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YOSHIDA Toyonobu  吉田 豊信

ORCIDConnect your ORCID iD *help
Researcher Number 00111477
Other IDs
Affiliation (based on the past Project Information) *help 2012: 東京大学, 工学(系)研究科(研究院), 教授
2007 – 2012: The University of Tokyo, 大学院・工学系研究科, 教授
2008: The University of Tokyo, 大学院・光学系研究所, 教授
2006: 東京大学, 大学院工学系研究科, 教授
1995 – 2005: 東京大学, 大学院・工学系研究科, 教授 … More
2000: 東京大学, 大学院・工学研究科, 教授
1989 – 1994: 東京大学, 工学部, 教授
1988: 東京大学, 工学部・金属工学科, 教授
1988: 東京大学, 工学部金属工学科, 教授
1987: 東京大学, 工学部, 助教授
1986: 東大, 工学部, 助教授 Less
Review Section/Research Field
Principal Investigator
Material processing/treatments / Material processing/treatments / 金属精錬・金属化学 / Inorganic materials/Physical properties / Metal making engineering
Except Principal Investigator
Metal making engineering / Inorganic materials/Physical properties / プラズマ理工学
Keywords
Principal Investigator
その場計測 / プラズマフラッシュ蒸発法 / SOFC / 発光分光分析 / cBN / ハイブリッドプラズマ / 単一溶射粒子 / 酸化物超伝導体 / 低圧ICP / 原子状酸素 … More / 誘導結合式プラズマ / フリーラジカル / プラズマ / 質量分析 / ダイヤモンド / マイクロ波プラズマジェット / プラズマ加工 / ドーピング / プラズマプロセス / YSZ / 溶射 / AFM / STM / 一貫製造 / 立方晶窒化ホウ素 / Hybridプラズマ / 粒子速度計測 / 高温固体電解質型燃料電池 / BORON NITRIDE NANO ARRAY / RECTIFICATION CHARACTERISTICS / VISCO-ELASTICITY / WIDE BANDGAP SEMICONDUCTOR / N TYPE DOPINGS / HIGH TEMPERATURE ELECTRONICS / ELECTRONIC PROPERTIES / CUBIC BORON NITRIDE THIN FILMS / 臨界損傷 / イオンインプランテーション / スパッタリング / ブラズマCVD / 半導体特性 / ワイドギャップ / BNナノアレイ / 整流特性 / 粘弾性 / ワイドギャップ半導体 / n型ドーピング / 高温半導体 / 電子物性 / cBN薄膜 / MICRO-TRENCH / ZIRCONIA / VISCOSITY / SIMULATION / DEFORMATION AND SOLIDIFICATION / SUPER COOLING / IN-SITU MEASUREMENT / PLASMA SPRAYING / アルミナ / 界面熱抵抗 / 急速凝固 / 数値解析 / 大過冷急速凝固 / 急速変形 / ミクロトレンチ / ジルコニア / 粘性 / シミュレーション / 変形・凝固 / 過冷 / プラズマ溶射 / 立法晶窒化硼素 / 運動量スケーリング / 低バイアス化 / 水素 / 運動量輸送 / rBN / 高周波スパッタリング / 低圧ICP-CVD / 核生成・成長過程 / イオン衝撃 / 立方晶窒化硼素 / in-situ測定 / 熱プラズマ / 大気圧 / 一貫作成プロセス / イットリア安定化ジルコニア / 高周波プラズマ溶射法 / 色素レーザ / 表面相互作用 / 窒化ボロン / エキシマレーザ / 高周波プラズマ / レーザCVD / プラズマCVD / 収率 / シーメンス / エピタキシー / 単結晶シリコン / クラスター / シーメンス法 / 太陽電池 / エピタキシャル成長 / シリコン / メゾプラズマ / IVP-CVD / sputtering / wide bandgap / turbostratic boron nitride / ナノインデンテーション / 電気伝導度 / ワイドバンドギャップ / 乱層構造sp2結合窒化ホウ素 / doping / wide band gap / UV emission / hexagonal boron nitride / cubic boron nitride / 先端機能デパイス / 材料加工・処理 / 表面・界面物性 / 半導体物性 / 先端機能デバイス / cBN 薄膜 / 高温耐環境デバイス / ナノインデンター / SPM / プラズマ材料プロセシング / 最大電力密度 / La_<0.9>Sr_<0.1>MnO_3 / Ni-YSZサツメット / 大口径誘導プラズマ / 開放端電圧 / Ni-YSZサ-メット / ハイブリッドプラズマ溶射法 / 減圧溶射 / QMS‐IEA / 二色高温計 / OMASS / SOLA-VOF / プロセシング / semi in-situ評価 / メタン-水素系CVD / ナノプロセシング用基板 / 電気特性 / Hybridブラズマ / 双晶 / 高酸素雰囲気 / 成膜温度制御 / 原料供給機 / プラズマ・フラッシュ蒸発法 / ダイヤモンド薄膜 / 大気圧・低真空環境下 / ナノプロセシング / サ-メット / ガスタイト / Ar-O_2 / 薄膜 / 発光分光法 / 高圧高温相 / バイアススパッタリング / 低圧気相合成 / パウダ-フィ-ダ / プラズマ診断 / 高速成膜 / 高Tc酸化物超伝導体 / 高周波熱プラズマ / 結晶成長制御 / ダイヤモンドCVD / 微細加工 / 走査型トンネル顕微鏡 / ナノテクノロジ- / トンネル電子線 / 酸素プラズマ / 多目的チャンバ- / NiO / LaCoO_3 / ZrO_2 / ハイブリッドプラズマ溶射 … More
Except Principal Investigator
PCB / Equilibrium Calculation / Plasma Processing / Acetylene / Dioxin / 平衡計算 / プラズマプロセッシング / アセチレン / ダイオキシン / Vapor reaction processing / Liquid reaction processing / Solid reaction processing / Functional inorganic materials / 気相合成プロセス / 液相合成プロセス / 固相合成プロセス / 機能無機材料 / 放電素過程 / 高温プラズマ / 気体レーザー / スペースプ / 半導体プロセ / プラズマ生成 / 放電プラズマ Less
  • Research Projects

