TSUCHIYA Hideaki 土屋英昭

… Alternative Names

土屋英昭ツチヤヒデアキ

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Researcher Number	80252790
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2011 – 2015: 神戸大学, 工学(系)研究科(研究院), 准教授 2008 – 2009: Kobe University, 大学院・工学研究科, 准教授 2007 – 2009: Kobe University, 工学研究科, 准教授 2003 – 2006: 神戸大学, 工学部, 助教授 2001 – 2002: 神戸大学, 工学部, 助手 1995: 神戸大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Electronic materials/Electric materials / Engineering fundamentals / 電子デバイス・機器工学 Except Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator バリスティック輸送 / ナノスケールMOSFET / 量子力学的効果 / ゲルマネン / シリセン / グラフェン / 量子補正モンテカルロ法 / モンテカルロシミュレーション / 量子輸送 / 量子輸送モデル … More / ナノ構造デバイス / モンテカルロ / h-BN / quantum-corrected Monte Carlo / scaling limit / new device structures / ballistic transpor / quantum transport model / nano-scale MOSFET / 最適素子構造設計 / バリスティック極限性能 / キャリア注入速度 / 新構造トランジスタ / 量子モンテカルロ計算 / ナノMOSトランジスタ / スケーリング則 / 新型構造デバイス / 極微細Si MOSFET / 微細化限界 / 新構造デバイス / ウィグナー・モンテカルロシミュレーション / グラフェンナノ材料 / 低消費電力 / グリーンナノデバイス / ナノデバイスシミュレーション / ジャンクションレス・トランジスタ / ウィグナーモンテカルロ法 / III-V MOS / ナノワイヤ / III-V MOSFET / 低電圧駆動 / 原子論 / ジャンクションレストランジスタ / ナノワイヤFET / グラフェンFET / 高移動度材料 / 後方散乱 / 量子閉じ込め効果 / 粒子分割法 / 3次元構造MOSFET / 新チャネル構造MOSFET / テクノロジーブースター / 非Si材料MOSFET / 量子補正モンテカル / 準バリスティック輸送 / 量子効果 / 電子デバイス・集積回路 / ウィグナー関数法 / ナノワイヤトランジスタ / 電流駆動力 / 高移動度チャネルMOSFET / ショットキーMOSFET / 量子補正モンテカル法 / 集積回路 / 電子デバイス / 粒子・波動二重性 / 量子力学的補正 / ナノスケールM0SFET / 量子モンテカルロ法 / 量子補正ポテンシャル / 電子-電子相互作用 / 量子細線の高温多モード動作 / LOフォノン散乱 / ウィグナー関数 … More Except Principal Investigator Shot Noise / Nanoscale MOSFET / Nonequilibrium Green's Function / Quantum Transport / ショット雑音 / ダブルゲートMOSFET / 量子輸送 / 非平衡グリーン関数法 / Monte Carlo Simulation / クーロン相関 / フェルミ相関 / 非平衡グリーン関数理論 / 量子補正モンテカルロ法 / Monte Carlo Simulatiom / Current Fluctuations / 電流揺らぎ / ダブルゲートMOSGET / 非平衡グリーン関数 / モンテカルロ法 / 電流雑音 / ナノスケールMOSFET Less

2次元単原子層材料を用いた集積デバイスの性能予測Principal Investigator
- Principal Investigator
  
  土屋英昭
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kobe University
Research on green nanodevices toward the realization of ultra-low power LSIPrincipal Investigator
- Principal Investigator
  
  TSUCHIYA Hideaki
- Project Period (FY)
  2011 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kobe University
Quasi-ballistic transport modeling of emerging MOSFETs with new channel materials and new device architecturesPrincipal Investigator
- Principal Investigator
  
  TSUCHIYA Hideaki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kobe University
Quantum mechanical simulation of current noise of nanoscale double-gate MOSFETs
- Principal Investigator
  
  MIYOSHI Tanroku
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kobe University
Research of quantum transport in silicon integrated devicesPrincipal Investigator
- Principal Investigator
  
  TSUCHIYA Hideaki
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kobe University
Research of current fluctuations of nanoscaled MOSFETs based upon quantum transport models
- Principal Investigator
  
  MIYOSHI Tanroku
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kobe University
ナノ構造デバイスシミュレーションにおける量子補正多粒子モンテカルロ法に関する研究Principal Investigator
- Principal Investigator
  
  土屋英昭
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Engineering fundamentals
- Research Institution
  Kobe University
電子波デバイスの動的量子輸送モデルに関する研究Principal Investigator
- Principal Investigator
  
  土屋英昭
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kobe University

[Book] ナノ構造エレクトロニクス入門2013
- Author(s)
  土屋英昭
- Total Pages
  257
- Publisher
  コロナ社
- Data Source
  KAKENHI-PROJECT-23560395
[Book] 量子物理2012
- Author(s)
  鎌倉良成，宇野重康，伊藤博介，土屋英昭，尾崎俊二
- Total Pages
  232
- Publisher
  オーム社
- Data Source
  KAKENHI-PROJECT-23560395
[Book] ナノエレクトロニクスの基礎2007
- Author(s)
  三好旦六, 小川真人, 土屋英昭
- Total Pages
  261
- Publisher
  培風館
- Data Source
  KAKENHI-PROJECT-18560334
[Book] ナノエレクトロニクスの基礎2007
- Author(s)
  三好旦六、小川真人、土屋英昭
- Total Pages
  261
- Publisher
  培風館
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Simulation of Electron Transport in Atomic Monolayer Semiconductor FETs2015
- Author(s)
  Hideaki Tsuchiya, Shiro Kaneko, Noriyasu Mori, and Hideki Hirai
- Journal Title
  
  Journal of Advanced Simulation in Science and Engineering
  
  Volume: 2
- NAID
  130005073847
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors2015
- Author(s)
  Masato Ichii, Ryoma Ishida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 62 Issue: 4 Pages: 1255-1261
- DOI
  10.1109/ted.2015.2399954
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] 微細化限界に挑戦する新型MOSFETのキャリア輸送特性とシミュレーション技術2015
- Author(s)
  土屋英昭
- Journal Title
  
  電子情報通信学会論文誌C
  
  Volume: J98-C Pages: 70-78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Simulation of Electron Transport in Atomic Monolayer Semiconductor FETs2015
- Author(s)
  Hideaki Tsuchiya, Shiro Kaneko, Noriyasu Mori, and Hideki Hirai
- Journal Title
  
