FUJII Katsushi 藤井克司

Researcher Number	80444016
Other IDs
Affiliation (based on the past Project Information) *help	2018 – 2020: 国立研究開発法人理化学研究所, 光量子工学研究センター, 研究員 2016 – 2017: 北九州市立大学, 付置研究所, 教授 2015: 国立研究開発法人理化学研究所, 光量子工学研究領域, 研究員 2009 – 2011: 東北大学, 学際科学国際高等研究センター, 客員准教授
Review Section/Research Field	Except Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Except Principal Investigator 半導体 / 光触媒 / GaN / 光起電力 / 水素 / 水分解 / バンドアラインメント / 界面準位 / 半導体物理 / 分極 … More / エピタキシャル成長 / フェルミエネルギー / 表面構造 / 窒化ガリウム / 光電気化学 / 結晶成長 / 再生可能エネルギー / 有機金属気相成長 / 分極制御 / 化合物半導体 / 窒化 / ケミカルリフトオフ / CrN / InGaN / AlGaN / 発光ダイオード(LED) / ケミカル・リフト・オフ / 紫外LED / LED / 窒化物半導体 Less

Elucidation of band alignment in photocatalysts to obtain design strategy based on semiconductor physics
- Principal Investigator
  
  Sugiyama Masakazu
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Artificial photosynthesis devices using polarization-engineered nitride semiconductors for visible-light response and high durability
- Principal Investigator
  
  Sugiyama Masakazu
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Application of chemical lift-off process to the fabrication of vertical ultra-violet LEDs
- Principal Investigator
  
  YAO Takafumi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University

All 2020 2019 2018 2017 2016 2015 2011 2010 2009

All Journal Article Presentation Book

[Book] 発光ダイオード2011
- Author(s)
  八百隆文、藤井克司、神門賢二
- Total Pages
  352
- Publisher
  朝倉書店
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] First-principles modeling of GaN(0001)/water interface: Effect of surface charging2019
- Author(s)
  M. Sato, Y. Imazeki, K. Fujii, Y. Nakano, and M. Sugiyama
- Journal Title
  
  The Journal of Chemical Physics
  
  Volume: 150 Issue: 15 Pages: 154703-154703
- DOI
  10.1063/1.5086321
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K13784, KAKENHI-PROJECT-18H03772
[Journal Article] Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode2017
- Author(s)
  Akihiro Nakamura, Michihiro Suzuki, Katsushi Fujii, Yoshiaki Nakano, Masakazu Sugiyama
- Journal Title
  
  J. Crystal Growth
  
  Volume: 464 Pages: 180-184
- DOI
  10.1016/j.jcrysgro.2016.12.005
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H02238, KAKENHI-PROJECT-14J08965
[Journal Article] Photoelectrochemical Property Differences between NiO Dots and Layer on n-Type GaN for Water Splitting2017
- Author(s)
  K. Koike, K. Yamamoto, S. Ohara, M. Sugiyama, Y. Nakano, K. Fujii
- Journal Title
  
  J. Electrochemical Soc.
  
  Volume: 42 Issue: 13 Pages: 9493-9499
- DOI
  10.1149/2.1191613jes
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H02238
[Journal Article] A 24.4% solar to hydrogen energy conversion efficiency by combining concentrator photovoltaic modules and electrochemical cells2015
- Author(s)
  Akihiro Nakamura, Yasuyuki Ota, Kayo Koike, Yoshihide Hidaka, Kensuke Nishioka, Masakazu Sugiyama, Katsushi Fujii
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 10 Pages: 107101-107101
- DOI
  10.7567/apex.8.107101
- NAID
  210000137684
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H02238, KAKENHI-PROJECT-14J08965
[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010
- Author(s)
  Lee, SW ; Ha, JS ; Lee, HJ ; Lee, HJ ; Goto, H ; Hanada, T ; Goto, T ; Fujii, K ; Cho, MW ; Yao, T
- Journal Title
  
  JOURNAL OF PHYSICS D-APPLIED PHYSICS
  
  Volume: 43 Pages: 175101-175101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition2010
- Author(s)
  Jung, M ; Chang, J ; Lee, H ; Ha, JS ; Park, JS ; Park, S ; Fujii, K ; Yao, T ; Kil, GS ; Lee, S ; Cho, M ; Whang, S
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
  
