MIZUTANI Takashi 水谷孝

Researcher Number	70273290
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2010 – 2012: 名古屋大学, 工学研究科, 教授 2010 – 2011: Nagoya University, 工学(系)研究科(研究院), 教授 2007 – 2011: Nagoya University, 大学院・工学研究科, 教授 2007 – 2009: 名大, 工学(系)研究科(研究院), 教授 2006: 名古屋大学, 大学院工学研究科, 教授 … More 2004 – 2005: 名古屋大学, 大学院・工学研究科, 教授 1998 – 2005: 名古屋大学, 工学研究科, 教授 2001: Nagoya University, School of Engi-neering, Professor, 工学研究科, 助教授 1997: 名古屋大学, 大学院・工学研究科, 教授 1996: 名古屋大学, 工学部, 教授 Less
Review Section/Research Field	Principal Investigator 電子デバイス・機器工学 / Electron device/Electronic equipment / Science and Engineering Except Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 / Biofunction/Bioprocess / Microdevices/Nanodevices
Keywords	Principal Investigator GaN HEMT / KFM / Si_3N_4 / GaN MISHEMT / カーボンナノチューブ / GaAs MESFET / 電位分布 / MISHEMT / gate leakage current / ゲートリーク電流 … More / 電流コラプス / InGaAs HEMT / 電流DLTS / フッ素プラズマ処理 / HfO_2 / ノーマリオフ / InGaN cap / GaN / pn接合 / ケルビンプローブフォース顕微鏡 / 単安定-双安定転移 / inclined gate recess / current DLTS / breakdown voltage / 電位測定 / 高誘電率膜 / GaN MISHEM / 深い準位 / DLTS / MBE / ノーマリオフ型 / 傾斜リセス構造 / 電子速度 / 傾斜リセス / ZrO_2 / 耐圧 / T-shaped gate / miro-Raman / temperature distribution / current collapse / 高温動作 / 電界集中 / EL発光 / 低周波雑音 / 実効電子速度 / 電流しゃ断周波数 / 電子ビーム描画 / 顕微ラマン / 温度上昇 / Si_3N_4保護膜 / InAs Dot / Potential Profile / Kelvin Probe Force Microscopy / サファイア基板 / 単電子トンネル / AFM酸化 / InAsドット / 薄層GaN / AlGaN/GaN / 高出力 / gate firstプロセス / 硫化アンモニウム処理 / Al_2O_3, InGaN cap / MISFET / 国際会議開催 / 活動計画 / キックオフ会議 / ナノチューブ / 連携 / 研究会 / ニュースレター / 全体会議 / 班会議 / 国際会議 / 成果発表 / 総括班会議 / 総括班 / 成果報告会 / 連携研究 / 理論 / 評価 / 成長 / デバイス / 誘電遮蔽 / 発効エネルギー / ヒステリシス / 損傷 / Hf02 / 原子層堆積 / 表面パシベーション / トランジスタ / カリラリティ分布 / PL発光分布 / 光吸収断面積 / SGM / 輸送現象 / 表面保護膜 / 光電子複合デバイス / 優先成長 / 電子/正孔同時注入 / 発光効率 / 欠陥 / 走査型局所ゲート顕微鏡 / CNTFET / CNT-CNT間の接合抵抗 / Auコンタクト / グラフェンコンタクト / 光照射電流 / 開放電圧 / 光電子複合素子 / 環境効果 / 走査型プローブ顕微鏡 / 電界注入 / TFT / FET / 光デバイス / CNT / しきい値電圧シフト / ひずみ電界 / HEMT / 高耐圧 / MOSFET / Mgドーピング / ひずみ分極 / HEMT、ノーマリオフ、MOSFET / 遠心分離 / 正孔 / 電界効果トランジスタ / デバイスシミュレーション / InGaAs / InAlAs / AlGaAs / GaAs / 光論理素子 / 共鳴トンネルトランジスタ / 電子温度 / 量子閉込めシュタルク効果 / 電荷蓄積効果 / フォトルミネセンス / 顕微分光 / 変位電流 / 共鳴トンネル論理デバイス … More Except Principal Investigator InP / InGaAs / HEMT / InAlAs / resonant tunneling / 集積回路 / 共鳴トンネル / D converter / A / logic gate / integrated circuit / ADコンバータ / 論理ゲート / bifurcation / frequency divider / MMIG / chaos / 分岐 / 分周器 / MMIC / カオス / 細胞 / 遺伝子発現解析 / PCR / 1細胞解析 / 磁性粒子 / 磁性搬送 / 液滴 / 一細胞解析 / バイオセンサ / バイオセンサー / 量子効果デバイス / ナノデバイス / カーボンナノチューブ / 一般化運動量 / 一般化座標 / 量子力学 / トンネル Less

Fabrication of normally-off GaN MISFETs for high-power applicationPrincipal Investigator
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
MAGNETIC FORCE-BASED-DROPLET-HANDLING SYSTEM FOR SINGLE CELL DIGITAL PCR ANALYSIS
- Principal Investigator
  
  OKOCHI Mina
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Biofunction/Bioprocess
- Research Institution
  Nagoya University
Study on carbon nanotube optoelectronics devicesPrincipal Investigator
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Carbon nanotube nanoelectronicsPrincipal Investigator
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2007 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Carbon nanotube nanoelectronicsArea Organizer
- Area Organizer
  
  MIZUTANI Takashi
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
Fabrication and characterization of normally-off GaN HEMTsPrincipal Investigator
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
カーボンナノチューブのナノデバイスへの応用-合成からデバイスへ
- Principal Investigator
  
  MATSUMOTO Kazuhiko
- Project Period (FY)
  2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Osaka University
極微細素子を用いた一般化座標上のトンネル現象の研究
- Principal Investigator
  
  MAEZAWA Koichi
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTsPrincipal Investigator
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
Ultrahigh frequency integrated circuits using resonant tunneling diodes
- Principal Investigator
  
  MAEZAWA Koichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
Fabrication and Characterization of GaN HEMTs with short gate lengthPrincipal Investigator
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya University
カーボンナノチューブを用いたトランジスタの製作・評価に関する研究Principal Investigator
- Principal Investigator
  
  水谷孝
- Project Period (FY)
  2000
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya University
Study of ultrahigh-frequency signal generation and processing using resonant tunneling chaos devices
- Principal Investigator
  