    (31 results)
  • Research Products

    (114 results)
  • Co-Researchers

    (24 People)
  •  Next generation mesoplasma SIEMENS technology for direct production of wafer-equivalent thin film solar cellsPrincipal Investigator

    • Principal Investigator
      YOSHIDA Toyonobu
    • Project Period (FY)
      2009 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Material processing/treatments
    • Research Institution
      The University of Tokyo
  •  Development of High-temperature cBN Thin Film DevicesFor Severe EnvironmentsPrincipal Investigator

    • Principal Investigator
      YOSHIDA Toyonobu
    • Project Period (FY)
      2004 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Material processing/treatments
    • Research Institution
      The University of Tokyo
  •  DEVELOPMENT OF NANO-CBN THIN FILM DEVICES WORKING AT HIGH-TEMPERATURES UNDER SEVERE CONDITIONSPrincipal Investigator

    • Principal Investigator
      YOSHIDA Toyonobu
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Material processing/treatments
    • Research Institution
      THE UNIVERSITY OF TOKYO
  •  放電プラズマ現象とその応用に関する企画調査

    • Principal Investigator
      河合 良信
    • Project Period (FY)
      2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      プラズマ理工学
    • Research Institution
      Kyushu University
  •  IN-SITU MEASUREMENT AND SIMULATION FOR DEFORMATION AND SOLIDIFICATION PHENOMENA OF SUPER-COOLED SINGLE DROPLET UNDER PLASMA SPRAY CONDITIONS (2002)Principal Investigator

    • Principal Investigator
      YOSHIDA Toyonobu
    • Project Period (FY)
      2000 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Material processing/treatments
    • Research Institution
      The University of Tokyo
  •  Development of PCB Cracking Method by Plasma Heating with Acetylene and without Dioxin Generations

    • Principal Investigator
      SHIMPO Ryokichi
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Metal making engineering
    • Research Institution
      Musashi Institute of Technology
  •  プラズマ環境AFMの開発とそのプラズマ材料表面プロセス原子スケール制御への応用Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1998
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Inorganic materials/Physical properties
    • Research Institution
      The University of Tokyo
  •  核生成・成長過程独立制御による高品位cBNプラズマ合成Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1996 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Material processing/treatments
    • Research Institution
      The University of Tokyo
  •  誘導結合式・高密度プラズマ堆積プロセスにおけるフリーラジカルの役割と組織制御Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  単一溶射粒子の変形・急冷凝固過程のその場計測Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  ハイブリッドプラズマ溶射法による高性能SOFCの要素開発と集積化Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Metal making engineering
    • Research Institution
      The University of Tokyo
  •  誘導結合式・高密度プラズマ堆積プロセスにおけるフリーラジカルの役割と組織制御Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  単一溶射粒子の変形・急冷凝固過程の伝熱モデリングとその場計測Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  誘導結合式・高密度プラズマ堆積プロセスにおけるフリーラジカル制御Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  単一溶射粒子の変形・急冷凝固過程の伝熱モデリングとその場計測Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  Study on Novel Synthesis and Advanced Processing of Functional Inorganic Materials

    • Principal Investigator
      SHIMADA Masahiko
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for Co-operative Research (A)
    • Research Field
      Inorganic materials/Physical properties
    • Research Institution
      TOHOKU UNIVERSITY
  •  Hybridプラズマ溶射法による高温固体電解質型燃料電池の一貫製造プロセス開発Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  大気圧・低真空環境下でのSTMナノプロセシングPrincipal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  ハイブリッドプラズマ溶射法による高温固体電解質型燃料電池の一貫製造プロセスPrincipal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  STMを用いた大気圧・低真空環境下でのナノプロセシング開発Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  プラズマ・フラッシュ蒸発法による高Jc高温酸化物超伝導膜の高速堆積Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  高周波プラズマ溶射法による高温固体電解質型燃料電池の一貫製造プロセスPrincipal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  STMを用いた原子・分子マニピュレ-タ-の開発Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  マイクロ波プラズマジェットの圧力制御及び特性評価Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  熱プラズマ・フラッシュ蒸発法による高Jc高温超伝導酸化物膜の高速堆積Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  CーBN気相合成Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Institution
      The University of Tokyo
  •  熱プラズマによる高温固体電解質型燃料電池の一貫製造プロセスPrincipal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  マイクロ波を用いた高効率反応性熱プラズマ発生及び特性評価Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  高周波プラズマ溶射法による高温固体燃料電池の一貫作成プロセス開発Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  マイクロ波同軸変換方式による高効率反応性熱プラズマの発生法及び特性評価Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  レーザ照射低圧高密度プラズマ環境下での高圧高温相薄膜の堆積過程に関する研究Principal Investigator

    • Principal Investigator
      吉田 豊信
    • Project Period (FY)
      1986 – 1987
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      金属精錬・金属化学
    • Research Institution
      The University of Tokyo

All 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 1999 Other

All Journal Article Presentation Book Patent

  • [Book] "Plasma processing of nano crystalline semiconductive cubic boron nitride thin films" in "New Industrial Plasma Technology" edited by Y. Kawai

    • Author(s)
      K. Nose and T. Yoshida
    • Publisher
      Wiley-VCH社
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Cavity ring down spectroscopy measurement of H(n=2) density in Mesoplasma for high rate silicon epitaxy2013

    • Author(s)
      S.D.Wu,H.Inoue,M.Kambara,and T.Yoshida
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: (in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Journal Article] Nanocluster dynamics in fast rate epitaxy under mesoplasma condition2013

    • Author(s)
      L. W. Chen, Y. Shibuta, M. Kambara, and T. Yoshida
    • Journal Title

      Chem. Phys. Lett.

