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Kakimoto Koichi  柿本 浩一

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KAKIMOTO Koichi  柿本 浩一

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Researcher Number 90291509
Other IDs
External Links
Affiliation (Current) 2025: 東北大学, 金属材料研究所, 特任教授
Affiliation (based on the past Project Information) *help 2023 – 2024: 東北大学, 未来科学技術共同研究センター, 特任教授
2022: 東北大学, 未来科学技術共同研究センター, 教授
2012 – 2020: 九州大学, 応用力学研究所, 教授
2007 – 2009: Kyushu University, 応用力学研究所, 教授
2002 – 2004: 九州大学, 応用力学研究所, 教授 … More
1997 – 2000: 九州大学, 機能物質科学研究所, 助教授
1999: 州大学, 機能物質科学研究所, 助教授
1997: 九州大学, 大学院・総合理工学研究科, 助教授 Less
Review Section/Research Field
Principal Investigator
Crystal engineering / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Metal making engineering
Except Principal Investigator
Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 30010:Crystal engineering-related / Metal making engineering / 化学工学一般 / 表面界面物性
Keywords
Principal Investigator
結晶成長 / シリコン / SiC / シミュレーション / 転位 / 3次元解析 / 結晶工学 / 欠陥制御 / マルチフジックス / マルチフィジックス … More / Al2O3 / Al203 / Al203 / GaN / Convection / Electromagnetic force / Crystal growth / Silicon / 電磁場印加結晶成長 / バルク結晶成長 / 対流 / 電磁攪拌 / MIGRATION / PRESSURE / DIFFUSION / ELECTRONIC DEVICES / SEMICONDUCTOR / IMPURITY / POINT DEFECTS / MOLECULAR DYNAMICS / 拡散係数 / 酸素 / 移動 / 圧力 / 拡散 / 電子素子 / 半導体 / 不純物 / 点欠陥 / 分子動力学 / 結晶性長 / 残留応力 / シリコンカーバイド / ワイドバンドギャップ / 昇華法 / Si / 電磁場 … More
Except Principal Investigator
数値解析 / 磁場 / 結晶成長 / 結晶欠陥 / 基板 / パワー半導体 / ルツボフリー / 融液成長 / パワーデバイス / エピタキシャル成長 / 酸化ガリウム / 結晶成長シミュレーション / 単結晶成長 / SiC / エネルギー / 多形 / 表面 / 不純物 / 炭化ケイ素 / numerical analysis / magnetic field / continuous casting / Steel / 異形磁場 / カスプ磁場 / 鉄鋼連鋳 / 連鋳 / 鉄鋼 / TWO COILS MOTOR / GALLIUM / ROTATING MAGNETIC FIELD / CRYSTAL GROWTH / チョクラルスキー法 / 回転 / 2極モータ / ガリウム / 回転磁場 / マイクロマシン / エッチング / LIGA / リソグラフィ / LSI / シンクロトロン放射光 Less
  • Research Projects

    (11 results)
  • Research Products

    (130 results)
  • Co-Researchers

    (23 People)
  •  融液成長の限界を超越する新規ルツボフリー成長法によるGa2O3の成長と欠陥評価

    • Principal Investigator
      吉川 彰
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Tohoku University
  •  Polytype Controlled SiC Single Crystal Grwoth

    • Principal Investigator
      NISHIZAWA Shin-ichi
    • Project Period (FY)
      2018 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Kyushu University
  •  Development of simulator of crystal growth based on multi-physicsPrincipal Investigator

    • Principal Investigator
      KAKIMOTO KOICHI
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Kyushu University
  •  Development of quantitative analysis of defects in wide bandgap materialsPrincipal Investigator

    • Principal Investigator
      Kakimoto Koichi
    • Project Period (FY)
      2015 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Kyushu University
  •  Development of macro-nano combined growth method for energy savingPrincipal Investigator

    • Principal Investigator
      KAKIMOTO Koichi
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyushu University
  •  Development of new method of crystal growth using dynamic electromagnetic forcePrincipal Investigator

    • Principal Investigator
      KAKIMOTO Koichi
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyushu University
  •  Establishment of new method of crystal growth with well-controlled convection by electro-magnetic forcePrincipal Investigator

    • Principal Investigator
      KAKIMOTO Koichi
    • Project Period (FY)
      2002 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      KYUSHU UNIVERSITY
  •  The effect of magnetic field on the continuous steel casting process

    • Principal Investigator
      OZOE Hiroyuki
    • Project Period (FY)
      1998 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Metal making engineering
    • Research Institution
      KYUSHU UNIVERSITY
  •  九州シンクロトロン放射光のエレクトロニクス応用研究に関する調査研究

    • Principal Investigator
      黒木 幸令
    • Project Period (FY)
      1997
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      表面界面物性
    • Research Institution
      Kyushu University
  •  STUDY ON DEFECT FORMATION IN BULK CRYSTAL FOR ELECTRONIC DEVICESPrincipal Investigator

    • Principal Investigator
      KAKIMOTO Koichi
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Metal making engineering
    • Research Institution
      KYUSHU UNIVERSITY
  •  DISCUSSION OF THE EFFECT OF ROTATING MAGNETIC FIELD ON CRYSTAL GROWTH

    • Principal Investigator
      OZOE Hiroyuki
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      化学工学一般
    • Research Institution
      KYUSHU UNIVERSITY

