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Akabori Masashi  赤堀 誠志

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AKABORI Masashi  赤堀 誠志

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Researcher Number 50345667
Other IDs
Affiliation (Current) 2022: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授
Affiliation (based on the past Project Information) *help 2018 – 2021: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授
2015: 北陸先端科学技術大学院大学, 学内共同利用施設等, 准教授
2012 – 2015: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授
2014: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジ-センター, 准教授
2010 – 2011: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教 … More
2007: Japan Advanced Institute of Science and Technology, Center for Nano Materials and Technology, Assistant Professor
2003 – 2006: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助手
2005: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教授 Less
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Basic Section 21060:Electron device and electronic equipment-related
Except Principal Investigator
Electron device/Electronic equipment / Science and Engineering / Electronic materials/Electric materials
Keywords
Principal Investigator
InAs / MnAs / 化合物半導体 / 歪み多層ヘテロ構造 / 分子線エピタキシャル成長 / 選択成長 / ナノワイヤ / 分子線エピタキシー / ナノチューブ / 電子物性 … More / 薄膜金属電極 / ナノリング / ナノコイル / 半導体チューブ・コイル / 電気化学プロセス / 金属被覆膜 / (110) / 電界効果トランジスタ / -110 / トランジスタ / MBE / FET / スピン / スピン軌道結合 / MnAs/InAs / スピンバルブ素子 / 界面構造 / 面内スピン伝播 / 非局所 / 縦型ゲートオールアラウンド … More
Except Principal Investigator
スピン軌道相互作用 / スピンバルブ素子 / 強磁性電極 / スピンFET論理回路 / スピンFET / インバータ / 論理回路 / スピンエレクトロニクス / 半導体ヘテロ接合 / スピン注入 / 逆構造ヘテロ接合 / ゼロ磁場スピン分裂 / 狭ギャップ半導体 / スピントランジスタ / サイドゲート / 量子計算素子 / 逆ヘテロ接合 / 細線 / ヘテロ接合 / 分子線エピタキシ / 新狭ギャップヘテロ接合 / スピン注入電極 / 電子ビーム蒸着 / 新狭ギャップヘテロ結合 / 2重バッファ構造 / spin-orbit interaction / spin-injection / inverted heteroiunction / zero-field spin-splitting / narrow-gap semiconductor / spin transistor / side-gate / quantum computing device / 電子・電気材料 / 結晶工学 / MBE、エピタキシャル / 半導体物性 / 電子デバイス・機器 / MBE、エゴタキシャル / electronic materials / crystal growth / MBE. epitaxial / semiconductor physics / electron device Less
  • Research Projects

    (9 results)
  • Research Products

    (75 results)
  • Co-Researchers

    (4 People)
  •  縦型スピンデバイスに向けた(111)B上MnAs/III-V/MnAsヘテロ構造Principal Investigator

    • Principal Investigator
      赤堀 誠志
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Japan Advanced Institute of Science and Technology
  •  Interface structure and in-plane spin transport in MnAs/III-V-based heterostructures on (111)BPrincipal Investigator

    • Principal Investigator
      Akabori Masashi
    • Project Period (FY)
      2018 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Japan Advanced Institute of Science and Technology
  •  Realization of very low power dissipation logic circuit device by using Datta-Das spin-FET

    • Principal Investigator
      Yamada Syoji
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Osaka Institute of Technology
      Japan Advanced Institute of Science and Technology
  •  Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growthPrincipal Investigator

    • Principal Investigator
      AKABORI Masashi
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Japan Advanced Institute of Science and Technology
  •  Planar nanowire field-effect transistors using selective-area epitaxy on(110)Principal Investigator

    • Principal Investigator
      AKABORI Masashi
    • Project Period (FY)
      2010 – 2011
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Japan Advanced Institute of Science and Technology
  •  Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuits

