Yamada Shoji 山田省二

… Alternative Names

YAMADA Syoji 山田省二

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Researcher Number	00262593
Affiliation (based on the past Project Information) *help	2020 – 2022: 大阪工業大学, 工学部, 教授 2015: 大阪工業大学, 教育センター, 教授 2013 – 2014: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 2011: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 2002 – 2005: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 2002 – 2005: 北陸先端科学技術大学院大学, 新素材センター, 教授 1996 – 2000: 北陸先端科学技術大学院大学, 材料科学研究科, 助教授
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Science and Engineering / Nanostructural physics / Electron device/Electronic equipment Except Principal Investigator 固体物性Ⅱ(磁性・金属・低温) / Electronic materials/Electric materials / Particle/Nuclear/Cosmic ray/Astro physics / Science and Engineering
Keywords	Principal Investigator スピン軌道相互作用 / 2次元電子ガス2層系 / スピントランジスタ / スピンFET / ゼロ磁場スピン分裂 / InGaAs / 多値論理素子 / InGaAs量子井戸 / スピンデバイス / スピン起動相互作用 … More / スピンバルブ特性 / 極低温測定 / スピンバルブ素子(SV)素子 / スピンFET（SFET)素子 / スピン論理素子 / 2層2次元電子ガス / スピン論理デバイス / ラシュバ分裂 / 2次元ホールガス / 2次元電子ガス / GaN / quantum computing device / side-gate / spin transistor / narrow-gap semiconductor / zero-field spin-splitting / inverted heteroiunction / spin-injection / spin-orbit interaction / 2重バッファ構造 / 新狭ギャップヘテロ結合 / 電子ビーム蒸着 / スピン注入電極 / 新狭ギャップヘテロ接合 / 分子線エピタキシ / ヘテロ接合 / 細線 / 逆ヘテロ接合 / 量子計算素子 / サイドゲート / 狭ギャップ半導体 / 逆構造ヘテロ接合 / スピン注入 / 逆スピンホール効果 / 2層系 / 2次元電子系 / ２層系 / ２次元電子系 / スピンホール効果 / 半導体ヘテロ接合 / スピンエレクトロニクス / 論理回路 / インバータ / スピンFET論理回路 / 強磁性電極 / スピンバルブ素子 / 磁性体ハイブリッド構造 / 半導体 / spin-FET / 2次元電子 / スピン軌道結合定数 / 高In組成ヘテロ接合 / サブドット / クーロン振動 / クーロンギャップ / 磁区 / 磁壁 / エッジ状態 / 強磁性金属ドット / 磁気力顕微鏡 / ダメ-ジ / クローンブロケード / クローン振動 / プラズマ発生装置 / 電界印加加工法 / 微細ホール / 半導体細線 / STM … More Except Principal Investigator Ni / GaAs / Au / MBE / nanoparticles / Pd / Pt / ナノ粒子 / magneto-optic effect / magnetoresistance / magnetic polarization / magnetism / 磁区 / 磁化 / 磁気光学効果 / 磁気抵抗 / 磁気偏極 / 磁性 / ferromagnetic metal / semiconductor / composite materials / ナノ合金 / 微粒子の久保効果 / Ni合金 / 巨大磁気モーメント / 質量分析装置 / スピン偏極 / スピン相関 / 表面 / 複合界面 / ナノ磁性体 / 強磁性金属 / 半導体 / 複合化 / MnAs / スピン / FET / ナノワイヤ / InAs / 選択成長 / 放射線耐性 / 放射線検出器 / ショットキーダイオード / 化合物半導体 / 酸化亜鉛 / 窒化ガリウム / 放射線損傷 / 放射線計測 / 半導体検出器 / グラニュラー構造 / スピン注入 / 電子スピントロニクスデバイス / キャリアスピン / 強磁性トンネル接合 / ヘテロ構造電子デバイス / ハーフメタ / 磁気抵抗効果 / ハーフメタル / スピン依存伝導 / MRAM / スピンMOSFET / スピンFET / 磁気抵抗スイッチ効果 / トンネル磁気抵抗効果 / ヘテロ構造 / 電子デバイス / スピントロニクス Less

Study of multi-value spin-logic device development using InGaAs quantum well bilayer electron systemsPrincipal Investigator
- Principal Investigator
  
  Yamada Shoji
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Osaka Institute of Technology
Study of coupled resonant spin-Hall effect in two-dimensional electron gas bilayer systemPrincipal Investigator
- Principal Investigator
  
