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Shimura Takayoshi  志村 考功

ORCIDConnect your ORCID iD *help
… Alternative Names

TAKAYOSHI Shimura  志村 考功

志村 孝功  シムラ タカヨシ

SHIMURA Takayoshi  志村 考功

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Researcher Number 90252600
Other IDs
External Links
Affiliation (Current) 2025: 早稲田大学, 理工学術院(情報生産システム研究科・センター), 教授(任期付)
Affiliation (based on the past Project Information) *help 2024: 早稲田大学, 理工学術院(情報生産システム研究科・センター), 教授(任期付)
2022 – 2023: 大阪大学, 大学院工学研究科, 准教授
2016 – 2019: 大阪大学, 工学研究科, 准教授
2016 – 2017: 大阪大学, 大学院工学研究科, 准教授
2013 – 2015: 大阪大学, 工学(系)研究科(研究院), 准教授 … More
2014: 大阪大学, 大学院工学研究科, 准教授
2014: 大阪大学, 工学研究科, 准教授
2009 – 2012: 大阪大学, 大学院・工学研究科, 准教授
2009 – 2010: Osaka University, 工学研究科, 准教授
2008 – 2010: 大阪大学, 工学部, 准教授
2006 – 2007: Osaka University, Faculty of Engineering, Associate Professor, 大学院・工学研究科, 准教授
2006: Osaka University, Graduate School of Engineering, Division of Advanced Science and Biotechnology, Associate Professor, 大学院工学研究科, 助教授
2004 – 2005: 大阪大学, 大学院・工学研究科, 助手
1998 – 2001: Osaka Univ., Graduate School of Eng., Research Associate, 大学院・工学研究科, 助手
2000: 大阪大学, 大学院・工学研究科, 講師
1995 – 1997: 大阪大学, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 15:Particle-, nuclear-, astro-physics, and related fields / Medium-sized Section 14:Plasma science and related fields / Science and Engineering / Quantum beam science / Applied materials science/Crystal engineering / 表面界面物性
Except Principal Investigator
表面界面物性 / Applied materials science/Crystal engineering … More / 設計工学・機械要素・トライボロジー / Electronic materials/Electric materials / Applied materials science/Crystal engineering / Thin film/Surface and interfacial physical properties / Thin film/Surface and interfacial physical properties / Production engineering/Processing studies / Aerospace engineering / Electron device/Electronic equipment / Science and Engineering Less
Keywords
Principal Investigator
X線 / ゲルマニウム / イメージング / 半導体 / 作成・評価技術 / 位相イメージング / シリコンフォトニクス / 量子ビーム / 光源技術 / X線 … More / エピタキシャル成長 / 電気・電子材料 / 結晶成長 / 電子デバイス / X線回折 / CTR散乱 / 薄膜 / SiO_2 / ゾーンメルト / スズ / レーザー / ゲルマニウムスズ / Γ線 / フーリエイメージング / 放射線 / ガンマ線 / コースティックネットワーク開口 / フレネルゾーン開口 / 非破壊検査 / 元素識別 / 微細加工プロジェクト / 微細加工プロセス / 干渉計 / 放射線検出器 / 結晶工学 / 電子・電気材料 / 画像回復計算 / 超解像 / 格子歪み / バックゲートトランジスタ / 選択成長 / シリコンゲルマニウム / 急速昇温加熱 / 液相エピタキシャル成長 / Ge on insulator / シリコン / 界面 / 酸化 / Si界面 … More
Except Principal Investigator
シリコン / silicon / SOI / X線回折 / 低地球軌道 / 二硫化モリブデン / 宇宙環境 / トライボロジー / 原子状酸素 / MBE / SiO_2 / 酸化 / C_<60> / oxidation / 表面反応 / low earth orbit / atomic oxygen / CTR scattering / X-ray diffraction / 極微細構造 / マイクロデバイス / CTR散乱 / RTO / NF_3 / 酸化膜 / 熱酸化 / パワーエレクトロニクス / 電子・電気材料 / ゲルマニウム / パワーデバイス / 表面・界面物性 / 光電子融合デバイス / Ⅳ族混晶半導体 / 界面反応 / 界面物性 / Thermal Oxidation / Buried Oxide / Silicon / LSI基板 / 結晶工学 / SIMOX / SOIウエーハ / SiGe / SOI(Silicon On Insulator) / nano-imprint / solid phase crystallization / Ge nano-crystal / crystal nucleus / large-grain / glass substrate / Si thin film / polycrystalline Si / 固相結晶化 / 自己組織化 / 核形成 / 結晶核 / Ge微結晶 / ガラス基板 / 大粒径 / 多結晶Si薄膜 / x-ray diffraction / interface / thin film / 界面 / 薄膜 / Space environmenrt / Atomic oxygen / Molybdenum disulfide / Smallsatellite / Tribology / 摩擦 / ダイヤモンドライクカーボン / 地上試験 / 固体潤滑剤 / マイクロサテライト / Mass spectroscopy / Extreme vacuum / Three dimensional surface structure / Angular resolution / Reflection high energy electron diffraction / 電子衝撃脱離 / 吸着 / 表面工学 / 角度分解 / RHEED / 質量分析 / 超高真空 / 固体表面の三次元構造 / 角度分解化 / 反射高速電子線回析 / oxygen / XPS / beam oxidation / space environment / low temperature / 低温酸化 / ビーム酸化 / デバイスプロセス技術 / Microstructure / Microdevice / MoS_2 / UV / synergy / tribology / space environmental effect / 紫外線 / シナジ- / microstructure / microdevice / X線回析 / oxide layr / thermal oxidation / 界面準位 / 真性応力 / 酸酸化 / MOSトランジスタ / MOSFET / ショットキー接合 / ゲート絶縁膜 / SiC / 微小共振器 / 光源技術 / 光物性 / 半導体物性 / MBE、エピタキシャル / 発光 / シリコンフォトニクス / 逆格子マッピング / 放射光 / 酸化濃縮 / 歪シリコン / トポグラフィ / 歪シリコンウエーハ / 結晶評価 / MOS構造 / 電子デバイス / 材料加工・処理 / 計算物理 / 表面・界面 / 超薄膜 / 先端機能デバイス Less
  • Research Projects

    (28 results)
  • Research Products

    (173 results)
  • Co-Researchers

    (20 People)
  •  Demonstration of X (Gamma) ray Fourier imaging without refraction, diffraction and interferencePrincipal Investigator

    • Principal Investigator
      Shimura Takayoshi
    • Project Period (FY)
      2022 – 2023
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 15:Particle-, nuclear-, astro-physics, and related fields
    • Research Institution
      Osaka University
  •  Fabrication of GeSn wires by local liquid phase crystallization and demonstration of laser diode operationPrincipal Investigator

    • Principal Investigator
      志村 考功
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Waseda University
      Osaka University
  •  Demonstration of high sensitivity and high resolution X-ray imaging with structured X-ray light sourcePrincipal Investigator

    • Principal Investigator
      Shimura Takayoshi
    • Project Period (FY)
      2018 – 2019
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 14:Plasma science and related fields
    • Research Institution
      Osaka University
  •  SOIピクセル検出器による自己像直接検出型タルボ・ロー干渉計の高度化Principal Investigator

    • Principal Investigator
      志村 考功
    • Project Period (FY)
      2016 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Osaka University
  •  Development of Super-resolution Technique in Transmission X-ray Imaging using Embedded X-ray TargetsPrincipal Investigator

    • Principal Investigator
      Shimura Takayoshi
    • Project Period (FY)
      2015 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Quantum beam science
    • Research Institution
      Osaka University
  •  Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applicationsPrincipal Investigator

    • Principal Investigator
      Shimura Takayoshi
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Osaka University
  •  Improvement of SiO2/SiC interface properties with beam induced interface reactions and subsequent defect passivation

    • Principal Investigator
      WATANABE HEIJI
    • Project Period (FY)
      2015 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Osaka University
  •  Improvement of SiO2/SiC interface quality by beam induced interface reactions

    • Principal Investigator
      WATANABE HEIJI
    • Project Period (FY)
      2013 – 2014
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Osaka University
  •  Development of new functional semiconductors by utilizing novel liquid-phase crystallization technique and understanding of their optoelectronic properties