    • Principal Investigator
      SUZUKI Toshi-kazu
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Japan Advanced Institute of Science and Technology
  •  電気化学プロセスによる半導体機能性立体ナノ材料の金属被覆とナノ工学応用Principal Investigator

    • Principal Investigator
      赤堀 誠志
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Japan Advanced Institute of Science and Technology
  •  化合物半導体歪み多層ヘテロ構造をベースとした機能性立体ナノ材料の形成と評価Principal Investigator

    • Principal Investigator
      赤堀 誠志
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Japan Advanced Institute of Science and Technology
  •  Study of spin injection and its device application in ferromagnetic/semiconductor hybrid system

    • Principal Investigator
      YAMADA Syoji
    • Project Period (FY)
      2002 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Japanese Advanced Institute of Science and Technology

All 2021 2020 2019 2018 2016 2015 2014 2013 2012 2011 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

  • [Journal Article] Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature2021

    • Author(s)
      Helman C.、Camjayi A.、Islam E.、Akabori M.、Thevenard L.、Gourdon C.、Tortarolo M.
    • Journal Title

      Physical Review B

      Volume: 103

    • DOI

      10.1103/physrevb.103.134408

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04227
  • [Journal Article] Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature2019

    • Author(s)
      Islam Md. Earul、Hayashida Kazuki、Akabori Masashi
    • Journal Title

      AIP Advances

      Volume: 9 Pages: 115215-115215

    • DOI

      10.1063/1.5126242

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04227
  • [Journal Article] High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N<sub>2</sub>gas field ion source2014

    • Author(s)
      M. Akabori, S. Hidaka, S. Yamada, T. Kozakai, O. Matsuda, and A. Yasaka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 11 Pages: 118002-118002

    • DOI

      10.7567/jjap.53.118002

    • NAID

      210000144607

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Journal Article] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2013

    • Author(s)
      M. Akabori and S. Yamada
    • Journal Title

      AIP Conf. Proc.

      Volume: 1566 Pages: 219-220

    • DOI

      10.1063/1.4848364

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Journal Article] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2013

    • Author(s)
      S. Hidaka, T. Kondo, M. Akabori and S. Yamada
    • Journal Title

      AIP Conf. Proc.

      Volume: 1566 Pages: 329-330

    • DOI

      10.1063/1.4848419

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Journal Article] High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices2012

    • Author(s)
      Shiro Hidaka, Masashi Akabori, and Syoji Yamada
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 11 Pages: 113001-113001

    • DOI

      10.1143/apex.5.113001

    • NAID

      10031126453

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Journal Article] Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors2012

    • Author(s)
      M.Akabori, T.Murakami, S.Yamada
    • Journal Title

      J.Crystal Growth

      Volume: 345 Pages: 22-26

    • DOI

      10.1016/j.jcrysgro.2012.02.009

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22760228
  • [Journal Article] Selective area molecular beam epitaxy of InAs on GaAs(110) masked substrates for direct fabrication of planar nanowire field-effect transistors2012

    • Author(s)
      M. Akabori, T. Murakami, and S. Yamada
    • Journal Title

      J. Crystal Growth

      Volume: Vol.345 Pages: 22-26

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22760228
  • [Journal Article] Epitaxial lift-off of InGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates2008

    • Author(s)
      Y. Jeong, M. Shindo, M. Akabori, and T. Suzuki
    • Journal Title

      Appl. Phys. Express 1

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Epitaxial lift-off of InGaAs/lnAIAs metamorphic high electron mobility heterostructures and their vander Waals bonding on AIN ceramic substrates2008

    • Author(s)
      Y.Jeong, M.Shindo, M.Akabori, and T.Suzuki
    • Journal Title

      Appl.Phys.Express 1

      Pages: 21201-21201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AIN ceramic substrates2008

    • Author(s)
      Y. Jeong, M. Shindo, H. Takita, M. Akabori, and T. Suzuki
    • Journal Title

      phys. stat. sol.(c) (in press)