  Yamada Syoji
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Nanostructural physics
- Research Institution
  Osaka Institute of Technology
  Japan Advanced Institute of Science and Technology
Realization of very low power dissipation logic circuit device by using Datta-Das spin-FETPrincipal Investigator
- Principal Investigator
  
  Yamada Syoji
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
  Japan Advanced Institute of Science and Technology
Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growth
- Principal Investigator
  
  AKABORI Masashi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Development of particle detector using a new generation compound
- Principal Investigator
  
  NARITA Shinya
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Particle/Nuclear/Cosmic ray/Astro physics
- Research Institution
  Iwate University
電子スピントロニクスデバイス研究調整班
- Principal Investigator
  
  田中雅明
- Project Period (FY)
  2002 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Study of spin injection and its device application in ferromagnetic/semiconductor hybrid systemPrincipal Investigator
- Principal Investigator
  
  YAMADA Syoji
- Project Period (FY)
  2002 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Japanese Advanced Institute of Science and Technology
強磁性ドット(列)をもつ半導体細線におけるスピン制御伝導のシクロ解析Principal Investigator
- Principal Investigator
  
  山田省二
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Japan Advanced Institute of Science and Technology
ナノメートルサイズ磁性体の電磁気的特性
- Principal Investigator
  
  HORI Hidenobu
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  固体物性Ⅱ(磁性・金属・低温)
- Research Institution
  Japan Advanced Institute of Science and Technology
超微細構造半導体上磁性ドットの量子干渉複合界面効果の研究
- Principal Investigator
  
  HORI Hidenobu
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  固体物性Ⅱ(磁性・金属・低温)
- Research Institution
  Japan Advanced Institute of Science and Technology
強磁性ドット(列)をもつ半導体細線におけるスピン制御伝導のミクロ解析Principal Investigator
- Principal Investigator
  
  山田省二
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Japan Advanced Institute of Science and Technology
STMによる複合量子ドットの作製と量子輸送の研究Principal Investigator
- Principal Investigator
  
  山田省二
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Japan Advanced Institute of Science and Technology

[Journal Article] High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N2 gas field ion source2014
- Author(s)
  M. Akabori, S. Hidaka, S. Yamada, T. Kozakai, O. Matsuda, and A. Yasaka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 11 Pages: 118002-118002
- DOI
  10.7567/jjap.53.118002
- NAID
  210000144607
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289100
[Journal Article] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2013
- Author(s)
  M. Akabori and S. Yamada
- Journal Title
  
  AIP Conf. Proc.
  
  Volume: 1566 Pages: 219-220
- DOI
  10.1063/1.4848364
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560368
[Journal Article] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2013
- Author(s)
  S. Hidaka, T. Kondo, M. Akabori and S. Yamada
- Journal Title
  
  AIP Conf. Proc.
  
  Volume: 1566 Pages: 329-330
- DOI
  10.1063/1.4848419
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560368
[Journal Article] High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices2012
- Author(s)
  Shiro Hidaka, Masashi Akabori, and Syoji Yamada
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 11 Pages: 113001-113001
- DOI
  10.1143/apex.5.113001
- NAID
  10031126453
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560368
[Journal Article] Spin-orbit interaction in high-In content InGaAs/InAlAs inverted heterojunctions for Rashba spintronics devices2007
- Author(s)
  H.K.Choi, Y.Kitta, T.Kakegawa, Y.Jeong, M.Akabori, T.Suzuki, S.Yamada
- Journal Title
  
  Proc. 28th Int. Conf. on Physics of Semiconductors
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-orbit interaction in high-In content in GaAs/InAlAs inverted heterojunctions for Rashba spintronics devices2007
- Author(s)
  H.K.Choi, Y.Kitta, T.Kakegawa, Y.Jeong, M.Akabori, T.Suzuki, S.Yamada
- Journal Title
  
  Proc. 28^<th> Int Conf. on Physics of Semiconductors (印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Dislocation-limited electron transport in InSb grown on GaAs(001)2006
- Author(s)
  T.Sato, T.Suzuki, S.Tomiya, S.Yamada
- Journal Title
  
  Physica B 376-377
  
  Pages: 579-583
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Dislocation-limited electron transport in InSb grown on GaAs (001)2006
- Author(s)
  T.Sato, T.Suzuki, S.Tomiya, S.Yamada
- Journal Title
  