All 2024 2023 2022 2019 2018 2017 2016 2015 2014 2013 2012 2010 2009 2008 2007 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] Studies on flow Instabilities in Bulk Crystal Growth2008

    • Author(s)
      Koichi Kakimoto, et al
    • Total Pages
      234
    • Publisher
      Transworld Research Network
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Book] Crystal Growth Technology2008

    • Author(s)
      Koichi Kakimoto, et al
    • Total Pages
      505
    • Publisher
      WILEY-VCH
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Book] Modeling of Magnetic Fields, AMERICAN INSTITUTE OF PHYSICS, PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOROGICALCRYSTAL GROWTH:FROM FUNDAMENTALS TO APPLICATIONS2007

    • Author(s)
      Koichi Kakimoto
    • Publisher
      Springer
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Book] 実験化学講座5 化学実験のための基礎技術2005

    • Author(s)
      柿本浩一
    • Publisher
      (株)丸善
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Heat transfer in β-Ga2O3 crystal grown through a skull melting method2024

    • Author(s)
      Kakimoto Koichi、Takahashi Isao、Tomida Taketoshi、Kochurikhin Vladimir V.、Kamada Kei、Nakano Satoshi、Yoshikawa Akira
    • Journal Title

      Journal of Crystal Growth

      Volume: 629 Pages: 127553-127553

    • DOI

      10.1016/j.jcrysgro.2023.127553

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-22H04961, KAKENHI-PROJECT-19H00672, KAKENHI-PROJECT-22H00204
  • [Journal Article] Study of twisting of β-Ga2O3 crystals based on optical absorption and thermal conductivity anisotropy in the crystals grown by the Czochralski method2024

    • Author(s)
      Kakimoto Koichi、Takahashi Isao、Tomida Taketoshi、Kochurikhin Vladimir V.、Kamada Kei、Nakano Satoshi、Yoshikawa Akira
    • Journal Title

      Journal of Crystal Growth

      Volume: 628 Pages: 127550-127550

    • DOI

      10.1016/j.jcrysgro.2023.127550

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-22H04961, KAKENHI-PROJECT-19H00672, KAKENHI-PROJECT-22H00204
  • [Journal Article] 3D calculation studies of dislocation density in a β-Ga2O3 crystal grown by vertical Bridgman method2023

    • Author(s)
      Kakimoto Koichi、Takahashi Isao、Tomida Taketoshi、Kamada Kei、Yao Yongzhao、Nakano Satoshi、Yoshikawa Akira
    • Journal Title

      Journal of Crystal Growth

      Volume: 609 Pages: 127126-127126

    • DOI

      10.1016/j.jcrysgro.2023.127126

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19H00672, KAKENHI-PROJECT-22H00204, KAKENHI-PROJECT-22H04961
  • [Journal Article] Relationship between carbon concentration and carrier lifetime in CZ-Si crystals2018

    • Author(s)
      Miyamura Y.、Harada H.、Nakano S.、Nishizawa S.、Kakimoto K.
    • Journal Title

      Journal of Crystal Growth

      Volume: 486 Pages: 56-59

    • DOI

      10.1016/j.jcrysgro.2018.01.020

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Journal Article] Effect of oxygen on dislocation multiplication in silicon crystals2018

    • Author(s)
      Wataru Fukushima, Hirofumi Harada, Yoshiji Miyamura Masato Imai, Satoshi Nakano, Koichi Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 486 Pages: 45-49

    • DOI

      10.1016/j.jcrysgro.2017.12.030

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Journal Article] Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth2018

    • Author(s)
      Liu Xin、Harada Hirofumi、Miyamura Yoshiji、Han Xue-feng、Nakano Satoshi、Nishizawa Shin-ichi、Kakimoto Koichi
    • Journal Title

      Journal of Crystal Growth

      Volume: 499 Pages: 8-12

    • DOI

      10.1016/j.jcrysgro.2018.07.020

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Journal Article] Silicon bulk growth for solar cells: Science and technology2017

    • Author(s)
      Koichi Kakimoto, Bing Gao, Satoshi Nakano, Hirofumi Harada, and Yoshiji Miyamura
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 (2) Issue: 2 Pages: 020101-020101

    • DOI

      10.7567/jjap.56.020101

    • NAID

      210000147405

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Journal Article] On the phase transformation of single-crystal 4H?SiC during nanoindentation2017

    • Author(s)
      Mitsuhiro Matsumoto, Hu Huang, Hirofumi Harada, Koichi Kakimoto and Jiwang Yan
    • Journal Title

      J. Phys. D: Appl. Phys.

      Volume: 50 Issue: 26 Pages: 265303-265303

    • DOI

      10.1088/1361-6463/aa7489

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Journal Article] Studyontheusageofacommercialsoftware(Comsol-Multiphysicss) for dislocationmultiplicationmodel2017

    • Author(s)
      B. Gallien, M.Albaric, T.Duffar, K.Kakimoto, M.M’Hamdi
    • Journal Title

      Journal of Crystal Growth

      Volume: 457 Pages: 60-64

    • DOI

      10.1016/j.jcrysgro.2016.05.027

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Journal Article] Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics2016

    • Author(s)
      Takahiro Kawamura, Mitsutoshi Mizutani, Yasuyuki Suzuki, Yoshihiro Kangawa, and Koichi Kakimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 3 Pages: 031301-031301

    • DOI

      10.7567/jjap.55.031301

    • NAID

      210000146126

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K13351, KAKENHI-PROJECT-16H03859
  • [Journal Article] Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory2016

    • Author(s)
      S. Araki, B. Gao, S. Nishizawa, S. Nakano, and K. Kakimoto
    • Journal Title

      Cryst. Res. Technol.