      Volume: 564 Pages: 47-53

    • DOI

      10.1016/j.cplett.2013.02.005

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226017, KAKENHI-PROJECT-23656143
  • [Journal Article] Super high-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition2013

    • Author(s)
      S.D.Wu,M.Kambara,T.Yoshida
    • Journal Title

      Plasma Chem Plasma Process

      Volume: 33 Pages: 433-451

    • URL

      http://dx.doi.org/10.1007/s11090-013-9439-7

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Journal Article] Nanocluster dynamics in fast rate epitaxy under mesoplasma condition2013

    • Author(s)
      L.W.Chen,Y.Shibuta,M.Kambara,and T.Yoshida
    • Journal Title

      Chem.Phys.Lett.

      Volume: 564 Pages: 47-53

    • URL

      http://dx.doi.org/10.1016/j.cplett.2013.02.005

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Journal Article] Molecular dynamics simulation of Si nanoclusters in hihg rate and low temperature epitaxy2012

    • Author(s)
      L. W. Chen, Y. Shibuta, M. Kambara, and T. Yoshida
    • Journal Title

      J. Appl. Phys.

      Volume: 111 Issue: 12 Pages: 123301-6

    • DOI

      10.1063/1.4729057

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226017, KAKENHI-PROJECT-23656143
  • [Journal Article] Molecular dynamics simulation of Si nanoclusters in high rate and low temperature epitaxy2012

    • Author(s)
      L.W.Chen,Y.Shibuta,M.Kambara,and T.Yoshida
    • Journal Title

      J.Appl.Phys.

      Volume: 111 Pages: 123301-123306

    • URL

      http://dx.doi.org/10.1063/1.4729057

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Journal Article] Low temperature silicon epitaxy from trichlorosilane via mesoplasma chemical vapor deposition2011

    • Author(s)
      J.Fukuda,M.Kambara,and T.Yoshida
    • Journal Title

      Thin Solid Films

      Volume: 519 Pages: 6759-6762

    • URL

      http://dx.doi.org/10.1016/j.tsf.2011.01.216

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Journal Article] Effects of magnesium doping on growth and electric conductivity of nanocrystalline cubic boron niteride thin films, J. Phys.2009

    • Author(s)
      K. Kojima, K. Nose, M. Kambara, T. Yoshida
    • Journal Title

      D-Applied physics 42[5]

      Pages: 555304-555304

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Evolution of Surface Morphology With Hydrogen Dilution During Silicon Epitaxy by Mesoplasma CVD2009

    • Author(s)
      J.M.A.Diaz, M.Kambara, T.Yoshida
    • Journal Title

      IEEE TRANSACTIONS ON PLASMA SCIENCE 37

      Pages: 1723-1729

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Journal Article] Effects of magnesium doping on growth and electric conductivity of nanocrystalline cubiv boron niteride thin films2009

    • Author(s)
      K. Kojima, K. Nose, M. Kanbara, T. Yoshida
    • Journal Title

      J. Phys.D-Applied physics 42[5]

      Pages: 55304-55304

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Evolution of surface morphology with hydrogen dilution during silicon epitaxy by mesoplasma CVD2009

    • Author(s)
      J.M.A.Diaz,M.Kambara,and T.Yoshida
    • Journal Title

      IEEE Transactions on Plasma Science

      Volume: 37 Issue: 9 Pages: 1723-1729

    • DOI

      10.1109/tps.2009.2024780

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Journal Article] Direct nucleation of cubic boron nitride on silicon substrate2007

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      DIAMOND & RELATED MATERIALS 16

      Pages: 642-644

    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Effects of Si impurity on the nucleation and growth of cubic boron nitride thin films2007

    • Author(s)
      H. Oba , K. Nose and T. Yoshida
    • Journal Title

      Surf. Coat. Technol 201

      Pages: 5502-5502

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Direct nucleation of cubic boron nitride on silicon substrate2007

    • Author(s)
      H.S. Yang, C. Iwamoto, T. Yoshida
    • Journal Title

      Diamond Related Mater 16[3]

      Pages: 642-642

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Semiconducting properties of zinc-doped cubic boron nitridethin films2007

    • Author(s)
      K. Nose and T. Yoshida
    • Journal Title

      J. Appl. Phys 102

      Pages: 63711-63711

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Semiconducting properties of zinc-doped cubic boron nitride thin films2007

    • Author(s)
      K. Nose, T. Yoshida
    • Journal Title

      J. Appl. Phys 102

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Effects of Sl impurity on the nucleation and growth of cubic boron nitride thin films2007

    • Author(s)
      H.Oba, K.Nose, T.Yoshida
    • Journal Title

      SUFRACE & COATING TECUNOLOGY 201

      Pages: 5502-5505

    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] T. YoshidaElectric conductivity of boron nitride thin films enhanced by in situ doping of zinc2006

