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Kaneko Mitsuaki  金子 光顕

ORCIDConnect your ORCID iD *help
Researcher Number 60842896
Other IDs
Affiliation (Current) 2025: 京都大学, 工学研究科, 助教
Affiliation (based on the past Project Information) *help 2019 – 2024: 京都大学, 工学研究科, 助教
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related / Basic Section 21060:Electron device and electronic equipment-related / 0302:Electrical and electronic engineering and related fields
Except Principal Investigator
Medium-sized Section 21:Electrical and electronic engineering and related fields / Broad Section C
Keywords
Principal Investigator
論理回路 / 電界効果トランジスタ / 炭化ケイ素 / 厳環境 / イオン注入 / ホール効果 / デバイスモデル / 深いドナー / 接合型電界効果トランジスタ / 閾値電圧 … More / 集積回路 / 炭化珪素 / 接合型トランジスタ / ハイブリッド … More
Except Principal Investigator
MOS界面 / MOSFET / 炭化珪素 / チャネル移動度 / 酸化膜 / 高温動作デバイス / パワーデバイス / 絶縁破壊 Less
  • Research Projects

    (5 results)
  • Research Products

    (88 results)
  • Co-Researchers

    (2 People)
  •  Research on high-temperature operational SiC integrated circuitPrincipal Investigator

    • Principal Investigator
      金子 光顕
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Kyoto University
  •  Materials Science and Device Physics in SiC toward Robust Electronics

    • Principal Investigator
      木本 恒暢
    • Project Period (FY)
      2021 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Review Section
      Broad Section C
    • Research Institution
      Kyoto University
  •  学理に基づく高品質SiC/酸化膜界面の形成とロバストデバイスへの展開

    • Principal Investigator
      木本 恒暢
    • Project Period (FY)
      2021
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Kyoto University
  •  Logic threshold voltage stabilization in silicon carbide integrated circuits within a wide temperature rangePrincipal Investigator

    • Principal Investigator
      Kaneko Mitsuaki
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Kyoto University
  •  Development of SiC hybrid integrated circuits operational under harsh environmentPrincipal Investigator

    • Principal Investigator
      Kaneko Mitsuaki
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Research Activity Start-up
    • Review Section
      0302:Electrical and electronic engineering and related fields
    • Research Institution
      Kyoto University

All 2024 2023 2022 2021 2020 2019

All Journal Article Presentation Patent

  • [Journal Article] A Study of Complementary Logic Circuits Using SiC JFETs for Operation in High-Temperature Environments2024

    • Author(s)
      金子 光顕、木本 恒暢
    • Volume
      J107-C
    • Issue
      4
    • Pages
      145-153
    • DOI

      10.14923/transelej.2023JCI0015

    • ISSN
      1881-0217
    • Year and Date
      2024-04-01
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Journal Article] Insight Into Mobility Improvement by the Oxidation-Minimizing Process in SiC MOSFETs2024

    • Author(s)
      Mikami Kyota、Tachiki Keita、Kaneko Mitsuaki、Kimoto Tsunenobu
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 71 Issue: 1 Pages: 931-934

    • DOI

      10.1109/ted.2023.3333283

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23KJ1387, KAKENHI-PROJECT-21H05003
  • [Journal Article] Origin of hole mobility anisotropy in 4H-SiC2024

    • Author(s)
      R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
    • Journal Title

      Journal of Applied Physics

      Volume: 135 Issue: 7 Pages: 075704-075704

    • DOI

      10.1063/5.0186307

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22KJ1957, KAKENHI-PROJECT-21H05003
  • [Journal Article] Tunneling current through non-alloyed metal/heavily-doped SiC interfaces2024

    • Author(s)
      Masahiro Hara, Takeaki Kitawaki, Hajime Tanaka, Mitsuaki Kaneko, and Tsunenobu Kimoto
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 171 Pages: 108023-108023

    • DOI

      10.1016/j.mssp.2023.108023

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22KJ1709, KAKENHI-PROJECT-21H05003
  • [Journal Article] Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate2023