  J. Advanced Simulation in Science and Engineering
  
  Volume: 2 Pages: 127-152
- NAID
  130005073847
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K05985
[Journal Article] Effects of Increased Acoustic Phonon Deformation Potential and Surface Roughness Scattering on Quasi-Ballistic Transport in Ultrascaled Si-MOSFETs2014
- Author(s)
  Shunsuke Koba, Ryoma Ishida, Yuko Kubota, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 11 Pages: 114301-114301
- DOI
  10.7567/jjap.53.114301
- NAID
  210000144577
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Channel Length Scaling Limits of III-V Channel MOSFETs Governed by Source-Drain Direct Tunneling2014
- Author(s)
  Shunsuke Koba, Masaki Ohmori, Yōsuke Maegawa, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 4S Pages: 04EC10-04EC10
- DOI
  10.7567/jjap.53.04ec10
- NAID
  210000143564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Electron Mobility Calculation for Graphene on Substrates2014
- Author(s)
  Hideki Hirai, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 116 Issue: 8 Pages: 083703-083703
- DOI
  10.1063/1.4893650
- NAID
  120005593488
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Theoretical Performance Estimation of Silicene, Germanene, and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport2014
- Author(s)
  Shiro Kaneko, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 3 Pages: 35102-35102
- DOI
  10.7567/apex.7.035102
- NAID
  210000137032
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Increased Subthreshold Current due to Source-Drain Direct Tunneling in Ultrashort Channel III-V Metal-Oxide-Semiconductor Field-Effect Transistors2013
- Author(s)
  Shunsuke Koba, Yōsuke Maegawa, Masaki Ohmori, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 6 Pages: 64301-64301
- DOI
  10.7567/apex.6.064301
- NAID
  210000136675
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Channel Length Scaling Effects on Device Performance of Junctionless Field-Effect Transistor2013
- Author(s)
  K. Nagai, H. Tsuchiya, M. Ogawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 4R Pages: 44302-44302
- DOI
  10.7567/jjap.52.044302
- NAID
  40019637158
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Computational Study on Band Structure Engineering using Graphene Nanomeshes2013
- Author(s)
  Ryutaro Sako, Naomi Hasegawa, Hideaki Tsuchiya, and Matsuto Ogawa
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 113 Issue: 14 Pages: 143702-143702
- DOI
  10.1063/1.4800624
- NAID
  120005593487
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Orientational Dependence in Device Performances of InAs and Si Nanowire MOSFETs under Ballistic Transport2013
- Author(s)
  K. Shimoida, Y. Yamada, H. Tsuchiya, M. Ogawa
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 60 Issue: 1 Pages: 117-122
- DOI
  10.1109/ted.2012.2228199
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit2013
- Author(s)
  K. Shimoida, H. Tsuchiya, Y. Kamakura, N. Mori, M. Ogawa
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 3 Pages: 34301-34301
- DOI
  10.7567/apex.6.034301
- NAID
  10031159845
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels2012
- Author(s)
  H. Tsuchiya, H. Hosokawa, R. Sako, N. Hasegawa, M. Ogawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 5R Pages: 55103-55103
- DOI
  10.1143/jjap.51.055103
- NAID
  40019280437
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Atomistic modeling of electron-phonon interaction and electron mobility in Si nanowires2012
- Author(s)
  Y.Yamada, H.Tsuchiya, M.Ogawa
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 111 Issue: 6 Pages: 63720-63720
- DOI
  10.1063/1.3695999
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J00804, KAKENHI-PROJECT-23560395
[Journal Article] Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs under Ballistic Transport2012
- Author(s)
  Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 59巻 Issue: 1 Pages: 206-211
- DOI
  10.1109/ted.2011.2172615
- NAID
  120003775540
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation2012
- Author(s)
  J. Choi, K. Nagai, S. Koba, H. Tsuchiya, M. Ogawa
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 5 Pages: 54301-54301
- DOI
  10.1143/apex.5.054301
- NAID
  10030593716
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors2011
- Author(s)
  Yosuke Maegawa, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  Applied Physics Express
  
  Volume: 4巻 Issue: 8 Pages: 84301-84301
- DOI
  10.1143/apex.4.084301
- NAID
  10029467335
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs2011
- Author(s)
  Ryutaro Sako, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 58巻 Issue: 10 Pages: 3300-3306
- DOI
  10.1109/ted.2011.2161992
- NAID
  120003775539
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560395
[Journal Article] Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects2010
- Author(s)
  Hideaki Tsuchiya, Haruki Ando, Shun Sawamoto, Tadashi Maegawa, Takeshi Hara, Hironobu Yao, Matsuto Ogawa
- Journal Title
  
  IEEE Trans.on Electron Devices 第57巻・第2号
  
  Pages: 406-414
- NAID
  120002753075
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects2010
- Author(s)
  H. Tsuchiya, H. Ando, S. Sawamoto, T. Maegawa, T. Hara, H. Yao, M. Ogawa
- Journal Title
  
  IEEE Trans. on Electron Devices Vol.57,No.2
  
  Pages: 406-414
- NAID
  120002753075
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs2010
- Author(s)
  H. Tsuchiya, A. Maenaka, T. Mori, Y. Azuma
- Journal Title
  
  IEEE Electron Device Letters Vol.31,No.4
  
  Pages: 365-367
- NAID
  120002736951
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Quantum Transport Simulation of Silicon Nanowire Transistors Based on DirectSolution Approach of the Wigner Transport Equation, to be published in IEEE Trans. On2009
- Author(s)
  Y.Yamada, H.Tsuchiya and M.Ogawa
- Journal Title
  
  Electron Devices Vol.56, No.7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Strain Effects on Electronic Bandstructures in Nanoscaled Silicon : From Bulk to Nanowire2009
- Author(s)
  Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  IEEE Trans.on Electron Devices 第56巻・第4号
  
  Pages: 553-559
- NAID
  120001460047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Device Physics and Simulation Techniques for Nanoscale SOI-MOSFETs(invited)2009
- Author(s)
  Hideaki Tsuchiya, Yoshihiro Yamada, Satofumi Souma, Matsuto Ogawa
- Journal Title
  
  ECS Transactions 第19巻・第4号
  
  Pages: 211-220
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Strain Effects on Electronic Bandstructures in Nanoscaled Silicon: From Bulk to Nanowire2009
- Author(s)
  T. Maegawa, T. Yamauchi, T. Hara, H. Tsuchiya, M. Ogawa
- Journal Title
  
  IEEE Trans. on Electron Devices Vol.56,No.4
  
  Pages: 553-559
- NAID
  120001460047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Enhancement of Carrier Ballistic Transport in Schottky S/D MOSFETs2009
- Author(s)
  Wei Wang, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  ECS Transactions 第19巻・第1号
  
  Pages: 345-350
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Quantum Transport Simulation of Silicon Nanowire Transistors Based on Direct Solution Approach of the Wigner Transport Equation2009
- Author(s)
  Y. Yamada, H. Tsuchiya, M. Ogawa
- Journal Title
  
