TSUCHIYA Yoshishige 土屋良重

Researcher Number	80334506
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2009: サザンプトン大学, 電子情報研究科, 講師 2008: 東工大, 助教 2007: Tokyo Institute of Technology, 量子ナノエレクトロニクス研究センター, 助教 2003 – 2006: Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, Assistant Professor, 量子ナノエレクトロニクス研究センター, 助手 2001 – 2003: Tokyo Institute of Technology, Research Center for Quantum Effect Electronics, Research Associate, 量子効果エレクトロニクス研究センター, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Principal Investigator MOCVD / 原子層MOCVD / 分光エリプソメトリ / 成長その場観察 / 高誘電率材料 / 高速不揮発メモリ / 絶縁膜積層構造 / Hf酸化物系材料 / Pr酸化物系材料 / 高誘電率ゲート絶縁膜 … More / 製膜その場観察 / Hf酸化物 / 第一原理計算 / Prシリケート / 角度分解光電子分光 / 不揮発性メモリ / シリコン / 2重浮遊ゲート / マルチスタック / 高誘電率酸化膜 / Pr系材料 / シミュレーション … More Except Principal Investigator ナノ結晶シリコン / 量子情報デバイス / 分散溶液 / 微小電荷検出 / LB膜法 / 2重nc-Si量子ドット / RF-SET / 単電子トンネル / nanocrystalline silicon / nano-technology / ナノシリコンインク / ディップコーティング / 多重結合量子ドット / スピンブロッケード / ディップコーティング法 / 3重nc-Si量子ドット / パルスプラズマプロセス / シリコン表面 / 微細加工プロセス / 量子ドット相関 / 単電子メモリ / バリスティック伝導 / pulsed plasma processing / interface / single electron tunneling / single electron memory / ballistic transport / surface electron emitter / プラズマCVD / 量子ドット / ストレス下の酸化 / 透過型電子顕微鏡観察 / フォトルミネッセンス / リンガラス低温融解 / 電子放出素子 / 酸化 / 単電子トランジスタ / 自己停止機構 / self-limiting oxidation / luminescence / stress effect / no phonon assisted / quasi-direct transition / planerization / 原子層MOCVD / 分光エリプソメトリ / 高誘電率ゲート絶縁膜 / 薄膜堆積その場観察 / 第一原理計算 / 光学的誘電率 / Prシリケート / 角度分解XPS / 高誘電率ゲート酸化膜 / MOSFET / チャネル移動度 / ゲートリーク電流 / パルス原料供給 / Atomic layer-by-layer MOCVD / Spectroscopic Ellipsometry / High-k dielectrics / In situ monitoring of film growth / First principle calculation / Optical dielectric constant / Pr silicate / Angle-resolved XPS / ドット集積化 / 横毛管力 / 2重シリコン量子ドット / メニスカス相互作用 / Nanocrystalline silicon / Nanodots integration / Dispersion solution / Langmuir-Blodgett (LB) technique / Quantum information device / Lateral capillary meniscus force / Double nc-Si dots charge qubit / Charge polarization detection Less

Integrated Assembly of NeoSilicon towards Quantum Information Devices
- Principal Investigator
  
  ODA Shunri
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
高速スイッチング可能な双安定状態を有するシリコン2重浮遊ゲートマルチスタック創製Principal Investigator
- Principal Investigator
  
  土屋良重
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
原子層MOCVDとエリプソメトリ成膜モニタを用いた極薄高誘電率ゲート絶縁膜の作製Principal Investigator
- Principal Investigator
  
  土屋良重
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Self-assembled integration technologies of silicon quantum dots toward future NeoSilicon quantum information devices
- Principal Investigator
  
  ODA Shunri
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Atomic scale control of high-k dielectric ultrathin film grown by atomic layer-by-layer MOCVD with using in situ spectroscopic ellipsometry monitoring
- Principal Investigator
  
  ODA Shunri
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Single Electron Devices Based on NeoSilicon Materials
- Principal Investigator
  
  ODA Shunri
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Control of Particle Size and Position of Nano-crystalline Silicon
- Principal Investigator
  