    • Author(s)
      Kaneko M.、Tsibizov A.、Kimoto T.、Grossner U.
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 70 Issue: 4 Pages: 2153-2156

    • DOI

      10.1109/ted.2023.3245998

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Journal Article] Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces2023

    • Author(s)
      Takeaki Kitawaki, Masahiro Hara, Hajime Tanaka, Mitsuaki Kaneko, and Tsunenobu Kimoto
    • Journal Title

      Applied Physics Express

      Volume: 16 Issue: 3 Pages: 031005-031005

    • DOI

      10.35848/1882-0786/acc30d

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22KJ1709, KAKENHI-PROJECT-21H05003
  • [Journal Article] 350°C Operation of SiC Complementary JFET Logic Gates2023

    • Author(s)
      Kaneko Mitsuaki、Nakajima Masashi、Jin Qimin、Maeda Noriyuki、Kimoto Tsunenobu
    • Journal Title

      Proc. of 2023 IEEE CPMT Symposium Japan (ICSJ)

      Volume: - Pages: 180-183

    • DOI

      10.1109/icsj59341.2023.10339600

    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Journal Article] Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs2023

    • Author(s)
      Chi Xilun、Tachiki Keita、Mikami Kyota、Kaneko Mitsuaki、Kimoto Tsunenobu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 62 Issue: 11 Pages: 110906-110906

    • DOI

      10.35848/1347-4065/ad0799

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Journal Article] Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H-SiC2023

    • Author(s)
      R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
    • Journal Title

      physica status solidi (b)

      Volume: 260 Issue: 10 Pages: 2300275-2300275

    • DOI

      10.1002/pssb.202300275

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22KJ1957, KAKENHI-PROJECT-21H05003
  • [Journal Article] Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation2023

    • Author(s)
      Matsuoka Taiga、Kaneko Mitsuaki、Kimoto Tsunenobu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 62 Issue: 1 Pages: 010908-010908

    • DOI

      10.35848/1347-4065/acb309

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21K14209, KAKENHI-PROJECT-21H05003
  • [Journal Article] Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface2023

    • Author(s)
      Kaneko Mitsuaki、Takashima Hideaki、Shimazaki Konosuke、Takeuchi Shigeki、Kimoto Tsunenobu
    • Journal Title

      APL Materials

      Volume: 11 Issue: 9 Pages: 091121-091121

    • DOI

      10.1063/5.0162610

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23KJ1190, KAKENHI-PROJECT-21H05003, KAKENHI-PROJECT-21H04444, KAKENHI-PROJECT-23K22426
  • [Journal Article] Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC2023

    • Author(s)
      Hara Masahiro、Kaneko Mitsuaki、Kimoto Tsunenobu
    • Journal Title

      Applied Physics Express

      Volume: 16 Issue: 2 Pages: 021003-021003

    • DOI

      10.35848/1882-0786/acb98b

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21H05003, KAKENHI-PROJECT-22KJ1709
  • [Journal Article] Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates2022

    • Author(s)
      Takahashi Katsuya、Tanaka Hajime、Kaneko Mitsuaki、Kimoto Tsunenobu
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 69 Issue: 4 Pages: 1989-1994

    • DOI

      10.1109/ted.2022.3154673

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21K14209, KAKENHI-PROJECT-21H05003
  • [Journal Article] SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K2022

    • Author(s)
      Kaneko M.、Nakajima M.、Jin Q.、Kimoto T.
    • Journal Title

      IEEE Electron Device Letters

      Volume: 43 Issue: 7 Pages: 997-1000

    • DOI

      10.1109/led.2022.3179129

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21K14209, KAKENHI-PROJECT-21H05003
  • [Journal Article] Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes2022

    • Author(s)
      Hara Masahiro、Tanaka Hajime、Kaneko Mitsuaki、Kimoto Tsunenobu
    • Journal Title