    • Principal Investigator
      WATANABE HEIJI
    • Project Period (FY)
      2013 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Osaka University
  •  Fabrication of vertical strained-Ge MOSFETs by channel-last process and the electrical characterizationPrincipal Investigator

    • Principal Investigator
      SHIMURA Takayoshi
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Osaka University
  •  Development of SiC-based plasmonic transistors with Schottky source/drain

    • Principal Investigator
      HOSOI Takuji
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Osaka University
  •  Fabrication and electrical characterization of GOI structures by rapid melt growthPrincipal Investigator

    • Principal Investigator
      SHIMURA Takayoshi
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Osaka University
  •  Development of light emitting devices in 1. 5μm range using germanium epitaxial layers on silicon

    • Principal Investigator
      ISHIKAWA Yasuhiko
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      The University of Tokyo
  •  Measurements of the strain in strained Si wafers by X-ray diffraction methods

    • Principal Investigator
      UMENO Masataka
    • Project Period (FY)
      2008 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Fukui University of Technology
  •  原子制御プロセスによる超薄MOS構造の作製とその伝導特性および界面物性の解析

    • Principal Investigator
      WATANABE Heiji
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Osaka University
  •  高性能SiCパワーエレクトロニクス実現に向けた理想MOS構造作製プロセスの創成

    • Principal Investigator
      渡部 平司
    • Project Period (FY)
      2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Osaka University
  •  Formation of Buried Oxide Layer in Epitaxial Silicon Wafers

    • Principal Investigator
      UMENO Masataka
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Fukui University of Technology
  •  Fabrication of Large-Grained Polycrystalline Si Thin Films by Controlling Nucleation Sites on Glass Substrates

    • Principal Investigator
      YASUTAKE Kiyoshi
    • Project Period (FY)
      2004 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Production engineering/Processing studies
    • Research Institution
      Osaka University
  •  X-ray Diffraction Study of the Formation Process of SiO_2/Si Interfaces

    • Principal Investigator
      UMENO Masataka
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Osaka University
  •  シリコン熱酸化膜の長距離秩序構造の解析による酸化機構の研究Principal Investigator

    • Principal Investigator
      志村 考功
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Osaka University
  •  マイクロサテライトにおけるトライボロジー技術と宇宙環境からの影響評価に関する研究

    • Principal Investigator
      TAGAWA Masahito
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      Aerospace engineering
    • Research Institution
      KOBE UNIVERSITY
      Osaka University
  •  Development of the quantitative characterization method for microstructures on semiconductor surfaces by using X-ray diffraction

    • Principal Investigator
      UMENO Masataka
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      Osaka University
  •  Development of room-temperature oxidation method of Si due to pulsed hyperthermal atomic oxygen beam

    • Principal Investigator
      UMENO Masataka
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Osaka University
  •  Development of the Angular Resolved Reflection High Energy Electron Diffraction and the Electron Impact Mass Spectroscopy for the Studies of Three Dimensional Structure of Surfaces

    • Principal Investigator
      OHMAE Nobuo
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      設計工学・機械要素・トライボロジー
    • Research Institution
      Kobe University
      Osaka University
  •  Synergistic effect on spacetribology in the low earch orbit

    • Principal Investigator
      OHMAE Nobuo
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      設計工学・機械要素・トライボロジー
    • Research Institution
      Osaka University
  •  X線CTR散乱法によるシリコン熱酸化膜中の結晶相の面方位依存性Principal Investigator

    • Principal Investigator
      志村 孝功
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      表面界面物性
    • Research Institution
      Osaka University
  •  Control of electric charge at the interface in the RTO and low temperature oxidation of SOI

    • Principal Investigator
      UMENO Masataka
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      Osaka University
  •  Development of quantitative characterization method of microstructures by X-ray scattering

    • Principal Investigator
      UMENO Masataka
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      表面界面物性
    • Research Institution
      Osaka University

All 2024 2023 2022 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2006 2005 Other

All Journal Article Presentation Patent

  • [Journal Article] Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films2023

    • Author(s)
      Shimura Takayoshi、Tanaka Shogo、Hosoi Takuji、Watanabe Heiji
    • Journal Title

      Journal of Electronic Materials

      Volume: - Issue: 8 Pages: 5053-5058

    • DOI

      10.1007/s11664-023-10309-w

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H02620, KAKENHI-PROJECT-23K22798
  • [Journal Article] Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates2023

    • Author(s)
      T. Shimura, R. Yamaguchi, N. Tabuchi, M. Kondoh, M. Kuniyoshi, T. Hosoi, T. Kobayashi and H. Watanabe
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 62 Issue: SC Pages: SC1083-SC1083

    • DOI

      10.35848/1347-4065/acb9a2

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-21K04880, KAKENHI-PROJECT-20H02620, KAKENHI-PROJECT-23K22798
  • [Journal Article] Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization2018

    • Author(s)
      H. Oka, T. Tomita, T. Hosoi, T. Shimura, and H. Watanabe
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 1 Pages: 011304-011304

    • DOI

      10.7567/apex.11.011304

    • NAID

      210000136058

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-15H03975, KAKENHI-PROJECT-16J00819
  • [Journal Article] Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization2017

    • Author(s)
      H. Oka, T. Amamoto, M. Koyama, Y. Imai, S. Kimura, T. Hosoi, T. Shimura, and H. Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 110 Issue: 3 Pages: 032104-032104

    • DOI

      10.1063/1.4974473

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-15H03975, KAKENHI-PROJECT-16J00819
  • [Journal Article] Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing2016

    • Author(s)
      A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
    • Journal Title

      Materials Science Forum

      Volume: 858 Pages: 445-448

    • DOI

      10.4028/www.scientific.net/msf.858.445

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-14F04359, KAKENHI-PROJECT-15K13951
  • [Journal Article] Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers2015

    • Author(s)
      S. Ogawa, R. Asahara, Y. Minoura, H. Sako, N. Kawasaki, I. Yamada, T. Miyamoto, T. Hosoi, T. Shimura and H. Watanabe
    • Journal Title

      Journal of Applied Physics

      Volume: 118 Issue: 23 Pages: 23704-23704

    • DOI

      10.1063/1.4937573

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Journal Article] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy2015

    • Author(s)
      T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
    • Journal Title

      ECS Transactions

      Volume: 69 Issue: 5 Pages: 305-311

    • DOI

      10.1149/06905.0305ecst

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Journal Article] Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures2015

    • Author(s)
      Y. Fukushima, A. Chanthaphan, T. Hosoi, T. Shimura, and H. Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 106 Issue: 26 Pages: 261604-261604

    • DOI

      10.1063/1.4923470

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15K13951, KAKENHI-PROJECT-14F04359
  • [Journal Article] Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack2015

    • Author(s)
      T. Hosoi, Y. Minoura, R. Asahara, H. Oka, T. Shimura, and H. Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 107 Issue: 25 Pages: 252104-252104

    • DOI

      10.1063/1.4938397

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Journal Article] Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy2015

    • Author(s)
      T. Shimura, M. Matsue, K. Tominaga, K. Kajimura, T. Amamoto, T. Hosoi, and H. Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 107 Issue: 22 Pages: 221109-221109

    • DOI

      10.1063/1.4936992

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-15H03975
  • [Journal Article] Comprehensive Study and Design of Scaled Metal/High-k/Ge Gate Stacks with Ultrathin Aluminum Oxide Interlayers2015

    • Author(s)
      Ryohei Asahara, Iori Hideshima, Hiroshi Oka, Yuya Minoura, Shingo Ogawa, Akitaka, Yoshigoe, Yuden Teraoka, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 106 Issue: 23 Pages: 233503-233503

    • DOI

      10.1063/1.4922447

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-26420289, KAKENHI-PROJECT-25246028
  • [Journal Article] Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy2014

    • Author(s)
      M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
    • Journal Title

      Appl. Phys. Lett

      Volume: 104 Issue: 3 Pages: 31106-31106

    • DOI

      10.1063/1.4862890

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22681012, KAKENHI-PROJECT-24360120, KAKENHI-PROJECT-25246021, KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-25600014
  • [Journal Article] Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing2014

    • Author(s)
      A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
    • Journal Title

      Mater. Sci. Forum

      Volume: 778-780 Pages: 541-541

    • DOI

      10.4028/www.scientific.net/msf.778-780.541

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14F04359, KAKENHI-PROJECT-24686008
  • [Journal Article] Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties2014

    • Author(s)
      T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe
    • Journal Title

      Microelectronic Engineering

      Volume: 109 Pages: 137-141

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Journal Article] Understanding and engineering of NiGe/Ge junction formed by phosphorous ion implantation after germanidation2014

    • Author(s)
      H. Oka, Y. Minoura, T. Hosoi, T. Shimura, and H. Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 105 Issue: 6 Pages: 062107-062107

    • DOI

      10.1063/1.4893152

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Journal Article] Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy2014

    • Author(s)
      T. Hosoi, Y. Suzuki, T. Shimura, and H. Watanabe
    • Journal Title

      Appl. Phys. Lett.

