AKABORI Masashi 赤堀誠志

Researcher Number	50345667
Other IDs
Affiliation *help	2012 – 2018 : 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授 2015 : 北陸先端科学技術大学院大学, 学内共同利用施設等, 准教授 2014 : 北陸先端科学技術大学院大学, ナノマテリアルテクノロジ-センター, 准教授 2010 – 2011 : 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教 2007 : Japan Advanced Institute of Science and Technology, Center for Nano Materials and Technology, Assistant Professor 2003 – 2006 : 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助手 2005 : 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Science and Engineering / Electronic materials/Electric materials / Electron device/Electronic equipment
Keywords	Principal Investigator InAs / 歪み多層ヘテロ構造 / 選択成長 / ナノワイヤ / 化合物半導体 / 分子線エピタキシャル成長 / MnAs / 分子線エピタキシー / ナノリング / ナノチューブ … More Except Principal Investigator スピン軌道相互作用 / インバータ / スピン注入電極 / spin-orbit interaction / 量子計算素子 / 逆ヘテロ接合 / スピンFET / サイドゲート / スピンバルブ素子 / 電子デバイス・機器 / 論理回路 / 新狭ギャップヘテロ結合 / electronic materials / スピンエレクトロニクス / side-gate / スピン注入 / crystal growth / zero-field spin-splitting / electron device / 電子・電気材料 / spin-injection / 狭ギャップ半導体 / 電子ビーム蒸着 / 新狭ギャップヘテロ接合 / narrow-gap semiconductor / MBE. epitaxial / semiconductor physics / inverted heteroiunction / 結晶工学 / 細線 / ゼロ磁場スピン分裂 / スピンFET論理回路 / quantum computing device / 半導体ヘテロ接合 / 2重バッファ構造 / ヘテロ接合 / MBE、エゴタキシャル / 半導体物性 / スピントランジスタ / 分子線エピタキシ / 逆構造ヘテロ接合 / spin transistor / MBE、エピタキシャル / 強磁性電極 Less

Interface structure and in-plane spin transport in MnAs/III-V-based heterostructures on (111)BPrincipal InvestigatorOngoing
- Principal Investigator
  
  赤堀誠志
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Japan Advanced Institute of Science and Technology
Realization of very low power dissipation logic circuit device by using Datta-Das spin-FET
- Principal Investigator
  
  Yamada Syoji
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
  Japan Advanced Institute of Science and Technology
Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growthPrincipal Investigator
- Principal Investigator
  
  AKABORI Masashi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Planar nanowire field-effect transistors using selective-area epitaxy on(110)Principal Investigator
- Principal Investigator
  
  AKABORI Masashi
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuits
- Principal Investigator
  
  SUZUKI Toshi-kazu
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
電気化学プロセスによる半導体機能性立体ナノ材料の金属被覆とナノ工学応用Principal Investigator
- Principal Investigator
  
  赤堀誠志
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
化合物半導体歪み多層ヘテロ構造をベースとした機能性立体ナノ材料の形成と評価Principal Investigator
- Principal Investigator
  
  赤堀誠志
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Study of spin injection and its device application in ferromagnetic/semiconductor hybrid system
- Principal Investigator
  
  YAMADA Syoji
- Project Period (FY)
  2002 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Japanese Advanced Institute of Science and Technology

All 2016 2015 2014 2013 2012 2011 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

[Journal Article] High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N2 gas field ion source2014
- Author(s)
  M. Akabori, S. Hidaka, S. Yamada, T. Kozakai, O. Matsuda, and A. Yasaka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume : 53 Issue : 11 Pages : 118002-1-118002-3
- Publisher
  The Japan Society of Applied Physics
- DOI
  10.7567/JJAP.53.118002
- Year and Date
  2014-10-09
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289100
[Journal Article] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2013
- Author(s)
  S. Hidaka, T. Kondo, M. Akabori and S. Yamada
- Journal Title
  
  AIP Conf. Proc.
  
