Takeuchi Wakana 竹内和歌奈

… Alternative Names

TAKEUCHI Wakana 竹内和歌奈

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Researcher Number	90569386
Other IDs
Affiliation (Current)	2025: 愛知工業大学, 工学部, 准教授
Affiliation (based on the past Project Information) *help	2020 – 2023: 愛知工業大学, 工学部, 准教授 2016: 名古屋大学, 工学研究科, 助教 2014 – 2015: 名古屋大学, 工学(系)研究科(研究院), 助教 2013: 名古屋大学, 工学研究科, 助教 2011 – 2012: 名古屋大学, 工学(系)研究科(研究院), 助教 2010: 名古屋大学, 工学研究科, 助教 2009: 名古屋大学, 大学院・工学研究科, 研究員
Review Section/Research Field	Principal Investigator Basic Section 28020:Nanostructural physics-related / Condensed matter physics I Except Principal Investigator Thin film/Surface and interfacial physical properties / Engineering / Science and Engineering / Science and Engineering
Keywords	Principal Investigator 量子ドット / SiCドット / CVD / SiC/BN積層 / BN / SiC / ドーパント不活性化抑制 / 水素の効果 / 水素成長 / DLTS測定 … More / ゲルマニウムースズ / 欠陥評価 / 回復処理 / イオン注入 / 成長 / 欠陥 / MOCVD / MBE / 欠陥制御 / キャリア密度制御 / DLTS / 結晶成長 / 格子欠陥 / GeSn / Ⅳ族混晶半導体 … More Except Principal Investigator エネルギーバンド / 半導体物性 / ゲルマニウム錫 / エレクトロニクス / 結晶工学 / LSI / 欠陥 / 高キャリア移動度 / 結晶成長 / ひずみ / スズ / ゲートスタック / スズ(錫) / 表面・界面 / CMOS / エピタキシャル成長 / 歪 / 錫 / ゲルマニウム / 先端機能デバイス / ドーピング / 電子ビーム励起プラズマ / 単一架橋カーボンナノウォール / ラピッドサーマルアニール / トランスミッションライン法 / 接触抵抗 / 界面構造 / n型伝導カーボンナノウォール / 赤外吸収スペクトル測定 / ラジカル注入型プラズマCVD / n型ドープ / 抵抗値 / 形状制御 / ラジカル注入型プラズマCVD装置 / チャネルエンジニアリング / 電気特性 / カーボンナノウォール / プラズマプロセス / グラフェンシート / カーボンナノ構造体 / 自己組織化 Less

Multilayer SiC quantum dot formation and evaluation of their physical propertiesPrincipal Investigator
- Principal Investigator
  
  Takeuchi Wakana
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 28020:Nanostructural physics-related
- Research Institution
  Aichi Institute of Technology
機能融合デバイス構築に向けたSn系Ⅳ族半導体薄膜の材料設計
- Principal Investigator
  
  財満鎭明
- Project Period (FY)
  2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Control of defects and carrier density in GeSn layerPrincipal Investigator
- Principal Investigator
  
  Takeuchi Wakana
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Condensed matter physics I
- Research Institution
  Nagoya University
Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2010 – 2013
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Nagoya University
Channel Structure Engineering using low-dimensional carbon nano- materials
- Principal Investigator
  
  HORI Masaru
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University

All 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 Other

All Journal Article Presentation Patent

[Journal Article] Characterization of Shallow-and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements2016
- Author(s)
  W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 5 Pages: 3082-3086
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26870261
[Journal Article] Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition2016
- Author(s)
  Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 7-12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26870261
[Journal Article] Impact of Hydrogen Surfactant on Crystallinity of Ge1－xSnx Epitaxial Layers2015
- Author(s)
  T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys
- NAID
  210000145039
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26870261
[Journal Article] High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization2015
- Author(s)
  W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 107 Issue: 2 Pages: 022103-022103
- DOI
  10.1063/1.4926507
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26870261, KAKENHI-PROJECT-26220605
[Journal Article] Epitaxial Ge1-xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin2015
- Author(s)
  Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima
- Journal Title
  
  ECS Solid State Letters
  
  Volume: 4 Issue: 8 Pages: 59-61
- DOI
  10.1149/2.0041508ssl
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870261, KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10698, KAKENHI-PROJECT-14J10705
[Journal Article] Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果2015
- Author(s)
  浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Journal Title
  
  信学技報 IEICE Technical Report
  
  Volume: 115 Pages: 63-68
- Data Source
  KAKENHI-PROJECT-26870261
[Journal Article] MOCVD法により形成した極薄GeO2を用いたAl203/GeOx/Ge構造の電気的特性および構造評価2014
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会rゲートスタック研究会―材料・プロセス・評価の物理―」(第19回研究報告会)
  
  Pages: 131-134
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Stabilized formation of tetragonal ZrO2 thin film with high permittivity2014
- Author(s)
  K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: VOL. 30 Pages: 192-196
- DOI
  10.1016/j.tsf.2014.01.031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Impacts of AlGeO formation by post thermal oxidation of Al203/Ge structure on interfacial properties2014
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: VOL. 30 Pages: 282-287
- DOI
  10.1016/j.tsf.2013.10.084
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] 固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性2014
- Author(s)
  加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会―材料. プロセス・評価の物理―」(第19回研究報告会)
  
  Pages: 37-40
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] 低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件2014
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」(第19回研究報告会)
  
  Pages: 13-16
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Defects Induced by Reactive Ion Etching in Ge Substrate2014
- Author(s)
  Kusumandari, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima
- Journal Title
  
  Advanced Materials Research
  
  Volume: VOL. 896 Pages: 245-248
- DOI
  10.4028/www.scientific.net/amr.896.241
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Importance of Control of Oxidant Partial Pressure on Structural and Electrical Properties of Pr-oxide Films2014
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 30 Pages: 276-281
- DOI
  10.1016/j.tsf.2013.10.088
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用2014
- Author(s)
  竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Journal Title
  
  信学技報
  
  Volume: 114 Pages: 113-118
- Data Source
  KAKENHI-PROJECT-26870261
[Journal Article] Effect of Gate Metal on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure2013
- Author(s)
  Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
- Journal Title
  
  Solid State Electronics
  
  Volume: 83 Pages: 56-60
- DOI
  10.1016/j.sse.2013.01.029
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure2013
- Author(s)
  Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: 417 Pages: 012001-012001
- DOI
  10.1088/1742-6596/417/1/012001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Development of epitaxial growth technology for Ge_<1-x>Sn_x alloy and study of its properties for Ge nanoelectronics2013
- Author(s)
  O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima
- Journal Title
  
  Solid-State Electron
  
  Volume: 83 Pages: 82-86
- DOI
  10.1016/j.sse.2013.01.040
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Al2O3/Ge構造に対する熱酸化機構の解明2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）
  
  Pages: 39-42
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Broad defect depth distribution in germanium substrates induced by CF4 plasma2013
- Author(s)
  Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: VOL. 103 Issue: 3 Pages: 33511-33511
- DOI
  10.1063/1.4815925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al203/Ge Interface2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  ECS Trans.
  