      Volume: 51, No. 5 Issue: 5 Pages: 344-348

    • DOI

      10.1002/crat.201500344

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15K13351
  • [Journal Article] Study on Mechanical Properties of Single-Crystal Silicon Carbide by Nanoindentation2015

    • Author(s)
      Mitsuhiro Matsumoto, Hirofumi Harada, Koichi Kakimoto and Jiwang Yan
    • Journal Title

      Applied Mechanics and Materials

      Volume: 806 Pages: 549-554

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K13351
  • [Journal Article] Study on Mechanical Properties of Single-Crystal Silicon Carbide by Nanoindentation2015

    • Author(s)
      M Matsumoto, H Harada, K Kakimoto, J Yan
    • Journal Title

      Advanced Materials Research

      Volume: 1136 Pages: 549-554

    • DOI

      10.4028/www.scientific.net/amr.1136.549

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13838, KAKENHI-PROJECT-15K13351
  • [Journal Article] Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model2014

    • Author(s)
      B. Gao, K.Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 386 Pages: 215-219

    • DOI

      10.1016/j.jcrysgro.2013.10.023

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method2014

    • Author(s)
      Bing Gao and Koichi Kakimoto
    • Journal Title

      Cryst. Growth Des.

      Volume: 14 (3) Issue: 3 Pages: 1272-1278

    • DOI

      10.1021/cg401789g

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory2014

    • Author(s)
      T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 385 Pages: 95-99

    • DOI

      10.1016/j.jcrysgro.2013.03.036

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals2014

    • Author(s)
      B. Gao, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 392 Pages: 92-97

    • DOI

      10.1016/j.jcrysgro.2014.02.005

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001).2014

    • Author(s)
      Ryosuke Iguchi, Takahiro Kawamura, Yasuyuki Suzuki, Masato Inoue, Yoshihiro Kangawa, Koichi Kakimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 065601 Issue: 6 Pages: 1-4

    • DOI

      10.7567/jjap.53.065601

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Highly efficient and stable implementation of the Alexander-Haasen model for numerical analysis of dislocationin crystalgrowth2013

    • Author(s)
      B. Gao n, S.Nakano,K.Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 369 Pages: 32-37

    • DOI

      10.1016/j.jcrysgro.2013.01.039

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Effect of the Inclusion of T ransparency on the Thermal Field and Interface Shape in Long-term Sublimation Growth of SiC Crystals2013

    • Author(s)
      Bing Gao and Koichi Kakimoto
    • Journal Title

      日本結晶成長学会誌

      Volume: Vol.40、No.1 Pages: 20-24

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in the [001] and [111] directions2013

    • Author(s)
      Bing Gao and Koichi Kakimoto
    • Journal Title

      J. Appl. Cryst.

      Volume: Volume 46, Issue 6 Issue: 6 Pages: 1771-1780

    • DOI

      10.1107/s002188981302517x

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Numerical investigation of the influence of cooling flux on the generation of dislocations in cylindrical mono-like silicon growth2013

    • Author(s)
      B. Gao, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 384 Pages: 13-20

    • DOI

      10.1016/j.jcrysgro.2013.09.002

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory2012

    • Author(s)
      T Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano Y Kangawa, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 352 Issue: 1 Pages: 177-180

    • DOI

      10.1016/j.jcrysgro.2012.01.023

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Analysis of growth velocity of SiC growth and by the Physical vapor transport method2012

    • Author(s)
      Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano and Shin-ichi Nishizawa
    • Journal Title

      Materials Science Forum

      Volume: 717-720 Pages: 25-28

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AIN crystals2012

    • Author(s)
      B. Gao, S. Nakano, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 338 Issue: 1 Pages: 69-74

    • DOI

      10.1016/j.jcrysgro.2011.11.030

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Numerical analysis of the velocity of SiC growth by the top seeding method2012

    • Author(s)
      F. Inui, B. Gao, S. Nakano, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 348 Issue: 1 Pages: 71-74

    • DOI

      10.1016/j.jcrysgro.2012.03.036

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Journal Article] Numerical Analysis of mc-Si Crystal Growth2010

    • Author(s)
      Koichi Kakimoto, et al
    • Journal Title

      Solid State Phenomena 156-158

      Pages: 193-198

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Numerical Analysis of mc-Si Crystal Growth2010

    • Author(s)
      Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X.J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa
    • Journal Title

      Solid State Phenomena 156-158,4

      Pages: 193-198

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Modeling and simulation of Si crystal growth from melt2009

    • Author(s)
      Lijun Liu, Hiroaki Miyazawa, Satoshi Nakano, Xin Liu, Zaoyang Li, Koichi Kakimoto
    • Journal Title

      Physica status solidi C6,3

      Pages: 645-652

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Analysis of local segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method2009

    • Author(s)
      Koichi Kakimoto, et al
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2313-2316

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Analysis of local segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method2009

    • Author(s)
      Koichi Kakimoto, et al
    • Journal Title

      Journal of Crystal Growth (In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Analysis of local segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method2009

    • Author(s)
      Koichi Kakimoto, Lijun Liu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2313-2316

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Study on thermal stress in a silicon ingot during a unidirectional solidification process2008

    • Author(s)
      X.J. Chen, S. Nakano, L.J. Liu, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4330-4335

