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YOSHINO Junji  吉野 淳二

ORCIDConnect your ORCID iD *help
Researcher Number 90158486
Other IDs
Affiliation (based on the past Project Information) *help 2011 – 2015: 東京工業大学, 理工学研究科, 教授
2012: 東京工業大学, 大学院・理工学研究科, 教授
2007 – 2008: Tokyo Institute of Technology, 大学院・理工学研究科, 教授
2005 – 2006: Graduate School of Science and Engineering, Professor, 大学院理工学研究科, 教授
2001 – 2005: 東京工業大学, 大学院・理工学研究科, 教授 … More
1993 – 2000: 東京工業大学, 理学部, 教授
1994: Tokyo Institute of Technology, Graduate School of Science and Engineering, Professor, 理工学研究科, 教授
1988 – 1992: 東京工業大学, 工学部, 助教授 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Science and Engineering / Applied materials science/Crystal engineering / Thin film/Surface and interfacial physical properties
Except Principal Investigator
Applied materials / Electronic materials/Electric materials / Science and Engineering / Science and Engineering
Keywords
Principal Investigator
BEEM / BEES / GaMnAs / MnAs / GaAs(001)c(4x4) / 半導体 / CBE / スピントロニクス / STM / スピン依存トンネル現象 … More / scanning tunneling microscope / spin-dependent transport properties / tunneling magnetoresistance / magnetic semiconductors / semiconductor-magnetic materials nano-structures / III-V族希薄磁性半導体 / 磁性体ナノドット / スピン偏極電子 / スピン依存電気伝導 / GaAs(100) c(4x4) / 磁化誘起第2次高調波発生 / TMR構造 / 走査トンネル顕微鏡 / スピン依存輸送現象 / トンネル磁気抵抗 / 磁性半導体 / 磁性体ナノ構造 / magnetic-material heterostructures / Semiconductor / Ballistic electron emission microscopy / GaAs / Fe / LEED-IV解析 / GaAs(100) c(4x4)構造 / 半導体接合 / 強磁性金属 / 磁性体ヘテロ構造 / 弾道電子放出顕微鏡 / reflectance anisotropy spectroscopy / surface reaction / low energy electron diffraction / gallium arsenide / alloy semiconductor / surface optical nonlinearity / 表面清浄化 / ダイマー / 窒化 / 水素化 / 表面洗浄化 / 反射率差分光法 / 表面反応 / 低速電子線回折 / 砒化ガリウム / 化合物半導体 / 表面非線型光学効果 / in-situ Observation / Epitaxial Growth / Chemical Beam Epitaxy / Widegap Semiconductors / Chalcopyrite / その場観察 / エピタキシャル成長 / 化学ビーム成長法 / ワイドギャップ半導体 / カルコパイライト / 熱電効果 / バイポーラ拡散 / スピン流 / 熱電材料 / MEES / ハーフメタル / STS / スピンエレクトロニクス … More
Except Principal Investigator
スピン / 半導体 / 希薄磁性半導体 / 交換相互作用 / 半導体超構造 / 超構造 / Exchange interaction / 量子サイズ効果 / 強磁性体 / エピタキシャル成長 / II-VI族化合物半導体 / III-V族化合物半導体 / 走査トンネル顕微鏡 / 光励起脱離 / Carrier-induced ferromagnetism / exciton / Magentic ions / diluted magnetic semiconductor / spin / superstructures / Semiconductor nanostructures / キャリアー / ナノ構造 / キャリア誘起磁性 / 励起子 / 磁性イオン / Quantum size effect / ferromagnetic materials / epitaxial growth / II-VI compound semiconductors / III-V compound semiconductors / Electron spin / Semiconductor quantum structures / II-V族化合物半導体 / III-VI族化合物半導体 / Photoluminescence / delta-Doping / Metalorganic Chemical Vapor Deposition / Metalorganic Molecular Beam Deposition / Thulium / Zinc Sulfide / Electroluminescence / 有機金属気相成長 / フォトルミネッセンス / 原子層ド-ピング / 有機金属気相法 / 有機金属分子線法 / ツリウム / 硫化亜鉛 / エレクトロルミネッセンス / 微構造 / 原子尺度の制御 / リチウム電池 / スピン偏極電子銃 / 電子伝達 / 電池材料 / 触媒化学 / スピントロニクス / 化学反応 / 生体物質 / 光触媒 / イオン伝導 / スピン伝導 / 超低速ミュオン / スピン偏極正孔 / コンビナトリアル手法 / 高温強磁性 / トンネル磁気抵抗 / 再構成表面 / 量子ホール効果 / 超平坦表面 / 室温強磁性 / ファノ効果 / 電界効果デバイス / 二重交換相互作用 / キャリア抑制強磁性 / 磁気円二色性 / 近藤効果 / Fano効果 / 量子ドット / メゾスコピック系 / トンネル現象 / セラミックス / スピンエレクトロニクス / 希簿磁性半導体 / 化合物半導体 / 塩素吸着シリコン表面 / シリルラジカル / 吸着制御 / レーザードーピング / 紫外レーザー / フ-リエ変換型イオン分光器 / 飛行時間 / ラジカルによる膜成長表面反応 / SOR励起エッチング / 反応性イオンエッチング / 反応選択性 / 価電子励起に伴う表面反応 / 光励起誘起金属気相成長 / 単結晶Si異方性エッチング / 光CVD / SOR光エッチング / 表面吸着構造敏感 / 状態弁別測定 / 共鳴2光子イオン化 / 原子尺度 Less
  • Research Projects