  Volume : 1566 Pages : 329-330
- DOI
  10.1063/1.4848419
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560368
[Journal Article] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2013
- Author(s)
  M. Akabori and S. Yamada
- Journal Title
  
  AIP Conf. Proc.
  
  Volume : 1566 Pages : 219-220
- DOI
  10.1063/1.4848364
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560368
[Journal Article] High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices2012
- Author(s)
  Shiro Hidaka, Masashi Akabori, and Syoji Yamada
- Journal Title
  
  Applied Physics Express
  
  Volume : 5 Issue : 11 Pages : 113001-1-113001-3
- Publisher
  The Japan Society of Applied Physics
- DOI
  10.1143/APEX.5.113001
- Year and Date
  2012-10-12
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560368
[Journal Article] Selective area molecular beam epitaxy of InAs on GaAs(110) masked substrates for direct fabrication of planar nanowire field-effect transistors2012
- Author(s)
  M. Akabori, T. Murakami, and S. Yamada
- Journal Title
  
  J. Crystal Growth
  
  Volume : Vol.345 Pages : 22-26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760228
[Journal Article] Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors2012
- Author(s)
  M.Akabori, T.Murakami, S.Yamada
- Journal Title
  
  J.Crystal Growth
  
  Volume : 345 Issue : 1 Pages : 22-26
- Publisher
  Elsevier
- DOI
  10.1016/j.jcrysgro.2012.02.009
- Year and Date
  2012-02-10
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760228
[Journal Article] Epitaxial lift-off of hiGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, M. Akabori, T. Suzuki
- Journal Title
  
  Appl. Phys. Express vol. vol.1(referred)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, H. Takita, M. Akabori, T. Suzuki
- Journal Title
  
  phys. stat. sol. (c) (in press)(referred)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Structural,optical,and electrical characterizations of epitaxial lifted-offInGaAs/lnAIAs metamorphic heterostructures bonded on AIN ceramic substrates2008
- Author(s)
  Y.Jeong, M.Shindo, H.Takita, M.Akabori, and T.Suzuki
- Journal Title
  
  phys.stat.sol.(c)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<0.89> Ga_<0.11> Sb/In_<0.88> Al_<0.12>Sb by magnetoresistance measurements2008
- Author(s)
  M.Akabori, V.A.Guzenko, T.Sato, Th.Schaepers, T.Suzuki, and S.Yamada
- Journal Title
  
  Phys.Rev.B
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Epitaxial lift-off of InGaAs/lnAIAs metamorphic high electron mobility heterostructures and their vander Waals bonding on AIN ceramic substrates2008
- Author(s)
  Y.Jeong, M.Shindo, M.Akabori, and T.Suzuki
- Journal Title
  
  Appl.Phys.Express 1
  
  Pages : 21201-21201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Epitaxial lift-off of InGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, M. Akabori, and T. Suzuki
- Journal Title
  
  Appl. Phys. Express 1
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<o.89>Ga_<0.11>Sb/In_<0.88>Al_<0.12>Sb by magnetoresistance measurements2008
- Author(s)
  M. Akabori, V. A. Guzenko, T. Sato, Th. Schaepers, T. Suzuki, and S. Yamada
- Journal Title
  
  Phys. Rev. B 77
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, H. Takita, M. Akabori, and T. Suzuki
- Journal Title
  
  phys. stat. sol.(c) (in press)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin-orbit interaction in high-In content InGaAs/InAlAs inverted heterojunctions for Rashba spintronics devices2007
- Author(s)
  H.K.Choi, Y.Kitta, T.Kakegawa, Y.Jeong, M.Akabori, T.Suzuki, S.Yamada
- Journal Title
  