  ODA Shunri
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology

All 2010 2009 2008 2007 2006 2005 2004

All Journal Article Presentation

[Journal Article] Suspended quantum dot fabrication on a heavily-doped silicon nanowire by suppressi unintentional quantum dot formation2010
- Author(s)
  Jun Ogi, M.A.Ghiass, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, Shunri Oda, Hiroshi Mizuta
- Journal Title
  
  Japanese Journal of Applied Physics Vol.49(in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Experimental observation of enhanced electron-phonon interaction in suspended Sdouble quantum dots2010
- Author(s)
  Jun Ogi, T.Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, D.A.Williams, Shunri Oda
- Journal Title
  
  Japanese Journal of Applied Physics Vol.49(in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Control of Inter-dot Electrostatic Coupling in an Asymmetric Silicon Double Quantum Dot Operating at 4. 5 K2009
- Author(s)
  G. Yamahata, Y. Tsuchiya, H. Mizuta, K. Uchida, S. Oda
- Journal Title
  
  Appl. Phys. Express 2
  
  Pages: 95002-95002
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Electron transport through silicon serial triple quantum dots2009
- Author(s)
  Gento Yamahata, Yoshishige Tsuchiya, Hiroshi Mizuta, Ken Uchida, Shunri Oda
- Journal Title
  
  Solid State Electronics Vol.53
  
  Pages: 779-785
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure2009
- Author(s)
  M. Manoharan, Y. Tsuchiya, S. Oda, H. Mizuta
- Journal Title
  
  Journal of Applied Physics 106
  
  Pages: 44511-44511
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Size-Dependent Structural Characterization of Silicon Nanowires2008
- Author(s)
  Saeed Akhtar, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda
- Journal Title
  
  Japanese Journal of Applied Physics (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Influence of nanocrystal size on conduction mechanism across silicon nanocrystals2008
- Author(s)
  X. Zhou, K. Usami, M.A. Rafiq. H. Mizuta, Y. Tsuchiya, S. Oda
- Journal Title
  
  Journal of Applied Physics 104
  
  Pages: 24518-24518
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge2008
- Author(s)
  J. Ogi, Y. Tsuchiya, H. Mizuta, and S. Oda
- Journal Title
  
  Microelectronics Engineering (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures2008
- Author(s)
  A. Tanaka, Y. Tsuchiya, K. Usami, S. Saito, T. Arai, H. Mizuta, S. Oda
- Journal Title
  
  Japanese Journal of Applied Physics 47(6)
  
  Pages: 4820-4826
- NAID
  40016111036
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Field-dependant hopping conduction in silicon nanocrystal films2008
- Author(s)
  Y. Kawata, Y. Tsuchiya, S. Oda, H. Mizuta
- Journal Title
  
  Journal of Applied Physics 104
  
  Pages: 123710-123710
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Influence of nanocrystal size on conduction mechanism across silicon nanocrystals2008
- Author(s)
  Gento Yamahata, Yoshishige Tsuchiya Shunri Oda
- Journal Title
  
  Journal of Applied Physics 104
  
  Pages: 24518-24518
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Strongly coupled multiple-dot characteristics in dual recess structured silicon channel2008
- Author(s)
  M. Manoharan, Y. Kawata, Y. Tsuchiya, S.Oda and H. Mizuta
- Journal Title
  
  Journal of Applied Physics 103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Vapor-Liquid-Solid Growth of Small-and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H62008
- Author(s)
  Saeed Akhtar, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda
- Journal Title
  
  Applied Physics Express 1(1)
- NAID
  210000013903
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation2008
- Author(s)
  M. Manoharan, Y. Tsuchiya, S. Oda and H. Mizuta
- Journal Title
  
  Applied Physics Letters 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple gate single-electron transistor2007
- Author(s)
  Y.Kawata, M.Khalafalla, K.Usami, Y.Tsuchiya, H.Mizuta, S.Oda
- Journal Title
  
  Japanese Journal of Applied Physics 46(印刷中)
- NAID
  40015465565
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Three-dimensional numerical analysis of switching properties of high-speed and non-volatie nanoelectromechanical memory2007
- Author(s)
  Nagami, H. Mizuta, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada and S. Oda
- Journal Title
  