  Volume: VOL. 58 Issue: 9 Pages: 301-308
- DOI
  10.1149/05809.0301ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成2013
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）
  
  Pages: 39-42
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 103 Issue: 8 Pages: 82114-82114
- DOI
  10.1063/1.4819127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Interfacial Reaction Mechanisms in Al_2O_3/Ge Structure by Oxygen Radical2013
- Author(s)
  Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 4S Pages: 04CA08-04CA08
- DOI
  10.7567/jjap.52.04ca08
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Effects of Light Exposure during Plasma Process on Electrical Properties of GeO_2/Ge Structures2013
- Author(s)
  Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 1S Pages: 01AC04-01AC04
- DOI
  10.7567/jjap.52.01ac04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響2013
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）
  
  Pages: 39-42
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] ラジカルプロセスによるAl2O3/Ge界面特性の改善2012
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第17回研究会）
  
  Volume: なし Pages: 125-128
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates2012
- Author(s)
  Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, A. Jensen, D.H. Petersen, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 520 Issue: 8 Pages: 3206-3210
- DOI
  10.1016/j.tsf.2011.10.084
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] ゲート電極の還元性がGe基板上Pr酸化膜のPr価数に与える影響2012
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  信学技報
  
  Volume: 112 Pages: 37-42
- NAID
  110009588302
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation2012
- Author(s)
  Kusumandari, W.Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 1S Pages: 01AJ01-01AJ01
- DOI
  10.1143/jjap.51.01aj01
- NAID
  210000071710
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Growth of Ge_<1-x>Sn_x heteroepitaxial layers with very high Sn contents on InP(001) substrates2012
- Author(s)
  M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 520 Issue: 8 Pages: 3201-3205
- DOI
  10.1016/j.tsf.2011.10.153
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content2012
- Author(s)
  S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka
- Journal Title
  
  ECS Trans.
  
  Volume: 50 Pages: 897-902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Al2O3/Ge に対する酸素熱処理が電気的特性および化学結合状態に与える効果2012
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第17回研究会）
  
  Volume: なし Pages: 129-132
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Al2O3/Ge構造への酸素熱処理および酸素ラジカル処理による界面反応機構の解明2012
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  信学技報
  
  Volume: 112 Pages: 27-32
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr oxide/PrON/Ge Gate Stack Structure2011
- Author(s)
  加藤公彦
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 4S Pages: 04DA17-04DA17
- DOI
  10.1143/jjap.50.04da17
- NAID
  210000070253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors2011
- Author(s)
  B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo
- Journal Title
  
  Microelectron. Eng.
  
  Volume: 88 Issue: 4 Pages: 342-346
- DOI
  10.1016/j.mee.2010.10.025
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Formation of Ni(Ge_<1-x>Sn_x) Layers with Solid-Phase Reaction in Ni/Ge_<1-x>Sn_x/Ge Systems2011
- Author(s)
  T.Nishimura, Y.Shimura, S.Takeuchi, B.Vincent, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Pages: 46-52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors2011
- Author(s)
  B.Vincent, Y.Shimura, S.Takeuchi, T.Nishimura, G.Eneman, A.Firrincieli, J.Demeulemeester, A.Vantomme, T.Clarysse, O.Nakatsuka, S.Zaima, J.Dekoster, M.Caymax, R.Loo
- Journal Title
  
  Microelectron.Eng.
  
  Volume: 88 Pages: 342-346
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer2011
- Author(s)
  C. Merckling, X. Sun, Y. Shimura, A. Franquet, B. Vincent, S. Takeuchi, W. Vandervorst, O. Nakatsuka, S. Zaima, R. Loo, and M. Caymax
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 98 Issue: 19
- DOI
  10.1063/1.3589992
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Pr酸化膜/Si構造へのAl導入による界面反応抑制効果2011
- Author(s)
  古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会研究報告ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
  
  Pages: 51-54
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Ge1-xSnx stressors for strained-Ge CMOS2011
- Author(s)
  S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Issue: 1 Pages: 53-57
- DOI
  10.1016/j.sse.2011.01.022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響2011
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会研究報告ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
  
  Pages: 99-102
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] GeSn Technology : Impact of Sn on Ge CMOS Applications2011
- Author(s)
  S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
- Journal Title
  
  ECS Trans
  
  Volume: 41 Issue: 7 Pages: 231-238
- DOI
  10.1149/1.3633303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Control of Strain Relaxation Behavior of Ge_<1-x>Sn_x Layers, Solid-State Electronics2011
- Author(s)
  Y.Shimura, S.Takeuchi, N.Tsutsui, O.Nakatsuka, A.Sakai, S.Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Pages: 84-88
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] 電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明2011
- Author(s)
  足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会研究報告ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
  
  Pages: 123-126
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(111) and (001) Schottky contacts2011
- Author(s)
  T.Nishimura, O.Nakatsuka, S.Akimoto, W.Takeuchi, S.Zaima
- Journal Title
  
  Microelectron.Eng.
  
  Volume: 88 Pages: 605-609
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Ge_<1-x>Sn_x stressors for strained-Ge CMOS2011
- Author(s)
  S.Takeuchi, Y.Shimura, T.Nishimura, B.Vincent, G.Eneman, T.Clarysse, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Pages: 53-57
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems2011
- Author(s)
  T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Issue: 1 Pages: 46-52
- DOI
  10.1016/j.sse.2011.01.025
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts2011
- Author(s)
  T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima
- Journal Title
  
  Microelectron. Eng.
  
  Volume: 88 Issue: 5 Pages: 605-609
- DOI
  10.1016/j.mee.2010.08.014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy2011
- Author(s)
  M.Adachi, M.Sakashita, H.Kondo, W.Takeuchi, O.Nakatsuka, S.Zaima
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000070244
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique2011
- Author(s)
  加藤公彦
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 10S Pages: 10PE02-10PE02
- DOI
  10.1143/jjap.50.10pe02
- NAID
  210000071422
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Al_2O_3界面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御2011
- Author(s)
  加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会研究報告ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
  
  Pages: 55-58
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy2011
- Author(s)
  M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 4S Pages: 04DA08-04DA08
- DOI
  10.1143/jjap.50.04da08
- NAID
  210000070244
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Control of Strain Relaxation Behavior of Ge1-xSnx Layers2011
- Author(s)
  Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Issue: 1 Pages: 84-88
- DOI
  10.1016/j.sse.2011.01.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure2011
- Author(s)
  K.Kato, M.Sakashita, W.Takeuchi, H.Kondo, O.Nakatsuka, S.Zaima
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000070253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Monolithic self-sustaining nanographene sheet grown using plasma-enhanced chemical vapor deposition2010
- Author(s)
  W.Takeuchi, K.Takeda, M.Hiramatsu, Y.Tokuda, H.Kano, S.Kimura, 0.Sakata, H.Tajiri, M.Hori
- Journal Title
  
  Physical Status Solidi A 207
  
  Pages: 139-143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063011
[Journal Article] Monolithic self-sustaining nanographene sheet grown using plasma-enhanced chemical vapor deposition2010
- Author(s)
  W. Takeuchi, K. Takeda, M. Hiramatsu, Y. Tokuda, H. Kano, S. Kimura, O. Sakata, H. Tajiri, M. Hori
- Journal Title
  
  Physical Status Solidi A Vol.207
  
  Pages: 139-143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063011
[Journal Article] Initial growth process of carbon nanowalls synthesized by radical injection plasma-enhanced chemical vapor deposition2009
- Author(s)
  S.Kondo, S.Kawai, W.Takeuchi, K.Yamakawa, S.Den, H.Kano, M.Hiramatsu, M.Hori
- Journal Title
  
  Journal of Applied Physics 106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063011
[Journal Article] Initial growth process of carbon nanowalls synthesized by radical injection plasma-enhanced chemical vapor deposition2009
- Author(s)
  S. Kondo, S. Kawai, W. Takeuchi, K. Yamakawa, S. Den, H. Kano, M. Hiramatsu, M. Hori
- Journal Title
  
  Journal of Applied Physics Vol.106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063011
[Journal Article] Electrical Conduction Control of Carbon Nanowalls2008
- Author(s)
  W. Takeuchi, M. Ura, M. Hiramatsu, Y. Tokuda, H. Kano, M. Hori
- Journal Title
  