      Applied Physics Letters

      Volume: 120 Issue: 17 Pages: 172103-172103

    • DOI

      10.1063/5.0088681

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21H05003, KAKENHI-PROJECT-22KJ1709
  • [Journal Article] Mobility enhancement in heavily doped 4H-SiC (0001), (11-20), and (1-100) MOSFETs via an oxidation-minimizing process2022

    • Author(s)
      Tachiki Keita、Mikami Kyota、Ito Koji、Kaneko Mitsuaki、Kimoto Tsunenobu
    • Journal Title

      Applied Physics Express

      Volume: 15 Issue: 7 Pages: 071001-071001

    • DOI

      10.35848/1882-0786/ac7197

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Journal Article] Lateral spreads of ion-implanted Al and P atoms in silicon carbide2021

    • Author(s)
      Jin Qimin、Nakajima Masashi、Kaneko Mitsuaki、Kimoto Tsunenobu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: 5 Pages: 051001-051001

    • DOI

      10.35848/1347-4065/abf13d

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Journal Article] Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures2021

    • Author(s)
      M. Hara, M. Kaneko, and T. Kimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: SB Pages: SBBD14-SBBD14

    • DOI

      10.35848/1347-4065/abe3d8

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H03779, KAKENHI-PROJECT-21H05003
  • [Journal Article] Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation2021

    • Author(s)
      Tachiki Keita、Kaneko Mitsuaki、Kimoto Tsunenobu
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 3 Pages: 031001-031001

    • DOI

      10.35848/1882-0786/abdcd9

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19J23422, KAKENHI-PROJECT-21H05003
  • [Journal Article] Electron mobility along <0001> and <1-100> directions in 4H-SiC over a wide range of donor concentration and temperature2021

    • Author(s)
      R. Ishikawa, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
    • Journal Title

      Appl. Phys. Express

      Volume: 14 Issue: 6 Pages: 061005-061005

    • DOI

      10.35848/1882-0786/abfeb5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Journal Article] Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs2020

    • Author(s)
      M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 67 Issue: 10 Pages: 4538-4540

    • DOI

      10.1109/ted.2020.3017143

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H03779, KAKENHI-PROJECT-19K23515
  • [Journal Article] Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate2019

    • Author(s)
      Nakajima M.、Kaneko M.、Kimoto T.
    • Journal Title

      IEEE Electron Device Letters

      Volume: 40 Issue: 6 Pages: 866-869

    • DOI

      10.1109/led.2019.2910598

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K23515, KAKENHI-PROJECT-18H03779
  • [Journal Article] SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation2019

    • Author(s)
      Kaneko Mitsuaki、Grossner Ulrike、Kimoto Tsunenobu
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 841-844

    • DOI

      10.4028/www.scientific.net/msf.963.841

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K23515, KAKENHI-PROJECT-18H03779
  • [Patent] SiC接合型電界効果トランジスタ及びSiC相補型接合型電界効果トランジスタ2022

    • Inventor(s)
      金子光顕、松岡大雅、木本恒暢
    • Industrial Property Rights Holder
      京都大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2022
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Patent] SiC相補型電界効果トランジスタ2022

    • Inventor(s)
      金子光顕、木本恒暢
    • Industrial Property Rights Holder
      京都大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2022
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Patent] SiC相補型電界効果トランジスタ2022

    • Inventor(s)
      金子 光顕, 松岡 大雅, 木本 恒暢
    • Industrial Property Rights Holder
      金子 光顕, 松岡 大雅, 木本 恒暢
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2022-065535
    • Filing Date
      2022
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC2023

    • Author(s)
      K. Kuwahara, T. Kitawaki, M. Hara, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs2023

    • Author(s)
      X. Chi, K. Tachiki, K. Mikami, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Anisotropic Electron and Hole Mobilities in 4H-SiC Bulk Crystals2023

    • Author(s)
      R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
    • Organizer
      65th Electronic Materials Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC2023