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<o.89>Ga_<0.11>Sb/In_<0.88>Al_<0.12>Sb by magnetoresistance measurements2008

    • Author(s)
      M. Akabori, V. A. Guzenko, T. Sato, Th. Schaepers, T. Suzuki, and S. Yamada
    • Journal Title

      Phys. Rev. B 77

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Epitaxial lift-off of hiGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates2008

    • Author(s)
      Y. Jeong, M. Shindo, M. Akabori, T. Suzuki
    • Journal Title

      Appl. Phys. Express vol. vol.1(referred)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Structural,optical,and electrical characterizations of epitaxial lifted-offInGaAs/lnAIAs metamorphic heterostructures bonded on AIN ceramic substrates2008

    • Author(s)
      Y.Jeong, M.Shindo, H.Takita, M.Akabori, and T.Suzuki
    • Journal Title

      phys.stat.sol.(c)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AIN ceramic substrates2008

    • Author(s)
      Y. Jeong, M. Shindo, H. Takita, M. Akabori, T. Suzuki
    • Journal Title

      phys. stat. sol. (c) (in press)(referred)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<0.89> Ga_<0.11> Sb/In_<0.88> Al_<0.12>Sb by magnetoresistance measurements2008

    • Author(s)
      M.Akabori, V.A.Guzenko, T.Sato, Th.Schaepers, T.Suzuki, and S.Yamada
    • Journal Title

      Phys.Rev.B

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Spin-orbit interaction in high-In content InGaAs/InAlAs inverted heterojunctions for Rashba spintronics devices2007

    • Author(s)
      H.K.Choi, Y.Kitta, T.Kakegawa, Y.Jeong, M.Akabori, T.Suzuki, S.Yamada
    • Journal Title

      Proc. 28th Int. Conf. on Physics of Semiconductors

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Spin-orbit interaction in high-In content in GaAs/InAlAs inverted heterojunctions for Rashba spintronics devices2007

    • Author(s)
      H.K.Choi, Y.Kitta, T.Kakegawa, Y.Jeong, M.Akabori, T.Suzuki, S.Yamada
    • Journal Title

      Proc. 28^<th> Int Conf. on Physics of Semiconductors (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006

    • Author(s)
      V. A. Guzenko, M. Akabori, Th. Schapers, S. Cabanas, T. Sato, T. Suzuki, and S. Yamada
    • Journal Title

      phys. stet. sol.(c) 3

      Pages: 4227-4230

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006

    • Author(s)
      M,. Akabori, T. Sunouchi, T. Kakegawa, T. Sato, T. Suzuki, S. Yamada
    • Journal Title

      Physica E referred vol.34

      Pages: 413-416

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006

    • Author(s)
      V.A. Guzenko, M. Akabori, Th. Schapers, S. Cabanas, T. Sato, T. Suzuki, S. Yamada
    • Journal Title

      phys. stat sol. (c) referred vol.3

      Pages: 4227-4230

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006

    • Author(s)
      M.Akabori, T.Sunouchi, T.Kakegawa, T.Sato, T.Suzuki, S.Yamada
    • Journal Title

      Physica E 34

      Pages: 413-416

    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006

    • Author(s)
      V.A.Guzenko, M.Akabori, Th.Schapers, S.Cabanas, T.Sato, T.Suzuki, S.Yamada
    • Journal Title

      Phys. stat. sol.(c) 3

      Pages: 4227-4230

    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006

    • Author(s)
      M. Akabori, T. Sunouchi, T. Kakegawa, T. Sato, T. Suzuki, and S. Yamada
    • Journal Title

      Physica E 34

      Pages: 413-416

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005

    • Author(s)
      T.Kita, T.Kakegawa, M.Akabori, S.Yamada
    • Journal Title

      Solid State Communi., 136,

      Pages: 479-483

    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005

    • Author(s)
      T.Kita, T.Kakegawa, M.Akabori, S.Yamada
    • Journal Title

      Solid State Communi., 136

      Pages: 479-483

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005

    • Author(s)
      T.Kita, T.Kakegawa, M.Akabori, S.Yamada
    • Journal Title

      Sold State Commun. 136

      Pages: 479-483

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Side-gate control of Rashba spin-orbit interaction in InGaAs/InAlAs narrow channels2005

