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AOYAGI Yoshinobu  青柳 克信

ORCIDConnect your ORCID iD *help
… Alternative Names

青柳 克彦  アオヤギ カツヒコ

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Researcher Number 70087469
Other IDs
External Links
Affiliation (based on the past Project Information) *help 2013 – 2018: 立命館大学, 総合科学技術研究機構, 上席研究員
2012: 立命館大学, 立命館グローバル・イノベーション研究機構, 特別招聘教授
2010 – 2012: 立命館大学, 立命館グローバル・イノベーション研究機構, 教授
2010: 立命館大学, 立命館グローバル・イノベーション推進機構, 教授
2009: 立命館グローバル, イノベーション研究機構, 教授 … More
2007 – 2008: Ritsumeikan University, Center for Promotion of the COE Program, Professor
2005 – 2006: 東京工業大学, 大学院総合理工学研究科, 教授
2001 – 2004: Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Professor, 大学院・総合理工学研究科, 教授
2002: Tokyo Institute of Technology Interdisciplinary Graduate School of Science and Engineering, Professor, 総合理工学研究科, 教授
2001: RIKEN, Semiconductors Lab., Chief Scientist, 半導体工学研究室, 先任研究員
1991 – 2001: 理化学研究所, 半導体工学研究室, 主任研究員
1999 – 2000: 筑波大学, 理化学研究所, 主任研究員
1998: 理化学研究所, 主任研究員
1998: 理化学研究所, 半導体工学研, 主任研究員(研究職)
1998: RIKEN,Semiconductor Laboratory. Chief Scientist, 半導体工学研究室, 先任研究員
1997: 筑波大学, 理化学研究所, 主任研究員
1996: 理化学研究所, 主任研究員
1991 – 1993: 理化学研究所, 主任研究員
1990: 理化学研究所, レーザー科学研究グループ, 主任研究員
1990: 理化学研究所, 国際フロンティア, 主任研究員
1987: The Institute of Physical and Chemical Research, レーザー分子加工グループ・副主任研
1986: 理化学研究所, レーザー分子加工研究グループ, グループリーダー
1986: 理研, その他, 研究員
1985: 理化学研究所, その他, 研究員 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Electronic materials/Electric materials / Electron device/Electronic equipment / Applied materials / Applied physics, general / Science and Engineering / 固体物性Ⅰ(光物性・半導体・誘電体)
Except Principal Investigator
Science and Engineering / Applied materials science/Crystal engineering / Electronic materials/Electric materials … More / Electron device/Electronic equipment / 電子デバイス・機器工学 / Applied materials / Applied materials science/Crystal engineering Less
Keywords
Principal Investigator
AlGaN / GaN / MOCVD / p型 / MBE / 窒化物半導体 / ワイドバンドギャップ / スピン / カーボンナノチューブ / 結晶成長 … More / GaAs / RHEED / 超音速 / 半導体薄膜の結晶成長 / MOVPE / LED / 深紫外発光素子 / MIPE / マイクロプラズマ / Ar^+ laser / パターン化結晶成長 / 原子層エピタキシー / ALE / レーザーMOCV / アルコンイオンレーザ / 有機金属 / カリウム砒素 / 単原子層成長 / temperature modulation technique / boron oxide material / flax crystal growth technique / anti-surfactant method / hetero nonlinear photonic crystal / vertical type Deep UV LED / two light beam in-situ monitoring system / deep UV LED / ドーピング / Al N / ナノテクノロジー / 半導体発光デバイス / 深紫外 / 低転位化 / レーザーリフトオフ / 低転移化 / 縦型LED / 深紫外線 / Al GaN / p型ZnO / フラックス法 / 高効率深紫外波長変換 / 非線型フォトニック結晶 / 量子ドットAlInGaN / 表面核生成機構 / 良質AlGaN / 縦型深紫外LED / 温度変調結晶成長法 / ボロン酸化物 / フラックス結晶成長法 / アンチサーファクタント / ヘテロ非線形フォトニック結晶 / 縦型深紫外発光素子 / 2光束その場観測システム / 深紫外半導体発光素子 / CARBONNANOTUBE / NITRIDE SEMICONDUCTOR / INFRARED CONTROL / SPIN / SINGLE-ELECTRON / QUANTUM DOTS / 単一電子トランジスタ / AlN / 赤外光 / 電子スピン / 選択成長法 / クーロンブロッケード / 単一電子スピン / 半導体量子ドット / 窒化物 / 赤外制御 / 単一電子 / 量子ドット / Hall-effect measurement / Co-doping / Mg-doping / Alternating supply method / Wide bandgap / Deep UV-LED / パルス供給法 / ホール濃度 / サファイヤ / 不純物対 / 第一原理計算 / 高濃度P型 / 交互供給コドーピング / 紫外半導体レーザ / 紫外LED / III族窒化物半導体 / 有機金属気相成長法 / 交互供給成長法 / 貫通転位密度 / コドーピング / Mgドーピング / 交互供給法 / MOCVD法 / 深紫外LED / multiwall nanotube / Coulomb blockade / tunnelingphenomena / conduction / nanotuber / carbon / 化学修飾 / パルス光励起 / 吸収スペクトル / 金属電極 / 多層ナノチューブ / クーロンブロッケイド / トンネル現象 / 電気伝導 / ナノチューブ / カーボン / Micromanipulation Technogoly / Spatial Phase Control Regions / Spontaneous Emission Life Time / Spontaneous Emission Control / Photonic Crystals / 選択結晶成長 / リングレーザー / 無しきい値レーザー / マイクロマニピュレーション法 / マイクロマニピュレイション法 / 位相制御領域 / 自然放出寿命 / 自然放出光制御 / フォトニック結晶 / optical communication / all-Si laser / Er / direct transition / Si quantum dot / quantum size effect / blue light emission / nanocrystalline Si / 量子ドットシステム / レーザー / 光通信 / Siレーザー / 量子サイズ効果 / 青色発光 / ナノ微結晶Si / Quantum dot / Epitaxial growth / SSBE / 吸着原子の脱離過程の観察 / 高速応答の電子線回折観察 / SSBE法 / 拡散を促進 / 素過程を制御 / 並進運動エネルギー / 短パルス超音速ビームエピタキシ法 / エピタキシャル / 短パルスビーム / ガスソースMBE / 量子箱 / 超音速ビーム / Ultra-fine controlled epitaxial growth / High kinetic energy / Epitaxial crystal growth / Supersonic beam / Controllability of epitaxial growth / Control of surface process / Surface processes / Short pulse supersonic beam epitaxy / 反応制御 / 時間分割的な制御 / 高速表面観察 / ミリ秒時間分解 / エピタキシ- / ノズルビーム / 短パルス / 短パルス超音速ノズルビームエピタキシ-法 / 精密な成長制御性 / 短パルス状 / エピタキシャル成長法 / 超音速分子ビーム / 成長制御性 / 素過程 / 短パルス超音速ノズルビームエピタキシャル法 / 量子効果 / ピコ秒分光 / 単一量子井戸 / 多重量子井戸 / 磁場効果 / 電場効果 / SQW / MQW / 量子井戸 / 紫外線分解 / 紫外線殺菌 / 波長可変 / 大面積 / 深紫外光源 / プラズマ励起 / Si基板 / 高出力発光素子 / 大面積発光素子 / 水殺菌 / 高効率 / 水銀灯 / スパッタ装置 / 2光速同時その場観測法 / 高品質GaAlN結晶 / 高出力 / 医療応用 / 水浄化 / 深紫外光 / 電子相互作用 / 量子閉じ込め / 半導体 / 水素終端 / シリコン表面 / 探針 / 原子マニピュレーション / 単原子制御エピタキシー / STM / 走査型トンネル顕微鏡 … More
Except Principal Investigator
AlGaN / GaAs / 超格子 / MOVPE / 選択成長 / 有機金属気相成長法 / 超微細加工 / ヘテロ接合 / 電子波エレクトロニクス / 量子干渉効果 / 電子波デバイス / GaN / III族窒化物半導体 / ナノ構造 / 自己停止機構 / 原子層成長 / メゾスコピック現象 / 光デバイス / In-doping / RHEED / GSMBE / SSBE / 成長モード / 結合量子ドット / Self-limiting effect / Selective growth / MBE / AIGaN / 結晶成長 / 深紫外 / オーミックコンタクト / ガリウム砒素 / ドライエッチング / 塩素 / 量子閉じ込め効果 / フォトルミネッセンス / 量子ナノ構造 / レヤバイレヤ加工 / Si基板 / 縦型FET / パワーFET / ビアホール / Si基板上縦型FET / Si基板上エピ反り低減法 / Si基板上FET / p-化 / レーザー / MOCVD / AlNバッファ / Si基板 / 縦型電子デバイス / 導電性AlNバッファー層 / 縦型FET / AlGaN / Si基板上縦型デバイス / レーザーによるオーミックコンタクト形成 / 自然形成ビアホール / 縦型AlGaNショットキーデバイス / レーザによるp型化 / 導電性AlNバッファーレイヤー / AlGaN縦型 / 縦型パワーFET / 保護膜 / オーミック電極 / 先端機能デバイス / エピタキシャル / デバイス / 格子欠陥 / トランジスタ / ダイオード / センサー / 結晶欠陥 / 窒化物半導体 / Selforganization / Optical device / Growth mode / Heteropitaxy / Surface structure / Dislocation / Structural defets / III-V Nitride / 自己組織化 / ヘテロエピタキシー / 表面構造 / 転位 / 構造欠陥 / resonant tunneling / Coulomb diamond / single-electron transistor / vertical coupled quantum dots / selective area growth / quantum pillar / nitride / アンモニア / 負性微分抵抗 / 共鳴トンネルダイオード / 量子相関素子 / 選択成長法 / 共鳴トンネル / クーロンダイヤモンド / 単一電子トランジスタ / 垂直型結合量子ドット / 量子ピラー / 窒化物 / Activation energy / Hole concentration / P-type conduction / Impurity doping / Alternative source supply / Aluminum Gallium Nitride / Gallium Nitride / 有機金属気相成長 / 原子層成長法 / 原子位置制御 / 紫外レーザー / スーパーラティス / Mg-ドーピング / 活性化エネルギー / 正孔密度 / p型伝導 / 不純物ドーピング / 原料交互供給 / 窒化アルミニウムガリウム / 窒化ガリウム / 有機金属化合物気相成長 / Local and Defect Mode / Opto-electronic Device / Interaction of Light with Photonic Crystal / Control of Light Propagation Characteristics / Control of Radiation Field / Photonic Band Structure / Photonic Band / Photonic Crystal / 光の伝播特性制御 / 半導体微細加工 / 光の伝播特性 / 光の局在 / フォトニックバンドギャップ / 光と物質の相互作用 / 局在モード / 光と物質の互用作用 / 光伝播特性の制御 / フォトニック・バンドギャップ / 局在モードと欠陥モ-ド / 光エレクトロニクス素子 / 光波とフォトニック結晶との相互作用 / 光波伝播の制御 / 輻射場の制御 / フォトニックバンド構造 / フォトニックバンド / フォトニック結晶 / Quantum dot / フォートルミネセンス / ガスソースMBE / 超音速ビーム / Inドーピング / 量子箱 / Fibonacci progression / X-ray diffraction / Atomic layer superlattice / Quasi-crystal / Atomic Layer Epitaxy / フィボナッチ数列 / X線回折 / 原子層超格子 / 準結晶 / Quantum wire laser / Nano Sturcture / Nano Fabication / Self-organized growth / Coupled Quantum Dots / Quantum Dot / Single electron devices / 表面修飾 / 再成長 / ドット形成過程 / 表面エネルギー / 表面吸着 / 量子細線レーザー / 微細加工 / 自己形成 / 量子ドット / 単電子デバイス / Quantum confinement effect / Photoluminescnec / Quantum Nano-structures / Atomic Layr Epitaxy / シングル・エレクトロニクス / トンネル現象 / 単電子エレクトロニクス / 単電子トランジスタ / 超高速エレクトロニクス / ナノ・パワー・エレクトロニクス / クーロン・ブロッケード / ガリウムヒ素 / 原子層エッチング / 自動停止 / デジタルエッチング / 原子層 / FIB / ALE / 歪超格子 / 混晶量子井戸 / 混晶選択成長 / 【III】-【V】混晶 / AIN / その場観察 / 縦型発光素子 / AlN / 量子井戸 / 深紫外発光素子 / 縱型発光素子 / 結晶性 / キャリア濃度 / 窒素ラジカル / MIS構造 / p形ドーピング / RF-MBE / InGaN / InN / インターミキシング / ヘテロ界面 / p型ドーピング / 分子線エピタキシー法 / 分子線エピタキシー / 窒化インジウム / エピタキシャル成長 / ポテンシャルスパッタリング / 欠陥 / 水素 / シリコン / 電子状態制御 / ダイヤモンド / グラファイト / 多価イオン / 物質設計 / 内殻励起 / 非平衡新物質 / 欠陥反応 / 分子メス / 双安定性 / 原子操作 / 電子励起原子移動 / メゾンスコピック現象 / photoassisted decomposition / atomic layer epitaxy / triethylgallium / laser MOVPE / gallium arsenide Less
  • Research Projects