    • Author(s)
      S. Kozakai, H. Fujii, M. Kaneko and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Physics and Performance Improvement of SiC MOSFETs2023

    • Author(s)
      T. Kimoto, K. Tachiki, K. Mikami, X. Chi, and M. Kaneko
    • Organizer
      2023 Int. Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter2023

    • Author(s)
      Mitsuaki Kaneko,Taiga Matsuoka,Tsunenobu Kimoto
    • Organizer
      20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K [IEEE EDL]2023

    • Author(s)
      Mitsuaki Kaneko,Masashi Nakajima,Qimin Jin,Tsunenobu Kimoto
    • Organizer
      The 23rd Kansai Colloquium Electron Devices Workshop
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Fundamental study on SiC p-channel MOSFETs2023

    • Author(s)
      K. Mikami, M. Kaneko, and T. Kimoto
    • Organizer
      Mini-Conference on Next Generation Materials for Ultra Performance Microwave and Power Switching Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Carrier compensating center density in n-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates2023

    • Author(s)
      Qimin Jin,Chansoon Koo,Mitsuaki Kaneko,Tsunenobu Kimoto
    • Organizer
      20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] 350℃ operation of SiC complementary JFET logic gates2023

    • Author(s)
      Mitsuaki Kaneko,Masashi Nakajima,Qimin Jin,Noriyuki Maeda,Tsunenobu Kimoto
    • Organizer
      12th IEEE CPMT Symposium Japan (ICSJ2023)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications2023

    • Author(s)
      T. Kimoto and M. Kaneko
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate2023

    • Author(s)
      S. Toshimitsu, K. Mikami, K. Tachiki, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Over 600℃ operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer2023

    • Author(s)
      S. Shibata, T. Matsuoka, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] 350℃ operation of SiC complementary JFET logic gates2023

    • Author(s)
      M. Kaneko, M. Nakajima, Q. Jin, N. Maeda, and T. Kimoto
    • Organizer
      12th IEEE CPMT Symposium Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter2023

    • Author(s)
      M. Kaneko, T. Matsuoka, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Progress of SiC MOSFETs and JFETs beyond Power Applications2023

    • Author(s)
      Tsunenobu Kimoto,Keita Tachiki,Kyota Mikami,Mitsuaki Kaneko
    • Organizer
      IME Workshop on Wide Bandgap Semiconductors 2023
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Over 600℃ operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer2023

    • Author(s)
      Shunya Shibata,Taiga Matsuoka,Mitsuaki Kaneko,Tsunenobu Kimoto
    • Organizer
      20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications2023

    • Author(s)
      Tsunenobu Kimoto,Mitsuaki Kaneko
    • Organizer
      20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Density control of single-photon sources formed at a SiO2/SiC interface2023

    • Author(s)
      M. Kaneko, H. Takashima, S. Takeuchi, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes2023

    • Author(s)
      R. Ishikawa, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena2023

    • Author(s)
      M. Hara, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Progress of SiC MOSFETs and JFETs beyond Power Applications2023

    • Author(s)
      T. Kimoto, K. Tachiki, K. Mikami, and M. Kaneko
    • Organizer
      IME Workshop on Wide Bandgap Semiconductors 2023
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] High-Field Phenomena in SiC Material and Devices2023

    • Author(s)
      T. Kimoto, H. Niwa, X. Chi, M. Hara, R. Ishikawa, H. Tanaka, and M. Kaneko
    • Organizer
      Symposium on Silicon Carbide as Quantum-Classical Platform 2023
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] High-mobility SiC p-channel MOSFETs on nonpolar faces2023

    • Author(s)
      K. Mikami, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Carrier compensating center density in n-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates2023

    • Author(s)
      Q. Jin, C. Koo, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs2023

    • Author(s)
      X. Chi, K. Tachiki, K. Mikami, M. Kaneko, and T. Kimoto
    • Organizer
      Mini-Conference on Next Generation Materials for Ultra Performance Microwave and Power Switching Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs2023

