Akabori Masashi 赤堀誠志

… Alternative Names

AKABORI Masashi 赤堀誠志

Less

Researcher Number	50345667
Other IDs
Affiliation (Current)	2025: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授
Affiliation (based on the past Project Information) *help	2018 – 2024: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授 2015: 北陸先端科学技術大学院大学, 学内共同利用施設等, 准教授 2012 – 2015: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授 2014: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジ-センター, 准教授 2010 – 2011: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教 … More 2007: Japan Advanced Institute of Science and Technology, Center for Nano Materials and Technology, Assistant Professor 2003 – 2006: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助手 2005: 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教授 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Medium-sized Section 28:Nano/micro science and related fields / Basic Section 21060:Electron device and electronic equipment-related / Electronic materials/Electric materials / Science and Engineering / Electron device/Electronic equipment
Keywords	Principal Investigator InAs / MnAs / 分子線エピタキシー / ナノワイヤ / 選択成長 / 分子線エピタキシャル成長 / 歪み多層ヘテロ構造 / 化合物半導体 / 縦型ゲートオールアラウンド / 縦型スピンバルブデバイス … More / 非局所 / 面内スピン伝播 / 界面構造 / スピンバルブ素子 / MnAs/InAs / スピン軌道結合 / スピン / FET / MBE / トランジスタ / -110 / 電界効果トランジスタ / (110) / 金属被覆膜 / 電気化学プロセス / 半導体チューブ・コイル / ナノコイル / ナノリング / 薄膜金属電極 / 電子物性 / ナノチューブ … More Except Principal Investigator スピン軌道相互作用 / スピンFET / ヘリウムイオンビーム / グラフェン電界センサ / リモートセンシング / 原子層材料 / 可降水量 / 落雷予測 / グラフェン / 電界センサ / 多値論理素子 / InGaAs量子井戸 / スピンデバイス / スピン起動相互作用 / スピンバルブ特性 / 2次元電子ガス2層系 / 極低温測定 / スピンバルブ素子(SV)素子 / スピンFET（SFET)素子 / スピン論理素子 / 2層2次元電子ガス / スピン論理デバイス / ラシュバ分裂 / 2次元ホールガス / 2次元電子ガス / GaN / InGaAs / electron device / semiconductor physics / MBE. epitaxial / crystal growth / electronic materials / MBE、エゴタキシャル / 電子デバイス・機器 / 半導体物性 / MBE、エピタキシャル / 結晶工学 / 電子・電気材料 / quantum computing device / side-gate / spin transistor / narrow-gap semiconductor / zero-field spin-splitting / inverted heteroiunction / spin-injection / spin-orbit interaction / 2重バッファ構造 / 新狭ギャップヘテロ結合 / 電子ビーム蒸着 / スピン注入電極 / 新狭ギャップヘテロ接合 / 分子線エピタキシ / ヘテロ接合 / 細線 / 逆ヘテロ接合 / 量子計算素子 / サイドゲート / スピントランジスタ / 狭ギャップ半導体 / ゼロ磁場スピン分裂 / 逆構造ヘテロ接合 / スピン注入 / 半導体ヘテロ接合 / スピンエレクトロニクス / 論理回路 / インバータ / スピンFET論理回路 / 強磁性電極 / スピンバルブ素子 Less

Development of lightning forecast technology by using high-performance graphene electric-field sensors with single-V/m-level sensitivity
- Principal Investigator
  
  水田博
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  Japan Advanced Institute of Science and Technology
MnAs/III-V/MnAs heterostructures on (111)B for vertical spin devicesPrincipal Investigator
- Principal Investigator
  
  Akabori Masashi
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Japan Advanced Institute of Science and Technology
Study of multi-value spin-logic device development using InGaAs quantum well bilayer electron systems
- Principal Investigator
  
  Yamada Shoji
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Osaka Institute of Technology
Interface structure and in-plane spin transport in MnAs/III-V-based heterostructures on (111)BPrincipal Investigator
- Principal Investigator
  
  Akabori Masashi
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Japan Advanced Institute of Science and Technology
Realization of very low power dissipation logic circuit device by using Datta-Das spin-FET
- Principal Investigator
  
  Yamada Syoji
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
  Japan Advanced Institute of Science and Technology
Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growthPrincipal Investigator
- Principal Investigator
  
  AKABORI Masashi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Planar nanowire field-effect transistors using selective-area epitaxy on(110)Principal Investigator
- Principal Investigator
  
  AKABORI Masashi
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuits
- Principal Investigator
  
