YOSHINO Junji 吉野淳二

Researcher Number	90158486
Other IDs
Affiliation (based on the past Project Information) *help	2011 – 2015: 東京工業大学, 理工学研究科, 教授 2012: 東京工業大学, 大学院・理工学研究科, 教授 2007 – 2008: Tokyo Institute of Technology, 大学院・理工学研究科, 教授 2005 – 2006: Graduate School of Science and Engineering, Professor, 大学院理工学研究科, 教授 2001 – 2005: 東京工業大学, 大学院・理工学研究科, 教授 … More 1993 – 2000: 東京工業大学, 理学部, 教授 1994: Tokyo Institute of Technology, Graduate School of Science and Engineering, Professor, 理工学研究科, 教授 1988 – 1992: 東京工業大学, 工学部, 助教授 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Science and Engineering / Applied materials science/Crystal engineering / Thin film/Surface and interfacial physical properties Except Principal Investigator Applied materials / Electronic materials/Electric materials / Science and Engineering / Science and Engineering
Keywords	Principal Investigator BEEM / BEES / GaMnAs / MnAs / GaAs(001)c(4x4) / 半導体 / CBE / スピントロニクス / STM / スピン依存トンネル現象 … More / scanning tunneling microscope / spin-dependent transport properties / tunneling magnetoresistance / magnetic semiconductors / semiconductor-magnetic materials nano-structures / III-V族希薄磁性半導体 / 磁性体ナノドット / スピン偏極電子 / スピン依存電気伝導 / GaAs(100) c(4x4) / 磁化誘起第2次高調波発生 / TMR構造 / 走査トンネル顕微鏡 / スピン依存輸送現象 / トンネル磁気抵抗 / 磁性半導体 / 磁性体ナノ構造 / magnetic-material heterostructures / Semiconductor / Ballistic electron emission microscopy / GaAs / Fe / LEED-IV解析 / GaAs(100) c(4x4)構造 / 半導体接合 / 強磁性金属 / 磁性体ヘテロ構造 / 弾道電子放出顕微鏡 / reflectance anisotropy spectroscopy / surface reaction / low energy electron diffraction / gallium arsenide / alloy semiconductor / surface optical nonlinearity / 表面清浄化 / ダイマー / 窒化 / 水素化 / 表面洗浄化 / 反射率差分光法 / 表面反応 / 低速電子線回折 / 砒化ガリウム / 化合物半導体 / 表面非線型光学効果 / in-situ Observation / Epitaxial Growth / Chemical Beam Epitaxy / Widegap Semiconductors / Chalcopyrite / その場観察 / エピタキシャル成長 / 化学ビーム成長法 / ワイドギャップ半導体 / カルコパイライト / 熱電効果 / バイポーラ拡散 / スピン流 / 熱電材料 / MEES / ハーフメタル / STS / スピンエレクトロニクス … More Except Principal Investigator スピン / 半導体 / 希薄磁性半導体 / 交換相互作用 / 半導体超構造 / 超構造 / Exchange interaction / 量子サイズ効果 / 強磁性体 / エピタキシャル成長 / II-VI族化合物半導体 / III-V族化合物半導体 / 走査トンネル顕微鏡 / 光励起脱離 / Carrier-induced ferromagnetism / exciton / Magentic ions / diluted magnetic semiconductor / spin / superstructures / Semiconductor nanostructures / キャリアー / ナノ構造 / キャリア誘起磁性 / 励起子 / 磁性イオン / Quantum size effect / ferromagnetic materials / epitaxial growth / II-VI compound semiconductors / III-V compound semiconductors / Electron spin / Semiconductor quantum structures / II-V族化合物半導体 / III-VI族化合物半導体 / Photoluminescence / delta-Doping / Metalorganic Chemical Vapor Deposition / Metalorganic Molecular Beam Deposition / Thulium / Zinc Sulfide / Electroluminescence / 有機金属気相成長 / フォトルミネッセンス / 原子層ド-ピング / 有機金属気相法 / 有機金属分子線法 / ツリウム / 硫化亜鉛 / エレクトロルミネッセンス / 微構造 / 原子尺度の制御 / リチウム電池 / スピン偏極電子銃 / 電子伝達 / 電池材料 / 触媒化学 / スピントロニクス / 化学反応 / 生体物質 / 光触媒 / イオン伝導 / スピン伝導 / 超低速ミュオン / スピン偏極正孔 / コンビナトリアル手法 / 高温強磁性 / トンネル磁気抵抗 / 再構成表面 / 量子ホール効果 / 超平坦表面 / 室温強磁性 / ファノ効果 / 電界効果デバイス / 二重交換相互作用 / キャリア抑制強磁性 / 磁気円二色性 / 近藤効果 / Fano効果 / 量子ドット / メゾスコピック系 / トンネル現象 / セラミックス / スピンエレクトロニクス / 希簿磁性半導体 / 化合物半導体 / 塩素吸着シリコン表面 / シリルラジカル / 吸着制御 / レーザードーピング / 紫外レーザー / フ-リエ変換型イオン分光器 / 飛行時間 / ラジカルによる膜成長表面反応 / SOR励起エッチング / 反応性イオンエッチング / 反応選択性 / 価電子励起に伴う表面反応 / 光励起誘起金属気相成長 / 単結晶Si異方性エッチング / 光CVD / SOR光エッチング / 表面吸着構造敏感 / 状態弁別測定 / 共鳴2光子イオン化 / 原子尺度 Less

