  
  材料 59
  
  Pages: 690-693
- NAID
  130000335797
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] GaNを利用した赤色発光ダイオード2010
- Author(s)
  西川敦
- Journal Title
  
  光アライアンス
  
  Volume: 21 Pages: 7-9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Low-voltage operation of current-injection red emission from p-GaN/Eu-doped GaN/n-GaN light-emitting diodes2010
- Author(s)
  西川敦
- Journal Title
  
  Physica Status Solidi(a) (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy2010
- Author(s)
  N.Furukawa, A.Nishikawa, T.Kawasaki, Y.Terai, Y.Fujiwara
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 208 Pages: 445-448
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Lattice site location of optical centres in GaN : Eu LED material grown by organometallic vapor phase epitaxy2010
- Author(s)
  K. Lorenz, E. Alves, I. S. Roqan, K. P. O' Donnell, A. Nishikawa, Y. Fujiwara, and M. Bockowski
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97 Issue: 11
- DOI
  10.1063/1.3489103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy2010
- Author(s)
  A. Nishikawa, N. Furukawa, T. Kawasaki, Y. Terai, and Y. Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97 Issue: 5
- DOI
  10.1063/1.3478011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] 希土類添加半導体の現状と将来展望2010
- Author(s)
  藤原康文、西川敦、寺井慶和
- Journal Title
  
  応用物理
  
  Volume: 79 Pages: 25-31
- NAID
  10026198784
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE2010
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  physica status solidi A
  
  Volume: 207 Pages: 1397-1399
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Lattice site location of optical centres in GaN : Eu LED material grown by organo metallic vapor phase epitaxy2010
- Author(s)
  K.Lorenz, E.Alves, I.S.Roqan, K.P.O'Donnell, A.Nishikawa, Y.Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Improved Eu Luminescence Properties in Eu-Doped GaN Grown on GaN Substrates by Organometallic Vapor Phase Epitaxy2010
- Author(s)
  H.Kasai, A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  Jpn.J.of Appl.Phys. 49
- NAID
  210000068155
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Improved Eu Luminescence Properties in Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy2010
- Author(s)
  H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] 有機金属気相エピタキシャル法によるユウロピウム添加窒化ガリウムの成長温度依存性2010
- Author(s)
  西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
- Journal Title
  
  材料
  
  Volume: 59 Pages: 690-693
- NAID
  130000335797
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] 有機金属気相エピタキシャル法によるユウロピウム添加窒化ガリウムの成長温度依存性2010
- Author(s)
  西川敦
- Journal Title
  
  材料 (印刷中)
- NAID
  130000335797
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE2010
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara.
- Journal Title
  
  Phys.Stat.Sol.A 207
  
  Pages: 1397-1400
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy2010
- Author(s)
  N.Furukawa, A.Nishikawa, T.Kawasaki, Y.Terai, Y.Fujiwara
- Journal Title
  
  Phys.Stat.Sol.A 208
  
  Pages: 445-448
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy2010
- Author(s)
  A.Nishikawa, N.Furukawa, T.Kawasaki, Y.Terai, Y.Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy2010
- Author(s)
  T.Kawasaki, A.Nishikawa, N.Furukawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  Phys.Stat.Sol.C 7
  
  Pages: 2040-2043
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy2010
- Author(s)
  A.Nishikawa, N.Furukawa, T.Kawasaki, Y.Terai, Y.Fujiwara
- Journal Title
  
  Appl.Phys.Lett. 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Lattice site location of optical centres in GaN:Eu LED material grown by organometallic vapor phase epitaxy2010
- Author(s)
  K.Lorenz, E.Alves, I.S.Roqan, K.P.O'Donnell, A.Nishikawa, Y.Fujiwara
- Journal Title
  
  Appl.Phys.Lett. 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Room-temperature red emission from a p-type/ europium-doped/ n-type gallium nitride light-emitting diode under current injection2009
- Author(s)
  A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, and Y. Fujiwara
- Journal Title
  