  IEEE Trans. on Electron Devices Vol.56,No.7
  
  Pages: 1396-1401
- NAID
  120001460046
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Quantum Transport Simulation of Silicon Nanowire Transistors Based on Direct Solution Approach of the Wigner Transport Equation2009
- Author(s)
  Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  IEEE Trans.on Electron Devices 第56巻・第7号
  
  Pages: 1396-1401
- NAID
  120001460046
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Enhancement of Ballistic Efficiency due to Source to Channel Heterojunction Barrier in Si Metal Oxide Semiconductor Field Effect Transistors2009
- Author(s)
  W. Wang, H. Tsuchiya, M. Ogawa
- Journal Title
  
  J. Appl. Phys. Vol.106,No.2
  
  Pages: 24515-24515
- NAID
  120002753081
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Strain Effects on Electronic Bandstructures in Nanoscaled Silicon : From Bulk to Nanowire2009
- Author(s)
  T.Maegawa, T.Yamauchi, T.Hara, H.Tsuchiya and M. Ogawa
- Journal Title
  
  IEEE Trans. on Electron Devices on Electron Devices Vol.56, No.4,
  
  Pages: 553-559
- NAID
  120001460047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Enhancement of Ballistic Efficiency due to Source to Channel Heterojunction Barrier in Si Metal Oxide Semiconductor Field Effect Transistors2009
- Author(s)
  Wei Wang, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  J.Appl.Phys. 第106巻・第2号
  
  Pages: 24515-24515
- NAID
  120002753081
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Drive Current of Ultrathin Ge-on-Insulatorn-Channel MOSFETs2008
- Author(s)
  Y.Azuma, T.Mori and H.Tsuchiya
- Journal Title
  
  Phys.Stat.Sol. (c) Vol.5, No.9
  
  Pages: 3153-3155
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Three-Dimensional Ouanlum Transport Simulation of Si-Nanowire Transistors Based on Wigncr Function Model2008
- Author(s)
  Yoshihiro Yamada, Hideaki Tsuchiya
- Journal Title
  
  Extended Abstracts of the 2008 lnternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD) なし
  
  Pages: 281-284
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Comparative Study on Drive Current of III-V Semiconductor, Ge and Si Channeln-MOSFETs based on Quantum-Corrected Monte Carlo Simulation2008
- Author(s)
  Takashi Mori, Yusuke Azuma, Hideaki Tsuchiya, and Tanroku Miyoshi
- Journal Title
  
  IEEE Transactions on Nanotechnology 第7巻・第2号
  
  Pages: 237-241
- NAID
  120002753076
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Influence of Elastic and Inelastic Phonon Scattering on the Drive Current of Quasi-Ballistic MOSFETs2008
- Author(s)
  Hideaki Tsuchiya, Shin-ichi Takagi
- Journal Title
  
  IEEE Trans. on Electron Devices 第55巻・第9号
  
  Pages: 2397-2402
- NAID
  120001460048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Drive Current of Ultrathin Ge-on-Insulator n-Channel MOSFETs2008
- Author(s)
  Y. Azuma, T. Mori, H. Tsuchiya
- Journal Title
  
  Phys. Stat. Sol. (c) Vol.5,No.9
  
  Pages: 3153-3155
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Comparative Study on Drive Currentof III-V Semiconductor, Ge and Si Channeln-MOSFETs based on Quantum-Corrected Monte Carlo Simulation2008
- Author(s)
  T Mori, Y.Azuma, H.Tsuchiya and T.Miyoshi
- Journal Title
  
  IEEE Trans. On Nanotechnology Nanotechnology Vol.7, No.2,
  
  Pages: 237-241
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Atomistic Study on Electronic Properties of Nanoscale SOI Channels2008
- Author(s)
  T. Hara, Y. Yamada, T. Maegawa, H. Tsuchiya
- Journal Title
  
  J. Physics: Conference Series Vol.109
  
  Pages: 12012-12012
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Atomistic Study on Electronic Properties of Nanoscale SOI Channels2008
- Author(s)
  T.Hara, Y.Yamada, T.Maegawa and H.Tsuchiya
- Journal Title
  
  J.Physics : Conference Series, Physics : Conference Series Vol.109,012012
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Influence of Elastic and Inelastic Phonon Scattering on the Drive Current of Quasi-Ballistic MOSFETs2008
- Author(s)
  H. Tsuchiya, S. Takagi
- Journal Title
  
  IEEE Trans. on Electron Devices Vol.55,No.9
  
  Pages: 2397-2402
- NAID
  120001460048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Comparative Study on Drive Current of III-V Semiconductor, Ge and Si Channel n-MOSFETs based on Quantum-Corrected Monte Carlo Simulation2008
- Author(s)
  T. Mori, Y. Azuma, H. Tsuchiya, T. Miyoshi
- Journal Title
  
  IEEE Trans. on Nanotechnology Vol.7,No.2
  
  Pages: 237-241
- NAID
  120002753076
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Drive Current of Ultrathin Ge-on-Insulator n-Channel MOSFETs2008
- Author(s)
  Yusuke Azuma, Takashi Mori, Hideaki Tsuchiya
- Journal Title
  
  Phys. Stat. Sol. (c) 第5巻・第9号
  
  Pages: 3153-3155
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Influence of Elastic and Inelastic Phonon Scattering on the Drive Current of Quasi-Ballistic MOSFETs2008
- Author(s)
  H.Tsuchiya and S.Takagi
- Journal Title
  
  IEEE Trans. On Electron Devices Vol.55, No.9
  
  Pages: 2397-2402
- NAID
  120001460048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] 準バリスティックMOSFETにおける弾性散乱および非弾性散乱の役割2007
- Author(s)
  土屋英昭
- Journal Title
  
  第54回応用物理学関係連合講演会
  
  Pages: 936-936
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs2007
- Author(s)
  Hideaki Tsuchiya and Shin-ichi Takagi
- Journal Title
  
  Extended Abstracts of Int'l Conf. on Solid State Devices and Materials(SSDM07)
  
  Pages: 44-45
- NAID
  10022548068
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Influences of Lateral Quantum Confinement on Carrier Transport in Nanoscale Double-Gate MOSFETs2007
- Author(s)
  Kazuya Fujii, Kyosuke Okuda, Hideaki Tsuchiya, and Tanroku Miyoshi
- Journal Title
  
  Abstracts of 2007 Silicon Nanoelectronics Workshop
  
  Pages: 141-142
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] On the Performance Limits of Emerging Nano-MOS Transistors: A Simulation Study2007
- Author(s)
  Hideaki Tsuchiya, Kazuya Fujii, Takashi Mori, Yusuke Azuma, Kyosuke Okuda, and Tanroku Miyoshi
- Journal Title
  
