Yamada Yoichi 山田陽一

… Alternative Names

YAMADA Yoichi 山田陽一

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Researcher Number	00251033
Other IDs
Affiliation (Current)	2025: 山口大学, 大学院創成科学研究科, 教授
Affiliation (based on the past Project Information) *help	2022 – 2025: 山口大学, 大学院創成科学研究科, 教授 2017 – 2020: 山口大学, 大学院創成科学研究科, 教授 2016: 山口大学, 創成科学研究科, 教授 2015: 山口大学, 大学院理工学研究科, 教授 2013 – 2015: 山口大学, 理工学研究科, 教授 … More 2010: 山口大学, 大学院・理工学研究科, 教授 2007 – 2009: Yamaguchi University, 大学院・理工学研究科, 准教授 2006: Yamaguchi University, Graduate School of Science and Engineering, Associate Professor, 大学院理工学研究科, 助教授 2004 – 2005: 山口大学, 工学部, 助教授 2000 – 2002: 山口大学, 工学部, 助教授 1997 – 1998: Yamaguchi University, Faculty of Engineering, Associate Professor, 工学部, 助教授 1995 – 1996: 山口大学, 工学部, 助手 1994: 筑波大学, 物理学系, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering / Basic Section 21050:Electric and electronic materials-related / Science and Engineering / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials / Basic Section 30010:Crystal engineering-related / Applied materials science/Crystal engineering / Electronic materials/Electric materials
Keywords	Principal Investigator 励起子分子 / 励起子 / 局在化 / 励起子工学 / 量子井戸 / 混晶半導体 / 窒化物半導体 / 光学利得 / biexciton / 低次元化 … More / 短波長半導体レーザ / 光物性 / 半導体物性 / exciton engineering / ZnS / optical gain / localization / exciton / low-dimensional structure / wide-gap semiconductor / 硫化亜鉛 / 誘導放出 / 低次元量子構造 / ワイドギャップ半導体 / 2光子吸収 / 結合エネルギー / 振動子強度 / 深紫外波長領域 / 局在 / 量子閉じ込め効果 / 2光子共鳴 / 非局在化 / 高温物性 / 非弾性散乱 / 局在系 / 励起子多体効果 / 内部量子効率 / 局在効果 / 低次元不均一系 / 混晶不均一系 / 結晶特異構造 / nitride-based semiconductor / two-photon absorption / Stokes shift / alloy semiconductor / 生成時間 / 局在時間 / 液晶半導体 / 窒化物系半導体 / ストークスシフト / locallization / radiative recombination / 輻射再結合 / stimulated emission / 低次元構造 / 格子歪 / 偏光特性 / 輻射再結合寿命 / 発光ダイナミクス / ボーイング / 混晶局在系 / 有効質量比 / 反射スペクトル / フォトルミネッセンス / 励起子ポラリトン / 分極パラメータ / 窒化アルミニウム / 低次元系 / 局在励起子 / ワイドギャップII-VI族化合物半導体 … More Except Principal Investigator 窒化物半導体 / ZnS / AlN / LED / AｌNテンプレート / 高温アニール / アニール / エピタキシャル成長 / 非極性面 / AlNテンプレート / 深紫外LED / AlGaN / White Light-emitting Diode / II-VI Compound Semiconductor / Color Rendering / Thin film phosphor / Crystal Growth / Semiconductor Optical Characterization / ドーピング / 等電子中心 / ZnSTe / 内部量子効率 / 有機金属化学気相法 / 蛍光体 / 白色LED / II-VI族化合物半導体 / 演色性 / 薄膜蛍光体 / 結晶成長 / 半導体光物性 / stimulated emission / self trapping / isoelectronic impurity / localization / exciton / moleclar beam epitaxy / alloy semiconductor / nitride semiconductor / ラジカル源 / マイクロ波プラズマ / ドナー束縛励起子 / RF放電 / 誘導放出 / 誘電放出 / 自己束縛 / 等電子不純物 / 局在化 / 励起子 / 分子線エピタキシ-法 / 混晶半導体 / biexciton / localized exciton / superlattice / quantum well / p-type conductivity control / UV laser diode / UV light-emitting diode / 励起子分子 / 局在励起子 / 超格子 / 量子井戸 / p型伝導制御 / 硫化亜鉛 / 紫外発光ダイオード / 紫外レーザダイオード / 研磨 / GaN基板 / 積層欠陥 / サファイア基板 / 転位 / HVPE / MOVPE / 半極性面 / GaN Less

AlGaN系深紫外半導体レーザの発振機構解明と励起子利得による超低しきい値化Principal Investigator
- Principal Investigator
  
  山田陽一
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Yamaguchi University
Non-polar growth of AlGaN nitride semiconductor and its application in deep ultraviolet LEDs
- Principal Investigator
  
  三宅秀人
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Mie University
Optical properties and functionalities of dense excitonic systems in singularity structuresPrincipal Investigator
- Principal Investigator
  
  Yamada Yoichi
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Yamaguchi University
Elucidation of fundamental optical properties of biexcitons in deep ultraviolet ternary alloy quantum wells and application to laser operationPrincipal Investigator
- Principal Investigator
  
  Yamada Yoichi
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
- Principal Investigator
  
  Tadatomo Kazuyuki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Optical functionality of dense excitonic systems in nitride-based deep-ultraviolet ternary alloy semiconductorsPrincipal Investigator
- Principal Investigator
  
  Yamada Yoichi
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
深紫外混晶半導体における高密度励起子系の光物性評価と光機能性Principal Investigator
- Principal Investigator
  
  山田陽一
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Yamaguchi University
窒化アルミニウム系深紫外半導体における高密度励起子系の光物性評価と光機能性Principal Investigator
- Principal Investigator
  
  山田陽一
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Yamaguchi University
Development of new phosphors for high Ra white LEDs in the next generation
- Principal Investigator
  
  TAGUCHI Tsunemasa
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Yamaguchi University
Control of biexciton localization and optical functionality in nitride-based ultraviolet alloy semiconductorsPrincipal Investigator
- Principal Investigator
  