    (18 results)
  • Research Products

    (43 results)
  • Co-Researchers

    (52 People)
  •  Spin transport and catalytic reactions in the boundary regions

    • Principal Investigator
      TORIKAI Eiko
    • Project Period (FY)
      2011 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      University of Yamanashi
  •  Spin-current generation based on ambipolar diffusion in magnetic materialsPrincipal Investigator

    • Principal Investigator
      YOSHINO Junji
    • Project Period (FY)
      2011 – 2012
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
  •  Observation and control of spin dependent transport phenomena in magnetic/non-magnetic semiconductor nanostructures by using BEEM/STM techniquesPrincipal Investigator

    • Principal Investigator
      YOSHINO Junji
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Tokyo Institute of Technology
  •  スピントロニクス物性研究調整班

    • Principal Investigator
      勝本 信吾
    • Project Period (FY)
      2002 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Extremely high-density doping of magnetic impurity in magnetic semiconductors and surface nano-structure preparation by controlling fundamental surface process during MBE growthPrincipal Investigator

    • Principal Investigator
      YOSHINO Junji
    • Project Period (FY)
      2002 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Tokyo Institute of technology
  •  Study on magneto-transport properties of semiconductor/magnetic-material heterostructures by ballistic electron emission microscopyPrincipal Investigator

    • Principal Investigator
      YOSHINO Junji
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
  •  スピン制御による半導体超構造の新展開

    • Principal Investigator
      大野 英男 (大野 秀男)
    • Project Period (FY)
      2000
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Tohoku University
  •  Fabrication of Spin Controlled Semiconductor Superstructures

    • Principal Investigator
      OKA Yasuo
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tohoku University
  •  スピン制御による半導体超構造の新展開

    • Principal Investigator
      OHNO Hideo
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University
  •  Physics and Application of Spin-Related Phenomena in Semiconductors

    • Principal Investigator
      OHNO Hideo
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOHOKU UNIVERSITY
  •  Development on in-situ observation techniques for surface reaction process under hydrogen atmosphere related to alloy semiconductorsPrincipal Investigator

    • Principal Investigator
      YOSHINO Junji
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
  •  Chemical Beam Epitaxy of Chalcopyrite SemiconductorsPrincipal Investigator

    • Principal Investigator
      YOSHINO Junji
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
  •  表面反応の研究

    • Principal Investigator
      村田 好正
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  表面反応の研究

    • Principal Investigator
      村田 好正
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  表面反応の研究

    • Principal Investigator
      村田 好正
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  半導体の原子尺度での制御に関する研究

    • Principal Investigator
      伊藤 良一
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The University of Tokyo
  •  Development of Blue-Emitting EL devices with High Color-Purity and Brightness

    • Principal Investigator
      KUKIMOTO Hiroshi
    • Project Period (FY)
      1989 – 1991
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      Applied materials
    • Research Institution
      Tokyo Institute of Technology
  •  半導体の原子尺度での制御に関する研究