    (38 results)
  • Research Products

    (151 results)
  • Co-Researchers

    (81 People)
  •  Development of vertical AlGaN high power FET on Si substrate using spontaneous via holes

    • Principal Investigator
      黒瀬 範子
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Ritsumeikan University
  •  Development of the monolithic AlGaN deep ultraviolet sensing system on a Si substrate

    • Principal Investigator
      IWATA NAOTAKA
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Toyota Technological Institute
  •  Dynamic micro-plasma excited AlGaN high power DUV light emitter operated at around 10W class powerPrincipal Investigator

    • Principal Investigator
      Aoyagi Yoshinobu
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Ritsumeikan University
  •  Development of new high power deep UV light emitting devicePrincipal Investigator

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Ritsumeikan University
  •  2光束成長その場観察技法を用いた縦型深紫外発光素子の高出力化に関する研究

    • Principal Investigator
      TAKEUCHI Misaichi
    • Project Period (FY)
      2009 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Ritsumeikan University
  •  AlGaN系縦型高効率深紫外発光デバイスの研究

    • Principal Investigator
      KAWASAKI Koji
    • Project Period (FY)
      2007
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Tokyo Institute of Technology
  •  Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties

    • Principal Investigator
      NANISHI Yasushi
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Ritsumeikan University
  •  Development of deep UV light emitting devices using nano-technology and the applicationPrincipal Investigator

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      2003 – 2007
    • Research Category
      Grant-in-Aid for Creative Scientific Research
    • Research Institution
      Ritsumeikan University
      Tokyo Institute of Technology
  •  Heteroepitaxy in III-nitride semiconductors by means of control of surface structures in atomistic scale.