  MAEZAWA Koichi
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  NAGOYA UNIVERSITY
走査型プローブ顕微鏡を用いた単電子素子の製作および単電子トンネルの制御・検出Principal Investigator
- Principal Investigator
  
  水谷孝
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Nagoya University
Potential Profile Measurement of Semiconductor Devices Using Kelvin Probe Force MicroscopyPrincipal Investigator
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya University
共鳴トンネル現象を利用した電子・光融合デバイスの研究Principal Investigator
- Principal Investigator
  
  水谷孝
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya University
量子井戸構造を用いた共鳴トンネル論理デバイスの応答速度の研究Principal Investigator
- Principal Investigator
  
  水谷孝
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University

All 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003

All Journal Article Presentation Patent

[Journal Article] Estimation of Height of Barrier Formed in Metallic Carbon Nanotube2012
- Author(s)
  Y. Okigawa, Y. Ohno, S. Kishimoto, and T. Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 2S Pages: 1-4
- DOI
  10.1143/jjap.51.02bn01
- NAID
  210000140296
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Observation of N-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum2012
- Author(s)
  H. Imaeda, S. Ishii, S. Kishimoto, Y. Ohno and T. Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 2S Pages: 1-4
- DOI
  10.1143/jjap.51.02bn06
- NAID
  210000140301
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition2011
- Author(s)
  S.Ishii, Y.Ohno, S.Kishimoto, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  40017446841
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Comparative study of AlGaN/GaN metal. oxide. semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide2011
- Author(s)
  Kishimoto, M. Kitamura
- Journal Title
  
  Solid State Electron
  
  Volume: 62 Issue: 1 Pages: 152-155
- DOI
  10.1016/j.sse.2011.04.017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] Impact of fixed charges at interfaces on the operation of top-gate carbon nanotube field-effect transistors2011
- Author(s)
  Y.Ohno, N.Moriyama, S.Kishimoto, T.Mizutani
- Journal Title
  
  phys.stat.sol
  
  Volume: (c)8 Pages: 567-569
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Electrical properties of carbon nanotube thin-film transistors fabricated using plasma-enhanced chemical vapor deposition measured by scanning probe microscopy2011
- Author(s)
  Y. Okigawa, S. Kishimoto, Y. Ohno, and T. Mizutani
- Journal Title
  
  Nanotechnol
  
  Volume: 22 Issue: 19 Pages: 195202-195202
- DOI
  10.1088/0957-4484/22/19/195202
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Improvement in alignment of single-walled carbon nanotubes grown on quartz substrate2011
- Author(s)
  K.Hata, Y.Ohno, S.Kishimoto, T.Mizutani
- Journal Title
  
  phys.stat.sol
  
  Volume: (c)8 Pages: 561-563
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Air-Free Fabrication and Investigation of Effect of Air Exposure on Carbon Nanotube Field-Effect Transistors2011
- Author(s)
  S.Ishii, S.Kishimoto, Y.Ohno, T.Mizutani
- Journal Title
  
  Materials Express 1
  
  Pages: 285-290
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] カーボンナノチューブナノエレクトロニクス2010
- Author(s)
  水谷孝
- Journal Title
  
  未来材料
  
  Volume: 10巻 Pages: 56-60
- Data Source
  KAKENHI-ORGANIZER-19054009
[Journal Article] Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors2010
- Author(s)
  Y. Nakashima, Y. Ohno, S. Kishimoto, M. Okochi, H. Honda, T. Mizutani
- Journal Title
  
  J. Nanosci. Nanotechnol 10
  
  Pages: 3805-3809
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO_2 gate insulator2010
- Author(s)
  S.Sugiura, Y.Hayashi, S.Kishimoto, T.Mizutani, et al.
- Journal Title
  
  Solid-State Electronics
  
  Volume: 54 Pages: 79-83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] Analysis of transient be havior of AlGaN/GaN MOSHFET2010
- Author(s)
  Y. Hayashi, S. Kishimoto, and T. Mizutani
- Journal Title
  
  Solid State Electron
  
  Volume: 54 Issue: 11 Pages: 1451-1456
- DOI
  10.1016/j.sse.2010.07.001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy2010
- Author(s)
  Y.Okigawa, S.Kishimoto, Y.Ohno, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49, No.2
- NAID
  210000067973
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator2010
- Author(s)
  S. Sugiura, Y. Hayashi, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
- Journal Title
  
  Solid State Electron
  
  Volume: 54 Issue: 1 Pages: 79-83
- DOI
  10.1016/j.sse.2009.10.007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] リサーチ・ナビ【文部科学省科学研究費補助金:特定領域研究】カーボンナノチューブナノエレクトロニクス2010
- Author(s)
  水谷孝
- Journal Title
  
  未来材料
  
  Volume: 12 Pages: 56-60
- NAID
  40017397053
- Data Source
  KAKENHI-ORGANIZER-19054009
[Journal Article] AIGaN/GaN MOSHFETs with HfO2 gate oxide : A simulation study2010
- Author(s)
  Y.Hayashi, S.Sugiura, S.Kishimoto, T.Mizutani
- Journal Title
  
  Solid State Electron.
  
  Volume: 54 Pages: 1367-1371
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors2010
- Author(s)
  Y.Nakashima, Y.Ohno, S.Kishimoto, M.Okochi, H.Honda, T.Mizutani
- Journal Title
  
  J.of Nanosci.and Nanotechnol.
  
  Volume: 10 Pages: 3805-3809
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] AlGaN/GaN MOSHFETs with HfO_2 gate oxide : A simulation study2010
- Author(s)
  Y. Hayashi, S. Sugiura, S. Kishimoto, and T. Mizutani
- Journal Title
  
  Solid State Electron
  
  Volume: 54 Issue: 11 Pages: 1367-1371
- DOI
  10.1016/j.sse.2010.03.022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] Carbon Nanotubes for VLSI: Interconnect and Transistor Applications2010
- Author(s)
  Y.Awano, S.Sato, M.Nihei, T.Sakai, Y.Ohno, T.Mizutani
- Journal Title
  
  Proc.IEEE
  
  Volume: 98 Pages: 2015-2031
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Thin film transistors using PECVD-grown carbon nanotubes2010
- Author(s)
  Y.Ono, S.Kishimoto, Y.Ohno, T.Mizutani
- Journal Title
  
  Nanotechnol.
  
