SATO Soshi 佐藤創志

Researcher Number	80649749
Affiliation (based on the past Project Information) *help	2013 – 2016: 東北大学, 国際集積エレクトロニクス研究開発センター, 助教
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator 信頼性物理 / キーワード / OBIRCH解析 / 発光解析 / 経時劣化絶縁破壊 / MOS構造 / 炭化ケイ素 / 破壊痕 / 絶縁破壊 / 酸化膜 / TZDB / TDDB / SiC … More Except Principal Investigator … More SiO2 / 絨毯爆撃状絶縁破壊痕 / 経時酸化膜絶縁破壊 / Hard Breakdown / Soft Breakdown / ＴＤＤＢ / ＭＯＳゲート絶縁膜 / 炭化ケイ素 / 断面TEM観察 / ヘテロ界面 / 発光解析 / 結晶欠陥 / GaN on Si(001) / SiC MOS / 透過型電子顕微鏡 / ヘテロエピタキシャル成長 / 結晶性 / ゲート絶縁膜 / 信頼性物理 / 表面・界面物理解析 / 絶縁破壊機構 Less

ワイドギャップ半導体ＭＩＳ構造における絨毯爆撃状絶縁破壊痕形成モデルの新構築Principal Investigator
- Principal Investigator
  
  佐藤創志
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Fundamental study of high-performance, low-power transistor by hetero interface formation
- Principal Investigator
  
  NIWA Masaaki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University

All 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode2016
- Author(s)
  Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa
- Journal Title
  
  Materials Science Forum
  
  Volume: 858 Pages: 485-488
- DOI
  10.4028/www.scientific.net/msf.858.485
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26870043, KAKENHI-PROJECT-25289082
[Journal Article] Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor2016
- Author(s)
  Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa
- Journal Title
  
  Microelectronics Reliability
  
  Volume: 58 Pages: 185-191
- DOI
  10.1016/j.microrel.2015.09.016
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26870043
[Journal Article] Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor2016
- Author(s)
  S. Sato, K. Yamabe, T. Endoh, M. Niwa
- Journal Title
  