    • Principal Investigator
      TANAKA Satoru
    • Project Period (FY)
      2002 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Hokkaido University
  •  INFRARED LIGHT CONTROL OF SINGLE-ELECTRON SPIN IN THE NITRIDE QUANTUM DOTS AND ITS APPLICATIONPrincipal Investigator

    • Principal Investigator
      KAWASAKI KOJI, 青柳 克信
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied physics, general
    • Research Institution
      Tokyo Institute of Technology
  •  Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applicationsPrincipal Investigator

    • Principal Investigator
      HIRAYAMA Hideki, 青柳 克信
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      RIKEN
      Tokyo Institute of Technology
  •  Study on vertical coupled quantum dots fabrication using selective area growth of nitride nano-pillars

    • Principal Investigator
      KAWASAKI Koji
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
  •  Control of spin transport in carbon nanotubesPrincipal Investigator

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
      The Institute of Physical and Chemical Research
  •  低速多価イオンビームによる原子操作

    • Principal Investigator
      目黒 多加志
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (B)
    • Review Section
      Science and Engineering
    • Research Institution
      The Institute of Physical and Chemical Research
  •  Study on Impurity Co-Doping by Atomic Positional Control

    • Principal Investigator
      IWAI Souhachi
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      RIKEN (The Institute of Physical & Chemical Research)
  •  電子励起を用いた原子操作法の開発

    • Principal Investigator
      篠塚 雄三
    • Project Period (FY)
      1998
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Yamaguchi University
  •  Development of Photonic Crystals and Control of Radiation Field

    • Principal Investigator
      INOUE Kuon
    • Project Period (FY)
      1998 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Hokkaido University
  •  Fabrication of Photonic Crystals with Spatial Phase Control Regions and their applications to Optical DevicesPrincipal Investigator

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      1998 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (B)
    • Review Section
      Science and Engineering
    • Research Institution
      Tokyo Institute of Technology
      The Institute of Physical and Chemical Research
  •  半導体量子閉じ込め構造間の電子相互作用による秩序形成と光相互作用に関する共同研究Principal Investigator

    • Principal Investigator
      青柳 克信
    • Project Period (FY)
      1997
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Field
      固体物性Ⅰ(光物性・半導体・誘電体)
    • Research Institution
      The Institute of Physical and Chemical Research
  •  Crystal growth of III-V nitride semiconductor and its applications by short pulse supersonic beam epitaxy

    • Principal Investigator
      SHEN Xu-Qiang
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The Institute of Physical and Chemical Research (RIKEN)
  •  "Development of Novel Technology for Integratio of Single Electron Devices"

    • Principal Investigator
      KAWABE Mitsuo
    • Project Period (FY)
      1996 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      TSUKUBA UNIVERSITY
  •  Development and Application of Bule Light-Emitting Nanocrystalline Si MaterialsPrincipal Investigator

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The Institute of Physical and Chemical Research (RIKEN)
  •  Periodic Modulation of Superlattice by Atomic Layer Epitaxy and Its Application to synthesis of Novel Functional Materials

    • Principal Investigator
      IWAI Sohachi
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The Institute of Physical and Chemical research (RIKEN)
  •  Development of reactively controlled super-sonic nozzle beam epitaxial growth techniquePrincipal Investigator

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The Institute of Physical and Chemical Research (RIKEN)
  •  原子層エピタキシ-選択成長による低次元量子構造作製に関する研究

    • Principal Investigator
      岩井 荘八
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The Institute of Physical and Chemical Research
  •  Short pulse Supersonic Beam EpitaxyPrincipal Investigator

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      THE INSTITUTE OF PHYSICAL AND CHEMICAL RESEARCH (RIKEN)
  •  Fabrication and Characterization of Atomic Layr Controlled Quantum Nano-structures

    • Principal Investigator
      IWAI Sohachi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The Institute of Physical and Chemical research (RIKEN)
  •  メゾスコピック領域における電子波干渉効果

    • Principal Investigator
      難波 進
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagasaki Institute of Applied Science
  •  クーロン・ブロッケードを利用したナノパワー超高速エレクトロニクスの研究

    • Principal Investigator
      菅野 卓雄
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for Co-operative Research (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Toyo University
  •  電子波デバイスのための極限構造の制御と評価

    • Principal Investigator
      蒲生 健次
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  原子層エッチング技術の開発研究

    • Principal Investigator
      目黒 多加志
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The Institute of Physical and Chemical Research
  •  電子波デバイスのための極限構造の制御と評価

    • Principal Investigator
      蒲生 健次
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  走査型トンネル顕微鏡を用いたシリコンの単原子制御エピタキシーPrincipal Investigator

    • Principal Investigator
      青柳 克信
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The Institute of Physical and Chemical Research
  •  電子波デバイスのための極限構造の制御と評価

    • Principal Investigator
      蒲生 健次
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  レ-ザ-単原子層制御エピタキシ-の成長機構の解明と単原子層制御ヘテロ構造の製作

    • Principal Investigator
      IWAI Sohachi
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The Institute of Physical and Chemical Research
  •  混晶の薄膜および界面における量子効果とその応用に関する研究

    • Principal Investigator
      生駒 俊明
    • Project Period (FY)
      1986 – 1987
    • Research Category
      Grant-in-Aid for Special Project Research
    • Research Institution
      The University of Tokyo
  •  Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devicesPrincipal Investigator

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      1986 – 1987
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The Institute of Physical and Chemical Research
  •  混晶系薄膜材料における量子効果のピコ秒分光による評価とその面内制御に関する研究Principal Investigator

    • Principal Investigator
      青柳 克信
    • Project Period (FY)
      1985
    • Research Category
      Grant-in-Aid for Special Project Research
    • Research Institution
      The Institute of Physical and Chemical Research

All 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 Other

All Journal Article Presentation Book Patent

  • [Book] 基礎からわかるナノデバイス2011

    • Author(s)
      青柳克信, その他
    • Total Pages
      252
    • Publisher
      コロナ社
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Book] 基礎からわかるナノデバイス2011

    • Author(s)
      青柳克信、石橋幸治、高柳英明、中ノ勇人、平山祥郎
    • Publisher
      コロナ社
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Book] 先端材料光物性2008

    • Author(s)
      青柳克信
    • Publisher
      コロナ社
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Book] 光学設計2006

    • Author(s)
      青柳 克信
    • Publisher
      情報機構
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018

    • Author(s)
      Noriko Kurose, Kota Matsumoto, Fumihiko Yamada, Teuku Muhammad Roffi, Itaru Kamiya, Naotaka Iwata, and Yoshinobu Aoyagi
    • Journal Title

      AIP Advances

      Volume: 8 Issue: 1 Pages: 015329-015329

    • DOI

      10.1063/1.5009970

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H03998
  • [Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018

    • Author(s)
      Noriko Kurose, Kota Matsumoto, Fumihiko Yamada, Teuku Muhammad Roffi, Itaru Kamiya, Naotaka Iwata, and Yoshinobu Aoyagi
    • Journal Title

      AIP ADVANCES

      Volume: 8

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-16H04357
  • [Journal Article] マイクロプラズマ励起深紫外発光素子の開発と深紫外線の医療応用2015

    • Author(s)
      黒瀬範子、青柳克信
    • Journal Title

      レーザー学会誌

      Volume: 43 Pages: 677-682

    • NAID

      130007957139

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Journal Article] Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)2014

    • Author(s)
      N. Kurose, K. Shibano, T. Araki, Y. Aoyagi
    • Journal Title

      AIP advances

      Volume: 4 Issue: 2 Pages: 02712211-6

    • DOI

      10.1063/1.4867090

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Journal Article] Development of High Power, Large Area, Deep Ultraviolet Light Emitting Device using Dynamic Micro-plasma Excitation of AlGaN Multi-quantum Wells (MIPE)2014

    • Author(s)
      黒瀬範子、青柳克信
    • Journal Title

      IEEJ Transactions on Fundamentals and Materials

      Volume: 134 Issue: 5 Pages: 307-314

    • DOI

      10.1541/ieejfms.134.307

    • NAID

      130004869362

    • ISSN
      0385-4205, 1347-5533
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Journal Article] Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor2014

    • Author(s)
      Noriko Kurose, Naotaka Iwata, Itaru Kamiya, Yoshinobu Aoyagi
    • Journal Title

      AIP ADVANCES

      Volume: 4 Issue: 12 Pages: 1230071-1230077

    • DOI

      10.1063/1.4905135

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Journal Article] A 2-inch large-size deep ultraviolet light-emitting device using dynamically controlled micro-plasma-excited AlGaN2013

    • Author(s)
      Y. Aoyagi and N. Kurose
    • Journal Title

      Applied Physics Letters

      Volume: 102

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Journal Article]2013

    • Author(s)
      Y. Aoyagi, N. Kurose
    • Journal Title

      Applied PhysicsLetters

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Journal Article] Formation of AlGaN and GaN epitxial layer with high p-carrier concentration by pulse supply of source2012

    • Author(s)
      Y. Aoyagi, M. Takeuchi, S. Iwai, H. Hirayama
    • Journal Title

      AIP Advances

      Volume: 2 Issue: 1 Pages: 0012177-0012183

    • DOI

      10.1063/1.3698156

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Journal Article] High-sensitivity ozone sensing using 280nm deep ultraviolet light-emitting diode for depletion of natural hazard ozone2012

    • Author(s)
      Y. Aoyagi, M. Takeuchi, K. Yoshida, M. Kurouchi, Y. Nanishi, H. Sugano, Y. Ahiko, H. Nakamura
    • Journal Title

      Journal of Environmental Protection

      Volume: 3 Pages: 695-699

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Journal Article]2012

    • Author(s)
      Y. Aoyagi, M. Takeuchi, S. Iwai, H.Hirayama
    • Journal Title

      AIP Advances

      Pages: 12177-12183

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Journal Article]2012

    • Author(s)
      Y. Aoyagi, M. Takeuchi, K. Yoshida, M. Kurouchi, Y. Nanishi, H. Sugano, Y. Ahiko,H. Nakamura
    • Journal Title

      Journal of Environmental Protection

      Volume: 137 Pages: 1215-1218

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Journal Article] High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition2011

    • Author(s)
      Y.Aoyagi, M.Takeuchi, S.Iwai, H.Hirayama
    • Journal Title

      Appl.Phys.Lett.

