KUBOYA SHIGEYUKI 窪谷茂幸

… Alternative Names

KUBOYA Shigeyuki 窪谷茂幸

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Researcher Number	70583615
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員
Affiliation (based on the past Project Information) *help	2022 – 2024: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 2021: 三重大学, 地域創生戦略企画室, 特任准教授(研究担当) 2013 – 2016: 東北大学, 金属材料研究所, 助教 2011 – 2012: 東京大学, 大学院・新領域創成科学研究科, 助教 2010 – 2012: 東京大学, 新領域創成科学研究科, 助教
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related Except Principal Investigator Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Crystal engineering
Keywords	Principal Investigator AlGaN / BN / 窒化物半導体 / 深紫外発光素子 Except Principal Investigator 半導体物性 / エピタキシャル成長 / MBE、エピタキシャル / 応用光学・量子光工学 / 単一光子 / 光物性 … More / 貫通らせん転位 / 高品質化 / 炭化ケイ素 / ハイブリッド成長 / 昇華再結晶法 / 溶液成長法 / 転位変換 / SiC / パルスレーザー堆積 / 光導波路 / 反応性スパッタリング / パルスレーザ堆積 / 酸化ジルコニウム / 窒化アルミニウム / 第二高調波発生 / 非線形光学 / 等電子トラップ / 原子層ドーピング / 励起子分子 / 応用光学・量子光光学 / 量子もつれ光子対 / 量子光学 / 半導体 / III族窒化物半導体 / 立方晶III族窒化物 / 結晶成長 / MBE / MOVPE / III-N半導体 / 窒化物半導体 / 立方晶III-N半導体 / 立方晶窒化物半導体 / MBE,エピタキシャル / 結晶工学 / エピタキシャル / 応用光学・量子光工学MBE Less

溶液法／昇華法ハイブリッド成長における欠陥伝播メカニズム解明と高品位化実証
- Principal Investigator
  
  三谷武志
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
二次元層状物質を導入した反転積層窒化物深紫外発光素子の研究Principal Investigator
- Principal Investigator
  
  窪谷茂幸
- Project Period (FY)
  2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Mie University
Development of Compact Deep-UV Laser Based on Wavelength Converter Integrated with Blue Laser Light Sources
- Principal Investigator
  
  Katayama Ryuji
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Osaka University
  Tohoku University
Generation and control of quantum correlated photons from atomic-layer doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructures
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Single Photon Generation from locally doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University

All 2023 2022 2021 2016 2015 2013 2012 2011 2010 2009 Other

All Journal Article Presentation

[Journal Article] 263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities2022
- Author(s)
  Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Shiyu Xiao, Takao Nakamura, Masataka Kubo, Hideto Miyake
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 5 Pages: 055501-055501
- DOI
  10.35848/1882-0786/ac66c2
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04903, KAKENHI-PROJECT-21K14545, KAKENHI-PROJECT-22K14612, KAKENHI-PROJECT-23K23238
[Journal Article] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar p-type GaN grown by metalorganic vapor phase epitaxy2016
- Author(s)
  R. Nonoda, K. Shojiki, T. Tanikawa, S. Kuboya, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FE01-05FE01
- DOI
  10.7567/jjap.55.05fe01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Nanometer scale fabrication and optical response of InGaN/GaN quantum disks2016
- Author(s)
  Yi-Chun Lai, Akio Higo, Takayuki Kiba, Cedric Thomas, Shula Chen, Chang Yong Lee, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Kanako Shojiki, Junichi Takayama, Ichiro Yamashita, Akihiro Murayama, Gou-Chung Chi, Peichen Yu, Seiji Samukawa
- Journal Title
  