      Volume: 105 Issue: 17 Pages: 173502-173502

    • DOI

      10.1063/1.4900442

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360120, KAKENHI-PROJECT-25246028
  • [Journal Article] Retarded oxide growth on 4H-SiC(0001) substrates due to sacrificial oxidation2014

    • Author(s)
      細井 卓治、上西 悠介、中野 佑紀、中村 孝、志村 考功、渡部 平司
    • Journal Title

      Materials Science Forum

      Volume: 778-780 Pages: 562-565

    • DOI

      10.4028/www.scientific.net/msf.778-780.562

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24686008
  • [Journal Article] Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics2014

    • Author(s)
      A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 104 Issue: 12 Pages: 122105-122105

    • DOI

      10.1063/1.4870047

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14F04359, KAKENHI-PROJECT-24686008
  • [Journal Article] Insights into ultraviolet-induced electrical degradation of thermally grown SiO2/4H-SiC(0001) interface2014

    • Author(s)
      D. Ikeguchi, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 104 Issue: 1 Pages: 12107-12107

    • DOI

      10.1063/1.4860987

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25630124
  • [Journal Article] Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics2013

    • Author(s)
      Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, and H. Watanabe
    • Journal Title

      Applied Physics Letters

      Volume: 103 Issue: 3 Pages: 33502-33502

    • DOI

      10.1063/1.4813829

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Journal Article] Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing2013

    • Author(s)
      渡部平司
    • Journal Title

      Materials Science Forum

      Volume: 740-742 Pages: 741-744

    • DOI

      10.4028/www.scientific.net/msf.740-742.741

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24686008, KAKENHI-PROJECT-25630124
  • [Journal Article] Thermal Stability and Electron Irradiation Damage of Ordered Structure in the Thermal Oxide Layer on Si2010

    • Author(s)
      T.Shimura, D.Shimokawa, T.Inoue, T.Hosoi, H.Watanabe, O.Sakata, M.Umeno
    • Journal Title

      J.Electrochem.Soc. 157

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Interface Reaction and Rate Enhancement of SiGe Thermal Oxidation SiGe Thermal Oxidation2010

    • Author(s)
      T.shimura
    • Journal Title

      ECS Trans.

      Volume: 33 Pages: 893-899

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Thermal Stability and Electron Irradiation Damage of Ordered Structure in the Thermal Oxide Layer on Si2010

    • Author(s)
      T.shimura
    • Journal Title

      J.Electrochem.Soc.

      Volume: 157

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Residual Order in the Thermal Oxide of a Fully-strained SiGe Alloy on Si2010

    • Author(s)
      T.Shimura, Y.Okamoto, T.Inoue, T.Hosoi, H.Watanabe
    • Journal Title

      Phys.Rev.B 81

    • NAID

      120007183047

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth2010

    • Author(s)
      T. Shimura, S. Ogiwara, C. Yoshimoto, T. Hosoi, and H. Watanabe
    • Journal Title

      Appl. Phys. Express

      Volume: 3 Pages: 066502-066502

    • DOI

      10.1143/apex.2.066502

    • NAID

      10027441491

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Journal Article] Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method2010

    • Author(s)
      Heiji Watanabe, Takayoshi Shimura
    • Journal Title

      The Proceedings of International workshop on Active-matrix flatpanel displays and devices

      Pages: 53-56

    • Data Source
      KAKENHI-PROJECT-21360149
  • [Journal Article] Residual Order in the Thermal Oxide of a Fully-strained SiGe Alloy on Si2010

    • Author(s)
      T.shimura
    • Journal Title

      Phys.Rev.B

      Volume: 81

    • NAID

      120007183047

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth2010

    • Author(s)
      Takayoshi Shimura
    • Journal Title

      Appl.Phys.Express

      Volume: 3

    • NAID

      10027441491

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Journal Article] Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth2009

    • Author(s)
      T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, and H. Watanabe
    • Journal Title

      Appl. Phys. Express

      Volume: 2 Issue: 10 Pages: 105501-105501

    • DOI

      10.1143/apex.3.105501

    • NAID

      10025086916

    • Data Source
      KAKENHI-PROJECT-21360149
  • [Journal Article] Synchrotron X-ray Diffraction Studies of Thermal Oxidation of Si and SiGe2009

    • Author(s)
      T.Shimura, Y.Okamoto, S.Daisuke, T.Inoue, T.Hosoi, H.Watanabe
    • Journal Title

      ECS Transactions 19

      Pages: 479-493

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Investigation of Structural Defects in strained Si Wafers by Synchrotron X-ray Topography2008

    • Author(s)
      T. Shimura, M. Umeno, 他
    • Journal Title

      Proc. of The 5^<th> International Symposium on Advanced Science and Technology of silicon Materials

      Pages: 266-270

    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Characterization of Strained Si Wafers by Synchrotron X-ray Microbeam and Topography2008

    • Author(s)
      T. Shimura, M. Umeno, 他
    • Journal Title

      J. of Mat. Sci. : Materials in Electronics 19, Sup-plement 1

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography2008

    • Author(s)
      T.Shimura, T.Inoue, Y.Okamoto, T.Hosoi, H.Edo, S.Iida, A.Ogura, H.Watanabe
    • Journal Title

      ECS Transactions 16

      Pages: 539-543

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Characterization of Strained Si Wafers by X-ray Diffraction Techniques2008

    • Author(s)
      T.Shimura, K.Kawamura, M.Asakawa, H.Watanabe, K.Yasutake, A.Ogura, K.Fukuda, O.Sakata, S.Kimura, T.Edo, S.Iida, M.Umeno
    • Journal Title

      J.Mat.Sci.Materials in Electronics 19 Suppl.1

      Pages: 189-193

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Journal Article] Fabrication of Polycrystalline Silicon Thin Films on Glass Substrates Using Ge Nano-Islands as Nuclei2006

    • Author(s)
      K.Minami, C.Yoshimoto, H.Ohmi, T.Shimura, H.Kakiuchi, H.Watanabe, K.Yasutake
    • Journal Title

      Ext.Abst. of Int.21st Century COE Symp. on Atomistic Fabrication Technology 19-29

      Pages: 65-66

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360070
  • [Journal Article] White X-ray Topography of Lattice Undulation in Bonded Silicon-On-Insulator Wafers2006

    • Author(s)
      K.Fukuda, T.Yoshida, T.Shimura, K.Yasutake, M.Umeno, S.Iida
    • Journal Title

      Jpn.J.Appl.Phys. 45(9A)

      Pages: 6795-6799

    • NAID

      10018245181

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers2006

    • Author(s)
      T.Shimura, M.Shimizu, S.Horiuchi, H.Watanabe, Y.Yasutake, M.Umeno
    • Journal Title

      Appl. Phys. Letters 89

    • NAID

      120007183055

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers2006

    • Author(s)
      T.Shimura
    • Journal Title

      Appl. Phys. Letters 89

    • NAID

      120007183055

    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers2006

    • Author(s)
      T.Shimura, M.Shimizu, S.Horiuchi, H.Watanabe, Y.Yasutake, M.Umeno
    • Journal Title

      Appl.Phys.Letters 89

    • NAID

      120007183055

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] White X-ray Topography of Lattice Undulation in Bonded Silicon-On-Insulator Wafers2006

    • Author(s)
      K.Fukuda, T.Yoshida, T.Shimura, K.Yasutake, M.Umeno, S.Iida
    • Journal Title

      Jpn. J. Appl. Phys. 45-9

      Pages: 6795-6799

    • NAID

      10018245181

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal-thermal-oxidation separation-by-implanted-oxygen wafers2005

    • Author(s)
      Takayoshi Shimura, F.Kazunori, K.Yasutake, T.Hosoi, M.Umeno
    • Journal Title