  Physica B 376-377
  
  Pages: 579-583
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Quantum transport analysis and narrow-gap heterojunction growth for Rashba-type spintronics, devices2005
- Author(s)
  S.Yamada
- Journal Title
  
  J. Sci. and Tech. Advanced Materials 6
  
  Pages: 406-410
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Solid State Communi., 136,
  
  Pages: 479-483
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Quantum transport analysis and narrow-gap heterojunction growth for Rashba-type spintronics devices2005
- Author(s)
  S.Yamada
- Journal Title
  
  J. Sci. and Tech. Advanced Materials 6
  
  Pages: 406-410
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Solid State Communi., 136
  
  Pages: 479-483
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Sold State Commun. 136
  
  Pages: 479-483
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Selection-rule breaking of Raman scattering in InSb thin films grown on GaAs (001)2005
- Author(s)
  T.Sato, T.Suzuki, S.Yamada
- Journal Title
  
  Proc., I.6, 12^<th> Int Conf. on Narrow Gap Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-gate control of Rashba spin-orbit interaction in InGaAs/InAlAs narrow channels2005
- Author(s)
  S.Yamada, T.Kakegawa, M.Akabori
- Journal Title
  
  Proc., I.6, 12^<th> Int Conf. on Narrow Gap Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-Gate Control of Rashba Spin Splitting in a InGaAs/InALAs Heterojunction Narrow Channel : Toward Spin-Transistor-Based Qubits2005
- Author(s)
  T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Proc. of 27^<th> Int.Conf. on Physics of Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Clear Spin-Valve Signals in Conventional NiFe/InGaAs 2DEG Hybrid Two-Terminal Structures2005
- Author(s)
  M.Akabori, K.Suzuki, S.Yamada
- Journal Title
  
  Proc. of 27^<th> Int.Conf. on Physics of Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Clear Spin Valve Signals in Conventional NiFe/In_<0.75>Ga_<0.25>As-2DEG Hybrid Two-Terminal Structures2004
- Author(s)
  M.Akabori, K.Suzuki, S.Yamada
- Journal Title
  
  Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B
  
  Pages: 1373-1374
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] High quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and InAlSb step-graded buffers2004
- Author(s)
  T.Sato, M.Akabori, S.Yamada
- Journal Title
  
  Proc. of 11^<th> Modulated Semiconductor Structures (MSS-11)
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-gate control of Physics of Rashba spin splitting in a InGaAs/InAlAs heterojunction narrow channel : toward spin-transistor-based Qubits2004
- Author(s)
  T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Proceedings of 27th Int. Conf. on Semiconductors, Part B
  
  Pages: 1297-1298
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-related transport in one-dimensional conductors made at high In content InGaAs/InALAs hetero junctions2004
- Author(s)
  S.Yamada
- Journal Title
  
  J.Sci.and Tech.Advanced Materials 5
  
  Pages: 301-304
- Data Source
  KAKENHI-PROJECT-14076101
[Journal Article] Spin-related transport in one-dimensional conductors made at high In-content InGaAs/InAlAs hetero-functions2004
- Author(s)
  S.Yamada
- Journal Title
  
  Int.J.Sci. and Tech.Advanced Materials 5
  
  Pages: 301-304
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in Rashba quantum point contacts2004
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Physica E 22
  
  Pages: 464-467
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Clear Spin Valve Signals in Conventional NiFe/In0.75Ga0.25As-2DEG Hybrid Two-Terminal Structures2004
- Author(s)
  M.Akabori, K.Suzuki, S.Yamada
- Journal Title
  
  Proceedings of 27th Int. Conf. on Semiconductors, Part B
  
  Pages: 1373-1374
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-gate control of Rashba spin splitting in a InGaAs/InAlAs heterojunction narrow channel : toward spin-transistor-based Qubits2004
- Author(s)
  T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B
  
  Pages: 1297-1298
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-related transport in one-dimensional conductors made at high In-content InGaAs/InAlAs hetero-junctions2004
- Author(s)
  S.Yamada
- Journal Title
  
  J. Sci. and Tech. Advanced Materials 5
  
  Pages: 301-304
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin transport and injection in high-In content InGaAs/InAlAs heterostructure2003
- Author(s)
  S.Yamada
- Journal Title
  