  YAMADA Yoichi
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Control of biexciton localization and optical functionality in ZnMgCdS-based semiconductor quantum structuresPrincipal Investigator
- Principal Investigator
  
  YAMADA Yoichi
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Localization of biexcitons and mechanism of optical gain formation in semiconductor low-dimensional structuresPrincipal Investigator
- Principal Investigator
  
  YAMADA Yoichi
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
低次元系の励起子分子を利用した短波長量子井戸レーザの作製Principal Investigator
- Principal Investigator
  
  山田陽一
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Growth and excitonic properties of InGaN ternary alloy semiconductors
- Principal Investigator
  
  TAGUCHI Tsunemasa
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Growth of p-type ZnS and fabrication of superlattice-structured ultraviolet LED and LD
- Principal Investigator
  
  TAGUCHI Tsunemasa
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
II-VI族半導体量子井戸構造における光学利得の生成機構の解明Principal Investigator
- Principal Investigator
  
  山田陽一
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Tsukuba

[Journal Article] Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells2020
- Author(s)
  Murotani Hideaki、Miyoshi Hiroyuki、Takeda Ryohei、Nakao Hiroki、Ajmal Khan M.、Maeda Noritoshi、Jo Masafumi、Hirayama Hideki、Yamada Yoichi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 128 Issue: 10 Pages: 105704-105704
- DOI
  10.1063/5.0015554
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04585, KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428
[Journal Article] High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells2020
- Author(s)
  Murotani Hideaki、Tanabe Ryohei、Hisanaga Keisuke、Hamada Akira、Beppu Kanta、Maeda Noritoshi、Khan M. Ajmal、Jo Masafumi、Hirayama Hideki、Yamada Yoichi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 16 Pages: 162106-162106
- DOI
  10.1063/5.0027697
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04585, KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428
[Journal Article] External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs2020
- Author(s)
  Khan M. Ajmal、Itokazu Yuri、Maeda Noritoshi、Jo Masafumi、Yamada Yoichi、Hirayama Hideki
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 2 Issue: 7 Pages: 1892-1907
- DOI
  10.1021/acsaelm.0c00172
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428
[Journal Article] Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED2020
- Author(s)
  Khan M. Ajmal、Takeda Ryohei、Yamada Yoichi、Maeda Noritoshi、Jo Masafumi、Hirayama Hideki
- Journal Title
  
  Optics Letters
  
  Volume: 45 Issue: 2 Pages: 495-498
- DOI
  10.1364/ol.376894
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06428, KAKENHI-PLANNED-16H06420
[Journal Article] 13 mW operation of a 295?310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications2019
- Author(s)
  Khan M. Ajmal、Maeda Noritoshi、Jo Masafumi、Akamatsu Yuki、Tanabe Ryohei、Yamada Yoichi、Hirayama Hideki
- Journal Title
  
  Journal of Materials Chemistry C
  
  Volume: 7 Issue: 1 Pages: 143-152
- DOI
  10.1039/c8tc03825b
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428
[Journal Article] Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination2019
- Author(s)
  Murotani Hideaki、Shibuya Kazunori、Yoneda Ayumu、Hashiguchi Yuki、Miyoshi Hiroyuki、Kurai Satoshi、Okada Narihito、Tadatomo Kazuyuki、Yano Yoshiki、Tabuchi Toshiya、Matsumoto Koh、Yamada Yoichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCB02-SCCB02
- DOI
  10.7567/1347-4065/ab040b
- NAID
  210000155631
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06428
[Journal Article] Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layers with different In compositions2019
- Author(s)
  Satoshi Kurai, Ayumu Wakamatsu, Yoichi Yamada
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCB13-SCCB13
- DOI
  10.7567/1347-4065/ab0cfb
- NAID
  210000155949
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04490, KAKENHI-PLANNED-16H06428
[Journal Article] Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer2018
- Author(s)
  Sugimoto Kohei、Okada Narihito、Kurai Satoshi、Yamada Yoichi、Tadatomo Kazuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 6 Pages: 062101-062101
- DOI
  10.7567/jjap.57.062101
- NAID
  210000149112
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16K06264, KAKENHI-PROJECT-16K17514
[Journal Article] Temperature dependence of excitonic transitions in Al0. 60Ga0. 40N/Al0. 70Ga0. 30N multiple quantum wells from 4 to 750 K2018
- Author(s)
  H. Murotani, Y. Hayakawa, K. Ikeda, H. Miyake, K. Hiramtsu, Y. Yamada
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 20 Pages: 205705-205705
- DOI
  10.1063/1.5023996
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335
[Journal Article] Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells2018
- Author(s)
  S. Kurai, N. Imura, L. Jin, H. Miyake, K. Hiramatsu, Y. Yamada
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 6 Pages: 60311-60311
- DOI
  10.7567/jjap.57.060311
- NAID
  210000149104
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335, KAKENHI-PROJECT-16K06264
[Journal Article] Temperature dependence of Stokes shifts of excitons and biexcitons in Al0.61Ga0.39N epitaxial layer2018
- Author(s)
  H. Murotani, K. Ikeda, T. Tsurumaru, R. Fujiwara, S. Kurai, H. Miyake, K. Hiramatsu, and Y. Yamada
- Journal Title
  
  Physica Status Solidi B
  
  Volume: - Issue: 5 Pages: 1700374-1700374
- DOI
  10.1002/pssb.201700374
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335, KAKENHI-PLANNED-16H06415
[Journal Article] Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers2018
- Author(s)
  Kurai Satoshi、Okawa Kohei、Makio Ryoga、Nobata Genki、Gao Junji、Sugimoto Kohei、Okada Narihito、Tadatomo Kazuyuki、Yamada Yoichi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 124 Issue: 8
- DOI
  10.1063/1.5043578
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16K06264
[Journal Article] Effects of saturation of nonradiative recombination centers on internal quantum efficiency in InGaN light-emitting diodes2018
- Author(s)
  Murotani Hideaki、Yamada Yoichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 1 Pages: 011003-011003
- DOI
  10.7567/1347-4065/aaec8e
- NAID
  210000135243
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06428
[Journal Article] Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells2017
- Author(s)
  Nakamura, K; Fukuno, T; Miyake, H; Hiramatsu, K; Yamada, Y
- Journal Title
  