    • Author(s)
      S.Yamada, T.Kakegawa, M.Akabori
    • Journal Title

      Proc., I.6, 12^<th> Int Conf. on Narrow Gap Semiconductors

    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Side-Gate Control of Rashba Spin Splitting in a InGaAs/InALAs Heterojunction Narrow Channel : Toward Spin-Transistor-Based Qubits2005

    • Author(s)
      T.Kakegawa, M.Akabori, S.Yamada
    • Journal Title

      Proc. of 27^<th> Int.Conf. on Physics of Semiconductors

    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Clear Spin-Valve Signals in Conventional NiFe/InGaAs 2DEG Hybrid Two-Terminal Structures2005

    • Author(s)
      M.Akabori, K.Suzuki, S.Yamada
    • Journal Title

      Proc. of 27^<th> Int.Conf. on Physics of Semiconductors

    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Clear Spin Valve Signals in Conventional NiFe/In_<0.75>Ga_<0.25>As-2DEG Hybrid Two-Terminal Structures2004

    • Author(s)
      M.Akabori, K.Suzuki, S.Yamada
    • Journal Title

      Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B

      Pages: 1373-1374

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] High quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and InAlSb step-graded buffers2004

    • Author(s)
      T.Sato, M.Akabori, S.Yamada
    • Journal Title

      Proc. of 11^<th> Modulated Semiconductor Structures (MSS-11)

    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Side-gate control of Physics of Rashba spin splitting in a InGaAs/InAlAs heterojunction narrow channel : toward spin-transistor-based Qubits2004

    • Author(s)
      T.Kakegawa, M.Akabori, S.Yamada
    • Journal Title

      Proceedings of 27th Int. Conf. on Semiconductors, Part B

      Pages: 1297-1298

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Spin-polarized transport in Rashba quantum point contacts2004

    • Author(s)
      T.Kita, T.Kakegawa, M.Akabori, S.Yamada
    • Journal Title

      Physica E 22

      Pages: 464-467

    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Clear Spin Valve Signals in Conventional NiFe/In0.75Ga0.25As-2DEG Hybrid Two-Terminal Structures2004

    • Author(s)
      M.Akabori, K.Suzuki, S.Yamada
    • Journal Title

      Proceedings of 27th Int. Conf. on Semiconductors, Part B

      Pages: 1373-1374

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Side-gate control of Rashba spin splitting in a InGaAs/InAlAs heterojunction narrow channel : toward spin-transistor-based Qubits2004

    • Author(s)
      T.Kakegawa, M.Akabori, S.Yamada
    • Journal Title

      Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B

      Pages: 1297-1298

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076213
  • [Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In^<0.89>Ga^<0.11>Sb/In^<0.88>Sb by magnetoresistance measurements

    • Author(s)
      M. Akabori, V.A. Guzenko, T. Sato, Th. Schaepers, T.Suzuki, S. Yamada
    • Journal Title

      Phys. Rev. B referred vol.77

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560300
  • [Presentation] 分子線エピタキシーにより成長したMnAs/GaAs/InAs/GaAs(111)Bハイブリッド構造における界面周辺での格子緩和2020

    • Author(s)
      金塚渉 、赤堀誠志 、陳桐民 、大島義文
    • Organizer
      令和二年度 応用物理学会 北陸・信越支部 学術講演会
    • Data Source
      KAKENHI-PROJECT-18K04227
  • [Presentation] MATERIALS STUDY FOR SPIN FIELD EFFECT TRANSISTORS USING MOLECULAR BEAM EPITAXY2018