  Volume: 21
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide -Semiconductor Inverters Realized by Controlling Interface Charges2010
- Author(s)
  N.Moriyama, Y.Ohno, K.Suzuki, S.Kishimoto, T.Mizutani
- Journal Title
  
  Appl.Phys.Exp.
  
  Volume: 3
- NAID
  10027441471
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Thin film transistors using PECVD-grown carbon nanotubes2010
- Author(s)
  Y. Ono, S. Kishimoto, Y. Ohno, and T. Mizutani
- Journal Title
  
  Nanotechnol
  
  Volume: 21 Issue: 20 Pages: 205202-205202
- DOI
  10.1088/0957-4484/21/20/205202
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors2010
- Author(s)
  T. Mizutani, Y. Okigawa, Y. Ono, S. Kishimoto, and Y. Ohno
- Journal Title
  
  Appl Phys. Exp.
  
  Volume: 3 Issue: 11 Pages: 115101-115101
- DOI
  10.1143/apex.3.115101
- NAID
  10027442095
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy2010
- Author(s)
  Y. Okigawa, S. Kishimoto, Y. Ohno, T. Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.49,No.2
- NAID
  210000067973
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors2010
- Author(s)
  Y.Nakashima, Y.Ohno, S.Kishimoto, M.Okochi, H.Honda, T.Mizutani
- Journal Title
  
  J.Nanosci.Nanotechnol.
  
  Volume: 10 Pages: 3805-3809
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Fabrication process of carbon nanotube field effect transistors using atomic layer deposition passivation for biosensors.2010
- Author(s)
  Nakashima Y., Ohno Y., Kishimoto S.Okochi M., Honda H., Mizutani T.
- Journal Title
  
  J.Nanosci.Nanotechnol. 10
  
  Pages: 3805-3809
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360371
[Journal Article] Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors2010
- Author(s)
  T.Mizutani, Y.Okigawa, Y.Ono, S.Kishimoto, Y.Ohno
- Journal Title
  
  Appl.Phys.Exp.
  
  Volume: 3
- NAID
  10027442095
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Analysis of transient behavior of AlGaN/GaN MOSHFET2010
- Author(s)
  Y.Hayashi, S.Kishimoto, T.Mizutani
- Journal Title
  
  Solid State Electron.
  
  Volume: 54 Pages: 1451-1456
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition2009
- Author(s)
  T. Mizutani, H. Ohnaka, Y. Okigawa, S. Kishimoto,Y. Ohno
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 106 Issue: 7
- DOI
  10.1063/1.3234389
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Conductance of individual channels in a carbon nanotube field-effect transistor studied by magnetic force microscopy2009
- Author(s)
  M. Ato, T. Takahashi, Y. Okigawa, T. Mizutani
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 106
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition2009
- Author(s)
  T.Mizutani, H.Ohnaka, Y.Okigawa, S.Kishimoto, Y.Ohno
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 106
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition2009
- Author(s)
  T. Mizutani, H. Ohnaka, Y. Okigawa, S. Kishimoto, Y. Ohno
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 106
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Conductance of individual channels in a carbon nanotube field-effect transistor studied by magnetic force microscopy2009
- Author(s)
  M.Ato, T.Takahashi, Y.Okigawa, T.Mizutani
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 106
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Potential Profile Measurement of Carbon Nanotube FETs Based on the Electrostatic Force Detection2008
- Author(s)
  Y. Okigawa, T. Umesaka, Y. Ohno, S. Kishimoto, T. Mizutani
- Journal Title
  
  NANO: Brief Reports and Reviews 3
  
  Pages: 51-54
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide2008
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, et. al
- Journal Title
  
  IEICE Trans. Electron. E91-C
  
  Pages: 1001-1003
- NAID
  10026818401
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer2008
- Author(s)
  M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 1929-1931
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer2008
- Author(s)
  M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
- Journal Title
  
  IEICE Trans. Electron. E91-C
  
  Pages: 989-993
- NAID
  10026818374
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer2008
- Author(s)
  M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
- Journal Title
  
  phys. stat. sol. (c) Vol.5, No.6
  
  Pages: 1929-1931
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Normally-off AlGaN/GaN MOSHFETs with HfO_2 gate oxide2008
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, et al
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 1923-1925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Evaluation of deep levels in GaN grown by RF-MBE on GaN template by capacitance DLTS2008
- Author(s)
  T. Mitsunaga, M. Kurouchi, S. Kishimoto, T. Mizutani, et. al
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 3032-3034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] High-density horizontally aligned growth of carbon nanotubes with Conanoparticles deposited by arc-discharge plasma method2008
- Author(s)
  D. Phokharatkul, Y. Ohno, H. Nakano, S. Kishimoto, T. Mizutani
- Journal Title
  
  Appl. Phys. Lett. 93
  
  Pages: 53112-53112
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Normally-off AlGaN/GaN MOSHFETs with HfO_2 gate oxide2008
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
- Journal Title
  
  phys. stat. sol.(c) Vol.5, No.6
  
  Pages: 1923-1925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Fabrication of vertically-aligned carbon nanotube electrodes using grid-inserted plasma-enhanced chemical vapor deposition for chemical sensors.2008
- Author(s)
  Kojima, Y. Kishimoto S., Okochi M., Honda H., Mizutani T.
- Journal Title
  
  Jpn J.Appl.Phys. 47
  
  Pages: 2028-2031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360371
[Journal Article] Electrical properties of carbon nanotube FETs [invited paper]2008
- Author(s)
  T. Mizutani, Y. Ohno, S. Kishimoto
- Journal Title
  
  Proc. SPIE 7037
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Electrical properties of carbon nanotube FETs2008
- Author(s)
  T. Mizutani, Y. Nosho, Y. Ohno
- Journal Title
  
  Journal of Physics Conference Series
  
  Volume: 109 Pages: 012002-012002
- DOI
  10.1088/1742-6596/109/1/012002
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Electrical properties of carbon nanotube FETs [invited paper]2008
- Author(s)
  T. Mizutani, Y. Nosho, Y. Ohno
- Journal Title
  
  Journal of Physics : Conference Series 109
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Excitonic transition energies in single-walled carbon nanotubes: Dependence on environmental dielectric constant2007
- Author(s)
  Y. Ohno, S. Iwasaki, Y. Murakami, S. Kishimoto, S. Maruyama, T. Mizutani
- Journal Title
  
  phys. stat. sol.
  