  Applied Physics Letter 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063011
[Journal Article] Highly Reliable Growth Process of Carbon Nanowalls using Radical Injection Plasma-Enhanced Chemical Vapor Deposition2008
- Author(s)
  W. Takeuchi, M. Ura, M. Hiramatsu, Y. Tokuda, H. Kano, M. Hori
- Journal Title
  
  Journal of Vacuum Science & Technology B Vol.26
  
  Pages: 1294-1300
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063011
[Journal Article] Electrical Conduction Control of Carbon Nanowalls2008
- Author(s)
  W.Takeuchi, M.Ura, M.Hiramatsu, Y.Tokuda, H.Kano, M.Hori
- Journal Title
  
  Appl.Phys.Lett. Vol.92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063011
[Patent] カーボンナノウォール及びその製造方法2008
- Inventor(s)
  堀勝、竹内和歌奈、加納浩之
- Industrial Property Rights Holder
  堀勝、NUエコ・エンジニアリング(株)
- Industrial Property Number
  2008-081314
- Filing Date
  2008-03-26
- Data Source
  KAKENHI-PROJECT-18063011
[Patent] カーボンナノウォール及びその製造方法
- Inventor(s)
  堀勝、竹内和歌奈、加納浩之
- Industrial Property Rights Holder
  堀勝、NUエコ・エンジニアリング(株)
- Industrial Property Number
  2008-081314
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] In situ phosphorus doping of Ge and Ge1-xSnx epitaxial layers by low-temperature metal-organic chemical vapor deposition2017
- Author(s)
  S. Ike, W. Takeuchi, O. Nakatsuka and S. Zaima
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  Sendai, Japan
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] DLTS法による半導体材料へのプラズマエッチングダメージ評価2016
- Author(s)
  竹内和歌奈, クスマンダリ, 坂下満男, 中塚理, 徳田豊, 財満鎭明
- Organizer
  応用物理学会特別シンポジウム「応用物理分野で活躍する女性達　－第4回プラズマと応用技術編－」（＠第63回応用物理学会春季学術講演会）
- Place of Presentation
  日本
- Year and Date
  2016-03-19
- Invited
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] MOCVD法を用いたin situ Pドーピングによる高濃度n型Geエピタキシャル成長2016
- Author(s)
  池進一, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition2016
- Author(s)
  S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2016-09-28
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Sn系IV族半導体混晶薄膜の成長と物性評価2016
- Author(s)
  志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会（SDM）, 有機エレクトロニクス研究会（OME）共催
- Place of Presentation
  沖縄県立博物館・美術館
- Year and Date
  2016-04-08
- Invited
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy2016
- Author(s)
  W. Takeuchi, Y. Inuzuka, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials (7th JSPS Silicon Symposium)
- Place of Presentation
  Hawaii, USA
- Year and Date
  2016-11-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Characterization of Crystallinity of Ge1-xSnx Epitaxial Layers Grown by using Metal-Organic Chemical Vapor Deposition2015
- Author(s)
  Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  カナダ
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果2015
- Author(s)
  浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  日本
- Year and Date
  2015-06-19
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Ge1−xSnxエピタキシャル層中における欠陥形成に対する Sn 組成の影響2015
- Author(s)
  浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  日本
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Characterization of electrically active defects in epitaxial GeSn/n-Ge junctions2015
- Author(s)
  W. Takeuchi, Y. Inuzuka, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  日本
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Characterization of Deep-level Defects in Epitaxial Ge1-xSnx/Ge structure2015
- Author(s)
  W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima
- Organizer
  JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  フランス
- Year and Date
  2015-07-09
- Invited
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers2015
- Author(s)
  T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  カナダ
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] 低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件2014
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」(第19回)
- Place of Presentation
  ニューウェルシティー湯河原
- Year and Date
  2014-01-24
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Sbドープn型Ge中のSn関連欠陥の挙動2014
- Author(s)
  竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第14回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋大学、日本
- Year and Date
  2014-12-20
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] 酸化プロセスにおけるゲート絶縁膜/Ge界面の界面準位密度を決定づける物理的要因2014
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性2014
- Author(s)
  加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」(第19回)
- Place of Presentation
  ニューウェルシティー湯河原
- Year and Date
  2014-01-24
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] MOCVD法により形成した極薄GeO2を用いたAl203/GeOx/Ge構造の電気的特性および構造評価2014
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」(第19回)
- Place of Presentation
  ニューウェルシティー湯河原
- Year and Date
  2014-01-24
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge単結晶中の格子欠陥へのSnの効果2014
- Author(s)
  竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Physical Factor of Other Element Incorporation for Tetragonal ZrO2 Formation2013
- Author(s)
  K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  NIMS Conference 2013 Structure Control of Atomic / Molecular Thin Films and Their Applciations
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Defects introduced in germanium substrate by reactive ion etching2013
- Author(s)
  Kusumandari, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Al2O3/Ge interfacial structures by post oxidation technique using oxygen radical2013
- Author(s)
  K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Formation of Tetragonal ZrO2 Thin Film by ALD Method2013
- Author(s)
  K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Development of Gel-xSnx and Gel-x-ySixSny Thin Film Materials for Future Electronic Applications2013
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  International Conference on THERMEC' 2013
- Place of Presentation
  Las Vegas, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] テトラエトキシゲルマニウムによる極薄GeO2膜の形成2013
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  機械振興会館
- Year and Date
  2013-06-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion2013
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 低温固相成長GeへのSn導入による正孔移動度の向上2013
- Author(s)
  竹内和歌奈, 田岡紀之, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第13回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋工業大学
- Year and Date
  2013-12-21
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 酸化剤分圧およびSi拡散の制御によるPr酸化膜結晶構造制御2013
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭一
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  機械振興会館
- Year and Date
  2013-06-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Impacts of AlGeO Formation by Post Thermal Oxidation of Al203/Ge Structure on Interface Properties2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Interface Properties of Al203/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD2013
- Author(s)
  T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCIENCE AND TECHNOLOGY-
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] H2O分圧によるPr価数およびPr酸化膜の結晶構造制御2013
- Author(s)
  加藤公彦，坂下満男，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Pr酸化膜/Ge構造におけるゲート金属が界面反応に与える影響2013
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会 ─材料・プロセス・評価の物理─（第18回研究会）
- Place of Presentation
  湯河原
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Sn-related Group-IV Semiconductor Materials for Electronic and Optoelectronic Applications2013
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  The 3rd International Conference on Nanoteck & Expo
- Place of Presentation
  Las Vegas, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造に対する熱酸化機構の解明2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会 ─材料・プロセス・評価の物理─（第18回研究会）
- Place of Presentation
  湯河原
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Development of Ge_<1-x>Sn_x and Ge_<1-x-y>Si_xSn_y Thin Film Materials for Future Electronic Applications2013
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  International Conference on THERMEC'2013
- Place of Presentation
  Las Vegas, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al203/Ge Interface2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  224th The Electrochemical Society (ECS) Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al203/Ge構造の後熱酸化によるAlGeO形成にともなう界面特性の改善2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2013 (JSAP SCTS2013)
- Place of Presentation
  名古屋大学
- Year and Date
  2013-11-16
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al203/Ge構造における酸化機構の解明と界面反応がその特性に及ぼす影響2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  機械振興会館
- Year and Date
  2013-06-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate2013
- Author(s)