  SUZUKI Toshi-kazu
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
電気化学プロセスによる半導体機能性立体ナノ材料の金属被覆とナノ工学応用Principal Investigator
- Principal Investigator
  
  赤堀誠志
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
化合物半導体歪み多層ヘテロ構造をベースとした機能性立体ナノ材料の形成と評価Principal Investigator
- Principal Investigator
  
  赤堀誠志
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Study of spin injection and its device application in ferromagnetic/semiconductor hybrid system
- Principal Investigator
  
  YAMADA Syoji
- Project Period (FY)
  2002 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Japanese Advanced Institute of Science and Technology

[Journal Article] Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy2024
- Author(s)
  Islam Md Tauhidul、Kabir Md Faysal、Akabori Masashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 1 Pages: 01SP40-01SP40
- DOI
  10.35848/1347-4065/ad01c5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04173
[Journal Article] Raman spectroscopy of doubly aligned bilayer graphene2024
- Author(s)
  Kareekunnan Afsal、Akabori Masashi、Watanabe Kenji、Taniguchi Takashi、Mizuta Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 124 Issue: 9
- DOI
  10.1063/5.0191121
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K20442, KAKENHI-PROJECT-23H00256
[Journal Article] Incremental Analysis of Magnetic Domains in Multiple Types of Ferromagnetic CoFe Nanolayer Patterns2024
- Author(s)
  Hara Shinjiro、Dai Wei、Horiguchi Ryoma、Kanetsuka Wataru、Akabori Masashi
- Journal Title
  
  physica status solidi (b)
  
  Volume: 261 Issue: 3
- DOI
  10.1002/pssb.202300529
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04173
[Journal Article] Anomalous Random Telegraph Signal in Suspended Graphene with Oxygen Adsorption: Implications for Gas Sensing2023
- Author(s)
  de Moraes Nogueira Alexandro、Kareekunnan Afsal、Akabori Masashi、Mizuta Hiroshi、Muruganathan Manoharan
- Journal Title
  
  ACS Applied Nano Materials
  
  Volume: 6 Issue: 18 Pages: 17140-17148
- DOI
  10.1021/acsanm.3c03348
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K20442, KAKENHI-PROJECT-23H00256
[Journal Article] Growth temperature dependence of MnSb synthesis on GaAs (111) B using molecular beam epitaxy2023
- Author(s)
  Kabir Md Faysal、Islam Md Tauhidul、Komatsu Soh、Akabori Masashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 1 Pages: 01SP37-01SP37
- DOI
  10.35848/1347-4065/acffd1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04173
[Journal Article] Spin-filter device using the Zeeman effect with realistic channel and structure parameters2023
- Author(s)
  Komatsu Soh、Akabori Masashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 02SP14-02SP14
- DOI
  10.35848/1347-4065/ad0596
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04173
[Journal Article] Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer Graphene Heterostructure Aligned with Near‐Zero Twist Angle2023
- Author(s)
  Shintaku Teppei、Kareekunnan Afsal、Akabori Masashi、Watanabe Kenji、Taniguchi Takashi、Mizuta Hiroshi
- Journal Title
  
  Advanced Physics Research
  
  Volume: 3 Issue: 1
- DOI
  10.1002/apxr.202300064
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23H00256
[Journal Article] Fabrication of Josephson junctions by single line etching of Nb thin films utilizing nitrogen-gas-field ion-source focused ion beam2022
- Author(s)
  Sudo Shinya、Akabori Masashi、Uno Munenori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SB Pages: SB1016-SB1016
- DOI
  10.35848/1347-4065/ac2ab4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04173
[Journal Article] Tailoring Magnetic Domains and Magnetization Switching in CoFe Nanolayer Patterns with Their Thickness and Aspect Ratio on GaAs (001) Substrate2022
- Author(s)
  Teramoto Keigo、Horiguchi Ryoma、Dai Wei、Adachi Yusuke、Akabori Masashi、Hara Shinjiro
- Journal Title
  
  physica status solidi (b)
  
  Volume: 259 Issue: 4 Pages: 2100519-2100519
- DOI
  10.1002/pssb.202100519
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04173
[Journal Article] Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature2021
- Author(s)
  Helman C.、Camjayi A.、Islam E.、Akabori M.、Thevenard L.、Gourdon C.、Tortarolo M.
- Journal Title
  
  Physical Review B
  
  Volume: 103 Issue: 13
- DOI
  10.1103/physrevb.103.134408
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04227
[Journal Article] Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature2019
- Author(s)
  Islam Md. Earul、Hayashida Kazuki、Akabori Masashi
- Journal Title
  
  AIP Advances
  
  Volume: 9 Issue: 11 Pages: 115215-115215
- DOI
  10.1063/1.5126242
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04227
[Journal Article] High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N2 gas field ion source2014
- Author(s)
  M. Akabori, S. Hidaka, S. Yamada, T. Kozakai, O. Matsuda, and A. Yasaka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 11 Pages: 118002-118002
- DOI
  10.7567/jjap.53.118002
- NAID
  210000144607
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289100
[Journal Article] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2013
- Author(s)
  S. Hidaka, T. Kondo, M. Akabori and S. Yamada
- Journal Title
  
  AIP Conf. Proc.
  