  Proc. 28th Int. Conf. on Physics of Semiconductors
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-orbit interaction in high-In content in GaAs/InAlAs inverted heterojunctions for Rashba spintronics devices2007
- Author(s)
  H.K.Choi, Y.Kitta, T.Kakegawa, Y.Jeong, M.Akabori, T.Suzuki, S.Yamada
- Journal Title
  
  Proc. 28^<th> Int Conf. on Physics of Semiconductors (印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006
- Author(s)
  M,. Akabori, T. Sunouchi, T. Kakegawa, T. Sato, T. Suzuki, S. Yamada
- Journal Title
  
  Physica E referred vol.34
  
  Pages : 413-416
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006
- Author(s)
  V.A. Guzenko, M. Akabori, Th. Schapers, S. Cabanas, T. Sato, T. Suzuki, S. Yamada
- Journal Title
  
  phys. stat sol. (c) referred vol.3
  
  Pages : 4227-4230
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006
- Author(s)
  M. Akabori, T. Sunouchi, T. Kakegawa, T. Sato, T. Suzuki, and S. Yamada
- Journal Title
  
  Physica E 34
  
  Pages : 413-416
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006
- Author(s)
  V.A.Guzenko, M.Akabori, Th.Schapers, S.Cabanas, T.Sato, T.Suzuki, S.Yamada
- Journal Title
  
  Phys. stat. sol.(c) 3
  
  Pages : 4227-4230
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006
- Author(s)
  M.Akabori, T.Sunouchi, T.Kakegawa, T.Sato, T.Suzuki, S.Yamada
- Journal Title
  
  Physica E 34
  
  Pages : 413-416
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006
- Author(s)
  V. A. Guzenko, M. Akabori, Th. Schapers, S. Cabanas, T. Sato, T. Suzuki, and S. Yamada
- Journal Title
  
  phys. stet. sol.(c) 3
  
  Pages : 4227-4230
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Side-Gate Control of Rashba Spin Splitting in a InGaAs/InALAs Heterojunction Narrow Channel : Toward Spin-Transistor-Based Qubits2005
- Author(s)
  T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Proc. of 27^<th> Int.Conf. on Physics of Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Sold State Commun. 136
  
  Pages : 479-483
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Solid State Communi., 136
  
  Pages : 479-483
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Clear Spin-Valve Signals in Conventional NiFe/InGaAs 2DEG Hybrid Two-Terminal Structures2005
- Author(s)
  M.Akabori, K.Suzuki, S.Yamada
- Journal Title
  
  Proc. of 27^<th> Int.Conf. on Physics of Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-gate control of Rashba spin-orbit interaction in InGaAs/InAlAs narrow channels2005
- Author(s)
  S.Yamada, T.Kakegawa, M.Akabori
- Journal Title
  
  Proc., I.6, 12^<th> Int Conf. on Narrow Gap Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Solid State Communi., 136,
  
  Pages : 479-483
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Clear Spin Valve Signals in Conventional NiFe/In0.75Ga0.25As-2DEG Hybrid Two-Terminal Structures2004
- Author(s)
  M.Akabori, K.Suzuki, S.Yamada
- Journal Title
  
  Proceedings of 27th Int. Conf. on Semiconductors, Part B
  
  Pages : 1373-1374
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Clear Spin Valve Signals in Conventional NiFe/In_<0.75>Ga_<0.25>As-2DEG Hybrid Two-Terminal Structures2004
- Author(s)
  M.Akabori, K.Suzuki, S.Yamada
- Journal Title
  
  Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B
  
  Pages : 1373-1374
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-gate control of Rashba spin splitting in a InGaAs/InAlAs heterojunction narrow channel : toward spin-transistor-based Qubits2004
- Author(s)
  T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B
  
  Pages : 1297-1298
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] High quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and InAlSb step-graded buffers2004
- Author(s)
  T.Sato, M.Akabori, S.Yamada
- Journal Title
  
  Proc. of 11^<th> Modulated Semiconductor Structures (MSS-11)
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in Rashba quantum point contacts2004
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Physica E 22
  