Spin transport and catalytic reactions in the boundary regions
- Principal Investigator
  
  TORIKAI Eiko
- Project Period (FY)
  2011 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  University of Yamanashi
Spin-current generation based on ambipolar diffusion in magnetic materialsPrincipal Investigator
- Principal Investigator
  
  YOSHINO Junji
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
Observation and control of spin dependent transport phenomena in magnetic/non-magnetic semiconductor nanostructures by using BEEM/STM techniquesPrincipal Investigator
- Principal Investigator
  
  YOSHINO Junji
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tokyo Institute of Technology
スピントロニクス物性研究調整班
- Principal Investigator
  
  勝本信吾
- Project Period (FY)
  2002 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Extremely high-density doping of magnetic impurity in magnetic semiconductors and surface nano-structure preparation by controlling fundamental surface process during MBE growthPrincipal Investigator
- Principal Investigator
  
  YOSHINO Junji
- Project Period (FY)
  2002 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of technology
Study on magneto-transport properties of semiconductor/magnetic-material heterostructures by ballistic electron emission microscopyPrincipal Investigator
- Principal Investigator
  
  YOSHINO Junji
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
スピン制御による半導体超構造の新展開
- Principal Investigator
  
  大野英男 (大野秀男)
- Project Period (FY)
  2000
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Tohoku University
Fabrication of Spin Controlled Semiconductor Superstructures
- Principal Investigator
  
  OKA Yasuo
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tohoku University
スピン制御による半導体超構造の新展開
- Principal Investigator
  
  OHNO Hideo
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Physics and Application of Spin-Related Phenomena in Semiconductors
- Principal Investigator
  
  OHNO Hideo
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
Development on in-situ observation techniques for surface reaction process under hydrogen atmosphere related to alloy semiconductorsPrincipal Investigator
- Principal Investigator
  
  YOSHINO Junji
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
Chemical Beam Epitaxy of Chalcopyrite SemiconductorsPrincipal Investigator
- Principal Investigator
  
  YOSHINO Junji
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
表面反応の研究
- Principal Investigator
  
  村田好正
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
表面反応の研究
- Principal Investigator
  
  村田好正
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
表面反応の研究
- Principal Investigator
  
  村田好正
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
半導体の原子尺度での制御に関する研究
- Principal Investigator
  
  伊藤良一
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The University of Tokyo
Development of Blue-Emitting EL devices with High Color-Purity and Brightness
- Principal Investigator
  
  KUKIMOTO Hiroshi
- Project Period (FY)
  1989 – 1991
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  Applied materials
- Research Institution
  Tokyo Institute of Technology
半導体の原子尺度での制御に関する研究
- Principal Investigator
  
  伊藤良一
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The University of Tokyo

All 2015 2014 2013 2012 2011 2009 2008 2007 2006 2004 2003 2002

All Journal Article Presentation

[Journal Article] Magnetic anisotropy constants and anisotropic magneto-resistance in GaMnAs depending on layer thickness2014
- Author(s)
  D. Nozaki, S. Kaku, and J. Yoshino
- Journal Title
  
  Journal of Physical Society of Japan: Conference Proceedings
  
  Volume: 印刷中
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-23108003
[Journal Article] STM observation of MnAs initial growth surface on GaAs(001)-c(4×4)α and 6×6 reconstructions2013
- Author(s)
  Masahiro Hiraoka, Junji Yoshino et al.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in press Pages: 397-399
- DOI
  10.1016/j.jcrysgro.2012.12.084
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-23108003
[Journal Article] Initial growth mechanism of Mn and MnAs on GaAs c(4×4)reconstructed surfaces2009
- Author(s)
  D. Komamiya J. Okabayashi, and J. Yoshino
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2135-2138
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360021
[Journal Article] Size control of nanoscaled MnAs dots fabricates on sulfu-passivated GaAs(001)2008
- Author(s)
  J. Okabayashi, Y. Ueno, and J. Yoshino
- Journal Title
  