      Thin Solid Films vol.476-1

      Pages: 125-129

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Ordered Structure in the Thermal Oxide Layer on Silicon Substrates2005

    • Author(s)
      T.Shimura, E.Mishima, H.Watanabe, K.Yasutake, M.Umeno, K.Tatsumura, T.Watanabe, I.Ohdomari, K.Yamada, S.Kamiyama, Y.Akasaka, Y.Nara, K.Nakamura
    • Journal Title

      ECS Transactions 1-1

      Pages: 39-48

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process2005

    • Author(s)
      T.Shimura, K.Yasutake, M.Umeno, M.Nagase
    • Journal Title

      Appl.Phys.Letters 86

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal- thermal-oxidation separation-by-implanted-oxygen wafers2005

    • Author(s)
      Takayoshi Shimura, F.Kazunori, K.Yasutake, T.Hosoi, M.Umeno
    • Journal Title

      Thin Solid Films 476-1

      Pages: 125-129

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Reactions and diffusion of atomic and molecular oxygen in the SiO_2 network2005

    • Author(s)
      T.Tatsumura, T.Shimura, E.Mishima, K.Kawamura, D.Yamasaki, H.Yamamoto, T.Watanabe, M.Umeno, I.Ohdomari
    • Journal Title

      Phys. Rev. B 72-4

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Ordered Structure in the Thermal Oxide Layer on Silicon Substrates2005

    • Author(s)
      T.Shimura, E.Mishima, H.Watanabe, K.Yasutake, M.Umeno, K.Tatsumura, T.Watanabe, I.Ohdomari, K.Yamada, S.Kamiyama, Y.Akasaka, Y.Nara, K.Nakamura
    • Journal Title

      ECS Transactions Vol.1 No1

      Pages: 39-48

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Ordered Structure in the Thermal Oxide Layer on Silicon Substrates2005

    • Author(s)
      T.Shimura, E.Mishima, H.Watanabe, K.Yasutake, M.Umeno, K.Tatsumura, T.Watanabe, I.Ohdomari, K.Yamada, S.Kamiyama, Y.Akasaka, Y.Nara, K.Nakamura
    • Journal Title

      ECS Transactions 1(1)

      Pages: 39-48

    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process2005

    • Author(s)
      T.Shimura, K.Yasutake, M.Umeno, M.Nagase
    • Journal Title

      Appl. Phys. Letters 86

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal-thermal-oxidation separation-by-implanted-oxygen wafers2005

    • Author(s)
      T.Shimura, K.Fukuda, K.Yasutake, T.Hosoi, M.Umeno
    • Journal Title

      Thin Solid Films 476-1

      Pages: 125-129

    • Data Source
      KAKENHI-PROJECT-17560014
  • [Journal Article] Reactions and diffusion of atomic and molecular oxygen in the SiO_2 network2005

    • Author(s)
      T.Tatsumura, T.Shimura, E.Mishima, K.Kawamura, D.Yamasaki, H.Yamamoto, T.Watanabe, M.Umeno, I.Ohdomari
    • Journal Title

      Phys.Rev.B 72(4)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560014
  • [Patent] 単結晶状GeSn含有材料の製造方法および単結晶状GeSn含有材料基板2012

    • Inventor(s)
      志村考功、渡部平司、細井卓治
    • Industrial Property Rights Holder
      大阪大学
    • Industrial Property Number
      2012-042746
    • Filing Date
      2012-02-29
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] Si基板上GeSn細線のレーザー溶融結晶化における レーザー走査条件と下地SiO2膜厚の最適化2024

    • Author(s)
      早川 雄大、近藤 優聖、國吉 望月、小林 拓真、志村 考功、渡部 平司
    • Organizer
      第29回電子デバイス界面テクノロジー研究会
    • Data Source
      KAKENHI-PROJECT-23K22798
  • [Presentation] Si基板上GeSn細線のレーザー溶融結晶化における下地SiO2膜厚とレーザー走査速度の最適化2024

    • Author(s)
      早川 雄大、近藤 優聖、國吉 望月、小林 拓真、志村 考功、渡部 平司
    • Organizer
      第71回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K22798
  • [Presentation] 高エネルギーX線CT計測 -高角散乱X線を用いたライトシート3Dイメージングとの比較検証-2023

    • Author(s)
      志村 考功,梶原 堅太郎,辻 成希,小林 拓真,渡部 平司
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18714
  • [Presentation] Si基板上GeSn細線の レーザー溶融結晶化と光学特性評価2023

    • Author(s)
      近藤 優聖, 田淵 直人, 國吉 望月, 小林 拓真, 志村 考功, 渡部 平司
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K22798
  • [Presentation] Ge(100)基板上にスパッタ成膜した エピタキシャルGeSn層の評価2022

    • Author(s)
      田中 信敬, 安部 和弥, 星原 雅生, 國吉 望月, 小林 拓真, 志村 考功, 渡部 平司
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K22798
  • [Presentation] スパッタ成膜法によるGe(100)基板上のGeSnエピタキシャル成長2022

    • Author(s)
      國吉 望月, 安部 和弥, 田中 信敬, 星原 雅生, 小林 拓真, 志村 考功, 渡部 平司
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K22798
  • [Presentation] Controllability of Luminescence Wavelength from GeSn Wires Fabricated by Laser Zone Melting on Quartz Substrates2022

    • Author(s)
      T. Shimura, R. Yamaguchi, N. Tabuchi, M. Kondo, M. Kuniyoshi, T. Hosoi, T. Kobayashi, and H. Watanabe
    • Organizer
      2022 International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K22798
  • [Presentation] 高角散乱X線を用いたライトシート3Dイメージング2022

    • Author(s)
      志村 考功,梶原 堅太郎,辻 成希,小林 拓真,渡部 平司
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18714
  • [Presentation] マルチラインLa埋め込みX線源を用いたX線位相イメージング2019

    • Author(s)
      福田 椋南子,塚本 大裕,細井 卓治,渡部 平司,志村 考功
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18K18752
  • [Presentation] X-ray phase-contrast imaging using Talbot-Lau interferometer with lanthanum targets embedded in diamond substrates2019

    • Author(s)
      Rinako Fukuda, Amane Yamazaki, Daisuke Tsukamoto, Takuji Hosoi, Heiji Watanabe, and Takayoshi Shimura
    • Organizer
      X-ray and Neutron Phase Imaging with Gratings (XNPIG2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K18752
  • [Presentation] Multi-energy x-ray phase contrast imaging using subpixel analysis and multilayer x-ray target in optical system of microfocus x-ray source and SOI pixel detector, SOPHIAS2019

    • Author(s)
      R. Hosono, K. Hayashida, T. Kudo, K. Ozaki, N. Teranishi, T. Hatsui, T. Hosoi, H. Watanabe, and T. Shimura
    • Organizer
      X-ray and Neutron Phase Imaging with Gratings (XNPIG2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K18752
  • [Presentation] レーザー溶融結晶化による石英基板上引張歪み単結晶GeSnアレイの作製2018

    • Author(s)
      岡 博史, 黒木 伸一郎, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] Grating-based X-ray Phase Contrast Imaging with a Microfocus X-ray Source by a SOI Pixel Detector, SOPHIAS2018

    • Author(s)
      R. Hosono, T. Kawabata, K. Hayashida, T. Kudo, K. Ozaki, T. Hatsui, N. Teranishi, T. Hosoi, H. Watanabe, and T. Shimura
    • Organizer
      The 1st Workshop on Quantum Beam Imaging
    • Data Source
      KAKENHI-PROJECT-18K18752
  • [Presentation] レーザー溶融結晶化による石英基板上引張歪み単結晶GeSnアレイの作製2018

    • Author(s)
      岡 博史, 黒木 伸一郎, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 裏面照射型近赤外イメージセンサーに向けた基板上単結晶GeSnフォトダイオードアレイの開発2018

    • Author(s)
      岡 博史, 井上慶太郎, Thi Thuy Nguyen, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司
    • Organizer
      映像情報メディア学会情報センシング研究会
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 横方向液相エピタキシャル成長により作製した引張歪み高濃度n型Ge細線の低温発光特性と共振器の形成2018

    • Author(s)
      冨田 崇史, 岡 博史, 井上 慶太郎, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-(第23回研究会)
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] 裏面照射型石英基板上GeSnフォトダイオードの近赤外受光特性評価2018