  Applied Physics Express
  
  Volume: 2 Pages: 071004-071004
- DOI
  10.1143/apex.2.071004
- NAID
  10025087007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Room-temperature red emission from p-type/europium-doped/n-type gallium nitride light-emitting diodes under current injection2009
- Author(s)
  西川敦
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025087007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Room-temperature red emission from a p-type/europium-doped /n-type gallium nitride light-emitting diode under current injection2009
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  Appl.Phys.Express 2
- NAID
  10025087007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Optical properties of Eu-implanted GaN and related-alloy semiconductors2009
- Author(s)
  A.Nishikawa, H.Kasai, T.Kawasaki, Y.Terai, Y.Fujiwara
- Journal Title
  
  Journal of Physics : Conference Series 191
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Optical properties of Eu-implanted GaN and related-alloy semiconductors2009
- Author(s)
  A.Nishikawa, H.Kasai, T.Kawasaki, Y.Terai, Y.Fujiwara
- Journal Title
  
  Journal of Physics, Conference Series 191
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Optical properties of Eu-implanted GaN and related-alloy semiconductors2009
- Author(s)
  西川敦
- Journal Title
  
  Journal of Physics : Conference Series 191
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection2009
- Author(s)
  A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, Y. Fujiwara
- Journal Title
  
  Appl.Phys.Exp. 2
- NAID
  10025087007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19GS1209
[Journal Article] Luminescence Properties of Eu-implanted GaN-based Semiconductors2009
- Author(s)
  H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  Journal of Physics : Conference Series 165
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Luminescence Properties of Eu-implanted GaN-based Semiconductors2009
- Author(s)
  H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  Journal of Physics, Conference Series 165
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Room-temperature red emission from p-type/europium-doped/n-type gallium nitride light-emitting diodes under current injection2009
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025087007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers
- Author(s)
  N.Woodward, A.Nishikawa, Y.Fujiwara, V.Dierolf
- Journal Title
  
  Optical Materials
  
  Volume: (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy
- Author(s)
  T.Kawasaki, A.Nishikawa, N.Furukawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  physica status solidi (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy
- Author(s)
  A.Nishikawa, N.Furukawa, T.Kawasaki, Y.Terai, Y.Fujiwara
- Journal Title
  
  Optical Materials
  
  Volume: (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Improved Eu Luminescence Properties in Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy
- Author(s)
  H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  Jpn.J.Appl.Phys (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Journal Article] Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
- Journal Title
  