  Physica status solidi C
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360021
[Journal Article] Initial growth of MnAs on GaAs(001)-c(4×4)reconstructed surface2007
- Author(s)
  T. Arai, M. Suzuki, J. Okabayashi, and J. Yoshino
- Journal Title
  
  Physica E 40
  
  Pages: 332-334
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360021
[Journal Article] Structure transition between two GaAs(001)-c(4x4)surface reconstruction in As4 flux2007
- Author(s)
  T. Arai, M. Suzuki, J. Okabayashi, and J. Yoshino
- Journal Title
  
  J. Crystal Growth
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360021
[Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004
- Author(s)
  A.Nagashima, A.Nishimura, T.Kawakami, J.Yoshino
- Journal Title
  
  Surface Science 564
  
  Pages: 218-224
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450009
[Journal Article] Carrier-density dependence of magnetic and magneto-optical properties of (Ga, Mn)As2003
- Author(s)
  T.Komori, T.Ishikawa, T.Kuroda, J.Yoshino, F.Minami, S.Koshihara
- Journal Title
  
  Physical Review B67
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450009
[Journal Article] STM and RHEED studies on low-temperature growth of GaAs(001)2002
- Author(s)
  A.Nagashima, M.Tazima, A.Nishimura, Y.Takagi, J.Yoshino
- Journal Title
  
  Surface Science 514
  
  Pages: 350-355
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450009
[Journal Article] Formation of iron silicide nanodots on Si(111)-Ag2002
- Author(s)
  Y.Takagi, A.Nishimura, A.Nagashima, J.Yoshino
- Journal Title
  