    • Author(s)
      岡 博史, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] High-mobility TFT and enhanced luminescence utilizing ucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic2018

    • Author(s)
      H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      関西コロキアム電子デバイスワークショップ
    • Invited
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 石英基板上単結晶GeSn層形成と光電子デバイス応用2018

    • Author(s)
      細井 卓治, 岡 博史, 井上 慶太郎, 志村 考功, 渡部 平司
    • Organizer
      電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 横方向液相エピタキシャル成長により作製した引張歪み高濃度n型Ge細線の低温発光特性と共振器の形成2018

    • Author(s)
      冨田 崇史, 岡 博史, 井上 慶太郎, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 裏面照射型石英基板上GeSnフォトダイオードの近赤外受光特性評価2018

    • Author(s)
      岡 博史, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 石英基板上単結晶GeSn層形成と光電子デバイス応用2018

    • Author(s)
      細井 卓治, 岡 博史, 井上 慶太郎, 志村 考功, 渡部 平司
    • Organizer
      電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-(第23回研究会)
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] Improvements of Grating-based X-ray Phase Contrast Imaging with a Microfocus X-ray Source by a SOI Pixel Detector, SOPHIAS2017

    • Author(s)
      R. Hosono, D. Tsukamoto, T. Kawabata, K. Hayashida, T. Kudo, K. Ozaki, T. Hatsui, N. Teranishi, T. Hosoi, H. Watanabe, T. Shimura
    • Organizer
      11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-16H00948
  • [Presentation] 横方向液相エピタキシャル成長による高濃度Sbドープ単結晶Ge細線の作製と光学特性評価2017

    • Author(s)
      冨田 崇史, 岡 博史, 小山 真広, 田中 章吾, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」
    • Place of Presentation
      東レ研修センター, 静岡県三島市
    • Year and Date
      2017-01-19
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 横方向液相成長により作製したSb ドープ単結晶GeSn n チャネルTFT2017

    • Author(s)
      岡 博史, 冨田 崇史, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第64回応用物理学関係連合講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川県横浜市
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 横方向液相成長によって作製した引張歪み高濃度n 型Ge 細線の光学特性評価2017

    • Author(s)
      冨田 崇史,岡 博史,小山 真広,田中 章吾,細井 卓治,志村 考功,渡部 平司
    • Organizer
      2017年春季 第64回応用物理学関係連合講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] X-ray Phase Contrast Imaging using a Microfocus X-ray source in Conjunction with Amplitude Grating and SOI Pixel Detector2017

    • Author(s)
      R. Hosono, I. Sano, T. Kawabata, K. Hayashida, T. Kudo, K. Ozaki, T. Hatsui, T. Hosoi, H. Watanabe, and T. Shimura
    • Organizer
      The 4th International conference on X-ray and Neutron Phase Imaging with Gratings (XNPIG2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-16H00948
  • [Presentation] 横方向液相成長により作製したSb ドープ単結晶GeSn n チャネルTFT2017

    • Author(s)
      岡 博史, 冨田 崇史, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      2017年春季 第64回応用物理学関係連合講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] 透明基板上単結晶GeSn n+/p接合フォトダイオードの作製と評価2017

    • Author(s)
      岡 博史、井上 慶太、冨田 崇史、和田 裕希、細井 卓治、志村 考功、渡部 平司
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] マイクロフォーカスX線源と振幅格子を用いた多波長X線位相イメージング-SOI ピクセル検出器による高度化2017

    • Author(s)
      細野 凌、塚本大裕、川端智樹、林田 清、工藤統吾、尾崎恭介、初井宇記、寺西信一、細井卓治、渡部平司、志村考功
    • Organizer
      精密工学会2017年度秋季大会
    • Data Source
      KAKENHI-PUBLICLY-16H00948
  • [Presentation] シードレス液相成長による単結晶GeSn超薄膜形成と電気特性評価2017

    • Author(s)
      小山 真広, 岡 博史, 田中 章吾, 冨田 崇史, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」
    • Place of Presentation
      東レ研修センター, 静岡県三島市
    • Year and Date
      2017-01-19
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 透明基板上単結晶GeSn n+/p接合フォトダイオードの作製と評価2017

    • Author(s)
      岡 博史、井上 慶太、冨田 崇史、和田 裕希、細井 卓治、志村 考功、渡部 平司
    • Organizer
      2017年 第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] 多層膜X線ターゲットとピクセル検出器を用いた元素識別X線イメージング2017

    • Author(s)
      細野 凌、塚本 大裕、川端 智樹、林田 清、工藤 統吾、尾崎 恭介、初井 宇記、寺西 信一、細井 卓治、渡部 平司、志村 考功
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-16H00948
  • [Presentation] Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip2017

    • Author(s)
      H. Oka, K. Inoue, T. T. Nguyen, S. Kuroki, T. Hosoi, T. Shimura, H. Watanabe
    • Organizer
      63rd IEEE International Electron Devices Meeting (2017 IEDM)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] Enhancement-mode n-channel TFT and room-temperature near-infrared emission based on n+/p junction in single-crystalline GeSn on transparent substrate2017

    • Author(s)
      H. Oka, M. Koyama, T. Hosoi, T. Shimura and H. Watanabe
    • Organizer
      Symposium on VLSI Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] マイクロフォーカスX線源と振幅格子を用いたX線位相イメージング-振幅格子の投影像の短周期化の検討2017

    • Author(s)
      細野 凌, 佐野 壱成, 川端 智樹, 林田 清, 工藤 統吾, 尾崎 恭介, 初井 宇記, 細井 卓治, 渡部 平司, 志村 考功
    • Organizer
      2017年春季 第64回応用物理学関係連合講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PUBLICLY-16H00948
  • [Presentation] Back-side illuminated GeSn photodiode array on quartz substrate fabricated by laser-induced liquid-phase crystallization for monolithically-integrated NIR imager chip2017

    • Author(s)
      H. Oka, K. Inoue, T. T. Nguyen, S. Kuroki, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      IEEE International Electron Devices Meeting (2017 IEDM)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] Enhancement-Mode N-Channel TFT and Room-Temperature Near-Infrared Emission Based on n+/p Junction in Single-Crystalline GeSn on Transparent Substrate2017

    • Author(s)
      H. Oka, M. Koyama, T. Hosoi, T. Shimura and H. Watanabe
    • Organizer
      2017 Symposium on VLSI Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] 振幅格子とピクセル検出器を用いたエネルギー分解X 線位相イメージングの検討2016

    • Author(s)
      細野 凌, 佐野 壱成, 川端 智樹, 林田 清, 土岐 貴弘, 細井 卓治, 渡部 平司, 志村 考功
    • Organizer
      2016年秋季 第77回応用物理学関係連合講演会
    • Place of Presentation
      新潟市
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PUBLICLY-16H00948
  • [Presentation] High-mobility GeSn p-MOSFETs on Transparent Substrate Utilizing Nucleation-controlled Liquid-phase Crystallization2016

    • Author(s)
      H. Oka, T. Amamoto, T. Hosoi, T. Shimura, H. Watanabe
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      Honolulu, HI, USA
    • Year and Date
      2016-06-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] マイクロフォーカスX線源と振幅格子を用いたX線位相イメージングの検討2016

    • Author(s)
      細野 凌, 森本直樹, 伊藤康浩, 山崎 周, 佐野壱成, 土岐貴弘, 佐野 哲, 細井卓治, 渡部平司, 志村考功
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京都目黒区
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K13408
  • [Presentation] High-mobility TFT and Enhanced Luminescence Utilizing Nucleation-controlled GeSn Growth on Transparent substrate for Monolithic Optoelectronic Integration2016

    • Author(s)
      H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      IEEE International Electron Devices Meeting
    • Place of Presentation
      San Francisco
    • Year and Date
      2016-12-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] Photoluminescence from n-type tensile-strained Ge and GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy2016

    • Author(s)
      T. Shimura, M. Matsue, K. Tominaga, K. Kajimuira, T. Amamoto, T. Hosoi, and H. Watanabe
    • Organizer
      The 7th International Symposium on Advanced Science and Technology of Silicon Materials
    • Place of Presentation
      Kona, HI, USA
    • Year and Date
      2016-11-21
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] SbドープアモルファスGeの局所溶融横方向液相エピタキシャル成長によるn型Ge細線の作製と評価2016