  physica status solidi (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760007
[Patent] 赤色発光半導体素子とその製造方法2011
- Inventor(s)
  藤原康文、西川敦、寺井慶和
- Industrial Property Rights Holder
  大阪大学
- Industrial Property Number
  2011-268141
- Filing Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-19GS1209
[Patent] 赤色発光半導体素子とその製造方法2011
- Inventor(s)
  藤原康文、西川敦、寺井慶和
- Industrial Property Rights Holder
  大阪大学
- Industrial Property Number
  2011-268143
- Filing Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-19GS1209
[Patent] 赤色発光半導体素子および赤色発光半導体素子の製造方法2010
- Inventor(s)
  西川敦、藤原康文、寺井慶和、川崎隆志、古川直樹
- Industrial Property Rights Holder
  国立大学法人大阪大学
- Filing Date
  2010-04-28
- Data Source
  KAKENHI-PROJECT-21760007
[Patent] 赤色発光半導体素子および赤色発光半導体素子の製造方法2009
- Inventor(s)
  西川敦、藤原康文、寺井慶和、川崎隆志、古川直樹
- Industrial Property Rights Holder
  国立大学法人大阪大学
- Industrial Property Number
  2009-112535
- Filing Date
  2009-05-07
- Data Source
  KAKENHI-PROJECT-21760007
[Patent] 赤色発光素子および赤色発光素子の製造方法2009
- Inventor(s)
  西川敦、藤原康文、寺井慶和、川崎隆志、古川直樹
- Industrial Property Rights Holder
  大阪大学
- Industrial Property Number
  2009-112535
- Filing Date
  2009-05-07
- Data Source
  KAKENHI-PROJECT-19GS1209
[Patent] 赤色発光素子および赤色発光素子の製造方法2009
- Inventor(s)
  西川敦, 藤原康文, 寺井慶和, 川崎隆志, 古川直樹
- Industrial Property Rights Holder
  大阪大学
- Industrial Property Number
  2009-112535
- Filing Date
  2009-05-07
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] Recent Progress in Red LEDs with Eu-doped GaN2012
- Author(s)
  Y. Fujiwara, A. Nishikawa, and Y. Terai
- Organizer
  Optical Society of America Topical Meeting on Advances in Optical Materials(AIOM), ITh5B. 4
- Place of Presentation
  San Diego, USA
- Year and Date
  2012-02-02
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] Enhancement of Eu3+ Luminescence Intensity in Eu-Doped GaN by Mg Codoping2011
- Author(s)
  D.Lee, A.Nishikawa, N.Furukawa, K.Kawabata, Y.Terai, Y.Fujiwara
- Organizer
  E-MRS Fall meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2011-09-20
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] Enhancement of Eu3+ Luminescence Intensity in Eu-Doped GaN by Mg Codoping2011
- Author(s)
  D.Lee, A.Nishikawa, N.Furukawa, K.Kawabata, Y.Terai, Y.Fujiwara
- Organizer
  24th International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  奈良(日本)
- Year and Date
  2011-08-23
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] Eu添加GaN発光ダイオードの光学特性2011
- Author(s)
  西川敦、古川直樹、李東建、川〓昂佑、寺井慶和、藤原康文
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Fluorescence XAFS analysis on Eu-doped AlGaN layer grown by organometallic vapor phase epitaxy2011
- Author(s)
  H.Ofuchi, K.Kawabata, A.Nishikawa, D.Lee, N.Furukawa, Y.Terai, T.Honma, Y.Fujiwara
- Organizer
  E-MRS Fall meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2011-09-20
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] 蛍光XAFS法によるEu添加GaNのEuイオン周辺局所構造解析2011
- Author(s)
  大渕博宣、西川敦、古川直樹、寺井慶和、藤原康文、本間徹生
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometalic vapor-phase epitaxy2011
- Author(s)
  Y.Fujiwara, A.Nishikawa, N.Furukawa, D-G.Lee, K.Kawabata, Y.Terai
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  グラスゴー(英国)
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] 希土類添加半導体の新展開2011
- Author(s)
  藤原康文、寺井慶和、西川敦
- Organizer
  日本セラミックス協会第24回秋季シンポジウム「複合アニオン化合物の創製と機能」
- Place of Presentation
  北海道大学(札幌キャンパス)、札幌市
- Year and Date
  2011-09-08
- Data Source
  KAKENHI-PROJECT-23656220
[Presentation] Combined Excitation Experiment and the Emission Nature of Eu in GaN2011
- Author(s)
  J.Poplawsky, A.Nishikawa, Y.Fujiwara, V.Dierolf
- Organizer
  E-MRS Fall meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2011-09-20
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] Eu添加GaNにおけるMg共添加によるEu発光強度の増大2011
- Author(s)
  李東建、西川敦、古川直樹、川〓昂佑、寺井慶和、藤原康文
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] OMVPE法により作製したEu添加AlGaNのEu発光特性2011
- Author(s)
  川〓昂佑、西川敦、李東建、古川直樹、寺井慶和、藤原康文
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Eu添加AlxGa1-xNにおけるEu発光特性のAl組成依存性2011
- Author(s)
  川〓昂佑, 西川敦, 李東建, 寺井康和, 藤原康文
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] Effect of V/III ratio on luminescence and structural properties in Eu-doped GaN grown by organometallic vapor phase epitaxy2011
- Author(s)
  A.Nishikawa, H.Ofuchi, N.Furukawa, D.Lee, K.Kawabata, T.Matsuno, Y.Terai, T.Honma, Y.Fujiwara
- Organizer
  E-MRS Fall meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2011-09-19
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] Eu添加GaNにおけるEu発光の温度消光特性2011
- Author(s)
  古川直樹, 西川敦, 李東建, 若松龍太, 寺井慶和, 藤原康文
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] Investigations of stimulated emission in Er- and Eu-doped GaN2011
