NAKANO SATOSHI 中野智

… Alternative Names

NAKANO Satoshi 中野智

KANGAWA Yoshihiro 中野智

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Researcher Number	80423557
Affiliation (Current)	2025: 九州大学, 応用力学研究所, 技術班長
Affiliation (based on the past Project Information) *help	2018: 九州大学, 応用力学研究所, 技術班長 2017: 九州大学, 応用力学研究所, その他 2012 – 2016: 九州大学, 応用力学研究所, 技術専門職員 2007 – 2009: 九州大学, 応用力学研究所, 技術職員
Review Section/Research Field	Except Principal Investigator Crystal engineering / Applied materials science/Crystal engineering
Keywords	Except Principal Investigator 結晶成長 / SiC / 転位 / 3次元解析 / 結晶工学 / 欠陥制御 / マルチフジックス / マルチフィジックス / シミュレーション / Al2O3 … More / Al203 / Aｌ203 / GaN / 結晶性長 / 残留応力 / シリコンカーバイド / ワイドバンドギャップ / 昇華法 / シリコン / Si / 電磁場 Less

Development of simulator of crystal growth based on multi-physics
- Principal Investigator
  
  KAKIMOTO KOICHI
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Kyushu University
Development of quantitative analysis of defects in wide bandgap materials
- Principal Investigator
  
  Kakimoto Koichi
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Kyushu University
Development of macro-nano combined growth method for energy saving
- Principal Investigator
  
  KAKIMOTO Koichi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Development of new method of crystal growth using dynamic electromagnetic force
- Principal Investigator
  
  KAKIMOTO Koichi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University

All 2018 2017 2016 2015 2014 2013 2012 2010 2009 2008 2007 Other

All Journal Article Presentation

[Journal Article] Relationship between carbon concentration and carrier lifetime in CZ-Si crystals2018
- Author(s)
  Miyamura Y.、Harada H.、Nakano S.、Nishizawa S.、Kakimoto K.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 486 Pages: 56-59
- DOI
  10.1016/j.jcrysgro.2018.01.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H03859
[Journal Article] Effect of oxygen on dislocation multiplication in silicon crystals2018
- Author(s)
  Wataru Fukushima, Hirofumi Harada, Yoshiji Miyamura Masato Imai, Satoshi Nakano, Koichi Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 486 Pages: 45-49
- DOI
  10.1016/j.jcrysgro.2017.12.030
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03859
[Journal Article] Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth2018
- Author(s)
  Liu Xin、Harada Hirofumi、Miyamura Yoshiji、Han Xue-feng、Nakano Satoshi、Nishizawa Shin-ichi、Kakimoto Koichi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 499 Pages: 8-12
- DOI
  10.1016/j.jcrysgro.2018.07.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H03859
[Journal Article] Silicon bulk growth for solar cells: Science and technology2017
- Author(s)
  Koichi Kakimoto, Bing Gao, Satoshi Nakano, Hirofumi Harada, and Yoshiji Miyamura
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 (2) Issue: 2 Pages: 020101-020101
- DOI
  10.7567/jjap.56.020101
- NAID
  210000147405
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03859
[Journal Article] Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics2016
- Author(s)
  Takahiro Kawamura, Mitsutoshi Mizutani, Yasuyuki Suzuki, Yoshihiro Kangawa, and Koichi Kakimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 3 Pages: 031301-031301
- DOI
  10.7567/jjap.55.031301
- NAID
  210000146126
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13351, KAKENHI-PROJECT-16H03859
[Journal Article] Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory2016
- Author(s)
  S. Araki, B. Gao, S. Nishizawa, S. Nakano, and K. Kakimoto
- Journal Title
  
  Cryst. Res. Technol.
  