  Pages : 464-467
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-gate control of Physics of Rashba spin splitting in a InGaAs/InAlAs heterojunction narrow channel : toward spin-transistor-based Qubits2004
- Author(s)
  T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Proceedings of 27th Int. Conf. on Semiconductors, Part B
  
  Pages : 1297-1298
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In^<0.89>Ga^<0.11>Sb/In^<0.88>Sb by magnetoresistance measurements
- Author(s)
  M. Akabori, V.A. Guzenko, T. Sato, Th. Schaepers, T.Suzuki, S. Yamada
- Journal Title
  
  Phys. Rev. B referred vol.77
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Presentation] 高In組成InGaAs2次元電子ガスにおけるスピンバルブ特性の結晶方位依存性2016
- Author(s)
  添田幸伸、日高志郎、赤堀誠志、山田省二
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学　泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 表面反転層高In組成InGaAs2次元電子ガス2層系におけるサブバンド構造と量子ホール効果2016
- Author(s)
  添田幸伸、赤堀誠志、藤元章、山田省二、今中康貴、竹端寛治
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学　泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs2次元電子ガス2層系における共鳴スピンホール効果測定2016
- Author(s)
  山田省二、藤元章、添田幸伸、赤堀誠志
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学　泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 高In組成InGaAs/InAlAs2次元電子ガス2層系共鳴スピンホール効果観測の基本検討2015
- Author(s)
  山田省二、藤元章、赤堀誠志
- Organizer
  日本物理学会2015年秋季大会
- Place of Presentation
  関西大学　千里山キャンパス
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Traces of fractional quantum Hall plateaus in asymmetric two-dimensional bilayer system in wide In[0.75]Ga[0.25]As well2015
- Author(s)
  S. Hidaka, H. Iwase, M. Akabori, S. Yamada, Y. Imanaka, K. Takehana
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Nitrogen and helium gas field ion source for nanofabrication2015
- Author(s)
  M. E. Schmidt, K. Nagahara, O. Takechi, M. Akabori, A. Yasaka, T. Shimoda and M. Mizuta
- Organizer
  AVS 62nd International Symposium & Exhibition 2015
- Place of Presentation
  San Jose, California, USA
- Year and Date
  2015-10-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] In(Ga)As系2DEG・ナノワイヤにおける伝導電子のスピン物性2015
- Author(s)
  赤堀誠志
- Organizer
  応用物理学会応用電子物性分科会研究例会
- Place of Presentation
  首都大学東京秋葉原サテライトキャンパス(東京都千代田区)
- Year and Date
  2015-06-23
- Invited
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Cyclotron resonance in InGaAs Rashba bilayer system2015
- Author(s)
  Y. Imanaka, K. Takehana, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] In-Plane Transport Properties of MnAs/InAs/ GaAs(111)B Grown by Molecular Beam Epitaxy2015
- Author(s)
  Md. E. Islam, C. T. Nguyen, M. Akabori
- Organizer
  In-Plane Transport Properties of MnAs/InAs/ GaAs(111)B Grown by Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Characterization of Spin-Orbit Coupling in Gated Wire Structures Using In0.75Ga0.25As/In0.75Al0.25As Inverted Heterojunctions2015
- Author(s)
  T. Ohori, M. Akabori, S. Hidaka, and S. Yamada
- Organizer
  2nd International Symposium on Frontiers in Materials Science, R3-3-3
- Place of Presentation
  Tokyo Japan
- Year and Date
  2015-11-19
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Subband transport in two-dimensional electron gas bilayer system in narrow In]0.75]Ga[0.25]As well with center In[0.75]Al[0.25]As barrier2015
- Author(s)
  K. Hu, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 高In組成メタモルフィックInGaAs/InAlAsヘテロ接合を用いたゲート付細線構造の評価2015
- Author(s)
  大堀高寛、赤堀誠志、日高志郎、山田省二
- Organizer
  日本物理学会第70回年次大会
- Place of Presentation
  早稲田大学（東京都新宿区）
- Year and Date
  2015-03-24
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 中心にInAlAs障壁層をもつInGaAs2次元電子ガス2層系のサブバンド輸送2015
- Author(s)
  胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
- Organizer
  日本物理学会第70回年次大会
- Place of Presentation
  早稲田大学（東京都新宿区）
- Year and Date
  2015-03-24
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Fabrication and characterization of gated parallel wire structures having a metamorphic InGaAs/InAlAs heterojunction with high In content2015
- Author(s)
  T. Ohori, M. Akabori, S. Hidaka, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs/InAlAs2次元電子ガス2層系における分数量子ホールプラトーの痕跡2015
- Author(s)
  山田省二、今中康貴、竹端寛治、赤堀誠志
- Organizer
  日本物理学会2015年秋季大会
- Place of Presentation
  関西大学　千里山キャンパス
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs 2次元電子ガス2層系のサブバンド輸送解析 (2)2014
- Author(s)
  胡ガイ，張儲君，日高志郎，岩瀬比宇麻，赤堀誠志，山田省二
- Organizer
  日本物理学会秋季大会
- Place of Presentation
  中部大学（愛知県春日井市）
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] In-plane oriented InAs nanowire formation by selsctive area molecular beam epitaxy on GaAs (211)B substrates2013
- Author(s)
  M. Akabori, T. Murakami, and S. Yamada
- Organizer