    • Author(s)
      Masashi Akabori, Md. Earul Islam, Dat Quoc Tran
    • Organizer
      11th Scientific Conference of University of Science, Viet Nam National University Ho Chi Minh City
    • Invited
    • Data Source
      KAKENHI-PROJECT-18K04227
  • [Presentation] InGaAs2次元電子ガス2層系における共鳴スピンホール効果測定2016

    • Author(s)
      山田省二、藤元章、添田幸伸、赤堀誠志
    • Organizer
      日本物理学会第71回年次大会
    • Place of Presentation
      東北学院大学 泉キャンパス
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] 高In組成InGaAs2次元電子ガスにおけるスピンバルブ特性の結晶方位依存性2016

    • Author(s)
      添田幸伸、日高志郎、赤堀誠志、山田省二
    • Organizer
      日本物理学会第71回年次大会
    • Place of Presentation
      東北学院大学 泉キャンパス
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] 表面反転層高In組成InGaAs2次元電子ガス2層系におけるサブバンド構造と量子ホール効果2016

    • Author(s)
      添田幸伸、赤堀誠志、藤元章、山田省二、今中康貴、竹端寛治
    • Organizer
      日本物理学会第71回年次大会
    • Place of Presentation
      東北学院大学 泉キャンパス
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] In(Ga)As系2DEG・ナノワイヤにおける伝導電子のスピン物性2015

    • Author(s)
      赤堀誠志
    • Organizer
      応用物理学会応用電子物性分科会研究例会
    • Place of Presentation
      首都大学東京秋葉原サテライトキャンパス(東京都千代田区)
    • Year and Date
      2015-06-23
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] 中心にInAlAs障壁層をもつInGaAs2次元電子ガス2層系のサブバンド輸送2015

    • Author(s)
      胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
    • Organizer
      日本物理学会第70回年次大会
    • Place of Presentation
      早稲田大学(東京都新宿区)
    • Year and Date
      2015-03-24
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] Traces of fractional quantum Hall plateaus in asymmetric two-dimensional bilayer system in wide In[0.75]Ga[0.25]As well2015

    • Author(s)
      S. Hidaka, H. Iwase, M. Akabori, S. Yamada, Y. Imanaka, K. Takehana
    • Organizer
      21st International Conference of Electronic Properties of Two-dimensional Systems
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2015-07-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] Fabrication and characterization of gated parallel wire structures having a metamorphic InGaAs/InAlAs heterojunction with high In content2015

    • Author(s)
      T. Ohori, M. Akabori, S. Hidaka, S. Yamada
    • Organizer
      21st International Conference of Electronic Properties of Two-dimensional Systems
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2015-07-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] In-Plane Transport Properties of MnAs/InAs/ GaAs(111)B Grown by Molecular Beam Epitaxy2015

    • Author(s)
      Md. E. Islam, C. T. Nguyen, M. Akabori
    • Organizer
      In-Plane Transport Properties of MnAs/InAs/ GaAs(111)B Grown by Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] Nitrogen and helium gas field ion source for nanofabrication2015

    • Author(s)
      M. E. Schmidt, K. Nagahara, O. Takechi, M. Akabori, A. Yasaka, T. Shimoda and M. Mizuta
    • Organizer
      AVS 62nd International Symposium & Exhibition 2015
    • Place of Presentation
      San Jose, California, USA
    • Year and Date
      2015-10-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] 高In組成InGaAs/InAlAs2次元電子ガス2層系共鳴スピンホール効果観測の基本検討2015

    • Author(s)
      山田省二、藤元章、赤堀誠志
    • Organizer
      日本物理学会2015年秋季大会
    • Place of Presentation
      関西大学 千里山キャンパス
    • Year and Date
      2015-09-16
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] Characterization of Spin-Orbit Coupling in Gated Wire Structures Using In0.75Ga0.25As/In0.75Al0.25As Inverted Heterojunctions2015