  Surface Science 514
  
  Pages: 167-171
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450009
[Presentation] X-STM measurements of band bending across GaAs/AlAs heterojunction2015
- Author(s)
  S. Kaku, M. Tsukui, T. Ando, and J. Yoshino
- Organizer
  17th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  仙台国際センター（宮城県・仙台市）
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] X-STM observation on (110) surface of AlSb/InAs/GaSb/AlSb hetero-structure2015
- Author(s)
  T. Ando, S. Kaku, M. Tsukui, and J. Yoshino
- Organizer
  17th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  仙台国際センター（宮城県・仙台市）
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] UHV-STMによるAu(111)基板上の自己組織化Crナノ構造の観察2013
- Author(s)
  加来　滋、吉野淳二
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学（神奈川県）
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] GaMnAs/InGaAs/GaMnAs MTJ のトンネルスペクトルによるGaMnAsの電子構造の解明2013
- Author(s)
  古川直寛,新井亮,加来滋,吉野淳二
- Organizer
  第60回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23656012
[Presentation] GaMnAs/InGaAs/GaMnAs MTJのトンネルスペクトルによるGaMnAsの電子構造の解明2013
- Author(s)
  古川直寛、吉野淳二
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学（神奈川県）
- Year and Date
  2013-03-27
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] 磁性/非磁性ヘテロ界面におけるスピン状態の原子レベル観測2012
- Author(s)
  吉野淳二
- Organizer
  新学術領域「超低速ミュオン顕微鏡が拓く物質・生命・素粒子科学のフロンティア」第1回領域会議
- Place of Presentation
  ホテル春日居(笛吹市)
- Year and Date
  2012-01-08
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] Au(111)表面上での新規細線構造の作製とSTMによる特性評価2012
- Author(s)
  加来滋、吉野淳二, 他
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] ジグザグ鎖を有するNaCr2O4の中性子散乱とmSRによる磁気構造解析2012
- Author(s)
  野崎洋、吉野淳二, 他
- Organizer
  日本物理学会第67回年次大会
- Place of Presentation
  関西学院大学
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] UHV-STMによるAu(111)基板上の自己組織化Crナノ構造の観察2012
- Author(s)
  加来　滋,　吉野淳二
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学（愛媛県）
- Year and Date
  2012-09-14
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] MnAs初期成長のGaAs(001)基板表面再構成依存性2012
- Author(s)
  平岡聖啓, 吉野淳二
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学（愛媛県）
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] Novel self-assembled nanostructures observed on Cr-deposited Au(111)2012
- Author(s)
  Shigeru Kaku, Junji Yoshino
- Organizer
  The 17th International Conference on Molecular
- Place of Presentation
  奈良県新公会堂（奈良県）
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] STM observation of initial growth surface of MnAs on GaAs(001)2012
- Author(s)
  Masahiro Hiraoka, Junji Yoshino
- Organizer
  The 17th International Conference on Molecular
- Place of Presentation
  奈良県新公会堂（奈良県）
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] GaMnAs におけるスピンゼーベック効果の観測2012
- Author(s)
  竹内祐太、加来滋、吉野淳二
- Organizer
  第59回応用物理関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Data Source
  KAKENHI-PROJECT-23656012
[Presentation] GaAs(001)-c(4×4)α表面上の低温GaAs成長表面のSTM観察2012
- Author(s)
  小野文照、吉野淳二, 他
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] GaMnAsの異方性磁気抵抗の膜厚依存性2012
- Author(s)
  野崎大樹, 吉野淳二
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学（愛媛県）
- Year and Date
  2012-09-14
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] GaMnAsの異方性磁気抵抗の膜厚依存性2012
- Author(s)
  野崎大樹,堀井達哉,加来滋,吉野淳二
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛大学)
- Data Source
  KAKENHI-PROJECT-23656012
[Presentation] GaMnAsの磁気異方性と異方性磁気抵抗の膜厚依存性2012
- Author(s)
  野崎大樹,堀井達哉,加来滋,吉野淳二
- Organizer
  第17回半導体スピン工学の基礎と応用(PASPS-17)
- Place of Presentation
  九州大学(福岡県)
- Data Source
  KAKENHI-PROJECT-23656012
[Presentation] GaMnAsにおけるスピンゼーベック効果の観測2011
- Author(s)
  竹内祐太、加来滋、吉野淳二
- Organizer
  第16回半導体スピン工学の基礎と応用(PASPS-16)
- Place of Presentation
  東京工業大学(東京都)
- Year and Date
  2011-11-28
- Data Source
  KAKENHI-PROJECT-23656012
[Presentation] GaMnAs-MTJの高周波磁場応答2011
- Author(s)
  徳平弘毅、吉野淳二, 他
- Organizer
  The 16th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
- Place of Presentation
  東京工業大学(東京都)
- Year and Date
  2011-11-28
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] GaAs(001)を基板としたCr薄膜の表面構造2011
- Author(s)
  加来滋、吉野淳二, 他
- Organizer
  The 16th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
- Place of Presentation
  東京工業大学(東京都)
- Year and Date
  2011-11-28
- Data Source
  KAKENHI-PLANNED-23108003
[Presentation] 吉野淳二GaAs(001)c(4×4)α再構成表面へのMn吸着過程2008
- Author(s)
  駒宮大介, 植野友理子, 岡林潤, 吉野淳二
- Organizer
  応用物理学会第55回応用物理学関係連合講演会
- Place of Presentation
  日大船橋
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] Initial growth mechanism of Mn and MnAs on GaAs c(4×4)reconstructed surfacesa2008
- Author(s)
  D. Komamiya T. Arai, J. Okabayashi, and J. Yoshino
- Organizer
  27th Electronic Materials Symposium
- Place of Presentation
  Izu, Shizuoka
- Year and Date
  2008-07-11
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] 硫黄蒸気処理による硫黄終端GaAs(001)面上に形成したMnAsナノドットのSTM/STS2008
- Author(s)
  植野友理子, 荒井俊昭, 岡林潤, 吉野淳二
- Organizer
  応用物理学会第55回応用物理学関係連合講演会
- Place of Presentation
  日大船橋
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] Mn deposition on GaAs(001)-c(4×4)α reconstructed surfaces, Ascanning-tunneling-microscopy study2008
- Author(s)
  D. Komamiya, J. Okabayashi, and J. Yoshino
- Organizer
  15th International conference on molecular beam epitaxy
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2008-08-05
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] Shape control in nanoscaled MnAs dots on sulfur-passivated GaAs(001)2007
- Author(s)
  Y. Ueno, T. Arai, J. Okabayashi and J. Yoshino
- Organizer
  26th Electronic Materials Symposium
- Place of Presentation
  Shiga
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] Morphology and local electronic properties in nanoscaled MnAs dots on sulfur-passivated GaAs(001)2007
- Author(s)
  J. Okabayashi, T. Arai, Y. Ueno, and J. Yoshino
- Organizer
  第12回「半導体スピン工学の基礎と応用」研究会
- Place of Presentation
  大阪
- Year and Date
  2007-12-20
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] Surface Phase Transition Triggered by MnAs Deposition on GaAs(001)c(4x4)2007
- Author(s)
  J. Okabayashi. Y. Ueno, and J. Yoshino
- Organizer
  The 34th International conference on Compound Semiconductors
- Place of Presentation
  Kyoto
- Year and Date
  2007-10-15
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] Anomalous behavior in MnAs initial growth on GaAs(001)-c(4×4)reconstructed surface2007
- Author(s)
  T. Arai, Y. Ueno, M. Suzuki, J. Okabayashi, and J. Yoshino
- Organizer
  Second International Symposium on Nanometer-Scale Quantum Physics
- Place of Presentation
  Tokyo
- Year and Date
  2007-01-24
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] GaAs(001)上へのMnAsの界面形成過程の観察2007
- Author(s)
  荒井俊昭、岡林潤、植野友理子、吉野淳二
- Organizer
  日本物理学会春季大会
- Place of Presentation
  鹿児島大学
- Year and Date
  2007-03-18
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] GaAs(001)面上に形成したMnAsナノドットのSTM/STS観測2007
- Author(s)
  植野友理子, 岡林潤, 吉野淳二
- Organizer
  応用物理学会第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] Structure transition between two GaAs(001)-c(4x4)surface reconstructions in As4 flux2006
- Author(s)
  T. Arai, M. Suzuki, Y. Ueno, J. Okabayashi, and J. Yoshino
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo
- Year and Date
  2006-09-03
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] Initial growth of MnAs on GaAs(001)-c(4×4)reconstructed surfaces2006
- Author(s)
  T. Arai, M. Suzuki, Y. Ueno, J. Okabayashi, and J. Yoshino
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo
- Year and Date
  2006-09-03
- Data Source
  KAKENHI-PROJECT-18360021
[Presentation] Initial-growth observation of MnAs on GaAs(001)and(111)B surface2006
- Author(s)
  T. Arai, Y. Ueno, M. Suzuki, J. Okabayashi and J. Yoshino
- Organizer
  25th Electronic Materials Symposium
- Place of Presentation
  伊豆長岡
- Year and Date
  2006-07-05
- Data Source
  KAKENHI-PROJECT-18360021