  Volume: 28 Pages: 623-626
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010
- Author(s)
  Lee, SW; Ha, JS; Lee, HJ; Lee, HJ; Goto, H; Hanada, T; Goto, T; Fujii, K; Cho, MW; Yao, T
- Journal Title
  
  JOURNAL OF PHYSICS D-APPHED PHYSICS
  
  Volume: 43 Pages: 175101-175101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article]2010
- Author(s)
  八百隆文、藤井克司、神門賢二
- Journal Title
  
  発光ダイオード(朝倉書店)
  
  Pages: 1-352
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009
- Author(s)
  Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
- Journal Title
  
  Applied Surface Science
  
  Volume: 255 Pages: 8582-8586
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009
- Author(s)
  Lee SW, Ha JS, Lee HJ, Lee HJ, Goto H, Hanada T, Goto T, Fujii K. Cho MW. Yao T
- Journal Title
  
  Applied Physics Letters 94
  
  Pages: 82105-82105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009
- Author(s)
  Fujii K, Lee S, Ha JS, Lee HJ, Lee HJ, Lee SH, Kato T, Cho MW, Yao T
- Journal Title
  
  Applied Physics Letters
  
  Volume: 94 Pages: 2420108-2420108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009
- Author(s)
  Fujii K, Lee S, Ha JS, Lee HJ, Lee HJ, Lee SH, Kato T, Cho MW, Yao T
- Journal Title
  
  Applied Physics Letters 94
  
  Pages: 242108-242108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009
- Author(s)
  Lee SW, Ha JS, Lee HJ, Lee HJ, Goto H, Hanada T, Goto T, Fujii K, Cho MW, Yao T
- Journal Title
  
  Applied Physics Letters
  
  Volume: 94 Pages: 82105-82105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009
- Author(s)
  Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
- Journal Title
  