      Volume: 99 Issue: 11

    • DOI

      10.1063/1.3641476

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360013, KAKENHI-PROJECT-22246051
  • [Journal Article]2011

    • Author(s)
      Y. Aoyagi, M. Takeuchi, S. Iwai, H.Hirayama
    • Journal Title

      Appl. Phys. Letters

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Journal Article] Inactivation of bacterial viruses in water using deep ultraviolet semiconductor light-emitting diode2011

    • Author(s)
      Y.Aoyagi, et.al.
    • Journal Title

      J.Environmental Engineering

      Volume: 137 Issue: 12 Pages: 1215-1218

    • DOI

      10.1061/(asce)ee.1943-7870.0000442

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Journal Article] AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current2009

    • Author(s)
      T.Nanjo, M.Takeuchi, A.Imai, M.Suita, T.Oishi, Y.Abe, E.Yagyu, T.Kurata, Y.Tokuda, Y.Aoyagi
    • Journal Title

      ELECTRONICS LETTERS 45

      Pages: 1346-1347

    • Peer Reviewed
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Journal Article] Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD2007

    • Author(s)
      M.Takeuchi, H.Shimizu, R.Kajitani, K.Kawasaki, Y.Kumagai, A.Koukits, Y.Aoyagi
    • Journal Title

      J. Crystal Growth, 298

      Pages: 336-336

    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Journal Article] Vertical AIGaN deep ultraviolet light emitting diode emitting 322nm fabricated by the laser lift-off technique2007

    • Author(s)
      K. Kawasaki, Y. Aoyagi
    • Journal Title

      Applied Physics Letters 89

      Pages: 261114-261116

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19032004
  • [Journal Article] '光学設計2006

    • Author(s)
      青柳 克信
    • Journal Title

      情報機構

      Pages: 455-465

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Journal Article] Ultraviolet Second-Harmonic Generation and sum-Frequency Mixing in Two-Dimensional Nonlinear Optical Polymer Photonic Crystals2006

    • Author(s)
      Shin-ichiro Inoue, Y. Aoyagi
    • Journal Title

      Jpn. J. Appl. Phys. 45・8A

      Pages: 6103-6107

    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Journal Article] Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique2006

    • Author(s)
      K.Kawasaki, C.Koike, Y.Aoyagi, M.Takeuchi
    • Journal Title

      Appl. Phys. Lett. 89・25

      Pages: 261114-261114

    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Journal Article] Fabrication of nonlinear photonic crystals and their applications2005

    • Author(s)
      S.Inoue, Y.Aoyagi
    • Journal Title

      Proc. SPIE Int. Soc. opt. Eng. 5732

      Pages: 438-448

    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Journal Article] Four-electron shell structures anad an interacting two-electron system in carbon nanotube quantum dots2005

    • Author(s)
      S.Moriyama, T.Fuse, M.Suzuki, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Physical Review Letters 94

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205015
  • [Journal Article] Design and fabrication of two-dimensional photonic crystals with predetermined nonlinear optical properties2005

    • Author(s)
      S.Inoue, Y.Aoyagi
    • Journal Title

      Physical Review letters 94・10

    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Journal Article] Importance of electron-electron interactions and Zeeman splitting in signle-wass carbon nanotube quantum dots2005

    • Author(s)
      S.Moriyama, T.Fuse, M.Suzuki, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Physica E{26}

      Pages: 473-476

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205015
  • [Journal Article] Short Wavelength and High- Efficiency Operation of Deep UV LED Using Quaternary InAlGaN2004

    • Author(s)
      H.Hirayama, K.Akita, T.Kyono, T.Nakamura, Y.Aoyagi
    • Journal Title

      The Review of Laser Engineering, Special Issue on Present Status and Future Prospect of Ultraviolet LEDs and LDs Based on Nitride Semiconductors Vol.32, no.6

      Pages: 402-409

    • NAID

      10013161084

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Carbon nanotubes as a building block of quantum dot devices2004

    • Author(s)
      M.Suzuki, K.Tsuya, S.Moriyama, T.Fuse, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Physica E{24}

      Pages: 10-13

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205015
  • [Journal Article] Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs2004

    • Author(s)
      T.Obata, H.Hirayama, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Phys. Stat. Sol.(a) 201, 12

      Pages: 2803-2807

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Selecting single quantum dots from a bundle of single-wall carbon nanotubes using effect of the lareg current flow2004

    • Author(s)
      S.Moriyama, T.Fuse, M.Suzuki, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Science and Technology of Advanced Materials {5}

      Pages: 613-615

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205015
  • [Journal Article] Electrical transport in semiconducting single-wall carbon nanotubes2004

    • Author(s)
      S.Moriyama, K.Toratani, D.Tsuya, M.Suzuki, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Physica E{24}

      Pages: 46-49

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205015
  • [Journal Article] Two-electron and four-electron periodicity in single-wall carbon nanotube quantum dots2004

    • Author(s)
      T.Fuse, S.Moriyama, Y.Aoyagi, M.Suzuki, K.Ishibashi
    • Journal Title

      Superlattices and Microstructures {34}

      Pages: 377-382

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205015
  • [Journal Article] Surprisingly low built-in electric fields in quaternary AlInGar heterostructures2004

    • Author(s)
      S.Anceau, P.Lefebvre, T.Suski, S.P.Lepkowski, H.Teisseyre, L.H.Dmowski, L.Konczewicz, A.Kaminska, A.Suchocki, H.Hirayama, Y.Aoyagi
    • Journal Title

      Phys. Stat. Sol.(a) vol.201 no.2

      Pages: 190-194

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004

    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      Proc. SPIE Int. Soc. Opt. Eng. 5359

      Pages: 422-433

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] ナノテクノロジーと深紫外発光素子の開発2004

    • Author(s)
      青柳 克信
    • Journal Title

      固体物理 39

      Pages: 265-278

    • NAID

      40006228114

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Journal Article] Effect of the large current flow on the low temperature transport properties in a bundle of single-wall carbon nanotubes2003

    • Author(s)
      T.Fuse, S.Moriyama, M.Suzuki, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Applied Physics Letters {83}

      Pages: 3803-3805

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205015
  • [Journal Article] Determination of Built-in Electric Fields in Quaternary InAlGaN Heterostructures2003

    • Author(s)
      H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
    • Journal Title

      Appl. Phys. Letters vol.82, no.10

      Pages: 1541-1543

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Recent Progress of UV LEDs-using Quaternary InAlGaN-Toward Shorter Wavelength and High-Efficiency Operation--2003

    • Author(s)
      H.Hirayama, K.Akita, T.Nakamura, M.Kiyama, Y.Aoyagi
    • Journal Title

      Technical Report of IEICE. ED2003-134

    • NAID

      110003174988

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] High-efficiency UV-emission at 345nm from InAlGaN light-emitting diodes2002

    • Author(s)
      A.Kinoshita, H.Hirayama, T.Yamabi, A.Hirata, Y.Aoyagi
    • Journal Title