  Volume: 1566 Pages: 329-330
- DOI
  10.1063/1.4848419
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560368
[Journal Article] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2013
- Author(s)
  M. Akabori and S. Yamada
- Journal Title
  
  AIP Conf. Proc.
  
  Volume: 1566 Pages: 219-220
- DOI
  10.1063/1.4848364
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560368
[Journal Article] High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices2012
- Author(s)
  Shiro Hidaka, Masashi Akabori, and Syoji Yamada
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 11 Pages: 113001-113001
- DOI
  10.1143/apex.5.113001
- NAID
  10031126453
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560368
[Journal Article] Selective area molecular beam epitaxy of InAs on GaAs(110) masked substrates for direct fabrication of planar nanowire field-effect transistors2012
- Author(s)
  M. Akabori, T. Murakami, and S. Yamada
- Journal Title
  
  J. Crystal Growth
  
  Volume: Vol.345 Pages: 22-26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760228
[Journal Article] Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors2012
- Author(s)
  M.Akabori, T.Murakami, S.Yamada
- Journal Title
  
  J.Crystal Growth
  
  Volume: 345 Issue: 1 Pages: 22-26
- DOI
  10.1016/j.jcrysgro.2012.02.009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760228
[Journal Article] Epitaxial lift-off of InGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, M. Akabori, and T. Suzuki
- Journal Title
  
  Appl. Phys. Express 1
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Epitaxial lift-off of hiGaAs/InAlAs metamorphic high electron mobility heterostructures and their van der Waals bonding on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, M. Akabori, T. Suzuki
- Journal Title
  
  Appl. Phys. Express vol. vol.1(referred)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Structural,optical,and electrical characterizations of epitaxial lifted-offInGaAs/lnAIAs metamorphic heterostructures bonded on AIN ceramic substrates2008
- Author(s)
  Y.Jeong, M.Shindo, H.Takita, M.Akabori, and T.Suzuki
- Journal Title
  
  phys.stat.sol.(c)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, H. Takita, M. Akabori, T. Suzuki
- Journal Title
  
  phys. stat. sol. (c) (in press)(referred)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<0.89> Ga_<0.11> Sb/In_<0.88> Al_<0.12>Sb by magnetoresistance measurements2008
- Author(s)
  M.Akabori, V.A.Guzenko, T.Sato, Th.Schaepers, T.Suzuki, and S.Yamada
- Journal Title
  
  Phys.Rev.B
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Epitaxial lift-off of InGaAs/lnAIAs metamorphic high electron mobility heterostructures and their vander Waals bonding on AIN ceramic substrates2008
- Author(s)
  Y.Jeong, M.Shindo, M.Akabori, and T.Suzuki
- Journal Title
  
  Appl.Phys.Express 1
  
  Pages: 21201-21201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AIN ceramic substrates2008
- Author(s)
  Y. Jeong, M. Shindo, H. Takita, M. Akabori, and T. Suzuki
- Journal Title
  
  phys. stat. sol.(c) (in press)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<o.89>Ga_<0.11>Sb/In_<0.88>Al_<0.12>Sb by magnetoresistance measurements2008
- Author(s)
  M. Akabori, V. A. Guzenko, T. Sato, Th. Schaepers, T. Suzuki, and S. Yamada
- Journal Title
  
  Phys. Rev. B 77
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin-orbit interaction in high-In content InGaAs/InAlAs inverted heterojunctions for Rashba spintronics devices2007
- Author(s)
  H.K.Choi, Y.Kitta, T.Kakegawa, Y.Jeong, M.Akabori, T.Suzuki, S.Yamada
- Journal Title
  
  Proc. 28th Int. Conf. on Physics of Semiconductors
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-orbit interaction in high-In content in GaAs/InAlAs inverted heterojunctions for Rashba spintronics devices2007
- Author(s)
  H.K.Choi, Y.Kitta, T.Kakegawa, Y.Jeong, M.Akabori, T.Suzuki, S.Yamada
- Journal Title
  
