MURAKAMI Hisashi 村上尚

… Alternative Names

MURAKAMI Hajime 村上尚

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Researcher Number	90401455
Other IDs
Affiliation (Current)	2025: 東京農工大学, 工学(系)研究科(研究院), 教授
Affiliation (based on the past Project Information) *help	2011 – 2024: 東京農工大学, 工学(系)研究科(研究院), 准教授 2013 – 2014: 東京農工大学, 大学院工学研究院, 准教授 2011 – 2012: 東京農工大学, 大学院・工学研究院, 准教授 2010: 東京農工大学, 大学院・工学研究院, 助教 2007 – 2009: 東京農工大学, 大学院・共生科学技術研究院, 助教 2006: 東京農工大学, 大学院共生科学技術研究院, 助手
Review Section/Research Field	Principal Investigator Crystal engineering / Applied materials science/Crystal engineering / Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related / Basic Section 30010:Crystal engineering-related Except Principal Investigator Crystal engineering / Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Science and Engineering / Science and Engineering
Keywords	Principal Investigator エピタキシャル成長 / 窒化ガリウム / 窒化物半導体 / 結晶成長 / トリハライド気相成長 / 転位 / ワイドバンドギャップ / 半極性 / エピタキシャル / ハライド気相成長 … More / 低転位密度 / ヘテロ界面 / 窒化アルミニウムガリウム / 加工サファイア基板 / 低転位 / トリハライド / 混晶 / 結晶工学 / 自立基板 / 化合物半導体 / 基板 / 気相成長 / トリハライド気相成長法 / 半導体 / 砒化ガリウム / 異方性エッチング / 基板加工 / 選択成長 / 高指数面 / III族窒化物半導体 / 窒化インジウム … More Except Principal Investigator エピタキシャル成長 / 窒化物半導体 / 不純物 / HVPE法 / 窒化アルミニウム / バルク結晶 / 気相成長 / THVPE / HVPE / 結晶工学 / HVPE成長 / 自立基板結晶 / ナノコラム / 薄膜 / 分子線エピタキシー（MBE） / 赤色LED / X線その場観察 / MBE / ヘテロ界面 / ヘテロエピタキシャル成長 / In系窒化物半導体 / 拡張熱力学解析 / 相整合混晶 / 相混在面 / 反応解析 / 相混在 / バンドエンジニアリング / 格子引き込み / 混晶成長 / 発現相制御 / 非熱平衡 / 熱平衡 / Ⅲ族セスキ酸化物半導体 / ハライド気相成長法 / ミスト化学気相堆積法 / 非熱平衡成長 / 熱平衡成長 / 準安定相 / 安定相 / Ⅲ族セスキ酸化物半導体結晶 / PVT法 / 導電性制御 / エッチピット / 転位 / Siドーピング / ショットキーバリアダイオード / ドーピング / n形導電性 / 点欠陥 / 大陽電池材料 / 発光素子材料 / InGaN / 太陽電池 / 発光素子 / InGaN三元混晶 / 受光材料 / 発光材料 / 三元混晶 / 窒化物結晶 / 深紫外発光ダイオード / 昇華法 / MOVPE法 / 深紫外線LED / 深紫外光透過性 / 転位密度 / 原料分子制御 / 窒化物 / 窒化ガリウム / エピタキシャル / 結晶成長 / A1GaN / A1N / A1系窒化物 / AIGaN / AIN / AlGaN / AlN / HVPE成 / 原料分子制御法 / Al系窒化物 / 厚膜エピタキシー Less

Fabrication of composition-controlled InGaN alloy thick films by controlling precursor molecules based on thermodynamicsPrincipal Investigator
- Principal Investigator
  
  村上尚
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related
- Research Institution
  Tokyo University of Agriculture and Technology
Creation of ultra-low defect gallium nitride crystals using a novel hybrid-type high-speed vapor phase epitaxyPrincipal Investigator
- Principal Investigator
  
  村上尚
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo University of Agriculture and Technology
Control of heterointerface region in the heteroepitaxial growth of In-based nitride semiconductors
- Principal Investigator
  
  Yamaguchi Tomohiro
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Kogakuin University
Single-process fabrication of group-III nitride pseudo-substrates and devices via vapor phase epitaxy using solid chloridesPrincipal Investigator
- Principal Investigator
  
  Murakami Hisashi
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Tokyo University of Agriculture and Technology
Bottom up creation of singularities by utilization of equilibrium and non-equilibrium crystal growth from vapor phase
- Principal Investigator
  
  Kumagai Yoshinao
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo University of Agriculture and Technology
High speed growth of high quality, ultra-thick gallium nitride crystal using newly developed source materialsPrincipal Investigator
- Principal Investigator
  
  Murakami Hisashi
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Realization of n-type AlN by clarifying the mechanism of point defect formation in bulk AlN crystal
- Principal Investigator
  
  Kumagai Yoshinao
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Thick and high quarity InGaN growth by THVPE
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Fabrication of non-polar GaN and nitride semiconductor crystals using newly developed control technique of crystal planesPrincipal Investigator
- Principal Investigator
  
  MURAKAMI HISASHI
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxy
- Principal Investigator
  
  KUMAGAI Yoshinao
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
New Growth Method for Bulk GaN using molecule-controlling method
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Investigation of crystalline orientation of III-nitride semiconductors grown on high-index and non-polar oriented GaAs substratesPrincipal Investigator
- Principal Investigator
  
  MURAKAMI Hisashi
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Improvements in crystalline quality of InN for the realization of P-type doping by using a growth mode controlPrincipal Investigator
- Principal Investigator
  
  MURAKAMI Hisashi
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Thick epitaxial growth of AlN and AlGaN by using controlling molecules of source precursors
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo University of Agriculture and Technology

[Book] 次世代パワー半導体の開発・評価と実用化2022
- Author(s)
  村上尚、熊谷義直
- Total Pages
  414
- Publisher
  エヌ・ティー・エス
- ISBN
  9784860437671
- Data Source
  KAKENHI-PROJECT-19H02614
[Book] GaNパワーデバイスの技術展開(分担執筆)2012
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Total Pages
  264
- Publisher
  サイエンス&テクノロジー
- Data Source
  KAKENHI-PROJECT-23360008
[Book] GaNパワーデバイスの技術展開2012
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Total Pages
  264
- Publisher
  サイエンス＆テクノロジー
- Data Source
  KAKENHI-PROJECT-23760008
[Book] GaNパワーデバイスの技術展開,サイエンス&テクノロジー2012
- Author(s)
  纐纈明伯,熊谷義直,村上尚
- Total Pages
  264
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Investigation of high speed β-Ga2O3 growth by solid-source trihalide vapor phase epitaxy2023
- Author(s)
  Kyohei Nitta, Kohei Sasaki, Akito Kuramata, Hisashi Murakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SF Pages: SF1021-SF1021
- DOI
  10.35848/1347-4065/acc747
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K17743
[Journal Article] Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks2023
- Author(s)
  Nishikawa Tomoka、Goto Ken、Murakami Hisashi、Kumagai Yoshinao、Uemukai Masahiro、Tanikawa Tomoyuki、Katayama Ryuji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SF Pages: SF1015-SF1015
- DOI
  10.35848/1347-4065/acc18e
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02640, KAKENHI-PROJECT-23K17743
[Journal Article] Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy2022
- Author(s)
  K. Goto, H. Murakami, A. Kuramata, S. Yamakoshi, M. Higashiwaki, Y. Kumagai
- Journal Title
  
  APPLIED PHYSICS LETTERS
  
  Volume: 120 Issue: 10
- DOI
  10.1063/5.0087609
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19H02614
[Journal Article] Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate2022
- Author(s)
  Sandeep Kumar, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 5 Pages: 054001-054001
- DOI
  10.35848/1882-0786/ac620b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02614
[Journal Article] トリハライド気相成長法によるGaN結晶成長の進展2021
- Author(s)
  村上尚、纐纈明伯
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 48
- NAID
  130008110706
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02614
[Journal Article] Homo- and hetero-epitaxial growth of β-gallium oxide via GaCl3-O2-N2 system2021
- Author(s)
  K. Ema, K. Sasaki, A. Kuramata, H. Murakami
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 564 Pages: 1261291-5
- DOI
  10.1016/j.jcrysgro.2021.126129
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PROJECT-19H02614
[Journal Article] Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach2021
- Author(s)
  Yosho Daichi、Matsuo Yuriko、Kusaba Akira、Kempisty Pawel、Kangawa Yoshihiro、Murakami Hisashi、Koukitu Akinori
- Journal Title
  
  CrystEngComm
  
  Volume: 23 Issue: 6 Pages: 1423-1428
- DOI
  10.1039/d0ce01683g
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K15181, KAKENHI-PLANNED-16H06417, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-19H02614
[Journal Article] Growth of lattice-relaxed InGaN thick films on patterned sapphire substrates by tri-halide vapor phase epitaxy2021
- Author(s)
  Kentaro Ema, Ryohei Hieda, Hisashi Murakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 10 Pages: 105501-105501
- DOI
  10.35848/1347-4065/ac1e46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02614
[Journal Article] Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy2020
- Author(s)
  Yamaguchi Akira、Oozeki Daisuke、Kawamoto Naoya、Takekawa Nao、Bulsara Mayank、Murakami Hisashi、Kumagai Yoshinao、Matsumoto Koh、Koukitu Akinori
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4
- DOI
  10.1002/pssb.201900564
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Journal Article] Temperature dependence of Ga2O3 growth by halide vapor phase epitaxy on sapphire and β-Ga2O3 substrates2020
- Author(s)
  Ken Goto, Hidetoshi Nakahata, Hisashi Murakami, and Yoshinao Kumagai
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 22 Pages: 2221011-5
- DOI
  10.1063/5.0031267
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06417
[Journal Article] Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source2019
- Author(s)
  Kenji Iso, Yuya Gokudan, Masumi Shiraishi, Minae Nishikado, Hisashi Murakami, Akinori Koukitu
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 48 Issue: 1 Pages: 454-459
- DOI
  10.1007/s11664-018-6728-1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy2019
- Author(s)
  Ema Kentaro、Uei Rio、Murakami Hisashi、Koukitu Akinori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1027-SC1027
- DOI
  10.7567/1347-4065/ab112c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02614
[Journal Article] Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy2019
- Author(s)
  Kentaro Ema, Rio Uei, Hisashi Murakami and Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 印刷中
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] Growth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl32019
- Author(s)
  Iso Kenji、Oozeki Daisuke、Ohtaki Syoma、Murakami Hisashi、Koukitu Akinori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1024-SC1024
- DOI
  10.7567/1347-4065/ab1479
- Data Source
  KAKENHI-PROJECT-19H02614
[Journal Article] GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl3: investigation of the growth dependence on NH3 and additional Cl22019
- Author(s)
  Takekawa Nao、Takahashi Machi、Kobayashi Mayuko、Kanosue Ichiro、Uno Hiroyuki、Takemoto Kikurou、Murakami Hisashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1022-SC1022
- DOI
  10.7567/1347-4065/ab09da
- Data Source
  KAKENHI-PROJECT-19H02614
[Journal Article] Dependence of surface morphology at initial growth of CdTe on the II/VI on (211) Si substrates by vapor phase epitaxy using metallic Cd source2019
- Author(s)
  Iso Kenji, Gokudan Yuya, Shiraishi Masumi, Nishikado Minae, Murakami Hisashi, Koukitu Akinori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 506 Pages: 185-189
- DOI
  10.1016/j.jcrysgro.2018.10.038
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl3: the investigation of the growth dependence on NH3 and additional Cl22019
- Author(s)
  Nao Takekawa, Machi Takahashi, Mayuko Kobayashi, Ichiro Kanosue, Hiroyuki Uno, Kikurou Takemoto, and Hisashi Murakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 印刷中
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy2018
- Author(s)
  Nao Takekawa, Naoto Hayashida, Daisuke Ohzeki, Akira Yamaguchi, Hisashi Murakami, Yoshinao Kumagai, Koh Matsumoto, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 502 Pages: 7-13
- DOI
  10.1016/j.jcrysgro.2018.08.024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] Comparison of O2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy2018
- Author(s)
  Keita Konishi, Ken Goto, Rie Togashi, Hisashi Murakami, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Yoshinao Kumagai
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 492 Pages: 39-44
- DOI
  10.1016/j.jcrysgro.2018.04.009
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PROJECT-16K04944
[Journal Article] Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl32017
- Author(s)
  Kenji Iso, Karen Matsuda, Nao Takekawa, Hisashi Murakami ans Akinori Koukitu
- Journal Title
  
  Phisica Status Solidi B
  
  Volume: 254 Issue: 8
- DOI
  10.1002/pssb.201600679
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26246018, KAKENHI-PROJECT-16K04945
[Journal Article] Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source2017
- Author(s)
  Iso Kenji、Gokudan Yuya、Shiraishi Masumi、Murakami Hisashi、Koukitu Akinori
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 46 Issue: 10 Pages: 5884-5888
- DOI
  10.1007/s11664-017-5584-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants2017
- Author(s)
  Iwinska M.、Piotrzkowski R.、Litwin-Staszewska E.、Ivanov V. Yu.、Teisseyre H.、Amilusik M.、Lucznik B.、Fijalkowski M.、Sochacki T.、Takekawa N.、Murakami H.、Bockowski M.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 475 Pages: 121-126
- DOI
  10.1016/j.jcrysgro.2017.06.007
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] Crystal growth of HVPE-GaN doped with germanium2017
- Author(s)
  Iwinska M.、Takekawa N.、Ivanov V.Yu.、Amilusik M.、Kruszewski P.、Piotrzkowski R.、Litwin-Staszewska E.、Lucznik B.、Fijalkowski M.、Sochacki T.、Teisseyre H.、Murakami H.、Bockowski M.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 480 Pages: 102-107
- DOI
  10.1016/j.jcrysgro.2017.10.016
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] Thick nonpolar m -plane and semipolar (10-1 -1) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl32017
- Author(s)
  Kenji Iso, Karen Mstsuda, Nao Takekawa, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami and Akinori Koukit
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 461 Pages: 25-29
- DOI
  10.1016/j.jcrysgro.2017.01.005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26246018, KAKENHI-PROJECT-16K04945
[Journal Article] Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor2016
- Author(s)
  Hisashi Murakami*, Nao Takekawa, Anna Shiono, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Koh Matsumoto, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 456 Pages: 140-144
- DOI
  10.1016/j.jcrysgro.2016.08.029
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H22016
- Author(s)
  R. Togashi, Y. Kisanuki, K. Goto, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu, and Y. Kumagai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1202BE-1202BE
- DOI
  10.7567/jjap.55.1202be
- NAID
  210000147274
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417, KAKENHI-PROJECT-16K04944
[Journal Article] Growth of thick and high crystalline quality InGaN layers on GaN (000-1) substrate using tri-halide vapor phase epitaxy2016
- Author(s)
  Takahide Hirasaki, Martin Eriksson, Quang Tu Thieu, Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Per Olof Holtz, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 456 Pages: 145-150
- DOI
  10.1016/j.jcrysgro.2016.08.019
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018, KAKENHI-PROJECT-16K04945
[Journal Article] Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N22016
- Author(s)
  Kazuya Takada*, Kazushiro Nomura, Rie Togashi, Hisashi Murakami, Akinori Koukitu, and Yoshinao Kumagai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FF01-05FF01
- DOI
  10.7567/jjap.55.05ff01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04945
[Journal Article] Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy2016
- Author(s)
  T. Hirasaki, T. Hasegawa, M. Meguro, Q. T. Thieu, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FA01-05FA01
- DOI
  10.7567/jjap.55.05fa01
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14J05164, KAKENHI-PROJECT-25390064, KAKENHI-PROJECT-26790043, KAKENHI-PROJECT-16K04945
[Journal Article] Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n-Ga2O3 drift layers grown by halide vapor phase epitaxy2016
- Author(s)
  M. Higashiwaki, K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, S. Yamakoshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 108 Issue: 13 Pages: 133503-133506
- DOI
  10.1063/1.4945267
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790043, KAKENHI-PROJECT-26246018
[Journal Article] LETTER Tri-halide vapor-phase epitaxy of GaN using GaCl3 on polar, semipolar, and nonpolar substrates2016
- Author(s)
  Kenji Iso, Nao Takekawa, Karen Matsuda, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami and Akinori Koukitu
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 10 Pages: 105501-105501
- DOI
  10.7567/apex.9.105501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26246018, KAKENHI-PROJECT-16K04945
[Journal Article] Influence of high-temperature processing on the surface properties of bulk AlN substrates2016
- Author(s)
  S. Tojo, R. Yamamoto, R. Tanaka, Q.-T. Thieu, R. Togashi, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, H. Murakami, R. Collazo, A. Koukitu, B. Monemar, Z. Sitar, Y. Kumagai
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 446 Pages: 33-38
- DOI
  10.1016/j.jcrysgro.2016.04.030
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555, KAKENHI-PROJECT-26790043, KAKENHI-PROJECT-16K04945
[Journal Article] High rate InN growth by two-step precursor generation hydride vapor phase epitaxy2015
- Author(s)
  Rie Togashi, Quang Tu Thieu, Hisashi Murakami, Yoshihiro Ishitani, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 422 Pages: 15-19
- DOI
  10.1016/j.jcrysgro.2015.04.019
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390064
[Journal Article] Thermal stability of β-Ga2O3 in mixed flows of H2 and N22015
- Author(s)
  Rie Togashi, Kazushiro Nomura1, Chihiro Eguchi, Takahiro Fukizawa, Ken Goto, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4 Pages: 041102-041102
- DOI
  10.7567/jjap.54.041102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390064, KAKENHI-PROJECT-26790043
[Journal Article] Growth of Thick InGaN Layers by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  Takahide Hirasaki, Masato Ishikawa, Fumiaki Sakuma, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- NAID
  210000143862
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Growth of thick InGaN layers by tri-halide vapor phase epitaxy2014
- Author(s)
  Takahide Hirasaki, Kazuma Asano, Mizuki Banno, Masato Ishikawa, Fumiaki Sakuma, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 5S1 Pages: 1-4
- DOI
  10.7567/jjap.53.05fl02
- NAID
  210000143862
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26246018
[Journal Article] Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy2014
- Author(s)
  .Kazushiro Nomura, Ken Goto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 405 Issue: 1 Pages: 19-22
- DOI
  10.7567/apex.8.015503
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390064, KAKENHI-PROJECT-26790043
[Journal Article] Growth of Thick InGaN Layers by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  Takahide Hirasaki, Masato Ishikawa, Fumiaki Sakuma, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390064
[Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N22013
- Author(s)
  Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JB10-08JB10
- DOI
  10.7567/jjap.52.08jb10
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-24360006, KAKENHI-PROJECT-25390064
[Journal Article] Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates2013
- Author(s)
  Rie Togashi, Sho Yamamoto, K. Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JD05-08JD05
- DOI
  10.7567/jjap.52.08jd05
- NAID
  210000142640
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-25390064
[Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N22013
- Author(s)
  Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi, Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10-13) crystal on GaAs(110) by MOVPE2013
- Author(s)
  H.C.Cho, R.Togashi, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 367 Pages: 122-125
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Thermodynamic analysis of InGaN-HVPE growth using group-III chlorides, bromides, and iodides2013
- Author(s)
  Takahide Hirasaki, Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: Vol.10 Pages: 413-416
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10- 13) crystal on GaAs(110) by MOVPE2013
- Author(s)
  H.C. Cho, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 367 Pages: 122-125
- DOI
  10.1016/j.jcrysgro.2012.12.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008, KAKENHI-PROJECT-24656011, KAKENHI-PROJECT-25390064
[Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10-13) crystal on GaAs(110) by MOVPE2013
- Author(s)
  H.C. Cho, R. Togashi, H. Murakami, Y.Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol. 367 Pages: 122-125
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy2013
- Author(s)
  Hisashi Murakami, Sae Takenaka, Tetsuro Hotta, Yoshinao Kumagai Akinori Koukitu, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: Vol. 10 Pages: 472-475
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Thermodynamic analysis of InGaN-HVPE growth using group-III chlorides, bromides, and iodides2013
- Author(s)
  Takahide Hirasaki
- Journal Title
  
