Kaneko Mitsuaki 金子光顕

Researcher Number	60842896
Other IDs
Affiliation (Current)	2025: 京都大学, 工学研究科, 助教
Affiliation (based on the past Project Information) *help	2019 – 2025: 京都大学, 工学研究科, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Basic Section 21060:Electron device and electronic equipment-related / 0302:Electrical and electronic engineering and related fields Except Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Broad Section C
Keywords	Principal Investigator 論理回路 / 電界効果トランジスタ / 炭化ケイ素 / 厳環境 / イオン注入 / ホール効果 / デバイスモデル / 深いドナー / 接合型電界効果トランジスタ / 閾値電圧 … More / 集積回路 / 炭化珪素 / 接合型トランジスタ / ハイブリッド … More Except Principal Investigator MOS界面 / MOSFET / 炭化珪素 / チャネル移動度 / 酸化膜 / 高温動作デバイス / パワーデバイス / 絶縁破壊 Less

Research on high-temperature operational SiC integrated circuitPrincipal Investigator
- Principal Investigator
  
  金子光顕
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyoto University
Materials Science and Device Physics in SiC toward Robust Electronics
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  2021 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  Kyoto University
学理に基づく高品質SiC/酸化膜界面の形成とロバストデバイスへの展開
- Principal Investigator
  
  木本恒暢
- Project Period (FY)
  2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Kyoto University
Logic threshold voltage stabilization in silicon carbide integrated circuits within a wide temperature rangePrincipal Investigator
- Principal Investigator
  
  Kaneko Mitsuaki
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kyoto University
Development of SiC hybrid integrated circuits operational under harsh environmentPrincipal Investigator
- Principal Investigator
  
  Kaneko Mitsuaki
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Review Section
  
  0302:Electrical and electronic engineering and related fields
- Research Institution
  Kyoto University

All 2024 2023 2022 2021 2020 2019

All Journal Article Presentation Patent

[Journal Article] A Study of Complementary Logic Circuits Using SiC JFETs for Operation in High-Temperature Environments2024
- Author(s)
  金子光顕、木本恒暢
- Volume
  J107-C
- Issue
  4
- Pages
  145-153
- DOI
  10.14923/transelej.2023JCI0015
- ISSN
  1881-0217
- Year and Date
  2024-04-01
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14209
[Journal Article] Insight Into Mobility Improvement by the Oxidation-Minimizing Process in SiC MOSFETs2024
- Author(s)
  Mikami Kyota、Tachiki Keita、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 71 Issue: 1 Pages: 931-934
- DOI
  10.1109/ted.2023.3333283
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23KJ1387, KAKENHI-PROJECT-21H05003
[Journal Article] Origin of hole mobility anisotropy in 4H-SiC2024
- Author(s)
  R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 135 Issue: 7 Pages: 075704-075704
- DOI
  10.1063/5.0186307
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1957, KAKENHI-PROJECT-21H05003
[Journal Article] Tunneling current through non-alloyed metal/heavily-doped SiC interfaces2024
- Author(s)
  Masahiro Hara, Takeaki Kitawaki, Hajime Tanaka, Mitsuaki Kaneko, and Tsunenobu Kimoto
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 171 Pages: 108023-108023
- DOI
  10.1016/j.mssp.2023.108023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1709, KAKENHI-PROJECT-21H05003
[Journal Article] Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate2023
- Author(s)
  Kaneko M.、Tsibizov A.、Kimoto T.、Grossner U.
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 70 Issue: 4 Pages: 2153-2156
- DOI
  10.1109/ted.2023.3245998
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Journal Article] Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces2023
- Author(s)
  Takeaki Kitawaki, Masahiro Hara, Hajime Tanaka, Mitsuaki Kaneko, and Tsunenobu Kimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 3 Pages: 031005-031005
- DOI
  10.35848/1882-0786/acc30d
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1709, KAKENHI-PROJECT-21H05003
[Journal Article] 350°C Operation of SiC Complementary JFET Logic Gates2023
- Author(s)
  Kaneko Mitsuaki、Nakajima Masashi、Jin Qimin、Maeda Noriyuki、Kimoto Tsunenobu
- Journal Title
  
  Proc. of 2023 IEEE CPMT Symposium Japan (ICSJ)
  
  Volume: - Pages: 180-183
- DOI
  10.1109/icsj59341.2023.10339600
- Data Source
  KAKENHI-PROJECT-21K14209
[Journal Article] Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs2023
- Author(s)
  Chi Xilun、Tachiki Keita、Mikami Kyota、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: 11 Pages: 110906-110906
- DOI
  10.35848/1347-4065/ad0799
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H05003
[Journal Article] Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H-SiC2023
- Author(s)
  R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
- Journal Title
  
  physica status solidi (b)
  
