Niwa Masaaki 丹羽正昭

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NIWA Masaaki 丹羽正昭

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Researcher Number	90608936
Other IDs
Affiliation (Current)	2025: 東京大学, 大学院工学系研究科(工学部), 上席研究員
Affiliation (based on the past Project Information) *help	2020: 東京大学, 大学院工学系研究科(工学部), 上席研究員 2018 – 2019: 東北大学, 国際集積エレクトロニクス研究開発センター, 教授 2013 – 2015: 東北大学, 国際集積エレクトロニクス研究開発センター, 教授
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials
Keywords	Principal Investigator 酸素イオン伝導機構 / 極薄電解質臨界膜厚 / 薄膜測定 / イオン輸送機構 / 等価回路 / YSZ / インピーダンススペクトル / 酸素空孔 / 高誘電率絶縁膜 / 伝導キャリア … More / イオン電導 / 電解質膜中の電気伝導 / 電解質膜 / 固体電解質材料 / 極薄YSZ膜 / 結晶構造 / キャリア拡散 / 電子伝導 / イオン伝導 / 極薄電解質膜 / SiO2 / 絨毯爆撃状絶縁破壊痕 / 経時酸化膜絶縁破壊 / Hard Breakdown / Soft Breakdown / ＴＤＤＢ / ＭＯＳゲート絶縁膜 / 炭化ケイ素 / 断面TEM観察 / ヘテロ界面 / 発光解析 / 結晶欠陥 / GaN on Si(001) / SiC MOS / 透過型電子顕微鏡 / ヘテロエピタキシャル成長 / 結晶性 / ゲート絶縁膜 / 信頼性物理 / 表面・界面物理解析 / 絶縁破壊機構 Less

Study of ion transport mechanism in ultra-thin electrolyte membrane for low temperature operation of solid oxide fuel cellPrincipal Investigator
- Principal Investigator
  
  NIWA Masaaki
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Tokyo
  Tohoku University
Fundamental study of high-performance, low-power transistor by hetero interface formationPrincipal Investigator
- Principal Investigator
  
  NIWA Masaaki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University

All 2021 2020 2019 2016 2015 2014 2013 Other

All Journal Article Presentation Book

[Book] Advancing Technology2019
- Author(s)
  Masaaki NIWA
- Total Pages
  3
- Publisher
  Science Impact (www.impact.pub)
- ISBN
- Data Source
  KAKENHI-PROJECT-18H01467
[Journal Article] Ion conductive character of low-yttria-content yttria-stabilized zirconia at low temperature2020
- Author(s)
  Tomonori Nishimura, Toshiya Kojima, Kosuke Nagashio, Masaaki Niwa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBF03-SBBF03
- DOI
  10.35848/1347-4065/abd6dc
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01467
[Journal Article] Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode2016
- Author(s)
  Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa
- Journal Title
  
  Materials Science Forum
  
  Volume: 858 Pages: 485-488
- DOI
  10.4028/www.scientific.net/msf.858.485
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26870043, KAKENHI-PROJECT-25289082
[Journal Article] Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor2016
- Author(s)
  S. Sato, K. Yamabe, T. Endoh, M. Niwa
- Journal Title
  