  Proceedings of 2007 7th IEEE Int'l Conf. on Nanotechnology(IEEE-NANO2007)
  
  Pages: 530-535
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] Drive Current of Ultrathin Ge-on-Insulator n-Channel MOSFETs2007
- Author(s)
  Yusuke Azuma, Takashi Mori, and Hideaki Tsuchiya
- Journal Title
  
  Abstracts of 34th Int'1 Symp. on Compound Semiconductors
  
  Pages: 131-131
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs2006
- Author(s)
  H.Tsuchiya
- Journal Title
  
  IEEE Trans. on Elecron Devices 53・12
  
  Pages: 2965-2971
- NAID
  120000946373
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] A Picture of Quasi-Ballistic Transport in Nanoscale MOSFETs2006
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  Extended Abstracts of Int'l Conf. on Solid State Devices and Materials (SSDM06)
  
  Pages: 350-351
- NAID
  10022545338
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] ナノスケールMOSFETのバリスティック輸送特性2006
- Author(s)
  土屋英昭
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー No.84
  
  Pages: 77-82
- NAID
  110004823562
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs2006
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  IEEE Trans. on Electron Devices Vol. 53,No. 12
  
  Pages: 2965-2971
- NAID
  120000946373
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs2006
- Author(s)
  H.Tsuchiya, K.Fujii, T.Mori, T.Miyoshi
- Journal Title
  
  IEEE Trans. on Elecron Devices 53
  
  Pages: 2965-2971
- NAID
  120000946373
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] A Picture of Quasi-Ballistic Transport in Nanoscale MOSFETs2006
- Author(s)
  H.Tsuchiya
- Journal Title
  
  Proc. Int. Conf. Solid State Devices and Materials (SSDM2006)
- NAID
  10022545338
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs2006
- Author(s)
  H. Tsuchiya, K. Fujii, T. Mori, T. Miyoshi
- Journal Title
  
  IEEE Trans. on Electron Devices Vol.53,No.12
  
  Pages: 2965-2971
- NAID
  120000946373
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs, IEEE Trans2006
- Author(s)
  H.Tsuchiya, K.Fujii, T.Mori and T.Miyoshi
- Journal Title
  
  on Electron Devices, Vol.53, No.12,
  
  Pages: 2965-2971
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] A Picture of Quasi-Ballistic Transport in Nanoscale MOSFETs2006
- Author(s)
  H.Tsuchiya, K.Fujii, T.Mori, T.Miyoshi
- Journal Title
  
  Proc. Int. Conf. Solid State Devices and Materials (SSDM2006)
- NAID
  10022545338
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] 量子補正モンテカルロ法によるナノMOSシミュレーション2006
- Author(s)
  土屋英昭
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー No.86
  
  Pages: 22-27
- Data Source
  KAKENHI-PROJECT-18560334
[Journal Article] A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs2006
- Author(s)
  H.Tsuchiya
- Journal Title
  
  IEEE Trans. on Elecron Devices 53
  
  Pages: 2965-2971
- NAID
  120000946373
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation2005
- Author(s)
  H.Tsuchiya
- Journal Title
  
  Computational Electronics, 4
  
  Pages: 35-38
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors2005
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  Japanese Journal of Applied Physics 44(11)
  
  Pages: 7820-7826
- NAID
  10016870571
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] 擬似バリスティック輸送下におけるMOSFETの電流駆動力-電子電子散乱の影響-2005
- Author(s)
  土屋英昭
- Journal Title
  
  第52回応用物理学関係連合講演会
  
  Pages: 978-978
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide- Semiconductor Field-Effect Transistors2005
- Author(s)
  H.Tsuchiya, A.Oda, M.Ogawa, T.Miyoshi
- Journal Title
  
  Jpn. J. Appl. Phys. 44
  
  Pages: 7820-7826
- NAID
  10016870571
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors2005
- Author(s)
  H.Tsuchiya
- Journal Title
  
  Jpn. J. Appl. Phys. 44
  
  Pages: 7820-7826
- NAID
  10016870571
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors2005
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44, No.11
  
  Pages: 7820-7826
- NAID
  10016870571
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] ナノスケールMOSFETの電流駆動力に関するキャリア散乱の影響2005
- Author(s)
  土屋英昭
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー No.74
  
  Pages: 55-60
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation2005
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  Journal of Computational Electronics 4(1-2)
  
  Pages: 35-38
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Carrier Scattering Limited Drive Current in Nano-Scaled MOSFETs2005
- Author(s)
  Hideaki, Tsuchiya
- Journal Title
  
  Silicon Technology, The Japan Society of Applied Physics 74
  
  Pages: 55-60
- NAID
  110003311502
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors2005
- Author(s)
  H.Tsuchiya
- Journal Title
  
  Jpn.J.Appl.Phys. 44
  
  Pages: 7820-7826
- NAID
  10016870571
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] A First Principles Study on Electronic Band Structures of Nano-Scaled SOI Films2005
- Author(s)
  Y.Teratani, T.Ando, H.Tsuchiya, T.Miyoshi
- Journal Title
  
  Proc. Int. Conf. Solid State Devices and Materials (SSDM2005)
- NAID
  10022541654
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation2005
- Author(s)
  H.Tsuchiya
- Journal Title
  
  J. Computational Electronics 4
  
  Pages: 35-38
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] 量子補正モンテカルロ・分子動力学法による速度飽和の電子濃度依存性解析2005
- Author(s)
  土屋英昭
- Journal Title
  
  第52回応用物理学関係連合講演会
  
  Pages: 19-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] ナノスケールMOSFETにおけるキャリア散乱効果2005
- Author(s)
  土屋英昭
- Journal Title
  
  第66回応用物理学会学術講演会
  
  Pages: 750-750
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] ナノスケールMOSFETの電流雑音特性(2)2005
- Author(s)
  土屋英昭
- Journal Title
  
  第52回応用物理学関係連合講演会
  
  Pages: 1000-1000
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors2005
- Author(s)
  Hideaki, Tsuchiya
- Journal Title
  
  Japanese Journal of Applied Physics 44(11)
  
  Pages: 7820-7826
- NAID
  10016870571
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation2005
- Author(s)
  Hideaki, Tsuchiya
- Journal Title
  
  Journal of Computational Electronics 4(1-2)
  
  Pages: 35-38
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] ナノスケールMOSFETの電流駆動力に関するキャリア散乱の影響2005
- Author(s)
  土屋英昭
- Journal Title
  
  応用物理学分科会シリコンテクノロジー No. 74
  
  Pages: 55-60
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation2005
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  Journal of Computational Electronics Vol.4, No.1-2
  