  Volume: (b)244 Issue: 11 Pages: 4002-4005
- DOI
  10.1002/pssb.200776124
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO_2 as gate oxide2007
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
- Journal Title
  
  Electronics Letters Vol. 43, No. 17
  
  Pages: 952-953
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Drain current DLTS of normally-off AlGaN/GaN HEMTs2007
- Author(s)
  T.Mizutani, A.Kawano, S.Kishimoto, K.Maeazawa
- Journal Title
  
  phys. stat. sol. (c) (印刷中)
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] AlGaN/GaN MIS-HEMTs with HfO2 Gate Insulator2007
- Author(s)
  A. Kawano, S. Kishimoto, Y. Ohno, K. Maezawa, T. Mizutani, H. Ueno, T. Ueda, T. Tanaka
- Journal Title
  
  phys. stat. sol.(c) 4
  
  Pages: 2700-2703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide2007
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, et. al.
- Journal Title
  
  Electronics Letters 43
  
  Pages: 952-953
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] AIGaN/GaN HEMTs with Thin InGaN Cap Layer for Normally Off Operation2007
- Author(s)
  T. Mizutani, M. Ito, S. Kishimoto, F. Nakamura
- Journal Title
  
  IEEE Electron Device Letters 28
  
  Pages: 549-551
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Excitonic transition energies in single-walled carbon nanotubes: Depend ence on environmental dielectric constant2007
- Author(s)
  Y. Ohno, S. Iwasaki, Y. Murakami, S. Kishimoto, S. Maruyama, T. Mizutani
- Journal Title
  
  phys. stat. sol. (b) 244
  
  Pages: 4002-4005
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] The effects of chemical doping with F4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique2007
- Author(s)
  Y. Nosho, Y. Ohno, S. Kishimoto, T. Mizutani
- Journal Title
  
  Nanotechnology
  
  Volume: 18 Issue: 41 Pages: 415202-415202
- DOI
  10.1088/0957-4484/18/41/415202
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] AlGaN/GaN HEMTs with Thin InGaN Cap Layer for Normally Off Operation2007
- Author(s)
  T. Mizutani, M. Ito, S. Kishimoto, F. Nakamura
- Journal Title
  
  IEEE Electron Device Letters Vol. 28, No. 7
  
  Pages: 549-551
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Enhanced 1,520 nm Photoluminescence from Er_3+Ions in Di-erbium-carbide Metallofullerenes (Er_2C_2)@C_<82> (Isomers I, II, III)2007
- Author(s)
  Y. Ito, T. Okazaki, S. Okubo, M. Akachi, Y. Ohno, T. Mizutani,
- Journal Title
  
  ACS Nano 1
  
  Pages: 456-462
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Resonant tunneling delta sigma modulator suitable for high-speed operation2006
- Author(s)
  K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani
- Journal Title
  
  Electron.Lett. Vol.42, No.2
  
  Pages: 77-78
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] A1GaN/GaN HEMTs with inclined-gate-recess structure2006
- Author(s)
  Y.Aoi, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.45,Part 1,No.4B
  
  Pages: 3368-3371
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Resonant tunneling delta sigma modulator suitable for high-speed operation2006
- Author(s)
  K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani
- Journal Title
  
  Electronics Lett. 42
  
  Pages: 77-78
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band A/D Converters2006
- Author(s)
  K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani, H.Matsuzaki
- Journal Title
  
  Jpn.J.Appl.Phys 46(印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] AlGaN/GaN HEMTs with inclined-gate-recess structure2006
- Author(s)
  Y.Aoi, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.45 (to be published)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] AlGaN/GaN HEMTs with inclined-gate-recess structure2006
- Author(s)
  Y.Aoi, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.45(to be published)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band A/D Converters2006
- Author(s)
  K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani, H.Matsuzaki
- Journal Title
  
  Jpn.J.Appl.Phys. (accepted for publication
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band A/D Converters2006
- Author(s)
  K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani, H.Matsuzaki
- Journal Title
  
  Jpn.J.Appl.Phys. 46(掲載予定)
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Resonant tunneling delta sigma modulator suitable for high-speed operation2006
- Author(s)
  K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani
- Journal Title
  
  Electron.Lett. 42
  
  Pages: 77-78
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Deep levels in n-type AlGaN grown by hydride vapour phase epitaxy on sapphire characterized by deep level transient spectroscopy2005
- Author(s)
  J.Osaka, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Appl.Phys.Lett. Vol.87
  
  Pages: 222112-222112
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Controlling high-frequency chaos in resonant tunneling chaos generator circuits2005
- Author(s)
  K.Maezawa, Y.Komoto, S.Kishimoto, T.Mizutani, M.Takakusaki, H.Nakata
- Journal Title
  
  IEICE ELEX Vol.2 No.12(June 25, 2005)
  
  Pages: 368-372
- NAID
  130000088148
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs2005
- Author(s)
  K.Maezawa, T.Iwase, Y.Ohno, S.Kishimoto, T.Mizutani, K.Sano, M.Takakusaki, H.Nakata
- Journal Title
  
  Jpn.J.Appl.Phys. 45
  
  Pages: 4790-4794
- NAID
  10016608254
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs2005
- Author(s)
  K.Maezawa, T.Iwase, Y.Ohno, S.Kishimoto, T.Mizutani, M.Takakusaki, H.Nakata
- Journal Title
  
  Jpn.J.Appl.Phys. 45
  
  Pages: 4790-4794
- NAID
  10016608254
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Controlling high-frequency chaos in resonant tunneling chaos generator circuits2005
- Author(s)
  K.Maezawa, Y.Komoto, S.Kishimoto, T.Mizutani, M.Takakusaki, H.Nakata
- Journal Title
  
  IEICE ELEX 2
  
  Pages: 368-372
- NAID
  130000088148
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs2005
- Author(s)
  K.Maezawa, T.Iwase, Y.Ohno, S.Kishimoto, T.Mizutani, K.Sano, M.Takakusaki, H.Nakata
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.45
  