  IEEE Trans. Electron Devices 54(5)
  
  Pages: 1132-1139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory2007
- Author(s)
  T.Nagami, H.Mizuta, N.Momo, Y.Tsuchiya, S.Saito, T.Arai, T.Shimada, S.Oda
- Journal Title
  
  IEEE Transactions on Electron Devices 54・5
  
  Pages: 1132-1139
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] ntegration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple gate single-electron transistor2007
- Author(s)
  Y. Kawata, M. Khalafalla, K. Usami, Y. Tsuchiya, H. Mizuta and S. Oda
- Journal Title
  
  Japanese Journal of Applied Physics 46(7A)
  
  Pages: 4386-4389
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206035
[Journal Article] Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory2007
- Author(s)
  T.Nagami, H.Mizuta, N.Momo, Y.Tsuchiya, S.Saito, T.Arai, T.Shimada, S.Oda
- Journal Title
  
  IEEE Transactions on Electron Devices 54 (5)
  
  Pages: 1132-1139
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures2007
- Author(s)
  D.Hippo, K.Urakawa, Y.Kawata, Y.Tsuchiya, H.Mizuta, N.Koshida, S.Oda
- Journal Title
  
  Japanese Journal of Applied Physics 46・2
  
  Pages: 633-637
- NAID
  10018545174
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures2007
- Author(s)
  D.Hippo, K.Urakawa, Y.Kawata, Y.Tsuchiya, H.Mizuta, N Koshida, S.Oda
- Journal Title
  
  Japanese Journal of Applied Physics 46 (2)
  
  Pages: 633-637
- NAID
  10018545174
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple gate single-electron transistor2007
- Author(s)
  Y.Kawata, M.Khalafalla, K Usami, Y.Tsuchiya, H.Mizuta, S.Oda
- Journal Title
  
  Japanese Journal of Applied Physics 46(in press)
- NAID
  40015465565
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures,2007
- Author(s)
  D.Hippo, K.Urakawa, Y.Kawata, Y.Tsuchiya, H.Mizuta, N.Koshida, S.Oda
- Journal Title
  
  Jpn. J. Appl. Phys. 46(2)
  
  Pages: 633-637
- NAID
  10018545174
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Nano-electro-mechanical nonvolatile memory device incorporating nanocrystalline Si dots2006
- Author(s)
  Y.Tsuchiya, K Takai, N.Momo, T.Nagami, S.Yamaguchi, T.Shimada, H.Mizuta, S.Oda
- Journal Title
  
  Journal of Applied Physics 100
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Hopping conduction in size-controlled Si nanocrystals,2006
- Author(s)
  M.A.Rafiq, Y.Tsuchiya, H.Mizuta, S.Oda, S.Uno, Z.A.K.Darrani, W.I.Milne
- Journal Title
  
  J. Appl. Phys. Vol.100
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Hopping conduction in size-controlled Si nanocrystals2006
- Author(s)
  M.A.Rafiq, Y.Tsuchiya, H.Mizuta, S.Oda, S.Uno, Z.A.K.Durrani, W.I.Milne
- Journal Title
  
  Journal of Applied Physics 100
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Nano-electro-mechanical nonvolatile memory device incorporating nanocrystalline Si dot,2006
- Author(s)
  Y.Tsuchiya, K.Takai, N.Nomo, T.Nagami, S.Yamaguchi, T.Shimada, H.Mizuta, S.Oda
- Journal Title
  
  J. Appl. Phys. Vol.100
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] High-Density Assembly of Nanocrystalline Silicon Quantum Dots,2006
- Author(s)
  A.Tanaka, Y.Tsuchiya, K.Usami, H.Mizuta, S.Oda
- Journal Title
  
  Current Appl. Phys. Vol.6, No.3
  
  Pages: 344-347
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] High-Density Assembly of Nanocrystalline Silicon Quantum Dots2006
- Author(s)
  A.Tanaka, Y.Tsuchiya, K.Usami, H.Mizuta, S.Oda
- Journal Title
  