  Physica Status Solide C
  
  Volume: 10 Issue: 3 Pages: 413-416
- DOI
  10.1002/pssc.201200695
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008, KAKENHI-PROJECT-24656011, KAKENHI-PROJECT-25390064
[Journal Article] Thermodynamic analysis of InGaN-HVPE growth using group-III chlorides, bromides, and iodides2013
- Author(s)
  Takahide Hirasaki, Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai,, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 413-416
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase Epitaxy2013
- Author(s)
  Hisashi Murakami, Sae Takenaka, Tetsuro Hotta, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 472-475
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy2013
- Author(s)
  Hisashi Murakami, Sae Takenaka, Tetsuro Hotta, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 472-475
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Influence of growth temperature on the twin formation of the InN{10-13} on GaAs(110) by metalorganic vapor phase epitaxy2012
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 9 Issue: 3-4 Pages: 677-680
- DOI
  10.1002/pssc.201100383
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H_2 and N_22012
- Author(s)
  Y. Kumagai, T. Igi, M. Ishizuki, R. Togashi, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol.350 Issue: 1 Pages: 60-65
- DOI
  10.1016/j.jcrysgro.2011.12.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009, KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport2012
- Author(s)
  Toru Nagashima
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 12 Pages: 1255011-3
- DOI
  10.1143/apex.5.125501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008, KAKENHI-PROJECT-24360006
[Journal Article] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport2012
- Author(s)
  Yoshinao Kumagai, Yuki Kubota, Toru Nagashima, Toru Kinoshita, Rafael Dalmau, Raoul Schlesser, Baxter Moody, Jinqiao Xie, Hisashi Murakami, Akinori Koukitu, Zlatko Sitar
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol. 5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport2012
- Author(s)
  Yoshinao Kumagai
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 5 Pages: 0555041-3
- DOI
  10.1143/apex.5.055504
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008, KAKENHI-PROJECT-24360006
[Journal Article] 窒化物化合物半導体の厚膜結晶成長技術-HVPE成長を中心にして-2012
- Author(s)
  纐纈明伯,熊谷義直,村上尚
- Journal Title
  
  鉱山
  
  Volume: 700巻 Pages: 25-34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates2012
- Author(s)
  Rie Togashi, Toru Nagashima, Manabu Harada, Hisashi Murakami, Yoshinao Kumagai, Hiroyuki Yanagi, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (印刷中) Pages: 197-200
- DOI
  10.1016/j.jcrysgro.2011.10.014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Influence of growth temperature on the twin formation of the InN{10-13} on GaAs(110) by metalorganic vapor phase epitaxy2012
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: Vol.9 Pages: 677-680
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport2012
- Author(s)
  Toru Nagashima, Yuki Kubota, Toru Kinoshita, Yoshinao Kumagai, Jinqiao Xie, Ramon Collazo, Hisashi Murakami, Hiroshi Okamoto, Akinori Koukitu, Zlatko Sitar
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol. 5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] 窒化物化合物半導体の厚膜結晶成長技術-HVPE成長を中心にして-2012
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Journal Title
  
  鉱山
  
  Volume: 700 Pages: 25-34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy2012
- Author(s)
  Hisashi Murakami
- Journal Title
  
  Physica Status Solide C
  
  Volume: 10 Issue: 3 Pages: 472-475
- DOI
  10.1002/pssc.201200685
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008, KAKENHI-PROJECT-24656011, KAKENHI-PROJECT-25390064
[Journal Article] 窒化物化合物半導体の厚膜結晶成長技術―HVPE成長を中心にして―2012
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Journal Title
  
  鉱山
  
  Volume: 700 Pages: 25-34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas2011
- Author(s)
  H.C. Cho, M. Suematsu, H. Murakami, Y.Kumagai, R. Toba, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol. 318 Pages: 479-482
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Growth of semi-polar InN layer on GaAs (110) surface by MOVPE2011
- Author(s)
  Hisashi Murakami, Hyun Chol Cho, Mayu Suematsu, Rie Togashi, Yoshinao Kumagai, Ryuichi Toba, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Issue: 1 Pages: 479-482
- DOI
  10.1016/j.jcrysgro.2010.10.027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Theoretical study on the influence of surface hydrogen coverage on the initial growth process of AlN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Control of in-plane epitaxial relationship of c-plane AlN layers grown on a-plane sapphire substrates by hydride vapor phase epitaxy2011
- Author(s)
  J.Tajima, R.Togashi, H.Murakami, Y.Kumagai, K.Takada, A.Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamic analysis on HVPE growth of InGaN ternary alloy2011
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Pages: 441-445
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Control of in-plane epitaxial relationship of c-plane AlN layers grown on a-plane sapphire substrates by hydride vapor phase epitaxy2011
- Author(s)
  J. Tajima, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, and A. Koukitu
- Journal Title
  
  Physica Status Solidi(c)
  
  Volume: Vol.8No.7-8 Issue: 7-8 Pages: 2028-2030
- DOI
  10.1002/pssc.201000954
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009, KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Thermodynamic analysis on HVPE growth of InGaN ternary alloy2011
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Issue: 1 Pages: 441-445
- DOI
  10.1016/j.jcrysgro.2010.11.079
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Tri-halide vapor phase epitaxy of GaN using GaCl_3 gas as a group III precursor2011
- Author(s)
  T.Yamane, K.Hanaoka, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 5 Pages: 1471-1474
- DOI
  10.1002/pssc.201000902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Carrier Gas Dependence at Initial Processes for a-Plane AlN Growth on r-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2011
- Author(s)
  Jumpei Tajima, Chikashi Echizen, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Jpn., J.Appl.Phys. 50
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of semi-polar InN layer on GaAs (110) surface by MOVPE2011
- Author(s)
  Hisashi Murakami, Hyun Chol Cho, Mayu Suematsu, Rie Togashi, Yoshinao Kumagai, Ryuichi Toba, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Pages: 479-482
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical study on the influence of surface hydrogen coverage on the initial growth process of AlN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 5 Pages: 1577-1580
- DOI
  10.1002/pssc.201000867
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] First-principles study on the effect of surface hydrogen coverage on the adsorption process of ammonia on InN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy2011
- Author(s)
  Rui Masuda, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Kouikitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 12R Pages: 125503-125503
- DOI
  10.1143/jjap.50.125503
- NAID
  40019141129
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas2011
- Author(s)
  H.C.Cho, M.Suematsu, H.Murakami, Y.Kumagai, R.Toba, A.Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas2011
- Author(s)
  H.C.Cho, M.Suematsu, H.Murakami, Y.Kumagai, R.Toba, A.Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 7-8 Pages: 2025-2027
- DOI
  10.1002/pssc.201000951
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Thermodynamic analysis on HVPE growth of InGaN ternary alloy2011
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol. 318 Pages: 441-445
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760008
[Journal Article] Carrier Gas Dependence at Initial Processes for a-Plane AlN Growth on r-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2011
- Author(s)
  J. Tajima, C. Echizen, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, and A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50, No.5 Issue: 5R Pages: 055501-055501
- DOI
  10.1143/jjap.50.055501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009, KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Tri-halide vapor phase epitaxy of GaN using GaCl_3 gas as a group III precursor2011
- Author(s)
  T.Yamane, K.Hanaoka, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First-principles study on the effect of surface hydrogen coverage on the adsorption process of ammonia on InN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 7-8 Pages: 2267-2269
- DOI
  10.1002/pssc.201000896
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy2010
- Author(s)
  Yoshinao Kumagai, Hirokazu Adachi, Aya Otake, Yoshihiro Higashikawa, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Temperature dependence of InN growth on(0001)sapphire substrates by atmospheric pressure hydride vapor phase epitaxy2010
- Author(s)
  Yoshinao Kumagai, Hirokazu Adachi, Aya Otake, Yoshihiro Higashikawa, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy2010
- Author(s)
  Yoshinao Kumagai, Hirokazu Adachi, Aya Otake, Yoshihiro Higashikawa, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 7 Pages: 2022-2024
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of substrate polarity of (0001) and (0001)GaN surfaces on hydride vapor-phase epitaxy of InN2010
- Author(s)
  Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 651-655
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Selective Growth of InN on Patterned GaAs(111)B Substrate -Influence of InN Decomposition at the Interface-2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlNlayers grown by HVPE2010
- Author(s)
  Yoshinao Kumagai, Yuuki Enatsu, Masanari Ishizuki, Yuki Kubota, Jumpei Tajima, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 2530-2536
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Selective growth of InN on patterned GaAs(111)B substrate-influence of InN decomposition at the interface2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 7 Pages: 2019-2021
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical investigation of the decomposition mechanism of AlN(0001) surface under a hydrogen atmosphere2010
- Author(s)
  Hikari Suzuki, Uliana Panyukova, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 7 Pages: 2265-2267
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE2010
- Author(s)
  Yoshinao Kumagai, Yuuki Enatsu, Masanari Ishizuki, Yuki Kubota, Jumpei Tajima, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 2530-2536
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of polarity dependent InN{0001}decomposition in N_2 and H_22009
- Author(s)
  R.Togashi, T.Kamoshita, H.Adachi, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Influence of substrate polarity of (0001) and (000-1)GaN surfaces on hydride vapor-phase epitaxy of InN2009
- Author(s)
  Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.312
  
  Pages: 651-655
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450℃2009
- Author(s)
  Jumpei Tajima, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2837-2839
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ gravimetric monitoring of surface reactions between sapphire and NH_32009
- Author(s)
  Kazuhiro Akiyama, Yasuhiro Ishii, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3110-3113
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Influence of substrate polarity of(0001)and(000-1)GaN surfaces on hydride vapor-phase epitaxy of InN2009
- Author(s)
  Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 651-655
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Ab initio calculation for an initial growth process of GaN on(0001)and(000-1)surfaces by vapor phase epitaxy2009
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical investigation on the decomposition process of GaN(0001)surface under a hydrogen atmosphere2009
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3103-3105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Ab initio calculation for an initial growth process of GaN on(0001)and(000-1)surfaces by vapor phase epitaxy2009
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001)Si Face2009
- Author(s)
  Kazuhiro Akiyama, Yasuhiro Ishii, Sohei Abe, Hisashi Murakami, Yoshinao Kumagai, Hironori Okumura, Tsunenobu Kimoto, Jun Suda, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  40016743032
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of substrate polarity of(0001)and(000-1)GaN surfaces on hydride vap or-phase epitaxy of InN2009
- Author(s)
  Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 651-6550
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical investigation on the decomposition process of GaN(0001)surface under a hydrogen atmosphere2009
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3103-3105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of polarity dependent InN{0001}decomposition in N_2 and H_2 ambient2009
- Author(s)
  R.Togashi, T.Kamoshita, H.Adachi, H. Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ gravimetric monitoring of surface reactions between sapphire and NH_32009
- Author(s)
  Kazuhiro Akiyama, Yasuhiro Ishii, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3110-3113
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Controlled formation of voids at the AlN/sapphire interface by sapphire decomposition for self-separation of the AlN layer2009
- Author(s)
  J.Tajima, Y.Kubota, M.Ishizuki, T.Nagashima, R.Togashi, H.Murakami, Y.Kumagai, K.Takada, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of polarity dependent InN{0001} decomposition in N2 and H22009
- Author(s)
  R. Togashi, T. Kamoshita, H. Adachi, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi C Vol.6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure2008
- Author(s)
  H. Murakami, H.-C. Cho, Y. Kumagai, A Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4954-4958
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure2008
- Author(s)
  H. Murakami, H.-C. Cho, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4954-4958
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Growth of thin protective AIN layers on sapphire substrates at 1065℃ for hydride vapor phase epitaxy of AIN above 1300 ℃2008
- Author(s)
  J. Tajima, Y. Kubota, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 1515-1517
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy2008
- Author(s)
  H. Murakami, K. Eriguchi, J. Torii, H. -C. Cho, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.310
  
  Pages: 1602-1606
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-Temperature Growth of Nonpolar AlN2008
- Author(s)
  K. Akiyama, H. Murakami, Y. Kumagai, and A. Koukitu
- Journal Title
  
  Jpn. J. Appl. Phys 47
  
  Pages: 3434-3437
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire2008
- Author(s)
  Yoshinao Kumagai, Jumpei Tajima, Masanari Ishizuki, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Appl.Phys.Express 1
- NAID
  210000013992
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-Temperature Growth of Nonpolar AIN2008
- Author(s)
  K. Akiyama, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3434-3437
- NAID
  40016057214
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Ab initio calculation for the decomposition process of_GaN (0001) and (000-1) surfaces2008
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1632-1636
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111) A grown by metalorganic vapor phase epitaxy2008
- Author(s)
  H. Murakami, J. Torii, H.-C. Cho, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1602-1606
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First principles study of the decomposition processes of AIN in ahydrogen atmosphere2008
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 3042-3044
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] High-temperature growth of thick AIN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy2008
- Author(s)
  K. Eriguchi, T. Hiratsuka, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4016-4019
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Experimental and ab-initio studies of temperature dependent InN decomposition in various ambient2008
- Author(s)
  R. Togashi, T. Kamoshita, Y. Nishizawa, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 1518-1521
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure2008
- Author(s)
  H. Murakami, H. -C. Cho, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.310
  
  Pages: 4954-4958
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] Self-Separation of a Thick AIN Layer from a Sapphire Substratevia Interfacial Voids Formed by the Decomposition of Sapphire2008
- Author(s)
  Y. Kumagai, J. Tajima, M. Ishizuki, T. Nagashima, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Applied Physics Express 1
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Characterization of a freestanding AIN substrate prepared by hydride vapor phase epitaxy2008
- Author(s)
  Y. Kumagai, T. Nagashima, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 1512-1514
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of hydrogen input partial pressure on the polarity of InN on GaAs(111)A grown by metalorganic vapor2008
- Author(s)
  H. Murakami, K. Eriguchi, J. Torii, H.-C. Cho, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1602-1606
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760010
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-temperature Growth of Nonpolar AIN2008
- Author(s)
  K. Akiyama, H. Murakami, Y. Kumagai, and A. Koukitu
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 3434-3437
- NAID
  40016057214
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of surface atom arrangement on the growth of InN layers on GaAs (111)A and (111)B surfaces by metalorganic vapor phase epitaxy2007
- Author(s)
  H.Murakami, J.Torii, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 387-389
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] A new system for growing thick InN layers by hydride vapor phase epitaxy2007
- Author(s)
  J. Kikuchi, Y. Nishizawa, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Pysica State Solide 4
  
  Pages: 2419-2422
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical Analysis for Surface Reconstruction of AIN and InN in the Presence of Hydrogen2007
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 5112-5115
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] HVPE growth of AlxGa1-xN ternary alloy using AlCl3 and GaCl2007
- Author(s)
  Akinori Koukitu, Fumitaka Satoh, Takayoshi Yamane, Hisashi Murakami, Yoshinao Kumagai
- Journal Title
  
  J.Cryst.Growth 305
  
  Pages: 335-339
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl_3 using In metal and Cl_22007
- Author(s)
  Y.Kumagai, J.Kikuchi, Y.Nishizawa, H.Murakami, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.300
  
  Pages: 57-61
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First-Principles Calculation and X-ray Absorption Fine Structure Analys is of Fc Doping Mcchanism for Scomi-Inaulating CaN Crowth on GaAs Substrates2007
- Author(s)
  R. Togashi, F. Sato, H. Murakami, J. Iihara, K. Yamaguchi, Y. Kumagai, A. Koukitu
- Journal Title
  