    • Author(s)
      冨田 崇史, 岡 博史, 小山 真広, 田中 章吾, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第77回応用物理学関係連合講演会
    • Place of Presentation
      朱鷺メッセ, 新潟県新潟市
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] Photoluminescence from n-type tensile-strained Ge and GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy2016

    • Author(s)
      T. Shimura, M. Matsue, K. Tominaga, K. Kajimuira, T. Amamoto, T. Hosoi, and H. Watanabe
    • Organizer
      The 7th International Symposium on Advanced Science and Technology of Silicon Materials
    • Place of Presentation
      Kona, Hawaii
    • Year and Date
      2016-11-21
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] SbドープアモルファスGeの局所溶融横方向液相エピタキシャル成長によるn型Ge細線の作製と評価2016

    • Author(s)
      冨田 崇史, 岡 博史, 小山 真広, 田中 章吾, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      2016年秋季 第77回応用物理学関係連合講演会
    • Place of Presentation
      新潟市
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing2015

    • Author(s)
      A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      16th International Conference on Silicon Carbide and Related Materials
    • Place of Presentation
      Giardini Naxos, Italy
    • Year and Date
      2015-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13951
  • [Presentation] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy2015

    • Author(s)
      T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
    • Organizer
      The 228th ECS Meeting
    • Place of Presentation
      Phoenix, Arizona, USA
    • Year and Date
      2015-10-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy2015

    • Author(s)
      T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
    • Organizer
      The 228th ECS Meeting
    • Place of Presentation
      Phoenix, Arizona, USA
    • Year and Date
      2015-10-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03975
  • [Presentation] Schottky barrier height modulation at NiGe/Ge interface by phosphorous ion implantation and its application to Ge-based CMOS devices2015

    • Author(s)
      T. Hosoi, H. Oka, Y. Minoura, T. Shimura, and H. Watanabe
    • Organizer
      The 15th International Workshop on Junction Technology
    • Place of Presentation
      Kyoto University Kihada Hall (Uji Campus), Kyoto
    • Year and Date
      2015-06-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology2015

    • Author(s)
      H. Oka, Y. Minoura, R. Asahara, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      第15回関西コロキアム電子デバイスワークショップ
    • Place of Presentation
      大阪府大阪市
    • Year and Date
      2015-12-15
    • Invited
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 横方向液相成長法による石英基板上単結晶GeSn細線の作製と光学特性評価2015

    • Author(s)
      天本 隆史, 冨永 幸平, 田中 章吾, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第76回応用物理学関係連合講演会
    • Place of Presentation
      愛知県名古屋市
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 横方向液相成長によって作製したGeSn-on-insulator構造のバンドギャップ変調評価2014

    • Author(s)
      4.冨永 幸平,松江 将博,細井 卓治,志村 考功,渡部 平司
    • Organizer
      2014年春季 第61回応用物理学関係連合講演会
    • Place of Presentation
      神奈川県相模原市
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 極薄EOT high-k/Geゲートスタックの熱安定性及び界面特性改善に向けたプロセス設計2014

    • Author(s)
      淺原亮平, 細井卓治, 志村考功, 渡部平司
    • Organizer
      電子情報通信学会 シリコン材料・デバイス(SDM)研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-06-19
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 横方向液相成長法により作製したn型Ge-on-insulator層の直接遷移発光の増強2014

    • Author(s)
      梶村 恵子,松江 将博,細井 卓治,志村 考功,渡部 平司
    • Organizer
      2014年春季 第61回応用物理学関係連合講演会
    • Place of Presentation
      神奈川県相模原市
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 横方向液相エピタキシャル成長法によりY2O3層上に形成した局所GOI層の電気特性評価2014

    • Author(s)
      梶村 恵子,松江 将博,細井 卓治,志村 考功,渡部 平司
    • Organizer
      2014年春季 第61回応用物理学関係連合講演会
    • Place of Presentation
      神奈川県相模原市
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 横方向液相成長法で作製した局所GeSn-on-insulator層の優先結晶方位2014

    • Author(s)
      3.冨永 幸平,松江 将博,細井 卓治,志村 考功,渡部 平司
    • Organizer
      2014年春季 第61回応用物理学関係連合講演会
    • Place of Presentation
      神奈川県相模原市
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 横方向液相エピタキシャル成長によって作製したGeワイヤのフォトルミネッセンス測定によるバンドギャップ変調評価2014

    • Author(s)
      梶村 恵子, 松江 将博, 安武 裕輔, 深津 晋, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      ゲートスタック研究会 ―材料・プロセス・評価の物理―」(第19回研究会)
    • Place of Presentation
      静岡県熱海市
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling Interface Reaction Using Ultrathin AlOx Interlayer2013

    • Author(s)
      T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe
    • Organizer
      The 44th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      Arlington, USA
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay2013

    • Author(s)
      T. Hosoi, Y. Suzuki, H. Nishikawa, M. Matsue, T. Shimura, and H. Watanabe
    • Organizer
      2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] Phosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge2013

    • Author(s)
      Y. Minoura, T. Hosoi, J. Matsugaki, S. Kuroki, T. Shimura, and H. Watanabe
    • Organizer
      2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay2013

    • Author(s)
      T. Hosoi, Y. Suzuki, H. Nishikawa, M. Matsue, T. Shimura, and H. Watanabe
    • Organizer
      2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013),
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy - Material and strain engineering toward CMOS compatible group-IV photonics -2013

    • Author(s)
      M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      The 44th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      Arlington, USA
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy -Material and strain engineering toward CMOS compatible group-IV photonics-2013

    • Author(s)
      M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      The 44th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Place of Presentation
      Arlington, VA, USA
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties2013

    • Author(s)
      T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe
    • Organizer
      The 18th Conference of Insulating Films on Semiconductors
    • Place of Presentation
      Cracow, Poland
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 横方向液相成長によって作製したGOI構造のフォトルミネッセンス測定2013

    • Author(s)
      松江 将博,安武 裕輔,深津 晋,細井 卓治,志村 考功,渡部 平司
    • Organizer
      2013年秋季 第74回応用物理学関係連合講演会
    • Place of Presentation
      京都府田辺市
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 横方向液相エピタキシャル成長により作成した単結晶GOI構造の電気特性評価2012

    • Author(s)
      鈴木雄一朗, 原伸平, 井卓治, 志村考功, 渡部平司
    • Organizer
      第17回ゲートスタック研究会
    • Place of Presentation
      三島市、静岡
    • Year and Date
      2012-01-20
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] Rapid Melt Growth of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Substrates2012

    • Author(s)
      Takayoshi Shimura
    • Organizer
      International Union of Materials Research Societies - International Conference on Electronic Materials 2012
    • Place of Presentation
      Yokohama, Kanagawa
    • Year and Date
      2012-09-28
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 横方向液相エピタキシャル成長により作製した単結晶GOI構造の電気特性評価2012

    • Author(s)
      鈴木雄一朗, 荻原伸平, 細井卓治, 志村考功, 渡部平司
    • Organizer
      ゲートスタック研究会-材料・プロセス・評価の物理-」(第17回研究会)
    • Place of Presentation
      静岡県三島市
    • Year and Date
      2012-01-20
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] Fabrication of Ge-on-i nsu1ator structure by lateral liquid-phase epitaxy and its electrical characterization using back-gate transistors2012

    • Author(s)
      Takayoshi Shimura
    • Organizer
      The 6th International Symposium on Advanced Science and Technology of Silicon Materials
    • Place of Presentation
      Kailua-Kona, USA
    • Year and Date
      2012-11-20
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 急速加熱処理によるGe1-xSnx層の低温エピタキシャル成長2012

    • Author(s)
      荻原伸平, 片岡伸文, 鈴木雄一朗, 細井卓治, 志村考功, 渡部平司
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 急速加熱処理によるGe_<1-x>Sn_x層の低温エピタキシャル成長2012

    • Author(s)
      荻原伸平, 片岡伸文, 鈴木雄一朗, 細井卓治, 志村考功, 渡部平司
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京都新宿区
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] Fabrication of High-quality SiGe-on-Insulator and Ge-on-Insulator Structures by Rapid Melt Growth2012