  Applied Surface Science 255
  
  Pages: 8582-8586
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Presentation] Pt担持したSrTiO3(100)面の光電気化学特性2020
- Author(s)
  沈昊哉、今関裕貴、佐藤正寛、藤井克司、嶺岸耕、中野義昭、杉山正和
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03772
[Presentation] Comparison of Light-Intensity-Dependent Open-Circuit Potential among TiO2, SrTiO3 and GaN Single-Crystalline Photoanodes2019
- Author(s)
  Supawan Ngamprapawat, Yuki Imazeki, Tsutomu Minegishi, Masahiro Sato, Katsushi Fujii, Masakazu Sugiyama
- Organizer
  MRS fall meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03772
[Presentation] Effect of Dissolved O2 on Band Alignment at n-GaN/NaOH Interface2019
- Author(s)
  Yuki Imazeki,Supawan Ngamprapawat, Masahiro Sato, Katsushi Fujii, Tsutomu Minegishi, Masakazu Sugiyama, Yoshiaki Nakano
- Organizer
  MRS fall meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03772
[Presentation] n-GaN光電極/電解液界面バンドアライメントに及ぼす溶存酸素の影響2019
- Author(s)
  今関裕貴、ナーンプラパーワットスパワン、佐藤正寛、藤井克司、嶺岸耕、杉山正和、中野義昭
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-18H03772
[Presentation] Material-dependent Photoresponse of quasi-Fermi Level in Single-crystalline Photoanodes2019
- Author(s)
  Supawan Ngamprapawat, Yuki Imazeki, Tsutomu Minegishi, Katsushi Fujii, Masakazu Sugiyama
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-18H03772
[Presentation] Impact of surface morphology of Al(Ga)N interlayer for polarization-engineered water splitting photocathode2018
- Author(s)
  Hiroaki Maruyama, Katsushi Fujii, Yoshiaki Nakano, Masakazu Sugiyama
- Organizer
  IWN 2018, Nov. 11-16, Kanazawa, Japan, OD13-7
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03772
[Presentation] The Effect of Illumination on the Geometric Structure of Water Molecules on GaN(0001) Surface2018
- Author(s)
  Masahiro Sato, Yuki Imazeki, Katsushi Fujii, Yoshiaki Nakano, Masakazu Sugiyama
- Organizer
  MRS 2018 Fall Meeting, Nov. 25-30, 2018, Boston, USA, CM03.09.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03772
[Presentation] Pt co-catalyst by photo-electrodeposition on tandem nitride semiconductor photocathode for zero-bias solar water splitting2017
- Author(s)
  H. Maruyama, A. Nakamura, Y. Nakano, K. Fujii, M. Sugiyama
- Organizer
  Material and Device Innovations for the Practical Implementation of Solar Fuels (SolarFuel17), Sep 4-6, Barcelona, 2017, SF1.4.2-5
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Photo-Induced Gain of Open-Circuit-Potential (OCP) in GaN Photoelectrodes for Characterizing Defects and Photoelectrochemical Activity2017
- Author(s)
  Y. Imazeki, Y. Iwai, A. Nakamura, K. Koike, K. Watanabe, K. Fujii , M. Sugiyama and Y. Nakano
- Organizer
  MRS Spring Meeting, ES7.9.03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Band Alignment at n-GaN/Electrolyte Interface Explored by Photo-Induced Offset of Open-Circuit Potential for Efficient Water Splitting2017
- Author(s)
  Yuuki Imazeki, Yohei Iwai, Akihiro Nakamura, Kayo Koike, Shin-ichiro Sato, Takeshi Ohshima, Katsushi Fujii, Masakazu Sugiyama and Yoshiaki Nakano
- Organizer
  ECS Trans. 2017 volume 77, issue 4, 25-30, doi: 10.1149/07704.0025ecst
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Polarization engineered photocathode using InGaN/AlN heterostructure for zero-bias solar water splitting2017
- Author(s)
  A. Nakamura, H. Maruyama, Y. Nakano, K. Fujii, M. Sugiyama
- Organizer
  Material and Device Innovations for the Practical Implementation of Solar Fuels (SolarFuel17), Sep 4-6, Barcelona, 2017, SF1.4.1-7
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Impact of surface modification on photo-induced Open-Circuit-Potential (OCP) of GaN anode2016
- Author(s)
  Y. Iwai, A. Nakamura, K. Koike, Y. Nakano, K. Fujii, and M. Sugiyama
- Organizer
  21st International Conference on Photochemical Conversion and Storage of Solar Energy
- Place of Presentation
  Saint Petersburg, Russia
- Year and Date
  2016-07-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] GaN キャップ層導入による低温成長 AlN 層の高品質化および水分解光電極の特性向上2016
- Author(s)
  中村亮裕, 藤井克司, 中野義昭, 杉山正和
- Organizer
  第 8 回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学（京都府・京都市）
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] InGaN/GaN/AlN/GaN可視光応答型水分解光電極2016
- Author(s)
  中村亮裕, 杉山正和, 藤井克司, 中野義昭
- Organizer
  第 77 回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] GaN における Open-Circuit-Potential (OCP) の光強度依存性と表面処理の効果2016
- Author(s)
  岩井耀平, 中村亮裕, 小池佳代, 中野義昭, 藤井克司, 杉山正和
- Organizer
  第 77 回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Superior Catalytic Activity of NiO Island on n-type GaN Photoanode Compared with NiO Protection Layer Structure2016
- Author(s)
  K. Koike, A. Nakamura, K. Yamamoto, S. Ohara, M. Sugiyama, Y. Nakano, and K. Fujii
- Organizer
  21st International Conference on Photochemical Conversion and Storage of Solar Energy
- Place of Presentation
  Saint Petersburg, Russia
- Year and Date
  2016-07-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Low-Temperature Growth of Al(Ga)N/GaN Tunnel Junction with Abrupt Interfaces and Low Dislocation Density for Polarization Engineered Water Splitting Photocathode2016
- Author(s)
  A. Nakamura, M. Suzuki, K. Fujii, Y. Nakano, and M. Sugiyama
- Organizer
  18th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  San Diego, USA
- Year and Date
  2016-07-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] InGaN/AlGaN/GaN Polarization Engineered Water Splitting Photocathode under Visible Light Irradiation2016
- Author(s)
  中村亮裕, 藤井克司, 中野義昭, 杉山正和
- Organizer
  第 35 回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県・守山市）
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Visible Light Responding InGaN/AlN/GaN Polarization Engineered Water Splitting Photocathode2016
- Author(s)
  A. Nakamura, K. Fujii, Y. Nakano and M. Sugiyama
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Orlando, Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Enhanced photoelectrochemical properties of u-GaN/AlN/n-GaN photocathode with improved GaN/AlN interface abruptness2015
- Author(s)
  Akihiro Nakamura, Michihiro Suzuki, Katsushi Fujii, Masakazu Sugiyama, and Yoshiaki Nakano
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Numerical Investigation on a Novel +c-Plane InGaN Based Solar Cell with a Polarization Induced Tunnel Junction2015
- Author(s)
  Akihiro Nakamura, Katsushi Fujii, Masakazu Sugiyama, Yoshiaki Nakano
- Organizer
  11th International Conference on Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijing, China
- Year and Date
  2015-08-31
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02238
[Presentation] Growth of free-standing GaN substrates (Invited)2010
- Author(s)
  HJ Lee, SW Lee, JS Ha, C Kim, JH Chang, K. Fujii, and T. Yao
- Organizer
  SPIE Photonics West
- Place of Presentation
  The Moscone Center, San Francisco, USA
- Year and Date
  2010-01-25
- Data Source
  KAKENHI-PROJECT-21360001
[Presentation] Photo-electro-chemical properties of GaN2010
- Author(s)
  Fujii, K., Goto, T., Yao, T.
- Organizer
  International Workshop on Nitride Semiconductor 2010
- Place of Presentation
  Tampa、Florida、USA.
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21360001
[Presentation] Growth of free-standing GaN substrates(Invited)2010
- Author(s)
  HJ Lee, SW Lee, JS Ha, C Kim, JH Chang, K Fujii, T Yao
- Organizer
  SPIE Photonics West
- Place of Presentation
  The Moscone Center, San Francisco, USA
- Year and Date
  2010-01-25
- Data Source
  KAKENHI-PROJECT-21360001
[Presentation] Photo-electro-chemical properties of GaN2010
- Author(s)
  Fujii, K, Goto, T, Yao, T
- Organizer
  International Workshop on Nitride Semiconductor 2010
- Place of Presentation
  Tampa、Florida、USA
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21360001