  Pages: 4790-4794
- NAID
  10016608254
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] AlGaN/GaN MIS-HEMTs with ZrO2 Gate Insulator2004
- Author(s)
  T.Sugimoto, Y.Ohno, S.Kishimoto, K.Maezawa, J.Osaka, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184:Section 4
  
  Pages: 279-282
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors2004
- Author(s)
  Y.Ohno, T.Nakao, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Applied Physics Letters Vol.84, No.12
  
  Pages: 2184-2186
- NAID
  120000979681
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] 窒化物半導体電子デバイスにおけるおける輸送特性2004
- Author(s)
  水谷孝
- Journal Title
  
  応用物理学会誌 Vol.73, No.3
  
  Pages: 327-332
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Drain Current DLTS of AlGaN-GaN MIS-HEMTs2004
- Author(s)
  T.Okino, M.Ochiai, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  IEEE EDL vol.25, No.8
  
  Pages: 523-525
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy2004
- Author(s)
  K.Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Applied Physics Letters Vol.85,No.24
  
  Pages: 6028-6029
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors2004
- Author(s)
  Y.Ohno, T.Nakao, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Appl.Phys.Lett. Vol.84, No.12
  
  Pages: 2184-2186
- NAID
  120000979681
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Drain Current DLTS of AIGaN/GaN MIS-HEMTs2004
- Author(s)
  T.Okino, M.Ochiai, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  IEEE EDL Vol.51, No.8
  
  Pages: 523-525
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS2004
- Author(s)
  T.Okino, Y.Ohno, S.Kishimoto, K.Maezawa, J.Osaka, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184:Section 4
  
  Pages: 271-274
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator2004
- Author(s)
  K.Maezawa, Y.Kawano, Y.Ohno, S.Kishimoto, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 5235-5238
- NAID
  10013469796
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Drain Current DLTS of AlGaN/GaN MIS-HEMTs2004
- Author(s)
  Y.Ohno, T.Nakao, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  IEEE EDL Vol.51,No.8
  
  Pages: 523-525
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] AlGaN/GaN MIS-HEMTs with ZrO2 Gate Insulator2004
- Author(s)
  T.Sugimoto, Y.Ohno, S.Kishimoto, K.Maezawa, J.Osaka, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184
  
  Pages: 279-282
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator2004
- Author(s)
  K.Maezawa, Y.Kawano, Y.Ohno, S.Kishimoto, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43
  
  Pages: 5235-5238
- NAID
  10013469796
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS2004
- Author(s)
  T.Okino, Y.Ohno, S.Kishimoto, K.Maezawa, J.Osaka, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184
  
  Pages: 271-274
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy2004
- Author(s)
  K.Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Applied Physics Letters Vol.85, No.24
  
  Pages: 6028-6029
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors2004
- Author(s)
  Y.Ohno, T.Nakao, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Applied Physics Letters Vol.84,No.12
  
  Pages: 2184-2186
- NAID
  120000979681
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy2004
- Author(s)
  Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184 : Section 4
  
  Pages: 275-278
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy2004
- Author(s)
  K.Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184:Section 4
  
  Pages: 275-278
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy2004
- Author(s)
  K.Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Appl.Phys.Lett. Vol.85, No.24
  
  Pages: 6028-6029
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Experimental Demonstration of a Resonant Tunneling Delta-Sigma Modulator for High-Speed, High-Resolution Analog-to-Digital Converter2003
- Author(s)
  Y.Yokoyama, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No.174
  
  Pages: 243-246
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors2003
- Author(s)
  T.Mizutani, H.Makihara, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, Part 1, No.2A
  
  Pages: 424-425
- NAID
  10010796112
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN2003
- Author(s)
  K.Kumada, T.Murata, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani, N.Sawaki
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part 1,No.4B
  
  Pages: 2250-2253
- NAID
  10010801569
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Drain current DLTS of AlGaN/GaN HEMTs2003
- Author(s)
  T.Mizutani, T.Okino, K.Kawada, Y.Ohno, S.Kishimoto, K.Maezawa
- Journal Title
  
  phys.stat.sol.(a) Vol.200,No.1
  
  Pages: 195-198
- NAID
  10011865028
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Measurement of surface contact potential of AlGaN/GaN heterostructure and n-GaN by Kelvin probe force microscopy2003
- Author(s)
  T.Xie, S.Kishimoto, T.Mizutani
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2372-2375
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Experimental demonstration of capacitor-coupled resonant tunneling logic gates for ultra-short gate-delay operation2003
- Author(s)
  T.Tanaka, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42
  
  Pages: 6766-6771
- NAID
  10012563634
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Study of Gate-Bias-Induced Current Collapse in AlGaN/GaN HEMTs2003
- Author(s)
  T.Mizutani, Y.Ohno, M.Akita, S.Kishimoto, K.Maezawa
- Journal Title
  
  IEEE Trans.Electron Devices Vol.50,No.10
  
  Pages: 2015-2020
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Study on Off-State Breakdown in AlGaN/GaN HEMTs2003
- Author(s)
  T.Nakao, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2335-2338
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] 88 GHz Dynamic 2 : 1 Frequency Divider Using Resonant Tunneling Chaos Circuit2003
- Author(s)
  Y.Kawano, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Electron.Lett. 39
  
  Pages: 1546-1547
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Measurement of surface contact potential of AlGaN/GaN heterostructure and n-GaN by Kelvin probe force microscopy2003
- Author(s)
  T.Xie, S.Kishimoto, T.Mizutani
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2372-2375
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator2003
- Author(s)
  M.Ochiai, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, Part1, No.4B
  
  Pages: 2278-2280
- NAID
  130004530615
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Drain current DLTS of AlGaN/GaN HEMTs2003
- Author(s)
  T.Mizutani, T.Okino, K.Kawada, Y.Ohno, S.Kishimoto, K.Maezawa
- Journal Title
  
  phys.stat.sol.(a) Vol.200, Is.1
  
  Pages: 195-198
- NAID
  10011865028
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Experimental Demonstration of a Resonant Tunneling Delta-Sigma Modulator for High-Speed, High-Resolution Analog-to-Digital Converter2003
- Author(s)
  Y.Yokoyama, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. 174
  