  Proc. 28^<th> Int Conf. on Physics of Semiconductors (印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006
- Author(s)
  V. A. Guzenko, M. Akabori, Th. Schapers, S. Cabanas, T. Sato, T. Suzuki, and S. Yamada
- Journal Title
  
  phys. stet. sol.(c) 3
  
  Pages: 4227-4230
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006
- Author(s)
  M,. Akabori, T. Sunouchi, T. Kakegawa, T. Sato, T. Suzuki, S. Yamada
- Journal Title
  
  Physica E referred vol.34
  
  Pages: 413-416
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006
- Author(s)
  M. Akabori, T. Sunouchi, T. Kakegawa, T. Sato, T. Suzuki, and S. Yamada
- Journal Title
  
  Physica E 34
  
  Pages: 413-416
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006
- Author(s)
  V.A. Guzenko, M. Akabori, Th. Schapers, S. Cabanas, T. Sato, T. Suzuki, S. Yamada
- Journal Title
  
  phys. stat sol. (c) referred vol.3
  
  Pages: 4227-4230
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin splitting in InGaSb/InAlSb 2DEG having high indium content2006
- Author(s)
  M.Akabori, T.Sunouchi, T.Kakegawa, T.Sato, T.Suzuki, S.Yamada
- Journal Title
  
  Physica E 34
  
  Pages: 413-416
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure2006
- Author(s)
  V.A.Guzenko, M.Akabori, Th.Schapers, S.Cabanas, T.Sato, T.Suzuki, S.Yamada
- Journal Title
  
  Phys. stat. sol.(c) 3
  
  Pages: 4227-4230
- Data Source
  KAKENHI-PROJECT-18560300
[Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Sold State Commun. 136
  
  Pages: 479-483
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-gate control of Rashba spin-orbit interaction in InGaAs/InAlAs narrow channels2005
- Author(s)
  S.Yamada, T.Kakegawa, M.Akabori
- Journal Title
  
  Proc., I.6, 12^<th> Int Conf. on Narrow Gap Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-Gate Control of Rashba Spin Splitting in a InGaAs/InALAs Heterojunction Narrow Channel : Toward Spin-Transistor-Based Qubits2005
- Author(s)
  T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Proc. of 27^<th> Int.Conf. on Physics of Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Clear Spin-Valve Signals in Conventional NiFe/InGaAs 2DEG Hybrid Two-Terminal Structures2005
- Author(s)
  M.Akabori, K.Suzuki, S.Yamada
- Journal Title
  
  Proc. of 27^<th> Int.Conf. on Physics of Semiconductors
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Solid State Communi., 136,
  
  Pages: 479-483
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in adiabatic quantum point contact with strong Rashba spin-orbit interaction2005
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Solid State Communi., 136
  
  Pages: 479-483
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Clear Spin Valve Signals in Conventional NiFe/In0.75Ga0.25As-2DEG Hybrid Two-Terminal Structures2004
- Author(s)
  M.Akabori, K.Suzuki, S.Yamada
- Journal Title
  
  Proceedings of 27th Int. Conf. on Semiconductors, Part B
  
  Pages: 1373-1374
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-gate control of Rashba spin splitting in a InGaAs/InAlAs heterojunction narrow channel : toward spin-transistor-based Qubits2004
- Author(s)
  T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B
  
  Pages: 1297-1298
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Clear Spin Valve Signals in Conventional NiFe/In_<0.75>Ga_<0.25>As-2DEG Hybrid Two-Terminal Structures2004
- Author(s)
  M.Akabori, K.Suzuki, S.Yamada
- Journal Title
  
  Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B
  
  Pages: 1373-1374
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Side-gate control of Physics of Rashba spin splitting in a InGaAs/InAlAs heterojunction narrow channel : toward spin-transistor-based Qubits2004
- Author(s)
  T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Proceedings of 27th Int. Conf. on Semiconductors, Part B
  
  Pages: 1297-1298
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] High quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and InAlSb step-graded buffers2004
- Author(s)
  T.Sato, M.Akabori, S.Yamada
- Journal Title
  
  Proc. of 11^<th> Modulated Semiconductor Structures (MSS-11)
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-polarized transport in Rashba quantum point contacts2004
- Author(s)
  T.Kita, T.Kakegawa, M.Akabori, S.Yamada
- Journal Title
  
  Physica E 22
  
  Pages: 464-467
- Data Source
  KAKENHI-PROJECT-14076213
[Journal Article] Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In^<0.89>Ga^<0.11>Sb/In^<0.88>Sb by magnetoresistance measurements
- Author(s)
  M. Akabori, V.A. Guzenko, T. Sato, Th. Schaepers, T.Suzuki, S. Yamada
- Journal Title
  