  APPLIED PHYSICS EXPRESS
  
  Volume: 10 Issue: 5 Pages: 51003-51003
- DOI
  10.7567/apex.10.051003
- NAID
  210000135831
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335
[Journal Article] Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements2017
- Author(s)
  Satoshi Kurai, Shota Higaki, Nobuto Imura, Kohei Okawa, Ryoga Makio, Narihito Okada, Kazuyuki Tadatomo, and Yoichi Yamada
- Journal Title
  
  Physica Status Solidi B
  
  Volume: - Issue: 5
- DOI
  10.1002/pssb.201700358
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06264, KAKENHI-PLANNED-16H06428
[Journal Article] Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near-Field Optical Microscopy2017
- Author(s)
  Satoshi Kurai, Renma Mihara, Genki Nobata, Kohei Okawa, Narihito Okada, Kazuyuki Tadatomo, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, and Yoichi Yamada
- Journal Title
  
  Physica Status Solidi B
  
  Volume: - Issue: 5
- DOI
  10.1002/pssb.201700322
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06264, KAKENHI-PLANNED-16H06428
[Journal Article] High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells2017
- Author(s)
  H. Murotani, K. Nakamura, T. Fukuno, H. Miyake, K. Hiramatsu, and Y. Yamada
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 2 Pages: 21002-21002
- DOI
  10.7567/apex.10.021002
- NAID
  210000135746
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335, KAKENHI-PLANNED-16H06415
[Journal Article] Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations2016
- Author(s)
  Satoshi Kurai, Hideto Miyake, Kazumasa Hiramatsu, and Yoichi Yamada
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 119 Issue: 2 Pages: 25-707
- DOI
  10.1063/1.4939864
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420288, KAKENHI-PROJECT-25420289, KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-16H06415
[Journal Article] Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes2015
- Author(s)
  N. Okada, H. Kashihara, K. Sugimoto, Y. Yamada, and K. Tadatomo
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 117 Issue: 2
- DOI
  10.1063/1.4905914
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420289
[Journal Article] Binding energy of localized biexcitons in AlGaN-based quantum wells2014
- Author(s)
  Y.Hayakawa, T.Fukuno, K.Nakamura, H.Miyake, K.Hiramatsu, Y.Yamada
- Journal Title
  
  APPLIED PHYSICS EXPRESS
  
  Volume: 7 Issue: 12 Pages: 122101-122101
- DOI
  10.7567/apex.7.122101
- NAID
  210000137325
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420289
[Journal Article] Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency2014
- Author(s)
  S.Kurai, K.Anai, H.Miyake, K.Hiramatsu, Y.Yamada
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 116 Issue: 23 Pages: 235703-235703
- DOI
  10.1063/1.4904847
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420288, KAKENHI-PROJECT-25420289
[Journal Article] Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration2013
- Author(s)
  S. Kurai, F. Ushijima, H. Miyake, K. Hiramatsu, Y. Yamada
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 115 Issue: 5 Pages: 53509-53509
- DOI
  10.1063/1.4864020
- NAID
  120006364143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420288, KAKENHI-PROJECT-25420289
[Journal Article] Spatially separated intrinsic emission components in InGaN ternary alloys2009
- Author(s)
  Yoichi Yamada, et al.
- Journal Title
  
  Physical Review B 80(19)
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016005
[Journal Article] Photoluminescence from highly-excited AIN epitaxial layers2008
- Author(s)
  Yoichi Yamada, et.al.
- Journal Title
  
  Applied Physics Letters 92(13)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032007
[Journal Article] Population dynamics of localized biexcitons in Al_xGa_1xN ternary alloys2007
- Author(s)
  Yoichi Yamada, et. al.
- Journal Title
  
  Applied Physics Letters 91(19)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032007
[Journal Article] Population dynamics of biexcitons and single excitons in AlGaN ternary alloys2006
- Author(s)
  Yoichi Yamada
- Journal Title
  
  28th International Conference on the Physics of Semiconductors
  
  Pages: 313-313
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Population dynamics of biexcitons and single excitons in AlGaN ternary alloys2006
- Author(s)
  Y.Yamada et al.
- Journal Title
  
  28th International Conference on the Physics of Semiconductors
  
  Pages: 313-313
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Recombination dynamics of localized biexcitons in A1GaN ternary alloys2005
- Author(s)
  Y.Yamada
- Journal Title
  
  Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX Vol.5725
  
  Pages: 110-118
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Recombination dynamics of localized biexcitons in AlGaN ternary alloys2005
- Author(s)
  Yoichi Yamada
- Journal Title
  
  Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX 5725
  
  Pages: 110-118
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Stokes shift of biexcitons in Al_xGa_<1-x>N epitaxial layers2004
- Author(s)
  Y.Yamada et al.
- Journal Title
  
  Physical Review B Vol.70, No.19
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Biexcitons in GaN and AlGaN epitaxial layers2004
- Author(s)
  Yoichi Yamada
- Journal Title
  
  Proceedings of the International Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics 2004-06
  
  Pages: 326-340
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Time-resolved nonlinear luminescence of excitonic transitions in GaN2004
- Author(s)
  Y.Yamada et al.
- Journal Title
  
  Journal of Applied Physics Vol.96, No.1
  
  Pages: 138-143
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Biexcitons in GaN and AlGaN epitaxial layers2004
- Author(s)
  Y.Yamada
- Journal Title
  
  Proceedings of the International Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics Vol.2004-06
  
  Pages: 326-340
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Time-resolved nonlinear luminescence of excitonic transitions in GaN2004
- Author(s)
  Yoichi Yamada
- Journal Title
  