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Optimization of the design of a crucible for a SiC sublimation growth system using a global model2008

    • Author(s)
      X.J. Chen, L.J. Liu, H. Tezuka, Y. Usuki, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 1810-1814

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Numerical Analyses of Czochralski Furnace for Single Crystal Growth2007

    • Author(s)
      Koichi KAKIMOTO, Takao TSUKADA, Nobuyuki IMAISHI
    • Journal Title

      Journal of the Heat Society of Japan 46196

      Pages: 49-57

    • NAID

      10019859850

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Partly three-dimensional calculation of silicon Czochralski growth with a transverse magnetic field2007

    • Author(s)
      Koichi Kakimoto, et. al.
    • Journal Title

      Journal of Crystal Growth 303

      Pages: 135-140

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Numerical investigation of crystal growth process of bulk Si and nitrides-areview2007

    • Author(s)
      K. Kakimoto, et. al.
    • Journal Title

      Cryst.Res.Technol 42, No.12

      Pages: 1185-1189

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Numerical investigation of induction heating and heat transfer in a SiC growth system2007

    • Author(s)
      X.J. Chen, L.J. Liu, H Tezuka, Y. Usuki, K. Kakimoto
    • Journal Title

      Cryst. Res. Technol. 42,10

      Pages: 971-975

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Numerical Analyses of Czochralski Furnace for Single Crystal Growth2007

    • Author(s)
      Koichi Kakimoto, et. al.
    • Journal Title

      Journal of the Heat Society of Japan 46, No.196

      Pages: 49-57

    • NAID

      10019859850

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Numerical investigation of crystal growth process of bulk Si and nitrides-a review2007

    • Author(s)
      K. Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X.J. Chen, Y. Kangawa
    • Journal Title

      Cryst. Res. Technol. 42,12

      Pages: 1185-1189

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Journal Article] Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields2005

    • Author(s)
      Koichi Kakimoto, Takashige Shinozaki, Yoshio Hashimoto
    • Journal Title

      International Journal of Materials and Product Technology 22・1/2/3

      Pages: 84-94

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Silicon crystal growth from the melt : Analysis from atomic and macro scales2005

    • Author(s)
      Koichi Kakimoto, Lijun Liu, Tomonori Kitashima, et al.
    • Journal Title

      Crystal Research and Technology 40,No.4-5

      Pages: 307-312

    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Numerical study of the effect of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth2005

    • Author(s)
      Koichi Kakimoto, Lijun Liu
    • Journal Title

      Crystal Research and Technology 38,No.7-8

      Pages: 716-725

    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Silicon crystal growth from the melt : Analysis from atomic and macro scales2005

    • Author(s)
      Koichi Kakimoto, Lijun Liu, Tomonori Kitashima, et al.
    • Journal Title

      Crystal Research and Technology 40, No.4-5

      Pages: 307-312

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Fundamentals for chemical experiment2005

    • Author(s)
      Koichi Kakimoto
    • Journal Title

      Jikken Kagaku Koza 5

      Pages: 259-270

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields2005

    • Author(s)
      Koichi Kakimoto, Takashige Shinozaki, Yoshio Hashimoto
    • Journal Title

      Int.J.of Materials and Product Technology 22・1/2/3

      Pages: 84-94

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth2005

    • Author(s)
      Koichi Kakimoto, Lijun Liu
    • Journal Title

      Crystal Research and Technology 38, No.7-8

      Pages: 716-725

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique2004

    • Author(s)
      Tomonori Kitashima, Lijun Liu, Kenji Kitamura, Koichi Kakimoto
    • Journal Title

      Journal of Crystal Growth 266

      Pages: 109-116

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Effects of shape of an inner crucible on convection of lithium niobate melt in a double-crucible Czochralski process using the accelerated crucible rotation technique2004

    • Author(s)
      Tomonori Kitashima, Lijun Liu, Kenji Kitamura, Koichi Kakimoto
    • Journal Title

      Journal of Crystal Growth 267・3-4

      Pages: 574-582

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Effects of shape of an inner crucible on convection of lithium niobate melt in a double-crucible Czochralski process using the accelerated crucible rotation2004

    • Author(s)
      Tomonori Kitashima, Lijun Liu, Kenji Kitamura, Koichi Kakimoto
    • Journal Title

      Journal of Crystal Growth 267・3-4

      Pages: 574-582

    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification2004

    • Author(s)
      Lijun Liu, Koichi Kakimoto, Toshinori Taishi, Keigo Hoshikawa
    • Journal Title

      Journal of Crystal Growth 265

      Pages: 399-409

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Journal Article] Numerical Analysis of Impurity Transport in a Unidirectional Solidification Furnace for Multicrystalline Silicon

    • Author(s)
      Bing Gao, Satoshi Nakano, Koichi Kakimoto
    • Journal Title

      日本結晶成長学会誌 36

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Patent] ハイブリッドEBセル2003

    • Inventor(s)
      柿本 浩一, 高橋 弘
    • Industrial Property Rights Holder
      エイコーエンジニアリング
    • Industrial Property Number
      平15-265437
    • Filing Date
      2003-11-15
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350010
  • [Presentation] ルツボレスで作製したβ-Ga2O3結晶の成長方位依存性2023

    • Author(s)
      高橋勲、Vladimir Kochurikhin、富田健稔、菅原孝昌、庄子育宏、鎌田圭、柿本浩一、吉川彰
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] 結晶成長における数値計算と実験との融合2023