    • Principal Investigator
      伊藤 良一
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The University of Tokyo

All 2015 2014 2013 2012 2011 2009 2008 2007 2006 2004 2003 2002

All Journal Article Presentation

  • [Journal Article] Magnetic anisotropy constants and anisotropic magneto-resistance in GaMnAs depending on layer thickness2014

    • Author(s)
      D. Nozaki, S. Kaku, and J. Yoshino
    • Journal Title

      Journal of Physical Society of Japan: Conference Proceedings

      Volume: 印刷中

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Journal Article] STM observation of MnAs initial growth surface on GaAs(001)-c(4×4)α and 6×6 reconstructions2013

    • Author(s)
      Masahiro Hiraoka, Junji Yoshino et al.
    • Journal Title

      Journal of Crystal Growth

      Volume: in press Pages: 397-399

    • DOI

      10.1016/j.jcrysgro.2012.12.084

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Journal Article] Initial growth mechanism of Mn and MnAs on GaAs c(4×4)reconstructed surfaces2009

    • Author(s)
      D. Komamiya J. Okabayashi, and J. Yoshino
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2135-2138

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Journal Article] Size control of nanoscaled MnAs dots fabricates on sulfu-passivated GaAs(001)2008

    • Author(s)
      J. Okabayashi, Y. Ueno, and J. Yoshino
    • Journal Title

      Physica status solidi C

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Journal Article] Initial growth of MnAs on GaAs(001)-c(4×4)reconstructed surface2007

    • Author(s)
      T. Arai, M. Suzuki, J. Okabayashi, and J. Yoshino
    • Journal Title

      Physica E 40

      Pages: 332-334

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Journal Article] Structure transition between two GaAs(001)-c(4x4)surface reconstruction in As4 flux2007

    • Author(s)
      T. Arai, M. Suzuki, J. Okabayashi, and J. Yoshino
    • Journal Title

      J. Crystal Growth

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004

    • Author(s)
      A.Nagashima, A.Nishimura, T.Kawakami, J.Yoshino
    • Journal Title

      Surface Science 564

      Pages: 218-224

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450009
  • [Journal Article] Carrier-density dependence of magnetic and magneto-optical properties of (Ga, Mn)As2003

    • Author(s)
      T.Komori, T.Ishikawa, T.Kuroda, J.Yoshino, F.Minami, S.Koshihara
    • Journal Title

      Physical Review B67

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450009
  • [Journal Article] STM and RHEED studies on low-temperature growth of GaAs(001)2002

    • Author(s)
      A.Nagashima, M.Tazima, A.Nishimura, Y.Takagi, J.Yoshino
    • Journal Title

      Surface Science 514

      Pages: 350-355

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450009
  • [Journal Article] Formation of iron silicide nanodots on Si(111)-Ag2002

    • Author(s)
      Y.Takagi, A.Nishimura, A.Nagashima, J.Yoshino
    • Journal Title

      Surface Science 514

      Pages: 167-171

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450009
  • [Presentation] X-STM measurements of band bending across GaAs/AlAs heterojunction2015

    • Author(s)
      S. Kaku, M. Tsukui, T. Ando, and J. Yoshino
    • Organizer
      17th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      仙台国際センター(宮城県・仙台市)
    • Year and Date
      2015-07-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] X-STM observation on (110) surface of AlSb/InAs/GaSb/AlSb hetero-structure2015

    • Author(s)
      T. Ando, S. Kaku, M. Tsukui, and J. Yoshino
    • Organizer
      17th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      仙台国際センター(宮城県・仙台市)
    • Year and Date
      2015-07-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] UHV-STMによるAu(111)基板上の自己組織化Crナノ構造の観察2013

    • Author(s)
      加来 滋、吉野淳二
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Year and Date
      2013-03-29
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] GaMnAs/InGaAs/GaMnAs MTJ のトンネルスペク トルによるGaMnAsの電子構造の解明2013

    • Author(s)
      古川直寛,新井亮,加来滋,吉野淳二
    • Organizer
      第60回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23656012
  • [Presentation] GaMnAs/InGaAs/GaMnAs MTJのトンネルスペクトルによるGaMnAsの電子構造の解明2013