  Nanotechnology
  
  Volume: 27 Issue: 42 Pages: 425401-425401
- DOI
  10.1088/0957-4484/27/42/425401
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06359, KAKENHI-PROJECT-26600082
[Journal Article] Large Stokes-like shift in N-polar (000-1) InGaN/GaN multiple-quantum-well light-emitting diodes2016
- Author(s)
  T. Tanikawa, K. Shojiki, S .Kuboya, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FJ03-05FJ03
- DOI
  10.7567/jjap.55.05fj03
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-16K18074
[Journal Article] Homogeneity improvement of N-polar InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane2016
- Author(s)
  Kanako Shojiki, Takashi Hanada, Tomoyuki Tanikawa, Yasuhiko Imai, Shigeru Kimura, Ryohei Nonoda, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 (5S) Issue: 5S Pages: 05FA09-05FA09
- DOI
  10.7567/jjap.55.05fa09
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces2016
- Author(s)
  Takuya Iwabuchi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Tsuguo Fukuda, Takashi Matsuoka
- Journal Title
  
  physica status solidi (a)
  
  Volume: － Issue: 9 Pages: 1600754-1600754
- DOI
  10.1002/pssa.201600754
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN templates by metalorganic vapor phase epitaxy2016
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FA04-05FA04
- DOI
  10.7567/jjap.55.05fa04
- NAID
  210000146483
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Suppression of metastable-phase inclusion in N-polar (000-1) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy2015
- Author(s)
  K. Shojiki, J.H.Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 (22) Issue: 22
- DOI
  10.1063/1.4922131
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
[Journal Article] Red to blue wavelength emission of N-polar (000-1) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy2015
- Author(s)
  K. Shojiki, T. Tanikawa, J.H.Choi, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 8 (6) Issue: 6 Pages: 061005-061005
- DOI
  10.7567/apex.8.061005
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
[Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: In Press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] RF-MBE growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe,
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (In Press)
- URL
  http://www.sciencedirect.com/science/journal/00220248?oldURL=y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013
- Author(s)
  Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
- Journal Title
  
  THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
  
  Volume: 1566 (1) Pages: 538-539
- DOI
  10.1063/1.4848523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2012
- Author(s)
  M. Kakuda, K. Makino, T. Ishida, S.Kuboya, K. Onabe
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol. 9 Issue: 3-4 Pages: 558-561
- DOI
  10.1002/pssc.201100395
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K. Takamiya, Y.Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: Vol.706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H. Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs2012
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 5 Issue: 11 Pages: 111201-111201
- DOI
  10.1143/apex.5.111201
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-20104004, KAKENHI-PROJECT-23360135, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] YSZ(001)微傾斜基板上立方晶InNへの六方晶相の混入傾向2011
- Author(s)
  石田崇,角田雅弘,窪谷茂幸,尾鍋研太郎
- Journal Title
  
  第58回応用物理学関係連合講演会予稿集
  
  Volume: CD-ROM
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] YSZ(001)微傾斜基板上立方晶InNへの六方晶相の混入傾向2011
- Author(s)
  石田崇, 角田雅弘, 窪谷茂幸, 尾鍋研太郎
- Journal Title
  
  2011年春季第58回応用物理学関係連合講演会予稿集
  
  Volume: (CD-ROM)
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(001) substrates2011
- Author(s)
  M. Kakuda, S. Kuboya, K. Onabe,
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol.323 Pages: 91-94
- URL
  http://www.sciencedirect.com/science/journal/00220248?oldURL=y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長2011
- Author(s)
  角田雅弘, 牧野兼三, 石田崇, 窪谷茂幸, 尾鍋研太郎
- Journal Title
  
  2011年春季第58回応用物理学関係連合講演会予稿集
  
  Volume: (CD-ROM)
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長2011
- Author(s)
  角田雅弘,牧野兼三,石田崇,窪谷茂幸,尾鍋研太郎
- Journal Title
  
  第58回応用物理学関係連合講演会予稿集
  
  Volume: CD-ROM
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(001) substrates2011
- Author(s)
  M.Kakuda, S.Kuboya, K.Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 323 Pages: 91-94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO (001) substrates2011
- Author(s)
  M.Kakuda, S.Kuboya, K.Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 323 Pages: 91-94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single is electronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  Physica
  