    • Author(s)
      Takayoshi Shimura
    • Organizer
      The International Symposium on Visualization in Joining & Welding Science through Advanced Measurements and Simulation
    • Place of Presentation
      Suita, Osaka(招待講演)
    • Year and Date
      2012-11-30
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2011

    • Author(s)
      荻原伸平, 鈴木雄一朗, 吉本千秋, 細井卓治, 志村考功, 渡部平司
    • Organizer
      第16回ゲートスタック研究会
    • Place of Presentation
      東京
    • Year and Date
      2011-01-22
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] High-mobility Ge-on-insulator p-channel MOSFETs fabricated by lateral liquid-phase epitaxy2011

    • Author(s)
      Y. Suzuki, S. Ogiwara, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      42nd IEEE Semiconductor Interface Specialists Conf.
    • Place of Presentation
      Arlington, VA, USA
    • Year and Date
      2011-12-01
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] High-mobility Ge-on-insulator p-channel MOSFETs fabricated by lateral liquid-phase epitaxy2011

    • Author(s)
      Y.Suzuki, S.Ogiwara, T.Hosoi, T.Shimura, H.Watanabe
    • Organizer
      42nd IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      Arlington, USA
    • Year and Date
      2011-12-01
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 横方向液相エピタキシャル成長により作製した局所GOI構造の電気特性評価2011

    • Author(s)
      鈴木雄一朗, 荻原伸平, 細井卓治, 志村考功, 渡部平司
    • Organizer
      第72回応用物理学関係連合講演会
    • Place of Presentation
      山形県山形市
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] High-quality Single-crystal SiGe Layers on Insulator Formed by Rapid Melt Growth2011

    • Author(s)
      S. Ogiwara, Y. Suzuki, C. Yoshimoto, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      International Meeting for Future of Electron Devices, Kansai Osaka. Japan
    • Place of Presentation
      Osaka, Japan
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] High-Quality Single-Crystalline Ge-on-Insulator P-Channel MOSFETs Formed by Lateral Liquid-Phase Epitaxy2011

    • Author(s)
      T.Suzuki, S.Ogiwara, T.Hosoi, T.Shimura, H.Watanabe
    • Organizer
      Fourth International Symposium on Atomically Controlled Fabrication Technology
    • Place of Presentation
      Osaka, Japan
    • Year and Date
      2011-11-25
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2011

    • Author(s)
      荻原伸平、志村考功
    • Organizer
      応用物理学会薄膜・表面物理分科会シリコンテクノロジー分科会共催特別研究会アブストラクト集「ゲートスタック研究会-材料・プロセス・評価の物理-」(第16回研究会)
    • Place of Presentation
      東京都目黒区大岡山、東京工業大学
    • Year and Date
      2011-01-22
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 横方向液相エピタキシャル成長により作製した局所GOI構造の電気特性評価2011

    • Author(s)
      鈴木雄一朗, 荻原伸平, 細井卓治, 志村考功, 渡部平司
    • Organizer
      第72回応用物理学関係連合講演会
    • Place of Presentation
      山形市
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] High-quality Single-crystal SiGe Layers on Insulator Formed by Rapid Melt Growth2011

    • Author(s)
      S.Ogiwara, Y.Suzuki, C.Yoshimoto, T.Hosoi, T.Shimura, H.Watanabe
    • Organizer
      2011 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Osaka, Japan
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] Fabrication of High-quality GOI and SGOI Structures by Rapid Melt Growth Method2011

    • Author(s)
      H.Watanabe, C.Yoshimoto, T.Hashimoto, S.Ogiwara, Y.Suzuki, T.Hosoi, T.Shimura
    • Organizer
      Fourth International Symposium on Atomically Controlled Fabrication Technology
    • Place of Presentation
      Osaka, Japan
    • Year and Date
      2011-11-26
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method2011

    • Author(s)
      H. Watanabe, C. Yoshimoto, T. Hashimoto, S. Ogiwara, T. Hosoi, and T. Shimura
    • Organizer
      The 19th Int. Workshop on Active-Matrix Flatpanel Displays and Device
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2011-07-06
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 急速加熱液相エピタキシャル成長法により作製したSGOI構造のGe濃度のアニール温度依存性2010

    • Author(s)
      荻原伸平, 吉本千秋, 細井卓治, 志村考功, 渡部平司
    • Place of Presentation
      長崎市、長崎
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2010

    • Author(s)
      荻原伸平、志村考功
    • Organizer
      第71回応用物理学関係連合講演会
    • Place of Presentation
      長崎県長崎市長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method2010

    • Author(s)
      Heiji Watanabe, Takayoshi Shimura
    • Organizer
      The 7th International workshop on Active-matrix Flatpanel Displays and Devices
    • Place of Presentation
      東京都目黒区大岡山、東京工業大学(招待講演)
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 急速加熱液相エピタキシャル成長法により作製したSGOI構造のGe濃度のアニール温度依存性2010

    • Author(s)
      荻原伸平、志村考功
    • Organizer
      第71回応用物理学関係連合講演会
    • Place of Presentation
      長崎県長崎市長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] Fabricatrion of High-quality SiGe-on-insulator Structures by Rapid Melt Growth2010

    • Author(s)
      Shinpei Ogiwara, Takayoshi Shimura
    • Organizer
      Third International Symposium on Atomiscally Controlled Fabrication Technology
    • Place of Presentation
      大阪市大阪大学中ノ島センター
    • Year and Date
      2010-11-24
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2010

    • Author(s)
      荻原伸平, 吉本千秋, 細井卓治, 志村考功, 渡部平司
    • Place of Presentation
      長崎市、長崎
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 放射光X線トポグラフィによるSGOIウエーハの歪み及び格子面傾斜揺らぎの2次元分布測定2009

    • Author(s)
      志村考功
    • Organizer
      第70回応用物理学関係連合講演会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Presentation] Observation of Two-Dimensional Distribution of Lattice Inclination and Strain in Strained Si Wafers by Synchrotron X-Ray Topography2009

    • Author(s)
      志村考功
    • Organizer
      13th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
    • Place of Presentation
      Wheeling, USA
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Presentation] Observation of Two-dimensional Distribution of Lattice Inclination and Strain in Strained Si Wafers by Synchrotron X-ray Topography2009

    • Author(s)
      T.Shimura, M.Umeno, 他
    • Organizer
      The 13^<th> International Conference on Defects-Recognition, Imaging and Physics in Semiconductors(DRIP XIII)
    • Place of Presentation
      Wheeling, W.V., USA
    • Year and Date
      2009-09-15
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Presentation] 放射光X線トポグラフィによる歪みSiウエーハの歪み及び格子面傾斜揺らぎの2次元分布測定2009

    • Author(s)
      志村考功
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Presentation] Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy2009

    • Author(s)
      T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      MRS fall meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-11-30
    • Data Source
      KAKENHI-PROJECT-21360149
  • [Presentation] 放射光X線マイクロビームによるSiGe酸化濃縮時における歪み緩和過程の局所領域評価2008

    • Author(s)
      志村考功
    • Organizer
      第69回応用物理学関係連合講演会
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Presentation] Investigation of Structural Defects in Strained Si Wafers by Synchrotron X-ray Topography2008

    • Author(s)
      志村考功
    • Organizer
      The 5^<th> International Symposium on Advanced Science and Technology of Silicon Materials
    • Place of Presentation
      Kona, USA
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Presentation] Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography2008

    • Author(s)
      志村考功
    • Organizer
      214th ECS Meeting
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-20560017
  • [Presentation] Fabrication of GeSn-on-insulator Structure by Utilizing Lateral Liquid-Phase Epitaxy

    • Author(s)
      T. Hosoi, K. Kajimura, K. Tominaga, T. Shimura, and H. Watanabe
    • Organizer
      The 45th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Place of Presentation
      San Diego, CA, USA
    • Year and Date
      2014-12-10 – 2014-12-13
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] Fabrication of GeSn-on-insulator Structure by Utilizing Lateral Liquid-Phase Epitaxy

    • Author(s)
      T. Hosoi, K. Kajimura, K. Tominaga, T. Shimura, and H. Watanabe
    • Organizer
      IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      San Diego, CA, USA
    • Year and Date
      2014-12-10 – 2014-12-13
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] カソードルミネッセンス法による熱酸化SiO2/SiC界面欠陥の検出