      GaN and Related Alloys-2001, Mater. Res. Soc. 693

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Fabrication of Low Threading Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices2002

    • Author(s)
      H.Hirayama, M.Ainoya, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl. Phys. Lett. vol.80, no.12

      Pages: 2057-2059

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Growth of (In)AlGaN Compound Semiconductors and their Application to 300-nm-Band High-Intensity UV-LEDs2002

    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      The Review of Laser Engineering Vol.30, No.6

      Pages: 308-314

    • NAID

      130004465336

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Effect of thermal annealing on the Pd/Au contact to p-type A10.15Ga0.85N2002

    • Author(s)
      B.H.Jun, H.Hirayama, Y.Aoyagi
    • Journal Title

      Jan. J. Appl. Phys. Vol.41 part 1, no.2A

      Pages: 581-582

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002

    • Author(s)
      H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl. Phys. Lett. vol.80, no.9

      Pages: 1589-1591

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells2002

    • Author(s)
      H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl. Phys. Lett. vol.80 no.2

      Pages: 37-39

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Investigation of the optimum growth conditions of wide bandgap InAlGaN quaternary for UV-LEDs2002

    • Author(s)
      T.Yamabi, A.Kinoshita, H.Hirayama, A.Hirata, Y.Aoyagi
    • Journal Title

      GaN and Related Alloys-2001, Mater. Res. Soc. 693

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy2002

    • Author(s)
      Koji Kawasaki, Ikuo Nakamatsu, Hideki Hirayama, Kazuo Tsutsui, Yoshinobu Aoyagi
    • Journal Title

      Journal of Crystal Growth 243

      Pages: 129-133

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205015
  • [Journal Article] Growth of AlN-SiC Solid Solutions by Sequential Supply Epitaxy2002

    • Author(s)
      A.Avramescu, H.Hirayama, Y.Aoyagi, S.Tanaka
    • Journal Title

      J. Crystal Growth vol.234

      Pages: 435-439

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters2002

    • Author(s)
      H.Hirayama, T.Yamanaka, A.Kinoshita, H.Hiraoka, A.Hirata, Y.Aoyagi
    • Journal Title

      GaN and Related Alloys-2001, Mater. Res. Soc 693

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Development of 300 nm Band High-Intensity Ultraviolet (UV) LEDs using Quaternary InAlGaN2002

    • Author(s)
      H.Hirayama, A.Kinoshita, Y.Aoyagi
    • Journal Title

      Oyobuturi Vol.71, No.2

      Pages: 204-208

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] 330nm-Band High-Efficiency UV LEDs using Quaternary InAlGaN2002

    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      Japanese Journal of Crystal Growth vol.29, no.3

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] High Doped 'p-Type GaN Grown by Alternative Co-Doping Technique2002

    • Author(s)
      S.Iwai, H.Hirayama, Y.Aoyagi
    • Journal Title

      Material Research Society Symposium Proceeding Vol.719

      Pages: 3-9

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures2002

    • Author(s)
      H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
    • Journal Title

      Phys. Stat. Sol.(b) vol.243, no.3

      Pages: 764-768

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] Marked enhancement of 320-360 nm UV emission in quaternary InxAlyGal-x-yN with In-segregation effect2002

    • Author(s)
      H.Hirayama, T.Yamabi, A.Kinoshita, Y.Enomoto, A.Hirata, T.Araki, Y.Nanishi, Y.Aoyagi
    • Journal Title

      Appl. Phys. Lett. vol.80, no.2

      Pages: 207-209

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Journal Article] 340nm-band bright UV-LEDs using Quaternary InAlGaN active region2001

    • Author(s)
      H.Hirayama, A.Kinoshita, M.Ainoya, T.Yamanaka, A.Hirata, Y.Aoyagi
    • Journal Title

      Institute of Physics (IOP) Conference Series No.170: Chapter 2

      Pages: 195-200

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001
  • [Patent] p型窒化ガリウム系化合物半導体を製造する方法および装置、並びに、半導体素子を製造する装置2017

    • Inventor(s)
      黒瀬範子、青柳克信
    • Industrial Property Rights Holder
      立命館大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-16H04357
  • [Patent] 導電性を有する絶縁体層およびその製造方法並びに窒化物半導体素子およびその製造方法2014

    • Inventor(s)
      青柳克信、黒瀬範子
    • Industrial Property Rights Holder
      学校法人立命館
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-051186
    • Filing Date
      2014-03-14
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Patent] 縦型発光ダイオードおよび結晶成長法2013

    • Inventor(s)
      青柳克信、黒瀬範子、柴野謙太朗、荒木努
    • Industrial Property Rights Holder
      学校法人立命館
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-128015
    • Filing Date
      2013-06-18
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Patent] 深紫外発光素子2013

    • Inventor(s)
      青柳克信、黒瀬範子
    • Industrial Property Rights Holder
      学校法人立命館
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-241850
    • Filing Date
      2013-11-22
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Patent] AlN層の製造方法およびAlN2011

    • Inventor(s)
      青柳克信 武内道一
    • Industrial Property Rights Holder
      立命館大学
    • Industrial Property Number
      2011-151137
    • Filing Date
      2011-07-07
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] 窒化物半導体発光素子およ2011

    • Inventor(s)
      太田征孝、青柳克信
    • Industrial Property Rights Holder
      シャープ(株)、立命館大学
    • Industrial Property Number
      2011-004714
    • Filing Date
      2011-01-13
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] オゾン濃度測定装置2011

    • Inventor(s)
      吉田薫, 武内道一, 青柳克信, 菅野裕靖, 阿彦由美, 菅野勝靖, 中村広隆
    • Industrial Property Rights Holder
      吉田薫, 武内道一, 青柳克信, 菅野裕靖, 阿彦由美, 菅野勝靖, 中村広隆
    • Industrial Property Number
      2011-038925
    • Filing Date
      2011-02-24
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] 結晶成長方法および半導体素子2011

    • Inventor(s)
      青柳克信, 武内道一, 上田吉裕, 太田征孝
    • Industrial Property Rights Holder
      青柳克信, 武内道一, 上田吉裕, 太田征孝
    • Industrial Property Number
      2011-042479
    • Filing Date
      2011-02-28
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] オゾン濃度測定装置2011

    • Inventor(s)
      吉田薫、青柳克信
    • Industrial Property Rights Holder
      立命館大学, (有)光電鍍工業所
    • Industrial Property Number
      2011-038925
    • Filing Date
      2011-02-24
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] オゾン濃度測定装置2011

    • Inventor(s)
      吉田薫、青柳克信
    • Industrial Property Rights Holder
      立命館大学, (有)光電鍍工業所
    • Industrial Property Number
      2011-231347
    • Filing Date
      2011-10-21
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] Crystal growth method and2011

    • Inventor(s)
      青柳克信
    • Industrial Property Rights Holder
      立命館大学,シャープ(株)
    • Filing Date
      2011-03-03
    • Overseas
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] 窒化物半導体発光素子および半導体光学装置2011

    • Inventor(s)
      太田征孝, 上田吉裕, バッカロ, パフロ, 青柳克信
    • Industrial Property Rights Holder
      太田征孝, 上田吉裕, バッカロ, パフロ, 青柳克信
    • Industrial Property Number
      2011-004714
    • Filing Date
      2011-01-13
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] オゾン濃度測定装置2011

    • Inventor(s)
      吉田薫、武内道一、青柳克信、中村広隆、菅野裕晴、阿彦由美、菅野勝靖
    • Industrial Property Rights Holder
      (有)光電鍍工業、(独)都立産業技術研究センター、(学)立命館
    • Industrial Property Number
      2011-038925
    • Filing Date
      2011-02-24
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Patent] 結晶成長方法および半導体素子2010

    • Inventor(s)
      青柳克信、武内道一、上田吉裕、太田征孝
    • Industrial Property Rights Holder
      青柳克信、武内道一、上田吉裕、太田征孝
    • Industrial Property Number
      2010-155388
    • Filing Date
      2010-07-08
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] 結晶成長方法および半導体素子2010