  Volume: Vol.42, No10 Issue: 10 Pages: 2529-2531
- DOI
  10.1016/j.physe.2009.12.011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2529-2531
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 昇華法SiC成長における貫通らせん転位の基底面欠陥への変換現象の窒素量依存性2023
- Author(s)
  江藤数馬、三谷武志、窪谷茂幸、加藤智久
- Organizer
  応用物理学会先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K23245
[Presentation] Macrostep flow behavior in 4H-SiC solution growth with different solvent compositions and surface orientations2023
- Author(s)
  Mitani Takeshi, Eto Kazuma, Kuboya Shigeyuki, Kato Tomohisa
- Organizer
  The International Conference on Crystal Growth and Epitaxy-ICCGE-20 (ICCGE20)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23245
[Presentation] 4H-SiC溶液成長におけるマクロステップ形状の溶媒添加元素依存性2023
- Author(s)
  三谷武志、江藤数馬、窪谷茂幸、加藤智久
- Organizer
  応用物理学会先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K23245
[Presentation] スパッタ堆積アニールN極性AlN薄膜へのサファイア基板オフ角の影響2022
- Author(s)
  並河楽空、窪谷茂幸、正直花奈子、森隆一、上杉謙次郎、三宅秀人
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] らせん・混合転位密度が低いAlNテンプレートを用いたDUV-LEDの開発2022
- Author(s)
  上杉謙次郎、窪谷茂幸、中村孝夫、正直花奈子、肖世玉、久保雅敬、三宅秀人
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] 金属Alターゲットを用いてスパッタ堆積したアニールAlNの極性制御2022
- Author(s)
  橋本卓実、正直花奈子、上杉謙次郎、肖世玉、窪谷茂幸、三宅秀人
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] MOVPE成長温度とメサの大きさがステップフリーAlN膜の表面形態に与える影響2022
- Author(s)
  山中祐人、正直花奈子、窪谷茂幸、上杉謙次郎、三宅秀人
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] スパッタアニールAlNテンプレート上UV-C AlGaN量子井戸成長2021
- Author(s)
  石原頌也、窪谷茂幸、正直花奈子、上杉謙次郎、肖世玉、三宅秀人
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] AlNテンプレート上へのAlGaNチャネルHEMTの作製と電気的特性評価2021
- Author(s)
  森隆一、上杉謙次郎、窪谷茂幸、正直花奈子、三宅秀人
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] AlN層上のh-BNのスパッタ成膜条件と高温アニール処理条件が結晶性に与える影響2021
- Author(s)
  下嶋恭史、窪谷茂幸、正直花奈子、岩山章、三宅秀人
- Organizer
  第13回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] フラット・トップ型ナノパターンサファイア基板を用いたAlNのMOVPE成長2021
- Author(s)
  和泉志男、正直花奈子、窪谷茂幸、上杉謙次郎、肖世玉、三宅秀人
- Organizer
  第13回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] r面サファイア基板上への高温アニールa面AlN膜作製における基板オフ角依存性2021
- Author(s)
  渋谷康太、上杉謙次郎、肖世玉、正直花奈子、窪谷茂幸、秋山亨、三宅秀人
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] AlN膜の選択成長におけるMOVPE成長条件が表面形態に与える影響2021
- Author(s)
  山中祐人、正直花奈子、窪谷茂幸、上杉謙次郎、三宅秀人
- Organizer
  第13回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] 高温アニールAlN上AlGaNチャネルHEMTのAlGaN膜厚依存性2021
- Author(s)
  森隆一、上杉謙次郎、窪谷茂幸、正直花奈子、三宅秀人
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] ストライプ状溝加工AlNテンプレート上へのHVPE法によるAlN成長2021
- Author(s)
  岡駿斗、奥灘瑠斗、肖世玉、正直花奈子、上杉謙次郎、窪谷茂幸、中村孝夫、三宅秀人
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] スパッタ積層と高温アニールで作製したAlN膜における極性制御2021
- Author(s)
  橋本卓実、正直花奈子、上杉謙次郎、肖世玉、窪谷茂幸、三宅秀人
- Organizer
  第13回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] スパッタアニール法を用いたa面AlNの結晶性の基板オフ角依存性2021
- Author(s)
  渋谷康太、上杉謙次郎、肖世玉、正直花奈子、窪谷茂幸、秋山亨、三宅秀人
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] 高温アニールしたAlN上におけるDUV-LEDの高効率化2021
- Author(s)
  上杉謙次郎、窪谷茂幸、中村孝夫、正直花奈子、肖世玉、三宅秀人
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] 高Al組成n型AlGaNへの選択再成長n型GaNを用いたオーミックコンタクト形成2021
- Author(s)
  池内陸也、上杉謙次郎、正直花奈子、窪谷茂幸、三宅秀人
- Organizer
  第13回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] 高温アニールAlNテンプレートを用いた220 nm帯発光AlGaN量子井戸の成長2021
- Author(s)
  石原頌也、窪谷茂幸、正直花奈子、上杉謙次郎、肖世玉、三宅秀人
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PROJECT-21K04903
[Presentation] 横型疑似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計2015
- Author(s)
  三谷悠貴，片山竜二，劉陳燁，正直花奈子，谷川智之，窪谷茂幸，松岡隆志
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会第7回窒化物半導体研究会
- Place of Presentation
  東北大学片平さくらホール、宮城県仙台市
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates2015
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会第7回窒化物半導体研究会
- Place of Presentation
  東北大学片平さくらホール、宮城県仙台市
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Polarity-controlled MOVPE growth of GaN on PLD-AlN templates2015
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  The 34th Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖、滋賀県守山市
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Y立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長2013
- Author(s)
  角田雅弘,森川生,窪谷茂幸,片山竜二,矢口裕之,尾鍋研太郎
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(神奈川)
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定2012
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs2012
- Author(s)
  K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
- Organizer
  31st International Conference on the Physics of Semiconductors
- Place of Presentation
  スイス連邦工科大学チューリッヒ校(スイス)
- Year and Date
  2012-08-02
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation]2012
- Author(s)
  角田雅弘,森川生,窪谷茂幸,片山竜二,尾鍋研太郎
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学(東京)
- Year and Date
  2012-04-27