  Volume: 260 Issue: 10 Pages: 2300275-2300275
- DOI
  10.1002/pssb.202300275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1957, KAKENHI-PROJECT-21H05003
[Journal Article] Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation2023
- Author(s)
  Matsuoka Taiga、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: 1 Pages: 010908-010908
- DOI
  10.35848/1347-4065/acb309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14209, KAKENHI-PROJECT-21H05003
[Journal Article] Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface2023
- Author(s)
  Kaneko Mitsuaki、Takashima Hideaki、Shimazaki Konosuke、Takeuchi Shigeki、Kimoto Tsunenobu
- Journal Title
  
  APL Materials
  
  Volume: 11 Issue: 9 Pages: 091121-091121
- DOI
  10.1063/5.0162610
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KJ1190, KAKENHI-PROJECT-21H05003, KAKENHI-PROJECT-21H04444, KAKENHI-PROJECT-23K22426
[Journal Article] Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC2023
- Author(s)
  Hara Masahiro、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 2 Pages: 021003-021003
- DOI
  10.35848/1882-0786/acb98b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H05003, KAKENHI-PROJECT-22KJ1709
[Journal Article] Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates2022
- Author(s)
  Takahashi Katsuya、Tanaka Hajime、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 69 Issue: 4 Pages: 1989-1994
- DOI
  10.1109/ted.2022.3154673
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14209, KAKENHI-PROJECT-21H05003
[Journal Article] SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K2022
- Author(s)
  Kaneko M.、Nakajima M.、Jin Q.、Kimoto T.
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 43 Issue: 7 Pages: 997-1000
- DOI
  10.1109/led.2022.3179129
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14209, KAKENHI-PROJECT-21H05003
[Journal Article] Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes2022
- Author(s)
  Hara Masahiro、Tanaka Hajime、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 120 Issue: 17 Pages: 172103-172103
- DOI
  10.1063/5.0088681
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H05003, KAKENHI-PROJECT-22KJ1709
[Journal Article] Mobility enhancement in heavily doped 4H-SiC (0001), (11-20), and (1-100) MOSFETs via an oxidation-minimizing process2022
- Author(s)
  Tachiki Keita、Mikami Kyota、Ito Koji、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 7 Pages: 071001-071001
- DOI
  10.35848/1882-0786/ac7197
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H05003
[Journal Article] Lateral spreads of ion-implanted Al and P atoms in silicon carbide2021
- Author(s)
  Jin Qimin、Nakajima Masashi、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 5 Pages: 051001-051001
- DOI
  10.35848/1347-4065/abf13d
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14209
[Journal Article] Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures2021
- Author(s)
  M. Hara, M. Kaneko, and T. Kimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBD14-SBBD14
- DOI
  10.35848/1347-4065/abe3d8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03779, KAKENHI-PROJECT-21H05003
[Journal Article] Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation2021
- Author(s)
  Tachiki Keita、Kaneko Mitsuaki、Kimoto Tsunenobu
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 3 Pages: 031001-031001
- DOI
  10.35848/1882-0786/abdcd9
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19J23422, KAKENHI-PROJECT-21H05003
[Journal Article] Electron mobility along <0001> and <1-100> directions in 4H-SiC over a wide range of donor concentration and temperature2021
- Author(s)
  R. Ishikawa, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 14 Issue: 6 Pages: 061005-061005
- DOI
  10.35848/1882-0786/abfeb5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H05003
[Journal Article] Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs2020
- Author(s)
  M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 67 Issue: 10 Pages: 4538-4540
- DOI
  10.1109/ted.2020.3017143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03779, KAKENHI-PROJECT-19K23515
[Journal Article] Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate2019
- Author(s)
  Nakajima M.、Kaneko M.、Kimoto T.
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 40 Issue: 6 Pages: 866-869
- DOI
  10.1109/led.2019.2910598
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K23515, KAKENHI-PROJECT-18H03779
[Journal Article] SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation2019
- Author(s)
  Kaneko Mitsuaki、Grossner Ulrike、Kimoto Tsunenobu
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 841-844
- DOI
  10.4028/www.scientific.net/msf.963.841
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K23515, KAKENHI-PROJECT-18H03779
[Patent] SiC接合型電界効果トランジスタ及びSiC相補型接合型電界効果トランジスタ2022
- Inventor(s)
  金子光顕、松岡大雅、木本恒暢
- Industrial Property Rights Holder
  京都大学
- Industrial Property Rights Type
  特許
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-21H05003
[Patent] SiC相補型電界効果トランジスタ2022
- Inventor(s)
  金子光顕、木本恒暢
- Industrial Property Rights Holder
  京都大学
- Industrial Property Rights Type
  特許
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-21H05003
[Patent] ＳｉＣ相補型電界効果トランジスタ2022
- Inventor(s)
  金子光顕, 松岡大雅, 木本恒暢
- Industrial Property Rights Holder
  金子光顕, 松岡大雅, 木本恒暢
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-065535
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Formation of non-alloyed ohmic contacts on heavily Al+-implanted p-type SiC2023
- Author(s)
  K. Kuwahara, T. Kitawaki, M. Hara, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs2023
- Author(s)
  X. Chi, K. Tachiki, K. Mikami, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Anisotropic Electron and Hole Mobilities in 4H-SiC Bulk Crystals2023
- Author(s)
  R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  65th Electronic Materials Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC2023
- Author(s)