    • Author(s)
      古川直寛、吉野淳二
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Year and Date
      2013-03-27
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] 磁性/非磁性ヘテロ界面におけるスピン状態の原子レベル観測2012

    • Author(s)
      吉野淳二
    • Organizer
      新学術領域「超低速ミュオン顕微鏡が拓く物質・生命・素粒子科学のフロンティア」第1回領域会議
    • Place of Presentation
      ホテル春日居(笛吹市)
    • Year and Date
      2012-01-08
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] Au(111)表面上での新規細線構造の作製とSTMによる特性評価2012

    • Author(s)
      加来滋、吉野淳二, 他
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] ジグザグ鎖を有するNaCr2O4の中性子散乱とmSRによる磁気構造解析2012

    • Author(s)
      野崎洋、吉野淳二, 他
    • Organizer
      日本物理学会第67回年次大会
    • Place of Presentation
      関西学院大学
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] UHV-STMによるAu(111)基板上の自己組織化Crナノ構造の観察2012

    • Author(s)
      加来 滋, 吉野淳二
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-14
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] MnAs初期成長のGaAs(001)基板表面再構成依存性2012

    • Author(s)
      平岡聖啓, 吉野淳二
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-12
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] Novel self-assembled nanostructures observed on Cr-deposited Au(111)2012

    • Author(s)
      Shigeru Kaku, Junji Yoshino
    • Organizer
      The 17th International Conference on Molecular
    • Place of Presentation
      奈良県新公会堂(奈良県)
    • Year and Date
      2012-09-24
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] STM observation of initial growth surface of MnAs on GaAs(001)2012

    • Author(s)
      Masahiro Hiraoka, Junji Yoshino
    • Organizer
      The 17th International Conference on Molecular
    • Place of Presentation
      奈良県新公会堂(奈良県)
    • Year and Date
      2012-09-24
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] GaMnAs におけるスピンゼーベック効果の観測2012

    • Author(s)
      竹内祐太、加来滋、吉野淳二
    • Organizer
      第59回応用物理関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Data Source
      KAKENHI-PROJECT-23656012
  • [Presentation] GaAs(001)-c(4×4)α表面上の低温GaAs成長表面のSTM観察2012

    • Author(s)
      小野文照、吉野淳二, 他
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] GaMnAsの異方性磁気抵抗の膜厚依存性2012

    • Author(s)
      野崎大樹, 吉野淳二
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-14
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] GaMnAsの異方性磁気抵抗の膜厚依存性2012

    • Author(s)
      野崎大樹,堀井達哉,加来滋,吉野淳二
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛大学)
    • Data Source
      KAKENHI-PROJECT-23656012
  • [Presentation] GaMnAsの磁気異方性と異方性磁気抵抗の膜 厚依存性2012

    • Author(s)
      野崎大樹,堀井達哉,加来滋,吉野淳二
    • Organizer
      第17回半導体スピン工学の基礎と応用(PASPS-17)
    • Place of Presentation
      九州大学(福岡県)
    • Data Source
      KAKENHI-PROJECT-23656012
  • [Presentation] GaMnAsにおけるスピンゼーベック効果の観測2011

    • Author(s)
      竹内祐太、加来滋、吉野淳二
    • Organizer
      第16回半導体スピン工学の基礎と応用(PASPS-16)
    • Place of Presentation
      東京工業大学(東京都)
    • Year and Date
      2011-11-28
    • Data Source
      KAKENHI-PROJECT-23656012
  • [Presentation] GaMnAs-MTJの高周波磁場応答2011

    • Author(s)
      徳平弘毅、吉野淳二, 他
    • Organizer
      The 16th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
    • Place of Presentation
      東京工業大学(東京都)
    • Year and Date
      2011-11-28
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] GaAs(001)を基板としたCr薄膜の表面構造2011

    • Author(s)
      加来滋、吉野淳二, 他
    • Organizer
      The 16th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
    • Place of Presentation
      東京工業大学(東京都)
    • Year and Date
      2011-11-28
    • Data Source
      KAKENHI-PLANNED-23108003
  • [Presentation] 吉野淳二GaAs(001)c(4×4)α再構成表面へのMn吸着過程2008