  Journal of Applied Physics 96・1
  
  Pages: 138-143
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Stokes shift of biexcitons in Al_xGa_<1-x>N epitaxial layers2004
- Author(s)
  Yoichi Yamada
- Journal Title
  
  Physical Review B 70・19
- Data Source
  KAKENHI-PROJECT-16560274
[Journal Article] Stokes shift of biexcitons in AlxGa1-xN epitaxial layers2004
- Author(s)
  Yoichi Yamada
- Journal Title
  
  Physical Review B 70・19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560274
[Presentation] Face-to-faceアニール処理されたスパッタ成膜AlNテンプレート上AlGaN系多重量子井戸構造の内部量子効率2021
- Author(s)
  藤井厚志　押村遼太　草場崇史　倉井聡　室谷英彰　上杉謙次郎　三宅秀人　山田陽一
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 完全緩和した{11-22}InGaN下地層上の多重量子井戸の発光特性2021
- Author(s)
  俵迫湧也　河村澪　西直矢　原田裕也　ヌルファラナジハマザラン　岡田成仁　倉井聡　山田陽一　只友一行
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Excitonic stimulated emission from AlGaN-based multiple quantum wells2021
- Author(s)
  R. Tanabe, K. Hisanaga, A. Hamada, K. Beppu, H. Murotani, N. Maeda, M. Ajmal Khan, M. Jo, H. Hirayama, and Y. Yamada
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系UV-C多重量子井戸構造における誘導放出のしきい励起パワー密度の温度依存性2021
- Author(s)
  濱田晟　福田拓矢　倉井聡　室谷英彰　前田哲利　M. Ajmal Khan　定昌史　平山秀樹　山田陽一
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 極小ピットを介したAlNテンプレートの高品質化2021
- Author(s)
  奥野椋　日高遼太　斎藤貴大　岡田成仁　前田哲利　定昌史　平山秀樹　倉井聡　山田陽一　只友一行
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Off-cut angle dependence of internal quantum efficiency in AlGaN multiple quantum wells on face-to-face annealed sputter-deposited AlN templates2021
- Author(s)
  S. Kurai, A. Fujii, R. Oshimura, Y. Akamatsu, F. Nakatani, K. Uesugi, H. Miyake, and Y. Yamada
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Optically pumped excitonic lasing in AlGaN-based UV-C multiple quantum wells2021
- Author(s)
  H. Murotani, H. Hirayama, and Y. Yamada
- Organizer
  Virtual Workshop on Material Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Exciton recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells2021
- Author(s)
  H. Murotani, H. Miyoshi, R. Takeda, H. Nakao, M. Ajmal Khan, N. Maeda, M. Jo, H. Hirayama, and Y. Yamada
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN量子井戸構造における励起子の発光・非発光ダイナミクスと深紫外誘導放出2020
- Author(s)
  室谷英彰　山田陽一
- Organizer
  応用物理学会応用電子物性分科会研究例会　紫外材料・デバイス開発の最前線～物性の理解とデバイス開発～
- Invited
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系多重量子井戸構造における励起子の輻射・非輻射再結合レートの励起強度依存性2020
- Author(s)
  三好博之　武田椋平　中生拓希　倉井聡　室谷英彰　M. Ajmal Khan　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] InGaN下地層がInGaN/GaN量子井戸の発光強度に与える影響2020
- Author(s)
  河村澪　岩崎直矢　猪俣祐貴　岡田成仁　倉井聡　山田陽一　只友一行
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 中温成長GaNピット形成層上のInGaN単一量子井戸構造におけるポテンシャル障壁評価2020
- Author(s)
  倉井聡　高俊吉　槇尾凌我　林直矢　湯浅翔太　岡田成仁　只友一行　山田陽一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] アニール処理されたスパッタAlNテンプレート上AlGaN多重量子井戸における内部量子効率のc面サファイアm軸オフ角依存性2020
- Author(s)
  押村遼太　赤松勇紀　藤井厚志　倉井聡　室谷英彰　上杉謙次郎　三宅秀人　山田陽一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 高温アニールした微傾斜サファイア基板上スパッタ成膜AlNテンプレートに成長されたAlGaN多重量子井戸内部量子効率評価2020
- Author(s)
  押村遼太　藤井厚志　中谷文哉　倉井聡　室谷英彰　上杉謙次郎　三宅秀人　山田陽一
- Organizer
  2020年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 緑色InGaN量子井戸構造における発光効率曲線解析と輻射・非輻射再結合ダイナミクスの相関2020
- Author(s)
  中津留圭吾　橋口勇樹　室谷英彰　倉井聡　岡田成仁　只友一行　矢野良樹　小関修一　松本功　山田陽一
- Organizer
  2020年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 中温成長GaN層をピット形成層に用いたInGaN単一量子井戸構造におけるポテンシャル障壁高さのピット形成層厚依存性2020
- Author(s)
  湯浅翔太　高俊吉　槇尾凌我　林直矢　倉井聡　岡田成仁　只友一行　山田陽一
- Organizer
  2020年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系UV-A多重量子井戸構造における内部量子効率と励起子の輻射再結合ダイナミクスの励起強度依存性2020
- Author(s)
  室谷英彰　三好博之　武田椋平　中生拓希　倉井聡　M. Ajmal Khan　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系多重量子井戸構造における励起子レート方程式モデルによる効率Droop現象の解析2020
- Author(s)
  室谷英彰　三好博之　武田椋平　中生拓希　倉井聡　M. Ajmal Khan　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系UV-C多重量子井戸構造の内部量子効率と励起子系誘導放出特性2020
- Author(s)
  室谷英彰　田邉凌平　久永桂典　濱田晟　別府寛太　前田哲利　M. Ajmal Khan　定昌史　平山秀樹　山田陽一
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 緩和した厚膜InGaN上の長波長MQWの作製と評価2020
- Author(s)
  岩崎直矢　猪俣祐貴　河村澪　岡田成仁　倉井聡　山田陽一　只友一行
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] UV-A帯AlGaN量子井戸構造における内部量子効率と輻射・非輻射再結合ダイナミクス2020
- Author(s)
  中生拓希　三好博之　武田椋平　室谷英彰　倉井聡　M. Ajmal Khan　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  2020年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系UV-C多重量子井戸構造における室温誘導放出と縦共振器モードの観測2020
- Author(s)
  田邉凌平　濱田晟　別府寛太　倉井聡　室谷英彰　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 中温GaN層上InGaN多重量子井戸構造におけるVピット近傍のポテンシャル障壁の顕微分光評価(2)2019
- Author(s)
  倉井聡　大川康平　槇尾凌我　高俊吉　林直矢　岡田成仁　只友一行　山田陽一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系量子井戸構造における励起子レート方程式モデルによる効率曲線の解析(2)2019
- Author(s)
  室谷英彰　三好博之　武田椋平　中生拓希　倉井聡　M. Ajmal Khan　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN量子井戸構造における深紫外誘導放出の温度依存性2019
- Author(s)
  田邉凌平　久永桂典　濱田晟　別府寛太　倉井聡　室谷英彰　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系量子井戸構造における励起子発光線幅に対する混晶組成揺らぎおよび界面揺らぎの影響2019
- Author(s)
  野坂峻大　室谷英彰　山田陽一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] 緑色InGaN系量子井戸構造における内部量子効率曲線のフィッティング解析2019
- Author(s)
  橋口勇樹　永見祐二　中津留圭吾　倉井聡　岡田成仁　只友一行　室谷英彰　矢野良樹田渕俊也　松本功　山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN多重量子井戸構造における内部量子効率の井戸幅および障壁層Al組成比依存性2019
- Author(s)
  赤松勇紀　藤井厚志　倉井聡　室谷英彰　三宅秀人　山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] UV-C帯AlGaN量子井戸構造における光励起誘導放出特性2019