    • Author(s)
      T. Ohori, M. Akabori, S. Hidaka, and S. Yamada
    • Organizer
      2nd International Symposium on Frontiers in Materials Science, R3-3-3
    • Place of Presentation
      Tokyo Japan
    • Year and Date
      2015-11-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] Cyclotron resonance in InGaAs Rashba bilayer system2015

    • Author(s)
      Y. Imanaka, K. Takehana, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
    • Organizer
      21st International Conference of Electronic Properties of Two-dimensional Systems
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2015-07-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] InGaAs/InAlAs2次元電子ガス2層系における分数量子ホールプラトーの痕跡2015

    • Author(s)
      山田省二、今中康貴、竹端寛治、赤堀誠志
    • Organizer
      日本物理学会2015年秋季大会
    • Place of Presentation
      関西大学 千里山キャンパス
    • Year and Date
      2015-09-16
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] 高In組成メタモルフィックInGaAs/InAlAsヘテロ接合を用いたゲート付細線構造の評価2015

    • Author(s)
      大堀高寛、赤堀誠志、日高志郎、山田省二
    • Organizer
      日本物理学会第70回年次大会
    • Place of Presentation
      早稲田大学(東京都新宿区)
    • Year and Date
      2015-03-24
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] Subband transport in two-dimensional electron gas bilayer system in narrow In]0.75]Ga[0.25]As well with center In[0.75]Al[0.25]As barrier2015

    • Author(s)
      K. Hu, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
    • Organizer
      21st International Conference of Electronic Properties of Two-dimensional Systems
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2015-07-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] InGaAs 2次元電子ガス2層系の サブバンド輸送解析 (2)2014

    • Author(s)
      胡ガイ,張儲君,日高志郎,岩瀬比宇麻,赤堀誠志,山田省二
    • Organizer
      日本物理学会秋季大会
    • Place of Presentation
      中部大学(愛知県春日井市)
    • Year and Date
      2014-09-10
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] 領域選択分子線エピタキシーによるGaAs(211)Bマスク基板上への面内配向InAsナノワイヤの形成2013

    • Author(s)
      赤堀誠志、村上達也、山田省二
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学 (京田辺)
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] In-plane oriented InAs nanowire formation by selsctive area molecular beam epitaxy on GaAs (211)B substrates2013

    • Author(s)
      M. Akabori, T. Murakami, and S. Yamada
    • Organizer
      the 16th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Wroclaw University of Technology (Wroclaw, Poland)
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] GaAs上の領域選択分子線成長による面内配向InAsナノワイヤの試作と電気的評価2013

    • Author(s)
      赤堀誠志、村上達也、山田省二
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      富山大学 (富山)
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] GaAs(110)上の選択成長により形成したInAsナノワイヤの電子輸送特性2012

    • Author(s)
      赤堀誠志、山田省二
    • Organizer
      日本物理学会2012秋季大会
    • Place of Presentation
      横浜
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2012

    • Author(s)
      M. Akabori and S. Yamada
    • Organizer
      the 31st International Conference on the Physics of Semiconductors
    • Place of Presentation
      Zurich, Switzerland
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] 強磁性電極/高In組成InGaAs-2次元電子系接合における非局所スピン注入のゲート電圧依存性2012

    • Author(s)
      日高志郎、近藤太郎、赤堀誠志、山田省二
    • Organizer
      日本物理学会2012秋季大会
    • Place of Presentation
      横浜
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs(110) masked substrates2012

    • Author(s)
      M. Akabori, and S. Yamada
    • Organizer
      31st International Conference on Semiconductor Physics
    • Place of Presentation
      Zulich, Switzerland
    • Data Source
      KAKENHI-PROJECT-22760228
  • [Presentation] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2012

    • Author(s)
      S. Hidaka, T. Kondo, M. Akabori, and S. Yamada
    • Organizer
      the 31st International Conference on the Physics of Semiconductors
    • Place of Presentation
      Zurich, Switzerland
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] 領域選択分子線エピタキシーによるGaAs(001),(111) Bおよび(110)マスク基板上へのInAsナノワイヤ形成2011