    • Author(s)
      柿本浩一
    • Organizer
      第52回結晶成長国内会議
    • Invited
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] 3D analysis of dislocation density in a Ga2O3 crystal grown by a vertical Bridgman method2023

    • Author(s)
      Koichi Kakimoto, Isao Takahashi, Taketoshi Tomida, Yongzhao Yao, Yusuke Kida, Kei Kamada, Satoshi Nakano, Yukari Ishikawa, Akira Yoshikawa
    • Organizer
      International Conference on Crystal Growth and Epitaxy-ICCGE-20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] ミストCVD法におけるGa2O3薄膜成長速度のGa原料種依存性2023

    • Author(s)
      赤岩和明、市野邦男、高橋勲、柿本浩一、吉川彰
    • Organizer
      第84回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] 垂直ブリッジマン成長時における高指数面成長Ga2O3の転位密度解析2023

    • Author(s)
      柿本浩一、高橋勲、富田健稔、鎌田圭、Vladimir V. Kochurikhin、中野智、姚永昭、石川由香里、吉川彰
    • Organizer
      第84回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] OCCC法によるβ-Ga2O3単結晶の育成と成長条件の検討2022

    • Author(s)
      高橋勲, Vladimir Kochurikhin, 富田健稔, 姚永昭, 佐藤功二, 石川由加里, 菅原孝昌, 庄子育宏, 鎌田圭, 柿本浩一, 吉川彰
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] Evaluation of b-Ga2O3 crystalline quality grown by crucible-free technique2022

    • Author(s)
      I. Takahashi, V. Kochurikhin, T. Tomida, T. Sugawara, Y. Yao, K. Sato, Y. Ishikawa, K. Kamada, K. Kakimoto and A. Yoshikawa
    • Organizer
      The 8th International Symposium on Advanced Science and Technology of Silicon Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] The crystalline quality of b-Ga2O3 single crystals grown by the specially-developed crucible free growth technique2022

    • Author(s)
      I. Takahashi, V. Kochurikhin, T. Tomida, Y. Shoji, G. Liudmila, T. Sugawara, Y. Yao, K. Sato, Y. Ishikawa, K. Kamada, K. Kakimoto and A. Yoshikawa
    • Organizer
      The 19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] スカルメルト法を応用した新規ルツボフリー結晶育成法における酸化物単結晶育成の形状制御手法2022

    • Author(s)
      富田健稔,高橋勲,V. Kochurikhin,庄子育宏,鎌田圭,柿本浩一,吉川彰
    • Organizer
      第51回結晶成長国内会議
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] 垂直ブリッジマン成長時におけるβ型酸化ガリウムの転位密度解析2022

    • Author(s)
      柿本浩一,高橋 勲,富田 健稔,鎌田 圭,姚 永昭, 石川 由加里, 中野 智, 吉川 彰
    • Organizer
      第51回結晶成長国内会議
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] A new growth technique for b-Ga2O3 single crystals without a precious metal crucible2022

    • Author(s)
      I. Takahashi, V. Kochurikhin, T. Tomida, T. Sugawara, Y. Shoji, K. Kamada, K. Kakimoto and A. Yoshikawa
    • Organizer
      The International Workshop on Gallium Oxide and Related Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22H00204
  • [Presentation] 結晶成長における実験とシミュレーションのシナジー効果:欠陥をどこまで予測可能か2019

    • Author(s)
      柿本 浩一
    • Organizer
      第66回応用物理学会 春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Collaboration of Numerical and Experimental studies on Crystal Growth Processes2019

    • Author(s)
      Koichi Kakimoto
    • Organizer
      International Symposium on Modeling of Crystal Growth Processes and Devices(MCGPD-2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Effect of oxygen on dislocation density in si single crystal for solar cells during solidification and cooling process2018

    • Author(s)
      Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, and Koichi Kakimoto
    • Organizer
      10th International Workshop on Crystalline Silicon for Solar Cells
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Numerical investigation and experimental validation of crystal growth of semiconductors2018

    • Author(s)
      Koich Kakimoto
    • Organizer
      International Symposium & School on Crystal Growth Fundamentals
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] AlN結晶成長の昇華法におけるシード面近傍の物質流束解析2017

    • Author(s)
      間地 雄大、中野 智、柿本 浩一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] INFLUENCE OF CARRIER CONCENTRATION ON BULK LIFETIME IN CZ-SI CRYSTAL2017

    • Author(s)
      K. Kakimoto
    • Organizer
      21st American Conference on Crystal Growth and Epitaxy (ACCGE-21)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Numerical analysis of dislocation density in Si single crystal with oxygen diffusion2017

    • Author(s)
      Wataru Fukushima, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura Koichi Kakimoto
    • Organizer
      7th International Workshop on Crystal Growth TechnologyPotsdam
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Mass-flux Analysis of AlN Crystal Growth at a Seed Face in PVT Method2017

    • Author(s)
      Yudai Maji, Satoshi Nakano, Koichi Kakimoto
    • Organizer
      7th International Workshop on Crystal Growth TechnologyPotsdam
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Crystal Growth of Power Devices2017

    • Author(s)
      Koichi Kakimoto
    • Organizer
      CGCT-7
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Crystal growth for power devices and PVs2017

    • Author(s)
      Koichi Kakimoto
    • Organizer
      ISCGSCT2017
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Effect of Oxygen on Dislocation Multiplication during Growth of Crystalline Silicon for Solar Cell2017