- Author(s)
  濱田晟　田邉凌平　別府寛太　室谷英彰　倉井聡　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  2019年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Achievement of internal quantum efficiency up to 53 % at 326 nm-UVA emission from AlGaN QWs with engineering of highly relaxed buffer layer2019
- Author(s)
  M. Ajmal Khan, R. Takeda, H. Miyoshi, Y. Yamada, S. Fujikawa, N. Maeda, M. Jo, and H. Hirayama
- Organizer
  4th International Workshop on Ultraviolet Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Height of potential barrier formed around V-pits in InGaN/GaN quantum wells on moderate-temperature GaN layer2019
- Author(s)
  S. Kurai, K. Okawa, R. Makio, J. Gao, G. Nobata, N. Hayashi, K. Sugimoto, N. Okada, K. Tadatomo, and Y. Yamada
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] InGaN系多重量子井戸構造におけるVピット近傍ポテンシャル障壁高さの中温GaN層厚依存性2019
- Author(s)
  林直矢　槇尾凌我　高俊吉　湯浅翔太　倉井聡　岡田成人　只友一行　山田陽一
- Organizer
  2019年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN多重量子井戸構造における転位近傍の局所的高エネルギー発光の顕微分光評価2019
- Author(s)
  LI JIN　中谷文哉　平山舜　倉井聡　三宅秀人　山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系量子井戸構造における励起子レート方程式モデルによる効率曲線の解析2019
- Author(s)
  三好博之　武田椋平　中生拓希　倉井聡　室谷英彰　M. Ajmal Khan　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Radiative and nonradiative recombination rates of excitons and their effects on internal quantum efficiency of AlGaN-based UV-B MQWs2019
- Author(s)
  H. Murotani, H. Miyoshi, R. Takeda, M. A. Khan, N. Maeda, M. Jo, H. Hirayama, and Y. Yamada
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Role of exciton recombination processes on internal quantum efficiency in AlGaN-based UV-B multiple quantum wells2019
- Author(s)
  H. Murotani, H. Miyoshi, R. Takeda, M. A. Khan, N. Maeda, M. Jo, H. Hirayama, and Y. Yamada
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 量子井戸構造の成長条件が異なる緑色InGaN量子井戸構造における近接場光学顕微分光測定2019
- Author(s)
  槇尾凌我　高俊吉　林直矢　湯浅翔太　倉井聡　岡田成仁　只友一行　矢野良樹　田渕俊也　松本功　山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 近接場光学顕微分光法によるInGaN量子井戸構造におけるVピット近傍の特異構造PLマッピング2019
- Author(s)
  倉井聡　岡田成仁　只友一行　山田陽一
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系量子井戸構造における内部量子効率の構造パラメータ依存性2019
- Author(s)
  藤井厚志　赤松勇紀　倉井聡　三宅秀人　山田陽一
- Organizer
  2019年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] UV-B帯AlGaN系量子井戸構造におけるレート方程式を用いた発光効率曲線解析と発光ダイナミクスの相関2019
- Author(s)
  武田椋平　三好博之　中生拓希　室谷英彰　倉井聡　M. A. Khan　前田哲利　定昌史　平山秀樹　山田陽一
- Organizer
  2019年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系量子井戸構造における励起子発光線幅に対する混晶組成揺らぎおよび界面揺らぎの影響2019
- Author(s)
  野坂峻大　室谷英彰　山田陽一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Optically pumped stimulated emission from AlGaN-based UV-C multiple quantum wells with high internal quantum efficiency of 16 % at 750 K2019
- Author(s)
  H. Murotani, K. Hisanaga, R. Tanabe, A. Hamada, N. Maeda, M. Jo, H. Hirayama, and Y. Yamada
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN系量子井戸構造における局所的高エネルギー発光の構造パラメータ依存性2019
- Author(s)
  中谷文哉　LI JIN　平山舜　倉井聡　三宅秀人　山田陽一
- Organizer
  2019年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Spatially resolved cathodoluminescence on dot-like high-energy emissions near threading dislocations in AlGaN multiple quantum wells2018
- Author(s)
  S. Kurai, N. Imura, L. Jin, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN量子井戸構造の高温領域における発光特性2018
- Author(s)
  赤松勇紀　池田和貴　藤原涼太　久永桂典　田邉凌平　室谷英彰　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 緑色InGaN系多重量子井戸構造における励起子レート方程式モデルによる効率曲線の解析2018
- Author(s)
  渋谷和憲　室谷英彰　米田歩　橋口勇樹　三好博之　倉井聡　岡田成仁　只友一行　矢野良樹　田渕俊也　松本功　山田陽一
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 中温GaN層上InGaN多重量子井戸構造におけるVピット近傍のポテンシャル障壁の顕微分光評価2018
- Author(s)
  倉井聡　大川康平　槇尾凌我　高俊吉　野畑元喜　岡田成仁　只友一行　山田陽一
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Analysis of efficiency curves of near-UV, blue, and green emitting InGaN multiple quantum wells using rate equations of exciton recombination2018
- Author(s)
  H. Murotani, K. Shibuya, A. Yoneda, Y. Hashiguchi, H. Miyoshi, S. Kurai, N. Okada, K. Tadatomo, Y. Yano, T. Tabuchi, K. Matsumoto, and Y. Yamada
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 近接場光学顕微分光法による緑色発光InGaN量子井戸構造における高エネルギー発光成分のエネルギー分割評価2018
- Author(s)
  高俊吉　野畑元喜　大川康平　槇尾凌我　倉井聡　岡田成仁　只友一行　矢野良樹　田渕俊也　松本功　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 転位密度が異なるAlGaN量子井戸構造における内部量子効率のSi添加量依存性2018
- Author(s)
  田邉凌平　池田和貴　久永桂典　藤原涼太　赤松勇紀　室谷英彰　倉井聡　岡田成仁　只友一行　三嶋晃　矢野良樹　田渕俊也　松本功　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] 近接場光学顕微分光法による中温GaN上InGaN量子井戸構造におけるピット近傍のポテンシャル障壁2018
- Author(s)
  槇尾凌我　大川康平　高俊吉　野畑元喜　倉井聡　岡田成仁　只友一行　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] カソードルミネッセンス法によるAlGaN多重量子井戸構造の転位近傍の局所発光2018
- Author(s)
  倉井聡　井村暢杜　Li Jin　三宅秀人　平松和政　山田陽一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] カソードルミネッセンス法によるAlGaN多重量子井戸構造の転位近傍の局所発光2018
- Author(s)
  倉井聡　井村暢杜　Li Jin　三宅秀人　平松和政　山田陽一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] AlGaN量子井戸構造の高温領域における発光特性2018
- Author(s)
  赤松勇紀　池田和貴　藤原涼太　久永桂典　田邉凌平　室谷英彰　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] InGaN系青色LED構造における効率曲線の励起子レート方程式モデルによる解析2018
- Author(s)
  渋谷和憲　米田歩　橋口勇樹　三好博之　倉井聡　室谷英彰　岡田成仁　只友一行　山田陽一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] カソードルミネッセンスマッピング法によるAlGaN量子井戸構造の局所発光評価2018
- Author(s)
  LI JIN　井村暢杜　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] p型化アニール処理がInGaN量子井戸構造の内部量子効率に与える影響2018
- Author(s)