- Author(s)
  N.N.Ha, K.Dohnalova, T.Gregorkiewicz, A.Nishikawa, Y.Fujiwara
- Organizer
  E-MRS Fall meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2011-09-19
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] Mg,Eu共添加GaNにおけるEu発光の温度依存性2011
- Author(s)
  李東建, 西川敦, 古川直樹, 若松龍太, 寺井慶和, 藤原康文
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] Optical activity of Eu3+ in GaN:Eu for light emitting devices2011
- Author(s)
  W.D.A.M.de Boer, T.Gregorkiewicz, S.Tanabe, A.Nishikawa, Y.Fujiwara
- Organizer
  E-MRS Fall meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2011-09-19
- Data Source
  KAKENHI-PROJECT-23686099
[Presentation] OMVPE法により作製したEu添加GaNの発光特性及び赤色発光ダイオードへの応用2011
- Author(s)
  西川敦
- Organizer
  第3回窒化物半導体結晶成長講演会「窒化物半導体の応用・評価および結晶成長基礎」
- Place of Presentation
  九州大学筑紫キャンパス(福岡県春日市)(招待講演)
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] 希土類添加半導体を用いた発光デバイスの新展開2011
- Author(s)
  寺井慶和、西川敦、藤原康文
- Organizer
  日本金属学会分科会シンポジウム「環境・医療・IT調和型デバイス、及び材料の最前線」
- Place of Presentation
  科学技術館、東京都千代田区
- Year and Date
  2011-09-22
- Data Source
  KAKENHI-PROJECT-23656220
[Presentation] Room-temperature red emission from light emitting-diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy2010
- Author(s)
  A.Nishikawa
- Organizer
  2010 European Materials Research Society Spring Meeting (E-MRS2010)
- Place of Presentation
  Strasbourg, France(招待講演)
- Year and Date
  2010-06-07
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] Growth temperature dependence of Eu-doped GaN by organometallic vapor phase epitaxy2010
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, S.Anada, N.Woodward, V.Dierolf, S.Emura, H.Asahi, Y Terai, Y.Fujiwara
- Organizer
  International Conference on Core Research and Engineering Science of Advanced Materials
- Place of Presentation
  吹田市
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 有機金属気相成長法によるEu添加GaNの作製とLEDデバイス応用2010
- Author(s)
  西川敦
- Organizer
  応用物理学会関西支部セミナー「光物性とその光機能」
- Place of Presentation
  大阪府立大学(大阪市)
- Year and Date
  2010-01-09
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] 常圧有機金属気相エピタキシャル法により作製されたEu添加GaNにおけるEu発光強度の増大2010
- Author(s)
  古川直樹, 西川敦, 川崎隆志, 寺井慶和, 藤原康文
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Room-temperature red emission from light emitting-diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy2010
- Author(s)
  A.Nishikawa, Y.Terai, Y.Fujiwaza
- Organizer
  2010 European Materials Research Society Spring Meeting(E-MRS2007)
- Place of Presentation
  Strasbourg, France(招待講演)
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy2010
- Author(s)
  Y.Fujiwara, A.Nishikawa, Y.Terai
- Organizer
  15th International Workshop on Inorganic and Organic Electroluminescence&2010 International Conference on the Science and Technology of Emissive Displays and Lighting&XVIII Advanced Display Technologies International Symposium
- Place of Presentation
  St.Petersburg, Russia(INVITED)
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature2010
- Author(s)
  Y.Fujiwara, A.Nishikawa, Y.Terai
- Organizer
  Third International Symposium on Growth of III-Nitrides (ISGN3), We4-2
- Place of Presentation
  Montpellier, France(INVITED)
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy2010
- Author(s)
  Y.Fujiwara, A.Nishikawa, Y.Terai
- Organizer
  15^<th> International Workshop on Inorganic and Organic Electroluminescence & 2010 International Conference on the Science and Technology of Emissive Displays and Lighting & XVIII Advanced Display Technologies International Symposium
- Place of Presentation
  St.Petersburg, Russia
- Year and Date
  2010-09-29
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 有機金属気相成長法によるEu添加GaNの作製とLEDデバイス応用2010
- Author(s)
  西川敦, 寺井慶和, 藤原康文,【招待講演】
- Organizer
  応用物理学会関西支部セミナー
- Place of Presentation
  大阪府立大学、堺市
- Year and Date
  2010-01-09
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Atmospheric-pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy2010
- Author(s)
  N.Furukawa, A.Nishikawa, T.Kawasaki, S.Anada, Y.Terai, Y.Fujiwara
- Organizer
  37th International Symposium on Compound Semiconductors
- Place of Presentation
  高松市(招待講演)
- Year and Date
  2010-06-04
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Site selective excitation pathways of in-situ doped Eu : GaN grown by MOCVD2010
- Author(s)
  N.Woodward, V.Dierolf, A.Nishikawa, Y.Fujiwara
- Organizer
  2010 European Materials Research Society Spring Meeting (E-MRS2010), 8.12
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] New development in rare-earth-doped semiconductors: room-temperature operation of light-emitting diodes exhibiting rare-earth emission under current injection2010
- Author(s)
  Y.Fujiwara, A.Nishikawa, Y.Terai