  Pages: 243-246
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] Study on Off-State Breakdown in AlGaN/GaN HEMTs2003
- Author(s)
  T.Nakao, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2335-2338
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Experimental demonstration of capacitor-coupled resonant tunneling logic gates for ultra-short gate-delay operation2003
- Author(s)
  T.Tanaka, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 6766-6771
- NAID
  10012563634
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] 88 GHz Dynamic 2:1 Frequency Divider Using Resonant Tunneling Chaos Circuit2003
- Author(s)
  Y.Kawano, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani, K.Sano
- Journal Title
  
  Electron.Lett. Vol.39
  
  Pages: 1546-1547
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Journal Article] AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator2003
- Author(s)
  M.Ochiai, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part 1,No.4B
  
  Pages: 2278-2280
- NAID
  130004530615
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN2003
- Author(s)
  K.Kumada, T.Murata, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, No.4B
  
  Pages: 2250-2253
- NAID
  10010801569
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors2003
- Author(s)
  T.Mizutani, H.Makihara, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part 1,No.2A
  
  Pages: 424-425
- NAID
  10010796112
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Patent] 電界効果トランジスタ2012
- Inventor(s)
  水谷孝
- Industrial Property Rights Holder
  水谷孝
- Filing Date
  2012-02-28
- Data Source
  KAKENHI-PROJECT-21360168
[Patent] 電界効果トランジスタおよびその製造方法2007
- Inventor(s)
  水谷孝, 田中毅, 上田哲三
- Industrial Property Rights Holder
  名古屋大学、松下電器産業
- Industrial Property Number
  2007-078987
- Filing Date
  2007-03-26
- Data Source
  KAKENHI-PROJECT-18206041
[Patent] ΔΣ型モジュレータ及びΔΣ型AD変換器2006
- Inventor(s)
  前澤, 水谷
- Industrial Property Rights Holder
  JST
- Filing Date
  2006-02-10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Patent] 国際特許 PCT出願2006
- Inventor(s)
  前澤宏一, 水谷孝
- Industrial Property Rights Holder
  名古屋大学
- Filing Date
  2006-02-10
- Data Source
  KAKENHI-PROJECT-15360187
[Patent] ΔΣ型モジュレータ及びΔΣ型AD変換器2005
- Inventor(s)
  前澤, 水谷
- Industrial Property Rights Holder
  中部TLO
- Industrial Property Number
  2005-035196
- Filing Date
  2005-02-10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Patent] 電界効果トランジスタ2005
- Inventor(s)
  水谷孝, 前沢宏一
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2005-298241
- Filing Date
  2005-10-12
- Data Source
  KAKENHI-PROJECT-15206040
[Patent] 電界効果トランジスタ2005
- Inventor(s)
  水谷孝, 前澤宏一
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2005-298241
- Filing Date
  2005-10-12
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Patent] 信号生成回路2004
- Inventor(s)
  前澤, 水谷
- Industrial Property Rights Holder
  JST
- Filing Date
  2004-05-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360187
[Patent] N型負性抵抗素子を有する回路2004
- Inventor(s)
  前澤, 水谷
- Industrial Property Rights Holder
  JST
- Industrial Property Number
  2004-147736
- Filing Date
  2004-05-18
- Data Source
  KAKENHI-PROJECT-15360187
[Patent] 電界効果トランジスタ、および電界効果トランジスタの作製方法2003
- Inventor(s)
  水谷孝, 前澤宏一
- Industrial Property Rights Holder
  名古屋大学
- Filing Date
  2003-09-10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Presentation] ゲート先行プロセスによるAl2O3 AlGaN/GaN MOSHFET特性の改善2012
- Author(s)
  宮崎英志、岸本茂、水谷孝
- Organizer
  第59回春季応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] 原子層成膜Al2O3をゲート絶縁膜とするGaN MOSHFETの作製・評価2012
- Author(s)
  宮崎英志、岸本茂、水谷孝
- Organizer
  電気学会電子デバイス研究会
- Place of Presentation
  一碧荘
- Year and Date
  2012-03-08
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] i-GaN薄層挿入によるp-InGaN cap Normally-off型AlGaN/GaN HEMETのゲートリーク電流の低減2012
- Author(s)
  山田博之、岸本茂、水谷孝
- Organizer
  第59回春季応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Carbon Nanotube Nanoelectronics2012
- Author(s)
  Takashi Mizutani
- Organizer
  Int. Symposiium on Carbon Nanotube Nanoe lectronics
- Place of Presentation
  Nagoya, Aichi, Japan
- Data Source
  KAKENHI-ORGANIZER-19054009
[Presentation] Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSFETs by(NH4) 2S surface treatments2011
- Author(s)
  E. Miyazaki, S. Kishimoto, and T. Mizutani
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Toba, Japan
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] 原子層成膜Al2O3をゲート絶縁膜とするGaNMOSFETの作製・評価2011
- Author(s)
  宮崎英志,合田祐司,岸本茂,水谷孝
- Organizer
  電子情報通信学会、電子デバイス研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2011-05-20
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSHFETs by(NH4) 2S surface treatments2011
- Author(s)
  E. Miyazaki and T. Mizutani
- Organizer
  11th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya
- Year and Date
  2011-12-09
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] (NH4) 2S処理によるAl2O3 AlGaN/GaN MOS FET特性の改善2011
- Author(s)
  宮崎英志,岸本茂,水谷孝
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSFETs by(NH4) 2S surface treatments2011
- Author(s)
  E. Miyazaki, S. Kishimoto and T. Mizutani
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  Gifu, Japan
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] NORMALLY-OFF MODE ALGAN/GAN HEMTS WITH P-INGAN CAP LAYER2011
- Author(s)
  T. Mizutani, X. Li, S. Kishimoto, and F. Nakamura
- Organizer
  WOCSDICE2011
- Place of Presentation
  Catania, Italy
- Year and Date
  2011-06-01
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Characterization of CNT-FETs by Scanning Probe Microscopy2010
- Author(s)
  T. Mizutani and T. Takahashi
- Organizer
  217th ECS Meeting
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] HfO2/AlGaN/GaN MOSFETの過渡応答解析2010
- Author(s)
  林慶寿,杉浦俊,岸本茂,水谷孝
- Organizer
  電子情報通信学会、電子デバイス研究会
- Place of Presentation
  東京
- Year and Date
  2010-01-14
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Normally-off mode AlGaN/GaN HEMTs with p-InGaN cap layer2010
- Author(s)
  T. Mizutani, X. Li, and F. Nakamura
- Organizer
  10th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] THIN FILM TRANSISTORS USING PECVD-GROWN CARBON NANOTUBE NETWORK2010
- Author(s)
  T. Mizutani and S. Kishimoto
- Organizer
  2010A3 Symposium on Emerging Materials
- Place of Presentation
  Chon-ju, Korea
- Year and Date
  2010-11-08
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Analysis of transient behavior of AlGaN/GaN MOSFET2010
- Author(s)
  T. Mizutani and Y. Hayashi
- Organizer
  9th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Thin film transistors using PECVD-grown carbon nanotubes2010
- Author(s)
  T. Mizutani and S. Kishimoto
- Organizer
  The International Chemical Congress of Pasific Basin Societies
- Place of Presentation
  Honolulu, Hawaii, USA
- Year and Date
  2010-12-19
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Scanning gate microscopy measurement of CNT-FETs2009
- Author(s)
  Y.Okigawa, S.Kishimoto, Y.Ohno, T.Mizutani
- Organizer
  Tenth International Conference on the Science and Application of Nanotubes
- Place of Presentation
  Beijing, China
- Year and Date
  2009-06-21
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Direct comparison of photoluminescence intensity with (n,m) abundance of single-walled carbon nanotubes2009
- Author(s)
  Y.Ohno, A.Kobayashi, T.Mizutani
- Organizer
  3rd Workshop on Nanotube Optics & Nanospectroscopy
- Place of Presentation
  Matsushima, Japan
- Year and Date
  2009-06-07
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Plasma-enhanced CVD of semiconducting SWNTs for transistor application2009
- Author(s)
  Y.Ohno, T.Mizutani
- Organizer
  The 4th Guadalupe Workshop
- Place of Presentation
  Texas, USA
- Year and Date
  2009-04-17
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Characterization of CNT-FETs by Scanning Probe Microscopy2009
- Author(s)
  T.Mizutani, T.Takahashi
- Organizer
  The 6th Korea-Japan Symposium on Carbon Nanotube
- Place of Presentation
  Okinawa, Japan
- Year and Date
  2009-10-25
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Normally-Off Mode AlGaN/GaN HEMTs with p-InGaN Cap Layer2009