    • Author(s)
      Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura and Koichi Kakimoto
    • Organizer
      7th International Workshop on Crystal Growth TechnologyPotsdam
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Multi-scale Modelling of Crystal Growth: from Silicon to Wide bandgap materials2017

    • Author(s)
      Koichi Kakimoto
    • Organizer
      THE 9th INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS, ROCAM 2017 & THE 2nd INTERNATIONAL SYMPOSIUM ON DIELECTRIC MATERIALS AND APPLICATIONS, ISyDMA 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] ANALYSIS OF RE-MELTING PROCESS OF SILICON GROWN BY TRANSVERSE MAGNETIC FIELD APPLIED CZ METHOD2017

    • Author(s)
      K. Kakimoto
    • Organizer
      21st American Conference on Crystal Growth and Epitaxy (ACCGE-21)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] AlN結晶成長の昇華法における物質流束解析2017

    • Author(s)
      間地雄大,中野智,柿本浩一
    • Organizer
      第46回結晶成国内会議(JCCG-46)
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Effect of oxygen atoms on dislocation multiplication in a silicon crystal2016

    • Author(s)
      W. Fukushima, B. Gao, S. Nakano, H. Harada, Y. Miyamura, and K. Kakimoto
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya Congress Center
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13351
  • [Presentation] Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling proces2016

    • Author(s)
      S. Nakano, B. Gao, K. Kakimoto
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya Congress Center
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] Relationship between the Dislocation Density and Residual Stress in a GaN Crystal during the Cooling Process2016

    • Author(s)
      S. Nakano, B. Gao, K. Kakimoto
    • Organizer
      The 7th International Symposium on Advanced Science and Technology of Silicon Materials
    • Place of Presentation
      Sheraton Kona Resort & Spa at Keauhou Bay, Hawaii, USA
    • Year and Date
      2016-11-21
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13351
  • [Presentation] GaN 単結晶における基板と冷却速度の転位密度に与える影響2016

    • Author(s)
      中野 智、高 冰、柿本 浩一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東工大大岡山キャンパス、東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K13351
  • [Presentation] Crystal growth of AlN: from atomic scale to macro scale2016

    • Author(s)
      Koichi Kakimoto, Satoshi Nakano, Yoshihiro Kangawa
    • Organizer
      E-MRS 2016 Fall Meeting
    • Place of Presentation
      Central Campus of Warsaw University of Technology(Warsaw、Poland)
    • Year and Date
      2016-09-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03859
  • [Presentation] EFFECT OF COOLING RATE ON GROWN-IN DISLOCATION MULTIPLICATION ON PRISMATIC SLIP PLANES FOR GAN SINGLE CRYSTAL2015

    • Author(s)
      Satoshi Nakano, Bing Gao, Koichi Kakimoto
    • Organizer
      ACCGE-20/OMVPE-17
    • Place of Presentation
      Big Sky, Montana, USA
    • Year and Date
      2015-08-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13351
  • [Presentation] Numerical Analysis of the Effect of Substrate and Cooling Rate on Grown-in Dislocation Multiplication for GaN Single Crystal2015

    • Author(s)
      S. Nakano, B. Gao, K. Kakimoto
    • Organizer
      The 8th International Workshop on Modeling in Crystal Growth
    • Place of Presentation
      Spa, Belgium
    • Year and Date
      2015-11-15
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13351
  • [Presentation] ATOMIC AND MACRO SCALE CALCULATIONS ON CRYSTAL GROWTH OF WIDE BANDGAP SEMICONDUCTORS2015

    • Author(s)
      Koichi Kakimoto, Shin-ichi NIshizawa, Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi
    • Organizer
      ACCGE-20/OMVPE-17
    • Place of Presentation
      Big Sky, Montana, USA
    • Year and Date
      2015-08-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13351
  • [Presentation] 物理的気相輸送法を用いた4H-SiC 単結晶成長における基底面転位の3 次元2014

    • Author(s)
      高  冰,中野 智,柿本浩一
    • Organizer
      第61 回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] PVT 成長法を用いた4H-SiC 単結晶における基底面転位の低減に対するヒーター電力制御の最適化2014

    • Author(s)
      高  冰,中野 智,柿本浩一
    • Organizer
      第61 回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] PVT を用いたSiC 結晶成長における不純物混入解析2014

    • Author(s)
      柿本浩一,Bing Gao,中野 智,寒川義裕,西澤伸一
    • Organizer
      第61 回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] コンピュータシミュレーションによる多結晶シリコンの凝固過程と鉄不純物分布2013

    • Author(s)
      柿本浩一
    • Organizer
      専門研究会(第一グループ)「シリコン太陽電池の金属不純物評価とゲッタリング技術」
    • Place of Presentation
      つま恋(招待講演)
    • Year and Date
      2013-03-11
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] SiCバルク結晶成長の現状と将来2013

    • Author(s)
      柿本浩一、Gao Bing 、白桃拓哉、寨川義裕、西澤伸一
    • Organizer
      パワーデバイス用シリコンおよび関連半導体材料にする研究会(第3回) 2013年千葉工業大学
    • Place of Presentation
      千葉工業大学(招待講演)
    • Year and Date
      2013-03-15
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] PVT成長法におけるAlexander-Haasenモデルを用いた4H-SiC単結晶の転位密度塑性挙動モデル2013