  Pages: 35-38
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation2005
- Author(s)
  H.Tsuchiya, A.Svizhenko, M.P.Anantram, M.Ogawa, T.Miyoshi
- Journal Title
  
  J. Computational Electronics 4
  
  Pages: 35-38
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560308
[Journal Article] ナノスケールMOSFETにおけるキャリア散乱効果2005
- Author(s)
  土屋英昭
- Journal Title
  
  第66回応用物理学学術講演会
  
  Pages: 750-750
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Current Noise in Semiconductor nanoscale Devices, Second Int.Symposium on Fluctuations and Noise2004
- Author(s)
  T.Miyoshi, H.Tsuchiya, M.Ogawa, A.Asanuma
- Journal Title
  
  Proceedings of SPIE, Noise in Devices and Circuits II Vol.5470-03
  
  Pages: 28-36
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Journal Article] 擬似バリスティック輸送したにおけるMOSFETの電流駆動力2004
- Author(s)
  土屋英昭
- Journal Title
  
  第65回応用物理学会学術講演会講演予稿集
  
  Pages: 769-769
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] ナノスケールDG-MOSFETの擬似バリスティック量子輸送特性2004
- Author(s)
  土屋英昭
- Journal Title
  
  応用物理学会分科会 No. 65
  
  Pages: 85-90
- NAID
  110003309295
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] ナノMOSトランジスタのバリスティック極限性能2004
- Author(s)
  土屋英昭
- Journal Title
  
  第51回応用物理学関係連合講演会
  
  Pages: 973-973
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quasi-Ballistic Quantum Transport of Nano-Scale DG-MOSFETs2004
- Author(s)
  Hideaki, Tsuchiya
- Journal Title
  
  Silicon Technology, The Japan Society of Applied Physics 65
  
  Pages: 85-90
- NAID
  110003309295
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation2004
- Author(s)
  H.Tsuchiya, A.Svizhenko, M.P.Anantram, M.Ogawa, T.Miyoshi
- Journal Title
  
  Int.Workshop on Computational Electronics (IWCE-10)
  
  Pages: 93-94
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Journal Article] Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation2004
- Author(s)
  H.Tsuchiya
- Journal Title
  
  Int.Workshop on Computational Electronics (IWCE-10)
  
  Pages: 93-94
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Journal Article] 擬似バリスティック輸送下におけるMOSFETの電流駆動力2004
- Author(s)
  土屋英昭
- Journal Title
  
  第65回応用物理学会学術講演会講演予稿集
  
  Pages: 769-769
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation2004
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  Proc.10th Int.Workshop on Computational Electronics (IWCE10)
  
  Pages: 93-94
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] ナノスケールDG-MOSFETの擬似バリスティック量子輸送特性2004
- Author(s)
  土屋英昭
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー 65巻
  
  Pages: 85-90
- NAID
  110003309295
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] ナノMOSシミュレーションにおける非平衡グリーン関数法と量子モンテカルロ法の比較2004
- Author(s)
  土屋英昭
- Journal Title
  
  第51回応用物理学関係連合講演会
  
  Pages: 39-39
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum Transport Modeling of Nano-Scaled MOSFETs2003
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  Proc. of 2003 Int. Meeting for Future of Electron Devices, Kansai (2003 IMFEDK)
  
  Pages: 57-58
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] サブ10nm MOSFETの準バリスティック量子輸送特性2003
- Author(s)
  土屋英昭
- Journal Title
  
  第64回応用物理学会学術講演会
  
  Pages: 798-798
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors2003
- Author(s)
  Hideaki, Tsuchiya
- Journal Title
  
  Japanese Journal of Applied Physics 42(12)
  
  Pages: 7238-7243
- NAID
  10011839858
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum Electron Transport Modeling in Nano-Scale Devices2003
- Author(s)
  M.Ogawa, H.Tsuchiya, T.Miyoshi
- Journal Title
  
  IEICE Trans.Electron. Vol. E86-C, No. 3
  
  Pages: 363-371
- NAID
  110003214614
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Journal Article] Quantum Transport Modeling of Nano-Scaled MOSFETs2003
- Author(s)
  H.Tsuchiya, M.Horino, M.Ogawa, T.Miyoshi
- Journal Title
  
  2003 Int.Meeting for Future of Electron Devices, Kansai (2003IMFEDK)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Journal Article] Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors2003
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  Japanese Journal of Applied Physics 42(12)
  
  Pages: 7238-7243
- NAID
  10011839858
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs2003
- Author(s)
  Hideaki, Tsuchiya
- Journal Title
  
  Journal of Computational Electronics 2(2-4)
  
  Pages: 91-95
- NAID
  120000940919
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors2003
- Author(s)
  H.Tsuchiya
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42
  
  Pages: 7238-7243
- NAID
  10011839858
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Journal Article] 準バリスティックMOSFETのゲートオーバーラップ効果2003
- Author(s)
  土屋英昭
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー No. 55
  
  Pages: 14-19
- NAID
  110003308652
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum Monte Carlo Device Simulation on Nano-Scaled SOl-MOSFETs2003
- Author(s)
  H.Tsuchiya, M.Horino, T.Miyoshi
- Journal Title
  
  J.of Computational Electronics 2
  
  Pages: 91-95
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Journal Article] Quantum Transport Modeling of Nano-Scaled MOSFETs2003
- Author(s)
  Hideaki, Tsuchiya
- Journal Title
  
  Proc.of 2003 Int.Meeting for Future of Electron Devices, Kansai(2003 IMFEDK)
  
  Pages: 57-58
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum Monte Carlo Device Simulation on Nano-Scaled SOI-MOSFETs2003
- Author(s)
  H.Tsuchiya
- Journal Title
  
  J.of Computational Electronics 2
  
  Pages: 91-95
- NAID
  120000940919
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Journal Article] Gate Electrode Overlap Effects in Quasi-Ballistic MOSFETs2003
- Author(s)
  Hideaki, Tsuchiya
- Journal Title
  
  Silicon Technology, The Japan Society of Applied Physics 55
  
  Pages: 14-19
- NAID
  110003308652
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs2003
- Author(s)
  Hideaki Tsuchiya
- Journal Title
  
  Journal of Computational Electronics 2(2-4)
  
  Pages: 91-95
- NAID
  120000940919
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560295
[Journal Article] Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors2003
- Author(s)
  H.Tsuchiya, M.Horino, M.Ogawa, T.Miyoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, Part 1, No.12
  
  Pages: 7238-7243
- NAID
  10011839858
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Journal Article] Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs2003
- Author(s)
  H.Tsuchiya, M.Horino, T.Miyoshi
- Journal Title
  