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of Cubic AlN Films on MgO substrates by MBE2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, H. Yaguchi, K. Onabe,
- Organizer
  GCOE International Sympsium on Physical Sciences Frontier
- Place of Presentation
  東京
- Year and Date
  2012-12-09
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長(3)2012
- Author(s)
  角田雅弘, 森川生、窪谷茂幸, 尾鍋研太郎
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都新宿区)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] GaAs中窒素δドープ超格子のエネルギー構造評価2012
- Author(s)
  野口駿介, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光2012
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長(3)2012
- Author(s)
  角田雅弘,森川生,窪谷茂幸,尾鍋研太郎
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京).
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs中の窒素原子対が形成する単一の等電子トラップからの発光に対する一軸応力の影響2012
- Author(s)
  新井佑也, 星野真也, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2012
- Author(s)
  R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
- Organizer
  17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  奈良県新公会堂(奈良県)
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Growth of cubic AlN films on MgO substrate via2-step cubic GaN buffer layer by RF-MBE2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, K. Onabe
- Organizer
  31th Electronic Materials Symposium (EMS-31)
- Place of Presentation
  伊豆(静岡)
- Year and Date
  2012-07-11
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長2012
- Author(s)
  金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] RF-MBEGrowth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  奈良(奈良)
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec, Canada)(招待講演)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K.Takamiya, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Growth of cubic AlN films on MgO substrate using cubic GaN buffer layer by RF-MBE2011
- Author(s)
  M. Kakuda, K. Makino, T. Ishida, S. Kuboya, K. Onabe
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors(APWS-2011)
- Place of Presentation
  Toba,Mie, Japan.
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic InN films on YSZ(001) vicinal substrates by RF-MBE2011
- Author(s)
  T. Ishida, M. Kakuda, S. Kuboya, K. Onabe
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba, Mie, Japan.
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] YSZ(001)微傾斜基板上立方晶InNへの六方晶相の混入比率の偏り2011
- Author(s)
  石田崇,角田雅弘,窪谷茂幸,尾鍋研太郎
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] GaAs(110)基板上に作製した窒素δドープGaAsにおける等電子トラップからの発光特性評価2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H.Yaguchi
- Organizer
  The 7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec,Canada)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2011
- Author(s)
  M.Kakuda, K.Makino, T.Ishida, S.Kuboya, K.Onabe
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2011
- Author(s)
  M.Kakuda, K.Makino, T.Ishida, S.Kuboya, K.Onabe
- Organizer
  30th Electronic Materials Symposium (EMS-30)
- Place of Presentation
  Laforet Biwako, Moriyama, Shiga, Japan
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Biexciton Emission from Single Is oelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Organizer
  The 3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] RF-MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2011
- Author(s)
  M. Kakuda, K. Makino, T. Ishida, S. Kuboya, K. Onabe
- Organizer
  30th Electronic Materials Symposium (EMS-30)
- Place of Presentation
  守山(滋賀).
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] YSZ(001)微傾斜基板上立方晶InNへの六方晶相の混入比率の偏り2011
- Author(s)
  石田崇、角田雅弘, 窪谷茂幸, 尾鍋研太郎
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県山形市)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic AlN films on MgO substrate using cubic GaN buffer layer by RF-MBE2011
- Author(s)
  M.Kakuda, K.Makino, T.Ishida, S.Kuboya, K.Onabe
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba Hotel International Toba, Mie, Japan
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic InN films on YSZ(001) vicinal substrates by RF-MBE2011
- Author(s)
  T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba Hotel International Toba, Mie, Japan
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Cubic III-nitrides: potential photonic materials (Invited)2011
- Author(s)
  K. Onabe, S.Sanorpim, H. Kato, M.Kakuda, T. Nakamura, K. Nakamura, S.Kuboya, R. Katayama
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, CA,USA.
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs(110)中の単一等電子トラップからの発光の偏光特性2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Cubic III-nitrides : potential photonic materials2011
- Author(s)
  K.Onabe, S.Sanorpim, H.Kato, M.Kakuda, T.Nakamura, K.Nakamura, S.Kuboya, R.Katayama
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, CA, USA(Invited)
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長(2)2011
- Author(s)
  角田雅弘,牧野兼三,石田崇,窪谷茂幸,尾鍋研太郎