- Author(s)
  Xu Li, S. Kishimoto, F. Nakamura, T. Mizutani
- Organizer
  8th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  Heterostructure Microelectronics, 2009. 08. 25, Mielparque-Nagano, Nagano, Japan. Mielparque-Nagano, Nagano, Japan.
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] HfO2/AlGaN/GaN MOSFETのデバイスシミュレーション:過渡状態解2009
- Author(s)
  林慶寿,岸本茂,水谷孝
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学.
- Year and Date
  2009-09-07
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Fabrication and characterization of high-performance carbon nanotube field-effect transistors2009
- Author(s)
  Y.Ohno, T.Mizutani
- Organizer
  First International Conference on Nanostructured Materials and Nanocomposites
- Place of Presentation
  Kottayam, Kerala, India
- Year and Date
  2009-04-06
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] AlGaN/GaN MOSFETs with Al2O3 Gate Oxide Deposited by Atomic Layer Deposition2009
- Author(s)
  E. Miyazaki, Y. Goda, S. Kishimoto, T. Mizutani
- Organizer
  8th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  Mielparque-Nagano, Nagano, Japan
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Control of carrier type in carbon nanotube FETs by high-k gate insulator2009
- Author(s)
  N.Moriyama, Y.Ohno, S.Kishimoto, T.Mizutani
- Organizer
  The 6th Korea-Japan Symposium on Carbon Nanotube
- Place of Presentation
  Culture Resort Festone, Ginowan, Okinawa JAPAN
- Year and Date
  2009-10-25
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Effects of HfO_2/AlGaN interface of HfO_2/AlGaN/GaN MOSFET studied by device simulation2009
- Author(s)
  Y.Hayashi, S.Sugiura, S.Kishimoto, T.Mizutani
- Organizer
  8^<th> Topical Workshop on Heterostructure Microelectronics (TWHM 2009)
- Place of Presentation
  Mielparque-Nagano, Nagano, Japan
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Carrier-type conversion in carbon nanotube FETs by deposition of HfO22009
- Author(s)
  N.Moriyama, Y.Ohno, S.Kishimoto, T.Mizutani
- Organizer
  International Symposium on Carbon Nanotube Nanoelectronics
- Place of Presentation
  Matsushima, Japan
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Formation of catalyst nano-particles for growth of high-density horizontally aligned carbon nanotubes2009
- Author(s)
  K.Hata, Y.Ohno, S.Kishimoto, T.Mizutani
- Organizer
  International Symposium on Carbon Nanotube Nanoelectronics
- Place of Presentation
  Matsushima, Japan
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Effects of HfO2/AlGaN interface of HfO2/AlGaN/GaN MOSFET studied by device simulation2009
- Author(s)
  Y. Hayashi, S. Sugiura, S. Kishimoto, T. Mizutani
- Organizer
  8th Topical Workshop on Heterostructure Microelectronics
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Electrical characteristics of high-k gate insulator for carbon nanotube FETs2009
- Author(s)
  T.Kitamura, Y.Ohno, S.Kishimoto, T.Mizutani
- Organizer
  The 6th Korea-Japan Symposium on Carbon Nanotube
- Place of Presentation
  Culture Resort Festone, Ginowan, Okinawa JAPAN
- Year and Date
  2009-10-25
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Characterization of CNT-FETs by Scanning Probe Microscopy2009
- Author(s)
  T. Mizutani
- Organizer
  International Symposium on Carbon Nanotube Nanoelectronics
- Place of Presentation
  Matsushima, Japan
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Electrical properties of carbon nanotube FETs [invited]2008
- Author(s)
  T. Mizutani, Y. Ohno, S. Kishimoto
- Organizer
  The Seventh International Conference on Advanced Semiconductor Devices and Microsystems
- Place of Presentation
  Smolenice, Slovakia
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] High-performance n-type Carbon Nanotube FETs with Stability2008
- Author(s)
  N. Moriyama, Y. Ohno, S. Kishimoto, T. Mizutani
- Organizer
  The 5 th Japan-Korea Symposium on Carbon Nanotube (KJ 5)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] ノーマリオフ型GaN電界効果トランジスタ2008
- Author(s)
  水谷孝
- Organizer
  学術振興会162委員会第58回研究会
- Data Source
  KAKENHI-PROJECT-18206041
[Presentation] Carbon Nanotube FETs with CNT Network Channel grown by Grid-inserted Plasma-enhanced CVD2008
- Author(s)
  Y. Ono, S. Kishimoto, Y. Ohno, T. Mizutani
- Organizer
  The 5 th Japan-Korea Symposium on Carbon Nanotube (KJ 5)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Influence of insulator deposition in carbon nanotube FETs2008
- Author(s)
  N. Moriyama, Y. Ohno, S. Kishimoto, T. Mizutani
- Organizer
  21st International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] High-density horizontally-aligned growth of carbon nanotubes for high-performance multi-channel nanotube FETs2008
- Author(s)
  Y. Ohno, D. Phokharatkul, H. Nakano, S. Kishimoto, T. Mizutani
- Organizer
  Ninth International Conference on the Science and Application of Nanotubes
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Fabrication and Characterization of Carbon Nanotube Filed-Effect Transistors2008
- Author(s)
  Y. Ohno,T. Mizutani
- Organizer
  1 st Russian-Japanese Young Scientist Conference on Nanomaterials and Nanotechnology
- Place of Presentation
  Moscow, Russia
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Normally-off AlGaN/GaN MOSFETS with HfO_2 Gate Oxide Deposited by Pulsed-Laser Deposition2008
- Author(s)
  T. Mizutani, S. Sugiura, S. Kishimoto, M. Kuroda, T. Ueda, T. Tanaka
- Organizer
  Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOCSDICE 2008)
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-18206041
[Presentation] Electrical properties of carbon nanotube FETs2008
- Author(s)
  T. Mizutani
- Organizer
  PIE Optics+Photonics
- Place of Presentation
  T San Diego, USA
- Year and Date
  2008-08-10
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Electrical properties of carbon nanotube FETs [invited]2008
- Author(s)
  T. Mizutani
- Organizer
  SPIE Opticst+Photonics 2008
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Carbon Nanotube FETs with CNT Network Channel grown by Grid-inserted Plasma-enhanced CVD2008
- Author(s)
  Y. Ono, S. KishimotO, Y. Ohno, T. Mizutani
- Organizer
  21 st International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Carbon nanotube networks for thin-film transistors grown by grid-inserted plasma-enhanced chemical vapor deposition2008
- Author(s)
  T. Mizutani, S. Kishimoto, Y. Ono, Y. Ohno
- Organizer
  Ninth International Conference on the Science and Application of Nanotubes
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Control of conduction property of carbon, nanotube transistors [invited]2008
- Author(s)
  Y. Ohno, T. Mizutani
- Organizer
  The 5 th Japan-Korea Symposium on Carbon Nanotube (KJ 5)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] High-density horizontally-aligned growth of carbon nanotubes for high-performance field-effect transistors2008
- Author(s)
  Y. Ohno, D. Phokharatkul, H. Nakano, S. Kishimoto, T. Mizutani
- Organizer
  2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Characterization of CNT-FET by Scanning Gate Microscopy2008
- Author(s)
  Y. Okigawa, Y. Ohno, S. Kishimoto, T. Mizutani
- Organizer
  The 5 th Japan-Korea Symposium on Carbon Nanotube (KJ 5)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Normally-off AlGaN/GaN MOSFETS with HfO_2 Gate Oxide Deposited by Pulsed-Laser Deposition2008
- Author(s)
  T. Mizutani, S. Sugiura, S. Kishimoto, et al
- Organizer
  Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOC SDICE 2008)
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-18206041
[Presentation] Enhancement-Mode AlGaN/GaN HEMTs with Thin InGaN Cap Layer2007
- Author(s)
  M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
- Organizer
  7th Int'l Conference of Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PROJECT-18206041
[Presentation] Normally-Off AlGaN/GaN MOSFETs with HfO2 Gate Oxide2007
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
- Organizer
  7th Int'l Conference of Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PROJECT-18206041