  Int.Workshop on Computational Electronics (IWCE-9)
- NAID
  120000940919
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560296
[Presentation] シリケイン及びゲルマナンをチャネルとするCMOSトランジスタのバリスティック性能解析2016
- Author(s)
  兼古志郎、岡直左，土屋英昭，小川真人
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都目黒区)
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15K05985
[Presentation] 絶縁基板上グラフェンの高電界電子輸送特性2015
- Author(s)
  平井秀樹，土屋英昭，小川真人
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県名古屋市)
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-15K05985
[Presentation] 絶縁基板上グラフェンの電子移動度解析2014
- Author(s)
  平井秀樹，土屋英昭，鎌倉良成，森伸也，小川真人
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（札幌市）
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] モンテカルロ法を用いたSiダブルゲート構造MOSFETの準バリスティック輸送係数の抽出2014
- Author(s)
  土屋英昭，石田良馬，鎌倉良成，森伸也，宇野重康，小川真人
- Organizer
  電子情報通信学会シリコン材料・デバイス
- Place of Presentation
  機械振興会館（東京都港区）
- Year and Date
  2014-11-07
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] 原子論的アプローチに基づくGeナノワイヤの電子移動度解析2014
- Author(s)
  下井田健太，森規泰，土屋英昭，鎌倉良成，森伸也，宇野重康，小川真人
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] 単原子層Geナノリボンの電子移動度解析2014
- Author(s)
  森規泰，下井田健太，土屋英昭，鎌倉良成，森伸也，小川真人
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（札幌市）
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] ジャンクションレストランジスタの表面ラフネス散乱及び不純物散乱の影響2014
- Author(s)
  一居雅人，土屋英昭，鎌倉良成，森伸也，小川真人
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（札幌市）
- Year and Date
  2014-09-17
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] シリセン／ゲルマネン／グラフェンナノリボンFETのバリスティック性能評価2014
- Author(s)
  兼古志郎，長谷川直実，土屋英昭，鎌倉良成，森伸也，小川真人
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] シリセン／ゲルマネン／グラフェンFETの電子輸送モデリング2014
- Author(s)
  土屋英昭，兼古志郎，平井秀樹，森規泰
- Organizer
  応用物理学会分科会シリコンテクノロジー
- Place of Presentation
  機械振興会館（東京都港区）
- Year and Date
  2014-07-04
- Invited
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Performance projections of III-V channel nanowire nMOSFETs in the ballistic transport limit2013
- Author(s)
  Kenta Shimoida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa
- Organizer
  International Conf. on Solid State Devices and Materials
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] ウィグナーモンテカルロ法を用いた極微細III-V MOSFETの量子輸送解析2013
- Author(s)
  大森正規，木場隼介，前川容佑，土屋英昭，鎌倉良成，森伸也，小川真人
- Organizer
  応用物理学会分科会シリコンテクノロジー
- Place of Presentation
  機械振興会館
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Performance comparison of graphene nanoribbon, Si nanowire and InAs nanowire FETs in the ballistic transport limit2013
- Author(s)
  Naomi Hasegawa, Kenta Shimoida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa
- Organizer
  International Conf. on Solid State Devices and Materials
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] ソースドレイン直接トンネリングによるIII-V MOSFETの短チャネル化限界2013
- Author(s)
  大森正規，木場隼介，前川容佑，土屋英昭，鎌倉良成，森伸也，小川真人
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] MOS界面における変位ポテンシャル上昇が超薄膜チャネルMOSFETのドレイン電流に与える影響2013
- Author(s)
  木場隼介，石田良馬，久保田結子，土屋英昭，鎌倉良成，森伸也，小川真人
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] The impact of increased deformation potential at MOS interface on quasi-ballistic transport in ultrathin channel MOSFETs scaled down to sub-10nm channel length2013
- Author(s)
  Shunsuke Koba, Ryoma Ishida, Yuko Kubota, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, and Matsuto Ogawa
- Organizer
  International Electron Devices Meeting
- Place of Presentation
  Washington, DC
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] 短チャネルSi MOSFETの準バリスティック輸送パラメータの抽出2013
- Author(s)
  石田良馬，木場隼介，土屋英昭，鎌倉良成，森伸也，小川真人
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] バリスティック輸送下でのグラフェンナノリボンFETの性能評価2013
- Author(s)
  長谷川直実，下井田健太，土屋英昭，鎌倉良成，森伸也，小川真人
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Electronic band structures of graphene nanomeshes2012
- Author(s)
  R. Sako, N. Hasegawa, H. Tsuchiya, M. Ogawa
- Organizer
  2012 Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Junctionlessトランジスタの高濃度チャネルドーピングの影響に関する考察2012
- Author(s)
  長井克之，土屋英昭，小川真人
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] グラフェンナノメッシュによるバンド構造エンジニアリング2012
- Author(s)
  迫龍太郎，長谷川直実，土屋英昭，小川真人
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] 半導体的グラフェンのバリスティック電子輸送特性2012
- Author(s)
  土屋英昭，細川博司，迫龍太郎，長谷川直実，小川真人
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学（東京都）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] 多重接合されたグラフェンナノリボンの電子伝導2012
- Author(s)
  長谷川直実，迫龍太郎，土屋英昭，小川真人
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学（東京都）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] A comparative study on drive currents and consumption powers of Si and InAs nanowire MOSFETs based on atomistic ballistic simulation2012
- Author(s)
  K. Shimoida, Y. Yamada, R. Sako, H. Tsuchiya, M. Ogawa
- Organizer
  Eighth Int’l Nanotechnology Conference on communication and cooperation (INC8)
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Monte Carlo study on the role of high channel doping in junctionless transistors2012
- Author(s)
  K. Nagai, S. Koba, H. Tsuchiya, M. Ogawa
- Organizer
  Int’l Conf. on Solid State Devices and Materials (SSDM12)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] 短チャネルIII-V MOSFETの量子輸送効果2012
- Author(s)
  前川容佑，木場隼介，土屋英昭，小川真人
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Quantum transport simulation of III-V MOSFETs based on Wigner Monte Carlo approach2012
- Author(s)
  Y. Maegawa, S. Koba, H. Tsuchiya, M. Ogawa
- Organizer
  2012 Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Siナノワイヤ及びInAsナノワイヤMOSFETのワイヤ方向依存性能の比較2012
- Author(s)
  下井田健太，山田吉宏，土屋英昭，小川真人
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Wire-orientation dependence in device performances of Si and InAs nanowire MOSFETs under ballistic transport2012
- Author(s)
  K. Shimoida, Y. Yamada, H. Tsuchiya, M. Ogawa
- Organizer
  Int’l Conf. on Solid State Devices and Materials (SSDM12)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] バリスティックInAsナノワイヤFETのワイヤ方向依存性2012
- Author(s)
  滝口直也，下井田健太，土屋英昭，小川真人
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学（東京都）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Band structure and electron transport in multi-junction graphene nanoribbons2012
- Author(s)
  N. Hasegawa, R. Sako, H. Tsuchiya, M. Ogawa
- Organizer
  2012 Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Wigner Monte Carlo approach to quantum and dissipative transport in Si-MOSFETs2011
- Author(s)
  Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa
- Organizer
  2011 International Conference on Simulation of Semiconductor Processes and Devices
- Place of Presentation
  ホテル阪急エキスポパーク（吹田市）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Electron mobility calculations of free-standing Si-nanowires with atomistic electron-phonon interactions2011
- Author(s)
  Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa
- Organizer
  2011 International Conf. on Solid State Devices and Materials
- Place of Presentation
  愛知産業労働センター（名古屋市）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] バンドギャップ開口がグラフェンFETのバリスティック性能に及ぼす影響2011
- Author(s)
  迫龍太郎，土屋英昭，小川真人
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学（山形市）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] SiナノワイヤFETとInAsナノワイヤFETの極限性能比較2011
- Author(s)
  滝口直也，澤本俊，土屋英昭，小川真人
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学（山形市）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Simulation of electron transport in source and drain electrodes of ultrathin body III-V channel MOSFETs2011
- Author(s)
  Yosuke Maegawa, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa
- Organizer
  2011 International Conf. on Solid State Devices and Materials
- Place of Presentation
  愛知産業労働センター（名古屋市）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] ウィグナーモンテカルロ法に基づくMOSFETの新型量子輸送シミュレータの実現2011
- Author(s)
  木場隼介，土屋英昭，小川真人
- Organizer
  応用物理学会分科会シリコンテクノロジー(招待講演)
- Place of Presentation
  大阪大学サイバーメディアセンター（吹田市）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] 第一原理バンド計算を援用したSiナノワイヤ及びInAsナノワイヤFETとバリスティック性能比較2011
- Author(s)
  滝口直也，木場隼介，土屋英昭，小川真人
- Organizer
  応用物理学会分科会シリコンテクノロジー
- Place of Presentation
  機械振興会館（東京都）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] 原子論的電子－フォノン相互作用モデリングによるSiナノワイヤの電子移動度解析2011