    • Author(s)
      K. Nose, H. Oba, T. Yoshida
    • Journal Title

      Appl. Phys. Lett 89[11]

      Pages: 112124-112124

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Effects of Si impurity on the nucleation and growth of cubic boron nitride thin films2006

    • Author(s)
      Oba, H, Nose, K, Yoshida, T, et al.
    • Journal Title

      SURFACE & COATINGS TECHNOLOGY in press

    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Electric conductivity of boron nitride thin films enhanced by in situ doping of zinc2006

    • Author(s)
      K.Nose, H.Oba, T.Yoshida
    • Journal Title

      APPLIED PHYSICS LETTERS 89

      Pages: 112124-112124

    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Peculiar deformation characteristics of turbostratic boron nitride thin film2005

    • Author(s)
      H. Yang, C. Iwamoto, and T. Yoshida
    • Journal Title

      Thin Solid Films 483(1-2)

      Pages: 218-221

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Peculiar deformation characteristics of turbostratic boron nitride thin2005

    • Author(s)
      Yang, H, Iwamoto, C, Yoshida, T
    • Journal Title

      THIN SOLID FILMS 483・1-2

      Pages: 218-221

    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Peculiar deformation characteristics of turbostratic boron nitride thin films2005

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Thin Solid Films (印刷中)

    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Electrical characterization of p-type cubic boron nitride/n-type silicon heterojunction diodes2005

    • Author(s)
      Nose, K, Yang, HS, Yoshida, T
    • Journal Title

      DIAMOND AND RELATED MATERIALS 14・8

      Pages: 1297-1301

    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Defect-induced electronic conduction of tBN2005

    • Author(s)
      K. Nose, HS. Yang, H. Oba, and T. Yoshida
    • Journal Title

      thin films, Diamond Related Mater. 14[11-12]

      Pages: 1960-1963

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Mechanical properties of boron nitride films prepared by plasma-enhanced chemical vapor deposition2005

    • Author(s)
      H.S. Yang and T. Yoshida
    • Journal Title

      Surf. Coat. Technol 200[1-4]

      Pages: 984-987

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Electrical characterization of p-type cubic boron nitride / n-type silicon heterojunction diodes2005

    • Author(s)
      K.Nose, H.S.Yang, T.Yoshida
    • Journal Title

      Diamond and Related Materials (印刷中)

    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Mechanical properties of boron nitride films prepared by plasma-enhanced chemical vapor deposition2005

    • Author(s)
      Yang, HS, Yoshida, T
    • Journal Title

      SURFACE & COATINGS TECHNOLOGY 200・1-4

      Pages: 984-987

    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] Electrical characterization of p-type cubic boron nitride/n-type silicon heterojunction diodes2005

    • Author(s)
      K. Nose, HS. Yang, and T. Yoshida
    • Journal Title

      Diamond Related Mater 14[8]

      Pages: 1297-1301

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Journal Article] High-resolution transmission electron microscopy of as-deposited boron nitride on the edge of ultrathin Si flake2004

    • Author(s)
      H.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 95(5)

      Pages: 2337-2341

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Rectification properties of layered boron nitride films on silicon2003

    • Author(s)
      K.Nose, K.Tachibana, T.Yoshida
    • Journal Title

      Applied Physics Letters 83(5)

      Pages: 943-945

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Dynamic and atomistic deformation of sp^2-bonded boron nitride nanoarrays2003

    • Author(s)
      C.Iwamoto, H.S.Yang, S.Watanabe, T.Yoshida
    • Journal Title

      Applied Physics Letters 83(21)

      Pages: 4402-4404

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Interface engineering of cBN films deposited on silicon substrates2003

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 94(2)

      Pages: 1248-1251

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Mass spectrometric syudy of low-pressure inductively coupled plasma for chemical vapor deposition of cubic boron nitride films2003

    • Author(s)
      H.Yang, T.Yoshida
    • Journal Title

      Science and Technology of Advanced Materials 4

      Pages: 613-616

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Mass spectrometric study of low-pressure inductively coupled plasma for chemical vapor deposition of cubic boron nitride films2003

    • Author(s)
      H.Yang, T.Yoshida
    • Journal Title

      Science and Technology of Advanced Materials 4

      Pages: 613-616

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Interface engineering of cBN films deposited on silicon substrates2003

    • Author(s)
      H.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 94(2)

      Pages: 1248-1251

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Nanostructures of the turbostratic BN transition layer in cubic BN thin films deposited by low-pressure inductively coupled plasma-enhanced chemical vapor deposition2002

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 91(10), Part 1

      Pages: 6695-6699

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] High-quality cBN thin films prepared by plasma chemical vapor deposition with time-dependent biasing technique2002

    • Author(s)
      H.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Thin Solid Films 407

      Pages: 67-71

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] High-quality cBN thin films prepared by plasma chemical vapor deposition with time-dependent biasing technique2002

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Thin Solid Films 407

      Pages: 67-71

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Direct growth of c-BN on a mono-structured transition layer by plasma-enhanced chemical vapor deposition2002

    • Author(s)
      C.Iwamoto, H.S.Yang, T.Yoshida
    • Journal Title

      Diamond and Related Materials 11

      Pages: 1854-1857

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride films2002

    • Author(s)
      Y.Yamada-Takamura, T.Yoshida
    • Journal Title

      Journal of Vacuum Science & Technology B 20(3)