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Cubic InN films on YSZ(001) vicinal substrates grown by RF-MBE2011
- Author(s)
  T. Ishida, M. Kakuda, S. Kuboya, K.Onabe
- Organizer
  30th Electronic Materials Symposium (EMS-30)
- Place of Presentation
  守山(滋賀).
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2011
- Author(s)
  M. Kakuda, K. Makino, T. Ishida, S. Kuboya, K. Onabe
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK.
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Cubic InN films on YSZ(001) vicinal substrates grown by RF-MBE2011
- Author(s)
  T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  30th Electronic Materials Symposium (EMS-30)
- Place of Presentation
  Laforet Biwako, Moriyama, Shiga, Japan
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長(2)2011
- Author(s)
  角田雅弘, 牧野兼三、石田崇、窪谷茂幸, 尾鍋研太郎
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県山形市)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MOVPE growth of cubic GaN films via an AlGaAs intermediate layer on GaAs (001) substrates2010
- Author(s)
  H.Kato, Y.Seki, Q.T.Thieu, S.Kuboya, K.Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  Laforet Shuzenji, Shuzenji, Japan
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE法によるMgO(001)基板上Siドープ立方晶AlGaNの薄膜成長2010
- Author(s)
  角田雅弘,窪谷茂幸,尾鍋研太郎
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-08-27
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MOVPE growth of cubic GaN films via an AlGaAs intermediate layer on GaAs(001) substrates2010
- Author(s)
  H. Kato, Y. Seki, Q. T. Thieu, S.Kuboya, K. Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  伊豆(静岡).
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Growth of Si doped cubic GaN and AlGaN films on MgO(001) substrates by RF-MBE2010
- Author(s)
  M. Kakuda, S.Kuboya, K. Onabe,
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  伊豆(静岡).
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs中の等電子トラップを形成する窒素原子対配列に関する研究2010
- Author(s)
  星野真也, 遠藤雄太, 福島俊之, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] RF-MBE Growth of Cubic InN and InGaN Films on YSZ(001) Substrates2010
- Author(s)
  K. Nakamura, T. Ishida, M. Kakuda,S. Kuboya, K. Onabe
- Organizer
  International Workshop on Nitride Semiconductors(IWN2010)
- Place of Presentation
  Tampa,Florida, USA.
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of Si doped cubic GaN and AlGaN films on MgO (001) substrates by RF-MBE2010
- Author(s)
  M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  Laforet Shuzenji, Shuzenji, Japan
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE growth of cubic InN and InGaN films on YSZ (001) substrates2010
- Author(s)
  K.Nakamura, T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  Laforet Shuzenji, Shuzenji, Japan
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MOVPE growth of c-GaN films via an AlGaAs intermediate Layer2010
- Author(s)
  H. Kato, Y. Seki, Q. T. Thieu, S.Kuboya, K. Onabe
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN3)
- Place of Presentation
  Montpellier,France.
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE Growth of Si doped cubic GaN and AlGaN films on MgO(001) substrates2010
- Author(s)
  M. Kakuda, S.Kuboya, K. Onabe,
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE2010)
- Place of Presentation
  Berlin,Germany.
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE growth of cubic InN and InGaN films on YSZ(001) substrates2010
- Author(s)
  K. Nakamura, T. Ishida, M. Kakuda,S. Kuboya, K. Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  伊豆(静岡)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2010
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Growth of Si doped c-AlGaN and c-GaN films on MgO (001) substrate by RF-MBE2010
- Author(s)
  M.Kakuda, Y.Fukuhara, K.Nakamura, S.Kuboya, K.Onabe
- Organizer
  8th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2010)
- Place of Presentation
  Beijing, China
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of c-GaN Films via an AlGaAs Intermediate Layer on GaAs (001) Substrates by MOVPE2010
- Author(s)
  H.Kato, Y.Seki, Q.T.Thieu, S.Kuboya, K.Onabe
- Organizer
  8th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2010)
- Place of Presentation
  Beijing, China
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of c-GaN Films via an AlGaAs Intermediate Layer on GaAs(001) Substrates by MOVPE2010
- Author(s)
  H. Kato, Y. Seki, Q. T. Thieu, S. Kuboya, K. Onabe
- Organizer
  8th International Symposium on Semiconductor Light Emitting Devices(ISSLED 2010)
- Place of Presentation
  Beijing, China.
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 極低窒素濃度GaAsNにおける窒素ペアからの発光の窒素濃度依存性2010
- Author(s)
  石川輝, 八木修平, 土方泰斗, 吉田貞史, 岡野真人, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] RF-MBE Growth of Cubic InN and InGaN Films on YSZ (001) Substrates2010
- Author(s)