    • Author(s)
      赤堀誠志、村上達也、山田省二
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形県山形市
    • Data Source
      KAKENHI-PROJECT-22760228
  • [Presentation] 領域選択分子線エピタキシーによるGaAs(001),(111)Bおよび(110)マスク基板上へのInAsナノワイヤ形成2011

    • Author(s)
      赤堀誠志、村上達也、山田省二
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形市・山形大学小白川キャンパス
    • Data Source
      KAKENHI-PROJECT-22760228
  • [Presentation] Selective Area Molecular Beam Epitaxy of InAs Nanowires on Various Oriented GaAs Substrates2011

    • Author(s)
      M.Akabori, T.Murakami, S.Yamada
    • Organizer
      The 15th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Tallahassee, FL, USA
    • Data Source
      KAKENHI-PROJECT-22760228
  • [Presentation] Selective Area Molecular Beam Epitaxy of InAs Nanowires on Various Oriented GaAs Substrates2011

    • Author(s)
      M. Akabori, T. Murakami, and S. Yamada
    • Organizer
      The 15th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Tallahassee, FL, US
    • Data Source
      KAKENHI-PROJECT-22760228
  • [Presentation] Top-down fabrication and electrical characterization of In0.75Ga0.25As/In0.75Al0.25As quantum nanostructures

    • Author(s)
      M. Akabori, T. Ohori, S. Hidaka, S. Yamada, and A. Yasaka
    • Organizer
      International Symposium on Nano - Materials, Technology and Applications
    • Place of Presentation
      , Hanoi, Vietnam
    • Year and Date
      2014-10-15 – 2014-10-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] 新構造InGaAs 2次元電子ガス2層系のサブバンド輸送解析

    • Author(s)
      胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
    • Organizer
      日本物理学会第69回年次大会
    • Place of Presentation
      東海大学湘南キャンパス
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] 面内配向InAsナノワイヤのウェットエッチ狭窄

    • Author(s)
      グエン・コン・タン、赤堀誠志
    • Organizer
      平成26年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      富山大学五福キャンパス(富山県富山市)
    • Year and Date
      2014-11-07 – 2014-11-08
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] Molecular beam epitaxial growth of MnAs/ InAs/GaAs(111)B heterostructure

    • Author(s)
      C. T. Nguyen, Md. E. Islam, M. Akabori
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県相模原市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] Contact properties of MnAs/InAs grown on GaAs(111)B by molecular beam epitaxy

    • Author(s)
      Md. E. Islam, C. T. Nguyen, M. Akabori
    • Organizer
      the 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2015-06-16 – 2015-06-19
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] In-plane oriented InAs nanowire field-effect transistors formed by combination of selective area molecular beam epitaxy and wet-etch thinning process

    • Author(s)
      C. T. Nguyen and M. Akabori
    • Organizer
      2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      金沢市文化ホール(石川県金沢市)
    • Year and Date
      2014-07-01 – 2014-07-03
    • Data Source
      KAKENHI-PROJECT-24560368
  • [Presentation] InGaAs2次元電子ガス2層系における量子ホール効果

    • Author(s)
      石田晋一、胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二、今中康貴、高増 正
    • Organizer
      日本物理学会第69回年次大会
    • Place of Presentation
      東海大学湘南キャンパス
    • Data Source
      KAKENHI-PROJECT-25289100
  • [Presentation] InGaAs2次元電子ガス2層系におけるサブバンド輸送と量子ホール効果

    • Author(s)
      日高志郎、岩瀬比宇麻、赤堀誠志、山田省二、今中康貴,高増 正
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-25289100
  • 1.  YAMADA Syoji (00262593)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 42 results
  • 2.  Tsuchiya Takuma (40262597)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 3.  SUZUKI Toshi-kazu (80362028)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 15 results
  • 4.  岩瀬 比宇麻 (10709132)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 8 results

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