JIA Anwei 賈岸偉

… Alternative Names

買岸偉カガンイ

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Researcher Number	90280916
Affiliation (based on the past Project Information) *help	2004: Chiba University, Faculty of Engineering, Research Associate, 工学部, 助手 1999 – 2000: 千葉大学, 工学部, 助手 1996: CHIBA UNIVERSITY,FACULTY OF ENGINEERING,RESEARCH ASSOCIATE, 工学部, 助手
Review Section/Research Field	Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Except Principal Investigator 分子線エピタキシー / ZnCdS / MOVPE / ZnSe / ZnO / InN / AlN / GaN / Wide bandgap semiconductors / Crystal Polarity … More / Epitaxy / III-V nitrides / -族窒化物 / 窒化カリウム / 酸化亜鉛 / 窒化インジウム / 窒化アルミニュウム / 窒化ガリウム / ワイドギャップ化合物半導体 / 結晶極性 / エピタキシー / III-V族窒化物 / Doping / X-ray Diffraction / Theoretical Calculations / Cubic Structure Crystal / Hexagonal Structure Crystal / Molecular Beam Epitaxy / Multi Phase Structures / ドーピング / X線回折 / 理論解析 / 立方晶 / 六方晶 / マルチフェーズ構造 / REFLECTANCE DIFFERENCE / SURFACE PHOTO INTERFRENCE / BLUE LIGHT DEVICES / OPTICAL PROBE / II-VI COMPOUNDS / COMPOUND SEMICONDUCTOR / 反射率差法 / 表面光干渉法 / 青色発光デバイス / 光プローブ / II-VI族化合物 / 化合物半導体 Less

Study on the polarity control of hexagonal-structure widegap compound semiconductors and its effect on the material control
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  2001 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chiba University
Investigation of the Novel Characteristics of Widebandgap Semiconductor Materials Grown by Multi-Phase Epitaxy
- Principal Investigator
  
  KOBAYASHI Masakazu
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Waseda University
  Chiba University
DEVELOPMENT OF MULTIPLY PHOTO-ASSISTED MOVPE FOR FABRICATION OF SEMICONDUCTOR BLUE LASER DIODES
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chiba University

All 2002 2001

All Journal Article

[Journal Article] MOCVD growth of device-quality GaN on sapphire using a three-step approach2002
- Author(s)
  B.L.Liu, M.Lachab, A.Jia, A.Yoshikawa, K.Takahashi
- Journal Title
  
  J.Crystal Growth Vol.234
  
  Pages: 637-645
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity Control of GaN Grown on Sapphire Substrate by RF-MBE2002
- Author(s)
  K.Xu, N.Yano, A.W.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  J.Crystal Growth Vol.237-239
  
  Pages: 1003-1007
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] In-situ Real-time Analysis on Strain Relaxation Process in GaN Growth on Sapphire by RF-MBE2002
- Author(s)
  K.Xu, N.Yano, A.W.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  J.Crystal Growth Vol.237-239
  
  Pages: 998-1002
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Kinetic process in polarity selection of GaN Grown by RF-MBE2001
- Author(s)
  K.Xu, N.Yano, A.W.Jia, A.Yoshikawa, K.Takahashi
- Journal Title
  
  phys.stat.sol.(b) Vol.228,No.2
  
  Pages: 523-527
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Atomic Force Microscopy Study of GaN Grown on Al_2O_3 (0001) by LP-MOVPE2001
- Author(s)
  K.Xu, D.H.Lim, B.L.Liu, X.L.Du, G.H.Yu, A.W.Jia, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.639, G3.28
  
  Pages: 1-5
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity-controlled growth of GaN on Sapphire Substrate by MOVPE and RF-MBE2001
- Author(s)
  A.Yoshikawa, K.Xu, A.W.Jia, K.Takahashi
- Journal Title
  
  Proceedings of China-Japan Workshop on Nitride Semiconductor Materials and Devices
  