    • Author(s)
      Mitsuaki Kaneko,Noriyuki Maeda,Tsunenobu Kimoto
    • Organizer
      20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes2023

    • Author(s)
      M. Takayasu, T. Matsuoka, M. Hara, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs2023

    • Author(s)
      M. Kaneko, N. Maeda, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes2023

    • Author(s)
      Manato Takayasu,Taiga Matsuoka,Masahiro Hara,Mitsuaki Kaneko,Tsunenobu Kimoto
    • Organizer
      20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] High-quality MOS interface on 4H-SiC (11-20) formed by the oxidation-minimizing process2022

    • Author(s)
      K. Mikami, K. Tachiki, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Physical Understanding and Prevention of Bipolar Degradation in SiC Power Devices2022

    • Author(s)
      T. Kimoto, A. Iijima, and M. Kaneko
    • Organizer
      241st Electrochemical Society Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Anomalously high electron mobility in S-implanted n-type SiC2022

    • Author(s)
      T. Matsuoka, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Progress and Future Challenges in SiC MOSFETs2022

    • Author(s)
      T. Kimoto, K. Tachiki, K. Ito, K. Mikami, and M. Kaneko
    • Organizer
      10th Asia-Pacific Workshop on Widegap Semiconductors 2022
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] High-Temperature Operation of SiC JFET-Based Complementary Circuits2022

    • Author(s)
      Mitsuaki Kaneko, Masashi Nakajima,Qimin Jin, Tsunenobu Kimoto
    • Organizer
      2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Contribution of a split-off band to tunneling current in heavily-doped p-type SiC Schottky barrier diodes2022

    • Author(s)
      T. Kitawaki, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] 高温動作集積回路を目指したSiC相補型JFETの基礎研究2022

    • Author(s)
      金子 光顕, 中島 誠志, 金 祺民, 前田 憲幸, 木本 恒暢
    • Organizer
      応用物理学会先進パワー半導体分科会 第9回講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] High temperature operation of SiC complementary JFET logic gates fully fabricated by ion implantation2022

    • Author(s)
      Mitsuaki Kaneko, Masashi Nakajima, Qimin Jin, Tsunenobu Kimoto
    • Organizer
      19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] High temperature operation of SiC complementary JFET logic gates fully fabricated by ion implantation2022

    • Author(s)
      M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Enhanced tunneling current at Schottky contacts formed on heavily P+-implanted SiC2022

    • Author(s)
      M. Hara, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Remarkable improvement of threshold voltage controllability in ion-implantation-based SiC JFETs by adopting bottom-gate structure2022

    • Author(s)
      Shunya Shibata, Taiga Matsuoka, Mitsuaki Kaneko, Tsunenobu Kimoto
    • Organizer
      19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Depth profile analyses of deep levels near 4H-SiC p+-n junctions formed by Al ion implantation2022

    • Author(s)
      H. Fujii, K. Kanegae, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Anisotropy of hole mobility in 4H-SiC over wide ranges of acceptor concentration and temperature2022

    • Author(s)
      R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Anomalously high electron mobility in S-implanted n-type SiC2022

    • Author(s)
      Taiga Matsuoka, Mitsuaki Kaneko, Tsunenobu Kimoto
    • Organizer
      19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Hall効果測定によるSイオン注入n型SiC層の電気的性質評価2022

    • Author(s)
      松岡 大雅, 金子 光顕, 木本 恒暢
    • Organizer
      応用物理学会先進パワー半導体分科会 第9回講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] High-Temperature Operation of SiC JFET-Based Complementary Circuits2022

    • Author(s)
      M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto
    • Organizer
      2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Remarkable improvement of threshold voltage controllability in ion-implantation-based SiC JFETs by adopting bottom-gate structure2022

    • Author(s)
      S. Shibata, T. Matsuoka, M. Kaneko, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] High Mobility in SiC MOSFETs with Heavily-Doped p-Bodies2022