  Pysica State Solide 244
  
  Pages: 1862-1866
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Al- and N-polar AIN laters layers on c-plane sapphire substrates by modified flow-modulation MOCVD2007
- Author(s)
  M. Takeuchi, H. Shimizu, R.Kajitami, K. Kawasaki, T.Kinoshita, K. Takada, H. Murakami, Y.Kumagai, Y. Kumagai, A. Koukitu, T. Koyama, S.F.Chichibue, Y. Aoyagi
- Journal Title
  
  Jpn. J. Appl. Phys. 305
  
  Pages: 360-365
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ GraVimetric Monitoring of Decomposition Rate on the Surface of (0001) c-plane Sapphire for the High Temperature Growth of AIN2007
- Author(s)
  K. Akiyama, T. Araki, H. Murakami, Y. kumagai, and A. koukitu
- Journal Title
  
  Pysica State Solide 4
  
  Pages: 2297-2300
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl22007
- Author(s)
  Y. Kumagai, J. Kikuchi, Y. Nishizawa, H; Murakami, and A Koukitu
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 57-61
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Ab initio calculation for the decomposition proces of GaN (0001) and (000-1) surfaces2007
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai and A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1632-1636
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] HVPE growth of AlxGal-xN tcrnory alloy using ALCl3 and GaCl2007
- Author(s)
  Akinori Koukitu, Takayoshi Yamane, Fumitaka Satoh, Hisashi Murakami, Yoshinao Kumagai
- Journal Title
  
  Journal of Crystal Growth 305
  
  Pages: 335-339
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] MOVPE-like HVPE of AIN using solid aluminum trichloride source2007
- Author(s)
  K.Eriguchi, H.Murakami, U.Panyukova, Y.Kumagai, S.Ohira, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 332-335
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl22007
- Author(s)
  Yoshinao Kumagai, Jun Kikuchi, Yuuki Nishizawa, Hisashi Murakami, Akinori Koukitu
- Journal Title
  
  J.Cryst.Growth 300
  
  Pages: 57-61
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity dependence of AIN {0001} decomposition in flowing H22007
- Author(s)
  Y. Kumagai, K. Akiyama, R. Togashi, H. Murakami, M. Takeuchi, T. Kinoshita, K. Takada, Y. Aoyagi, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 305
  
  Pages: 366-371
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of thick Al_xGa_<1-x>N ternary alloy by hydride vapor phase epitaxy2007
- Author(s)
  T.Yamane, F.Satoh, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.300
  
  Pages: 164-167
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of thick AlxGal-xN ternary alloy by hydride vapor phase epitaxy2007
- Author(s)
  T. Yamane, F. Satoh, H. Murakami, Y. Kumagai and A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 164-167
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl_3 and NH_32006
- Author(s)
  Y.Kumagai, K.Takemoto, J.Kikuchi, T.Hasegawa, H.Murakami, A.Koukitu
- Journal Title
  
  physica status solidi (b) Vol.243
  
  Pages: 1431-1435
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates2006
- Author(s)
  Y.Kumagai, F.Satoh, R.Togashi, H.Murakami, K.Takemoto, J.Iihara, K.Yamaguchi, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.296
  
  Pages: 11-14
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamic analysis of various types of hydride vapor phase epitaxy systems for high-speed growth of InN2006
- Author(s)
  J.Kikuchi, Y.Nishizawa, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics Vol.45
- NAID
  10018632545
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamic study on the role of hydrogen during hydride vapor phase epitaxy of Al_x Ga_<1-x>N2006
- Author(s)
  H.Murakami, J.Kikuchi, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) Vol.3
  