1. Sugiyama Masakazu (90323534)

# of Collaborated Projects: 2 results

# of Collaborated Products: 24 results
2. YAO Takafumi (60230182)

# of Collaborated Projects: 1 results

# of Collaborated Products: 15 results
3. GOTO Takenari (10004342)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
4. LEE Hyunjae (10584063)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
5. 小池佳代 (80532423)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 佐藤正寛 (40805769)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results

FUJII Katsushi 藤井 克司

Research Projects

Research Products

Co-Researchers

Elucidation of band alignment in photocatalysts to obtain design strategy based on semiconductor physics

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Artificial photosynthesis devices using polarization-engineered nitride semiconductors for visible-light response and high durability

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Application of chemical lift-off process to the fabrication of vertical ultra-violet LEDs

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] 発光ダイオード2011

Author(s)

Total Pages

Publisher

Data Source

[Journal Article] First-principles modeling of GaN(0001)/water interface: Effect of surface charging2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode2017

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Photoelectrochemical Property Differences between NiO Dots and Layer on n-Type GaN for Water Splitting2017

Author(s)

Journal Title

DOI

Data Source

[Journal Article] A 24.4% solar to hydrogen energy conversion efficiency by combining concentrator photovoltaic modules and electrochemical cells2015

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010

Author(s)

Journal Title

Data Source

[Journal Article] Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition2010

Author(s)

Journal Title

Data Source

[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010

Author(s)

Journal Title

Data Source

[Journal Article]2010

Author(s)

Journal Title

Data Source

[Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009

Author(s)

Journal Title

Data Source

[Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009

Author(s)

Journal Title

Data Source

[Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009

Author(s)

Journal Title

Data Source

[Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009

Author(s)

Journal Title

Data Source

FUJII Katsushi 藤井克司

[Presentation] GaN キャップ層導入による低温成長 AlN 層の高品質化および水分解光電極の特性向上2016