  S. Kozakai, H. Fujii, M. Kaneko and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Physics and Performance Improvement of SiC MOSFETs2023
- Author(s)
  T. Kimoto, K. Tachiki, K. Mikami, X. Chi, and M. Kaneko
- Organizer
  2023 Int. Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter2023
- Author(s)
  Mitsuaki Kaneko,Taiga Matsuoka,Tsunenobu Kimoto
- Organizer
  20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K [IEEE EDL]2023
- Author(s)
  Mitsuaki Kaneko,Masashi Nakajima,Qimin Jin,Tsunenobu Kimoto
- Organizer
  The 23rd Kansai Colloquium Electron Devices Workshop
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Fundamental study on SiC p-channel MOSFETs2023
- Author(s)
  K. Mikami, M. Kaneko, and T. Kimoto
- Organizer
  Mini-Conference on Next Generation Materials for Ultra Performance Microwave and Power Switching Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Carrier compensating center density in n-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates2023
- Author(s)
  Qimin Jin,Chansoon Koo,Mitsuaki Kaneko,Tsunenobu Kimoto
- Organizer
  20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] 350℃ operation of SiC complementary JFET logic gates2023
- Author(s)
  Mitsuaki Kaneko,Masashi Nakajima,Qimin Jin,Noriyuki Maeda,Tsunenobu Kimoto
- Organizer
  12th IEEE CPMT Symposium Japan (ICSJ2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications2023
- Author(s)
  T. Kimoto and M. Kaneko
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate2023
- Author(s)
  S. Toshimitsu, K. Mikami, K. Tachiki, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Over 600℃ operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer2023
- Author(s)
  S. Shibata, T. Matsuoka, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] 350℃ operation of SiC complementary JFET logic gates2023
- Author(s)
  M. Kaneko, M. Nakajima, Q. Jin, N. Maeda, and T. Kimoto
- Organizer
  12th IEEE CPMT Symposium Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter2023
- Author(s)
  M. Kaneko, T. Matsuoka, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Progress of SiC MOSFETs and JFETs beyond Power Applications2023
- Author(s)
  Tsunenobu Kimoto,Keita Tachiki,Kyota Mikami,Mitsuaki Kaneko
- Organizer
  IME Workshop on Wide Bandgap Semiconductors 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Over 600℃ operation of a bottom-gate p-JFET with double-well structure fabricated by ion implantation on an n-type SiC epilayer2023
- Author(s)
  Shunya Shibata,Taiga Matsuoka,Mitsuaki Kaneko,Tsunenobu Kimoto
- Organizer
  20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC Applications2023
- Author(s)
  Tsunenobu Kimoto,Mitsuaki Kaneko
- Organizer
  20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Density control of single-photon sources formed at a SiO2/SiC interface2023
- Author(s)
  M. Kaneko, H. Takashima, S. Takeuchi, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Estimation of electron drift mobility along the c-axis in 4H-SiC by using vertical Schottky barrier diodes2023
- Author(s)
  R. Ishikawa, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena2023
- Author(s)
  M. Hara, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Progress of SiC MOSFETs and JFETs beyond Power Applications2023
- Author(s)
  T. Kimoto, K. Tachiki, K. Mikami, and M. Kaneko
- Organizer
  IME Workshop on Wide Bandgap Semiconductors 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] High-Field Phenomena in SiC Material and Devices2023
- Author(s)
  T. Kimoto, H. Niwa, X. Chi, M. Hara, R. Ishikawa, H. Tanaka, and M. Kaneko
- Organizer
  Symposium on Silicon Carbide as Quantum-Classical Platform 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] High-mobility SiC p-channel MOSFETs on nonpolar faces2023
- Author(s)
  K. Mikami, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Carrier compensating center density in n-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates2023
- Author(s)
  Q. Jin, C. Koo, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs2023
- Author(s)
  X. Chi, K. Tachiki, K. Mikami, M. Kaneko, and T. Kimoto
- Organizer
  Mini-Conference on Next Generation Materials for Ultra Performance Microwave and Power Switching Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs2023
- Author(s)
  Mitsuaki Kaneko,Noriyuki Maeda,Tsunenobu Kimoto
- Organizer
  20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes2023
- Author(s)
  M. Takayasu, T. Matsuoka, M. Hara, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs2023
- Author(s)
  M. Kaneko, N. Maeda, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Carrier transport and barrier height of S+-implanted SiC Schottky barrier diodes2023
- Author(s)
  Manato Takayasu,Taiga Matsuoka,Masahiro Hara,Mitsuaki Kaneko,Tsunenobu Kimoto
- Organizer
  20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] High-quality MOS interface on 4H-SiC (11-20) formed by the oxidation-minimizing process2022
- Author(s)
  K. Mikami, K. Tachiki, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Physical Understanding and Prevention of Bipolar Degradation in SiC Power Devices2022
- Author(s)
  T. Kimoto, A. Iijima, and M. Kaneko
- Organizer
  241st Electrochemical Society Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Anomalously high electron mobility in S-implanted n-type SiC2022
- Author(s)
  T. Matsuoka, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Progress and Future Challenges in SiC MOSFETs2022
- Author(s)
  T. Kimoto, K. Tachiki, K. Ito, K. Mikami, and M. Kaneko
- Organizer
  10th Asia-Pacific Workshop on Widegap Semiconductors 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] High-Temperature Operation of SiC JFET-Based Complementary Circuits2022
- Author(s)
  Mitsuaki Kaneko, Masashi Nakajima,Qimin Jin, Tsunenobu Kimoto
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Contribution of a split-off band to tunneling current in heavily-doped p-type SiC Schottky barrier diodes2022