  T. Arahira, M. Fukudome, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2013)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Interfacial Reactions in Al2O3/Ge Structures2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Stabilization for Higher-k Films with Meta-Stable Crystalline Structure2013
- Author(s)
  K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program workshop Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Frankfurt (Oder), Germany
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成2013
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会 ─材料・プロセス・評価の物理─（第18回研究会）
- Place of Presentation
  湯河原
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造の熱酸化による界面構造変化と界面特性との相関関係2013
- Author(s)
  柴山茂久，加藤公彦，坂下満男，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 界面反応機構に基づくAl203/Ge界面構造制御2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Interaction between Sn atoms and Defects Introduced by Ion Implantation in Ge Substrate2013
- Author(s)
  N. Taoka, M. Fukudome, T. Arahira, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program workshop Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Frankfurt (Oder), Germany
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造へのN-O混合ラジカル処理による界面反応と電気的特性の制御 Si(110)基板上におけるGeおよびGe1-xSnxヘテロエピタキシャル成長2012
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明木戸脇翔平,浅野孝典,志村洋介,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造に対する酸素熱処理温度依存性およびその界面反応機構2012
- Author(s)
  柴山茂久,加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content2012
- Author(s)
  S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka
- Organizer
  The PRiME 2012 Joint International (222nd) ECS Meeting
- Place of Presentation
  Honolulu, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure2012
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  The 5th International Conference on PLasma-NanoTechnology & Science (IC-PLANTZ2012)
- Place of Presentation
  Inuyama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications2012
- Author(s)
  O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima
- Organizer
  University of Vigo and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  Vigo, Spain
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate2012
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Growth and Optical Properties of Ge_<1-x>Sn_x Alloy Thin Films with a High Sn Content2012
- Author(s)
  S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka
- Organizer
  The PRiME 2012 Joint International (222nd) ECS Meeting
- Place of Presentation
  Honolulu, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure2012
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 6th International SiGe Technology and Device Meeting (ISTDM2012)
- Place of Presentation
  Barkeley, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 高Sn組成Ge1-xSnx層へのin situ Sbドーピング2012
- Author(s)
  保崎航也，中村茉里香，志村洋介，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] テトラエトキシゲルマニウムを用いた原子層堆積法によるGe酸化膜の形成2012
- Author(s)
  吉田鉄兵，加藤公彦，柴山茂久，坂下満男，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] ゲート金属の還元性に基づくPr酸化膜/Ge界面反応制御2012
- Author(s)
  加藤公彦，坂下満男，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] ラジカルプロセスによるAl2O3/Ge界面特性の改善2012
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-（第１7回研究会）
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 金属電極がPr酸化膜/Ge構造の化学結合状態に与える影響2012
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造へのN-O混合ラジカル処理による界面反応と電気的特性の制御2012
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 超高Sn組成Ge1-xSnx層の光学特性評価2012
- Author(s)
  中村茉里香,志村洋介,竹内和歌菜,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical2012
- Author(s)
  K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] The effect of light exposure on the electrical properties of GeO2/Ge gate stack2012
- Author(s)
  Kusumandari, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)
- Place of Presentation
  Kasugai, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures2012
- Author(s)
  Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)
- Place of Presentation
  Naha, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Potential of GeSn Alloys for Application to Si Nanoelectronics2012
- Author(s)
  S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka
- Organizer
  2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)
- Place of Presentation
  Naha, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] In situ Sb doping in Ge1-xSnx Epitaxial Layers with High Sn Contents2012
- Author(s)
  K. Hozaki, M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Potential of GeSn Alloys for Application to Si Nanoelectronics2012
- Author(s)
  S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka
- Organizer
  2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)
- Place of Presentation
  Naha, Japan(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents2012
- Author(s)
  M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 6th International SiGe Technology and Device Meeting (ISTDM2012)
- Place of Presentation
  Barkeley, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization2012
- Author(s)
  W. Takeuchi, N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Material properties and applications of Ge1-xSnx alloys for Ge Nanoelectronics2012
- Author(s)
  O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima
- Organizer
  The 6th International SiGe Technology and Device Meeting (ISTDM2012)
- Place of Presentation
  Barkeley, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Geに対する酸素熱処理が電気的特性および化学結合状態に与える効果2012
- Author(s)
  柴山茂久,加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-（第１7回研究会）
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 低温固相結晶化による高移動度poly-GeSn層の形成2012
- Author(s)
  竹内和歌奈，田岡紀之，黒澤昌志，福留誉司，坂下満男，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge単結晶中の格子欠陥への熱処理雰囲気および他元素導入の影響2012
- Author(s)
  福留誉司，竹内和歌奈，田岡紀之，坂下満男，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer2012
- Author(s)
  H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima
- Organizer
  IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Material properties and applications of Ge_<1-x>Sn_x alloys for Ge Nanoelectronics2012
- Author(s)
  O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima
- Organizer
  The 6th International SiGe Technology and Device Meeting (ISTDM2012), No. 12.1
- Place of Presentation
  Barkeley, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Characterization of Damages of Al_2O_3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation2011
- Author(s)
  Kusumandari, W.Takeuchi, K.Kato, M.Sakashita, O.Nakatsuka, S.Zaima
- Organizer
  The 3rd International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPLasma2011)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al_2O_3界面層およびラジカル窒化法によるHigh-k/Ge界面構造2011
- Author(s)
  加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明2011
- Author(s)
  足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film2011
- Author(s)
  W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima
- Organizer
  The 15th International Conference on Thin Films (ICTF-15)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Interfacial Properties of Al_2O_3/Ge Gate Stack Structure using Radical Nitridation Technique2011
- Author(s)
  K.Kato, S.Kyogoku, M.Sakashita, W.Takeuchi, H.Kondo, O.Nakatsuka, S.Zaima
- Organizer
  2011 International Workshop on Dielectric Thin Films for Future Electron Devices : Science and Technology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響2011
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] InP基板上への超高Sn組成Ge_<1-x>Sn_xヘテロエピタキシャル層成長2011
- Author(s)
  中村茉里香, 志村洋介, 竹内正太郎, 中塚理, 財満鎭明
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 次世代ナノCMOSにおける物性制御と不純物2011
- Author(s)
  財満鎭明, 中塚理, 竹内正太郎
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effect of Chemical Bonding State on Electrical Properties of Al2O3/Ge Structure2011
- Author(s)
  K. Kato, M Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  The 15th International Conference on Thin Films (ICTF-15)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] ラジカル窒化法によるAl2O3/Ge構造の界面特性改善2011
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Surface and Interfacial Structure by Radical Nitridation Technique for Ge MOS Transistors2011
- Author(s)
  K.Kato, H.Kondo, M.Sakashita, W.Takeuchi, O.Nakatsuka, S.Zaima
- Organizer
  The 4th International Conference on PLAsma-Nano Technology & Science
- Place of Presentation
  Gifu, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Epitaxial Growth of Ge1-xSnx for Strained Ge CMOS Devices2011
- Author(s)
  S. Zaima, Y. Shimura, S. Takeuchi, and O. Nakatsuka
- Organizer
  THERMEC' 2011 (International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec, Canada