  Int.J.Sci. and Tech.Advanced Materials 4
  
  Pages: 77-80
- Data Source
  KAKENHI-PROJECT-14076213
[Presentation] InGaAs 2次元電子ガス 2層デバイスのスピン依存伝導2022
- Author(s)
  山田省二、藤元章、赤堀誠志
- Organizer
  日本物理学会 2022年第77回年次大会
- Data Source
  KAKENHI-PROJECT-20K04631
[Presentation] InGaAs 2次元電子ガス2層系のスピンバルブ伝導2021
- Author(s)
  山田省二、藤元章、赤堀誠志
- Organizer
  日本物理学会 2021年秋季大会
- Data Source
  KAKENHI-PROJECT-20K04631
[Presentation] CoFe-InGaAs複合系におけるスピンバルブ伝導の磁場方位・ゲート電圧依存性2021
- Author(s)
  山田省二、藤元章、添田幸伸　赤堀誠志
- Organizer
  日本物理学会2021年第76回年次大会
- Data Source
  KAKENHI-PROJECT-20K04631
[Presentation] GaN/AlGaN 2次元電子ガスのスピン分裂2021
- Author(s)
  山田省二、藤元章、八木修一、成井啓修、山口栄一、今中康貴
- Organizer
  日本物理学会 2021年秋季大会
- Data Source
  KAKENHI-PROJECT-20K04631
[Presentation] ゲート付きCoFe-InGaAsスピンバルブ素子における輸送解析2020
- Author(s)
  山田省二、藤元章、添田幸伸　赤堀誠志
- Organizer
  日本物理学会2020年秋季大会
- Data Source
  KAKENHI-PROJECT-20K04631
[Presentation] InGaAs2次元電子ガス2層系における共鳴スピンホール効果測定2016
- Author(s)
  山田省二、藤元章、添田幸伸、赤堀誠志
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学　泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs2次元電子ガス2層系における共鳴スピンホール効果測定2016
- Author(s)
  山田省二、藤元章、添田幸伸、赤堀誠志
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] 高In組成InGaAs2次元電子ガスにおけるスピンバルブ特性の結晶方位依存性2016
- Author(s)
  添田幸伸、日高志郎、赤堀誠志、山田省二
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学　泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 表面反転層高In組成InGaAs2次元電子ガス2層系におけるサブバンド構造と量子ホール効果2016
- Author(s)
  添田幸伸、赤堀誠志、藤元章、山田省二、今中康貴、竹端寛治
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学　泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 表面反転層高In組成InGaAs2次元電子ガス2層系におけるサブバンド構造と量子ホール効果2016
- Author(s)
  添田幸伸、赤堀誠志、藤元章、山田省二、今中康貴、竹端寛治
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] 高In組成InGaAs2次元電子ガスにおけるスピンバルブ特性の結晶方位依存性2016
- Author(s)
  、添田幸伸、日高志郎、赤堀誠志、山田省二
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] 中心にInAlAs障壁層をもつInGaAs2次元電子ガス2層系のサブバンド輸送2015
- Author(s)
  胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
- Organizer
  日本物理学会第70回年次大会
- Place of Presentation
  早稲田大学（東京都新宿区）
- Year and Date
  2015-03-24
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Characterization of Spin-Orbit Coupling in Gated Wire Structures Using In0.75Ga0.25As/In0.75Al0.25As Inverted Heterojunctions2015
- Author(s)
  T. Ohori, M. Akabori, S. Hidaka, and S. Yamada
- Organizer
  2nd International Symposium on Frontiers in Materials Science, R3-3-3
- Place of Presentation
  Tokyo Japan
- Year and Date
  2015-11-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] 中心にInAlAs障壁層をもつInGaAs2次元電子ガス2層系のサブバンド輸送2015
- Author(s)
  胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
- Organizer
  日本物理学会第70回年次大会
- Place of Presentation
  早稲田大学（東京都新宿区）
- Year and Date
  2015-03-24
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] Cyclotron resonance in InGaAs Rashba bilayer system2015
- Author(s)
  Y. Imanaka, K. Takehana, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] Traces of fractional quantum Hall plateaus in asymmetric two-dimensional bilayer system in wide In[0.75]Ga[0.25]As well2015
- Author(s)
  S. Hidaka, H. Iwase, M. Akabori, S. Yamada, Y. Imanaka, K. Takehana
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Fabrication and characterization of gated parallel wire structures having a metamorphic InGaAs/InAlAs heterojunction with high In content2015
- Author(s)
  T. Ohori, M. Akabori, S. Hidaka, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 高In組成InGaAs/InAlAs2次元電子ガス2層系共鳴スピンホール効果観測の基本検討2015
- Author(s)
  山田省二、藤元章、赤堀誠志
- Organizer
  日本物理学会2015年秋季大会
- Place of Presentation
  関西大学千里山キャンパス
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] 高In組成InGaAs/InAlAs2次元電子ガス2層系共鳴スピンホール効果観測の基本検討2015
- Author(s)
  山田省二、藤元章、赤堀誠志
- Organizer
  日本物理学会2015年秋季大会
- Place of Presentation
  関西大学　千里山キャンパス
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Characterization of Spin-Orbit Coupling in Gated Wire Structures Using In0.75Ga0.25As/In0.75Al0.25As Inverted Heterojunctions2015
- Author(s)
  T. Ohori, M. Akabori, S. Hidaka, and S. Yamada
- Organizer
  2nd International Symposium on Frontiers in Materials Science, R3-3-3
- Place of Presentation
  Tokyo Japan
- Year and Date
  2015-11-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs/InAlAs2次元電子ガス2層系における分数量子ホールプラトーの痕跡2015
- Author(s)
  山田省二、今中康貴、竹端寛治、赤堀誠志
- Organizer
  日本物理学会2015年秋季大会
- Place of Presentation
  関西大学千里山キャンパス
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] Cyclotron resonance in InGaAs Rashba bilayer system2015
- Author(s)
  Y. Imanaka, K. Takehana, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Traces of fractional quantum Hall plateaus in asymmetric two-dimensional bilayer system in wide In[0.75]Ga[0.25]As well2015