  Current Applied Physics 6・3
  
  Pages: 344-347
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] High-Density Assembly of Nanocrystalline Silicon Quantum' Dots2006
- Author(s)
  A.Tanaka, Y.Tsuchiya, K.Usami, H.Mizuta, S.Oda
- Journal Title
  
  Current Applied Physics 6 (3)
  
  Pages: 344-347
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Nano-electro-mechanical nonvolatile memory device incorporating nanocrystalline Si dots2006
- Author(s)
  Y.Tsuchiya, K.Takai, N.Momo, T.Nagami, S.Yamaguchi, T.Shimada, H.Mizuta, S.Oda
- Journal Title
  
  Journal of Applied Physics 100
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] In situ real-time spectroscopic ellipsometry study of HfO_2 thin films grown by using the pulsed-source MOCVD2005
- Author(s)
  Y.D.Zheng, H.Mizuta, Y.Tsuchiya, M.Endo, D.Sato, S.Oda
- Journal Title
  
  Journal of Applied Physics 97
  
  Pages: 23527-23527
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] High-Density Assembly of Nanocrystalline Silicon Quantum Dot2005
- Author(s)
  A.Tanaka, G.Yamahata, Y.Tsuchiya, K.Usami, H.Mizuta, S.Oda
- Journal Title
  
  Current Applied Physics (発表予定)(to be published)
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Charge injection and trapping in silicon nanocrystals2005
- Author(s)
  M.A.Rafiq, Y.Tsuchiya, H.Mizuta, S.Oda, S.Uno, Z.A.K.Durrani, W.I.Milne
- Journal Title
  
  Applied Physics Letters 87
  
  Pages: 182101-182101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source MOCVD2005
- Author(s)
  Y.D.Zheng, H.Mizuta, Y.Tsuchiya, M.Endo, D.Sato, S.Oda
- Journal Title
  
  Journal of Applied Physics 97
  
  Pages: 23527-23527
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode2005
- Author(s)
  Y.Tsuchiya et al.
- Journal Title
  
  Material Research Society Symposium Proceedings 832
- Data Source
  KAKENHI-PROJECT-16760247
[Journal Article] In situ real-time spectroscopic ellipsometry study of HfO_2 thin films grown by using the pulsed-source MOCVD2005
- Author(s)
  Y.D.Zheng, H Mizuta, Y.Tsuchiya, M.Endo, D.Sato, S.Oda
- Journal Title
  
  journal of Applied Physics 97
  
  Pages: 23527-23527
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Charge injection and trapping in silicon naNo.crystals2005
- Author(s)
  M.A.Rafiq, Y.Tsuchiya, H.Mizuta, S.Oda, S.Uno, Z.A.K.Durrani, W.I.Milne
- Journal Title
  
  Applied Physics Letters 87
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode2005
- Author(s)
  Y.Tsuchiya, T.Nakatsukasa, H.Mizuta, S.Oda, A.Kojima, N.Koshida
- Journal Title
  
  Materials Research Society Symposium Proceedings 832
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Pr-Silicate Ultrathin Films for High-k Gate Dielectric Prepared by Metal-Organic Chemical Vapor Deposition2004
- Author(s)
  Yoshishige Tsuchiya
- Journal Title
  
  2004 Electronic Materials Conference Technical Program
  
  Pages: 30-30
- Data Source
  KAKENHI-PROJECT-16760247
[Journal Article] Nanocrystalline silicon dot displacement using speed-controlled tapping-mode atomic force microscopy2004
- Author(s)
  S.Kanjanachuchai, Y.Tsuchiya, K.Usami, S.Oda
- Journal Title
  
  Microelectronic Engineering 73-74
  
  Pages: 615-615
- Data Source
  KAKENHI-PROJECT-16206030
[Journal Article] Advanced Studies of High-k Gate Dielectrics toward Future Generation with Equivalent Gate Oxide Thickness of Less Than 1 nm2004
- Author(s)
  Yoshishige Tsuchiya
- Journal Title
  
  Proceedings of the 7^<th> China-Japan Symposium on Thin Films (CISTF-7)
  