      Pages: 936-939

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride films2002

    • Author(s)
      Y.Yamada-Takemura, T.Yoshida
    • Journal Title

      Journal of Vacuum Science & Technology B 20(3)

      Pages: 936-939

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Nanostructures of the turbostratic BN transition layer by plasma-enhanced chemical vapor deposition2002

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 91(10)

      Pages: 6695-6699

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Molecular dynamics study of the role of ion bombardment in cubic boron nitride thin film deposition2001

    • Author(s)
      H.Koga, Y.Nakamura, S.Watanabe, T.Yoshida
    • Journal Title

      Surface and Coating Technology 142-144

      Pages: 911-915

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Dynamic and atomistic deformation of sp2-bonded boron nitride nanoarrays2001

    • Author(s)
      H.Koga, Y.Nakamura, S.Watanabe, T.Yoshida
    • Journal Title

      Science and Technology of Advanced Materials 2

      Pages: 349-356

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Molecular dynamics study of deposition mechanism of cubic boron nitride2001

    • Author(s)
      H.Koga, Y.Nakamura, S.Watanabe, T.Yoshida
    • Journal Title

      Science and Technology of Advanced Materials 2

      Pages: 349-356

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355028
  • [Journal Article] Fabrication of Ni-YSZ Cermet Electrode for SOFC by Hybrid Plasma Splaying and Its Electrical Characterization1999

    • Author(s)
      R.Shimpo, Y.Uehara, T.Yoshida
    • Journal Title

      International Union of Pure and Applied Chemistry, SPC 14, Praha, Czerch

      Pages: 2115-2120

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-11450284
  • [Journal Article] Fabrication of Ni-YSZ Cermet Electrode for SOFC by Hybrid Plasma Splaying and Its Electrical Characterization1999

    • Author(s)
      R.Shimpo, Y.Uehara, T.Yoshida
    • Journal Title

      International Union of Pure and Applied Chemistry (Praha, Czerch) SPC 14

      Pages: 2115-2120

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-11450284
  • [Patent] 熱プラズマ CVD によるシリコン薄膜の堆積方法及びその装置2011

    • Inventor(s)
      吉田豊信 他 3 名
    • Industrial Property Number
      2000-238074
    • Filing Date
      2011-05-20
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Lateral epitaxial overgrowth of silicon on SiO2 patterned substrate by mesoplasma chemical vapor deposition2013

    • Author(s)
      Y. Imamura, L.W. Chen, M. Kambara, T. Yoshida
    • Organizer
      IC-Plants 2013
    • Place of Presentation
      Gifu,Gero Synergy Center
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Nano-cluster assisted high rate and high yield Si epitaxy2013

    • Author(s)
      M. Kambara, L.W.Chen, S.D. Wu, T. Yoshida, (Invited)
    • Organizer
      Asia Core program UT-UT-SNU symposium
    • Place of Presentation
      Tokyo,TOKYO DOME HOTEL
    • Invited
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Enhanced materials yield of epitaxial Si film deposition from SiHCl3 by H2 in mesoplasma CVD2013

    • Author(s)
      S.D. Wu, M. Kambara, T. Yoshida
    • Organizer
      日本金属学会 春季大会
    • Place of Presentation
      東京・東京理科大学神楽坂キャンパス
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] メゾプラズマによるウエハ等価エピタキシャル厚膜高速成長2012

    • Author(s)
      神原淳、吉田豊信
    • Organizer
      第62回マテリアルズテーラリング研究会 (招待講演)
    • Place of Presentation
      軽井沢・(財)加藤科学振興会軽井沢研修所
    • Invited
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] ナノクラスター支援メゾプラズマCVDによるパターン基板上高速単結晶Si厚膜堆積技術2012

    • Author(s)
      L.W.Chen, M.Kambara, T.Yoshida
    • Organizer
      応用物理学会 春期大会
    • Place of Presentation
      東京
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Innovation of plasma spray technology2012

    • Author(s)
      T. Yoshida
    • Organizer
      12th European Plasma Conference, High-tech plasma processes 12 (Plenary lecture)
    • Place of Presentation
      Bologna, Italy
    • Invited
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Improved material efficiency in the Si deposition from SiHCl3 under me soplasma condition2012

    • Author(s)
      M.Kambara, S.D.Wu, T.Yoshida
    • Organizer
      TMS 2012
    • Place of Presentation
      Orland, USA
    • Year and Date
      2012-03-13
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Innovation of plasma spray technology2012

    • Author(s)
      T.Yoshida
    • Organizer
      <12>^ European Plasma Conference, HTPP-12 (Plenary lecture)
    • Place of Presentation
      Bologna,Italy.
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Super High Rate Deposition of Epitaxial Si Films from TCS by Mesoplasma CVD2012

    • Author(s)
      S.D.Wu, M.Kambara, T.Yoshida
    • Organizer
      金属学会
    • Place of Presentation
      横浜
    • Year and Date
      2012-03-29
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Nano-cluster assisted high rate and high yield silicon epitaxy by mesoplasma CVD2012

    • Author(s)
      M. Kambara, L.W.Chen, S.D. Wu, T. Yoshida
    • Organizer
      Collaborative Conference on Crystal Growth (3CG) (Invited)
    • Place of Presentation
      Orlando, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] メゾプラズマCVDによるエピタキシャル成長の高速・高収率化2012

    • Author(s)
      神原淳、Wu Sudong、陳豊文、吉田豊信
    • Organizer
      応用物理学会 秋季大会
    • Place of Presentation
      愛媛・松山大学
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Nanocluster dynamic simulation during high rate epitaxial deposition under mesoplasma condition2012