  Pages: 1457-1460
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] A new system for growing thick InN layers by hydride vapor phase epitaxy
- Author(s)
  J.Kikuchi, Y.Nishizawa, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on the Surface of (0001) c-plane Sapphire for the High Temperature Growth of AIN
- Author(s)
  K.Akiyama, T.Araki, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvement of crystalline quality for Al- and N-polar AlN layers by modified flow-modulation MOCVD growth
- Author(s)
  M.Takeuchi, H.Shimizu, R.Kajitani, K Kawasaki, T.Kinoshita, K.Takada, H.Murakami, Y.Kumagai, A.Koukitu, Y.Aoyagi
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First-Principles Calculation and X-ray Absorption Fine Structure Analysis of Fe Doping Mechanism for Semi-Insulating GaN Growth on GaAs Substrates
- Author(s)
  R.Togashi, F.Sato, H.Murakami, J.Iihara, K.Yamaguchi, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity dependence of AlN {0001} decomposition in flowing H_2
- Author(s)
  Y.Kumagai, K.Akiyama, R.Togashi, H.Murakami, M.Takeuchi, T.Kinoshita, K.Takada, Y.Aoyagi, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] HVPE growth of Al_xGa_<1-x>N ternary alloy using AlCl_3 and GaCl
- Author(s)
  A.Koukitu, T.Yamane, F.Satoh, H.Murakami, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Patent] β-Ga2O3系単結晶膜の成長方法、及び結晶積層構造体2013
- Inventor(s)
  纐纈明伯、熊谷義直、村上　尚、後藤　健、佐々木公平
- Industrial Property Rights Holder
  纐纈明伯、熊谷義直、村上　尚、後藤　健、佐々木公平
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-203198
- Filing Date
  2013-09-30
- Data Source
  KAKENHI-PROJECT-25390064
[Patent] 窒化物半導体結晶、製造方法および製造装置2013
- Inventor(s)
  纐纈明伯、熊谷義直、村上　尚
- Industrial Property Rights Holder
  纐纈明伯、熊谷義直、村上　尚
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-188805
- Filing Date
  2013-09-11
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Fairly high temperature growth of GaN thick layers by Cl2-based HVPE2023
- Author(s)
  Hisashi Murakami, Xingxing Pan, Kota Nemoto, Eiji Hase, Kentaro Nagamatsu
- Organizer
  The 14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K17743
[Presentation] Growth of AlN layers on 4H-SiC (000-1) by Hydride Vapor Phase Epitaxy2023
- Author(s)
  Y. Suzuki, A. Sato, and H. Murakami
- Organizer
  43rd Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-23K17743
[Presentation] High temperature and high speed growth of GaN using HVPE-THVPE hybrid method2023
- Author(s)
  Hisashi Murakami, Kota Nemoto, Xingxing Pan, Eiji Hase, Kentaro Nagamatsu
- Organizer
  The 14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K17743
[Presentation] Dependence of Al incorporation on group-III supply ratio in (AlxGa1-x)2O3 growth by halide vapor phase epitaxy2023
- Author(s)
  S. Sato, R. Serizawa, and H. Murakami
- Organizer
  43rd Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-23K17743
[Presentation] HVPE・THVPEハイブリッド成長を用いたGaN高速成長の検討2023
- Author(s)
  根本幸太、Xingxing Pan、村上尚
- Organizer
  第15回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-23K17743
[Presentation] Fabrication of InGaN/GaN periodic heterostructure via THVPE method2023
- Author(s)
  Chiho Yamada, Iori Kobayashi, Hisashi Murakami
- Organizer
  The 14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K17743
[Presentation] 高温HVPE法によるGaN成長における転位伝播に関する調査2023
- Author(s)
  Xingxing Pan、根本幸太、村上尚
- Organizer
  第15回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-23K17743
[Presentation] Cl2-based HVPE GaN growth over 1300 degrees2023
- Author(s)
  K. Nemoto, X. Pan, E. Hase, K. Nagamatsu, and H. Murakami
- Organizer
  43rd Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-23K17743
[Presentation] RF-MBE成長赤色発光MQWにおけるGaInN下地層挿入の効果2022
- Author(s)
  山口智広、山田純平、富樫理恵、田原開悟、赤川広海、佐々木拓生、村上尚、尾沼猛儀、本田徹、名西やすし、岸野克巳
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Influence of intermediate layer on the growth of InGaN on ScAlMgO4 through tri-halide vapor phase epitaxy2022
- Author(s)
  Iori Kobayashi, Ryohei Hieda, Hiroto Murata, Hisashi Murakami
- Organizer
  9th International Conference on Light Emitting Devices and their Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] β-Ga2O3 homoepitaxial growth using GaCl3-O2-N2 system2022
- Author(s)
  R. Nagano, K. Ema, K. Sasaki, A. Kuramata, H. Murakami
- Organizer
  9th International Conference on Light Emitting Devices and their Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] THVPE法におけるInGaN薄膜成長の膜厚制御性とヘテロ構造の検討2022
- Author(s)
  小林伊織、江間研太郎、山田千帆、山口智広、村上尚
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Modification of thermodynamic analysis model for HVPE growth of GaN at high temperatures2022
- Author(s)
  M. Bando, S. Matsuoka, K. Ohnishi, K. Goto, S. Nitta, H. Murakami, Y. Kumagai
- Organizer
  9th International Conference on Light Emitting Devices and their Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] GaN高温HVPE成長のための熱力学解析モデルの修正2022
- Author(s)
  松岡聖、坂東もも子、大西一生、後藤健、新田州吾、村上尚、熊谷義直
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] THVPE法によるSCAMO基板上InGaN成長2021
- Author(s)
  小林伊織、江間研太郎、日永田亮平、村上尚、纐纈明伯
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] 酸化物半導体結晶Ga2O3およびIn2O3の準安定相発現機構の検討2021
- Author(s)
  熊谷義直，後藤健，富樫理恵，山口智広，村上尚
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] GaCl3気体原料を用いたβ-Ga2O3ホモエピタキシャル成長2021
- Author(s)
  長野理紗、江間研太郎、佐々木公平、倉又朗人、村上尚
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] 固体ソースTHVPE法を用いたβ-Ga2O3高速エピタキシャル成長2021
- Author(s)
  山口八輝、佐々木公平，倉又朗人、村上尚
- Organizer
  第13回ナノ構造エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] トリハライド気相成長法によるGaN結晶成長2021
- Author(s)
  村上尚、纐纈明伯
- Organizer
  第50回日本結晶成長学会バルク成長分科会シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] THVPE法におけるGaNホモエピタキシャル成長界面の制御2021
- Author(s)
  丸谷敦哉、畑田諒、根本幸太、村上尚、纐纈明伯
- Organizer
  第13回ナノ構造エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Growth of stable and/or metastable phases of Ga2O3 and In2O3 by halide vapor phase epitaxy and mist chemical vapor deposition2021
- Author(s)
  Yoshinao Kumagai, Ken Goto, Rie Togashi, Tomohiro Yamaguchi, Hisashi Murakami
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] GaCl3気体原料を用いたβ-Ga2O3ホモエピタキシャル成長2021
- Author(s)
  長野理紗、江間研太郎、佐々木公平、倉又朗人、村上尚
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] InGaN growth on ScAlMgO4 substrate via tri-halide vapor phase epitaxy2021
- Author(s)
  I. Kobayashi, K. Ema, R. Hieda, H. Murakami and A. Koukitu
- Organizer
  第40回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Growth of β-Ga2O3 layers by solid-source tri-halide vapor phase epitaxy2021
- Author(s)
  K. Yamaguchi, K. Sasaki, A. Kuramata, H. Murakami
- Organizer
  第40回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Recent progress of thick GaN and its related alloys via HVPE and THVPE2020
- Author(s)
  Hisashi Murakami, Naoya Kawamoto, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  SPIE Photonics West 2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Tri-Halide Vapor Phase Epitaxy2020
- Author(s)
  Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  GaN Consortium Webinar on Crystal Growth and Analysis
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] THVPE法によるSCAMO基板上InGaN成長2020
- Author(s)
  小林伊織、江間研太郎、日永田亮平、村上尚、纐纈明伯
- Organizer
  第3回結晶工学×ISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] トリハライド気相成長法を用いたβ-Ga2O3成長2020
- Author(s)
  江間研太郎，小川直紀，佐々木公平，倉又朗人，村上尚
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] GaCl3-O2-N2系を用いたβ-酸化ガリウム成長2020
- Author(s)
  江間研太郎，小川直紀，佐々木公平，倉又朗人，村上尚
- Organizer
  日本結晶成長学会ナノエピ分科会「第12回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 金属Cdを用いた気相成長法によるGaAs基板上CdTe成長の基板面方位依存性2020
- Author(s)
  林洋美，立華岬，村上尚，纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会「第12回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Halide Vapor Phase Epitaxy of Group-III Sesquioxides2020
- Author(s)
  Yoshinao Kumagai, Ken Goto, Rie Togashi, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki
- Organizer
  2020 Virtual MRS Spring Meeting & Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] THVPE法を用いたInGaN厚膜成長における緩和状態の制御2020
- Author(s)
  日永田亮平、江間研太郎、村上尚、纐纈明伯
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] GaCl3を原料に用いたβ-Ga2O3成長におけるⅥ/Ⅲ比依存性2020
- Author(s)
  長野理紗、江間研太郎、佐々木公平、倉又朗人、村上尚
- Organizer
  第3回結晶工学×ISYSE合同研究会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] トリハライド気相成長法を用いたβ-酸化ガリウム成長2020
- Author(s)
  江間研太郎、小川直紀、佐々木公平、倉又朗人、村上尚
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] PSS上GaN中間層によるInGaN厚膜の格子緩和状態の制御2020
- Author(s)
  日永田亮平、江間研太郎、村上尚、纐纈明伯
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] GaCl3-O2-N2系を用いたβ-酸化ガリウム成長2020
- Author(s)
  江間研太郎，小川直紀，佐々木公平，倉又朗人，村上尚
- Organizer
  日本結晶成長学会ナノエピ分科会「第12回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] GaCl3を原料に用いたβ-Ga2O3成長におけるⅥ/Ⅲ比依存性2020
- Author(s)
  長野理紗、江間研太郎、佐々木公平、倉又朗人、村上尚
- Organizer
  第3回結晶工学×ISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] トリハライド気相成長法による格子緩和したInGaN厚膜成長2019
- Author(s)
  江間研太郎, 植井里緒, 川邉充希, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy for the preparation of epitaxial wafers for vertical power device application2019
- Author(s)
  Yoshinao Kumagai, Ken Goto, Keita Konishi, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, and Masataka Higashiwaki
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Investigation of Thermal and Chemical Stabilities of (001), (010), and (-201) β-Ga2O3 substrates in a flow of either N2 or H22019
- Author(s)
  R. Togashi, S. Yamanobe, K. Goto, H. Murakami, S. Yamakoshi, and Y. Kumagai
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] GaCl-O2-N2系およびGaCl3-O2-N2系によるε-Ga2O3気相成長の比較2019
- Author(s)
  佐藤万由子，竹川直，村上尚，熊谷義直
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Vertical Ga2O3 Schottky Barrier Diodes with Guard Ring Formed by Nitrogen-Ion Implantation2019
- Author(s)
  Chia-Hung Lin, Yohei Yuda, Man Hoi Wong, Mayuko Sato, Nao Takekawa, Keita Konishi, Tatsuro Watahiki, Mikio Yamamuka, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] THVPE法で成長したε-Ga2O3膜の分光エリプソメトリーによる物性評価2019
- Author(s)
  森山匠、和才容子、竹川直、村上尚
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Investigation of Thermal and Chemical Stabilities of (001), (010), and (-201) β-Ga2O3 substrates in a flow of either N2 or H22019
- Author(s)
  R. Togashi, S. Yamanobe, K. Goto, H. Murakami, S. Yamakoshi, and Y. Kumagai
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Enhancement-Mode Current Aperture Vertical Ga2O3 MOSFETs2019
- Author(s)
  Man Hoi Wong, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki
- Organizer
  77th Device Research Conference (77th DRC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Growth of lattice-relaxed InGaN thick films by tri-halide vapor phase epitaxy2019
- Author(s)
  K. Ema, R. Uei, M. Kawabe, H. Murakami, Y. Kumagai and A. Koukitu
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications '19 (LEDIA '19)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Influence of growth temperature and input VI/III ratio on crystallinity in homoepitaxy of β-Ga2O3 by halide vapor phase epitaxy2019
- Author(s)
  K. Goto, R. Miura, T. Kamo, N. Takekawa, H. Murakami, and Y. Kumagai
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Impact of electron-beam irradiation on the performance of β-Ga2O3 Schottky barrier diodes2019
- Author(s)
  C.-H. Lin, A. Takeyama, M. Sato, N. Takekawa, K. Konishi, Y. Yuda, T. Watahiki, M. Yamamuka, H. Murakami, Y. Kumagai, T. Ohshima, and M. Higashiwaki
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] トリハライド気相成長法によるa面sapphire基板上へのε-Ga2O3成長2019
- Author(s)
  江間研太郎，竹川直，後藤健，村上尚，熊谷義直
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Growth of High Crystalline Quality GaN with High Growth Rate by THVPE2019
- Author(s)
  Akira Yamaguchi, Daisuke Oozeki, Naoya Kawamoto, Nao Takekawa, Mayank Bulsara, Hisashi Murakami, Yoshinao Kumagai, Koh Matsumoto and Akinori Koukitu
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] トリハライド気相成長法によるε-Ga2O3成長のsapphire基板面方位依存性2019
- Author(s)
  江間研太郎，竹川直，後藤健，村上尚，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Vertical Ga2O3 Transistors Fabricated By Ion Implantation Doping2019
- Author(s)
  M. Higashiwaki, M. H. Wong, K. Goto, H. Murakami, and Y. Kumagai
- Organizer
  235th ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Growth of Lattice-Relaxed InGaN Thick Films on Patterned Sapphire Substrates by Tri-Halide Vapor Phase Epitaxy2019
- Author(s)
  Kentaro Ema, Rio Uei, Mitsuki Kawabe, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] β-Ga2O3 ショットキーバリアダイオードの電子線照射に対する耐性2019
- Author(s)
  林家弘、武山昭憲、湯田洋平、綿引達郎、村上尚、熊谷義直、大島武、東脇正高
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Growth of Gallium Oxide by HVPE2019
- Author(s)
  Y. Kumagai, K. Konishi, K. Goto, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, and M. Higashiwaki
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] 酸化ガリウムトランジスタ開発の進展2019
- Author(s)
  東脇正高, Man Hoi Wong, 後藤健, 村上尚, 熊谷義直
- Organizer
  2019年日本結晶成長学会特別講演会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] トリハライド気相成長法によるa面sapphire基板上へのε-Ga2O3成長2019
- Author(s)
  江間研太郎、竹川直、後藤健、村上尚、熊谷義直
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] HVPE法を用いたβ-Ga2O3成長における成長温度と供給VI/III比の影響2019
- Author(s)
  後藤健、三浦遼、加茂崇、竹川直、村上尚、熊谷義直
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] THVPE法を用いたc面サファイア基板上酸化ガリウム成長における準安定相の相制御2019
- Author(s)
  竹川直，佐藤万由子，村上尚，熊谷義直
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] β-Ga2O3 MOSFETs with Nitrogen-Ion-Implanted Back-Barrier: DC Performance and Trapping Effects2019
- Author(s)
  Man Hoi Wong, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] 水素・窒素気流中におけるβ-Ga2O3(001)，(010)，(-201)基板の熱的・化学的安定性の検討2019
- Author(s)
  山野邉咲子, 後藤健, 村上尚, 山腰茂伸, 熊谷義直
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] ベータ酸化ガリウムHVPE成長における成長温度および供給VI/III比の影響2019
- Author(s)
  後藤健, 三浦遼, 加茂崇, 竹川直, 村上尚, 熊谷義直
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Impact of the Growth Temperature on GaN Crystal Characteristics by Trihalide Vapor Phase Epitaxy2019
- Author(s)
  Erina Miyata, Syoma Ohtaki, Kenji Iso, Hisashi Murakami, and Akinori Koukitu
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Phonons, free charge carriers, excitons and band-to-band transitions in beta Ga2O3 and related alloys determined by ellipsometry and optical Hall effect2019
- Author(s)
  M. Schubert, A. Mock, S. Knight, M. Hilfiker, M. Stokey, V. Darakchieva, A. Papamichail, R. Korlacki, M.J. Tadjer, Z. Galazka, G. Wagner, N. Blumenschein, A. Kuramata, K. Goto, H. Murakami, Y. Kumagai, M. Higashiwaki, A. Mauze, Y. Zhang, and J. S. Speck
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] p型酸化ガリウムの形成とそのデバイス応用2019
- Author(s)
  東脇正高, ワンマンホイ, 林家弘, 湯田洋平, 綿引達郎, 山向幹雄, 後藤健, 村上尚, 熊谷義直
- Organizer
  独立行政法人日本学術振興会先端ナノデバイス・材料テクノロジー第151委員会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] Comparison between lateral and vertical Ga2O3 isolation structures2019
- Author(s)
  C. De Santi, A. Nardo, M. H. Wong, K. Goto, A. Kuramata, S. Yamakoshi, H. Murakami, Y. Kumagai, M. Higashiwaki, G. Meneghesso, E. Zanoni, M. Meneghini
- Organizer
  2019 International Workshop on Gallium Oxide and Other Related Materials (IWGO 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] β-Ga2O3(001), (010), (-201)基板の熱的・化学的安定性の面方位依存性2019
- Author(s)
  富樫理恵，山野邉咲子，後藤健，村上尚，山腰茂伸，熊谷義直
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] イオン注入ドーピングを用いたβ-Ga2O3縦型パワーデバイス開発2019
- Author(s)
  東脇正高, Man Hoi Wong, 林家弘, 湯田洋平, 綿引達郎, 山向幹雄, 後藤健, 村上尚, 熊谷義直
- Organizer
  独立行政法人日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第113回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02614
[Presentation] 水素・窒素気流中におけるβ-Ga2O3(001)，(010)，(-201)基板の熱的・化学的安定性の検討2019
- Author(s)
  富樫理恵，山野邉咲子，後藤健，村上尚，山腰茂伸，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] MOVPE-like Tri-Halide Vapor Phase Epitaxy of Thick GaN and AlGaN using GaCl3 and AlCl32018
- Author(s)
  Mayuko Kobayashi, Nao Takekawa, Machi Takahashi, and Hisashi Murakami
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] MOVPE-like Tri-Halide Vapor Phase Epitaxy of Thick GaN and AlGaN using GaCl3 and AlCl32018
- Author(s)
  Mayuko Kobayashi, Nao Takekawa, Machi Takahashi, Hisashi Murakami
- Organizer
  19th International Conference on MetalOrganic Vapor Phase Spitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Progress in halide vapor phase epitaxy of Ga2O32018
- Author(s)
  H. Murakami, K. Konishi, K. Goto, Q.-T. Thieu, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, Y. Kumagai
- Organizer
  European Materials Research Society 2018 Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Excess Chlorine and Growth Temperature Effects of N-Polar GaN Growth via Tri-halide Vapor Phase Epitaxy and its Theoretical Study2018
- Author(s)
  N. Takekawa, D. Oozeki, A. Yamaguchi, H. Murakami, Y. Kumagai, K. Matumoto, A. Koukitu
- Organizer
  7th International Symposium on Growth of III-Nitrides (ISGN-7)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] THVPE法によるアモノサーマル製バルクシード上のGaNホモエピタキシャル成長2018
- Author(s)
  大瀧将磨, 磯憲司, 村上尚, 纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Recent progress in tri-halide vapor phase epitaxy of GaN-related materials2018
- Author(s)
  Hisashi Murakami, Nao Takekawa, Kentaro Ema, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] トリハライド気相成長法によるGaN高温高速厚膜成長2018
- Author(s)
  村上尚，竹川直，熊谷義直，纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] THVPE法を用いたGaNの高温・高速成長2018
- Author(s)
  大関大輔，竹川直，山口晃，村上尚，熊谷義直，松本功，纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Heteroepitaxial growth of ε-Ga2O3 thin films on c-plane sapphire and GaN templates by HVPE2018
- Author(s)
  Mayuko Sato, Nao Takekawa, Keita Konishi, Hisashi Murakami and Yoshinao Kumagai
- Organizer
  International Conference on Light Emitting Devices and their Applications 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] THVPE法を用いたN極性GaNの高温成長2018
- Author(s)
  大関大輔、竹川直、河本直哉、山口晃、村上尚、熊谷義直、松本功、纐纈明伯
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] The effect of NH3 partial pressure on GaN growth via Tri-halide vapor phase epitaxy using solid source GaCl32018
- Author(s)
  Nao Takekawa, Mayuko Kobayashi, Machi Takahashi, and Hisashi Murakami
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] HVPE法によるc面サファイア基板上ε-酸化ガリウム成長における酸素分圧及び成長温度の影響2018
- Author(s)
  竹川直，佐藤万由子，村上尚，熊谷義直
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] GaN growth on the three-dimensional-shaped SCAAT bulk seed by tri-halide vapor phase epitaxy using GaCl32018
- Author(s)
  Kenji Iso, Daisuke Oozeki, Syoma Ohtaki, Hisashi Murakami, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] トリハライド気相成長法による格子緩和したInGaN厚膜成長2018
- Author(s)
  植井里緒、川邊充希、江間研太郎、村上尚、熊谷義直、纐纈明伯
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] THVPE法による窒化ガリウムの高速ホモエピタキシャル成長2018
- Author(s)
  河本直哉，竹川直，大関大輔，大瀧将磨，山口晃，村上尚，熊谷義直，松本功，纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] High temperature growth of N-polar GaN by THVPE2018
- Author(s)
  Daisuke Oozeki, Nao Takekawa, Naoya Kawamoto, Akira Yamaguchi, Hisashi Murakami, Yoshinao Kumagai, Kou Matsumoto, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Influence of intermediate layers on thick InGaN growth using THVPE2018
- Author(s)
  Kentaro Ema, Rio Uei, Hisashi Murakami, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Heteroepitaxial growth of ε-Ga2O3 thin films on c-plane sapphire and GaN templates by HVPE2018
- Author(s)
  Mayuko Sato, Nao Takekawa, Keita Konishi, Hisashi Murakami, and Yoshinao Kumagai
- Organizer
  International Conference on Light-Emitting Devices and Their Industrial Applications ’18 (LEDIA ’18)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] HVPE法によるサファイアおよびGaNテンプレート上ε-Ga2O3膜の成長2018
- Author(s)
  佐藤万由子，竹川直，小西敬太，村上尚，熊谷義直
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Thick InGaN layer with the indium solid composition over 10% using tri-halide vapor phase epitaxy2017
- Author(s)
  H. Murakami, K. Ema, N. Matsumoto, M. Meguro, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] c面sapphire基板上c-In2O3のHVPE成長における成長速度の影響2017
- Author(s)
  長井研太，須賀隆之，中畑秀利，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第6回結晶工学未来塾
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] Temperature dependence of In2O3 growth on (0001) sapphire by HVPE2017
- Author(s)
  Takayuki Suga, Shiyu Numata, Rie Togashi, Hisashi Murakami, Bo Monemar, and Yoshinao Kumagai
- Organizer
  International Conference on Light-Emitting Devices and Their Industrial Applications '17 (LEDIA ’17)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] THVPE of GaN -current topics-2017
- Author(s)
  Akinori Koukitu, Nao Takekawa, Hisashi Murakami, Yoshinao Kumagai, Akira Yamaguchi, Koh Matsumoto
- Organizer
  10th Internationational Workshop on Bulk Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Development of bulk AlN substrates for deep-UV optoelectronic devices by HVPE method2017
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramon Collazo, Akinori Koukitu, Bo Monemar, and Zlatko Sitar
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] 固体三塩化物原料を用いたGaNおよび AlGaNのトリハライド気相成長2017
- Author(s)
  髙橋万智、小林真悠子、村上尚、纐纈明伯
- Organizer
  2017年度結晶工学未来塾
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] トリハライド気相成長法によるInGaN系光デバイス作製に向けた膜厚制御性の検討2017
- Author(s)
  江間研太郎、松本尚也、植井里緒、村上尚、熊谷義直、纐纈明伯
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Influence of ambient oxygen on Si incorporation during hydride vapor phase epitaxy of AlN at high temperature2017
- Author(s)
  Keita Konishi, Reo Yamamoto, Rie Togashi, Toru Nagashima, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramon Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Thick GaN and AlGaN Growth by Solid-Source Tri-Halide Vapor Phase Epitaxy2017
- Author(s)
  Hisashi Murakami, Machi Takahashi, Akinori Koukitu
- Organizer
  36th Electronic Material Symposium (EMS36)
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] ハライド気相成長法による(0001)サファイア基板上準安定相α-Ga2O3成長の検討2017
- Author(s)
  下川道貴，佐和田陽平，小西敬太，村上尚，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] THVPE法を用いたGaNの高温高速成長2017
- Author(s)
  林田直人、竹川直、大関大輔、山口晃、村上尚、熊谷義直、松本功、纐纈明伯
- Organizer
  2017年度結晶工学未来塾
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Temperature-Dependent Growth of Ga2O3 on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy2017
- Author(s)
  M. Shimokawa, Y. Sawada, K. Konishi, H. Murakami, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] トリハライド気相成長法によるGaN高温厚膜成長2017
- Author(s)
  村上　尚，竹川　直，熊谷義直，山口　晃，松本功，纐纈明伯
- Organizer
  第46回結晶成長国内会議(JCCG-46)
- Invited
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Halide Vapor Phase Epitaxy of β-Ga2O3 Homoepitaxial Layers Using O2 and H2O as Oxygen Sources2017
- Author(s)
  K. Konishi, K. Goto, R. Togashi, H. Murakami, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] HVPE法を用いたc面サファイア基板上Ga2O3成長の温度依存性の調査2017
- Author(s)
  下川道貴，佐和田陽平，小西敬太，村上尚，Bo Monemar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第6回結晶工学未来塾
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] ハライド気相成長法によるIn2O3成長の温度依存性2017
- Author(s)
  中畑秀利，須賀隆之，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 高品質窒化アルミニウムのハイドライド気相成長におけるSiドープ量制御2017
- Author(s)
  小西敬太，山本玲緒，富樫理恵，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，村上尚，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] HVPE法を用いたIn2O3成長における成長速度の影響2017
- Author(s)
  須賀隆之，中畑秀利，小西敬太，富樫理恵，村上尚，Plamen P. Paskov，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 金属Cd原料を用いたVPE法によるSi基板上へのCdTe成長と評価2017
- Author(s)
  極檀優也、磯憲司、2、白石万壽実、村上尚、纐纈明伯
- Organizer
  2017年度結晶工学未来塾
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Influence of Growth Rate on Halide Vapor Phase Epitaxy of c-In2O3 on c-Plane Sapphire Substrates2017
- Author(s)
  T. Suga, H. Nakahata, K. Konishi, R. Togashi, H. Murakami, P. P. Paskov, B. Monemar, and Y. Kumagai
- Organizer
  2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] THVPE法を用いた無極性m面(10-10)および半極性面(10-1-1)上GaN厚膜成長2017
- Author(s)
  大関大輔、磯憲司、松田華蓮、竹川直、引田和弘、林田直人、村上尚、纐纈明伯
- Organizer
  2017年度結晶工学未来塾
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] 高品質InGaN厚膜成長を目指した中間層導入の検討2017
- Author(s)
  植井里緒, 江間研太郎, 松本尚也, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] HVPE growth of the group III nitrides2017
- Author(s)
  A. Koukitu, Y. Kumagai, H. Murakami
- Organizer
  36th Electronic Material Symposium (EMS36)
- Invited
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] 高温AlN-HVPEにおける系内酸素がSiドープ量に与える影響2017
- Author(s)
  小西敬太，山本玲緒，富樫理恵，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，村上尚，Ramon Collazo，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Tri-Halide Vapor Phase Epitaxy of Thick InGaN and AlGaN Ternary Alloys2017
- Author(s)
  Hisashi Murakami, Kentaro Ema, Naoya Matsumoto, Machi Takahashi, Rio Uei, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  10th Internationational Workshop on Bulk Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] 金属Cd原料を用いた気相成長法によるCdTe膜成長とその評価2017
- Author(s)
  白石万壽実, 磯憲司, 極檀優也, 村上尚, 纐纈明伯
- Organizer
  日本学術振興会第162委員会100回記念公開シンポジウム