    • Author(s)
      T. Kimoto, K. Tachiki, K. Ito, K. Mikami, M. Kaneko, M. Horita, and J. Suda
    • Organizer
      14th Topical Workshop on Heterostructure Microelectronics
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Performance Improvement and Reliability Physics in SiC MOSFETs2022

    • Author(s)
      T. Kimoto, K. Tachiki, A. Iijima, and M. Kaneko
    • Organizer
      IEEE Int. Reliability Phys. Symposium 2022
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] A New Horizon of SiC Technology Driven by Deeper Understanding of Physics2021

    • Author(s)
      T. Kimoto, M. Kaneko, T. Kobayashi, H. Tanaka, K. Tachiki, A. Iijima, S. Yamashita, X. Chi, Y. Zhao, D. Stefanakis, and Y. Matsushita
    • Organizer
      Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] SPICE model reproducing the static and dynamic characteristics of a SiC complementary JFET inverter from 300 to 573 K2021

    • Author(s)
      Noriyuki Maeda, Mitsuaki Kaneko, Hajime Tanaka, Tsunenobu Kimoto
    • Organizer
      13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Anisotropy of electron mobility in 4H-SiC over wide ranges of donor concentration and temperature2021

    • Author(s)
      R. Ishikawa, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
    • Organizer
      Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Suppression of a logic-threshold-voltage shift in a SiC complementary JFET logic gate at high temperature2021

    • Author(s)
      Mitsuaki Kaneko, Masashi Nakajima, Tsunenobu Kimoto
    • Organizer
      13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Progress and Future Challenges of SiC Power MOSFETs2021

    • Author(s)
      T. Kimoto, T. Kobayashi, K. Tachiki, K. Ito, and M. Kaneko
    • Organizer
      5th IEEE Electron Devices Technology and Manufacturing Conference 2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Ideal Thermionic Field Emission and Field Emission Transport through Metal/Heavily-Doped SiC Schottky Barriers2021

    • Author(s)
      M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
    • Organizer
      Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Physics and Innovative Technologies in SiC Power Devices2021

    • Author(s)
      T. Kimoto, M. Kaneko, K. Tachiki, K. Ito, R. Ishikawa, X. Chi, D. Stefanakis, T. Kobayashi, and H. Tanaka
    • Organizer
      67th IEEE Int. Electron Devices Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Mobility improvement in 4H-SiC MOSFETs by H2 etching before SiO2 deposition and interface nitridation2021

    • Author(s)
      K. Tachiki, K. Ito, M. Kaneko, and T. Kimoto
    • Organizer
      Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H05003
  • [Presentation] Impacts of High-Concentration Carrier Traps on Electrical Characteristics of p-i-n Diodes on HPSI SiC Substrates2021

    • Author(s)
      Katsuya Takahashi, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto
    • Organizer
      13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K14209
  • [Presentation] Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate2020

    • Author(s)
      Qimin Jin, Masashi Nakajima, Mitsuaki Kaneko, Tsunenobu Kimoto
    • Organizer
      2020 International Conference on Solid State Devices and Materials (SSDM2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K23515
  • [Presentation] Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs2019

    • Author(s)
      Masashi Nakajima, Q. Jin, Mitsuaki Kaneko, Tsunenobu Kimoto
    • Organizer
      International Conference on Silicon Carbide and Related Materials (ICSCRM 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K23515
  • [Presentation] Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate2019

    • Author(s)
      Mitsuaki Kaneko, Tsibizov Alexander, Tsunenobu Kimoto, Ulrike Grossner
    • Organizer
      International Conference on Silicon Carbide and Related Materials (ICSCRM 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K23515
  • [Presentation] Impacts of Channel Length on Electrical Characteristics in Side-Gate SiC JFETs2019

    • Author(s)
      Masashi Nakajima, Q. Jin, Mitsuaki Kaneko, Tsunenobu Kimoto
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K23515
  • 1.  木本 恒暢 (80225078)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 47 results
  • 2.  田中 一 (40853346)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 10 results

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