    • Author(s)
      L. W. Chen, Y. Shibuta, M. Kambara, and T. Yoshida
    • Organizer
      11th APCPST&25th SPSM
    • Place of Presentation
      Kyoto,Kyoto University ROHM plaza
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Mesoplasma CVD for fast rate and high yield Si Epitaxy (Plenary lecture)2012

    • Author(s)
      M.Kambara,L.W.Chen,S.D.Wu,T.Yoshida
    • Organizer
      IUMRS-ECEM 2012
    • Place of Presentation
      Yokohama.
    • Year and Date
      2012-09-26
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Mesoplasma CVD for fast rate and high yield Si Epitaxy2012

    • Author(s)
      M. Kambara, L.W.Chen, S.D. Wu, T. Yoshida
    • Organizer
      IUMRS-ECEM 2012 (Plenary lecture)
    • Place of Presentation
      Yokohama,PACIFICO YOKOHAMA
    • Invited
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Molecular Dynamics Simulation of Si Nano-Clusters in Mesoplasma High Rate And Low Temperature Epitaxy2011

    • Author(s)
      L.W.Chen, M.Kambara, T.Yoshida
    • Organizer
      MRS Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2011-04-25
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] High rate and high yield epitaxial silicon deposition from SiHCl3 under mesoplasma condition2011

    • Author(s)
      S.D.Wu, M.Kambara, T.Yoshida
    • Organizer
      ISPC-20
    • Place of Presentation
      Philadelphia, USA
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Molecular Dynamics Study of Nanoclusters' Role in Mesoplasma Epitaxy2011

    • Author(s)
      L.W.Chen, M.Kambara, T.Yoshida
    • Organizer
      IUMRS 2011
    • Place of Presentation
      Taipei, Taiwan
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Cluster assisted mesoplasma CVD for high rate and high yield silicon epitaxy (invited)2011

    • Author(s)
      M.Kambara,L.W.Chen,S.D.Wu,T.Yoshida
    • Organizer
      Thermec 2011
    • Place of Presentation
      Quebec,Canada.
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Mesoplasma processing for ultrahigh rate and high yield deposition of epitaxial Si thick film from SiHCl_32011

    • Author(s)
      S.D.Wu, M.Kambara, T.Yoshida
    • Organizer
      PE 25^<th>(プラズマエレクトロニクス)
    • Place of Presentation
      名古屋
    • Year and Date
      2011-10-22
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Low temperature silicon epitaxy from trichlorosilane via mesoplasma themical vapor deposition2010

    • Author(s)
      J.Fukuda, M.Kambara, T.Yoshida
    • Organizer
      APCPST2010 (Asia-pacific conference on Plasma Science Technology)
    • Place of Presentation
      Busan (Korea)
    • Year and Date
      2010-07-04
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Innovation of Plasma Spray Technology (Plenary)2010

    • Author(s)
      T.Yoshida
    • Organizer
      3^ PLACIA&PLAM
    • Place of Presentation
      Nagoya.
    • Year and Date
      2010-11-17
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] High rate and high yield silicon deposition under mesoplasma condition for a next generation Siemens technology2010

    • Author(s)
      M.Kambara, J.Fukuda , S.Wu, L.W.Chen, T.Yoshida
    • Organizer
      GEC-ICRP2010 (Gaseous Electronics Conference)
    • Place of Presentation
      Paris (France)
    • Year and Date
      2010-11-04
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Molecular dynamics simulation of Si nanoclusters in mesoplasma epitaxy2010

    • Author(s)
      L.W.Chen, Y.Shibuta, M.Kambara, T.Yoshida
    • Organizer
      第7回金属学会ヤングメタラジスト研究交流会
    • Place of Presentation
      東京
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Innovative Plasma Spray Technology for advanced coatings2010

    • Author(s)
      T.Yoshida
    • Organizer
      35^<th> ICACC (International conference and exposition on advanced ceramics and composites)
    • Place of Presentation
      Daytona Beach (USA)(Invited)
    • Year and Date
      2010-11-27
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Innovation of Plasma Spray Technology (Plenary)2010

    • Author(s)
      T.Yoshida
    • Organizer
      3^<rd> PLACIA & PLAM (Int.Symp.of Plasma Center for Industrial Appl., Plasma Appl Monodzukuri)
    • Place of Presentation
      Nagoya
    • Year and Date
      2010-11-17
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Innovative Plasma Spray Technology for advanced coatings (Invited)2010

    • Author(s)
      T.Yoshida
    • Organizer
      <35>^ ICACC (Int.Conf.Adv. Ceram.Compo.)
    • Place of Presentation
      Daytona Beach,USA.
    • Year and Date
      2010-11-27
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] High yield silicon deposition under mesoplasma condition for a next generation Siemens technology2010

    • Author(s)
      M.Kambara , T.Yoshida
    • Organizer
      SCSI (Silicon for the Chemical and Solar Industry
    • Place of Presentation
      Alesund (Norway)
    • Year and Date
      2010-06-28
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] High yield silicon deposition under mesoplasma condition for a next generation Siemens technology (oral)2010

    • Author(s)
      M.Kambara and T.Yoshida
    • Organizer
      SCSI (Silicon for Chem.Solar Ind.)
    • Place of Presentation
      Alesund, Norway.
    • Year and Date
      2010-06-28
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] A NEW ROUTE FOR HIGH RATE AND LOW TEMPERATURE EPITAXY BY CLUSTER ASSISTED MESOPLASMA CVD(Invited)2009