    • Inventor(s)
      青柳克信、武内道一、上田吉裕、太田征孝
    • Industrial Property Rights Holder
      (学)立命館、シャープ(株)
    • Industrial Property Number
      2010-155388
    • Filing Date
      2010-07-08
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Patent] 結晶成長方及び半導体素子2010

    • Inventor(s)
      青柳克信 武内道一
    • Industrial Property Rights Holder
      立命館大学
    • Industrial Property Number
      2010-155388
    • Filing Date
      2010-07-08
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Patent] 「加熱プレス機」2007

    • Inventor(s)
      川崎宏治, 青柳克信
    • Industrial Property Rights Holder
      東京工業大学
    • Industrial Property Number
      2007-018879
    • Filing Date
      2007
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Patent] 窒化物系深紫外発光素子およびその製造方法2006

    • Inventor(s)
      青柳 克信
    • Industrial Property Rights Holder
      東京工業大学
    • Filing Date
      2006-03-20
    • Description
      「研究成果報告書概要(和文)」より
    • Overseas
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Patent] AlGaN系深紫外発光素子およびその製造方法2005

    • Inventor(s)
      青柳 克信
    • Industrial Property Rights Holder
      東京工業大学
    • Industrial Property Number
      2005-092801
    • Filing Date
      2005-03-29
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Patent] レーザーリフトオフ法およびレーザーリフトオフ装置2005

    • Inventor(s)
      川崎宏治, 青柳克信
    • Industrial Property Rights Holder
      東京工業大学
    • Industrial Property Number
      2005-342734
    • Filing Date
      2005-11-28
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Patent] 半導体成長用基板および半導体膜の製造方法2004

    • Inventor(s)
      青柳 克信
    • Industrial Property Rights Holder
      東京工業大学
    • Patent Publication Number
      2006-185962
    • Filing Date
      2004-12-24
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Presentation] Laser-induced local activation of Mg-doped GaN and AlGaN for high power vertical devices2019

    • Author(s)
      N.Kurose and Y. Aoyagi
    • Organizer
      SPIE Photonics West 2019
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H04357
  • [Presentation] レーザを用いた局所p-GaNオーミック電極形成法の開発2018

    • Author(s)
      川﨑輝尚、黒瀬範子、松本晃太、岩田直高、青柳克信
    • Organizer
      応用物理学会秋季学術講演会2018 シンポジウム
    • Data Source
      KAKENHI-PROJECT-16H04357
  • [Presentation] Realization of conductive aluminum nitride epitaxial layer on silicon substrate by forming spontaneous nano size via-holes2018

    • Author(s)
      N.Kurose and Y. Aoyagi
    • Organizer
      International Conference on Advanced Materials & Nanotechnology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04357
  • [Presentation] MgドープGaNのレーザー誘起による活性化とその局所制御2017

    • Author(s)
      松本滉太,黒瀬範子,岩田直高, 山田郁彦,神谷格,青柳克信
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04357
  • [Presentation] MgドープGaNへのレーザー照射による局所活性化と結晶性のその場観測2017

    • Author(s)
      松本滉太、黒瀬範子、山田郁彦、神谷格、青柳克信、岩田直高
    • Organizer
      IEEE Metro Area Workshop in Nagoya
    • Data Source
      KAKENHI-PROJECT-15H03998
  • [Presentation] MgドープGaNのレーザー誘起による活性化とその局所制御2017

    • Author(s)
      松本滉大、黒瀬範子、下野貴史、岩田直高、山田郁彦、神谷格、青柳克信
    • Organizer
      第78回秋季応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03998
  • [Presentation] Realization of Conductive AlN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET2016

    • Author(s)
      Noriko Kurose, Kota Ozeki, Tsutomu Araki, Naotaka Iwata, Itaru Kamiya, and Yoshinobu Aoyagi
    • Organizer
      the 43rd International Symposium on Compound Semiconductors
    • Place of Presentation
      Toyama International Conference Center(Toyama, Toyama),Japan
    • Year and Date
      2016-06-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04357
  • [Presentation] Realization of Conductive AlN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET2016

    • Author(s)
      Noriko Kurose, Kota Ozeki, Tsutomu Araki, Naotaka Iwata, Itaru Kamiya, and Yoshinobu Aoyagi
    • Organizer
      The 43rd International Symposium on Compound Semiconductors (ISCS)
    • Place of Presentation
      Toyama International Conference Center (富山県富山市)
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03998
  • [Presentation] Formation of spontaneous nano-size via-holes to grow conductive AlN buffer layer on Si substrate for vertical AlGaN high power FET2016

    • Author(s)
      Noriko Kurose and Yoshinobu Aoyagi
    • Organizer
      18th International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      San Diego, California, USA
    • Year and Date
      2016-07-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04357
  • [Presentation] Si基板上縦型高出力AlGaN FET実現を目指した導電性AlNバッファ層(v-AlN層)の形成2016

    • Author(s)
      Noriko Kurose, Kota Ozeki, Tsutomu Araki, and Yoshinobu Aoyagi
    • Organizer
      応用物理学会秋季学術講演会2016 シンポジウム
    • Place of Presentation
      新潟コンベンションセンター (新潟県、新潟市)
    • Year and Date
      2016-09-16
    • Data Source
      KAKENHI-PROJECT-16H04357
  • [Presentation] Fabrication of nonlinear photonic crystal and its application to UV laser2015

    • Author(s)
      Y. Aoyagi, N. Kurose and S. Inoue
    • Organizer
      International Display Workshop 2015
    • Place of Presentation
      大津プリンスホテル(滋賀県 大津市)
    • Year and Date
      2015-12-10
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] A new technique to make an insulating AlN thin film to be conductive by spontaneous via holes formed by MOCVD and its application to realize vertical UVLED on N+Si substrate2015

    • Author(s)
      N. Kurose, Y. Aoyagi
    • Organizer
      AVS international conference
    • Place of Presentation
      SanJose, USA
    • Year and Date
      2015-10-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] A New Technique to Make an Insulating AlN Thin Film to be Conductive by Spontaneous Via Holes formed by MOCVD and its Application to realize Vertical UV LED on n+Si Substrate2015

    • Author(s)
      Noriko Kurose and Yoshinobu Aoyagi
    • Organizer
      AVS 62nd International Symposium & Exhibition
    • Place of Presentation
      San Jose Convention Center, San Jose, California, USA
    • Year and Date
      2015-10-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03998
  • [Presentation] Realization of high performance of organic devices by nanoscale control of surface and interface2015

    • Author(s)
      Y. Aoyagi
    • Organizer
      The 9th International Nanotechnology/MEMS Seminar
    • Place of Presentation
      静岡大学(静岡県 浜松市)
    • Year and Date
      2015-12-08
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] Formation of High Conductive n-AlN using Spontaneous Via Holes and Development of Substrate-removal-free Vertical DUV LED (RefV-LED)2014

    • Author(s)
      N.Kurose, Y.Aoyagi
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta, U.S.A
    • Year and Date
      2014-05-20
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] Novel Vertical AlGaN Deep Ultra Violet Photo-detector on n+Si Substrate using Spontaneous Via Holes Growth Technique2014

    • Author(s)
      Kota Ozeki, Noriko Kurose, Naotaka Iwata*, Kentaro Shibano, Tsutomu Araki, Itaru Kamiya* and Yoshinobu Aoyagi
    • Organizer
      Solid State Device and Materials
    • Place of Presentation
      筑波国際会議場 (茨城県、つくば市)
    • Year and Date
      2014-09-11
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] Development of new type vertical deep ultra-violet light emitting Device(RefV-LED)2014

    • Author(s)
      N.Kurose, Y.Aoyagi
    • Organizer
      The 21th International Display Workshops
    • Place of Presentation
      朱鷺メッセ、新潟コンベンションセンター(新潟県、新潟市)
    • Year and Date
      2014-12-04
    • Invited
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] Two inch large areaDUV AlGaN light emitter using micro-plasmaexcitation2012