  Pages: 17-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Experimental investigation of inclusion of hexagonal GaN phase-domain by varying nitrogen-beam direction to a (III) axis in MBE growth of cubic GaN2001
- Author(s)
  H.Hayashi, A.Hayashida, A.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  J.Crystal Growth Vol.227-228
  
  Pages: 404-409
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Cross-sectional Cathodoluminescence Study on Ga-polar and N-polar GaN Epilayers2001
- Author(s)
  X.L.Du, D.H.Lim, K.Xu, B.L.Liu, A.W.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.639 G6.16
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Cross-sectional Cathodoluminescence Study on Ga-polar and N-polar GaN Epilayers2001
- Author(s)
  X.L.Du, D.H.Lim, K.Xu, B.L.Liu, A.W.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.639
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Atomic Force Microscopy Study of GaN Grown on Al_2O_3 (0001) by LP-MOVPE2001
- Author(s)
  K.Xu, D.H.Lim, B.L.Liu, X.L.Du, G.H.Yu, A.W.Jia, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.639
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Kinetic process in polarity selection of GaN Grown by RF-MBE2001
- Author(s)
  K.Xu, N.Yano, A.W.Jia, A.Yoshikawa, K.Takahashi
- Journal Title
  
  phys.stat.sol.(b) Vol.228, No.2
  
  Pages: 523-527
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121

1. YOSHIKAWA Akihiko (20016603)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
2. KOBAYASHI Masakazu (10241936)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. ISHITANI Yoshihiro (60291481)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. CHE Song-bek (00361410)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. OKAMOTO Tamotsu (80233378)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 松末俊夫 (20209547)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. KITAMURA Masayoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

JIA Anwei 賈 岸偉

買 岸偉 カ ガンイ

Research Projects

Research Products

Co-Researchers

Study on the polarity control of hexagonal-structure widegap compound semiconductors and its effect on the material control

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Investigation of the Novel Characteristics of Widebandgap Semiconductor Materials Grown by Multi-Phase Epitaxy

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

DEVELOPMENT OF MULTIPLY PHOTO-ASSISTED MOVPE FOR FABRICATION OF SEMICONDUCTOR BLUE LASER DIODES

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] MOCVD growth of device-quality GaN on sapphire using a three-step approach2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] Polarity Control of GaN Grown on Sapphire Substrate by RF-MBE2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] In-situ Real-time Analysis on Strain Relaxation Process in GaN Growth on Sapphire by RF-MBE2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] Kinetic process in polarity selection of GaN Grown by RF-MBE2001

Author(s)

Journal Title

Description

Data Source

[Journal Article] Atomic Force Microscopy Study of GaN Grown on Al_2O_3 (0001) by LP-MOVPE2001

Author(s)

Journal Title

Description

Data Source

[Journal Article] Polarity-controlled growth of GaN on Sapphire Substrate by MOVPE and RF-MBE2001

Author(s)

Journal Title

Description

Data Source

[Journal Article] Experimental investigation of inclusion of hexagonal GaN phase-domain by varying nitrogen-beam direction to a (III) axis in MBE growth of cubic GaN2001

Author(s)

Journal Title

Description

Data Source

[Journal Article] Cross-sectional Cathodoluminescence Study on Ga-polar and N-polar GaN Epilayers2001

Author(s)

Journal Title

Description

Data Source

[Journal Article] Cross-sectional Cathodoluminescence Study on Ga-polar and N-polar GaN Epilayers2001

Author(s)

Journal Title

Description

Data Source

[Journal Article] Atomic Force Microscopy Study of GaN Grown on Al_2O_3 (0001) by LP-MOVPE2001

Author(s)

Journal Title

Description

Data Source

[Journal Article] Kinetic process in polarity selection of GaN Grown by RF-MBE2001

Author(s)

Journal Title

Description

Data Source

JIA Anwei 賈岸偉

買岸偉カガンイ