  三好博之　米田歩　渋谷和憲　橋口勇樹　室谷英彰　倉井聡　岡田成仁　只友一行　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 効率曲線のフィッティング解析によるInGaN量子井戸構造の内部量子効率評価2018
- Author(s)
  橋口勇樹　渋谷和憲　米田歩　三好博之　室谷英彰　倉井聡　岡田成仁　只友一行　矢野良樹　田渕俊也　松本功　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layers with different In composition2018
- Author(s)
  S. Kurai, A. Wakamatsu, and Y. Yamada
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] カソードルミネッセンスマッピング法によるAlGaN量子井戸構造の局所発光評価2018
- Author(s)
  LI JIN　井村暢杜　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 転位密度が異なるAlGaN量子井戸構造における内部量子効率のSi添加量依存性2018
- Author(s)
  田邉凌平　池田和貴　久永桂典　藤原涼太　赤松勇紀　室谷英彰　倉井聡　岡田成仁　只友一行　三嶋晃　矢野良樹　田渕俊也　松本功　山田陽一
- Organizer
  2018年度応用物理学会中国四国支部学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Spatially resolved cathodoluminescence on dot-like high-energy emissions near threading dislocations in AlGaN multiple quantum wells2018
- Author(s)
  S. Kurai, N. Imura, L. Jin, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] Temperature dependence of Stokes shift of excitons and biexcitons in Al0.61Ga0.39N epitaxial layers2017
- Author(s)
  H. Murotani, K. Ikeda, T. Tsurumaru, R. Fujiwara, S. Kurai, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] AlGaN系量子井戸構造における励起子系発光特性の温度依存性2017
- Author(s)
  早川裕也　室谷英彰　三宅秀人　平松和政　山田陽一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] Localization-enhanced biexciton binding in Ga-rich InGaN and AlGaN epitaxial layers2017
- Author(s)
  K. Umezawa, E. Kobayashi, H. Murotani, S. Kurai, and Y. Yamada
- Organizer
  12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] AlGaN系量子井戸構造における励起子系発光特性の温度依存性2017
- Author(s)
  早川裕也　室谷英彰　三宅秀人　平松和政　山田陽一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Deep UV spectroscopy of dense excitons in AlGaN-based quantum wells2017
- Author(s)
  Y. Yamada
- Organizer
  International Workshop on UV Materials and Devices 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN混晶半導体の励起子光物性と光機能性2017
- Author(s)
  山田陽一
- Organizer
  日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第102回研究会・光電相互変換第125委員会第235回研究会
- Place of Presentation
  上智大学（東京都千代田区）
- Year and Date
  2017-03-02
- Invited
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Temperature dependence of excitonic transitions in deep ultraviolet emitting AlGaN multiple quantum wells2017
- Author(s)
  H. Murotani, Y. Hayakawa, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 窒化物不均一系における励起子多体効果とその光機能性2017
- Author(s)
  山田陽一　倉井聡　室谷英彰
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2017-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] Effects of saturation of nonradiative recombination centers on internal quantum efficiency in InGaN-based light-emitting diodes2017
- Author(s)
  H. Murotani and Y. Yamada
- Organizer
  12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Localization-enhanced biexciton binding in Ga-rich InGaN and AlGaN epitaxial layers2017
- Author(s)
  K. Umezawa, E. Kobayashi, H. Murotani, S. Kurai, and Y. Yamada
- Organizer
  12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN混晶半導体の励起子光物性と光機能性2017
- Author(s)
  山田陽一
- Organizer
  日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第102回研究会・光電相互変換第125委員会第235回研究会
- Place of Presentation
  上智大学（東京都千代田区）
- Year and Date
  2017-03-02
- Invited
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] Potential barrier formed around dislocations in InGaN quantum well structures by spot cathodoluminescence measurements2017
- Author(s)
  S. Kurai, S. Higaki, N. Okada, K. Tadatomo, and Y. Yamada
- Organizer
  12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 近接場光学顕微分光測定による緑色発光InGaN量子井戸構造の高エネルギー発光成分の評価(2)2017
- Author(s)
  倉井聡　三原練磨　野畑元喜　大川康平　槇尾凌我　岡田成仁　只友一行　矢野良樹　田渕俊也　松本功　山田陽一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Temperature dependence of Stokes shift of excitons and biexcitons in Al0.61Ga0.39N epitaxial layers2017
- Author(s)
  H. Murotani, K. Ikeda, T. Tsurumaru, R. Fujiwara, S. Kurai, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Temperature dependence of excitonic transitions in deep ultraviolet emitting AlGaN multiple quantum wells2017
- Author(s)
  H. Murotani, Y. Hayakawa, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] InGaN混晶薄膜からの励起子分子発光2017
- Author(s)
  梅澤恭平　小林英治　倉井聡　室谷英彰　山田陽一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Deep UV spectroscopy of dense excitons in AlGaN-based quantum wells2017
- Author(s)
  Y. Yamada
- Organizer
  International Workshop on UV Materials and Devices 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] InGaN系LED構造における非輻射再結合中心充填過程の転位密度依存性2017
- Author(s)
  室谷英彰　山田陽一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 窒化物不均一系における励起子多体効果とその光機能性2017
- Author(s)
  山田陽一　倉井聡　室谷英彰
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2017-03-14
- Invited
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] 局所カソードルミネッセンスによるInGaN量子井戸構造のポテンシャル障壁評価2017
- Author(s)
  倉井聡　檜垣翔大　岡田成仁　只友一行　山田陽一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Spatial resolved spectroscopy of blue and green InGaN quantum wells by scanning near-field optical microscopy2017
- Author(s)
  S. Kurai, R. Mihara, G. Nobata, K. Okawa, N. Okada, K. Tadatomo, Y. Yano, T. Tabuchi, K. Matsumoto, and Y. Yamada
- Organizer
  12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN量子井戸構造における励起子分子の結合エネルギー―混晶障壁層の組成比依存性―2016
- Author(s)
  和泉平　福地駿平　中村豪仁　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] Al0.61Ga0.39N混晶薄膜における励起子および励起子分子のストークスシフトの温度依存性2016