  Volume: 51, No. 5 Issue: 5 Pages: 344-348
- DOI
  10.1002/crat.201500344
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13351
[Journal Article] Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001).2014
- Author(s)
  Ryosuke Iguchi, Takahiro Kawamura, Yasuyuki Suzuki, Masato Inoue, Yoshihiro Kangawa, Koichi Kakimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 065601 Issue: 6 Pages: 1-4
- DOI
  10.7567/jjap.53.065601
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24360012
[Journal Article] Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory2014
- Author(s)
  T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, K. Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 385 Pages: 95-99
- DOI
  10.1016/j.jcrysgro.2013.03.036
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24360012
[Journal Article] Highly efficient and stable implementation of the Alexander-Haasen model for numerical analysis of dislocationin crystalgrowth2013
- Author(s)
  B. Gao n, S.Nakano,K.Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 369 Pages: 32-37
- DOI
  10.1016/j.jcrysgro.2013.01.039
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360012
[Journal Article] Analysis of growth velocity of SiC growth and by the Physical vapor transport method2012
- Author(s)
  Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano and Shin-ichi Nishizawa
- Journal Title
  
  Materials Science Forum
  
  Volume: 717-720 Pages: 25-28
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360012
[Journal Article] Numerical analysis of the velocity of SiC growth by the top seeding method2012
- Author(s)
  F. Inui, B. Gao, S. Nakano, K. Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 348 Issue: 1 Pages: 71-74
- DOI
  10.1016/j.jcrysgro.2012.03.036
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360012
[Journal Article] The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AIN crystals2012
- Author(s)
  B. Gao, S. Nakano, K. Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 338 Issue: 1 Pages: 69-74
- DOI
  10.1016/j.jcrysgro.2011.11.030
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360012
[Journal Article] Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory2012
- Author(s)
  T Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano Y Kangawa, K. Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 352 Issue: 1 Pages: 177-180
- DOI
  10.1016/j.jcrysgro.2012.01.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360012
[Journal Article] Numerical Analysis of mc-Si Crystal Growth2010
- Author(s)
  Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X.J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa
- Journal Title
  
  Solid State Phenomena 156-158,4
  
  Pages: 193-198
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Effect of crucible rotation on oxygen concentration in the p olycrystalline silicon grown by unidirectional solidification method2009
- Author(s)
  S. Nakano, et al
- Journal Title
  
  Journal of Crystal Growth (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Modeling and simulation of Si crystal growth from melt2009
- Author(s)
  Lijun Liu, Hiroaki Miyazawa, Satoshi Nakano, Xin Liu, Zaoyang Li, Koichi Kakimoto
- Journal Title
  
  Physica status solidi C6,3
  
  Pages: 645-652
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Effect of crucible rotation on oxygen concentration in the polycrystalline silicon grown by unidirectional solidification method2009
- Author(s)
  S.Nakano, et al
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 1051-1055
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Study on thermal stress in a silicon ingot during a unidirectional solidification process2008
- Author(s)
  X.J. Chen, S. Nakano, L.J. Liu, K. Kakimoto
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4330-4335
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Numerical investigation of crystal growth process of bulk Si and nitrides-a review2007
- Author(s)
  K. Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X.J. Chen, Y. Kangawa
- Journal Title
  
  Cryst. Res. Technol. 42,12
  
  Pages: 1185-1189
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Numerical Analysis of Impurity Transport in a Unidirectional Solidification Furnace for Multicrystalline Silicon
- Author(s)
  Bing Gao, Satoshi Nakano, Koichi Kakimoto
- Journal Title
  