  K.Nakamura, T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of Si doped c-AlGaN and c-GaNfilms on MgO (001) substrate byRF-MBE2010
- Author(s)
  M. Kakuda, Y. Fukuhara, K.Nakamura, S. Kuboya, K. Onabe,
- Organizer
  8th International Symposiumon Semiconductor Light Emitting Devices (ISSLED 2010)
- Place of Presentation
  Beijing, China.
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE Growth of Si doped cubic GaN and AlGaN films on MgO (001) substrates2010
- Author(s)
  M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  16th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic InN and InGaN films on YSZ (001) substrates by RF-MBE2010
- Author(s)
  K.Nakamura, T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  16th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-27
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic InN and InGaN films on YSZ(001) substrates by RF-MBE2010
- Author(s)
  K. Nakamura, T. Ishida, M. Kakuda,S. Kuboya, K. Onabe
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE2010)
- Place of Presentation
  Berlin, Germany.
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE法によるMgO(001)基板上Siドープ立方晶AlGaNの薄膜成長2010
- Author(s)
  角田雅弘, 窪谷茂幸, 尾鍋研太郎
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県長崎市)
- Year and Date
  2010-08-27
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MOVPE growth of c-GaN films via an AlGaAs intermediate Layer on GaAs (001) substrates2010
- Author(s)
  H.Kato, Y.Seki, Q.T.Thieu, S.Kuboya, K.Onabe
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Photoluminescence from single is oelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2009
- Author(s)
  T. Fukushima, M. Ito, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  The 14th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  神戸国際会議場 (兵庫県)
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009
- Author(s)
  石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光2009
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2009
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009
- Author(s)
  石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学片平さくらホール（宮城県仙台市）
- Year and Date
  2015-05-07 – 2015-05-08
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Investigation of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by m-line Spectroscopy
- Author(s)
  N. Yoshinogawa, R. Katayama, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  La-Foret Shuzenji, Shizuoka, Japan
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Growth of Cubic AlN Films on MgO substrates by MBE
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
- Organizer
  GCOE International Sympsium on Physical Sciences Frontier
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic AlN films on MgO substrate via 2-step cubic GaN buffer layer by RF-MBE
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  31th Electronic Materials Symposium (EMS-31)
- Place of Presentation
  Izu, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長
- Author(s)
  角田雅弘、森川生、窪谷茂幸、片山竜二、矢口裕之、尾鍋研太郎
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学（厚木市）
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] MOVPE Growth of GaN onto PLD-Grown AlN Interlayer on GaN Templates
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’15)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2015-04-22 – 2015-04-23
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] RF-MBE Growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  Nara, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs
- Author(s)
  K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
- Organizer
  4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  UCLAコンファレンス・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] 横型擬似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計
- Author(s)
  三谷悠貴, 片山竜二, 劉陳燁, 正直花奈子, 谷川智之, 窪谷茂幸, 松岡隆志
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学片平さくらホール（宮城県仙台市）
- Year and Date
  2015-05-07 – 2015-05-08
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Accurate Determination of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by Spectroscopic m-line Technique
- Author(s)
  R. Katayama, N. Yoshinogawa, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wrocław Congress Center, Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Design of the Transverse Quasi-Phase Matched AlN Waveguides for Deep-UV Second Harmonic Generation
- Author(s)
  Y. Mitani, R. Katayama, J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  The 34th Electronic Materials Symposium
- Place of Presentation
  La-Foret Biwako, Shiga, Japan
- Year and Date
  2015-07-15 – 2015-07-17
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] RF-MBE法による立方晶AlNの結晶成長
- Author(s)
  角田雅弘、森川生、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学（東京都目黒区）
- Data Source
  KAKENHI-PROJECT-22360005