- Author(s)
  池田和貴　室谷英彰　鶴丸拓斗　藤原涼太　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells2016
- Author(s)
  T. Izumi, S. Fukuchi, N. Imura, H. Murotani, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando (USA)
- Year and Date
  2016-10-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] AlGaN量子井戸構造における励起子分子の結合エネルギー―混晶障壁層の組成比依存性(2)―2016
- Author(s)
  和泉平　福地駿平　井村暢杜　倉井聡　室谷英彰　三宅秀人　平松和政　山田陽一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PROJECT-16H04335
[Presentation] 近接場光学顕微分光測定による青色・緑色発光InGaN量子井戸構造の評価2016
- Author(s)
  倉井聡　三原練磨　野畑元喜　大川康平　岡田成仁　只友一行　矢野良樹　田渕俊也　松本功　山田陽一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] AlGaN量子井戸構造における励起子分子の結合エネルギー―混晶障壁層の組成比依存性(2)―2016
- Author(s)
  和泉平　福地駿平　井村暢杜　倉井聡　室谷英彰　三宅秀人　平松和政　山田陽一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Al0.61Ga0.39N混晶薄膜における励起子および励起子分子のストークスシフトの温度依存性2016
- Author(s)
  池田和貴　室谷英彰　鶴丸拓斗　藤原涼太　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells2016
- Author(s)
  T. Izumi, S. Fukuchi, N. Imura, H. Murotani, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando (USA)
- Year and Date
  2016-10-06
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06428
[Presentation] Binding of quasi-two-dimensional biexcitons in AlGaN quantum wells2015
- Author(s)
  K. Nakamura, T. Izumi, S. Fukuchi, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] AlGaN量子井戸における励起子分子結合エネルギーの井戸幅依存性(2)2015
- Author(s)
  中村豪仁　和泉平　福地駿平　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] AlGaN量子井戸における励起子分子結合エネルギーの井戸幅依存性2015
- Author(s)
  福野智規　中村豪仁　和泉平　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] Dense excitonic properties of AlGaN-based quantum wells2015
- Author(s)
  Y. Yamada, T. Fukuno, K. Nakamura, T. Izumi, H. Miyake, and K. Hiramatsu
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices (2015 German-Japanese-Spanish Joint Workshop)
- Place of Presentation
  京都大学芝蘭会館（京都市）
- Year and Date
  2015-07-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] Si濃度の異なるAl0.61Ga0.39N混晶薄膜のカソードルミネッセンス法による局所スペクトル評価2014
- Author(s)
  倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] Inelastic exciton and biexciton scattering in AlGaN-based quantum wells2014
- Author(s)
  Y. Yamada, Y. Hayakawa, T. Fukuno, K. Nakamura, H. Miyake, and K. Hiramatsu
- Organizer
  32nd International Conference on the Physics of Semiconductors
- Place of Presentation
  Austin, USA
- Year and Date
  2014-08-14
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] Photoluminescence due to inelastic scattering of excitons and biexcitons in AlGaN-based quantum wells up to 750 K2014
- Author(s)
  Y. Hayakawa, T. Fukuno, K. Nakamura, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] AlGaN混晶薄膜の高温PLE測定2014
- Author(s)
  中尾文哉　長坂智幸　鶴丸拓斗　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] 混晶局在系における励起子多体効果2014
- Author(s)
  山田陽一
- Organizer
  第75回応用物理学会秋季学術講演会「窒化物半導体特異構造の科学～物性評価と結晶学の構築へ～」シンポジウム
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-19
- Invited
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] AlGaN系量子井戸構造の高温PLE測定2014
- Author(s)
  福野智規　中村豪仁　和泉平　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] Bowing of biexciton binding in Al_xGa_<1-x>N ternary alloys2011
- Author(s)
  Yoichi Yamada
- Organizer
  International Symposium on SPIE OPTO : Optoelectronic Materials, Devices and Applications
- Place of Presentation
  San Francisco (USA)
- Year and Date
  2011-01-25
- Data Source
  KAKENHI-PUBLICLY-21016005
[Presentation] AlGaN混晶薄膜の励起子系光物性2010
- Author(s)
  山田陽一
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PUBLICLY-21016005
[Presentation] Free-and bound-biexciton luminescence from AlN epitaxial layers2008
- Author(s)
  Yoichi Yamada, et.al.
- Organizer
  The 8th International Conference on Excitonic Processes in Condensed Matter
- Place of Presentation
  Kyoto (Japan)
- Year and Date
  2008-06-24
- Data Source
  KAKENHI-PROJECT-19032007
[Presentation] AlGaN混晶局在系の励起子光物性
- Author(s)
  山田陽一
- Organizer
  日本学術振興会結晶加工と評価技術第145委員会第137回研究会
- Place of Presentation
  明治大学（東京都千代田区）
- Invited
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] LP-MOVPE法で成長したSi添加AlxGa1-xN/AlyGa1-yN多重量子井戸構造(x~0.6)のカソードルミネッセンスマッピング評価
- Author(s)
  倉井聡　穴井恒二　若松歩　三宅秀人　平松和政　山田陽一
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京田辺市）
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] AlGaN系量子井戸構造における局在励起子分子の結合エネルギー
- Author(s)
  早川裕也　福野智視　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京田辺市）
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] AlGaN系量子井戸構造の高温PL測定
- Author(s)
  早川裕也　福野智視　中村豪仁　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（相模原市）
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] Effect of quantum confinement on biexciton binding energy in AlGaN-based quantum wells
- Author(s)
  Y. Hayakawa, T. Fukuno, H. Miyake, K. Hiramatsu, and Y. Yamada
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Gayload National Hotel and Convention Center, Washington, DC, USA
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] AlGaN混晶薄膜における励起子分子の熱的安定性
- Author(s)
  古谷佑二郎　中尾文哉　倉井聡　三宅秀人　平松和政　山田陽一
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京田辺市）
- Data Source
  KAKENHI-PROJECT-25420289
[Presentation] Al組成の異なるAlGaN薄膜のカソードルミネッセンス法による局所スペクトル評価
- Author(s)
  倉井聡　合田直樹　三宅秀人　平松和政　山田陽一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（相模原市）
- Data Source
  KAKENHI-PROJECT-25420289