  Pages: 118-121
- Data Source
  KAKENHI-PROJECT-16760247
[Presentation] Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots2010
- Author(s)
  Jun Ogi, T Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, David David Williams, Shunri Oda, Toshihiko Mizuta
- Organizer
  QDCAM2010
- Place of Presentation
  Cambridge
- Year and Date
  2010-01-11
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Hybrid Silicon Nanoelectromechanical Devices : Physics and Applications2010
- Author(s)
  Hiroshi Mizuta, Yoshishige Tsuchiya, Shunri Oda
- Organizer
  UK-Japan Workshop on Novel Phenomena and Technologies in Semiconductor Nanostructures
- Place of Presentation
  Tokyo
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Suspended quantum dot devices for sensor or quantum bit applications2009
- Author(s)
  Jun Ogi, T Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, David Williams, Toshihiko Mizuta, Shunri Oda
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices in 2030 : Prospects by World's Leading Scientists
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Electron-phonon interaction in suspended Si double quantum dots2009
- Author(s)
  Jun Ogi, T Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, David David Williams, Shunri Oda
- Organizer
  International Microprocesses and Nanotechnology Conference (MNC 2009)
- Place of Presentation
  Sappporo (Japan)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Study of single-electron transport via suspended double silicon quantum dots2009
- Author(s)
  Jun Ogi, T.Ferrus, Yoshishige Tsuchiya, Ken Uchida, D.A.Williams, Shunri Oda, Hiroshi Mizuta
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2009-06-13
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] シリコン多重量子ドットアレイデバイスにおける電子輸送特性評価2008
- Author(s)
  山端元音, 土屋良重, 水田博, 小田俊理
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋市
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Pr-silicate極薄膜界面化学結合状態のin-situ N2アニール処理依存性2008
- Author(s)
  古川亮介、土屋良重、北村幸司、野平博司、小田俊理
- Organizer
  第13回「ゲートスタック研究会-材料・プロセス・評価の物理-」
- Place of Presentation
  三島市
- Year and Date
  2008-02-14
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] ダンピングを考慮したNEMSメモリの過渡応答特性の解析2008
- Author(s)
  永見佑, 松田真之介, 土屋良重, 斎藤慎一, 新井唯, 嶋田壽一, 水田博, 小田俊理
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋市
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Switching properties of electromechanically bistable and multistable bridges for nonvolatile memory applications2008
- Author(s)
  Y. Tsuchiya
- Organizer
  IEEE Silicon Nanoelectrinics Workshop
- Place of Presentation
  Honolulu
- Year and Date
  2008-06-15
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] 磁場印加陽極酸化法による高アスペクト比2次元フォトニック結晶形成機構2008
- Author(s)
  筆宝大平, 浦川圭, 土屋良重, 水田博, 越田信義, 小田俊理
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋市
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Mechanism of One-Directional Nano Etching in silicon Using Magnetic-Field-Assisted Anodization2008
- Author(s)
  D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, S. Oda
- Organizer
  Porous Semiconductors Science and Technology 2008
- Place of Presentation
  Mallorca 1
- Year and Date
  2008-03-10
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Optical Properties of Silicon Three-Dimensional Photonic Crystal Fabricated by Self-Aligned Two-Directional Electrochemical Etching Method,2007
- Author(s)
  D. Hippo, Y. Tsuchiya, H. Mizuta, S. Oda, K. Urakawa, N. Koshida
- Organizer
  4th International Conference on Group IV Photonics
- Place of Presentation
  Tokyo
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] ナノ結晶シリコンドット発光デバイスの断面構造解析と窒化膜を利用した高性能化の検討2007
- Author(s)
  鄭恵貞, 栗原智之, 田中敦之, 宇佐美浩一, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] 2重単電子トランジスタ型リードアウトによる2量子ビット電荷偏極検出の検討2007
- Author(s)
  川田善之, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] 極薄熱酸化膜を界面層に用いたMOCVD堆積Pr系高誘電率絶縁膜の電気特性評価2007
- Author(s)
  古川亮介, 土屋良重, 野平博司, 丸泉琢也, 白木靖寛, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] 2方向エッチングによるシリコン3次元フォトニック結晶の作製とフォトニックバンドギャップ効果2007
- Author(s)
  筆宝大平, 土屋良重, 水田博, 浦川圭, 越田信義, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] 表面修飾したナノ結晶シリコンドットを用いたLB膜作製2007
- Author(s)
  田中敦之, 土屋良重, 宇佐美浩一, 斎藤慎一, 新井唯, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] VHFプラズマ気相形成シリコンナノドットへの不純物ドーピング2007
- Author(s)
  稲葉直樹, 宇佐美浩一, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] DFT simulation of dynamic charge states in doubles silicon quantumdots2007
- Author(s)
  S. Higashijima, S. Sawai, Y. Tsuchiya, M. Okamoto, H. Mizuta, and S. Oda
- Organizer
  IEEE Silicon Nanoelectrinics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2007-06-10