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Influence of Light Radiation on Electrical Properties of Al_2O_3/Ge and GeO_2/Ge Gate Stacks in Nitrogen Plasma2011
- Author(s)
  Kusumandari, W.Takeuchi, K.Kato, M.Sakashita, O.Nakatsuka, S.Zaima
- Organizer
  2011 International Workshop on Dielectric Thin Films for Future Electron Devices : Science and Technology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 熱処理によるAl_2O_3/Ge界面構造制御2011
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] GeSn Technology: Impact of Sn on Ge CMOS Applications2011
- Author(s)
  S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
- Organizer
  220th Electro Chemical Society Meeting
- Place of Presentation
  Boston, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Pr酸化膜/Si構造へのAl導入による界面反応抑制効果2011
- Author(s)
  古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Improvement of Al2O3 Interfacial Properties by O2 Annealing2011
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  7th International Conference on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] In-situ Ga Doping to Fully Strained Ge1-xSnx Heteroepitaxial Layers Grown on Ge(001) Substrates2011
- Author(s)
  Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, and S. Zaima
- Organizer
  7th International Conference on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] GeSn Technology : Impact of Sn on Ge CMOS Applications2011
- Author(s)
  S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
- Organizer
  220th Electro Chemical Society Meeting
- Place of Presentation
  Boston, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al_2O_3/Ge及びGeO_2/Geゲートスタック構造における窒素プラズマ中の光照射損傷のPAPE法による分析2011
- Author(s)
  クスマンダリ, 竹内和歌奈, 加藤公彦, 坂下満男, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates2011
- Author(s)
  M. Nakamura, Y. Shimura, S. Takeuchi , O. Nakatsuka, and S. Zaima
- Organizer
  7th International Conference on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ni(Ge_<1-y>Sn_y)/Ge_<1-x>Sn_x/Geコンタクトの形成と結晶構造評価2010
- Author(s)
  西村剛志, 中塚理, 志村洋介, 竹内正太郎, Benjamin Vincent, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo, 財満鎭明
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge_<1-x>Sn_xソース/ドレインストレッサーのためのNi(Ge_<1-y>Sn_y)/Ge_<1-x>Sn_x/Geコンタクト形成2010
- Author(s)
  西村剛志, 中塚理, 志村洋介, 竹内正太郎, Benjamin Vincent, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo, 財満鎭明
- Organizer
  第10回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋工業大学(愛知県)
- Year and Date
  2010-12-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Material Assessment for uni-axial strained Ge pMOS-1 : Characterization of GeSn(B) materials2010
- Author(s)
  B.Vincent, Y.Shimura, S.Takeuchi, T.Nishimura, J.Demeulemeester, G.Eneman, T.Clarysse, W.Vandervorst, A.Vantomme, O.Nakatsuka, S.Zaima, J.Dekoster, M.Caymax, R.Loo
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Synchrotron X-ray diffraction anlysis of carbon nanowalls synthesized by radical-injection plasma-enhanced chemical vapor deposition system2010
- Author(s)
  H.Kondo, W.Takeuchi, S.Kondo, K.Yamakawa, M.Hiramatsu, M.Sekine, M.Hori
- Organizer
  The 3rd International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2010)
- Place of Presentation
  名城大学(愛知県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of Strain Relaxation Behavior of Ge_<1-x>Sn_x Layers : Toward Tensile-Strained Ge Layers with Strain Value over 1%2010
- Author(s)
  Y.Shimura, S.Takeuchi, N.Tsutsui, O.Nakatsuka, A.Sakai, S.Zaima
- Organizer
  5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
- Place of Presentation
  Stockholm, Sweden
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Fabrication of carbon nanomaterials synthesized by plasma enhanced chemical vapor deposition for solar cell applications2010
- Author(s)
  T.Kino, S.Kondo, W.Takeuchi, H.Kondo, K.Ishikawa, M.Sekine, M.Hori
- Organizer
  2^<nd> International Symposium on Advance Plasma Science and its Application (ISPlasma2010)
- Place of Presentation
  名城大学(愛知県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Growth and Characterization of GeSn and Tensile-Strained Ge Layers for High Mobility Channels of CMOS Devices2010
- Author(s)
  O.Nakatsuka, Y.Shimura, S.Takeuchi, S.Zaima
- Organizer
  The 7th Pacific Rim International Conference on Advanced Materials and Processing
- Place of Presentation
  Cairns, Australia
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition2010
- Author(s)
  K.Furuta, W.Takeuchi, M.Sakashita, K.Kato, H.Kondo, O.Nakatsuka, S.Zaima
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Strain Relaxation Behavior of Ge_<1-x>Sn_x Layers for Tensile Strained Ge Layers2010
- Author(s)
  Y.Shimura, S.Takeuchi, O.Nakatsuka, S.Zaima
- Organizer
  218th ECS Meeting
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Initial Nucleation in Carbon Nnowalls Growth on Si and SiO2 Surface2010
- Author(s)
  H.Mikuni, T.Kanda, S.Kondo, W.Takeuchi, K.Yamakawa, K.Takeda, K.Ishikawa, H.Kondo, M.Hiramastu, M.Sekine, M.Hori
- Organizer
  2^<nd> International Symposium on Advance Plasma Science and its Application (ISPlasma2010)
- Place of Presentation
  名城大学(愛知県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Assessment of Ge_<1-x>Sn_x Alloys for Strained Ge CMOS Devices2010
- Author(s)
  S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima
- Organizer
  218th ECS Meeting
- Place of Presentation
  Las Vegas, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] シンクロトロンX線回折によるカーボンナノウオールの結晶構造解析2010
- Author(s)
  近藤博基, 竹内和歌奈, 坂田修身, 田尻寛男, 木村滋, 平松美根男, 堀勝
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Formation of Ni(Ge_<1-x>Sn_x) Layers with Solid-Phase Reaction in Ni/Ge_<1-x>Sn_x/Ge Systems2010
- Author(s)
  T.Nishimura, Y.Shimura, S.Takeuchi, B.Vincent, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Organizer
  5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
- Place of Presentation
  Stockholm, Sweden
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] (Si)GeSn requirements for optical device applications and solar cells2010
- Author(s)
  S.Takeuchi, B.Vincent, K.Temst, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 歪Ge_<1-x>Sn_xへの高濃度不純物ドーピング2010
- Author(s)
  志村洋介, 竹内正太郎, Benjamin Vincent, Geert Eneman, Trudo Clarysse, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo, 中塚理, 財満鎭明
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Bi-axially strained Ge grown on GeSn SRBs2010
- Author(s)
  O.Nakatsuka, S.Takeuchi, Y.Shimura, A.Sakai, S.Zaima
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Tensile-Strained Ge and Ge_<1-x>Sn_x Layers for High-Mobility Channels in Future CMOS Devices2010
- Author(s)
  S.Zaima, O.Nakatsuka, Y.Shimura, S.Takeuchi
- Organizer
  International Conference on Solid-state and Integrated Circuit Technology
- Place of Presentation
  Shanghai, China(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge_<1-x>Sn_x stressors for strained-Ge CMOS2010
- Author(s)
  S.Takeuchi, Y.Shimura, T.Nishimura, B.Vincent, G.Eneman, T.Clarysse, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Organizer
  5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
- Place of Presentation
  Stockholm, Sweden(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] ラジカル窒化がGe-MOS特性に与える影響2010
- Author(s)
  竹内和歌奈, クスマンダリ, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 原子層堆積方により作製したPrAlOの結晶構造および電気的特性2010
- Author(s)
  古田和也, 竹内和歌奈, 坂下満男, 近藤博基, 中塚理, 財満鎭明
- Organizer
  シリコンテクノロジー分科会・第125回シリコンテクノロジー研究会
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2010-06-22
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] GeSn : future applications and strategy2010
- Author(s)
  R.Loo, M.Caymax, B.Vincent, J.Dekoster, S.Takeuchi, O.Nakatsuka, S.Zaima, K.Temst, A.Vantomme
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy2010
- Author(s)
  M.Adachi, M.Sakashita, H.Kondo, W.Takeuchi, O.Nakatsuka, S.Zaima
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors2010
- Author(s)
  K.Kato, H.Kondo, M.Sakashita, W.Takeuchi, O.Nakatsuka, S.Zaima
- Organizer
  The 1st Korea-Japan Symposium on Surface Technology
- Place of Presentation
  Incheon, Korea
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Material Assessment for uni-axial strained Ge pMOS-2 : Formation of Ni(GeSn) Layers with Solid-Phase Reactor2010
- Author(s)
  T.Nishimura, Y.Shimura, S.Takeuchi, B.Vincent, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Tensile-Strained Ge and Ge_<1-x.>Sn_x Layers for High-Mobility Channels in Future CMOS Devices2010
- Author(s)
  S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi
- Organizer
  International Conference on Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai, China(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effect of Valence State of Pr on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure2010
- Author(s)