    • Author(s)
      M.Kambara, J.M.A.Diaz, T.Yoshida
    • Organizer
      Thermec 2009
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2009-08-27
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Effect of substrate transfer on silicon epitaxy during mesoplasma CVD2009

    • Author(s)
      K.Iwamoto, M.Yoshioka, J.M.A.Diaz, M.Kambara, T.Yoshida
    • Organizer
      International conference on plasma surface engineering(AEPSE2009)
    • Place of Presentation
      Busan, KOREA
    • Year and Date
      2009-09-24
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Feasibility study of mesoplasma CVD for direct production of high pure Si thin films from trichlorosilane2009

    • Author(s)
      M.Kambara, J.Fukuda, T.Yamamoto, T.Yoshida
    • Organizer
      Materials Research Society Spring Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-02
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] A new route for high rate and low temperature epitaxy by cluster assisted mesoplasma CVD (Invited)2009

    • Author(s)
      M.Kambara,J.M.A.Diaz,T.Yoshida
    • Organizer
      Thermec
    • Place of Presentation
      Berlin,Germany.
    • Year and Date
      2009-08-27
    • Data Source
      KAKENHI-PROJECT-21226017
  • [Presentation] Some issues of the plasma processing and characterization of nanocrystalline BN thin film(inbited)2008

    • Author(s)
      T. Yoshida
    • Organizer
      HTPP-10
    • Place of Presentation
      Patras Greece
    • Year and Date
      2008-07-07
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Some issues of the plasma2008

    • Author(s)
      T. Yoshida
    • Organizer
      processing and characterization of nanocrystalline BN thin film, HTPP-10
    • Place of Presentation
      Patras, Greece,
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] ICP-CVD法によるhBN薄膜堆積における結晶構造制御応物学会/春季2008

    • Author(s)
      十倉祐紀、神原淳、吉田豊信
    • Organizer
      27a-S-4
    • Place of Presentation
      東京
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Plasma processing of nano-crystalline seniconductive cBN thin filns (invited)2008

    • Author(s)
      T Yoshida
    • Organizer
      3^rd Int.School of Advanced Plasma Tech
    • Place of Presentation
      Varenna, Itaky
    • Year and Date
      2008-07-28
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Plasma processing of nano-crystalline semiconductive cBN thin films2008

    • Author(s)
      T. Yoshida
    • Organizer
      3^<rd> Int. School of Advanced Plasma Tech
    • Place of Presentation
      Varenna, Italy
    • Year and Date
      2008-07-30
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Some issues on the plasma sutface engineering for the last 20 years2007

    • Author(s)
      T, Yoshida
    • Organizer
      lntemational workshop on adv.thin films and surface tech.
    • Place of Presentation
      Shawwan
    • Year and Date
      2007-11-13
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] ZnドープcBN薄膜の電気伝導性に与えるB/N組成比の影響2007

    • Author(s)
      野瀬健二, 吉田豊信
    • Organizer
      第54回応用物理学会, I-498,27-p-M-12
    • Place of Presentation
      東京
    • Year and Date
      2007-03-27
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Processing and Characterization of nano-crystalline cBN films2007

    • Author(s)
      T, Yoshida
    • Organizer
      Doyama Sympo.
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-09-06
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] X-Ray Diffraction Study Of Cubic-and Hexagonal-Boron-Nitride Thin Films Grown byInductively-Coupled Plasma Enhanced Chemical Vapor Deposition2007

    • Author(s)
      K. Nakamura, S. Hirano, K. lnaba, K. Nose, T. Yoshida
    • Organizer
      18thInt.Symp.on Plasma Chem.
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-08-30
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Processing and Characterization of nano-crystalline cBN films2007

    • Author(s)
      T. Yoshida
    • Organizer
      Doyama Symposium,
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-02-06
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Toward a new era of plasma surface engineering2007

    • Author(s)
      T. Yoshida
    • Organizer
      AEPSE 2007
    • Place of Presentation
      Nagasaki
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] 位相制御RFバイアススパッタリングによる立方晶窒化ホウ素薄膜の堆積と電気伝導性制御2007

    • Author(s)
      野瀬健二, 吉田豊信
    • Organizer
      ニューダイヤモンドフォーラム
    • Place of Presentation
      東京
    • Year and Date
      2007-06-29
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] X-Ray DiffractionStudy of Cubic- andHexagonal-Boron-Nitride Thin FilmsGrown by Inductively-Coupled PlasmaEnhanced Chemical Vapor Deposition2007

    • Author(s)
      K. Nakamura, S. Hirano, K. Inaba, K. Nose, T. Yoshida
    • Organizer
      18^<th> Int. Symposium on Plasma Chem.
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-08-27
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Processing and Characterization of nano-crystalline cBN films2007

    • Author(s)
      T. Yoshida
    • Organizer
      台湾薄膜科学技術会議2007年会
    • Place of Presentation
      Taipei, Dec
    • Year and Date
      2007-12-22
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Semiconductingcubic boron nitride thin films preparedby in-situ sputter-doping,2007

    • Author(s)
      K. Nose, T. Yoshida
    • Organizer
      18^<th> Int. Symposium on Plasma Chem
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-08-30
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Semiconducting cubic boron nitride thin films prepared by in-situ sputter-doping2007

    • Author(s)
      K, Nose, T. Yoshida
    • Organizer
      18th lnt.Symp.on Plasma Chem.
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-08-28
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Some issues on the plasma surface engineering for the last 20 years2007