    • Author(s)
      N. Kurose, Y. Aoyagi
    • Organizer
      Iinternational Workshop on Nitride Semiconductors
    • Place of Presentation
      札幌コンベンションセンター (北海道)
    • Year and Date
      2012-10-16
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] 高出力大面積マイクロプラズマ励起AlGaN深紫外発光素子の開2012

    • Author(s)
      黒瀬範子、青柳克信
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-10-11
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Development oflarge area micro-plasma-excited AlGaNdeep ultraviolet light device (MIPE) fordisinfection of water2012

    • Author(s)
      N. Kurose, Y. Aoyagi
    • Organizer
      WaterContamination Emergency Conference 5
    • Place of Presentation
      Mulheim an der Ruhr(Germany).
    • Year and Date
      2012-11-19
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Development of new deep ultra-violet light emitter usingmicro-plasma excitation of AlGaN and itsapplication2012

    • Author(s)
      N. Kurose, Y. Aoyagi
    • Organizer
      International Symposium onGaN related compounds
    • Place of Presentation
      St.Petersburg (Russia)
    • Year and Date
      2012-07-16
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Large areamicro-plasma exited AlGaN deep ultravioket light emitter2012

    • Author(s)
      N. Kurose, Y. Aoyagi
    • Organizer
      InternationalDisplay Workshop
    • Place of Presentation
      京都国際会議場 (京都府)
    • Year and Date
      2012-12-04
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] マイクロプラズマを用いた深紫外発光素子の原理実証研究2012

    • Author(s)
      黒瀬範子、青柳克信
    • Organizer
      応用物理学会
    • Place of Presentation
      名古屋大学(愛知県)(招待講演)
    • Year and Date
      2012-03-18
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Development of newdeep ultra-violet light emitter usingmicro-plasma excitation of AlGaN and itsapplication2012

    • Author(s)
      Y. Aoyagi, N. Kurose
    • Organizer
      International Conference onNanotechnology and MEMS
    • Place of Presentation
      静岡大学 (静岡県)
    • Year and Date
      2012-12-01
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] 高効率・高出力縦型深紫外発光素子の開発とその環境、バイオ・計測への応用2011

    • Author(s)
      武内道一, 黒内正仁, 青柳克信
    • Organizer
      京都ナノクラスター生活資源グループ平成22年度第2回グループミーティング
    • Place of Presentation
      JSTイノベーションプラザ京都(京都府)
    • Year and Date
      2011-03-11
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] 2光束成長その場観察技法を用いた縦型深紫外発光素子の高出力化に関する研究2011

    • Author(s)
      武内道、黒内正仁、青柳克信
    • Organizer
      窒化物光半導体のフロンティア-材料潜在能力の極限発現-
    • Place of Presentation
      長浜・滋賀(Invited)
    • Year and Date
      2011-03-01
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] 高パワー深紫外半導体発光デバイスの開発2011

    • Author(s)
      武内道一、青柳克信、渡辺正幸、荒川彰
    • Organizer
      京都ナノクラスター 第二回グループミーティング
    • Place of Presentation
      JSTイノベーションプラザ(京都)(Invited)
    • Year and Date
      2011-03-11
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] 2光束成長その場観察技法を用いた縦型深紫外発光素子の高出力化に関する研究2011

    • Author(s)
      武内道一、黒内正仁、青柳克信
    • Organizer
      窒化物光半導体のフロンティア-材料潜在能力の極限発現-
    • Place of Presentation
      長浜ロイヤルホテル・滋賀(Invited)
    • Year and Date
      2011-03-01
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] 水殺菌、およびオゾン検知へのAlGaN系深紫外LEDの実応用2010

    • Author(s)
      武内道一、吉田薫、黒内正仁、荒木努、名西やすし、青柳克信
    • Organizer
      窒化物ナノ・エレクトロニクス材料研究センター講演会「GaN系プラネットコンシャスデバイス・材料の現状」
    • Place of Presentation
      東北大学(宮城)
    • Year and Date
      2010-11-04
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Formation of three-dimensional AlN structure for initial growth by annealing AlN buffer layer2010

    • Author(s)
      M.Kurouchi, M.Takeuchi, Y.Aoyagi
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN2010)
    • Place of Presentation
      タンパ、フロリダ州
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] 深紫外線LEDを用いたオゾン濃度測定2010

    • Author(s)
      吉田薫、黒内正仁、武内道一、荒木努、名西やすし、菅野裕靖、阿彦由美、中村広隆、青柳克信
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎)
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] 深紫外線LEDを用いたオゾン濃度測2010

    • Author(s)
      吉田薫、黒内正仁、武内道山、荒木努、名西〓之、菅野裕靖、阿彦由美、中村広隆、青柳克信
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] 極性混在AlNバッファ層のアニール処理による新しい核形成法2010

    • Author(s)
      黒内正仁、武内道一、黄恩淑、青柳克信
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎)
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] 深紫外線LEDを用いた水の消毒2010

    • Author(s)
      吉田薫、黒内正仁、安井宣仁、武内道一、荒木努、神子直之、名西やすし、青柳克信
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2010-03-28
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] III族窒化物半導体深紫外光源による水処理2010

    • Author(s)
      武内道一、黒内正人、青柳克信、安井宣仁、神子直之
    • Organizer
      第13回日本水環境学会シンポジウム
    • Place of Presentation
      京都大学(京都府)
    • Year and Date
      2010-09-09
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] 水殺菌、およびオゾン検知へのAlGaN系深紫外LEDの実応用2010

    • Author(s)
      武内道一、吉田薫、黒内正人、荒木努、名西〓之、青柳克信
    • Organizer
      窒化物ナノ・エレクトロニクス材料研究センター講演会GaN系プラネットコンシャスデバイス・材料の現状
    • Place of Presentation
      東北大学(宮城県)
    • Year and Date
      2010-11-04
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] III族窒化物半導体深紫外光源による水処理2010

    • Author(s)
      武内道一、黒内正仁、青柳克信、安井宣仁、神子直之
    • Organizer
      第13回日本水環境学会シンポジウム
    • Place of Presentation
      京都大学(京都)(Invited)
    • Year and Date
      2010-09-09
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Development of DUV Light Emitter by Nonlinear PhotonicCrystal and AlGaN Semiconductors2010

    • Author(s)
      Y.Aoyagi
    • Organizer
      Int.Conf.Lasar lion (2010)
    • Place of Presentation
      Munich, Germany
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] 深紫外線LEDを用いた水の消毒2010

    • Author(s)
      吉田薫、黒内正仁、安井宣仁、武内道一、荒木努、神子直之、名西やすし、青柳克信
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Growth and Application of AlGaN Deep UV LEDs -Water Purification and Ozone Sensing2010

    • Author(s)
      M.Takeuchi, K.Yoshida, M.Kurouchi, T.Araki, Y.Nanishi, Y.Aoyagi
    • Organizer
      The 6th SNU-Ritsumeikan University Joint Workshop
    • Place of Presentation
      Soeul, Korea
    • Year and Date
      2010-11-10
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] 極性混在AlNバッファ層のアニール処理による新しい核形成法2010

    • Author(s)
      黒内正人、武内道一、青柳克信
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Formation of Three-dimensional AlN Structure for Initial Growth by Annealing AlN Buffer Love2010

    • Author(s)
      Masahiro Kurouchi, Misaichi Takeuchi, Yoshinobu Aoyagi
    • Organizer
      The International Workshop on Nitride Semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida, USA
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Crack-free AlGaN/AlN Templates Grown on Si(111) Substrates by In-situ Void Formation Technique2010

    • Author(s)
      Misaichi Takeuchi, Yoshinobu Aoyagi
    • Organizer
      The International Workshop on Nitride Semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida, USA
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] AlNボイド形成法によるSi基板上へのクラックフリーAlGaN層成長2010

    • Author(s)
      武内道一、林洋平、荒木努、名西やすし、青柳克信
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2010-03-29
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Growth and Application of AlGaN Deep UV LEDs-Water Purification and Ozone Sensing-2010