1. MUNEKATA Hiroo (60270922)

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2. TEKEYAMA Shyojirou (20163446)

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3. OHNO Hideo (00152215)

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4. YOSHIDA Hiroshi (30133929)

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8. IYE Yasuhiro (30125984)

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9. OKA Yasuo (60013520)

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16. 川崎三津夫 (50111927)

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17. TORIKAI Eiko (20188832)

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23. NIIMURA Nobuo (50004453)

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24. JIN Xiuguang (20594055)

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25. MAEKAWA Sadamichi (60005973)

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26. WATANABE Masahiro (00020412)

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27. KANAYA Toshiji (20152788)

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28. KANNO Ryoji (90135426)

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29. TSUNEYUKI Shinji (90197749)

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30. KASAI Hideaki (00177354)

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31. NAKANISHI Hiroshi (40237326)

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32. IKEDA Shoji (90281865)

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33. NOZAKI Hiroshi (90394890)

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34. HARADA Masashi (60394839)

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35. KOSAKA Yusuke (60406832)

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36. KAWAURA Hiroaki (80394592)

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37. KUSUNOKI Masami (90135749)

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38. KUKIMOTO Hiroshi (50013488)

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39. HARA Kazuhiko (80202266)

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40. NAKAYAMA Hiroshi (30164370)

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41. FUJIO Minami (30200083)

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42. OGAWA Yoshihiro (50372462)

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52. Amba Datt Pant

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YOSHINO Junji 吉野 淳二

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Spin-current generation based on ambipolar diffusion in magnetic materialsPrincipal Investigator

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Observation and control of spin dependent transport phenomena in magnetic/non-magnetic semiconductor nanostructures by using BEEM/STM techniquesPrincipal Investigator

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Extremely high-density doping of magnetic impurity in magnetic semiconductors and surface nano-structure preparation by controlling fundamental surface process during MBE growthPrincipal Investigator

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Study on magneto-transport properties of semiconductor/magnetic-material heterostructures by ballistic electron emission microscopyPrincipal Investigator

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Development on in-situ observation techniques for surface reaction process under hydrogen atmosphere related to alloy semiconductorsPrincipal Investigator

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Chemical Beam Epitaxy of Chalcopyrite SemiconductorsPrincipal Investigator

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YOSHINO Junji 吉野淳二