- Author(s)
  山田吉宏，土屋英昭，小川真人
- Organizer
  応用物理学会分科会シリコンテクノロジー(招待講演)
- Place of Presentation
  大阪大学サイバーメディアセンター（吹田市）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Performance projections of ballistic graphene FETs with bilayer graphene and graphene nanoribbon semiconducting channels2011
- Author(s)
  Ryutaro Sako, Hideaki Tsuchiya, Matsuto Ogawa
- Organizer
  2011 Silicon Nanoelectronics Workshop
- Place of Presentation
  京都リーガロイヤルホテル（京都市）
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] ナノスケールデバイスのウィグナーモンテカルロシミュレーション2010
- Author(s)
  木場隼介, 青柳良, 前中章宏, 王威, 土屋英昭, 小川真人
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 第一原理バリスティックシミュレーションによるSiナノワイヤトランジスタの性能予測2009
- Author(s)
  澤本俊, 前川忠史, 原孟史, 土屋英昭, 小川真人
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 高移勁度チャネルMOSFETの電流駆動力シミュレーション2009
- Author(s)
  前中章宏, 松浦慎一郎, 土屋英昭, 小川真人
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Performance Projection of III-V and Ge channel MOSFETs(invited)2009
- Author(s)
  Hideaki Tsuchiya, Akihiro Maenaka, Takashi Mori, Ynsuke Azuma
- Organizer
  Int'l Conf. on Solid State Devices and Materials(SSDM09)
- Place of Presentation
  仙台
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] バリスティック輸送がSi-MOSFETのオフ電流に与える影響2009
- Author(s)
  山田吉宏, 土屋英昭, 小川真人
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Performance Comparisons of Ballistic Silicon-Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects2009
- Author(s)
  Haruki Ando, Shun Sawamoto, Tadashi Maegawa, Takeshi Hara, Hironobu Yao, Hideaki Tsuchiya, Matsuto Ogawa
- Organizer
  Int'l Conf. on Solid State Devices and Materials(SSDM09)
- Place of Presentation
  仙台国際ホテル(宮城県)
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 高移動度チャネルMOS トランジスタの性能予測シミュレ-ション(招待講演)2009
- Author(s)
  土屋英昭, 前中章宏, 森隆志, 東祐介
- Organizer
  応用物理学会ゲ-トスタック研究会-材料・プロセス・評価の物理-
- Year and Date
  2009-01-23
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] ショットキーS/D MOSFETの高バリスティック輸送効率2009
- Author(s)
  王威, 土屋英昭, 小川真人
- Organizer
  第56回応用物理学関係辿合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 第一原理バリスティックシミュレーションによるグラフェントランジスタの性能予測2009
- Author(s)
  安藤晴気, 澤本俊, 前川忠史, 土屋英昭, 小川真人
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Performance Projection of III-V and Ge channel MOSFETs (invited)2009
- Author(s)
  H. Tsuchiya, A. Maenaka, T. Mori, Y. Azuma
- Organizer
  Extended Abstracts of Int'l Conf. on Solid State Devices and Materials (SSDM09)
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 第一原理バリスティックシミュレーションによるグラフェントランジスタの性能予測2009
- Author(s)
  安藤晴気, 澤本俊, 前川忠史, 土屋英昭, 小川真人
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 第一原理バリスティックシミュレーションによるSiナノワイヤトランジスタの性能予測2009
- Author(s)
  澤本俊, 前川忠史, 原孟史, 土屋英昭, 小川真人
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Performance Comparisons of Ballistic Silicon-Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects2009
- Author(s)
  H. Ando, S. Sawamoto, T. Maegawa, T. Hara, H. Yao, H. Tsuchiya, M. Ogawa
- Organizer
  Extended Abstracts of Int'l Conf. on Solid State Devices and Materials (SSDM09)
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 高移動度チャネルMOSトランジスタの性能予測シミュレーション2009
- Author(s)
  土屋英昭, 前中章宏, 森隆志, 東祐介
- Organizer
  応用物理学会ゲートスタック研究会-材料・プロセス・評価の物理-
- Year and Date
  2009-01-23
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 第一原理計算によるひずみシリコンナノ構造チャネルの電子状態解析2008
- Author(s)
  前川忠史, 山内恒毅, 原孟史, 土屋英昭, 小川真人
- Organizer
  応用物理学会分科会シリコンテクノロジ-
- Place of Presentation
  機械振興会館(東京)
- Year and Date
  2008-11-14
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 第一原理計算によるひずみシリコンナノ構造チャネルの電子状態解析2008
- Author(s)
  前川忠史, 山内恒毅, 原孟史, 土屋英昭, 小川真人
- Organizer
  応川物理学会分科会シリコンテクノロジー
- Place of Presentation
  機械振興会館(東京)
- Year and Date
  2008-11-14
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] シリコンナノワイヤトランジスタの三次元量子輸送シミュレーション2008
- Author(s)
  山田吉宏, 土屋英昭, 小川真人
- Organizer
  応用物理学会分科会シリコンテクノロジー
- Place of Presentation
  機械振興会館(東京)
- Year and Date
  2008-11-14
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] バリスティック効率向上のためのソース端ポテンシャルエンジニアリング2008
- Author(s)
  土屋英昭, 王威, 高木信一
- Organizer
  第69回応川物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] シリコンナノワイヤトランジスタの三次元量子輸送シミュレ-ション2008
- Author(s)
  山田吉宏, 土屋英昭, 小川真人,
- Organizer
  応用物理学会分科会シリコンテクノロジ-
- Place of Presentation
  機械振興会館(東京)
- Year and Date
  2008-11-14
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] ウィグナー関数モデルによるSiナノワイヤFETの3次元量子輸送シミュレーション2008
- Author(s)
  山田吉宏, 土屋英昭
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors Based on Wigner Function Model2008
- Author(s)
  Y. Yamada, H. Tsuchiya
- Organizer
  Extended Abstracts of the 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
- Place of Presentation
  Hakone
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 第一原理計算によるひずみシリコンナノ構造チャネルの電子状態解析2008
- Author(s)
  前川忠史, 山内恒毅, 原孟史, 土屋英昭, 小川真人
- Organizer
  応用物理学会分科会シリコンテクノロジー
- Place of Presentation
  機械振興会館(東京)
- Year and Date
  2008-11-14
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Three-Dimensional Quantum TransportSimulation of Si-Nanowire Transistors Basedon Wigner Function Model2008
- Author(s)
  Y.Yamada and H.Tsuchiya
- Organizer
  Extended Abstracts of the 2008 International Conferenceon Simulation of Semiconductor Processes and Devices (SISPAD)
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Si及び非Si材料MOSFETの準バリスティック動作特性2007
- Author(s)
  土屋英昭, 森隆志, 東祐介
- Organizer
  More Moore, More Than Mooreにおける化合物半導体電子デバイス調査専門委員会(電気学会)
- Place of Presentation
  法政大学
- Year and Date
  2007-11-27
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 量子補正モンテカルロシミュレーションによる非Si材料nチャネルMOSFETの電流駆動力評価2007
- Author(s)
  森隆志, 東祐介, 土屋英昭
- Organizer
  応用物理学会分科会シリコンテクノロジー
- Place of Presentation
  機械振興会館(東京)
- Year and Date
  2007-10-30
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] On the Performance Limits of Emerging Nano-MOS Transistors : ASimulation Study (invited)2007
- Author(s)
  H.Tsuchiya, K.Fujii, T.Mori, Y.Azuma, K.Okuda and T.Miyoshi
- Organizer
  Proceedings of 2007 7th IEEE Int'l Conf. on Nanotechnology (IEEE-NANO2007)
- Place of Presentation
  Hong Kong
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] On the Performance Limits of Emerging Nano-MOS Transistors: A Simulation Study (invited)2007
- Author(s)
  H. Tsuchiya, K. Fujii, T. Mori, Y. Azuma, K. Okuda, T. Miyoshi
- Organizer
  Proceedings of 2007 7th IEEE Int'l Conf. on Nanotechnology (IEEE-NANO2007)
- Place of Presentation
  Hong Kong
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] 極薄Ge-on-Insulator(GOI)n-チャネルMOSFETの電流駆動力2007
- Author(s)
  東祐介, 森隆志, 土屋英昭
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs2007
- Author(s)
  H. Tsuchiya, S. Takagi
- Organizer
  Extended Abstracts of Int'l Conf. on Solid State Devices and Materials (SSDM07)
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs2007
- Author(s)
  H.Tsuchiya and S.Takagi
- Organizer
  Extended Abstracts of Int'l Conf. on Solid State Devices and Materials (SSDM07)
- Data Source
  KAKENHI-PROJECT-18560334
[Presentation] Understanding Carrier Transport in the Ultimate Physical Scaling Limit of MOSFETs
- Author(s)
  Hideaki Tsuchiya
- Organizer
  The 2014 Int. Meeting for Future of Electron Devices, Kansai (2014 IMFEDK)
- Place of Presentation
  龍谷大学アバンティ京都ホール（京都市）
- Year and Date
  2014-06-19 – 2014-06-20
- Invited
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Extraction of Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Based on Monte Carlo Method
- Author(s)
  Ryoma Ishida, Shunsuke Koba, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Shigeyasu Uno, and Matsuto Ogawa
- Organizer
  The 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2014)
- Place of Presentation
  メルパルク横浜（横浜市）
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-23560395
[Presentation] Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Small FETs
- Author(s)
  Yoshinari Kamakura, Indra Nur Adisusilo, Kentaro Kukita, Go Wakimura, Shunsuke Koba, Hideaki Tsuchiya, and Nobuya Mori
- Organizer
  International Electron Devices Meeting (IEDM2014)
- Place of Presentation
  サンフランシスコ（アメリカ合衆国）
- Year and Date
  2014-12-15 – 2014-12-17
- Data Source
  KAKENHI-PROJECT-23560395