- Organizer
  29th Electronic Materials Symposium
- Place of Presentation
  伊豆市(招待講演)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection2010
- Author(s)
  西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(招待講演)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Rare-earth-doped semiconductor-based light-emitting diodes operating at room temperature2010
- Author(s)
  Y. Fuiiwara, A. Nishikawa, Y. Terai
- Organizer
  4th International Conference on LED and Solid State Lighting (LED2010)
- Place of Presentation
  Seoul, Korea
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] Rare-earth-doped semiconductor-based light-emitting diodes operating at room temperature2010
- Author(s)
  Y.Fujiwara, A.Nishikawa, Y.Terai
- Organizer
  4th International Conference on LED and Solid State Lighting (LED2010), W-II-2
- Place of Presentation
  Seoul, Korea(INVITED)
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] New development in rare-earth-doped semiconductors: room-temperature operation of light-emitting diodes exhibiting rare-earth emission under current injection2010
- Author(s)
  Y.Fujiwara, A.Nishikawa, Y.Terai
- Organizer
  29th Electronic Materials Symposium
- Place of Presentation
  Izu(INVITED)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy2010
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
- Organizer
  2010 European Materials Research Society Spring Meeting (E-MRS2010), 5.1
- Place of Presentation
  Strasbourg, France(INVITED)
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy2010
- Author(s)
  Y. Fujiwara, A. Nishikawa, and Y. Terai
- Organizer
  15th International Workshop on Inorganic and Organic Electroluminescence & 2010 International Conference on the Science and Technology of Emissive Displays and Lighting & XVIII Advanced Display Technologies International Symposium, St
- Place of Presentation
  Petersburg, Russia
- Year and Date
  2010-10-01
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの成長温度依存性(II)2010
- Author(s)
  古川直樹、西川敦、川崎隆志、穴田智史、N.Woodward、VDierolf、丹保浩行、江村修一、朝日一、寺井慶和、藤原康文
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚市
- Year and Date
  2010-03-20
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Atmospheric-pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy2010
- Author(s)
  N.Furukawa, A.Nishikawa, T.Kawasaki, S.Anada, Y.Terai, Y.Fujiwara
- Organizer
  37th International Symposium on Compound Semiconductors, FrD1-1, Takamatsu Symbol Tower
- Place of Presentation
  Kagawa, Japan(INVITED)
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Europium incorporation in GaN grown by metal organic chemical vapour deposition2010
- Author(s)
  K.Lorenz, E.Alves, I.S.Roqan, K.P.O'Donnell, A.Nishikawa, Y.Fujiwara, M.Bockowski
- Organizer
  2010 European Materials Research Society Spring Meeting (E-MRS2010), 5.2
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Europium incorporation in GaN grown by metal organic chemical vapour deposition2010
- Author(s)
  K.Lorenz, E.Alves, I.S.Roqan, K.P.O'Donnell, A.Nishikawa, Y.Fujiwara, M.Bockowski
- Organizer
  2010 European Materials Research Society Spring Meeting (E-MRS2007)
- Place of Presentation
  Strasbourg, France
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection2010
- Author(s)
  西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎市(招待講演)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] p-GaN/Eu添加GaN/n-GaN発光ダイオードによる室温電流注入赤色発光【応用物理学会講演奨励賞記念講演】2010
- Author(s)
  西川敦, 川崎隆志, 古川直樹, 寺井慶和, 藤原康文, 【招待講演】
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚市
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature2010
- Author(s)
  Y. Fujiwara, A. Nishikawa, and Y. Terai
- Organizer
  3rd International Symposium on Growth of III-Nitrides(ISGN3), WE4-2
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-07
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] Growth temperature dependence of Eu-doped GaN grown by organometallic vaporphase epitaxy2010
- Author(s)
  N.Furukawa, A.Nishikawa, T.Kawasaki, S.Anada, N.Woodward, V.Dierolf, Y.Terai, Y.Fujiwara
- Organizer
  29th Electronic Materials Symposium
- Place of Presentation
  伊豆市
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Recent progress in rare-earth-doped semiconductors2010
- Author(s)
  Y.Fujiwara, A.Nishikawa, Y.Terai
- Organizer
  2010 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), 12.4
- Place of Presentation
  Portland, USA(INVITED)
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 有機金属気相成長法によるEu添加GaNの作製とLEDデバイス応用2010
- Author(s)
  西川敦、寺井慶和、藤原康文
- Organizer
  応用物理学会関西支部セミナー
- Place of Presentation
  大阪府立大学(招待講演)
- Year and Date
  2010-01-09
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature2010
- Author(s)