  K.Kato, M.Sakashita, W.Takeuchi, H.Kondo, O.Nakatsuka, S.Zaima
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Pr酸化膜/Ge構造の界面特性に及ぼすPr酸化膜の価数の影響2010
- Author(s)
  加藤公彦, 竹内和歌奈, 近藤博基, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] カーボンナノウオールの電気特性評価(I)2009
- Author(s)
  下枝弘尚、竹内和歌奈、徳田豊、平松美根男、加納浩之、関根誠、堀勝
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学、茨城県
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Synthesis of Carbon Nanowalls and Their Applications to Electrical Devices2009
- Author(s)
  M. Kashihara, W. Takeuchi, Y. Tokuda, H. Kano, M. Hiramatsu, M. Hori
- Organizer
  The 8^<th> International Workshop of Advanced Plasma Processing and Diagnostics Joint Workshop with Plasma Application Monodzukuri
- Place of Presentation
  Techno Plaza, Gifu
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Fabrication of Single Wall Carbon Nanowall Employing Electron Beam Excited Plasma2009
- Author(s)
  H. Mikuni, W. Takeuchi, K. Takeda, M. Hiramatsu, H. Kano, Y. Tokuda, M. Hori
- Organizer
  The 8^<th> International Workshop of Advanced Plasma Processing and Diagnostics Joint Workshop with Plasma Application Monodzukuri
- Place of Presentation
  Techno Plaza, Gifu
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] a : C-Hを用いたカーボン系太陽電池作製に関する研究2009
- Author(s)
  木野徳重、竹内和歌奈、石川健治、近藤博基、加納裕之、関根誠、堀勝
- Organizer
  第3回プラズマエレクトロニクスインキュベーションホール
- Place of Presentation
  国立中央青少年交流の家(静岡県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Fabrication of Bridge-shaped Carbon Nanowall on Trench Substrates using Electron Beam Excited Plasma Enhanced CVD2009
- Author(s)
  H. Mikuni, W. Takeuchi, M. Hiramatsu, H. Kano, Y. Tokuda, K. Takeda, M. Hori
- Organizer
  1 st International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2009)
- Place of Presentation
  Nagoya University, Nagoya
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 新規カーボンナノ構造体カーボンナノウォールと種々の基板界面の構造解析2009
- Author(s)
  竹内和歌奈、堀勝、木村滋、坂修身、田尻寛男、竹田圭吾、高成剛(招待講演)
- Organizer
  重点ナノテクノロジー支援課題研究成果報告会
- Place of Presentation
  SPring-8放射光普及棟大講堂、兵庫県佐用郡
- Year and Date
  2009-03-12
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] カーボンナノウォールの構造及び電子状態におけるフッ素不純物の影響2009
- Author(s)
  竹内和歌奈、柏原雅好、三国裕之、池本夕佳、森脇太郎、加藤有香子、室隆桂之、木下豊彦、木村滋、平松美根男、加納浩之、徳田豊、関根誠、堀勝
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学、茨城県
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Electronic Structure of Carbon Nanowalls using Resonant Soft-X-Ray Emission Spectroscopy2009
- Author(s)
  W.Takeuchi, M.Hiramatsu, Y.Tokuda, H.Kano, T.Kinoshita, Y.Kato, T.Muro, S.Kimura, M.Hori
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台国際ホテル(宮城県)
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Fabrication of Single Carbon Nanowall Using Electron Beam Excited Plasma Enhanced CVD2009
- Author(s)
  H. Mikuni, W. Takeuchi, K. Takeda, M. Hiramatsu, H. Kano, Y. Tokuda, M. Hori
- Organizer
  The 2 nd International Conference on Plasma-Nano Technology & Science
- Place of Presentation
  IB Building, Nagoya University, Nagoya
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Effects of initial nuclei on carbon nanowalls density2009
- Author(s)
  三國裕之, 近藤真悟, 竹内和歌奈, 山川晃司, 竹田圭吾, 近藤博基, 平松美根男, 関根誠, 堀勝
- Organizer
  第19回日本MRS学術シンポジウム
- Place of Presentation
  横浜市開港記念会館(神奈川県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Growth of Carbon Nanowalls of High Graphitization Employing PECVD2009
- Author(s)
  W. Takeuchi, M. Hiramatsu, H. Kano, Y. Tokuda, M. Hori
- Organizer
  1 st International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2009)
- Place of Presentation
  Nagoya University, Nagoya
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] カーボンナノウォール成長における基板組成効果2009
- Author(s)
  三国裕之、竹内和歌奈、山川晃司、竹田圭吾、平松美根男、加納浩之、関根誠、堀勝
- Organizer
  2009年秋季第70回応用物理学関係連合講演会
- Place of Presentation
  富山大学(富山県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 高輝度放射光を用いたカーボンナノウォールのバンド構造解析2009
- Author(s)
  竹内和歌奈, 木下豊彦, 加藤有香子, 室隆桂之, 池本夕佳, 森脇太郎, 木村滋, 平松美根男, 加納浩之, 徳田豊, 堀勝
- Organizer
  2009年秋季第70回応用物理学関係連合講演会
- Place of Presentation
  富山大学(富山県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 先進プラズマプロセスによるグラフェンマテリアルの開発2009
- Author(s)
  堀勝、竹内和歌奈、近藤博基、平松美根男
- Organizer
  平成21年度日本真空協会12月研究例会
- Place of Presentation
  名古屋大学(愛知県)((招待講演))
- Year and Date
  2009-12-17
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 新規カーボンナノ構造体カーボンナノウォールと種々の基板界面の構造解析2009
- Author(s)
  竹内和歌奈, 堀勝, 木村滋, 坂田修身, 田尻寛男、竹田圭吾, 高島成剛
- Organizer
  重点ナノテクノロジー支援課題研究成果報告会
- Place of Presentation
  SPring-8放射光普及棟大講堂(兵庫県)
- Year and Date
  2009-03-12
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Fabrication of Bridge-shaped Carbon Nanowall by Using Patterned Template2009
- Author(s)
  三國裕之、竹内和歌奈、平松美根男、加納浩之、徳田豊、竹田圭吾、堀勝
- Organizer
  プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
- Place of Presentation
  古屋大学豊田講堂・シンポジオン、名古屋
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 先進プラズマプロセスによるグラフェンマテリアルの開発2009
- Author(s)
  堀勝, 竹内和歌奈, 近藤博基, 平松美根男
- Organizer
  平成21年度日本真空協会12月研究例会
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-12-17
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 低次元カーボン系チャネルエンジニアリング, 科学研究費補助金特定領域研究「シリコンナのエレクトロニクスの新展開」2009
- Author(s)
  堀勝、竹田圭吾、竹内和歌奈、近藤真悟、柏原雅好、三国裕之、下枝弘尚
- Organizer
  ポストスケーリングテクノロジー第5回全体会議
- Place of Presentation
  名古屋大学(愛知県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 単一橋架けカーボンナノウォールの作製制御2009
- Author(s)
  三國裕之、竹内和歌奈、竹田圭吾、平松美根男、加納浩之、徳田豊、堀勝
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学、茨城県
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 低次元カーボン系チャネルエンジニアリング2009
- Author(s)
  堀勝、竹田圭吾、竹内和歌奈、近藤真悟、柏原雅好、三国裕之、下枝弘尚(招待講演)
- Organizer
  科学研究費補助金特定領域研究「シリコンナのエレクトロニクスの新展開」-ポストスケーリングテクノロジー第5回全体会議
- Place of Presentation
  Nagoya University, Nagoya
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Semiconductor Behavior of Carbon Nanowalls Grown by Plasma-Enhanced Chemical Vapor Deposition2009
- Author(s)
  W.Takeuchi, M.Hiramatsu, Y.Tokuda, H.Kano, M.Hori
- Organizer
  New Diamond and Nano Carbons Conference 2009
- Place of Presentation
  Grand Traverse Resort And Spa, Michigan, USA
- Year and Date
  2009-06-08
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Effect of Oxygen Gas Addition to C_2F_6/H_2 Plasma on the Structure of Carbon Nanowalls2008
- Author(s)
  W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano, M. Hori
- Organizer
  4 th International Nanotechnology Conference on Communication and Cooperation
- Place of Presentation
  Hitotsubashi Memorial Hall, Tokyo
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of Structure and Electrical Properties of Carbon Nanowalls : Effect of N_2/O_2 Addition to Fluorocarbon Plasma CVD with H Radical Injection2008
- Author(s)
  W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano, M. Hori
- Organizer
  2008 International Conference on Solid State Device and Materials
- Place of Presentation
  Tsukuba International Congress Center, Tsukuba
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of Structure of Carbon Nanowalls Synthesized by Fluorocarbon Plasma Enhanced Chemical Vapor Deposition2008
- Author(s)
  M. Hori, W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano (Invited)
- Organizer
  ICPP 2008 Satellite Meeting on Plasma Physics and Advanced Applications in ASO
- Place of Presentation
  阿蘇憩いの村、阿蘇
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of the Structures and the Electrical Conduction of Carbon Nanowalls using Additional Gas2008
- Author(s)
  W. Takeuchi
- Organizer
  先進プラズマナノ科学ワークショップ
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2008-05-08
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] On the Growth Mechanism of Carbon Nanowalls using Plasma Enhanced Chemical Vapor Deposition2008
- Author(s)
  M. Hori, W. Takeuchi, S. Kondo, M. Hiramatsu (Invited)
- Organizer
  11 th International Conference on Plasma Surface Engineering
- Place of Presentation
  Kongresshaus (Congress Center), Garmisch-Partenkirchen, Germany
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] カーボンナノウォールデバイス応用に向けたグラファイト構造制御2008
- Author(s)
  竹内和歌奈
- Organizer
  科学研究費補助金特定領域研究「シリコンナノエレクトロニクスの新展開」-ポストスケーリングテクノロジー-第二回成果報告会
- Place of Presentation
  東京都
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of the Structures and the Electrical Conduction of Carbon Nanowalls using Additional Gas2008
- Author(s)
  W. Takeuchi (Invited)
- Organizer
  先進プラズマナノ科学ワークショップ
- Place of Presentation
  名古屋大学、名古屋
- Year and Date
  2008-05-08
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] On the Growth Mechanism of Carbon Nanowalls using Plasma Enhanced Chemical Vapor Deposition2008
- Author(s)
  M.Hori, W.Takeuchi, S.Kondo, M.Hiramatsu (Invited)
- Organizer
  11th International Conference on Plasma Surface Engineering
- Place of Presentation