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] High temperature growth of thick InGaN layer with the indium solid composition of 10% using tri-halide vapor phase epitaxy2017
- Author(s)
  Naoya Matsumoto, Misaki Meguro, Kentaro Ema, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  International Conference on Light Emitting Devices and their Applications 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] High temperature growth of GaN by THVPE method2017
- Author(s)
  N. Takekawa, N. Hayashida, D. Ohzeki, A. Yamaguchi, H. Murakami, Y. Kumagai, K. Matsumoto, A. Koukitu
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] 異なる酸素源を用いた酸化ガリウムハライド気相成長の比較2017
- Author(s)
  小西敬太，後藤健，富樫理恵，村上尚，東脇正高，倉又朗人，山腰茂伸，Bo Monemar，熊谷義直
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] 無極性、半極性面バルクGaN基板上へのTHVPE成長2016
- Author(s)
  松田華蓮、磯憲司、竹川直、引田和宏、林田直人、村上尚、纐纈明伯
- Organizer
  応用物理学会第5回結晶工学未来塾
- Place of Presentation
  東京農工大学、東京都
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Growth of GaN and InGaN thick epitaxial layers by tri-halide vapor phase epitaxy2016
- Author(s)
  Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto and Akinori Koukitu
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Kyoto University, Kyoto, Japan
- Year and Date
  2016-07-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Quasi-Equilibrium Crystal Shape and Kinetic Wulff Plot for GaN Grown by Tri-Halide Vapor Phase Epitaxy Using GaCl32016
- Author(s)
  Kenji Iso, Karen Matsuda, Nao Takekawa, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] High-Speed Growth of Thick InGaN Ternary Alloy by Tri-Halide Vapor Phase Epitaxy2016
- Author(s)
  H. Murakami, T. Hirasaki, M. Meguro, Q.-T. Thieu, R. Togashi, Y. Kumagai, B. Monemar, A. Koukitu
- Organizer
  18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center, Aichi，Japan
- Year and Date
  2016-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] トリハライド気相成長法によるInGaN厚膜の高温成長2016
- Author(s)
  江間研太郎、目黒美佐稀、松本尚也、村上尚、熊谷義直、纐纈明伯
- Organizer
  応用物理学会第5回結晶工学未来塾
- Place of Presentation
  東京農工大学、東京都
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] HVPE法AlN単結晶基板表面のSi蓄積の原因調査および制御の検討2016
- Author(s)
  佐藤圭介，寺尾真人，三井太朗，山本玲緒，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，纐纈明伯，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  応用物理学会結晶工学分科会第5回結晶工学未来塾
- Place of Presentation
  東京農工大学小金井キャンパス（東京都小金井市）
- Year and Date
  2016-11-07
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] トリハライド気相成長法による GaN 成長の基板面方位依存性2016
- Author(s)
  松田華蓮、磯憲司、竹川直、引田和宏、林田直人、村上尚、纐纈明伯
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学, 京都府
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Recent Progress in Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN2016
- Author(s)
  Hisashi Murakami, Nao Takekawa, Takahide Hirasaki, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
- Year and Date
  2016-10-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] トリハライド気相成長法を用いた擬平衡結晶面とウルフ図作成2016
- Author(s)
  磯憲司、松田華蓮、竹川直、引田和宏、林田直人、村上尚、纐纈明伯
- Organizer
  応用物理学会第5回結晶工学未来塾
- Place of Presentation
  東京農工大学、東京都
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] トリハライド気相成長法を用いた N 極性窒化ガリウムの高温成長2016
- Author(s)
  竹川直、引田和弘、松田華蓮、林田直人、村上尚、熊谷義直、纐纈明伯
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学, 京都府
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] High Temperature Growth of Thick InGaN Layers using Tri-Halide Vapor Phase Epitaxy2016
- Author(s)
  M. Meguro, T. Hirasaki, T. Hasegawa, Q. T.Thieu, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu
- Organizer
  International Conference on LEDs and their Industrial Applications ’16 (LEDIA'16)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Recent Progress in Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN2016
- Author(s)
  Hisashi Murakami, Nao Takekawa, Takahide Hirasaki, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Progress of homoepitaxial growth technique of thick β-Ga2O3 layers by halide vapor phase epitaxy2016
- Author(s)
  Y. Kumagai, K. Nomura, K. Goto, Q.-T. Thieu, R. Togashi, K. Sasaki, K. Konishi, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu, M. Higashiwaki
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center（愛知県名古屋市熱田区）
- Year and Date
  2016-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06417
[Presentation] High-Speed Growth of Thick InGaN Ternary Alloy by Tri-Halide Vapor Phase Epitaxy2016
- Author(s)
  H. Murakami, T. Hirasaki, M. Meguro, Q.-T. Thieu, R. Togashi, Y. Kumagai, B. Monemar, A. Koukitu
- Organizer
  18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center, Nagoya, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] High temperature growth of thick InGaN ternary alloy by tri-halide vapor phase epitaxy2016
- Author(s)
  N. Matsumoto, M. Meguro, K. Ema, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  35th Electronic Materials Symposium (EMS-35)
- Place of Presentation
  ラフォーレ琵琶湖、滋賀県
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] Dependence of GaN Growth on the Substrates with Various Surface Orientations by Tri-Halide Vapor Phase Epitaxy Using GaCl32016
- Author(s)
  Kenji Iso, Karen Matsuda, Nao Takekawa, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
- Year and Date
  2016-10-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] HVPE法によるn形AlNバルク基板作製の検討2016
- Author(s)
  熊谷義直，富樫理恵，山本玲緒，永島徹，木下亨，村上尚，Monemar Bo，纐纈明伯
- Organizer
  応用物理学会結晶工学分科会第145回研究会
- Place of Presentation
  名古屋大学東山キャンパス（愛知県名古屋市千種区）
- Year and Date
  2016-06-03
- Invited
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] Dependence of GaN Growth on the Substrates with Various Surface Orientations by Tri-Halide Vapor Phase Epitaxy Using GaCl32016
- Author(s)
  Kenji Iso, Karen Matsuda, Nao Takekawa, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] トリハライド気相成長法を用いたN極性窒化ガリウムの高温成長2016
- Author(s)
  引田和宏，竹川直, 松田華蓮, 林田直人, 村上尚，熊谷義直，纐纈明伯
- Organizer
  応用物理学会第5回結晶工学未来塾
- Place of Presentation
  東京農工大学、東京都
- Data Source
  KAKENHI-PROJECT-16K04945
[Presentation] High Temperature Growth of Thick InGaN Layers using Tri-Halide Vapor Phase Epitaxy2016
- Author(s)
  M. Meguro, T. Hirasaki, T. Hasegawa, Q. T.Thieu, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu
- Organizer
  International Conference on LEDs and their Industrial Applications ’16
- Place of Presentation
  パシフィコ横浜、神奈川県
- Year and Date
  2016-05-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Thick (>10 μm) and High Crystalline Quality InGaN Growth on GaN(000-1) Substrate by Tri-Halide Vapor Phase Epitaxy2015
- Author(s)
  Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu
- Organizer
  9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX)
- Place of Presentation
  Hansol Oak Valley, Wonju, Korea
- Year and Date
  2015-11-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Effect of NH3 Input Partial Pressure on InGaN Growth by Tri-Halide Vapor Phase Epitaxy2015
- Author(s)
  Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar and Akinori Koukitu
- Organizer
  34th Electronic Materials Symposium (EMS-34)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県守山市)
- Year and Date
  2015-07-16
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Dependences of input InCl3 ratio and growth temperature in InGaN growth by Tri-Halide Vapor Phase Epitaxy2015
- Author(s)
  Misaki Meguro, Takahide Hirasaki, Tomoyasu Hasegawa, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar and Akinori Koukitu
- Organizer
  34th Electronic Materials Symposium (EMS-34)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県守山市)
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] HVPE法によるSiドープn形AlN基板作製と縦型ショットキーバリアダイオード試作への適用2015
- Author(s)
  寺尾真人，山本玲緒，木下亨，永島徹，小幡俊之，高島信也，富樫理恵，村上尚，Raoul Schlesser，Ramon Collazo，纐纈明伯，Bo Monemar，Zlatko Sitar，熊谷義直
- Organizer
  第45回結晶成長国内会議（NCCG-45）
- Place of Presentation
  北海道大学学術交流会館（北海道札幌市）
- Year and Date
  2015-10-20
- Data Source
  KAKENHI-PROJECT-15H03555
[Presentation] ハライド気相成長法によるβ-Ga2O3基板上ホモエピタキシャル成長2015
- Author(s)
  野村一城，後藤健，佐々木公平，河原克明，ティユクァントゥ，富樫理恵，村上尚，熊谷義直，東脇正高，倉又朗人，山腰茂伸，Bo Monemar，纐纈明伯
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス, 神奈川県
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN Layers2015
- Author(s)
  Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
- Organizer
  9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX)
- Place of Presentation
  Hansol Oak Valley, Wonju, Korea
- Year and Date
  2015-11-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Calculation of thermochemical data for the growth of III-nitrides by vapor phase epitaxy2015
- Author(s)
  N. Takekawa, H. Murakami, Y. Kumagai and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application '15 (LEDIA '15)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] High-purity and highly-transparent AlN bulk crystal growth for UVC LED application by HVPE2015
- Author(s)
  Y. Kumagai, T. Nagashima, T. Kinoshita, R. Togashi, R. Yamamoto, B. Moody, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
- Organizer
  2015 Photonics West
- Place of Presentation
  The Moscone Center, San Francisco, California, U.S.A.
- Year and Date
  2015-02-09
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN Layers2015
- Author(s)
  Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
- Organizer
  9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX)
- Place of Presentation
  Hansol Oak Valley, Wonju, Korea
- Year and Date
  2015-11-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] トリハライド気相成長法によるIn組成5%のInGaN厚膜(>10μm)成長2015
- Author(s)
  目黒美佐稀、平﨑貴英、長谷川　智康、ティユクァントゥ、村上尚、熊谷義直、Bo Monemar、纐纈明伯
- Organizer
  第4回結晶工学未来塾
- Place of Presentation
  東京農工大学(東京都小金井市)
- Year and Date
  2015-10-29
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Influence of NH3 input partial pressure on N-polarity InGaN growth by tri-halide vapor phase epitaxy2015
- Author(s)
  Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu
- Organizer
  6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu, Shizuoka, Japan
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Growth of GaN and InGaN thick epitaxial layers by tri-halide vapor phase epitaxy2015
- Author(s)
  Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Kyoto University, Kyoto, Japan
- Year and Date
  2015-07-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] トリハライド気相成長法を用いたInGaN成長におけるNH3供給分圧の影響2015
- Author(s)
  平崎貴英，長谷川智康，目黒美佐稀，村上尚，熊谷義直，Bo Monemar，纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学片平キャンパス(宮城県仙台市)
- Year and Date
  2015-05-08
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Growth of Thick InGaN and GaN by Tri-Halide Vapor Phase Epitaxy with high rate2015
- Author(s)
  Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Eaton Hotel, Hong Kong
- Year and Date
  2015-12-15
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] HVPE growth of the group III nitrides2015
- Author(s)
  A. Koukitu, Y. Kumagai, H. Murakami
- Organizer
  14th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya University, Aichi, Japan
- Year and Date
  2015-11-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] High-purity and highly-transparent AlN bulk crystal growth for UVC LED application by HVPE2015
- Author(s)
  Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Rie Togashi, Reo Yamamoto, Baxter Moody, Hisashi Murakami, Ramon Collazo, Akinori Koukitu and Zlatko Sitar
- Organizer
  2015 Photonics West
- Place of Presentation
  San Francisco, California, U.S.A.
- Year and Date
  2015-02-09
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] HVPE growth of the group III nitrides2015
- Author(s)
  A. Koukitu, Y. Kumagai, H. Murakami
- Organizer
  14th Akasaki Research Center Symposium
- Place of Presentation
  Akasaki Research Center
- Year and Date
  2015-11-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Thick (10 μm) and High Crystalline Quality InGaN Growth on GaN(000-1) Substrate by Tri-Halide Vapor Phase Epitaxy2015
- Author(s)
  Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu
- Organizer
  9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX)
- Place of Presentation
  Act City Hamamatsu, Shizuoka, Japan
- Year and Date
  2015-11-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] 水素・窒素気流中におけるβ-Ga2O3の熱的安定性の熱力学的検討2015
- Author(s)
  富樫理恵，野村一城，江口千尋，蕗澤孝紘，後藤健，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス, 神奈川県
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] III-Cl・III-Cl3混在ハライド気相成長によるIII族窒化物特異構造の形成2015
- Author(s)
  熊谷義直，富樫理恵，ティユクァントゥ，村上尚，Bo Monemar，纐纈明伯
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス, 神奈川県
- Year and Date
  2015-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Growth of GaN on r-plane sapphire substrate by tri-halide vapor phase epitaxy2015
- Author(s)
  A. Shiono, N. Takekawa, H. Murakami, Y. Kumagai and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application '15 (LEDIA '15)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] III族酸化物単結晶基板の水素・窒素雰囲気下分解の熱力学解析2014
- Author(s)
  江口千尋, 蕗澤孝紘, 野村一城, 後藤健, 富樫理恵, 村上尚, 倉又朗人, 熊谷義直, 纐纈明伯
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Thermal stability of Ga2O3 in mixed gases of H2 and N22014
- Author(s)
  R. Togashi, K. Nomura, C. Eguchi, T. Fukizawa, K. Goto, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi, A. Koukitu
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-15
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 第一原理計算と統計力学を用いたIII族窒化物の成長における熱化学データの算出2014
- Author(s)
  竹川直，村上尚，熊谷義直，纐纈明伯
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] トリハライド気相成長法を用いたr面サファイヤ基板上へのGaN成長2014
- Author(s)
  富樫理恵, 小島千恵，藤田直人，斉藤広伸，村上尚，熊谷義直，纐纈明伯塩野杏奈，竹川直，藤村侑，村上尚，熊谷義直，纐纈明伯
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Estimation of thermochemical data for the growth of group-III nitrides by the combination of first principles and statistical thermodynamic2014
- Author(s)
  Nao Takekawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using non-hydrogenous sources2014
- Author(s)
  Rintaro Asakawa, Yuta Isa, Naoto Kanzaki, Song-Yun Kang, Akihiko Hiroe, Rie Togashi, Hisashi Murakami, Yusaku Kashiwagi, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA ’14)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Year and Date
  2014-04-24
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Temperature Dependence of InN Growth on Nitrided Yttria-Stabilized Zirconia (111) Substrates Using a Novel HVPE System2014
- Author(s)
  Rie Togashi, Chie Kojima, Naoto Fujita, Hironobu Saito, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  5th International Symposium on Growth of III-Nitrides (ISGN-5)
- Place of Presentation
  Atlanta, Georgia, U.S.A.
- Year and Date
  2014-05-20
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] HVPE法によるAlN/sapphireテンプレート上へのSiドープAlN成長の検討2014
- Author(s)
  田中凌平，東城俊介，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  応用物理学会第3回結晶工学未来塾（2014）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Investigation of Ambient Gas after High-Temperature Growth of AlN by Hydride Vapor Phase Epitaxy2014
- Author(s)
  S. Tojo, R. Tanaka, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors(IWN2014)
- Place of Presentation
  WROCLAW, Poland
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Growth of Si-Doped AlN Layers by Hydride Vapor Phase Epitaxy2014
- Author(s)
  R. Tanaka, S. Tojo, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Centennial Hall, Wroclaw, Poland
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] AlN高温HVPE成長における基板昇降温プロセスが表面に与える影響2014
- Author(s)
  東城俊介，田中凌平，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学天白キャンパス（愛知県名古屋市）
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] AlNのHVPE高温ホモエピタキシャル成長における基板昇降温時表面劣化の原因2014
- Author(s)
  東城俊介，田中凌平，額賀俊成，富樫理恵，永島　徹，木下　亨，Baxter Moody，村上　尚, Ramon Collazo，熊谷義直，Zlatko Sitar
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 北海道
- Year and Date
  2014-09-17
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] High-Speed Hydride Vapor Phase Epitaxy of InN on Nitrided Yttria-Stabilized Zirconia (111) substrates2014
- Author(s)
  C. Kojima, R. Togashi, H. Murakami, Y. Kumagai and A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors(IWN2014)
- Place of Presentation
  WROCLAW, Poland
- Year and Date
  2014-08-25
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] AlN/sapphireテンプレート上へのSiドープAlN層のHVPE成長の検討2014
- Author(s)
  田中凌平，東城俊介，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学天白キャンパス（愛知県名古屋市）
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Theoretical calculation of thermochemical data for the growth of group-III nitrides2014
- Author(s)
  N. Takekawa, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-16
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] 前駆体二段階生成HVPE法により作製したInN成長層の特性評価2014
- Author(s)
  富樫理恵, 斉藤広伸，藤田直人，今井亮太，村上尚，熊谷義直，纐纈明伯
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Nitrides by HVPE -current and prospects-2014
- Author(s)
  A. KOUKITU, Y. KUMAGAI and H. MURAKAMI
- Organizer
  International Workshop on Nitride Semiconductors(IWN2014)
- Place of Presentation
  WROCLAW, Poland
- Year and Date
  2014-08-27
- Invited
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] High-Speed Growth of InN over 10 μm/h by a Novel HVPE System2014
- Author(s)
  N. Fujita, R. Imai, H. Saito, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] ハライド気相成長法による酸化ガリウム成長の熱力学解析2014
- Author(s)
  野村一城，後藤　健，富樫理恵，村上　尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 北海道
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Homo-Epitaxial Growth of High-Purity Films of β-Ga2O3 and ZnO by Halide Vapor Phase Epitaxy2014
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Hisashi Murakami and Akinori Koukitu
- Organizer
  2014 MRS Fall Meeting and Exhibit
- Place of Presentation
  Boston, Massachusetts, U.S.A
- Year and Date
  2014-12-01
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Theoretical calculation of thermochemical data for the growth of group-III nitrides2014
- Author(s)
  N. Takekawa, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-16
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Homoepitaxial Growth of ZnO Thin Layers by Halide Vapor Phase Epitaxy using Hydrogen- Free Sources2014
- Author(s)
  Rintaro Asakawa, Naoto Kanzaki, Song-Yun Kan, Akihiko Hiroe, Rie Togashi, Hisashi Murakami, Yusaku Kashiwagi,Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-15
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] AlNのHVPE高温ホモエピタキシャル成長における基板昇降温時表面劣化の原因2014
- Author(s)
  東城俊介，田中凌平，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道札幌市）
- Year and Date
  2014-09-17
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Hydride Vapor Phase Epitaxy and Doping of AlN2014
- Author(s)
  Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Baxter Moody, Rie Togashi, Hisashi Murakami, Ramon Collazo, Akinori Koukitu and Zlatko Sitar
- Organizer
  5th International Symposium on Growth of III-Nitrides (ISGN-5)
- Place of Presentation
  Atlanta, Georgia, U.S.A.
- Year and Date
  2014-05-19
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] AlN 高温HVPE成長における基板昇降温プロセスが表面に与える影響2014
- Author(s)
  東城俊介, 田中凌平, 額賀俊成, 富樫理恵, 永島徹, 木下亨, Baxter Moody, 村上尚, Ramon Collazo, 熊谷義直, 纐纈明伯, Zlatko Sitar
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 窒化イットリア安定化ジルコニア(111)基板上への前駆体二段階生成HVPE法による高速InN成長2014
- Author(s)
  小島千恵，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  応用物理学会第3回結晶工学未来塾（2014）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] HVPE法によるAlN/sapphireテンプレート上へのSiドープAlN成長の検討2014
- Author(s)
  田中凌平，東城俊介，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  応用物理学会第3回結晶工学未来塾
- Place of Presentation
  学習院創立百周年記念会館（東京都豊島区）
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] 第一原理計算と統計力学を用いたIII族窒化物の成長における熱化学データの算出2014
- Author(s)
  竹川直，村上尚，熊谷義直，纐纈明伯
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] High-speed InN growth on yttria-stabilized zirconia (111) substrates by a two-step precursor generation HVPE system2014
- Author(s)
  C. Kojima, R. Togashi, R. Imai, N. Fujita, H. Saito, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA ’14)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Year and Date
  2014-04-24
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Selective growth of InN on patterned GaAs(110) substrate by MOVPE2014
- Author(s)
  Hisashi Murakami, Yusuke Kitai, Thieu Quan Tu, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] GaCl-O2系HVPE法によるβ-Ga2O3成長の熱力学解析2014
- Author(s)
  野村一城，後藤健，富樫理恵，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
- Organizer
  応用物理学会第3回結晶工学未来塾（2014）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Influence of Growth Temperature on InGaN Growth by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  Takahide Hirasaki, Yuta Watanabe, Masato Ishikawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Investigation of Ambient Gas after High-Temperature Growth of AlN by Hydride Vapor Phase Epitaxy2014
- Author(s)
  S. Tojo, R. Tanaka, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Centennial Hall, Wroclaw, Poland
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Surface orientation dependence of the In-incorporation of THVPE-grown InGaN studied by first principles and statistical thermodynamics2014
- Author(s)
  Hisashi Murakami, Yu Fujimura, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA ’14)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Year and Date
  2014-04-23
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Theoretical investigation of the influence of surface orientation on In-incorporation during InGaN growth using THVPE2014
- Author(s)
  Yu Fujimura, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications2014
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Temperature Dependence of InGaN Growth by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  T. Hirasaki, Y. Watanabe, T. Hasegawa, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-16
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Influence of Growth Temperature on InGaN Growth by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  Takahide Hirasaki, Yuta Watanabe, Masato Ishikawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Thermal Stability of Group-III Oxides in Mixed Flows of H2 and N2 for Growth of Group-III Nitrides2014
- Author(s)
  C. Eguchi, T. Fukizawa, K. Nomura, K. Goto, R. Togashi, H. Murakami, A. Kuramata, Y. Kumagai and A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors(IWN2014)
- Place of Presentation
  WROCLAW, Poland
- Year and Date
  2014-08-27
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Selective Nucleation of Semi-Polar InN on Patterned GaAs(110) Substrate by MOVPE2014
- Author(s)
  Hisashi Murakami, Yusuke Kitai, Thieu Quan Tu, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors(IWN2014)
- Place of Presentation
  WROCLAW, Poland
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Growth of Si-doped AlN Layers by Hydride Vapor Phase Epitaxy2014
- Author(s)
  R. Tanaka, S. Tojo, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors(IWN2014)
- Place of Presentation
  WROCLAW, Poland
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] InGaN成長におけるIn取り込みの面方位依存性の理論検討2014
- Author(s)
  藤村侑, 村上尚，熊谷義直，纐纈明伯
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Temperature Dependence of InGaN Growth by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  T. Hirasaki, Y. Watanabe, T. Hasegawa, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-16
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Thermodynamic Analysis on Halide Vapor Phase Epitaxy of β-Ga2O32014
- Author(s)
  Kazushiro Nomura, Ken Goto, Rie Togashi, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi and Akinori Koukitu
- Organizer
  2014 MRS Fall Meeting and Exhibit
- Place of Presentation
  Boston, Massachusetts, U.S.A
- Year and Date
  2014-12-01
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Hydride Vapor Phase Epitaxy and Doping of AlN2014
- Author(s)
  Y. Kumagai, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
- Organizer
  5th International Symposium on Growth of III-Nitrides
- Place of Presentation
  The Westin Peachtree Plaza, Atlanta, Georgia, U.S.A.
- Year and Date
  2014-05-19
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE法によるAlN単結晶自立基板の作製とそのデバイス応用2014
- Author(s)
  熊谷義直, 永島徹, 木下亨, 村上尚, 纐纈明伯
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Theoretical investigation of the influence of surface orientation on In-incorporation during InGaN growth using THVPE2014
- Author(s)
  Yu Fujimura, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] トリハライド気相成長法によるInGaN成長における成長温度の影響2014
- Author(s)
  長谷川智康，平崎貴英，渡辺雄太，村上尚，熊谷義直，纐纈明伯
- Organizer
  応用物理学会第3回結晶工学未来塾（2014）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Growth of AlN by Hydride Vapor Phase Epitaxy2014
- Author(s)
  Y. Kumagai, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Centennial Hall, Wroclaw, Poland
- Year and Date
  2014-08-26