1. KATAYAMA Ryuji (40343115)

# of Collaborated Projects: 4 results

# of Collaborated Products: 61 results
2. YAGUCHI Hiroyuki (50239737)

# of Collaborated Projects: 3 results

# of Collaborated Products: 38 results
3. ONABE Kentaro (50204227)

# of Collaborated Projects: 3 results

# of Collaborated Products: 90 results
4. HIJIKATA Yasuto (70322021)

# of Collaborated Projects: 2 results

# of Collaborated Products: 32 results
5. YAGI Shuhei (30421415)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
6. AKIYAMA Hidefumi (40251491)

# of Collaborated Projects: 2 results

# of Collaborated Products: 28 results
7. 横山弘之 (60344727)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 谷川智之 (90633537)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
9. 三谷武志 (90586306)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
10. 江藤数馬 (70711828)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
11. SAKUNTAM Sanorpim

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 寒川誠二

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
13. 村山明宏

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

KUBOYA SHIGEYUKI 窪谷 茂幸

KUBOYA Shigeyuki 窪谷 茂幸

Research Projects

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Co-Researchers

溶液法／昇華法ハイブリッド成長における欠陥伝播メカニズム解明と高品位化実証

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二次元層状物質を導入した反転積層窒化物深紫外発光素子の研究Principal Investigator

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Development of Compact Deep-UV Laser Based on Wavelength Converter Integrated with Blue Laser Light Sources

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Generation and control of quantum correlated photons from atomic-layer doped semiconductors

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Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructures

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Single Photon Generation from locally doped semiconductors

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[Journal Article] 263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities2022

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[Journal Article] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar p-type GaN grown by metalorganic vapor phase epitaxy2016

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[Journal Article] Nanometer scale fabrication and optical response of InGaN/GaN quantum disks2016

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[Journal Article] Large Stokes-like shift in N-polar (000-1) InGaN/GaN multiple-quantum-well light-emitting diodes2016

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[Journal Article] Homogeneity improvement of N-polar InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane2016

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[Journal Article] Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces2016

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[Journal Article] Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN templates by metalorganic vapor phase epitaxy2016

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[Journal Article] Suppression of metastable-phase inclusion in N-polar (000-1) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy2015

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KUBOYA SHIGEYUKI 窪谷茂幸

KUBOYA Shigeyuki 窪谷茂幸