  Kongresshaus (Congress Center), Garmisch-Partenkirchen, Germany
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 酸素添加ガスによるカーボンナノウォールの構造制御II2008
- Author(s)
  竹内和歌奈
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  千葉県
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] On the Growth Mechanism of Carbon Nanowalls using Plasma Enhanced Chemical Vapor Deposition2008
- Author(s)
  M. Hori, W. Takeuchi, S. Kondo, M. Hiramatsu
- Organizer
  11th International Conference on Plasma Surface Engineering
- Place of Presentation
  Kongresshaus(Congress Center) (ドイツ)
- Year and Date
  2008-09-15
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of Structures and Electrical Properties of Carbon Nanowalls Using Plasma Enhanced CVD Employing N_2/O_2 Addition to C_2F_6/H_2 Gases2008
- Author(s)
  W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano, M. Hori
- Organizer
  AVS 55^<th> International Symposium & Exhibition
- Place of Presentation
  Hynes Convention Center, Boston, MA, USA
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Structural Control of Carbon Nanowalls Using Oxygen Gas Addition to C_2F_6/H_2 Plasma2008
- Author(s)
  Wakana Takeuchi
- Organizer
  The 1st International Conference on Plasma-nanotechnology & Science
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 単一橋架けカーボンナノウォールの作製D2008
- Author(s)
  三國裕之, 竹内和歌奈, 平松美根男, 加納浩之, 徳田豊, 堀勝
- Organizer
  第2回プラズマエレクトロニクスインキュベーションホール
- Place of Presentation
  マキノパークホテル&セミナーハウス、滋賀
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of Graphene Sheet Structure Using Oxygen Gas Addition to C_2F_6/H_2 Plasma2008
- Author(s)
  W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano, M. Hori
- Organizer
  7 th Korea-Japan Workshop on Plasma Technology
- Place of Presentation
  Sungkyunkwan University, Suwon, Korea
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] カーボンナノウォール/Si接合における電気特性評価2008
- Author(s)
  竹内和歌奈, 徳田豊, 加納浩之, 平松美根男, 堀勝
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学、愛知県
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Structural Control of N-doped Carbon Nanowalls using O_2 Effect2008
- Author(s)
  W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano, M, Hori
- Organizer
  2 nd International Conference on New Diamond and Nano Carbons
- Place of Presentation
  Grand Hotel, Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] ラジカル注入プラズマCVD法で作製したカーボンナノウォール構造における酸素ガス添加の効果2008
- Author(s)
  竹内和歌奈
- Organizer
  第25回プラズマプロセシング研究会
- Place of Presentation
  山口県
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of Structure of Carbon Nanowalls Synthesized by Fluorocarbon Plasma Enhanced Chemical Vapor Deposition2008
- Author(s)
  M. Hori, W. Takeuchi, M. Hiramatsu, Y. Tokuda, H. Kano
- Organizer
  ICPP2008 Satellite Meeting on Plasma Physics and Advanced Applications in ASO
- Place of Presentation
  阿蘇憩いの村(熊本県)
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of Structures of Carbon Nanowalls in Plasma Enhanced CVD2007
- Author(s)
  Wakana Takeuchi
- Organizer
  60th Annual Gaseous Electronics Conference
- Place of Presentation
  Arlington, USA
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] The Structure and Electric Conduction of Carbon Nanowalls using Radical Injection Plasma Enhanced CVD2007
- Author(s)
  Wakana Takeuchi
- Organizer
  18th International Symposium on Plasma Chemistry
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Growth and Properties of Carbon Nono Walls (CNW) Using Radical Injection PECVD2007
- Author(s)
  Wakana Takeuchi
- Organizer
  5th International Symposium on Advanced Plasma Processes and Diagnostics & lst International Symposium on Flexible Electronics Technology
- Place of Presentation
  Suwon, Korea
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] 酸素添加ガスによるカーボンナノウォールの構造制御2007
- Author(s)
  竹内和歌奈
- Organizer
  2007年秋季第68回応用物理学会学術講演会
- Place of Presentation
  札幌市
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Effect of Doped Carbon Nanowalls by Nitrogen Addition2007
- Author(s)
  竹内和歌奈
- Organizer
  第20回プラズマ材料科学シンポジウム
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Control of Electric Conduction of Carbon Nanowalls2007
- Author(s)
  Wakana Takeuchi
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] Evaluation and Control of Electric Conduction of Carbon Nanowalls Fabricated by Plasma-Enhanced CVD2007
- Author(s)
  Wakana Takeuchi
- Organizer
  American Vacuum Society 54th International Symposium & Exhibition
- Place of Presentation
  Seattle, USA
- Data Source
  KAKENHI-PROJECT-18063011
[Presentation] InP基板上への超高Sn組成Ge1-xSnx層のヘテロエピタキシャル成長
- Author(s)
  中村茉里香, 志村洋介, 竹内正太郎, 中塚理, 財満鎭明
- Organizer
  第11回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Behaviors of tin related defects in Sb doped n-type germanium
- Author(s)
  W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka and S. Zaima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Japan
- Year and Date
  2015-01-29 – 2015-01-30
- Invited
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Ge1-xSnxエピタキシャル層中の電気的活性な欠陥の挙動
- Author(s)
  竹内和歌奈, 浅野孝典, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス、日本
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] ゲート電極の還元性がGe基板上Pr酸化膜のPr価数に与える影響
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Geゲートスタック構造に対する酸素熱処理の化学結合状態および界面特性に与える効果
- Author(s)
  Al2O3/Geゲートスタック構造に対する酸素熱処理の化学結合状態および界面特性に与える効果柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第11回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge結晶中の格子欠陥への水素及びSn導入の影響
- Author(s)
  福留誉司、竹内和歌奈、坂下満男、田岡紀之、中塚理、財満鎭明
- Organizer
  第12回日本表面科学会中部支部学術講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Transformation of Defects Structure in Germanium by Sn Ion Implantation
- Author(s)
  W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014)
- Place of Presentation
  Fukuoka,Japan
- Year and Date
  2015-08-24 – 2015-08-30
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Electrically-Active Defects in Ge1-xSnx Epitaxtial Layer
- Author(s)
  W. Takeuchi, T. Asano, M. Sakashita, O. Nakatsuka, S. Zaima
- Organizer
  ISPlasma 2015 / IC-PLANTS 2015
- Place of Presentation
  Japan
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Pr酸化膜/Ge構造におけるPrの価数制御に基づく界面反応制御
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers
- Author(s)
  T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  Canada
- Year and Date
  2015-05-17 – 2015-05-22
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure
- Author(s)
  Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure クスマンダリ，竹内和歌奈，加藤公彦，柴山茂久，坂下満男，中塚理，財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effects of Light Exposure during Plasma Process on Electrical Properties of Au/Al2O3/Ge MOS Capacitor
- Author(s)
  Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure クスマンダリ，竹内和歌奈，加藤公彦，柴山茂久，坂下満男，中塚理，財満鎭明
- Organizer
  第11回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用
- Author(s)
  竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会　シリコン材料・デバイス研究会（SDM）,電子デバイス研究会（ED）,電子部品・材料研究会（CPM）共催
- Place of Presentation
  名古屋大学、日本
- Year and Date
  2014-05-28 – 2014-05-29
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Ge1-xSnxエピタキシャル成長における水素サーファクタント導入の効果
- Author(s)
  浅野孝典, 田岡紀之, 保崎航也, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、日本
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Al2O3/Ge構造への酸素熱処理および酸素ラジカル処理による界面反応機構の解明
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
- Organizer
  CNSE and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  Albany, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1-xSnx Layers
- Author(s)
  T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima
- Organizer
  2014 International Conference on Solid State Devices and Materials (SSDM 2014)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Characterization of Crystallinity of Ge1-xSnx Epitaxial Layers Grown by using Metal-Organic Chemical Vapor Deposition
- Author(s)
  Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  Canada
- Year and Date
  2015-05-17 – 2015-05-22
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] Hydrogen Surfactant Epitaxy of Ge1-xSnx Layers
- Author(s)
  T. Asano, N. Taoka, K. Hozaki, W. Takeuchi,M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Belgium
- Year and Date
  2014-11-13 – 2014-11-14
- Data Source
  KAKENHI-PROJECT-26870261
[Presentation] GeSn Alloy for Nanoelectronic and Optoelectronic Devices
- Author(s)
  O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka and S. Zaima
- Organizer
  CNSE and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  Albany, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 有機金属化学気相蒸着法によるGe1-xSnx薄膜成長
- Author(s)
  犬塚雄貴, 池進一, 浅野孝典, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、日本
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26870261