    • Author(s)
      T. Yoshida
    • Organizer
      International workshop on adv. thin films and surface tech
    • Place of Presentation
      Shawwan
    • Year and Date
      2007-11-13
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Processing and Characterization of nano-crystalline cBN films2007

    • Author(s)
      T. Yoshida
    • Organizer
      台湾薄膜科学技術会議2007年会
    • Place of Presentation
      Taipei
    • Year and Date
      2007-12-22
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] 時間依存バイアス法によるcBN核生成制御2006

    • Author(s)
      野瀬健二, 吉田豊信
    • Organizer
      応物学会/春季,22p-zp-13
    • Place of Presentation
      東京
    • Year and Date
      2006-03-22
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Vapor phase deposition of cBN thin films,Vapor phase deposition of cBN thin films2006

    • Author(s)
      T. Yoshida
    • Organizer
      Iketani-Conference
    • Place of Presentation
      Tokyo
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Preparation of High Conductive Cubic Boron Nitride Thin Films by in-situ Zinc Doping2006

    • Author(s)
      K. Nose, T. Yoshida
    • Organizer
      Materials Research Society Fall meeting
    • Year and Date
      2006-11-29
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] ICP-CVD法によるcBN核生成・成長に及ぼす動的ガス組成費の影響2006

    • Author(s)
      野瀬健二, 十倉祐紀, 中村圭輔, 吉田豊信
    • Organizer
      応物学会/秋季29p-X-9
    • Place of Presentation
      滋賀
    • Year and Date
      2006-08-29
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Boron ion implantation for direct cBN nucleation on Si2005

    • Author(s)
      K. Nakamura and T. Yoshida
    • Organizer
      The 5^<th> Asian-European International Conference on Plasma Surface Engineering, WeP509
    • Place of Presentation
      China
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Effects of Si impurity on the growth and nucleation of cubic boron nitride thinm films2005

    • Author(s)
      H. Oba, K. Nose and T. Yoshida
    • Organizer
      The 5th Asian-European International Conference on Plasma Surface Engineering, ThP509
    • Place of Presentation
      China
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Gallium Nitride in Court, Boron Nitride in Lab2005

    • Author(s)
      K. Nose, T. Yoshida
    • Organizer
      Tinsghua University- University of Tokyo Student Forum 2005
    • Place of Presentation
      Kyoto
    • Year and Date
      2005-09-26
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] スパッタおよびCVDによるcBN薄膜堆積と電気伝導特性評価2005

    • Author(s)
      野瀬健二, 吉田豊信
    • Organizer
      応物学会/秋季シンポジウム講演
    • Place of Presentation
      徳島(No9132, 8p-N-8)
    • Year and Date
      2005-09-08
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Non- ohmic conduction up to 770 K in BN thin films deposited by phase- regulated RF bias sputtering in an ultra- high vacuum ambient2005

    • Author(s)
      K. Nose, H. Oba, T. Yoshida
    • Organizer
      The 10th International Conference on New Diamond Science and Technology, 16-2
    • Place of Presentation
      Tsukuba
    • Year and Date
      2005-04-12
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Zinc-doped nano-crystalline boron nitride thin films with semiconducting properties2005

    • Author(s)
      K. Nose, H. Oba, T. Yoshida
    • Organizer
      The 3rd International symposium on Frontier of Nanochemistry and Nanomaterials
    • Place of Presentation
      Kyoto
    • Year and Date
      2005-10-01
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] cBN films2005

    • Author(s)
      T. Yoshida
    • Organizer
      UT Forum
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Electronic conduction in as-deposited nano-crystalline boron nitride thin films2004

    • Author(s)
      K. Nose, H. Oba and T. Yoshida
    • Organizer
      International conference of new diamond science and technology ICNDST-9
    • Place of Presentation
      Tokyo
    • Year and Date
      2004-03-26
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] The fabrication of n-type cBN thin films with sputter-doping of Si2004

    • Author(s)
      H. Oba, K. Nose, T. Yoshida
    • Organizer
      The 7th Asian-Pacific conference on Plasma Science Technology, 30P-9
    • Place of Presentation
      Fukuoka
    • Year and Date
      2004-06-30
    • Data Source
      KAKENHI-PROJECT-16106009
  • [Presentation] Plasma Surface Engineering2004

    • Author(s)
      Zarzar Matsushita, K. Nose, T. Yoshida
    • Organizer
      Garmisch
    • Place of Presentation
      Germany
    • Data Source
      KAKENHI-PROJECT-16106009
  • 1.  寺嶋 和夫 (30176911)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 0 results
  • 2.  SHIMPO Ryokichi (40154398)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 2 results
  • 3.  IKUHARA Yuuichi (70192474)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  KONDO Takashi (60205557)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 5.  KAMBARA Makoto (80359661)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 35 results
  • 6.  TANAKA Yasunori (90303263)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  SHIBUTA Yasushi (90401124)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 8.  SHIMADA Masahiko (80029701)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  KANAMARU Fumikazu (40029848)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  SOGA Naohiro (80026179)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  KOJIMA Hironao (90020346)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  WAKATSUKI Masao (50114153)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  YAMAMOTO Tsuyohisa (20220478)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  作田 忠裕 (80135318)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  河合 良信 (10038565)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  佐藤 徳芳 (40005252)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  酒井 洋輔 (20002199)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  橘 邦英 (40027925)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  後藤 俊夫 (50023255)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  山本 良一 (10107550)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 21.  明石 和夫 (00013095)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  津田 統 (10242041)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 23.  納富 啓
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  岩田 友夫
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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