    • Author(s)
      福島悠太、アラン フルカン、樋口直樹、チャンタパン アタウット、細井卓治、志村考功、渡部平司
    • Organizer
      先進パワー半導体分科会 第1回講演会
    • Place of Presentation
      愛知県産業労働センター ウインクあいち(愛知県名古屋市)
    • Year and Date
      2014-11-19 – 2014-11-20
    • Data Source
      KAKENHI-PROJECT-25630124
  • [Presentation] NOアニールを施したSiC MOSデバイスのフラットバンド電圧安定性

    • Author(s)
      勝 義仁, 細井 卓治, 南園 悠一郎, 木本 恒暢, 志村 考功, 渡部 平司
    • Organizer
      第62回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24686008
  • [Presentation] 横方向液相エピタキシャル成長によって作製した絶縁体上GeSnワイヤのフォトルミネッセンス測定によるバンドギャップ変調技術

    • Author(s)
      天本隆史, 冨永幸平, 梶村恵子, 松江将博, 細井卓治, 志村孝功, 渡部平司
    • Organizer
      応用物理学会 薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会」
    • Place of Presentation
      東レ研修センター, 静岡県三島市
    • Year and Date
      2015-01-29 – 2015-01-31
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 急速加熱処理により作製したGeSn-on-quartz構造のフォトルミネッセンス測定

    • Author(s)
      天本隆史, 冨永幸平, 梶村恵子, 細井卓治, 志村考功, 渡部平司
    • Organizer
      第62回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] Understanding of Bias-Temperature Instability due to Mobile Ions in SiC Metal-Oxide-Semiconductor Devices

    • Author(s)
      チャンタパン アタウット, 中野佑紀, 中村 孝, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      「ゲートスタック研究会 ―材料・プロセス・評価の物理―」(第20回研究会)
    • Place of Presentation
      東レ研修センター、三島市
    • Year and Date
      2015-01-29 – 2015-01-30
    • Data Source
      KAKENHI-PROJECT-24686008
  • [Presentation] カソードルミネッセンス法による熱酸化SiO2/SiC界面欠陥の検出

    • Author(s)
      福島悠太, チャンタパン アタウット, 永井大介, 細井卓治, 志村考功, 渡部平司
    • Organizer
      第62回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25630124
  • [Presentation] Synchrotron radiation photoemission spectroscopy study of SiO2/4H-SiC(0001) interfaces with NO annealing

    • Author(s)
      細井 卓治, 南園 悠一郎, 木本 恒暢, 吉越 章隆, 寺岡 有殿, 志村 考功, 渡部 平司
    • Organizer
      10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014)
    • Place of Presentation
      Grenoble, France
    • Year and Date
      2014-09-21 – 2014-09-25
    • Data Source
      KAKENHI-PROJECT-24686008
  • [Presentation] Schottky Barrier Height Reduction of NiGe/Ge Junction by P Ion Implantation for Metal Source/Drain Ge CMOS Devices

    • Author(s)
      H. Oka, Y. Minoura, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Ryukoku University Avanti Kyoto Hall, Kyoto
    • Year and Date
      2014-06-19 – 2014-06-20
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 横方向液相エピタキシャル成長法により形成したGeSn-on-insulator層の電気特性評価

    • Author(s)
      梶村恵子,細井卓治,志村考功,渡部平司
    • Organizer
      第75回応用物理学関係連合講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 4H-SiC(0001)面の熱酸化における酸化種と酸化速度の関係

    • Author(s)
      永井 大介, 福島 悠太, 勝 義仁, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      先進パワー半導体分科会 第1回講演会
    • Place of Presentation
      愛知県産業労働センター、名古屋市
    • Year and Date
      2014-11-19 – 2014-11-20
    • Data Source
      KAKENHI-PROJECT-24686008
  • [Presentation] Diffusivity of Mobile Ions Inherent to Thermal SiO2/SiC Structures in Deposited SiO2 Gate Dielectrics

    • Author(s)
      チャンタパン アタウット、中野 佑紀、中村 孝、細井 卓治、志村 考功、渡部 平司
    • Organizer
      第74回応用物理学関係連合講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-24686008
  • [Presentation] 横方向液相エピタキシャル成長法により形成したGeSn-on-insulator層の電気特性評価

    • Author(s)
      梶村 恵子,細井 卓治,志村 考功,渡部 平司
    • Organizer
      第75回応用物理学関係連合講演会
    • Place of Presentation
      北海道大学(北海道)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 横方向液相成長法で作製したSi基板上GeSn細線の初期結晶方位とその安定性

    • Author(s)
      冨永幸平,梶村恵子,天本隆史,細井卓治,志村考功,渡部平司
    • Organizer
      第75回応用物理学関係連合講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 急速加熱処理により作製したGeSn-on-quartz構造のフォトルミネッセンス測定

    • Author(s)
      天本 隆史, 冨永 幸平, 梶村 恵子, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第62回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] 横方向液相成長法で作製したSi基板上GeSn細線の初期結晶方位とその安定性

    • Author(s)
      冨永 幸平,梶村 恵子,天本 隆史,細井 卓治,志村 考功,渡部 平司
    • Organizer
      第75回応用物理学関係連合講演会
    • Place of Presentation
      北海道大学(北海道)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24360120
  • [Presentation] Sub-1-nm EOT Schottky Source/Drain Germanium CMOS Technology with Low-temperature Self-aligned NiGe/Ge Junctions

    • Author(s)
      T. Hosoi, Y. Minoura, R. Asahara, H. Oka, T. Shimura, and H. Watanabe
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      Honolulu, HI, USA
    • Year and Date
      2014-06-08 – 2014-06-09
    • Data Source
      KAKENHI-PROJECT-25246028
  • [Presentation] 4H-SiC(0001)面のウェット酸化における水分子の役割

    • Author(s)
      永井 大介, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第75回応用物理学関係連合講演会
    • Place of Presentation
      北海道大学、札幌市
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24686008
  • [Presentation] Electrical and physical properties of SiO2 gate dielectrics grown on 4H-SiC

    • Author(s)
      細井 卓治、上西 悠介、チャンタパン アタウット、池口 大輔、中野 佑紀、中村 孝、志村 考功、渡部 平司
    • Organizer
      The 8th international conference on advanced materials upon the proven concept and continues the tradition of its seven predecessors (THERMEC2013)
    • Place of Presentation
      Las Vegas, NV, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686008
  • [Presentation] カソードルミネッセンス法による熱酸化 SiO2 /SiC 構造の評価

    • Author(s)
      福島悠太,Furkan Alan,樋口直樹,Atthawut Chanthaphan,細井卓治,志村考功,渡部平司
    • Organizer
      第75回応用物理学関係連合講演会
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25630124
  • [Presentation] AlON/SiO2積層ゲート絶縁膜によるSiC MOSデバイスのBTI特性改善

    • Author(s)
      チャンタパン アタウット、中野 佑紀、中村 孝、細井 卓治、志村 考功、渡部 平司
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館
    • Data Source
      KAKENHI-PROJECT-24686008
  • [Presentation] Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology

    • Author(s)
      H. Oka, Y. Minoura, R. Asahara, T. Hosoi, T. Shimura, and H. Watanabe
    • Organizer
      IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      San Diego, CA, USA
    • Year and Date
      2014-12-10 – 2014-12-13
    • Data Source
      KAKENHI-PROJECT-25246028
  • 1.  WATANABE Heiji (90379115)
    # of Collaborated Projects: 11 results
    # of Collaborated Products: 111 results
  • 2.  HOSOI Takuji (90452466)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 103 results
  • 3.  UMENO Masataka (50029071)
    # of Collaborated Projects: 7 results
    # of Collaborated Products: 19 results
  • 4.  TAGAWA Masahito (10216806)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 5.  OHMAE Nobuo (60029345)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 6.  MASHIKO Youji
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 7.  ISHIKAWA Yasuhiko (60303541)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  WADA Kazumi (30376511)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  KONDO Takashi (60205557)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  YASUTAKE Kiyoshi (80166503)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 11.  OHMI Hiromasa (00335382)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 12.  OHTA Hitoshi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  YOHJI Mashiko
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  小山 浩
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  柳沢 雅弘
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  YASUTAKE Yuhsuke
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 17.  CHANTHAPHAN Atthawut
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 9 results
  • 18.  國吉 望月
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 19.  吉越 章隆
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 20.  寺岡 有殿
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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