  Microelectronics Reliability
  
  Volume: 58 Pages: 185-191
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289082
[Journal Article] Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors2014
- Author(s)
  Soshi Sato, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, and Masaaki Niwa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- NAID
  210000144325
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC MOSキャパシタに見られる絨毯爆撃状破壊痕2016
- Author(s)
  佐藤創志
- Organizer
  NWDTF in Sendai および通研プロジェクト合同委員会
- Place of Presentation
  東北大学　国際集積エレクトロニクス研究開発センター（仙台）
- Year and Date
  2016-03-05
- Invited
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC MOSキャパシタに見られる絨毯爆撃状破壊痕2016
- Author(s)
  佐藤創志
- Organizer
  NWDTF in Sendai および通研プロジェクト合同委員会
- Place of Presentation
  東北大学国際集積エレクトロニクス研究開発センター（宮城県仙台市）
- Year and Date
  2016-03-05
- Invited
- Data Source
  KAKENHI-PROJECT-26870043
[Presentation] A Schottky barrier between SiC epitaxial layer and Al-C-Si alloy formed by dielectric breakdown of SiC MOS capacitor with aluminum electrode2016
- Author(s)
  Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa
- Organizer
  23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits
- Place of Presentation
  Marina Bay Sands, Singapole
- Year and Date
  2016-07-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870043
[Presentation] Poly-Si電極を用いたSiC MOSキャパシタの絶縁破壊後に見出した特徴的な破壊箇所2016
- Author(s)
  佐藤創志、山部紀久夫、遠藤哲郎、丹羽正昭
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理― (第21回研究会）
- Place of Presentation
  東レ総合研修センター（静岡県三島市）
- Year and Date
  2016-01-21
- Data Source
  KAKENHI-PROJECT-26870043
[Presentation] Poly-Si電極を用いたSiC MOSキャパシタの絶縁破壊後に見出した特徴的な破壊箇所2016
- Author(s)
  佐藤創志、山部紀久夫、遠藤哲郎、丹羽正昭
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第21回研究会)
- Place of Presentation
  東レ研修センター　三島(静岡)
- Year and Date
  2016-01-21
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] A shottky barrier between SiC epitaxial layer and Al-C-Si alloy formed by dielectric breakdown of SiC MOS capacitor with aluminum electrode2016
- Author(s)
  S. Sato, K. Yamabe, T. Endoh, M. Niwa
- Organizer
  23 rd International Symposium on the the Physical and Failure Analysis of Integrated Circuits
- Place of Presentation
  Manira Bay Sands, Singapore
- Year and Date
  2016-07-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Effect of Series Resistance on Dielectric Breakdown Phenomenon of Silicon Carbide MOS Capacitor2015
- Author(s)
  Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa
- Organizer
  22nd International Symposium on the Physical & Failure Analysis of Integrated Circuits
- Place of Presentation
  Lakeshore Hotel, Hsinchu, Taiwan
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870043
[Presentation] Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor2015
- Author(s)
  S. Sato, Y. Hiroi, K. Yamabe, M. Kitabatake, T. Endoh, M. Niwa
- Organizer
  22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
- Place of Presentation
  Lakeshore Hotel, Hsinchu (Republic of China)
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Failure Analysis of SiC MOS Capacitor with Poly‐Si Electrode2015
- Author(s)
  Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa
- Organizer
  International Conference on Silicon Carbide and Related Materials 2015
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870043
[Presentation] Failure analysis of SiC MOS capacitor with poly-Si gate electrode2015
- Author(s)
  S. Sato, K. Yamabe, T. Endoh, M. Niwa
- Organizer
  16th International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos (Italy)
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC熱酸化膜MOSキャパシタの絶縁破壊痕表面における炭素の挙動2014
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第61回春季応用物理学会学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC熱酸化膜MOS構造における特徴的な絶縁破壊痕の解析とモデル化2014
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  応用物理学会　薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会　─材料・プロセス・評価の物理─」（第19回研究会）
- Place of Presentation
  ニューウェルシティー湯河原
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] 熱酸化SiC MOSキャパシタの絶縁破壊痕の形状評価2013
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Carpet-Bombing-like Concaves on SiC MOS Capacitors Formed by Dielectric Breakdown2013
- Author(s)
  Soshi Sato, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, and Masaaki Niwa
- Organizer
  2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
- Place of Presentation
  University of Tsukuba, Tokyo Campus
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC MOSキャパシタのTZDB測定時動画撮影による絨毯爆撃状破壊痕形成メカニズムの解明
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学　湘南キャンパス(神奈川県　平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Effect of Series Resistance on Dielectric Breakdown Phenomenon of Silicon Carbide MOS Capacitor
- Author(s)
  S. Sato, Y. Hiroi, K. Yamabe, M. Kitabatake, T. Endoh and M. Niwa
- Organizer
  22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
- Place of Presentation
  Hsinchu Science Park, Hsinchu, Taiwan
- Year and Date
  2015-06-29 – 2015-07-02
- Data Source
  KAKENHI-PROJECT-26870043
[Presentation] SiC MOSキャパシタのTZDB測定時動画撮影による絨毯爆撃状破壊痕形成メカニズムの解明
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス (神奈川県平塚市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26870043

1. NIWA Masaaki (90608936)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
2. HASUNUMA Ryu (90372341)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. YAMABE Kikuo (10272171)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results

SATO Soshi 佐藤 創志

Research Projects

Research Products

Co-Researchers

ワイドギャップ半導体ＭＩＳ構造における絨毯爆撃状絶縁破壊痕形成モデルの新構築Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fundamental study of high-performance, low-power transistor by hetero interface formation

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor2016

Author(s)

Journal Title

Data Source

[Journal Article] Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors2014

Author(s)

Journal Title

NAID

Data Source

[Presentation] SiC MOSキャパシタに見られる絨毯爆撃状破壊痕2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] SiC MOSキャパシタに見られる絨毯爆撃状破壊痕2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] A Schottky barrier between SiC epitaxial layer and Al-C-Si alloy formed by dielectric breakdown of SiC MOS capacitor with aluminum electrode2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Poly-Si電極を用いたSiC MOSキャパシタの絶縁破壊後に見出した特徴的な破壊箇所2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Poly-Si電極を用いたSiC MOSキャパシタの絶縁破壊後に見出した特徴的な破壊箇所2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] A shottky barrier between SiC epitaxial layer and Al-C-Si alloy formed by dielectric breakdown of SiC MOS capacitor with aluminum electrode2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Effect of Series Resistance on Dielectric Breakdown Phenomenon of Silicon Carbide MOS Capacitor2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor2015

Author(s)

Organizer

SATO Soshi 佐藤創志