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Control of electrostatic coupling observed for Si double quantum dot structures2007
- Author(s)
  G. Yamahata, Y. Tsuchiya, S. Oda and H. Mizuta
- Organizer
  Solid State Devices and Materials Conference, Extended Abstracts
- Place of Presentation
  Tsukuba
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge2007
- Author(s)
  J. Ogi, Y. Tsuchiya, H. Mizuta, and S. Oda
- Organizer
  33rd International Conference on Micro-and Nano-Engineering
- Place of Presentation
  Copenhagen
- Year and Date
  2007-09-25
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Suspended-Gate MOSFETのための梁構造の作製とC-V測定によるpull-inの観測2007
- Author(s)
  柴村純平, Benjamin Provost, 土屋良重, 宇佐美浩一, 斎藤慎一, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] 第一原理計算によるシリコン極薄膜のフォノン解析2007
- Author(s)
  澤井俊一郎, 東島賢, 宇野重康, 岡本政邦, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Characteristic of Single Nanocrystalline Silicon Quantum Dot Resonant Tunneling Diodes in Series Combination2007
- Author(s)
  Aklmadi Surawijaya, Yoshishige Tsuchiya, Hiroshi Mizuta, Shunri Oda
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Influence of Crystal Orientation of Substrate on Low Temperature Synthesis of Silicon Nanowires from Si2H62007
- Author(s)
  Saeed Akhtar, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures(ICSI-5)
- Place of Presentation
  Marseille
- Year and Date
  2007-05-21
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] NEMSメモリデバイス実現に向けた電荷注入2次元シリコンナノドット層のKFM観察2007
- Author(s)
  松田真之介, 永見佑, 土屋良重, 斎藤慎一, 新井唯, 嶋田壽一, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] High-speed and Non-volatile Memory Devices Using Macroscopic Polarized Stack of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barrier2007
- Author(s)
  Yoshishige Tsuchiya, et. al.
- Organizer
  IEEE Silicon Nanoelectrinics Workshop 2007
- Place of Presentation
  Kyoto,Japan
- Year and Date
  2007-06-10
- Data Source
  KAKENHI-PROJECT-19760212
[Presentation] Conduction of size controlled silicon nanocrystals film2007
- Author(s)
  Xin Zhou, Hea-Jeong Cheong, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] 低温でのジシランを用いた単結晶シリコンナノワイヤーの作製2007
- Author(s)
  SAEED AKHTAR, 田中敦之, 宇佐美浩一, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] 量子ドットを有するシリコンナノブリッジトランジスタの電子輸送特性評価2007
- Author(s)
  小木純, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Observation of Size Dependent Structural Defects in Silicon Nanowires2007
- Author(s)
  Saeed Akhtar, K. Usami, Y. Tsuchiya, H. Mizuta, and S. Oda
- Organizer
  20th International Microprocesses and Nanotechnology Conference (MNC 2007)
- Place of Presentation
  Kyoto
- Year and Date
  2007-11-07
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Phonon properties of ultra thin silicon films2007
- Author(s)
  S. Sawai, S. Uno, M. Okamoto, Y. Tsuchiya, S. Oda and H. Mizuta
- Organizer
  2nd Workshop on ab initio phonon calculations
- Place of Presentation
  Cracow
- Year and Date
  2007-12-05
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Formation of strongly-coupled multiple-dot in the dual recess structured silicon channel2007
- Author(s)
  Manoharan Muruganathan, 川田善之, Mohammed Khalafalla, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits2007
- Author(s)
  Y. Kawata, M. Manoharan, Y. Tsuchiya, H. Mizuta and S. Oda
- Organizer
  IEEE Silicon Nanoelectrinics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2007-06-10
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Low turn on voltage Electroluminescence based on size reduced SiQDs by using HF2007
- Author(s)
  Hea Jeong Cheong, A. Tanaka, D. Hippo, K. Usami, , Y. Tsuchiya, H. Mizuta, S. Oda
- Organizer
  CLEO/QELS 2007
- Place of Presentation
  Baltimore
- Year and Date
  2007-05-08
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] スタック型二重フローティングゲート分極構造の作製と評価2007
- Author(s)
  栗原智之, 新倉浩樹, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] シリコン2重結合量子ドット構造における静電結合制御2007
- Author(s)
  山端元音, 土屋良重, 水田博, 小田俊理
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] High-speed and Non-volatile Memory Devices Using Macroscopic Polarized Stack of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barrier2007
- Author(s)
  Y. Tsuchiya, T. Kurihara, D. Sato, H. Niikura, H. Mizuta and S. Oda
- Organizer
  IEEE Silicon Nanoelectrinics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2007-06-10
- Data Source
  KAKENHI-PROJECT-19206035
[Presentation] Study of single-charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout2007
- Author(s)
  Y. Kawata, S. Nishimoto, Y. Tsuchiya, S. Oda and H. Mizuta
- Organizer
  Solid State Devices and Materials Conference, Extended Abstracts
- Place of Presentation
  Tsukuba
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19206035