- Author(s)
  T. Kitawaki, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] 高温動作集積回路を目指したSiC相補型JFETの基礎研究2022
- Author(s)
  金子光顕, 中島誠志, 金祺民, 前田憲幸, 木本恒暢
- Organizer
  応用物理学会先進パワー半導体分科会第9回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] High temperature operation of SiC complementary JFET logic gates fully fabricated by ion implantation2022
- Author(s)
  Mitsuaki Kaneko, Masashi Nakajima, Qimin Jin, Tsunenobu Kimoto
- Organizer
  19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] High temperature operation of SiC complementary JFET logic gates fully fabricated by ion implantation2022
- Author(s)
  M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Enhanced tunneling current at Schottky contacts formed on heavily P+-implanted SiC2022
- Author(s)
  M. Hara, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Remarkable improvement of threshold voltage controllability in ion-implantation-based SiC JFETs by adopting bottom-gate structure2022
- Author(s)
  Shunya Shibata, Taiga Matsuoka, Mitsuaki Kaneko, Tsunenobu Kimoto
- Organizer
  19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Depth profile analyses of deep levels near 4H-SiC p+-n junctions formed by Al ion implantation2022
- Author(s)
  H. Fujii, K. Kanegae, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Anisotropy of hole mobility in 4H-SiC over wide ranges of acceptor concentration and temperature2022
- Author(s)
  R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Anomalously high electron mobility in S-implanted n-type SiC2022
- Author(s)
  Taiga Matsuoka, Mitsuaki Kaneko, Tsunenobu Kimoto
- Organizer
  19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Hall効果測定によるSイオン注入n型SiC層の電気的性質評価2022
- Author(s)
  松岡大雅, 金子光顕, 木本恒暢
- Organizer
  応用物理学会先進パワー半導体分科会第9回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] High-Temperature Operation of SiC JFET-Based Complementary Circuits2022
- Author(s)
  M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Remarkable improvement of threshold voltage controllability in ion-implantation-based SiC JFETs by adopting bottom-gate structure2022
- Author(s)
  S. Shibata, T. Matsuoka, M. Kaneko, and T. Kimoto
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] High Mobility in SiC MOSFETs with Heavily-Doped p-Bodies2022
- Author(s)
  T. Kimoto, K. Tachiki, K. Ito, K. Mikami, M. Kaneko, M. Horita, and J. Suda
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Performance Improvement and Reliability Physics in SiC MOSFETs2022
- Author(s)
  T. Kimoto, K. Tachiki, A. Iijima, and M. Kaneko
- Organizer
  IEEE Int. Reliability Phys. Symposium 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] A New Horizon of SiC Technology Driven by Deeper Understanding of Physics2021
- Author(s)
  T. Kimoto, M. Kaneko, T. Kobayashi, H. Tanaka, K. Tachiki, A. Iijima, S. Yamashita, X. Chi, Y. Zhao, D. Stefanakis, and Y. Matsushita
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] SPICE model reproducing the static and dynamic characteristics of a SiC complementary JFET inverter from 300 to 573 K2021
- Author(s)
  Noriyuki Maeda, Mitsuaki Kaneko, Hajime Tanaka, Tsunenobu Kimoto
- Organizer
  13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Anisotropy of electron mobility in 4H-SiC over wide ranges of donor concentration and temperature2021
- Author(s)
  R. Ishikawa, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Suppression of a logic-threshold-voltage shift in a SiC complementary JFET logic gate at high temperature2021
- Author(s)
  Mitsuaki Kaneko, Masashi Nakajima, Tsunenobu Kimoto
- Organizer
  13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Progress and Future Challenges of SiC Power MOSFETs2021
- Author(s)
  T. Kimoto, T. Kobayashi, K. Tachiki, K. Ito, and M. Kaneko
- Organizer
  5th IEEE Electron Devices Technology and Manufacturing Conference 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Ideal Thermionic Field Emission and Field Emission Transport through Metal/Heavily-Doped SiC Schottky Barriers2021
- Author(s)
  M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Physics and Innovative Technologies in SiC Power Devices2021
- Author(s)
  T. Kimoto, M. Kaneko, K. Tachiki, K. Ito, R. Ishikawa, X. Chi, D. Stefanakis, T. Kobayashi, and H. Tanaka
- Organizer
  67th IEEE Int. Electron Devices Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Mobility improvement in 4H-SiC MOSFETs by H2 etching before SiO2 deposition and interface nitridation2021
- Author(s)
  K. Tachiki, K. Ito, M. Kaneko, and T. Kimoto
- Organizer
  Europ. Conf. on Silicon Carbide and Related Materials 2020-2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H05003
[Presentation] Impacts of High-Concentration Carrier Traps on Electrical Characteristics of p-i-n Diodes on HPSI SiC Substrates2021
- Author(s)
  Katsuya Takahashi, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto
- Organizer
  13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020・2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K14209
[Presentation] Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate2020
- Author(s)
  Qimin Jin, Masashi Nakajima, Mitsuaki Kaneko, Tsunenobu Kimoto
- Organizer
  2020 International Conference on Solid State Devices and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K23515
[Presentation] Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs2019
- Author(s)
  Masashi Nakajima, Q. Jin, Mitsuaki Kaneko, Tsunenobu Kimoto
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K23515
[Presentation] Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate2019
- Author(s)
  Mitsuaki Kaneko, Tsibizov Alexander, Tsunenobu Kimoto, Ulrike Grossner
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K23515
[Presentation] Impacts of Channel Length on Electrical Characteristics in Side-Gate SiC JFETs2019
- Author(s)
  Masashi Nakajima, Q. Jin, Mitsuaki Kaneko, Tsunenobu Kimoto
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K23515