  Phys. Rev. B referred vol.77
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560300
[Presentation] Growth and characterization of MnSb and InSb on GaAs (111)B using molecular beam epitaxy for spin-FET application2024
- Author(s)
  Md. F. Kabir, M. Akabori
- Organizer
  7th International Symposium on Frontiers in Materials Science
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Electric-field Sensor based on MoS2 for Lightning Forecast2024
- Author(s)
  Jiali Hu, Islam Mohammad Razzakul, Afsal Kareekunnan, Kuki Akihiro, Takeshi Kudo, Takeshi Maruyama, Masashi Akabori, Hiroshi Mizuta
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00256
[Presentation] Fabrication and Characterization of Vertical Spin Valve Devices Based on MnAs/InAs/MnAs/GaAs(111)B with several hundred nanometer width2024
- Author(s)
  Thuan Van Pham, Md Tauhidul Islam, Soh Komatsu, Masashi Akabori
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Molecular Beam Epitaxial Growth of MnSb, InSb and MnSb/InSb on GaAs (111) B for spin device application2024
- Author(s)
  Faysal MD KABIR, Md Tauhidul Islam, Masashi Akabori
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Growth and Structural Properties of Low-temperature grown InAs/MnAs Hybrid Structure on GaAs (111)B2023
- Author(s)
  Md Tauhidul Islam, Masashi Akabori
- Organizer
  The 70th JSAP Spring Meeting 2023
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] H2SO4/H2O2 digital wet etching of GaAs and InAs for nanostructure fabrication2023
- Author(s)
  Yingshu Ma, Masashi Akabori
- Organizer
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Magnetic Domain Analysis of CoFe/MgO Nanolayer Electrode Patterns for Spin-Injection into Semiconducting Nanowires2023
- Author(s)
  S. Hara, M. Akabori
- Organizer
  The International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS Processing, Fabrication, Properties, Applications (THERMEC 2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] GaAs/InAs コアシェルナノワイヤを用いたスピンバルブデバイスの作製・評価2023
- Author(s)
  田島正啓、赤堀誠志
- Organizer
  令和5年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Lateral and Vertical Spin Valve Devices Using Molecular Beam Epitaxial Grown MnAs/InAs Hybrid Structures2023
- Author(s)
  Md. T. Islam, T. V. Pham, Y Ma, M. Akabori
- Organizer
  The 8th International Workshop on Nanotechnology and Application
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Growth temperature dependence of MnSb synthesis on GaAs (111)B using molecular beam epitaxy2023
- Author(s)
  Md Faysal Kabir, Md Tauhidul Islam, Masashi Akabori
- Organizer
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Observation of topological valley current in non-encapsulated hBN/bilayer graphene heterostructure2023
- Author(s)
  Afsal Kareekunnan, Teppei Shintaku, Masashi Akabori, Kenji Watanabe, Takashi Taniguchi, Hiroshi Mizuta
- Organizer
  Graphene 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00256
[Presentation] Observation of Valley Hall effect in non-encapsulated bilayer graphene2023
- Author(s)
  Teppei Shintaku, Kareekunnan Afsal, Masashi Akabori, Kenji Watanabe, Takashi Taniguchi, Hiroshi Mizuta
- Organizer
  The 64th Fullerenes-Nanotubes-Graphene General Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00256
[Presentation] Fabrication and Measurement of Vertical Spin Valve Devices Based on MnAs/InAs/MnAs/GaAs(111)B2023
- Author(s)
  Van Thuan Pham, Md. Tauhidul Islam, Masashi Akabori
- Organizer
  令和5年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Design of semiconductor spin-polarizer utilizing the Zeeman effect2023
- Author(s)
  Soh Komatsu, Masashi Akabori
- Organizer
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy2023
- Author(s)
  Md Tauhidul Islam, Masashi Akabori
- Organizer
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] Molecular beam epitaxial growth of MnAs/InAs and MnSb/InSb hybrid structures for spintronic device applications2023
- Author(s)
  Md. T. Islam, Md. F. Kabir, M. Akabori
- Organizer
  The 4th International Workshop on Advanced Materials and Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] InGaAs 2次元電子ガス 2層デバイスのスピン依存伝導2022
- Author(s)
  山田省二、藤元章、赤堀誠志
- Organizer
  日本物理学会 2022年第77回年次大会
- Data Source
  KAKENHI-PROJECT-20K04631
[Presentation] Low Temperature Growth of InAs on GaAs (111)B2022
- Author(s)
  Md Tauhidul Islam, Masashi Akabori
- Organizer
  JSAP Hokuriku-Shinetsu Chapter Annual Meeting 2022
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] CoFe-InGaAs複合系におけるスピンバルブ伝導の磁場方位・ゲート電圧依存性2021
- Author(s)
  山田省二、藤元章、添田幸伸　赤堀誠志
- Organizer
  日本物理学会2021年第76回年次大会
- Data Source
  KAKENHI-PROJECT-20K04631
[Presentation] Lattice relaxation around heterointerfaces in MnAs/GaAs/InAs/GaAs(111)B grown by molecular beam epitaxy2021
- Author(s)
  W. Kanetsuka, M. Akabori, T. Chen, Y. Oshima
- Organizer
  The 8th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] InGaAs 2次元電子ガス2層系のスピンバルブ伝導2021
- Author(s)