1. ODA Shunri (50126314)

# of Collaborated Projects: 5 results

# of Collaborated Products: 76 results
2. MIZUTA Hiroshi (90372458)

# of Collaborated Projects: 2 results

# of Collaborated Products: 70 results
3. 畑谷成郎 (90302942)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. UCHIDA Ken (30446900)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
5. SHIMADA Toshikazu

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

TSUCHIYA Yoshishige 土屋 良重

Research Projects

Research Products

Co-Researchers

Integrated Assembly of NeoSilicon towards Quantum Information Devices

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高速スイッチング可能な双安定状態を有するシリコン2重浮遊ゲートマルチスタック創製Principal Investigator

Principal Investigator

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原子層MOCVDとエリプソメトリ成膜モニタを用いた極薄高誘電率ゲート絶縁膜の作製Principal Investigator

Principal Investigator

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Self-assembled integration technologies of silicon quantum dots toward future NeoSilicon quantum information devices

Principal Investigator

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Atomic scale control of high-k dielectric ultrathin film grown by atomic layer-by-layer MOCVD with using in situ spectroscopic ellipsometry monitoring

Principal Investigator

Project Period (FY)

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Research Institution

Single Electron Devices Based on NeoSilicon Materials

Principal Investigator

Project Period (FY)

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Control of Particle Size and Position of Nano-crystalline Silicon

Principal Investigator

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Research Institution

[Journal Article] Suspended quantum dot fabrication on a heavily-doped silicon nanowire by suppressi unintentional quantum dot formation2010

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[Journal Article] Experimental observation of enhanced electron-phonon interaction in suspended Sdouble quantum dots2010

Author(s)

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[Journal Article] Control of Inter-dot Electrostatic Coupling in an Asymmetric Silicon Double Quantum Dot Operating at 4. 5 K2009

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[Journal Article] Electron transport through silicon serial triple quantum dots2009

Author(s)

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[Journal Article] Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure2009

Author(s)

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[Journal Article] Size-Dependent Structural Characterization of Silicon Nanowires2008

Author(s)

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[Journal Article] Influence of nanocrystal size on conduction mechanism across silicon nanocrystals2008

Author(s)

Journal Title

Data Source

[Journal Article] Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge2008

Author(s)

Journal Title

Data Source

[Journal Article] Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures2008

Author(s)

TSUCHIYA Yoshishige 土屋良重