    • Author(s)
      M.Takeuchi, K.Yoshida, M.Kurouchi, T.Araki, Y.Nanishi, Y.Aoyagi
    • Organizer
      The 6th SNU-Ritsumeikan University Joint Workshop
    • Place of Presentation
      ソウル、韓国(Invited)
    • Year and Date
      2010-11-10
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Water Sterilization by AlGaN base DUV Light Emitting Diodes2010

    • Author(s)
      K.Yoshida, M, Kurouchi, M.Takeuchi, N.Yasui, N.Kamiko, Y.Nanishi, T.Araki, Y, Aoyagi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺(静岡)
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Crack-free AlGaN/AlN templates grown on Si(III) substrates by in-situ void formation technique2010

    • Author(s)
      M.Takeuchi, Y.Aoyagi
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN2010)
    • Place of Presentation
      タンパ、フロリダ州
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Field Plate構造を適用したAlGaN chamel HEMTの特性2010

    • Author(s)
      南條拓真、武内道一、今井章文、鈴木洋介、塩沢勝臣、吹田宗義、阿部雄次、柳生栄治、吉新喜市、青柳克信
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎)
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] AlNボイド形成法によるSi基板上へのクラックフリーAlGaN層成長2010

    • Author(s)
      武内道一、林洋平、荒木努、名西やすし、青柳克信
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Investigation of AlN MOCVD Growth by Two-light-Beam in-situ Monitoring System2009

    • Author(s)
      武内道一, 青柳克信
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Drivability Enhancement of AlGaN Channel HEMTs2009

    • Author(s)
      T.Nanjo, M.Takeuchi, A.Imai, M.Suita, T.Oishi, Y.Abe, E.Yagyu, T.Kurata, Y.Tokuda, Y.Aoyagi
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-23
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] 超格子はく離層を用いたAlGaN系レーザリフトオフ法によるダメージの評価2009

    • Author(s)
      高橋聡、武内道一、荒木努、名西やすし、青柳克信
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山)
    • Year and Date
      2009-09-11
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] AlN~AlGaN MOCVD成長その場観察-縦型深紫外発光素子実現にむけて-2009

    • Author(s)
      武内道一、青柳克信
    • Organizer
      日本結晶成長学会ナノエピ分科会 第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大(東京)
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] AlN MOCVD成長の二光東成長その場観察2009

    • Author(s)
      武内道一、青柳克信
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山)
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Designing of multiple quantum well structures to increase emission intensity from AlGaN LEDs2009

    • Author(s)
      M.Kurouchi, Y.Hayashi, M.Takeuchi, T.Araki, Y.Nanishi, Y.Aoyagi
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀)
    • Year and Date
      2009-07-10
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] 高出力深紫外縦型半導体発光素子の開発と水浄化への応用2009

    • Author(s)
      武内道一、青柳克信
    • Organizer
      第12回日本水環境学会シンポジウム
    • Place of Presentation
      お茶の水女子大(東京)
    • Year and Date
      2009-09-14
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] AlGaN量子井戸構造に対するIII族元素を用いたポストアニール効果2009

    • Author(s)
      吉田薫、武内道一、荒木努、名西やすし、青柳克信
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] Discussion about the growth model of AlN flow-modulation MOCVD2009

    • Author(s)
      武内道一, 青柳克信
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀)
    • Year and Date
      2009-07-10
    • Data Source
      KAKENHI-PUBLICLY-21016007
  • [Presentation] 深紫外発光素子の開発(招待講演)2007

    • Author(s)
      青柳 克信
    • Organizer
      電子情報通信学会2007年総合大会
    • Place of Presentation
      名古屋
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Presentation] Improvement in emission intensity of A1GaN deep ultraviolet light-emitting diodes by carrier confinement enhancement in thin quantum well2007

    • Author(s)
      青柳 克信,
    • Organizer
      第26回電子材料シンポジウム(EMS-26)
    • Place of Presentation
      滋賀県守山
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Presentation] Development of Deep UV LED(invited talk)2007

    • Author(s)
      Y. Aoyagi
    • Organizer
      Society of electro-information
    • Place of Presentation
      Nagoya
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Presentation] Photonic Crystal and III-N Quantum Dot Laser, (invited talk)2005

    • Author(s)
      Y. Aoyagi
    • Organizer
      CLEO 2005(The Conference on Lasers and Electro-Optics 2005)
    • Place of Presentation
      Baltimore, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Presentation] Photonic Crystal and III-N Quantum Dot Laser(Invited Talk)2005

    • Author(s)
      Y.Aoyagi
    • Organizer
      CLEO 2005(The Conference on Lasers and Electro-Optics 2005)
    • Place of Presentation
      Baltimore,USA
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207
  • [Presentation] 高出力大面積マイクロプラズマ励起AlGaN 深紫外発光素子の開発

    • Author(s)
      黒瀬範子、青柳克信
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      松山大学(愛媛県)
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Large area micro-plasma exited AlGaN deep ultravioket light emitter

    • Author(s)
      N. Kurose, Y. Aoyagi
    • Organizer
      International Display Workshop
    • Place of Presentation
      京都国際会議場(京都府)
    • Invited
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Development of large area micro-plasma-excited AlGaN deep ultraviolet light device (MIPE) for disinfection of water

    • Author(s)
      N. Kurose, Y. Aoyagi
    • Organizer
      Water Contamination Emergency Conference 5
    • Place of Presentation
      Mulheim an der Ruhr (Germany)
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Development of new deep UV light emitter using micro-plasma and application of deep UV light

    • Author(s)
      Y. Aoyagi, N. Kurose
    • Organizer
      ISMS2012
    • Place of Presentation
      静岡大学(静岡県)
    • Invited
    • Data Source
      KAKENHI-PROJECT-22246051
  • [Presentation] Deep UV Light Emitter by Nonlinear Photonic Crystal and AlGaN Semiconductors

    • Author(s)
      N. Kurose, Y. Aoyagi
    • Organizer
      Laserion 2013,
    • Place of Presentation
      Munich, Germany
    • Invited
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] Development of substrate-removal-free vertical deep ultraviolet light emitting diode using AlGaN semiconductors on Si(111) substrate (Ref-V-DUVLED)

    • Author(s)
      N. Kurose, Y. Aoyagi, K. Shibano, T. Araki, Y. Aoyagi
    • Organizer
      Material Research Society
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] n-Si基板上縦型深紫外LED (Ref-V DUV LED)の開発(2)

    • Author(s)
      柴野謙太朗、黒瀬範子、荒木努、青柳克信
    • Organizer
      第61回応用物理学会春期学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス、神奈川
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] マイクロプラズマ励起深紫外発光素子(MIPE)の開発と応用

    • Author(s)
      黒瀬範子、青柳克信
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学、京都
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] Si上縦型深紫外LEDの開発と応用

    • Author(s)
      柴野謙太朗、黒瀬範子、荒木努、青柳克信
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学、京都
    • Data Source
      KAKENHI-PROJECT-25249053
  • [Presentation] Two inch large area DUV AlGaN light emitter using micro-plasma excitation

    • Author(s)
      N. Kurose, Y. Aoyagi
    • Organizer
      Iinternational Workshop on Nitride Semiconductors
    • Place of Presentation
      札幌コンベンションセンター(北海道)
    • Data Source
      KAKENHI-PROJECT-22246051
  • 1.  IWAI Sohachi (40087474)
    # of Collaborated Projects: 10 results
    # of Collaborated Products: 1 results
  • 2.  KAWASAKI Koji (10234056)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 4 results
  • 3.  MEGURO Takashi (20182149)
    # of Collaborated Projects: 7 results
    # of Collaborated Products: 0 results
  • 4.  KAWABE Mitsuo (80029446)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 5.  ISSHIKI Hideo (60260212)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 6.  HIRAYAMA Hideki (70270593)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 21 results
  • 7.  ARAKI Tsutomu (20312126)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 8 results
  • 8.  TAKEUCHI Misaichi (60284585)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 42 results
  • 9.  KUROSE Noriko (50520540)
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  • 60.  尾笹 一成 (10231234)
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  • 63.  梅野 正義 (90023077)
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  • 80.  石橋 晃
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    # of Collaborated Products: 0 results
  • 81.  望月 康則
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