  山田省二、藤元章、赤堀誠志
- Organizer
  日本物理学会 2021年秋季大会
- Data Source
  KAKENHI-PROJECT-20K04631
[Presentation] Fabrication of Josephson junctions by single line etching of Nb thin films utilizing nitrogen gas field ion source focused ion beam2021
- Author(s)
  S. Sudo, M. Akabori, M. Uno
- Organizer
  The 8th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04173
[Presentation] 分子線エピタキシーにより成長したMnAs/GaAs/InAs/GaAs(111)Bハイブリッド構造における界面周辺での格子緩和2020
- Author(s)
  金塚渉、赤堀誠志、陳桐民、大島義文
- Organizer
  令和二年度　応用物理学会　北陸・信越支部　学術講演会
- Data Source
  KAKENHI-PROJECT-18K04227
[Presentation] ゲート付きCoFe-InGaAsスピンバルブ素子における輸送解析2020
- Author(s)
  山田省二、藤元章、添田幸伸　赤堀誠志
- Organizer
  日本物理学会2020年秋季大会
- Data Source
  KAKENHI-PROJECT-20K04631
[Presentation] MATERIALS STUDY FOR SPIN FIELD EFFECT TRANSISTORS USING MOLECULAR BEAM EPITAXY2018
- Author(s)
  Masashi Akabori, Md. Earul Islam, Dat Quoc Tran
- Organizer
  11th Scientific Conference of University of Science, Viet Nam National University Ho Chi Minh City
- Invited
- Data Source
  KAKENHI-PROJECT-18K04227
[Presentation] 表面反転層高In組成InGaAs2次元電子ガス2層系におけるサブバンド構造と量子ホール効果2016
- Author(s)
  添田幸伸、赤堀誠志、藤元章、山田省二、今中康貴、竹端寛治
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学　泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs2次元電子ガス2層系における共鳴スピンホール効果測定2016
- Author(s)
  山田省二、藤元章、添田幸伸、赤堀誠志
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学　泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 高In組成InGaAs2次元電子ガスにおけるスピンバルブ特性の結晶方位依存性2016
- Author(s)
  添田幸伸、日高志郎、赤堀誠志、山田省二
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学　泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Fabrication and characterization of gated parallel wire structures having a metamorphic InGaAs/InAlAs heterojunction with high In content2015
- Author(s)
  T. Ohori, M. Akabori, S. Hidaka, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 高In組成メタモルフィックInGaAs/InAlAsヘテロ接合を用いたゲート付細線構造の評価2015
- Author(s)
  大堀高寛、赤堀誠志、日高志郎、山田省二
- Organizer
  日本物理学会第70回年次大会
- Place of Presentation
  早稲田大学（東京都新宿区）
- Year and Date
  2015-03-24
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] In-Plane Transport Properties of MnAs/InAs/ GaAs(111)B Grown by Molecular Beam Epitaxy2015
- Author(s)
  Md. E. Islam, C. T. Nguyen, M. Akabori
- Organizer
  In-Plane Transport Properties of MnAs/InAs/ GaAs(111)B Grown by Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Subband transport in two-dimensional electron gas bilayer system in narrow In]0.75]Ga[0.25]As well with center In[0.75]Al[0.25]As barrier2015
- Author(s)
  K. Hu, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 中心にInAlAs障壁層をもつInGaAs2次元電子ガス2層系のサブバンド輸送2015
- Author(s)
  胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
- Organizer
  日本物理学会第70回年次大会
- Place of Presentation
  早稲田大学（東京都新宿区）
- Year and Date
  2015-03-24
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Traces of fractional quantum Hall plateaus in asymmetric two-dimensional bilayer system in wide In[0.75]Ga[0.25]As well2015
- Author(s)
  S. Hidaka, H. Iwase, M. Akabori, S. Yamada, Y. Imanaka, K. Takehana
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 高In組成InGaAs/InAlAs2次元電子ガス2層系共鳴スピンホール効果観測の基本検討2015
- Author(s)
  山田省二、藤元章、赤堀誠志
- Organizer
  日本物理学会2015年秋季大会
- Place of Presentation
  関西大学　千里山キャンパス
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Characterization of Spin-Orbit Coupling in Gated Wire Structures Using In0.75Ga0.25As/In0.75Al0.25As Inverted Heterojunctions2015
- Author(s)
  T. Ohori, M. Akabori, S. Hidaka, and S. Yamada
- Organizer
  2nd International Symposium on Frontiers in Materials Science, R3-3-3
- Place of Presentation
  Tokyo Japan
- Year and Date
  2015-11-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Cyclotron resonance in InGaAs Rashba bilayer system2015
- Author(s)
  Y. Imanaka, K. Takehana, S. Hidaka, H. Iwase, M. Akabori, S. Yamada
- Organizer
  21st International Conference of Electronic Properties of Two-dimensional Systems
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs/InAlAs2次元電子ガス2層系における分数量子ホールプラトーの痕跡2015
- Author(s)
  山田省二、今中康貴、竹端寛治、赤堀誠志
- Organizer
  日本物理学会2015年秋季大会
- Place of Presentation
  関西大学　千里山キャンパス
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] In(Ga)As系2DEG・ナノワイヤにおける伝導電子のスピン物性2015
- Author(s)
  赤堀誠志
- Organizer
  応用物理学会応用電子物性分科会研究例会
- Place of Presentation
  首都大学東京秋葉原サテライトキャンパス(東京都千代田区)
- Year and Date
  2015-06-23
- Invited
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Nitrogen and helium gas field ion source for nanofabrication2015
- Author(s)
  M. E. Schmidt, K. Nagahara, O. Takechi, M. Akabori, A. Yasaka, T. Shimoda and M. Mizuta
- Organizer
  AVS 62nd International Symposium & Exhibition 2015
- Place of Presentation
  San Jose, California, USA
- Year and Date
  2015-10-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs 2次元電子ガス2層系のサブバンド輸送解析 (2)2014
- Author(s)
  胡ガイ，張儲君，日高志郎，岩瀬比宇麻，赤堀誠志，山田省二
- Organizer
  日本物理学会秋季大会
- Place of Presentation
  中部大学（愛知県春日井市）