- Author(s)
  S. Hidaka, H. Iwase, M. Akabori, S. Yamada, Y. Imanaka, K. Takehana
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] Fabrication and characterization of gated parallel wire structures having a metamorphic InGaAs/InAlAs heterojunction with high In content2015
- Author(s)
  T. Ohori, M. Akabori, S. Hidaka, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] Subband transport in two-dimensional electron gas bilayer system in narrow In]0.75]Ga[0.25]As well with center In[0.75]Al[0.25]As barrier2015
- Author(s)
  K. Hu, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] 高In組成メタモルフィックInGaAs/InAlAsヘテロ接合を用いたゲート付細線構造の評価2015
- Author(s)
  大堀高寛、赤堀誠志、日高志郎、山田省二
- Organizer
  日本物理学会第70回年次大会
- Place of Presentation
  早稲田大学（東京都新宿区）
- Year and Date
  2015-03-24
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs/InAlAs2次元電子ガス2層系における分数量子ホールプラトーの痕跡2015
- Author(s)
  山田省二、今中康貴、竹端寛治、赤堀誠志
- Organizer
  日本物理学会2015年秋季大会
- Place of Presentation
  関西大学　千里山キャンパス
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Subband transport in two-dimensional electron gas bilayer system in narrow In]0.75]Ga[0.25]As well with center In[0.75]Al[0.25]As barrier2015
- Author(s)
  K. Hu, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs 2次元電子ガス2層系のサブバンド輸送解析 (2)2014
- Author(s)
  胡ガイ，張儲君，日高志郎，岩瀬比宇麻，赤堀誠志，山田省二
- Organizer
  日本物理学会秋季大会
- Place of Presentation
  中部大学（愛知県春日井市）
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs 2次元電子ガス2層系のサブバンド輸送解析 (2)2014
- Author(s)
  胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
- Organizer
  日本物理学会2014年秋季大会
- Place of Presentation
  中部大学（愛知県春日井市）
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-26600012
[Presentation] 領域選択分子線エピタキシーによるGaAs(211)Bマスク基板上への面内配向InAsナノワイヤの形成2013
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学 (京田辺)
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] In-plane oriented InAs nanowire formation by selsctive area molecular beam epitaxy on GaAs (211)B substrates2013
- Author(s)
  M. Akabori, T. Murakami, and S. Yamada
- Organizer
  the 16th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  Wroclaw University of Technology (Wroclaw, Poland)
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] GaAs上の領域選択分子線成長による面内配向InAsナノワイヤの試作と電気的評価2013
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  富山大学 (富山)
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] GaAs(110)上の選択成長により形成したInAsナノワイヤの電子輸送特性2012
- Author(s)
  赤堀誠志、山田省二
- Organizer
  日本物理学会2012秋季大会
- Place of Presentation
  横浜
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2012
- Author(s)
  M. Akabori and S. Yamada
- Organizer
  the 31st International Conference on the Physics of Semiconductors
- Place of Presentation
  Zurich, Switzerland
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] 強磁性電極/高In組成InGaAs-2次元電子系接合における非局所スピン注入のゲート電圧依存性2012
- Author(s)
  日高志郎、近藤太郎、赤堀誠志、山田省二
- Organizer
  日本物理学会2012秋季大会
- Place of Presentation
  横浜
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2012
- Author(s)
  S. Hidaka, T. Kondo, M. Akabori, and S. Yamada
- Organizer
  the 31st International Conference on the Physics of Semiconductors
- Place of Presentation
  Zurich, Switzerland
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] 窒化物半導体によるダイオード素子の特性評価2010
- Author(s)
  西堀義美,内藤裕貴,一瀬大介,成田晋也,山田弘,人羅俊実,山口栄一,山田省二
- Organizer
  平成22年度電気関係学会東北支部連合大会
- Place of Presentation
  八戸工業大学
- Year and Date
  2010-08-27
- Data Source
  KAKENHI-PROJECT-21540292
[Presentation] 陽子線照射によるIII族窒化物半導体の放射線耐性評価2009
- Author(s)
  一瀬大介、成田晋也、西堀義美、山田弘、人羅俊実、山口栄一、酒見泰寛、伊藤正俊、吉田英智
- Organizer
  平成21年度電気関係学会東北支部連合大会
- Place of Presentation
  東北文化学園大学
- Year and Date
  2009-08-21
- Data Source
  KAKENHI-PROJECT-21540292
[Presentation] Top-down fabrication and electrical characterization of In0.75Ga0.25As/In0.75Al0.25As quantum nanostructures
- Author(s)
  M. Akabori, T. Ohori, S. Hidaka, S. Yamada, and A. Yasaka
- Organizer
  International Symposium on Nano - Materials, Technology and Applications
- Place of Presentation
  , Hanoi, Vietnam
- Year and Date
  2014-10-15 – 2014-10-17
- Invited
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 新構造InGaAs 2次元電子ガス2層系のサブバンド輸送解析
- Author(s)
  胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
- Organizer
  日本物理学会第69回年次大会
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs2次元電子ガス2層系における量子ホール効果
- Author(s)
  石田晋一、胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二、今中康貴、高増　正
- Organizer
  日本物理学会第69回年次大会
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs2次元電子ガス2層系におけるサブバンド輸送と量子ホール効果
- Author(s)
  日高志郎、岩瀬比宇麻、赤堀誠志、山田省二、今中康貴，高増　正
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-25289100