1. TAGUCHI Tsunemasa (90101279)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
2. KURAI Satoshi (80304492)

# of Collaborated Projects: 2 results

# of Collaborated Products: 65 results
3. 三宅秀人 (70209881)

# of Collaborated Projects: 2 results

# of Collaborated Products: 16 results
4. Tadatomo Kazuyuki (10379927)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. SAKAI Akira (20314031)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. OKADA Narihito (70510684)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. SHINOZUKA Yuzo (30144918)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 山根啓輔 (80610815)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 甲斐綾子 (50253167)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 寒川義裕 (90327320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 上杉謙次郎 (40867305)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. SAKAIDA Toshiaki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. MUROTANI Hideaki

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
14. 平山秀樹

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
15. 平松和政

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results

Yamada Yoichi 山田 陽一

YAMADA Yoichi 山田 陽一

Research Projects

Research Products

Co-Researchers

AlGaN系深紫外半導体レーザの発振機構解明と励起子利得による超低しきい値化Principal Investigator

Principal Investigator

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Non-polar growth of AlGaN nitride semiconductor and its application in deep ultraviolet LEDs

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Optical properties and functionalities of dense excitonic systems in singularity structuresPrincipal Investigator

Principal Investigator

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Elucidation of fundamental optical properties of biexcitons in deep ultraviolet ternary alloy quantum wells and application to laser operationPrincipal Investigator

Principal Investigator

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Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate

Principal Investigator

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Optical functionality of dense excitonic systems in nitride-based deep-ultraviolet ternary alloy semiconductorsPrincipal Investigator

Principal Investigator

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深紫外混晶半導体における高密度励起子系の光物性評価と光機能性Principal Investigator

Principal Investigator

Project Period (FY)

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Review Section

Research Institution

窒化アルミニウム系深紫外半導体における高密度励起子系の光物性評価と光機能性Principal Investigator

Principal Investigator

Project Period (FY)

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Review Section

Research Institution

Development of new phosphors for high Ra white LEDs in the next generation

Principal Investigator

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Control of biexciton localization and optical functionality in nitride-based ultraviolet alloy semiconductorsPrincipal Investigator

Principal Investigator

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Control of biexciton localization and optical functionality in ZnMgCdS-based semiconductor quantum structuresPrincipal Investigator

Principal Investigator

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Localization of biexcitons and mechanism of optical gain formation in semiconductor low-dimensional structuresPrincipal Investigator

Principal Investigator

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低次元系の励起子分子を利用した短波長量子井戸レーザの作製Principal Investigator

Principal Investigator

Project Period (FY)

Yamada Yoichi 山田陽一

YAMADA Yoichi 山田陽一