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 領域選択分子線エピタキシーによるGaAs(211)Bマスク基板上への面内配向InAsナノワイヤの形成2013
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学 (京田辺)
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] In-plane oriented InAs nanowire formation by selsctive area molecular beam epitaxy on GaAs (211)B substrates2013
- Author(s)
  M. Akabori, T. Murakami, and S. Yamada
- Organizer
  the 16th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  Wroclaw University of Technology (Wroclaw, Poland)
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] GaAs上の領域選択分子線成長による面内配向InAsナノワイヤの試作と電気的評価2013
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  富山大学 (富山)
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] 強磁性電極/高In組成InGaAs-2次元電子系接合における非局所スピン注入のゲート電圧依存性2012
- Author(s)
  日高志郎、近藤太郎、赤堀誠志、山田省二
- Organizer
  日本物理学会2012秋季大会
- Place of Presentation
  横浜
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] GaAs(110)上の選択成長により形成したInAsナノワイヤの電子輸送特性2012
- Author(s)
  赤堀誠志、山田省二
- Organizer
  日本物理学会2012秋季大会
- Place of Presentation
  横浜
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates2012
- Author(s)
  M. Akabori and S. Yamada
- Organizer
  the 31st International Conference on the Physics of Semiconductors
- Place of Presentation
  Zurich, Switzerland
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry2012
- Author(s)
  S. Hidaka, T. Kondo, M. Akabori, and S. Yamada
- Organizer
  the 31st International Conference on the Physics of Semiconductors
- Place of Presentation
  Zurich, Switzerland
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs(110) masked substrates2012
- Author(s)
  M. Akabori, and S. Yamada
- Organizer
  31st International Conference on Semiconductor Physics
- Place of Presentation
  Zulich, Switzerland
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] Selective Area Molecular Beam Epitaxy of InAs Nanowires on Various Oriented GaAs Substrates2011
- Author(s)
  M.Akabori, T.Murakami, S.Yamada
- Organizer
  The 15th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  Tallahassee, FL, USA
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] 領域選択分子線エピタキシーによるGaAs(001),(111) Bおよび(110)マスク基板上へのInAsナノワイヤ形成2011
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形県山形市
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] 領域選択分子線エピタキシーによるGaAs(001),(111)Bおよび(110)マスク基板上へのInAsナノワイヤ形成2011
- Author(s)
  赤堀誠志、村上達也、山田省二
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形市・山形大学小白川キャンパス
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] Selective Area Molecular Beam Epitaxy of InAs Nanowires on Various Oriented GaAs Substrates2011
- Author(s)
  M. Akabori, T. Murakami, and S. Yamada
- Organizer
  The 15th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  Tallahassee, FL, US
- Data Source
  KAKENHI-PROJECT-22760228
[Presentation] InGaAs2次元電子ガス2層系における量子ホール効果
- Author(s)
  石田晋一、胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二、今中康貴、高増　正
- Organizer
  日本物理学会第69回年次大会
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] InGaAs2次元電子ガス2層系におけるサブバンド輸送と量子ホール効果
- Author(s)
  日高志郎、岩瀬比宇麻、赤堀誠志、山田省二、今中康貴，高増　正
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 面内配向InAsナノワイヤのウェットエッチ狭窄
- Author(s)
  グエン・コン・タン、赤堀誠志
- Organizer
  平成26年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山大学五福キャンパス(富山県富山市)
- Year and Date
  2014-11-07 – 2014-11-08
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] In-plane oriented InAs nanowire field-effect transistors formed by combination of selective area molecular beam epitaxy and wet-etch thinning process
- Author(s)
  C. T. Nguyen and M. Akabori
- Organizer
  2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  金沢市文化ホール(石川県金沢市)
- Year and Date
  2014-07-01 – 2014-07-03
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Contact properties of MnAs/InAs grown on GaAs(111)B by molecular beam epitaxy
- Author(s)
  Md. E. Islam, C. T. Nguyen, M. Akabori
- Organizer
  the 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Place of Presentation
  朱鷺メッセ(新潟県新潟市)
- Year and Date
  2015-06-16 – 2015-06-19
- Data Source
  KAKENHI-PROJECT-24560368
[Presentation] Top-down fabrication and electrical characterization of In0.75Ga0.25As/In0.75Al0.25As quantum nanostructures
- Author(s)
  M. Akabori, T. Ohori, S. Hidaka, S. Yamada, and A. Yasaka
- Organizer
  International Symposium on Nano - Materials, Technology and Applications
- Place of Presentation
  , Hanoi, Vietnam
- Year and Date
  2014-10-15 – 2014-10-17
- Invited
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] 新構造InGaAs 2次元電子ガス2層系のサブバンド輸送解析
- Author(s)
  胡ガイ、張儲君、日高志郎、岩瀬比宇麻、赤堀誠志、山田省二
- Organizer
  日本物理学会第69回年次大会
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-25289100
[Presentation] Molecular beam epitaxial growth of MnAs/ InAs/GaAs(111)B heterostructure
- Author(s)
  C. T. Nguyen, Md. E. Islam, M. Akabori
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス(神奈川県相模原市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24560368