    • Author(s)
      駒宮大介, 植野友理子, 岡林潤, 吉野淳二
    • Organizer
      応用物理学会第55回応用物理学関係連合講演会
    • Place of Presentation
      日大船橋
    • Year and Date
      2008-03-28
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] Initial growth mechanism of Mn and MnAs on GaAs c(4×4)reconstructed surfacesa2008

    • Author(s)
      D. Komamiya T. Arai, J. Okabayashi, and J. Yoshino
    • Organizer
      27th Electronic Materials Symposium
    • Place of Presentation
      Izu, Shizuoka
    • Year and Date
      2008-07-11
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] 硫黄蒸気処理による硫黄終端GaAs(001)面上に形成したMnAsナノドットのSTM/STS2008

    • Author(s)
      植野友理子, 荒井俊昭, 岡林潤, 吉野淳二
    • Organizer
      応用物理学会第55回応用物理学関係連合講演会
    • Place of Presentation
      日大船橋
    • Year and Date
      2008-03-28
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] Mn deposition on GaAs(001)-c(4×4)α reconstructed surfaces, Ascanning-tunneling-microscopy study2008

    • Author(s)
      D. Komamiya, J. Okabayashi, and J. Yoshino
    • Organizer
      15th International conference on molecular beam epitaxy
    • Place of Presentation
      Vancouver, Canada
    • Year and Date
      2008-08-05
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] Shape control in nanoscaled MnAs dots on sulfur-passivated GaAs(001)2007

    • Author(s)
      Y. Ueno, T. Arai, J. Okabayashi and J. Yoshino
    • Organizer
      26th Electronic Materials Symposium
    • Place of Presentation
      Shiga
    • Year and Date
      2007-07-05
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] Morphology and local electronic properties in nanoscaled MnAs dots on sulfur-passivated GaAs(001)2007

    • Author(s)
      J. Okabayashi, T. Arai, Y. Ueno, and J. Yoshino
    • Organizer
      第12回「半導体スピン工学の基礎と応用」研究会
    • Place of Presentation
      大阪
    • Year and Date
      2007-12-20
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] Surface Phase Transition Triggered by MnAs Deposition on GaAs(001)c(4x4)2007

    • Author(s)
      J. Okabayashi. Y. Ueno, and J. Yoshino
    • Organizer
      The 34th International conference on Compound Semiconductors
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-10-15
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] Anomalous behavior in MnAs initial growth on GaAs(001)-c(4×4)reconstructed surface2007

    • Author(s)
      T. Arai, Y. Ueno, M. Suzuki, J. Okabayashi, and J. Yoshino
    • Organizer
      Second International Symposium on Nanometer-Scale Quantum Physics
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-01-24
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] GaAs(001)上へのMnAsの界面形成過程の観察2007

    • Author(s)
      荒井俊昭、岡林潤、植野友理子、吉野淳二
    • Organizer
      日本物理学会春季大会
    • Place of Presentation
      鹿児島大学
    • Year and Date
      2007-03-18
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] GaAs(001)面上に形成したMnAsナノドットのSTM/STS観測2007

    • Author(s)
      植野友理子, 岡林潤, 吉野淳二
    • Organizer
      応用物理学会第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Year and Date
      2007-09-08
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] Structure transition between two GaAs(001)-c(4x4)surface reconstructions in As4 flux2006

    • Author(s)
      T. Arai, M. Suzuki, Y. Ueno, J. Okabayashi, and J. Yoshino
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      2006-09-03
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] Initial growth of MnAs on GaAs(001)-c(4×4)reconstructed surfaces2006

    • Author(s)
      T. Arai, M. Suzuki, Y. Ueno, J. Okabayashi, and J. Yoshino
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo
    • Year and Date
      2006-09-03
    • Data Source
      KAKENHI-PROJECT-18360021
  • [Presentation] Initial-growth observation of MnAs on GaAs(001)and(111)B surface2006

    • Author(s)
      T. Arai, Y. Ueno, M. Suzuki, J. Okabayashi and J. Yoshino
    • Organizer
      25th Electronic Materials Symposium
    • Place of Presentation
      伊豆長岡
    • Year and Date
      2006-07-05
    • Data Source
      KAKENHI-PROJECT-18360021
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