  the 16th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  Wroclaw University of Technology (Wroclaw, Poland)
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] GaAs上の領域選択分子線成長による面内配向InAsナノワイヤの試作と電気的評価2013
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  富山大学 (富山)
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] 領域選択分子線エピタキシーによるGaAs(211)Bマスク基板上への面内配向InAsナノワイヤの形成2013
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学 (京田辺)
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2012
- Author(s)
  S. Hidaka, T. Kondo, M. Akabori, and S. Yamada
- Organizer
  the 31st International Conference on the Physics of Semiconductors
- Place of Presentation
  Zurich, Switzerland
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs(110) masked substrates2012
- Author(s)
  M. Akabori, and S. Yamada
- Organizer
  31st International Conference on Semiconductor Physics
- Place of Presentation
  Zulich, Switzerland
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2012
- Author(s)
  M. Akabori and S. Yamada
- Organizer
  the 31st International Conference on the Physics of Semiconductors
- Place of Presentation
  Zurich, Switzerland
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] 強磁性電極/高In組成InGaAs-2次元電子系接合における非局所スピン注入のゲート電圧依存性2012
- Author(s)
  日高志郎、近藤太郎、赤堀誠志、山田省二
- Organizer
  日本物理学会2012秋季大会
- Place of Presentation
  横浜
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] GaAs(110)上の選択成長により形成したInAsナノワイヤの電子輸送特性2012
- Author(s)
  赤堀誠志、山田省二
- Organizer
  日本物理学会2012秋季大会
- Place of Presentation
  横浜
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] 領域選択分子線エピタキシーによるGaAs(001),(111)Bおよび(110)マスク基板上へのInAsナノワイヤ形成2011
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形市・山形大学小白川キャンパス
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] Selective Area Molecular Beam Epitaxy of InAs Nanowires on Various Oriented GaAs Substrates2011
- Author(s)
  M.Akabori, T.Murakami, S.Yamada
- Organizer
  The 15th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  Tallahassee, FL, USA
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] 領域選択分子線エピタキシーによるGaAs(001),(111) Bおよび(110)マスク基板上へのInAsナノワイヤ形成2011
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形県山形市
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] Selective Area Molecular Beam Epitaxy of InAs Nanowires on Various Oriented GaAs Substrates2011
- Author(s)
  M. Akabori, T. Murakami, and S. Yamada
- Organizer
  The 15th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  Tallahassee, FL, US
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] InGaAs2次元電子ガス2層系における量子ホール効果
- Author(s)
  石田晋一、胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二、今中康貴、高増　正
- Organizer
  日本物理学会第69回年次大会
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 新構造InGaAs 2次元電子ガス2層系のサブバンド輸送解析
- Author(s)
  胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
- Organizer
  日本物理学会第69回年次大会
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs2次元電子ガス2層系におけるサブバンド輸送と量子ホール効果
- Author(s)
  日高志郎、岩瀬比宇麻、赤堀誠志、山田省二、今中康貴，高増　正
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Contact properties of MnAs/InAs grown on GaAs(111)B by molecular beam epitaxy
- Author(s)
  Md. E. Islam, C. T. Nguyen, M. Akabori
- Organizer
  the 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Place of Presentation
  朱鷺メッセ(新潟県新潟市)
- Year and Date
  2015-06-16 – 2015-06-19
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Molecular beam epitaxial growth of MnAs/ InAs/GaAs(111)B heterostructure
- Author(s)
  C. T. Nguyen, Md. E. Islam, M. Akabori
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス(神奈川県相模原市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Top-down fabrication and electrical characterization of In0.75Ga0.25As/In0.75Al0.25As quantum nanostructures
- Author(s)
  M. Akabori, T. Ohori, S. Hidaka, S. Yamada, and A. Yasaka
- Organizer
  International Symposium on Nano - Materials, Technology and Applications
- Place of Presentation
  , Hanoi, Vietnam
- Year and Date
  2014-10-15 – 2014-10-17
- Invited
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 面内配向InAsナノワイヤのウェットエッチ狭窄
- Author(s)
  グエン・コン・タン、赤堀誠志
- Organizer
  平成26年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山大学五福キャンパス(富山県富山市)
- Year and Date
  2014-11-07 – 2014-11-08
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] In-plane oriented InAs nanowire field-effect transistors formed by combination of selective area molecular beam epitaxy and wet-etch thinning process
- Author(s)
  C. T. Nguyen and M. Akabori
- Organizer
  2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  金沢市文化ホール(石川県金沢市)
- Year and Date
  2014-07-01 – 2014-07-03
- Data Source
  KAKENHI-PROJECT-24560368