1. KISHIMOTO Shigeru (10186215)

# of Collaborated Projects: 6 results

# of Collaborated Products: 112 results
2. MAEZAWA Koichi (90301217)

# of Collaborated Projects: 4 results

# of Collaborated Products: 19 results
3. OHNO Yutaka (10324451)

# of Collaborated Projects: 3 results

# of Collaborated Products: 78 results
4. MATSUMOTO Kazuhiko (80344232)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. MARUYAMA Shigeo (90209700)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. OSAKA Jiro (20377849)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. (MASAHITO Kurouchi (10452187)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
8. HOMMA Yoshikazu (30385512)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. SAITO Susumu (00262254)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. OKADA Susumu (70302388)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. OKOCHI Mina (70313301)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
12. HONDA Hiroyuki (70209328)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
13. KATO Ryuji (50377884)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. SHIKIDA Mitsuhiro (80273291)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. SAWAKI Nobuhiko (70023330)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
16. 石橋幸治 (30211048)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 荻野俊郎 (70361871)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 畠山力三 (00108474)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

MIZUTANI Takashi 水谷 孝

Research Projects

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Fabrication of normally-off GaN MISFETs for high-power applicationPrincipal Investigator

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MAGNETIC FORCE-BASED-DROPLET-HANDLING SYSTEM FOR SINGLE CELL DIGITAL PCR ANALYSIS

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Study on carbon nanotube optoelectronics devicesPrincipal Investigator

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Carbon nanotube nanoelectronicsPrincipal Investigator

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Carbon nanotube nanoelectronicsArea Organizer

Area Organizer

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Fabrication and characterization of normally-off GaN HEMTsPrincipal Investigator

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カーボンナノチューブのナノデバイスへの応用-合成からデバイスへ

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極微細素子を用いた一般化座標上のトンネル現象の研究

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Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTsPrincipal Investigator

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Ultrahigh frequency integrated circuits using resonant tunneling diodes

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Fabrication and Characterization of GaN HEMTs with short gate lengthPrincipal Investigator

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カーボンナノチューブを用いたトランジスタの製作・評価に関する研究Principal Investigator

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Study of ultrahigh-frequency signal generation and processing using resonant tunneling chaos devices

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MIZUTANI Takashi 水谷孝