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] 前駆体二段階生成HVPE法による窒化イットリア安定化ジルコニア(111)基板上への高速InN成長2014
- Author(s)
  小島千恵，富樫理恵，村上　尚，熊谷義直，纐纈明伯
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 北海道
- Year and Date
  2014-09-17
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] トリハライド気相成長法によるInGaN成長における成長温度の影響2014
- Author(s)
  長谷川智康，平崎貴英，渡辺雄太，村上尚，熊谷義直，纐纈明伯
- Organizer
  応用物理学会第3回結晶工学未来塾（2014）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] トリハライド気相成長法を用いたr面サファイヤ基板上へのGaN成長2014
- Author(s)
  塩野杏奈，竹川直，藤村侑，村上尚，熊谷義直，纐纈明伯
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] HVPE法によるAlN単結晶自立基板の作製とそのデバイス応用2014
- Author(s)
  熊谷義直，永島徹，木下亨，村上尚，纐纈明伯
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学天白キャンパス（愛知県名古屋市）
- Year and Date
  2014-07-25
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System2014
- Author(s)
  R. Togashi, N. Fujita, R. Imai, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 水素・窒素雰囲気下におけるGa2O3分解の検討2014
- Author(s)
  富樫理恵，野村一城，江口千尋，蕗澤孝紘，後藤健，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
- Organizer
  第44回結晶成長国内会議（NCCG-44）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-07
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Growth of Semi-polar InN Layers on GaAs(311)A and (311)B by MOVPE2014
- Author(s)
  Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 前駆体二段階生成HVPE法による高速・高温InN成長2014
- Author(s)
  富樫理恵, 小島千恵，藤田直人，斉藤広伸，村上尚，熊谷義直，纐纈明伯
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] ハライド気相成長法によるβ-Ga2O3のホモエピタキシャル成長2014
- Author(s)
  河原克明，野村一城，後藤健，富樫理恵，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
- Organizer
  応用物理学会第3回結晶工学未来塾（2014）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Estimation of thermochemical data for the growth of group-III nitrides by the combination of first principles and statistical thermodynamic2014
- Author(s)
  Nao Takekawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] HVPE法を用いたβ-Ga2O3結晶成長の熱力学解析2014
- Author(s)
  野村一城，後藤健，富樫理恵，村上尚，熊谷義直，倉又朗人，山腰茂伸，纐纈明伯
- Organizer
  第44回結晶成長国内会議（NCCG-44）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-07
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Growth of AlN by hydride vapor phase epitaxy2014
- Author(s)
  Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Baxter Moody, Rie Togashi, Hisashi Murakami, Ramon Collazo, Akinori Koukitu and Zlatko Sitar
- Organizer
  International Workshop on Nitride Semiconductors(IWN2014)
- Place of Presentation
  WROCLAW, Poland
- Year and Date
  2014-08-26
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Thermal stability of β-Ga2O3 substrates in mixed flows of H2 and N22014
- Author(s)
  C. Eguchi, T. Fukizawa, S. Hanagata, K. Nomura, K. Goto, R. Togashi, H. Murakami, A. Kuramata, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA ’14)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Year and Date
  2014-04-24
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Halide Vapor Phase Epitaxy of β-Ga2O3 Films on (001) β-Ga2O3 Substrate2014
- Author(s)
  Hisashi Murakami, Kazushiro Nomura, Ken Goto, Katsuaki Kawara, Rie Togashi, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi and Akinori Koukitu
- Organizer
  2014 MRS Fall Meeting and Exhibit
- Place of Presentation
  Boston, Massachusetts, U.S.A
- Year and Date
  2014-12-01
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] AlN/sapphireテンプレート上へのSiドープAlN層のHVPE成長の検討2014
- Author(s)
  田中凌平, 東城俊介, 額賀俊成, 富樫理恵, 永島徹, 木下亨, Baxter Moody, 村上尚, Ramon Collazo, 熊谷義直, 纐纈明伯, Zlatko Sitar
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 水素・窒素雰囲気下におけるIII族酸化物基板安定性の熱力学的調査2014
- Author(s)
  江口千尋，蕗澤孝紘，野村一城，後藤健，富樫理恵，村上尚，倉又朗人，熊谷義直，纐纈明伯
- Organizer
  応用物理学会第3回結晶工学未来塾（2014）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 前駆体二段階生成HVPE法によるInNの高速成長の実現2013
- Author(s)
  藤田直人，斉藤広伸，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学, 大阪府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Properties of homoepitaxial AlN layers grown by HVPE on PVT-AlN substrates2013
- Author(s)
  T. Nagashima , Y. Kubota, R. Okayama, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, R. Collazo, and Z. Sitar
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Temperature Dependence of InN Growth by a Novel HVPE System with Two-Step Generation of InCl32013
- Author(s)
  Naoto Fujita, Ryota Imai, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Demonstration of high-speed growth of InN by HVPE with a two-step precursor generation scheme2013
- Author(s)
  Naoto Fujita, R. Imai, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 高温下におけるβ-Ga2O3 (010)基板表面安定性の検討2013
- Author(s)
  蕗澤孝紘, 江口千尋，花形祥子，野村一城，後藤健，富樫理恵，村上尚，倉又朗人，熊谷義直，纐纈明伯
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] High-Speed Growth of InN over 10 μm/h by a Novel HVPE System2013
- Author(s)
  N. Fujita, R. Imai, H. Saito, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Hydride Vapor Phase Epitaxy of InGaN2013
- Author(s)
  A. Koukitu ,T. Hirasaki, H. Murakami and Y. Kumagai
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] GaAs(11n)基板上半極性InN成長の温度依存性2013
- Author(s)
  北井佑典，佐久間文昭，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学, 大阪府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] HVPE法によるPVT-AlN基板上ホモエピタキシャル成長における成長速度増加の検討2013
- Author(s)
  額賀俊成, 坂巻龍之介，平連有紀，永島徹，木下亨，B. Moody，村上尚, R. Collazo，熊谷義直，纐纈明伯，Z. Sitar
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター, 長野県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Semi-polar growth of InN on GaAs(11n) substrate by MOVPE2013
- Author(s)
  Hisashi Murakami, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  2013 Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Cancun, Mexico
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Semi-polar growth of InN on GaAs(11n) substrate by MOVPE2013
- Author(s)
  Hisashi Murakami, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  2013 Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Cancun, Mexico
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Influence of growth parameters on homo-epitaxial growth of thick AlN layers by HVPE on PVT-AlN substrates2013
- Author(s)
  Y. Kumagai, T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, A. Koukitu, and Z. Sitar
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 三塩化ガリウムを用いたGaN高温厚膜成長2013
- Author(s)
  村上尚，宮崎智成，富樫理恵，熊谷義直，纐纈明伯
- Organizer
  第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学, 大阪府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Growth of Semi-polar InN Layers on GaAs(311)A and (311)B by MOVPE2013
- Author(s)
  Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] ハライド気相成長法によるZnO薄膜成長の酸素源の検討2013
- Author(s)
  神崎直人, 伊佐雄太，康松潤，富樫理恵，村上尚，熊谷義直，柏木勇作，纐纈明伯
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] High temperature growth of thick GaN using GaCl3-NH3 system2013
- Author(s)
  Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Thermodynamic analysis of HVPE-Is it possible to grow InGaN by HVPE?-2013
- Author(s)
  A. Koukitu, K. Hanaoka, H. Murakami, Y.Kumagai
- Organizer
  2012 Meijo International Symposium on Nitride Semiconductors (MSN2012)
- Place of Presentation
  Meijo University(愛知県)
- Year and Date
  2013-02-28
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] HVPE法による深紫外光透過性を有する高品質AlNの成長2013
- Author(s)
  額賀俊成，坂巻龍之介，久保田有紀，永島徹，木下亨，B. Moody，J. Xie，村上尚，熊谷義直，纐纈明伯，Z. Sitar
- Organizer
  第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学, 大阪府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] HVPE炉内高温雰囲気下におけるAlN単結晶表面の劣化2013
- Author(s)
  坂巻龍之介, 額賀俊成，平連有紀，永島徹，木下亨，Baxter Moody，村上尚， R. Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター, 長野県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] High-Speed InN Growth Using a Novel Two-Stage Source Generation Hydride Vapor Phase Epitaxy System2013
- Author(s)
  R. Togashi , N. Fujita, R. Imai, H. Murakami, Y. Kumagai,and A. Koukitu
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 前駆体二段階生成HVPE法によるInN成長の温度依存性2013
- Author(s)
  藤田直人, 斉藤広伸，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター, 長野県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 前駆体二段階生成HVPE法によるIn極性およびN極性InNの高速成長2013
- Author(s)
  斉藤広伸, 藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Growth of high quality AlN with deep-UV transparency by HVPE2013
- Author(s)
  Toshinari Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Dependence of InGaN-HVPE growth on group-III input partial pressure2013
- Author(s)
  Takahide Hirasaki, M. Ishikawa, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications2013
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport2013
- Author(s)
  熊谷義直, 久保田有紀，永島徹，木下亨，Rafael Dalmau，Raoul Schlesser，Baxter Moody， Jinqiao Xie，村上尚，纐纈明伯，Zlatko Sitar
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス, 京都府
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 酸化亜鉛HVPEホモエピタキシャル成長のVI族源の比較検討2013
- Author(s)
  神崎直人, 伊佐雄太，康松潤，富樫理恵，村上尚，熊谷義直，柏木勇作，纐纈明伯
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター, 長野県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Influence of Growth Temperature on Homo-Epitaxial Growth of AlN by HVPE on PVT-AlN Substrates2013
- Author(s)
  Toshinari Nukaga, Ryunosuke Sakamaki, Yuki Kubota, Toru Nagashima, Toru Kinoshita, Baxter Moody, Jinqiao Xie, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu and Zlatko Sitar
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 前駆体二段階生成HVPE法によるIn, N各極性InN高速成長の比較検討2013
- Author(s)
  斉藤広伸, 藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター, 長野県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 水素・窒素雰囲気下におけるβ-Ga2O3 (010)基板表面安定性の検討2013
- Author(s)
  蕗澤孝紘, 江口千尋，花形祥子，野村一城，後藤健，富樫理恵，村上尚，倉又朗人，熊谷義直，纐纈明伯
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター, 長野県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System2013
- Author(s)
  R. Togashi, N. Fujita, R. Imai, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Comparative Study on High-Speed InN Growth in Both In- and N-Polarities Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System2013
- Author(s)
  Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] High speed and high temperature growth of GaN by HVPE using GaCl3 as group III-precursor2013
- Author(s)
  H. Murakami ,Y. Kumagai,and A. Koukitu
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] 前駆体二段階生成HVPE装置を用いたIn極性およびN極性InN成長の比較検討2013
- Author(s)
  斉藤広伸，藤田直人，今井亮太，富樫理恵，村上尚，熊谷義直，纐纈明伯
- Organizer
  第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学, 大阪府
- Data Source
  KAKENHI-PROJECT-25390064
[Presentation] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy2012
- Author(s)
  H. Murakami, S. Takenaka, T. Hotta, Y. Kumagai, A. Koukitu
- Organizer
  The 4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg(ロシア)
- Year and Date
  2012-07-19
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] 纐纈明伯,HVPE法を用いたsapphire(0001)基板上InN成長におけるNH3供給分圧依存性2012
- Author(s)
  富樫理恵,山本翔,K.F.Karlsson,村上尚,熊谷義直,P.O.Holtz
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学(福岡県)
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] HVPE成長フリースタンディングAIN基板の異方性を考慮した分光エリプソメトリー評価2012
- Author(s)
  岡本浩, 佐藤崇信, 堤浩一, 鈴木道夫, 熊谷義直, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 纐纈明伯, Z, Sitar
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山大学文京キャンパス
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] MOVPE法によるGaAs(110)上InN成長における水素添加の影響2012
- Author(s)
  堀田哲郎末松真友,竹中佐江,冨樫理恵,村上尚,熊谷義直,纐纈明伯
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-26
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] PVT基板上に成長したCドープHVPE法AIN厚膜の光学特性と構造特性2012
- Author(s)
  永島徹, 久保田有紀, 木下亨, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山大学文京キャンパス
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Homoepitaxial growth of thick AIN layers by HYPE on bulk AIN substrates prepared by PVT2012
- Author(s)
  R, Sakamaki, Y, Kubota, T, Nagashima, T, Kinoshita, R, Dalmau, R, Schlesser, B, Moody, J, Xie, H, Murakami, Y、Kumagai, A, Koukitu, Z, Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2012-10-15
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] GaAs(110)基板上半極性InN成長における水素添加効果2012
- Author(s)
  村上尚,堀田哲郎,富樫理恵,熊谷義直,纐纈明伯
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2012-04-28
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] バルクPVT基板上HVPE成長によるAIN自立基板の作製2012
- Author(s)
  坂巻龍之介, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山大学文京キャンパス
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Thermodynamic analysis of InGaN-HVPE growth using III-bromides and III-iodides2012
- Author(s)
  T. Hirasaki, K. Hanaoka, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  The 4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg(ロシア)
- Year and Date
  2012-07-17
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] MOVPE法によるGaAs(110)上InN成長における水素添加の影響2012
- Author(s)
  堀田哲郎末松真友，竹中佐江，冨樫理恵, 村上尚，熊谷義直，纐纈明伯
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Selective MOVPE growth of semi-polar InN layers on GaAs(311)A and (311)B substrates2012
- Author(s)
  Hisashi Murakami, Tetsuro Hotta, Mayu Suematsu, Tadashi Ohachi, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo Convention Center(北海道)
- Year and Date
  2012-10-16
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Optical and structural properties of intentionally C-doped thick HVPE AIN layers grown on PVT AIN substrates2012
- Author(s)
  T, Nagashima, Y, Kubota, T, Kinoshita, R, Schlesser, B, Moody, J, Xie, H, Murakami, Y, Kumagai, A, Koukitu, Z, Sitar
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2012-10-18
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] InGaN成長組成の面方位依存性に関する理論的考察2012
- Author(s)
  藤村侑,村上尚,熊谷義直,纐纈明伯
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学(福岡県)
- Year and Date
  2012-11-10
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] MOVPE法によるGaAs(110)上InN成長における水素添加の影響2012
- Author(s)
  堀田哲郎, 末松真友, 竹中佐江, 冨樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] GaAs(311)A及び(311)B上半極性InNのMOVPE成長2012
- Author(s)
  堀田哲郎,富樫理恵,村上尚,熊谷義直,纐纈明伯
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2012-04-28
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Hetero- and Homo-Epitaxy of Thick AIN Layers by Hydride Vapor Phase Epitaxy2012
- Author(s)
  Y, Kumagai, Y, Kubota, T, Nagashima, T, Kinoshita, R, Dalmau, R, Schlesser, B, Moody, J, Xie, H, Murakami, A, Koukitu, Z, Sitar
- Organizer
  2012 Collaborative Conference on Crystal Growth
- Place of Presentation
  Doubletree by Hilton Orlandoat SeaWorld (米国)(招待講演)
- Year and Date
  2012-12-12
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE法による深紫外光透過性を有する高品質AINウェーハーの作製2012
- Author(s)
  坂巻鮨之介, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] その場重量測定法を用いたサファイア表面の反応メカニズムの解明2011
- Author(s)
  吉田崇, 冨樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  科学研究費補助金・特定領域研究・公開シンポジウム窒化物光半導体のフロンティア～材料潜在能力の極限発現～
- Place of Presentation
  東京ガーデンパレス
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 高温下での水素・窒素同時供給によるサファイア基板表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] InN/sapphire(0001)MBEテンプレート上へのInN HVPEにおける成長速度の影響2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] In系窒化物半導体のMOVPE、HVPE成長2011
- Author(s)
  村上尚, 富樫理恵, 稲葉克彦, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス(招待講演)
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE法によるInN/sapphire(0001)テンプレート上InN高速成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Measurement of temperature dependent lattice constants of single crystal AlN and various starting substrates for the growth of AlN2011
- Author(s)
  R.Togashi, M.Sakai, T.Nagashima, J.Tajima, H.Murakami, H.Morioka, T.Yamauchi, K.Saito, Y.Kumagai, K.Takada, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] MOVPE法を用いた半極性InN(1013)低温成長への水素添加の影響2011
- Author(s)
  竹中佐江, 末松真友，堀田哲郎，村上尚，熊谷義直，纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Self epitaxial lateral overgrowth of HVPE-AlN layers on 6H-SiC (0001) substrates by the intentional formation of non c-axis oriented AlN grains2011
- Author(s)
  H.Murakami, S.Sekiguchi, M.Ishizuki, R.Togashi, K.Takada, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Crack in HVPE grown 2H-AlN films on AlN templates prepared by PA-MBE using AM-MEE2011
- Author(s)
  T.Ohachi, N.Yamabe, Y.Yamamoto, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire(0001)テンプレート上AlN HVPE成長における成長速度増加の検討2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-03
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Possibility of InGaN HVPE growth with the high growth rate and the wide composition control2011
- Author(s)
  A.Koukitu, K.Hanaoka, H.Murakami, Y.Kumagai
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] サファイア基板の水素・窒素混合雰囲気下熱処理による表面分解およびAlN形成の熱力学的検討2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] In系窒化物半導体のMOVPE、HVPE成長2011
- Author(s)
  村上尚,富樫理恵,稲葉克彦,熊谷義直,纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学(福岡県)
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] その場重量測定法を用いたサファイア表面の反応メカニズムの解明2011
- Author(s)
  吉田崇、富樫理恵、村上尚、熊谷義直、纐纈明伯
- Organizer
  科学研究費補助金・特定領域研究・公開シンポジウム　窒化物光半導体のフロンティア～材料潜在能力の極限発現～
- Place of Presentation
  東京ガーデンパレス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] MOVPE法を用いた半極性InN(10-13)低温成長への水素添加の影響2011
- Author(s)
  竹中佐江,末松真友,堀田哲郎,村上尚,熊谷義直,纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] GaAs(110)上半極性InN(10-13)成長における窒化及びバッファ層の効果2011
- Author(s)
  趙賢哲, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] MOVPE法によるGaAs(110)上InN{10-13}の成長温度が双晶形成に与える影響2011
- Author(s)
  堀田哲郎,末松真友,趙賢哲,富樫理恵,稲葉克彦,村上尚,熊谷義直,纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学(福岡県)
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Influence of Growth Temperature on the Twin Formation of the InN{10-13} on GaAs(110) by Metalorganic Vapor Phase Epitaxy2011
- Author(s)
  Hisashi Murakami, H.-C. Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  SECC, Glasgow, Scotland
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Influence of Growth Temperature on the Twin Formation of the InN{10-13} on GaAs(110)by Metalorganic Vapor Phase Epitaxy2011
- Author(s)
  Hisashi Murakami, H.-C.Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  SECC, Glasgow, Scotland
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 高温下での水素・窒素同時供給によるサファイア基板表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-05
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 水素・窒素混合雰囲気下熱処理におけるc面サファイア基板表面分解・AlN形成の挙動及びその熱力学解析2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈a明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] MOVPE法によるGaAs(110)上InN{10-13}の成長温度が双晶形成に与える影響2011
- Author(s)
  堀田哲郎, 末松真友, 趙賢哲, 富樫理恵, 稲葉克彦, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] 高温熱処理によるサファイア表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] MOVPE法による高指数面GaAs(311)A及び(311)B基板上への半極性InN成長2011
- Author(s)
  末松真友,竹中佐江,堀田哲郎,村上尚,熊谷義直,纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] InN/sapphire(0001)MBEテンプレート上へのInN HVPEにおける成長速度の影響2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] MOVPE法による高指数面GaAs(311)A及び(311)B基板上への半極性InN成長2011
- Author(s)
  末松真友, 竹中佐江，堀田哲郎，村上尚，熊谷義直，纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] AlN/sapphire(0001)テンプレート上へのAlN HVPE高速成長における成長速度の影響2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 富樫理恵, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 水素・窒素混合雰囲気での高温熱処理によるc面サファイア基板表面分解及びAlN形成2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] HVPEの熱力学的反応解析とリアクタ設計2011
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] MOVPE法による高指数面GaAs(311)A及び(311)B基板上への半極性InN成長2011
- Author(s)
  末松真友, 竹中佐江, 堀田哲郎, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Influence of Growth Temperature on the Twin Formation of the InN{10-13} on GaAs(110) by Metalorganic Vapor Phase Epitaxy2011
- Author(s)
  Hisashi Murakami, H.-C. Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  SECC, Glasgow(スコットランド)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Self epitaxial lateral overgrowth of HVPE-AlN layers on 6H-SiC(0001) substrates by the intentional formation of non c-axis oriented AlN grains2011
- Author(s)
  H.Murakami, S.Sekiguchi, M.Ishizuki, R.Togashi, K.Takada, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII) S3-4
- Place of Presentation
  Koyasan, Wakayama, Japan 招待講演
- Year and Date
  2011-06-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire(0001)テンプレート上へのAlN HVPE高速成長における成長速度の影響2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 富樫理恵, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Formation of AlN on sapphire surface by high temperature heating in the mixed flow of H2 and N22011
- Author(s)
  Y.Kumagai, T.Igi, M.Ishizuki, R.Togashi, H.Murakami, K.Takada, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII) S3-6
- Place of Presentation
  Koyasan, Wakayama, Japan 招待講演
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 水素・窒素混合雰囲気下熱処理におけるc面サファイア基板表面分解・AlN形成の挙動及びその熱力学解析2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] MOVPE法を用いた半極性InN(1013)低温成長への水素添加の影響2011
- Author(s)
  竹中佐江, 末松真友, 堀田哲郎, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] a面サファイア表面の反応メカニズムの原子レベルその場測定2011
- Author(s)
  吉田崇, 阿部創平, 土屋正樹, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] In系窒化物半導体のMOVPE、HVPE成長2011
- Author(s)
  村上尚, 富樫理恵, 稲葉克彦, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会(招待講演)
- Place of Presentation
  九州大学筑紫キャンパス
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] HVPE法によるInN/sapphire(0001)MBEテンプレート上へのInN成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-03
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] サファイア基板の水素・窒素混合雰囲気下熱処理による表面分解および・AlN形成の熱力学的検討2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-05
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] a面サファイア表面の反応メカニズムの原子レベルその場測定2011
- Author(s)
  吉田崇, 阿部創平, 土屋正樹, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Formation of AlN on sapphire surface by high temperature heating in the mixed flow of H_2 and N_22011
- Author(s)
  Y.Kumagai, T.Igi, M.Ishizuki, R.Togashi, H.Murakami, K.Takada, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPEの熱力学的反応解析とリアクタ設計2011
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 水素・窒素混合雰囲気での高温熱処理によるc面サファイア基板表面分解及びAlN形成2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] MOVPE法によるGaAs(110)上InN{10-13}の成長温度が双晶形成に与える影響2011
- Author(s)
  堀田哲郎, 末松真友, 趙賢哲, 富樫理恵, 稲葉克彦, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 高温熱処理によるサファイア表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE法によるInN/sapphire(0001)テンプレート上InN高速成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE法によるInN/sapphire(0001)MBEテンプレート上へのInN成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] AlN/sapphire(0001)テンプレート上AlN HVPE成長における成長速度増加の検討2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Influence of GaN substrate polarity on InN growth by hydride vapor phase epitaxy2010
- Author(s)
  R.Togashi, A.Otake, Y.Higashikawa, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride Vapor Phase Epitaxy of AlN at High Temperatures on Freestanding (0001)AlN Substrates2010
- Author(s)
  Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
- Organizer
  2010 International Conference on Indium Phosphide and Related Materials (22nd IPRM)
- Place of Presentation
  高松シンボルタワー(香川県)
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride Vapor Phase Epitaxy of AlN at High Temperatures on Freestanding (0001)AlN Substrates2010
- Author(s)
  Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
- Organizer
  2010 International Conference on Indium Phosphide and Related Materials (22nd IPRM) WeB3-3
- Place of Presentation
  Kagawa, Japan 口頭発表
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaAs(110)基板上半極性InNのMOVPE成長2010
- Author(s)
  村上尚, 趙賢哲, 末松真友, 富樫理恵, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study on the influence of surface hydrogen coverage on the initial growth process of AlN(0001) surface2010
- Author(s)
  Hikari Suzuki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] サファイア(0001)基板上InN HVPE成長におけるNH_3供給分圧変調効果2010
- Author(s)
  東川義弘, 大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Thermodynamic Analysis on HVPE Growth of InGaN Ternary Alloy2010
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-10
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ gravimetric monitoring of hydrogen etching rates of GaN, sapphire and SiC2010
- Author(s)
  Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
- Organizer
  The 16th International Conference on Crystal Growth in Conjunction with The 14th International Conference on Vapor Growth and Epitaxy (ICCG-16/ICVGE-14)
- Place of Presentation
  Beijing, China 基調講演
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 高温その場X線回折による単結晶AlNの格子定数の温度依存性測定2010
- Author(s)
  酒井美希, 田島純平, 永島徹, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による気相成長法におけるGaN(0001)へのV族原料吸着過程の解析2010
- Author(s)
  鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 単結晶AlNの格子定数の温度依存性2010
- Author(s)
  酒井美希, 田島純平, 永島徹, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] InGaN三元混晶のHVPE成長に関する熱力学的考察2010
- Author(s)