1. ZAIMA Shigeaki (70158947)

# of Collaborated Projects: 2 results

# of Collaborated Products: 155 results
2. SAKASHITA Mitsuo (30225792)

# of Collaborated Projects: 2 results

# of Collaborated Products: 105 results
3. HORI Masaru (80242824)

# of Collaborated Projects: 1 results

# of Collaborated Products: 44 results
4. TAKASHIMA Seigo (80397471)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
5. TAKEDA Keigo (00377863)

# of Collaborated Projects: 1 results

# of Collaborated Products: 14 results
6. TAKENAKA Mitsuru (20451792)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. TANAKA Nobuo (40126876)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. NAKATSUKA Osamu (20334998)

# of Collaborated Projects: 1 results

# of Collaborated Products: 155 results
9. TAKAGI Shinichi (30372402)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 五島敬史郎 (00550146)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 岩田博之 (20261034)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. ASANO Takanori

# of Collaborated Projects: 1 results

# of Collaborated Products: 19 results
13. IKE Shiniti

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
14. INUZUKA Yuki

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
15. WASHIZU Tomoya

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 加藤公彦

# of Collaborated Projects: 0 results

# of Collaborated Products: 4 results

Takeuchi Wakana 竹内 和歌奈

TAKEUCHI Wakana 竹内 和歌奈

Research Projects

Research Products

Co-Researchers

Multilayer SiC quantum dot formation and evaluation of their physical propertiesPrincipal Investigator

Principal Investigator

Project Period (FY)

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機能融合デバイス構築に向けたSn系Ⅳ族半導体薄膜の材料設計

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Control of defects and carrier density in GeSn layerPrincipal Investigator

Principal Investigator

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Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices

Principal Investigator

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Research Institution

Channel Structure Engineering using low-dimensional carbon nano- materials

Principal Investigator

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[Journal Article] Characterization of Shallow-and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements2016

Author(s)

Journal Title

Data Source

[Journal Article] Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition2016

Author(s)

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Data Source

[Journal Article] Impact of Hydrogen Surfactant on Crystallinity of Ge1－xSnx Epitaxial Layers2015

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NAID

Data Source

[Journal Article] High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization2015

Author(s)

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DOI

Data Source

[Journal Article] Epitaxial Ge1-xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin2015

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DOI

Data Source

[Journal Article] Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果2015

Author(s)

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Data Source

[Journal Article] MOCVD法により形成した極薄GeO2を用いたAl203/GeOx/Ge構造の電気的特性および構造評価2014

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Data Source

[Journal Article] Stabilized formation of tetragonal ZrO2 thin film with high permittivity2014

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DOI

Data Source

[Journal Article] Impacts of AlGeO formation by post thermal oxidation of Al203/Ge structure on interfacial properties2014

Author(s)

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DOI

Data Source

[Journal Article] 固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性2014

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Takeuchi Wakana 竹内和歌奈

TAKEUCHI Wakana 竹内和歌奈

[Journal Article] テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成2013