    • Author(s)
      高冰,西澤伸一,柿本浩一
    • Organizer
      第43回結晶成長国内会議
    • Place of Presentation
      長野市生涯学習センター
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth2013

    • Author(s)
      B. Gao, S. Nishizawa, K. Kakimoto
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学、京都
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] コンピュータシミュレーションによる多結晶シリコンの凝固過程と格子欠陥分布2013

    • Author(s)
      柿本浩一
    • Organizer
      第2回微量元素分析・マッピング技術研究会
    • Place of Presentation
      静岡理工科大学(招待講演)
    • Year and Date
      2013-03-12
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory2013

    • Author(s)
      Koichi Kakimoto, Takuya Shiramomo, Bing Gao, Frederic Mercier, Shin-ichi Nishizawa, Satoshi Nakano
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
    • Place of Presentation
      Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] 昇華法成長SiC結晶中への不純物混入解析2013

    • Author(s)
      柿本浩一,高冰,白桃拓哉,西澤伸一,中野智,寒川義裕
    • Organizer
      第43回結晶成長国内会議
    • Place of Presentation
      長野市生涯学習センター
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] SiC結晶成長の分子動力学シミュレーション2012

    • Author(s)
      速水義之, 河村貴宏, 鈴木泰之, 寒川義裕, 柿本浩一
    • Organizer
      第42回結晶成長国内会議NCCG-42
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2012-11-09
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] Numerical and experimental investigation of directional solidification of silicon with a seed2012

    • Author(s)
      K. Kakimoto
    • Organizer
      CSSC6
    • Place of Presentation
      Aix-les-Bains, France(招待講演)
    • Year and Date
      2012-10-10
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] PVTを用いたSiCバルク結晶成長における転位および多結晶分布の非定常数値解析2012

    • Author(s)
      高冰, 中野智, 西澤伸一, 柿本浩一
    • Organizer
      第42回結晶成長国内会議NCCG-42
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2012-11-09
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] シリコン結晶系太陽電池の結晶成長と変換効率2012

    • Author(s)
      柿本浩一, Bing Gao,中野 智, 寒川義裕, 原田博文
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学(招待講演)
    • Year and Date
      2012-09-11
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] Numerical investigation of solidification process of multi-crystalline silicon grown by directional solidification method2009

    • Author(s)
      Koichi Kakimoto
    • Organizer
      3rd International Workshop on Science and Technology of Crystalline Si Solar Cells
    • Place of Presentation
      Trondheim, Norway
    • Year and Date
      2009-06-03
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Numerical investigation of heat and mass transfer during a unidirectional solidification process in crystalline silicon for solar cells2009

    • Author(s)
      K.Kakimoto
    • Organizer
      216th ECS Meeting-Vienna
    • Place of Presentation
      Austria
    • Year and Date
      2009-10-05
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Bulk crystal growth from the melt : experimental and numerical approaches2009

    • Author(s)
      Koichi KAKIMOTO
    • Organizer
      ROMANIAN CONFERENCE ON ADVANCED MATERIALS, ROCAM 2009
    • Place of Presentation
      BRASOV, ROMANIA
    • Year and Date
      2009-08-25
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Bulk crystal growth from the melt: experimental and numerical approaches2009

    • Author(s)
      Koichi KAKIMOTO
    • Organizer
      ROMANIAN CONFERENCE ON ADVANCED MATERIALS, ROCAM 2009
    • Place of Presentation
      BRASOV, ROMANIA
    • Year and Date
      2009-08-25
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Numerical investigation of heat and mass transfer during a unidirectional solidification process in crystalline silicon for solar cells2009

    • Author(s)
      Koichi Kakimoto
    • Organizer
      IWMCG-6
    • Place of Presentation
      LAKE GENEVA, WISCONSIN, USA
    • Year and Date
      2009-08-11
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] 半導体結晶成長の数値解析と育成実験2009

    • Author(s)
      柿本浩一
    • Organizer
      日本セラミックス協会2009年第22回秋季シンポジウム
    • Place of Presentation
      愛媛大学
    • Year and Date
      2009-09-18
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Numerical analysis of mc-Si crystal growth2009

    • Author(s)
      K.Kakimoto
    • Organizer
      GADEST 2009
    • Place of Presentation
      Dolnsee-Schorfheidenorth of Berlin, Germany,
    • Year and Date
      2009-09-27
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Simulation of Si casting2008

    • Author(s)
      K. Kakimoto
    • Organizer
      IWCGT-4
    • Place of Presentation
      Beatenberg above Interlaken, Switzerland
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Time Dependent and/or 3D Investigation of Carbon, Nitrogen, and Dislocation Distributions in a Silicon Crystal During Solidification Process2008

    • Author(s)
      Koichi Kakimoto
    • Organizer
      18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes
    • Place of Presentation
      Vail, Colorado
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Modeling of crystal growth for solar cell2008

    • Author(s)
      Koichi KAKIMOTO
    • Organizer
      ICNPAA 2008 : Mathematical Problems in E ngineering, Aerospace and Sciences
    • Place of Presentation
      Faculty of Engineering of th University of Genoa, Italy
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Modeling of crystal growth for solar cell2008

    • Author(s)
      Koichi KAKIMOTO
    • Organizer
      ICNPAA 2008: Mathematical Problems in Engineering, Aerospace and Sciences
    • Place of Presentation
      aculty of Engineering of the University of Genoa, Italy
    • Year and Date
      2008-06-27
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Global Modeling of a Directional Solidification Process for Multi-Crystalline Silicon2007