  花岡幸史, 田口悠嘉, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of nucleation behavior in the initial growth stage on the HVPE growth of InN on sapphire (0001) substrates2010
- Author(s)
  Y.Higashikawa, A.Otake, R.Togashi, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN及びAlN成長用初期基板の格子定数の温度依存性測定2010
- Author(s)
  酒井美希, 永島徹, 田島純平, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of InN Films by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)(招待講演)
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of InN Films by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth in Conjunction with The 14th International Conference on Vapor Growth and Epitaxy (ICCG-16/ICVGE-14) DK1
- Place of Presentation
  Beijing, China 招待講演
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 非c軸配向AlNグレインを利用した6H-SiC(0001)基板上AlNのSelf-ELO2010
- Author(s)
  関口修平, 石附正成, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Control of in-plane Epitaxial Relationship of c-plane AlN Layers Grown on a-plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Jumpei Tajima, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010) A1.8
- Place of Presentation
  Tampa, FL, U.S.A. 口頭発表
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] サファイア(0001)基板上InN HVPE成長におけるNH_3供給分圧変調効果2010
- Author(s)
  東川義弘, 大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaN自立基板上InNハイドライド気相成長における基板極性の影響2010
- Author(s)
  富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Effects of growth temperature on the crystal orientation of InN on GaAs(110) by metalorganic vapor phase epitaxy2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaCl_3を用いたGaNのHVPE成長2010
- Author(s)
  山根貴好, 花岡幸史, 近藤秀昭, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] r面 sapphire 基板上a面AIN HVPE成長におけるキャリアガスの影響2010
- Author(s)
  田島純平, 越前史, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Influence of Hydrogen Gas on the Growth of Semi-polar InN2010
- Author(s)
  Hyunchol Cho, Mayu Suematsu, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  Florida (USA)
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による窒化物表面へのV族原料吸着過程の解析2010
- Author(s)
  鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2010-11-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 高温熱処理によるc面sapphire基板表面の窒化2010
- Author(s)
  猪木孝洋, 石附正成, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Two-Step Growth of (0001) ZnO Single Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy2010
- Author(s)
  Rui Masuda, Rie Togashi, Hisashi Murakami Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-10
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] First-principle Study on the Effect of Surface Hydrogen Coverage on the Adsorption Process of Ammonia on the InN(0001) Surfaces2010
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  Florida (USA)
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of Semi-Polar InN Layer on GaAs(110) Surface by MOVPE2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride vapor-phase epitaxy of GaN using GaCl_32010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 高温その場X線回折による単結晶AINの格子定数の温度依存性測定2010
- Author(s)
  酒井美希, 田島純平, 永島徹, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] ハイドライド気相成長法によるGaN自立基板上InN成長の極性依存性2010
- Author(s)
  富樫理恵, 足立裕和, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] ハライド気相成長法によるc面sapphire基板上ZnO二段階成長2010
- Author(s)
  篠塚俊克, 増田塁, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハライド気相成長法を用いたsapphire(0001)基板上ZnO二段階成長2010
- Author(s)
  篠塚俊克, 増田塁, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会年末講演会
- Place of Presentation
  学習院大学(東京都)
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] r面sapphire基板上a面AlN HVPE成長におけるキャリアガスの影響2010
- Author(s)
  田島純平, 越前史, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Control of in-plane Epitaxial Relationship of c-plane AlN Layers Grown on a-plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Jumpei Tajima, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  Florida (USA)
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハイドライド気相成長法によるGaN自立基板上InN成長の極性依存性2010
- Author(s)
  富樫理恵, 足立裕和, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] a面sapphire基板上c面AlN HVPE成長における面内配向性の制御2010
- Author(s)
  田島純平, 越前史, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算によるAlN(0001)表面へのV族原料吸着過程の解析2010
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 窒化物半導体のHVPE成長-表面反応解析から結晶成長へ-2010
- Author(s)
  纐纈明伯, 村上尚, 熊谷義直
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)(基調講演)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] サファイア(0001)基板上InN HVPE成長における成長初期核制御の効果2010
- Author(s)
  東川義弘, 大竹斐, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] r面sapphire基板上a面AlN HVPE成長初期過程におけるキャリアガスの影響2010
- Author(s)
  田島純平, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 水素・窒素混合雰囲気における高温熱処理がc面sapphire基板表面に与える影響2010
- Author(s)
  猪木孝洋, 石附正成, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会年末講演会
- Place of Presentation
  学習院大学(東京都)
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Lattice constants of AlN in the range 25-1600℃ investigated by using a quasi-bulk crystal grown by hydride vapor phase epitaxy2010
- Author(s)
  Yoshinao Kumagai, Miki Sakai, Jumpei Tajima, Toru Nagashima, Rie Togashi, Hisashi Murakami, Hitoshi Morioka, Tsutomu Yamauchi, Keisuke Saito, Kazuya Takada Akinori Koukitu
- Organizer
  The 37th International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  高松シンボルタワー(香川県)
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ gravimetric monitoring of hydrogen etching rates of GaN, sapphire and SiC2010
- Author(s)
  Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)(基調講演)
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Tri-halide vapor-phase epitaxy of GaN2010
- Author(s)
  Takayoshi Yamane, Hisashi Murakami, Koshi Hanaoka, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Effect of High NH_3 Input Partial Pressure on HVPE of InN on (0001) Sapphire Substrates2010
- Author(s)
  Rie Togashi, Aya Otake, Yoshihiro Higashikawa, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Carrier Gas Dependence of a-Plane AlN Layer Growth on r-Plane Sapphire Substrates at Initial Stage by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Jumpei Tajima, Chikashi Echizen, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Temperature dependence of the lattice constants of single crystal AlN2010
- Author(s)
  M.Sakai, J.Tajima, T.Nagashima, R.Togashi, H.Murakami, H.Morioka, T.Yamauchi, K.Saito, Y.Kumagai, K.Takada, A.Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN-HVPE成長のための原料探索-熱力学解析-2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE2009
- Author(s)
  熊谷義直, 江夏悠貴, 石附正成, 富樫理恵, 田島純平, 村上尚, 高田和哉, 纐纈明伯
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Si汚染の低減を目指したAIN-HVPE成長のための原料探索2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)の分解過程の解析2009
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] sapphke(0001)基板上InN HVPE成長における成長温度依存性2009
- Author(s)
  纐纈明伯, 田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 気相成長法におけるGaN(0001)の成長初期過程の理論解析2009
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] 水素雰囲気下におけるAIN(0001)面の分解過程の理論解析2009
- Author(s)
  鈴木ひかり, ウリアナ・パニュコワ, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Temperature dependence of InN growth on(0001)sapphire substrates by atmospheric pressure hydride vapor phase epitaxy2009
- Author(s)
  熊谷義直, 足立裕和, 大竹斐, 東川義弘, 富樫理恵, 村上尚, 纐纈明伯
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  International Convention Center Jeju(韓国)
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] ハイドライド気相成長法による sapphire(0001)基板上InN成長の成長温度依存性2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Theoretical investigation of the decomposition mechanism of AIN(0001)surface under a hydrogen atmosphere2009
- Author(s)
  鈴木ひかり, ウリアナ・パニュコワ, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  International Convention Center Jeiu(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Si汚染の低減を目指したAlN-HVPE成長のための原料探索2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical investigation of the decomposition mechanism of AlN(0001)surface under a hydrogen atmosphere2009
- Author(s)
  鈴木ひかり, ウリアナ・パニュコワ, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE AlN厚膜自発分離の最適化に向けたAlN/sapphire(0001)界面ボイドの拡張制御2009
- Author(s)
  江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 纐纈明伯, 成長モード制御によるMOVPE-InNの高品質化の検討2009
- Author(s)
  趙賢哲, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Two step growth of InN layer on SiO2 patterned GaAs(111)B2009
- Author(s)
  H. -C. Cho, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  28th Electronic Materials Symposium (EMS-27)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] HVPE法を用いたsapphire(0001)基板上InN成長における成長温度の影響2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of 2H-A1N films on Si(111)grown by RF-MBE using an interface reaction epitaxy and AM-MEE for HVPE growth2009
- Author(s)
  T.Ohachi, N.Yamabe, K.Ohkusa, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Two step growth of InN layer on SiO_2 patterned GaAs(111)B2009
- Author(s)
  趙賢哲, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第28回電子材料シンポジウム(EMS-28)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] ハイドライド気相成長法によるsapphire(0001)基板上InN成長の成長温度依存性2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] 水素雰囲気下におけるAlN(0001)面の分解過程の理論解析2009
- Author(s)
  鈴木ひかり, ウリアナ・パニュコワ, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of source precursor for AIN-HVPE to decrease Si-contamination2009
- Author(s)
  纐纈明伯, 田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] AIN-HVPE成長のための原料探索 -熱力学解析-2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)の分解過程の解析2009
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] AlN/sapphire界面ボイドの形成制御により自発分離したAlN自立基板の特性2009
- Author(s)
  内田健悟, 江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Selective Growth of InN on Patterned GaAs(111)B Substrate -Influence of InN Decomposition at the Interface-2009
- Author(s)
  村上尚, 趙賢哲, 熊谷義直, 纐纈明伯
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  International Convention Center Jeiu(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] HVPE法を用いた sapphire(0001)基板上InN成長における成長温度の影響2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Temperature dependence of InN growth on(0001)sapphire substrates by atmospheric pressure hydride vapor phase epitaxy2009
- Author(s)
  熊谷義直, 足立裕和大竹斐, 東川義弘, 富樫理恵, 村上尚, 纐纈明伯
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of void formation beneath thin AIN layers by decomposition of sapphire substrates for self-separation of thick AIN layers grown by HVPE2009
- Author(s)
  Y.Kumagai, Y.Enatsu, M.Ishizuki, Y.Kubota, J.Tajima, T.Nagashima, H.Murakami, K.Takada, A.Koukitu
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] 成長モード制御によるMOVPE-InNの高品質化の検討2009
- Author(s)
  趙賢哲, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] sapphire(0001)基板上InN HVPE成長における成長温度依存性2009
- Author(s)
  足立裕和, 大竹斐, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Selective growth of InN on patterned GaAs(111)B substrate-Influence of InN decomposition at the interface-2009
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] sapphire(0001)基板上HVPE AIN厚膜自発分離のための界面ボイド拡張制御2009
- Author(s)
  江夏悠貴, 久保田有紀, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Investigation of source precursor for AlN-HVPE to decrease Si-contamination2009
- Author(s)
  纐纈明伯, 田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] sapphire (0001)基板上InN HVPE成長における成長温度依存性2009
- Author(s)
  足立裕和, 大竹斐, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] HVPE AIN厚膜自発分離の最適化に向けたAIN/sapphire(0001)界面ボイドの拡張制御2009
- Author(s)
  江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] AIN/sapphire界面ボイドの形成制御により自発分離したAIN自立基板の特性2009
- Author(s)
  内田健悟, 江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] ハイドライド気相成長法によるsapphire(0001)基板上InN成長の成長温度依存性2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AIN/sapphire界面ボイドの形成を利用した freestanding AIN基板の作製2009
- Author(s)
  内田健悟, 江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] HVPE法を用いたsapphire (0001)基板上InN成長における成長温度の影響2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] sapphire(0001)基板上HVPE AlN厚膜自発分離のための界面ボイド拡張制御2009
- Author(s)
  江夏悠貴, 久保田有紀, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire界面ボイドの形成を利用したfreestanding AlN基板の作製2009
- Author(s)
  内田健悟, 江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 成長モード制御によるMOVPE-InNの高品質化の検討2009
- Author(s)
  趙賢哲, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Selective Growth of InN on Patterned GaAs(111)B Substrate -Influence of InN Decomposition at the Interface-2009
- Author(s)
  Hisashi Murakami, Hyun Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS-8)
- Place of Presentation
  International Convention Center Jeju (韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Two step growth of InN layer on SiO_2 patterned GaAs(111)B2009
- Author(s)
  趙賢哲, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第28回電子材料シンポジウム(EMS-28)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 気相成長法におけるGaN(0001)の成長初期過程の理論解析2009
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of 2H-AlN films on Si(111)grown by RF-MBE using an interface reaction epitaxy and AM-MEE for HVPE growth2009
- Author(s)
  T.Ohachi, N.Yamabe, K.Ohkusa, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Preparation of a crack-free AIN template layer on sapphire substrate by hydride vapor phase epitaxy at 1450℃2008
- Author(s)
  J. Tajima, H. Murakami, Y. Kumagai, K. Takada, A. Koukitu
- Organizer
  2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  ラフォーレ修善寺, 伊豆, 静岡
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of Polarity Dependent InN{0001} Decomposition in N2 and H2 Ambient2008
- Author(s)
  R. Togashi, H. Adachi, T. Kamoshita, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Ab Initio Calculation for an Initial Growth Process of GaN on (0001) and (000-1) Surfaces by Vapor Phase2008
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Controlled Formation of Voids at the AIN and Sapphire Interface by the Sapphire Decomposition for Self-Separation of AIN Layers2008
- Author(s)
  J. Tajima, Y. Kubota, M. Ishizuki, T. Nagashima, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical investigation on the decomposition process of GaN(0001) surface under a hydrogen atmosphere2008
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  ラフォーレ修善寺, 伊豆, 静岡
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of Polarity Dependent InN{0001} Decomposition in N_2 and H_2 Ambient2008
- Author(s)
  R. Togashi, H. Adachi, T. Kamoshita, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 20089
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Progress in Preparation of Freestanding AIN Substrates by Hydride Vapor Phase Epitaxy2008
- Author(s)
  Y. Kumagai, J. Tajima, Y Kubota, M. Ishizuki, R. Togashi, H. Murakami, T. Nagashima, K. Takada, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Facet formation of InN for the growth of high quality InN layers on GaAs (111) B surfaces by MOVPE2008
- Author(s)
  H. Murakami, H.-C. Cho, Y. Kumagai, A. Koukitu
- Organizer
  27th Electronic Materials Symposium(EMS-27)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Improvements in crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure2008
- Author(s)
  H. Murakami, H. -C. Cho, Y. Kumagai, A. Koukitu
- Organizer
  14th International Conference on MetalOrganic Vapor Phase Epitaxy
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Improvements in crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure2008
- Author(s)
  H. Murakami, H.-C. Cho, Y. Kumagai, A. Koukitu
- Organizer
  14th International Conference of Metalorganic Vapor Phase Epitaxy
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ gravimetric monitoring of surface reactions between sapphire and NH_<3>2008
- Author(s)
  K. Akiyama, Y. Ishii, H. Murakami, Y., Kumagai, A. Koukitu
- Organizer
  2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  ラフォーレ修善寺, 伊豆, 静岡
- Year and Date
  2008-07-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situグラヴィメトリック法によるNH3雰囲気下(ooo1)c面サファイア表面反応メカニズム2008
- Author(s)
  秋山和博, 石井泰寛, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  千葉県、日本大学
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Progress in Preparation of Freestanding AlN Substrates by Hydride Vapor Phase Epitaxy2008
- Author(s)
  Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWN2008) We2b-C1
- Place of Presentation
  Montreux Music and Convention Center, Montreux, Switzerland 招待講演
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of Polarity Dependent InN{0001} Decomposition in N_2 and H_2 Ambient2008
- Author(s)
  R. Togashi, H. Adachi, T. Kamoshita, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Facet formation of InN for the growth of high quality InN layers on GaAs (111)B surfaces by MOVPE2008
- Author(s)
  H. Murakami, H. -C. Cho, Y. Kumagai, A. Koukitu
- Organizer
  27th Electronic Materials Symposium (EMS-27)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-20760010
[Presentation] Characterization of a Freestanding AIN Substrate Prepared by Hydride Vapor Phase Epitaxy2007
- Author(s)
  Yoshinao Kumagai, Toru Nagashima, Hisashi Murakami. Kazuya Takada, Akinori Koukitu
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Nevada, Lasvegas, USA
- Year and Date
  2007-09-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride Vapor phase epitaxy of Al_xGa<1_x>N layers on GaN substrates2007
- Author(s)
  Fumitaka Satoh, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] in situ グラヴィメトリック法によるNH3雰囲気下(0001)c面サファイア分解速度の測定2007
- Author(s)
  秋山和博, 石井泰寛, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] High temperature growth of AIN by solid source HVPE with local heating system2007
- Author(s)
  Hisashi Murakami, Ken-ichi Eriguchi, Takako Hiratsuka, Uliana Panyukova, Yoshinao Kumagai, Akinori Koukutu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study of AlN decomposition processes in hydrogen atmosphere2007
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Polarity Control of 2H-AIN templates on Si (111) grown by RF-MBE using a mode change MEE for HVPE growth2007
- Author(s)
  T. Ohachi, H. Shimomura, N. Yamabe, K. Oride, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Groth of thin Protective AIN Layers on Sapphire Substrates at 1065℃ for Hydride Vapor Phase Epitaxy of AIN above 1300℃2007
- Author(s)
  Junpei Tajima, Yuki Kubota, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Nevada, Lasvegas, USA
- Year and Date
  2007-09-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ Gravimetric Monitoring of Decomposition Rate on the Surface of (10-12)r-plane Sapphire for the High Temperature Growth of non-polar AIN2007
- Author(s)
  Kazuhiro Akiyama, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of hydrogen inputpartial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy2007
- Author(s)
  Hisashi MURAKAMI, Jun-ichi TORII, Yoshinao KUMAGAI and Akinori KOUKITU
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] si(111)基板を初期基板に用いたHvPE法によるAIN自立基板の作製2007
- Author(s)
  熊谷義直, 永嶋徹, 村上尚, 高田和哉, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 様々な雰囲気下におけるN極性lnN分解の温度依存性2007
- Author(s)
  富樫理恵, 鴨下朋樹, 西澤雄樹, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法によるsapphire基板上AIN高温成長における中間層導入の効果2007
- Author(s)
  田島純平, 久保田有紀, 永嶋徹, 樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] NH_3雰囲気下(0001)c面サファイア表面反応過程のグラヴィメトリック法によるその場測定2007
- Author(s)
  秋山和博, 石井泰寛, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] High Temperature Growth of High-Quality AIN by Sohd-Source HVPE2007
- Author(s)
  Ken-ichi Eriguchi, Hisashi Murakami, Uliana Panyukova, Yoshinao Kumagai, Shigeo Ohira, Akinori Koukitu
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  滋賀県ラフォーレ琵琶湖
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)および(000-1)面の分解過程の解析2007
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)および(000-1)面の分解過程の解析2007
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Experimental and Ab-Initio Studies of Temperature Dependent InN Decomposition in Various Ambient2007
- Author(s)
  Rie Togashi, Tomoki Kamoshita, Yuuki Nishizawa, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Nevada, Lasvegas, USA
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Decomposition Rate on the Surface of (10-12)r-plane Sapphire Monitored by in situ Gravimetric Monitoring Method for the High Temperature Growth of non-polar AIN2007
- Author(s)
  Kazuhiro Akiyama, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  滋賀県ラフォーレ琵琶湖
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法によるGaN基板上高品質Al_XGa_<1-x>N成長2007
- Author(s)
  村上尚, 佐藤史隆, 秋山和博, 武藤弘, 柴田克幸, 山下宗修, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Ab initio calculation of decomposition GaN (0001) and (000-1) Surfaces2007
- Author(s)
  Hikari Suzuki, Rie Togashi, His ashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study of the decomposition of AIN in a hydrogen atmospher2007
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situグラヴィメトリック法によるNH_3雰囲気下(ooo1)c面サファイア表面反応メカニズム2007
- Author(s)
  秋山和博, 石井泰寛, 村上谷義直, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Polarity-dependent growth of InN on Ga-and N-polar GaN surfaces byhydride vapor phase epitaxy2007
- Author(s)
  Y. Kumagai, R. Togashi, T. Kamoshita, Y. Nishizawa, H. Murakami, A. Koukitu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Effect of hydrogen partial pressure on the growth of InN layers on GaAs (111)A surfaces by metalorganic vapor phase epitaxy2007
- Author(s)
  Hisashi MURAKAMI, Hyun-Chol CH0, Yoshinao KUMAGAI and Akinori KOUKITU
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  滋賀県、ラフォーレ琵琶湖
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaN{0001}基板を用いたInNHVPE成長における極性制御2007
- Author(s)
  鴨下朋樹, 西澤雄樹, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE growth of AIN and AIGaN2007
- Author(s)
  Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 固体AICI_3を用いた光加熱HVPEによるAINの高温成長2007
- Author(s)
  江里口健一, 平塚貴子, 村上尚, 熊谷義直, 大平重男, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法によるSi-doped AlN成長の検討2007
- Author(s)
  久保田有紀, 田島純平, 永嶋徹, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study of AIN decomposition processes in hydrogen atmosphere2007
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 原料分子制御HVPE法によるAIN,AIGaNおよびlnN成長2007
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of high quality AlN with deep-UV transparency by HVPE
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Influence of Growth Temperature on Homo-Epitaxial Growth of AlN by HVPE on PVT-AlN Substrates
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu and Z. Sitar
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Washington, D.C., U.S.A.
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] HVPE炉内高温雰囲気下におけるAlN単結晶表面の劣化
- Author(s)
  坂巻龍之介，額賀俊成，平連有紀，永島徹，木下亨，B. Moody，村上尚，R. Collazo，熊谷義直，纐纈明伯，Z. Sitar
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
- Author(s)
  熊谷義直，久保田有紀，永島徹，木下亨，R. Dalmau，R. Schlesser，B. Moody，J. Xie，村上尚，纐纈明伯，Z. Sitar
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy
- Author(s)
  H. Murakami
- Organizer
  The 4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  Hotel "Saint-Petersburg", St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE法によるPVT-AlN基板上ホモエピタキシャル成長における成長速度増加の検討
- Author(s)
  額賀俊成，坂巻龍之介，平連有紀，永島徹，木下亨，B. Moody，村上尚，R. Collazo，熊谷義直，纐纈明伯，Z. Sitar
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Influence of growth parameters on homo-epitaxial growth of thick AlN layers by HVPE on PVT-AlN substrates
- Author(s)
  Y. Kumagai, T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, A. Koukitu, Z. Sitar
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  Conference on LED and Its Industrial Application '13
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] MOVPE growth of semi-polar InN layers on GaAs(311)A and (311)B substrates
- Author(s)
  Hisashi Murakami
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo Convention Center, Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy
- Author(s)
  Hisashi Murakami
- Organizer
  The 4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  Hotel "Saint-Petersburg", St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-23760008
[Presentation] HVPE法による深紫外光透過性を有する高品質AlNの成長
- Author(s)
  額賀俊成，坂巻龍之介，久保田有紀，永島徹，木下亨，B. Moody，J. Xie，村上尚，熊谷義直，纐纈明伯，Z. Sitar
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学銀杏会館
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] Properties of homoepitaxial AlN layers grown by HVPE on PVT-AlN substrates
- Author(s)
  T. Nagashima, Y. Kubota, R. Okayama, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, R. Collazo, Z. Sitar
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Seeon, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-24360006
[Presentation] GaAs(110)基板上半極性InN成長における水素添加効果
- Author(s)
  村上尚
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学生産技術研究所
- Data Source
  KAKENHI-PROJECT-23760008