1. MIYOSHI Tanroku (20031114)

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results

TSUCHIYA Hideaki 土屋 英昭

土屋 英昭 ツチヤ ヒデアキ

Research Projects

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Co-Researchers

2次元単原子層材料を用いた集積デバイスの性能予測Principal Investigator

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Research on green nanodevices toward the realization of ultra-low power LSIPrincipal Investigator

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Quasi-ballistic transport modeling of emerging MOSFETs with new channel materials and new device architecturesPrincipal Investigator

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Quantum mechanical simulation of current noise of nanoscale double-gate MOSFETs

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Research of quantum transport in silicon integrated devicesPrincipal Investigator

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Research of current fluctuations of nanoscaled MOSFETs based upon quantum transport models

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ナノ構造デバイスシミュレーションにおける量子補正多粒子モンテカルロ法に関する研究Principal Investigator

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電子波デバイスの動的量子輸送モデルに関する研究Principal Investigator

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[Book] ナノ構造エレクトロニクス入門2013

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[Book] 量子物理2012

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[Book] ナノエレクトロニクスの基礎2007

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[Book] ナノエレクトロニクスの基礎2007

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[Journal Article] Simulation of Electron Transport in Atomic Monolayer Semiconductor FETs2015

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NAID

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[Journal Article] Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors2015

Author(s)

TSUCHIYA Hideaki 土屋英昭

土屋英昭ツチヤヒデアキ