  日本結晶成長学会誌 36
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Presentation] Effect of oxygen on dislocation density in si single crystal for solar cells during solidification and cooling process2018
- Author(s)
  Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, and Koichi Kakimoto
- Organizer
  10th International Workshop on Crystalline Silicon for Solar Cells
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03859
[Presentation] Mass-flux Analysis of AlN Crystal Growth at a Seed Face in PVT Method2017
- Author(s)
  Yudai Maji, Satoshi Nakano, Koichi Kakimoto
- Organizer
  7th International Workshop on Crystal Growth TechnologyPotsdam
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03859
[Presentation] Effect of Oxygen on Dislocation Multiplication during Growth of Crystalline Silicon for Solar Cell2017
- Author(s)
  Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura and Koichi Kakimoto
- Organizer
  7th International Workshop on Crystal Growth TechnologyPotsdam
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03859
[Presentation] Numerical analysis of dislocation density in Si single crystal with oxygen diffusion2017
- Author(s)
  Wataru Fukushima, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura Koichi Kakimoto
- Organizer
  7th International Workshop on Crystal Growth TechnologyPotsdam
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03859
[Presentation] AlN結晶成長の昇華法における物質流束解析2017
- Author(s)
  間地雄大，中野智，柿本浩一
- Organizer
  第46回結晶成国内会議（JCCG-46）
- Data Source
  KAKENHI-PROJECT-16H03859
[Presentation] AlN結晶成長の昇華法におけるシード面近傍の物質流束解析2017
- Author(s)
  間地雄大、中野智、柿本浩一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Data Source
  KAKENHI-PROJECT-16H03859
[Presentation] Effect of oxygen atoms on dislocation multiplication in a silicon crystal2016
- Author(s)
  W. Fukushima, B. Gao, S. Nakano, H. Harada, Y. Miyamura, and K. Kakimoto
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  Nagoya Congress Center
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13351
[Presentation] Relationship between the Dislocation Density and Residual Stress in a GaN Crystal during the Cooling Process2016
- Author(s)
  S. Nakano, B. Gao, K. Kakimoto
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Sheraton Kona Resort & Spa at Keauhou Bay, Hawaii, USA
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13351
[Presentation] GaN 単結晶における基板と冷却速度の転位密度に与える影響2016
- Author(s)
  中野智、高冰、柿本浩一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大大岡山キャンパス、東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13351
[Presentation] Crystal growth of AlN: from atomic scale to macro scale2016
- Author(s)
  Koichi Kakimoto, Satoshi Nakano, Yoshihiro Kangawa
- Organizer
  E-MRS 2016 Fall Meeting
- Place of Presentation
  Central Campus of Warsaw University of Technology（Warsaw、Poland）
- Year and Date
  2016-09-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03859
[Presentation] Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling proces2016
- Author(s)
  S. Nakano, B. Gao, K. Kakimoto
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  Nagoya Congress Center
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03859
[Presentation] ATOMIC AND MACRO SCALE CALCULATIONS ON CRYSTAL GROWTH OF WIDE BANDGAP SEMICONDUCTORS2015
- Author(s)
  Koichi Kakimoto, Shin-ichi NIshizawa, Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi
- Organizer
  ACCGE-20/OMVPE-17
- Place of Presentation
  Big Sky, Montana, USA
- Year and Date
  2015-08-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13351
[Presentation] EFFECT OF COOLING RATE ON GROWN-IN DISLOCATION MULTIPLICATION ON PRISMATIC SLIP PLANES FOR GAN SINGLE CRYSTAL2015
- Author(s)
  Satoshi Nakano, Bing Gao, Koichi Kakimoto
- Organizer
  ACCGE-20/OMVPE-17
- Place of Presentation
  Big Sky, Montana, USA
- Year and Date
  2015-08-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13351
[Presentation] Numerical Analysis of the Effect of Substrate and Cooling Rate on Grown-in Dislocation Multiplication for GaN Single Crystal2015
- Author(s)
  S. Nakano, B. Gao, K. Kakimoto
- Organizer
  The 8th International Workshop on Modeling in Crystal Growth
- Place of Presentation
  Spa, Belgium
- Year and Date
  2015-11-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13351
[Presentation] 物理的気相輸送法を用いた4H-SiC 単結晶成長における基底面転位の3 次元2014
- Author(s)
  高　　冰，中野　智，柿本浩一
- Organizer
  第61 回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] PVT を用いたSiC 結晶成長における不純物混入解析2014
- Author(s)
  柿本浩一，Bing Gao，中野　智，寒川義裕，西澤伸一
- Organizer
  第61 回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] PVT 成長法を用いた4H-SiC 単結晶における基底面転位の低減に対するヒーター電力制御の最適化2014
- Author(s)
  高　　冰，中野　智，柿本浩一
- Organizer
  第61 回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory2013
- Author(s)
  Koichi Kakimoto, Takuya Shiramomo, Bing Gao, Frederic Mercier, Shin-ichi Nishizawa, Satoshi Nakano
- Organizer
  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] 昇華法成長SiC結晶中への不純物混入解析2013
- Author(s)
  柿本浩一，高冰，白桃拓哉，西澤伸一，中野智，寒川義裕
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] シリコン結晶系太陽電池の結晶成長と変換効率2012
- Author(s)
  柿本浩一, Bing Gao,中野智, 寒川義裕, 原田博文
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学(招待講演)
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] PVTを用いたSiCバルク結晶成長における転位および多結晶分布の非定常数値解析2012
- Author(s)
  高冰, 中野智, 西澤伸一, 柿本浩一
- Organizer
  第42回結晶成長国内会議NCCG-42
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] シリコン多結晶育成時における結晶成長速度と炉の大きさの固液界面形状に与える影響2009
- Author(s)
  中野智
- Organizer
  2009年秋季第71回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-19360012
[Presentation] 数値解析を用いた多結晶シリコン育成時における融液内酸素濃度に対する増蝸回転数依存性の考察2008
- Author(s)
  中野智
- Organizer
  第38回結晶成長国内会議
- Place of Presentation
  仙台市戦災復興記念館
- Data Source
  KAKENHI-PROJECT-19360012
[Presentation] Effect of crucible rotation on oxygen concentration in the melt during crystallization of silicon for solar cells2008
- Author(s)
  S. Nakano
- Organizer
  The 5th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Hawaii, USA
- Data Source
  KAKENHI-PROJECT-19360012
[Presentation] Global Modeling of a Directional Solidification Process for Multi-Crystalline Silicon2007
- Author(s)
  K. Kakimoto, L. Liu, S. Nakano
- Organizer
  2nd European Photovoltaic Solar Energy Conference and Exhibition
- Place of Presentation
  FIERA MILANO/Rho in Milan, Italy
- Year and Date
  2007-09-03
- Data Source
  KAKENHI-PROJECT-19360012
[Presentation] 二次元核形成理論を用いたSiC昇華法成長における多形安定性の非定常解析
- Author(s)
  荒木清道，高冰，中野智，西澤伸一，柿本浩一
- Organizer
  NCCG-44
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2014-11-06 – 2014-11-08
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] Three-dimensional modeling of basal plane dislocations in 4H-SiC
- Author(s)
  Bing Gao, Satoshi Nakano, Koichi Kakimoto
- Organizer
  E-MRS 2014 SPRING MEETING
- Place of Presentation
  Congress Center,Lille, France
- Year and Date
  2014-05-27 – 2014-05-29
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] 二次元核形成理論を用いたSiC 昇華法成長における多形安定性の非定常解析
- Author(s)
  荒木清道，高　　冰，中野　智，西澤伸一，柿本浩一
- Organizer
  2014年第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360012