1. KUMAGA Yoshinao (20313306)

# of Collaborated Projects: 5 results

# of Collaborated Products: 282 results
2. KOUKITU Akinori (10111626)

# of Collaborated Projects: 3 results

# of Collaborated Products: 237 results
3. 富樫理恵 (50444112)

# of Collaborated Projects: 3 results

# of Collaborated Products: 47 results
4. Yamaguchi Tomohiro (50454517)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
5. SITAR Zlatko

# of Collaborated Projects: 2 results

# of Collaborated Products: 32 results
6. 後藤健 (50572856)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
7. 小西敬太 (50805257)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
8. 佐々木拓生 (90586190)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
9. 本田善央 (60362274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. NAGASHIMA Toru

# of Collaborated Projects: 1 results

# of Collaborated Products: 26 results
11. KINOSHITA Toru

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
12. TUOMISTO Filip

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 草場彰

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
14. 谷川智之

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

MURAKAMI Hisashi 村上 尚

MURAKAMI Hajime 村上 尚

Research Projects

Research Products

Co-Researchers

Fabrication of composition-controlled InGaN alloy thick films by controlling precursor molecules based on thermodynamicsPrincipal Investigator

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Creation of ultra-low defect gallium nitride crystals using a novel hybrid-type high-speed vapor phase epitaxyPrincipal Investigator

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Control of heterointerface region in the heteroepitaxial growth of In-based nitride semiconductors

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Single-process fabrication of group-III nitride pseudo-substrates and devices via vapor phase epitaxy using solid chloridesPrincipal Investigator

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Bottom up creation of singularities by utilization of equilibrium and non-equilibrium crystal growth from vapor phase

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High speed growth of high quality, ultra-thick gallium nitride crystal using newly developed source materialsPrincipal Investigator

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Realization of n-type AlN by clarifying the mechanism of point defect formation in bulk AlN crystal

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Thick and high quarity InGaN growth by THVPE

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Fabrication of non-polar GaN and nitride semiconductor crystals using newly developed control technique of crystal planesPrincipal Investigator

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Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxy

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New Growth Method for Bulk GaN using molecule-controlling method

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Investigation of crystalline orientation of III-nitride semiconductors grown on high-index and non-polar oriented GaAs substratesPrincipal Investigator

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Improvements in crystalline quality of InN for the realization of P-type doping by using a growth mode controlPrincipal Investigator

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MURAKAMI Hisashi 村上尚

MURAKAMI Hajime 村上尚