1. 木本恒暢 (80225078)

# of Collaborated Projects: 2 results

# of Collaborated Products: 47 results
2. 田中一 (40853346)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results

Kaneko Mitsuaki 金子 光顕

Research Projects

Research Products

Co-Researchers

Research on high-temperature operational SiC integrated circuitPrincipal Investigator

Principal Investigator

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Research Institution

Materials Science and Device Physics in SiC toward Robust Electronics

Principal Investigator

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学理に基づく高品質SiC/酸化膜界面の形成とロバストデバイスへの展開

Principal Investigator

Project Period (FY)

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Research Institution

Logic threshold voltage stabilization in silicon carbide integrated circuits within a wide temperature rangePrincipal Investigator

Principal Investigator

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Research Institution

Development of SiC hybrid integrated circuits operational under harsh environmentPrincipal Investigator

Principal Investigator

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Research Institution

[Journal Article] A Study of Complementary Logic Circuits Using SiC JFETs for Operation in High-Temperature Environments2024

Author(s)

Volume

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Pages

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Year and Date

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Data Source

[Journal Article] Insight Into Mobility Improvement by the Oxidation-Minimizing Process in SiC MOSFETs2024

Author(s)

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[Journal Article] Origin of hole mobility anisotropy in 4H-SiC2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Tunneling current through non-alloyed metal/heavily-doped SiC interfaces2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] 350°C Operation of SiC Complementary JFET Logic Gates2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H-SiC2023

Kaneko Mitsuaki 金子光顕