1. KAKIMOTO Koichi (90291509)

# of Collaborated Projects: 4 results

# of Collaborated Products: 43 results
2. NISHIZAWA Shin-ichi (40267414)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
3. KANGAWA Yoshihiro (90327320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. LIU Lijun (00380535)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
5. UDA Satoshi (90361170)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. HUANG Xinming (80375104)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

NAKANO SATOSHI 中野 智

NAKANO Satoshi 中野 智

KANGAWA Yoshihiro 中野 智

Research Projects

Research Products

Co-Researchers

Development of simulator of crystal growth based on multi-physics

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of quantitative analysis of defects in wide bandgap materials

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of macro-nano combined growth method for energy saving

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of new method of crystal growth using dynamic electromagnetic force

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Relationship between carbon concentration and carrier lifetime in CZ-Si crystals2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Effect of oxygen on dislocation multiplication in silicon crystals2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Silicon bulk growth for solar cells: Science and technology2017

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics2016

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001).2014

Author(s)

Journal Title

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[Journal Article] Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory2014

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[Journal Article] Highly efficient and stable implementation of the Alexander-Haasen model for numerical analysis of dislocationin crystalgrowth2013

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[Journal Article] Analysis of growth velocity of SiC growth and by the Physical vapor transport method2012

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NAKANO SATOSHI 中野智

NAKANO Satoshi 中野智

KANGAWA Yoshihiro 中野智