1. YAMADA Syoji (00262593)

# of Collaborated Projects: 4 results

# of Collaborated Products: 46 results
2. Tsuchiya Takuma (40262597)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. SUZUKI Toshi-kazu (80362028)

# of Collaborated Projects: 1 results

# of Collaborated Products: 15 results
4. 岩瀬比宇麻 (10709132)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
5. 水田博 (90372458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
6. 郷右近英臣 (10757777)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. KAREEKUNNAN Afsal (90910779)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results

Akabori Masashi 赤堀 誠志

AKABORI Masashi 赤堀 誠志

Research Projects

Research Products

Co-Researchers

Development of lightning forecast technology by using high-performance graphene electric-field sensors with single-V/m-level sensitivity

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

MnAs/III-V/MnAs heterostructures on (111)B for vertical spin devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study of multi-value spin-logic device development using InGaAs quantum well bilayer electron systems

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Interface structure and in-plane spin transport in MnAs/III-V-based heterostructures on (111)BPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Realization of very low power dissipation logic circuit device by using Datta-Das spin-FET

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growthPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Planar nanowire field-effect transistors using selective-area epitaxy on(110)Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuits

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

電気化学プロセスによる半導体機能性立体ナノ材料の金属被覆とナノ工学応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

化合物半導体歪み多層ヘテロ構造をベースとした機能性立体ナノ材料の形成と評価Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of spin injection and its device application in ferromagnetic/semiconductor hybrid system

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Raman spectroscopy of doubly aligned bilayer graphene2024

Author(s)

Journal Title

DOI

Akabori Masashi 赤堀誠志

AKABORI Masashi 赤堀誠志