  Microelectronics Reliability
  
  Volume: 58 Pages: 185-191
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289082
[Journal Article] Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors2014
- Author(s)
  Soshi Sato, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, and Masaaki Niwa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- NAID
  210000144325
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] 高対称相構造を有する低Y2O3濃度 YSZ 薄膜のイオン伝導特性2021
- Author(s)
  西村知紀，小島俊哉，長汐晃輔，丹羽正昭
- Organizer
  第26回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-18H01467
[Presentation] YSZ極薄膜の高温インピーダンス解析2020
- Author(s)
  西村知紀、小島俊哉、長汐晃輔、丹羽正昭
- Organizer
  2020年第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01467
[Presentation] Ion conductivity of low-Y2O3-content yttria-stabilized zirconia2020
- Author(s)
  Tomonori Nishimura, Toshiya Kojima, Kosuke Nagashio, Masaaki Niwa
- Organizer
  2020 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01467
[Presentation] Poly-Si電極を用いたSiC MOSキャパシタの絶縁破壊後に見出した特徴的な破壊箇所2016
- Author(s)
  佐藤創志、山部紀久夫、遠藤哲郎、丹羽正昭
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第21回研究会)
- Place of Presentation
  東レ研修センター　三島(静岡)
- Year and Date
  2016-01-21
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] A shottky barrier between SiC epitaxial layer and Al-C-Si alloy formed by dielectric breakdown of SiC MOS capacitor with aluminum electrode2016
- Author(s)
  S. Sato, K. Yamabe, T. Endoh, M. Niwa
- Organizer
  23 rd International Symposium on the the Physical and Failure Analysis of Integrated Circuits
- Place of Presentation
  Manira Bay Sands, Singapore
- Year and Date
  2016-07-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor2015
- Author(s)
  S. Sato, Y. Hiroi, K. Yamabe, M. Kitabatake, T. Endoh, M. Niwa
- Organizer
  22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
- Place of Presentation
  Lakeshore Hotel, Hsinchu (Republic of China)
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Study of Reliability Physics on High-k/Metal Gate and Power Devices2015
- Author(s)
  M. Niwa
- Organizer
  22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
- Place of Presentation
  Lakeshore Hotel, Hsinchu (Republic of China)
- Year and Date
  2015-06-29
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Failure analysis of SiC MOS capacitor with poly-Si gate electrode2015
- Author(s)
  S. Sato, K. Yamabe, T. Endoh, M. Niwa
- Organizer
  16th International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos (Italy)
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC熱酸化膜MOSキャパシタの絶縁破壊痕表面における炭素の挙動2014
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第61回春季応用物理学会学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC熱酸化膜MOS構造における特徴的な絶縁破壊痕の解析とモデル化2014
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  応用物理学会　薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会　─材料・プロセス・評価の物理─」（第19回研究会）
- Place of Presentation
  ニューウェルシティー湯河原
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] 熱酸化SiC MOSキャパシタの絶縁破壊痕の形状評価2013
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Carpet-Bombing-like Concaves on SiC MOS Capacitors Formed by Dielectric Breakdown2013
- Author(s)
  Soshi Sato, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, and Masaaki Niwa
- Organizer
  2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
- Place of Presentation
  University of Tsukuba, Tokyo Campus
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Basic Study onHybridization Technologies toward Intelligent Power Devices
- Author(s)
  丹羽正昭
- Organizer
  1st CIES Technology Forum -Power Device Project
- Place of Presentation
  大手町産経プラザ(東京都　千代田区)
- Year and Date
  2015-03-19 – 2015-03-20
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC MOSキャパシタのTZDB測定時動画撮影による絨毯爆撃状破壊痕形成メカニズムの解明
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学　湘南キャンパス(神奈川県　平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289082

1. HASUNUMA Ryu (90372341)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. SATO Soshi (80649749)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
4. YAMABE Kikuo (10272171)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
5. 内山潔 (80403327)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 西村知紀 (10396781)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
7. 鳥海明 (50323530)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Niwa Masaaki 丹羽 正昭

NIWA Masaaki 丹羽 正昭

Research Projects

Research Products

Co-Researchers

Study of ion transport mechanism in ultra-thin electrolyte membrane for low temperature operation of solid oxide fuel cellPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Fundamental study of high-performance, low-power transistor by hetero interface formationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] Advancing Technology2019

Author(s)

Total Pages

Publisher

ISBN

Data Source

[Journal Article] Ion conductive character of low-yttria-content yttria-stabilized zirconia at low temperature2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor2016

Author(s)

Journal Title

Data Source

[Journal Article] Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors2014

Author(s)

Journal Title

NAID

Data Source

[Presentation] 高対称相構造を有する低Y2O3濃度 YSZ 薄膜のイオン伝導特性2021

Author(s)

Organizer

Data Source

[Presentation] YSZ極薄膜の高温インピーダンス解析2020

Author(s)

Organizer

Data Source

[Presentation] Ion conductivity of low-Y2O3-content yttria-stabilized zirconia2020

Author(s)

Organizer

Data Source

[Presentation] Poly-Si電極を用いたSiC MOSキャパシタの絶縁破壊後に見出した特徴的な破壊箇所2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] A shottky barrier between SiC epitaxial layer and Al-C-Si alloy formed by dielectric breakdown of SiC MOS capacitor with aluminum electrode2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Study of Reliability Physics on High-k/Metal Gate and Power Devices2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Failure analysis of SiC MOS capacitor with poly-Si gate electrode2015

Author(s)

Niwa Masaaki 丹羽正昭

NIWA Masaaki 丹羽正昭