  Y.Fujiwara, A.Nishikawa, Y.Terai
- Organizer
  Third International Symposium on Growth of III-Nitrides(ISGN3)
- Place of Presentation
  Montpellier, France(招待講演)
- Year and Date
  2010-07-07
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] p-GaN/Eu 添加GaN/n-GaN 発光ダイオードによる室温電流注入赤色発光2010
- Author(s)
  西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(招待講演)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 常圧有機金属気相エピタキシャル法によるEu添加GaNの作製とLED特性の改善2010
- Author(s)
  古川直樹、西川敦、川崎隆志、寺井慶和、藤原康文
- Organizer
  日本材料学会半導体エレクトロニクス委員会平成22年度第1回研究会
- Place of Presentation
  吹田市
- Year and Date
  2010-05-08
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] OMVPE法により作製したEu添加GaNにおけるEu発光特性のV/III比依存性2010
- Author(s)
  西川敦、古川直樹、李東建、川〓昂佑、寺井慶和、藤原康文
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Year and Date
  2010-03-26
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Site selective excitation pathways of in-situ doped Eu : GaN grown by MOCVD2010
- Author(s)
  N.Woodward, V.Dierolf, A.Nishikawa, Y.Fujiwara
- Organizer
  2010 European Materials Research Society Spring Meeting (E-MRS2007)
- Place of Presentation
  Strasbourg, France
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Recent progress in rare-earth-doped semiconductors2010
- Author(s)
  Y.Fujiwara, A.Nishikawa, Y.Terai
- Organizer
  2010 International Conference on Compound Semiconductor Manufacturing Technology(CS MANTECH)
- Place of Presentation
  Portland, USA(招待講演)
- Year and Date
  2010-05-19
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy2009
- Author(s)
  T.Kawasaki, N.Furukawa, A.Nishikawa, Y.Terai, Y.Fujiwara
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS-8), ThP18, Jeju Island
- Place of Presentation
  Korea
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Low-voltage operation of current-injection red emission from p-GaN/Eu-doped GaN/n-GaN light-emitting diodes2009
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS-8), ThP118, Jeju Island
- Place of Presentation
  Korea
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Low-Voltage Operation of Current-Injection Red Emission from P-GaN/Eu-Doped GaN/N-GaN Light-Emitting Diodes2009
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの作製と発光特性2009
- Author(s)
  西川敦, 川崎隆志, 古川直樹, 寺井慶和, 藤原康文, 【招待講演】
- Organizer
  第70回応用物理学会学術講演会、多元系機能材料研究会・結晶工学分科会合同企画
- Place of Presentation
  富山大学、富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] OMVPE法によるEu添加GaNの成長温度依存性2009
- Author(s)
  川崎隆志, 古川直樹, 西川敦, 寺井慶和, 藤原康文
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの成長温度依存性2009
- Author(s)
  古川直樹、川崎隆志、穴田智史、西川敦、寺井慶和、藤原康文
- Organizer
  日本材料学会半導体エレクトロニクス部門研究会
- Place of Presentation
  大阪工業大学、大阪市
- Year and Date
  2009-12-19
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 有機金属気相成長エピタキシャル法によるユウロピウム添加GaN赤色発光ダイオードの室温電流注入発光2009
- Author(s)
  西川敦, 【招待講演】
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学、名古屋市
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Time-resolved photoluminescence in Eu-implanted GaN2009
- Author(s)
  T.Kawasaki, N.Furukawa, H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
- Organizer
  28th Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖、草津市
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 有機金属気相エピタキシャル法によるユウロピウム添加GaN赤色発光ダイオードの室温電流注入発光2009
- Author(s)
  西川敦
- Organizer
  第39回結晶成長国内会議
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの作製と発光特性2009
- Author(s)
  西川敦
- Organizer
  第70回応用物理学関係連合講演会多元系機能材料研究会・結晶工学分科会合同企画シンポジウム
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19GS1209
[Presentation] Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy2009
- Author(s)
  T.Kawasaki, A.Nishikawa, N.Furukawa, Y.Terai, Y.Fujiwara
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] Room-temperature electroluminescence properties of p-GaN/Eu-doped GaN/n-GaN light-emitting diodes2009
- Author(s)
  A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
- Organizer
  3rd Workshop of Impurity Based Electroluminescent Devices and Materials
- Place of Presentation
  Tossa de Mar, Spain
- Year and Date
  2009-10-02
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] p-GaN/Eu添加GaN/n-GaN発光ダイオードによる室温電流注入赤色発光2009
- Author(s)
  西川敦, 川崎隆志, 古川直樹, 寺井慶和, 藤原康文
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの作製と発光特性2009
- Author(s)
  西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
- Organizer
  第70回応用物理学会学術講演会、多元系機能材料研究会・結晶工学分科会合同企画
- Place of Presentation
  富山大学(招待講演)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21760007
[Presentation] 有機金属気相成長エピタキシャル法によるユウロピウム添加GaN赤色発光ダイオードの室温電流注入発光2009
- Author(s)
  西川敦
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(招待講演)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-21760007