    • Author(s)
      K. Kakimoto
    • Organizer
      22nd European Photovoltaic Solar Energy Conference and Exhibition
    • Place of Presentation
      FIERA MILANO / Rho in Milan, Italy
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Global Modeling of a Directional Solidification Process for Multi-Crystalline Silicon2007

    • Author(s)
      K. Kakimoto, L. Liu, S. Nakano
    • Organizer
      2nd European Photovoltaic Solar Energy Conference and Exhibition
    • Place of Presentation
      FIERA MILANO/Rho in Milan, Italy
    • Year and Date
      2007-09-03
    • Data Source
      KAKENHI-PROJECT-19360012
  • [Presentation] Crystal growth of atomic scale and macro scale calculations

    • Author(s)
      Koichi Kakimoto
    • Organizer
      DKT-2015
    • Place of Presentation
      Goethe- Universiat, Frnakfurt am Main, GERMANY
    • Year and Date
      2015-03-04 – 2015-03-06
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] 単結晶SiCのナノインデンテーションに関する研究

    • Author(s)
      松本光弘、原田博文、柿本浩一、閻 紀旺
    • Organizer
      2015年精密工学会春季大会学術講演会
    • Place of Presentation
      東洋大学 白山キャンパス
    • Year and Date
      2015-03-17 – 2015-03-19
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] Crystal Growth of Energy Production and Energy Savin

    • Author(s)
      Koichi KAKIMOTO
    • Organizer
      IUMRS-ICA 2014
    • Place of Presentation
      Fukuoka University, Fukuoka
    • Year and Date
      2014-08-24 – 2014-08-30
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] 分子動力学法による4H-SiC のらせん転位解析

    • Author(s)
      水谷充利,河村貴宏, 鈴木泰之,寒川義裕,柿本浩一
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] 数値解析による結晶成長の定量予測:マクロと原子スケールの融合

    • Author(s)
      柿本 浩一
    • Organizer
      NCCG-44
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2014-11-06 – 2014-11-08
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] Crystal growth of SiC for power devices

    • Author(s)
      Koichi Kakimoto
    • Organizer
      CGCT-6
    • Place of Presentation
      Ramada Plaza, Jeju, KOREA
    • Year and Date
      2014-06-11 – 2014-06-14
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] SiC crystal growth of electrical and optical devices

    • Author(s)
      K. Kakimoto
    • Organizer
      39th International Conference and Exposition on Advanced Ceramics and Composites
    • Place of Presentation
      Daytona Beach Florida, USA
    • Year and Date
      2015-01-25 – 2015-01-30
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] 二次元核形成理論を用いたSiC昇華法成長における多形安定性の非定常解析

    • Author(s)
      荒木清道,高冰,中野智,西澤伸一,柿本浩一
    • Organizer
      NCCG-44
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2014-11-06 – 2014-11-08
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] SiC 表面分解法におけるステップ端からのグラフェン成長シミュレーション

    • Author(s)
      雨川将大,吉村善徳,河村貴宏,鈴木泰之,寒川義裕,柿本浩一
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] SiC表面分解法によるステップ端近傍のグラフェン成長シミュレーション

    • Author(s)
      土井優太,井口綾佑,河村貴宏,鈴木泰之,寒川義裕,柿本浩一
    • Organizer
      NCCG-44
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2014-11-06 – 2014-11-08
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] 分子動力学法によるらせん転位を含む4H-SiCの歪エネルギー解析

    • Author(s)
      水谷充利,河村貴宏,鈴木泰之,寒川義裕,柿本浩一
    • Organizer
      NCCG-44
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2014-11-06 – 2014-11-08
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] 二次元核形成理論を用いたSiC 昇華法成長における多形安定性の非定常解析

    • Author(s)
      荒木清道,高  冰, 中野 智,西澤伸一,柿本浩一
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24360012
  • [Presentation] Three-dimensional modeling of basal plane dislocations in 4H-SiC

    • Author(s)
      Bing Gao, Satoshi Nakano, Koichi Kakimoto
    • Organizer
      E-MRS 2014 SPRING MEETING
    • Place of Presentation
      Congress Center,Lille, France
    • Year and Date
      2014-05-27 – 2014-05-29
    • Data Source
      KAKENHI-PROJECT-24360012
  • 1.  KANGAWA Yoshihiro (80423557)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 45 results
  • 2.  NISHIZAWA Shin-ichi (40267414)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 14 results
  • 3.  OZOE Hiroyuki (10033242)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 4.  LIU Lijun (00380535)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 16 results
  • 5.  TAGAWA Toshio (90294983)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 6.  KANGAWA Yoshihiro (90327320)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  UDA Satoshi (90361170)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  HUANG Xinming (80375104)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  IWAMOTO Mitsuo (80232718)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  HIRANO Hiroyuki (60264115)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  KAMAKURA Katsuyoshi (40042832)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  HOSHIKAWA Keigo (10231573)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 13.  ISHII Hideo (50038551)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  黒木 幸令 (40234596)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  日高 昌則 (50037298)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  佐道 泰造 (20274491)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  鶴島 稔夫 (10236953)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  橋本 良夫 (80180842)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 19.  吉川 彰 (50292264)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 10 results
  • 20.  赤岩 和明 (90778010)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 21.  高橋 浩之
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results
  • 22.  鎌田 圭
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 3 results
  • 23.  閻 紀旺
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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