1. YAMADA Syoji (00262593)

# of Collaborated Projects : 3results

# of Collaborated Products : 42results
2. Tsuchiya Takuma (40262597)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
3. SUZUKI Toshi-kazu (80362028)

# of Collaborated Projects : 1results

# of Collaborated Products : 15results
4. 岩瀬比宇麻 (10709132)

# of Collaborated Projects : 1results

# of Collaborated Products : 8results

AKABORI Masashi 赤堀 誠志

Research Projects

Research Products

Co-Researchers

Interface structure and in-plane spin transport in MnAs/III-V-based heterostructures on (111)BPrincipal InvestigatorOngoing

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Realization of very low power dissipation logic circuit device by using Datta-Das spin-FET

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Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growthPrincipal Investigator

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Planar nanowire field-effect transistors using selective-area epitaxy on(110)Principal Investigator

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Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuits

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電気化学プロセスによる半導体機能性立体ナノ材料の金属被覆とナノ工学応用Principal Investigator

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化合物半導体歪み多層ヘテロ構造をベースとした機能性立体ナノ材料の形成と評価Principal Investigator

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Study of spin injection and its device application in ferromagnetic/semiconductor hybrid system

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[Journal Article] High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N2 gas field ion source2014

Author(s)

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DOI

Year and Date

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Data Source

[Journal Article] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices2012

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DOI

Year and Date

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Data Source

[Journal Article] Selective area molecular beam epitaxy of InAs on GaAs(110) masked substrates for direct fabrication of planar nanowire field-effect transistors2012

Author(s)

AKABORI Masashi 赤堀誠志