1. AKABORI Masashi (50345667)

# of Collaborated Projects: 4 results

# of Collaborated Products: 46 results
2. Iwase Hiuma (10709132)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
3. Tsuchiya Takuma (40262597)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. HORI Hidenobu (20028244)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. FURUSAWA Masahiro (00251976)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. NARITA Shinya (80322965)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
7. Murakami Shuichi (30282685)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. Uchitomi Naotaka (20313562)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. KINDO Koichi (20205058)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. SAKURAI Toru (10183047)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 田中雅明 (30192636)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 猪俣浩一郎 (90323071)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 秋永広幸 (90221712)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. BEAUVILLAIN Pierre

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. BARTENLIAN Bernard

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Yamada Shoji 山田 省二

YAMADA Syoji 山田 省二

Research Projects

Research Products

Co-Researchers

Study of multi-value spin-logic device development using InGaAs quantum well bilayer electron systemsPrincipal Investigator

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Study of coupled resonant spin-Hall effect in two-dimensional electron gas bilayer systemPrincipal Investigator

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Realization of very low power dissipation logic circuit device by using Datta-Das spin-FETPrincipal Investigator

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Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growth

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Development of particle detector using a new generation compound

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電子スピントロニクスデバイス研究調整班

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Study of spin injection and its device application in ferromagnetic/semiconductor hybrid systemPrincipal Investigator

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強磁性ドット(列)をもつ半導体細線におけるスピン制御伝導のシクロ解析Principal Investigator

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ナノメートルサイズ磁性体の電磁気的特性

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超微細構造半導体上磁性ドットの量子干渉複合界面効果の研究

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強磁性ドット(列)をもつ半導体細線におけるスピン制御伝導のミクロ解析Principal Investigator

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STMによる複合量子ドットの作製と量子輸送の研究Principal Investigator

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[Journal Article] High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N2 gas field ion source2014

Author(s)

Journal Title

DOI

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Data Source

Yamada Shoji 山田省二

YAMADA Syoji 山田省二