1. FUJIWARA Yasufumi (10181421)

# of Collaborated Projects: 2 results

# of Collaborated Products: 14 results
2. TERAI Yoshikazu (90360049)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
3. KOBAYASHI Yasuyuki (90393727)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. MAKIMOTO Toshiki (50374070)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. AKASAKA Tetsuya (90393735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. NAKANO Hidetoshi (90393793)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. GOTOH Hideki (10393795)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. TAWARA Takehiko (40393798)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. SANADA Haruki (50417094)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. ICHIDA Hideki (50379129)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. ASAHI Hajime (90192947)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. HASEGAWA Shigehiko (50189528)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. EMURA Shuichi (90127192)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. ZHOU Ikai (60346179)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. OHTA Hitoshi (70194173)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. OHKUBO Susumu (80283901)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

NISHIKAWA Atsushi 西川 敦

西川 敦 ニシカワ アツシ

Research Projects

Research Products

Co-Researchers

Development of terahertz emitters and detectors using rare-earth-doped semiconductors

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GaNに添加されたEu原子の能動的局所構造制御による高効率赤色発光の実現Principal Investigator

Principal Investigator

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Fabrication of red light-emitting devices using the rare-earth doped nitride semiconductors and the elucidation of luminescence mechanismPrincipal Investigator

Principal Investigator

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Research Institution

Development of Properties and Functionalities by Precise Control of Rare-Earth Doping

Principal Investigator

Project Period (FY)

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Research Institution

Research on hexagonal boron nitride semiconductors

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[Book] Advanced materials design of rare-earth-doped semiconductors by organometallic vapor phase epitaxy (Chapter 21)2013

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Publisher

Data Source

[Journal Article] Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy2012

Author(s)

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DOI

Data Source

[Journal Article] Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometalic vapor-phase epitaxy2012

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Journal Title

DOI

Data Source

[Journal Article] Photoluminescence x-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy2012

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[Journal Article] Eu luminescence center created by Mg codoping in Eu-doped GaN2012

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[Journal Article] Site selective magneto-optical studies of Eu ions in gallium nitride2012

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DOI

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[Journal Article] Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center2011

Author(s)

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[Journal Article] OMVPE法により作製したEu添加GaNの発光特性及び赤色発光ダイオードへの応用2011

Author(s)

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[Journal Article] Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy2011

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[Journal Article] Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers2011

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NISHIKAWA Atsushi 西川敦

西川敦ニシカワアツシ